Systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing.

Abstract

This disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system applicable to processing a substrate and semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, and one or more sidewalls, windows, and a lid define an internal space at least partially. The system includes one or more heat sources configured to heat the internal space, a substrate support disposed within the internal space, and a first optical sensor configured to detect energy having a first wavelength of less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength shorter than the first wavelength.

Description

Technical Field

[0001]

[0001] This disclosure relates to a system, apparatus, and method for monitoring plate temperature for semiconductor manufacturing.

Background Art

[0002]

[0002] Semiconductor substrates are processed for various applications, including the manufacture of integrated and micro devices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, the temperature of the substrate and the temperature of the processing chamber components can affect the deposition uniformity.

[0003]

[0003] It can be difficult to adjust parameters (such as gas flow path, gas flow rate, gas pressure, etc.) for deposition uniformity. Rotating the substrate can make the adjustment even more difficult. The adjustment difficulty may increase when the rotation speed is relatively low, the pressure is high, and the flow rate is low. Further, it can be difficult to clean the components of the processing chamber.

[0004]

[0004] Efforts to address such difficulties can involve the difficulty of monitoring the temperature of the substrate and / or chamber components. The efforts can also involve the difficulty of monitoring the coating of the chamber components.

[0005]

[0005] Therefore, there is a need for improved processing chambers and related components that facilitate the adjustment of process parameters and the monitoring of temperature and coating conditions.

Summary of the Invention

[0006]

[0006] This disclosure relates to a system, apparatus, and method for monitoring plate temperature for semiconductor manufacturing.

[0007]

[0007] In one or more embodiments, a system applicable to processing substrates and semiconductor manufacturing includes a chamber body including one or more side walls. The system includes a lid and a window, and one or more side walls, windows, and a lid define an internal space at least partially. The system includes one or more heat sources configured to heat the internal space, a substrate support disposed within the internal space, and a first optical sensor configured to detect energy having a first wavelength of less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength shorter than the first wavelength.

[0008]

[0008] In one or more embodiments, a system applicable to processing substrates and semiconductor manufacturing includes a chamber body including one or more side walls. The system includes a lid and a window, the one or more side walls, the window, and the lid at least partially define an internal space, and the window includes a first quartz. The system includes one or more heat sources configured to heat the internal space, a substrate support disposed within the internal space, and a plate disposed between the substrate support and the window within the internal space. The plate includes a second quartz, the second quartz having a second hydroxyl concentration greater than 750 ppm.

[0009]

[0009] In one or more embodiments, a system applicable to processing substrates and semiconductor manufacturing includes a chamber body including one or more side walls. The system includes a lid and a window, and one or more side walls, a window, and a lid define an internal space at least partially. The system includes one or more heat sources configured to heat the internal space, a substrate support disposed within the internal space, and a plate disposed within the internal space between the substrate support and the window. The system includes a controller which, when executed, causes a plurality of operations to be performed, the plurality of operations including heating a substrate at least partially supported by the substrate support and flowing one or more process gases over the substrate to form one or more layers on the substrate. The plurality of operations include monitoring a first temperature of the substrate or substrate support using a first optical sensor and monitoring a second temperature of the plate using a second optical sensor.

[0010]

[0010] To allow for a more detailed understanding of the above-mentioned features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and are not intended to limit the scope of the Disclosure, and other equally effective embodiments are also permitted. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. [Figure 2] This is a schematic enlarged view of the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 3] A simplified schematic partial cross-sectional view of a portion of the processing chamber shown in Figure 1, according to one or more embodiments, is shown. [Figure 4] This is a schematic graph of a temperature measurement profile according to one or more embodiments. [Figure 5] This is a schematic partial diagram of a system including the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 6] This is a schematic enlarged cross-sectional view of the sensor device shown in Figure 5, according to one or more embodiments. [Figure 7A] Figure 5 shows schematic plan views of the optical paths within the sensor device for the respective reflective portions of the first and second beams, according to one or more embodiments. In one or more embodiments, the sensor device includes an energy-collecting lens 701 (such as a collimating lens). [Figure 7B] Figure 5 shows schematic plan views of the optical paths within the sensor device for the reflective portions of the first beam, second beam, and third beam, according to one or more embodiments. [Figure 8] These are schematic side views of the beam splitter shown in Figures 6 and 7, according to one or more embodiments. [Figure 9A] This is a schematic graph of the transmittance profile according to one or more embodiments. [Figure 9B] This is a schematic graph of the transmittance profile according to one or more embodiments. [Figure 10] This is a schematic block diagram of a substrate processing method according to one or more embodiments. [Figure 11] This is a schematic block diagram of a chamber cleaning method according to one or more embodiments. [Modes for carrying out the invention]

[0012]

[0024] For ease of understanding, the same reference numerals are used whenever possible to indicate identical elements common to the figures. Elements and features of one embodiment are intended to be usefully incorporated into other embodiments without further detail.

[0013]

[0025] This disclosure relates to a system, apparatus, and method for monitoring plate temperature for semiconductor manufacturing.

[0014]

[0026] In this disclosure, terms such as “couples,” “coupling,” “couple,” and “coupled” include, but are not limited to, welding, fusion, melting, interlocking, and / or fastening using bolts, screw connections, pins, and / or screws. In this disclosure, terms such as “couples,” “coupling,” “couple,” and “coupled” include, but are not limited to, forming as a single unit. In this disclosure, terms such as “couples,” “coupling,” “couple,” and “coupled” include, but are not limited to, direct bonding and / or indirect bonding (such as indirect bonding via components such as links, blocks, and / or frames).

[0015]

[0027] Figure 1 is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. An epitaxial film is grown on a substrate 102 using the processing chamber 100. The processing chamber 100 generates a crossflow of precursor across the upper surface 150 of the substrate 102. Figure 1 shows the processing chamber 100 in a processing state.

[0016]

[0028] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Inside the chamber body, a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143 are disposed. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. In the present disclosure, it is contemplated that other heat sources can be used (in addition to or instead of the lamps) for the various heat sources described herein. For example, a resistance heater, a light emitting diode (LED), and / or a laser can be used for the various heat sources described herein.

[0017]

[0029] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports a substrate 102. In one or more embodiments, the substrate support 106 includes a susceptor. In the present disclosure, other substrate supports (for example, including a substrate carrier and / or one or more ring segments that support one or more outer regions of the substrate 102) are also contemplated. The plurality of upper heat sources 141 are disposed between the upper window and the lid 154. The plurality of upper heat sources 141 form part of an upper heat source module 155. The lid 154 includes a plurality of sensor devices 196, 197, 198 disposed therein or on its surface and configured to measure the temperature inside the processing chamber 100. A lower sensor device 195 is configured to measure the temperature inside the processing chamber 100. In one or more embodiments, each sensor device 195, 196, 197, 198 is a pyrometer. In one or more embodiments, each sensor device 195, 196, 197, 198 is an optical sensor device such as a pyrometer. In the present disclosure, it is contemplated that sensors other than pyrometers can be used. Each sensor device 195, 196, 197, 198 is a single wavelength sensor device or a multi-wavelength (such as two wavelengths) sensor device. The lower sensor device 195 is disposed adjacent to the floor 152.

