Semiconductor element monitoring device and semiconductor element monitoring method

Abstract

A semiconductor device (100) monitoring device and a semiconductor device (100) monitoring device method, in which during operation of a semiconductor device (100), a leakage current flowing through a first electrode (102) and a second electrode (104) of the semiconductor device (100) is detected, the leakage current is compared with a first limit value of the leakage current, and an output is determined depending on a result of the comparison, and / or a point in time at which an extreme point, in particular a maximum value, of the leakage current occurs is determined, and an output is determined depending on said point in time, the output including a state of the semiconductor device (100), and the output is output.

Description

[Technical Field]

[0001] The present invention is based on a semiconductor device monitoring apparatus and a semiconductor device monitoring method. [Background technology]

[0002] In a semiconductor device that is configured with at least two electrodes and at least one intermediate dielectric layer and operates when a voltage is applied, dielectric breakdown occurs when: Usage life It is also an element that is always related to semiconductor devices. Usage life Other limiting factors include the generation of high leakage currents and degradation of the active region of the device, resulting in reduced performance. Summary of the Invention [Means for solving the problem]

[0003] The device and method according to the independent claims make it possible to monitor semiconductor components having a dielectric layer during operation and to detect defects therein, as well as to detect the remaining Usage life "Remaining Usage life In addition to the dynamics leading up to the breakdown, the degradation process following the breakdown can also be inferred. In this way, the leakage current level and / or the first breakdown, the "first peak", and / or the leakage current progression and performance progression based on the performance of the semiconductor device, here polarization, can be predicted. Usage life Monitoring is realized.

[0004] The semiconductor device monitoring method is intended to include the steps of: detecting a leakage current flowing through a first electrode and a second electrode of the semiconductor device during operation of the semiconductor device; comparing the leakage current with a first limit value of the leakage current; and determining an output according to the result of the comparison; and / or determining a point in time at which an extreme point, particularly a maximum value, of the leakage current occurs; determining an output according to the point in time, the output including the state of the semiconductor device, and outputting the output. This allows access to the internal state of the semiconductor device; Usage life This makes it possible to monitor the

[0005] A first limit value above or below which the leakage current is to be increased is determined from the plurality of limit values, and the semiconductor element is Usage life It may be contemplated that a residual value of is determined and the output comprises the residual value.

[0006] Semiconductor element Usage life It may be contemplated that the residual value of is determined according to the extreme point of the leakage current, in particular the time point at which the maximum value occurs, and the output includes the residual value. a leakage current is detected during operation of the semiconductor device in the first operating mode, and the leakage current exceeds a first limit; or Usage life If the residual value of is greater than the first threshold, it may be contemplated to continue operation of the semiconductor device in the first mode of operation.

[0007] A second limit value is determined from the plurality of limits, and if the leakage current exceeds the second limit value, operation of the semiconductor device in the second operating mode is continued or the operation is terminated; or Usage life If the residual value of is greater than the second threshold, operation of the semiconductor device in the second operating mode may be continued or the operation may be terminated.

[0008] It may be contemplated that a reference limit value and a reference temperature are set, a current temperature of the semiconductor element or the vicinity of the semiconductor element is determined, a coefficient is determined according to the current temperature and the reference temperature, the reference limit value is scaled by the coefficient, and the first limit value and / or the second limit value is determined according to the reference limit value scaled by the coefficient.

[0009] The state of the semiconductor device and the remaining Usage life It may be contemplated that a text containing an indication regarding the is determined, and that the text is sent in a message or output on a man-machine interface.

[0010] It may be contemplated that a control signal for setting an operation mode of a semiconductor device is determined, and the control signal is output to drive and control the semiconductor device or a device including the semiconductor device to operate in the operation mode.

[0011] The semiconductor device monitoring device includes a measuring device, a computing device, and an output device, wherein the measuring device is configured to detect a leakage current flowing through a first electrode and a second electrode of the semiconductor device during operation of the semiconductor device, the computing device is configured to compare the leakage current with a first limit value of the leakage current and determine an output depending on the result of the comparison, and / or the computing device is configured to determine an extreme point, in particular a time point at which a maximum value of the leakage current occurs and determine an output depending on the time point, the output including a state of the semiconductor device, and the output device is configured to output the output.

