Reaction apparatus, semiconductor coating apparatus, and coating method thereof

Abstract

This application discloses a reaction apparatus, a semiconductor coating apparatus, and a coating method thereof. The reaction apparatus comprises a reaction chamber, a first cover plate, an intake assembly, and a baffle plate. The reaction chamber has a reaction cavity for holding reactants and comprises a first end and a second end set opposite each other. The first cover plate is positioned to cover the first end. The intake assembly is positioned on the first cover plate and communicates with the reaction cavity. The baffle plate is positioned between the first cover plate and the reaction cavity. The orientation of the first cover plate and the baffle plate is perpendicular to the vertical axis of the reactants. The side wall surface of the baffle plate facing the first cover plate is raised, and the side wall surface of the first cover plate facing the baffle plate is recessed. This configuration makes the diffusion of the reaction source more uniform during the process of flowing into the reaction chamber, the distribution of the reaction source in the reactants more uniform, and as a result, the uniformity of the film thickness between the reactants is improved.

Description

Technical Field

[0001] <Cross - reference to related cases> This application claims priority from a Chinese patent application with application number 2023106891920, invention title "Reactor, semiconductor coating apparatus and coating method thereof", filed on June 12, 2023, and the entire content of this Chinese patent application is incorporated herein by reference.

[0002] This application belongs to the field of semiconductor technology, and specifically relates to a reactor, a semiconductor coating apparatus and a coating method thereof.

Background Art

[0003] In an existing epitaxial process chamber, a reactive gas is introduced into a semiconductor process chamber and chemically reacted by means such as heating. However, the diffusion of the process gas on the reactant is usually not uniform, deteriorating the uniformity of the film thickness on the reactant and affecting the reaction result.

Summary of the Invention

[0004] This application provides a reactor, a semiconductor coating apparatus and a coating method thereof, to solve the technical problem that the diffusion of the process gas on the reactant is non - uniform.

[0005] To solve the above technical problems, the technical solution adopted in this application provides a reaction apparatus comprising a reaction chamber, a first cover plate, an intake assembly, and a baffle plate, wherein a reaction cavity for supporting reactants is formed inside the reaction chamber, the reaction chamber comprises a first end and a second end arranged opposite to each other, the first cover plate covers the first end, the intake assembly is positioned on the first cover plate, the intake assembly is connected to the reaction cavity, and the baffle plate is positioned between the first cover plate and the reaction chamber, wherein the orientation of the first cover plate and the baffle plate is parallel to the vertical axis of the reactants, the wall surface of the baffle plate facing the first cover plate is raised, and the wall surface of the first cover plate facing the baffle plate is recessed.

[0006] Here, the side of the rectifier plate facing the first cover plate is an arcuate surface, and in the first direction, the distance between the rectifier plate and the first cover plate gradually increases from the center toward both ends.

[0007] Here, the side of the first cover plate facing the flow equalizer is an arcuate surface, and in the second direction, the distance between the first cover plate and the flow equalizer gradually decreases from the center toward both ends, and the second direction intersects the first direction.

[0008] Here, the central angle of the arc surface is greater than 0° and less than or equal to 15°.

[0009] Here, the first cover plate is provided with at least two air inlets spaced apart, the intake assembly includes an air inlet end cover and an intake pipe, correspondingly provided with at least two air inlet end covers, the air inlet end covers are provided on the air inlets, and at least two sets of the intake pipes are provided, each set of the intake pipes includes a connecting pipe and a ventilation pipe, where the connecting pipe is in communication with each of the air inlet end covers and the ventilation pipe is in communication with the connecting pipe.

[0010] Here, the first cover plate is provided with two air inlets, the two air inlets are spaced apart from each other, and correspondingly, two air inlet end covers are provided, and two sets of intake pipes are provided, each set of intake pipes includes one connecting pipe and one ventilation pipe, the connecting pipe is connected to the two air inlet end covers, and the ventilation pipe is connected to the central part of the connecting pipe.

[0011] In this configuration, where the two air inlets are spaced apart, each of the two air inlets is positioned at 1 / 3 of the way down the first cover plate.

[0012] Here, the intake assembly further comprises a guide block, the guide block being positioned on the side of the air inlet end cover facing the air inlet, and the connecting end of the connecting pipe connected to the air inlet end cover being positioned at a distance from the outer circumference of the guide block.

[0013] Here, the reaction apparatus further comprises a partition plate, which is positioned between the rectifier plate and the first cover plate, and a plurality of air inlet holes are arranged in an array on the partition plate.

[0014] Here, a sub-partition plate is provided at a position corresponding to the air inlet of the partition plate, and a plurality of guide holes are arranged in an array on the sub-partition plate.

