Capacitor cell

Abstract

Provided is a small and large-capacity thin-film capacitor cell that suppresses displacement and partial peeling phenomena on the electrode surface of a current collector in a capacitor, improves the bonding property between current collector substrates, and prevents the occurrence of partial peeling and the weakening of chargeability. A capacitor cell in which a dielectric is interposed between electrode materials with current collectors laminated thereon, wherein the surface of the electrode material with the current collectors laminated thereon is coated and laminated with a dielectric, and includes a green sheet having a high dielectric constant and sintered at a low temperature.

Description

Technical Field

[0001] The present invention relates to a capacitor cell, and particularly to a dielectric thin film capacitor cell with a large capacitance.

Background Art

[0002] When using a large-capacity capacitor cell as an electrical energy storage device, electrolytic capacitor cells, film capacitors, etc. are generally used. In recent years, as the demand for large-capacity batteries, typified by electric vehicles, has led to an increase in the capacitance of lithium-ion batteries, the risk of fire in lithium-ion batteries has not been completely eliminated. While propelling electric vehicles with some risk of fire, the use of nickel-metal hydride batteries and film capacitors with high output as hybrid vehicles has advanced significantly, and the trend towards shifting to fuel cell vehicles has been strengthening. Also, in fuel cell vehicles, the configuration type of hybrid vehicles using nickel-metal hydride batteries and film capacitors has been promoted.

[0003] On the other hand, a method of ensuring a large capacitance by ultra-high voltage power storage of several thousand volts (2000V or more) based on ceramic capacitors is being studied, but the high-voltage interface is an issue. Also, the development of electric double layer batteries with enhanced functions of electrolytic capacitor cells is being actively carried out, but the problems of deterioration due to charge and discharge have not been solved, and the storage voltage is low, only about one-twentieth of the storage capacity of lithium-ion batteries, so the volume is an issue, and there are limitations in reducing the manufacturing cost due to the price of components, etc.

[0004] Also, so-called capacitors such as multilayer ceramic capacitor cells have a problem of current leakage due to the rapid discharge pressure during discharge, which reduces the overall performance. Furthermore, so-called batteries that store electrical energy through chemical changes such as lithium-ion batteries have a problem that their performance deteriorates due to the memory effect when charging and discharging are partially performed.

[0005] To solve such various problems, for example, an electric energy storage device using the giant magnetoresistance effect (referred to as GMR) has been proposed (such as Patent Document 1). Since the magnetic section of these electric energy storage capacitor cells using GMR is formed of a thin film, in order to increase the capacitance, the magnetic section needs to be expanded in the two-dimensional direction to increase the area. However, in that case, there has been a problem that it is difficult to miniaturize the device.

[0006] Also, the inventor of the present application previously disclosed in Patent Document 2 an idea of increasing the current collection efficiency by using nano-particles (about 200 to 2000 nm) as a current collector formed at the interface between an electrode material and a dielectric in order to increase the capacitance in thin film capacitor cells typified by ceramic capacitor cells, thereby increasing the amount of stored electric energy. These thin film capacitor cells utilize the electric energy stored in the current collector formed at the interface between the electrode material and the dielectric, and can be widely used for applications ranging from small-capacity products for memory backup to medium-capacity products for power assist in electric vehicles and large-capacity products as a substitute for rechargeable batteries for power storage such as power supply in electric vehicles. However, in conventional ceramic capacitor cells, the capacitance is low, and it has been necessary to connect a large number of them in parallel for practical use.

[0007] Also, the breakdown voltage of a unit capacitor cell (referred to as a cell) of such a thin film capacitor cell is determined by the breakdown voltage of the dielectric that is a component thereof, that is, an insulator that separates electrons and holes, and depends on the material, thin film thickness, uniformity, etc. For example, in the case of a barium titanate-based dielectric, when the thickness of the dielectric is 1 μm, it is about 200 V. Since thin film capacitor cells have the property of being damaged when a voltage equal to or higher than the breakdown voltage of the dielectric is applied, in applications that require a high voltage, it has been necessary to increase the thickness of the dielectric or connect a plurality of unit capacitor cells in series for use.