[0012] The present invention also relates to a microelectromechanical system (MEMS), memory, actuator, micromirror, printhead or speaker that includes a semiconductor device monitor and a semiconductor device.

[0013] Further advantageous embodiments emerge from the following description and drawings. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 is a schematic diagram of a semiconductor element. [Figure 2] This is the first condition for the defect distribution. [Figure 3] The second state for the first defect distribution. [Figure 4] This is the third state for the first defect distribution. [Figure 5] This is the fourth state for the first defect distribution. [Figure 6] This is the fifth state for the first defect distribution. [Figure 7] This is a first transition of the leakage current level according to the first distribution. [Figure 8] This is a second transition of the leakage current level according to the first distribution. [Figure 9] The first state for the second defect distribution. [Figure 10] A second state for a second defect distribution. [Figure 11] The third state for the second defect distribution. [Figure 12] This is the fourth state for the second defect distribution. [Figure 13] This is the fifth state for the second defect distribution. [Figure 14] This shows the transition of the leakage current level according to the second distribution. [Figure 15] This is a device for monitoring semiconductor devices. [Figure 16] A method for monitoring a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0015] In the following discussion, knowledge of the failure mechanisms of dielectric layers is utilized to identify residual dielectric strength from measurable changes during operation of a semiconductor device that includes one or more dielectric layers. Usage life This can be used to provide individualized, end-use-specific maintenance instructions and warnings in safety-related applications.

[0016] Conventional Usage life Indications, maintenance intervals and active monitoring of components are designed to prevent critical errors by early replacement or to indicate an error when it is already too late and the component has failed. The specified maintenance / replacement intervals are statistically calculated and often reflect very conservative limits for all components overall under an expected average load profile. Here, the load profile is crucial but can only be estimated.

[0017] However, the present invention has confirmed that such semiconductor devices exhibit a deterministic or predictable degradation process, in which a continuous failure or a stepwise behavior is observed. Knowing this behavior allows components to be monitored individually. At defined thresholds, a warning or a controlled replacement can be scheduled. This allows maintenance and replacement to be determined for each component, depending on the actual load profile. This benefits customers, who can then replace components when they are actually needed.

[0018] The gradual behavior could be, for example, a gradual increase in leakage current or a gradual decrease in power / performance. Leakage current can occur in semiconductor devices with a dielectric layer between two electrodes. The leakage current can change, for example, due to the accumulation of defects in the boundary layer between the dielectric of the dielectric layer and one of the electrodes. The defects accumulated in the boundary layer affect the barrier height. Knowing the initial barrier height and a parameter representing the space-charge-limited current component allows mapping of the leakage current over time. Furthermore, it is also possible to display the leakage current before and after the first breakdown. Furthermore, it is possible to display performance degradation based on the correlation between leakage current degradation and performance degradation.

[0019] In one aspect, leakage current is monitored. In one aspect, performance of a semiconductor device is monitored. The monitoring evaluates the leakage current level and generates an alarm; and Usage life It may be contemplated to define a first limit value at which the residual value still has a desired value.

[0020] During monitoring, the point in time when the first breakdown peak occurs is determined and the residual leakage current level or performance degradation occurs is monitored according to the defined product-specific limits. Usage life It may be contemplated to issue a warning including an estimate of

[0021] Because the load profile plays a major role even after the first limit is reached, multiple limits can be defined and active monitoring can continue. 1 is a schematic diagram of a semiconductor device 100. The semiconductor device 100 includes a first electrode 102, a second electrode 104, and a dielectric layer 106.

[0022] The dielectric layer 106 is disposed between the first electrode 102 and the second electrode 104. In this embodiment, the first electrode 102 and the second electrode 104 are disposed on opposite sides of the dielectric layer 106.

