Semiconductor Device
The semiconductor package addresses heat dissipation issues by using terminals with multiple downward-bent portions for elastic deformation, ensuring consistent heat sink contact and reduced mounting costs, thus enhancing heat radiation and connection reliability.
Patent Information
- Application Number
- JP2021198300
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-12-07
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2041-12-07
AI Technical Summary
Conventional semiconductor packages face challenges in achieving effective heat dissipation due to the U-shaped bent portion of the lead terminal interfering with the heat sink, preventing proper contact and limiting heat dissipation performance, especially as demand increases for smaller and lower-cost substrates with higher output capacity.
The semiconductor package design includes terminals with at least two downward-bent portions having obtuse angles, allowing for sufficient elastic deformation, ensuring proper contact between the heat sink and a flat heat dissipation surface, and accommodating varying substrate heights and shapes without additional fixing mechanisms.
This design maintains effective heat radiation performance by ensuring consistent contact between the heat sink and the heat dissipation surface, reducing mounting costs, and enhancing the reliability of soldered connections while accommodating different substrate configurations.
Smart Images

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Abstract
Description
[Technical field]
[0001] The present disclosure relates to a semiconductor package and a semiconductor device. [Background technology]
[0002] Semiconductor packages for driving small capacity motors in home appliances and industrial applications generally adopt a transfer mold type and insertion mounting type outer shape due to the need to dissipate heat appropriately in response to the amount of heat generated. Conventional surface mount semiconductor packages have U-shaped bends with acute bending angles in the lead terminals (see, for example, Patent Document 1 (Figure 2)). The U-shaped bends of the lead terminals elastically deform to prevent large stress from acting on the soldered parts of the lead terminals. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Japanese Patent Application Publication No. 06-085153 Summary of the Invention [Problem to be solved by the invention]
[0004] In recent years, there has been an increasing demand for smaller boards and lower costs for systems that incorporate semiconductor packages for driving motors, which has led to demands for increased output capacity relative to the external size of the package. As part of this trend, efforts are being made to increase the output capacity and attach heat sinks to surface-mount semiconductor packages that were previously only used for small-capacity applications such as fan motors. However, in conventional technology, the U-shaped bent portion of the lead terminal was positioned higher than the top surface of the package. This resulted in contact between the lead terminal and the heat sink, making it impossible to properly contact the heat sink with the top surface of the package, and making it impossible to obtain good heat dissipation.
[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor package and a semiconductor device that can provide good heat dissipation properties. [Means for solving the problem]
[0006] The present disclosure Semiconductor Device teeth, the semiconductor package includes a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin sealing the semiconductor chip and a portion of the plurality of terminals, a substrate, and a heat sink, an upper surface of the sealing resin being a flat heat dissipation surface, the plurality of terminals protrude from first and second side surfaces opposed to each other of the sealing resin, a tip portion of each terminal having a substrate bonding surface located below a lower surface of the sealing resin, each terminal being located below the heat dissipation surface and having at least two bent portions bent downward, the bent portions having an obtuse angle, the plurality of terminals having a control terminal protruding from the first side surface and a main terminal protruding from the second side surface and having a width greater than that of the control terminal, the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material, the heat sink is attached to the heat dissipation surface of the semiconductor package, and a gap between the substrate and the heat sink on the control terminal side is narrower than a gap between the substrate and the heat sink on the main terminal side. It is characterized by: Effect of the Invention
