Magnetic sensor and magnetic measurement method

Abstract

The present invention provides a magnetic sensor and a magnetic measurement method capable of measuring a small magnetic field with high accuracy. [Solution] A magnetic sensor 1 includes a variable magnetic field detection unit 100a having a first magnetic body 31 that is magnetized by a measurement magnetic field in a first direction (X direction), a magnetic detection element 10a that is located on the X1 side of a first end 311, which is an end of the first magnetic body 31 on one side (X1 side) in the first direction, and has a sensitivity axis along the first direction, a magnetic state variable member 40 that is located on the X1 side of the first end 311 of the first magnetic body 31 and can be in a first state and a second state in which the magnetic states including at least one of effective permeability and magnetization direction are different, and a magnetic state modulation member 20 that changes the magnetic state of the magnetic state variable member 40, wherein the magnetic state modulation member 20 has an antiferromagnetic portion made of antiferromagnetic material, and the magnetization of the magnetic state variable member 40 in the first state or the second state is affected by exchange coupling between the antiferromagnetic portion and the magnetic state variable member 40.

Description

[Technical field]

[0001] The present invention relates to a magnetic sensor including a magnetoresistive element and a magnetic measurement method. [Background technology]

[0002] Some magnetic sensors that detect and measure magnetic fields are equipped with a magnetoresistance effect element that uses the GMR (giant magnetoresistance) effect or the TMR (tunneling magnetoresistance) effect. The magnetoresistance effect element in these magnetic sensors has a structure in which a fixed magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer are laminated in this order. In the magnetoresistance effect element, when an external magnetic field to be measured is applied, the magnetization direction of the free magnetic layer changes, and a resistance change occurs according to the angle between the magnetization direction of the free magnetic layer and the magnetization direction of the fixed magnetic layer. A magnetic sensor equipped with a magnetoresistance effect element can detect a magnetic field using the resistance change of the magnetoresistance effect element.

[0003] Magnetic sensors equipped with magnetoresistance effect elements have 1 / f noise that cannot be removed by filters. 1 / f noise is inversely proportional to frequency and becomes larger as the frequency decreases, so it can be an obstacle to high-precision measurements. For this reason, various methods are used to remove 1 / f noise.

[0004] Patent Document 1 discloses an even-function magnetic sensor that removes 1 / f noise by taking the difference between the output when a bias magnetic field is applied in a certain direction (+X direction) and the output when a bias magnetic field is applied in the opposite direction (-X direction).

[0005] Patent Document 2 discloses a measuring device that, when measuring the Hall electromotive force of a semiconductor sample, shifts the frequency band of the voltage difference Vm to the lower frequency side in order to remove noise caused by a Schottky barrier that occurs between an electrode and a sample, thereby removing the frequency band of the voltage difference Vm that is significantly affected by 1 / f noise.

[0006] Patent document 3 discloses a magnetic field sensing device that samples bridge signals at a first current and a second current by switching between two sample holds, and determines the value of the magnetic field from the difference between the sampled first and second bridge signals.

[0007] Patent Document 4 discloses a sensor device that uses a modulator to switch the positive and negative sides of a sensor signal and obtain a difference between the modulated signals in order to remove 1 / f noise from the output signal. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2018-115972 A [Patent Document 2] JP 2020-148727 A [Patent Document 3] Special Publication No. 2012-518788 [Patent Document 4] Special Publication No. 2009-544004 Summary of the Invention [Problem to be solved by the invention]

[0009] A magnetic sensor equipped with a magnetoresistance effect element has a problem in that 1 / f noise in the low frequency range reduces the detection accuracy of the magnetic sensor, and various devices and methods have been proposed to solve this problem. The object of the present invention is to provide a magnetic sensor equipped with a magnetoresistance effect element and a magnetic measurement method that can remove 1 / f noise using a configuration different from the conventional one and measure small magnetic fields with high accuracy. [Means for solving the problem]

[0010] In one aspect, the present invention is a magnetic sensor characterized by comprising a variable magnetic field detection unit having: a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on one side of the first direction relative to a first end portion of the first magnetic body, which is an end portion on one side of the first direction in the first direction, and has a sensitivity axis along the first direction; a magnetic state variable member that is located on the one side of the first direction relative to the first end portion of the first magnetic body, and can take a first state and a second state in which the magnetic states differ including at least one of effective permeability and magnetization direction; and a magnetic state modulation member that changes the magnetic state of the magnetic state variable member.

[0011] In such a magnetic sensor, by using two outputs from the magnetic field detection unit when the magnetic state variable member is in different states, a signal with 1 / f noise removed can be obtained when measuring the measurement magnetic field, which is the external magnetic field to be measured.

[0012] The magnetic sensor may further include a magnetic field calculation unit that calculates the measured magnetic field based on a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. The magnetic field calculation unit can calculate a signal from which 1 / f noise has been removed.

[0013] In the above magnetic sensor, the effective permeability μ2 in the first direction of the magnetic state changeable member in the second state may be higher than the effective permeability μ1 in the first direction of the magnetic state changeable member in the first state, and may also be higher than the permeability μ0 in the first direction of a first material located between the first magnetic body and the magnetic detection element.

[0014] In this way, since the effective magnetic permeability of the magnetic state changeable member in the second state is higher than that of the surrounding magnetic permeability, the magnetic flux based on the measured magnetic field, i.e., the magnetic flux of the measured magnetic field and the magnetic flux formed when the first magnetic body is magnetized by the measured magnetic field, tend to concentrate in the magnetic state changeable member. As a result, the density of the magnetic flux reaching the magnetically sensitive portion of the magnetic detector element when the magnetic state changeable member is in the second state tends to differ from the density of the magnetic flux reaching the magnetically sensitive portion of the magnetic detector element when the magnetic state changeable member is in the first state.

[0015] In one embodiment (first embodiment) of the above-mentioned magnetic sensor, the variable magnetic field detection unit may have a non-magnetic member between the magnetic detector element and the magnetic state variable member, and the magnetic sensing portion of the magnetic detector element may be magnetically uncoupled from the magnetic state variable member.

[0016] When the magnetic sensing part of the magnetic detector element and the magnetic state variable member are magnetically uncoupled, in the second state in which the magnetic state variable member is more likely to collect magnetic flux based on the measured magnetic field, the magnetic flux based on the measured magnetic field is less likely to reach the magnetic sensing part of the magnetic detector element.

[0017] In another embodiment (second embodiment) of the magnetic sensor described above, the magnetic sensing portion of the magnetic detector element may be magnetically coupled to the magnetic state variable member.

[0018] When the magnetic sensing portion of the magnetic detector element and the magnetic state variable member are magnetically coupled, in the second state in which the magnetic state variable member is more likely to collect magnetic flux based on the measured magnetic field, the magnetic flux based on the measured magnetic field also more easily reaches the magnetic sensing portion of the magnetic detector element.

[0019] In the magnetic sensor including the magnetic detector element and the magnetic state variable member, the magnetic detector element and the magnetic state variable member may be aligned in a second direction perpendicular to the first direction. In this case, the magnetic state variable member may have a portion closer to the first magnetic body in the first direction than the detection center of the magnetic detector element. The center of the magnetic state variable member in the first direction and the detection center of the magnetic detector element may be at the same position in the first direction, and the length of the magnetic state variable member in the first direction may be longer than the length of the magnetic detector element in the first direction. The length of the first magnetic body in the first direction may be longer than the length in the second direction.

[0020] The variable magnetic field detection unit of the magnetic sensor may further include a second magnetic body that is distal in the first direction from the magnetic detection element when viewed from the first end.

[0021] By positioning the magnetic detector element between the first magnetic body and the second magnetic body in the first direction, the magnetic flux based on the measured magnetic field can be made to efficiently reach the magnetic detector element.

[0022] In this case, the magnetic state variable member may be arranged so as to be magnetically coupled to the first magnetic body and the second magnetic body in the second state. In this case, the measurement magnetic field passes preferentially through a portion that is magnetically coupled to the first magnetic body, the magnetic state variable member, and the second magnetic body, so that the difference in magnetic flux density reaching the magnetic sensing portion of the magnetic detector element can be made larger compared to when the magnetic state variable member is not magnetically coupled to the first magnetic body or the second magnetic body.

[0023] In the magnetic sensor of the first embodiment or the magnetic sensor of the second embodiment, the magnetic state modulation member and the magnetic state variable member may form a magnetic control body stacked in a second direction perpendicular to the first direction, and the magnetic control body and the magnetic detector element may be arranged side by side in the second direction. In this case, the magnetic state modulation member may have a spin torque generation unit that imparts a spin orbit torque to the magnetic state variable member when current is applied, and the magnetic state of the magnetic state variable member when current is applied may differ from the magnetic state when current is not applied based on the spin orbit torque from the spin torque generation unit.

[0024] By changing the magnetic state of the magnetic state variable component using spin-orbit torque, it is possible to increase the degree of difference between the magnetic states of the first state and the second state and to facilitate switching between the states.

[0025] In a specific example (Type A) of using the above spin orbit torque, the variable magnetic field detection unit may have a bias magnetic field source which magnetizes the magnetic state variable member along the second direction to such an extent that the magnetization does not rotate due to the measurement magnetic field when the magnetic state modulation member is in a non-energized state. In this case, the magnetic state variable member is in the first state when the magnetic state modulation member is in a non-energized state, and the magnetic state variable member is in the second state when the magnetic state modulation member is in a conductive state and a current flows in an in-plane direction of a first surface having a normal line along the second direction, and in the second state, the magnetic state variable member may be magnetized in a direction opposite to the direction of the current flow to such an extent that the magnetization can rotate in the in-plane direction of the first surface due to a magnetic field based on the measurement magnetic field upon receiving the spin orbit torque.

[0026] In the first state, the magnetization direction of the magnetic state variable member is fixed by the bias magnetic field, so the magnetic field based on the measured magnetic field is less likely to concentrate on the magnetic state variable member. In contrast, in the second state, the magnetic state variable member is magnetized by the magnetic flux based on the measured magnetic field, so the magnetic flux based on the measured magnetic field concentrates on the magnetization state variable member. Therefore, the magnetic flux density that reaches the magnetic detector element located around the magnetic state variable member differs between the first state and the second state.

[0027] In this case, in the second state, the current flowing through the magnetic state modulation member may be along a third direction that is an in-plane direction of the first surface and perpendicular to the first direction, whereby hysteresis may be reduced.

[0028] In the specific example of Type A, the form of the bias magnetic field source is not limited. The magnetic state modulating member may have an antiferromagnetic part made of antiferromagnetic material, and the exchange coupling between the antiferromagnetic part and the magnetic state variable member may be the bias magnetic field source. Alternatively, the bias magnetic field source may include at least one of a coil that generates an induced magnetic field when energized and a permanent magnet, and in this case, the bias magnetic field source may be laminated on the magnetic control body.

[0029] In another specific example (Type B) of using the above-mentioned spin orbit torque, when the magnetic state modulation member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in a third direction perpendicular to the first direction and the second direction by a magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state, and when the magnetic state modulation member is in a non-energized state, the magnetic state variable member is in the second state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction by the magnetic flux based on the measured magnetic field than in the first state.

[0030] In the first state, the magnetization direction of the magnetic state variable member is fixed based on the spin orbit torque, so the magnetic field based on the measured magnetic field is less likely to concentrate on the magnetic state variable member. In contrast, in the second state, the magnetic state variable member is magnetized by the magnetic flux based on the measured magnetic field, so the magnetic flux based on the measured magnetic field concentrates on the magnetization state variable member. Therefore, the magnetic flux density reaching the magnetic detector element located around the magnetic state variable member differs between the first state and the second state.