[0008] Also, although there is a technology disclosed in which a large number of nanocarbons and the like are laminated in an electric double layer capacitor cell to expand the surface area of the ion aggregate and secure capacitance, since the electrolytic solution is used, the storage voltage is as low as 2.5 V, so it was difficult to expand the storage capacitance to more than one-twentieth of that of a lithium ion battery. On the other hand, capacitor cells that do not use an electrolytic solution, such as ceramic capacitor cells, also had the problem of low capacitance.

[0009] As described above, increasing the capacitance of capacitor cells is eagerly desired in various applications, and although various methods have been proposed, each method has many problems such as miniaturization of volume, weight reduction, deterioration, and cost.

[0010] In view of such circumstances, the applicant developed a thin film capacitor cell that is small and can obtain a large amount of electrical energy with a large capacitance in Utility Model Registration No. 3216923.

[0011] The above-mentioned invention is a dielectric thin film capacitor cell, wherein the thin film capacitor cell comprises a first electrode formed of a conductive material, a second electrode formed of a conductive material positioned to face the first electrode, and a dielectric layer formed so as to be sandwiched between the first electrode and the second electrode. A current collecting layer is formed between the first electrode and the dielectric layer and between the second electrode and the dielectric layer by a current collecting body composed of fine particle form base materials made of any conductive substance of metal, carbon, graphite, diamond, conductive organic matter or conductive ceramic. The fine particle form base material is a current collecting body composed of two types of base materials, a base material having an outer dimension at the nanolevel and a base material having an outer dimension at the quantum level. The base material having an outer dimension at the nanolevel is formed on the surfaces of the first electrode and the second electrode, and the base material having an outer dimension at the quantum level is formed on the base material having an outer dimension at the nanolevel.

[0012] According to the above invention, a thin-film capacitor cell with a dramatically increased capacitance and storage capacity can be obtained by a synergistic effect of dramatically expanding the surface area of an electrode and enhancing electron sensitivity by using a nano-level conductive particle substrate (hereinafter also referred to as a nano substrate) and a quantum-level conductive particle substrate (hereinafter also referred to as a quantum substrate), thereby enhancing electron fluidity and electron aggregation.

[0013] Regarding a dielectric capacitor cell, by laminating nano-level and quantum-level conductive or dielectric particle substrates alone or in combination, a capacitor cell with a significantly increased capacitance can be obtained by a synergistic effect of expanding the electrode surface area and enhancing electron sensitivity, and a significantly increased storage capacity can be obtained by storing electricity at a high voltage.

Prior Art Documents

Patent Documents

[0014]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0015] However, even in the above-described invention, when laminating various nanoparticles and quantum dot substrates on the electrode surface, they cannot be stably immobilized. When laminating nanoparticles and quantum dot substrates by conventional sputtering and coating methods, the close bonding property between the current collector substrate, the electrode surface, and between the current collector substrates is not sufficient. In the configuration after simply sputtering and coating, there are problems of displacement and partial peeling between the current collector and the electrode surface in the pressure and stretching processes in the product manufacturing process, and the bonding property between the current collector substrates is weak, resulting in variations and partial peeling, and a weakening of the chargeability.

Means for Solving the Problem

[0016] The present invention is a laminated capacitor cell in which a dielectric is interposed between electrode materials. The electrode material has a coating layer in which a nanoparticle current collector is coated with titanium oxide on an electrode base sheet. The dielectric is interposed between the coating layers of the two electrode materials, and the dielectric is a green sheet having a high dielectric constant and sintered at a low temperature.

Effect of the Invention

[0017] The present invention combines a material for close solidification having heat resistance such as titanium oxide with a current collector base material for solidification, laminates nanocarbon on the surface of a thin-film titanium electrode material, and coats the inside with titanium oxide. By laminating a barium titanate ceramic sheet using the base material as an electrode, the capacitance can be increased by 1000 times or more in comparison with the case where there is no nanocarbon.

