Semiconductor Device

Abstract

The present invention provides a semiconductor device which is capable of improving the adhesion between a resin part and a lead, while ensuring the adequate operation of the semiconductor device. This semiconductor device is provided with a semiconductor element 1, a first lead 2 having a first pad part 21, a second lead 3 having a second pad part 31, a conduction member 61 and a resin part 8; the first pad part 21 has a first pad main surface 21a that comprises a first smooth region 211 to which an element back surface 1b is bonded, and a first roughened region 212 which is at a distance from the semiconductor element 1 when viewed along the z direction, while being rougher than the first smooth region 211; and the second pad part 31 has a second pad main surface 31a that comprises a second smooth region 311 to which a second bonding part 612 is bonded, and a second roughened region 312 which is at a distance from the second bonding part 612 when viewed along the z direction, while being rougher than the second smooth region 311.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in the document includes a semiconductor element, a plurality of leads, a wire, and a resin part. The semiconductor element is mounted on a certain lead. The wire is connected to the semiconductor element and another lead. The resin part covers the semiconductor element, the wire, and the plurality of leads. A plating film is formed on the surfaces of the plurality of leads. The plating film is intended to increase the surface area of ​​the leads, thereby improving adhesion between the leads and the resin part. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-303215 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, measures such as plating films for improving adhesion may have undesirable effects on the semiconductor device.

[0005] The present disclosure has been devised in light of the above-mentioned circumstances, and has an object to provide a semiconductor device that can improve the adhesion between the resin part and the leads while ensuring proper operation of the semiconductor device. [Means for solving the problem]

[0006] A semiconductor device provided by the present disclosure comprises: a semiconductor element having an element main surface and an element back surface facing opposite each other in a first direction; a first lead having a first pad portion on which the semiconductor element is mounted; a second lead having a second pad portion arranged alongside the first pad portion in a second direction perpendicular to the first direction; a conductive member having a first bonding portion bonded to the semiconductor element and a second bonding portion bonded to the second pad portion; and a resin portion covering the semiconductor element, the conductive member, the first pad portion and the second pad portion, wherein the first pad portion has a first pad main surface including a first smooth region to which the element back surface is bonded and a first roughened region that is distant from the semiconductor element as viewed along the first direction and is rougher than the first smooth region, and the second pad portion has a second pad main surface including a second smooth region to which the second bonding portion is bonded and a second roughened region that is distant from the second bonding portion as viewed along the first direction and is rougher than the second smooth region. Effect of the Invention

[0007] According to an embodiment of the present disclosure, it is possible to improve the adhesion between the resin portion and the leads while ensuring proper operation of the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 3] 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 4] 4 is a plan view showing a second pad portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Diagram 5]4 is a plan view showing a second pad portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 6] FIG. 4 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] 1 is an enlarged cross-sectional view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 8] 3 is an enlarged cross-sectional view showing an example of a main portion of a first rough region of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 9] 4 is an enlarged cross-sectional view showing an example of a main portion of a second rough region of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 10] FIG. 4 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 4 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 4 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] 10 is an enlarged cross-sectional view showing a main portion of a second rough region of a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 14] FIG. 4 is a plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 15] FIG. 11 is a plan view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 16] FIG. 4 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 17] FIG. 4 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 18] 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 17. [Figure 19] FIG. 18 is a cross-sectional view taken along line XIX-XIX in FIG. [Figure 20] FIG. 18 is a cross-sectional view taken along the line XX-XX in FIG. 17. [Figure 21] FIG. 11 is a plan view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used merely as labels and are not intended to dictate any ordering of their objects.

[0012] First Embodiment 1 to 12 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a conductive member 61, a conductive member 62, and a resin part 8.

[0013] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a perspective view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1. FIG. 4 is a plan view showing the second pad portion of the semiconductor device A1. FIG. 5 is a plan view showing the second pad portion of the semiconductor device A1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is an enlarged cross-sectional view showing the semiconductor device A1. FIG. 8 is an enlarged cross-sectional view showing an example of a first roughened region of the semiconductor device A1. FIG. 9 is an enlarged cross-sectional view showing an example of a second roughened region of the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line XX in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. In these figures, the z direction corresponds to the first direction of the present disclosure, the y direction corresponds to the second direction of the present disclosure, and the x direction corresponds to the third direction of the present disclosure.

[0014] [Semiconductor element 1] The semiconductor element 1 is an electronic component that is the core of the function of the semiconductor device A1 and is made of a semiconductor material. Examples of such semiconductor materials include, but are not limited to, Si (silicon), SiC (silicon carbide), and GaAs (gallium arsenide). The semiconductor element 1 is, for example, a power semiconductor chip such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In this embodiment, the semiconductor element 1 is a MOSFET, but is not limited thereto and may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor), or diodes such as a Schottky barrier diode or a fast recovery diode.

[0015] The semiconductor device 1 of this embodiment has a main surface 1a, a back surface 1b, a plurality of main surface electrodes 11, and a drain electrode 12. The main surface 1a faces one side in the z direction (upper side in FIGS. 1, 2, and 6). The back surface 1b faces the other side opposite the main surface 1a in the z direction (lower side in FIGS. 1, 2, and 6).

[0016] As shown in FIGS. 1 to 3, a plurality of principal surface electrodes 11 are formed on the element principal surface 1a. In this embodiment, the plurality of principal surface electrodes 11 include a gate electrode 111 and a source electrode 112. The gate electrode 111 is an electrode to which a gate voltage is applied to the semiconductor device A1 as a switching element. The source electrode 112 is an electrode used as an input / output terminal. In the illustrated example, the gate electrode 111 is smaller than the source electrode 112. The gate electrode 111 is also arranged biased toward one side in the x direction of the element principal surface 1a (the left side in FIG. 3). The drain electrode 12 is formed on the element rear surface 1b, and is an electrode used as an input / output terminal together with the source electrode 112.

[0017] [First Lead 2] The first lead 2 is a member on which the semiconductor element 1 is mounted. The first lead 2 is made of a first metal, which is a conductive material. In this embodiment, the first metal may be, for example, Cu, but is not limited thereto, and may be Ni (nickel), an alloy of Cu or Ni, or a 42 alloy. The first lead 2 is formed into an appropriate shape by punching, cutting, bending, or the like from a thin metal plate such as Cu having a rectangular shape in a plan view. As shown in FIGS. 1 to 3, 6, 10, and 11, the first lead 2 in this embodiment has a first pad portion 21, an extension portion 22, a protrusion portion 23, and a connection portion 24.