[0007] In the present disclosure, each terminal has at least two bent portions bent downward. The bent portions have an obtuse angle. When the tip of each terminal is fixed and a downward stress is applied to the heat dissipation surface of the sealing resin when the heat sink is attached, each of the bent portions elastically deforms. This allows the terminal to have a sufficient elastic deformation width in the height direction. Therefore, the contact between the heat dissipation surface of the sealing resin and the heat sink is appropriately maintained, and good heat dissipation can be obtained. [Brief description of the drawings]
[0008] [Figure 1] 1 is a plan view showing the inside of a semiconductor package according to a first embodiment. [Diagram 2] 1 is a side view showing a semiconductor package according to a first embodiment. [Diagram 3] 1 is a side view showing a semiconductor device according to a first embodiment. [Figure 4] FIG. 11 is a side view showing a semiconductor device according to a comparative example. [Diagram 5] 10 is a side view showing a modified example of the semiconductor device according to the first embodiment. FIG. [Figure 6] FIG. 11 is a side view showing a semiconductor device according to a second embodiment. [Figure 7] 11 is a side view showing a first modified example of the semiconductor device according to the second embodiment. FIG. [Figure 8] 11 is a side view showing a first modified example of the semiconductor device according to the second embodiment. FIG. [Figure 9]13 is a side view showing a second modified example of the semiconductor device according to the second embodiment. FIG. [Figure 10] FIG. 13 is a side view showing a third modified example of the semiconductor device according to the third embodiment. [Figure 11] FIG. 11 is a top view showing a semiconductor package according to a third embodiment. [Figure 12] FIG. 11 is a side view showing a semiconductor device according to a third embodiment. [Figure 13] FIG. 13 is a side view showing a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0009] A semiconductor package and a semiconductor device according to an embodiment will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.
[0010] Embodiment 1 1 is a plan view showing the inside of a semiconductor package according to embodiment 1. This semiconductor package 100 is a three-phase inverter for driving a motor, and is of a surface mount type. Semiconductor chips 1a to 1f are power semiconductor chips such as IGBTs, MOSFETs, or Di.
[0011] The driving IC chip 2a is wire-connected to the control terminals of the high-side semiconductor chips 1a to 1c. The driving IC chip 2b is wire-connected to the control terminals of the low-side semiconductor chips 1d to 1f. The driving IC chips 2a and 2b are wire-connected to a plurality of control terminals 3. The driving IC chip 2a drives the high-side semiconductor chips 1a to 1c. The driving IC chip 2b drives the low-side semiconductor chips 1d to 1f.
[0012] Semiconductor chips 1a to 1c are mounted on a P-phase main terminal 4. Semiconductor chips 1d to 1f are mounted on U-, V-, and W-phase main terminals 4, respectively. Semiconductor chips 1a to 1f are connected by wires to the U-, V-, W-, UP-, VP-, and WP-phase main terminals 4, respectively.
[0013] The semiconductor chips 1a-1f, the driving IC chips 2a, 2b, some of the control terminals 3, and some of the main terminals 4 are sealed by transfer molding with a sealing resin 5 such as epoxy resin. The sealing resin 5 has a rectangular shape in a plan view, with a first side surface 5a and a second side surface 5b that face each other as the longer sides. The control terminals 3 protrude from the first side surface 5a. The main terminals 4 protrude from the second side surface 5b. The semiconductor chips 1a-1f and the driving IC chips 2a, 2b are connected to the outside through the control terminals 3 and main terminals 4 protruding from the sealing resin 5. The main terminals 4 output current to the motor or connect to a high-voltage power supply. The control terminals 3 input motor drive signals, input protection signals, output error signals, and supply IC drive power.
[0014] 2 is a side view showing the semiconductor package according to embodiment 1. The upper surface of the sealing resin 5 is a flat heat dissipation surface. The tips of the main terminals 4 and the control terminals 3 have substrate bonding surfaces 6 located below the lower surface of the sealing resin 5. The substrate bonding surfaces 6 of the multiple main terminals 4 and the multiple control terminals 3 are located at the same height.
[0015] The main terminal 4 and the control terminal 3 are located below the heat dissipation surface 5c. The main terminal 4 and the control terminal 3 have at least two bent portions 7a and 7b bent downward. The angles θ1 and θ2 of the bent portions 7a and 7b are obtuse angles. The substrate bonding surface 6 of the semiconductor package is bonded to an electrode of the substrate 101 via a bonding material 8 such as solder.