Brief Description of the Drawings

[0018]

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Embodiments for Carrying Out the Invention

[0019] First, the prior art that led to the idea of the previous invention (Utility Model Registration No. 3216923) will be described. This "prior art" shows the inventions devised and studied by the applicant before the idea of the previous invention, and is different from known technologies.

[0020] Generally, it is known that the storage capacity is proportional to the dielectric constant of the dielectric, the electrode surface area, and the storage voltage. The conventional dielectric constant is a value measured with a flat electrode surface, and the effective data when the surface area is enlarged by laminating nanoparticles or quantum particles etc. on the electrode surface and the electron sensitivity is enhanced has not been standardized.

[0021] As prior art, capacitor cells (also referred to as capacitors or electric storage devices) mainly include electrolytic capacitors, ceramic capacitors, and film capacitors. The conventional electric double-layer capacitor cell aims at a battery without a risk of ignition, and is a method in which unevenness is formed on the electrode surface of the electrolytic capacitor, a thin-film dielectric is formed by an oxidation treatment, and ionization aggregation occurs with an electrolytic solution. Taking advantage of the relatively high capacitance, as a measure for its expansion, the expansion of the ion aggregation part is carried out with nanocarbon etc. to increase the capacitance, and the manufacturing method mainly uses a film winding method. However, the electric double-layer capacitor cell has disadvantages such as a low storage voltage (2.5V to 3.8V), charge-discharge deterioration due to the use of an electrolytic solution, and the inability to perform 100% charge and discharge. When using nanocarbon, due to reasons such as difficulty in cost reduction, it has not been widely popularized.

[0022] On one hand, ceramic capacitors are available in the powder sintering method and the multilayer film method. They have the characteristics of low unit capacitance but high breakdown voltage. Since miniaturization is required for on-board use as a noise countermeasure device or a device mainly for current smoothing and voltage conversion, most of them adopt the powder sintering method. On the other hand, film capacitors have been used as stable breakdown voltage devices in the form of film wound capacitors with plastic films as dielectrics.

[0023] The prior invention focuses on a ceramic capacitor that has no risk of ignition, little charge-discharge deterioration, can achieve a high storage voltage, and is expected to have an advanced dielectric constant among capacitor cells. By using nano-level fine particle substrates and quantum-level fine particle substrates to expand the surface area of the current collector part, it has become possible to dramatically increase the capacitance and storage capacity. The present invention was extremely difficult to achieve with the powder sintering method, which is the main conventional manufacturing method for ceramic capacitors. However, in the present invention, it can be realized by vapor deposition methods such as sputtering or coating methods through micronization.

[0024] It has been demonstrated that by micronizing the conductive material to the nano-level or quantum-level, the electron mobility increases and the electrical resistance decreases. The prior invention expands the surface area of the current collector and maximizes the electron sensitivity by constructing a laminated structure of interfaces adjacent to the nano-level or quantum-level in the current collector part of the capacitor cell, and aims to dramatically expand the capacitance of the capacitor cell by their synergistic effect. Also, high-breakdown voltage dielectric capacitors such as ceramic capacitor cells can store electricity at high voltages and enable high-capacity storage.

[0025] Hereinafter, the thin film capacitor cell according to the prior invention, which is the basis of the present invention, will be described in detail again. A preferred embodiment of the thin-film capacitor cell of the prior invention will be described with reference to the drawings. These drawings are schematic for explanatory purposes and are different from the details of the actual dimensions and shapes. FIG. 1 is a cross-sectional view schematically showing a dielectric thin-film capacitor cell 1 according to the prior invention. The thin-film capacitor cell 1 includes a support substrate 2, a buffer layer 3, a first electrode 4, a current collector layer 5, a dielectric layer 6, a second electrode 7, and terminals 8 and 9.

