Composition for forming protective film, protective film, method for forming protective film, and method for manufacturing substrate

Abstract

Provided are a highly coatable composition for forming a protective film, a protective film, a method for forming a protective film, and a method for manufacturing a patterned substrate.　The present invention provides a composition for forming a protective film, said composition forming a protective film only at a peripheral section of a substrate. The composition contains: a compound having an aromatic ring; and a solvent. The solvent includes a first solvent with a standard boiling point of 156°C (inclusive) to 300°C (exclusive).

Description

[Technical field]

[0001] The present invention relates to a composition for forming a protective film, a protective film, a method for forming a protective film, and a method for producing a patterned substrate. [Background technology]

[0002] In the manufacture of semiconductor devices, for example, a multi-layer resist process is used in which a resist film laminated on a substrate via a resist underlayer film such as an organic underlayer film or a silicon-containing film is exposed and developed to form a resist pattern. In this process, the resist underlayer film is etched using the resist pattern as a mask, and the substrate is further etched using the resulting resist underlayer film pattern as a mask, thereby forming a desired pattern on the substrate and obtaining a patterned substrate (see, for example, Patent Document 1).

[0003] It has also been proposed to form a protective film on the peripheral edge of the substrate (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2004-177668 A [Patent Document 2] Patent Publication No. 2016-136572 Summary of the Invention [Problem to be solved by the invention]

[0005] A protective film-forming composition having excellent coatability is required for the protective film on the peripheral edge of the substrate.

[0006] An object of the present invention is to provide a composition for forming a protective film, which has excellent coatability, a protective film, a method for forming a protective film, and a method for producing a patterned substrate. [Means for solving the problem]

[0007] In one embodiment, the present invention comprises: A composition for forming a protective film for forming a protective film only on a peripheral portion of a substrate, A compound having an aromatic ring (hereinafter also referred to as "compound [A]"), Solvent (hereinafter also referred to as "[B] solvent") Contains The solvent [A] includes a solvent [B] having a normal boiling point of 156°C or more and less than 300°C. The present invention relates to a composition for forming a protective film.

[0008] In one embodiment, the present invention relates to a protective film formed from the composition for forming a protective film.

[0009] On the other hand, in one embodiment, the present invention provides A step of directly or indirectly applying the composition for forming a protective film according to any one of claims 1 to 12 only to the peripheral portion of a substrate; The present invention relates to a method for forming a protective film, comprising the steps of:

[0010] On the other hand, in one embodiment, the present invention provides A step of directly or indirectly applying the protective film-forming composition according to any one of claims 1 to 12 only to the peripheral portion of a substrate; forming a resist pattern directly or indirectly on the substrate having the protective film formed by the coating process; a step of performing etching using the resist pattern as a mask; The present invention relates to a method for manufacturing a patterned substrate, comprising:

[0011] In another embodiment, the manufacturing method includes: Prior to the resist pattern forming step, A step of directly or indirectly forming an organic underlayer film on the substrate having the protective film formed by the coating step. It may further include:

[0012] In another embodiment, the manufacturing method includes: A step of forming a silicon-containing film directly or indirectly on the substrate prior to the resist pattern forming step. It may further include: Effect of the Invention

[0013] According to the composition for forming a protective film of the present invention, a protective film having excellent coatability can be formed in the peripheral portion of the substrate. The protective film of the present invention has excellent coatability in the peripheral portion of the substrate. According to the method for forming a protective film of the present invention, a protective film having excellent coatability in the peripheral portion of the substrate can be obtained. According to the method for producing a patterned substrate of the present invention, a protective film having excellent coatability in the peripheral portion of the substrate can be obtained, and thus a substrate having an excellent pattern shape can be obtained. Therefore, these can be suitably used in the production of semiconductor devices, which are expected to become even more miniaturized in the future. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, the protective film-forming composition, the protective film, the method for forming the protective film, and the method for producing a patterned substrate according to the embodiments of the present invention will be described in detail.

[0015] <Protective film forming composition> The protective film-forming composition, which is a protective film-forming composition for forming a protective film only on the peripheral portion of a substrate, contains a compound [A] and a solvent [B]. The protective film-forming composition may contain a second solvent (hereinafter also referred to as "solvent [C]") having a normal boiling point of less than 156°C, and other optional components, within a range that does not impair the effects of the present invention.

[0016] The protective film-forming composition is used to form a protective film only on the peripheral edge portion of a substrate.

[0017] The peripheral portion of the substrate refers to, for example, a portion of the substrate that is within 3.0 cm in length from the outer edge to the center of the substrate, and the length from the outer edge to the center of the substrate can be 2.0 cm, 1.0 cm, or 0.5 cm.

[0018] Examples of the substrate include metal or semimetal substrates such as silicon substrates, aluminum substrates, nickel substrates, chromium substrates, molybdenum substrates, tungsten substrates, copper substrates, tantalum substrates, and titanium substrates, among which silicon substrates are preferred. The substrate may be a substrate on which a silicon nitride film, an alumina film, a silicon dioxide film, a tantalum nitride film, a titanium nitride film, or the like is formed.

[0019] [[A] compound] The compound [A] is a compound having an aromatic ring other than the solvent. The compound [A] is not particularly limited as long as it has an aromatic ring. The compound [A] can be used alone or in combination of two or more kinds.

[0020] Examples of the aromatic ring include: Examples of aromatic carbocyclic rings include a benzene ring, a naphthalene ring, an anthracene ring, an indene ring, a pyrene ring, a fluorenylidene biphenyl ring, and a fluorenylidene binaphthalene ring, and aromatic heterocyclic rings include a furan ring, a pyrrole ring, a thiophene ring, a phosphole ring, a pyrazole ring, an oxazole ring, an isoxazole ring, a thiazole ring, a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, and a triazine ring. Among these, aromatic carbocyclic rings are preferred.

[0021] Examples of the compound [A] include resins having an aromatic ring in the main chain, resins having no aromatic ring in the main chain but having an aromatic ring in a side chain, and aromatic ring-containing compounds having a molecular weight of 300 or more and 3,000 or less.

[0022] Here, "resin" refers to a compound having two or more structural units. "Aromatic ring-containing compound" refers to a compound having one structural unit. "Main chain" refers to the longest chain of atoms in a resin. "Side chain" refers to any chain other than the longest chain of atoms in a resin.

[0023] Examples of the resin include polycondensation compounds and compounds obtained by reactions other than polycondensation.

[0024] Examples of the resin include novolac resin, resol resin, styrene resin, acenaphthylene resin, and triazine resin.

