Semiconductor Device

Abstract

This semiconductor device (1) comprises a mounting substrate (10), an adjoining cured silicone resin thin film (20) over the mounting substrate (10), and an adjoining first cured silicone resin (30) on the cured silicone resin thin film (20). In the semiconductor device (1), the oxygen content per unit area of the cured silicone resin thin film (20) over the entire range of the thickness direction is greater than the oxygen content per unit area of the first cured silicone resin.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] Conventionally, a semiconductor device having an LED (Light Emitting Diode) package structure in which a light-transmitting member is bonded to a light-emitting element by a light-guiding member has been used as a semiconductor device. For example, Patent Document 1 discloses a light-emitting device including a light-emitting element mounted on a substrate, a light-transmitting member above the light-emitting element, a light-guiding member that joins the light-emitting element and the light-transmitting member, and a covering member that covers the surfaces of the substrate, the light-emitting element, the light-transmitting member, and the light-guiding member. The light-guiding member and the covering member are made of a resin member such as a silicone resin cured product. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-219324 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a semiconductor device, it is required to suppress peeling between each component of the semiconductor device and a resin component such as a cured silicone resin that covers each component. Therefore, an object of the present disclosure is to provide a semiconductor device that can suppress peeling of a cured silicone resin that covers the components of the semiconductor device. [Means for solving the problem]

[0005] In order to achieve the above object, one aspect of a semiconductor device according to the present disclosure includes a base, a thin film of cured silicone resin in contact with the base, and a first cured silicone resin in contact with the thin film of cured silicone resin, wherein the oxygen content per unit volume of the thin film of cured silicone resin is greater than the oxygen content per unit volume of the first cured silicone resin throughout the entire thickness direction. Effect of the Invention

[0006] According to the present disclosure, peeling of a cured silicone resin coating a component of a semiconductor device can be suppressed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a top view showing a configuration of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Diagram 3] FIG. 3 is a flowchart for explaining the method of manufacturing the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a top view for illustrating a step of preparing a mounting substrate in a manufacturing process of the semiconductor device according to the first embodiment. [Diagram 5] FIG. 5 is a top view for illustrating a step of mounting a light emitting element in a manufacturing process of the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a top view for illustrating a step of applying an adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view illustrating a step of pressing a light-transmitting member from above an adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 8A] FIG. 8A is another cross-sectional view illustrating the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 8B]FIG. 8B is another cross-sectional view illustrating the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 8C] FIG. 8C is another cross-sectional view illustrating the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 9A] FIG. 9A is a cross-sectional view illustrating a step of curing an adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 9B] FIG. 9B is a top view for illustrating a step of curing an adhesive in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 10] FIG. 10 is a diagram showing an example of the relationship between the distance from the silicone resin and the thickness of the formed scattered coating. [Figure 11] FIG. 11 is a top view for illustrating a step of forming a dam material in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a top view illustrating a step of filling and hardening a material for forming a reflective member in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is a top view for illustrating a step of dividing the semiconductor device into individual pieces in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 16] FIG. 16 is a diagram showing the detected amount of fragment ions of the cured silicone resin thin film according to the first embodiment. [Figure 17] FIG. 17 is a diagram showing the relationship between the integrated amount of UV light and the ratio of the detected amount of SiO2-based fragment ions. [Figure 18] FIG. 18 is a cross-sectional view showing a configuration of a semiconductor device according to the second embodiment. [Figure 19]FIG. 19 is a cross-sectional view illustrating a step of irradiating UV light in the manufacturing process of the semiconductor device according to the second embodiment. [Figure 20] FIG. 20 is a cross-sectional view showing a configuration of a semiconductor device according to the third embodiment. [Figure 21] FIG. 21 is a flowchart for explaining a method of manufacturing a semiconductor device according to the third embodiment. [Figure 22] FIG. 22 is a cross-sectional view illustrating a step of irradiating a first UV light in the manufacturing process of the semiconductor device according to the third embodiment. [Figure 23] FIG. 23 is a cross-sectional view illustrating a step of forming a dam material in the manufacturing process according to the third embodiment. [Figure 24] FIG. 24 is a cross-sectional view illustrating a step of hardening the dam material in the manufacturing process of the semiconductor device according to the third embodiment. [Diagram 25] FIG. 25 is a cross-sectional view illustrating a step of irradiating with UV light for the second time in the manufacturing process of the semiconductor device according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] (How one aspect of the present disclosure was achieved) Before describing the embodiments of the present disclosure, the background to the invention will be described.

[0009] Generally, LED packages are manufactured using silicone resin as disclosed in Patent Document 1. In this specification, unless otherwise specified, the term "silicone resin" refers to liquid silicone resin before curing.

[0010] The present inventors have found that, in this manufacturing method, when the silicone resin is thermally cured, a part of the silicone resin evaporates and scatters before it is cured, forming a scattering coating of the cured silicone resin on nearby members, and further, that the adhesiveness between the members such as a mounting board on which the thin film of the cured silicone resin is formed and the cured silicone resin coating each member is reduced.

[0011] Therefore, an object of the present disclosure is to provide a semiconductor device that can suppress peeling of the cured silicone resin covering the components of the semiconductor device, even when a thin film of cured silicone resin is generated on the components of the semiconductor device.

[0012] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the embodiments described below are all specific examples of the present disclosure. Therefore, the numerical values, shapes, materials, components, arrangement and connection of the components, steps (processes), and order of steps shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0013] In addition, each figure is a schematic diagram and is not necessarily precisely illustrated. Therefore, the scales and the like are not necessarily the same in each figure. In each figure, the same reference numerals are given to substantially the same configurations, and duplicated explanations are omitted or simplified.

[0014] In the following embodiments, the terms "upper" and "lower" do not refer to the upper direction (vertically upper) and lower direction (vertically lower) in absolute spatial recognition. The terms "upper" and "lower" are also applicable to cases where two components are arranged closely together and in contact with each other, as well as cases where two components are arranged closely together and in contact with each other, as long as the two components are spaced apart from each other and another component is present between the two components.

[0015] (Embodiment 1) A semiconductor device according to a first embodiment will be described.

[0016] [Overall configuration] First, the overall configuration of a semiconductor device 1 according to a first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a top view showing the configuration of the semiconductor device 1 according to the first embodiment. Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1.

[0017] 1 and 2, the semiconductor device 1 includes a mounting substrate 10 having a conductive pattern 11 formed thereon, a silicone resin cured thin film 20, a first silicone resin cured product 30, a light-emitting element 40, a light-transmitting member 50, a second silicone resin cured product 60, and a third silicone resin cured product 70. In the present embodiment, the semiconductor device 1 is a light-emitting device in which the light-emitting element 40 is mounted on the mounting substrate 10.

[0018] The mounting substrate 10 is, for example, a ceramic substrate made of a sintered body of AlN. In the present embodiment, the mounting substrate 10 is an example of a base. The mounting substrate 10 may be a metal substrate or a resin substrate. The conductive pattern 11 is a conductive layer formed on the mounting substrate 10 and electrically connected to the light emitting element 40, and is formed of, for example, copper, silver, gold, aluminum, or the like.

[0019] The silicone resin cured thin film 20 is provided on the mounting substrate 10 and is in contact with the mounting substrate 10. The silicone resin cured thin film 20 is also in contact with the first silicone resin cured material 30, and is located between the mounting substrate 10 and the first silicone resin cured material 30. In addition, a part or all of the region of the silicone resin cured thin film 20 in a plan view with respect to the mounting substrate 10 is also in contact with the conductive pattern 11 and the third silicone resin cured material 70. The silicone resin cured thin film 20 is disposed around and in the vicinity of the side surface of the light emitting element 40 in a plan view with respect to the mounting substrate 10. The silicone resin cured thin film 20 is disposed, for example, in an area within 3 mm from the side surface of the light emitting element 40 at least in a plan view with respect to the mounting substrate 10. The silicone resin cured thin film 20 is adjacent to the light emitting element 40, but the silicone resin cured thin film 20 and the light emitting element 40 may be separated from each other in a plan view with respect to the mounting substrate 10.

