SUBSTRATE PROCESSING SYSTEM AND TEMPERATURE CONTROL METHOD FOR PLACEMENT TABLE

Abstract

To improve the accuracy of measuring a temperature by an infrared camera.SOLUTION: An infrared camera calibration method includes an acquisition step, a calibration value calculation step, an interpolation curve specification step, and a preservation step. In the acquisition step, the mounting table on which a substrate is mounted is set at a plurality of different temperatures, and the measured value of radiant quantity of infrared light from each of a plurality of areas on the top face of the mounting table is acquired by the infrared camera at respective temperatures. In the calibration value calculation step, a difference between measured values in a reference area which is an area where a temperature sensor is provided and measured values in other areas at the respective temperatures is calculated as a calibration value. In the interpolation curve specification step, an interpolation curve that indicates the tendency of a change of the calibration value to the measured value in the reference area is specified for the respective areas. In the preservation step, a parameter that defines the interpolation curve specified for the respective areas is preserved.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] Various aspects and embodiments of the present disclosure include: Substrate Processing System and Temperature control method for mounting table Regarding. [Background technology]

[0002] For example, the following Patent Document 1 discloses a method of creating a conversion table showing the correspondence between temperature and resistance value by setting an electrostatic chuck to different temperatures and measuring the resistance value of a heater disposed in each region of the electrostatic chuck at each temperature. The temperature of the electrostatic chuck is measured using an infrared (IR) camera. By referring to the created conversion table, the temperature of each region of the electrostatic chuck can be estimated from the resistance value of the heater disposed in each region. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-228230 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure can improve the accuracy of temperature measurement by an infrared camera. Substrate Processing System and Temperature control method for mounting table to provide. [Means for solving the problem]

[0005] One aspect of the present disclosure is a method for calibrating an infrared camera, including an acquisition step, a calibration value calculation step, an interpolation curve specification step, and a storage step. In the acquisition step, a mounting table on which a substrate is placed is set to a plurality of different temperatures, and at each temperature, an infrared camera acquires a measurement value of an amount of infrared radiation from each of a plurality of regions on an upper surface of the mounting table. In the calibration value calculation step, at each temperature, a difference between a measurement value in a reference region, which is a region in which a temperature sensor is provided, and a measurement value in another region is calculated as a calibration value. In the interpolation curve specification step, an interpolation curve indicating a tendency of change in the calibration value relative to the measurement value in the reference region is specified for each region. In the storage step, parameters defining the interpolation curve specified for each region are stored. Effect of the Invention

[0006] According to various aspects and embodiments of the present disclosure, it is possible to improve the accuracy of temperature measurement by an infrared camera. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a system configuration diagram showing an example of a processing system according to an embodiment of the present application. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus according to the first embodiment. [Diagram 3] FIG. 3 is a diagram showing an example of a manner in which the electrostatic chuck is divided into regions. [Figure 4] FIG. 4 is a block diagram showing an example of the configuration of the control device. [Diagram 5] FIG. 5 is a diagram illustrating an example of the conversion table. [Figure 6] FIG. 6 is a flowchart showing an example of the temperature control process. [Figure 7] FIG. 7 is a schematic cross-sectional view showing an example of the configuration of a processing device when creating a conversion table in the first embodiment. [Figure 8] FIG. 8 is a diagram showing an example of a zone photographed by an IR camera. [Figure 9]FIG. 9 is a flowchart showing an example of a calibration process of the IR camera. [Figure 10] FIG. 10 is a flowchart showing an example of the process in the acquisition step. [Figure 11] FIG. 11 is a flowchart showing an example of processing in the calibration value calculation step. [Figure 12] FIG. 12 is a diagram illustrating an example of the calibration value table. [Figure 13] FIG. 13 is a flowchart showing an example of processing in the interpolation curve specifying step. [Figure 14] FIG. 14 is a diagram for explaining an example of a process for specifying coefficients of an interpolation curve. [Figure 15] FIG. 15 is a diagram illustrating an example of the coefficient table. [Figure 16] FIG. 16 is a flowchart showing an example of the temperature measurement process. [Figure 17] FIG. 17 is a diagram showing an example of the measurement results of the temperature distribution in each zone in the comparative example. [Figure 18] FIG. 18 is a diagram showing an example of the measurement results of the temperature distribution in each zone. [Figure 19] FIG. 19 is a flowchart showing an example of a process for creating a conversion table. [Figure 20] FIG. 20 is a schematic cross-sectional view showing an example of the configuration of a processing device when creating a conversion table in the second embodiment. [Figure 21] FIG. 21 is a diagram showing an example of the arrangement of temperature sensors provided on a measurement substrate. [Figure 22] FIG. 22 is a diagram illustrating an example of a hardware configuration of the control device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The following is disclosed: Substrate Processing System and Temperature control method for mounting table The embodiments of the present invention will be described in detail with reference to the drawings. Substrate Processing System and Temperature control method for mounting tableHowever, the present invention is not limited to the above.

[0009] However, the temperature measurement value of an IR camera varies due to the influence of temperature changes and aging of the IR camera itself. In addition, there are individual differences in the temperature measurement value between different IR cameras. When the temperature measured by an IR camera varies, the accuracy of the conversion table showing the correspondence relationship between the heater resistance value and the temperature decreases. This reduces the accuracy of the temperature of each area estimated from the resistance value of the heater arranged in each area of ​​the electrostatic chuck.

[0010] Therefore, the present disclosure provides a technique that can improve the accuracy of temperature measurement by an infrared camera.

[0011] (First embodiment) [Configuration of processing system 10] Fig. 1 is a system configuration diagram showing an example of a processing system 10 according to an embodiment of the present application. For example, as shown in Fig. 1, the processing system 10 includes a processing device 100 and a control device 200. The processing device 100 performs an etching process using plasma on a substrate such as a semiconductor wafer. The control device 200 controls each part of the processing device 100 and causes the processing device 100 to perform a predetermined process on a substrate carried into the processing device 100.

[0012] [Configuration of processing device 100] Fig. 2 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus 100 according to the first embodiment. The processing apparatus 100 has a chamber 1 that is configured to be airtight, for example, as shown in Fig. 2. The chamber 1 is formed in a substantially cylindrical shape from, for example, aluminum whose surface is covered with an anodized coating. The chamber 1 is grounded.

[0013] A substrate 2a made of a conductive metal such as aluminum is provided in the chamber 1. The substrate 2a functions as a lower electrode. The substrate 2a is supported by a conductive support 4 provided on an insulating plate 3. An edge ring 5 made of, for example, single crystal silicon is provided on the upper outer periphery of the substrate 2a. The edge ring 5 is sometimes called a focus ring. A cylindrical inner wall member 3a made of, for example, quartz is provided around the substrate 2a and the support 4 so as to surround the substrate 2a and the support 4.

[0014] A shower head 16 having a function as an upper electrode is provided above the base material 2a so as to face the base material 2a in a substantially parallel manner, in other words, so as to face the substrate W arranged on the base material 2a. The shower head 16 and the base material 2a function as a pair of electrodes (upper electrode and lower electrode). A high-frequency power source 12a is connected to the base material 2a via a matching device 11a. A high-frequency power source 12b is connected to the base material 2a via a matching device 11b.