[0018]

[0030] In one or more embodiments, process chamber 100 includes any one, any two, or any three of the four sensor devices 195, 196, 197, 198 shown.

[0019]

[0031] In one or more embodiments, process chamber 100 includes one or more additional sensor devices in addition to sensor devices 195, 196, 197, 198. In one or more embodiments, process chamber 100 may include sensor devices arranged at different positions and / or in different orientations from the illustrated sensor devices 195, 196, 197, 198.

[0020]

[0032] A plurality of lower heat sources 143 are arranged between lower window 110 and floor 152. The plurality of lower heat sources 143 form part of lower heat source module 145. Upper window 108 is an upper dome and / or is formed of an energy transmissive material such as quartz. Lower window 110 is a lower dome and / or is formed of an energy transmissive material such as quartz.

[0021]

[0033] An upper space 136 and a purge space 138 are formed between upper window 108 and lower window 110. Upper space 136 and purge space 138 are part of an internal space at least partially defined by upper window 108, lower window 110, and one or more liners 111, 163.

[0022]

[0034] A substrate support 106 is positioned within the internal space. The substrate support 106 includes an upper surface on which a substrate 102 is positioned. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the upper space 136.

[0023]

[0035] The substrate support 106 may be provided with lift pin holes 107. Each lift pin hole 107 is sized to accommodate a lift pin 132 for lifting the substrate 102 from the substrate support 106 before or after the deposition process. When the substrate support 106 is lowered from the processing position to the transfer position, the lift pins 132 may be placed on a lift pin stop 134. The lift pin stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0024]

[0036] The flow module 112 comprises one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas exhaust ports 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust ports 116. A preheating ring 117 is located below the one or more gas inlets 114 and the one or more gas exhaust ports 116. The preheating ring 117 is located above the one or more purge gas inlets 164. One or more liners 111, 163 are located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and purge gas inlets 164 are each arranged parallel to the upper surface 150 of the substrate 102 located in the upper space 136 to allow one or more process gases P1 and one or more purge gases P2 to flow, respectively. The gas inlet 114 is fluidically connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet 164 is fluidically connected to one or more purge gas sources 162. One or more gas exhaust ports 116 are fluidically connected to an exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases P2 supplied using one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0025]

[0037] One or more gas exhaust ports 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects one or more gas exhaust ports 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers onto the substrate 102. The exhaust system 178 is located on the opposite side of the processing chamber 100 from the flow module 112.

[0026]

[0038] The processing chamber 100 includes a plate 171 having a first surface 172 and a second surface 173 facing the first surface 172. In one or more embodiments, the plate 171 is part of a flow guide structure. The second surface 173 faces a substrate support 106. The processing chamber 100 includes one or more liners 111, 163. The upper liner 163 includes an annular portion 181 and one or more shelf portions 182 extending inward relative to the annular portion 181. One or more shelf portions 182 are configured to support one or more outer regions of the second surface 173 of the plate 171. The upper liner 163 includes one or more inlet openings 183 and one or more outlet openings 185. In one or more embodiments, the plate 171 is disk-shaped and the annular portion 181 is ring-shaped. The plate 171 may also be rectangular in shape. The plate 171 divides the upper space 136 between the substrate support 106 and the upper window 108 into a lower section 136a and an upper section 136b. The lower section 136a is a processing section. In one or more embodiments, the plate 171 is a separation plate that fluidly separates the upper section 136b from the lower section 136a.

[0027]

[0039] The flow module 112 (which may be at least a part of the side wall of the processing chamber 100) includes one or more gas inlets 114 that are in fluid communication with the lower part 136a. The flow module 112 includes one or more second gas inlets 175 that are in fluid communication with the upper part 136b. One or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. One or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of the upper liner 163.

[0028]

[0040] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow into the lower section 136a through one or more gas inlets 114 and one or more gaps, and then flow over the substrate 102. During the deposition operation, one or more purge gases P2 flow into the upper section 136b through one or more second gas inlets 175 and one or more inlet openings 183 of the lower liner 111. The one or more purge gases P2 flow simultaneously with the flow of the one or more process gases P1. The flow of the one or more purge gases P2 through the upper section 136b makes it easier to reduce or prevent the one or more process gases P1 from flowing into the upper section 136b and contaminating it. The one or more process gases P1 are exhausted through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust ports 116. One or more purge gases P2 are exhausted through one or more outlet openings 185, through the same gap between the upper liner 163 and the lower liner 111, and through one or more gas exhaust ports 116, the same as one or more process gases P1. The disclosure also envisions that one or more purge gases P2 may be exhausted separately through one or more second gas exhaust ports separate from the one or more gas exhaust ports 116.

[0029]

[0041] This disclosure also assumes that one or more purge gases P2 can be supplied to the purge space 138 (through one or more purge gas inlets 164) during the loading operation and that the purge space 138 can be exhausted.

[0030]

[0042] During the cleaning operation, one or more cleaning gases flow into the lower section 136a through one or more gas inlets 114 and one or more gaps (between the upper liner 163 and the lower liner 111). During the cleaning operation, one or more cleaning gases also simultaneously flow into the upper section 136b through one or more second gas inlets 175 and one or more inlet openings 183 of the upper liner 163. This disclosure assumes that one or more cleaning gases used to clean surfaces adjacent to the upper section 136b may be the same as or different from the one or more cleaning gases used to clean surfaces adjacent to the lower section 136a.

[0031]

[0043] The processing chamber 100 facilitates the separation of the gas supplied to the lower part 136a from the gas supplied to the upper part 136b, thereby facilitating parameter adjustment. In addition, to facilitate the reduction of contamination of the upper window 108 and / or plate 171, one or more purge gases and one or more cleaning gases can be supplied separately to the upper part 136b.

[0032]

[0044] As shown in the figure, the controller 190 communicates with the processing chamber 100 and is used to control processes and methods, such as the operation of the methods described herein.

[0033]

[0045] The controller 190 is configured to receive data or input as sensor readings from multiple sensors. The sensors may include, for example, sensors to monitor the growth of layers on the substrate 102, sensors to monitor growth or residue on the inner surfaces of chamber components of the processing chamber 100 (such as the inner surfaces of plate 171 and / or one or more liners 111, 163), and / or sensors to monitor the temperature of the substrate 102, substrate support 106, plate 171, and / or liners 111, 163. The controller 190 is equipped with or communicates with a system model of the processing chamber 100. The system model includes a heating model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (such as gas flow rate, gas pressure, processing temperature, rotational position of components, heating profile, coating state, and / or cleaning state) throughout the deposition and / or cleaning operations. The controller 190 is further configured to store readings and calculated values. The readings and calculated values ​​include previous sensor readings, such as previous sensor readings within the processing chamber 100. The readings and calculated values ​​further include values ​​calculated and stored after the sensor readings are measured by the controller 190 and executed through the system model. Therefore, the controller 190 is configured not only to retrieve the stored readings and calculated values, but also to store them for future use. By maintaining previous readings and calculated values, the controller 190 can adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0034]

[0046] The controller 190 can monitor and estimate optimized parameters, detect the coating status of plate 171, generate warnings on the display, stop the deposition operation, initiate a chamber downtime period, delay subsequent iterations of the deposition operation, start a cleaning operation, detect the cleaning status of plate 171, stop the cleaning operation, adjust the heating force, and / or adjust other process recipes.