[0020] The silicone resin cured thin film 20 is, for example, a thin film formed by altering a scattering coating formed by evaporation and scattering of a part of the silicone resin for forming the silicone resin cured product. The thickness of the silicone resin cured thin film 20 is, for example, 0.1 μm or less. The silicone resin cured thin film 20 contains, for example, a silicone having a hydrocarbon group on a side chain, such as polydimethyl silicone or polydiphenyl silicone, which is altered by oxidation as the main component silicone, and a coupling agent. The coupling agent is, for example, a silane coupling agent having, in one molecule, a functional group such as a vinyl group or an epoxy group for bonding with a polymer such as silicone in the resin, and a functional group such as an OH group for bonding with a substrate having an OH group, such as a mounting substrate.

[0021] The oxygen content per unit volume of the cured silicone resin thin film 20 in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin 30. In other words, the oxygen content per unit volume of the cured silicone resin thin film 20 is greater than the oxygen content per unit volume of the first cured silicone resin 30 at any position in the thickness direction. For example, the oxygen content per unit volume of the cured silicone resin thin film 20 in the entire thickness direction at the same position in a plan view of the cured silicone resin thin film 20 is greater than the oxygen content per unit volume of the first cured silicone resin 30. The oxygen content in the present disclosure is calculated, for example, from the amount of SiO2-based fragment ions measured by a time-of-flight secondary-ion-mass-spectroscopy (TOF-SIMS) method. A specific calculation method will be described later. This makes it easier for OH groups to exist on the surface of the cured silicone resin thin film 20.

[0022] The first silicone resin cured product 30 is a resin member for covering each member such as the light emitting element 40. The first silicone resin cured product 30 is in contact with the upper surface of the silicone resin cured product thin film 20. The first silicone resin cured product 30 is also in contact with the side surfaces of the light-transmitting member 50, the second silicone resin cured product 60, and the third silicone resin cured product 70. The first silicone resin cured product 30 is disposed in an area surrounded by the third silicone resin cured product 70, the mounting substrate 10, and the light emitting element 40. The first silicone resin cured product 30 is located around the light emitting element 40, the light-transmitting member 50, and the second silicone resin cured product 60 in a plan view of the mounting substrate 10, and covers them. The first silicone resin cured product 30 also covers the upper side of the mounting substrate 10. The first silicone resin cured product 30 may be in contact with the mounting substrate 10 and the light emitting element 40.

[0023] The first silicone resin cured product 30 contains, for example, a silicone having a hydrocarbon group on a side chain, such as polydimethyl silicone or polydiphenyl silicone, as a main component silicone, and a coupling agent. A particulate light-reflecting material may be added to the first silicone resin cured product 30. Examples of the light-reflecting material include titanium oxide (TiO2) and zinc oxide (ZnO). As a result, the first silicone resin cured product 30 has electrical insulation and light reflectivity. Since the first silicone resin cured product 30 has light reflectivity, the light emitted from the lower side and the side of the light-emitting element 40 is reflected by the light-reflecting material and emitted from the semiconductor device 1 toward the upper side.

[0024] The light emitting element 40 is mounted on the upper side of the mounting substrate 10. The light emitting element 40 is, for example, a solid-state light emitting element such as an LED. As the LED, for example, a blue LED in which a nitride compound semiconductor is formed on a GaN substrate is used. In the example shown in Fig. 1 and Fig. 2, two light emitting elements 40 are mounted on the upper side of the mounting substrate 10 in an electrically serial connection, but the number of light emitting elements 40 mounted on the mounting substrate 10 is not particularly limited and may be one, or may be three or more.

[0025] The light-transmitting member 50 is a member that transmits the light emitted from the light-emitting element 40. The light-transmitting member 50 is made of, for example, resin or glass. The light-transmitting member 50 may contain a phosphor that converts the wavelength of at least a part of the light emitted from the light-emitting element 40. The phosphor is dispersed in the light-transmitting member 50.

[0026] The second silicone resin cured product 60 is disposed between the light-emitting element 40 and the light-transmitting member 50, and covers the side surface of the light-emitting element 40. The second silicone resin cured product 60 may cover the side surface of the light-transmitting member 50. The second silicone resin cured product 60 bonds the light-emitting element 40 and the light-transmitting member 50. The second silicone resin cured product 60 contains, for example, a silicone having a hydrocarbon group on its side chain, such as polydimethyl silicone or polydiphenyl silicone, as the main silicone component, and a coupling agent.

[0027] The third silicone resin cured material 70 is disposed on the upper side of the mounting substrate 10, and contacts the outer side of the first silicone resin cured material 30 in a plan view relative to the mounting substrate 10. The third silicone resin cured material 70 contacts the mounting substrate 10. The third silicone resin cured material 70 is located near the silicone resin cured material thin film 20 in a plan view relative to the mounting substrate 10. The third silicone resin cured material 70 functions as a frame that blocks the flow of the silicone resin when forming the first silicone resin cured material 30. The third silicone resin cured material 70 is, for example, a cured material of a UV-curable silicone resin. The third silicone resin cured material 70 may be a cured material of a thermosetting silicone resin. The third silicone resin cured material 70 contains, for example, a silicone having a hydrocarbon group on a side chain such as polydimethyl silicone or polydiphenyl silicone as a main silicone component, and a coupling agent.

[0028] The third silicone resin cured product 70 may be a reflective member having light reflectivity to UV light. For example, the reflective member is formed by depositing a metal or the like that reflects UV light on the third silicone resin cured product 70. The oxygen content of the silicone resin cured product thin film 20 can be increased by irradiation with UV light, as will be described in detail later. Therefore, in this case, the oxygen content per unit volume in the entire thickness direction of the part of the silicone resin cured product thin film 20 near the reflective member is higher than the oxygen content per unit volume in the entire thickness direction of the part farther from the reflective member than the part near the reflective member. Therefore, the adhesion between the silicone resin cured product thin film 20 and the first silicone resin cured product 30 is further increased in the part near the reflective member.

[0029] Instead of the third silicone resin cured product 70, a frame may be formed from another resin material, ceramic, or the like.

[0030] Generally, silicone resin itself does not have an adhesive function with a substrate such as a mounting substrate 10, but by mixing a small amount of a coupling agent into the silicone resin and then coating and curing the silicone resin, an adhesive function can be imparted, and the adhesive strength between the substrate and the silicone resin can be increased. Specifically, when the silicone resin is coated and cured, if OH groups are present on the surface of the substrate to which the silicone resin is applied, such as metal, ceramics, or plastic, the OH groups on the substrate surface and the OH groups of the coupling agent contained in the silicone resin approach each other. The OH groups on the substrate surface and the OH groups of the coupling agent that are close to each other undergo a dehydration reaction due to heating or the like, and a covalent bond is formed between the substrate and the silicone resin. As a result, the adhesive strength between the substrate and the silicone resin cured product is increased. In addition, during curing, the coupling agent and the substrate are bonded, so that the coupling agent is localized at the interface between the substrate and the silicone resin. Therefore, after curing, there are almost no OH groups on the surface of the silicone resin cured product that is not the adhesive side with the substrate.

[0031] [Action and Effects] Next, the operation and effects of the semiconductor device 1 according to the present embodiment will be described.

[0032] As described above, the semiconductor device 1 has a mounting substrate 10, a silicone resin cured thin film 20 in contact with the mounting substrate 10, and a first silicone resin cured material 30 in contact with the silicone resin cured thin film 20. In the semiconductor device 1, the oxygen content per unit volume of the silicone resin cured thin film 20 is greater than the oxygen content per unit volume of the first silicone resin cured material 30 over the entire thickness direction.

[0033] A silicone resin cured product formed by a normal method (for example, a silicone resin splash coating formed on a substrate for some reason) has almost no OH groups on its surface as described above. On the other hand, the silicone resin cured product thin film 20 in the present embodiment is a silicone resin cured product thin film in which only the hydrocarbon groups in the silicone side chains are oxidized and the oxygen content is increased without destroying the macroscopic structure of the silicone, for example, by irradiating the splash coating with ultraviolet light (UV light). In other words, OH groups are likely to be present on the surface of the silicone resin cured product thin film 20, which is not the side that is bonded to the mounting substrate 10. In this way, when the first silicone resin cured product 30 is applied to the silicone resin cured product thin film 20 having a higher oxygen content per unit volume than the oxygen content per unit volume of the first silicone resin cured product 30, a bond is likely to be formed via a coupling agent or the like contained in the silicone resin before curing of the first silicone resin cured product 30. Therefore, the adhesion between the silicone resin cured product thin film 20 and the first silicone resin cured product 30 is improved. Therefore, in the semiconductor device 1, peeling of the first silicone resin cured product 30 that covers components such as the mounting substrate 10 of the semiconductor device 1 can be suppressed.

