Radiation-resistant light-emitting diode lamp module

Abstract

A radiation-resistant light-emitting diode lamp module is provided. The illumination light generating structure includes an illumination light generating structure (1), a top radiation-hard structure (2), a radiation-hard, light-transmitting structure (3), a bottom radiation-hard structure (4), and a surrounding radiation-hard structure (5). The top radiation-hard structure includes a top radiation-hard element (20) disposed above the illumination light generating structure. The radiation-hard, light-transmitting structure includes a first radiation-hard, light-transmitting element (31) disposed above the illumination light generating structure and a second radiation-hard, light-transmitting element (32) disposed above the first radiation-hard, light-transmitting element. The bottom radiation-hard structure includes a bottom radiation-hard element (40) disposed below the illumination light generating structure. The surrounding radiation-hard structure includes a surrounding radiation-hard element (50) disposed around the illumination light generating structure. The illumination light generating structure is completely covered by the top radiation-hard element, the first radiation-hard, light-transmitting element, the bottom radiation-hard element, and the surrounding radiation-hard element, thereby reducing radiation damage to the illumination light generating structure in a high-radiation environment.

Description

[Technical Field]

[0001] The present invention relates to a lamp module, and more particularly to a radiation-resistant light-emitting diode lamp module. [Background technology]

[0002] In the prior art, light-emitting diode lamps are susceptible to radiation damage in high-radiation environments, and there is room for improvement. Summary of the Invention [Problem to be solved by the invention]

[0003] The problem that the present invention aims to improve or solve is to provide a radiation-resistant light-emitting diode lamp module in response to the shortcomings of the prior art. [Means for solving the problem]

[0004] To improve or solve the above problems, one technical solution adopted by the present invention provides a radiation-hard light-emitting diode lamp module including an illumination light-generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure. The illumination light-generating structure includes a circuit board and a plurality of light-emitting diode elements mounted on the circuit board. The top radiation-resistant structure includes a top radiation-resistant element mounted above the illumination light-generating structure. The radiation-resistant light-transmitting structure includes a first radiation-hard light-transmitting element mounted above the illumination light-generating structure and a second radiation-hard light-transmitting element mounted above the first radiation-hard light-transmitting element. The bottom radiation-resistant structure includes a bottom radiation-hard element mounted below the illumination light-generating structure. The surrounding radiation-hard structure includes a surrounding radiation-hard element mounted around the illumination light-generating structure. The radiation-resistant light-transmitting structure is configured to be separated from the illumination light-generating structure, and the bottom radiation-resistant structure is configured to be in contact with a circuit board of the illumination light-generating structure, the first radiation-resistant light-transmitting element is configured as a first lead-containing light-transmitting element or a first boron-containing light-transmitting element removably disposed above the illumination light-generating structure, and the second radiation-resistant light-transmitting element is configured as a second lead-containing light-transmitting element or a second boron-containing light-transmitting element removably disposed above the illumination light-generating structure, and the illumination light-generating structure is completely covered by the top radiation-resistant element, the first radiation-resistant light-transmitting element, the bottom radiation-resistant element, and the surrounding radiation-resistant element.

[0005] To improve or solve the above problems, another technical solution adopted by the present invention provides a radiation-hard light-emitting diode lamp module including an illumination light-generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure. The illumination light-generating structure includes a circuit board and a plurality of light-emitting diode elements mounted on the circuit board. The top radiation-resistant structure includes a top radiation-resistant element mounted above the illumination light-generating structure. The radiation-resistant light-transmitting structure includes a first radiation-hard light-transmitting element mounted above the illumination light-generating structure and a second radiation-hard light-transmitting element mounted above the first radiation-hard light-transmitting element. The bottom radiation-resistant structure includes a bottom radiation-hard element mounted below the illumination light-generating structure. The surrounding radiation-hard structure includes a surrounding radiation-hard element mounted around the illumination light-generating structure. The first radiation-resistant light-transmitting element is configured as a first lead-containing light-transmitting element or a first boron-containing light-transmitting element removably mounted above the illumination light-generating structure, and the second radiation-resistant light-transmitting element is configured as a second lead-containing light-transmitting element or a second boron-containing light-transmitting element removably mounted above the illumination light-generating structure.

[0006] To improve or solve the above problems, another technical solution adopted by the present invention provides a radiation-hard light-emitting diode lamp module including an illumination light-generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure. The illumination light-generating structure includes a circuit board and a plurality of light-emitting diode elements mounted on the circuit board. The top radiation-resistant structure includes a top radiation-resistant element mounted above the illumination light-generating structure. The radiation-resistant light-transmitting structure includes a first radiation-hard light-transmitting element mounted above the illumination light-generating structure and a second radiation-hard light-transmitting element mounted above the first radiation-hard light-transmitting element. The bottom radiation-resistant structure includes a bottom radiation-hard element mounted below the illumination light-generating structure. The surrounding radiation-hard structure includes a surrounding radiation-hard element mounted around the illumination light-generating structure. The illumination light-generating structure is completely covered by a top radiation-hard element, a first radiation-hard light-transmitting element, a bottom radiation-hard element, and a surrounding radiation-hard element. [Effects of the Invention]