[0025] (Novolac resin) Novolac resins are resins obtained by reacting a phenolic compound with an aldehyde or a divinyl compound using an acid catalyst. A plurality of phenolic compounds and aldehydes or divinyl compounds may be mixed and reacted.

[0026] Examples of the phenolic compound include phenols such as phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis(4-hydroxyphenyl)fluorene, and 9,9-bis(3-hydroxyphenyl)fluorene; naphthols such as α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, and 9,9-bis(6-hydroxynaphthyl)fluorene; anthrols such as 9-anthrol; and pyrenols such as 1-hydroxypyrene and 2-hydroxypyrene.

[0027] Examples of aldehydes include aldehydes such as formaldehyde, benzaldehyde, 1-naphthaldehyde, 2-naphthaldehyde, and 1-formylpyrene, and aldehyde sources such as paraformaldehyde and trioxane.

[0028] Examples of the divinyl compounds include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnoborn-2-ene, divinylpyrene, limonene, and 5-vinylnorbornadiene.

[0029] Examples of novolak resins include resins having a structural unit derived from dihydroxynaphthalene and formaldehyde, resins having a structural unit derived from fluorene bisphenol and formaldehyde, resins having a structural unit derived from fluorene bisnaphthol and formaldehyde, resins having a structural unit derived from hydroxypyrene and formaldehyde, resins having a structural unit derived from a phenol compound and formylpyrene, and resins in which some or all of the hydrogen atoms of the phenolic hydroxyl groups of these resins have been substituted with propargyl groups or the like.

[0030] (Resol resin) A resol resin is a resin obtained by reacting a phenolic compound with an aldehyde using an alkaline catalyst.

[0031] (styrene resin) The styrene resin is a resin having a structural unit derived from a compound having an aromatic ring and a polymerizable carbon-carbon double bond. In addition to the above structural units, the styrene resin may have a structural unit derived from an acrylic monomer, a vinyl ether, or the like.

[0032] Examples of the styrene resin include polystyrene, polyvinylnaphthalene, polyhydroxystyrene, polyphenyl(meth)acrylate, and combinations of these resins.

[0033] (acenaphthylene resin) The acenaphthylene resin is a resin having a structural unit derived from a compound having an acenaphthylene skeleton.

[0034] As the acenaphthylene resin, from the viewpoint of further improving the coatability of the protective film, a copolymer of acenaphthylene and hydroxymethylacenaphthylene is preferred.

[0035] (Triazine resin) The triazine resin is a resin having a structural unit derived from a compound having a triazine skeleton.

[0036] Examples of the compound having a triazine skeleton include a melamine compound and a cyanuric acid compound.

[0037] When the compound [A] is a novolac resin, a resol resin, a styrene resin, an acenaphthylene resin, or a triazine resin, the weight average molecular weight (Mw) of the compound [A] in terms of polystyrene measured by gel permeation chromatography (GPC) is preferably more than 2,000, more preferably 3,000 or more, and even more preferably 5,000 or more. Moreover, the Mw is preferably 100,000 or less, more preferably 50,000 or less, and even more preferably 30,000 or less.

[0038] (Calixarene resin) Calixarene resins are cyclic oligomers in which multiple aromatic rings to which hydroxy groups are bonded are bonded in a ring shape via hydrocarbon groups, or in which some or all of the hydrogen atoms of the hydroxy groups, aromatic rings, and hydrocarbon groups have been substituted.

[0039] Examples of calixarene resins include cyclic 4-12-mers formed from a phenolic compound such as phenol or naphthol and formaldehyde, cyclic 4-12-mers formed from a phenolic compound such as phenol or naphthol and a benzaldehyde compound, and resins in which the hydrogen atoms of the phenolic hydroxyl groups in these cyclic compounds are substituted with propargyl groups or the like.

[0040] (Aromatic ring-containing compounds with molecular weights of 300 to 3,000) The aromatic ring-containing compound is a compound that has an aromatic ring and has a molecular weight of 300 to 3,000. When the aromatic ring-containing compound has a molecular weight distribution, the molecular weight of the aromatic ring-containing compound is, for example, a weight average molecular weight (Mw) calculated in terms of polystyrene by gel permeation chromatography (GPC).

[0041] Examples of the aromatic ring-containing compound include a compound having a fluorenebisphenol skeleton, a compound having a spiroindene skeleton, a compound having a truxene skeleton, and a compound having a triphenylbenzene skeleton.

[0042] The lower limit of the content of the polymer [A] in the composition is preferably 2% by mass, more preferably 4% by mass, even more preferably 5% by mass, and particularly preferably 6% by mass, based on the total mass of the polymer [A] and the solvent [B].The upper limit of the content is preferably 30% by mass, more preferably 25% by mass, even more preferably 20% by mass, and particularly preferably 18% by mass, based on the total mass of the polymer [A] and the solvent [B].

[0043] [Method of synthesis of compound [A]] The compound [A] may be synthesized according to a known method, or a commercially available product may be used.

[0044] [solvent] The solvent of the present invention dissolves or disperses the [A] compound and any optional components contained as necessary. The solvent includes a first solvent (hereinafter also referred to as "[B] solvent") having a standard boiling point of 156°C or more and less than 300°C. The solvent may further include a second solvent (hereinafter also referred to as "[C] solvent") having a standard boiling point of less than 156°C. The solvent may include other solvents other than the [B] solvent and the [C] solvent, as long as the effects of the present invention are not impaired. Each of the components of the [B] solvent, the [C] solvent, and the other solvents may be used alone or in combination of two or more. Each component will be described in detail below.

[0045] For example, the content of the solvent in the composition for forming a protective film is preferably from 10% by mass to 90% by mass, and can also be from 20% by mass to 80% by mass.

[0046] [[B] Solvent] The solvent [B] has a normal boiling point of 156° C. or more and less than 300° C. By including the solvent [B], which is a high-boiling point component, the evaporation of the solvent during heating of the coating film is suppressed, and the fluidity of the components of the coating film containing the solvent is improved. As a result, the coatability of the protective film can be improved.

[0047] The lower limit of the normal boiling point of the solvent [B] is preferably 170° C., more preferably 180° C., even more preferably 200° C., and particularly preferably 210° C. By setting the normal boiling point of the first solvent [B] to the above-mentioned lower limit or higher, the coatability of the protective film can be more effectively improved.

[0048] For example, the normal boiling point of the solvent [B] is preferably 205° C. or higher.

[0049] The upper limit of the normal boiling point of the solvent [B] is preferably 250° C., more preferably 240° C., and particularly preferably 230° C. By setting the normal boiling point of the first solvent [B] to the above upper limit or less, it is possible to reduce the amount of solvent residue after the formation of the protective film, and it is possible to further improve the solvent resistance.