[0034] The semiconductor device 1 also has a light-emitting element 40 mounted on the upper side of the mounting substrate 10, and a light-transmitting member 50 arranged on the upper side of the light-emitting element 40. The semiconductor device 1 also has a second silicone resin cured product 60 arranged between the light-emitting element 40 and the light-transmitting member 50, and covering at least one of the side surfaces of the light-emitting element 40 and the side surfaces of the light-transmitting member 50. The silicone resin cured product thin film 20 is arranged around and in the vicinity of the side surface of the light-emitting element 40 in a plan view with respect to the mounting substrate 10.

[0035] As described above, the adhesive strength between the silicone resin cured thin film 20 and the first silicone resin cured product 30 is improved. This prevents the first silicone resin cured product 30 from peeling off even around and in the vicinity of the side surface of the light emitting element 40, which is prone to peeling off due to heat generation from the light emitting element 40, in a plan view of the mounting substrate 10.

[0036] [Manufacturing method] Next, a manufacturing method of the semiconductor device 1 according to the first embodiment will be described with reference to FIGS.

[0037] FIG. 3 is a flowchart for explaining a method of manufacturing the semiconductor device 1 according to the first embodiment.

[0038] First, a mounting substrate 10 (submount) on which a conductive pattern 11 is formed is prepared (S11 in FIG. 3). For example, a fired AlN substrate is used as the mounting substrate 10. FIG. 4 is a top view for explaining a step of preparing the mounting substrate 10 in the manufacturing process of the semiconductor device 1.

[0039] As shown in FIG. 4, a conductive pattern 11 is formed in a 3×3 matrix on the mounting substrate 10. Although not shown in the drawing, the conductive pattern 11 is electrically connected to a connection terminal on the back surface, and can supply power to the light-emitting element 40 connected to the conductive pattern 11. The mounting substrate 10 is later divided into the shapes shown by the dotted lines in FIG. 4 by dicing. In the example of FIG. 4, nine semiconductor devices 1 are manufactured from one mounting substrate 10. Note that the mounting substrate 10 may not be divided, and one semiconductor device 1 may be manufactured from one mounting substrate 10, or one mounting substrate 10 may be divided into a number other than nine.

[0040] Furthermore, when multiple light emitting elements 40 are used for one semiconductor device 1, a conductive pattern may be appropriately formed so that they can be connected in series or in parallel by flip chip connection. For example, the conductive pattern 11 shown in Fig. 4 is a pattern for connecting two light emitting elements 40 in series, but the shape of the metal pads may be designed so that they can be bump connected to the p-type and n-type electrodes of the light emitting elements 40. Note that the actual conductive pattern 11 on the mounting substrate 10 has a complex shape corresponding to the electrode pattern of the light emitting elements 40, but is shown in a simplified form in Fig. 4.

[0041] Next, the light emitting element 40 is mounted on the mounting substrate 10 (S12 in FIG. 3). FIG 5 is a top view for explaining the step of mounting the light emitting element 40 in the manufacturing process of the semiconductor device 1.

[0042] The light emitting element 40 to be mounted is a blue LED chip in which a nitride compound semiconductor is formed on a GaN substrate. For example, a plurality of metal bumps are placed on a metal pad, and the light emitting element 40 is placed on the growth substrate side up using a flip-chip method, followed by ultrasonic welding. For example, the light emitting element 40 is 100 μm high and 1 mm wide, and is placed on metal bumps with a height of 20 μm. As shown in FIG. 5, two light emitting elements 40 are mounted on the mounting substrate 10 after dicing.

[0043] The growth substrate may have a microtexture structure by roughening the back surface (upper surface in terms of the mounted light emitting element 40). To roughen the back surface of the growth substrate, minute irregularities are formed by etching, blasting, or processing with a laser or a dicing blade. When the growth substrate is made of sapphire or the like and has a lower refractive index than GaN, the back surface of the growth substrate may be flat.

[0044] Next, the light-transmitting member 50 is adhered onto the light-emitting element 40 .

[0045] First, the adhesive 60a is applied onto the light-emitting element 40 (S13 in FIG. 3). The adhesive 60a is cured to form a second silicone resin cured product 60, which will be described in detail later. FIG. 6 is a top view for explaining a step of applying the adhesive 60a in the manufacturing process of the semiconductor device 1. FIG. 6 shows one of the ranges (ranges of one semiconductor device 1 after dicing) surrounded by dotted lines in FIG. 4 and FIG. 5. As shown in FIG. 6, a predetermined amount of translucent resin is applied as the adhesive 60a to the center of the back surface (upper surface) of the growth substrate of the light-emitting element 40 by a dispenser. The adhesive 60a is, for example, a liquid silicone resin. The silicone resin is, for example, a thermosetting silicone resin, or may be a UV-curing silicone resin. The silicone resin is, for example, a silicone resin whose main component is polydimethyl silicone, but may be polydiphenyl silicone, modified polysilicone, or the like. The silicone resin may also contain a coupling agent to improve adhesion between the light-emitting element 40 and the translucent member 50. Although the adhesive 60a is applied by a dispense method, other application methods such as a stamp method may be used.

[0046] Next, the light-transmitting member 50 is pressed from above the adhesive 60a (S14 in FIG. 3). FIGS. 7, 8A, 8B, and 8C are cross-sectional views for explaining a process of pressing the light-transmitting member 50 from above the adhesive 60a in the manufacturing process of the semiconductor device 1. FIGS. 7, 8A, 8B, and 8C show one of the areas surrounded by dotted lines in FIGS. 4 and 5 (the area of ​​one semiconductor device 1 after dicing). FIGS. 8B and 8C show light-transmitting members 50a and 50b, which are different in size from the light-transmitting member 50 in FIG. 8A, as another example of the light-transmitting member 50.

[0047] As shown in FIG. 7, the light-transmitting member 50 is placed on the adhesive 60a, and the light-transmitting member 50 is pressed from above, so that the adhesive 60a is spread and covers the entire upper surface of the light-emitting element 40. The light-transmitting member 50 is placed so that the center of the light-emitting element 40 coincides with the center of the light-emitting element 40 in a plan view relative to the mounting substrate 10. At this time, the gap between the light-emitting element 40 and the light-transmitting member 50 becomes small, so that the adhesive 60a protrudes from the bonding surface between the light-emitting element 40 and the light-transmitting member 50 to the side of the light-emitting element 40, as shown in FIG. 8A, and covers the side of the light-emitting element 40. Also, FIG. 8B and FIG. 8C show a case where the adhesive 60a is pressed from above with a light-transmitting member 50a or 50b having a different size in a plan view relative to the mounting substrate 10 from the light-transmitting member 50 in FIG. 8A.

[0048] The adhesive 60a has a shape shown in FIG. 8A, FIG. 8B, and FIG. 8C depending on the size relationship between the light emitting element 40 and the light-transmitting member 50, 50a, or 50b. As shown in FIG. 8A, when the size of the light emitting element 40 is smaller than the size of the light-transmitting member 50 in a plan view of the mounting substrate 10, the adhesive 60a covers the side of the light emitting element 40. As shown in FIG. 8B, when the size of the light emitting element 40 is approximately equal to the size of the light-transmitting member 50a in a plan view of the mounting substrate 10, the adhesive 60a covers the side of both the light emitting element 40 and the light-transmitting member 50a. As shown in FIG. 8C, when the size of the light emitting element 40 is larger than the size of the light-transmitting member 50b in a plan view of the mounting substrate 10, the adhesive 60a covers the side of the light-transmitting member 50b. In this way, the shape of the protruding portion of the adhesive 60a changes depending on the size of the light-transmitting member, and the adhesive 60a covers at least one of the side of the light emitting element 40 and the side of the light-transmitting member.

[0049] Thereafter, the mounting substrate 10 with the adhesive 60a pressed against the light-transmitting member 50 is heated in an oven at 150° C. for about three hours to cure the adhesive 60a. During curing, a splash coating 20a is formed on the mounting substrate 10 around the light-emitting element 40 in a plan view (S15 in FIG. 3). As will be described in detail later, the splash coating 20a is altered to form a silicone resin cured thin film 20. FIG. 9A is a cross-sectional view for explaining a step of curing the adhesive 60a in the manufacturing process of the semiconductor device 1. FIG. 9B is a top view for explaining a step of curing the adhesive 60a in the manufacturing process of the semiconductor device 1.