[0016] 3 is a side view showing the semiconductor device according to embodiment 1. A heat sink 102 is attached to a heat dissipation surface 5c of a semiconductor package 100. Between the heat dissipation surface 5c and the heat sink 102, a heat dissipation grease 10 or an insulating heat dissipation resin sheet or the like is provided as a heat transfer member.
[0017] The heat sink 102 is fixed to the substrate 101 with screws 9. Tightening the screws 9 presses the outer shape of the sealing resin 5 downward, elastically deforming the main terminals 4 and the control terminals 3 of the semiconductor package 100. The repulsive force of the elastically deformed main terminals 4 and control terminals 3 presses the heat dissipation surface 5c of the sealing resin 5 against the heat sink 102.
[0018] A spacer 11 of an appropriate height is inserted between the heat sink 102 and the substrate 101 so that the bottom surface of the sealing resin 5 does not come into contact with the substrate 101 after the screws 9 are fastened. The spacer 11 is provided at the screw 9, but is not limited thereto, and the screw 9 may be provided in another location as long as the substrate 101 and the heat sink 102 can be kept at an appropriate distance.
[0019] Conventionally, each terminal has only one bent portion. Since only this one bent portion elastically deforms, the elastic deformation width in the height direction is small. In contrast, in this embodiment, each of the main terminal 4 and the control terminal 3 has at least two bent portions 7a, 7b bent downward. The angles θ1, θ2 of the bent portions 7a, 7b are obtuse angles. When the heat sink 102 is attached, if a downward stress is applied to the heat dissipation surface 5c of the sealing resin 5 with the tip of each terminal fixed, the two bent portions 7a, 7b are elastically deformed. Therefore, the main terminal 4 and the control terminal 3 can have a sufficient elastic deformation width in the height direction. Therefore, the contact between the heat dissipation surface 5c of the sealing resin 5 and the heat sink 102 is appropriately maintained, and good heat dissipation can be obtained.
[0020] Furthermore, the main terminals 4 and the control terminals 3 are located below the heat dissipation surface 5c and have no portions located above the heat dissipation surface 5c. Therefore, the main terminals 4 and the control terminals 3 do not come into contact with the heat sink 102, and the heat sink 102 can be appropriately brought into contact with the heat dissipation surface 5c.
[0021] In addition, in the conventional technology, the bending portion can only deform in the horizontal direction, so the vertical elasticity does not work and the height cannot be adjusted. In contrast, in the present embodiment, at least two bending portions 7a and 7b are elastically deformed, so that the vertical elasticity works and the height can be adjusted. Therefore, semiconductor packages of different heights can be mounted on the same heat sink 102.
[0022] FIG. 4 is a side view showing a semiconductor device according to a comparative example. A large-sized heat sink is required to dissipate heat from a surface-mounted semiconductor package that has an increased output capacity and thus generates a large amount of heat. In a conventional DIP-shaped semiconductor device, the outer shape of the sealing resin is fixed with screws. However, the weight of the heat sink is supported by the soldered portion of the terminal, and deterioration of the soldered portion due to vibration during system operation becomes a problem. Therefore, in the comparative example, the heat sink 102 is fixed to the substrate 101 with screws 9. When mounted at a normal height, the gap between the upper surface of the substrate 101 and the lower surface of the sealing resin 5 is small, about 0.5 mm, and the two come into contact when fastened. In the case of a surface-mounted type, the lower surface of the sealing resin is generally mounted so as to float from the substrate, so that stress is not transmitted to the outer shape of the sealing resin when bending of the substrate occurs. In contrast, in this embodiment, the main terminals 4 and the control terminals 3 have a sufficient elastic deformation width in the height direction as described above, so that the semiconductor package 100 can be mounted so that the height of the heat dissipation surface 5c and the height of the lower surface of the sealing resin 5 from the substrate 101 are high. Even when the heat sink 102 is fixed to the substrate 101 with the screws 9, the lower surface of the sealing resin 5 is kept floating above the substrate 101, so that the stress applied from the substrate 101 to the semiconductor package 100 can be reduced.