[0026] The support substrate 2 is not particularly limited. However, in the case of a multilayer film-type capacitor cell, a highly insulating and flexible resin film used in a film capacitor is used. In the case of a sheet-type capacitor cell, in addition to the resin film, a highly insulating ceramic thin-film sheet is used. For example, it can be formed of a single crystal of silicon, a single crystal of strontium titanate (SrTiO3), a single crystal of magnesium oxide (MgO), a single crystal of zirconium oxide (ZrO2), or a glass substrate. From the viewpoint of cost and the like, a single crystal silicon material is often used. Further, the thickness of the support substrate 2 is not particularly limited as long as the mechanical strength of the entire electrical energy storage device 1 can be ensured. For example, it may be set to about 10 to 1000 μm.

[0027] The buffer layer 3 is formed on the upper layer of the support substrate 2 and serves as a barrier layer to prevent the reaction between the support substrate 2 and the electrode thin film constituting the first electrode 4. The material for forming the buffer layer 3 can be formed, for example, by zirconium oxide (ZrO2), magnesium aluminate (MgAlO4), γ -Al2O3, strontium titanate (SrTiO3), lanthanum aluminate (LaAlO3), etc. Specifically, from these, it is preferable to select a material that has excellent lattice matching with the support substrate 2 and whose thermal expansion coefficient is between that of the support substrate 2 and the thin film material constituting the dielectric layer 6 to form the buffer layer 3. Also, the buffer layer 3 may have a single-layer structure or a multi-layer structure. And the thickness of the buffer layer 3 is not particularly limited as long as the function as a barrier layer to prevent the reaction between the support substrate 2 and the electrode thin film constituting the first electrode 4 can be ensured. For example, it may be set to about 1 to 1000 nm. Note that the buffer layer 3 may not be provided. When the buffer layer 3 is not provided, the first electrode 4 is formed on the surface of the support substrate 2.

[0028] For the first electrode 4, the electrode materials of conventional ceramic capacitors can be used. For example, there are copper (Cu), nickel (Ni), etc., and it can be formed by conductive metals or alloys such as titanium (Ti), gold (Au), silver (Ag), etc. Also, the thickness of the electrode thin film of the first electrode 4 is not particularly limited as long as it can function as one electrode of the thin film capacitor cell 1. For example, it may be set to about 500 - 2000 nm.

[0029] The current collector layer 5 is a current collector composed of two types of substrates, a substrate having an outer dimension at the nano level in terms of size (hereinafter also referred to as a nano-level substrate) and a substrate having an outer dimension at the quantum level (hereinafter also referred to as a quantum-level substrate). These current collectors are shown as spherical in the schematic diagram of FIG. 1, but their shapes can be any of the same shapes such as spherical, body-shaped, shaped with irregularities, rod-shaped, fibrous, short-fibrous, etc., or a mixture of each shape. Or it may be a shape with a hollow inside in the above-mentioned shape.

[0030] The substrates of these electron collectors are such that the surface area of both the nanoscale substrate and the quantum-level substrate is enlarged, they are made into fine particles, and by mixing the nanoscale substrate and the quantum-level substrate, the electron fluidity is increased, the electrical resistance is decreased, and it is important that they function to enhance the electron sensitivity.

[0031] The electron collector layer 5 is composed of fine particles of a metallic conductive substance, but any conductive substance such as metal, carbon, graphite, diamond, conductive organic matter, or conductive ceramic may be used. Also, as the magnetic material, a soft magnetic material such as an iron-cobalt alloy or a material with an extremely high magnetoresistance at room temperature due to the colossal effect (giant magnetoresistance effect) like manganese oxide may be selected. Furthermore, a superconducting material with extremely high electron sensitivity may be selected.

[0032] Figure 2 is an enlarged view schematically showing the electrode and the electron collector layer portion of the previous invention's Example 1. The electron collector layer 5 of this example is formed on the surface of the first electrode 4 (upper layer in Figure 2) while controlling the particle diameter by a sputtering method or the like on the nanoscale fine particle layer 5a of the electron collector, with the quantum-level fine particle layer 5b.