[0050] 9A and 9B, due to heating during curing, the low molecular silicone and coupling agent in the silicone resin (liquid) evaporate from the adhesive 60a due to their high vapor pressure, and are scattered around and near the light emitting element 40 in a plan view of the mounting substrate 10. As a result, a scattered coating 20a in contact with the mounting substrate 10 is formed as a coating of a silicone resin cured product containing low molecular silicone and coupling agent. In addition, the adhesive 60a is cured by heating, and a second silicone resin cured product 60 is formed from the adhesive 60a.

[0051] FIG. 10 is a diagram showing an example of the relationship between the distance from the silicone resin (evaporation source) and the thickness of the formed scattering coating 20a. The distance from the evaporation source (adhesive 60a) in FIG. 10 is the distance from the side of the light emitting element 40 in a plan view of the mounting substrate 10 as shown in FIG. 9B. FIG. 10 shows the thickness of the scattering coating 20a when the height from the mounting substrate 10 where the adhesive 60a is located is 20 μm to 120 μm, and the thickness is thermally cured at 150° C. for 3 hours. The thickness of the scattering coating 20a is measured, for example, by repeating measurement by the TOF-SIMS method and sputtering to a thickness of about 1 nm using sputtering ions, and analyzing the position where the fragment ions derived from the scattering coating 20a are detected. The thickness of the silicone resin cured thin film 20 can also be measured by a similar method.

[0052] As shown in Fig. 10, the thickness of the scattered coating 20a on the mounting substrate 10 at a position 1 mm away from the evaporation source is, for example, 6 nm. In general, in the case of lateral scattering, the thickness of the scattered coating 20a can be approximated as being inversely proportional to the distance, so that the closer the distance from the evaporation source, the thicker the scattered coating 20a formed is. Therefore, the thickness of the scattered coating 20a may, for example, decrease monotonically with increasing distance from the side surface of the light emitting element 40, as shown by the dotted line in Fig. 10.

[0053] When a silicone resin cured product is further formed on the mounting substrate 10 on which the scattering coating 20a is formed, the silicone resin cured product is likely to peel off from the mounting substrate 10 at a position up to about 3 mm away from the light emitting element. In other words, at a position within 3 mm away from the light emitting element 40, the scattering coating 20a is formed on the mounting substrate 10 without any gaps, so that the silicone resin cured product is likely to peel off as easily as a general silicone resin cured product. On the other hand, the predicted thickness of the scattering coating 20a at a position 3 mm away from the light emitting element is 2 nm. When the scattering coating thickness is 2 nm or less, the scattering coating only partially covers the surface of the mounting substrate (i.e., covers it in an island shape), so that a part of the silicone resin cured product can directly adhere to the mounting substrate 10, and therefore it is considered that peeling is difficult.

[0054] Next, a UV-curable dam material 70a is formed on the mounting substrate 10 so as to surround the entire light-emitting element 40 in a plan view (S16 in FIG. 3). The dam material 70a serves as a frame for preventing the outflow of a material forming a reflective member that covers the side and bottom surfaces of the light-emitting element 40 in a later process. As will be described in detail later, a third silicone resin cured product 70 is formed by curing the dam material 70a.

[0055] FIG. 11 is a top view for explaining a process of forming a dam material 70a in the manufacturing process of the semiconductor device 1. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11. As shown in FIG. 11 and FIG. 12, the dam material 70a is formed by being applied to the mounting substrate 10 by a dispensing method or the like so as to surround the plurality of light-emitting elements 40. Three dam materials 70a are formed so as to surround the plurality of light-emitting elements 40 arranged in the vertical direction, but the shape surrounding the light-emitting elements 40 is not limited. The dam material 70a may be formed so as to surround two light-emitting elements 40 included in one semiconductor device after dicing, may be formed so as to surround the plurality of light-emitting elements 40 arranged in the horizontal direction, or may be formed so as to surround all the light-emitting elements 40 on the mounting substrate 10. In addition, the dam material 70a may overlap the upper surface of the scattering coating 20a in a plan view of the mounting substrate 10, or may be separated therefrom.

[0056] Here, as a structural requirement of the dam material 70a, it is better for the viscosity of the material forming the dam material 70a to be high, but if the viscosity is too high, it becomes difficult to discharge the material from the application nozzle. Therefore, the viscosity of the material forming the dam material 70a may be adjusted to a viscosity that does not lose its shape much after application, such as a paste-like toothpaste, specifically, a viscosity of about 100 Pa·s to 200 Pa·s.

[0057] For example, the material for forming the dam material 70a is applied by a dispensing method so as to form a thin line having a width of about 200 μm. For example, the thin line is formed by applying the material under the conditions that the inner diameter of the application nozzle is φ250 μm, the ambient temperature during application is 30° C., the viscosity of the material at 30° C. is about 200 Pa s, and the application speed is 2.8 mm / s.

[0058] In the present embodiment, the material for forming the dam member 70a is a UV-curable silicone resin, but it may be a thermosetting silicone resin. The case where the material for forming the dam member 70a is a thermosetting silicone resin will be described later.

[0059] Next, UV light is irradiated from above the mounting substrate 10 (S17 in FIG. 3). As a result, the mounting substrate 10 on which the scattering coating 20a and the linear dam material 70a shown in FIG. 11 and FIG. 12 are formed is irradiated with UV light, and the scattering coating 20a and the material forming the paste-like dam material 70a are simultaneously altered by UV curing. Specifically, in the alteration of the scattering coating 20a, dimethyl silicone is oxidized, and the methyl group in the silicone side chain is replaced with an OH group. The irradiation of UV light forms a silicone resin cured thin film 20 from the scattering coating 20a. In addition, the irradiation of UV light forms a third silicone resin cured material 70 from the dam material 70a, which functions as a frame that prevents the material forming the reflective member from flowing out in a later process. The lamp used for UV curing is, for example, a low-pressure mercury lamp, but may be another lamp that irradiates UV light, such as a high-pressure mercury lamp.

[0060] For example, in the UV light irradiation process, a low-pressure mercury lamp is used, and the temperature is 50°C in the air for 3 minutes with an accumulated light dose of 3000 mJ / cm. 2 The UV light irradiation conditions are not limited to the above conditions. For example, the UV light to be irradiated may be irradiated with an integrated light amount of 1000 mJ / cm. 2 to 5000mJ / cm 2 The UV light may be of an integrated light quantity of 1000, 3000 and 5000 mJ / cm 2 In the case where the silicone resin cured thin film 20 is formed from the scattering coating 20a by irradiating the UV light, an effect of improving the adhesive strength with the first silicone resin cured product 30 (reflective member) formed later is observed. The oxygen content per unit volume of the silicone resin cured thin film 20 formed by irradiating the UV light in this way will be described later.

[0061] Here, the surface of the mounting substrate 10 in contact with the silicone resin cured thin film 20 may have light reflectivity to UV light. This allows the UV light transmitted through the scattering coating 20a or the silicone resin cured thin film 20 to be reflected by the surface of the mounting substrate 10 and irradiated again onto the scattering coating 20a or the silicone resin cured thin film 20, thereby enhancing the effect of alteration. For example, in a mounting substrate whose surface is made of gold, aluminum, copper, or the like, the reflectance of UV light on the surface is 30% or more.

[0062] The thickness of the formed silicone resin cured thin film 20 may be 0.1 μm or less, or may be 0.01 μm or less. When the thickness of the silicone resin cured thin film 20 is thin, oxygen in the air required for the oxidation reaction by UV irradiation is supplied to the entire thickness of the silicone resin cured thin film 20. Therefore, the oxygen content per unit volume of the silicone resin cured thin film 20 is easily increased throughout the entire thickness. When the thickness of the silicone resin cured thin film 20 is thin, the generated gas such as water molecules generated inside the silicone resin cured thin film 20 can pass through the silicone resin cured thin film 20 and be released to the outside. When there is a portion where the OH group of the coupling agent of the silicone resin cured thin film 20 and the OH group of the mounting substrate 10 form a hydrogen bond, a dehydration reaction occurs due to UV irradiation to generate a covalent bond. Therefore, the adhesive strength between the silicone resin cured thin film 20 and the mounting substrate 10 is further increased. As a result, the water molecules generated by the dehydration reaction are released to the outside, which further accelerates the dehydration reaction, and the adhesive strength between the cured silicone resin thin film 20 and the mounting substrate 10 is improved.