[0018] The first pad portion 21 has a first pad main surface 21a and a first pad back surface 21b. The first pad main surface 21a faces one side in the z direction, and the first pad back surface 21b faces the other side in the z direction. The semiconductor element 1 is mounted on the first pad main surface 21a. The shape of the first pad portion 21 is not limited in any way, and in the illustrated example, it is substantially rectangular when viewed along the z direction. In addition, as shown in FIG. 6 and FIG. 10 to FIG. 12, in this embodiment, the first pad back surface 21b is exposed from the resin portion 8.

[0019] The first pad main surface 21a has a first smooth region 211 and a first rough region 212. In Figs. 2 to 5, hatching consisting of a plurality of discrete points indicates a region roughened by the roughening means. In Figs. 2 to 5, hatching consisting of a plurality of parallel lines indicates a plated region. Fig. 7 is an enlarged cross-sectional view of a main part of Fig. 6. The first pad main surface 21a in the illustrated example is a surface on which plating or the like is not applied and on which a first metal such as Cu is exposed. The first smooth region 211 is a region to which the element back surface 1b of the semiconductor element 1 is bonded. In this embodiment, the drain electrode 12 formed on the element back surface 1b is conductively bonded to the first smooth region 211 by the conductive bonding material 19. In the illustrated example, the conductive bonding material 19 spreads over substantially the entire area of ​​the first smooth region 211. There is no limitation on which part of the first smooth region 211 the conductive bonding material 19 is attached to. The first smooth region 211 includes the entire semiconductor element 1 when viewed along the z direction, and extends in all directions from the semiconductor element 1. The shape of the first smooth region 211 is not limited in any way, and in the illustrated example, it is substantially rectangular.

[0020] The first rough region 212 is a region that is distant from the semiconductor element 1 when viewed along the z direction and is rougher than the first smooth region 211. There is no limitation on the means by which the first rough region 212 is rougher than the first smooth region 211. For example, the first smooth region 211 may be formed of a surface of a metal plate that is a material for a general lead frame, and the first rough region 212 may be roughened by a roughening means using a laser. There is no limitation on the type of laser used for roughening, and examples thereof include a UV laser, an IR laser, and a Green laser. The first rough region 212 in the illustrated example reaches the edge of the first pad main surface 21a.

[0021] The specific shape, size, and the like of the first rough region 212 are not limited in any way. In this embodiment, as shown in FIG. 3, the first rough region 212 includes a first portion 2121, a second portion 2122, and a pair of third portions 2123. The first portion 2121 is located on one side of the first smooth region 211 in the y direction (the side on which a second pad portion 31 and a second pad portion 41 described later are located). The second portion 2122 is located on the opposite side of the first smooth region 211 to the first portion 2121 (and a second pad portion 31 and a second pad portion 41 described later). The pair of third portions 2123 are adjacent to both sides of the first smooth region 211 in the x direction. In the illustrated example, the first rough region 212 includes a first portion 2121, a second portion 2122, and a pair of third portions 2123, and thereby forms a rectangular ring shape surrounding the first smooth region 211 when viewed along the z direction.

[0022] Here, an example of the dimensions of the first rough region 212 will be given. For example, the y-direction dimension of the first portion 2121 is smaller than the y-direction dimension of a portion of the first smooth region 211 located between the first portion 2121 and the semiconductor element 1 in the y direction. Moreover, the y-direction dimension of the second portion 2122 is smaller than the y-direction dimension of a portion of the first smooth region 211 located between the second portion 2122 and the semiconductor element 1 in the y direction. Moreover, the x-direction dimension of the third portion 2123 is smaller than the x-direction dimension of a portion of the first smooth region 211 located between the third portion 2123 and the semiconductor element 1 in the x direction.

[0023] FIG. 8 is a cross-sectional view further enlarging a part of the first rough region 212. The first rough region 212 in the illustrated example is roughened using, for example, a green laser. This first rough region 212 has a plurality of recesses 212a and a plurality of protrusions 212b. The plurality of recesses 212a and the plurality of protrusions 212b are arranged alternately. The first rough region 212 having such a plurality of recesses 212a and a plurality of protrusions 212b is configured such that a plurality of grooves are formed in the first pad main surface 21a by, for example, repeatedly scanning the green laser in a predetermined direction. The first rough region 212 consisting of the plurality of recesses 212a and the plurality of protrusions 212b may be configured to include a plurality of recesses 212a, each of which is, for example, circular.

[0024] Moreover, the first rough region 212 in the illustrated example has a plurality of fine protrusions 212c. The plurality of fine protrusions 212c are fine protrusions whose size is clearly smaller than that of the recesses 212a and the protrusions 212b and which exist on the surface of the recesses 212a or the protrusions 212b. The inventors' research has revealed that when the first rough region 212 is formed using a green laser, the plurality of fine protrusions 212c are present in substantially the entire area of ​​the first rough region 212 and each of the fine protrusions tends to have a complex shape.

[0025] 3, 11 and 12, the first pad portion 21 of this embodiment is formed with a locking portion 251. The locking portion 251 is a portion having a shape that protrudes in the x direction or the y direction from the peripheral edge of the first pad portion 21. The locking portion 251 is provided to increase the holding force of the resin portion 8 to hold the first pad portion 21, for example, by engaging with a part of the resin portion 8.

[0026] 1 to 3 and 10, the extension portion 22 is a portion extending to one side in the y direction (the side where the second pad portion 31 and the second pad portion 41 described later are located) with respect to the first pad portion 21. The shape of the extension portion 22 is not particularly limited, and in the illustrated example, the extension portion 22 has a base portion 221, a bent portion 222 and a tip portion 223.

[0027] The root portion 221 extends from the first pad portion 21 to one side in the y direction and has a shape along the y direction. The bent portion 222 is connected to the y-direction tip of the root portion 221 and is a portion bent to one side in the z direction (the upper side in FIG. 10) when viewed along the x direction. The tip portion 223 is connected to the bent portion 222 and extends from the bent portion 222 along the y direction to one side in the y direction. In the illustrated example, a part of the tip portion 223 protrudes from the resin portion 8.

[0028] 1 to 3 and 10, protrusion 23 is a portion located on the other side in the y direction with respect to first pad portion 21. The shape of protrusion 23 is not limited in any way, and in the illustrated example, it is a substantially elongated rectangle with the x direction as the longitudinal direction when viewed along the z direction, and most of it is exposed from resin portion 8.