[0015] Here, the reaction apparatus further includes the exhaust assembly, which is disposed within the reaction chamber, and the exhaust assembly includes a second cover plate and an exhaust pipe, the second cover plate covering the second end of the reaction chamber, the second cover plate having an exhaust port, the exhaust pipe being disposed within the second cover plate, and the exhaust pipe communicating with the exhaust port.

[0016] Here, the reaction chamber has a first side and a second side arranged opposite to each other at the second end, and a third side and a fourth side arranged opposite to each other, and the second cover plate includes two semicircular plates and an arc plate, the two semicircular plates arranged on the first side and the second side respectively, the two semicircular plates are installed inclined toward each other, the arc plate is connected to the third side and the fourth side and is connected to the outer edges of the two semicircular plates, the exhaust port is located on the arc plate, and the arc plate and the two semicircular plates surround and form an exhaust chamber whose inner diameter gradually decreases.

[0017] Here, the reaction apparatus is equipped with a temperature sensor, which is located at the top of the reaction chamber and used to measure the temperature of the reaction chamber.

[0018] Herein, the reaction apparatus further includes a sub-gas pipe and an annular groove, the sub-gas pipe being positioned on the side wall of the rectifier plate and used to connect an inert gas to the outside, and the annular groove being positioned on the outer circumference of the first end of the reaction chamber and being in communication with the sub-gas pipe and used to form an airtight seal.

[0019] Here, the reaction apparatus further comprises fixing studs, the fixing studs being arranged on both sides of the reaction chamber, and the height of the fixing studs being at least half the height of the reaction chamber.

[0020] To solve the above technical problems, another technical solution adopted in this application provides a semiconductor coating apparatus, the semiconductor coating apparatus including any of the above reaction apparatuses.

[0021] To solve the above technical problems, another technical solution adopted in this application provides a coating method, the coating method employing either the reactor or the semiconductor coating apparatus, the coating method comprising placing reactants in a reaction chamber, introducing a reaction source through an intake assembly, and the reaction source passing sequentially through a first cover plate and a rectifier plate into the reaction chamber.

[0022] The above technical solution involves installing a first cover plate, an intake assembly, and a baffle plate in the reaction chamber, with the baffle plate's wall facing the first cover plate raised, and the first cover plate's wall facing the baffle plate recessed. This structure allows the reaction source to enter the reaction chamber and diffuse more uniformly during the reaction process, resulting in a more uniform distribution of the reaction source on the reactants and improved uniformity of film thickness between reactants. Furthermore, by providing an independent reaction chamber, the problem of matching gas flow resistance between reactants can be effectively solved, further improving film thickness uniformity. [Brief explanation of the drawing]

[0023] To more clearly illustrate the technical solutions in the embodiments of this application, the following is a brief introduction to the drawings necessary for describing the embodiments. Clearly, the drawings described below are only a part of the embodiments of this application. Those skilled in the art can obtain other drawings based on these without any creative work. [Figure 1] This is a schematic diagram of the overall structure of an embodiment of the reaction apparatus of this application. [Figure 2] This is a schematic diagram of the exploded structure of an embodiment of the reactor in this application. [Figure 3] This is a schematic cross-sectional diagram of a rectifier plate facing the first cover plate in one embodiment of the reaction apparatus of this application. [Figure 4] A schematic diagram of the cross-sectional structure of the first cover plate facing the rectifier plate in an embodiment of the reactor of this application. [Figure 5]FIG. 5 is a schematic structural diagram of an intake assembly disposed on a first cover plate in an embodiment of the reaction apparatus of the present application. [Figure 6] It is another overall structural diagram of the reaction apparatus according to the embodiment of the present application. [Figure 7] FIG. 6 is a schematic flowchart of an embodiment of the coating method of the present application.

Embodiments for Carrying out the Invention

[0024] Hereinafter, the technical solution of the present application will be described completely and clearly with reference to the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of them. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0025] In addition, in the embodiments of the present application, if there are descriptions such as "first", "second", etc., the descriptions of "first", "second", etc. are for illustrative purposes only, and should not be construed as suggesting or implying their relative importance, or implicitly specifying the number of the indicated technical features. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of those features. Also, the technical solutions of each embodiment can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or cannot be implemented, such a combination of technical solutions does not exist and should be considered outside the protection scope claimed in the present application.

[0026] To better understand the present application, the heating circuit and the heating circuit provided by the present application will be described in more detail below with reference to the accompanying drawings and specific embodiments.