[0007] One of the beneficial effects of the present invention is that the radiation-hard LED lamp module provided by the present invention can be used to mitigate radiation damage that the illumination light-generating structure may suffer in a high-radiation environment by using technical solutions such as "the top radiation-hard structure includes a top radiation-hard element located above the illumination light-generating structure," "the radiation-hard light-transmitting structure includes a first radiation-hard light-transmitting element located above the illumination light-generating structure and a second radiation-hard light-transmitting element located above the first radiation-hard light-transmitting element," "the bottom radiation-hard structure includes a bottom radiation-hard element located below the illumination light-generating structure," and "the surrounding radiation-hard structure includes surrounding radiation-hard elements located around the illumination light-generating structure." [Brief explanation of the drawings]

[0008] [Figure 1] 1 is an exploded perspective view of a radiation-resistant LED lamp module according to a first embodiment of the present invention; [Figure 2] 1 is a partial perspective exploded view of a radiation-resistant LED lamp module according to a first embodiment of the present invention; [Figure 3] 2 is another partial perspective exploded view of the radiation-resistant LED lamp module in accordance with the first embodiment of the present invention; FIG. [Figure 4] 1 is a perspective assembly diagram of a radiation-resistant LED lamp module in accordance with a first embodiment of the present invention; [Figure 5] Schematic cross-sectional view along VV in Figure 4. [Figure 6] An enlarged schematic diagram of part VI in Figure 5. [Figure 7] 1 is a schematic diagram illustrating the mutual structural relationship between a first radiation-resistant light-transmitting element and a second radiation-resistant light-transmitting element in a radiation-resistant light-transmitting structure according to a first embodiment of the present invention; [Figure 8] 1 is a schematic diagram of a radiation-resistant LED lamp module according to a first embodiment of the present invention removably and movably installed on a ceiling support structure; [Figure 9]10 is a schematic diagram illustrating the mutual structural relationship between the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element of the radiation-resistant light-transmitting structure according to the second embodiment of the present invention; FIG. [Figure 10] 10 is a schematic diagram illustrating the mutual structural relationship between the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element of the radiation-resistant light-transmitting structure according to the third embodiment of the present invention; FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] In order to better understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided description and drawings are for reference and explanation only and are not intended to limit the present invention.

[0010] The following describes the implementation of the "radiation-resistant light-emitting diode lamp module" according to the present invention through specific embodiments, so that those skilled in the art can understand the advantages and benefits of the present invention based on the content disclosed herein. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details herein based on different perspectives and applications, without departing from the concept of the present invention. Please note in advance that the accompanying drawings of the present invention are for simple schematic illustrations and are not drawn to scale. The technical content of the present invention will be described in more detail based on the following embodiments, but the disclosed content does not limit the scope of protection of the present invention. Furthermore, the term "or" used in this specification may include any one or more combinations of the relevant listed items according to actual circumstances.

[0011] 1 to 10 , the present invention provides a radiation-hard light-emitting diode lamp module M, which may include at least an illumination light-generating structure 1, a top radiation-resistant structure 2, a radiation-resistant light-transmitting structure 3, a bottom radiation-resistant structure 4, and a surrounding radiation-resistant structure 5. More specifically, the illumination light-generating structure 1 may include at least a circuit board 10 and a plurality of light-emitting diode elements 11 mounted on the circuit board 10, and the top radiation-resistant structure 2 may include at least a top radiation-resistant element 20 mounted above the illumination light-generating structure 1. Furthermore, the radiation-hard light-transmitting structure 3 may include at least a first radiation-hard light-transmitting element 31 mounted above the illumination light-generating structure 1 and a second radiation-hard light-transmitting element 32 mounted above the first radiation-hard light-transmitting element 31. Moreover, the bottom radiation-hard structure 4 may include at least a bottom radiation-hard element 40 disposed below the illumination light generating structure 1, and the surrounding radiation-hard structure 5 may include at least a surrounding radiation-hard element 50 disposed around the illumination light generating structure 1. It should be noted that the illumination light generating structure 1 is completely covered by the top radiation-hard element 20, the first radiation-hard light-transmitting element 31, the bottom radiation-hard element 40, and the surrounding radiation-hard element 50, thereby reducing radiation damage that the illumination light generating structure 1 may suffer in a high radiation environment. [Example]

[0012] [First Example] Referring to Figures 1 to 8, the radiation-resistant light-emitting diode lamp module M (or radiation-resistant light-emitting diode lamp module) provided by the first embodiment of the present invention may include at least an illumination light-generating structure 1 (or light source-providing structure), a top radiation-resistant structure 2, a radiation-resistant light-transmitting structure 3, a bottom radiation-resistant structure 4, and a surrounding radiation-resistant structure 5.

[0013] 2, 5, and 6, the illumination light-generating structure 1 may include at least a circuit board 10 and a plurality of light-emitting diode elements 11, which may be mounted on the circuit board 10 and electrically connected to the circuit board 10. For example, the plurality of light-emitting diode elements 11 may be configured as a plurality of AC light-emitting diode chips (e.g., each AC light-emitting diode chip may be an unpackaged bare chip or bare die, or a packaged chip), and the plurality of light-emitting diode elements 11 may be packaged with silicone resin or epoxy resin. It should be noted that the illumination light-generating structure 1 may further include a plurality of electronic elements 12 and a radiation-resistant insulating cover body 13. Furthermore, a plurality of electronic components 12 may be mounted on the circuit board 10 and electrically connected to the circuit board 10. Each electronic component 12 may be configured as any one of a capacitor component (e.g., a conventional capacitor or a chip capacitor), an inductor (e.g., a conventional inductor or a chip inductor), a resistor component (e.g., a conventional resistor component or a chip resistor component), a current limiting component (e.g., a conventional current limiter or a chip current limiter), and a rectifying component (e.g., a conventional rectifier or a chip rectifier), or any other type of electronic component or chip. A radiation-resistant insulating cover body 13 may be mounted on the circuit board 10 to cover the plurality of electronic components 12. The radiation-resistant insulating cover body 13 may be configured as a titanium-containing insulating cover body (e.g., a titanium-containing insulating package that may include at least PBT and titanium dioxide) or a metal-containing insulating cover body. However, the above example is merely one possible embodiment and is not intended to limit the scope of the present invention.