[0035]

[0047] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 for storing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various items directly or via other computers or controllers. In one or more embodiments, the controller 190 is communicably coupled to a dedicated controller, and the controller 190 functions as a central controller.

[0036]

[0048] The controller 190 is a general-purpose computer processor of any form used in industrial environments to control various board processing chambers and devices, as well as subprocessors on or within them. The memory 191, i.e., non-temporary computer-readable media, is one or more readily available memories such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disks, hard disks, flash drives, or other forms of local or remote digital storage. The support circuit 192 of the controller 190 is coupled to the CPU 193 to support the CPU 193. The support circuit 192 includes cache, power supply, clock circuit, input / output circuit and subsystems, etc. Operating parameters (e.g., coating state, process gas P1 pressure, processing temperature, heating profile, process gas P1 flow rate, cleaning gas pressure, cleaning gas flow rate, and / or rotational position of substrate support 106) and operations are stored in memory 191 as software routines that are executed or called to transform the controller 190 into a purpose-specific controller for controlling the operations of the various chambers / modules described herein. The controller 190 is configured to perform any of the operations described herein. When instructions stored in memory are executed, one or more operations of method 1000 and / or method 1100 (described later) are performed with respect to the processing chamber 100. The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.

[0037]

[0049] The various operations described herein (such as the operations of Method 1000 and / or Method 1100) can be performed automatically using the controller 190, or automatically or manually by a user performing specific operations.

[0038]

[0050] In one or more embodiments, the controller 190 includes a mass storage device, an input control device, and a display device. The controller 190 monitors the temperature of the substrate 102, the temperature of the substrate support 106, the temperature of the plate 171, the process gas flow, and / or the purge gas flow. In one or more embodiments, the controller 190 includes multiple controllers 190, and the stored readings and calculated values ​​and the system model are stored in a controller separate from the controller 190 that controls the operation of the processing chamber 100. In one or more embodiments, the system model and all stored readings and calculated values ​​are stored within the controller 190.

[0039]

[0051] The controller 190 is configured to control the sensor devices 195, 196, 197, 198, the deposition, washing, rotational position, heating, and the gas flow through the processing chamber 100 by providing outputs to the control devices of the heat source, gas flow, and motion assembly 121. The control devices include the sensor devices 195, 196, 197, 198, the upper heat source 141, the lower heat source 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0040]

[0052] The controller 190 is configured to adjust the output to the control unit based on sensor readings, a system model, and stored readings and calculated values. The controller 190 includes built-in software and correction algorithms for calibrating the measurements. The controller 190 may include one or more machine learning algorithms and / or artificial intelligence algorithms to estimate optimized parameters for the deposition and / or cleaning operations (such as adjusting the deposition operation (process recipe, etc.), stopping the deposition operation, starting a chamber downtime period, delaying subsequent iterations of the deposition operation, starting the cleaning operation, stopping the cleaning operation, adjusting the heating force, and / or adjusting the cleaning operation). The optimized parameters may include, for example, a predetermined coating thickness on plate 171, which triggers a cleaning operation to remove the coating from plate 171.

[0041]

[0053] One or more machine learning algorithms and / or artificial intelligence algorithms can implement, adjust, and / or improve upon one or more of the algorithms, inputs, outputs, or variables described above. Additionally or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms can rank or prioritize certain aspects of the adjustments to process chamber 100, method 1000, and / or method 1100 compared to other aspects of process chamber 100, method 1000, and / or method 1100. One or more machine learning algorithms and / or artificial intelligence algorithms can take into account other changes in the processing system, such as hardware replacement or degradation. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms take into account upstream or downstream changes that may occur in the processing system as a result of changes in the variables of process chamber 100, method 1000, and / or method 1100. For example, if variable "A" is adjusted to change process aspect "B", and such adjustment unintentionally changes process aspect "C", one or more machine learning algorithms and / or artificial intelligence algorithms can take into account such change in aspect "C". In such embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to the implementation of process chamber 100, method 1000, and / or method 1100. By utilizing these predictive aspects, unintended changes within the processing system can be mitigated in advance.

[0042]

[0054] One or more machine learning algorithms and / or artificial intelligence algorithms can estimate optimized parameters, for example, using regression models (such as linear regression models) or clustering techniques. The algorithms can be unsupervised or supervised. One or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, the heating force, washing recipe, and / or processing recipe applied to heat sources 141, 143. One or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, a predetermined thickness and / or a second predetermined thickness as described herein, the time to start the washing operation, and / or the time to start the deposition operation.

[0043]

[0055] In one or more embodiments, the controller 190 automatically performs the operations described herein without using one or more machine learning or artificial intelligence algorithms. In one or more embodiments, the controller 190 compares measured values ​​(such as increases and / or decreases in readings) with data in a lookup table and / or library to determine whether a coating state and / or cleaning state has been detected. The controller 190 can store the measured values ​​as data in the lookup table and / or library.

[0044]

[0056] Figure 2 is a schematic enlarged view of the processing chamber 100 shown in Figure 1, according to one or more embodiments. The substrate support 106 has an upper surface 161 (e.g., a support surface) and a lower surface 169.

[0045]

