Adhesive sheet for protecting semiconductor elements

Abstract

To provide an adhesive sheet for semiconductor device protection, by which a semiconductor wafer can be protected adequately without causing the decrease in production yield.SOLUTION: An adhesive sheet for semiconductor device protection according to the present invention comprises an adhesive layer and a base material. The adhesive layer has a surface resistivity of 1.0×1011 Ω / sq. or less. When peeling the adhesive sheet for semiconductor device protection after a silicon wafer bonded to the adhesive layer of the adhesive sheet for semiconductor device protection has been left at rest at 50°C for 24 hours, the rate of a content of halogen elements to a content of all elements in a face where the silicon wafer is bonded to the adhesive layer is 0.3 atomic% or less.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an adhesive sheet for protecting a semiconductor element, and more particularly to an adhesive sheet for protecting a semiconductor element used when transporting individual semiconductor elements to a mounting process. [Background technology]

[0002] Semiconductor elements are manufactured by subjecting silicon wafers to a back-grinding process and a dicing process. Since the handling properties of semiconductor elements that have undergone these processes are reduced, they may be transported to a mounting process of semiconductor elements using a semiconductor element protection adhesive sheet for transportation. The semiconductor elements transported using the semiconductor element protection adhesive sheet for transportation are picked up from the protective adhesive sheet and subjected to a mounting process. When the semiconductor elements are picked up from the protective adhesive sheet, peeling static electricity occurs, which causes electrostatic damage to the semiconductor elements and reduces the yield. Therefore, there is an increasing demand for antistatic adhesive sheets in the mounting process of semiconductor elements.

[0003] It is known that an antistatic agent is used to impart antistatic properties to adhesive sheets used in semiconductor processing steps (for example, Patent Document 1 and Patent Document 2). However, a problem may arise in that halogen elements originating from the antistatic agent contained in the adhesive layer migrate to the surface of the semiconductor element. The halogen elements that migrate to the semiconductor element may corrode the semiconductor element. In addition, when a surfactant is used as the antistatic agent, the surfactant may segregate on the surface of the adhesive layer and contaminate the semiconductor element. Therefore, there is a demand for an adhesive sheet for protecting semiconductor elements during transportation that can adequately protect the semiconductor elements during the transportation step and prevent a decrease in the yield of the semiconductor elements due to electrostatic breakdown and contamination of the semiconductor elements. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-174201 A [Patent Document 2] International Publication No. 2018 / 003893 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made to solve the above-mentioned conventional problems, and its object is to provide an adhesive sheet for protecting semiconductor elements that adequately protects semiconductor wafers without reducing yield. [Means for solving the problem]

[0006] The adhesive sheet for protecting a semiconductor element of the present invention includes an adhesive layer and a substrate. The surface resistivity of the adhesive layer is 1.0×10 11 The adhesive layer of the adhesive sheet for protecting semiconductor elements is bonded to a silicon wafer and left to stand at 50°C for 24 hours, and after the adhesive sheet for protecting semiconductor elements is peeled off, the halogen element ratio to the total element content of the surface of the silicon wafer bonded to the adhesive layer is 0.3 atomic% or less. In one embodiment, the adhesive layer comprises an antistatic agent. In one embodiment, the content of the antistatic agent in the composition forming the pressure-sensitive adhesive layer is 2% by weight to 30% by weight. In one embodiment, the antistatic agent is at least one selected from the group consisting of a non-halogen ionic liquid, a conductive polymer, and a conductive carbon material. In one embodiment, the non-halogen ionic liquid is at least one selected from the group consisting of ammonium salts, imidazole salts, pyridinium salts, phosphates, and sulfonates. In one embodiment, the conductive polymer is at least one selected from the group consisting of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonic acid) and polythiophene. In one embodiment, the pressure-sensitive adhesive layer has a thickness of 1 μm to 100 μm. Effect of the Invention