[0063] As described above, the thickness of the scattering coating 20a may be monotonically decreased with increasing distance from the side surface of the light emitting element 40. Therefore, the thickness of the silicone resin cured thin film 20 formed from the scattering coating 20a may also be monotonically decreased with increasing distance from the side surface of the light emitting element 40. As a result, when the thickness of the silicone resin cured thin film 20 is thin, there are also regions where the silicone resin cured thin film 20 is not a continuous film. Therefore, the bonding between the mounting substrate 10 and the first silicone resin cured material 30 (for example, bonding via a coupling agent) coexists with the bonding between the silicone resin cured thin film 20 and the first silicone resin cured material 30, so that peeling of the first silicone resin cured material 30 is further suppressed.

[0064] Furthermore, the thickness of the scattering coating 20a is reduced by irradiation with UV light, and the thickness of the formed cured silicone resin thin film 20 at a distance of 1 mm from the side surface of the light emitting element 40 becomes, for example, 4 nm.

[0065] As described above, the dam material 70a is a UV-curable silicone resin. Therefore, the third silicone resin cured product 70 formed from the dam material 70a is a cured product of the UV-curable silicone resin. As a result, when the third silicone resin cured product 70 is formed, a sufficient amount of UV light is irradiated to alter the scattering coating 20a, so that the oxygen content of the silicone resin cured product thin film 20 formed from the scattering coating 20a can be increased. In addition, since the UV-curable silicone resin does not require a heating and cooling process for curing, the manufacturing time of the semiconductor device 1 is shortened, and the productivity of the semiconductor device 1 is improved.

[0066] The third silicone resin cured product 70 (dam material 70a) may be translucent to UV light. Specifically, the third silicone resin cured product 70 (dam material 70a) may have a transmittance of 50% or more to UV light with a wavelength of 254 nm. For example, the third silicone resin cured product 70 is made of a material that does not contain a UV absorbing material such as titanium oxide. As a result, the scattering coating 20a located in the area overlapping with the third silicone resin cured product 70 in a plan view of the mounting substrate 10 is also irradiated with UV light, so that the oxygen content of the silicone resin cured product thin film 20 formed from the scattering coating 20a can be increased.

[0067] Next, a material for forming a reflective member is filled between the light emitting element 40 and the third cured silicone resin 70 functioning as a frame, and cured (S18 in FIG. 3). Fig. 13 is a top view for explaining a process of filling and curing a material for forming a reflective member in a manufacturing process of the semiconductor device 1. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 13.

[0068] After the dam material 70a is cured to form the third silicone resin cured product 70, a material for forming a reflective member is injected (filled) between the light emitting element 40 and the third silicone resin cured product 70. As the material for forming the reflective member, for example, a silicone resin in which titanium oxide particles are dispersed as a light reflective material in a thermosetting dimethyl silicone resin with a low viscosity of about 20 Pa s is used.

[0069] After the low-viscosity reflective member forming material spreads between the light-emitting element 40 and the third silicone resin cured product 70 and the surface of the reflective member forming material becomes flat, the mounting substrate 10 is heated in an oven to cure the reflective member forming material. The reflective member forming material is cured, for example, at 150° C. for 3 hours. As a result, the first silicone resin cured product 30 is formed as the reflective member.

[0070] As shown in Figures 13 and 14, the first silicone resin cured product 30 is an area on the mounting substrate 10 on which the light-emitting element 40 is mounted, and is formed so as to surround the bottom and side surfaces of the light-emitting element 40, the side surfaces of the second silicone resin cured product 60, and the side surfaces of the light-transmitting member 50.

[0071] The material for forming the reflective member is not limited to liquid silicone resin, but may be a low-viscosity liquid light-transmitting medium mainly made of resin such as epoxy resin, acrylic resin, polyimide resin, urea resin, or fluororesin, or glass, in which a granular light-reflective material is dispersed. The light-reflective material is not limited to titanium oxide particles, but may be zinc oxide particles, for example. The reflective member such as the first silicone resin cured product 30 can be formed by curing a liquid resin containing a light-reflective material and a dispersant for the light-reflective material.

[0072] The first silicone resin cured product 30 does not have to be a reflective material containing a light-reflective material, and may be a sealing member or the like that does not contain a light-reflective material.

[0073] Finally, the semiconductor device 1 is divided into individual pieces by dicing (S19 in FIG. 3). FIG. 15 is a top view for explaining a process of dividing the semiconductor device 1 in the manufacturing process of the semiconductor device 1. As shown in FIG. 15, one mounting substrate 10 on which a plurality of semiconductor devices 1 are arranged in a matrix is ​​diced (separated) to divide into individual semiconductor devices 1. In dicing, for example, a rotating grindstone (dicing blade) is used to divide the semiconductor device 1 into individual pieces. The dotted line part C in FIG. 15 is the place where the cutting is performed. When cutting a hard mounting substrate 10 such as AlN, for example, a dicing blade having a width of about 100 μm to 150 μm is used. By dividing into individual pieces, the semiconductor device 1 shown in FIG. 1 and FIG. 2 is obtained.

[0074] [Test Example 1] Next, a test example 1 of the semiconductor device 1 according to the first embodiment will be described. In this test example, the semiconductor device 1 was manufactured by the above manufacturing method. In step S17 of FIG. 3 in the above manufacturing method, UV light was irradiated onto the scattering coating 20a under the conditions of using a low-pressure mercury lamp, an accumulated light amount of 3000 mJ / cm2, in the atmosphere, at an environmental temperature of 50°C, and irradiation for 3 minutes. Then, for the silicone resin cured thin film 20 and the first silicone resin cured material 30 of the manufactured semiconductor device 1, TOF-SIMS analysis was performed at a position 1 mm (thickness 6 nm) away from the light emitting element 40 in a plan view of the mounting substrate 10. Specifically, first, a part of the upper side of the first silicone resin cured material 30 was scraped off at a position 1 mm away from the light emitting element 40 in a plan view of the mounting substrate 10. Next, measurement by the TOF-SIMS method and sputtering to a thickness of about 1 nm by sputtering ions were repeated in a direction from the first silicone resin cured material 30 toward the silicone resin cured thin film 20 (thickness direction of the silicone resin cured thin film 20). In this way, the fragment ions were measured multiple times in the thickness direction. The amount of each fragment ion detected was normalized so that each measurement result could be compared. In other words, normalization results in the amount of fragment ions detected per unit volume. Then, for each of the first silicone resin cured product 30 and the cured silicone resin thin film 20, the normalized multiple measurement results (measurement results obtained multiple times while sputtering in the thickness direction) were averaged for each fragment ion to obtain the amount of fragment ions detected for the first silicone resin cured product 30 and the cured silicone resin thin film 20.

[0075] FIG. 16 is a diagram showing the amount of detected fragment ions in the silicone resin cured thin film 20. The ratio of the amount of detected fragment ions on the vertical axis shown in FIG. 16 is a value calculated by "ratio of detected amount=detected amount of the silicone resin cured thin film 20 / detected amount of the first silicone resin cured material 30" for each fragment ion. FIG. 16 also shows SiC2H5O, SiCH3O2, SiC2H7O2, Si2C3H9O3, SiO2, and SiO2H ions as detected fragment ions. Among these, SiC2H5O, SiCH3O2, SiC2H7O2, and Si2C3H9O3 ions are Si-CHO-based fragment ions, and are fragment ions derived from a dimethyl silicone skeleton. In addition, SiO2 and SiO2H ions are SiO2-based fragment ions, and the more oxygen content of the silicone resin, the more the amount of detected fragment ions increases. Therefore, in this specification, the average value of the detected amount of SiO2-based fragment ions is taken as the oxygen content. The oxygen content may be the oxygen content measured by a method other than the TOF-SIMS method.

[0076] As shown in FIG. 16, the ratio F1 of the detected amount of Si-CHO-based fragment ions is 90% or more and less than 110%, and the average of the values ​​of each fragment ion is almost 100% (about 1.0 times). Therefore, the detected amount of the silicone resin cured thin film 20 and the detected amount of the first silicone resin cured material 30 per unit volume are almost the same. In contrast, the ratio F2 of the detected amount of SiO2-based fragment ions is 128% (about 1.3 times) when the values ​​of each fragment ion are averaged. Therefore, the detected amount of the silicone resin cured thin film 20 per unit volume is greater than the detected amount of the first silicone resin cured material 30. In other words, the oxygen content per unit volume of the silicone resin cured thin film 20 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material.