[0029] The connecting portion 24 is a portion that connects the first pad portion 21 and the protruding portion 23. As shown in Fig. 3, the connecting portion 24 in the illustrated example has a through hole 241. The through hole 241 penetrates the connecting portion 24 in the z direction.

[0030] Moreover, the extending portion 22 of the present embodiment has a plated portion 224. The plated portion 224 is a metal layer made of a second metal formed by plating on a first metal such as Cu constituting the first lead 2. The second metal constituting the plated portion 224 is not limited in any way and is, for example, Ni, Ag, or the like.

[0031] [Second Lead 3] The second lead 3 is a member to which a conductive member 61 described later is joined. The second lead 3 is made of a first metal, which is a conductive material. In this embodiment, the first metal may be, for example, Cu, but is not limited thereto, and may be Ni (nickel), an alloy of Cu or Ni, or a 42 alloy. The second lead 3 is formed into an appropriate shape by punching, cutting, bending, or the like from a thin metal plate such as Cu having a rectangular shape in a plan view. As shown in FIGS. 1 to 4 and 6, the second lead 3 in this embodiment has a second pad portion 31 and a terminal portion 32.

[0032] The second pad portion 31 has a second pad main surface 31a and a second pad back surface 31b. The second pad main surface 31a faces one side in the z direction, and the second pad back surface 31b faces the other side in the z direction. A conductive member 61 described below is bonded to the second pad main surface 31a. The shape of the second pad portion 31 is not limited in any way, and in the illustrated example, it is substantially rectangular when viewed along the z direction. As shown in FIG. 6, in this embodiment, the second pad main surface 31a and the second pad back surface 31b are covered with a resin part 8.

[0033] 1 to 3 and 6, in this embodiment, the second pad portion 31 is located on one side in the y direction with respect to the first pad portion 21 when viewed along the z direction, and is located on one side in the x direction with respect to the extending portion 22. In addition, the second pad portion 31 is located on one side in the z direction with respect to the first pad portion 21 and the extending portion 22 (upper side in FIG. 6).

[0034] As shown in FIG. 3 and FIG. 4, the second pad main surface 31a has a second smooth region 311 and a second rough region 312. FIG. 7 is an enlarged cross-sectional view of a main portion of FIG. 6. The second pad main surface 31a in the illustrated example is plated. The second metal constituting the metal layer formed by plating is not limited in any way, and examples thereof include Ni and Ag. The second smooth region 311 is a region to which a second bonding portion 612 (described later) of the conductive member 61 is bonded. The second smooth region 311 includes the entire second bonding portion 612 when viewed along the z direction, and extends in all directions from the semiconductor element 1. The shape of the second smooth region 311 is not limited in any way, and is substantially rectangular in the illustrated example. The second smooth region 311 in the illustrated example is a plated smooth region. The x-direction dimension of the second smooth region 311 is preferably at least twice the x-direction dimension of the second bonding portion 612.

[0035] The second rough region 312 is apart from the second bonding portion 612 as viewed along the z direction and is rougher than the second smooth region 311. There is no limitation on the means by which the second rough region 312 is rougher than the second smooth region 311. For example, the second smooth region 311 may be formed of a surface of a metal plate that is a material for a general lead frame, and the second rough region 312 may be roughened by a roughening means using a laser. There is no limitation on the type of laser used for roughening, and examples thereof include a UV laser, an IR laser, and a Green laser. In the illustrated example, the second rough region 312 reaches the edge of the second pad main surface 31a.

[0036] The specific shape, size, and the like of the second rough region 312 are not limited at all. In this embodiment, as shown in FIG. 4, the second rough region 312 includes a first portion 3121, a second portion 3122, and a pair of third portions 3123. The first portion 3121 is located on the other side in the y direction (the side where the first pad portion 21 is located) with respect to the second smooth region 311. The second portion 3122 is located on the opposite side of the first portion 3121 (and the first pad portion 21) with respect to the second smooth region 311. The pair of third portions 3123 are adjacent to both sides of the second smooth region 311 in the x direction. In the illustrated example, the second rough region 312 includes the first portion 3121, the second portion 3122, and the pair of third portions 3123, and thereby forms a rectangular ring shape surrounding the second smooth region 311 when viewed along the z direction.

[0037] FIG. 9 is a cross-sectional view further enlarging a part of the second rough region 312. The second rough region 312 in the illustrated example is roughened using, for example, a green laser. This second rough region 312 has a plurality of recesses 312a and a plurality of protrusions 312b. The plurality of recesses 312a and the plurality of protrusions 312b are arranged alternately. The second rough region 312 having such a plurality of recesses 312a and a plurality of protrusions 312b is configured such that a plurality of grooves are formed in the second pad main surface 31a by, for example, repeatedly scanning the green laser in a predetermined direction. The second rough region 312 consisting of the plurality of recesses 312a and the plurality of protrusions 312b may be configured to include a plurality of recesses 312a, each of which is, for example, circular.

[0038] In the illustrated example, the plurality of recesses 312a are regions where Cu, which is the first metal of second lead 3, is exposed. On the other hand, the plurality of protrusions 312b are the second metal constituting metal layer 319 formed by plating, and are composed of, for example, Ni. Such second rough region 312 has a configuration that is seen when second rough region 312 is formed by roughening means such as a Green laser after covering the first metal with metal layer 319 by plating. For example, metal layer 319 has a thickness of 2 μm to 4 μm, and the uneven dimension of second rough region 312 (the dimension from the bottom of recess 312a to the top of protrusion 312b) is larger than the thickness of metal layer 319, and is, for example, 5 μm to 8 μm.

[0039] Furthermore, second rough region 312 in the illustrated example has a plurality of fine protrusions 312c. The size of each of the plurality of fine protrusions 312c is clearly smaller than that of recesses 312a and protrusions 312b, and is a finer protrusion present on the surface of recesses 312a and protrusions 312b. The inventor's research has revealed that when second rough region 312 is formed using a green laser, a plurality of fine protrusions 312c are present in substantially the entire area of ​​second rough region 312, and each of the fine protrusions tends to have a complex shape.

[0040] 1 to 3 and 6, the terminal portion 32 is a portion extending to one side in the y direction with respect to the second pad portion 31. The terminal portion 32 is used, for example, when mounting the semiconductor device A1 on a circuit board or the like. The shape of the terminal portion 32 is not particularly limited, and in the illustrated example, the terminal portion 32 has a root portion 321, a bent portion 322 and a tip portion 323.