[0050] [B] Examples of the solvent component include esters, alcohols, ethers, carbonates, ketones, amide solvents, etc. The temperature (°C) in parentheses for each solvent listed below indicates the standard boiling point.

[0051] Examples of the esters include: Carboxylic acid esters include acetate esters such as 2-ethylbutyl acetate (160°C), 2-ethylhexyl acetate (199°C), benzyl acetate (212°C), cyclohexyl acetate (172°C), methylcyclohexyl acetate (201°C), and n-nonyl acetate (208°C); acetoacetates such as methyl acetoacetate (169°C) and ethyl acetoacetate (181°C); propionates such as iso-amyl propionate (156°C); and cyano esters such as diethyl oxalate (185°C) and di-n-butyl oxalate (239°C). Examples of such esters include oxalate esters, lactate esters such as n-butyl lactate (185°C), malonate esters such as diethyl malonate (199°C), phthalate esters such as dimethyl phthalate (283°C), lactones such as β-propiolactone (162°C), γ-butyrolactone (204°C), γ-valerolactone (207°C), γ-undecalactone (286°C), and alkylene glycol diacetates such as 1,6-diacetoxyhexane (260°C) and 1,3-butylene glycol diacetate (232°C).

[0052] Examples of the alcohols include: Monoalcohols include 3-methoxybutanol (157°C), n-hexanol (157°C), n-octanol (194°C), sec-octanol (174°C), n-nonyl alcohol (215°C), n-decanol (228°C), phenol (182°C), cyclohexanol (161°C), and benzyl alcohol (205°C). Polyhydric alcohols include ethylene glycol (197°C), 1,2-propylene glycol (188°C), 1,3-butylene glycol (208°C), 2,4-pentanediol (201°C), 2-methyl-2,4-pentanediol (196°C), 2,5-hexanediol (216°C), triethylene glycol (165°C), dipropylene glycol (230°C), glycerin (290°C), etc. Polyhydric alcohol partial ethers: ethylene glycol monobutyl ether (171°C), ethylene glycol monophenyl ether (244°C), diethylene glycol monomethyl ether (194°C), diethylene glycol monoethyl ether (202°C), triethylene glycol monomethyl ether (249°C), diethylene glycol monoisopropyl ether (207°C), diethylene glycol monobutyl ether (231°C), triethylene glycol monobutyl ether (271°C), ethylene glycol monoisobutyl ether (161°C), diethylene glycol monoisobutyl ether (220°C), ethylene glycol monohexyl ether (208°C), diethylene glycol monohexyl ether (259°C), ethylene glycol monoisopropyl ether (207°C), diethylene glycol monobutyl ether (231°C), triethylene glycol monobutyl ether (271°C), Examples of the propylene glycol monoesters include ethylene glycol mono 2-ethylhexyl ether (229°C), diethylene glycol mono 2-ethylhexyl ether (272°C), ethylene glycol monoallyl ether (159°C), diethylene glycol monophenyl ether (283°C), ethylene glycol monobenzyl ether (256°C), diethylene glycol monobenzyl ether (302°C), dipropylene glycol monomethyl ether (187°C), tripropylene glycol monomethyl ether (242°C), dipropylene glycol monopropyl ether (212°C), propylene glycol monobutyl ether (170°C), dipropylene glycol monobutyl ether (231°C), and propylene glycol monophenyl ether (243°C).

[0053] Examples of the ethers include: Dialkylene glycol monoalkyl ether acetates include dipropylene glycol monomethyl ether acetate (213°C), diethylene glycol monoethyl ether acetate (217°C), and diethylene glycol monobutyl ether acetate (247°C). Alkylene glycol monoalkyl ether acetates include butylene glycol monomethyl ether acetate (172°C), ethylene glycol monobutyl ether acetate (188°C), etc. Dialkylene glycol dialkyl ethers include diethylene glycol dimethyl ether (162°C), diethylene glycol methyl ethyl ether (176°C), diethylene glycol diethyl ether (189°C), diethylene glycol dibutyl ether (255°C), and dipropylene glycol dimethyl ether (171°C). Trialkylene glycol dialkyl ethers include triethylene glycol dimethyl ether (216°C), etc. Tetraalkylene glycol dialkyl ethers include tetraethylene glycol dimethyl ether (275°C), etc. Dihydrocarbon ethers include diisopentyl ether (171°C), anisole (155°C), ethyl benzyl ether (189°C), diphenyl ether (259°C), dibenzyl ether (297°C), and dihexyl ether (226°C). Examples of cyclic ethers include 1,8-cineole (176° C.).

[0054] Examples of the carbonates include ethylene carbonate (244° C.) and propylene carbonate (242° C.).

[0055] Examples of the ketones include ethyl amyl ketone (167° C.), dibutyl ketone (186° C.), and diamyl ketone (228° C.).

[0056] Examples of the amide solvent include N-methylpyrrolidone (204° C.), N,N-dimethylacetamide (165° C.), formamide (210° C.), N-ethylacetamide (206° C.), and N-methylacetamide (206° C.).

[0057] Other examples of the (A2) solvent include furfural (162° C.), dimethyl sulfoxide (189° C.), sulfolane (287° C.), succinonitrile (265° C.), and nitrobenzene (211° C.).

[0058] Among these, esters, alcohols, ethers, carbonates or combinations thereof are preferred, with carboxylic acid esters, monoalcohols, polyhydric alcohols, polyhydric alcohol partial ethers, dialkylene glycol monoalkyl ether acetates and dialkylene glycol dialkyl ethers being more preferred, with γ-butyrolactone, benzyl alcohol, dipropylene glycol dimethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monobutyl ether, tripropylene glycol monomethyl ether, dipropylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate and propylene carbonate being even more preferred, with dipropylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate being particularly preferred.

[0059] By using the above solvent as the solvent [B]1, the coatability of the protective film can be improved.

[0060] The lower limit of the relative evaporation rate of the solvent [B] is preferably 0.01, more preferably 0.05, and even more preferably 0.1, when the evaporation rate of butyl acetate is taken as 100. By setting the value of the relative evaporation rate of the solvent [B] to be equal to or higher than the above lower limit, it is possible to reduce the amount of solvent residue after the formation of the protective film.

[0061] The upper limit of the relative evaporation rate of solvent [B] is preferably 10, more preferably 8, still more preferably 6, and particularly preferably 4, when the evaporation rate of butyl acetate is taken as 100. By setting the relative evaporation rate of solvent [B] to the above upper limit or less, evaporation of the solvent during heating of the coating film is suppressed, and the fluidity of the components of the coating film including solvent [B] is further improved, thereby making it possible to further improve coatability.

