Semiconductor Device

Abstract

To provide a semiconductor device in which a solder member is less likely to be bridged between a semiconductor element and a conductive member.SOLUTION: A semiconductor device has: a semiconductor element 200 that comprises a first main electrode 210 formed on a first principal surface 200a, a second main electrode 220 formed on a second principal surface 200b at a rear side of the first principal surface in a plate thickness direction, and a protection film 240 provided on the first principal surface and including a sectionalizing part 241 for dividing the first main electrode into a plurality of regions; a conductive member 400 that comprises, on an opposed surface 400b facing the first principal surface in the plate thickness direction, a plurality of opposed parts 261 and 262 facing the first main electrode in the plate thickness direction, and an interposed part 263 provided between the plurality of opposed parts in an arrangement direction of the plurality of opposed parts; and a solder member 310 provided between the first main electrode and the plurality of opposed parts, being sectionalized into the plurality of regions by the sectionalizing part and the interposed part. The sectionalizing part is less likely to be wetted by the solder member than the first main electrode, and the interposed part is less likely to be wetted by the solder member than the opposed part.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The disclosure described herein relates to a semiconductor device including a semiconductor element, a conductive member, and solder. [Background technology]

[0002] Patent Document 1 describes a semiconductor device including a semiconductor substrate on which two emitter electrodes are formed, and a heat spreader fixed to each of the two emitter electrodes via solder. A polyimide film is provided between the two emitter electrodes. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-48889 A Summary of the Invention [Problem to be solved by the invention]

[0004] The polyimide film is difficult to wet with solder, so the solder spreads onto the heat spreader side, and the solder easily forms bridges between the semiconductor substrate and the heat spreader.

[0005] Therefore, an object of the present disclosure is to provide a semiconductor device in which the solder member is less likely to be bridged between a semiconductor element and a conductive member. [Means for solving the problem]

[0006] A semiconductor device according to an aspect of the present disclosure includes: A semiconductor element (200) including a first main electrode (210) formed on a first main surface (200a), a second main electrode (220) formed on a second main surface (200b) on the back side of the first main surface in the plate thickness direction, and a protective film (240) provided on the first main surface and including partition portions (241) that partition the first main electrode into a plurality of regions; a conductive member (400) including, on an opposing surface (400b) opposing the first main surface in the plate thickness direction, a plurality of opposing portions (261, 262) opposing the first main electrode in the plate thickness direction, and an intervening portion (263) provided between the plurality of opposing portions in the arrangement direction of the plurality of opposing portions; a solder member (310) provided between the first main electrode and the plurality of opposing portions and partitioned into a plurality of regions by partition portions and intervening portions; The partition portion is less wettable with the solder material than the first main electrode, The interposed portion is less likely to become wetted by the solder material than the opposing portion. And, On the opposing surface, an uneven portion (264a) is formed that surrounds the intermediate portion and the multiple opposing portions in a ring shape, and is uneven in the plate thickness direction and is less likely to become wetted by the solder material than the opposing portions. There are.

[0007] This makes it difficult for the solder member (310) to bridge between the semiconductor element (200) and the conductive member (400).

[0008] It should be noted that the reference numbers in parentheses above merely indicate the corresponding relationship with the configurations described in the embodiments described below, and do not in any way limit the technical scope. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram illustrating a semiconductor device. [Diagram 2] 2 is a cross-sectional view of the semiconductor device taken along line II-II shown in FIG. [Diagram 3] FIG. 2 is a top view of a semiconductor element. [Figure 4] This is a three-view drawing of the terminal. [Diagram 5] FIG. 2 is a top view of the semiconductor element with the second terminal surface superimposed thereon. [Figure 6] 6 is a cross-sectional view of the semiconductor device taken along line VI-VI shown in FIG. 5. [Figure 7] 13A and 13B are top views illustrating modified examples of the semiconductor element. [Figure 8] FIG. 13 is a top view of a modified example in which a second terminal surface is superimposed on a semiconductor element. [Figure 9] 13A and 13B are top views illustrating modified examples of the semiconductor element. [Figure 10] FIG. 13 is a top view of a modified example in which a second terminal surface is superimposed on a semiconductor element. [Figure 11] 11 is a cross-sectional view illustrating a modified example of the semiconductor device. [Figure 12] FIG. 13 is a top view illustrating a modified example of the terminal. [Figure 13] 11 is a cross-sectional view illustrating a modified example of the semiconductor device. [Figure 14] FIG. 11 is a correlation diagram illustrating the correlation between the contact angle of solder and the life of a semiconductor element. [Figure 15] 11 is a cross-sectional view illustrating a modified example of the semiconductor device. [Figure 16] 11 is a cross-sectional view illustrating a modified example of the semiconductor device. [Figure 17] 11 is a cross-sectional view illustrating a modified example of the semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, several embodiments for carrying out the present disclosure will be described with reference to the drawings. In each embodiment, the same reference numerals may be used to designate parts corresponding to matters described in the preceding embodiment, and duplicated descriptions may be omitted. In each embodiment, when only a part of the configuration is described, the other embodiment described previously may be applied to the other parts of the configuration.