[0041] The root portion 321 extends from the second pad portion 31 to one side in the y direction and has a shape along the y direction. A part of the root portion 321 is exposed from the resin portion 8. The bent portion 322 is connected to the tip of the root portion 321 in the y direction and is a portion bent to the other side in the z direction (the lower side in FIG. 6) when viewed along the x direction. The tip portion 323 is connected to the bent portion 322 and extends from the bent portion 322 along the y direction to one side in the y direction.

[0042] [Second Lead 4] The second lead 4 is a member to which a conductive member 62 described later is joined. The second lead 4 is made of a first metal, which is a conductive material. In this embodiment, the first metal may be, for example, Cu, but is not limited thereto, and may be Ni (nickel), an alloy of Cu or Ni, or a Ni-based alloy. The second lead 4 is formed into an appropriate shape by punching, cutting, bending, or the like from a thin metal plate such as Cu having a rectangular shape in a plan view. As shown in FIGS. 1 to 3, 5, and 11, the second lead 4 in this embodiment has a second pad portion 41 and a terminal portion 42.

[0043] The second pad portion 41 has a second pad main surface 41a and a second pad back surface 41b. The second pad main surface 41a faces one side in the z direction, and the second pad back surface 41b faces the other side in the z direction. A conductive member 62 described below is bonded to the second pad main surface 41a. The shape of the second pad portion 41 is not limited in any way, and in the illustrated example, it is substantially rectangular when viewed along the z direction. In addition, as shown in FIG. 6, in this embodiment, the second pad main surface 41a and the second pad back surface 41b are covered with a resin part 8.

[0044] 1 to 3 and 6, in this embodiment, the second pad portion 41 is located on one side in the y direction with respect to the first pad portion 21 when viewed along the z direction, and is located on the other side in the x direction of the extension portion 22. The second pad portion 41 is located on one side in the z direction (upper side in FIG. 10) of the first pad portion 21 and the extension portion 22, and is located at approximately the same position in the z direction as the second pad portion 31.

[0045] As shown in FIG. 3 and FIG. 5, the second pad main surface 41a has a second smooth region 411 and a second rough region 412. The second pad main surface 41a in the illustrated example is plated. The second metal constituting the metal layer formed by plating is not limited in any way, and examples thereof include Ni and Ag. The second smooth region 411 is a region to which a second bonding portion 622 (described later) of the conductive member 62 is bonded. The second smooth region 411 includes the entire second bonding portion 622 when viewed along the z direction, and extends in all directions from the semiconductor element 1. The shape of the second smooth region 411 is not limited in any way, and is substantially rectangular in the illustrated example. The second smooth region 411 in the illustrated example is a plated smooth region. The x-direction dimension of the second smooth region 411 is preferably at least twice the x-direction dimension of the second bonding portion 622.

[0046] The second rough region 412 is a region that is apart from the second bonding portion 622 when viewed along the z direction and is rougher than the second smooth region 411. There is no limitation on the means by which the second rough region 412 is rougher than the second smooth region 411. For example, similar to the second rough region 312, the second smooth region 411 may be formed of a surface of a metal plate that is a material for a general lead frame, and the second rough region 412 may be roughened by a roughening means using a laser. There is no limitation on the type of laser used for roughening, and examples thereof include a UV laser, an IR laser, and a Green laser. In the illustrated example, the second rough region 412 reaches the edge of the second pad main surface 41a.

[0047] The specific shape, size, and the like of the second rough region 412 are not limited at all. In this embodiment, as shown in FIG. 5, the second rough region 412 includes a first portion 4121, a second portion 4122, and a pair of third portions 4123. The first portion 4121 is located on the other side in the y direction (the side where the first pad portion 21 is located) with respect to the second smooth region 411. The second portion 4122 is located on the opposite side of the first portion 4121 (and the first pad portion 21) with respect to the second smooth region 411. The pair of third portions 4123 are adjacent to both sides of the second smooth region 411 in the x direction. In the illustrated example, the second rough region 412 includes the first portion 4121, the second portion 4122, and the pair of third portions 4123, and thus forms a rectangular ring shape surrounding the second smooth region 411 when viewed along the z direction.

[0048] The specific detailed configuration of the second rough region 412 is not limited in any way, and may be the same as the second rough region 412 shown in FIG. 9, for example.

[0049] 1 to 3 and 11, the terminal portion 42 is a portion extending to one side in the y direction with respect to the second pad portion 41. The terminal portion 42 is used, for example, when mounting the semiconductor device A1 on a circuit board or the like. The shape of the terminal portion 42 is not particularly limited, and in the illustrated example, the terminal portion 42 has a root portion 421, a bent portion 422, and a tip portion 423.

[0050] The root portion 421 extends from the second pad portion 41 to one side in the y direction and has a shape along the y direction. A part of the root portion 421 is exposed from the resin portion 8. The bent portion 422 is connected to the tip of the root portion 421 in the y direction and is a portion bent to the other side in the z direction (the lower side in FIG. 6) when viewed along the x direction. The tip portion 423 is connected to the bent portion 422 and extends from the bent portion 422 along the y direction to one side in the y direction.

[0051] There is no limitation on the roughness of the first rough region 212 of the first pad portion 21, the second rough region 312 of the second pad portion 31, and the second rough region 412 of the second pad portion 41. Numerical examples of the roughness of the first rough region 212, the second rough region 312, and the second rough region 412 include, for example, an arithmetic mean curve Sa of the surface roughness of 0.34 to 4.2, a maximum height Sz of 3.6 to 26, and a line roughness of 0.33 to 3.9, and a maximum height Rz of 1.7 to 13. Numerical examples of the roughness of the first rough region 212, the second rough region 312, and the second rough region 412 based on other roughness indices include an arithmetic mean curve Spc of the peaks of 1400 to 5700, and a developed area ratio Sdr of the interface of 0.067 to 2.2.

[0052] As an example of a preferable relationship between the roughness of the first rough region 212 and the roughness of the second rough region 312 or the second rough region 412, the roughness of the first rough region 212 is greater than that of the second rough region 312 or the second rough region 412. One method for realizing such a roughness relationship is to make the number of times that the same location is scanned with a laser in the roughening process for forming the first rough region 212 greater than the number of times that the same location is scanned with a laser in the roughening process for forming the second rough region 312 and the second rough region 412. For example, in forming the second rough region 312 and the second rough region 412, the same location is scanned with a laser once, and in forming the first rough region 212, the same location is scanned with a laser two or more times. In this case, the recesses 212a of the first rough region 212 shown in FIG. 8 may be multi-staged corresponding to the number of scans.