[0014] 2, 5, and 6, the top radiation-hard structure 2 may include at least a top radiation-hard element 20, which may be installed above the illumination light-generating structure 1. For example, the top radiation-hard element 20 may be configured as a lead-containing surrounding cover plate (or a metal-containing surrounding cover plate), which may be removably installed on the radiation-hard insulating cover body 13 of the illumination light-generating structure 1 by a plurality of screws. The top radiation-hard element 20 may have through openings 2000 for exposing the plurality of light-emitting diode elements 11, and the through openings 2000 provided by the top radiation-hard element 20 correspond to the plurality of light-emitting diode elements 11, allowing the plurality of light-emitting diode elements 11 to be exposed. Also, according to different needs, the thickness of the top radiation-hard element 20 may be in the range of 1000 μm to 5000 μm (for example, any positive integer in the range of 1000 μm to 5000 μm). However, the above example is merely one of possible embodiments and is not intended to limit the present invention.

[0015] 1, 2, 5, and 6, the radiation-resistant light-transmitting structure 3 may include at least a first radiation-resistant light-transmitting element 31 and a second radiation-resistant light-transmitting element 32, where the first radiation-resistant light-transmitting element 31 may be disposed above the illumination light generating structure 1, and the second radiation-resistant light-transmitting element 32 may be disposed above the first radiation-resistant light-transmitting element 31. For example, the radiation-resistant light-transmitting structure 3 may be configured to be separated from the illumination light generating structure 1 by a predetermined distance, and the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 may be configured to be separated from each other by a predetermined distance D (as shown in FIG. 7). Furthermore, the first radiation-resistant light-transmitting element 31 can be configured as a first lead-containing light-transmitting element (or a metal-containing light-transmitting element) or a first boron-containing light-transmitting element (or a non-metal-containing light-transmitting element) removably installed above the illumination light generating structure 1, and the second radiation-resistant light-transmitting element 32 can be configured as a second lead-containing light-transmitting element (or a metal-containing light-transmitting element) or a second boron-containing light-transmitting element (or a non-metal-containing light-transmitting element) removably installed above the illumination light generating structure 1. The first radiation-resistant light-transmitting element 31 can be configured as a first radiation-resistant light-transmitting plate without a through-hole (or a first aperture-free radiation-resistant light-transmitting plate), and the second radiation-resistant light-transmitting element 32 can be configured as a second radiation-resistant light-transmitting plate without a through-hole (or a second aperture-free radiation-resistant light-transmitting plate). Furthermore, according to different needs, the thickness of the first radiation-resistant light-transmitting element 31 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm), and the thickness of the second radiation-resistant light-transmitting element 32 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm). It should be noted that the first radiation-resistant light-transmitting element 31 may be removably disposed above the illumination light-generating structure 1 by being positionally restricted and fixed by the first positioning structure 6, and the second radiation-resistant light-transmitting element 32 may be removably disposed above the first radiation-resistant light-transmitting element 31 by being positionally restricted and fixed by the second positioning structure 7.However, the above example is merely one possible embodiment and is not intended to limit the present invention.

[0016] 2, 5, and 6, the bottom radiation-hard structure 4 may include at least a bottom radiation-hard element 40, which may be disposed below the illumination light-generating structure 1. For example, the bottom radiation-hard structure 4 may be configured to be in contact (directly or indirectly) with the circuit board 10 of the illumination light-generating structure 1. The bottom radiation-hard element 40 may be configured as a radiation-hard heat-dissipating element (or a metal heat-dissipating element), which may be in detachable contact (directly or indirectly) with the circuit board 10. According to different needs, the thickness of the bottom radiation-hard element 40 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm). However, the above example is merely one possible embodiment and does not limit the present invention.

[0017] 2, 5, and 6, the surrounding radiation-hard structure 5 may include at least a surrounding radiation-hard element 50, which may be disposed around the illumination light-generating structure 1. For example, the surrounding radiation-hard element 50 may be configured as a tungsten-containing surrounding cover (or a metal-containing surrounding cover), which may detachably surround the top radiation-hard element 20, the illumination light-generating structure 1, and the bottom radiation-hard element 40. According to different needs, the thickness of the surrounding radiation-hard element 50 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm). It should be noted that the surrounding radiation-hard element 50 may be a complete and continuous surrounding element, or the surrounding radiation-hard element 50 may have a groove or slot for passing electrical wires through. However, the above example is merely one possible embodiment and is not intended to limit the present invention.

