Metal Substrate Semiconductor Cooling Sheet

Abstract

Provided is a metal substrate semiconductor cooling sheet that can effectively improve the impact resistance performance and improve the reliability of the product. 【Solution means】The metal substrate semiconductor cooling sheet includes a P-type semiconductor 1, an N-type semiconductor 2, and a substrate group 3. The substrate group includes a metal plate 31, an epoxy ceramic thermal conductive adhesive layer 32 coated on the metal plate, and a copper foil 33 coated on the epoxy ceramic thermal conductive adhesive. Between two opposing substrate groups, an epoxy structural adhesive 4 for sealing and vibration prevention is filled around all the P-type semiconductors and N-type semiconductors. Since the adhesive performance of the epoxy ceramic thermal conductive adhesive layer is excellent, the impact resistance performance of the cooling sheet is excellent. By filling the epoxy structural adhesive between two opposing substrate groups, not only can the cooling sheet be provided with a waterproof function, but also the structural strength of the entire cooling sheet can be strengthened, and when the cooling sheet accidentally drops, it can play a buffering role.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor refrigeration, and specifically to a metal substrate semiconductor refrigeration sheet.

Background Art

[0002] A semiconductor refrigeration sheet, abbreviated as TEC, is a device that generates heat and cold by the thermoelectric effect of semiconductors, and is also called a thermoelectric refrigerator. The semiconductor refrigeration sheet has characteristics such as no noise, no vibration, no need for refrigerant, small volume, and light weight, and has reliable operation, simple operation, and easy adjustment of heat and cold.

[0003] Generally, a conventional semiconductor refrigeration sheet generally uses ceramic as a substrate. However, since ceramic is highly brittle, when it accidentally drops during use, the semiconductor refrigeration sheet is likely to be damaged. Therefore, the semiconductor refrigeration sheet has been improved by people. The patent document with patent application number CN114623623A discloses a TEC semiconductor refrigeration sheet using a metal panel package, which relates to the technical field of semiconductor refrigeration sheets. Specifically, it is a P-type semiconductor, an N-type semiconductor, and a metal plate. The N-type semiconductor is distributed in parallel on one side of the P-type semiconductor, and deflectors are fixed to both the top and bottom of the P-type semiconductor and the N-type semiconductor. A thermally conductive insulating adhesive layer is provided on the surface of the deflector, and the metal plate is connected to the surface of the thermally conductive insulating adhesive layer. The TEC semiconductor refrigeration sheet using the metal panel package uses an aluminum alloy plate as the metal plate, has an excellent temperature transfer effect, greatly enhances the strength of the semiconductor refrigeration sheet, improves the stress-bearing capacity of the semiconductor refrigeration sheet, and is advantageous for avoiding the semiconductor refrigeration sheet being fragile and breaking during mounting or use.

[0004] However, there are still defects in the technical solution. A thermal conductive insulating adhesive layer 4 and an insulating layer 6 are provided between the deflector 3 and the metal plate 5, which greatly inhibits the transfer of cold and warm heat through the thermal conductive insulating adhesive layer 4 and the insulating layer 6, reducing the efficiency of cooling and heat dissipation. Moreover, the package form between the two opposing metal plates 5 is not disclosed in the technical solution. Summary of the Utility Model

[0005] The present invention aims to solve the problems of the transfer efficiency of cold and warm heat and the impact resistance of the semiconductor cooling sheet in the above-mentioned prior art.

[0006] To solve the above technical problems, the present invention provides a metal substrate semiconductor cooling sheet including a P-type semiconductor, an N-type semiconductor, and a group of substrates provided at both ends of the P-type semiconductor and the N-type semiconductor. The group of substrates includes a metal plate, an epoxy ceramic thermal conductive adhesive layer coated on the metal plate, and a copper foil coated on the epoxy ceramic thermal conductive adhesive. The metal plate, the epoxy ceramic thermal conductive adhesive layer, and the copper foil are bonded by thermal pressure bonding. The P-type semiconductor and the N-type semiconductor are electrically connected to the copper foil etched by soldering. An epoxy structural adhesive for sealing and vibration prevention is filled around all the P-type semiconductors and N-type semiconductors between two opposing groups of substrates.