[0015] The high frequency power supply 12a supplies the base material 2a with high frequency power of a predetermined frequency (e.g., 100 MHz) used for generating plasma. The high frequency power supply 12b supplies the base material 2a with high frequency power of a predetermined frequency (e.g., 13 MHz) used for attracting ions (bias), which is lower than that of the high frequency power supply 12a. The on / off control of the high frequency power supplies 12a and 12b, as well as the high frequency power supplied by the high frequency power supplies 12a and 12b, are controlled by the control device 200.

[0016] An electrostatic chuck 6 for attracting and holding the substrate W and for heating the substrate W is provided on the upper surface of the base material 2a. The electrostatic chuck 6 has an insulator 6b, and an electrode 6a and a plurality of heaters 6c provided between the insulators 6b. The electrode 6a is connected to a DC power supply 13. The heater 6c is connected to a control device 200. The electrostatic chuck 6 generates a Coulomb force on the surface of the electrostatic chuck 6 by a DC voltage applied from the DC power supply 13, and the substrate W is attracted and held on the upper surface of the electrostatic chuck 6 by the Coulomb force. The on and off of the DC power supply 13 is controlled by the control device 200.

[0017] The electrostatic chuck 6 also heats the substrate W by a heater 6c heated by power supplied from the control device 200. The upper surface of the electrostatic chuck 6 is divided into a plurality of areas, and each of the areas is further divided into a plurality of zones. Each of the zones is provided with one heater 6c. The electrostatic chuck 6 and the substrate 2a are an example of a mounting table, and the upper surface of the electrostatic chuck 6 is an example of an upper surface of the mounting table.

[0018] Furthermore, a plurality of convex portions are formed on the upper surface of the electrostatic chuck 6, and the substrate W is supported by the plurality of convex portions. A heat transfer gas, which will be described later, is supplied between the plurality of convex portions.

[0019] A temperature sensor 7 for measuring the temperature of the electrostatic chuck 6 in each area is provided in the base material 2a below the respective areas in the electrostatic chuck 6. In this embodiment, the temperature sensor 7 is, for example, a fluorescent optical fiber thermometer. The temperature sensor 7 measures the temperature of the electrostatic chuck 6 from below the electrostatic chuck 6 and outputs the measured temperature to the control device 200.

[0020] A flow path 2b through which the heat medium flows is formed inside the base material 2a, and a chiller unit 33 that controls the temperature of the heat medium is connected to the flow path 2b via pipes 2c and 2d. The heat medium supplied from the chiller unit 33 circulates through the flow path 2b, thereby controlling the temperature of the base material 2a through heat exchange with the heat medium. The temperature of the heat medium supplied by the chiller unit 33 is controlled by the control device 200.

[0021] In addition, the base material 2a is provided with a pipe 32 penetrating the base material 2a for supplying a heat transfer gas (backside gas) such as helium gas between the electrostatic chuck 6 and the substrate W. The pipe 32 is connected to a heat transfer gas supply unit 31. The pressure of the heat transfer gas supplied from the heat transfer gas supply unit 31 through the pipe 32 to between the electrostatic chuck 6 and the substrate W is controlled by the control device 200.

[0022] By controlling the temperature of the heat medium flowing through the flow path 2b, the power supplied to each heater 6c in the electrostatic chuck 6, and the pressure of the heat transfer gas supplied between the electrostatic chuck 6 and the substrate W, the temperature of the substrate W on the electrostatic chuck 6 is controlled to be within a predetermined range.

[0023] The shower head 16 is provided at the top of the chamber 1. The shower head 16 includes a main body 16a and an upper top plate 16b, and is supported at the top of the chamber 1 via an insulating member 45. The main body 16a is formed, for example, from aluminum whose surface has been anodized, and detachably supports the upper top plate 16b at its bottom. The upper top plate 16b is formed, for example, from a silicon-containing material such as quartz.

[0024] A diffusion chamber 16c is formed inside the main body 16a. A number of gas outlets 16e are formed at the bottom of the main body 16a so as to be located at the lower part of the diffusion chamber 16c. A number of gas outlets 16f are provided in the upper top plate 16b so as to penetrate the upper top plate 16b in the thickness direction, and each of the gas outlets 16f is connected to the above-mentioned gas outlets 16e. With this configuration, the processing gas supplied to the diffusion chamber 16c diffuses in the diffusion chamber 16c and is supplied in a shower-like manner into the chamber 1 through each of the gas outlets 16e and the gas outlets 16f. The main body 16a and the like are provided with temperature regulators such as a heater (not shown) and piping (not shown) for circulating a heat medium, so that the shower head 16 can be controlled to a temperature within a desired range during processing of the substrate W.

[0025] The main body 16a is formed with a gas inlet 16g for introducing a processing gas into the diffusion chamber 16c. A processing gas supply source 15 is connected to the gas inlet 16g via a pipe 15b, and supplies a processing gas used for processing the substrate W. A valve V and a mass flow controller (MFC) 15a are provided on the pipe 15b. The processing gas supplied from the processing gas supply source 15 is supplied into the diffusion chamber 16c of the shower head 16 via the pipe 15b, and is supplied into the chamber 1 via the gas outlet 16e and the gas outlet 16f. The valve V and the MFC 15a are controlled by a controller 200.

[0026] A variable DC power supply 42 is electrically connected to the shower head 16 via a low pass filter (LPF) 40 and a switch 41. The switch 41 controls the supply and cut-off of a DC voltage from the variable DC power supply 42 to the shower head 16. The current and voltage of the variable DC power supply 42 and the on and off of the switch 41 are controlled by a control device 200. For example, when high frequency power is supplied from the high frequency power supplies 12a and 12b to the substrate 2a to generate plasma in the chamber 1, the control device 200 turns on the switch 41 as necessary, and a DC voltage of a predetermined magnitude is applied to the shower head 16.

[0027] An exhaust port 71 is formed at the bottom of the chamber 1. An exhaust device 73 is connected to the exhaust port 71 via an exhaust pipe 72. The exhaust device 73 has a vacuum pump, and by operating this vacuum pump, the inside of the chamber 1 can be depressurized to a predetermined vacuum level. The exhaust flow rate of the exhaust device 73 and the like are controlled by a control device 200. In addition, an opening 74 for loading and unloading the substrate W is formed in a sidewall of the chamber 1, and a gate valve G for opening and closing the opening 74 is provided in the opening 74.

[0028] A deposit shield 76 is detachably provided on the inner wall of the chamber 1 along the surface of the inner wall. A deposit shield 77 is disposed on the outer circumferential surface of the inner wall member 3a so as to cover the inner wall member 3a. The deposit shields 76 and 77 prevent etching by-products (deposits) from adhering to the inner wall of the chamber 1. A conductive member (GND block) 79 connected to ground in a direct current is provided at the position of the deposit shield 76 at approximately the same height as the substrate W attracted and held on the electrostatic chuck 6. The conductive member 79 suppresses abnormal discharge in the chamber 1.

[0029] In addition, a ring magnet 9 is concentrically arranged around the chamber 1. The ring magnet 9 forms a magnetic field in the space between the shower head 16 and the substrate 2a. The ring magnet 9 is rotatably held by a rotation mechanism (not shown).

[0030] [Division of the area of ​​the electrostatic chuck 6] Fig. 3 is a diagram showing an example of how the regions of the electrostatic chuck 6 are divided. For example, as shown in Fig. 3, the top surface of the electrostatic chuck 6 is divided into a plurality of concentric areas centered on the central position O of the electrostatic chuck 6. In the following, the area including the central position O and the area adjacent to this area will be referred to as area A, the area adjacent to area A as area B, the area adjacent to area B as area C, and the outermost area as area D. One temperature sensor 7 is provided in each area.