[0011] In addition to combinations of parts that are explicitly stated as possible in each embodiment, it is also possible to partially combine embodiments, embodiments and variations, and variations even if not explicitly stated, provided that there are no particular problems with the combination.

[0012] (First embodiment) The mechanical structure of the semiconductor device 100 will be described below. In this regard, three mutually orthogonal directions are defined as the x-direction, y-direction, and z-direction. Note that the "directions" are omitted in the drawings. Note that the plate thickness direction corresponds to the z-direction. The arrangement direction corresponds to the x-direction.

[0013] 1 and 2, the semiconductor device 100 includes a semiconductor element 200, solder 300, terminal 400, a first heat sink 500, a second heat sink 600, a plurality of terminals 700, and a coating resin 800 that coats these. The plurality of terminals 700 specifically include a first main terminal 710, a second main terminal 720, and a signal terminal 730. Note that the coating resin 800 is omitted in Fig. 2. The terminal 400 corresponds to a conductive member.

[0014] The semiconductor device 100 is known as a so-called 1-in-1 package that constitutes one of a plurality of arms that constitute a three-phase inverter. The semiconductor device 100 is incorporated, for example, in an inverter circuit of a vehicle. Note that the semiconductor device 100 is not limited to a 1-in-1 package as shown in FIG. 1. The semiconductor device 100 may be a 2-in-1 package.

[0015] The semiconductor device 200 is configured by forming a power transistor such as an insulated gate bipolar transistor (IGBT) on a semiconductor material such as silicon, silicon carbide, etc. The power transistor has a so-called vertical structure so that a current flows in the z direction.

[0016] The semiconductor element 200 has a flat shape with a small thickness in the z direction. The semiconductor element 200 has a first main surface 200a and a second main surface 200b that are spaced apart in the z direction. The second main surface 200b is provided on the rear side of the first main surface 200a in the plate thickness direction.

[0017] 2, an emitter electrode 210, a gate liner 230, and a protective film 240 are provided on the first main surface 200a. The emitter electrode 210 is divided into a first emitter electrode 211 and a second emitter electrode 212 by the protective film 240. The first emitter electrode 211 and the second emitter electrode 212 may be electrically connected via a base electrode (not shown). A collector electrode 220 is provided on one surface of the second main surface 200b.

[0018] The emitter electrode 210 corresponds to a first main electrode, the collector electrode 220 corresponds to a second main electrode, and the gate liner 230 corresponds to a signal wiring.

[0019] For ease of explanation, the first main surface 200a will be divided into a first region 281, a second region 282, a third region 283, and a first peripheral region 287 as shown in Fig. 3. The first region 281 to the first peripheral region 287 will be explained in detail below.

[0020] 3, the first region 281 to the third region 283 are disposed in the center of the first main surface 200a. The first region 281 and the second region 282 are arranged side by side and spaced apart in the x-direction. The third region 283 is provided between the first region 281 and the second region 282. The first peripheral region 287 is provided on the first main surface 200a in a manner that surrounds the first region 281 to the third region 283 in an annular shape in the circumferential direction around the z-direction.

[0021] 3, a first emitter electrode 211 is formed in a first region 281. A second emitter electrode 212 is formed in a second region 282. A part of the gate liner 230 and a part of the protective film 240 are provided in a third region 283.

[0022] Hereinafter, a part of the gate liner 230 provided in the third region 283 will be referred to as a first gate liner 231. A part of the protective film 240 provided in the third region 283 will be referred to as a first protective portion 241. The first gate liner 231 is covered and protected by the first protective portion 241. The first protective portion 241 corresponds to a partition portion.

[0023] Further, in the first peripheral region 287, the remainder of the gate liner 230, the remainder of the protective film 240, and a plurality of pads 740 are provided. Hereinafter, the remainder of the gate liner 230 provided in the first peripheral region 287 is referred to as a second gate liner 232. The remainder of the protective film 240 provided in the first peripheral region 287 is referred to as a second protective portion 242. The second gate liner 232 is covered and protected by the second protective portion 242.