[0077] Furthermore, not only the average detection amount at each thickness position of the cured silicone resin thin film 20 but also each detection amount at each thickness position of the cured silicone resin thin film 20 was greater than the detection amount of the first cured silicone resin material 30.

[0078] [Test Example 2] Next, a test example 2 for the semiconductor device 1 according to the first embodiment will be described. In this test example, when manufacturing the semiconductor device 1 in the test example 1, the integrated light amount among the UV light irradiation conditions in step S17 was set to 1000, 3000, and 5000 mJ / cm. 2 In step S17, the scattered coating 20a was not irradiated with UV light (in other words, the integrated light amount in step S17 was 0 mJ / cm 2 A semiconductor device (1) was also manufactured. The obtained semiconductor device was subjected to a test for determining whether the cured silicone resin thin film 20 (accumulated light amount 0 mJ / cm 2 In the case of Example 1, a peeling test was carried out between the scattering coating 20a) and the first silicone resin cured product 30. The peeling test was carried out under stress conditions of 0.5 MPa and 2.0 MPa. The analysis by TOF-SIMS method in Test Example 1 was also carried out under conditions of an accumulated light amount of 0 mJ / cm 2 The same test was also carried out on the semiconductor device manufactured under the above conditions.

[0079] As a result of the peeling test, in a semiconductor device manufactured without irradiating the scattering coating 20a with UV light, the interface between the scattering coating 20a and the first silicone resin cured product 30 peeled off under both stress conditions of 0.5 MPa and 2.0 MPa. On the other hand, when the accumulated light dose was 1000, 3000, and 5000 mJ / cm 2 In the semiconductor devices manufactured by irradiating UV light in each of the above, no peeling occurred under a stress condition of 0.5 MPa. In addition, in the semiconductor devices manufactured by the above, under a stress condition of 2.0 MPa, a cohesive failure occurred in which a part of the first silicone resin cured product 30 broke inside the first silicone resin cured product 30 while remaining bonded to the silicone resin cured product thin film 20. As described above, the scattering coating 20a was irradiated with UV light to form the silicone resin cured product thin film 20, and peeling was suppressed.

[0080] Fig. 17 is a diagram showing the relationship between the integrated dose of UV light and the ratio of the detected amount of SiO2-based fragment ions, based on the ratio of the detected amount of fragment ions shown in Fig. 16. The vertical axis in Fig. 17 is the ratio of the detected amount of SiO2-based fragment ions in the silicone resin cured thin film 20 or the scattered coating 20a, measured by the method of Test Example 1. The horizontal axis in Fig. 17 is the integrated dose of UV light irradiation in step S17. If it is considered that the ratio of the detected amount of SiO2-based fragment ions increases linearly with respect to the integrated dose, then as described above, when the integrated dose is 1000 mJ / cm 2 In this case, the peeling mode shifts to cohesive failure, so when the ratio of the detected amounts is 1.1 times or more, it can be said that the adhesive strength is improved. In other words, the oxygen content per unit volume of the silicone resin cured thin film 20 in the entire thickness direction may be 1.1 times or more the oxygen content per unit volume of the first silicone resin cured material 30. In such a silicone resin cured thin film 20, a large number of OH groups that improve adhesiveness are present on the surface of the silicone resin cured thin film 20, and the adhesive strength with the first silicone resin cured material 30 is improved. From the viewpoint of further improving the adhesiveness, the oxygen content per unit volume of the silicone resin cured thin film 20 in the entire thickness direction may be 1.25 times or more the oxygen content per unit volume of the first silicone resin cured material 30.

[0081] In addition, from the viewpoint of suppressing a decrease in strength of the cured silicone resin thin film 20, the oxygen content per unit volume of the cured silicone resin thin film 20 throughout the entire thickness direction may be 1.8 times or less the oxygen content per unit volume of the first cured silicone resin 30.

[0082] Furthermore, even when the thickness of the cured silicone resin thin film 20 was changed, the peel test results did not change, and no clear correlation was confirmed between the thickness of the cured silicone resin thin film 20 and improved adhesive strength.

[0083] (Embodiment 2) Next, a semiconductor device according to embodiment 2 will be described. In the following description of embodiment 2, differences from embodiment 1 will be mainly described, and descriptions of commonalities will be omitted or simplified.

[0084] 18 is a cross-sectional view showing a configuration of a semiconductor device 2 according to embodiment 2. The semiconductor device 2 differs from the semiconductor device 1 according to embodiment 1 in that it has a second silicone resin cured product 61 instead of the second silicone resin cured product 60, and has a silicone resin cured product thin film 21 in contact with the second silicone resin cured product 61.

[0085] As shown in FIG. 18, the semiconductor device 2 has a mounting substrate 10, silicone resin cured thin films 20 and 21, a first silicone resin cured product 30, a light-emitting element 40, a light-transmitting member 50, a second silicone resin cured product 61, and a third silicone resin cured product 70.

[0086] The silicone resin cured thin film 21 contacts the second silicone resin cured material 61 and the first silicone resin cured material 30, and covers the outer periphery of the second silicone resin cured material 61. The silicone resin cured thin film 21 is located between the second silicone resin cured material 61 and the first silicone resin cured material 30, and bonds the second silicone resin cured material 61 and the first silicone resin cured material 30. The silicone resin cured thin film 21 contains, for example, silicone having an OH group formed therein and a coupling agent, similar to the silicone resin cured thin film 20. The oxygen content per unit volume of the silicone resin cured thin film 21 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material 30.

[0087] The second silicone resin cured product 61 is disposed between the light emitting element 40 and the light-transmitting member 50, and covers the side surface of the light emitting element 40. In the present embodiment, the second silicone resin cured product 61 is an example of a base. The second silicone resin cured product 61 may cover at least one of the side surface of the light emitting element 40 and the side surface of the light-transmitting member 50. The second silicone resin cured product 61 has a portion that protrudes from between the light emitting element 40 and the light-transmitting member 50 to the side surface. The second silicone resin cured product 61 is in contact with the silicone resin cured product thin film 21 at the portion of the second silicone resin cured product 61 that protrudes from between the light emitting element 40 and the light-transmitting member 50 to the side surface.

[0088] The resin structure of the second silicone resin cured product 61 is substantially the same as that of the silicone resin cured product thin film 21. In this embodiment, the resin structure being substantially the same means that, among the fragment ions detected by the TOF-SIMS method, the normalized detection amounts of the Si-CHO-based fragment ions derived from the main skeleton of the silicone resin cured product are substantially the same. For example, for each of the Si-CHO-based fragment ions, the ratio of the detection amount of the silicone resin cured product thin film 21 to the detection amount of the second silicone resin cured product 61 is 90% or more and less than 110%, similar to the ratio of the detection amounts of the fragment ions shown in FIG. 16.

[0089] Next, a method for manufacturing the semiconductor device 2 will be described. The semiconductor device 2 is manufactured, for example, by using a mounting substrate 10 having optical reflectivity to UV light in the manufacturing method of the semiconductor device 1. FIG. 19 is a cross-sectional view for explaining a step of irradiating UV light in the manufacturing process of the semiconductor device 2. FIG. 19 shows a case where a mounting substrate 10 is used in step S17 of the manufacturing process shown in FIG. 3, in which the surface of the mounting substrate 10 on the side of the first silicone resin cured product 30 to be formed later (in other words, the upper surface of the mounting substrate 10) has optical reflectivity to UV light. As shown in FIG. 19, the UV light is reflected by the upper surface of the mounting substrate 10 and is also irradiated to the surface of the second silicone resin cured product 60 (see FIG. 12), so that the vicinity of the surface of the second silicone resin cured product 60 is altered. As a result, the second silicone resin cured product 61 and the silicone resin cured product thin film 21 are formed from the second silicone resin cured product 60. In this manner, the semiconductor device 2 having the silicone resin cured product thin film 21 in contact with the side surface of the second silicone resin cured product 61 is obtained. In this way, since the upper surface of the mounting substrate 10 has optical reflectivity to UV light, even areas that are in shadow when exposed to direct UV light are efficiently irradiated with UV light, thereby increasing the oxygen content of the silicone resin cured thin film 21.

[0090] The mounting substrate 10 does not need to have optical reflectivity for UV light, and the second silicone resin cured product 60 may be irradiated with UV light by adjusting the position of a lamp or the like.