[0031] In a specific example of Type B, the variable magnetic field detection unit may have a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member. The bias magnetic field source may take various forms, as in the specific example of Type A. In this case, the bias magnetic field that the magnetic state variable member receives in the second state is aligned along an in-plane direction of a first surface having a normal line aligned with the second direction, and may be of such a degree that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measurement magnetic field.

[0032] In the second state, a bias magnetic field is applied to the magnetic state changeable member, thereby reducing hysteresis.

[0033] The bias magnetic field is oriented along a third direction perpendicular to the first direction and the second direction, whereby reduction of hysteresis is realized more stably.

[0034] In another specific example (Type C) of using the above-mentioned spin orbit torque, when the magnetic state modulation member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in the first direction and the second direction by a magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state, and when the magnetic state modulation member is in a non-energized state, the magnetic state variable member is in the second state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction by the magnetic flux based on the measured magnetic field than in the first state.

[0035] In the first state, the magnetization direction of the magnetic state variable member is fixed based on the spin orbit torque, so the magnetic field based on the measured magnetic field is less likely to concentrate on the magnetic state variable member. In contrast, in the second state, the magnetic state variable member is magnetized by the magnetic flux based on the measured magnetic field, so the magnetic flux based on the measured magnetic field concentrates on the magnetization state variable member. Therefore, the magnetic flux density reaching the magnetic detector element located around the magnetic state variable member differs between the first state and the second state.

[0036] In a specific example of Type C, the variable magnetic field detection unit may have a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member. In this case, the form of the bias magnetic field source is the same as that of the specific example of Type A. The application direction and strength of the bias magnetic field are the same as those of the specific example of Type B. Specifically, the bias magnetic field may be along an in-plane direction of a first surface having a normal line along the second direction, to the extent that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measurement magnetic field, or along a third direction perpendicular to the first direction and the second direction.

[0037] In another aspect, the present invention provides a magnetic measurement method using a magnetic sensor including a variable magnetic field detection unit having a first magnetic body that is magnetized by a measurement magnetic field in a first direction, a magnetic detector element that is located on one side of the first direction relative to a first end portion of the first magnetic body, which is an end portion on one side of the first direction in the first direction, and has a sensitivity axis along the first direction, a magnetic state variable member that is located on the one side of the first end portion of the first magnetic body in the first direction and can take a first state and a second state in which the magnetic states include at least one of effective permeability and magnetization direction, and a magnetic state modulation member that changes the magnetic state of the magnetic state variable member, and a magnetic field calculation unit that calculates the measurement magnetic field from a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. This magnetic measurement method includes a first measurement step of setting the magnetic state variable member to the first state and obtaining the first output when the measurement magnetic field is applied, a second measurement step of setting the magnetic state variable member to the second state and obtaining the second output when the measurement magnetic field is applied, and a magnetic field calculation step of calculating the measurement magnetic field from the first output and the second output in the magnetic field calculation unit.

[0038] A measured magnetic field is calculated in the magnetic field calculation step based on the first output acquired in the first measurement step and the second output acquired in the second measurement step, thereby obtaining a measured magnetic field from which the 1 / f noise of the magnetoresistance effect element is removed. For example, the 1 / f noise can be removed from the first output by using the difference between the first output and the second output in the magnetic field calculation step. Effect of the Invention

[0039] According to the present invention, since 1 / f noise can be removed from a measured magnetic field, it is possible to provide a magnetic sensor and a magnetic measurement method having high magnetic resolution and capable of measuring a small magnetic field with high accuracy. [Brief description of the drawings]

[0040] [Figure 1] 1 is a block diagram of a magnetic sensor according to an embodiment of the present invention; [Diagram 2] 3 is an explanatory diagram of a magnetic field detection unit included in the magnetic sensor according to the embodiment of the present invention. FIG. [Figure 3A] 1A and 1B are diagrams illustrating a variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention (the magnetic state of the magnetic state variable member is in a first state). [Figure 3B] 3A to 3C are diagrams illustrating a variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention (the magnetic state of the magnetic state variable member is in a second state). [Figure 4] 4 is a flowchart illustrating a magnetic measurement method using the magnetic sensor according to the first embodiment of the present invention. [Diagram 5] 3A to 3C are explanatory diagrams of a suitable example of a variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention. [Figure 6] 5A to 5C are explanatory diagrams illustrating another example of the preferred embodiment of the variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention. [Figure 7] 5A to 5C are explanatory diagrams of another example of a suitable variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention. [Figure 8] 5A to 5C are explanatory diagrams of modified examples of the variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention. [Figure 9] 13 is a diagram illustrating a variable magnetic field detection unit included in a magnetic sensor according to a second embodiment of the present invention (the magnetic state of the magnetic state variable member is in a second state). FIG. [Figure 10] 13A to 13C are diagrams illustrating a preferred example of a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to the second embodiment of the present invention. [Figure 11A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 1-1) having a variable magnetic field detection unit of Type A and a configuration of the first embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically uncoupled). [Figure 11B]10 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to Example 1-1. FIG. [Figure 12A] 10 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-1. FIG. [Figure 12B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-1. FIG. [Figure 13A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 1-2) having a variable magnetic field detection unit of Type A and a configuration of the second embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically coupled). [Figure 13B] FIG. 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to Example 1-2. [Figure 14A] 13 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-2. FIG. [Figure 14B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-2. FIG. [Figure 15A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 2-1) having a variable magnetic field detection unit of Type B and a configuration of the first embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically uncoupled). [Figure 15B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to variable magnetic field detection unit example 2-1. FIG. [Figure 16A]13 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 2-1. FIG. [Figure 16B] 2A and 2B are diagrams illustrating a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 2-1. [Figure 17A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 2-2) having a variable magnetic field detection unit of Type B and a configuration of the second embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically coupled). [Figure 17B] FIG. 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to Example 2-2. [Figure 18A] 21 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 2-2. FIG. [Figure 18B] 21 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 2-2. FIG. [Figure 19A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 3-1) in which the variable magnetic field detection unit is Type C and has the configuration of the first embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically uncoupled). [Figure 19B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to Example 3-1. FIG. [Figure 20A] 13 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 3-1. FIG. [Figure 20B]13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 3-1. FIG. [Figure 21A] This figure explains the state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) provided in a magnetic sensor of an example (Example 3-2) in which the variable magnetic field detection unit is Type C and has the configuration of the second embodiment (the magnetic state variable member 40 and the magnetic sensing portion of the magnetic detector element are magnetically coupled). [Figure 21B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to Example 3-2. FIG. [Figure 22A] 13 is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 3-2. FIG. [Figure 22B] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 3-2. FIG. [Figure 23] 13 is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to a modified example of variable magnetic field detection unit Example 2-1. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0041] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. In each drawing, the same components are given the same reference numerals and the description will be omitted. In order to show the positional relationship of each component, reference coordinates are appropriately shown in each drawing.

[0042] Fig. 1 is a block diagram of a magnetic sensor according to an embodiment of the present invention. Fig. 2 is an explanatory diagram of a magnetic field detection unit provided in the magnetic sensor according to an embodiment of the present invention. The magnetic sensor 1 of this embodiment includes a magnetic field detection unit 2, a control power supply 3, a magnetic field calculation unit 4, an amplifier 5, an analog-digital conversion circuit (A / D conversion circuit 6), and a control unit 7. The control unit 7 controls each unit constituting the magnetic sensor 1, and is configured as a CPU (Central Processing Unit), a program, etc.

[0043] The magnetic field detection unit 2 detects an external magnetic field as a measurement target. As shown in FIG. 2, the magnetic field detection unit 2 is configured with a full bridge circuit 15 composed of magnetic detector elements 10a, 10b, 10c, and 10d that measure a magnetic field along the X direction. In this embodiment, the magnetic field detection unit 2 has variable magnetic field detection units 100a, 100b, 100c, and 100d corresponding to the magnetic detector elements 10a, 10b, 10c, and 10d, respectively. The control power supply 3 applies a predetermined current or a predetermined voltage to each unit based on a control signal from the control unit 7.

[0044] The magnetic field calculation unit 4 calculates the external magnetic field (measured magnetic field H) to be measured based on the output of the magnetic field detection unit 2, and is composed of, for example, a CDS (Correlated Double Sampling) circuit. The magnetic field calculation unit 4 calculates the measured magnetic field H based on a first output from the variable magnetic field detection units 100a, 100b, 100c, and 100d when the magnetic state of the magnetic state variable member 40 described later is in a first state, and a second output from the variable magnetic field detection units 100a, 100b, 100c, and 100d when the magnetic state of the magnetic state variable member 40 is in a second state. For example, 1 / f noise can be removed from the first output by calculating the difference between a signal based on the first output and a signal based on the second output.

[0045] In the magnetic sensor 1, after the magnetic field calculation unit 4 calculates the measured magnetic field H, the signal corresponding to the calculated measured magnetic field H is amplified by the amplifier 5 and then converted into digital data by the A / D conversion circuit 6.

[0046] The four magnetic detector elements 10a, 10b, 10c, and 10d included in the magnetic field detection unit 2 of the magnetic sensor 1 according to one embodiment of the present invention may be provided on the same substrate (one chip). In this embodiment, the four magnetic detector elements 10a, 10b, 10c, and 10d are provided on the same substrate (not shown), and FIG. 2 is a view of the magnetic field detection unit 2 of the magnetic sensor 1 as viewed from the stacking surface (front surface) side of the substrate in the normal direction of the substrate. That is, in FIG. 2, the Z1 side is the front surface side of the substrate, and the Z2 side is the back surface side of the substrate. The Z direction is along the stacking direction of the magnetic detector elements 10a, 10b, 10c, and 10d.

[0047] The magnetic field detection unit 2 has a full bridge circuit 15 in parallel connected between a power supply terminal Vdd, which is a power supply point, and a ground terminal GND. The full bridge circuit is made up of a first half bridge circuit in which magnetic detector elements 10a and 10b, both of which extend in the Y direction, are connected in series, and a second half bridge circuit in which magnetic detector elements 10c and 10d, both of which extend in the Y direction, are connected in series.

[0048] The first half-bridge circuit has an output terminal V1 between the magnetic detector element 10a and the magnetic detector element 10b. The second half-bridge circuit has an output terminal V2 between the magnetic detector element 10c and the magnetic detector element 10d. The magnitude of the external magnetic field applied from the outside as the measurement magnetic field H can be quantitatively measured by the potential difference (midpoint potential Va of the first half-bridge circuit-midpoint potential Vb of the second half-bridge circuit) between these two output terminals V1 and V2. In this embodiment, a first signal including the midpoint potential Va from the output terminal V1 and a second signal including the midpoint potential Vb from the output terminal V2 are output from the magnetic field detection unit 2, and the process performed by the magnetic field calculation unit 4 includes calculating the midpoint potential difference using these first and second signals as inputs.

[0049] In a pair of magnetic detector elements 10a and 10b forming a first half-bridge circuit, the magnetization 11m of the fixed magnetic layer 11 (see FIG. 3A) is oriented in the X2 direction and the X1 direction, in that order, as shown by the hollow arrows in FIG. 2. In a pair of magnetic detector elements 10c and 10d forming a second half-bridge circuit, the magnetization 11m of the fixed magnetic layer 11 is oriented in the X1 direction and the X2 direction, in that order, as shown by the hollow arrows in FIG. 2.