[0031] Moreover, each area is divided into a plurality of zones 60 in the circumferential direction of a circle centered on the central position O. In the example of Fig. 3, in area A, the area adjacent to the area including the central position O is divided into three zones 60, area B is divided into three zones 60, area C is divided into four zones 60, and area D is divided into four zones 60. Note that the manner in which the areas of the electrostatic chuck 6 are divided is not limited to the manner exemplified in Fig. 3.

[0032] A heater 6c is disposed inside the electrostatic chuck 6 corresponding to each of the zones 60. The power supplied to the heater 6c provided in each of the zones 60 is controlled by the control device 200 independently.

[0033] [Configuration of control device 200] Fig. 4 is a block diagram showing an example of the control device 200. As shown in Fig. 4, the control device 200 includes a plurality of power supply units 20-1 to 20-n, a measurement unit 24, a control unit 25, and a holding unit 26. Note that, hereinafter, when the plurality of power supply units 20-1 to 20-n are collectively referred to without distinguishing between them, they will be referred to as power supply unit 20.

[0034] Each power supply unit 20 is provided for each heater 6c provided in the zone 60 of the electrostatic chuck 6, and supplies power to the corresponding heater 6c. In this embodiment, 15 heaters 6c are provided in the electrostatic chuck 6, and 15 power supply units 20 corresponding to the number of heaters 6c are provided in the control device 200. Each power supply unit 20 has a switch (SW) 21, an ammeter 22, and a voltmeter 23.

[0035] SW21 is turned on and off under control of control unit 25, and during the on period, supplies power supplied from AC power supply 27 to the corresponding heater 6c. Ammeter 22 measures the instantaneous value of AC current supplied from AC power supply 27 to the corresponding heater 6c, and outputs the value to measurement unit 24. Voltmeter 23 measures the instantaneous value of AC voltage supplied from AC power supply 27 to the corresponding heater 6c, and outputs the value to measurement unit 24.

[0036] The measurement unit 24 measures the resistance value of each heater 6c based on the measured values ​​of the voltage and current output to the heater 6c from each power supply unit 20. Then, the measurement unit 24 outputs the measured resistance value for each heater 6c to the control unit 25.

[0037] The holding unit 26 holds a recipe indicating processing conditions for the substrate W, a conversion table 260, a calibration value table 261, a coefficient table 262, and the like. Fig. 5 is a diagram showing an example of the conversion table 260. The conversion table 260 stores an individual table 2601 for each zone ID 2600 that identifies the zone 60 in which each heater 6c is provided. Each individual table 2601 stores a resistance value of the heater 6c in association with a temperature.

[0038] The recipe stored in the holding unit 26 includes information on the target temperature of each zone 60 for each process. The calibration value table 261 and the coefficient table 262 will be described later in detail. The recipe is created in advance by an administrator of the processing system 10 or the like and stored in the holding unit 26. The calibration value table 261 and the coefficient table 262 are created in a calibration process described later. The conversion table 260 is created in a creation process described later.

[0039] The control unit 25 controls each part of the processing apparatus 100 based on the recipe held in the holding unit 26. Furthermore, the control unit 25 controls the power supplied to the heaters 6c provided in each zone 60 of the electrostatic chuck 6 in each process step, thereby controlling the temperature of the substrate W placed on the electrostatic chuck 6 to be the target temperature indicated in the recipe. The control unit 25 also executes a calibration process of the IR camera 51, which will be described later, and a creation process of the conversion table 260.

[0040] [Temperature control processing] 6 is a flowchart showing an example of a temperature control process. For example, when the control device 200 starts a process based on a recipe, the control device 200 starts the temperature control process shown in this flowchart. Note that the storage unit 26 stores information such as a conversion table 260 and recipes in advance.

[0041] First, the control unit 25 starts supplying power to each heater 6c by controlling the SW21 in each power supply unit 20 (S100). Then, the measurement unit 24 measures the resistance value of the heater 6c for each zone 60 based on the instantaneous value of the AC current measured by each ammeter 22 and the instantaneous value of the AC voltage measured by each voltmeter 23 (S101). The measurement unit 24 averages the resistance values ​​measured multiple times for each heater 6c during a predetermined period (e.g., several seconds) and outputs the averaged resistance value to the control unit 25.

[0042] Next, the control unit 25 refers to the conversion table 260 in the storage unit 26 for each zone 60, and estimates a temperature corresponding to the resistance value of the heater 6c provided in the zone 60 as the temperature of the zone 60 (S102). Then, the control unit 25 controls the on / off ratio of the SW21 in the power supply unit 20 according to the difference between the estimated temperature and the target temperature for each zone 60, thereby controlling the power supplied to the heater 6c (S103).

[0043] Next, the control unit 25 refers to the recipe and determines whether the process is completed (S104). If the process is not completed (S104: No), the measurement unit 24 executes the process shown in step S101 again. On the other hand, if the process is completed (S104: Yes), the control device 200 ends the temperature control process shown in this flowchart.

[0044] Here, if a temperature sensor is provided in the base material 2a for each zone 60 of the electrostatic chuck 6 to measure the temperature of each zone 60, a space for arranging the temperature sensor is required in the base material 2a. Furthermore, when the temperature distribution of the electrostatic chuck 6 is controlled more precisely, the electrostatic chuck 6 is divided into more zones 60. Therefore, more temperature sensors are arranged in the base material 2a according to the number of zones 60. If the number of temperature sensors arranged in the base material 2a increases, it becomes difficult to miniaturize the base material 2a. Furthermore, if the number of temperature sensors arranged in the base material 2a increases, the structure of the base material 2a becomes complicated and the degree of freedom in design is reduced.

[0045] In contrast, in the processing system 10 of this embodiment, the temperature of each zone 60 is estimated based on the resistance value of the heater 6c provided for each zone 60 in the electrostatic chuck 6. This eliminates the need to place a temperature sensor in the substrate 2a, making it possible to reduce the size of the substrate 2a. In addition, since the number of temperature sensors placed in the substrate 2a can be reduced, the structure of the substrate 2a can be simplified and the degree of freedom in design can be improved.

[0046] [Creating conversion table 260] In order to control the temperature of each heater 6c, for example, a conversion table 260 shown in FIG. 5 must be created in advance. A method for creating the conversion table 260 will be described below. The conversion table 260 is created by a processing device 100 having a configuration as shown in FIG. 7. FIG. 7 is a schematic cross-sectional view showing an example of the configuration of the processing device 100 when creating the conversion table 260 in the first embodiment. The processing system 10 including the processing device 100 and the control device 200 when creating the conversion table 260 shown in FIG. 7 is an example of a calibration system.

[0047] When creating the conversion table 260, for example, as shown in Fig. 7, the shower head 16 described using Fig. 2 is removed from the chamber 1, and the calibration unit 50 is attached to the chamber 1. Note that, except for the points described below, in Fig. 7, the members denoted with the same reference numerals as those in Fig. 2 have the same or similar functions as the members shown in Fig. 2, and therefore description thereof will be omitted.

[0048] The calibration unit 50 has an infrared (IR) camera 51 and a cover member 52. The cover member 52 supports the IR camera 51 so that the shooting direction of the IR camera 51 faces the electrostatic chuck 6. The IR camera 51 measures the distribution of the radiation amount of infrared rays emitted from the upper surface of the electrostatic chuck 6. Hereinafter, the measured value of the radiation amount of infrared rays will be referred to as an IR value. Then, the IR camera 51 outputs information indicating the distribution of the measured IR values ​​to the control device 200.