[0057] Figure 2 also shows multiple temperature measurement sites 249-Q, 249-S, 253-Q, 253-R, 253-S, 255-Q, 255-S, 256-Q, 256-R, and 256-S. For example, in one or more embodiments, the lower sensor device 195 (shown in Figure 1) is configured to measure the temperature of site 249-Q (e.g., the middle peripheral region of the lower window 110) and / or site 249-S (e.g., the middle peripheral region of the lower surface 169 of the substrate support 106). In one or more embodiments, the first upper sensor device 196 (shown in Figure 1) is configured to measure the temperature of site 255-Q (e.g., the central region of the plate 171) and / or site 255-S (e.g., the central region of the substrate 102 and / or the central region of the upper surface 161 of the substrate support 106). In one or more embodiments, a second upper sensor device 197 (shown in Figure 1) is configured to measure the temperature of part 253-Q (e.g., the outer peripheral region of the upper window 108), part 253-R (e.g., the outer peripheral region of the plate 171), and / or part 253-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). In one or more embodiments, a third upper sensor device 198 (shown in Figure 1) is configured to measure the temperature of part 256-Q (e.g., the outer peripheral region of the upper window 108), part 256-R (e.g., the outer peripheral region of the plate 171), and / or part 256-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). The sensor devices 195, 196, 197, and 198 may be located in positions and / or orientations different from those shown in Figures 1 and 2, while still being able to measure the temperature of a portion on the plate 171, a portion on one or more windows (e.g., upper window 108 and / or lower window 110), and / or on one of the surfaces of the substrate support 106 (e.g., upper surface 161 and / or lower surface 169) and / or on the substrate 102. Each sensor device 195, 196, 197, and 198 may be adapted to detect energy (e.g., radiation such as light) in two or more (e.g., three or more) different wavelength ranges.For example, in one or more embodiments, two or three wavelength ranges of the upper sensor devices 196, 197, 198 are selected to be (1) a wavelength range absorbed by the plate 171 (e.g., about 2.48 microns to about 2.98 microns), (2) a wavelength range absorbed by the substrate support 106 and / or the substrate 102 (e.g., about 3.17 microns to about 3.67 microns), and (3) a wavelength range absorbed by the upper window 108 and / or the lower window 110 (e.g., about 4.75 microns to about 5.25 microns, e.g., about 5.0 microns). As another example, in one or more embodiments, the two wavelength ranges of the lower sensor device 195 are selected such that (1) the wavelength range absorbed by the upper window 108 and / or the lower window 110 (e.g., about 4.75 microns to about 5.25 microns, e.g., about 5.0 microns), and (2) the wavelength range absorbed by the substrate support 106 and / or the substrate 102 (e.g., about 3.17 microns to about 3.67 microns).

[0046]

[0058] Figure 3 shows a simplified schematic partial cross-sectional view of a portion of the processing chamber 100 shown in Figure 1, according to one or more embodiments. As shown, temperature measurements in each of the portions 249-Q, 249-S, 253-Q, 253-R, 253-S, 255-Q, 255-S, 256-Q, 256-R, and 256-S can be performed using one or more radiation beams. In one or more embodiments, each of the sensor devices 195, 196, 197, and 198 is configured to emit one or more radiation beams and receive one or more reflected radiation beams. In Figure 3, a radiation beam 302 may be emitted from the first upper sensor device 196. At the first surface 172 of the plate 171, a portion of the radiation beam 302 may be reflected as radiation beam 306. Another portion of the radiation beam 302 may be transmitted as radiation beam 304. It should be noted that the reflective and transmitted portions may have different wavelengths depending on the material and temperature of the plate 171. For example, the reflected radiation beam 306 may have wavelengths in the range of approximately 2.48 microns to approximately 2.98 microns. The first upper sensor device 196 is configured to receive the reflected radiation beam 306 and measure its intensity. For example, the first upper sensor device 196 may be configured to receive and measure radiation in a wavelength range of at least approximately 2.48 microns to approximately 2.98 microns. At the upper surface 161 of the substrate support 106, a portion of the radiation beam 304 may be reflected as radiation beam 308. Furthermore, a portion of the radiation beam 308 may again pass through the upper window 108 and become radiation beam 309. It should be noted that the reflective portion (e.g., radiation beam 308) and the reflected and transmitted portion (e.g., radiation beam 309) may have specific wavelengths, respectively, depending on the material and temperature of the substrate support 106 and the plate 171. For example, the radiation beam 309 may have a wavelength in the range of approximately 3.17 microns to approximately 3.67 microns. The first upper sensor device 196 is configured to receive the transmitted and reflected radiation beam 309 and measure the intensity of the radiation beam 309. For example, the first upper sensor device 196 may be configured to receive and measure radiation in the wavelength range of at least approximately 3.17 microns to approximately 3.67 microns.

[0047]

[0059] In one or more embodiments, one or more of the sensor devices 195, 196, 197, and 198 can simultaneously measure more than two (e.g., three or more) different wavelengths (or wavelength ranges). For example, one or more of the sensor devices 195, 196, 197, and 198 can simultaneously measure radiation in the ranges of approximately 3.17 microns to approximately 3.67 microns, approximately 2.48 microns to approximately 2.98 microns, and approximately 4.75 microns to approximately 5.25 microns.

[0048]

[0060] Temperature measurements performed by each sensor device 195, 196, 197, and 198 are used to monitor the temperature inside the process chamber 100. Furthermore, temperature measurements can be used to evaluate the operating state of the process chamber 100 (e.g., coating state and / or cleaning state). For example, the difference in temperature measurements can be used to detect reactant coatings on plate 171, upper window 108, and / or lower window 110. Such coating detection can be obtained without opening the process chamber 100 for process and / or cleaning optimization. For example, Figure 4 shows an example of a temperature change that may be measured to detect the coating state.

[0049]

[0061] Figure 4 is a schematic graph of temperature measurement profiles 451 to 456 according to one or more embodiments.

[0050]

[0062] Line 451 is an exemplary temperature measurement profile of the substrate support 106 when the plate 171 is transparent (e.g., before coating with the reactive gas). Line 452 is an exemplary temperature measurement profile of the substrate support 106 while the plate 171 is being coated with the reactive gas. Line 453 is an exemplary temperature measurement profile of the substrate support 106 after the plate 171 has been coated. A first change in the temperature reading 454 (e.g., a decrease in the reading) may indicate that the plate 171 is in the process of being coated with the reactive gas. A second change in the temperature reading 455 (e.g., a decrease in the reading) may indicate that the plate 171 has been coated with the reactive gas, for example, to a predetermined thickness.

[0051]

[0063] Line 461 is an exemplary temperature measurement profile of plate 171 when it is transparent (e.g., before coating with the reactive gas, and the pyrometer signal indicates high energy transmission to the substrate). Line 462 is an exemplary temperature measurement profile of plate 171 while it is being coated with the reactive gas. Line 463 is an exemplary temperature measurement profile of plate 171 after it has been coated (e.g., the pyrometer signal indicates low energy transmission to the substrate). A first change in the temperature reading 464 (e.g., a decrease in the reading) may indicate that plate 171 is in the process of being coated with the reactive gas. A second change in the temperature reading 465 (e.g., an increase in the reading) may indicate that plate 171 has been coated with the reactive gas, for example, to a predetermined thickness.

[0052]

[0064] In one or more embodiments, the controller 190 can receive temperature measurements from any of the sensor devices 195, 196, 197, and 198. The controller 190 can store one or more temperature measurements and compare the stored values ​​with one or more subsequent iterations of temperature measurements. The controller 190 can compare any one temperature measurement with one or more other temperature measurements. Based on the temperature measurements and / or comparisons thereof, the controller 190 can evaluate the operating state of the process chamber 100. For example, the operating state may be the coating state of the plate 171 (e.g., that the plate 171 is coated to a predetermined thickness). The coating state may, for example, impede heating efficiency, process gas flow, and / or process gas reactivity. If a coating state is detected, the controller 190 may generate a warning on the display, stop the deposition operation, initiate a chamber downtime period, delay subsequent iterations of the deposition operation, start a cleaning operation to remove the coating from the plate 171, and / or stop the cleaning operation.