[0062] The "relative evaporation rate" refers to the evaporation rate measured in accordance with ASTM-D3539 under conditions of 25°C and 1 atm.

[0063] Examples of the solvent [B] having a relative evaporation rate value within the above range (hereinafter, the numerical value in parentheses for each solvent indicates the relative evaporation rate value when butyl acetate is taken as 100) include propylene glycol monopropyl ether (21), propylene glycol monobutyl ether (7), dipropylene glycol monomethyl ether acetate (1.5), diethylene glycol monoethyl ether acetate (1), diethylene glycol monobutyl ether acetate (less than 1), dipropylene glycol monomethyl ether (3), dipropylene glycol monobutyl ether (1), tripropylene glycol monomethyl ether (less than 1), γ-butyrolactone (less than 1), and the like.

[0064] The viscosity of the solvent [B] is preferably 0.8 mPa s or more and 10.0 mPa s or less. By setting the viscosity of the first solvent [B] within this range, the fluidity of the coating film constituent components including the solvent [B] during heating of the coating film is further improved, and therefore the coatability can be further improved.

[0065] The term "viscosity" refers to the difficulty of a substance's liquid (fluid) flow, and is also called the viscosity coefficient. Viscosity can be measured at 25°C as described in the Solvent Handbook or other sources. For the viscosity of a solvent not described in the Solvent Handbook, the value is measured at 25°C according to the method described in JIS-Z8803:2011.

[0066] The lower limit of the viscosity of the solvent (B) is preferably 1.0 mPa·s, and more preferably 1.5 mPa·s. The upper limit of the viscosity of the solvent [B] is preferably 8.0 mPa·s, more preferably 6.0 mPa·s, even more preferably 5.0 mPa·s, and particularly preferably 3.5 mPa·s. By setting the viscosity of the solvent [B] within the above range, the fluidity of the solvent [B] is further improved, and therefore the coatability can be further improved.

[0067] Examples of the solvent [B] having a viscosity in the above range (hereinafter, the numerical value in parentheses for each solvent indicates the viscosity value at 25°C) include dipropylene glycol monomethyl ether acetate (1.7 mPa·s), diethylene glycol monoethyl ether acetate (2.5 mPa·s), diethylene glycol monobutyl ether acetate (3.1 mPa·s), dipropylene glycol dimethyl ether (1.0 mPa·s), dipropylene glycol monomethyl ether (3.6 mPa·s), dipropylene glycol monobutyl ether acetate (3.1 mPa·s), dipropylene glycol dimethyl ether (1.0 mPa·s), dipropylene glycol monomethyl ether (3.1 mPa·s), dipropylene glycol monobutyl ether acetate ... Examples of such alkyl ethers include ethyl ether (4.5 mPa·s), tripropylene glycol monomethyl ether (5.3 mPa·s), γ-butyrolactone (1.8 mPa·s), propylene carbonate (2.3 mPa·s), tetraethylene glycol dimethyl ether (3.8 mPa·s), 1,6-diacetoxyhexane (3.9 mPa·s), dipropylene glycol (20 mPa·s), and 1,3-butylene glycol diacetate (2.9 mPa·s).

[0068] The content of the solvent [B] in the solvent in the protective film-forming composition can be, for example, 0.1% by mass or more and less than 100% by mass. The lower limit of the content is more preferably 10% by mass, even more preferably 30% by mass, particularly preferably 40% by mass, and even more particularly preferably 45% by mass. By making the content of the solvent [B] equal to or more than the lower limit, the coatability can be further improved. Moreover, the upper limit of the content is more preferably 80% by mass, even more preferably 70% by mass, particularly preferably 60% by mass, and even more particularly preferably 55% by mass. By making the content of the solvent [B] equal to or less than the upper limit, the coatability can be further improved.

[0069] [[C] Solvent] [C] The solvent is a solvent having a normal boiling point of less than 156°C.

[0070] The upper limit of the standard boiling point of the solvent [C] is preferably 155° C., more preferably 147° C. By setting the standard boiling point of the solvent [C] to the above upper limit or lower, the solubility of the compound [A] can be improved. The lower limit of the standard boiling point of the solvent [C] is preferably 100° C., more preferably 120° C. By setting the standard boiling point of the solvent [C] to the above lower limit or higher, the solubility of the compound [A] and other optional components can be improved, and the storage stability of the protective film-forming composition can be improved.

[0071] [C] Solvents (the temperature (℃) in parentheses indicates the standard boiling point) include, for example, As monoalcohols, methanol (65°C), ethanol (78°C), n-propanol (97°C), iso-propanol (82°C), n-butanol (117°C), iso-butanol (108°C), sec-butanol (99°C), tert-butanol (82°C), n-pentanol (138°C), iso-pentanol (132°C), 2-methylbutanol (136°C), sec-pentanol (118°C), tert-pentanol (102°C), 2-methylpentanol (148°C), 2-ethylbutanol (146°C), etc. Carboxylic acid esters include propionate esters such as iso-butyl propionate (138°C) and lactate esters such as ethyl lactate (151°C). Alkylene glycol monoalkyl ethers include ethylene glycol monomethyl ether (125°C), ethylene glycol monoethyl ether (135°C), propylene glycol monomethyl ether (121°C), propylene glycol monoethyl ether (133°C), and propylene glycol monopropyl ether (149.8°C). Examples of alkylene glycol monoalkyl ether acetates include ethylene glycol monomethyl ether acetate (145° C.) and propylene glycol monomethyl ether acetate (146° C.).

[0072] From the viewpoint of further improving the solubility of the compound [A], among these, the solvent [C] is preferably an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination thereof, more preferably a propylene glycol monoalkyl ether acetate, and even more preferably propylene glycol monomethyl ether acetate.

[0073] The lower limit of the content of the solvent [C] in the solvent in the protective film-forming composition is more preferably 10% by mass, even more preferably 30% by mass, particularly preferably 40% by mass, and even more particularly preferably 45% by mass. The upper limit of the content is more preferably 80% by mass, even more preferably 70% by mass, particularly preferably 60% by mass, and even more particularly preferably 55% by mass. By setting the content of the solvent [C] in the above range, the coatability can be further improved.

[0074] [[D] Other optional ingredients] The protective film-forming composition may contain, as components other than the compound [A], the solvent [B], and the solvent [C], for example, an acid generator, a polymer additive, a surfactant, a crosslinking agent, and the like.