[0049] A region of zone 60 in an image captured by IR camera 51 includes a plurality of pixels 62, as shown in Fig. 8, for example. Fig. 8 is a diagram showing an example of zone 60 captured by IR camera 51. An IR value is associated with each pixel 62. In this embodiment, control unit 25 of control device 200 divides each zone 60 into a plurality of divided zones 61, averages the IR values ​​of the pixels in each divided zone 61 for each divided zone 61, and uses the averaged IR value as the IR value of the divided zone 61.

[0050] A plurality of convex portions are formed on the upper surface of the electrostatic chuck 6. A slight thermal gradient exists between the tips of the convex portions and the upper surface of the electrostatic chuck 6. Therefore, a slight temperature difference occurs between the tips of the convex portions and the upper surface of the electrostatic chuck 6. Since the temperature of each divided zone 61 corresponds to the average value of the IR values ​​measured within the divided zone 61, if there is a large difference in the number of convex portions between the divided zones 61, the measured temperatures will differ between the divided zones 61 even if the temperature of the entire electrostatic chuck 6 is uniform. Therefore, it is preferable that each divided zone 61 is arranged so that the difference in the number of convex portions included in the divided zones 61 is small between the divided zones 61.

[0051] Here, the IR value measured by the IR camera 51 varies due to the influence of temperature changes and aging of the IR camera 51 itself. In addition, there are individual differences in the IR values ​​measured between different IR cameras 51. If the IR values ​​measured by the IR camera 51 vary, it becomes difficult to correctly measure the temperature of each zone 60. Therefore, the accuracy of the conversion table 260 indicating the correspondence between the resistance value and the temperature of the heater 6c in each zone 60 decreases. As a result, the accuracy of estimating the temperature of each zone 60 from the resistance value of the heater 6c arranged in each zone 60 of the electrostatic chuck 6 decreases.

[0052] Therefore, in this embodiment, the IR camera 51 is calibrated before creating the conversion table 260, and the conversion table 260 is created using the calibrated IR camera 51. The calibration process of the IR camera 51 will be described below.

[0053] [Calibration process for IR camera 51] Fig. 9 is a flowchart showing an example of the calibration process of the IR camera 51. The calibration process shown in Fig. 9 is realized by the control device 200 controlling each part of the IR camera 51 and the processing device 100. Note that the calibration process of the IR camera 51 is performed, for example, when the inspection result of the IR camera 51 after the calibration does not fall within a predetermined reference value in one inspection, or every predetermined period (for example, several days to several months).

[0054] In the calibration process, first, the control unit 25 executes an acquisition step (S200). In the acquisition step, the electrostatic chuck 6 on which the substrate W is placed is set to a plurality of different temperatures, and the IR value of each divided zone 61 on the upper surface of the electrostatic chuck 6 measured by the IR camera 51 at each temperature is acquired.

[0055] Next, the control unit 25 executes a calibration value calculation step (S300). In the calibration value calculation step, at each temperature, the difference between the IR value of the reference region, which is the divided zone 61 in which the temperature sensor 7 is provided, and the IR of the other divided zones 61 is calculated as a calibration value.

[0056] Next, the control unit 25 executes an interpolation curve specifying step (S400). In the interpolation curve specifying step, for each divided zone 61, an interpolation curve indicating the tendency of the change in the calibration value relative to the IR value of the reference region is specified.

[0057] [Acquisition process] FIG. 10 is a flowchart showing an example of the process in the acquisition step.

[0058] First, the control unit 25 controls the chiller unit 33 to set the temperature of the heat medium to a set value T C The first temperature T min (S201). The first temperature T min is, for example, 0° C. Note that the first temperature T min The temperature may be lower than 0° C. or may be higher than 0° C. Then, the control unit 25 waits for a predetermined time until the temperature of the electrostatic chuck 6 becomes stable (S202).

[0059] Next, the control unit 25 acquires an IR value of the upper surface of the electrostatic chuck 6 measured by the IR camera 51 (S203). An IR value is associated with each pixel in the image captured by the IR camera 51. Then, the control unit 25 determines the set value T C is the second temperature T max It is determined whether the second temperature T maxis, for example, 80° C. In addition, the second temperature T max The temperature may be lower than 80°C or higher than 80°C.

[0060] Heat transfer medium temperature setting T C is the second temperature T max If it is less than the set value T C by a predetermined temperature ΔT1 (S205), and the process shown in step S202 is executed again. The predetermined temperature ΔT1 is, for example, 10° C. Note that the predetermined temperature ΔT1 may be a temperature lower than 10° C. or may be a temperature higher than 10° C.

[0061] On the other hand, the set temperature of the heat transfer medium T C is the second temperature T max If so (S204: Yes), the control unit 25 ends the process of the acquisition step shown in this flowchart, whereby the IR values ​​of the pixels associated with different temperatures are acquired.

[0062] [Calibration value calculation process] Fig. 11 is a flowchart showing an example of the process in the calibration value calculation step. The process in the calibration value calculation step shown in Fig. 11 is a process performed using data on the distribution of IR values ​​of each pixel for each temperature acquired in the acquisition step.

[0063] First, the control unit 25 sets the set value T C The first temperature T min (S301). Then, the control unit 25 sets the set value T C Then, the IR value associated with the IR signal is selected (S302).

[0064] Next, control unit 25 selects one unselected area, and extracts an IR value corresponding to the selected area from the IR values ​​selected in step S302 (S303).

[0065] Next, control unit 25 selects one unselected zone 60 from the area selected in step S303, and extracts an IR value corresponding to the selected zone 60 from the IR values ​​selected in step S303 (S304).

[0066] Next, the control unit 25 uses the IR values ​​extracted in step S304 to calculate an average IR value IR for each divided zone 61 in the zone 60 selected in step S304. A is calculated (S305).

[0067] Next, the control unit 25 determines whether or not all the zones 60 in the area selected in step S303 have been selected (S306). If there is an unselected zone 60 (S306: No), the process shown in step S304 is executed again.

[0068] On the other hand, if all the zones 60 are selected (S306: Yes), the control unit 25 calculates the calibration value C for each divided zone 61 (S307). Then, the control unit 25 calculates the calculated calibration value C as IR S , and stores the result in a calibration value table 261 (to be described later) (S308).

[0069] The calibration value C of each divided zone 61 is the IR A and IR is the average IR value of the divided zone 61 in which the temperature sensor 7 is arranged within the area selected in step S303. S It is calculated, for example, by the following formula (1).

number

[0070] Next, the control unit 25 judges whether or not all areas have been selected (S309). If there is an unselected area (S309: No), the process shown in step S303 is executed again.

[0071] On the other hand, if all areas are selected (S309: Yes), the control unit 25C is the second temperature T max It is determined whether the temperature of the heat medium is equal to or higher than the set value T C is the second temperature T max If it is less than the set value T C is increased by a predetermined temperature ΔT1 (S311), and the process shown in step S302 is executed again.