[0027] Referring to Figures 1 and 2, Figure 1 is a schematic diagram showing the overall structure of one embodiment of the reactor of the present application, and Figure 2 is a schematic diagram showing the exploded structure of one embodiment of the reactor of the present application.

[0028] In one embodiment of this application, a reaction apparatus 10 is provided. The reaction apparatus 10 comprises a reaction chamber 11, a first cover plate 12, an intake assembly 13, and a flow straightener plate 14. The reaction chamber 11 has a reaction cavity 111, which is used to support the reactants. The reaction chamber 11 comprises a first end 112 and a second end 113, which are arranged opposite each other. The first end 112 is covered by the first cover plate 12. An intake assembly 13 is disposed on the first cover plate 12, and the intake assembly 13 is in communication with the reaction cavity 111. The flow straightener plate 14 is disposed between the first cover plate 12 and the reaction chamber 11. Furthermore, the arrangement direction of the first cover plate 12 and the rectifier plate 14 is perpendicular to the vertical axis of the reactants, the wall surface of the rectifier plate 14 facing the first cover plate 12 is raised, and the wall surface of the rectifier plate 14 facing the first cover plate 12 is recessed.

[0029] As can be seen from the above structure, the reaction chamber 11 can provide an independent reaction cavity 111 for the reactants. Because the volume and air density of the reaction cavity 111 are well matched, the problem of matching gas flow resistance between the reactants can be better solved. In this case, the gas flow resistance between the reactants is well matched, and after the reaction source reacts in the reaction cavity 111, the film thickness between the reactants becomes more uniform. At the same time, because the orientation of the first cover plate 12 and the rectifier plate 14 is perpendicular to the vertical axis of the reactants, and the concentration of the reaction source is high at the location of the intake assembly 13, by raising the wall surface of the rectifier plate 14 facing the first cover plate 12 and recessing the wall surface of the first cover plate 12 facing the rectifier plate 14, the diffusion path of the reaction source is lengthened closer to the intake assembly 13, and the overall concentration of the reaction source in the reaction cavity 111 can be appropriately adjusted. As a result, the diffusion of the reaction source becomes more uniform as it diffuses into the reaction cavity 111, and the concentration distribution of the reaction source within the reaction cavity 111 becomes more uniform. Consequently, during the process in which the reactants react within the reaction cavity 111, the contact between the reactants and the reaction source becomes more uniform, improving the uniformity of the film thickness of the reactants.

[0030] Furthermore, the wall surface of the rectifier plate 14 facing the first cover plate 12 may be installed with a raised surface. In this case, the reaction source enters sequentially from the intake assembly 13 to the first cover plate 12 and then to the rectifier plate 14, and after entering the rectifier plate 14, it can diffuse outward, thus allowing for more uniform diffusion during the process of entering the reaction cavity 111. Of course, the wall surface of the rectifier plate 14 facing the first cover plate 12 may also be installed with a recessed surface. In this case, the reaction source can diffuse outward as it passes from the intake assembly 13 to the first cover plate 12, thereby allowing for more uniform diffusion when the reaction source enters the reaction cavity 111. Of course, the wall surface of the rectifier plate 14 facing the first cover plate 12 may be installed with a raised surface, while the wall surface of the first cover plate 12 facing the rectifier plate 14 may be installed with a recessed surface. In this case, as the reaction source enters sequentially from the intake assembly 13 to the first cover plate 12 and the rectifier plate 14, the reaction source can diffuse into the surroundings as it passes through the first cover plate 12 and the rectifier plate 14, respectively. This results in a more uniform distribution of the reaction source throughout the reaction cavity 111, and consequently, a more uniform concentration distribution of the reaction source within the reaction cavity 111. There are no particular restrictions here.

[0031] In some embodiments, spaced grids are provided at the first end 112 of the reaction chamber 11. The reaction source passes through the intake assembly 13, then through the first cover plate 12 and the rectifier plate 14, before entering the reaction cavity 111 from the first end 112. Therefore, by providing spaced grids at the first end 112 of the reaction chamber 11, the reaction source can flow more uniformly into the reaction cavity 111 and diffuse more uniformly within the reaction cavity 111. The more uniform the diffusion of the reaction source within the reaction cavity 111, the more uniform the concentration distribution of the reaction source within the reaction cavity 111 becomes. In this case, contact between the reactants and the reaction source becomes more uniform, and the uniformity of the film thickness between the reactants can be improved.

[0032] As shown in Figures 3 and 4, Figure 3 is a schematic diagram of the cross-sectional structure of the rectifier plate facing the first cover plate in one embodiment of the reactor of this application. Figure 4 is a schematic diagram of the cross-sectional structure of the first cover plate facing the rectifier plate in one embodiment of the reactor of this application.