[0033] The substrate 5a having nanoscale outer dimensions has an outer dimension where any of the length, width, and height is less than 1000 nm, preferably an outer dimension where any of the length, width, and height is less than 100 nm. Also, in the previous invention, the substrate 5b having quantum-level outer dimensions has an outer dimension where any of the length, width, height, or tip shape is approximately 1 nm or less. However, these substrates are fine particles, and their shapes are not necessarily formed into the same shape, and their sizes do not necessarily have a constant aspect ratio depending on the shape, nor do they need to be of the same size or shape. In the previous invention, a good effect is obtained by being composed of the substrate 5a having nanoscale outer dimensions with a particle size of 1000 nm or less (more preferably 100 nm or less) and the substrate 5b having quantum-level outer dimensions of 1 nm or less.

[0034] As the base material 5b at the quantum level, those commercially available as so-called quantum dots can be used. FIG. 5 schematically shows representative shapes other than spherical ones. These materials called quantum dots can obtain various shapes in the manufacturing process. In FIG. 3, a tetra-pot shape quantum level, b rod-shaped quantum level, c long fiber-shaped or short fiber-shaped quantum level, d rod-shaped quantum level with a hollow interior, e cube-shaped quantum level, f body-shaped (quantum level with irregularities on a cube) are shown as examples. These quantum levels may have their shapes deformed or combined during the manufacturing process, distribution process, or usage conditions, etc. However, the shapes themselves are not a problem, and it is important that they have an enlarged surface area as a charge collector. Also, they do not need to be of the same shape, and combinations or mixtures of these are also acceptable.

[0035] FIG. 6 is an electron microscope enlarged view of an actual tetra-pot shape cadmium selenide (CdSe) quantum level. This CdSe tetra-pot structure quantum level is one in which benzene rings having cadmium (Cd) and selenium (Se) grow as several arms on a zinc blende core. The quantum level shape is not accurately shown as it varies depending on the manufacturing method (quantum growth process and mass production process), as shown in FIG. 5.

[0036] The charge collector layer 5 is set to have a thickness of about 200 to 2000 nm in total, and the number of layers is formed from several layers to about 20 layers and is combined and laminated to a thickness of about 1 μm to 2 μm. For these composite laminations, sputtering and coating methods can be repeatedly laminated multiple times. FIG. 2 shows an example in which two layers of quantum level base materials are laminated on top of two layers of nano-level base materials.

[0037] The material of the microparticles 5a uses the conductive substrate. When the same material as the first electrode 4 is used as the material of the microparticles 5a, although it depends on the shape of the microparticles, the surface area of the electrode can increase by 100 to 1000 times. Also, when a magnetic material or a superconducting material is used, the amount of electrical energy stored can be further increased by further expanding the current collecting effect of the magnetic field or the electron sensitivity. Although it depends on the type of magnetic material or superconducting material and the magnetization conditions, it is also conceivable to increase it by several tens of times or more.

[0038] The dielectric layer 6 is formed on the upper layer of the current collecting layer 5 laminated on the first electrode 4. As the material of the dielectric layer 6, a material having a high dielectric constant, for example, barium titanate, is used. The dielectric layer 6 can be formed using various thin film formation methods such as, for example, vacuum evaporation method, sputtering method, pulsed laser deposition method (PLD), metal organic chemical vapor deposition method (MOCVD), metal organic decomposition method (MOD), and liquid phase method (CSD method) such as sol-gel method. Particularly when it is necessary to form the dielectric layer 6 at a low temperature, it is preferable to use plasma CVD, photo CVD, laser CVD, photo CSD, or laser CSD method.

[0039] On the surface (upper layer) of the dielectric layer 6, nano-level microparticles 5a and quantum-level microparticles 5b are formed as current collecting layers in the same manner as the first electrode 4 while controlling the particle diameter by a method such as sputtering. The number of laminated layers is about 5 layers and are formed together, and the current collecting layer is compositely laminated to a thickness of about 1 μm to 2 μm.