[0018] It should be noted that, for example, as shown in FIGS. 2, 5, 6, and 7 , when the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 are configured to be separated from each other by a predetermined distance D (i.e., the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 may be two optical components independent of each other), the radiation-resistant light-emitting diode lamp module M may further include a light-reflecting cover structure 8, which may be disposed between the top radiation-resistant element 20 and the first radiation-resistant light-transmitting element 31. Furthermore, the light-reflecting cover structure 8 may include at least a carrier base 81 (or a carrier substrate) and a plurality of light-reflecting elements 82, where the carrier base 81 may be installed on the top radiation-hard element 20, the carrier base 81 having through-openings 8100 used to expose the plurality of light-emitting diode elements 11, and the plurality of light-reflecting elements 82 may be connected to the carrier base 81 in a surrounding manner (or the plurality of light-reflecting elements 82 may be connected to each other in order to surround the carrier base 81). Also, the top radiation-hard element 20 may be configured to support the carrier base 81, and the carrier base 81 may be configured to support the first radiation-hard light-transmitting element 31. It should be noted that in a possible embodiment, when the first radiation-hard light-transmitting element 31 can be configured as a first lead-containing light-transmitting element, the first lead-containing light-transmitting element can be configured as a first lead-containing glass plate or a first lead-containing plastic plate removably installed on the carrier base 81. In one possible embodiment, when the first radiation-resistant light-transmitting element 31 can be configured as a first boron-containing light-transmitting element, the first boron-containing light-transmitting element can be configured as a first boron-containing glass plate or a first boron-containing plastic plate removably mounted on the carrier base 81. However, the above example is merely one possible embodiment and does not limit the present invention.

[0019] It should be noted that, for example, as shown in Figures 1, 3, 5, and 6, the radiation-resistant light-emitting diode lamp module M may further include a radiation-resistant lamp support structure 9, and the radiation-resistant lamp support structure 9 may include at least a lamp housing 91, a stainless steel carrier 92, a graphite-containing substrate 93, and an aluminum-containing substrate 94, wherein the stainless steel carrier 92 can be removably installed on the lamp housing 91, the graphite-containing substrate 93 can be removably installed in the lamp housing 91, and the aluminum-containing substrate 94 can be removably installed on the graphite-containing substrate 93, and the aluminum-containing substrate 94 can be configured to support the bottom radiation-resistant element 40 and the surrounding radiation-resistant element 50. Furthermore, according to different needs, the thickness of stainless steel carrier 92 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm), the thickness of graphite-containing substrate 93 may be in the range of 1000 μm to 5000 μm (e.g., any positive integer in the range of 1000 μm to 5000 μm), and the thickness of aluminum-containing substrate 94 may be in the range of 3000 μm to 7000 μm (e.g., any positive integer in the range of 3000 μm to 7000 μm). It should be noted that in a possible embodiment, when second radiation-resistant light-transmitting element 32 can be configured as a second lead-containing light-transmitting element, the second lead-containing light-transmitting element can be configured as a second lead-containing glass plate or a second lead-containing plastic plate removably installed on lamp housing 91. In one possible embodiment, when second radiation-resistant light-transmitting element 32 is configured as a second boron-containing light-transmitting element, the second boron-containing light-transmitting element can be configured as a second boron-containing glass plate or a second boron-containing plastic plate removably installed on lamp housing 91. However, the above example is merely one possible embodiment and is not intended to limit the present invention.

[0020] It should be noted that, for example, as shown in Figures 4 and 8, the lamp housing 91 can be removably and movably installed on the ceiling support structure S, so that the installation angle of the radiation-resistant light-emitting diode lamp module M can be adjusted relative to the ceiling support structure S. Thus, in one possible embodiment, when the radiation-hard light-emitting diode lamp module M is mounted by the ceiling support structure S in a high radiation environment (for example, in an electromagnetic wave environment having X-rays or gamma rays, or in a particle radiation environment having alpha rays, beta rays, or neutron radiation), the illumination light-generating structure 1 can be completely covered by at least the top radiation-hard element 20, the first radiation-hard light-transmitting element 31, the bottom radiation-hard element 40, and the surrounding radiation-hard element 50 (or the second radiation-hard light-transmitting element 32, the light-reflective cover structure 8, and the radiation-hard auxiliary members of the radiation-hard lamp support structure 9 may be further combined), thereby effectively reducing radiation damage that the illumination light-generating structure 1 may suffer in the high radiation environment. However, the above example is merely one possible embodiment and is not intended to limit the present invention.

[0021] It should be noted that, for example, as shown in FIGS. 1, 4, and 8, the outer peripheral region of the second radiation-resistant light-transmitting element 32 may be configured to provide radiation-resistant level information (e.g., different colors or different patterns represent different radiation absorption doses, thereby improving the level identification of the radiation-resistant light-emitting diode lamp module M). Therefore, even if the radiation-resistant light-emitting diode lamp module M has already been mounted in a high-radiation environment by the ceiling support structure S, a user can obtain or understand the radiation-resistant level of the radiation-resistant light-emitting diode lamp module M from the radiation-resistant level information (e.g., the radiation absorption dose may be 156 kGy or 312 kGy) provided by the outer peripheral region of the second radiation-resistant light-transmitting element 32. However, the above example is merely one possible embodiment and does not limit the present invention.