[0023] In this example, the dielectric layer 106 has a first defect type D1, a second defect type D2, and a third defect type D3. Alternatively, only the first defect type D1 may be present, or only two different defect types may be present. Alternatively, three or more defect types may be present. In this example, these defects are located at initial positions. The initial positions are defined during the manufacturing process of the dielectric layer. In this example, the defects are located at different distances from the first electrode 102 or the second electrode 104.

[0024] The defects are charged defects that move to the boundary layer between the dielectric layer 106 and either the first electrode 102 or the second electrode 104 depending on their charge when a potential is applied between them. Hereinafter, the boundary layer is referred to as the "interface." Here, the transport of the charged defects is determined by the nature of the defect and the "hopping mechanism."

[0025] The hopping mechanism in this context means that the displacement, i.e., hopping, of defects occurs in the dielectric layer 106 of thickness d in the electric field E exerted by the respective applied voltage U. A defect of a certain defect type i moves along the local defect state with an average effective distance

[0026]

number

[0027] This is the migration speed of the defect of defect type i.

[0028]

number

[0029] Speed

[0030]

number

[0031] is expressed by the well-known formula for variable range hopping.

[0032]

number

[0033] where:

[0034]

number

[0035] is the characteristic velocity of defect i in the dielectric layer 106

[0036]

number

[0037] represents a function that describes the influence of the local defect distribution on the dielectric layer 106. This defect distribution describes the properties of the dielectric layer 106 that together determine the behavior of defects of defect type i in the dielectric layer 106. The attenuation length α, the mean effective distance

[0038]

number

[0039] , activation energy

[0040]

number

[0041] , the charge of defect type i

[0042]

number

[0043] The parameters are physical properties.

[0044]

number

[0045] represents the Boltzmann constant. T represents the temperature around the observed defect, specifically the temperature of the dielectric layer 106. Leakage current density until dielectric failure

[0046]

number

[0047] The time course of the electron emission is determined by the Crowell and Sze theory of diffusion.

[0048]

number

[0049] where q is the unit charge,

[0050]

number

[0051] is the effective density of states in the conduction band,

[0052]

number

[0053] is the effective recombination rate,

[0054]

number

[0055] is the effective diffusion rate,

[0056]

number

[0057] is the effective Schottky barrier,

[0058]

number

[0059] represents the Boltzmann constant, T represents the ambient temperature, and U represents the voltage applied to the dielectric layer 106 . Positively charged defects i move to the electrode with negative potential and accumulate at the interface. Negatively charged defects i move to the electrode with positive potential and accumulate at the interface. This creates an effective Schottky barrier.

[0060]

number

[0061] changes. Barrier height change caused by defect i

[0062]

number

[0063] is its maximum height

[0064]

number

[0065] and the characteristic time constant

[0066]

number

[0067] It is characterized by the characteristic time constant

[0068]

number

[0069] is the change in barrier height

[0070]

number

[0071] defines the period during which t varies most over time t.

[0072]

number

[0073] Maximum height

[0074]

number

[0075] is the number of defects i

[0076]

number

[0077] is a function of and depends on the type of interface.

[0078]

number

[0079] is a term that represents the accumulation over time of the statistical distribution of defects i in the material, in particular the accumulation time of each initial position. In this example, the initial position represents the centroid of the distribution. If there are multiple accumulations for defects of defect type i, one of the accumulations may be selected to define the initial position instead of the centroid. Preferably, Usage life The accumulation that has the greatest effect on the increase in

[0080] Various defect types can exist in the dielectric layer 106. The effective Schottky barrier is

[0081]

number

[0082] Increasing the barrier height change

[0083]

number

[0084] This reduces the leakage current level. Here, these are exemplarily referred to as "healable" defects.

[0085]

number

[0086] Decreasing the barrier height change

[0087]

number

[0088] There may be defects that cause leakage current levels to increase. These are referred to herein as "degrading" defects, for illustrative purposes. When a voltage is applied, the defects move, with certain defects moving faster depending on the activation energy and charge.

[0089] The initial location of defect i is, in this example, the distance of the center of gravity of its distribution to the interface where defect i will travel in the intended operation of semiconductor device 100.