[0053] [Conductive member 61] The conductive member 61 is for electrically connecting the gate electrode 111 of the semiconductor element 1 and the second lead 3. The specific configuration of the conductive member 61 is not limited in any way, and examples thereof include a wire or ribbon made of a metal. Examples of the metal constituting the conductive member 61 include metals such as Au and Al, and alloys thereof. Examples of Al alloys include Al alloys in which any of Fe, Si, and Ni is added to Al. In this embodiment, the conductive member 61 is a wire made of Au.

[0054] As shown in FIGS. 1 to 3 and 6, the conductive member 61 has a first bonding portion 611 and a second bonding portion 612. The first bonding portion 611 is bonded to the gate electrode 111 of the semiconductor element 1. The second bonding portion 612 is bonded to the second smooth region 311 of the second pad main surface 31a of the second pad portion 31 of the second lead 3. In the step of forming the conductive member 61, the order of forming the first bonding portion 611 and the second bonding portion 612 is not limited in any way. The conductive member 61 is formed by capillary bonding, for example.

[0055] [Conductive member 62] The conductive member 61 is for electrically connecting the source electrode 112 of the semiconductor element 1 and the second lead 4. The specific configuration of the conductive member 62 is not limited in any way, and examples thereof include wires and ribbons made of metal. Examples of the metal constituting the conductive member 61 include metals such as Au and Al, and alloys thereof. Examples of the Al alloy include Al alloys in which any of Fe, Si, and Ni is added to Al. In this embodiment, the conductive member 62 is a wire made of Al or an Al alloy. In this case, the diameter of the conductive member 62 is larger than the diameter of the conductive member 61.

[0056] As shown in FIGS. 1 to 3 and 11, the conductive member 62 has a first bonding portion 621 and a second bonding portion 622. The first bonding portion 621 is bonded to the source electrode 112 of the semiconductor element 1. The second bonding portion 622 is bonded to the second smooth region 411 of the second pad main surface 41a of the second pad portion 41 of the second lead 4. In the step of forming the conductive member 62, the order of forming the first bonding portion 621 and the second bonding portion 622 is not limited in any way. The conductive member 62 is formed by, for example, wedge bonding.

[0057] [Resin part 8] The resin portion 8 covers the semiconductor element 1, the first lead 2, the second lead 3, and a portion of the second lead 4, as well as the conductive member 61 and the conductive member 62. The resin portion 8 is a thermosetting synthetic resin having electrical insulation properties. In this embodiment, the resin portion 8 is a black epoxy resin, and may contain a filler as appropriate. As shown in Figs. 1 to 3, 6, 10, and 11, the resin portion 8 has a resin main surface 81, a resin back surface 82, a resin end surface 83, a resin end surface 84, and a pair of resin side surfaces 85.

[0058] The resin main surface 81 and the resin back surface 82 face opposite to each other in the z direction and are spaced apart. The resin main surface 81 faces the same direction as the element main surface 1a, and the resin back surface 82 faces the same direction as the element back surface 1b. Each of the resin end surface 83, the resin end surface 84, and the pair of resin side surfaces 85 is sandwiched between the resin main surface 81 and the resin back surface 82. The resin end surface 83 faces one side in the y direction. The resin end surface 84 faces the other side in the y direction. The pair of resin side surfaces 85 face both sides in the y direction.

[0059] In this embodiment, the first pad rear surface 21b is exposed from the resin rear surface 82. In addition, the extension portion 22, the terminal portion 32, and the terminal portion 42 protrude from the resin end surface 83. In addition, the protrusion 23 protrudes from the resin end surface 84.

[0060] Next, the operation of the semiconductor device A1 will be described.

[0061] According to this embodiment, as shown in FIGS. 2 to 5 and 7 to 9, the first pad portion 21 has a first rough region 212, and the second pad portion 31 has a second rough region 312. The first rough region 212 and the second rough region 312 are locally engaged with the resin portion 8, so that the first pad portion 21 and the second pad portion 31 can be prevented from peeling off from the resin portion 8. Meanwhile, the semiconductor element 1 is mounted on the first smooth region 211. This makes it possible to avoid a decrease in the bonding strength between the semiconductor element 1 and the first pad portion 21. In addition, the second bonding portion 612 of the conductive member 61 is bonded to the second smooth region 311. According to the inventor's knowledge, it is preferable to bond the second bonding portion 612 to a smoother portion in order to improve the bonding strength. In addition, the second pad portion 41 has the second smooth region 411 and the second rough region 412, so that the same effect can be expected. Therefore, it is possible to improve the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 while ensuring proper operation of the semiconductor device A1. Also, since the second pad portion 41 is provided with the second smooth region 411 and the second roughened region 412, a similar effect can be expected.

[0062] As shown in FIG. 3, the first rough region 212 includes a first portion 2121. This can prevent the first pad portion 21 from peeling off from the side where the second pad portion 31 and the second pad portion 41 are arranged. The first rough region 212 also includes a second portion 2122. This can prevent the first pad portion 21 from peeling off from the side opposite to the side where the second pad portion 31 and the second pad portion 41 are arranged, that is, from the side of the protruding portion 23. The first rough region 212 also includes a third portion 2123. This can prevent the first pad portion 21 from peeling off from the outside in the x direction. Furthermore, a configuration in which the first rough region 212 reaches the edge of the first pad main surface 21a is preferable for preventing peeling off from the first pad portion 21 and the resin portion 8.

[0063] As shown in FIG. 4, the second rough region 312 includes a first portion 3121. This can prevent the second pad portion 31 from peeling off from the side where the first pad portion 21 is arranged. The second rough region 312 also includes a second portion 3122. This can prevent the second pad portion 31 from peeling off from the side opposite to the side where the first pad portion 21 is arranged, that is, from the side of the terminal portion 32. The second rough region 312 also includes a third portion 3123. This can prevent the second pad portion 31 from peeling off from the outside in the x direction. Furthermore, a configuration in which the second rough region 312 reaches the edge of the second pad main surface 31a is preferable for preventing peeling off between the second pad portion 31 and the resin portion 8.

[0064] As shown in FIG. 5, the second rough region 412 includes a first portion 4121. This can prevent the second pad portion 41 from peeling off from the side where the first pad portion 21 is disposed. The second rough region 412 also includes a second portion 4122. This can prevent the second pad portion 41 from peeling off from the side opposite to the side where the first pad portion 21 is disposed, that is, from the side of the terminal portion 42. The second rough region 412 also includes a third portion 4123. This can prevent the second pad portion 41 from peeling off from the outside in the x direction. Furthermore, a configuration in which the second rough region 412 reaches the edge of the second pad main surface 41a is preferable for preventing peeling off between the second pad portion 41 and the resin portion 8.