[0075] The acid generator is a compound that generates an acid upon irradiation with radiation and / or heating. The protective film-forming composition may contain one or more types of acid generators.

[0076] Examples of the acid generator include onium salt compounds and N-sulfonyloxyimide compounds.

[0077] Examples of the polymer additive include (poly)oxyalkylene polymer compounds, fluorine-containing polymer compounds, and non-fluorine-containing polymer compounds.

[0078] Examples of the (poly)oxyalkylene polymer compound include polyoxyalkylenes such as (poly)oxyethylene (poly)oxypropylene adducts; (poly)oxyalkyl ethers such as diethylene glycol heptyl ether, polyoxyethylene oleyl ether, polyoxypropylene butyl ether, polyoxyethylene polyoxypropylene-2-ethylhexyl ether, and oxyethylene oxypropylene adducts to higher alcohols having 12 to 14 carbon atoms; (poly)oxyalkylene (alkyl)aryl ethers such as polyoxypropylene phenyl ether and polyoxyethylene nonyl phenyl ether; alkylene ethers to acetylene alcohols such as 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 2,5-dimethyl-3-hexyne-2,5-diol, and 3-methyl-1-butyne-3-ol; (poly)oxyalkylene fatty acid esters such as diethylene glycol oleate, diethylene glycol laurate, and ethylene glycol distearate; (poly)oxyalkylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate and polyoxyethylene sorbitan trioleate; (poly)oxyalkylene alkyl (aryl) ether sulfate salts such as polyoxypropylene methyl ether sodium sulfate and polyoxyethylene dodecylphenol ether sodium sulfate; (poly)oxyalkylene alkyl phosphates such as (poly)oxyethylene stearyl phosphate; and (poly)oxyalkylene alkyl amines such as polyoxyethylene laurylamine.

[0079] Examples of the fluorine-containing polymer compound include compounds containing a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a repeating unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups, propyleneoxy groups).

[0080] Examples of non-fluorinated polymer compounds include linear or branched alkyl (meth)acrylates such as lauryl (meth)acrylate, 2-ethylhexyl (meth)acrylate, n-butyl (meth)acrylate, t-butyl (meth)acrylate, isooctyl (meth)acrylate, isostearyl (meth)acrylate, and isononyl (meth)acrylate; alkoxyethyl (meth)acrylates such as methoxyethyl (meth)acrylate; alkylene glycol di(meth)acrylates such as ethylene glycol di(meth)acrylate and 1,3-butylene glycol di(meth)acrylate; hydroxyalkyl (meth)acrylates such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; dicyclopentenyloxyethyl (meth)acrylate; nonylphenoxypolyethylene glycol (-(CH2CHO) n -structure, n=1 to 17) and compounds containing one or more repeating units derived from a (meth)acrylate monomer such as (meth)acrylate.

[0081] Commercially available surfactants include, for example, "Newcol 2320", "Newcol 714-F", "Newcol 723", "Newcol 2307", and "Newcol 2303" (all manufactured by Nippon Nyukazai Co., Ltd.), "Paionin D-1107-S", "Paionin D-1007", "Paionin D-1106-DIR", "New Kalgen TG310", "New Kalgen TG310", "Paionin D-6105-W", "Paionin D-6112", "Paionin D-6512" (all manufactured by Takemoto Oil Co., Ltd.), "Surfynol 420", "Surfynol 440", "Surfynol 465", "Surfynol 2502" (all manufactured by Nippon Air Products Co., Ltd.), "Megafac F171", "Megafac F172", "Megafac F173", "Megafac F176", "Megafac F177", "Megafac F141", "Megafac F142", "Megafac F143", "Megafac F144", "Megafac F145", "Megafac F146", "Megafac F147", "Megafac F148", "Megafac F149", "Megafac F200", "Megafac F201", "Megafac F202", "Megafac F203", "Megafac F204", "Megafac F205", "Megafac F206", "Megafac F207", "Megafac F208", "Megafac F209", "Megafac F210", "Megafac F211", "Megafac F212", "Megafac F213", "Megafac F214", "Megafac F215", "Megafac F216", "Megafac F217", "Mega 144", "R30", "F437", "F475", "F479", "F482", "F562", "F563", "F780", "R-40", "DS-21", "RS-56", "RS-90", and "RS-72-K" (all manufactured by DIC Corporation), "Fluorad FC430" and "FC431" (all manufactured by Sumitomo 3M Limited), "Asahiguard AG710", "Surflon S-382", "SC-101", "SC-102", "SC-103", "SC-104", "SC-105", and "SC-106" (all manufactured by AGC Corporation), "FTX-218", and "NBX-15" (manufactured by Neos Corporation).

[0082] The crosslinking agent is a component that forms crosslinks between components such as the compound [A] by the action of heat or acid. Even if the compound [A] has an intermolecular bond-forming group, the protective film-forming composition can increase the hardness of the protective film by further containing a crosslinking agent. The crosslinking agent can be used alone or in combination of two or more.

[0083] Examples of the crosslinking agent include polyfunctional (meth)acrylate compounds such as trimethylolpropane tri(meth)acrylate and pentaerythritol tri(meth)acrylate; epoxy compounds such as novolac-type epoxy resins and bisphenol-type epoxy resins; hydroxymethyl-substituted phenol compounds such as 2-hydroxymethyl-4,6-dimethylphenol and 4,4'-(1-(4-(1-(4-hydroxy-3,5-bis(methoxymethyl)phenyl)-1-methylethyl)phenyl)ethylidene)bis(2,6-bis(methoxymethyl)phenol); alkoxyalkyl-group-containing phenol compounds such as methoxymethyl-group-containing phenol compounds and ethoxymethyl-group-containing phenol compounds; and compounds having an alkoxyalkylated amino group such as (poly)methylolated melamine and (poly)methylolated glycoluril.

[0084] When the protective film-forming composition contains other optional components, the lower limit of the content of the other optional components is preferably 0.1 parts by mass, more preferably 0.5 parts by mass, and even more preferably 1 part by mass, relative to 100 parts by mass of the compound [A]. The upper limit of the content is preferably 20 parts by mass, more preferably 10 parts by mass, and even more preferably 5 parts by mass.

[0085] [Method for preparing the composition for forming a protective film] The protective film-forming composition can be prepared by mixing [A] compound, [B] solvent, and, if necessary, [C] solvent, and [D] other optional components, etc. in a predetermined ratio, and preferably filtering the resulting mixture through a membrane filter or the like having a pore size of 0.1 μm or less.

[0086] <Protective film> The protective film of the present invention is formed from the protective film-forming composition. The protective film has excellent coatability.