[0022] It should be noted that, for example, as shown in FIGS. 5 and 6 , when each light-emitting diode element 11 is vertically projected, it can be completely contained on the first radiation-hard light-transmitting element 31 and the bottom radiation-hard structure 4 (i.e., a plurality of light-emitting diode elements 11 can be simultaneously disposed so as to correspond to both the first radiation-hard light-transmitting element 31 and the bottom radiation-hard structure 4, and the horizontal distribution area of ​​the plurality of light-emitting diode elements 11 is smaller than the horizontal distribution area of ​​the first radiation-hard light-transmitting element 31 or the horizontal distribution area of ​​the bottom radiation-hard structure 4), and when each electronic element 12 is vertically projected, it can be completely contained on the top radiation-hard element 20 and the bottom radiation-hard structure 4 (i.e., a plurality of electronic elements 12 can simultaneously be disposed so as to correspond to both the top radiation-hard element 20 and the bottom radiation-hard structure 4, and the horizontal distribution area of ​​the plurality of electronic elements 12 is smaller than the horizontal distribution area of ​​the top radiation-hard element 20 or the horizontal distribution area of ​​the bottom radiation-hard structure 4). However, the above example is merely one possible embodiment and is not intended to limit the present invention.

[0023] It should be noted that, for example, as shown in Figures 5, 6 and 8, when the radiation-hard light-emitting diode lamp module M is mounted in a high radiation environment by a ceiling support structure S, when the plurality of light-emitting diode elements 11 can be configured to generate an illumination beam (or illumination source), the illumination beam generated by the plurality of light-emitting diode elements 11 can provide the illumination source required by a user by passing through the through-opening 2000 of the top radiation-hard element 20, the through-opening 8100 of the carrier base 81, the first radiation-hard light-transmitting element 31, and the second radiation-hard light-transmitting element 32 in this order. However, the above example is merely one of possible embodiments and does not limit the present invention.

[0024] [Second Example] 9, the radiation-resistant light-transmitting structure 3 provided in the second embodiment of the present invention can be applied to a radiation-resistant light-emitting diode lamp module. Comparing FIG. 9 with FIG. 7, the most significant difference between the second embodiment and the first embodiment of the present invention is that in the second embodiment, the second radiation-resistant light-transmitting element 32 is positioned on the first radiation-resistant light-transmitting element 31 by the adhesive layer H, and the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 are bonded together into a single optical component by the adhesive layer H. For example, depending on different needs, the radiation-resistant light-emitting diode lamp module M provided in the first embodiment can selectively employ the radiation-resistant light-transmitting structure 3 provided in the first embodiment (as shown in FIG. 7) or the radiation-resistant light-transmitting structure 3 provided in the second embodiment (as shown in FIG. 9).

[0025] [Third Example] Referring to FIG. 10, the radiation-resistant light-transmitting structure 3 provided in the third embodiment of the present invention can be applied to a radiation-resistant light-emitting diode lamp module. Comparing FIG. 10 with FIG. 7 (or comparing FIG. 10 with FIG. 9 ) reveals that the main difference between the third embodiment of the present invention and the first embodiment (or second embodiment) is that in the third embodiment, the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 can be stacked or directly contacted with each other (i.e., the first radiation-resistant light-transmitting element 31 and the second radiation-resistant light-transmitting element 32 can be two independent optical components). For example, depending on different needs, the radiation-resistant light-emitting diode lamp module M provided in the first embodiment can selectively employ the radiation-resistant light-transmitting structure 3 provided in the first embodiment (as shown in FIG. 7 ), the radiation-resistant light-transmitting structure 3 provided in the second embodiment (as shown in FIG. 9 ), or the radiation-resistant light-transmitting structure 3 provided in the third embodiment (as shown in FIG. 10 ). [Industrial Applicability]

[0026] [Beneficial Effects of Examples] One of the beneficial effects of the present invention is that the radiation-hard LED lamp module provided by the present invention can reduce radiation damage that the illumination light-generating structure 1 may suffer in a high-radiation environment due to the technical features such as "the top radiation-hard structure 2 may at least include a top radiation-hard element 20 located above the illumination light-generating structure 1," "the radiation-hard light-transmitting structure 3 may at least include a first radiation-hard light-transmitting element 31 located above the illumination light-generating structure 1 and a second radiation-hard light-transmitting element 32 located above the first radiation-hard light-transmitting element 31," "the bottom radiation-hard structure 4 may at least include a bottom radiation-hard element 40 located below the illumination light-generating structure 1," and "the surrounding radiation-hard structure 5 may at least include a surrounding radiation-hard element 50 located around the illumination light-generating structure 1."

[0027] The above disclosure is merely a preferred embodiment of the present invention, and the scope of the claims of the present invention is not limited thereto. Therefore, all equivalent technical modifications made by utilizing the contents of the specification and drawings of the present invention are included in the scope of the claims of the present invention. [Explanation of symbols]

[0028] M...Radiation-resistant light-emitting diode lamp module 1...Illumination light generation structure 10...Circuit board 11...Light-emitting diode element 12...Electronic element 13...Radiation-resistant insulating cover body 2…Top radiation resistant structure 20…Top radiation-resistant element 2000...Through opening 3…Radiation-resistant transparent structure 31...First radiation-resistant light-transmitting element 32... Second radiation-resistant light-transmitting element 4…Bottom radiation resistant structure 40…Bottom radiation-resistant element 5…Ambient radiation resistant structure 50…Ambient radiation resistant element 6...First position limiting structure 7...Second position limiting structure 8...Light reflective cover structure 81...Career-based 8100...Through opening 82...Light reflecting element 9…Radiation-resistant lamp support structure 91...Lamp housing 92...Stainless steel carrier 93...Graphite-containing substrate 94...Aluminum-containing substrate S...Ceiling support structure H…adhesive layer D...Predetermined distance