[0053]

[0065] The controller 190 can modify the process chamber environment based on an evaluation of the operating state (e.g., detection of the coating state). For example, the controller can adjust the input power to the heat sources 141 and 143 to adjust the heating of the substrate support 106 and / or the substrate 102. The controller 190 can issue warnings based on the evaluation of the operating state and generate these warnings on a display for user confirmation. For example, the controller 190 can notify the user that a cleaning operation of plate 171 is required. As described above, the controller 190 can additionally or alternatively automatically initiate a cleaning operation to remove the coating from plate 171.

[0054]

[0066] In one or more embodiments, the coating state is detected by the controller 190 when (1) a first change in reading (such as a first change 454 or a second change 455) is detected for the substrate support 106 (and / or substrate 102), and (2) a second change in reading (such as a second change 465) is detected for the plate 171 substantially simultaneously with the first change in reading. In one or more embodiments, the coating state is detected by the controller 190 when (1) a decrease in reading (such as a first change 454 or a second change 455) is detected for the substrate support 106 (and / or substrate 102), and (2) an increase in reading (such as a second change 465) is detected for the plate 171 substantially simultaneously with the decrease in reading. For example, Figure 4 shows that the second change 465 (e.g., an increase in the reading of plate 171) is substantially simultaneous with the first change 454 (e.g., a decrease in the reading of substrate support 106 and / or substrate 102). During the coating of plate 171, the coating absorbs more energy in plate 171, causing the temperature of plate 171 to rise and the temperature of substrate support 106 and / or substrate 102 to fall. In one or more embodiments, the decrease and increase in readings are substantially simultaneous if the two times are within a difference of no more than 5 seconds (e.g., no more than 1 second, e.g., no more than 0.5 seconds) relative to each other along the processing timeline. For example, using the decrease and increase in readings to detect the coating state makes it easier to accurately detect the coating state and efficiently take action (e.g., initiating a cleaning operation). This disclosure assumes that one or more profiles (e.g., line 451, line 452, line 453, line 461, and / or line 463) can be used as reference profiles for detecting the coating state. This disclosure assumes that the coating state can be detected in steady state and / or transient state.

[0055]

[0067] In one or more embodiments, the cleaning state is detected by the controller 190 if (1) an increase in reading is detected for the substrate support 106 (and / or substrate 102), and (2) a decrease in reading is detected for the plate 171 substantially simultaneously with the increase in reading. The cleaning state is detected during the cleaning operation and can indicate, for example, that an appropriate amount of coating has been removed so that the cleaning operation can be terminated and the deposition operation can be resumed. This disclosure assumes that one or more profiles (such as line 451, line 452, line 453, line 461, and / or line 463) can be used as reference profiles for detecting the cleaning state. This disclosure assumes that the cleaning state can be detected in a steady state and / or transient state.

[0056]

[0068] In one or more embodiments, each increase and decrease in reading described herein is detected if the increase or decrease in reading includes a change in ratio to the initial temperature reading within the range of 0.00015 to 0.1 (e.g., within the range of 0.005 to 0.1). In one or more embodiments, if the ratio is outside the range of 0.00015 to 0.1 (e.g., outside the range of 0.005 to 0.1), neither the coating state nor the cleaning state is detected.

[0057]

[0069] Figure 5 is a schematic partial diagram of a system including the processing chamber 100 shown in Figure 1, according to one or more embodiments. A sensor device 500 is positioned above the plate 171 and the upper window 108. The sensor device 500 can be used in place of one or more of the sensor devices 195, 196, 197, and 198 shown in Figure 1.

[0058]

[0070] The sensor device 500 includes an eyepiece 501 mounted on a sensor housing 502. The sensor device 500 includes a first optical sensor 505 configured to detect energy having a first wavelength of less than 4.0 microns, and a second optical sensor 506 configured to detect energy having a second wavelength shorter than the first wavelength. The optical sensors 505, 506 are located within the sensor housing 502. In one or more embodiments, the first wavelength is in the range of about 3.17 microns to about 3.67 microns (e.g., about 3.3 microns to about 3.5 microns). In one or more embodiments, the first wavelength is about 3.4 microns, e.g., 3.42 microns. In one or more embodiments, the second wavelength is in the range of about 2.48 microns to about 2.98 microns (e.g., about 2.6 microns to about 2.8 microns). In one or more embodiments, the second wavelength is about 2.7 microns, e.g., 2.73 microns.

[0059]

[0071] The sensor device 500 includes a first optical emitter 507 configured to emit a first beam 511 (e.g., a light beam) toward a first region of the substrate support 106 (and / or substrate 102). The sensor device 500 also includes a second optical emitter 508 configured to emit a second beam 512 (e.g., a light beam) toward a second region of the plate 171. The second region of the second beam 512 overlaps with the first region of the first beam 511 by at least 80%. The second region overlaps with the first region, for example, along a perpendicular direction from the substrate support 106 toward the plate 171. An eyepiece 501 is configured to collect the reflective portions of beams 511, 512, and optical sensors 505, 506 are configured to measure the intensity of the reflective portions of beams 511, 512 having a first wavelength and a second wavelength, respectively.

[0060]

[0072] The upper window 108 contains a first quartz, and the plate 171 contains a second quartz. The first quartz has a first hydroxyl concentration of less than parts per hundred million (ppm). In one or more embodiments, the first hydroxyl concentration is 30 ppm or less, for example, in the range of about 5 ppm to about 30 ppm. The second quartz has a second hydroxyl concentration greater than parts per seven hundred million (ppm). In one or more embodiments, the second hydroxyl concentration is 900 ppm or more. In one or more embodiments, the upper window 108 is formed of the first quartz, and the plate 171 is formed of the second quartz. Other windows, such as the lower window 110, may contain the first quartz. For example, the lower window 110 may be formed from the first quartz. The use of first and second quartz facilitates accurate and efficient measurement of the temperature of plate 171 and substrate support 106 (and / or substrate 102) during processing, and facilitates accurate and efficient detection of the coating state of plate 171. For example, plate 171 having a higher second hydroxyl concentration facilitates accurate and efficient measurement of the temperature and / or coating state of plate 171 using a second wavelength. The use of first and second quartz improves the signal-to-noise ratio of the measurement. The use of first quartz reduces or eliminates thermal non-uniformity affected by the temperature gradient of the upper window 108. For example, the gradient of hydroxyl concentration across the entire diameter of the first quartz is reduced or eliminated, improving heating uniformity. As used herein, hydroxyl concentration refers to a measured parts per million (ppm) of hydroxyl groups (e.g., groups containing oxygen atoms covalently bonded to hydrogen atoms) within or on the surface of each quartz material. In one or more embodiments, the ppm measurement of hydroxyl concentration is the measured concentration of hydroxyl groups relative to all other substances (contaminants and / or quartz, etc.) present on the respective quartz surfaces of the first or second quartz. In one or more embodiments, the hydroxyl concentration is measured by X-ray photoelectron spectroscopy (XPS) and provided in ppm units. In this disclosure, it is also considered possible to measure the ppm value of hydroxyl concentration using other measurement techniques, such as glow discharge mass spectrometry (GDMS).