[0033] In the embodiments of this application, the side of the rectifier plate 14 facing the first cover plate 12 is an arcuate surface, and in the first direction 200, the distance between the rectifier plate 14 and the first cover plate 12 gradually increases from the center toward both ends. In this case, the wall surface of the rectifier plate 14 facing the first cover plate 12 is raised, and the reaction source enters the first cover plate 12 and the rectifier plate 14 sequentially via the intake assembly 13, and as it passes through the rectifier plate 14, it can diffuse uniformly to both sides along the first direction 200. The distance between the reaction source and the reaction chamber 11 within the reaction cavity 111 is kept constant between positions close to and far from the intake assembly 13. This ensures that the reaction source diffuses more uniformly within the reaction cavity 111 along the first direction 200, resulting in a more uniform concentration distribution of the reaction source within the reaction cavity 111, more uniform contact between the reactants and the reaction source, and improved uniformity of film thickness between the reactants.

[0034] Furthermore, the side of the first cover plate 12 facing the rectifier plate 14 is an arcuate surface, and in the second direction 300, the distance between the first cover plate 12 and the rectifier plate 14 gradually decreases from the center to both ends, and the second direction 300 intersects with the first direction 200. In this case, the wall surface of the first cover plate 12 facing the rectifier plate 14 is recessed, and the reaction source enters the first cover plate 12 through the intake assembly 13 and then diffuses uniformly to both sides along the second direction 300, and the distance between the reaction source and the reaction chamber 11 in the reaction cavity 111 is kept consistent at positions close to and far from the intake assembly 13. This ensures that the reaction source diffuses more uniformly within the reaction cavity 111 along the second direction 300. In this case, the concentration distribution of the reaction source in the reaction cavity 111 becomes more uniform, the contact between the reactants and the reaction source becomes more uniform, and the uniformity of the film thickness between the reactants is improved.

[0035] The first direction 200 and the second direction 300 may be orthogonal to each other. Here, in the normal operating state of the reactor 10, the first direction 200 is horizontal and the second direction 300 is vertical. In other embodiments, the first direction 200 may be vertical and the second direction 300 may be horizontal, but this is not limited. Of course, the first direction 200 may intersect with the second direction 300, but they must not be orthogonal. In this case, as the reaction source enters the first cover plate 12 and the rectifier plate 14 through the intake assembly 13, the reaction source can diffuse outward along the first direction 200 and the second direction 300, thereby making the concentration distribution of the reaction source in the reaction cavity 111 more uniform. At this time, the contact between the reactants and the reaction source becomes more uniform, and the uniformity of the film thickness between the reactants is improved, which will not be repeated here.

[0036] Furthermore, the central angle of the arcuate surface is greater than 0° and 15° or less. If the central angle of the arcuate surface is too large, the distance the reaction source near the intake assembly 13 travels to enter the reaction cavity 111 becomes too long. As a result, after entering the reaction cavity 111, the concentration of the reaction source near the intake assembly 13 is lower than the concentration of the reaction source at other locations, affecting the overall concentration of the reaction source in the reaction cavity 111, and further affecting the uniformity of the film thickness of the reactant. If the central angle of the arcuate surface is 0°, the arcuate surface is a plane and cannot play an auxiliary role in the diffusion of the reaction source, nor does it have the effect of making the diffusion of the reaction source more uniform. Therefore, if the central angle of the arcuate surface is greater than 0° and 15° or less, the diffusion of the reaction source becomes more uniform during the process in which the reaction source diffuses into the reaction cavity 111 and reacts, the concentration distribution of the reaction source in the reaction cavity 111 becomes more uniform, and the uniformity of the film thickness of the reactant in the reaction cavity 111 can be better ensured.

[0037] The degree of the central angle may be 2°, 5°, or 13°; it is not limited to these values.

[0038] As shown in Figures 2 and 5, Figure 5 is a schematic diagram of the structure of an intake assembly installed on the first cover plate of one embodiment of the reactor of this application.

[0039] In some embodiments, at least two air inlet sections 121 are spaced apart on the first cover plate 12. The intake assembly 13 includes an air inlet end cover 131 and an intake pipe 132. Here, at least two corresponding air inlet end covers 131 are provided, and the air inlet end covers 131 are provided covering the air inlet sections 121. At least two sets of intake pipes 132 are provided, and each set of intake pipes 132 includes a connecting pipe 1321 and a ventilation pipe 1322. Here, the connecting pipe 1321 communicates with each air inlet end cover 131, and the ventilation pipe 1322 communicates with the connecting pipe 1321. By providing the air inlet end covers 131 and intake pipes 132, the reaction source can enter the connecting pipe 1321 via the ventilation pipe 1322, thereby entering the air inlet end cover 131, and also enter the air inlet section 121 via the air inlet end cover 131.