[0023] 5 is a side view showing a modified example of the semiconductor device according to the first embodiment. In addition to the semiconductor package 100 of the present embodiment, other devices 103 that require heat dissipation, such as a diode module, may be mounted on the substrate 101 to share the heat sink 102. The other devices 103 are fixed to the heat sink 102 with screws 9. Before the heat sink 102 is attached, the height of the heat dissipation surface 5c of the semiconductor package 100 is set higher than the heat dissipation surface of the other devices 103. This eliminates the need for screws or spacers for the semiconductor package 100, making it possible to reduce mounting costs and material costs.
[0024] Embodiment 2 6 is a side view showing a semiconductor device according to embodiment 2. Folded portions 12 are provided at the bases of the main terminals 4 and the control terminals 3 that protrude laterally from the side surface of the sealing resin 5. The folded portions 12 have a U-shape, S-shape, V-shape, or a concave shape folded vertically.
[0025] In the first embodiment, in order to ensure the height of the semiconductor package, the main terminals 4 and the control terminals 3 protrude laterally, increasing the mounting area on the substrate 101. In contrast, in the present embodiment, the main terminals 4 and the control terminals 3 are provided with folded-back portions 12. Even with the provision of folded-back portions 12, the main terminals 4 and the control terminals 3 do not protrude laterally much, so the mounting area does not increase significantly.
[0026] When the heat sink 102 is attached, if a downward stress is applied to the heat dissipation surface 5c of the sealing resin 5 with the tip of each terminal fixed, the folded portion 12 is elastically deformed. This makes it possible to reduce the mounting area on the substrate 101 and increase the adjustment margin for the mounting height. Also, even if the outer surface of the sealing resin 5 is not horizontal, for example when the substrate 101 is warped, the heat sink 102 can be brought into proper contact with the heat dissipation surface 5c. The other configurations and effects are the same as those of the first embodiment.
[0027] Furthermore, when the folded portion 12 is V-shaped, the angle between the two inclined portions constituting the V-shape is preferably 30 degrees or more. By widening the angle in this way, the main terminal 4 and the control terminal 3 become more easily deformed elastically.
[0028] 7 and 8 are side views showing a first modified example of the semiconductor device according to the second embodiment. The folded portion 12 is provided at a portion where the main terminal 4 and the control terminal 3 extend downward, and has a shape folded back laterally into a U-shape, an S-shape, a V-shape, a concave shape, or the like. This allows the semiconductor package to be mounted while maintaining its height. In addition, the stress applied when attaching the heat sink 102 is unlikely to be applied in the shear direction of the soldering (the horizontal direction in the figure), improving the reliability of the soldering portion. In addition, the mounting area can be further reduced.
[0029] As shown in FIG. 8, two semiconductor packages 100 can be arranged side by side and bonded to a substrate 101 to share a heat sink 102. When the heat sink 102 is pressed against and fixed to the heat dissipation surfaces 5c of the two semiconductor packages 100, the folded portions 12 of the main terminals 4 and the control terminals 3 of the two semiconductor packages 100 are elastically deformed, and the heights of the heat dissipation surfaces 5c of the two semiconductor packages 100 are aligned. Therefore, it is not necessary to align the heights of the heat dissipation surfaces 5c of the two semiconductor packages 100 when bonding to the substrate 101. Even if the gap between the substrate 101 and the heat sink 102 is not uniform, the amount of elastic deformation of the folded portions 12 of each terminal can be adjusted, and the heat sink 102 can be appropriately brought into contact with the heat dissipation surfaces 5c of the two semiconductor packages 100.
[0030] Fig. 9 is a side view showing Modification 2 of the semiconductor device according to the second embodiment. The main terminals 4 and the control terminals 3 have an S-shaped overall shape with folded-back portions 12. Fig. 10 is a side view showing Modification 3 of the semiconductor device according to the third embodiment. The main terminals 4 and the control terminals 3 have a sideways U-shaped overall shape with folded-back portions 12. If the main terminals 4 and the control terminals 3 have such a simple shape, the main terminals 4 and the control terminals 3 can be easily processed.