[0007] According to the above structure, after the epoxy ceramic thermal conductive adhesive layer is provided between the metal plate and the copper foil, the metal plate, the epoxy ceramic thermal conductive adhesive layer, and the copper foil are closely adhered by heat pressure bonding. Since the adhesive performance of the epoxy ceramic thermal conductive adhesive layer is excellent, the impact resistance performance of the cooling sheet is excellent. Also, since both the voltage resistance performance and the aging deterioration of the epoxy ceramic thermal conductive adhesive layer are excellent, the overall performance of the cooling sheet is excellent.

[0008] By replacing the thermal conductive insulating adhesive layer and the insulating layer in the prior art with an epoxy ceramic thermal conductive adhesive layer, the transfer of cold and warm heat becomes more direct, and the performance of the cooling sheet can be effectively improved.

[0009] By filling an epoxy structural adhesive between two opposing substrate groups, not only can the cooling sheet be given a waterproof function, but also the structural strength of the entire cooling sheet can be enhanced. When the cooling sheet accidentally drops, it can play a buffering role, effectively improving the impact resistance performance, and further improving the reliability of the product using the cooling sheet.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Description of Reference Numerals

[0011] 1 P-type semiconductor, 2 N-type semiconductor, 3 substrate group, 31 metal plate, 32 epoxy ceramic thermal conductive adhesive layer, 33 copper foil, 3a cold piece, 3b hot piece, 4 epoxy structural adhesive, 5 boss

[0012] Hereinafter, the present invention will be described in more detail with reference to the drawings and embodiments.

[0013] As shown in FIGS. 1 to 5, the metal substrate semiconductor cooling sheet includes a P-type semiconductor 1, an N-type semiconductor 2, and a substrate group 3 provided at both ends of the P-type semiconductor 1 and the N-type semiconductor 2.

[0014] The substrate group 3 includes a metal plate 31, an epoxy ceramic thermal conductive adhesive layer 32 coated on the metal plate 31, and a copper foil 33 coated on the epoxy ceramic thermal conductive adhesive layer 32. The metal plate 31, the epoxy ceramic thermal conductive adhesive layer 32, and the copper foil 33 are bonded by thermocompression bonding.

[0015] In this embodiment, since the cost performance of the aluminum plate is high, an aluminum plate is preferably used as the metal plate 31. Usually, the thickness of the aluminum plate is 0.2 mm to 2 mm. In this embodiment, the thickness of the aluminum plate is 0.5 mm to 1 mm.

[0016] Usually, the thickness of the copper foil 33 is 0.05 mm to 0.8 mm. In this embodiment, the thickness of the copper foil 33 is 0.1 mm to 0.3 mm.

[0017] The epoxy ceramic thermal conductive adhesive layer 32 has excellent adhesiveness, withstand voltage performance, and aging resistance. The epoxy ceramic thermal conductive adhesive layer 32 is applied between the metal plate 31 and the copper foil 33, and the metal plate 31, the epoxy ceramic thermal conductive adhesive layer 32, and the copper foil 33 are closely contacted by heat and pressure bonding. The obtained cooling sheet has excellent impact resistance performance.

[0018] Usually, the thickness coated with the epoxy ceramic thermal conductive adhesive is 30 μm to 150 μm. In this embodiment, the thickness coated with the epoxy ceramic thermal conductive adhesive is 50 μm to 100 μm. Therefore, after replacing the thermal conductive insulating adhesive layer and the insulating layer in the prior art with the epoxy ceramic thermal conductive adhesive layer 32, the transfer of cold and warm heat becomes more direct, and the performance of the cooling sheet can be effectively improved.

[0019] Usually, the epoxy ceramic thermal conductive adhesive layer is an alumina thermal conductive adhesive layer, a boron nitride thermal conductive adhesive layer, an aluminum nitride thermal conductive adhesive layer, or a silica thermal conductive adhesive layer.

[0020] After the hot pressing process is completed, the formed substrate groups 3 are etched with different circuit designs respectively, so that cold plates 3a and warm plates 3b as shown in FIGS. 2 and 3 are obtained.

[0021] Between the cold plate 3a and the warm plate 3b, a P-type semiconductor 1 and an N-type semiconductor 2 are welded by soldering, and the P-type semiconductor 1 and the N-type semiconductor 2 are welded to the etched copper foil 33.

[0022] In this embodiment, between the two opposing substrate groups 3, between the cold plate 3a and the warm plate 3b, an epoxy structural adhesive 4 for sealing and vibration prevention is filled around all the P-type semiconductors 1 and N-type semiconductors 2.