[0024] In FIG. 3, the gate liner 230 is shown by a broken line in order to clarify the position of the gate liner 230.

[0025] The gate liner 230 is a wiring having a low resistance in order to transmit an on / off signal to the gate electrode of the power transistor formed in the semiconductor element 200 without delay.

[0026] The protective film 240 is a protective member for protecting the gate liner 230 made of a member containing polyimide. The protective film 240 is less wettable with the solder 300 than the emitter electrode 210. More specifically, the first protective portion 241 and the second protective portion 242 are less wettable with the solder 300 than the first emitter electrode 211 and the second emitter electrode 212, respectively.

[0027] The pads 740 are electrodes for signals. The pads 740 are provided, for example, on the end side in the y direction of the semiconductor element 200. The pads 740 are exposed from the second protective portion 242.

[0028] Each of the multiple pads 740 is used, for example, for a gate electrode, a Kelvin emitter, a current sense, an anode potential of a temperature sensor, a cathode potential of the temperature sensor, etc. The multiple pads 740 are electrically connected to the multiple signal terminals 730 via bonding wires (not shown).

[0029] The terminal 400 is a conductive block having a substantially rectangular parallelepiped shape and is made of a metal member such as copper having excellent thermal conductivity and electrical conductivity.

[0030] As shown in Fig. 2, the terminal 400 has a first terminal surface 400a spaced apart from each other in the z direction, a second terminal surface 400b on the rear side thereof, and four connecting terminal surfaces 400c connecting the first terminal surface 400a and the second terminal surface 400b. The second terminal surface 400b is provided closer to the first main surface 200a in the z direction than the first terminal surface 400a. The second terminal surface 400b corresponds to the opposing surface.

[0031] Also, a first plating 250 is provided on the first terminal surface 400a, a second plating 260 is provided on the second terminal surface 400b, and a third plating 270 is provided on the connecting terminal surface 400c.

[0032] In the following, in order to specifically describe the second terminal surface 400b, the second terminal surface 400b will be described divided into a fourth region 284, a fifth region 285, and a sixth region 286. The fourth region 284 to the sixth region 286 will be specifically described below.

[0033] 4, the fourth region 284 and the fifth region 285 are arranged side by side and spaced apart in the x direction. The sixth region 286 is provided between the fourth region 284 and the fifth region 285.

[0034] A second plating 260 is provided in each of the fourth region 284 to the sixth region 286. For ease of explanation, the second plating 260 provided in the fourth region 284 will be referred to as a first opposing plating 261. The second plating 260 provided in the fifth region 285 will be referred to as a second opposing plating 262. The second plating 260 provided in the sixth region 286 will be referred to as a third opposing plating 263. The front view of FIG. 4 is a front view of the terminal 400 as seen from the second terminal surface 400b side.

[0035] The first opposing plating 261 and the second opposing plating 262 correspond to an opposing portion. The third opposing plating 263 corresponds to an intermediate portion.

[0036] 3 to 5, fourth region 284 faces part of first region 281 in the z direction. Fifth region 285 faces part of second region 282 in the z direction. Sixth region 286 faces part of first region 281, part of second region 282, and third region 283 in the z direction. Note that FIG. 5 shows second terminal surface 400b superimposed on semiconductor element 200 to clarify the positional relationship between first uneven portion 263a and first protective portion 241, which will be described later.

[0037] Accordingly, the first opposing plating 261 faces a part of the first emitter electrode 211 in the z direction. The second opposing plating 262 faces a part of the second emitter electrode 212 in the z direction. The third opposing plating 263 faces a part of each of the first emitter electrode 211, the second emitter electrode 212, the first protective portion 241, and the first gate liner 231 in a manner overlapping in the z direction.

[0038] 6, a first uneven portion 263a that is uneven in the z direction is formed on the surface of the third opposing plating 263 on the first protective portion 241 side. The first uneven portion 263a is formed continuously on the surface of the third opposing plating 263 on the first protective portion 241 side. The first uneven portion 263a corresponds to an uneven shape.

[0039] The first uneven portion 263a is created by irradiating a laser onto the surface of the third opposing plating 263 on the first protective portion 241 side. When the laser is irradiated onto the surface of the third opposing plating 263 on the first protective portion 241 side, it melts and vaporizes. Then, this portion becomes concave, forming the first uneven portion 263a on the surface. The third opposing plating 263 has a lower melting point than the terminal 400. A temperature exceeding the melting point of the third opposing plating 263 is applied by the laser. This causes the third opposing plating 263 to melt.