[0090]

number

[0091] is defined by time constant

[0092]

number

[0093] may be different for the movement under the influence of the first voltage U1 and the movement under the influence of the second voltage U2.

[0094]

number

[0095] can be defined by the mobility of defect i under the influence of the electric field E in the dielectric layer 106 and the distance it must travel in the dielectric layer 106 before reaching the respective interface. When displacing within the dielectric layer 106, defect type i moves to the center of gravity of its distribution at a distance

[0096]

number

[0097] It is necessary to advance to the interface.

[0098]

number

[0099] In combination with this, the characteristic time constant of the accumulation process of defect i is

[0100]

number

[0101] becomes:

[0102]

number

[0103] The leakage current was measured over time, and the time course was evaluated using the Crowell and Sze theory of thermal electron emission diffusion and the time course of the barrier height change. The time constant

[0104]

number

[0105] can be determined at different temperatures T and voltages U.

[0106]

number

[0107] By measuring multiple times, the activation energy of the defect of defect type i

[0108]

number

[0109] and charge

[0110]

number

[0111] can be determined. When a first voltage U1 of a first polarity is applied, the charged defects move in a first direction toward the first electrode 102. When a second voltage U2 of opposite polarity to the first voltage U1 is applied, the charged defects move in a second direction toward the second electrode 102.

[0112] Charged defects that reach the interface at the first electrode 102 or the second electrode 104 are accumulated at the interface. The semiconductor device 100 may have two or more electrodes, and may have one or more dielectric layers located between each of the two electrodes.

[0113] Such a semiconductor element may undergo dielectric breakdown when operated by applying a voltage. When dielectric breakdown occurs, a part or all of the interface is destroyed. When dielectric breakdown occurs, the semiconductor element 100 Usage life Dielectric breakdown occurs, for example, when the number of charged defects accumulated at the interface exceeds a voltage-dependent threshold.

[0114] By optimizing the process conditions and / or process controls during the fabrication of the dielectric layer 106, the physical properties and the manufacturing-specific effects on these physical properties can be influenced. Usage life can be extended.

[0115] The process conditions and / or process controls affect, for example, the growth, growth conditions, material composition, etc. The process conditions and / or process controls may, for example, introduce intentional or unintentional doping and / or impurities into the growth process or subsequent processes.

[0116] FIG. 2 illustrates a first state for a first distribution ρ of defects over a distance x from the second electrode 104. In this example, the first state is the initial state. In FIG. 2 and subsequent figures, the distribution of a first defect type, D1, is indicated by triangle symbols. In FIG. 2 and subsequent figures, the distribution of a second defect type, D2, is indicated by star symbols. In FIG. 2 and subsequent figures, the distribution of a third defect type, D3, is indicated by diamond symbols.

[0117] 3 illustrates a second state for the first distribution of defects ρ over a distance x from the second electrode 104. In this example, the second state is a first pre-breakdown operating state following the initial state when the semiconductor device 100 is operated at the first voltage U1, in which defects of a second defect type D2 have already accumulated at the interface of the first electrode 102.

[0118] 4 illustrates a third state for the first distribution of defects ρ over a distance x from the second electrode 104. In this example, the third state is a first pre-breakdown operating state following the second state when the semiconductor device 100 is operated at the first voltage U1, where defects of the second defect type D2 and defects of the third defect type D3 have already accumulated at the interface of the first electrode 102. Even in this situation, the semiconductor device can be rebuilt by taking measures to move the defects away from the interface. Usage life It is possible to extend the period.

[0119] 5 illustrates a fourth state for the first distribution of defects ρ over a distance x from the second electrode 104. In this example, the fourth state is a first pre-breakdown operating state following the third state when the semiconductor device 100 is operated at the first voltage U1, in which defects D2 of the second defect type and defects D3 of the third defect type have already accumulated at the interface of the first electrode 102, and defects D1 of the first defect type have reached the interface. It is possible to issue a warning before performance degradation occurs.