Claims

1. an illumination light generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure; the illumination light generating structure includes a circuit board and a plurality of light emitting diode elements disposed on the circuit board; the top radiation-hard structure includes a top radiation-hard element located above the illumination light-generating structure; the radiation-resistant light-transmitting structure includes a first radiation-resistant light-transmitting element disposed above the illumination light generating structure and a second radiation-resistant light-transmitting element disposed above the first radiation-resistant light-transmitting element; the bottom radiation-hard structure includes a bottom radiation-hard element located below the illumination light-generating structure; the surrounding radiation-hard structure includes a surrounding radiation-hard element disposed around the illumination light-generating structure; the radiation-resistant light-transmitting structure is configured to be separated from the illumination light-generating structure, and the bottom radiation-resistant structure is configured to contact the circuit board of the illumination light-generating structure; the first radiation-resistant light-transmitting element is configured as a first lead-containing light-transmitting element or a first boron-containing light-transmitting element removably disposed above the illumination light-generating structure, and the second radiation-resistant light-transmitting element is configured as a second lead-containing light-transmitting element or a second boron-containing light-transmitting element removably disposed above the illumination light-generating structure; a radiation-hard light-emitting diode lamp module, wherein the illumination light-producing structure is completely covered by the top radiation-hard element, the first radiation-hard light-transmitting element, the bottom radiation-hard element, and the surrounding radiation-hard element;

2. the illumination light-generating structure further includes: a plurality of electronic elements mounted on the circuit board; and a radiation-resistant insulating cover body mounted on the circuit board and covering the plurality of electronic elements; each of the light-emitting diode elements is configured as an AC light-emitting diode chip; each of the electronic elements is configured as one of a capacitor element, an inductor element, a resistor element, a current-limiting element, and a rectifier element; and the radiation-resistant insulating cover body is configured as a titanium-containing insulating cover body; a vertical projection of each of the light-emitting diode elements is located entirely on the first radiation-hard light-transmitting element and the bottom radiation-hard structure, and a vertical projection of each of the electronic elements is located entirely on the top radiation-hard element and the bottom radiation-hard structure; the first radiation-resistant light-transmitting element is removably mounted on a carrier base, and the second radiation-resistant light-transmitting element is removably mounted on a lamp housing; When the first radiation-resistant light-transmitting element is configured as the first lead-containing light-transmitting element, the first lead-containing light-transmitting element is configured as a first lead-containing glass plate or a first lead-containing plastic plate removably installed on the carrier base; when the first radiation-resistant light-transmitting element is configured as the first boron-containing light-transmitting element, the first boron-containing light-transmitting element is configured as a first boron-containing glass plate or a first boron-containing plastic plate removably mounted on the carrier base; When the second radiation-resistant light-transmitting element is configured as the second lead-containing light-transmitting element, the second lead-containing light-transmitting element is configured as a second lead-containing glass plate or a second lead-containing plastic plate removably installed on the lamp housing; When the second radiation-resistant light-transmitting element is configured as the second boron-containing light-transmitting element, the second boron-containing light-transmitting element is configured as a second boron-containing glass plate or a second boron-containing plastic plate removably installed on the lamp housing; the first radiation-resistant light-transmitting element is configured as a first radiation-resistant light-transmitting plate having no through-holes, and the second radiation-resistant light-transmitting element is configured as a second radiation-resistant light-transmitting plate having no through-holes; the first radiation-resistant light-transmitting element is removably positioned above the illumination light-generating structure by a first position-limiting structure, and the second radiation-resistant light-transmitting element is removably positioned above the first radiation-resistant light-transmitting element by a second position-limiting structure; 10. The radiation-hard light-emitting diode lamp module of claim 1, wherein a peripheral region of the second radiation-hard light-transmitting element is configured to provide radiation-hardness level information.

3. the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element are configured to be separated from each other by a predetermined distance or are stacked on each other; When the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element are configured to be separated from each other by the predetermined distance, the radiation-resistant light-emitting diode lamp module further includes a light-reflecting cover structure, the light-reflecting cover structure being disposed between the top radiation-resistant element and the first radiation-resistant light-transmitting element; the light-reflecting cover structure includes a carrier base disposed on the top radiation-hard element, and a plurality of light-reflecting elements connected to the carrier base so as to surround the carrier base, the plurality of light-reflecting elements being connected in sequence to surround the carrier base; the top radiation-hard element is configured to support the carrier base, and the carrier base is configured to support the first radiation-hard light-transmitting element; the top radiation-resistant element has through openings for exposing the plurality of light-emitting diode elements, the carrier base has through openings for exposing the plurality of light-emitting diode elements; 2. The radiation-hard light-emitting diode lamp module of claim 1, wherein when the plurality of light-emitting diode elements are configured to generate an illumination beam, the illumination beam generated by the plurality of light-emitting diode elements passes through the through opening of the top radiation-hard element, the through opening of the carrier base, the first radiation-hard light-transmitting element, and the second radiation-hard light-transmitting element, in that order.