[0007] According to the present invention, it is possible to provide a semiconductor element protection adhesive sheet that properly protects a semiconductor wafer without reducing yield. The semiconductor element protection adhesive sheet of the present invention can prevent contamination of the semiconductor element due to the antistatic agent contained in the adhesive layer and electrostatic damage of the semiconductor element due to peeling electrification. Therefore, it is possible to properly protect the semiconductor element in the transport process and prevent a reduction in yield in the mounting process. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of an adhesive sheet for protecting a semiconductor element according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] A. Overall structure of adhesive sheet for protecting semiconductor elements FIG. 1 is a schematic cross-sectional view of a semiconductor element protective adhesive sheet (hereinafter, also referred to as a protective adhesive sheet) according to one embodiment of the present invention. The protective adhesive sheet 100 has a substrate 10 and an adhesive layer 20 disposed on one surface of the substrate. In one embodiment, the substrate 10 does not have an undercoat layer. The protective adhesive sheet of the present invention can have antistatic properties without having an undercoat layer. The protective adhesive sheet can have any appropriate other layer (not shown). For example, any appropriate layer may be formed between the substrate and the adhesive layer. The protective adhesive sheet may have a separator provided on the outside of the adhesive layer for the purpose of protecting the adhesive layer until it is used.

[0010] In an embodiment of the present invention, the surface resistivity of the pressure-sensitive adhesive layer is 1.0×10 11 When the surface resistivity of the adhesive layer is in the above range, peeling electrification during the mounting process of the semiconductor element can be suppressed, and electrostatic damage to the semiconductor element can be prevented. The surface resistivity of the adhesive layer is preferably 1.0×10 5 Ω / □~1.0×10 11 Ω / □, and more preferably 1.0×108 Ω / □~1.0×10 10 In this specification, the surface resistivity of the pressure-sensitive adhesive layer refers to the surface resistivity measured by the method described in the Examples section below.

[0011] In an embodiment of the present invention, the adhesive layer of the adhesive sheet for protecting a semiconductor element is attached to a silicon wafer and left at 50° C. for 24 hours, and the halogen element ratio to the total element content of the surface of the silicon wafer attached to the adhesive layer after the adhesive sheet for protecting a semiconductor element is 0.3 atomic% or less. When the halogen element ratio to the total element content of the surface of the silicon wafer attached to the adhesive layer after the protective adhesive sheet is peeled off is in the above range, contamination of the semiconductor element by halogen elements derived from the adhesive layer can be prevented. The halogen element ratio to the total element content is preferably 0.2 atomic% to 0 atomic%, more preferably 0.1 atomic% to 0 atomic%. The halogen element ratio to the total element content of the surface of the silicon wafer attached to the adhesive layer after the protective adhesive sheet is peeled off may be 0 atomic%. In this specification, the halogen element ratio to the total element content of the surface of the silicon wafer attached to the adhesive layer after the protective adhesive sheet is peeled off refers to a value measured by an X-ray photoelectron spectroscopy (XPS) by the method described in the Examples below.

[0012] The thickness of the protective adhesive sheet of the present invention can be set to any appropriate thickness. The thickness of the protective adhesive sheet is, for example, 50 μm to 900 μm, more preferably 60 μm to 800 μm, and even more preferably 70 μm to 200 μm. By having the thickness within the above range, the semiconductor wafer can be appropriately supported and the handleability can be maintained. In addition, the transportation in the device can be efficiently performed, and a decrease in the yield can be prevented.

[0013] B. Base material Any suitable substrate is used as the substrate 10. In one embodiment, the substrate does not have an undercoat layer. The protective pressure-sensitive adhesive sheet of the present invention can exhibit antistatic performance without having an undercoat layer. The substrate may be one layer or two or more layers. When the substrate is two or more layers, the substrate is used so that the total thickness of the substrate becomes the thickness of the substrate described below.

[0014] The thickness of the substrate is preferably 50 μm to 200 μm, more preferably 60 μm to 180 μm, and further preferably 70 μm to 180 μm. When the substrate has a thickness within the above range, the semiconductor element can be appropriately supported and the occurrence of warping and / or bending can be prevented.