[0040] The third opposing plating 263 has low wettability due to the formation of a first uneven portion 263a on its surface. Therefore, the first uneven portion 263a is less wettable with the solder 300 than the first opposing plating 261 and the second opposing plating 262. More specifically, the first uneven portion 263a is less wettable with a first bonding solder 311 (described below) and a second bonding solder 312 (described below) than the first opposing plating 261 and the second opposing plating 262.

[0041] The third plating 270 also has a second uneven portion 270a that is uneven in a direction perpendicular to the connecting terminal surface 400c, similar to the third opposing plating 263. The second uneven portion 270a is formed continuously on the surface of the third plating 270 on the side away from the connecting terminal surface 400c.

[0042] The third plating 270 has low wettability due to the formation of the second uneven portion 270a on the surface. Therefore, the second uneven portion 270a is less wettable with the solder 300 than the first plating 250, the first opposing plating 261, and the second opposing plating 262. More specifically, the second uneven portion 270a is less wettable with the second solder 320, the first bonding solder 311 described below, and the second bonding solder 312 described below than the first plating 250, the first opposing plating 261, and the second opposing plating 262. Details of the solder 300 will be described later.

[0043] Next, the heat sink will be described. As shown in Fig. 2, the first heat sink 500 has a flat shape with a small thickness in the z direction. The first heat sink 500 is provided on the second main surface 200b side of the semiconductor element 200.

[0044] 1 is connected to the first heat sink 500. The first main terminal 710 is a terminal 700 that is electrically connected to the collector electrode 220 of the semiconductor element 200.

[0045] The first heat sink 500 has a heat dissipation function of dissipating heat from the transistors formed in the semiconductor element 200 to the outside of the semiconductor element 200, and a function of electrically relaying the collector electrode 220 and the first main terminal 710. Like the terminal 400, the first heat sink 500 is formed using a metal member such as copper that has excellent thermal conductivity and electrical conductivity.

[0046] The second heat sink 600 also has a flat shape with a small thickness in the z direction. As shown in FIG.

[0047] A second main terminal 720 is connected to the second heat sink 600. The second main terminal 720 is a terminal 700 that is electrically connected to the emitter electrode 210 of the semiconductor element 200.

[0048] The second heat sink 600 has a heat dissipation function of dissipating heat from the transistors formed in the semiconductor element 200 to the outside of the semiconductor element 200, and a function of electrically relaying the emitter electrode 210 and the second main terminal 720. Like the terminal 400 and the first heat sink 500, the second heat sink 600 is formed using a metal member such as copper that has excellent thermal conductivity and electrical conductivity.

[0049] Next, a description will be given of the solder 300. The solder 300 has a first solder 310, a second solder 320, and a third solder 330. The first solder 310 corresponds to a solder member.

[0050] A first solder 310 is provided between the emitter electrode 210 and the second plating 260. More specifically, the first solder 310 is divided into a first joint solder 311 provided between the first emitter electrode 211 and the first opposing plating 261, and a second joint solder 312 provided between the second emitter electrode 212 and the second opposing plating 262.

[0051] The first emitter electrode 211 and the first opposing plating 261 are electrically and mechanically joined via a first joint solder 311. The second emitter electrode 212 and the second opposing plating 262 are electrically and mechanically joined via a second joint solder 312.

[0052] The second solder 320 is provided between the first plating 250 and the second heat sink 600. The first plating 250 and the second heat sink 600 are electrically and mechanically joined via the second solder 320.

[0053] A third solder 330 is provided between the collector electrode 220 and the first heat sink 500. The collector electrode 220 and the first heat sink 500 are joined together electrically and mechanically via the third solder 330.

[0054] <Contact angle of first solder> As shown in FIGS. 5 and 6, the end of the first uneven portion 263a on the first emitter electrode 211 side is located closer to the first emitter electrode 211 in the x direction than the end of the first protective portion 241 on the first emitter electrode 211 side.

[0055] The end of the first uneven portion 263a on the second emitter electrode 212 side is located closer to the second emitter electrode 212 in the x direction than the end of the first protective portion 241 on the second emitter electrode 212 side.

[0056] The length L1 of the first uneven portion 263a in the x direction is longer than the length L2 of the first protection portion 241 in the x direction.

