Semiconductor Device

Abstract

To provide a semiconductor device which can improve a heat dissipation property when be screwed to a heat dissipation device.SOLUTION: A semiconductor device includes a power semiconductor element, and a mold resin for sealing the power semiconductor element. The mold resin has such a rectangular shape as to be composed of a first side and a second side extending in a first direction, and a third side and a fourth side extending in a second direction perpendicular to the first direction, in plan view. A length of the first side is longer than a length of the third side. In the mold resin, a first screw hole and a second screw hole penetrating through the mold resin in a third direction perpendicular to the first direction and the second direction are formed. A first virtual straight line passing through the center in the second direction of the first screw hole, and the center in the second direction of the second screw hole extends in the first direction, and is on a side closer to the second side than the center of the mold resin in the second direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] For example, Japanese Patent Laid-Open Publication No. 2018-107364 (Patent Document 1) describes a semiconductor device. The semiconductor device described in Patent Document 1 includes an IGBT (Insulated Gate Bipolar Transistor), a freewheel diode, and a sealing body.

[0003] The IGBT and the free hole diode are sealed with a sealing body. In a plan view, the sealing body has a rectangular shape configured with a first side and a second side extending along a first direction and a third side and a fourth side extending along a second direction perpendicular to the first direction. A first screw hole and a second screw hole are formed in the sealing body. A virtual line (first virtual line) passing through the center of the first screw hole in the second direction and the center of the second screw hole in the second direction is along the first direction and passes through the center of the sealing body in the second direction. The semiconductor device described in Patent Document 1 is attached to a heat dissipation device by passing a screw through the first screw hole and the second screw hole and screwing the screw into the heat dissipation device.

[0004] The IGBT is disposed in the vicinity of the first imaginary line in a plan view, while the free hole diode is located farther from the first imaginary line toward the second side than the IGBT in a plan view. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2018-107364 A Summary of the Invention [Problem to be solved by the invention]

[0006] The IGBT and the freewheel diode are sometimes integrated into one chip. That is, a reverse conducting IGBT (RC-IGBT) is sometimes used instead of the IGBT and the freewheel diode. In this case, in the semiconductor device described in Patent Document 1, a virtual line (second virtual line) that passes through the center of the reverse conducting IGBT in the second direction and runs along the first direction may deviate from the first virtual line, and heat dissipation may be insufficient when the semiconductor device is screwed to a heat dissipation device.

[0007] The present disclosure has been made in consideration of the problems of the conventional techniques as described above. More specifically, the present disclosure provides a semiconductor device capable of improving heat dissipation when screwed to a heat dissipation device. [Means for solving the problem]

[0008] The semiconductor device of the present disclosure includes a power semiconductor element and a molded resin that seals the power semiconductor element. In a plan view, the molded resin has a rectangular shape that is configured with a first side and a second side extending along a first direction and a third side and a fourth side extending along a second direction perpendicular to the first direction. The length of the first side is greater than the length of the third side. The molded resin is formed with a first screw hole and a second screw hole that penetrate the molded resin along a third direction perpendicular to the first direction and the second direction. A first imaginary line that passes through the center of the first screw hole in the second direction and the center of the second screw hole in the second direction extends along the first direction and is located closer to the second side than the center of the molded resin in the second direction. The distance between the second imaginary line that passes through the center of the power semiconductor element in the second direction and extends along the first direction and the first imaginary line is 2 mm or less. Effect of the Invention

[0009] According to the semiconductor device of the present disclosure, it is possible to improve heat dissipation properties when the semiconductor device is screwed to a heat dissipation device. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic configuration diagram of a semiconductor device 100. FIG. [Diagram 2] FIG. 1 is a plan view of a semiconductor device 100. [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] 1 is a cross-sectional view of a semiconductor device 200. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Embodiment 1 A semiconductor device according to the first embodiment will be described below. The semiconductor device according to the first embodiment is designated as a semiconductor device 100.

[0012] (Configuration of semiconductor device 100) The configuration of the semiconductor device 100 will be described below.

[0013] 1 is a schematic configuration diagram of a semiconductor device 100. As shown in FIG 1, the semiconductor device 100 includes an inverter circuit 10, a control element 20, a control element 30, and a plurality of bootstrap diodes 40.