[0015] The substrate may be made of any suitable resin. Specific examples of the resin constituting the substrate include polyester resins such as polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), and polybutylene naphthalate (PBN), polyolefin resins such as ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer, polyethylene, polypropylene, and ethylene-propylene copolymer, polyvinyl alcohol, polyvinylidene chloride, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, polyvinyl acetate, polyamide, polyimide, cellulose, fluorine resin, polyether, and polystyrene resins such as polystyrene, polycarbonate, polyethersulfone, and polyetheretherketone. Preferably, polyolefin resins such as ethylene-vinyl acetate copolymer, polyethylene, polypropylene, and ethylene-propylene copolymer are used.

[0016] The substrate may further contain other components within a range that does not impair the effects of the present invention. Examples of other components include antioxidants, ultraviolet absorbers, light stabilizers, antistatic agents, etc. The types and amounts of other components can be any appropriate amount depending on the purpose.

[0017] C.Adhesive layer The adhesive layer 20 preferably contains an antistatic agent. The protective adhesive sheet of the present invention can prevent contamination of semiconductor elements with halogen elements even when the adhesive layer contains an antistatic agent. The adhesive layer 20 is formed using any appropriate composition for forming an adhesive layer (hereinafter also referred to as an adhesive layer-forming composition). In one embodiment, the adhesive layer-forming composition contains an adhesive and an antistatic agent.

[0018] In one embodiment, the adhesive layer-forming composition preferably has a smaller content of halogen elements and metal ions. By using an adhesive layer-forming composition having a smaller content of halogen elements and metal ions, contamination of semiconductor elements by components contained in the adhesive layer can be prevented. The content of halogen elements in the adhesive layer-forming composition is, for example, 1000 ppm or less, preferably 500 ppm or less. The content of metallic ions in the adhesive layer-forming composition is, for example, 1000 ppm or less, preferably 10 ppm or less. The content of halogen elements and metal ions contained in the adhesive layer-forming composition can be measured by any appropriate method. For example, the content of metal ions can be measured by using inductively coupled plasma (ICP) analysis and X-ray photoelectron spectroscopy (XPS), and the content of halogen elements contained in the adhesive layer-forming composition can be measured by using X-ray photoelectron spectroscopy (XPS).

[0019] C-1. Adhesive Any suitable adhesive can be used as the adhesive. Examples of the adhesive include adhesives containing acrylic resins, silicone resins, vinyl alkyl ether resins, polyester resins, polyamide resins, and urethane resins as base polymers (adhesive resins). Acrylic resins are preferably used because they are easy to adjust the adhesive strength and have excellent weather resistance.

[0020] Any suitable acrylic resin can be used. For example, an acrylic resin composed of one or more (meth)acrylic acid alkyl esters as a monomer component can be used. Specific examples of (meth)acrylic acid alkyl esters include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, and (meth)acrylate. Examples of the (meth)acrylic acid C1-20 alkyl ester include nonyl acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, nonadecyl (meth)acrylate, and eicosyl (meth)acrylate. Preferably, a (meth)acrylic acid alkyl ester having a linear or branched alkyl group having 4 to 18 carbon atoms is used. In this specification, "(meth)acrylic" refers to acryl and / or methacryl.