[0065] As shown in Fig. 3, the first smooth region 211 is not plated, but is a smooth surface with the first metal, for example, Cu, exposed. This is preferable for bonding the semiconductor element 1 with the conductive bonding material 19. As shown in Figs. 3 to 5, the second smooth region 311 and the second smooth region 411 are provided with a second metal, such as Ni, by plating. This can increase the bonding strength of the second bonding portion 612 and the second bonding portion 622.

[0066] 8, the first rough region 212 has a plurality of fine protrusions 212c. This can further enhance the effect of preventing peeling between the first pad portion 21 and the resin portion 8. Furthermore, according to the inventor's findings, when the first rough region 212 is formed using a green laser, a plurality of fine protrusions 212c is likely to be generated.

[0067] As shown in FIG. 9, the second rough region 312 has a plurality of fine protrusions 312c. This can further enhance the effect of preventing peeling between the second pad portion 31 and the resin portion 8. In addition, according to the inventor's findings, when the second rough region 312 is formed using a green laser, a plurality of second rough regions 312c are likely to be generated. In addition, after forming a metal layer 319 made of a second metal such as Ni by plating a first metal such as Cu, a roughening process is performed using a laser such as a green laser. As a result, as shown in FIG. 9, recesses 312a made of the first metal and protrusions 312b made of the second metal are formed, and appropriate roughening can be performed.

[0068] The multiple recesses 312a are regions where Cu, which is the first metal of the second lead 3, is exposed. On the other hand, the multiple protrusions 312b are the second metal, such as Ni, that constitutes the metal layer 319 formed by plating. In this manner, in the case where the recesses 312a penetrate the metal layer 319 and reach the first metal, the inventor's tests confirmed that the peeling of the resin part 8 is significantly suppressed.

[0069] By making the roughness of the first rough region 212 rougher than the second rough region 312 and the second rough region 412, it is possible to more reliably suppress peeling between the first pad portion 21 and the resin portion 8. For example, when the semiconductor element 1 is a power semiconductor chip, a large temperature change may occur in the first pad portion 21. It is preferable to more reliably prevent peeling in such a portion.

[0070] 13 to 21 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as those in the above embodiment.

[0071] <First Modification of First Embodiment> 13 is a cross-sectional view further enlarging a part of second rough region 312 of semiconductor device A1 in the first modification. Like second rough region 312 of semiconductor device A1, second rough region 312 of semiconductor device A1 in this modification is roughened using, for example, a green laser. In this modification, multiple recesses 312a remain within metal layer 319. That is, in recesses 312a, Cu, which is the first metal of second lead 3, is not exposed. For example, metal layer 319 has a thickness of 3 μm to 6 μm, and second rough region 312 has a recess-recess dimension (dimension from the bottom of recess 312a to the top of protrusion 312b) smaller than the thickness of metal layer 319, for example, 1 μm to 4 μm.

[0072] Also in this modification, the second rough region 312 has a plurality of fine protrusions 312c.

[0073] This modification also makes it possible to improve the adhesion between the resin part 8 and the first lead 2, the second lead 3, and the second lead 4 while ensuring proper operation of the semiconductor device A11. As can be seen from this modification, the second rough region 312 is not limited to the case where the first metal of the second lead 3 is exposed in the recess 312a, and there may be cases where the first metal is not exposed. Even with this configuration, the presence of the recess 312a and the protrusion 312b, as well as the fine protrusion 312c, can promote adhesion with the resin part 8.

[0074] <Second Modification of First Embodiment> 14 shows a second modified example of the semiconductor device A1. The semiconductor device A12 of this example further includes a semiconductor element 1A and a conductive member 63.

[0075] The semiconductor element 1A is, for example, a diode. The first pad main surface 21a of the first pad portion 21 has two first smooth regions 211. The semiconductor element 1 is mounted on one of the first smooth regions 211, and the semiconductor element 1A is mounted on the other first smooth region 211.

[0076] The first rough region 212 of this modification has a first portion 2121, a second portion 2122, a pair of third portions 2123, and a fourth portion 2124. The fourth portion 2124 has a shape extending in the y direction and is connected to the first portion 2121 and the second portion 2122. The fourth portion 2124 separates the two first smooth regions 211 from each other.

[0077] The conductive member 63 has a first bonding portion 631 and a second bonding portion 632. The material of the conductive member 63 is not particularly limited, and may be, for example, Au, Al, or an alloy thereof. The first bonding portion 631 is bonded to the main surface electrode 11A of the semiconductor element 1A. The second bonding portion 632 is bonded to the second smooth region 411 of the second pad main surface 41a of the second lead 4. That is, in this example, the second bonding portion 622 and the second bonding portion 632 are bonded to one second roughened region 412.

[0078] Even with this modification, it is possible to improve the adhesion between the resin part 8 and the first lead 2, the second lead 3, and the second lead 4 while ensuring proper operation of the semiconductor device A12. Furthermore, as can be understood from this modification, the semiconductor device of the present disclosure may be configured to include two or more semiconductor elements. Furthermore, the second roughened region of the present disclosure may be configured to have two or more conductive members joined thereto.

[0079] <Third Modification of First Embodiment> 15 shows a third modified example of the semiconductor device A1. The semiconductor device A13 of this modified example differs from the above-mentioned examples in the configuration of the semiconductor element 1. The semiconductor device A1 of this modified example is, for example, a diode.

[0080] In the present modified example, the first bonding portion 611 and the first bonding portion 621 of the conductive member 61 and the conductive member 62 are both bonded to the main surface electrode 11. The conductive member 61 and the conductive member 62 are both made of, for example, Al or an Al alloy. The second bonding portion 612 is bonded to the second smooth region 311, and the second bonding portion 622 is bonded to the second smooth region 411. In this configuration, the second lead 3 and the second lead 4 are conductive members having the same electrical potential.

[0081] Even with this modification, it is possible to improve the adhesion between the resin part 8 and the first lead 2, the second lead 3, and the second lead 4 while ensuring proper operation of the semiconductor device A13. Furthermore, as can be understood from this modification, the type of the semiconductor element of the present disclosure is not limited in any way. Furthermore, the conductive member and the second lead of the present disclosure are appropriately set according to the configuration of the semiconductor element, etc.