[0014] The inverter circuit 10 is, for example, a three-phase inverter circuit. The inverter circuit 10 has a plurality of reverse conducting IGBTs 11. In the example shown in FIG. 1, the number of reverse conducting IGBTs 11 is six. The reverse conducting IGBT 11 has an IGBT 12 and a freewheel diode 13. The IGBT 12 and the freewheel diode 13 are monolithically formed on one semiconductor substrate. The freewheel diode 13 is connected to the IGBT 12 so as to be reverse biased.

[0015] The inverter circuit 10 has an inverter power supply terminal 10a, output terminals 10b, 10c, and 10d, and output terminals 10e, 10f, and 10g. The six reverse conducting IGBTs 11 included in the inverter circuit 10 are referred to as reverse conducting IGBTs 11a, 11b, 11c, 11d, 11e, and 11f. The collector electrodes of the reverse conducting IGBTs 11a, 11b, and 11c are connected to the inverter power supply terminal 10a.

[0016] The emitter electrode of the reverse conducting IGBT 11a and the collector electrode of the reverse conducting IGBT 11d are connected to the output terminal 10b. The emitter electrode of the reverse conducting IGBT 11b and the collector electrode of the reverse conducting IGBT 11e are connected to the output terminal 10c. The emitter electrode of the reverse conducting IGBT 11c and the collector electrode of the reverse conducting IGBT 11f are connected to the output terminal 10d.

[0017] The emitter electrode of the reverse conducting IGBT 11d, the emitter electrode of the reverse conducting IGBT 11e, and the emitter electrode of the reverse conducting IGBT 11f are connected to the output terminal 10e, the output terminal 10f, and the output terminal 10g, respectively. Note that the output terminals 10b and 10e are, for example, U-phase output terminals, the output terminals 10c and 10f are, for example, V-phase output terminals, and the output terminals 10d and 10g are, for example, W-phase output terminals.

[0018] The gate electrodes of reverse conducting IGBT 11a, 11b, and 11c are connected to a control element 20. The gate electrodes of reverse conducting IGBT 11d, 11e, and 11f are connected to a control element 30. From another perspective, the control element 20 is a high-voltage side control circuit, and the control element 30 is a low-voltage side control circuit.

[0019] The control element 20 has a control power supply terminal 20a, and drive power supply terminals 20b, 20c, and 20d. A control power supply voltage for the control element 20 is supplied from the control power supply terminal 20a. A drive power supply voltage for the control element 20 is supplied from the drive power supply terminal 20b, 20c, and 20d. The drive power supply terminals 20b, 20c, and 20d are for the U phase, V phase, and W phase, respectively. Note that other terminals of the control element 20 and the terminals of the control element 30 are not shown in the figure.

[0020] The control element 20 has a level shift circuit and a gate drive circuit, and outputs gate drive signals to the reverse conducting IGBT 11a, the reverse conducting IGBT 11b, and the reverse conducting IGBT 11c based on inputs from each terminal. The control element 30 has a level shift circuit and a gate drive circuit, and outputs gate drive signals to the reverse conducting IGBT 11d, the reverse conducting IGBT 11e, and the reverse conducting IGBT 11f based on inputs from each terminal.

[0021] In the example shown in Fig. 1, the number of bootstrap diodes 40 is three. These three bootstrap diodes 40 are referred to as a bootstrap diode 40a, a bootstrap diode 40b, and a bootstrap diode 40c. The bootstrap diode 40a is connected between the control power supply terminal 20a and the drive power supply terminal 20b. The bootstrap diode 40b is connected between the control power supply terminal 20a and the drive power supply terminal 20c. The bootstrap diode 40c is connected between the control power supply terminal 20a and the drive power supply terminal 20d.

[0022] Fig. 2 is a plan view of the semiconductor device 100. In Fig. 2, the molded resin 50 is indicated by a dotted line. In Fig. 2, the heat sink 70 is indicated by a dashed line. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2. As shown in Figs. 2 and 3, the semiconductor device 100 has the molded resin 50, a lead frame 60, the heat sink 70, and an insulating sheet 80.

[0023] The molded resin 50 encapsulates the multiple reverse conducting IGBTs 11, the control elements 20 and 30, the multiple bootstrap diodes 40, the lead frame 60, the heat sink 70, and the insulating sheet 80. The molded resin 50 is made of a resin material. The molded resin 50 is preferably made of a curing and shrinking resin material. The curing and shrinking resin material is a resin material that shrinks as it hardens. A specific example of the curing and shrinking resin material is epoxy resin.