4. The radiation-resistant light-emitting diode lamp module further includes a radiation-resistant lamp support structure, the radiation-resistant lamp support structure including a lamp housing, a stainless steel carrier removably mounted on the lamp housing, a graphite-containing substrate removably mounted in the lamp housing, and an aluminum-containing substrate removably mounted on the graphite-containing substrate; the lamp housing is removably and movably mounted on a ceiling support structure, the aluminum-containing substrate is configured to support the bottom radiation-hard element and the surrounding radiation-hard element; the top radiation-hard element is configured as a lead-containing surrounding cover plate removably placed on the illumination light-generating structure, the bottom radiation-hard element is configured as a radiation-hard heat-dissipating element removably contacting the circuit board, and the surrounding radiation-hard element is configured as a tungsten-containing surrounding cover plate removably surrounding the top radiation-hard element, the illumination light-generating structure, and the bottom radiation-hard element; 2. The radiation-hard light-emitting diode lamp module according to claim 1, wherein the thickness of the top radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the first radiation-hard light-transmitting element is in the range of 1000 μm to 5000 μm, the thickness of the second radiation-hard light-transmitting element is in the range of 1000 μm to 5000 μm, the thickness of the bottom radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the surrounding radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the stainless steel carrier is in the range of 1000 μm to 5000 μm, the thickness of the graphite-containing substrate is in the range of 1000 μm to 5000 μm, and the thickness of the aluminum-containing substrate is in the range of 3000 μm to 7000 μm.

5. an illumination light generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure; the illumination light generating structure includes a circuit board and a plurality of light emitting diode elements disposed on the circuit board; the top radiation-hard structure includes a top radiation-hard element located above the illumination light-generating structure; the radiation-resistant light-transmitting structure includes a first radiation-resistant light-transmitting element disposed above the illumination light generating structure and a second radiation-resistant light-transmitting element disposed above the first radiation-resistant light-transmitting element; the bottom radiation-hard structure includes a bottom radiation-hard element located below the illumination light-generating structure; the surrounding radiation-hard structure includes a surrounding radiation-hard element disposed around the illumination light-generating structure; a radiation-hard light-emitting diode lamp module, wherein the first radiation-hard light-transmitting element is configured as a first lead-containing light-transmitting element or a first boron-containing light-transmitting element removably mounted above the illumination light-generating structure, and the second radiation-hard light-transmitting element is configured as a second lead-containing light-transmitting element or a second boron-containing light-transmitting element removably mounted above the illumination light-generating structure.

6. the illumination light-generating structure further includes: a plurality of electronic elements mounted on the circuit board; and a radiation-resistant insulating cover body mounted on the circuit board and covering the plurality of electronic elements; each of the light-emitting diode elements is configured as an AC light-emitting diode chip; each of the electronic elements is configured as one of a capacitor element, an inductor element, a resistor element, a current-limiting element, and a rectifier element; and the radiation-resistant insulating cover body is configured as a titanium-containing insulating cover body; a vertical projection of each of the light-emitting diode elements is located entirely on the first radiation-hard light-transmitting element and the bottom radiation-hard structure, and a vertical projection of each of the electronic elements is located entirely on the top radiation-hard element and the bottom radiation-hard structure; the first radiation-resistant light-transmitting element is removably mounted on a carrier base, and the second radiation-resistant light-transmitting element is removably mounted on a lamp housing; When the first radiation-resistant light-transmitting element is configured as the first lead-containing light-transmitting element, the first lead-containing light-transmitting element is configured as a first lead-containing glass plate or a first lead-containing plastic plate removably installed on the carrier base; when the first radiation-resistant light-transmitting element is configured as the first boron-containing light-transmitting element, the first boron-containing light-transmitting element is configured as a first boron-containing glass plate or a first boron-containing plastic plate removably mounted on the carrier base; When the second radiation-resistant light-transmitting element is configured as the second lead-containing light-transmitting element, the second lead-containing light-transmitting element is configured as a second lead-containing glass plate or a second lead-containing plastic plate removably installed on the lamp housing; When the second radiation-resistant light-transmitting element is configured as the second boron-containing light-transmitting element, the second boron-containing light-transmitting element is configured as a second boron-containing glass plate or a second boron-containing plastic plate removably installed on the lamp housing; the first radiation-resistant light-transmitting element is configured as a first radiation-resistant light-transmitting plate having no through-holes, and the second radiation-resistant light-transmitting element is configured as a second radiation-resistant light-transmitting plate having no through-holes; the first radiation-resistant light-transmitting element is removably positioned above the illumination light-generating structure by a first position-limiting structure, and the second radiation-resistant light-transmitting element is removably positioned above the first radiation-resistant light-transmitting element by a second position-limiting structure; 6. The radiation-hard light-emitting diode lamp module of claim 5, wherein a peripheral region of the second radiation-hard light-transmitting element is configured to provide radiation-hardness level information.

7. the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element are configured to be separated from each other by a predetermined distance or are stacked on each other; When the first radiation-resistant light-transmitting element and the second radiation-resistant light-transmitting element are configured to be separated from each other by the predetermined distance, the radiation-resistant light-emitting diode lamp module further includes a light-reflecting cover structure, the light-reflecting cover structure being disposed between the top radiation-resistant element and the first radiation-resistant light-transmitting element; the light-reflecting cover structure includes a carrier base disposed on the top radiation-hard element, and a plurality of light-reflecting elements connected to the carrier base so as to surround the carrier base, the plurality of light-reflecting elements being connected in sequence to surround the carrier base; the top radiation-hard element is configured to support the carrier base, and the carrier base is configured to support the first radiation-hard light-transmitting element; the top radiation-resistant element has through openings for exposing the plurality of light-emitting diode elements, the carrier base has through openings for exposing the plurality of light-emitting diode elements; 6. The radiation-hard light-emitting diode lamp module of claim 5, wherein when the plurality of light-emitting diode elements are configured to generate an illumination beam, the illumination beam generated by the plurality of light-emitting diode elements passes through the through opening of the top radiation-hard element, the through opening of the carrier base, the first radiation-hard light-transmitting element, and the second radiation-hard light-transmitting element, in that order.