[0087] <Method of forming protective film> The method for forming a protective film of the present invention includes the steps of: The method includes a step of directly or indirectly applying the composition for forming a protective film only to the peripheral edge of a substrate (hereinafter also referred to as a "coating step").

[0088] According to the method for forming a protective film, the composition for forming a protective film is used in the coating step, so that a protective film having excellent coatability can be formed.

[0089] The method for forming a protective film preferably further includes a step of heating the coating film formed in the coating step (hereinafter also referred to as a "heating step").

[0090] Each step will be described below.

[0091] [Coating process]

[0092] In this step, the composition for forming a protective film is directly or indirectly applied only to the peripheral portion of the substrate. The coating method can be performed by rotary coating. The substrate is rotated and the composition for forming a protective film is discharged onto the peripheral portion of the substrate to form a coating film, and the protective film is formed by the crosslinking reaction of the compound [A] contained in the coating film and the volatilization of the solvent.

[0093] [Heating process] In this step, the coating film formed in the coating step is heated, which promotes the formation of the protective film.

[0094] The coating film is usually heated in air, but may be heated in a nitrogen atmosphere. The lower limit of the heating temperature is preferably 150° C., more preferably 200° C. The upper limit of the heating temperature is preferably 600° C., more preferably 400° C. The lower limit of the heating time is preferably 15 seconds, more preferably 30 seconds. The upper limit of the heating time is preferably 1,200 seconds, more preferably 600 seconds.

[0095] The lower limit of the average thickness of the protective film formed is preferably 30 nm, more preferably 50 nm, and even more preferably 100 nm. The upper limit of the average thickness is preferably 3,000 nm, more preferably 2,000 nm, and even more preferably 500 nm. The average thickness of the protective film is a value obtained by discharging the protective film forming composition at the center of the substrate, forming a film of the protective film forming composition on the entire substrate by a rotary coating method, measuring the film thickness at any 9 positions at 5 cm intervals including the center of the substrate using a spectroscopic ellipsometer ("M2000D" manufactured by JAWOOLLAM), and calculating the average value of the film thicknesses.

[0096] <Method for manufacturing a patterned substrate> The method for producing the patterned substrate includes: A process of directly or indirectly applying the composition for forming a protective film only to the peripheral portion of a substrate (hereinafter also referred to as a "coating process"); A step of directly or indirectly forming a resist pattern on the substrate having the protective film formed by the coating step (hereinafter also referred to as a "resist pattern forming step"); The process includes a step of performing etching using the resist pattern as a mask (hereinafter, also referred to as an "etching step").

[0097] According to the method for producing a patterned substrate, the protective film having excellent coatability is formed in the coating step, so that a patterned substrate having a good pattern shape can be produced.

[0098] The method for producing the patterned substrate may, if necessary, further include a step of forming an organic underlayer film directly or indirectly on the substrate having the protective film formed by the coating step (hereinafter also referred to as an "organic underlayer film forming step") prior to the resist pattern forming step.

[0099] The method for producing the patterned substrate may further include, as necessary, a step of forming a silicon-containing film directly or indirectly on the substrate having the protective film formed by the coating step (hereinafter also referred to as a "silicon-containing film forming step") prior to the resist pattern forming step.

[0100] Each step will be described below.

[0101] [Coating process] In this step, the composition for forming a protective film is applied directly or indirectly only to the peripheral portion of the substrate. This step is the same as the application step in the above-mentioned method for forming a protective film.

[0102] [Organic lower layer film formation process] In this step, an organic underlayer film is formed directly or indirectly on the substrate having the protective film.

[0103] The organic underlayer film can be formed by coating the composition for forming an organic underlayer film. Examples of the method for forming the organic underlayer film by coating the composition for forming an organic underlayer film include a method in which the composition for forming an organic underlayer film is directly or indirectly coated on a substrate having a protective film, and the coated film is heated or exposed to light to cure the film. As the composition for forming an organic underlayer film, for example, "HM8006" manufactured by JSR Corporation can be used. The conditions for heating and exposure can be appropriately determined depending on the type of the composition for forming an organic underlayer film used.

[0104] [Silicon-containing film formation process] In this step, a silicon-containing film is formed directly or indirectly on the substrate having the protective film.

[0105] An example of a case where a silicon-containing film is indirectly formed on a substrate having a protective film is a case where a surface-modifying film of the protective film is formed on the protective film.

[0106] The silicon-containing film can be formed by coating the silicon-containing film-forming composition, chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. Examples of the method for forming the silicon-containing film by coating the silicon-containing film-forming composition include a method in which the composition for forming the silicon-containing film is directly or indirectly coated on the protective film, and the coating film is cured by exposure and / or heating. Examples of commercially available products of the silicon-containing film-forming composition include "NFC SOG01", "NFC SOG04", and "NFC SOG080" (all manufactured by JSR Corporation). A silicon oxide film, a silicon nitride film, a silicon oxynitride film, and an amorphous silicon film can be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0107] [Resist pattern formation process] In this step, a resist pattern is formed directly or indirectly on the protective film. For example, the method of performing this step can be a method using a resist composition, a method using a nanoimprint method, a method using a self-organizing composition, etc. For example, when the method of manufacturing the patterned substrate includes the silicon-containing film forming step, a resist pattern is formed on the silicon-containing film.

[0108] Specifically, the method of using the resist composition involves coating the resist composition so that the resist film to be formed has a predetermined thickness, and then pre-baking the coating to volatilize the solvent in the coating, thereby forming a resist film.

[0109] Examples of the resist composition include a positive or negative chemically amplified resist composition containing a radiation-sensitive acid generator, a positive resist composition containing an alkali-soluble resin and a quinone diazide-based photosensitizer, a negative resist composition containing an alkali-soluble resin and a crosslinking agent, etc. In this step, a commercially available resist composition can also be used as it is.

[0110] Next, the resist film formed above is exposed by selective radiation irradiation. The radiation used for exposure can be appropriately selected according to the type of radiation-sensitive acid generator used in the resist composition, and examples thereof include visible light, ultraviolet light, far ultraviolet light, electromagnetic waves such as X-rays and gamma rays, electron beams, molecular beams, particle beams such as ion beams, etc. Among these, far ultraviolet light is preferred, KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), F2 excimer laser light (wavelength 157 nm), Kr2 excimer laser light (wavelength 147 nm), ArKr excimer laser light (wavelength 134 nm) or extreme ultraviolet light (wavelength 13.5 nm, etc., hereinafter also referred to as "EUV") is more preferred, and KrF excimer laser light, ArF excimer laser light or EUV is even more preferred.