[0023] In this embodiment, as shown in FIG. 4, the epoxy structural adhesive 4 is filled at least between the outermost P-type semiconductor 1 and N-type semiconductor 2.

[0024] By filling the epoxy structural adhesive 4 between the cold plate 3a and the warm plate 3b, not only can the cooling sheet be given a waterproof function, but also the structural strength of the entire cooling sheet can be enhanced. When the cooling sheet accidentally drops, it can play a buffering role, effectively improve the shock resistance performance, and further improve the reliability of the product using the cooling sheet.

[0025] To adapt to different product needs, the metal plate may be rectangular, circular or annular. The metal plates shown in FIGS. 1 to 4 are rectangular.

[0026] In addition to the above forms, bosses 5 may be provided on the outer surface of the metal plate, and an accommodation cavity is surrounded by the bosses 5 and the outer surface of the substrate group 3.

[0027] Since there is no need for sealing, the boss 5 may be continuous or discontinuous. The boss 5 is used to transfer cold, heat or warm heat. At the same time, as long as a receiving cavity having a height difference can be formed between the outer surface of the metal plate and the outer surface of the boss 5, a coil, a magnet or the like may be provided in the receiving cavity, and it may be used in the manufacture of a wireless magnetic attraction charger.

[0028] After the epoxy ceramic heat-conducting adhesive layer 32 is provided in the structure of the technical solution, due to the excellent adhesion performance of the epoxy ceramic heat-conducting adhesive layer 32, the cold sheet has excellent impact resistance performance. By filling the epoxy structural adhesive 4 between two opposing substrate groups, not only can the cold sheet be provided with a waterproof function, but also the structural strength of the entire cold sheet can be enhanced. When the cold sheet accidentally falls, it plays a buffering role, effectively improving the impact resistance performance, and further improving the comprehensive performance of the product using the cold sheet.

Claims

1. A metal substrate semiconductor cooling sheet comprising a P-type semiconductor, an N-type semiconductor, and a group of substrates provided at both ends of the P-type semiconductor and the N-type semiconductor, wherein the group of substrates includes a metal plate, an epoxy ceramic heat-conducting adhesive layer coated on the metal plate, and a copper foil coated on the epoxy ceramic heat-conducting adhesive. The metal plate, the epoxy ceramic heat-conducting adhesive layer, and the copper foil are bonded by thermocompression bonding. The P-type semiconductor and the N-type semiconductor are electrically connected to the copper foil etched by soldering, A metal substrate semiconductor cooling sheet, characterized in that an epoxy structural adhesive for sealing and vibration prevention is filled around all the P-type semiconductors and N-type semiconductors between two opposing groups of substrates.

2. The metal substrate semiconductor cooling sheet according to claim 1, wherein the metal plate is an aluminum plate, and the thickness of the aluminum plate is 0.2 mm to 2 mm.

3. The metal substrate semiconductor cooling sheet according to claim 1, wherein the thickness of the copper foil is 0.05 mm to 0.8 mm.

4. The metal substrate semiconductor cooling sheet according to claim 1, wherein the thickness of the epoxy ceramic heat-conducting adhesive is 30 μm to 150 μm.

5. The metal substrate semiconductor cooling sheet according to claim 1, wherein the epoxy ceramic heat-conducting adhesive layer is an alumina heat-conducting adhesive layer, a boron nitride heat-conducting adhesive layer, an aluminum nitride heat-conducting adhesive layer, or a silica heat-conducting adhesive layer.

6. The metal substrate semiconductor cooling sheet according to claim 1, wherein the epoxy structural adhesive is filled at least between the outermost peripheral P-type semiconductor and N-type semiconductor.

7. The metal substrate semiconductor cooling sheet according to claim 1, wherein the metal plate is rectangular.

8. The metal substrate semiconductor cooling sheet according to claim 1, wherein the metal plate is circular or annular.

9. The metal substrate semiconductor cooling sheet according to claim 1, wherein continuous bosses are provided on the outer surface of the group of substrates on one side, and an accommodation cavity is surrounded by the bosses and the outer surface of the group of substrates.

10. The metal substrate semiconductor cooling sheet according to claim 1, wherein discontinuous bosses are provided on the outer surface of the group of substrates on one side, and an accommodation cavity is surrounded by the bosses and the outer surface of the group of substrates.

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