[0040] The second electrode 7 is formed as a thin film on the upper layer of the current collecting layer 5 formed on the upper layer of the dielectric layer 6. The second electrode 7 is not particularly limited as long as it has conductivity, and can be formed of the same material as the first electrode 4, but it is preferable to consider lattice matching in manufacturing. Also, since it can be formed at room temperature, it can also be formed using base metals such as iron (Fe) and nickel (Ni), and alloys such as WSi and MoSi. Also, the thickness of the electrode thin film of the second electrode 7 is not particularly limited as long as it can function as the other electrode of the thin film capacitor cell, and can be set to about 1 to 10 μm, for example.

[0041] Terminal 8 is one terminal drawn from the first electrode 4 for connection to an input / output circuit (a charging circuit or a discharging circuit in this embodiment), and for drawing out terminal 8, the first electrode 4 is exposed and partially exposed by masking. Terminal 9 is the other terminal drawn from the second electrode 7 for connection to the input / output circuit. By forming as described above, a charge collecting layer 5 is formed between the first electrode 4 and the dielectric layer 6 and between the second electrode 7 and the dielectric layer 6.

[0042] The above-described thin-film capacitor cell 1 charges (stores) electric charge (electrical energy) by connecting terminals 8 and 9 to a charging circuit. At this time, if the nano-particles 5a and quantum particles 5b of the charge collecting layer 5 are made of a magnetic material, the giant magnetoresistance effect can prevent current leakage and more electric charge can be stored by the dielectric layer 6. Then, by switching terminals 8 and 9 from the charging circuit to the discharging circuit, the charged electric charge is discharged to supply electrical energy to the load and it operates as a thin-film capacitor cell.

[0043] According to this embodiment, since a charge collecting layer 6 composed of nano-level particles 5a of a charge collector and quantum-level particles 5b is formed between the first electrode 4 and the dielectric layer 6 and between the second electrode 7 and the dielectric layer 6, the surface areas of the first electrode 4 and the second electrode 7 can be enlarged, and thus the electrical energy that can be stored can be increased.

[0044] In the foregoing example, the particle layer is formed on the first or second electrode. Although this particle-form base material can also be formed on the dielectric layer, in this case, the conductive organic substance or conductive material used as the material needs to consider the lattice matching with the dielectric substance, which is not preferable.

[0045] In addition, when the nano substrate 5a and the quantum substrate 5b of the electron collector layer 5 are formed of a magnetic material, when a voltage is applied between the first electrode 4 and the second electrode 7, the electric field can improve the current collection rate due to the magnetic properties of the nano particles 5a and the quantum substrate 5b, and more electrical energy can be accumulated.

[0046] The above-mentioned electron collector layer 5 is formed between the first electrode 4 and the dielectric layer 6 and between the second electrode and the dielectric layer 6, respectively. However, either one of them can expand the surface area of the electrode, increase the current collection rate, and enhance the electron sensitivity.

[0047] When forming the nano substrate 5a and the quantum substrate 5b of the electron collector layer 5 described above with a magnetic material, the fine particle layer may be formed in a pre-magnetized state, or it may be manufactured as an electric energy forming device and magnetized by applying an external magnetic field before using the electric energy forming device. If it is pre-magnetized, there is no need to magnetize it later, and no circuits or devices for that purpose are required.

[0048] FIG. 3 shows another embodiment in which the electron collector layer 5 is formed on the surface of the first electrode 4, and its structure is such that the same nano particle layer 5a (two layers) and quantum particle layer 5b (two layers) are further formed on the nano-level fine particle layer 5a (two layers) and the quantum-level fine particle layer 5b (two layers). In this case, the manufacturing method is to sequentially repeat sputtering multiple times.

[0049] In the embodiment of FIG. 3, the quantum-level fine particle layer 5b is formed on the nano-level fine particle layer 5a. However, it is also possible to form the quantum-level fine particle layer 5b on the first electrode 4 and then form the nano-level fine particle layer 5a thereon.