[0111] After the exposure, post-baking can be performed in order to improve resolution, pattern profile, developability, etc. The temperature and time of this post-baking can be appropriately determined depending on the type of resist composition used, etc.

[0112] Next, the exposed resist film is developed with a developer to form a resist pattern. This development may be alkaline development or organic solvent development. In the case of alkaline development, examples of the developer include aqueous basic solutions of ammonia, triethanolamine, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, etc. To these aqueous basic solutions, an appropriate amount of water-soluble organic solvents, such as alcohols such as methanol and ethanol, surfactants, etc. In the case of organic solvent development, examples of the developer include various organic solvents exemplified as the solvent [B] of the composition described above.

[0113] After development with the developer, the resist is washed and dried to form a desired resist pattern.

[0114] [Etching process] In this step, etching is performed using the resist pattern as a mask. The number of times of etching may be one or more times, that is, etching may be performed sequentially using the pattern obtained by etching as a mask, but from the viewpoint of obtaining a pattern with a better shape, multiple times is preferable. When performing multiple etchings, etching is performed sequentially in the order of the silicon-containing film, the protective film, and the substrate. Examples of the etching method include dry etching and wet etching. Among these, dry etching is preferable from the viewpoint of obtaining a better shape of the pattern of the substrate. For this dry etching, for example, gas plasma such as oxygen plasma is used. By the above etching, a patterned substrate having a predetermined pattern is obtained.

[0115] Dry etching can be performed, for example, using a known dry etching device. The etching gas used in dry etching can be appropriately selected depending on the mask pattern, the elemental composition of the film to be etched, etc., and examples thereof include fluorine-based gases such as CHF3, CF4, C2F6, C3F8, SF6, chlorine-based gases such as Cl2, BCl3, oxygen-based gases such as O2, O3, H2O, reducing gases such as H2, NH3, CO, CO2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3, BCl3, and inert gases such as He, N2, and Ar. These gases can also be used in combination. When etching a substrate using a pattern of a protective film as a mask, a fluorine-based gas is usually used. EXAMPLES

[0116] The following examples are provided to illustrate, but are not intended to limit the scope of the present invention.

[0117] [Weight average molecular weight (Mw)] The Mw of the polymer was measured by gel permeation chromatography (detector: differential refractometer) using GPC columns manufactured by Tosoh Corporation (two "G2000HXL", one "G3000HXL", and one "G4000HXL") under the analytical conditions of a flow rate of 1.0 mL / min, elution solvent: tetrahydrofuran, and column temperature: 40°C, with monodisperse polystyrene as the standard.

[0118] [Average thickness of protective film] The average thickness of the protective film was determined by ejecting the protective film forming composition onto the center of the substrate, forming a film from the protective film forming composition over the entire substrate by a rotary coating method, measuring the film thickness at any nine positions at 5 cm intervals, including the center of the substrate, using a spectroscopic ellipsometer (JAWOOLLAM's "M2000D"), and calculating the average of these film thicknesses.

[0119] <Preparation of protective film-forming composition> The compound [A], the solvent [B], the solvent [C], and the optional components [D] used in the preparation of the protective film-forming composition are shown below. In Table 1 below, "-" indicates that the corresponding solvent [B], the solvent [C], or the optional component [D] was not used.

[0120] [[A] compound] A-1: A resin having a structural unit represented by the following formula (A-1): A-2: A resin having a structural unit represented by the following formula (A-2): A-3: A resin having a structural unit represented by the following formula (A-3): A-4: A resin having a structural unit represented by the following formula (A-4):

[0121] [ka]

[0122] <Synthesis of compound [A]> As the compound [A], the polymers represented by the above formulas (A-1) to (A-4) (hereinafter also referred to as "polymers (A-1) to (A-4)") were synthesized by the following procedure.

[0123] The numbers attached to the structural units in the above formula (A-1) indicate the content (mol %) of the structural units. In the above formula (A-4), *R indicates the site of bonding to the oxygen atom.

[0124] [Synthesis Example 1-1] (Synthesis of Polymer (A-1)) In a reaction vessel, 70 g of m-cresol, 57.27 g of p-cresol, 95.52 g of 37% by mass aqueous formaldehyde solution, and 381.82 g of methyl isobutyl ketone were added and dissolved under a nitrogen atmosphere. The resulting solution was heated to 40°C, and then 2.03 g of p-toluenesulfonic acid was added and reacted at 85°C for 4 hours. The reaction solution was cooled to 30°C or lower, and the reaction solution was poured into a mixed solution of methanol / water (50 / 50 (mass ratio)) to cause reprecipitation. The precipitate was collected with filter paper and dried to obtain polymer (A-1). The Mw of polymer (A-1) was 50,000.

[0125] [Synthesis Example 1-2] (Synthesis of Polymer (A-2)) In a reaction vessel, 150 g of 2,7-dihydroxynaphthalene, 76.01 g of a 37% by mass aqueous formaldehyde solution, and 450 g of methyl isobutyl ketone were added and dissolved under a nitrogen atmosphere. The resulting solution was heated to 40°C, and then 1.61 g of p-toluenesulfonic acid was added and reacted at 80°C for 7 hours. The reaction solution was cooled to 30°C or lower, and the reaction solution was poured into a mixed solution of methanol / water (50 / 50 (mass ratio)) to cause reprecipitation. The precipitate was collected with filter paper and dried to obtain polymer (A-2). The Mw of polymer (A-2) was 3,000.

[0126] [Synthesis Example 1-3] (Synthesis of Polymer (A-3)) Polymer (A-3) was obtained in the same manner as in Synthesis Example 1-4, except that 15.12 g of 4,4'-(α-methylbenzylidene)bisphenol, 7.63 g of 1-hydroxypyrene, 12.6 g of 1-naphthol, and 4.52 g of paraformaldehyde in Synthesis Example 1-4 were replaced with 37.9 g of bisphenolfluorene and 2.86 g of paraformaldehyde. The Mw of the polymer (A-3) was 4,500.

[0127] [Synthesis Example 1-4] (Synthesis of Polymer (A-4)) In a reaction vessel, 20 g of the polymer (A-2) synthesized in Synthesis Example 1-2, 80 g of N,N-dimethylacetamide, and 22 g of potassium carbonate were charged under a nitrogen atmosphere. Then, the mixture was heated to 80°C, 19 g of propargyl bromide was added, and the mixture was stirred for 6 hours to carry out the reaction. After that, 40 g of methyl isobutyl ketone and 80 g of water were added to the reaction solution and a separation operation was performed, and the obtained organic phase was poured into a large amount of methanol, and the obtained precipitate was collected by filtration to obtain polymer (A-4). The Mw of polymer (A-4) was 3,200.