[0024] In a plan view, the mold resin 50 has a rectangular shape including a first side 50a and a second side 50b extending along a first direction DR1 and a third side 50c and a fourth side 50d extending along a second direction DR2. The second direction DR2 is a direction perpendicular to the first direction DR1. The length of the first side 50a and the length of the second side 50b are greater than the length of the third side 50c and greater than the length of the fourth side 50d.

[0025] The molded resin 50 has a first screw hole 51 and a second screw hole 52 formed therein. The first screw hole 51 and the second screw hole 52 penetrate the molded resin 50 along the third direction DR3. From another perspective, the first screw hole 51 and the second screw hole 52 penetrate the molded resin 50 along the thickness direction. The third direction DR3 is a direction perpendicular to the first direction DR1 and the second direction DR2. The first screw hole 51 is disposed near the third side 50c. The first screw hole 51 may reach the third side 50c. The second screw hole 52 is disposed near the fourth side 50d. The second screw hole 52 may reach the fourth side 50d.

[0026] An imaginary line passing through the center of the first screw hole 51 in the second direction DR2 and the center of the second screw hole 52 in the second direction DR2 is defined as a first imaginary line L1. The first imaginary line L1 is along the first direction DR1. The first imaginary line L1 is located closer to the second side 50b than the center of the molded resin 50 in the second direction DR2.

[0027] The lead frame 60 has a plurality of frames 61. The frame 61 has a die pad portion 62 and a lead portion 63. The lead frame 60 further has a plurality of leads 64. The frame 61 on which the reverse conducting IGBT 11a, the reverse conducting IGBT 11b, and the reverse conducting IGBT 11c are arranged is referred to as a frame 61a.

[0028] The frame 61 in which the reverse conducting IGBT 11d is arranged, the frame 61 in which the reverse conducting IGBT 11e is arranged, and the frame 61 in which the reverse conducting IGBT 11f is arranged are referred to as frames 61b, 61c, and 61d, respectively. The frame 61 in which the control element 20 and the control element 30 are arranged is referred to as frame 61e. The frame 61 in which the bootstrap diode 40a is arranged, the frame 61 in which the bootstrap diode 40b is arranged, and the frame 61 in which the bootstrap diode 40c is arranged are referred to as frames 61f, 61g, and 61h, respectively.

[0029] The reverse conducting IGBT 11a, the reverse conducting IGBT 11b, and the reverse conducting IGBT 11c are arranged on the die pad portion 62 of the frame 61a. A bonding material 65 is arranged between the die pad portion 62 of the frame 61a and the reverse conducting IGBT 11a, between the die pad portion 62 of the frame 61a and the reverse conducting IGBT 11b, and between the die pad portion 62 of the frame 61a and the reverse conducting IGBT 11c. As a result, the collector electrode of the reverse conducting IGBT 11a, the collector electrode of the reverse conducting IGBT 11b, and the collector electrode of the reverse conducting IGBT 11c are connected to the die pad portion 62 of the frame 61a. The bonding material 65 is formed of, for example, a solder alloy.

[0030] The lead portion 63 of the frame 61a corresponds to the inverter power supply terminal 10a. The lead portion 63 of the frame 61a protrudes from the second side 50b in a plan view.

[0031] The reverse conducting IGBT 11d, the reverse conducting IGBT 11e, and the reverse conducting IGBT 11f are arranged on the die pad parts 62 of the frames 61b, 61c, and 61d, respectively. A bonding material 65 is arranged between the die pad part 62 of the frame 61b and the reverse conducting IGBT 11d, between the die pad part 62 of the frame 61c and the reverse conducting IGBT 11e, and between the die pad part 62 of the frame 61d and the reverse conducting IGBT 11f. As a result, the collector electrode of the reverse conducting IGBT 11d, the collector electrode of the reverse conducting IGBT 11e, and the collector electrode of the reverse conducting IGBT 11f are connected to the die pad parts 62 of the frames 61b, 61c, and 61d, respectively.

[0032] An emitter electrode of the reverse conducting IGBT 11a, an emitter electrode of the reverse conducting IGBT 11b, and an emitter electrode of the reverse conducting IGBT 11c are connected to a frame 61b, a frame 61c, and a frame 61d, respectively, by bonding wires (not shown).