[0072] On the other hand, the set temperature of the heat transfer medium T C is the second temperature T max If so (S310: Yes), the control unit 25 ends the calibration value calculation process shown in this flowchart. As a result, a calibration value table 261 having a data structure such as that shown in FIG. 12 is stored in the holding unit 26. FIG. 12 is a diagram showing an example of the calibration value table 261. In the calibration value table 261, an individual table 2611 is stored for each divided zone ID 2610 that identifies each divided zone 61. Each individual table 2611 contains IR S The calibration value C is stored in correspondence with the

[0073] [Interpolation curve identification process] Fig. 13 is a flowchart showing an example of the process in the interpolation curve specifying step. The process in the interpolation curve specifying step shown in Fig. 11 is a process performed using the data in the calibration value table 261 stored in the calibration value calculation step.

[0074] First, the control unit 25 selects one of the unselected divided zones 61, and selects from the calibration value table 261 the IR corresponding to the selected divided zone 61. S and the calibration value C (S400). Then, the control unit 25 extracts the extracted IR S and the calibration value C, IR S The coefficients of the interpolation curve that indicate the tendency of the change in the calibration value C with respect to the input signal are identified (S401).

[0075] 14 is a diagram for explaining an example of a process for specifying coefficients of an interpolation curve.S The calibration value C extracted in step S400 is plotted as data 80 on an xy coordinate plane with the x-axis and the calibration value C as the y-axis, and an interpolation curve 81 indicating the tendency of the plotted data 80 is specified. In this embodiment, the interpolation curve 81 is a quadratic curve expressed by the following formula (2).

number

[0076] In the above formula (2), a, b, and c are coefficients of the interpolation curve 81. The coefficients a, b, and c are an example of parameters of the interpolation curve 81. The interpolation curve 81 may be a curve of third or higher degree. Furthermore, the control unit 25 may specify an approximation line instead of the interpolation curve 81 as a line segment indicating the tendency of the plotted data 80.

[0077] Next, the control unit 25 stores the coefficients a, b, and c of the interpolation curve 81 shown in the above formula (2) in the coefficient table 262, which will be described later (S402). Step S402 is an example of a storage step.

[0078] Next, the control unit 25 determines whether or not all of the divided zones 61 have been selected (S403). If an unselected divided zone 61 remains (S403: No), the process shown in step S400 is executed again.

[0079] On the other hand, if all the divided zones 61 have been selected (S403: Yes), the control unit 25 ends the processing of the interpolation curve specification step shown in this flowchart. As a result, a coefficient table 262 having a data structure such as that shown in Fig. 15 is stored in the holding unit 26. Fig. 15 is a diagram showing an example of the coefficient table 262. The coefficient table 262 stores values ​​of the coefficients a, b, and c of the interpolation curve in association with the divided zone IDs that identify the respective divided zones 61.

[0080] [Temperature measurement process] Next, a process of measuring the temperature of each divided zone 61 on the electrostatic chuck 6 from an image captured by the IR camera 51 using the coefficient table 262 created by the calibration process will be described. Fig. 16 is a flowchart showing an example of the temperature measurement process. The temperature measurement process illustrated in Fig. 16 is realized by the control device 200 controlling the IR camera 51 and each part of the processing device 100.

[0081] First, the control unit 25 detects the temperature T S The control unit 25 acquires the IR values ​​of all the divided zones 61 of the electrostatic chuck 6 from the IR camera 51 (S501). The control unit 25 then acquires the average IR value for each divided zone 61. A is calculated (S502).

[0082] Next, the control unit 25 selects one of the unselected areas and calculates the IR A From the above, IR of 61 divided zones included in the selected area A is extracted (S503).

[0083] Next, the control unit 25 calculates the IR of each divided zone 61 included in the area selected in step S503. A Calibrate and IR A Specifically, the control unit 25 calculates the IR′ of the divided zone 61 included in the area selected in step S503. A In the above, the IR of the divided zone 61 in which the temperature sensor 7 is arranged is A IR S Then, the control unit 25 extracts coefficients of an interpolation curve from the coefficient table 262 for each divided zone 61 included in the area selected in step S503. Then, the control unit 25 extracts coefficients of an interpolation curve for each divided zone 61, on the interpolation curve corresponding to the extracted coefficients, as follows: IR S Then, the control unit 25 determines a calibration value C corresponding to the calibrated IR for each divided zone 61 using the following formula (3). A ' is calculated.

number

[0084] This makes it possible to calibrate the measurement error of the IR camera 51 for each divided zone 61, and improve the accuracy of the IR value of the divided zone 61.

[0085] Next, the control unit 25 performs IR A ' and the temperature T of the temperature sensor 7 in the area S and the IR of the divided zone 61 in which the temperature sensor 7 is arranged. S and the temperature T of the division zone 61 D The control unit 25 calculates the temperature T of each divided zone, for example, by using the following formula (4): D Calculate.

number

[0086] Next, the control unit 25 judges whether or not all areas have been selected (S506). If there is an unselected area (S506: No), the control unit 25 executes the process shown in step S503 again. On the other hand, if all areas have been selected (S506: Yes), the control unit 25 executes the process shown in step S500 again.

[0087] [Experimental Results] FIG. 17 is a diagram showing an example of the measurement result of the temperature distribution of each zone 60 in the comparative example. FIG. 18 is a diagram showing an example of the measurement result of the temperature distribution of each zone 60 in the present embodiment. In the experiment, the chiller unit 33 was controlled so that the temperature of the heat medium flowing in the base material 2a was 80° C. In addition, in the experiment, the power supply to each heater 6c was stopped. Since the temperature of the heat medium flowing in the base material 2a was 80° C., the temperature of the upper surface of the electrostatic chuck 6 was also uniformly about 80° C. In addition, in FIG. 17 and FIG. 18, the average of the measured temperature values ​​of the divided zones 61 included in each zone 60 is plotted as the temperature of the zone 60.

[0088] In the comparative example, the IR value measured by the IR camera 51 was used as is to measure the temperature of each zone 60. In the comparative example, the measured temperature values ​​of zone 60 vary in each area, as shown in Fig. 17 for example. In the comparative example, the measured temperature values ​​of zone 60 vary the most in area D, with the difference between the maximum and minimum values ​​being approximately 1.18°C.

[0089] In contrast, in this embodiment, the range of variation in the measured temperature values ​​of zone 60 in each area is much lower than in the comparative example, as shown in Fig. 18. In the example of Fig. 18, the variation in the measured temperature values ​​of zone 60 in area D is the largest, but the difference between the maximum and minimum values ​​is about 0.09°C.

[0090] In this manner, by calibrating the IR value of the IR camera 51 using the coefficient table 262 identified by the calibration process of the IR camera 51, the accuracy of the temperature measurement by the IR camera 51 can be improved.

[0091] [Conversion table 260 creation process] Fig. 19 is a flowchart showing an example of a process for creating the conversion table 260. The control device 200 starts the process shown in this flowchart when, for example, an instruction for creating the conversion table 260 is received from an administrator of the processing system 10. Note that in parallel with the process for creating the conversion table 260 shown in Fig. 19, the temperature measurement process shown in Fig. 16 is executed.

[0092] First, the control unit 25 controls the power supplied to the chiller unit 33 and each of the electrodes 6c to adjust the temperature T E to a predetermined temperature T1 (S600). The predetermined temperature T1 is, for example, 20° C. Note that the predetermined temperature T1 may be a temperature lower than 20° C. or may be a temperature higher than 20° C. Then, the control unit 25 waits for a predetermined time until the temperature of the electrostatic chuck 6 becomes stable (S601).

[0093] Next, the control unit 25 selects one of the unselected zones 60 (S602). Then, the control unit 25 calculates the temperature T D The temperature T of the divided zone 61 included in the zone 60 selected in step S602 is D Then, the control unit 25 extracts the temperature T D , and the temperature T Z (S603).