[0040] A pair of intake pipes 132 is used to guide one reaction source into the reaction cavity 111. Specifically, one reaction source enters the connecting pipe 1321 through a corresponding pair of ventilation pipes 1322. Since the connecting pipe 1321 is connected to each air inlet end cover 131, the reaction source diffuses through the connecting pipe 1321 and enters each air inlet 121, and from the air inlet 121 enters the reaction cavity 111 where the reaction takes place. When the reaction source enters the connecting pipe 1321 through the ventilation pipe 1322, the reaction source is divided into two, three, or four at the connection point with the connecting pipe 1321, depending on the number of air inlets 121 connected to the connecting pipe 1321.

[0041] The number of air inlet sections 121 may be two, four, or five, but is not limited to these. Similarly, the number of intake pipes 132 may be two, four, or five, depending on the number of reaction sources, but is not limited to these.

[0042] In the embodiments of this application, the first cover plate 12 is provided with two air inlet portions 121, which are spaced apart and correspondingly provided with two air inlet end covers 131. Two sets of intake pipes 132 are provided, each set of intake pipes 132 including one connecting pipe 1321 and one ventilation pipe 1322. The connecting pipe 1321 communicates with the two air inlet end covers 131, and the ventilation pipe 1322 communicates with the central part of the connecting pipe 1321. In this case, the reaction source is divided into two at the central part of the connecting pipe 1321, flows from the connecting pipe 1321 to the two air inlet end covers 131 respectively, flows from the two air inlet end covers 131 to the air inlet portions 121, and then enters the reaction cavity 111. As a result, the reaction source can be evenly distributed and flow into the two air inlets 121, and after passing through the air inlets 121 and entering the reaction cavity 111, the reaction source diffuses more uniformly, the concentration distribution of the reaction source in the reaction cavity 111 becomes more uniform, and as a result the contact between the reactants and the reaction source becomes more uniform, improving the uniformity of the film thickness between the reactants.

[0043] Specifically, when the first cover plate 12 is provided with two air inlets 121, the two air inlets 121 can be positioned at 1 / 3 of the way across the first cover plate 12 in the direction in which the two air inlets 121 are spaced apart. In this case, the air inlets 121 are evenly distributed across the first cover plate 12, and the reaction source can flow more evenly into the reaction cavity 111 through the air inlets 121. Therefore, after the reaction occurs in the reaction cavity 111, the film thickness between the reactants becomes more uniform.

[0044] Continuing to refer to Figures 2 and 3, the intake assembly 13 further includes a guide block 133. The guide block 133 is positioned on the side of the air inlet end cover 131 facing the air inlet 121. A connecting pipe 1321 is connected to the connecting end of the air inlet end cover 131 and is spaced around the guide block 133. The installation of the guide block 133 provides, on the one hand, a buffering effect when the reaction source enters the air inlet 121, preventing the reaction source from flowing too quickly and causing an uneven distribution that would affect the overall reaction concentration in the reaction cavity 111. On the other hand, the installation of the guide block 133 can also play a certain auxiliary role in the diffusion of the reaction source, making the concentration of the reaction source more uniform as it diffuses through the air inlet 121 into the reaction cavity 111. Thus, the installation of the guide block 133 can further improve the uniformity of the film thickness of the reactants.

[0045] The guide block 133 may be provided in a conical, cylindrical, or other shape, and is not limited thereto.

[0046] Referring again to Figures 2 to 4, in the embodiment of this application, the reaction apparatus 10 also includes a partition plate 15. The partition plate 15 is positioned between the rectifier plate 14 and the first cover plate 12, and a plurality of air inlet holes 151 are arranged in an array on the partition plate 15. Specifically, the reaction source enters the first cover plate 12 from the air inlet 121, then flows into the rectifier plate 14 through the plurality of air inlet holes 151 of the partition plate 15, passes through the rectifier plate 14, and enters the reaction cavity 111. Therefore, the installation of the partition plate 15 can, on the one hand, provide a certain diffusion effect to the reaction source, and on the other hand, because a plurality of air inlet holes 151 are arranged in an array on the partition plate 15, the reaction source can be diffused more uniformly as it passes through the partition plate 15.