[0050] In the first half-bridge circuit and the second half-bridge circuit, the magnetization 11m of the fixed magnetic layer 11 of the magnetic detector element 10b and the magnetic detector element 10d on the power supply terminal Vdd side is opposite (anti-parallel). In addition, the magnetization 11m of the fixed magnetic layer 11 of the magnetic detector element 10a and the magnetic detector element 10c on the ground terminal GND side is opposite (anti-parallel). Therefore, the sensitivity axis direction of the magnetic detector elements 10a, 10b, 10c, and 10d is the X direction, which is also referred to as the "first direction" in this specification. The Z direction is also referred to as the "second direction" and the Y direction is also referred to as the "third direction".

[0051] The four magnetic detector elements 10a, 10b, 10c, and 10d have the same orientation of magnetization 13m of the free magnetic layer 13 (see FIG. 3A) when the measurement magnetic field H is not applied, and are aligned along the Y direction Y2 direction (hereinafter abbreviated as "Y2 direction"; the same applies to other directions) as indicated by the black arrow in FIG. 2. There is no limitation on the method for aligning the orientation of magnetization 13m of the free magnetic layer 13 when the measurement magnetic field H is not applied. An external bias magnetic field may be applied, or exchange coupling with an antiferromagnetic layer that interacts with the free magnetic layer 13 may be used.

[0052] With the above-mentioned configuration, the output from the output terminal V1 from the first half-bridge circuit and the output terminal V2 from the second half-bridge circuit change in the opposite direction as the magnitude of the measured magnetic field H in the X direction changes. Therefore, a large output is obtained as the potential difference between the two output terminals V1 and V2. Therefore, the magnetic sensor 1 can detect the measured magnetic field H with high accuracy. Note that the first half-bridge circuit or the second half-bridge circuit can be used instead of the full-bridge circuit 15, or the magnetic sensor element 10a can be used alone.

[0053] 2, the magnetic sensor 1 according to this embodiment includes variable magnetic field detection units 100a, 100b, 100c, and 100d that correspond to the magnetic detector elements 10a, 10b, 10c, and 10d, respectively, and measure the measurement magnetic field H by changing the surrounding magnetic environment. Hereinafter, the variable magnetic field detection unit 100a will be described as a specific example.

[0054] (First embodiment) 3A is a diagram for explaining a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in a first state) included in the magnetic sensor according to the first embodiment of the present invention. The variable magnetic field detection unit 100a includes a first magnetic body 31 and a second magnetic body 32 magnetized by a measurement magnetic field H along a first direction, a magnetic detector element 10a located between the first magnetic body 31 and the second magnetic body 32 in the first direction, a magnetic state variable member 40 whose magnetic state can be changed, and a magnetic state modulating member 20 that changes the magnetic state of the magnetic state variable member 40. In this specification, the concept of the term "magnetization" used for a magnetic member such as the magnetic state variable member 40 also includes the generation of a magnetic field inside the member based on a physical phenomenon different from the magnetization of a ferromagnetic body (for example, a virtual magnetic field generated based on the topological properties of an antiferromagnetic body).

[0055] The first magnetic body 31 and the second magnetic body 32 may be made of any material as long as they can be magnetized in the first direction by the measurement magnetic field H along the first direction. Specific examples include magnetic materials such as CoFe alloy and NiFe alloy (nickel-iron alloy). The first magnetic body 31 and the second magnetic body 32 function as a magnetic collector (yoke) that collects and magnetizes the measurement magnetic field H in the first direction. As shown in FIG. 3A, when the measurement magnetic field H is oriented on one side of the first direction, specifically in the X1 direction, the measurement magnetic field H is collected by the first magnetic body 31 and magnetizes the first magnetic body 31, so that a magnetic flux (hereinafter also referred to as "measurement magnetic flux Φ") having a higher density than the measurement magnetic field H is generated in the first magnetic body 31, and this measurement magnetic flux Φ is emitted in the first direction from the first end 311, which is the end of the first magnetic body 31 on the first orientation side (X1 side). The magnetic permeability μ0 of the insulator 50 made of a first material and located around the first magnetic body 31 and the second magnetic body 32 is sufficiently lower than the magnetic permeability of the first magnetic body 31 and the second magnetic body 32, so the measurement magnetic flux Φ emitted in the first direction from the first end 311 diffuses in the second and third directions within the first material, but converges to the end of the second magnetic body 32 on the X2 side.

[0056] The magnetic detector 10a is located in the first direction from the first end 311, which is the end of the first magnetic body 31 on the first direction side (X1 side), and has a sensitivity axis along the first direction. Specific examples of the magnetic detector 10a include magnetoresistance effect elements such as giant magnetoresistance effect elements (GMR) and tunnel magnetoresistance effect elements (TMR), and Hall elements. FIG. 3A shows a giant magnetoresistance effect (GMR) element as a specific example of the magnetic detector 10a. The magnetic detector 10a is located between the first magnetic body 31 and the second magnetic body 32. In other words, the second magnetic body 32 is provided distal to the magnetic detector 10a in the first direction (X direction) as viewed from the first end 311 of the first magnetic body 31. The first magnetic body 31 and the second magnetic body 32 collect the measurement magnetic field H in the first direction (X direction) and increase the magnetic flux density between the first magnetic body 31 and the second magnetic body 32, so that the magnetic detection element 10a has a higher magnetic resolution than when the first magnetic body 31 and the second magnetic body 32 are not provided.

[0057] The magnetic sensor element 10a, which is a giant magnetoresistance effect element, has a pinned magnetic layer 11, a free magnetic layer 13, and an intermediate layer 12 formed between the pinned magnetic layer 11 and the free magnetic layer 13. The pinned magnetic layer 11 is made of a magnetic material such as a CoFe alloy (cobalt-iron alloy). The intermediate layer 12 is made of a non-magnetic material such as Cu. The free magnetic layer 13 is made of a soft magnetic material such as a CoFe alloy or a NiFe alloy (nickel-iron alloy) and is formed as a single layer structure, a laminated structure, a laminated ferrimagnetic structure, or the like. When the magnetic sensor element 10a is made of a tunnel magnetoresistance effect element, the intermediate layer 12 is made of a material such as MgO, Al 2 O 3 , an insulating barrier layer made of titanium oxide or the like.

[0058] The resistance value of the magnetic sensor element 10a changes depending on the relative relationship between the magnetization directions of the fixed magnetic layer 11, in which the direction of magnetization 11m is fixed, and the free magnetic layer 13, which is a magnetic sensing part in which the direction and magnitude of magnetization 13m change depending on an external magnetic field. The variable magnetic field detection part 100a of the magnetic sensor 1 can measure the direction and strength of the external magnetic field based on the change in the resistance value of the magnetic sensor element 10a. In this embodiment, the free magnetic layer 13 is located on the Z2 side of the magnetic sensor element 10a, and the detection center 10P of the magnetic sensor element 10a is located at the center of the free magnetic layer 13.

[0059] The magnetic state variable member 40 is a member that can take a first state and a second state that have different magnetic states including at least one of effective magnetic permeability and the direction of magnetization 40m, and the magnetic state is controlled by the magnetic state modulating member 20. The magnetic state variable member 40 is located on the first orientation side (X1 side) of the first end portion 311 of the first magnetic body 31, and in the example shown in Fig. 3A, it is located between the first magnetic body 31 and the second magnetic body 32 in the first direction.

[0060] Although the relative permeability of the magnetic state variable member 40 made of an antiferromagnetic material is about 1 or less, as described above, a magnetic field higher than the external magnetic field may be generated inside the magnetic state variable member 40. In this case, the magnetic state variable member 40 generates a magnetic collection phenomenon that collects the external magnetic field inside, but due to its nature as an antiferromagnetic material, the magnetic field generated inside the magnetic state variable member 40 does not leak out to a member that is not magnetically coupled to the magnetic state variable member 40. Therefore, in this specification, the "effective magnetic permeability" of the magnetic state variable member 40 is evaluated based on the magnetic collection function when it is subjected to an external magnetic field in a predetermined direction. For example, when the relative permeability around the magnetic state variable member 40 is 1, if the magnetic state variable member 40 has a function of further collecting the external magnetic field when it is subjected to an external magnetic field having a component along the first direction, it is determined that the effective relative permeability of the magnetic state variable member 40 in the first direction exceeds 1. Therefore, when the effective relative permeability of the magnetic state changeable member 40 in the first direction exceeds 1 as described above, the magnetic flux density around the magnetic state changeable member 40 decreases due to the magnetic flux collecting function of the magnetic state changeable member 40.

[0061] In one specific example, the magnetic state variable member 40 has an effective magnetic permeability μ2 in the first direction (X direction) in the second state that is higher than the effective magnetic permeability μ1 in the first direction (X direction) in the first state. The effective magnetic permeability μ2 in the first direction (X direction) in the second state is also higher than the magnetic permeability μ0 in the first direction (X direction) of the first material located between the first magnetic body 31 and the magnetic detection element 10a. In this embodiment, an insulator 50 is located as the first material.

[0062] In the first embodiment, the magnetic state variable member 40 and the magnetic state modulation member 20 are stacked in the second direction (Z direction) to form the magnetic control body 60, and a non-magnetic member 41 is provided between the magnetic control body 60 and the magnetic detection element 10a. The non-magnetic member 41 magnetically decouples the magnetic state variable member 40 of the magnetic control body 60 from the free magnetic layer 13 of the magnetic detection element 10a.

[0063] (First state) As shown in FIG. 3A, the measurement magnetic field H is collected by the first magnetic body 31 functioning as a yoke, the first magnetic body 31 is magnetized by this magnetic field, and the measurement magnetic flux Φ is emitted from the first end 311 of the first magnetic body 31. In the first state, the effective magnetic permeability μ1 in the X direction of the magnetic state variable member 40 is not significantly different from the magnetic permeability μ0 of the insulator 50. Therefore, the measurement magnetic flux Φ is diffused and emitted from the first end 311 of the first magnetic body 31 so as to have a component in the X1 direction and a component in the second direction (Z direction) and a third direction (Y direction). Then, between the first magnetic body 31 and the second magnetic body 32, the components in the second direction and the third direction are converged so as to become smaller, and the measurement magnetic flux Φ reaches the second magnetic body 32 located on the X1 side of the first magnetic body 31. A part of the measurement magnetic flux Φ that diffuses and converges in this way reaches the free magnetic layer 13 of the magnetic sensor element 10a and is measured by the magnetic sensor element 10a.

[0064] (Second state) FIG. 3B is a diagram for explaining the variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in the second state) included in the magnetic sensor according to the first embodiment of the present invention. In the second state, the effective magnetic permeability μ2 in the X direction of the magnetic state variable member 40 is higher than the magnetic permeability μ0 of the insulator 50. Therefore, the measurement magnetic flux Φ emitted from the first end 311 passes preferentially through the magnetic state variable member 40. Due to the concentration of the measurement magnetic flux Φ on the magnetic state variable member 40, the density of the measurement magnetic flux Φ reaching the free magnetic layer 13 decreases compared to the first state, and the measurement sensitivity of the measurement magnetic flux Φ decreases in the magnetic sensor element 10a located near the magnetic state variable member 40. Therefore, the second output from the variable magnetic field detection unit in the second state has the same noise signal intensity as the first output in the first state, but the signal intensity based on the measurement magnetic flux Φ decreases. Note that FIG. 3B shows a case where the magnetic state variable member 40 is made of an antiferromagnetic material. For this reason, the measurement magnetic flux Φ that enters the magnetic state variable member 40 from the first magnetic body 31 does not leak out from the magnetic state variable member 40. When the magnetic state variable member 40 is made of a ferromagnetic body, the magnetic flux based on the measurement magnetic flux Φ at the X1 side end of the magnetic state variable member 40 passes through the second magnetic body 32 and is released from the X1 side of the second magnetic body 32.