[0061]

[0073] In one or more embodiments, at least a portion of the shaft 118 and / or arm 119 includes (for example, is formed from) the first quartz. In one or more embodiments, at least a portion of the shaft 135, arm 139, and / or lift pin stop 134 includes (for example, is formed from) the first quartz.

[0062]

[0074] The hydroxyl concentration can be affected, for example, by the water content and / or contaminant content in each of the first or second quartz materials. A higher hydroxyl concentration in the second quartz material results in lower transmittance of energy with the second wavelength. A higher hydroxyl concentration in the second quartz material results in higher transmittance of energy with the first wavelength.

[0063]

[0075] In one or more embodiments, the first quartz is transparent to the first and second wavelengths described herein. In one or more embodiments, the second quartz is transparent to the first wavelength and absorbent to the second wavelength. In one or more embodiments, the material of the substrate support 106 is absorbent to the first wavelength. The first quartz reduces absorption (for the first and second wavelengths), increases transmission, and reduces power consumption for heating. At a temperature of about 1000°C, the first quartz may have a higher infrared transmittance (e.g., more than 5%) compared to other materials. The first quartz may enable power savings of more than 5 kW per 100 kW consumed, for example. The first quartz increases the rate of temperature rise and improves throughput.

[0064]

[0076] In one or more embodiments, the first quartz transmits 75% or more (e.g., 80% or more) of the energy (e.g., light) having a second wavelength. In one or more embodiments, the second quartz transmits less than 5% (e.g., about 0%) of the energy (e.g., light) having a second wavelength. The first quartz is fused quartz, such as electrofused quartz. The second quartz is synthetic quartz, such as quartz formed by the soot process.

[0065]

[0077] The sensor device 500 is shown as a multi-wavelength (e.g., two-wavelength) sensor device. In this disclosure, it is assumed that a first optical sensor 505 is located in a first sensor housing of the first sensor device, a first optical emitter 507 is mounted in the first sensor housing, a second optical sensor 506 is located in a second sensor housing of the second sensor device, and a second optical emitter 508 is mounted in the second sensor housing. A first eyepiece can be mounted in the first sensor housing, and a second eyepiece can be mounted in the second sensor housing. The first and second sensor housings are positioned relative to each other such that the first optical beam 511 overlaps with the second optical beam 512 (as described above) by at least 80%.

[0066]

[0078] In addition to, or instead of, sensor device 500, sensor device 550 is positioned above plate 171 and upper window 108. Sensor device 550 can be used instead of one or more of sensor devices 195, 196, 197, and 198 shown in Figure 1. Sensor device 550 includes a third optical sensor 551 configured to detect energy having a third wavelength longer than a first wavelength. The optical sensor 551 is located within sensor housing 502. In one or more embodiments, the third wavelength is in the range of about 4.75 microns to about 5.25 microns (e.g., about 4.9 microns to about 5.1 microns). In one or more embodiments, the third wavelength is about 5.0 microns.

[0067]

[0079] The sensor device 550 includes a third optical emitter 552 configured to emit a third beam 553 (e.g., a light beam) toward a third region of the upper window 108. The sensor device 550 also includes a first optical emitter 507 and a second optical emitter 508. In one or more embodiments, the third region of the third beam 553 overlaps with the first region of the first beam 511 by at least 80%. The third region overlaps with the first region, for example, along a vertical direction from the substrate support 106 toward the upper window 108. The eyepiece 501 is configured to collect the reflective portions of the beams 511, 512, and 553, and the optical sensors 505, 506, and 551 are configured to measure the intensity of the reflective portions of the beams 511, 512, and 553 having a first wavelength, a second wavelength, and a third wavelength, respectively. The coating state of the upper window 108 can be determined by measuring a third beam 553 using a third wavelength. As the hydroxyl concentration of the third quartz decreases, the transmittance of energy with the third wavelength decreases. In one or more embodiments, the first quartz is absorbent for the third wavelength. In one or more embodiments, the first quartz transmits less than 5% (e.g., about 0%) of the energy (e.g., light) having the third wavelength.

[0068]

[0080] Sensor device 550 is shown as a multi-wavelength (e.g., three-wavelength) sensor device. In this disclosure, it is assumed that a first optical sensor 505 is located in a first sensor housing of the first sensor device, and a first optical emitter 507 is mounted in the first sensor housing; a second optical sensor 506 is located in a second sensor housing of the second sensor device, and a second optical emitter 508 is mounted in the second sensor housing; a third optical sensor 551 is located in a third sensor housing of the third sensor device, and a third optical emitter 552 is mounted in the third sensor housing. A first eyepiece can be mounted in the first sensor housing, a second eyepiece can be mounted in the second sensor housing, and a third eyepiece can be mounted in the third sensor housing. The first sensor housing, the second sensor housing, and the third sensor housing are positioned relative to each other such that the first light beam 511 overlaps with the second light beam 512 by at least 80% (as described above), and the third light beam 553 overlaps with the first light beam 511 by at least 80% (as described above).

[0069]

[0081] Figure 6 is a schematic enlarged cross-sectional view of the sensor device 500 shown in Figure 5, according to one or more embodiments.

[0070]

[0082] The sensor device 500 includes a beam splitter 521 (such as a mirror) configured to transmit energy having a second wavelength (e.g., the reflective portion of the second beam 512) toward the second optical sensor 506 and reflect energy having a first wavelength (e.g., the reflective portion of the first beam 511). In one or more embodiments, a mirror 522 (such as a second beam splitter) is configured to reflect energy having a first wavelength (e.g., the reflective portion of the first beam 511) toward the first optical sensor 505. In one or more embodiments, the mirror 522 reflects about 95% or more of the energy incident on the mirror 522.

[0071]

[0083] Figure 7A is a schematic plan view of the optical paths within the sensor device 500 of the reflective portions of the first beam 511 and the second beam 512 shown in Figure 5, according to one or more embodiments.

[0072]

[0084] After being collected through the eyepiece 501, the reflected portions of the first beam 511 and the second beam 512 proceed to the beam splitter 521. The reflected portion of the first beam 511 having the first wavelength is reflected from the beam splitter 521 and proceeds along a path toward the first optical sensor 505. The reflected portion of the first beam 511 having the first wavelength passes through the beam splitter 521 and proceeds along a path toward the first optical sensor 505.

[0073]

[0085] Figure 7B is a schematic plan view of the optical paths within the sensor device 550 for the reflective portions of the first beam 511, the second beam 512, and the third beam 553 shown in Figure 5, according to one or more embodiments. The sensor device 550 includes a beam splitter 521, a second beam splitter 722, and a mirror 723 (or other beam splitter).