[0057] More specifically, the entire portion of the first protective portion 241 that faces the terminal 400 in the z direction is included within the projection area of ​​the first concave-convex portion 263a in the z direction.

[0058] As described above, the first uneven portion 263a and the first protective portion 241 are less likely to be wetted by the first bonding solder 311 and the second bonding solder 312, respectively.

[0059] 6, the contact angle between the part of the first bonding solder 311 on the first protective section 241 side and the first emitter electrode 211 is acute. The contact angle between the part of the second bonding solder 312 on the first protective section 241 side and the second emitter electrode 212 is acute.

[0060] 5 and 6, all of the terminals 400 are included within a projection area in the z direction of the semiconductor element 200. More specifically, all of the terminals 400 are included within a projection area in the z direction of a region of the semiconductor element 200 that includes the first emitter electrode 211, the second emitter electrode 212, and the first protective portion 241.

[0061] As described above, each of the four connecting terminal surfaces 400c connecting the first terminal surface 400a and the second terminal surface 400b has a second uneven portion 270a that is difficult to wet with the first joining solder 311, the second joining solder 312, and the second solder 320, respectively.

[0062] 6, the contact angle between the part of the first bonding solder 311 on the second protective section 242 side and the first emitter electrode 211 is acute. The contact angle between the part of the second bonding solder 312 on the second protective section 242 side and the second emitter electrode 212 is acute.

[0063] Each of the first bonding solder 311 and the second bonding solder 312 forms a substantially truncated quadrangular pyramid. That is, the first solder 310 is partitioned into the first bonding solder 311 and the second bonding solder 312 by the first protective portion 241 and the first uneven portion 263a.

[0064] Therefore, the first joint solder 311 and the second joint solder 312 are not easily bridged. The first joint solder 311 and the second joint solder 312 are not easily joined electrically and mechanically.

[0065] <Electrical resistance of the conductive path between the first heat sink and the second heat sink> As shown in FIG. 2, the first heat sink 500 and the second heat sink 600 are electrically connected via the first solder 310 , the semiconductor element 200 , the second solder 320 , the terminal 400 , and the third solder 330 .

[0066] As described above, the first uneven portion 263a is difficult to wet with the first joint solder 311 and the second joint solder 312. The first joint solder 311 and the second joint solder 312 are difficult to electrically and mechanically join to the portion of the terminal where the first uneven portion 263a is provided. Therefore, current does not easily flow between the first terminal surface 400a and the second terminal surface 400b at the portion where the first uneven portion 263a of the terminal 400 is provided. The electrical resistance between the first terminal surface 400a and the second terminal surface 400b is high.

[0067] As a measure to achieve this, the sum of the length L3 in the x direction of the first opposing plating 261 and the length L4 in the x direction of the second opposing plating 262 is made longer than the length L1 in the x direction of the first uneven portion 263a, as shown in Fig. 6. This makes it easier to prevent the electrical resistance between the first terminal surface 400a and the second terminal surface 400b from becoming too high.

[0068] Furthermore, the length L1 in the x direction of the first uneven portion 263a may be shorter than both the length L3 in the x direction of the first opposing plating 261 and the length L4 in the x direction of the second opposing plating 262.

[0069] Second embodiment In the first embodiment, the emitter electrode 210 is divided into two by the first protective portion 241. However, the emitter electrode 210 may be divided into two or more by a plurality of first protective portions 241 extending in the y direction. Accordingly, the first gate liner 231 may be covered and protected by each of the plurality of first protective portions 241.

[0070] As shown in FIGS. 7 and 8, in the second embodiment, each of the first emitter electrode 211 and the second emitter electrode 212 is further divided into two in the x direction by one of the multiple first protective portions 241.

[0071] A first gate liner 231 is disposed in a first protective portion 241 between one of the first emitter electrodes 211 divided into two in the x direction and the other first emitter electrode 211 .

[0072] Similarly, a first gate liner 231 is disposed in a first protective portion 241 between one of the two second emitter electrodes 212 partitioned in the x direction and the other second emitter electrode 212 .

[0073] Furthermore, as shown in Fig. 8, a plurality of first uneven portions 263a that are uneven in the z direction and continuous are formed on the second terminal surface 400b at portions facing in the z direction to the plurality of first protective portions 241. Note that Fig. 8 shows the second terminal surface 400b superimposed on the semiconductor element 200 in order to clarify the positional relationship between the first uneven portions 263a and the first protective portions 241.