[0065] 4 is a flow chart for explaining a magnetic measurement method using a magnetic sensor according to the first embodiment of the present invention. As shown in FIG. 4, first, in a first measurement step, a control signal output from the control unit 7 is output from the control power supply 3 to set the magnetic state of the magnetic state variable member 40 of each of the variable magnetic field detectors 100a to 100d included in the magnetic field detector 2 to a first state, and measurements are performed by the magnetic detector elements 10a, 10b, 10c, and 10d with the magnetic state variable member 40 in the first state, and a first output is obtained from each of the variable magnetic field detectors 100a, 100b, 100c, and 100d. These signals cause the magnetic field detector 2 to output a first signal (a signal including a midpoint potential Va from the output terminal V1) and a second signal (a signal including a midpoint potential Vb from the output terminal V2) (step S101). These two signals output from the magnetic field detection unit 2 are input to the magnetic field calculation unit 4 and stored in the magnetic field calculation unit 4 or in a memory not shown, either as these signals or as a midpoint potential difference signal, which is the difference between the two signals.

[0066] Next, as a second measurement step, a control signal output from the control unit 7 causes the control power supply 3 to output a signal for changing the magnetic state of the magnetic state variable member 40 of each of the variable magnetic field detectors 100a, 100b, 100c, and 100d of the magnetic field detector 2 to a second state, and the magnetic state variable member 40 is changed to the second state, and measurements are performed by the magnetic detector elements 10a, 10b, 10c, and 10d, and a second output is obtained from each of the variable magnetic field detectors 100a, 100b, 100c, and 100d. These signals cause the magnetic field detector 2 to output a first signal and a second signal (step S102). The measurement times of steps S101 and S102 are both sufficiently shorter than 1 second (for example, 0.3 seconds), and the time required for steps S101 and S102 is also sufficiently shorter than 1 second (for example, 0.7 seconds). Therefore, steps S101 and S102 are performed in an environment in which the 1 / f noise is substantially equal, and the 1 / f noise included in the first output and the 1 / f noise included in the second output are substantially equal. The two signals output from the magnetic field detection unit 2 are input to the magnetic field calculation unit 4, and are stored in the magnetic field calculation unit 4 or in a memory (not shown) as they are or as a midpoint potential difference signal, which is the difference between the two signals.

[0067] Next, the magnetic field calculation unit 4 performs a process of calculating the difference between the signal based on the first output (signal including the midpoint potential difference in the first state) and the signal based on the second output (signal including the midpoint potential difference in the second state) stored in the magnetic field calculation unit 4 or a memory (not shown) in steps S101 and S102 as a magnetic field calculation step (step S103). When the signals stored in the magnetic field calculation unit 4 or a memory (not shown) are the first signal and the second signal before the midpoint potential difference is calculated, the magnetic field calculation unit 4 performs a process of calculating the difference between the first signal and the second signal in the first state to obtain a signal including the midpoint potential difference in the first state, and a process of calculating the difference between the first signal and the second signal in the second state to obtain a signal including the midpoint potential difference in the second state, and further performs a process of calculating the difference between these two signals including the midpoint potential difference as a magnetic field calculation step. By performing the above process by the magnetic field calculation unit 4, a measurement signal from which 1 / f noise has been appropriately removed can be obtained. This measurement signal is amplified by the amplifier 5 and converted into a digital signal by the A / D conversion circuit 6. Therefore, since the measurement signal obtained by the magnetic measurement method using the magnetic sensor 1 of this embodiment has 1 / f noise properly removed, the resolution (magnetic resolution) of the signal based on the measured magnetic flux Φ is higher than that of the signal based on the first output (signal including the midpoint potential difference in the first state) or the signal based on the second output (signal including the midpoint potential difference in the second state).

[0068] In this embodiment, since the magnetic field detection unit 2 has a full bridge circuit 15, the signals to be processed to find the difference in the magnetic field calculation unit 4 are the signal of the midpoint potential difference in the first state based on the first output and the signal of the midpoint potential difference in the second state based on the second output, but the signals to be processed by the magnetic field calculation unit 4 are appropriately set according to the output signal from the magnetic field detection unit 2. For example, when the magnetic field detection unit 2 has only one variable magnetic field detection unit 100a, the magnetic field calculation unit 4 finds the difference between the first signal and the second signal from the variable magnetic field detection unit 100a.

[0069] (Layout) The relative positions of the magnetic detector element 10a and the magnetic state variable member 40 are preferably set so that the degree of difference between the signal based on the measured magnetic flux Φ included in the first output and the signal based on the measured magnetic flux Φ included in the second output becomes large.

[0070] From this viewpoint, the magnetic detector element 10a and the magnetic state variable member 40 may be aligned in a second direction (Z direction) perpendicular to the first direction (X direction). In the case of this arrangement, a change in the magnetic state of the magnetic state variable member 40 is likely to appear as a change in the strength of the measurement magnetic flux Φ that reaches the detection center 10P of the magnetic detector element 10a.

[0071] It is preferable that the magnetic state variable member 40 has a portion closer to the first magnetic body 31 in the first direction (X direction) than the detection center 10P of the magnetic detector element 10a. In the case of this arrangement, the measurement magnetic flux Φ emitted from the first end 311 in the second state easily reaches the magnetic state variable member 40 that is relatively closer in the first direction, so that the magnetic flux is efficiently concentrated on the magnetic state variable member 40 in the second state. From this viewpoint, it is preferable that the length in the first direction of the magnetic state variable member 40 is longer than the length in the first direction (X direction) of the magnetic detector element 10a.

[0072] It is preferable that the center of the magnetic state variable member 40 in the first direction (X direction) and the detection center 10P of the magnetic detector element 10a are at the same position in the first direction (X direction). In the case of this arrangement, the magnetic flux in the first direction (X direction) that the magnetic state variable member 40 in the first state can exert on the magnetic detector element 10a and the magnetic flux in the first direction that the magnetic state variable member 40 in the second state can exert on the magnetic detector element 10a are likely to be equal. Therefore, it is expected that the correlation between the noise signal included in the first output and the noise signal included in the second output will be high, and the noise removal efficiency in the measurement signal obtained in the magnetic field calculation unit 4 will be high. Note that, from the viewpoint of stably increasing the noise removal efficiency in the measurement signal and from the viewpoint of increasing the operational stability of the magnetic state variable member 40, it may be preferable that the center of the magnetic state variable member 40 and the center of the magnetic state modulating member 20 are equal in the first direction (X direction).

[0073] The length of the magnetic state variable member 40 in the first direction (X direction) is preferably longer than the length of the magnetic detector element 10a in the first direction (X direction). In the case of this arrangement, a part of the X2 side of the magnetic state variable member 40 is located between the first end 311 and the magnetic detector element 10a in the first direction (X direction), so that the magnetic flux density reaching the magnetic detector element 10a is easily affected by the magnetic state of the magnetic state variable member 40.

[0074] From the viewpoint of more stably realizing that the magnetic flux density reaching the magnetic detector element 10a is easily affected by the magnetic state of the magnetic state variable member 40, it is preferable that the magnetic state variable member 40 is arranged so that the first magnetic body 31 and the second magnetic body 32 are magnetically coupled in the second state. FIG. 5 is an explanatory diagram of a preferred example of a variable magnetic field detection unit included in the magnetic sensor according to the first embodiment of the present invention. In the example shown in FIG. 5, the magnetic state variable member 40 is arranged so that the first magnetic body 31 and the second magnetic body 32 are magnetically coupled in the second state when viewed from the second direction (Z direction). Specifically, the magnetic state variable member 40 has a portion overlapping with the first magnetic body 31 and a portion overlapping with the second magnetic body 32. 5, the measurement magnetic flux Φ generated by magnetization of the first magnetic body 31 flows almost directly from the magnetic coupling part between the magnetic state variable member 40 and the first magnetic body 31 into the magnetic state variable member 40 in the second state, and flows almost directly from the magnetic coupling part between the magnetic state variable member 40 and the first magnetic body 31 to the second magnetic body 32. Therefore, the measurement magnetic flux Φ does not substantially have a component that reaches the magnetic detector element 10a, and only a noise signal tends to be measured by the magnetic detector element 10a.

[0075] FIG. 6 is an explanatory diagram of another preferred example of the variable magnetic field detector included in the magnetic sensor according to the first embodiment of the present invention. In the configuration shown in FIG. 6, the arrangement of the components of the magnetic detector 10a is reversed in the Z direction compared to the configuration shown in FIG. 5. That is, in FIG. 5, the free magnetic layer 13 of the magnetic detector 10a is located on the side closer to the magnetic control body 60 (Z2 side), but in FIG. 6, the fixed magnetic layer 11 of the magnetic detector 10a is located on the side closer to the magnetic control body 60 (Z2 side). Therefore, in the configuration shown in FIG. 6, the detection center 10P of the magnetic detector 10a is closer to the center of the first magnetic body 31 and the second magnetic body 32 in the second direction (Z direction) than in the configuration shown in FIG. 5. Therefore, it is expected that the measurement magnetic flux Φ that reaches the detection center 10P of the magnetic detector 10a in the first state has a relatively high intensity of the component in the X1 direction.

[0076] FIG. 7 is an explanatory diagram of another example of a preferred embodiment of the variable magnetic field detector included in the magnetic sensor according to the first embodiment of the present invention. In the configuration shown in FIG. 7, the arrangement relationship between the magnetic detector element 10a and the magnetic control body 60 in the second direction (Z direction) is reversed in comparison with the configuration shown in FIG. 5. That is, in FIG. 5, the magnetic detector element 10a is located on the Z1 side of the magnetic control body 60, but in FIG. 7, the magnetic detector element 10a is located on the Z2 side of the magnetic control body 60. Therefore, in the configuration shown in FIG. 7, the detection center 10P of the magnetic detector element 10a is farther from the center of the first magnetic body 31 and the second magnetic body 32 in the second direction (Z direction) than in the configuration shown in FIG. 5. Therefore, in the second state, it is expected that the intensity of the measurement magnetic flux Φ reaching the detection center 10P of the magnetic detector element 10a will be particularly low. Furthermore, as viewed from the first end 311, the magnetic detector element 10a is located behind the magnetic control body 60, and therefore even if a part of the magnetic flux Φ to be measured is emitted from the first end 311 to the insulator 50, the magnetic flux is unlikely to reach the magnetic detector element 10a because the magnetic control body 60 acts as a magnetic shield. Therefore, in the second state, only noise signals are likely to be measured by the magnetic detector element 10a.

[0077] 8 is an explanatory diagram of a modified example of the variable magnetic field detector included in the magnetic sensor according to the first embodiment of the present invention. When the direction of the measurement magnetic field H is limited to one direction, one of the first magnetic body 31 and the second magnetic body 32 can be omitted. For example, when the direction of the measurement magnetic field H is only the first direction, as shown in FIG. 8, even if the second magnetic body 32 is omitted, it is possible to stably realize that the measurement magnetic flux Φ is unlikely to reach the detection center 10P of the magnetic detector element 10a in the second state. Note that FIG. 8 shows a case where the magnetic state variable member 40 is made of an antiferromagnetic material.

[0078] When the measurement magnetic field H is a magnetic field in the first direction (X direction), it is preferable that the length of the first magnetic body 31 in the first direction (X direction) is longer than the length in the second direction (Z direction). When the length relationship is reversed (length in the first direction < length in the second direction), there is a high possibility that a magnetic field in the second direction (Z direction) will be detected.