[0033] The lead portions 63 of the frames 61b, 61c, and 61d correspond to the output terminals 10b, 10c, and 10d, respectively. The lead portions 63 of the frames 61b, 61c, and 61d protrude from the second side 50b in a plan view.

[0034] The reverse conducting IGBT11a, the reverse conducting IGBT11b, the reverse conducting IGBT11c, the reverse conducting IGBT11d, and the reverse conducting IGBT11e are arranged in a row along the first direction DR1. A virtual line passing through the center of the reverse conducting IGBT11a, the reverse conducting IGBT11b, the reverse conducting IGBT11c, the reverse conducting IGBT11d, and the reverse conducting IGBT11e in the second direction DR2 is defined as a second virtual line L2. The second virtual line L2 is aligned along the first direction DR1. The distance between the first virtual line L1 and the second virtual line L2 is 2 mm or less. It is preferable that the first virtual line L1 and the second virtual line L2 are on the same line.

[0035] The control element 20 and the control element 30 are arranged on the die pad portion 62 of the frame 61e. The control element 20 and the control element 30 are aligned along a first direction DR1 in a plan view. The control element 20 and the control element 30 are located closer to the first side 50a than the first virtual straight line L1 in a plan view. The lead portion 63 of the frame 61 protrudes from the first side 50a in a plan view.

[0036] The bootstrap diodes 40a, 40b, and 40c are arranged on the die pad portions 62 of the frames 61f, 61g, and 61h, respectively. The bootstrap diodes 40a, 40b, and 40c are aligned along the first direction DR1 in a plan view. The bootstrap diodes 40a, 40b, and 40c are located closer to the first side 50a than the control element 20 and the control element 30 in a plan view.

[0037] Although not shown, bonding materials 65 are arranged between the die pad portion 62 of the frame 61f and the bootstrap diode 40a, between the die pad portion 62 of the frame 61g and the bootstrap diode 40b, and between the die pad portion 62 of the frame 61h and the bootstrap diode 40c. As a result, the anode electrode of the bootstrap diode 40a, the anode electrode of the bootstrap diode 40b, and the anode electrode of the bootstrap diode 40c are connected to the die pad portions 62 of the frames 61f, 61g, and 61h, respectively.

[0038] The lead portions 63 of the frames 61f, 61g, and 61h correspond to the driving power supply terminals 20b, 20c, and 20d, respectively. The lead portions 63 of the frames 61f, 61g, and 61h protrude from the first side 50a in a plan view.

[0039] A part of the lead 64 protrudes from the first side 50a, the second side 50b, or the third side 50c in a plan view. Among the multiple leads 64, those protruding from the second side 50b in a plan view are referred to as lead 64a, lead 64b, and lead 64c. The emitter electrode of the reverse conducting IGBT 11d, the emitter electrode of the reverse conducting IGBT 11e, and the emitter electrode of the reverse conducting IGBT 11f are connected to the lead 64a, lead 64b, and lead 64c by bonding wires (not shown), respectively. The lead 64a, lead 64b, and lead 64c correspond to the output terminal 10e, the output terminal 10f, and the output terminal 10g, respectively.

[0040] One of the leads 64 is a lead 64d. The lead 64d has a first portion 64da extending along a first direction DR1 in a plan view and a second portion 64db extending along a second direction DR2 in a plan view. The first portion 64da passes between the frame 61f, the frame 61g, and the frame 61h and the frame 61e in a plan view. An end of the first portion 64da opposite to the second portion 64db protrudes from the third side 50c in a plan view. An end of the second portion 64db opposite to the first portion 64da protrudes from the first side 50a in a plan view.

[0041] The lead 64d is connected to the control element 20 by a bonding wire (not shown). The lead 64d is also connected to the cathode electrode of the bootstrap diode 40a, the cathode electrode of the bootstrap diode 40b, and the cathode electrode of the bootstrap diode 40c by bonding wires (not shown). The end of the first portion 64da protruding from the molded resin 50 corresponds to the control power supply terminal 20a.

[0042] A distance DIS is defined as the distance between the first imaginary line L1 and the end (control power terminal 20a) of the first portion 64da protruding from the mold resin 50. The distance DIS is preferably 3 mm or more.