[0094] Next, the measurement unit 24 measures the resistance value R of the heater 6c arranged in the zone 60 selected in step S602 based on the measured values ​​of the voltage and current of the heater 6c output from the power supply unit 20 (S604). Then, the control unit 25 calculates the temperature T identified in step S603 in association with the zone 60 selected in step S602. Z and the resistance value R calculated in step S604 are stored in the conversion table 260 (S605).

[0095] Next, the control unit 25 determines whether or not all the zones 60 have been selected (S606). If an unselected zone 60 remains (S606: No), the control unit 25 executes the process shown in step S602 again.

[0096] On the other hand, when all the zones 60 are selected (S606: Yes), the control unit 25 E It is determined whether the temperature T2 is equal to or higher than a predetermined temperature T2 (S607). The predetermined temperature T2 is, for example, 120° C. Note that the predetermined temperature T2 may be a temperature lower than 120° C. or may be a temperature higher than 120° C.

[0097] Temperature T of electrostatic chuck 6 E If the temperature T of the electrostatic chuck 6 is less than the predetermined temperature T2 (S607: No), the control unit 25 controls the power supplied to the chiller unit 33 and each of the 6c to E by a predetermined temperature ΔT2 (S608). Then, the control unit 25 executes the process shown in step S601 again. The predetermined temperature ΔT2 is, for example, 10°C. Note that the predetermined temperature ΔT2 may be a temperature lower than 10°C or a temperature higher than 10°C.

[0098] On the other hand, the temperature T of the electrostatic chuck 6 E is equal to or higher than the predetermined temperature T2 (S607: Yes), the control unit 25 ends the process of creating the conversion table 260 shown in this flowchart. As a result, the conversion table 260 shown in FIG. 5 is created.

[0099] The first embodiment has been described above. The calibration method of the IR camera 51 in this embodiment includes an acquisition step, a calibration value calculation step, an interpolation curve specification step, and a storage step. In the acquisition step, the electrostatic chuck 6 on which the substrate W is placed is set to a plurality of different temperatures, and the IR value, which is a measurement value of the amount of infrared radiation from each of the plurality of divided zones 61 on the upper surface of the electrostatic chuck 6, is acquired by the IR camera 51 at each temperature. In the calibration value calculation step, the difference between the IR value of the reference region, which is the divided zone 61 in which the temperature sensor 7 is provided, and the IR value of the other regions is calculated as the calibration value C at each temperature. In the interpolation curve specification step, an interpolation curve indicating a tendency of change in the calibration value C relative to the IR value of the reference region is specified for each divided zone 61. In the storage step, parameters that define the interpolation curve specified for each divided zone 61 are stored. By using the calibration value on the interpolation curve based on the stored parameters, the accuracy of temperature measurement by the IR camera 51 can be improved.

[0100] In the above embodiment, the IR camera 51 outputs an IR value for each pixel, and the IR value of each divided zone 61 is the average value of the IR values ​​of a plurality of pixels when the divided zone 61 is photographed by the IR camera 51. This makes it possible to reduce the amount of calculation required to calibrate the IR value.

[0101] In the above embodiment, a plurality of convex portions are formed on the surface of the electrostatic chuck 6 on the side on which the substrate W is placed, and each divided zone 61 is preferably arranged such that the difference in the number of convex portions included in each divided zone 61 is small between the divided zones 61. This can improve the measurement accuracy of the temperature of each divided zone 61.

[0102] In the embodiment described above, a flow path 2b through which a temperature-controlled heat medium flows is formed inside the base material 2a, and in the obtaining step, the temperature of the heat medium flowing in the flow path 2b is controlled to set the temperature of the flow path 2b and the electrostatic chuck 6. This makes it possible to make the temperature of the entire electrostatic chuck 6 uniform.

[0103] Second Embodiment In the first embodiment described above, the temperature T measured by the temperature sensor 7 provided in the substrate 2a S In contrast, in this embodiment, a measurement substrate W′ provided with a plurality of temperature sensors 70 is placed on the electrostatic chuck 6, and the temperature T S The IR value of each divided zone 61 is calibrated based on the temperature distribution close to the actual temperature distribution of the substrate W, and the accuracy of temperature measurement by the IR camera 51 can be further improved.

[0104] In this embodiment, the conversion table 260 is created by a processing device 100 having a configuration as shown in Fig. 20. Fig. 20 is a schematic cross-sectional view showing an example of the configuration of the processing device 100 when creating the conversion table 260 in the second embodiment. The processing system 10 including the processing device 100 and the control device 200 shown in Fig. 20 is an example of a calibration system.

[0105] In this embodiment, when creating the conversion table 260, for example, as shown in FIG. 20, the shower head 16 is removed from the chamber 1, and the calibration unit 50 is attached to the chamber 1. Then, a measurement substrate W' having a plurality of temperature sensors 70 is placed on the electrostatic chuck 6. In this embodiment, the temperature T S The IR value of each divided zone 61 is calibrated based on the temperature sensor 7. Therefore, the temperature sensor 7 does not need to be provided in the substrate 2a in order to calibrate the IR value of each divided zone 61. In the example of FIG. 20, the temperature sensor 7 is not provided in the substrate 2a. This allows the substrate 2a to be made smaller or the structure of the substrate 2a to be simplified. Note that, except for the points described below, in FIG. 20, the members denoted with the same reference numerals as those in FIG. 2 or FIG. 7 have the same or similar functions as the members shown in FIG. 2 or FIG. 7, and therefore description thereof will be omitted.

[0106] The cover member 52 supports the IR camera 51 so that the shooting direction of the IR camera 51 faces the direction of the measurement substrate W' placed on the electrostatic chuck 6. The IR camera 51 measures the distribution of the radiation amount of infrared rays emitted from the upper surface of the measurement substrate W'. Then, the IR camera 51 outputs information indicating the distribution of the measured values ​​of the radiation amount of infrared rays to the control device 200. Hereinafter, the measured value of the radiation amount of infrared rays will be referred to as an IR value. In this embodiment, the IR value is the measured value of the radiation amount of infrared rays emitted from the upper surface of the measurement substrate W'.

[0107] FIG. 21 is a diagram showing an example of the arrangement of the temperature sensors 70 provided on the measurement substrate W'. The measurement substrate W' is provided with a plurality of temperature sensors 70. The temperature sensors 70 are, for example, thermocouples or resistance temperature detectors. The measurement substrate W' is placed on the electrostatic chuck 6 so that the reference position of the measurement substrate W' coincides with the reference position of the electrostatic chuck 6. The reference position of the measurement substrate W' is, for example, the position O' of the central axis of the substantially disc-shaped measurement substrate W'. The reference position of the electrostatic chuck 6 is, for example, the position O of the central axis of the substantially cylindrical electrostatic chuck 6. The plurality of temperature sensors 70 are arranged on the measurement substrate W' such that, when the measurement substrate W' is placed on the electrostatic chuck 6, one temperature sensor 70 is provided at each of the positions corresponding to the areas A to D on the upper surface of the electrostatic chuck 6, as shown in FIG. 21.