[0021] The acrylic resin may contain units corresponding to other monomer components copolymerizable with the above-mentioned (meth)acrylic acid alkyl esters, if necessary, for the purpose of modifying properties such as cohesive strength, heat resistance, and crosslinkability. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride and itanoic anhydride; hydroxyl group-containing monomers such as hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxyhexyl (meth)acrylate, hydroxyoctyl (meth)acrylate, hydroxydecyl (meth)acrylate, hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl methacrylate; sulfonic acid group-containing monomers such as styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth)acryloyloxynaphthalenesulfonic acid; (N-substituted) amide monomers such as N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, and N-methylolpropane(meth)acrylamide; aminoalkyl(meth)acrylate monomers such as aminoethyl(meth)acrylate, N,N-dimethylaminoethyl(meth)acrylate, and t-butylaminoethyl(meth)acrylate; alkoxyalkyl(meth)acrylate monomers such as methoxyethyl(meth)acrylate and ethoxyethyl(meth)acrylate; maleimide monomers such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, and N-phenylmaleimide; itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, and N-laurylitaconimide;succinimide monomers such as N-(meth)acryloyloxymethylene succinimide, N-(meth)acryloyl-6-oxyhexamethylene succinimide, and N-(meth)acryloyl-8-oxyoctamethylene succinimide; vinyl monomers such as vinyl acetate, vinyl propionate, N-vinylpyrrolidone, methylvinylpyrrolidone, vinylpyridine, vinylpiperidone, vinylpyrimidine, vinylpiperazine, vinylpyrazine, vinylpyrrole, vinylimidazole, vinyloxazole, vinylmorpholine, N-vinyl carboxylic acid amides, styrene, α-methylstyrene, and N-vinylcaprolactam; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy group-containing acrylic monomers such as glycidyl (meth)acrylate; polyethylene glycol (meth)acrylate, polypropylene glycol (meth)acrylate, and methoxyethylene glycol (meth)acrylate. Examples of the monomers include glycol-based acrylic ester monomers such as ethanol and methoxypolypropylene glycol (meth)acrylate; acrylic ester monomers having heterocyclic rings and silicon atoms such as tetrahydrofurfuryl (meth)acrylate and silicone (meth)acrylate; polyfunctional monomers such as hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy acrylate, polyester acrylate, and urethane acrylate; olefin-based monomers such as isoprene, butadiene, and isobutylene; and vinyl ether-based monomers such as vinyl ether. These monomer components may be used alone or in combination of two or more.

[0022] In one embodiment, the base polymer preferably does not contain halogen atoms in the polymer skeleton. By using a base polymer that does not contain halogen atoms in the polymer skeleton, halogen contamination of semiconductor elements by the protective pressure-sensitive adhesive sheet can be prevented.

[0023] The base polymer can be obtained by polymerizing the above-mentioned monomer components by any appropriate method. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. The polymerization method for the base polymer can be selected depending on, for example, the antistatic agent to be used.

[0024] Any suitable solvent can be used for the polymerization of the base polymer. In one embodiment, the solvent used for the polymerization is a solvent compatible with the antistatic agent.

[0025] C-2. Antistatic agents As the antistatic agent, any suitable antistatic agent can be used. The antistatic agent preferably does not contain a halogen element. Specifically, the antistatic agent may be a compound that does not contain a halogen atom in the skeleton, or an antistatic agent that does not contain a halogen element as an impurity. As the antistatic agent, at least one selected from the group consisting of a non-halogen ionic liquid, a conductive polymer, and a conductive carbon material can be preferably used.

[0026] The antistatic agent can be used in any appropriate content. For example, the content of the antistatic agent in the composition forming the adhesive layer (adhesive layer-forming composition) is preferably 2% by weight to 30% by weight, more preferably 3% by weight to 30% by weight. When the content of the antistatic agent in the adhesive layer-forming composition is within the above range, peeling electrification when picking up the semiconductor element can be suppressed, and electrostatic damage to the semiconductor element can be prevented.

[0027] C-2-1. Non-halogen ionic liquids In one embodiment, non-halogen ionic liquids can be used as antistatic agents. Ionic liquids refer to salts that are liquid at room temperature. Non-halogen ionic liquids, that is, ionic liquids whose anions and cations do not contain halogen atoms, can be used as antistatic agents. Only one type of non-halogen ionic liquid can be used, or two or more types can be used in combination.

[0028] The cation that can be used is one that does not contain a halogen atom in the skeleton, for example, an organic cation represented by the following general formulas (A) to (E). [ka]

[0029] In the above formula (A), Ra represents a hydrocarbon group having 4 to 20 carbon atoms or a functional group containing a heteroatom other than a halogen atom. Rb and Rc may be the same or different, and each represents a hydrogen atom, a hydrocarbon group having 1 to 16 carbon atoms, or a functional group containing a heteroatom other than a halogen atom. However, when the nitrogen atom contains a double bond, Rc does not exist.

[0030] In the above formula (B), Rd represents a hydrocarbon group having 2 to 20 carbon atoms or a functional group containing a heteroatom other than a halogen atom. Re, Rf and Rg may be the same or different and each represents a hydrogen atom, a hydrocarbon group having 1 to 16 carbon atoms, or a functional group containing a heteroatom other than a halogen atom.

