Electronic device, manufacturing method for electronic device, and electronic equipment

By forming insulating films with through holes and island-shaped regions on graphene, the method addresses high contact resistance issues, enhancing the performance of graphene-based electronic devices.

JP7610103B2Active Publication Date: 2025-01-08FUJITSU LTD
View PDF 11 Cites 0 Cited by

Patent Information

Application Number
JP2021011698
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-01-28
Publication Date
2025-01-08
Estimated Expiration
2041-01-28

Smart Images

  • Figure 0007610103000001
    Figure 0007610103000001
  • Figure 0007610103000002
    Figure 0007610103000002
  • Figure 0007610103000003
    Figure 0007610103000003
Patent Text Reader

Abstract

To realize an electronic device having a connection between graphene and an electrode while suppressing an increase in contact resistance.SOLUTION: An electronic device 1A includes a graphene 20 provided on the surface 10a of a substrate 10, electrodes 30 and 40 provided in areas 21 and 22 of the surface 20a and covering the areas 21 and 22, and an island-shaped insulating film 50 provided in an area 23 adjacent to the areas 21 and 22 and covering the area 23. The electronic device 1A covers the graphene 20 provided on the substrate 10 with the insulating film 50, forms openings leading to the areas 21 and 22, forms the electrodes 30 and 40 thereon, and then processes the insulating film 50 into an island shape to form the graphene 20 outside the electrodes 30 and 40 and the insulating film 50 by etching. This prevents the graphene 20 from coming into contact with the resist, prevents a resist residue from being interposed between the graphene 20 and the electrodes 30 and 40, and prevents the contact resistance between them from increasing.SELECTED DRAWING: Figure 2
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Pattern forming method for nanocarbon material, semiconductor device, and manufacturing method therefor

    JP2005347378A

  • Semiconductor device and method of manufacturing the same

    JP2009302388A

  • Graphene based field effect transistor

    JP2014204122A

  • Silicon carbide waveguide element

    JP2015069127A

  • Electronic apparatus and method for manufacturing the same

    JP2017152644A