[0128] [[B] Solvent] B-1: 1,6-diacetoxyhexane (normal boiling point: 260°C) B-2: propylene Carbonate (normal boiling point: 242℃) B-3: Dipropylene glycol methyl ether acetate (normal boiling point: 213°C) B-4: Gamma-butyrolactone (normal boiling point: 204°C) B-5: Tripropylene glycol monomethyl ether (normal boiling point: 242°C) B-6: Ethyl 3-ethoxypropionate (normal boiling point: 170°C)

[0129] [[C] Solvent] C-1: Propylene glycol monomethyl ether acetate (normal boiling point: 146°C) C-2: Ethyl lactate (normal boiling point: 154°C) C-3: Methyl 3-methoxypropionate (normal boiling point: 142°C)

[0130] [[D] Other optional ingredients] D-1: Surfactant ("NBX-15" manufactured by Neos Co., Ltd.) D-2: Surfactant (DIC Corporation's "F563") D-3: Poly(2-ethylhexyl acrylate)

[0131] [Example 1] (Preparation of protective film-forming composition (J-1)) 10 parts by mass of (A-1) as the compound [A] was dissolved in 100 parts by mass of (B-1) as the solvent [B]. This solution was filtered through a polytetrafluoroethylene (PTFE) filter having a pore size of 0.2 μm to prepare a protective film-forming composition (J-1).

[0132] [Examples 2 to 23, Comparative Examples 1 to 4] (Preparation of protective film-forming compositions (J-2) to (J-23) and (CJ-1) to (CJ-4)) Each protective film-forming composition was prepared in the same manner as in Example 1, except that the types and amounts of each component shown in Table 1 below were used.

[0133] [Table 1]

[0134] <Evaluation> The protective film-forming compositions (J-1) to (J-23) and (CJ-1) to (CJ-4) obtained above were used to evaluate the coatability by the following method. The evaluation results are also shown in Table 2 below.

[0135] [Coatability] A silicon substrate was rotated at 1,500 rpm using a spin coater (Tokyo Electron Limited's "CLEAN TRACK ACT8"), and the protective film-forming compositions (J-1) to (J-23) and (CJ-1) to (CJ-4) prepared above were discharged at a discharge rate of 2 ml per second for 5 seconds from a position 1 cm long from the outer peripheral edge of the substrate to the center of the substrate. The substrate was then rotated at 1,500 rpm for 30 seconds, and heated at 250°C for 60 seconds in an air atmosphere, and then cooled at 23°C for 60 seconds to obtain a substrate with a protective film formed thereon. Regarding coatability, the formed protective film was observed with an optical microscope, and was evaluated as "A" (good) when no coating unevenness was observed, and as "B" (poor) when coating unevenness was observed.

[0136] [Table 2]

[0137] As is clear from the results in Table 2, the protective films formed from the protective film-forming compositions of the Examples obtained good results in all evaluation items of coatability. In contrast, the protective films formed from the protective film-forming compositions of the Comparative Examples were inferior in coatability. [Industrial Applicability]

[0138] According to the protective film forming composition of the present invention, a protective film having excellent coatability can be formed in the peripheral portion of the substrate. The protective film of the present invention has excellent coatability in the peripheral portion of the substrate. According to the method for forming a protective film of the present invention, a protective film having excellent coatability in the peripheral portion of the substrate can be obtained. According to the method for producing a patterned substrate of the present invention, a protective film having excellent coatability in the peripheral portion of the substrate can be obtained, so that a substrate having an excellent pattern shape can be obtained. Therefore, these can be suitably used in the production of semiconductor devices, which are expected to become even more miniaturized in the future.

Claims

1. A composition for forming a protective film for forming a protective film only on a peripheral portion of a substrate, A compound having an aromatic ring; Solvent and Contains The solvent includes a first solvent having a normal boiling point of 156° C. or more and less than 300° C. Composition for forming a protective film.

2. The composition for forming a protective film according to claim 1 , wherein the content of the first solvent in the solvent is 20% by mass or more and 100% by mass or less.

3. The composition for forming a protective film according to claim 1 or 2, wherein a content ratio of the first solvent in the solvent is 40% by mass or more and 60% by mass or less.

4. 4. The composition for forming a protective film according to claim 1, wherein the first solvent is an ester, an alcohol, an ether, a carbonate, or a combination thereof.

5. The composition for forming a protective film according to any one of claims 1 to 4, wherein the first solvent has a normal boiling point of 205°C or higher.

6. The composition for forming a protective film according to any one of claims 1 to 5, wherein the solvent includes at least one first solvent selected from the group consisting of ethers and carbonates.

7. The composition for forming a protective film according to claim 6 , wherein the ether is a dialkylene glycol monoalkyl ether acetate.

8. The composition for forming a protective film according to any one of claims 1 to 7, wherein the content of the solvent relative to all components contained in the composition for forming a protective film is 10 mass % or more and 90 mass % or less.

9. The composition for forming a protective film according to any one of claims 1 to 8, wherein the solvent further comprises a second solvent having a normal boiling point of less than 156°C.

10. The composition for forming a protective film according to claim 9 , wherein the second solvent is an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination thereof.

11. The composition for forming a protective film according to any one of claims 1 to 10, wherein the compound having an aromatic ring is a novolak resin, a styrene resin, an acenaphthylene resin, or a combination thereof.

12. The composition for forming a protective film according to any one of claims 1 to 11, wherein the value of the relative evaporation rate of the first solvent is 0.01 or more and 10 or less, when the value of butyl acetate is taken as 100.

13. A protective film formed from the composition for forming a protective film according to any one of claims 1 to 12.

14. A step of directly or indirectly applying the composition for forming a protective film according to any one of claims 1 to 12 only to the peripheral portion of a substrate; A method for forming a protective film comprising the steps of:

15. A step of directly or indirectly applying the composition for forming a protective film according to any one of claims 1 to 12 only to the peripheral portion of a substrate; forming a resist pattern directly or indirectly on the substrate having the protective film formed by the coating process; a step of performing etching using the resist pattern as a mask; A method for manufacturing a patterned substrate, comprising:

16. Prior to the resist pattern forming step, A step of directly or indirectly forming an organic underlayer film on the substrate having the protective film formed by the coating step. The method for producing a patterned substrate according to claim 15, further comprising:

17. A step of forming a silicon-containing film directly or indirectly on the substrate having the protective film formed by the coating step, prior to the resist pattern forming step. The method for producing a patterned substrate according to claim 15 or 16, further comprising:

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