[0074]

[0086] In one or more embodiments, the beam splitter 521 is configured to transmit at least 90% of the reflective portion of the second beam 512 and reflect at least 90% of the reflective portions of the first beam 511 and the third beam 553. In one or more embodiments, the second beam splitter 722 is configured to transmit at least 95% of the reflective portion of the third beam 553 and reflect at least 95% of the reflective portion of the first beam 511. In one or more embodiments, the mirror 723 is configured to reflect at least 95% of the reflective portion of the third beam 553.

[0075]

[0087] Figure 8 is a schematic side view of the beam splitter 521 shown in Figures 6 and 7, according to one or more embodiments.

[0076]

[0088] The beam splitter 521 is positioned such that the surface 523 facing the incident reflected energy is at an angle A1 with respect to the longitudinal axis of the eyepiece 501. In one or more embodiments, the angle A1 is in the range of about 40 to about 50 degrees. In one or more embodiments, the angle A1 is about 45 degrees.

[0077]

[0089] Figure 9A is a schematic graph of transmittance profiles 951-953 according to one or more embodiments. Transmittance profiles 951-953 are shown over multiple wavelengths. Line 951 is an exemplary transmittance profile of the upper window 108. Line 953 is an exemplary transmittance profile of the plate 171. Energy with a first wavelength W1 (e.g., as described above as a range) can pass through both the upper window 108 and the plate 171 to reach the substrate 102 and / or substrate support 106. At the first wavelength W1, both the upper window 108 and the plate 171 have relatively high transmittance (e.g., 80% or more).

[0078]

[0090] As shown at the second wavelength W2 (for example, as a range, as described above), energy with the second wavelength W2 can pass through the upper window 108 and be absorbed and / or reflected by the plate 171. At the second wavelength W1, the transmittance of the upper window 108 is relatively high (e.g., 80% or more), and the transmittance of the plate 171 is relatively low (e.g., less than 80%, e.g. less than 50%, less than 20%, or less than 10%, e.g. less than 5%, e.g., about 0%).

[0079]

[0091] Figure 9B is a schematic graph of transmittance profiles 971-973 according to one or more embodiments. Transmittance profiles 971-973 are shown over multiple wavelengths. Line 971 is an exemplary transmittance profile of the first quartz described above. Line 972 is an exemplary transmittance profile of the second quartz described above. Line 973 is an exemplary transmittance profile of the third quartz. As shown at a wavelength of approximately 2.73 microns (e.g., within the second wavelength range described above), the transmittance of line 971 is 75% or more (e.g., 80% or more). The transmittance of line 972 is less than 5% (e.g., about 0%). The transmittance of line 973 is in the range of 55%-70%. Line 971 is fused quartz formed using the electrofusion method. Line 972 is synthetic quartz formed using the soot method. Line 973 is fused quartz formed using the flame fusion method.

[0080]

[0092] As shown at a wavelength of approximately 2.73 microns, the first line 971 (e.g., upper window 108) has relatively high transmittance, while the second line 973 (e.g., plate 171) has relatively low transmittance.

[0081]

[0093] Figure 10 is a schematic block diagram of a substrate processing method 1000 according to one or more embodiments.

[0082]

[0094] Operation 1001 of Method 1000 includes heating a substrate that is at least partially supported by a substrate support. In one or more embodiments, the substrate is placed on a substrate support. In one or more embodiments, the substrate is placed on a substrate carrier that is placed on a substrate support.

[0083]

[0095] Operation 1003 includes flowing one or more process gases onto the substrate to form one or more layers on the substrate. Flowing one or more process gases onto the substrate includes inducing one or more process gases through the gap between the substrate and the spatial boundary. In one or more embodiments, the spatial boundary is a ceiling. The ceiling can be defined, for example, by a second surface 173 of plate 171.

[0084]

[0096] Operation 1005 includes monitoring a first temperature of the substrate or substrate support using a first optical sensor. In one or more embodiments, monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 microns to 3.67 microns.

[0085]

[0097] Operation 1007 includes monitoring a second temperature of the plate using a second optical sensor. In one or more embodiments, monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 microns to 2.98 microns.

[0086]

[0098] Operation 1009 includes detecting the coating state of the plate. In one or more embodiments, detecting the coating state includes detecting a decrease in a first temperature reading (in operation 1011) and detecting an increase in a second temperature reading substantially simultaneously with the decrease in the reading (in operation 1013). In one or more embodiments, the coating state is a predetermined thickness to which the second surface 173 and / or the first surface 172 of the plate 171 are coated with a reactive process gas.

[0087]

[0099] Operation 1015 includes adjusting the operation. Adjusting may include adjusting an operation parameter (such as the input power supplied to at least one of the chamber's heat sources), stopping the deposition in operation 1003, initiating a chamber downtime period, initiating a preventive maintenance operation (e.g., including a chamber opening operation), delaying subsequent deposition iterations, and / or initiating a cleaning operation using a cleaning recipe (such as operation 1103 of method 1100 for cleaning the chamber).

[0088]

[0100] Operation 1017 includes generating a warning. For example, the warning may indicate a plate cleaning command. In one or more embodiments, the cleaning command instructs the operator (e.g., on a user interface display) to reduce the coating on the plate. The plate can be cleaned before accumulation reduces processing efficiency. In one or more embodiments, the cleaning command provides the operator with an estimate of the coating progress, such as the remaining effective chamber operating time before processing efficiency is significantly reduced. The operator can use such an estimate of the coating progress to plan and execute appropriate maintenance activities, reduce machine downtime, decrease cost and resource expenditures, and improve the throughput of substrates using the process chamber.

[0089]

[0101] Figure 11 is a schematic block diagram of a chamber cleaning method 1100 according to one or more embodiments. Method 1100 can be performed, for example, before or after a substrate processing method 1000.

[0090]

[0102] Operation 1101 of Method 1100 includes heating the substrate support.

[0091]

[0103] Operation 1103 includes flowing one or more cleaning gases over the plate and / or substrate support to remove the coating from the plate and / or substrate support. The one or more cleaning gases may flow, for example, through the lower 136a and / or upper 136b.

[0092]

[0104] Operation 1105 includes monitoring a first temperature of the substrate support using a first optical sensor. In one or more embodiments, monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 microns to 3.67 microns.

[0093]

[0105] Operation 1107 includes monitoring a second temperature of the plate using a second optical sensor. In one or more embodiments, monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 microns to 2.98 microns.

[0094]

[0106] Operation 1109 includes detecting the clean state of the plate. In one or more embodiments, detecting the clean state includes detecting an increase in a first temperature reading (in operation 1111) and detecting a decrease in a second temperature reading substantially simultaneously with the increase in the reading (in operation 1113). In one or more embodiments, the clean state is a second predetermined thickness (e.g., thinner than the predetermined thickness of the coating state). In the clean state, the coating on the plate is reduced to or less than the second predetermined thickness.

[0095]

[0107] Operation 1115 includes adjusting the operation. Adjusting may include adjusting operation parameters (such as input power supplied to at least one of the chamber's heat sources), stopping the cleaning in operation 1103, initiating a chamber downtime period, initiating a preventive maintenance operation (e.g., including a chamber opening operation), delaying subsequent iterations of the cleaning, and / or initiating a deposition operation using a deposition recipe (such as operation 1003 of method 1000 for depositing layers on a substrate).