[0050] As described above, by repeatedly and alternately laminating the electron collector layer 5 with the nano-level particle layer 5a and the quantum-level particle layer 5b, a further increase in the surface area can be achieved. This lamination can be formed over several layers. As the number of laminated layers increases, the surface area also expands, and it is possible to increase the current collection rate. However, the current collection rate does not necessarily increase in proportion to the number of laminated layers. The number of sputtering times increases, and manufacturing time and costs are required. Therefore, in reality, it is set to 5 to 20 layers.

[0051] FIG. 4 shows another embodiment in which the electron collector layer 5 is formed by mixing the particles of the quantum-level particle layer 5b among the particles of the nano-level particle layer 5a. By mixing the quantum level (or quantum-level particles) among the nano-particles (gaps) in this way, gaps are generated between the particles, and it becomes possible to effectively increase the current collection rate and electron sensitivity.

[0052] The electron collector having such a configuration can be formed into a film by previously mixing a nano-particle substrate and a quantum-level substrate and using a coating method or a sputtering method. Further, it can be formed by dispersing the nano-particles in a dispersed state (a state of forming a film with gaps) or in a cluster (a group of several) state and sputtering the quantum-level substrate thereon. In the above-described embodiments, each layer of the thin-film capacitor cell is laminated in a rectangular flat shape, but a free shape can be selected by a masking method or a thin-film forming method.

[0053] FIG. 7 shows a thin-film capacitor cell in which the thin-film capacitor cell 1 of the above embodiment is formed into a cylindrical shape as a multilayer film. This thin-film capacitor cell is manufactured as a multilayer film with the first electrode 4, the electron-collecting body layer 5, the dielectric layer 6, the electron-collecting body layer 5, the second electrode 7, the electron-collecting body layer 5, the dielectric layer 6, and the electron-collecting body layer 5 as unit unit layers on the upper layer of the buffer layer 3. When winding, an initial end process is performed around a cylindrical material made of an insulating material, and the first electrode 4 film 4 is placed on the buffer layer 3, and then the dielectric layer 6... is sequentially laminated alternately in this manner and wound up. On the surface of the first electrode 4, the electron-collecting body layer 5 shown in FIG. 1 is formed as a thin film layer by a sputtering method or the like, and similarly, the electron-collecting body layer 5 shown in FIG. 1 is formed as a thin film layer on the surface of the second electrode 7. This method has the same manufacturing process as a film capacitor, and since an insulating base is used at the bottom, the risk of dielectric breakdown between unit layers is small, and it can be said that it is safer than a film capacitor.

[0054] For the terminals 8 and 9 of the electrode part, the external connection or the external configuration, etc. may simply inherit the process of a film capacitor or an electric double layer capacitor cell. The number of stacked layers of the capacitor, that is, the number of turns of the dielectric layer, is set to about 100 to 1000 turns, for example.

[0055] (Charge and Discharge Circuit Diagram) FIG. 8 is a block diagram showing an example of a charge and discharge circuit applied to the above-described embodiment. In the present Example 1, there are a charging circuit C1 and a discharging circuit C2 in which one terminal 8 and the other terminal 9 of the thin-film capacitor cell 20 are switchably connected by a switch 21. In the discharging circuit C2, an auxiliary capacitor cell 30 is attached between the thin-film capacitor cell 20 and the DC / DC converter 40, and the conversion is performed until the stored charge amount of the thin-film capacitor cell 20 approaches 0.

[0056] When the charging circuit C1 is selected by operating the switch 21, the thin-film capacitor cell 20 is charged from the power supply device 22. When directly connected to a DC power supply during the initial charging of the thin-film capacitor cell 20, a large current may flow, which may exceed the allowable current value. Therefore, it is preferable to add a constant current control function or current limiting means for limiting the input of a large current to the power supply device 22.