[0091] As described above, the semiconductor device 2 has the second silicone resin cured product 61, the silicone resin cured product thin film 21 in contact with the second silicone resin cured product 61, and the first silicone resin cured product 30 in contact with the silicone resin cured product thin film 21. The oxygen content per unit volume of the silicone resin cured product thin film 21 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured product 30. In the semiconductor device 2, the second silicone resin cured product 61 is a product obtained by curing a silicone resin, and the resin structure of the second silicone resin cured product 61 is approximately the same as the resin structure of the silicone resin cured product thin film 21.

[0092] In this way, the oxygen content per unit volume of the silicone resin cured thin film 21 in contact with the second silicone resin cured material 61 is higher than the oxygen content per unit volume of the first silicone resin cured material 30. Such a silicone resin cured thin film 21 has the same effect as the silicone resin cured thin film 20 according to the first embodiment, and has high adhesion to the first silicone resin cured material 30. In addition, since the resin structure of the second silicone resin cured material 61 is substantially the same as the resin structure of the silicone resin cured thin film 21, the silicone resin cured thin film 21 does not have a brittle structure even if it has a high oxygen content, and maintains its mechanical strength. Therefore, the silicone resin cured thin film 21 is less likely to break. Therefore, the semiconductor device 2 can suppress peeling of the first silicone resin cured material 30.

[0093] The semiconductor device 2 further includes a mounting substrate 10, a light-emitting element 40 mounted on the upper side of the mounting substrate 10, and a light-transmitting member 50 arranged on the upper side of the light-emitting element 40. The second cured silicone resin 61 is arranged between the light-emitting element 40 and the light-transmitting member 50, and covers the side surface of the light-emitting element 40. The first cured silicone resin 30 is arranged on the upper side of the mounting substrate 10.

[0094] As a result, the second silicone resin cured material 61 covering the side surface of the light-emitting element 40 and the first silicone resin cured material 30 are bonded via the silicone resin cured material thin film 21. As described above, the adhesion between the silicone resin cured material thin film 21 and the first silicone resin cured material 30 is high. Therefore, peeling between the silicone resin cured material thin film 21 and the first silicone resin cured material 30 in contact with the second silicone resin cured material 61 covering the side surface of the light-emitting element 40 is suppressed.

[0095] (Embodiment 3) Next, a description will be given of a semiconductor device according to embodiment 3. In the following description of embodiment 3, differences from embodiment 1 will be mainly described, and description of commonalities will be omitted or simplified.

[0096] 20 is a cross-sectional view showing a configuration of a semiconductor device 3 according to embodiment 3. The semiconductor device 3 differs from the semiconductor device 1 according to embodiment 1 in that it has a third silicone resin cured product 71 instead of the third silicone resin cured product 70, and has a silicone resin cured product thin film 22 in contact with the third silicone resin cured product 71.

[0097] As shown in FIG. 20, the semiconductor device 3 has a mounting substrate 10, silicone resin cured thin films 20 and 22, a first silicone resin cured product 30, a light-emitting element 40, a light-transmitting member 50, a second silicone resin cured product 60, and a third silicone resin cured product 71.

[0098] The silicone resin cured thin film 22 is in contact with the third silicone resin cured material 71 and the first silicone resin cured material 30. The silicone resin cured thin film 22 covers the third silicone resin cured material 71. The silicone resin cured thin film 22 is located between the third silicone resin cured material 71 and the first silicone resin cured material 30, and bonds the third silicone resin cured material 71 and the first silicone resin cured material 30. The silicone resin cured thin film 22 contains, for example, silicone having an OH group formed therein and a coupling agent, similar to the silicone resin cured thin film 20. The oxygen content per unit volume of the silicone resin cured thin film 22 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material 30.

[0099] The first silicone resin cured product 30 is disposed in a region surrounded by the third silicone resin cured product 71, the mounting substrate 10, and the light emitting element 40.

[0100] The third silicone resin cured product 71 is disposed on the upper side of the mounting substrate 10 and outside the light emitting element 40 in a plan view with respect to the mounting substrate 10, as at least a part of a frame surrounding the light emitting element 40. In the present embodiment, the third silicone resin cured product 71 is an example of a base.

[0101] The resin structure of the third silicone resin cured product 71 is substantially the same as the resin structure of the silicone resin cured product thin film 22. For example, for each Si-CHO-based fragment ion, the ratio of the detection amount of the silicone resin cured product thin film 22 to the detection amount of the third silicone resin cured product 71 is 90% or more and less than 110%, similar to the ratio of the detection amounts of the fragment ions shown in FIG.

[0102] Next, a description will be given of a method for manufacturing the semiconductor device 3. Fig. 21 is a flowchart for explaining a method for manufacturing the semiconductor device 3 according to the third embodiment.

[0103] 21, steps S11 to S15 are the same as those in the manufacturing method of the semiconductor device 1 according to the first embodiment, and therefore the description thereof will be omitted. By the process up to step S15, a scattering coating 20a is formed around the light emitting element 40 in a plan view with respect to the mounting substrate 10, as shown in FIGS. 9A and 9B.

[0104] Next, UV light is irradiated from above the mounting substrate 10 (S31 in FIG. 21). FIG. 22 is a cross-sectional view for explaining the step of irradiating UV light for the first time in the manufacturing process of the semiconductor device 3. As shown in FIG. 22, the mounting substrate 10 on which the scattering coating 20a has been formed is irradiated with UV light to cause the scattering coating 20a to change in quality. As a result, the silicone resin cured thin film 20 is formed from the scattering coating 20a. The irradiation conditions of UV light, etc. are the same as those of step S17 in FIG. 3 described above, and therefore will not be described.

[0105] Next, a thermosetting dam material 71a is formed on the mounting substrate 10 so as to surround the entire light emitting element 40 in a plan view (S32 in FIG. 21). FIG. 23 is a cross-sectional view for explaining a step of forming the dam material 71a in the manufacturing process of the semiconductor device 3. As shown in FIG. 23, the dam material 71a is formed by being applied by a dispensing method or the like onto the mounting substrate 10 so as to surround the light emitting element 40. The material for forming the dam material 71a is a thermosetting silicone resin. The structural requirements of the dam material 71a, the shape to be formed, and the method of applying the material for forming the dam material 71a are similar to those of the dam material 70a in step S16 in FIG. 3 described above, and therefore will not be described here.

[0106] Next, the mounting substrate 10 on which the dam material 71a is formed is heated to harden the dam material 71a. During hardening, a splash coating 20b is formed on the mounting substrate 10 around the dam material 71a in a plan view of the mounting substrate 10 (S33 in FIG. 21). FIG. 24 is a cross-sectional view for explaining a step of hardening the dam material 71a in the manufacturing process of the semiconductor device 3. Due to heating during hardening, low molecular silicone and coupling agent in the silicone resin (liquid) evaporate from the dam material 71a due to their high vapor pressure, and are splashed around and near the dam material 71a in a plan view of the mounting substrate 10. As a result, as shown in FIG. 24, a splash coating 20b is formed in contact with the mounting substrate 10 and the silicone resin cured thin film 20. Since the silicone resin cured thin film 20 with a high oxygen content is formed from the splash coating 20b by the irradiation of UV light in step S31, the adhesive strength between the silicone resin cured thin film 20 and the splash coating 20b is high. Therefore, the silicone resin cured thin film 20 and the splash coating 20b are not easily peeled off.

[0107] Furthermore, the dam material 71a is cured by heating, and the dam material 71a forms a third silicone resin cured product 71. The curing is performed, for example, at a temperature about 50° C. higher than the gelling temperature of the material forming the dam material 71a for about 3 hours.

[0108] Next, UV light is irradiated again from above the mounting substrate 10 (S34 in FIG. 21). FIG. 25 is a cross-sectional view for explaining the step of irradiating UV light for the second time in the manufacturing process of the semiconductor device 3. As shown in FIG. 25, the mounting substrate 10 on which the scattering film 20b has been formed is irradiated with UV light to cause the scattering film 20b to degenerate. As a result, the silicone resin cured thin film 20 is formed from the scattering film 20b. In addition, the surface of the third silicone resin cured product 71 is also irradiated with UV light, so that the vicinity of the surface of the third silicone resin cured product 71 is degenerated, and a silicone resin cured thin film 22 is formed. The UV light irradiation conditions and the like are the same as those of step S17 in FIG. 3 described above, and therefore will not be described.