[0031] In the above formula (C), Rh represents a hydrocarbon group having 2 to 20 carbon atoms or a functional group containing a heteroatom other than a halogen atom. Ri, Rj and Rk may be the same or different and each represents a hydrogen atom, a hydrocarbon group having 1 to 16 carbon atoms, or a functional group containing a heteroatom other than a halogen atom.

[0032] In the above formula (D), Z represents a nitrogen atom, a sulfur atom, or a phosphorus atom. Rl, Rm, Rn, and Ro may be the same or different, and each represents a hydrocarbon group having 1 to 20 carbon atoms or a functional group containing a heteroatom other than a halogen atom. However, when Z is a sulfur atom, Ro does not exist.

[0033] In the above formula (E), Rp represents a hydrocarbon group having 1 to 18 carbon atoms or a functional group containing a heteroatom other than a halogen atom.

[0034] Examples of the cation represented by formula (A) include pyridinium cation, pyrrolidinium cation, piperidinium cation, cation having a pyrroline skeleton, and cation having a pyrrole skeleton. Examples of the cation represented by formula (B) include imidazolium cation, tetrahydropyrimidinium cation, and dihydropyrimidinium cation. Examples of the cation represented by formula (C) include pyrazolium cation and pyrazolinium cation. Examples of the cation represented by formula (D) include cations in which Rl, Rm, Rn, and Ro are the same or different and are all alkyl groups having 1 to 20 carbon atoms. Specifically, examples of the cation include tetraalkylammonium cation, trialkylsulfonium cation, and tetraalkylphosphonium cation. Examples of the cation represented by formula (E) include sulfonium cations in which Rp is any of alkyl groups having 1 to 18 carbon atoms. Details of such cations are described, for example, in JP 2020-125436 A. The entire disclosure of this publication is incorporated herein by reference.

[0035] The anion may be an anion that does not contain a halogen atom in the skeleton, such as an organic anion including a carboxylate anion, an N-acylamino acid ion, an acidic amino acid anion, a neutral amino acid anion, an alkyl sulfate anion, and a phenol anion.

[0036] Specific examples of carboxylate anions include acetate ion, decanoate ion, 2-pyrrolidone-5-carboxylate ion, formate ion, α-lipoic acid ion, lactate ion, tartrate ion, hippurate ion, and N-methylhippurate ion.

[0037] Specific examples of N-acylamino acid ions include N-benzoylalanine ion, N-acetylphenylalanine ion, aspartic acid ion, glycine ion, and N-acetylglycine ion.

[0038] Specific examples of acidic amino acid anions include aspartic acid ion, glutamic acid ion, etc. Specific examples of neutral amino acid anions include glycine ion, alanine ion, phenylalanine ion, etc.

[0039] Specific examples of alkyl sulfate anions include methanesulfonate ion, etc. Specific examples of phenol anions include phenol ion, 2-methoxyphenol ion, 2,6-di-tert-butylphenol ion, etc.

[0040] When a non-halogen ionic liquid is used as the antistatic agent, the content of the antistatic agent is preferably 6 to 50 parts by weight, more preferably 6 to 40 parts by weight, and even more preferably 6 to 20 parts by weight, relative to 100 parts by weight of the base polymer. When the content of the non-halogen ionic liquid used as the antistatic agent is within the above range, peeling electrification when picking up the semiconductor element is suppressed, and electrostatic damage to the semiconductor element can be prevented.

[0041] In one embodiment, when a non-halogen ionic liquid is used as the antistatic agent, a polymer obtained by solution polymerization of a monomer component can be suitably used as the base polymer. By using the base polymer obtained by solution polymerization, the base polymer and the antistatic agent can be mixed more uniformly, and as a result, a pressure-sensitive adhesive layer having excellent adhesive performance and antistatic performance can be formed.

[0042] The solvent used in the solution polymerization may be any suitable solvent that dissolves the non-halogen ionic liquid used, such as ethyl acetate, toluene, and methyl ethyl ketone.

[0043] C-2-2. Conductive polymer Any suitable conductive polymer can be used as the conductive polymer. Examples include poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline, polythiophene, polydiacetylene, etc. Poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonic acid) (PEDOT-PSS) may also be used. PEDOT-PSS and polythiophene are preferably used. Only one type of conductive polymer may be used, or two or more types may be used in combination.