[0082] <Second embodiment> 16 to 20 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a conductive member 61, a plurality of conductive members 62, and a resin part 8.

[0083] Fig. 16 is a perspective view showing the semiconductor device A2. Fig. 17 is a plan view showing the semiconductor device A2. Fig. 18 is a cross-sectional view taken along line XVII-XVII in Fig. 17. Fig. 19 is a cross-sectional view taken along line XVIII-XVIII in Fig. 17. Fig. 20 is a cross-sectional view taken along line XIX-XIX in Fig. 17.

[0084] The semiconductor element 1 has a configuration similar to that of the semiconductor element 1 of the semiconductor device A1, for example, and has a plurality of principal surface electrodes 11 including a gate electrode 111 and a source electrode 112, and a drain electrode 12.

[0085] The first lead 2 has a first pad portion 21. The configuration of the first pad portion 21 is similar to that of the first pad portion 21 of the semiconductor device A1. In addition, the first pad portion 21 of this embodiment is formed with a locking portion 252, a locking portion 253, and a locking portion 254. The locking portion 252, the locking portion 253, and the locking portion 254 are intended to improve the holding force of the first pad portion 21 by the resin portion 8, similar to the locking portion 251. The locking portion 252 and the locking portion 253 are formed side by side in the y direction. The locking portion 254 is provided so as to protrude from the first pad portion 21 in the y direction toward the side where the second lead 3 and the second lead 4 are located.

[0086] The shape of the second pad portion 31 of the second lead 3 is different from the second pad portion 31 in the semiconductor device A1. Also, the second smooth region 311 in this embodiment has an elongated shape that extends in a direction inclined with respect to the y direction.

[0087] The first bonding portion 611 of the conductive member 61 is bonded to the gate electrode 111 of the semiconductor element 1. The second bonding portion 612 is bonded to the second smooth region 311. In this embodiment, the second bonding portion 612 is bonded to the second smooth region 311 such that the longitudinal direction of the second bonding portion 612 and the longitudinal direction of the second smooth region 311 approximately coincide with each other. The conductive member 61 is, for example, a wire made of Au.

[0088] The second lead 4 of the present embodiment has a second pad portion 41 , a plurality of terminal portions 42 , and an extending portion 43 .

[0089] The second pad portion 41 of this embodiment has a shape that extends long in the x direction when viewed along the z direction. The second pad main surface 41a of this embodiment has a plurality of second smooth regions 411 and a second rough region 412. Each of the plurality of second smooth regions 411 has an elongated rectangular shape with the y direction as the longitudinal direction, and is spaced apart from one another in the x direction. Parts of the second rough region 412 are disposed between adjacent second smooth regions 411.

[0090] The multiple terminal portions 42 extend in the y direction from the second pad portion 41 and are spaced apart from one another in the x direction. The extension portion 43 extends in the x direction from the second pad portion 41 and is disposed between two terminal portions 42 in the x direction.

[0091] The first bonding portions 621 of each of the multiple conductive members 62 are bonded to the source electrode 112 of the semiconductor element 1. The second bonding portions 622 of the multiple conductive members 62 are individually bonded to the multiple second smooth regions 411. The longitudinal direction of the second bonding portion 622 and the longitudinal direction of the second smooth region 411 are substantially aligned with each other and are aligned substantially along the y direction.

[0092] The resin part 8 of the present embodiment has two recesses 851. The recesses 851 are portions recessed from the resin main surface 81 and the pair of resin side surfaces 85.

[0093] This embodiment also makes it possible to improve the adhesion between the resin part 8 and the first lead 2, the second lead 3, and the second lead 4 while ensuring proper operation of the semiconductor device A2. Furthermore, a configuration may be adopted in which a plurality of conductive members 62 are bonded to one source electrode 112 (principal surface electrode 11). Further, a configuration may be adopted in which the second bonding parts 622 of the plurality of conductive members 62 are individually bonded to a plurality of second smooth regions 411 provided on one second pad part 41.

[0094] <First Modification of Second Embodiment> 21 shows a first modified example of the semiconductor device A2. The semiconductor device A21 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a second lead 5, a conductive member 61, a plurality of conductive members 62, a conductive member 63, and a resin part 8.

[0095] In this embodiment, the multiple principal surface electrodes 11 of the semiconductor element 1 include a gate electrode 111 , a source electrode 112 and a source sense electrode 113 .

[0096] The source sense electrode 113 has, for example, the same shape and size as the gate electrode 111, and is arranged side by side with the gate electrode 111 in the x direction.

[0097] The second lead 4 is disposed spaced apart from the second lead 3 in the x-direction, and has a second pad portion 41 , a plurality of terminal portions 42 , and an extending portion 43 .

[0098] The second lead 5 has a similar configuration to the second lead 3 (and the second lead 4). In this embodiment, the second lead 5 is disposed between the second lead 3 and the second lead 4 in the x-direction. The second lead 5 has a second pad portion 51 and a terminal portion 52. The configurations of the second pad portion 51 and the terminal portion 52 are similar to those of the second pad portion 41 and the terminal portion 42. In addition, the second pad portion 51 is provided with a second smooth region 511 and a second rough region 512. The configurations of the second smooth region 511 and the second rough region 512 are similar to those of, for example, the second smooth region 411 and the second rough region 412.

[0099] The conductive member 61 has a first bonding portion 611 bonded to the gate electrode 111, and a second bonding portion 612 bonded to the second smooth region 311. The plurality of conductive members 62 has a first bonding portion 621 bonded to the source electrode 112, and a second bonding portion 622 bonded individually to the second smooth region 411 of the gate. The conductive member 63 has a first bonding portion 631 and a second bonding portion 632. The configuration of the conductive member 63 is similar to that of the conductive member 61, for example. The first bonding portion 611 is bonded to the source sense electrode 113, and the second bonding portion 632 is bonded to the second smooth region 511.

[0100] This modification also makes it possible to improve the adhesion between the resin part 8 and the first lead 2, the second lead 3, the second lead 4, and the second lead 5 while ensuring proper operation of the semiconductor device A21. As can be understood from this embodiment, the configuration of the multiple main surface electrodes 11 is not limited in any way. Depending on the configuration of the multiple main surface electrodes 11, a configuration may be provided in addition to the second lead 3 and the second lead 4, and further including another second lead such as the second lead 5.

[0101] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.