[0079] Second embodiment FIG. 9 is a diagram illustrating a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in the second state) included in a magnetic sensor according to a second embodiment of the present invention. In contrast to the first embodiment, the second embodiment does not include a non-magnetic member 41, and the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled. Therefore, in the second embodiment, in the second state, the magnetic state variable member 40 substantially functions as the free magnetic layer 13. Therefore, in the second state, the detection sensitivity of the magnetic detection element 10a is directly affected by the magnetic state of the magnetic state variable member 40.

[0080] For example, in the second state, the effective permeability μ2 of the magnetic state variable member 40 in the first direction is higher than the permeability μ0 of the surrounding insulator 50, so that the measurement magnetic flux Φ is preferentially concentrated in the magnetic state variable member 40 as shown in Fig. 9. In this case, a part of the measurement magnetic flux Φ that is magnetized in the magnetic state variable member 40 and travels in the X1 direction also passes through the free magnetic layer 13 that is magnetically coupled to the magnetic state variable member 40, and its direction has a component in the X1 direction. Therefore, in the second embodiment, the intensity of the measurement magnetic flux Φ that reaches the free magnetic layer 13 may be higher in the second state than in the first state.

[0081] In contrast, in the first state, the effective permeability μ1 of the magnetic state variable member 40 in the first direction is equivalent to the permeability μ0 of the surrounding insulator 50, so the degree of collection of the measurement magnetic flux Φ by the magnetic state variable member 40 is lower than in the second state. Therefore, even if the measurement magnetic flux Φ reaches the free magnetic layer 13 magnetically coupled to the magnetic state variable member 40, the magnetic flux density is lower than in the second state.

[0082] Thus, in the second embodiment, the measurement magnetic flux Φ is more likely to reach the free magnetic layer 13 in the second state than in the first state. Therefore, in the second embodiment, a measurement signal from which a noise signal has been removed can be obtained by subtracting the first output obtained in the first state from the second output obtained in the second state.

[0083] In the second embodiment, since the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled, the magnetic state variable member 40 and the free magnetic layer 13 may be made of a common material, and one member (variable free magnetic layer) may perform the functions of the magnetic state variable member 40 and the free magnetic layer 13. In this case, the intermediate layer 12 and the fixed magnetic layer 11 may be laminated on a part of the surface of the variable free magnetic layer facing the Z1 side to form a magnetic detection element 10a having a magnetoresistance effect element structure. The variable free magnetic layer may be made of the same material as the material constituting the magnetic state variable member 40. Therefore, the concept of the term "magnetization" for the variable free magnetic layer is broader than the magnetization of a ferromagnetic material, and includes, for example, a virtual magnetic field based on the topological properties of an antiferromagnetic material.

[0084] 10 is a diagram for explaining a preferred example of a variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in the second state) included in the magnetic sensor according to the second embodiment of the present invention. In the example shown in FIG. 10, similar to the example shown in FIG. 5, in the second state, the magnetic state variable member 40 is magnetically coupled to the first magnetic body 31 and the second magnetic body 32. Therefore, in the second state, the free magnetic layer 13 is magnetically coupled to the first magnetic body 31 and the second magnetic body 32. Therefore, in the second state, the measurement magnetic flux Φ reaches the free magnetic layer 13 particularly efficiently.

[0085] In the variable magnetic field detection unit 100a of the magnetic sensor 1 according to the embodiment of the present invention, the density of the measurement magnetic flux Φ that reaches the free magnetic layer 13 differs between a first state in which the effective magnetic permeability in the first direction of the magnetic state variable member 40 is relatively low and a second state in which the effective magnetic permeability is relatively high. Whether the state in which the measurement magnetic flux Φ that reaches the free magnetic layer 13 is relatively high is the first state or the second state is determined by the specific configuration.

[0086] Below, the detailed operation of the variable magnetic field detection unit 100a will be described using as specific examples a configuration (Type A) in which current is passed through the magnetic state modulation member 20 along the third direction (Y direction) to magnetize the magnetic state modulation member 20 in the third direction (Y direction), a configuration (Type B) in which current is passed through the magnetic state modulation member 20 along the first direction (X direction) to magnetize the magnetic state modulation member 20 in the third direction (Y direction), and a configuration (Type C) in which current is passed through the magnetic state modulation member 20 along the third direction (Y direction) to magnetize the magnetic state modulation member 20 in the second direction (Z direction), all of which share a common configuration in which current is passed through the magnetic state modulation member 20 to apply a spin orbit torque to the magnetic state variable member 40 and magnetize the magnetic state variable member 40 in a predetermined direction.

[0087] (Example 1-1) FIG. 11A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to an example (Example 1-1) having a configuration in which the variable magnetic field detection unit is Type A and the first embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically uncoupled). FIG. 11B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to Example 1-1. In the variable magnetic field detection unit 100a shown in FIG. 11A and FIG. 11B, the first magnetic body 31, the second magnetic body 32, and the insulator 50 are omitted (same below).

[0088] In Example 1-1, the magnetic state modulation member 20 has a spin torque generating section that exerts a spin orbit torque on the magnetic state variable member 40 by causing the spin Hall effect, the Rashba-Edelstein effect, or the like to occur when a current is applied to the magnetic state modulation member 20 in the XY in-plane direction. The magnetic state modulation member 20 may be a film-like body, and the entire body may be composed of the spin torque generating section. In the configuration shown in FIG. 11A, the magnetic state modulation member 20 is composed of the spin torque generating section. Materials that compose the spin torque generating section include heavy metals (5d transition metals) such as Hf, Ta, W, Pt, and Ir, which have a high specific gravity among paramagnetic transition metals; BiSb, BiSe, Bi 2 Se 3 , Bi2 Te 3 Topological insulators such as Mn 3 X(X=Sn, Ge, Ga, Rh, Pt, Ir), Mn 1-x Tr x Examples of the antiferromagnetic material include gamma-phase (Tr=Ni, Fe, Cu, Ru, Pd, Ir, Rh, Pd, Pt); half-Heusler alloy topological semimetals such as LuPtSb, LuPdBi, LuPtBi, ScPtBi, YAuPb, LaPtBi, CePtBi, ThPtPb, and LaAuPb, and mixed crystals thereof. The spin torque generating portion may be made of a single-phase film or a laminated film. In the case of a laminated film, a boundary region may be formed between adjacent films.

[0089] The magnetic state variable member 40 is made of a material that can rotate the magnetization 40m of the magnetic state variable member 40 by receiving the spin orbit torque from the magnetic state modulation member 20. Examples of such materials include soft magnetic materials such as CoFe alloys and NiFe alloys (nickel-iron alloys); 3 Examples of antiferromagnetic materials include X (X=Sn, Ge, Ga, Rh, Pt, Ir). The magnetic state variable member 40 may be made of a single-phase film or a laminated film. When it is a laminated film, a boundary region may be generated between adjacent films.

[0090] The non-magnetic member 41 may be made of an organic material or an inorganic material. In the case of an inorganic material, it may be made of a conductive material such as Cu or Ru, or may be made of an insulating material such as an oxide or nitride. The non-magnetic member 41 may be integrated with the insulator 50.

[0091] In the variable magnetic field detection unit 100a according to this embodiment, the magnetic state modulation member 20 has an antiferromagnetic portion made of an antiferromagnetic material, and as a specific example, the magnetic state modulation member 20 is entirely made of an antiferromagnetic portion. Therefore, in the first state in which the magnetic state modulation member 20 is in a non-energized state, the magnetization 40m of the magnetic state variable member 40 is oriented in the Z1 direction due to the exchange coupling 20af with the magnetic state modulation member 20 (antiferromagnetic portion). Since the thickness is small in the Z direction, the magnetization 40m is unlikely to rotate. Therefore, the magnetization 40m of the magnetic state variable member 40 is substantially fixed in the Z1 direction, and the effective permeability in the X direction, which is the application direction of the measurement magnetic field H, is low. Therefore, in the X direction, the effective permeability μ1 of the magnetic state variable member 40 is almost the same as the permeability μ0 of the surrounding insulator 50.

[0092] When a measurement magnetic field H is applied in this state, the measurement magnetic flux Φ is not concentrated in the magnetic state variable member 40. Therefore, as shown in Fig. 11B, a considerable amount of the measurement magnetic flux Φ reaches the free magnetic layer 13, and the magnetic detector element 10a measures this reaching magnetic flux.

[0093] Fig. 12A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-1. Fig. 12B is a diagram for explaining a state after a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in the magnetic sensor according to Example 1-1.

[0094] In the second state, a current 20c is passed through the magnetic state modulation member 20 in the Y direction, specifically in the Y1 direction, to bring the magnetic state modulation member 20 into a conducting state. As a result, due to the spin Hall effect or the like, spins unevenly distributed in one direction in the X direction are accumulated on the Z1 side of the magnetic state modulation member 20 and injected into the magnetic state variable member 40. The angular momentum of the accumulated spins is directly transferred, so that a torque acts on the magnetization 40m of the magnetic state variable member 40, i.e., a spin orbit torque is generated, and the magnetization 40m is oriented in the Y2 direction.

[0095] At this time, the magnetization 40m of the magnetic state variable member 40 faces in the in-plane direction of the XY plane (first surface) perpendicular to the thickness direction of the magnetic state variable member 40, and therefore the magnetization 40m can rotate in the XY plane by the measured magnetic flux Φ. That is, in the magnetic state variable member 40, in the second state, the effective magnetic permeability μ2 in the X direction is higher than the effective magnetic permeability μ1 in the X direction in the first state (μ2>μ1).

[0096] 12B, when a measurement magnetic field H is applied in this state, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which causes the magnetic state variable member 40 to have a magnetic collecting function, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. In this way, the measurement magnetic flux Φ that reached the free magnetic layer 13 when the magnetic state modulation member 20 was in a non-current-carrying state is concentrated in the magnetic state variable member 40 by applying a current 20c to the magnetic state modulation member 20. Therefore, in the second state, the measurement magnetic flux Φ is more difficult to reach the magnetic detection element 10a than in the first state.

[0097] In this way, in Example 1-1, the measurement magnetic flux Φ is more likely to reach the magnetic detection element 10a in the first state than in the second state, so that by subtracting the second output from the first output in the magnetic field calculation unit 4, a measurement signal from which 1 / f noise has been appropriately removed can be obtained.

[0098] (Example 1-2) FIG. 13A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to an embodiment (Example 1-2) having a configuration in which the variable magnetic field detection unit is Type A and the second embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically coupled). FIG. 13B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to Example 1-2. FIG. 14A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 1-2. FIG. 14B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 1-2.

[0099] The variable magnetic field detector 100a according to Example 1-2 is different from the variable magnetic field detector 100a according to Example 1-1 in that it does not have a non-magnetic member 41, but the other configurations are the same. Therefore, in the variable magnetic field detector 100a according to Example 1-2, the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled. Therefore, as shown in FIG. 13A, in the first state, which is a non-energized state in which no current is applied to the magnetic state modulation member 20, the magnetization 40m of the magnetic state variable member 40 and the magnetization 13m of the free magnetic layer 13 magnetically coupled to the magnetic state variable member 40 are oriented in the Z1 direction due to the exchange coupling 20af between the part made of an antiferromagnetic material in the magnetic state modulation member 20 and the magnetic state variable member 40.

[0100] Since the thickness of the free magnetic layer 13 in the Z direction is small, the magnetization 13m is difficult to rotate. Therefore, the magnetization 40m of the magnetic state variable member 40 and the magnetization 13m of the free magnetic layer 13 are substantially fixed in the Z1 direction. In other words, the effective magnetic permeability of the magnetic state variable member 40 and the free magnetic layer 13 in the X direction is almost the same as the magnetic permeability μ0 of the surrounding insulator 50.