[0044] When a conductive polymer is used as the antistatic agent, the content of the antistatic agent is preferably 1 to 10 parts by weight, more preferably 2 to 8 parts by weight, and even more preferably 3 to 7 parts by weight, relative to 100 parts by weight of the base polymer. When the content of the conductive polymer used as the antistatic agent is within the above range, peeling electrification when picking up the semiconductor element is suppressed, and electrostatic damage to the semiconductor element can be prevented.

[0045] In one embodiment, when a conductive polymer is used as the antistatic agent, a polymer obtained by emulsion polymerization of a monomer component can be suitably used as the base polymer. By using a base polymer obtained by emulsion polymerization, the base polymer and the conductive polymer as the antistatic agent can be mixed more uniformly. As a result, a pressure-sensitive adhesive layer having excellent adhesion and antistatic properties can be formed.

[0046] As the solvent used in the emulsion polymerization, any appropriate solvent can be used depending on the conductive polymer used, for example, water.

[0047] C-2-3. Conductive carbon material Any suitable conductive carbon material can be used as the conductive carbon material. For example, carbon nanotubes, graphene, etc. Only one conductive carbon material may be used, or two or more conductive carbon materials may be used in combination.

[0048] When a conductive carbon material is used as the antistatic agent, the content of the antistatic agent is preferably 1 to 10 parts by weight, more preferably 2 to 8 parts by weight, and even more preferably 3 to 6 parts by weight, relative to 100 parts by weight of the base polymer. When the content of the conductive carbon material used as the antistatic agent is within the above range, peeling electrification when picking up a semiconductor element can be suppressed.

[0049] In one embodiment, when a conductive carbon material is used as an antistatic agent, a polymer obtained by solution polymerization of a monomer component can be suitably used as a base polymer. By using a base polymer obtained by solution polymerization, the base polymer and the conductive carbon material as an antistatic agent can be mixed more uniformly. As a result, a pressure-sensitive adhesive layer having excellent adhesive performance and antistatic performance can be formed.

[0050] The solvent used in the solution polymerization may be any appropriate solvent as long as the conductive carbon material used can be dispersed therein, for example, ethyl acetate, toluene, etc.

[0051] C-3.Additives The pressure-sensitive adhesive layer-forming composition may contain any suitable additives, such as crosslinkers, light release agents, catalysts (e.g., platinum catalysts, zirconium catalysts), tackifiers, plasticizers, pigments, dyes, fillers, antioxidants, UV absorbers, light stabilizers, release regulators, softeners, flame retardants, solvents, and the like.

[0052] The thickness of the pressure-sensitive adhesive layer can be set to any appropriate value. The thickness of the pressure-sensitive adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 20 μm, and even more preferably 1 μm to 10 μm. When the thickness of the pressure-sensitive adhesive layer is within the above range, the pressure-sensitive adhesive layer can exert sufficient adhesive strength to the adherend.

[0053] D. Manufacturing method of semiconductor element protection adhesive sheet The adhesive sheet for protecting a semiconductor element can be manufactured by any suitable method. For example, it can be obtained by a method of applying an adhesive solution (adhesive layer-forming composition) to a separator, drying the adhesive layer on the separator, and then laminating the adhesive layer on a substrate. Alternatively, the adhesive layer-forming composition can be applied to a substrate and dried to obtain an adhesive sheet for protecting a semiconductor element. As a method for applying the adhesive layer-forming composition, various methods such as bar coater application, air knife application, gravure application, gravure reverse application, reverse roll application, lip application, die application, dip application, offset printing, flexographic printing, and screen printing can be adopted. As a drying method, any suitable method can be adopted.

[0054] E. Applications of adhesive sheets for protecting semiconductor elements The adhesive sheet for protecting a semiconductor element can be suitably used when transporting a semiconductor element to a mounting process. As described above, the adhesive sheet for protecting a semiconductor element can prevent contamination of the semiconductor element by components derived from the adhesive layer. Furthermore, it can prevent electrostatic damage caused by peeling charge that occurs when picking up a semiconductor element. Therefore, it can prevent a decrease in yield in the manufacturing method of a semiconductor element. EXAMPLES

[0055] The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples. In the examples, "parts" and "%" are by weight unless otherwise specified.