[0057] That is, when the discharge circuit C2 is selected by the switch 21, the stored charge is discharged from the thin-film capacitor cell 20 to the DC / DC converter 40 via the auxiliary coil 23. This auxiliary coil 23 is inserted to receive the rapid discharge pressure. Also, an auxiliary capacitor cell 30 for primarily storing charge is incorporated in the front part of the DC / DC converter 40. Thereby, when the discharge voltage of the thin-film capacitor cell 20 is higher than the set discharge voltage by the auxiliary capacitor cell 30, a step-down type circuit is formed, and when the discharge voltage of the thin-film capacitor cell 20 is lower, the device is switched to a step-up type.

[0058] Hereinafter, the configuration of the capacitor cell according to the present invention, which is an improvement and evolution of the above-described prior invention, and its manufacturing method will be described in detail.

[0059] FIG. 9 is a diagram showing the laminated structure of the capacitor cell according to the present invention, in which a laminated structure of various nanoparticles and quantum dot substrates is stably fixed on the electrode surface disclosed in the above-described prior invention.

[0060] As in the prior invention, when nanoparticles and quantum dot substrates are laminated by sputtering and coating methods, the close bonding property between the base material for the current collector, the electrode surface, and between the base materials for the current collector is insufficient. In the configuration after simply sputtering and coating, displacement and partial peeling occur between the current collector and the electrode surface in the pressure and stretching processes in the product manufacturing process, the bonding property between the current collector base materials is weak, variations and partial peeling occur, resulting in weakening of the chargeability.

[0061] The capacitor cell of the present invention has a structure in which an electrode base material sheet 10, a current collector nanoparticle layer 11, a titanium oxide coating layer 12, and a dielectric layer 13 are laminated. In particular, it solidifies by compounding a material that is heat-resistant and closely solidifies, such as titanium oxide, with the current collector base material. This method laminates nanocarbon on the surface of the thin-film titanium electrode material and internally coats it with titanium oxide, and laminates a barium titanate ceramic sheet using the base material as an electrode.

[0062] In the comparative demonstration experiment with and without nanocarbon, the capacitance increased by more than 1000 times. The present invention is an electrode base material in which an effective current collector base material is laminated singly or in a mixture of plural, and a current collector is laminated on the surface of the electrode material using an effective immobilization base material of barium titanate.

[0063] A method for manufacturing a capacitor cell in which a dielectric is incorporated between electrode materials with a current collector laminated thereon coats and laminates a dielectric on the surface of the electrode material with a current collector laminated thereon. At that time, a material having a high dielectric constant centered on barium titanate is used.

[0064] A green sheet that can maintain a high dielectric constant by low-temperature sintering is interposed between the current collectors, and the current collectors are laminated. The dielectric base material is a ceramic, plastic, ceramic-plastic composite, etc., and a plurality of types of capacitor cells can be manufactured by selecting a ceramic capacitor cell, a plastic capacitor cell, or other dielectrics.

Explanation of symbols

[0065] 1 Thin-film capacitor cell 4 First electrode 5 Current collector layer 5a Nanoscale fine particle layer of the current collector layer 5b Quantum size fine particle layer of the current collector layer 6 Dielectric layer 7 Second electrode 8, 9 Roll capacitor cell terminals 10 Electrode base material sheet 11 Current collector nanoparticle layer 12 Titanium oxide coating layer 13 Dielectric layer

Claims

1. A stacked capacitor cell having a dielectric interposed between electrode materials, The electrode material has a coating layer in which a nanoparticle current collector is coated with titanium oxide on an electrode substrate sheet, The dielectric is interposed between the coating layers of the two electrode materials, The dielectric is a low-temperature sintered green sheet having a high dielectric constant. A capacitor cell comprising:

2. The dielectric is a barium titanate ceramic, a barium titanate plastic, or a barium titanate ceramic-plastic composite.

2. The capacitor cell of claim 1.

3. The current collector is a nanoparticle laminate of carbon, graphite, diamond, conductive organic material, or conductive ceramic.

2. The capacitor cell of claim 1.

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