[0101] Even if a measurement magnetic flux Φ is received in this state, as shown in FIG. 13B, the magnetization 13m of the free magnetic layer 13 is unlikely to rotate along the X direction, which is the sensitivity axis direction, so that the measurement magnetic flux Φ is unlikely to be measured by the magnetic detection element 10a.

[0102] On the other hand, in the second state where a current 20c in the Y1 direction is passed through the magnetic state modulation member 20, as in the case of Example 1-1, spin injection from the magnetic state modulation member 20 to the magnetic state variable member 40 occurs, and a spin orbit torque is generated in the magnetic state variable member 40, and the magnetization 40m of the magnetic state variable member 40 is aligned in the Y2 direction, as shown in Fig. 14A. Since the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled, the magnetization 13m of the free magnetic layer 13 is also aligned in the Y2 direction.

[0103] The directions of the magnetization 40m and magnetization 13m are in the XY plane perpendicular to the thickness of the magnetic state variable member 40 and the free magnetic layer 13, and therefore the direction of the magnetization 40m of the magnetic state variable member 40 and the direction of the magnetization 13m of the free magnetic layer 13 can both be rotated in the XY plane by the measured magnetic flux Φ. That is, the magnetic state variable member 40 and the free magnetic layer 13 are in a state in which the effective magnetic permeability in the X direction is high.

[0104] When a measurement magnetic field H is applied in this state, as shown in Fig. 14B, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which causes a magnetic flux collection function in the magnetic state variable member 40, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. Here, since the magnetic state variable member 40 is magnetically coupled to the free magnetic layer 13, the magnetic flux oriented in the X1 direction, which has a higher density than in the first state (Fig. 13B), reaches the free magnetic layer 13 under the influence of the magnetization 40m of the magnetic state variable member 40.

[0105] In this way, in the second state of Example 1-2, when the measurement magnetic field H is applied, the free magnetic layer 13 is magnetized more strongly in the X1 direction than in the first state, so that the measurement sensitivity of the measurement magnetic field H of the magnetic detection element 10a is relatively higher in the second state. Therefore, by subtracting the first output from the second output in the magnetic field calculation unit 4, it is possible to obtain a measurement signal from which 1 / f noise has been appropriately removed.

[0106] In the first state in Example 1-1 and Example 1-2, the magnetization 40m of the magnetic state variable member 40 is oriented in the Z1 direction by the exchange coupling 20af with the magnetic state modulation member 20 as a bias magnetic field source, but the bias magnetic field source for aligning the magnetization 40m of the magnetic state variable member 40 in a predetermined direction in the first state is not limited to this. The magnetization 40m of the magnetic state variable member 40 may be oriented in the Z direction by using an induction magnetic field from a current-carrying coil or a magnetic field from a permanent magnet as a bias magnetic field. Even in such a case, in the second state, the magnetization 40m of the magnetic state variable member 40 may be oriented in the Y direction based on the application of a current to the magnetic state modulation member 20. From the viewpoint of increasing the correlation between the noise components included in the first signal and the noise components included in the second signal, it may be preferable that there is no difference in the bias magnetic field from the bias magnetic field source between the first state and the second state.

[0107] (Example 2-1) FIG. 15A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is a first state) included in a magnetic sensor according to an embodiment (Example 2-1) having a configuration in which the variable magnetic field detection unit is Type B and the first embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically uncoupled). FIG. 15B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is a first state) included in a magnetic sensor according to Example 2-1. FIG. 16A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is a second state) included in a magnetic sensor according to Example 2-1. FIG. 16B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is a second state) included in a magnetic sensor according to Example 2-1.

[0108] The variable magnetic field detecting unit 100a of Example 2-1 has a nonmagnetic member 41, similar to the variable magnetic field detecting unit 100a of Example 1-1, and the magnetic state variable member 40 and the free magnetic layer 13 are not magnetically coupled.

[0109] In the first state, a current 20c is passed through the magnetic state modulation member 20 in the X direction, specifically in the X1 direction, to set the magnetic state modulation member 20 in a current-carrying state. By applying a current, spin injection from the magnetic state modulation member 20 to the magnetic state variable member 40 is performed, and a spin orbit torque is generated in the magnetic state variable member 40 as in Example 1-1, and the magnetization 40m of the magnetic state variable member 40 is strongly aligned in the Y2 direction as shown in FIG. 15A. In the variable magnetic field detection unit 100a according to Example 2-1, a bias magnetic field source 21 made of a permanent magnet or the like is stacked on the Z2 side of the magnetic state modulation member 20, but the magnetic field 21m generated by the bias magnetic field source 21 and the spin start torque generated by the magnetic state modulation member 20 are set so that the influence on the direction of the magnetization 40m of the magnetic state variable member 40 is dominated by the spin start torque based on the magnetic state modulation member 20 over the magnetic field 21m generated by the bias magnetic field source 21.

[0110] For this reason, even if the measurement magnetic flux Φ is applied to the magnetic state variable member 40, the magnetization 40m of the magnetic state variable member 40 is unlikely to rotate along the X direction, as shown in Fig. 15B. That is, the magnetic state variable member 40 has a low effective magnetic permeability μ1 in the X direction, which is equivalent to the magnetic permeability μ0 of the surrounding insulator 50. Therefore, the magnetic state variable member 40 is unlikely to affect the measurement magnetic flux Φ that reaches the free magnetic layer 13 of the magnetic detector element 10a, and the magnetic detector element 10a measures the measurement magnetic flux Φ in the same magnetic environment as when the magnetic state variable member 40 does not exist (is replaced by the insulator 50).

[0111] On the other hand, in the second state, the application of the current 20c to the magnetic state modulation member 20 is stopped to put it in a non-energized state. As a result, as shown in Fig. 16A, the magnetic state modulation member 20 no longer controls the direction of the magnetization 40m of the magnetic state variable member 40. Therefore, the magnetic field 21m generated by the bias magnetic field source 21 aligns the magnetization 40m of the magnetic state variable member 40 in the Y2 direction, but to a smaller extent than in the first state. Therefore, the effective magnetic permeability μ2 in the X direction of the magnetic state variable member 40 in the second state becomes higher than the magnetic permeability μ0 of the surrounding insulator 50.

[0112] 16B, when the measurement magnetic field H is applied in this state, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which causes the magnetic state variable member 40 to have a magnetic flux collecting function, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. As a result, the density of the measurement magnetic flux Φ that reaches the free magnetic layer 13 of the magnetic detector element 10a decreases, and the measurement sensitivity of the measurement magnetic field H in the variable magnetic field detector 100a decreases compared to the first state.

[0113] In this way, in Example 2-1, the measurement magnetic flux Φ is more likely to reach the magnetic detection element 10a in the first state than in the second state, so that by subtracting the second output from the first output in the magnetic field calculation unit 4, a measurement signal from which 1 / f noise has been appropriately removed can be obtained.

[0114] (Example 2-2)

[0115] FIG. 17A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to an embodiment (Example 2-2) having a configuration in which the variable magnetic field detection unit is Type B and the second embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically coupled). FIG. 17B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to Example 2-2. FIG. 18A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 2-2. FIG. 18B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 2-2.

[0116] The variable magnetic field detector 100a according to Example 2-2 is different from the variable magnetic field detector 100a according to Example 2-1 in that it does not have a non-magnetic member 41, but the other configurations are the same. Therefore, in the variable magnetic field detector 100a according to Example 2-2, the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled. Therefore, as shown in FIG. 17A, in the first state, which is a current-carrying state in which the current 20c flows in the X1 direction through the magnetic state modulating member 20, a spin orbit torque is generated in the magnetic state variable member 40, and the magnetization 40m of the magnetic state variable member 40 is strongly aligned in the Y2 direction, and also in the free magnetic layer 13 magnetically coupled to the magnetic state variable member 40, the magnetization 13m is strongly aligned in the Y2 direction.

[0117] Therefore, even if the measurement magnetic flux Φ is applied to the magnetic state variable member 40, the magnetization 40m of the magnetic state variable member 40 is unlikely to rotate along the X direction, as shown in FIG. 17B. That is, the magnetic state variable member 40 has a low effective magnetic permeability μ1 in the X direction, which is equivalent to the magnetic permeability μ0 of the surrounding insulator 50. In addition, in Example 2-2, the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled, so that the free magnetic layer 13 also has a low effective magnetic permeability in the X direction. Therefore, even if the free magnetic layer 13 receives the measurement magnetic flux Φ, it is unlikely to be magnetized in the X1 direction, and the measurement sensitivity of the measurement magnetic field H in the variable magnetic field detection unit 100a is reduced.

[0118] On the other hand, in the second state, the application of the current 20c to the magnetic state modulation member 20 is stopped to put it into a non-energized state. As a result, as shown in FIG. 18A, the magnetic state modulation member 20 no longer controls the direction of the magnetization 40m of the magnetic state variable member 40. In Example 2-2, the bias magnetic field source 21 made of a permanent magnet or the like is laminated on the Z2 side of the magnetic state modulation member 20, so that the magnetic field 21m generated by the bias magnetic field source 21 aligns the magnetization 40m of the magnetic state variable member 40 in the Y2 direction, but the degree of alignment is weaker than in the first state. Therefore, the effective magnetic permeability in the X direction of the magnetic state variable member 40 and the free magnetic layer 13 magnetically coupled thereto in the second state is higher than the magnetic permeability μ0 of the surrounding insulator 50.

[0119] 18B, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which gives rise to a magnetic flux collecting function in the magnetic state variable member 40, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. Here, since the magnetic state variable member 40 is magnetically coupled to the free magnetic layer 13, the magnetic flux oriented in the X1 direction, which has a higher density than in the first state (FIG. 17B), reaches the free magnetic layer 13 under the influence of the magnetization 40m of the magnetic state variable member 40.

[0120] In this way, in the second state of Example 2-2, when the measurement magnetic field H is applied, the free magnetic layer 13 is magnetized more strongly in the X1 direction than in the first state, so that the measurement sensitivity of the measurement magnetic field H of the magnetic detector element 10a is relatively higher in the second state. Therefore, by subtracting the first output from the second output in the magnetic field calculation unit 4, it is possible to obtain a measurement signal from which 1 / f noise has been appropriately removed.

[0121] In the above-mentioned examples (Example 2-1 and Example 2-2) having the configuration of Type B, the bias magnetic field source 21 was a permanent magnet, but is not limited to this. The bias magnetic field may be a magnetic field based on exchange coupling or an induced magnetic field from a current-carrying coil, and a member that provides these magnetic fields may be the bias magnetic field source 21. In addition, although current is applied to the magnetic state modulation member 20 in the X1 direction in the first state, it may be in the X2 direction. As a result, the magnetization 40m of the magnetic state variable member 40 is oriented in the Y1 direction, and in this case too, the magnetization 40m is unlikely to rotate even when it receives a measurement magnetic flux Φ with a large component in the X1 direction.

[0122] The bias magnetic field applied to the magnetic state variable member 40 in the second state is oriented in the Y2 direction, but is not limited to this. It is sufficient that the magnetic state variable member 40 is magnetized in a direction in which it is easily magnetized by the measurement magnetic flux Φ, and from this viewpoint, it may be preferable that the bias magnetic field is oriented in the in-plane direction of the XY plane. Since the measurement magnetic flux Φ has a maximum component in the X1 direction, from the viewpoint of reducing hysteresis, it may be preferable that the bias magnetic field is oriented along the X direction, i.e., in the X1 direction or the X2 direction.

[0123] (Example 3-1) FIG. 19A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to an embodiment (Example 3-1) having a configuration in which the variable magnetic field detection unit is Type C and the first embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically uncoupled). FIG. 19B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to Example 3-1. FIG. 20A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 3-1. FIG. 20B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 3-1.