[0102] [Appendix 1] a semiconductor element having a main surface and a back surface facing in opposite directions in a first direction; a first lead having a first pad portion on which the semiconductor element is mounted; a second lead having a second pad portion arranged alongside the first pad portion in a second direction perpendicular to the first direction; a conductive member having a first bonding portion bonded to the semiconductor element and a second bonding portion bonded to the second pad portion; a resin portion covering the semiconductor element, the conductive member, the first pad portion, and the second pad portion, the first pad portion has a first pad main surface including a first smooth region to which the back surface of the element is bonded and a first roughened region that is distant from the semiconductor element when viewed along the first direction and is rougher than the first smooth region; A semiconductor device, wherein the second pad portion has a second pad main surface including a second smooth region to which the second bonding portion is bonded and a second roughened region that is separated from the second bonding portion when viewed along the first direction and is rougher than the second smooth region. [Appendix 2] 2. The semiconductor device of claim 1, wherein the first rough region includes a first portion located on the second pad portion side with respect to the first smooth region. [Appendix 3] 3. The semiconductor device according to claim 1, wherein the first rough region includes a second portion located on an opposite side of the first smooth region from the second pad portion. [Appendix 4] 4. The semiconductor device of claim 1, wherein the first rough region includes a third portion adjacent to the first smooth region in a third direction perpendicular to the first direction and the second direction. [Appendix 5] 5. The semiconductor device according to claim 1, wherein the second rough region includes a first portion located on the first pad portion side with respect to the second smooth region. [Appendix 6] 6. The semiconductor device according to claim 1, wherein the second rough region includes a second portion located on the opposite side of the second smooth region from the first pad portion. [Appendix 7] 7. The semiconductor device of claim 1, wherein the second rough region includes a third portion adjacent to the second smooth region in a third direction perpendicular to the first direction and the second direction. [Appendix 8] the first pad portion includes a first metal; 8. The semiconductor device according to claim 1, wherein the first pad main surface is made of the first metal. [Appendix 9] 9. The semiconductor device according to claim 8, wherein the second pad portion includes a second metal and a third metal provided on a surface of the second metal. [Appendix 10] 10. The semiconductor device according to claim 9, wherein the second smooth region is made of the third metal. [Appendix 11] 11. The semiconductor device of claim 10, wherein the second rough region includes a plurality of recesses made of the second metal and a plurality of protrusions made of the third metal, each protruding portion being located between adjacent recesses. [Appendix 12] 12. The semiconductor device according to claim 1, wherein the first rough region is rougher than the second rough region. [Appendix 13] 13. The semiconductor device according to any one of claims 1 to 12, wherein the second pad main surface is located on a side toward which the first pad main surface faces in the first direction relative to the first pad main surface. [Appendix 14] 14. The semiconductor device according to claim 13, wherein the second pad main surface is located on a side toward which the element main surface faces relative to the element main surface in the first direction. [Appendix 15] 15. The semiconductor device according to claim 1, wherein the first lead has a first pad back surface facing the opposite side to the first pad main surface in the first direction and exposed from the resin portion. [Appendix 16] 16. The semiconductor device according to claim 1, wherein the second lead has a terminal portion protruding from the resin portion in the second direction. [Appendix 17] the semiconductor element has a gate electrode and a source electrode disposed on a main surface of the element, and a drain electrode disposed on a rear surface of the element; the first bonding portion of the conductive member is bonded to at least one of the gate electrode and the source electrode, 17. The semiconductor device according to claim 1, wherein the drain electrode is conductively joined to the first smooth region.

Claims

1. a semiconductor element having a main surface and a back surface facing in opposite directions in a first direction; a first lead having a first pad portion on which the semiconductor element is mounted; a second lead having a second pad portion arranged alongside the first pad portion in a second direction perpendicular to the first direction; a conductive member having a first bonding portion bonded to the semiconductor element and a second bonding portion bonded to the second pad portion; a resin portion covering the semiconductor element, the conductive member, the first pad portion, and the second pad portion, the first pad portion has a first pad main surface including a first smooth region to which the back surface of the element is bonded and a first roughened region that is apart from the semiconductor element when viewed along the first direction and is rougher than the first smooth region; the second pad portion has a second pad main surface including a second smooth region to which the second bonding portion is bonded and a second roughened region that is spaced from the second bonding portion when viewed along the first direction and is rougher than the second smooth region; the first pad portion includes a first metal; the first pad main surface is made of the first metal; the second pad portion includes a second metal and a third metal provided on a surface of the second metal, the second smooth region is made of the third metal, the second rough region includes a plurality of recesses made of the second metal and a plurality of protrusions made of the third metal, each protruding portion being located between adjacent recesses; A semiconductor device, wherein each of the plurality of recesses is exposed from the third metal.

2. The semiconductor device according to claim 1 , wherein the first rough region includes a first portion located on a side of the first smooth region facing the second pad portion.

3. 3 . The semiconductor device according to claim 1 , wherein the first rough region includes a second portion located on an opposite side of the first smooth region from the second pad portion.

4. 4 . The semiconductor device according to claim 1 , wherein the first rough region includes a third portion adjacent to the first smooth region in a third direction perpendicular to the first direction and the second direction.

5. 5 . The semiconductor device according to claim 1 , wherein the second rough region includes a first portion located on a side of the second smooth region facing the first pad portion.

6. 6. The semiconductor device according to claim 1, wherein said second rough region includes a second portion located on an opposite side of said second smooth region from said first pad portion.

7. 7. The semiconductor device according to claim 1, wherein the second rough region includes a third portion adjacent to the second smooth region in a third direction perpendicular to the first direction and the second direction.

8. The semiconductor device according to claim 1 , wherein the first rough region is rougher than the second rough region.

9. 9. The semiconductor device according to claim 1, wherein said second pad main surface is located on a side toward which said first pad main surface faces in said first direction relative to said first pad main surface.

10. 10. The semiconductor device according to claim 9, wherein the second pad main surface is located on a side toward which the element main surface faces relative to the element main surface in the first direction.

11. 11. The semiconductor device according to claim 1, wherein said first lead has a first pad back surface facing a side opposite to said first pad main surface in said first direction and exposed from said resin portion.

12. 12. The semiconductor device according to claim 1, wherein the second lead has a terminal portion protruding from the resin portion in the second direction.

13. the semiconductor element has a gate electrode and a source electrode disposed on a main surface of the element, and a drain electrode disposed on a rear surface of the element; the first bonding portion of the conductive member is bonded to at least one of the gate electrode and the source electrode, The semiconductor device according to claim 1 , wherein the drain electrode is conductively joined to the first smooth region.

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