[0056] [Production Example 1] Preparation of base polymer 1 (HAOMA 75) In a 500mL three-neck flask-type reactor equipped with a thermometer, a stirrer, a nitrogen inlet tube, and a reflux condenser, 75 parts of 2-ethylhexyl acrylate, 25 parts of N-acryloylmorpholine, 3 parts of acrylic acid, 0.2 parts of 2,2'-azobisisobutyronitrile, 0.1 parts of hydroxyethyl acrylate, and 200 parts of ethyl acetate were mixed and charged so that the total weight was 200g. Next, the mixture was stirred while introducing nitrogen gas for about 1 hour, and the air inside was replaced with nitrogen. After that, the inside temperature was raised to 60°C, and polymerization was carried out by maintaining this state for about 6 hours to obtain a polymer solution. The weight average molecular weight of this polymer measured by gel permeation chromatography (GPC) was 1.2 million.

[0057] [Production Example 2] Preparation of Base Polymer 2 (H624) An acrylic acid / methacrylic acid copolymer, "Leocoat H-624" (manufactured by Toray Coatex Co., Ltd., 64 parts butyl acrylate, 33 parts methyl methacrylate, 3 parts hydroxyethyl acrylate) was used as the base polymer (adhesive). The weight average molecular weight of this polymer was 320,000.

[0058] [Example 1] An adhesive layer-forming composition was obtained by mixing 100 parts by weight of base polymer 1, 4 parts by weight of a crosslinking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., product name "Coronate L"), 2 parts by weight of a light release agent (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., product name "Epane 710"), and 7 parts by weight of an antistatic agent 1 (manufactured by Nippon Nyukazai Co., Ltd., product name "Aminoion AS100", a halogen-free ionic liquid). The obtained adhesive layer-forming composition was applied to a three-layer polyolefin substrate (polyolefin / polypropylene / polyolefin, thickness: 100 μm) to a dry thickness of 105 μm, and then dried to obtain an adhesive sheet for protecting a semiconductor element.

[0059] [Example 2] An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Example 1, except that the content of antistatic agent 1 was 10 parts by weight.

[0060] [Example 3] An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Example 1, except that the content of antistatic agent 1 was 30 parts by weight.

[0061] [Example 4] An adhesive sheet for protecting semiconductor elements was obtained in the same manner as in Example 1, except that base polymer 2 was used, no light release agent was added, and antistatic agent 1 was replaced with 3 parts by weight of antistatic agent 2 (manufactured by Chukyo Yushi Co., Ltd., product name "W-337", conductive polymer (PEDOT-PSS)).

[0062] Comparative Example 1 An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Example 1, except that the content of antistatic layer 1 in Example 1 was changed to 5 parts by weight.

[0063] Comparative Example 2 An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Example 4, except that antistatic agent 3 (manufactured by Nippon Carlit Co., Ltd., product name "CIL-312", a halogen-containing ionic liquid) was used instead of antistatic agent 2.

[0064] Comparative Example 3 An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Comparative Example 2, except that the content of antistatic agent 3 was 10 parts by weight.

[0065] Comparative Example 4 An adhesive sheet for protecting a semiconductor element was obtained in the same manner as in Example 4, except that antistatic agent 4 (manufactured by Dai-ichi Kogyo Seiyaku Co., Ltd., product name "Elexcel AS-110", halogen-containing ionic liquid) was used instead of antistatic agent 2.

[0066] Comparative Example 5 An attempt was made to prepare an adhesive sheet for protecting a semiconductor element in the same manner as in Example 1, except that 3 parts by weight of antistatic agent 2 was used instead of antistatic agent 1. However, the base polymer and the antistatic agent could not be mixed homogeneously, and an adhesive layer could not be formed using the adhesive layer-forming composition.