[0047] In this embodiment, a sub-partition plate 152 is provided at the location of the partition plate 15 corresponding to the air inlet 121 in order to guide the reaction source at the air inlet 121. Multiple guide holes (not shown) are arranged in an array on the sub-partition plate 152. Specifically, in the process of the reaction source flowing from the air inlet 121 into the reaction cavity 111, the reaction source is buffered by the guide block 133 and then flows from the outlet end of the guide block 133 to the inlet end of the sub-partition plate 152. The installation of the sub-partition plate 152 allows the reaction source buffered by the guide block 133 to diffuse uniformly again, ensuring uniformity of the reaction source concentration throughout the reaction cavity 111. The multiple guide holes on the sub-partition plate 152 effectively assist the diffusion of the reaction source, making the diffusion of the reaction source more uniform in the process of diffusion into the reaction cavity 111, and resulting in a more uniform concentration distribution of the reaction source within the reaction cavity 111. This results in more uniform contact between the reactants and the reaction source, improving the uniformity of the film thickness between the reactants.

[0048] Referring to Figure 6, which is a schematic diagram showing another overall structure of a reaction apparatus according to one embodiment of this application, the reaction apparatus 10 further comprises an exhaust assembly 16. The exhaust assembly 16 is located in the reaction chamber 11 and comprises a second cover plate (not shown) and an exhaust pipe 163. Here, the second cover plate is located at the second end 113 of the reaction chamber 11 and has an exhaust port (not shown). The exhaust pipe 163 is located on the second cover plate and communicates with the exhaust port. In this case, the reaction gas in the reaction cavity 111 is sequentially discharged through the exhaust port and the exhaust pipe 163. At this time, the reaction gas does not remain in the reaction cavity 111 and does not affect the film thickness between the reactants in the reaction cavity 111.

[0049] To improve the efficiency of exhausting the reaction gas in the reaction cavity 111, in the embodiments of this application, the reaction chamber 11 has a first side surface 1131 and a second side surface 1132 positioned opposite the second end 113, and a third side surface 1133 and a fourth side surface 1134 positioned opposite each other. The second cover plate includes two semicircular plates 164 and one arc plate 165, where the two semicircular plates 164 are positioned on the first side surface 1131 and the second side surface 1132 respectively and are installed at an angle to each other. The arc plate 165 is connected to the third side surface 1133 and the fourth side surface 1134 and is connected to the outer edges of the two semicircular plates 164. The arc plate 165 is provided with exhaust ports. The arc plate 165 and the two semicircular plates 164 surround each other to form an exhaust chamber (not shown) with a gradually decreasing inner diameter. Specifically, when exhausting the reaction gas from the reaction cavity 111, the arc plate 165 and the two semicircular plates 164 can guide the gas exhaust to some extent. The gas exhausted from the reaction cavity 111 to the exhaust assembly 16 converges from the periphery towards the center and is discharged along the exhaust pipe 163. This prevents the gas from the outer periphery from moving too far away from the exhaust pipe 163, thus reducing exhaust efficiency. On the other hand, the overall efficiency of the exhaust process is greatly improved, and exhaust time can be saved. On the other hand, exhaust of the exhaust chamber can be achieved without blind spots in both the horizontal and vertical directions, thereby enabling exhaust from any corner of the reaction cavity 111 and achieving uniformity of the exhaust rate between reactants.

[0050] In other embodiments, the exhaust assembly 16 may be a different structure in which the inner diameter gradually decreases as it moves away from the second end 113. A gradual decrease in inner diameter causes the inner wall of the exhaust assembly 16 to be inclined, providing a constant guide for the gas within the exhaust assembly 16 and facilitating the exhaust of the exhaust chamber without blind spots in both the lateral and longitudinal directions.

[0051] Continuing to refer to Figure 2, in another embodiment, a temperature sensor 17 is further installed in the reaction apparatus 10. The temperature sensor 17 is installed at the top of the reaction chamber 11 and is used to measure the temperature inside the reaction cavity 111, thereby assisting the manufacturer in better controlling the temperature inside the reaction cavity 111. Specifically, if the temperature inside the reaction cavity 111 is insufficient, the manufacturer can directly know the specific temperature value inside the reaction cavity 111 via the temperature sensor 17 and adjust it appropriately, thereby adjusting the temperature inside the reaction cavity 111 to the optimal temperature suitable for the reaction of the reaction source. Naturally, if the temperature inside the reaction cavity 111 is high, the manufacturer can similarly adjust the temperature inside the reaction cavity 111 appropriately based on the temperature value transmitted from the temperature sensor 17, thereby adjusting the temperature inside the reaction cavity 111 to the optimal temperature. At this time, since the temperature inside the reaction cavity 111 is the optimal temperature for the reaction of the reaction source, the film thickness between the reactants inside the reaction cavity 111 can be made more uniform.