[0108] In this embodiment, the multiple temperature sensors 70 are embedded in the measurement substrate W'. This can prevent the infrared rays radiated from the surface of the measurement substrate W' toward the IR camera 51 from being blocked by the temperature sensors 70. The multiple temperature sensors 70 may be provided on the surface of the measurement substrate W', and the measurement substrate W' may be placed on the electrostatic chuck 6 so that the surface of the measurement substrate W' on which the temperature sensors 70 are provided faces the IR camera 51. This allows the temperature of the surface of the measurement substrate W' to be measured more accurately by the temperature sensors 70. In addition, the measurement substrate W' on which the multiple temperature sensors 70 are provided can be easily created. When the temperature sensors 70 are provided on the surface of the measurement substrate W', it is preferable that the IR value of the infrared rays radiated from the area on the measurement substrate W' on which the temperature sensors 70 are provided is masked and replaced with a value interpolated based on the IR value of the area around the temperature sensors 70.

[0109] In this embodiment, at least one of the two main surfaces of the measurement substrate W' is coated with a material having a higher infrared emissivity than silicon. For example, a black material is applied to at least one of the two main surfaces of the measurement substrate W'. Note that, as long as the material has a higher infrared emissivity than silicon, a material of a color other than black, such as red or green, may be applied. The coating method of the measurement substrate W' is not limited to coating, and a plate-shaped or thin-film-shaped material having a higher infrared emissivity than silicon may be attached to at least one of the two main surfaces of the measurement substrate W'. A material having a higher infrared emissivity than silicon and a thermal conductivity equivalent to that of silicon may be used as the measurement substrate W'. Examples of such materials include anodized aluminum alloys. Such materials or materials having properties equivalent thereto may be processed into a plate or thin-film shape and attached to at least one of the two main surfaces of the measurement substrate W'. The measurement substrate W' is placed on the electrostatic chuck 6 so that the surface coated with the material having a higher infrared emissivity than silicon faces the IR camera 51. This allows the IR camera 51 to efficiently receive the infrared rays emitted from the measurement substrate W'.

[0110] The measured value of infrared radiation emitted from the measurement substrate W' is used as the IR value, and the temperature T S Since this embodiment is similar to the first embodiment except that the temperature measured by the temperature sensor 70 provided at the position on the measurement substrate W' corresponding to each area is used as the temperature sensor, the following description will be omitted.

[0111] The second embodiment has been described above. The calibration method of the IR camera 51 in this embodiment includes an acquisition step, a calibration value calculation step, an interpolation curve specification step, and a storage step. In the acquisition step, the electrostatic chuck 6 on which the substrate W is placed is set to a plurality of different temperatures. Then, at each temperature, the IR camera 51 acquires an IR value, which is a measurement value of the amount of infrared radiation from each of a plurality of divided zones 61 on the upper surface of the measurement substrate W' placed on the electrostatic chuck 6. In the calibration value calculation step, at each temperature, the difference between the IR value of the reference region, which is the divided zone 61 corresponding to the position of the temperature sensor 70 provided on the measurement substrate W', and the IR value of the other divided zones 61 is calculated as a calibration value C. In the interpolation curve specification step, an interpolation curve indicating a tendency of change in the calibration value C relative to the IR value of the reference region is specified for each divided zone 61. In the storage step, parameters that define the interpolation curve specified for each divided zone 61 are stored. By using the calibration value on the interpolation curve based on the stored parameters, the accuracy of temperature measurement by the IR camera 51 can be improved.

[0112] A processing system 10, which is an example of a calibration system in this embodiment, includes a chamber 1, an electrostatic chuck 6, a temperature sensor 70, an IR camera 51, and a control device 200. The electrostatic chuck 6 is provided in the chamber 1, and a measurement substrate W' is placed thereon. The temperature sensor 70 is provided on the measurement substrate W' and measures the temperature of the measurement substrate W'. The IR camera 51 measures the amount of infrared radiation emitted from the upper surface of the measurement substrate W' placed on the electrostatic chuck 6. The control device 200 executes an acquisition step, a calibration value calculation step, an interpolation curve specification step, and a storage step. In the acquisition step, the electrostatic chuck 6 is set to a plurality of different temperatures, and the IR camera 51 acquires an IR value, which is a measurement value of the amount of infrared radiation from each of a plurality of divided zones 61 on the upper surface of the measurement substrate W' placed on the electrostatic chuck 6, at each temperature. In the calibration value calculation step, the difference between the IR value of a reference region, which is the divided zone 61 corresponding to the position of the temperature sensor 70, and the IR values ​​of the other divided zones 61 is calculated as a calibration value C at each temperature. In the interpolation curve calculation step, an interpolation curve indicating a tendency of change in the calibration value C with respect to the IR value of the reference region is calculated for each divided zone 61. In the storage step, parameters of the interpolation curve identified for each divided zone 61 are stored. By using the calibration value on the interpolation curve based on the stored parameters, it is possible to improve the accuracy of temperature measurement by the IR camera 51.

[0113] Furthermore, in the calibration system of this embodiment, the measurement substrate W' has at least one surface coated with a material having a higher infrared emissivity than silicon, and is placed on the electrostatic chuck 6 so that the coated surface faces the IR camera 51. This allows the IR camera 51 to efficiently receive the infrared rays radiated from the measurement substrate W'.

[0114] [Hardware] The control device 200 in each of the above-described embodiments is realized by, for example, hardware shown in Fig. 22. Fig. 22 is a diagram showing an example of a hardware configuration of the control device 200. The control device 200 includes a CPU (Central Processing Unit) 201, a RAM (Random Access Memory) 202, a ROM (Read Only Memory) 203, and an auxiliary storage device 204. The control device 200 also includes a communication interface (I / F) 205, an input / output interface (I / F) 206, and a media interface (I / F) 207.

[0115] The CPU 201 operates based on a program read from the ROM 203 or the auxiliary storage device 204 and loaded onto the RAM 202, and controls each unit. The ROM 203 stores a boot program executed by the CPU 201 when the control device 200 is started up, a program dependent on the hardware of the control device 200, and the like.

[0116] The auxiliary storage device 204 is, for example, a hard disk drive (HDD) or a solid state drive (SSD), and stores programs executed by the CPU 201 and data used by the programs. The CPU 201 reads the programs from the auxiliary storage device 204, loads them onto the RAM 202, and executes the loaded programs.

[0117] The communication I / F 205 communicates with the processing device 100 and the IR camera 51 via a communication line such as a LAN (Local Area Network). The communication I / F 205 receives data from the processing device 100 and the IR camera 51 via the communication line and sends it to the CPU 201, and transmits data generated by the CPU 201 to the processing device 100 and the IR camera 51 via the communication line.

[0118] The CPU 201 controls an input device such as a keyboard and an output device such as a display via the input / output I / F 206. The CPU 201 acquires a signal input from an input device via the input / output I / F 206 and sends it to the CPU 201. The CPU 201 also outputs generated data to the output device via the input / output I / F 206.

[0119] The media I / F 207 reads a program or data stored in the recording medium 208, and stores it in the auxiliary storage device 204. The recording medium 208 is, for example, an optical recording medium such as a DVD (Digital Versatile Disc) or a PD (Phase change rewritable Disc), a magneto-optical recording medium such as an MO (Magneto-Optical disk), a tape medium, a magnetic recording medium, or a semiconductor memory.

[0120] The CPU 201 executes the programs loaded on the RAM 202 to realize the functions of the power supply unit 20, the measurement unit 24, and the control unit 25. The auxiliary storage device 204 also stores data in the holding unit 26.

[0121] The CPU 201 reads the program to be loaded onto the RAM 202 from the recording medium 208 and stores it in the auxiliary storage device 204, but as another example, the program may be obtained from another device via a communication line and stored in the auxiliary storage device 204.