[0031] Embodiment 3 11 is a top view showing a semiconductor package according to embodiment 3. The width of the main terminal 4 protruding from the second side surface 5b is larger than the width of the control terminal 3 protruding from the first side surface 5a. Therefore, the control terminal 3 has a low elastic modulus and is easily elastically deformed.
[0032] 12 is a side view showing a semiconductor device according to a third embodiment. Both ends of a substrate 101 are attached to a heat sink 102 via spacers 11. At the attachment position, the space between the substrate 101 and the heat sink 102 is ensured by the spacers 11. Meanwhile, the substrate 101 is warped, narrowing the space between the substrate 101 and the heat sink 102 at the center of the substrate 101. The mounting direction of the semiconductor package is set so that the control terminal 3 side is on the side where this space is narrowed. Therefore, the space between the substrate 101 and the heat sink 102 on the control terminal 3 side is narrower than the space between the substrate 101 and the heat sink 102 on the main terminal 4 side.
[0033] Generally, the substrate 101 is warped and not flat, and the mounting planes of the substrate 101 and the heat sink 102 are often not parallel. If the substrate 101 warps significantly, there is a possibility that the contact between the heat dissipation surface 5c of the semiconductor package and the heat sink 102 cannot be properly maintained. Therefore, the direction in which the substrate 101 is likely to warp is determined in advance, and the mounting direction of the semiconductor package is set so that the control terminal 3 faces the direction in which the gap between the substrate 101 and the heat sink 102 narrows. This allows the main terminal 4 and the control terminal 3 to elastically deform in response to the gap difference between the substrate 101 and the heat sink 102, and proper contact between the heat dissipation surface 5c of the semiconductor package and the heat sink 102 can be maintained.
[0034] Moreover, the main terminals 4 and the control terminals 3 may be made of materials with different elastic moduli. For example, the main terminals 4 are made of Fe (iron) and the control terminals 3 are made of Cu (copper). In this case, the main terminals 4 have a higher elastic modulus than the control terminals 3. This combination is not limited to this, and materials with different elastic moduli may be used for the main terminals 4 and the control terminals 3. The mounting direction of the semiconductor package is set so that the terminal side with a lower elastic modulus faces the direction in which the gap between the substrate 101 and the heat sink 102 narrows. This makes it possible to maintain appropriate contact between the heat dissipation surface 5c of the semiconductor package and the heat sink 102 even if the surface of the sealing resin 5 is not horizontal, such as when the substrate 101 is warped.
[0035] In addition, the outer shape of the sealing resin 5 is not firmly fixed with screws or the like. Therefore, when vibrations occur during system operation, the outer shape of the sealing resin 5 resonates, which can cause problems such as damage to the main terminals 4 and control terminals 3 and peeling of soldered parts. Therefore, the control terminals 3 and the main terminals 4 are made to have different shapes. This makes the resonant frequencies of the respective terminals different, making it possible to suppress the overall resonant vibration and prevent problems.
[0036] Embodiment 4 13 is a side view showing a semiconductor device according to embodiment 4. When the heat sink 102 is attached, the main terminals 4 and the control terminals 3 are elastically deformed and approach the surface of the heat sink 102. Therefore, in this embodiment, the heat sink 102 is provided with grooves 13 at locations facing the main terminals 4 and the control terminals 3 of the semiconductor package 100. This makes it possible to ensure a specified insulation distance between the elastically deformed control terminals 3 and main terminals 4 and the metal heat sink 102.