[0067] <Evaluation> The following evaluations were carried out using the adhesive sheets for protecting a semiconductor element and the adhesive layer-forming compositions obtained in the Examples and Comparative Examples. The results are shown in Table 1. 1.Surface resistivity The surface resistance of the adhesive layer was measured according to JIS K 6911. Specifically, a probe was pressed against the adhesive layer of the obtained adhesive sheet for protecting a semiconductor element, and a stable value was read after 30 seconds. The measurement was performed under the following measurement conditions. <Measurement conditions> Resistance meter: Hirester Probe: URS Temperature: 23±2℃ Humidity: 50±5%RH

[0068] 2. Silicon wafer surface halogen element ratio The adhesive sheet for protecting a semiconductor element obtained in the examples or comparative examples was cut into a strip of 20 mm in width and 50 mm in length with a cutter knife to prepare a sample piece. <100> The adhesive layer of the above sample piece from which the separator had been peeled off was brought into contact with a 2 kg roller (2.5-3.5" x 4 inch diameter) and the roller was moved back and forth once to attach the adhesive sheet for protecting a semiconductor element to the silicon wafer. Thereafter, the sample was left to stand for 24 hours in an atmosphere of 50°C without load. Next, the sample in which the adhesive sheet for protecting a semiconductor element and the silicon wafer were attached was returned to room temperature, and the adhesive sheet for protecting a semiconductor element was peeled off from the silicon wafer. Elemental analysis (qualitative analysis) of the wafer surface was performed by wide scanning with XPS on the surface of the silicon wafer that had been attached to the adhesive layer. Next, narrow analysis was performed on the elements detected by the wide scanning, and the content ratio of halogen elements to the total element content was calculated. The measurement was performed under the following conditions. <Measurement conditions> XPS: Made by ULVAC-PHI, Quantum 2000 X-ray source: Monochrome Al Kα X-ray Setting: 200μmφ "15kV, 30W" Photoelectron take-off angle: 45° to the sample surface Neutralization conditions: Use of neutralization gun and Ar ion gun (neutralization mode) Pasting speed: 3mm / sec Cutter temperature: 180℃ Cutting speed: 200mm / sec Cutter blade: Art knife replacement blade XB10 (OLFA)

[0069] 3.Compatibility The materials for the pressure-sensitive adhesive layer-forming composition were mixed, and the state of the composition was visually confirmed. Those in which the materials were uniformly mixed were marked with an ◯, and those in which the materials were not uniform or could not be mixed were marked with an ×.

[0070] [Table 1] [Industrial Applicability]

[0071] The pressure-sensitive adhesive sheet for protecting a semiconductor element of the present invention can be suitably used for protecting a semiconductor element during the transportation process of the semiconductor element. [Explanation of symbols]

[0072] 10 Base material 20 Adhesive layer 100 Adhesive sheet for protecting semiconductor elements

Claims

1. A pressure-sensitive adhesive sheet for protecting a semiconductor element, comprising a pressure-sensitive adhesive layer and a substrate, the pressure-sensitive adhesive layer contains an antistatic agent, the antistatic agent being at least one selected from the group consisting of a non-halogen ionic liquid and a conductive polymer; the content of the antistatic agent in the composition forming the pressure-sensitive adhesive layer is 2% by weight to 30% by weight, The surface resistivity of the pressure-sensitive adhesive layer is 1.0×10 １１ Ω / □ or less, The adhesive layer of the adhesive sheet for protecting a semiconductor element is laminated to a silicon wafer and left to stand at 50°C for 24 hours, and then the adhesive sheet for protecting a semiconductor element is peeled off, after which the halogen element ratio to the total element content of the surface of the silicon wafer laminated to the adhesive layer is 0.3 atomic % or less.

2. 2 . The adhesive sheet for protecting a semiconductor element according to claim 1 , wherein the non-halogen ionic liquid is at least one selected from the group consisting of ammonium salts, imidazole salts, pyridinium salts, phosphates, and sulfonates.

3. 2. The semiconductor element protecting pressure-sensitive adhesive sheet according to claim 1, wherein the conductive polymer is at least one selected from the group consisting of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonic acid) and polythiophene.

4. 4. The semiconductor element protecting pressure-sensitive adhesive sheet according to claim 1, wherein the pressure-sensitive adhesive layer has a thickness of 1 μm to 100 μm.

Images