[0124] The variable magnetic field detecting unit 100a of Example 3-1 has a nonmagnetic member 41, similar to the variable magnetic field detecting unit 100a of Example 1-1, and the magnetic state variable member 40 and the free magnetic layer 13 are not magnetically coupled.

[0125] In the first state, a current 20c in the Y direction, specifically the Y1 direction, is passed through the magnetic state modulation member 20 to bring it into a conducting state. By applying a current, spin injection is performed from the magnetic state modulation member 20 to the magnetic state variable member 40, and a spin orbit torque is generated in the magnetic state variable member 40 as in Example 1-1, and as shown in Fig. 19A, the magnetization 40m of the magnetic state variable member 40 is strongly aligned in the Z1 direction.

[0126] When the magnetic state variable member 40 is aligned in the thickness direction (Z direction) in this way, the magnetization 40m does not change easily. Therefore, even if the measurement magnetic flux Φ is applied to the magnetic state variable member 40, the magnetization 40m of the magnetic state variable member 40 is unlikely to rotate along the X direction, as shown in FIG. 19B. That is, the magnetic state variable member 40 has a low effective magnetic permeability μ1 in the X direction, which is equivalent to the magnetic permeability μ0 of the surrounding insulator 50. Therefore, the magnetic state variable member 40 is unlikely to affect the measurement magnetic flux Φ that reaches the free magnetic layer 13 of the magnetic detector 10a, and the measurement magnetic flux Φ is measured in the magnetic detector 10a in the same magnetic environment as when the magnetic state variable member 40 does not exist (is replaced by the insulator 50).

[0127] On the other hand, in the second state, the application of the current 20c to the magnetic state modulation member 20 is stopped to put the magnetic state modulation member 20 into a non-energized state. As a result, as shown in FIG. 20A, the magnetic state modulation member 20 no longer controls the direction of the magnetization 40m of the magnetic state variable member 40. In Example 3-1, the magnetic state modulation member 20 is made of an antiferromagnetic material. The exchange coupling 20af of the magnetic state modulation member 20 functions as a bias magnetic field source, and the magnetic state variable member 40 is magnetized relatively weakly in the Y2 direction. Therefore, the magnetic state variable member 40 in the second state can be magnetized in the X direction more easily than in the first state, and the effective magnetic permeability μ2 of the magnetic state variable member 40 in the X direction becomes higher than the magnetic permeability μ0 of the surrounding insulator 50.

[0128] 20B, when the measurement magnetic field H is applied in this state, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which causes the magnetic state variable member 40 to have a magnetic flux collecting function, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. As a result, the density of the measurement magnetic flux Φ that reaches the free magnetic layer 13 of the magnetic detector element 10a decreases, and the measurement sensitivity of the measurement magnetic field H in the variable magnetic field detector 100a decreases compared to the first state.

[0129] Thus, in Example 3-1, the measurement magnetic flux Φ is more likely to reach the magnetic detector element 10a in the first state than in the second state, so that by subtracting the second output from the first output in the magnetic field calculation unit 4, a measurement signal from which 1 / f noise has been appropriately removed can be obtained.

[0130] (Example 3-2) FIG. 21A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to an embodiment (Example 3-2) having a configuration in which the variable magnetic field detection unit is Type C and the second embodiment (magnetic state variable member 40 and the magnetic sensing unit of the magnetic detector element are magnetically coupled). FIG. 21B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a first state) included in a magnetic sensor according to Example 3-2. FIG. 22A is a diagram for explaining a state before a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 3-2. FIG. 22B is a diagram for explaining a state in which a measurement magnetic field is applied to a variable magnetic field detection unit (magnetic state of the magnetic state variable member is in a second state) included in a magnetic sensor according to Example 3-2.

[0131] The variable magnetic field detector 100a according to Example 3-2 is different from the variable magnetic field detector 100a according to Example 3-1 in that it does not have a non-magnetic member 41, but the other configurations are the same. Therefore, in the variable magnetic field detector 100a according to Example 3-2, the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled. Therefore, as shown in FIG. 21A, in the first state, which is a current-carrying state in which the current 20c in the X1 direction flows through the magnetic state modulating member 20, a spin orbit torque is generated in the magnetic state variable member 40, and the magnetization 40m of the magnetic state variable member 40 is aligned in the Z1 direction, and also in the free magnetic layer 13 magnetically coupled to the magnetic state variable member 40, the magnetization 13m is strongly aligned in the Z1 direction.

[0132] Therefore, even if the measurement magnetic flux Φ is applied to the magnetic state variable member 40, the magnetization 40m of the magnetic state variable member 40 is unlikely to rotate along the X direction, as shown in FIG. 21B. That is, the magnetic state variable member 40 has a low effective magnetic permeability μ1 in the X direction, which is equivalent to the magnetic permeability μ0 of the surrounding insulator 50. In addition, in Example 3-2, the magnetic state variable member 40 and the free magnetic layer 13 are magnetically coupled, so that the free magnetic layer 13 also has a low effective magnetic permeability in the X direction. Therefore, even if the free magnetic layer 13 receives the measurement magnetic flux Φ, it is unlikely to be magnetized in the X1 direction, and the measurement sensitivity of the measurement magnetic field H in the variable magnetic field detection unit 100a is reduced.

[0133] On the other hand, in the second state, the application of the current 20c to the magnetic state modulating member 20 is stopped to set the magnetic state modulating member 20 in a non-energized state. As a result, as shown in FIG. 22A, the magnetic state modulating member 20 no longer controls the direction of the magnetization 40m of the magnetic state variable member 40. In Example 3-2, the magnetic state modulating member 20 has a portion made of an antiferromagnetic material, and the magnetization 40m of the magnetic state variable member 40 is oriented in the Y2 direction due to the exchange coupling 20af between the antiferromagnetic material and the magnetic state variable member 40, but the degree of magnetization is relatively weak. Based on the magnetization of the magnetic state modulating member 40, the magnetization 13m of the free magnetic layer 13 magnetically coupled to the magnetic state variable member 40 is also oriented in the Y2 direction, and the degree of magnetization is relatively weak, similar to the magnetization 40m of the magnetic state variable member 40. For this reason, the magnetic state variable member 40 and the free magnetic layer 13 in the second state can be magnetized in the X direction more easily than in the first state. That is, the effective magnetic permeability μ2 of the magnetic state variable member 40 in the X direction is higher than the magnetic permeability μ0 of the surrounding insulator 50.

[0134] When a measurement magnetic field H is applied in this state, as shown in Fig. 22B, the magnetization 40m of the magnetic state variable member 40 rotates along the measurement magnetic flux Φ and becomes oriented in the X1 direction, which causes a magnetic flux collection function in the magnetic state variable member 40, and the measurement magnetic flux Φ is concentrated in the magnetic state variable member 40. Here, since the free magnetic layer 13 is magnetically coupled to the magnetic state variable member 40, it is influenced by the magnetization 40m of the magnetic state variable member 40, and magnetic flux oriented in the X1 direction, which has a higher density than in the first state (Fig. 21B), reaches the free magnetic layer 13.

[0135] In this way, in the second state of Example 3-2, when the measurement magnetic field H is applied, the free magnetic layer 13 is magnetized more strongly in the X1 direction than in the first state, so that the measurement sensitivity of the measurement magnetic field H of the magnetic detection element 10a is relatively higher in the second state. Therefore, by subtracting the first output from the second output in the magnetic field calculation unit 4, it is possible to obtain a measurement signal from which 1 / f noise has been appropriately removed.

[0136] In the above-mentioned examples (Example 3-1 and Example 3-2) having the configuration of Type C, the exchange coupling 20af serves as a bias magnetic field source to apply the bias magnetic field, but the present invention is not limited to this. The bias magnetic field may be a magnetic field from a permanent magnet or an induced magnetic field from a current-carrying coil, and a member that applies these magnetic fields may be the bias magnetic field source 21. In addition, although current is applied to the magnetic state modulation member 20 in the first state in the Y2 direction, it may also be in the Y1 direction. As a result, the magnetization 40m of the magnetic state variable member 40 is oriented in the Z2 direction, but even in this case, the magnetization 40m is unlikely to rotate even when it receives a measurement magnetic flux Φ with a large component in the X1 direction.

[0137] The bias magnetic field applied to the magnetic state variable member 40 in the second state was in the Y2 direction, but is not limited to this. Any direction may be used as long as the magnetization 40m of the magnetic state variable member 40, which has been set in a predetermined direction by the bias magnetic field, is easily rotated along the direction of the measurement magnetic flux Φ when the magnetic state variable member 40 receives the measurement magnetic flux Φ. From this viewpoint, it may be preferable that the bias magnetic field is in the in-plane direction of the XY plane. Since the measurement magnetic flux Φ has the maximum component in the X1 direction, from the viewpoint of reducing hysteresis, it may be preferable that the bias magnetic field is along the X direction, that is, in the X1 direction or the X2 direction.

[0138] The above-described embodiments are described for the purpose of facilitating understanding of the present invention, and are not described for the purpose of limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design modifications and equivalents that fall within the technical scope of the present invention.

[0139] In the above description, the stacking direction of the magnetic state variable member 40 and the magnetic state modulation member 20 in the magnetic control body 60 and the arrangement direction of the magnetic detection element 10a and the magnetic control body 60 are both in the second direction, but this is not limited thereto. For example, the magnetic state variable member 40 and the magnetic state modulation member 20 may be stacked in the first direction or the third direction. In addition, the boundary between the magnetic state variable member 40 and the magnetic state modulation member 20 in the magnetic control body 60 is a plane parallel to the XY plane, but this is not limited thereto. The surface formed by the boundary may have a portion inclined with respect to the XY plane. Specific examples of such a case include a configuration in which the boundary is flat but inclined with respect to the XY plane, a configuration in which the boundary is a curved surface, a configuration in which the boundary has a bent portion, and a configuration in which the boundary forms a pattern when viewed from the stacking direction. In addition, the wiring for applying a current to the magnetic state modulation member 20 may be shared with a portion of the wiring for measuring the electrical characteristics of the magnetic detection element, and this realizes simplification of the entire circuit.

[0140] Furthermore, in the above description, the magnetization 40m of the magnetic state variable member 40 rotates due to the spin orbit torque from the magnetic state modulation member 20, but this is not limited to this, and the magnetization 40m of the magnetic state variable member 40 may rotate due to the spin transfer torque, or both the spin orbit torque and the spin transfer torque may contribute to the rotation of the magnetization 40m of the magnetic state variable member 40.

[0141] In particular, when the magnetic control body 60 has an electromagnetic state variable member 601 having both the function of the magnetic state variable member 40 and the function of the magnetic state modulation member 20 as shown in Fig. 23, by passing a current 601c through the electromagnetic state variable member 601, both the spin orbit torque and the spin transfer torque may contribute to rotate the magnetization 601m of the electromagnetic state variable member 601. Fig. 23 is a modified example of the variable magnetic field detection unit example 2-1 shown in Fig. 15B, and is a diagram for explaining a state in which a measurement magnetic field is applied to the variable magnetic field detection unit (the magnetic state of the magnetic state variable member is in the first state) provided in the magnetic sensor according to the modified example.