[0037] The semiconductor chips 1a to 1f are not limited to those made of silicon, but may be made of wide band gap semiconductors having a larger band gap than silicon. Wide band gap semiconductors are, for example, silicon carbide, gallium nitride-based materials, or diamond. Semiconductor chips made of such wide band gap semiconductors have high voltage resistance and allowable current density, so they can be miniaturized. By using this miniaturized semiconductor chip, a semiconductor device incorporating this semiconductor chip can also be miniaturized and highly integrated. In addition, since the semiconductor chip has high heat resistance, the heat dissipation fins of the heat sink can be miniaturized, and the water-cooled part can be air-cooled, so the semiconductor device can be further miniaturized. In addition, since the power loss of the semiconductor chip is low and highly efficient, the efficiency of the semiconductor device can be increased. [Explanation of symbols]
[0038] 1a to 1f semiconductor chip, 3 control terminal, 4 main terminal, 5 sealing resin, 5a first side surface, 5b second side surface, 5c heat dissipation surface, 6 substrate bonding surface, 7a, 7b bent portion, 12 folded portion, 13 groove, 101 substrate, 102 heat sink
Claims
1. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has at least two bent portions bent downward; The angle of the bent portion is an obtuse angle, the plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface and having a width greater than that of the control terminal, the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
2. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has at least two bent portions bent downward; The angle of the bent portion is an obtuse angle, the plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface, the control terminal and the main terminal being made of a material having a different elastic modulus; the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
3. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has at least two bent portions bent downward; The angle of the bent portion is an obtuse angle, The plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface, the control terminal and the main terminal having different shapes, the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
4. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has at least two bent portions bent downward; The angle of the bent portion is an obtuse angle, the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; The semiconductor device according to claim 1, wherein the heat sink is provided with grooves at locations facing the terminals of the semiconductor package.
5. 5. The semiconductor device according to claim 1, wherein when a downward stress is applied to the heat dissipation surface of the sealing resin with the tip portion of the terminal fixed, the bent portion elastically deforms.
6. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has a folded portion. the plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface and having a width greater than that of the control terminal, the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
7. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has a folded portion. the plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface, the control terminal and the main terminal being made of a material having a different elastic modulus; the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
8. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; and a heat sink. The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has a folded portion. the plurality of terminals include a control terminal protruding from the first side surface and a main terminal protruding from the second side surface, the control terminal and the main terminal having different shapes; the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; A semiconductor device, characterized in that a gap between the substrate and the heat sink on the side of the control terminal is narrower than a gap between the substrate and the heat sink on the side of the main terminal.
9. A semiconductor package including a semiconductor chip, a plurality of terminals connected to the semiconductor chip, and an insulating sealing resin that seals the semiconductor chip and a portion of the plurality of terminals; A substrate; a heat sink; The upper surface of the sealing resin is a flat heat dissipation surface, the terminals protrude from first and second opposing side surfaces of the sealing resin, a tip end of each terminal has a substrate bonding surface located below a lower surface of the sealing resin; Each terminal is located below the heat dissipation surface and has a folded portion. the substrate is bonded to the substrate bonding surface of the semiconductor package via a bonding material; the heat sink is attached to the heat dissipation surface of the semiconductor package; The semiconductor device according to claim 1, wherein the heat sink is provided with grooves at locations facing the terminals of the semiconductor package.
10. 10. The semiconductor device according to claim 6, wherein the folded portion has a U-shape, an S-shape, a V-shape, or a concave shape.
11. 11. The semiconductor device according to claim 6, wherein when a downward stress is applied to the heat dissipation surface of the sealing resin with the tip of the terminal fixed, the folded portion elastically deforms.
12. 12. The semiconductor device according to claim 6, wherein the folded portion is provided at a base portion of the terminal protruding from the sealing resin, and has a shape folded back in a vertical direction.
13. 13. The semiconductor device according to claim 6, wherein the folded portion is V-shaped, and an angle between two inclined portions constituting the V-shape is 30 degrees or more.
14. 12. The semiconductor device according to claim 6, wherein the folded portion is provided at a portion of the terminal that extends downward, and has a shape folded back in a lateral direction.
15. 12. The semiconductor device according to claim 6, wherein the overall shape of the terminal is an S-shape or a sideways U-shape.
16. 16. The semiconductor device according to claim 1, wherein the semiconductor chip is made of a wide band gap semiconductor.
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