[0074] The length L1 in the x direction of each of the multiple first uneven portions 263a is longer than the length L2 in the x direction of each of the multiple first protection portions 241. Therefore, the second embodiment can achieve the same effects as the first embodiment.

[0075] In the second embodiment, an example in which the emitter electrode 210 is divided into four in the x direction by the multiple first protective portions 241 has been specifically described, but the number of sections into which the emitter electrode 210 is divided is not limited to four. The emitter electrode 210 may be divided into four or more sections in the x direction.

[0076] Third embodiment 9 and 10, in addition to the first protective portion 241 continuing in the y direction, a first protective portion 241 continuing in the x direction may be provided. Each of the first emitter electrode 211 and the second emitter electrode 212 may be further divided into two in the y direction by the first protective portion 241 continuing in the x direction. Accordingly, the first gate liner 231 may be covered and protected by the first protective portion 241 continuing in the x direction.

[0077] 10, a first uneven portion 263a continuing in the x direction and a first uneven portion 263a continuing in the y direction are formed at portions of the second terminal surface 400b facing each other in the z direction between the first protective portion 241 continuing in the x direction and the first protective portion 241 continuing in the y direction. Note that in order to clarify the positional relationship between the first uneven portion 263a and the first protective portion 241, FIG. 10 shows the second terminal surface 400b superimposed on the semiconductor element 200.

[0078] The length L1 in the x direction of the first uneven portion 263a continuing in the y direction is longer than the length L2 in the x direction of the first protection portion 241 continuing in the y direction among the first protection portions 241 continuing in the y direction. The length L5 in the y direction of the first uneven portion 263a continuing in the x direction is longer than the length L6 of both ends in the y direction of the first protection portion 241 continuing in the x direction. Therefore, the third embodiment can also achieve the same effects as the first embodiment.

[0079] (Fourth embodiment) In the first to third embodiments, the embodiment has been described in which the entire portion of the first protective portion 241 facing the terminal 400 is included within the z-direction projection area of ​​the first uneven portion 263a. However, as shown in the fourth embodiment in Fig. 11 and Fig. 12, the entire first protective portion 241 may be included within the z-direction projection area of ​​the first uneven portion 263a. Note that Fig. 12 shows a diagram in which the contours of the first emitter electrode 211 and the second emitter electrode 212 are superimposed on the second terminal surface 400b.

[0080] In this case, the entire semiconductor element 200 is included in the z-direction projection area of ​​the terminal 400. Furthermore, a fourth opposing plating 264 that annularly surrounds the area consisting of the first opposing plating 261, the second opposing plating 262, and the third opposing plating 263 is provided on the second terminal surface 400b.

[0081] A third uneven portion 264a that is uneven in the z direction is formed on the fourth opposing plating 264. The third uneven portion 264a is formed continuously on the surface of the fourth opposing plating 264 on the second protective portion 242 side. The third uneven portion 264a is less likely to be wetted by the first bonding solder 311 and the second bonding solder 312 than the first opposing plating 261 and the second opposing plating 262, respectively.

[0082] For this reason, the contact angle between the connecting terminal surface 400c of the first bonding solder 311 and the first emitter electrode 211 is an acute angle. The contact angle between the connecting terminal surface 400c of the second bonding solder 312 and the second emitter electrode 212 is an acute angle. Even if the second uneven portion 270a is not formed on the connecting terminal surface 400c, the first bonding solder 311 and the second bonding solder 312 each form a substantially quadrangular pyramid shape. The fourth embodiment can also achieve the same effects as the first embodiment.

[0083] <Action and effect> As described above, the first uneven portion 263a and the first protective portion 241 are difficult to wet with the first bonding solder 311 and the second bonding solder 312, respectively, and the first solder 310 is partitioned into the first bonding solder 311 and the second bonding solder 312.

[0084] Therefore, the first bonding solder 311 and the second bonding solder 312 are less likely to be bridged between the semiconductor element 200 and the terminal 400. Accordingly, localized thinning of the thickness of the first solder 310 in the z direction is more likely to be suppressed.

[0085] This makes it easier to prevent stress concentration on the first solder 310. It also makes it easier to prevent cracks from occurring in the first solder 310.

[0086] As described above, the entire portion of the first protective portion 241 facing the terminal 400 in the z direction is included within the projection area of ​​the first uneven portion 263a in the z direction.

[0087] The length L1 of the first uneven portion 263a in the x direction is longer than the length L2 of the first protection portion 241 in the x direction.