[0120] 6 illustrates a fifth state for the first distribution of defects ρ over a distance x from the second electrode 104. In this example, the fifth state is an operating state subsequent to the fourth state when the semiconductor device 100 is operated at a first voltage U1, in which defects of a first defect type D1, a second defect type D2, and a third defect type D3 have accumulated at the interface of the first electrode 102, causing performance degradation.

[0121] Figure 7 shows the remaining Usage life 7 shows the leakage current level I over time t for early detection of the leakage current level I. In the example shown in FIG. 7, the degradation in performance from the initial state is approximately 10 s at the first voltage U1. 6 This occurs after running for seconds.

[0122] 7 exemplarily shows the leakage current level I of the states explained in FIGS. 2 to 6. The first state is shown as 0, the second state as 1, the third state as 2, the fourth state as 3, and the fifth state as 4.

[0123] Remaining Usage life For early detection, an exemplary leakage current level 700 is provided, which, when reached, will trigger, for example, a warning. Figure 8 shows the progression of the leakage current level I for reversing the defect accumulation over the time t of the start of electrical loading with the second voltage U2. In the example shown in Figure 8, the performance degradation from the initial state is approximately 10 6 This occurs after running for seconds.

[0124] 8 exemplarily shows the leakage current level I of the states explained in Fig. 2 to Fig. 6. The first state is shown as 0, the second state as 1, the third state as 2, the fourth state as 3, and the fifth state as 4.

[0125] An exemplary leakage current level 800 for reversing defect accumulation is provided for the electrical load by the second voltage U2, which, when reached, initiates reversal of defect accumulation.

[0126] 9 illustrates a first state for a second distribution ρ of defects over a distance x from the second electrode 104. In this example, the first state is the initial state. In FIG. 9 and subsequent figures, the distribution of a first defect type, defects D1, is indicated by triangle symbols. In FIG. 9 and subsequent figures, the distribution of a second defect type, defects D2, is indicated by star symbols. In FIG. 9 and subsequent figures, the distribution of a third defect type, defects D3, is indicated by diamond symbols.

[0127] 10 illustrates a second state for the second distribution of defects ρ over a distance x from the second electrode 104. In this example, the second state is a first pre-breakdown operating state following the initial state when the semiconductor device 100 is operated at the first voltage U1, in which defects of the second defect type D2 have already accumulated at the interface of the first electrode 102.

[0128] 11 illustrates a third state for the second distribution of defects ρ over a distance x from the second electrode 104. In this example, the third state is an operating state subsequent to the second state when the semiconductor device 100 is operated at the first voltage U1 at an early point in performance degradation, where defects of the second defect type D2 and defects of the third defect type D3 have already accumulated at the interface of the first electrode 102. In this situation, this example can provide an early warning and allow maintenance of the semiconductor device 100 based on that warning. For example, starting from an initial state, Usage life The early warning threshold is selected so that a warning is issued when approximately 10% of the time has elapsed. In this example, individual breakdowns typically only damage a very small area, so that at this point the degradation in performance is not yet noticeable. This is detectable in terms of current, but is not noticeable with respect to the function of the product containing the semiconductor device 100, such as an actuator product.

[0129] 12 illustrates a fourth state for the second distribution of defects ρ over a distance x from the second electrode 104. In this example, the fourth state is a first pre-breakdown operating state following the third state when the semiconductor device 100 is operated at the first voltage U1, where defects D2 of the second defect type and defects D3 of the third defect type have already accumulated at the interface of the first electrode 102, and defects D1 of the first defect type have reached the interface. In this situation, this example can issue a critical warning and perform maintenance on the semiconductor device 100 based on that warning. For example, starting from an initial state, the semiconductor device 100 Usage life The early warning threshold is selected so that a warning is issued when approximately 50% of the failure time has elapsed. In this example, multiple localized breakdowns have already occurred at this state. This results in a significantly higher leakage current level, making detection possible. The total area destroyed by the multiple localized breakdowns is now significant in percent of the product's functionality. Thus, for example, a warning is issued. The semiconductor device 100 or product is still clearly in this state in this example before failure.