8. The radiation-resistant light-emitting diode lamp module further includes a radiation-resistant lamp support structure, the radiation-resistant lamp support structure including a lamp housing, a stainless steel carrier removably mounted on the lamp housing, a graphite-containing substrate removably mounted in the lamp housing, and an aluminum-containing substrate removably mounted on the graphite-containing substrate; the lamp housing is removably and movably mounted on a ceiling support structure, the aluminum-containing substrate is configured to support the bottom radiation-hard element and the surrounding radiation-hard element; the top radiation-hard element is configured as a lead-containing surrounding cover plate removably placed on the illumination light-generating structure, the bottom radiation-hard element is configured as a radiation-hard heat-dissipating element removably contacting the circuit board, and the surrounding radiation-hard element is configured as a tungsten-containing surrounding cover plate removably surrounding the top radiation-hard element, the illumination light-generating structure, and the bottom radiation-hard element; 6. The radiation-hard light-emitting diode lamp module according to claim 5, wherein the thickness of the top radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the first radiation-hard light-transmitting element is in the range of 1000 μm to 5000 μm, the thickness of the second radiation-hard light-transmitting element is in the range of 1000 μm to 5000 μm, the thickness of the bottom radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the surrounding radiation-hard element is in the range of 1000 μm to 5000 μm, the thickness of the stainless steel carrier is in the range of 1000 μm to 5000 μm, the thickness of the graphite-containing substrate is in the range of 1000 μm to 5000 μm, and the thickness of the aluminum-containing substrate is in the range of 3000 μm to 7000 μm.

9. an illumination light generating structure, a top radiation-resistant structure, a radiation-resistant light-transmitting structure, a bottom radiation-resistant structure, and a surrounding radiation-resistant structure; the illumination light generating structure includes a circuit board and a plurality of light emitting diode elements disposed on the circuit board; the top radiation-hard structure includes a top radiation-hard element located above the illumination light-generating structure; the radiation-resistant light-transmitting structure includes a first radiation-resistant light-transmitting element disposed above the illumination light generating structure and a second radiation-resistant light-transmitting element disposed above the first radiation-resistant light-transmitting element; the bottom radiation-hard structure includes a bottom radiation-hard element located below the illumination light-generating structure; the surrounding radiation-hard structure includes a surrounding radiation-hard element disposed around the illumination light-generating structure; a radiation-hard light-emitting diode lamp module, wherein the illumination light-producing structure is completely covered by the top radiation-hard element, the first radiation-hard light-transmitting element, the bottom radiation-hard element, and the surrounding radiation-hard element;

10. the illumination light-generating structure further includes: a plurality of electronic elements mounted on the circuit board; and a radiation-resistant insulating cover body mounted on the circuit board and covering the plurality of electronic elements; a vertical projection of each of the light-emitting diode elements is located entirely on the first radiation-hard light-transmitting element and the bottom radiation-hard structure, and a vertical projection of each of the electronic elements is located entirely on the top radiation-hard element and the bottom radiation-hard structure; the first radiation-resistant light-transmitting element is configured as a first radiation-resistant light-transmitting plate having no through-holes, and the second radiation-resistant light-transmitting element is configured as a second radiation-resistant light-transmitting plate having no through-holes; the first radiation-resistant light-transmitting element is removably positioned above the illumination light-generating structure by a first position-limiting structure, and the second radiation-resistant light-transmitting element is removably positioned above the first radiation-resistant light-transmitting element by a second position-limiting structure; a circumferential region of the second radiation-hard light-transmitting element configured to provide radiation-hardness level information; The radiation-resistant light-emitting diode lamp module further includes a light-reflecting cover structure, the light-reflecting cover structure being disposed between the top radiation-resistant element and the first radiation-resistant light-transmitting element; the light-reflecting cover structure includes a carrier base disposed on the top radiation-hard element, and a plurality of light-reflecting elements connected to the carrier base so as to surround the carrier base, the plurality of light-reflecting elements being connected in sequence to surround the carrier base; The radiation-resistant light-emitting diode lamp module further includes a radiation-resistant lamp support structure, the radiation-resistant lamp support structure including a lamp housing, a stainless steel carrier removably mounted on the lamp housing, a graphite-containing substrate removably mounted in the lamp housing, and an aluminum-containing substrate removably mounted on the graphite-containing substrate; 10. The radiation-hard light-emitting diode lamp module of claim 9, wherein the top radiation-hard element is configured as a lead-containing surrounding cover plate removably placed on the illumination light-generating structure, the bottom radiation-hard element is configured as a radiation-hard heat-dissipating element removably contacting the circuit board, and the peripheral radiation-hard element is configured as a tungsten-containing surrounding cover plate removably surrounding the top radiation-hard element, the illumination light-generating structure, and the bottom radiation-hard element.

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