[0043] The heat sink 70 is made of a material with high thermal conductivity. The heat sink 70 is made of, for example, copper (Cu) or a copper alloy. An imaginary line passing through the center of the heat sink 70 in the second direction DR2 and extending along the first direction DR1 is defined as a third imaginary line L3. It is preferable that the distance between the third imaginary line L3 and the first imaginary line L1 is 2 mm or less. It is more preferable that the third imaginary line L3 is collinear with the first imaginary line L1.

[0044] The heat sink 70 has a first main surface 70a and a second main surface 70b. The first main surface 70a and the second main surface 70b are end surfaces of the heat sink 70 in the third direction DR3. The second main surface 70b is the opposite surface to the first main surface 70a. The heat sink 70 is sealed in the molded resin 50 with the second main surface 70b exposed from the bottom surface of the molded resin 50. The second main surface 70b comes into contact with a heat sink when the semiconductor device 100 is attached to the heat sink, such as a heat sink fin.

[0045] The insulating sheet 80 is disposed on the heat sink 70. More specifically, the insulating sheet 80 is disposed on the first main surface 70a. The insulating sheet 80 is formed of an electrically insulating material. The insulating sheet 80 is formed of, for example, a silicone resin mixed with a ceramic filler. The frames 61a, 61b, 61c, and 61d are disposed on the insulating sheet 80.

[0046] (Effects of the semiconductor device 100) The effects of the semiconductor device 100 will be described below.

[0047] The semiconductor device 100 is attached to the heat dissipation device by passing a screw through the first screw hole 51 and the second screw hole and screwing the screw into the heat dissipation device. Therefore, the adhesion between the semiconductor device 100 and the heat dissipation device is highest on the first virtual line L1. In the semiconductor device 100, the distance between the first virtual line L1 and the second virtual line L2 is 2 mm or less, so that the center of the reverse conducting IGBT 11 in the second direction DR2 overlaps with the point where the adhesion between the semiconductor device 100 and the heat dissipation device is highest in a plan view. In this way, the semiconductor device 100 can improve heat dissipation when screwed to the heat dissipation device.

[0048] When the distance between the first virtual line L1 and the third virtual line L3 is 2 mm or less, the center of the heat sink 70 in the second direction DR2 coincides with the location where the adhesion between the semiconductor device 100 and the heat sink is strongest in a plan view. Therefore, in this case, the adhesion between the heat sink 70 and the heat sink is increased, and the heat dissipation when screwed to the heat sink can be further improved.

[0049] If the mold resin 50 is made of a cure-shrinkage type resin material, the semiconductor device 100 may warp around the reverse conducting IGBT 11, which is made of a hard material. In the semiconductor device 100, the distance between the first virtual line L1 and the second virtual line L2 is 2 mm or less, so that even if a cure-shrinkage type resin material is used for the mold resin 50, the warp of the semiconductor device 100 is corrected when the semiconductor device 100 is screwed to the heat dissipation device, thereby improving the heat dissipation performance when the semiconductor device 100 is screwed to the heat dissipation device.

[0050] By making the end of the first portion 64da protrude from the third side 50c to form the control power terminal 20a, the semiconductor device 100 can be made smaller. However, since a positive voltage is applied to the control power terminal 20a, it is necessary to ensure a spatial distance and a creepage distance between the control power terminal 20a, i.e., the end of the first portion 64da exposed from the molded resin 50, and the screw passed through the first screw hole 51. In the semiconductor device 100, the first virtual straight line L1 is shifted toward the second side 50b from the center in the second direction DR2 of the molded resin 50, so that a distance DIS of 3 mm or more can be ensured. Therefore, according to the semiconductor device 100, insulation between the control power terminal 20a and the screw passed through the first screw hole 51 can be ensured.

[0051] (Modification) In the above example, the case has been described where the power semiconductor element of the semiconductor device 100 is the reverse conducting IGBT 11. However, the semiconductor device 100 may have a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) instead of the reverse conducting IGBT 11. Also, a capacitor may be used instead of the bootstrap diode 40.

[0052] Embodiment 2 A semiconductor device according to the second embodiment will be described. The semiconductor device according to the second embodiment is referred to as semiconductor device 200. Here, differences from semiconductor device 100 will be mainly described, and overlapping descriptions will not be repeated.