[0130] 13 illustrates a fifth state for the second distribution of defects ρ over a distance x from the second electrode 104. In this example, the fifth state is an operating state following the fourth state when the semiconductor device 100 is operated at the first voltage U1, where defects of a first defect type D1, a second defect type D2, and a third defect type D3 have accumulated at the interface of the first electrode 102, resulting in a significant degradation of performance. Usage life This is the point at which the process ends.

[0131] where: Usage life This is the time when semiconductor device 100 can no longer be used as intended. This limit may vary for different applications. 14 shows the progress of the leakage current level I over time t. In the example of FIG. 14, the performance degradation starts from the initial state and progresses to about 9*10 at the first voltage U1. 4 After running for seconds Usage life Reach the end of. Usage life The end of depends on the material and conditions. Usage life Although the end of is after the fourth state, there is still a slight performance degradation even after reaching the fifth state.

[0132] 14 exemplarily shows the leakage current levels I of the states described in FIGS. 9 to 13. The first state is represented as 0, the second state as 1, the third state as 2, the fourth state as 3, and the fifth state as 4.

[0133] For a critical warning, an exemplary leakage current level 1400 is provided that, when reached, will trigger, for example, a critical warning. FIG. 15 schematically shows an apparatus 200 for manufacturing the semiconductor device 100 according to the first embodiment.

[0134] The apparatus 200 includes an adjustment and / or control device 202 configured to perform steps in the below-described methods for monitoring the semiconductor device 100. The apparatus 200 is at least temporarily connectable to a first electrode 102 of the semiconductor device 100 via a first electrical conductor 204. The apparatus 200 is at least temporarily connectable to a second electrode 104 of the semiconductor device 100 via a second electrical conductor 206.

[0135] The adjusting and / or controlling device 202 is configured to output a first voltage U1 having a first polarity in this example, such that when the first electrode 102 and the second electrode 104 are connected to the device 200 by their respective conductors, the first voltage U1 is applied between the first electrode 102 and the second electrode 104, and the adjusting and / or controlling device 202 outputs the first voltage U1.

[0136] The regulator and / or controller 202 is optionally configured to output a second voltage U2 having a polarity opposite to the first polarity. In this example, when the first electrode 102 and the second electrode 104 are connected to the device 200 by their respective conductors, the second voltage U2 is applied between the first electrode 102 and the second electrode 104, and the regulator and / or controller 202 outputs the second voltage U2.

[0137] The control device may be configured to output an alternating voltage or a substantially constant value for the first voltage U1 and / or the second voltage U2, for example in the range of 1 to 80 volts, preferably 1 volt, 2 volts, 5 volts, 10 volts, 20 volts, 40 volts or 80 volts.

[0138] Preferably, the dielectric layer 106 is constructed as a polycrystalline oxide high-k dielectric. In particular, the dielectric layer 106 is configured as a PZT layer. PZT is herein defined as Pb(Zr x Ti 1-x )O3.

[0139] The dielectric layer 106 is particularly configured as a KNN layer. KNN is defined here as (K x Na 1-x )NbO3. The dielectric layer 106 may be, in particular, HfO2, HfZrO2, ZrO2, BaTiO3, SrTiO3 or (Ba x Sr 1-x ) TiO3 layer.

[0140] Preferably, the dielectric layer 106 is doped. For example, the dielectric layer 106 is a nickel-doped PZT layer.

[0141]

number

[0142] Both the PZT layer and the KNN layer may have dopants other than nickel, such as Nb, La, Mn, and Mg. Preferably, the dielectric layer is configured as a sputtered PZT layer, where a so-called target material is deposited on the substrate by plasma. For example, PZT is used as the target material. Preferably, the sputtered PZT layer in this context has a deposition temperature below 500°C.

[0143] Preferably, the thickness of the dielectric layer is in the range of 500 nm to 4 μm. This is a useful range for actuators. Preferably, the layer thickness is 1 μm or 4 μm. Larger layer thicknesses are also possible. The procedure described can be carried out for all layer thicknesses.