[0122] [others] It should be noted that the technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0123] For example, in each of the above-described embodiments, each zone 60 is divided into a plurality of divided zones 61, and the average IR value IR A However, the disclosed technology is not limited to this. For example, IR A A calibration of the above may be performed.

[0124] In addition, in each of the above-described embodiments, one temperature sensor 7 or one temperature sensor 70 is provided in each area, but the disclosed technology is not limited to this. As another example, two or more temperature sensors 7 or two or more temperature sensors 70 may be provided in each area, or one temperature sensor may be provided for multiple areas.

[0125] In the above-described first embodiment, a fluorescent optical fiber thermometer has been described as an example of the temperature sensor 7, but the disclosed technology is not limited to this. The temperature sensor 7 may be a sensor other than the fluorescent optical fiber thermometer, such as a thermocouple, as long as it is a sensor capable of measuring temperature.

[0126] In addition, in each of the above-described embodiments, a plasma etching apparatus has been described as an example of an apparatus for processing the substrate W, but the disclosed technology is not limited to this. The disclosed technology can also be applied to, for example, a film forming apparatus, a modification apparatus, a cleaning apparatus, or the like, as long as the processing apparatus has a mechanism for controlling the temperature of the substrate W by the heater 6c when processing the substrate W.

[0127] In addition, in each of the above-described embodiments, a capacitively coupled plasma (CCP) is used as an example of a plasma source, but the disclosed technology is not limited to this. For example, an inductively coupled plasma (ICP), a microwave excited surface wave plasma (SWP), an electron cyclotron resonance plasma (ECP), or a helicon wave excited plasma (HWP) may be used as the plasma source.

[0128] It should be noted that the embodiments disclosed herein are illustrative in all respects and should not be construed as limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0129] W substrate W' measurement board 10 Processing System 100 Processing equipment 1 Chamber 2a Base material 2b Flow path 6 Electrostatic Chuck 6c Heater 7 Temperature Sensor 16. Shower Head 33 Chiller unit 50 Calibration Units 51 IR Camera 52 Cover member 60 Zone 61 Divided Zone 62 pixels 70 Temperature Sensor 80 Data 81 Interpolation Curve 200 Control device 20 Power supply section 21 SW 22 Ammeter 23 Voltmeter 24 Measuring part 25 Control Unit 26 Holding part 260 Conversion Table 261 Calibration Value Table 262 Coefficient Table 27 AC power supply

Claims

1. A chamber; a mounting table provided in the chamber and configured to mount a substrate thereon; a heater provided inside the mounting table; a temperature sensor provided inside the mounting table for measuring a temperature of a part of the mounting table; Control device and Equipped with a surface of the stage on which the substrate is placed includes a plurality of areas, each of the plurality of areas further including a plurality of zones; The temperature sensor is disposed within any one of the plurality of zones for each of the areas; The control device includes: setting a temperature of the mounting table based on a relationship between a temperature calculated using an infrared camera calibrated by a calibration process and a resistance value of the heater; The calibration process includes: an acquisition step of setting the mounting table to a plurality of different temperatures and acquiring, at each temperature, a measurement value of the amount of infrared radiation from a reference zone, which is the zone on the top surface of the mounting table where the temperature sensor is provided, and from each of the other zones where the temperature sensor is not provided, using the infrared camera; a calibration value calculation step of calculating, at each of the temperatures, a difference between the measurement value of the reference zone and the measurement value of another zone in which the temperature sensor is not provided, as a calibration value; an interpolation curve identification step of identifying an interpolation curve showing a trend of change of the calibration value with respect to the measurement value of the reference zone for each of the zones where the temperature sensor is not provided; a storing step of storing the parameters of the interpolation curve identified for each of the zones; Including, The control device, in the process of calculating a temperature using the infrared camera calibrated by the calibration process, A substrate processing system that calculates the temperature of each zone using a measurement value of infrared radiation calibrated using the interpolation curve corresponding to the stored parameters, a measurement value of infrared radiation from the reference zone, and a measurement value of the temperature sensor provided in the reference zone.

2. The infrared camera outputs the measurement value for each pixel; 2 . The substrate processing system of claim 1 , wherein the measurement value for each of the zones is an average value of the measurement values ​​for a plurality of pixels when the zone is imaged by the infrared camera.

3. a surface of the mounting table on which the substrate is to be mounted is formed with a plurality of protrusions; 3. The substrate processing system according to claim 1, wherein the zones are arranged such that a difference in the number of the convex portions included in the zones is small between the zones.

4. A flow path through which a temperature-controlled heat medium flows is formed inside the mounting table, In the obtaining step, 4. The substrate processing system according to claim 1, wherein a temperature of the mounting table is set by controlling a temperature of the heat medium flowing through the flow passage.

5. The heater is provided within each of the plurality of zones. The substrate processing system according to claim 1 .

6. The interpolation curve is a quadratic curve. The substrate processing system according to claim 1 .

7. The temperature sensor is a fiber optic thermometer. The substrate processing system according to claim 1 .

8. A method for controlling a temperature of a mounting table based on a relationship between a temperature calculated using an infrared camera calibrated by a calibration process and a resistance value of a heater, comprising: the heater is provided inside the mounting table, a surface of the stage on which the substrate is placed includes a plurality of areas, each of the plurality of areas further including a plurality of zones; A temperature sensor is disposed within any one of the plurality of zones for each of the areas; The calibration process includes: an acquisition step of setting the mounting table to a plurality of different temperatures and acquiring, at each temperature, a measurement value of the amount of infrared radiation from a reference zone, which is the zone on the top surface of the mounting table where the temperature sensor is provided, and from each of the other zones where the temperature sensor is not provided, using the infrared camera; a calibration value calculation step of calculating, at each of the temperatures, a difference between the measurement value of the reference zone and the measurement value of another zone in which the temperature sensor is not provided, as a calibration value; an interpolation curve specifying step of specifying an interpolation curve showing a trend of change of the calibration value with respect to the measurement value of the reference zone for each of the other zones where the temperature sensor is not provided; and storing the parameters of the interpolation curve determined for each of the zones; In the process of calculating a temperature using the infrared camera calibrated by the calibration process, calculating a temperature of each zone using the measured value of the amount of infrared radiation calibrated using the interpolation curve corresponding to the stored parameters, the measured value of the amount of infrared radiation from the reference zone, and the measured value of the temperature sensor provided in the reference zone; A method for controlling the temperature of a mounting table.

9. The infrared camera outputs the measurement value for each pixel; 9. The temperature control method for a mounting table according to claim 8, wherein the measurement value for each of the zones is an average value of the measurement values ​​for a plurality of pixels when the zone is photographed by the infrared camera.

10. a plurality of protrusions are formed on a surface of the stage on which the substrate is placed, 10. The temperature control method for a mounting table according to claim 8, wherein the zones are arranged such that a difference in the number of the protrusions included in the zones is small between the zones.

11. A flow path through which a temperature-controlled heat medium flows is formed inside the mounting table, In the obtaining step, 11. The temperature control method for the mounting table according to claim 8, wherein the temperature of the mounting table is set by controlling a temperature of the heat medium flowing through the flow passage.

12. The heater is provided within each of the plurality of zones. The temperature control method for the mounting table according to claim 8 .

13. The interpolation curve is a quadratic curve. The temperature control method for the mounting table according to claim 8 .

14. The temperature sensor is a fiber optic thermometer. The temperature control method for the mounting table according to claim 8 .

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