[0088] As a result, the contact angle between the portion of the first bonding solder 311 on the first protective portion 241 side and the first emitter electrode 211, and the contact angle between the portion of the second bonding solder 312 on the first protective portion 241 side and the second emitter electrode 212 are both acute angles.

[0089] Furthermore, when the contact angle between the semiconductor element 200 and the solder 300 provided on the semiconductor element 200 is an acute angle, the stress applied to the semiconductor element 200 tends to be smaller than when the contact angle is an obtuse angle.

[0090] This tends to reduce the stress applied from the first bonding solder 311 to the first emitter electrode 211. The occurrence of cracks in the first emitter electrode 211 is also likely to be suppressed.

[0091] Similarly, the stress applied from the second bonding solder 312 to the second emitter electrode 212 is likely to be small. The occurrence of cracks in the second emitter electrode 212 is likely to be suppressed.

[0092] In summary, the stress applied to the emitter electrode 210 from the first solder 310 is more likely to be reduced. The occurrence of cracks in the emitter electrode 210 is more likely to be suppressed.

[0093] As described above, the first uneven portion 263a is difficult to wet with the first joint solder 311 and the second joint solder 312. If there is an area that is not wetted by the first solder 310, such as the first uneven portion 263a, the electrical resistance and thermal resistance between the first terminal surface 400a and the second terminal surface 400b will be high.

[0094] To achieve this, the sum of the length L3 in the x direction of the first opposing plating 261 and the length L4 in the x direction of the second opposing plating 262 is made longer than the length L1 in the x direction of the first uneven portion 263a. This makes it easier to prevent the electrical resistance and thermal resistance between the first terminal surface 400a and the second terminal surface 400b from becoming too high.

[0095] As described above, the surface of the third plating 270 away from the connecting terminal surface 400c has the second uneven portion 270a that is difficult to wet with the first solder 310 and the second solder 320.

[0096] Therefore, the first solder 310 and the second solder 320 are unlikely to wet and spread from one side to the other on the connection terminal surface 400c.

[0097] Accordingly, for example, the second solder 320 flows into the first solder 310 side, and the amount of the first solder 310 increases, which makes it easier to prevent cracks from occurring in the emitter electrode 210 due to stress.

[0098] (First Modification) In the embodiments described above, the contact angles of the first bonding solder 311 and the second bonding solder 312 with the emitter electrode 210 have been described with focus on the length relationship between the x-direction length L1 of the first uneven portion 263a and the x-direction length L2 of the first protective portion 241.

[0099] However, as shown in FIG. 13, the x-direction length L1 of the first uneven portion 263a may be greater than or equal to the sum of twice the z-direction separation distance L7 between the first uneven portion 263a and the first protective portion 241 and the x-direction length L2 of the first protective portion 241.

[0100] This makes it easier for the contact angle between the portion of the first bonding solder 311 on the first protective section 241 side and the first emitter electrode 211 to be 45 degrees or less. The contact angle between the portion of the second bonding solder 312 on the first protective section 241 side and the second emitter electrode 212 to be 45 degrees or less.

[0101] Furthermore, as shown in FIG. 14, as the contact angle between the semiconductor element 200 and the solder 300 provided on the semiconductor element 200 becomes smaller, the life of the semiconductor element 200 tends to be extended.

[0102] According to this, when the contact angle between the first bonding solder 311 and the first emitter electrode 211 and the contact angle between the second bonding solder 312 and the second emitter electrode 212 are 45 degrees or less, the life of the semiconductor element 200 is likely to be extended by about one order of magnitude.

[0103] (Second Modification) In the embodiments described so far, a configuration has been described in which the portion of the first protective portion 241 facing the terminal 400 is included in the z-direction projection area of ​​the first uneven portion 263a. However, the first protective portion 241 does not have to be included in the z-direction projection area of ​​the first uneven portion 263a as shown in Fig. 15. As shown in Fig. 15, the first uneven portion 263a may be partially formed at one end of the third opposing plating 263 on the first opposing plating 261 side and at the other end on the second opposing plating 262 side.

[0104] 15, it is sufficient that the first solder 310 is divided into the first joint solder 311 and the second joint solder 312 by the first protective portion 241 and the first uneven portion 263a. If the first joint solder 311 and the second joint solder 312 are divided, it is easier to prevent the thickness of the first solder 310 from becoming locally thin in the z direction.

[0105] (Third Modification) In the embodiments described so far, the x-direction length L1 of the first uneven portion 263a is longer than the x-direction length L2 of the first protection portion 241. However, as shown in Fig. 16, the x-direction length of the first uneven portion 263a may be the same as the x-direction length of the first protection portion 241.