[0052] In the embodiments of this application, the reaction apparatus 10 further comprises a support base 18. The support base 18 is mounted at the bottom of the reaction chamber 11 so as to be movable up and down. The support base 18 is used to position the reactants. By installing the support base 18, the reactants can be stably positioned in the reaction cavity 111, reducing the gas flow resistance in the reaction cavity 111 and resulting in a more uniform film thickness between the reactants. The shape of the support base 18 may be circular. If the shape of the support base 18 is circular, there are usually no bends or corners, so the gas flow resistance is further reduced and the film thickness between the reactants becomes more uniform. Of course, the shape of the support base 18 may be non-circular, but details are omitted here.

[0053] Furthermore, the reaction apparatus 10 further includes a sub-gas pipe 19 and an annular groove 191. The sub-gas pipe 19 is installed on the side wall of the rectifier plate 14 and is used to connect to an external inert gas. The annular groove 191 is installed on the outer circumference of the first end 112 of the reaction chamber 11, and the annular groove 191 communicates with the sub-gas pipe 19 and is used to form an airtight seal. Because the rectifier plate 14 and the first end 112 of the reaction chamber 11 are bonded to each other, there is a small gap between the rectifier plate 14 and the first end 112 of the reaction chamber 11. During the process in which the reactants flow into the reaction cavity 111 through the air inlet 121, a sub-gas pipe 19 is installed and connected to an external inert gas. After the sub-gas pipe 19 and the annular groove 191 are connected, the inert gas forms an airtight seal within the annular groove 191, effectively preventing the reaction source from leaking out through gaps, ensuring the concentration of the reaction source, reducing gas flow resistance within the reaction cavity 111, and improving the uniformity of the film thickness between the reactants.

[0054] Furthermore, the reaction apparatus also includes fixing studs 110. The fixing studs 110 are positioned on both sides of the reaction chamber 11. The height of the fixing studs 110 is more than half the height of the reaction chamber 11. The fixing studs 110 serve to fix the reaction chamber 11, making the overall structure more stable during the process in which the reaction sources react within the reaction cavity 111.

[0055] One embodiment of this application also provides a semiconductor coating apparatus. This semiconductor coating apparatus comprises the reaction apparatus 10 described above.

[0056] Referring to Figure 7, Figure 7 is a schematic flowchart showing one embodiment of the coating method of the present application. One embodiment of the present application provides a coating method. The coating method uses the reaction apparatus 10 or semiconductor coating apparatus described in the above embodiment. Here, the coating method includes step (S1), placing the reactants in the reaction chamber 11, and step (S2), introducing a reaction source through the intake assembly 13 and allowing the reaction source to flow into the reaction chamber 11 by passing sequentially through the first cover plate 12 and the rectifier plate 14.

[0057] During the entire coating process, the reaction source can diffuse uniformly within the reaction chamber 11, resulting in a more uniform concentration distribution of the reaction source within the reaction chamber 11 and ensuring uniformity of the film thickness of the reactant.

[0058] The above description is merely an embodiment of the present application and does not limit the scope of the patent. Equivalent structural or procedural transformations, or direct or indirect applications in other related technical fields, made using the contents of the specification and drawings of this application are also included within the scope of the patent protection of this application. [Explanation of symbols]

[0059] 10 Reactor 11 Reaction Chamber 12. First cover plate 13 Intake Assembly 14 Current plate 15 partition plates 16 Exhaust Assembly 17 Temperature sensor 18 Support stand 19 Sub-gas pipe 110 Fixed Stud 111 Reaction Cavity 112 First end 113 Second end 121 Air inlet 131 Air inlet end cover 132 Intake pipe 133 Guide Block 151 Air inlet hole 152 Sub-partition plate 163 Exhaust pipe 164 Semicircular Plate 165 Arc Plate 191 Ring groove 200 1st direction 300 2nd direction 1131 1st side 1132 Second side 1133 Third aspect 1134 Fourth aspect 1321 Connecting pipe 1322 Ventilation pipe

Claims

1. A reaction apparatus comprising a reaction chamber, a first cover plate, an intake assembly, and a rectifier plate, The reaction chamber has a reaction cavity for supporting the reactants and includes a first end and a second end arranged opposite to each other. The first end is covered by the first cover plate. The intake assembly is positioned on the first cover plate and communicates with the reaction cavity, The rectifier plate is positioned between the first cover plate and the reaction chamber. Herein, the arrangement direction of the first cover plate and the rectifier plate is perpendicular to the vertical axis of the reactants, and the rectifier plate is installed as a protrusion on the side wall surface of the rectifier plate facing the first cover plate and recessed on the side wall surface of the first cover plate facing the rectifier plate, in a reaction apparatus.