[0109] Thereafter, a material for forming a reflective member is filled and cured to form a first silicone resin cured product 30, and the semiconductor devices 3 are separated by dicing (S18 and S19 in FIG. 21). These steps are the same as steps S18 and S19 in FIG. 3 described above, and therefore a description thereof will be omitted. In this manner, the mounting substrate 10 on which a plurality of semiconductor devices 3 are arranged in a matrix is ​​separated by dicing to obtain the semiconductor device 3 shown in FIG. 20.

[0110] As described above, the semiconductor device 3 has the third silicone resin cured product 71, the silicone resin cured product thin film 22 in contact with the third silicone resin cured product 71, and the first silicone resin cured product 30 in contact with the silicone resin cured product thin film 22. The oxygen content per unit volume of the silicone resin cured product thin film 22 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured product 30. In the semiconductor device 2, the third silicone resin cured product 71 is a product obtained by curing a silicone resin, and the resin structure of the third silicone resin cured product 71 is approximately the same as that of the silicone resin cured product thin film 22.

[0111] Such a cured silicone resin thin film 22 can provide the same effects as the cured silicone resin thin film 21 according to the second embodiment, and therefore the semiconductor device 3 can prevent the first cured silicone resin 30 from peeling off.

[0112] The semiconductor device 3 further includes a mounting substrate 10 and a light-emitting element 40 mounted on the upper side of the mounting substrate 10. The third silicone resin cured material 71 is disposed on the upper side of the mounting substrate 10 and outside the light-emitting element 40 as at least a part of a frame surrounding the light-emitting element 40. The first silicone resin cured material 30 is disposed in a region surrounded by the third silicone resin cured material 71, the mounting substrate 10, and the light-emitting element 40.

[0113] As a result, the third silicone resin cured material 71 arranged as a frame surrounding the light-emitting element 40 and the first silicone resin cured material 30 are bonded via the silicone resin cured material thin film 22. As described above, the adhesion between the silicone resin cured material thin film 22 and the first silicone resin cured material 30 is high. Therefore, peeling between the silicone resin cured material thin film 22 and the first silicone resin cured material 30 in contact with the third silicone resin cured material 71 positioned so as to surround the light-emitting element 40 is suppressed.

[0114] (Other embodiments) Although the semiconductor device according to the present disclosure has been described based on the embodiments, the present disclosure is not limited to the above-described embodiments.

[0115] For example, in the above embodiment, the semiconductor device is a light-emitting device having the light-emitting element 40, the light-transmitting member 50, and the second silicone resin cured product 60, but is not limited to this. The semiconductor device may be a semiconductor device having other semiconductor elements such as transistors or diodes instead of the light-emitting element 40, etc.

[0116] In the above-mentioned first and second embodiments, the semiconductor device has the third silicone resin cured product 70, but this is not limited thereto. For example, in order to miniaturize the semiconductor device, a portion of the third silicone resin cured product 70 may be cut by dicing in step S19. Also, instead of the third silicone resin cured product 70, a frame may be formed on the mounting substrate 10 using another resin material, ceramic, or the like.

[0117] In the third embodiment, the manufacturing process of the semiconductor device 3 includes the steps of curing the adhesive 60a and the dam material 71a (steps S15 and S34), respectively, but is not limited to this. For example, the step of curing the adhesive 60a in step S15 may be omitted, and after the dam material 71a is formed, the adhesive 60a and the dam material 71a may be cured by heating. In this case, since the splash coating 20a is not formed in the step of curing the adhesive 60a, the step of irradiating UV light (step S31) can also be omitted.

[0118] In the third embodiment, a thermosetting silicone resin is used as the dam material 71a, but a UV-curable silicone resin may be used. In this case, the step of curing the dam material 71a (step S33) can be omitted. Furthermore, in step S34, in addition to the irradiation of UV light for curing the UV-curable silicone resin, irradiation of UV light for altering the surface of the formed third silicone resin cured product 71 is performed.

[0119] In the above-mentioned second and third embodiments, the semiconductor device has the silicone resin cured thin film 20 in contact with the mounting substrate 10, but this is not limited thereto. For example, in the step of curing the adhesive 60a (step S15), the formation of the scattering coating 20a may be prevented by generating an air flow or the like, thereby making it possible to provide a semiconductor device that does not have the silicone resin cured thin film 20 on the mounting substrate 10.

[0120] In addition, the present disclosure also includes forms obtained by applying various modifications to the embodiments that a person skilled in the art may conceive, and forms realized by arbitrarily combining the components and functions of each embodiment within the scope that does not deviate from the spirit of the present disclosure. [Industrial Applicability]

[0121] The semiconductor device of the present disclosure can be used as a semiconductor device coated with a resin material, and is useful, for example, as a semiconductor device using a light emitting element as a semiconductor element. [Explanation of symbols]

[0122] 1, 2, 3 Semiconductor Device 10 Mounting board 11 Conductive Pattern 20, 21, 22 Thin films of silicone resin 20a, 20b Splash coating 30 First silicone resin cured product 40 Light emitting element 50, 50a, 50b Translucent member 60, 61 Second silicone resin cured product 60a Adhesive 70, 71 Third silicone resin cured product 70a, 71a Dam material

Claims

1. A mounting substrate; a silicone resin cured thin film in contact with the mounting substrate; a first silicone resin cured material in contact with the silicone resin cured material thin film, the oxygen content per unit volume of the cured silicone resin thin film in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin thin film; Semiconductor device.

2. A light emitting element mounted on an upper side of the mounting substrate; a light-transmitting member disposed above the light-emitting element; a second silicone resin cured product disposed between the light-emitting element and the light-transmitting member and covering at least one of a side surface of the light-emitting element and a side surface of the light-transmitting member, the cured silicone resin thin film is disposed around and in the vicinity of a side surface of the light-emitting element in a plan view with respect to the mounting substrate; The semiconductor device according to claim 1 .

3. the thickness of the cured silicone resin thin film monotonically decreases with increasing distance from the side surface of the light-emitting element; The semiconductor device according to claim 2 .

4. The thickness of the silicone resin cured film is 0.1 μm or less. The semiconductor device according to claim 2 or 3.

5. the oxygen content of the thin film of the cured silicone resin is 1.1 times or more the oxygen content of the first cured silicone resin in the entire thickness direction; The semiconductor device according to claim 2 .

6. the surface of the mounting substrate in contact with the silicone resin cured thin film has optical reflectivity to UV light; The semiconductor device according to claim 2 .

7. The cured silicone resin thin film further includes a reflective member having a light reflectivity to UV light, the reflective member being disposed in the vicinity of the cured silicone resin thin film. the oxygen content per unit volume in the entire thickness direction of a portion of the cured silicone resin thin film near the reflective member is higher than the oxygen content per unit volume in the entire thickness direction of a portion away from the reflective member than the oxygen content per unit volume in the entire thickness direction of a portion of the cured silicone resin thin film near the reflective member; The semiconductor device according to claim 2 .

8. a third silicone resin cured material disposed on an upper side of the mounting substrate and in contact with an outer side of the first silicone resin cured material; The third silicone resin cured product is a cured product of a UV-curable silicone resin. The semiconductor device according to claim 2 .

9. The third silicone resin cured product is translucent to UV light. The semiconductor device according to claim 8.

10. A light emitting element mounted on an upper side of the mounting substrate; a third silicone resin cured material surrounding the light emitting element, the third silicone resin cured material being disposed on the upper side of the mounting substrate and outside the light emitting element; and a thin film of another cured silicone resin in contact with the third cured silicone resin and the first cured silicone resin, the first cured silicone resin is disposed in a region surrounded by the third cured silicone resin, the mounting substrate, and the light emitting element, the oxygen content per unit volume of the other silicone resin cured thin film is greater than the oxygen content per unit volume of the first silicone resin cured thin film in the entire thickness direction; The semiconductor device according to claim 1 .

11. A light emitting element mounted on an upper side of the mounting substrate; a light-transmitting member disposed above the light-emitting element; a second silicone resin cured product disposed between the light-emitting element and the light-transmitting member; the second silicone resin cured product further includes a portion covering at least one of a side surface of the light-emitting element and a side surface of the light-transmitting member, and a thin film of another silicone resin cured product in contact with the first silicone resin cured product, the first cured silicone resin is disposed on an upper side of the mounting substrate, the oxygen content per unit volume of the other silicone resin cured thin film is greater than the oxygen content per unit volume of the first silicone resin cured thin film in the entire thickness direction; The semiconductor device according to claim 1 .

12. a surface of the mounting substrate on the side of the first silicone resin cured product has light reflectivity to UV light; The semiconductor device according to claim 10 or 11.

Images