[0053] (Configuration of the semiconductor device 200) The configuration of the semiconductor device 200 will be described below.

[0054] Similar to the semiconductor device 100, the semiconductor device 200 includes a plurality of reverse conducting IGBTs 11, a control element 20, a control element 30, a plurality of bootstrap diodes 40, a molded resin 50, and a heat sink 70. Also in the semiconductor device 100, the distance between the first imaginary line L1 and the second imaginary line L2 is 2 mm or less, and the distance between the first imaginary line L1 and the third imaginary line L3 is 2 mm or less.

[0055] Fig. 4 is a cross-sectional view of the semiconductor device 200. Fig. 4 shows a cross section taken along a line corresponding to III-III in Fig. 2. As shown in Fig. 4, the semiconductor device 200 has a plurality of conductor patterns 66 and an insulating layer 81 instead of the lead frame 60 and the insulating sheet 80. In this respect, the configuration of the semiconductor device 200 differs from that of the semiconductor device 100.

[0056] The insulating layer 81 is disposed on the heat sink 70. More specifically, the insulating layer 81 is disposed on the first main surface 70a. The insulating layer 81 has a first main surface 81a and a second main surface 81b. The first main surface 81a and the second main surface 81b are end surfaces of the insulating layer 81 in the third direction DR3. The second main surface 81b is the opposite surface to the first main surface 81a and faces the heat sink 70. The insulating layer 81 is made of an electrically insulating material. The insulating layer 81 is made of, for example, ceramic.

[0057] The conductor pattern 66 is disposed on the insulating layer 81. More specifically, the conductor pattern 66 is disposed on the first main surface 81a. Of the plurality of conductor patterns 66, the one on which the reverse conducting IGBT 11a, the reverse conducting IGBT 11b, and the reverse conducting IGBT 11c are disposed is referred to as the conductor pattern 66a. Of the plurality of conductor patterns 66, the one on which the reverse conducting IGBT 11d is disposed, the one on which the reverse conducting IGBT 11e is disposed, and the one on which the reverse conducting IGBT 11f is disposed are referred to as the conductor pattern 66b, the conductor pattern 66b, and the conductor pattern 66c, respectively.

[0058] A bonding material 65 is disposed between the conductor pattern 66a and the reverse conducting IGBT 11a, between the conductor pattern 66a and the reverse conducting IGBT 11b, and between the conductor pattern 66a and the reverse conducting IGBT 11c. A bonding material 65 is also disposed between the conductor pattern 66b and the reverse conducting IGBT 11d, between the conductor pattern 66c and the reverse conducting IGBT 11e, and between the conductor pattern 66d and the reverse conducting IGBT 11f.

[0059] (Effects of the semiconductor device 200) The effects of the semiconductor device 200 will be described below.

[0060] In the semiconductor device 200, the distance between the first virtual line L1 and the second virtual line L2 is 2 mm or less, and the distance between the first virtual line L1 and the third virtual line L3 is 2 mm or less. Therefore, in the semiconductor device 200, the center in the second direction DR2 of the reverse conducting IGBT 11 and the center in the second direction DR2 of the heat sink 70 overlap with the location where the adhesion between the semiconductor device 200 and the heat sink is highest in a plan view. In this way, the semiconductor device 200 can also improve the heat dissipation when screwed to the heat sink.

[0061] The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. The basic scope of the present disclosure is defined by the claims rather than the above embodiments, and it is intended to include all modifications within the scope and meaning equivalent to the claims. [Explanation of symbols]

[0062] 100, 200 semiconductor device, 10 inverter circuit, 10a inverter power supply terminal, 10b, 10c, 10d, 10e, 10f, 10g output terminal, 11, 11a, 11b, 11c, 11d, 11e, 11f reverse conducting IGBT, 12 IGBT, 13 freewheel diode, 20, 30 control element, 20a control power supply terminal, 20b, 20c, 20d drive power supply terminal, 40, 40a, 40b, 40c bootstrap diode, 50 mold resin, 50a first side, 50b second side, 50c third side, 50d fourth side, 51 first screw hole, 52 second screw hole, 60 lead frame, 61, 61a, 61b, 61c, 61d, 61e, 61f, 61g, 61h frame, 62 Die pad portion, 63 lead portion, 64, 64a, 64b, 64c, 64d leads, 64da first portion, 64db second portion, 65 bonding material, 66, 66a, 66b, 66c, 66d conductor pattern, 70 heat sink, 70a first main surface, 70b second main surface, 80 insulating sheet, 81 insulating layer, 81a first main surface, 81b second main surface, DR1 first direction, DR2 second direction, DR3 third direction, L1 first virtual line, L2 second virtual line, L3 third virtual line, DIS distance.