[0106] In this case, the contact angle between the portion of the first bonding solder 311 on the first protective section 241 side and the first emitter electrode 211 is a right angle. The contact angle between the portion of the second bonding solder 312 on the first protective section 241 side and the second emitter electrode 212 is a right angle. The first bonding solder 311 and the second bonding solder 312 are less likely to be bridged between the semiconductor element 200 and the terminal 400. Localized thinning of the thickness of the first solder 310 in the z direction is more likely to be suppressed.

[0107] (Fourth Modification) 17, the length L1 in the x direction of the first uneven portion 263a may be shorter than the length L2 in the x direction of the first protective portion 241. Even in this case, the first bonding solder 311 and the second bonding solder 312 are less likely to be bridged between the semiconductor element 200 and the terminal 400. It is easier to prevent the thickness of the first solder 310 from becoming locally thin in the z direction.

[0108] (Fifth Modification) Although not shown, a part of the first protective portion 241 may be included within the z-direction projection area of ​​the first uneven portion 263a. Accordingly, for example, the contact angle between the part of the first bonding solder 311 on the first protective portion 241 side and the first emitter electrode 211 may be an acute angle, and the contact angle between the part of the second bonding solder 312 on the first protective portion 241 side and the second emitter electrode 212 may be an obtuse angle.

[0109] (Sixth Modification) Although not shown, a coating film containing polyimide or the like that is difficult to wet with solder 300 may be provided on second terminal surface 400b instead of third opposing plating 263. It is sufficient that first solder 310 is partitioned into first bonding solder 311 and second bonding solder 312 by the coating film and first protective portion 241.

[0110] (Other variations) Although the present disclosure has been described based on the embodiment, it is understood that the present disclosure is not limited to the embodiment or structure. The present disclosure also includes various modifications and modifications within the equivalent range. In addition, although various combinations and forms are shown in the present disclosure, other combinations and forms including only one element, more than one, or less than one element are also within the scope and concept of the present disclosure. [Explanation of symbols]

[0111] 200...semiconductor element, 200a...first main surface, 200b...second main surface, 210...emitter electrode, 220...collector electrode, 230...gate liner, 240...protective film, 241...first protective portion, 261...first opposing plating, 262...second opposing plating, 263...third opposing plating, 263a...first uneven portion, 310...first solder, 400...terminal, 400b...second terminal surface

Claims

1. A semiconductor element (200) including a first main electrode (210) formed on a first main surface (200a), a second main electrode (220) formed on a second main surface (200b) on the back side of the first main surface in the plate thickness direction, and a protective film (240) provided on the first main surface and including a partition portion (241) that partitions the first main electrode into a plurality of regions; A conductive member (400) including a plurality of facing portions (261, 262) facing the first main electrode in the plate thickness direction, and an intervening portion (263) provided between the plurality of facing portions in the arrangement direction of the plurality of facing portions, on an opposing surface (400b) facing the first main surface in the plate thickness direction; a solder member (310) provided between the first main electrode and the plurality of opposing portions and partitioned into a plurality of regions by the partition portion and the interposition portion; the partition portion is less wettable with the solder material than the first main electrode; the intermediate portion is less wettable with the solder member than the facing portion, The semiconductor device has an uneven portion (264a) formed on the opposing surface, which surrounds the intervening portion and the multiple opposing portions in a ring shape, and which is less likely to be wetted by the solder material than the opposing portions and is uneven in the plate thickness direction.

2. a length of the intervening portion in the arrangement direction is longer than a length of the partition portion in the arrangement direction; The semiconductor device according to claim 1 , wherein the partition portion is included in a projected area of ​​the intermediate portion in the thickness direction.

3. 3 . The semiconductor device according to claim 1 , wherein a sum of lengths of the facing portions in the arrangement direction is longer than a length of the intervening portions in the arrangement direction.

4. The semiconductor device according to any one of claims 1 to 3, wherein the length of the intervening portion in the arrangement direction is equal to or greater than the sum of twice the distance between the intervening portion and the partition portion in the plate thickness direction and the length of the partition portion in the arrangement direction.

5. The semiconductor device according to any one of claims 1 to 4, wherein an uneven shape (263a) that is uneven in the plate thickness direction is formed in a portion of the interposed portion on the first main surface side.

6. A signal wiring (230) is provided on the semiconductor element to transmit a signal and extend along the first main surface, 6. The semiconductor device according to claim 1, wherein a part of the signal wiring is covered by the partition portion.

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