[0144] Smaller layer thicknesses are also possible. Preferably, the thickness of the dielectric layer is in the range of less than 500 nm, for example, for applications other than actuators. Examples include applications of high-k dielectrics, such as memory. The memory may be a resistive random access memory (ReRAM) or a ferroelectric memory (FeRAM). For these other applications, a thickness of 15 nm to 200 nm is beneficial, depending on the application.

[0145] Furthermore, very thin high-k dielectrics, such as gate oxide layers, can be used in numerous applications. Dielectric layer 106 may be, for example, HfO2 or SiO2, with a thickness of 50 nm or less.

[0146] The adjusting device can be configured to adjust the threshold value of the first voltage U1, which may be, for example, in the range of 1 to 80 volts, preferably 1 volt, 2 volts, 5 volts, 10 volts, 20 volts, 40 volts or 80 volts.

[0147] The adjusting device can be configured to adjust the threshold value of the second voltage U2, which may be, for example, in the range of 1 to 80 volts, preferably 1 volt, 2 volts, 5 volts, 10 volts, 20 volts, 40 volts or 80 volts.

[0148] In this case, a voltage measuring device may be provided that is configured to detect a voltage between the first electrode 102 and the second electrode 104. In this case, the adjusting device is configured to reduce an adjustment deviation that is determined depending on the difference between the detected voltage and a threshold value.

[0149] In this example, the device 200 optionally includes a measurement device 208. In this example, the measurement device 208 is configured to measure the current flowing through the first electrode 102 and the second electrode 104.

[0150] In this embodiment, the measuring device 208 is located within the first conductor 204. Alternatively, a corresponding location may be provided elsewhere. In this embodiment, the measuring device 208 is connected to the adjusting and / or controlling device 202 via a signal line 210 for transmitting the measured current.

[0151] The leakage current is strongly dependent on temperature. It may be contemplated that the measurement device 208 includes a device for determining the current temperature T. A temperature measurement is performed on the semiconductor device 100 or its immediate surroundings. In this embodiment, the limit value G at the temperature T is determined according to the following exponential relationship as a function of the reference limit value G0 at the reference temperature T0:

[0152]

number

[0153] Here, k is a constant that represents the effective barrier height at that point. In this embodiment, the device 200 includes a voltage and / or current source 212 for outputting a voltage. In this embodiment, the device 200 includes a computing device 214, in particular a microprocessor, configured to perform the methods described below. In this embodiment, the device 200 includes a memory 216 configured to store limit values ​​and characteristic curves that can be determined from the limit values. In this embodiment, the device 200 includes an output device 218 configured to provide an output 220.

[0154] The semiconductor device 100 may include a memory, an actuator, a MEMS, a micromirror, a print head, or a speaker. The semiconductor device 100 may include a monitoring device and the semiconductor device 100. The semiconductor device 100 may include a memory, an actuator, a MEMS, a micromirror, a print head, or a speaker. Usage life It may be contemplated to carry out monitoring of the

[0155] A method for monitoring the semiconductor device 100 will be described below with reference to FIG. In step 1600, the semiconductor device 100 operates in a first operating mode in which a first voltage U1 is applied.

[0156] In step 1602, leakage current I flowing through the first electrode 102 and the second electrode 104 of the semiconductor device 100 is detected during operation of the semiconductor device 100. In one aspect, in step 1604, the leakage current I is compared to a first limit value for the leakage current I, for example, one of leakage current levels 700, 800, 1400. In step 1604, the output 220 is determined depending on the result of the comparison. It may be contemplated that the first limit value is determined from multiple limit values ​​that the leakage current I is above or below.

[0157] It may be attempted to take into account the voltage dependence and / or temperature dependence of the leakage current I. For example, the limit value is determined depending on the reference limit value G0 and the reference temperature T0, in particular in the exponential relationship mentioned above.

[0158] In step 1604, in one embodiment, the time at which an extreme point, particularly a maximum value, of the leakage current I occurs may be determined. In this embodiment, the output 220 may be determined according to the time point. The output 220 includes the state of the semiconductor device 100 .