[0096]

[0108] Operation 1117 includes generating a warning. For example, the warning may indicate that the cleaning in operation 1103 can be completed. In one or more embodiments, the warning instructs the operator to start the deposition operation (e.g., on a user interface display).

[0097]

[0109] Information from Method 1000 and / or Method 1100 (such as the first temperature, second temperature, increase in reading, and / or decrease in reading) can be stored and tracked as data. In one or more embodiments, the data is analyzed and / or compared using averaging, differentiation, modeling, imaging, and / or other data analysis techniques. For example, optical sensors 505, 506 can capture images, and the intensity of the images can be analyzed to detect the first and second temperatures.

[0098]

[0110] The advantages of this disclosure include accurate, rapid, efficient, and automatic detection of the temperature of the substrate support 106 (and / or substrate 102) and the temperature of the plate 171; accurate, rapid, efficient, and automatic detection of the coating state of the plate 171; accurate, rapid, efficient, and automatic detection of the cleaning state of the plate 171; reduced diverse gas flows away from the substrate 102 and substrate support 106; adjustability of parameters (temperature, gas flow path, gas flow rate, and / or gas pressure, etc.) across various operating conditions (low rotation speed, high pressure, and / or low flow rate, etc.); a wider and / or more modular adjustment range; and improved deposition uniformity. The advantages of this disclosure also include reduced chamber footprint, reduced or eliminated contamination of chamber components, reduced cleaning and improved ease of cleaning, extended component life, reduced chamber downtime, and improved throughput. The advantages of this disclosure also include improved deposition reproducibility and / or cleaning reproducibility.

[0099]

[0111] As an example, the implementation of the present disclosure is modular and can be used across various processing (e.g., sedimentation) and / or washing operations (e.g., across various operating parameters).

[0100]

[0112] It is also envisioned that one or more embodiments disclosed herein may be combined. For example, one or more embodiments, features, components, operations, and / or characteristics of the processing chamber 100, controller 190, one or more sensor devices 195, 196, 197, 198, profile of Figure 4, sensor device 500, profile of Figure 9A, profile of Figure 9B, method 1000, and / or method 1100 may be combined. For example, the operations and / or parameters described in relation to Figure 4 may be combined with the operations and / or parameters of method 1000 and / or method 1100. Furthermore, it is envisioned that one or more embodiments disclosed herein may include some or all of the aforementioned advantages.

[0101]

[0113] The foregoing relates to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure may be devised without departing from its basic scope, the scope of which will be determined by the appended claims.

Claims

1. A system for processing substrates, applicable to semiconductor manufacturing, A chamber body having one or more side walls, The lid and A window, wherein one or more side walls, the window, and the cover define at least partially the interior space, One or more heat sources configured to heat the internal space, A substrate support arranged within the aforementioned internal space, A first optical sensor configured to detect energy having a first wavelength shorter than 4.0 microns, A second optical sensor configured to detect energy having a second wavelength shorter than the first wavelength, A system equipped with these features.

2. The system according to claim 1, further comprising a plate disposed between the substrate support and the window within the internal space.

3. The system according to claim 2, wherein the first wavelength is in the range of 3.17 microns to 3.67 microns.

4. The system according to claim 3, wherein the second wavelength is in the range of 2.48 microns to 2.98 microns.

5. The energy having the second wavelength is transmitted, Reflecting the energy having the first wavelength, The system according to claim 4, further comprising a beam splitter configured as such.

6. The system further includes a controller that, when executed, includes instructions that cause multiple operations to be performed, and these multiple operations are: Heating a substrate that is at least partially supported by the substrate support, One or more process gases are passed over the substrate to form one or more layers on the substrate, The first optical sensor is used to monitor the first temperature of the substrate or the substrate support, The second optical sensor is used to monitor the second temperature of the plate, The system according to claim 4, including the system described in claim 4.

7. The aforementioned operations further include detecting the coating state of the plate, and the detection is To detect an increase in the first reading of the first temperature, The increase in the second reading of the second temperature is detected substantially simultaneously with the increase in the first reading, The system according to claim 6, including the system described in claim 6.

8. A first optical emitter configured to emit a first light beam toward a first region, A second optical emitter configured to emit a second light beam toward a second region, The system according to claim 1, further comprising the second region overlapping the first region by at least 80%.

9. The system according to claim 2, wherein the window comprises a first quartz and the plate comprises a second quartz.

10. The system according to claim 9, wherein the second quartz has a second hydroxyl concentration higher than 750 ppm.

11. The system according to claim 10, wherein the first quartz has a first hydroxyl concentration lower than parts per hundred million (ppm).

12. The system according to claim 11, wherein the second hydroxyl concentration is 900 ppm or more.

13. The system according to claim 12, wherein the first hydroxyl concentration is 30 ppm or less.

14. A system for processing substrates, applicable to semiconductor manufacturing, A chamber body having one or more side walls, The lid and A window, wherein one or more side walls, the window, and the cover define an interior space at least partially, and the window includes a first quartz, One or more heat sources configured to heat the internal space, A substrate support arranged within the aforementioned internal space, A plate disposed between the substrate support and the window within the internal space, wherein the plate contains a second quartz, and the second quartz has a hydroxyl concentration higher than 750 ppm, A system equipped with these features.

15. The system according to claim 14, wherein the first quartz has a hydroxyl concentration lower than parts per hundred million (ppm).

16. The system according to claim 15, wherein the plate is disposed between the substrate support and the window.

17. The system according to claim 16, wherein the plate divides the space between the substrate support and the window into a lower and an upper section.

18. The system further includes a controller that, when executed, includes instructions that cause multiple operations to be performed, and these multiple operations are: Heating a substrate that is at least partially supported by the substrate support, One or more process gases are flowed over and beneath the substrate to form one or more layers on the substrate, A first optical sensor is used to monitor the first temperature of the substrate or the substrate support, The second optical sensor is used to monitor the second temperature of the plate, The system according to claim 17, including the system described in claim 17.

19. A system for processing substrates, applicable to semiconductor manufacturing, A chamber body having one or more side walls, The lid and A window, wherein one or more side walls, the window, and the cover define at least partially the interior space, One or more heat sources configured to heat the internal space, A substrate support arranged within the aforementioned internal space, A plate is disposed between the substrate support and the window within the aforementioned internal space, A controller that includes instructions that, when executed, cause to perform multiple operations, wherein the multiple operations are Heating a substrate that is at least partially supported by the substrate support, One or more process gases are passed over the substrate to form one or more layers on the substrate, A first optical sensor is used to monitor the first temperature of the substrate or the substrate support, The second optical sensor is used to monitor the second temperature of the plate, A controller, including A system equipped with these features.

20. Monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 microns to 3.67 microns. The system according to claim 19, wherein monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 microns to 2.98 microns.

Images