Claims

1. A power semiconductor element; a molding resin that encapsulates the power semiconductor element, the molding resin has a rectangular shape in a plan view, the rectangular shape being configured with a first side and a second side extending along a first direction and a third side and a fourth side extending along a second direction perpendicular to the first direction, The length of the first side is greater than the length of the third side, a first screw hole and a second screw hole are formed in the molding resin, the first screw hole and the second screw hole penetrating the molding resin along a third direction perpendicular to the first direction and the second direction; a first virtual line passing through a center of the first screw hole in the second direction and a center of the second screw hole in the second direction extends along the first direction and is located on the second side of the mold resin relative to a center of the mold resin in the second direction, a distance between a second imaginary line passing through a center of the power semiconductor element in the second direction and extending along the first direction and the first imaginary line is 2 mm or less; a bootstrap diode sealed with the molding resin, a first terminal, and a second terminal; a portion of the first terminal protruding from the first side along the second direction, a portion of the second terminal protrudes from the third side along the first direction, the first terminal and the second terminal are electrically connected to each other via the bootstrap diode.

2. The semiconductor device according to claim 1 , wherein the distance between said second terminal and said first virtual line is 3 mm or more.

3. 3. The semiconductor device according to claim 1, wherein the molding resin is made of a cure shrinkage type resin material.

4. A power semiconductor element; a molding resin that encapsulates the power semiconductor element, the molding resin has a rectangular shape in a plan view, the rectangular shape being configured with a first side and a second side extending along a first direction and a third side and a fourth side extending along a second direction perpendicular to the first direction, The length of the first side is greater than the length of the third side, a first screw hole and a second screw hole are formed in the molding resin, the first screw hole and the second screw hole penetrating the molding resin along a third direction perpendicular to the first direction and the second direction; a first virtual line passing through a center of the first screw hole in the second direction and a center of the second screw hole in the second direction extends along the first direction and is located on the second side of the mold resin relative to a center of the mold resin in the second direction, a distance between a second imaginary line passing through a center of the power semiconductor element in the second direction and extending along the first direction and the first imaginary line is 2 mm or less; A heat sink; an insulating sheet disposed on the heat sink; a lead frame having a die pad disposed on the insulating sheet; a bonding material disposed on the die pad, the heat sink, the insulating sheet, and the lead frame are sealed with the molding resin such that the heat sink is exposed from a bottom surface of the molding resin; the power semiconductor element is disposed on the bonding material, a distance between the first imaginary line and a third imaginary line passing through a center of the heat sink in the second direction and aligned in the first direction is 2 mm or less.

5. A power semiconductor element; a molding resin that encapsulates the power semiconductor element, the molding resin has a rectangular shape in a plan view, the rectangular shape being configured with a first side and a second side extending along a first direction and a third side and a fourth side extending along a second direction perpendicular to the first direction, The length of the first side is greater than the length of the third side, a first screw hole and a second screw hole are formed in the molding resin, the first screw hole and the second screw hole penetrating the molding resin along a third direction perpendicular to the first direction and the second direction; a first virtual line passing through a center of the first screw hole in the second direction and a center of the second screw hole in the second direction extends along the first direction and is located on the second side of the mold resin relative to a center of the mold resin in the second direction, a distance between a second imaginary line passing through a center of the power semiconductor element in the second direction and extending along the first direction and the first imaginary line is 2 mm or less; A heat sink; an insulating layer disposed on the heat sink; A conductor pattern disposed on the insulating layer; A bonding material is disposed on the conductive pattern. the heat sink, the insulating layer, and the conductor pattern are sealed with the molding resin such that the heat sink is exposed from a bottom surface of the molding resin; the power semiconductor element is disposed on the bonding material, a distance between the first imaginary line and a third imaginary line passing through a center of the heat sink in the second direction and aligned in the first direction is 2 mm or less.

6. 6. The semiconductor device according to claim 1, wherein the power semiconductor element is a reverse conducting IGBT.

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