[0159] The semiconductor element 100 is Usage life It may be contemplated that a residual value of is determined. In this case, the output 220 may include this residual value. Depending on the peak of the leakage current I, particularly the maximum value, the semiconductor element 100 Usage life It may be contemplated that a residual value of is determined. In this case, the output 220 may include this residual value.

[0160] For example, the state of the semiconductor device 100 and the remaining Usage life , for example, a text including an indication regarding the remaining value. In this embodiment, the remaining value is determined as the remaining value of the semiconductor device 100 from the time when the leakage current I is detected. Usage life The period is a period during which the semiconductor device 100 can still be operated at the first voltage U1 until the time when the time when the leakage current I associated with the movement of defects under the influence of the first voltage U1 described above occurs. The period may be determined based on a useful time for each application, for example, from the time when the leakage current I associated with the movement of defects under the influence of the first voltage U1 described above is detected. Usage life Calculated until the end of

[0161] In one aspect, a control signal that sets an operational mode of the semiconductor device 100 is determined. In step 1606, output 220 is output. For example, it may be sent as a message or output to a human-machine interface.

[0162] For example, a control signal is output to drive and control the semiconductor device 100 or a device including the semiconductor device 100 to operate in the operation mode. Subsequently, step 1600 is executed in an operating mode specifically set for that purpose. It may be contemplated to terminate the method for any of the reasons explained below.

[0163] If a leakage current I is detected during operation of the semiconductor device 100 in a first operating mode, and in step 1602, the leakage current I exceeds a first limit value; or Usage life It may be contemplated that if the residual value of is greater than the first threshold, operation of the semiconductor device 100 continues in the first operating mode.

[0164] In this case, a second limit value may then be determined from the plurality of limit values, and if the leakage current I exceeds the second limit value, operation of the semiconductor device 100 may be continued in the second operating mode or may be terminated. In this manner, various responses may be taken as the leakage current level increases.

[0165] Alternatively, it may be contemplated that operation of semiconductor device 100 may continue in the second operating mode or may be terminated. Usage life If the residual value of is less than the second threshold, operation may continue in the second operating mode. Usage life If the residual value of is greater than a second threshold, operation may be terminated. As the residual value decreases, various responses can be taken.

Claims

1. A method for monitoring a semiconductor device (100), comprising the steps of: detecting (1602) a leakage current (I) flowing through a first electrode (102) and a second electrode (104) arranged on opposite sides of a dielectric layer (106) of the semiconductor device (100) during operation of the semiconductor device (100); comparing the leakage current (I) with a first limit value (700, 800, 1400) of the leakage current (I); determining (1604) an output (220) depending on a result of the comparison; the output including a state of the semiconductor device (100), and outputting (1606) the output (220). A remaining value of the service life of the semiconductor device (100) is determined (1604) in response to the first limit value (700, 800, 1400), and the output (220) includes the remaining value. method.

2. 2. The method of claim 1, further comprising determining a text including an indication regarding the state of the semiconductor component (100) and the remaining value, the text being transmitted in a message or outputted at a man-machine interface (1606).

3. 3. The method of claim 1 or 2, further comprising determining (1604) a control signal for setting an operation mode of the semiconductor device (100), and outputting (1606) the control signal to drive and control the semiconductor device (100) to operate in the operation mode.

4. A semiconductor device (100) monitoring device (200), comprising: a measuring device (208), a computing device (214), and an output device (218), wherein the measuring device (208) is configured to detect a leakage current (I) flowing through a first electrode (102) and a second electrode (104) arranged on opposite sides of a dielectric layer (106) of the semiconductor device (100) during operation of the semiconductor device (100); the computing device (214) is configured to compare the leakage current (I) with a first limit value (700, 800, 1400) of the leakage current (I) and determine an output (220) according to a result of the comparison, the output including a state of the semiconductor device (100); and the output device (218) is configured to output the output (220). A remaining value of the service life of the semiconductor device (100) is determined (1604) in response to the first limit value (700, 800, 1400), and the output (220) includes the remaining value. Device.

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