2. The reaction apparatus according to claim 1, characterized in that the side of the rectifier plate facing the first cover plate is an arcuate surface, and in the first direction, the distance between the rectifier plate and the first cover plate gradually increases from the center to both ends.

3. The reaction apparatus according to claim 2, wherein the side of the first cover plate facing the rectifier plate is an arcuate surface, and in the second direction, the distance between the first cover plate and the rectifier plate gradually decreases from the center to both ends, and the second direction intersects the first direction.

4. The reaction apparatus according to claim 2 or 3, characterized in that the central angle of the arcuate surface is greater than 0° and 15° or less.

5. The first cover plate has at least two air inlets spaced apart, and the intake assembly includes an air inlet end cover and an intake pipe. Correspondingly, at least two of the air inlet end covers are provided, and the air inlet end covers are provided to cover the air inlet portion. The reaction apparatus according to claim 1, wherein at least two sets of intake pipes are provided, and each set of intake pipes includes a connecting pipe and a ventilation pipe, wherein the connecting pipe is connected to each of the air inlet end covers, and the ventilation pipe is in communication with the connecting pipe.

6. The reaction apparatus according to claim 5, characterized in that the first cover plate is provided with two air inlet portions, the two air inlet portions are spaced apart, and correspondingly two air inlet end covers are provided, two sets of intake pipes are provided, each set of intake pipes includes one connecting pipe and one ventilation pipe, the connecting pipe is in communication with the two air inlet end covers, and the ventilation pipe is in communication with the central portion of the connecting pipe.

7. The reaction apparatus according to claim 5, characterized in that, in a direction in which the two air inlets are installed with a gap between them, the two air inlets are each positioned at a 1 / 3 position of the first cover plate.

8. The reaction apparatus according to claim 5, wherein the intake assembly further includes a guide block, the guide block is positioned on the side of the air inlet end cover facing the air inlet, and the connecting end of the connecting pipe connected to the air inlet end cover is positioned at a distance from the outer circumference of the guide block.

9. The reaction apparatus according to claim 8, further comprising a partition plate, the partition plate being positioned between the rectifier plate and the first cover plate, and the partition plate having a plurality of air inlet holes arranged in an array.

10. The reaction apparatus according to claim 9, wherein a sub-partition plate is provided at the location of the partition plate corresponding to the air inlet, and a plurality of guide holes are arranged in an array on the sub-partition plate.

11. The reaction apparatus further includes an exhaust assembly, which is located in the reaction chamber, and the exhaust assembly includes a second cover plate and an exhaust pipe. The second cover plate is provided to cover the second end of the reaction chamber, and the second cover plate is provided with an exhaust port. The reaction apparatus according to claim 1, characterized in that the exhaust pipe is provided on the second cover plate and the exhaust pipe is in communication with the exhaust port.

12. The reaction chamber has a first side and a second side positioned opposite each other at the second end, and a third side and a fourth side positioned opposite each other; the second cover plate includes two semicircular plates and an arc plate; The two semicircular plates are positioned on the first and second sides, respectively, and the two semicircular plates are installed at an angle toward each other. The reaction apparatus according to claim 11, characterized in that the arc plate is connected to the third and fourth sides and further connected to the outer edges of the two semicircular plates, the exhaust port is provided in the arc plate, and the arc plate and the two semicircular plates surround each other to form an exhaust chamber whose inner diameter gradually decreases.

13. The reaction apparatus according to claim 1, wherein the reaction apparatus includes a temperature sensor, the temperature sensor is located at the top of the reaction chamber and is used to measure the temperature of the reaction cavity.

14. The reaction apparatus further includes a sub-gas pipe and an annular groove, The aforementioned sub-gas pipe is installed on the side wall of the rectifier plate and is used to connect to an external inert gas. The reaction apparatus according to claim 1, characterized in that the annular groove is provided on the outer circumference of the first end of the reaction chamber, and the annular groove is in communication with the sub-gas pipe to form an airtight seal.

15. The reaction apparatus according to claim 1, further comprising fixing studs, wherein the fixing studs are arranged on both sides of the reaction chamber, and the height of the fixing studs is at least half the height of the reaction chamber.

16. A semiconductor coating apparatus characterized by comprising a reaction apparatus according to any one of claims 1 to 15.

17. The coating method uses the reaction apparatus described in any one of claims 1 to 15 or the semiconductor coating apparatus described in claim 16. The aforementioned coating method is The steps include placing the reactants in the reaction chamber, The steps include introducing a reaction source from the intake assembly, and allowing the reaction source to flow into the reaction chamber by passing it sequentially through the first cover plate and the rectifier plate, A coating method characterized by including the following.

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