[0142] The present invention includes the following aspects. (1) A magnetic sensor comprising: a variable magnetic field detection unit having: a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on one side of a first end of the first magnetic body in the first direction and has a sensitivity axis along the first direction; a magnetic state variable member that is located on the one side of the first end of the first magnetic body in the first direction and can take a first state and a second state in which the magnetic states including at least one of effective permeability and magnetization direction are different; and a magnetic state modulation member that changes the magnetic state of the magnetic state variable member, wherein the magnetic state modulation member has an antiferromagnetic portion made of antiferromagnetic material, and the magnetization of the magnetic state variable member in the first state or the second state is affected by exchange coupling between the antiferromagnetic portion and the magnetic state variable member. (2) The magnetic sensor described in (1) above, further comprising a magnetic field calculation unit that calculates the measured magnetic field based on a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. (3) The magnetic sensor described in (2) above, wherein the effective permeability μ2 in the first direction of the magnetic state changeable member in the second state is higher than the effective permeability μ1 in the first direction of the magnetic state changeable member in the first state, and is higher than the permeability μ0 in the first direction of a first material located between the first magnetic body and the magnetic detection element. (4) The magnetic sensor described in (3) above, wherein the variable magnetic field detection unit has a non-magnetic member between the magnetic detector element and the magnetic state variable member, and the magnetic sensing portion of the magnetic detector element is magnetically uncoupled from the magnetic state variable member. (5) The magnetic sensor according to (3) above, wherein the magnetic sensing portion of the magnetic detector element is magnetically coupled to the magnetic state variable member. (6) The magnetic sensor according to (3) above, wherein the magnetic detection element and the magnetic state variable member are aligned in a second direction perpendicular to the first direction. (7) The magnetic sensor according to (6) above, wherein the magnetic state variable member has a portion closer to the first magnetic body in the first direction than a detection center of the magnetic detector element. (8) The magnetic sensor according to (6) above, wherein the center of the magnetic state variable member in the first direction and the detection center of the magnetic detector element are at the same position in the first direction. (9) The magnetic sensor according to (8) above, wherein the length of the magnetic state variable member in the first direction is longer than the length of the magnetic detector element in the first direction. (10) The magnetic sensor according to (6), wherein the first magnetic body has a length in the first direction longer than a length in the second direction. (11) The magnetic sensor according to (1) above, wherein the variable magnetic field detection unit further includes a second magnetic body that is distal in the first direction from the magnetic detection element when viewed from the first end. (12) The magnetic sensor according to (11) above, wherein the magnetic state variable member is arranged so as to be magnetically coupled to the first magnetic body and the second magnetic body in the second state. (13) A variable magnetic field detection unit includes: a first magnetic body magnetized by a measurement magnetic field in a first direction; a magnetic detector element located on one side of a first end of the first magnetic body in the first direction and having a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction and capable of taking a first state and a second state in which the magnetic states including at least one of effective permeability and magnetization direction are different; and a magnetic state modulating member that changes the magnetic state of the magnetic state variable member, wherein the effective permeability μ2 in the first direction of the magnetic state variable member in the second state is a magnetic control body stacked in a second direction perpendicular to the first direction, the magnetic state modulation member and the magnetic state variable member being arranged side by side in the second direction; the magnetic state modulation member having a spin torque generation unit that applies a spin orbit torque to the magnetic state variable member when current is applied, the magnetic state of the magnetic state variable member when current is applied differs from the magnetic state when current is not applied, based on the spin orbit torque from the spin torque generation unit. (14) The magnetic sensor described in (13) above, wherein the variable magnetic field detection unit has a bias magnetic field source which magnetizes the magnetic state variable member along the second direction to such an extent that the magnetization does not rotate due to the measurement magnetic field when the magnetic state modulation member is in a non-current-carrying state, the magnetic state variable member is in the first state when the magnetic state modulation member is in a non-current-carrying state, and the magnetic state variable member is in the second state when the magnetic state modulation member is in a current-carrying state and a current flows in an in-plane direction of a first surface having a normal along the second direction, and in the second state, the magnetic state variable member is magnetized in a direction opposite to the direction of the current flow to such an extent that the magnetization can rotate in the in-plane direction of the first surface due to a magnetic field based on the measurement magnetic field when subjected to the spin orbit torque. (15) The magnetic sensor according to (14), wherein in the second state, the current flowing through the magnetic state modulation member is in an in-plane direction of the first surface and is along a third direction perpendicular to the first direction. (16) The magnetic sensor according to (14) above, wherein the magnetic state modulating member has an antiferromagnetic portion made of antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source. (17) The magnetic sensor according to (14) above, wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when current is passed through it, and a permanent magnet. (18) The magnetic sensor according to (17) above, wherein the bias magnetic field source is laminated on the magnetic control body. (19) The magnetic sensor described in (13) above, wherein when the magnetic state modulation member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in a third direction perpendicular to the first direction and the second direction by the magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state, and when the magnetic state modulation member is in a non-energized state, the magnetic state variable member is in the second state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction by the magnetic flux based on the measured magnetic field than in the first state. (20) The magnetic sensor described in (19) above, wherein the variable magnetic field detection unit has a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member, and the bias magnetic field received by the magnetic state variable member in the second state is aligned along an in-plane direction of a first surface having a normal along the second direction, to an extent that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measured magnetic field. (21) The magnetic sensor according to (20) above, wherein the magnetic state modulating member has an antiferromagnetic portion made of antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source. (22) The magnetic sensor according to (20), wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when current is passed through it, and a permanent magnet. (23) The magnetic sensor according to (22), wherein the bias magnetic field source is laminated on the magnetic control body. (24) The magnetic sensor according to (20), wherein the bias magnetic field is along a third direction perpendicular to the first direction and the second direction. (25) The magnetic sensor described in (13) above, wherein when the magnetic state modulation member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in the first and second directions by the magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state, and when the magnetic state modulation member is in a non-energized state, the magnetic state variable member is in the second state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction by the magnetic flux based on the measured magnetic field than in the first state. (26) The magnetic sensor described in (25) above, wherein the variable magnetic field detection unit has a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member, and the bias magnetic field received by the magnetic state variable member in the second state is aligned along an in-plane direction of a first surface having a normal along the second direction, to an extent that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measured magnetic field. (27) The magnetic sensor according to (26) above, wherein the magnetic state modulation member has an antiferromagnetic portion made of antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source. (28) The magnetic sensor according to (26) above, wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when current is passed through it, and a permanent magnet. (29) The magnetic sensor according to (28), wherein the bias magnetic field source is laminated on the magnetic control body. (30) The magnetic sensor according to (26), wherein the bias magnetic field is along a third direction perpendicular to the first direction and the second direction. (31) A variable magnetic field detection unit including: a first magnetic body magnetized by a measurement magnetic field in a first direction; a magnetic detector element located on one side of a first end of the first magnetic body in the first direction and having a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction and capable of taking a first state and a second state in which the magnetic states including at least one of effective permeability and magnetization direction are different; and a magnetic state modulating member that changes the magnetic state of the magnetic state variable member; and a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. a first measurement step of setting the magnetic state variable member to the first state and obtaining the first output when the measurement magnetic field is applied, a second measurement step of setting the magnetic state variable member to the second state and obtaining the second output when the measurement magnetic field is applied, and a magnetic field calculation step of calculating the measurement magnetic field from the first output and the second output in the magnetic field calculation step, wherein the magnetic state modulation member has an antiferromagnetic portion made of antiferromagnetic material, and the magnetization of the magnetic state variable member in the first state or the second state is affected by exchange coupling between the antiferromagnetic portion and the magnetic state variable member. (32) A magnetic measurement method using a magnetic sensor including a variable magnetic field detection unit having: a first magnetic body magnetized by a measurement magnetic field in a first direction; a magnetic detector element located on one side of a first end of the first magnetic body in the first direction, the magnetic detector element having a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction, the magnetic state variable member being capable of taking a first state and a second state in which the magnetic states including at least one of effective permeability and magnetization direction are different; and a magnetic state modulation member changing the magnetic state of the magnetic state variable member; and a magnetic field calculation unit calculating the measurement magnetic field from a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state, the method including: a first measurement step of setting the magnetic state variable member to the first state and obtaining the first output when the measurement magnetic field is applied; a second measuring step of setting the magnetic state variable member to the second state and obtaining the second output, and a magnetic field calculating step of calculating the measured magnetic field from the first output and the second output in the magnetic field calculating unit, wherein an effective permeability μ2 in the first direction of the magnetic state variable member in the second state is higher than an effective permeability μ1 in the first direction of the magnetic state variable member in the first state and is also higher than a permeability μ0 in the first direction of a first material located between the first magnetic body and the magnetic detector element, the magnetic state modulation member and the magnetic state variable member form a magnetic control body stacked in a second direction perpendicular to the first direction, the magnetic control body and the magnetic detector element are arranged side by side in the second direction, the magnetic state modulation member has a spin torque generating unit that imparts a spin orbit torque to the magnetic state variable member when current is applied, and a magnetic state of the magnetic state variable member when current is applied differs from a magnetic state when current is not applied based on the spin orbit torque from the spin torque generating unit. [Industrial Applicability]

[0143] The present invention is useful as a magnetic sensor and a magnetic measurement method having high magnetic resolution, which are capable of detecting an external magnetic field with high sensitivity. [Explanation of symbols]

[0144] 1: Magnetic sensor 2: Magnetic field detection section 3: Control power supply 4: Magnetic field calculation section 5: Amplifier 6: A / D conversion circuit 7: Control section 10P: Detection center 10a, 10b, 10c, 10d: magnetic detection element 11: Fixed magnetic layer 11m, 13m, 40m, 601m: Magnetization 12: Middle class 13: Free magnetic layer 15: Full bridge circuit 20: Magnetic state modulation member 20af: Exchange coupling 20c, 601c: Current 21: Bias magnetic field source 21m: Magnetic field 31: First magnetic body 32:Second magnetic material 40: Magnetic state variable member 41: Non-magnetic material 50: Insulator 60: Magnetic control body 601: Electromagnetically variable member 100a, 100b, 100c, 100d: Variable magnetic field detection unit 311: First end GND: Ground terminal H: Measurement magnetic field V1, V2: Output terminal Vdd: Power supply terminal Φ: measured magnetic flux

Claims

1. a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on the one side in the first direction relative to a first end of the first magnetic body, the first end being an end on one side in the first direction, and has a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction, the magnetic state variable member being capable of taking a first state and a second state in which the magnetic state includes at least one of an effective magnetic permeability and a magnetization direction and is different from one another; a magnetic state modulating member that changes the magnetic state of the magnetic state variable member; A variable magnetic field detection unit having a A magnetic sensor characterized in that the magnetic state modulation member has an antiferromagnetic portion made of antiferromagnetic material, and the magnetization of the magnetic state variable member in the first state or the second state is affected by exchange coupling between the antiferromagnetic portion and the magnetic state variable member.

2. The magnetic sensor of claim 1, further comprising a magnetic field calculation unit that calculates the measured magnetic field based on a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state.

3. The effective magnetic permeability μ2 of the magnetic state changeable member in the second state in the first direction is higher than the effective magnetic permeability μ1 in the first direction of the magnetic state changeable member in the first state; and The magnetic permeability in the first direction of a first material located between the first magnetic body and the magnetic detection element is higher than μ0; The magnetic sensor according to claim 2 .

4. The magnetic sensor according to claim 3 , wherein the variable magnetic field detection unit has a non-magnetic member between the magnetic detector element and the magnetic state changeable member, and the magnetic sensitive portion of the magnetic detector element is magnetically uncoupled from the magnetic state changeable member.

5. The magnetic sensor according to claim 3 , wherein the magnetic sensing portion of the magnetic detector element is magnetically coupled to the magnetic state changing member.

6. The magnetic sensor according to claim 3 , wherein the magnetic detector element and the magnetic state variable member are aligned in a second direction perpendicular to the first direction.

7. The magnetic sensor according to claim 6 , wherein the magnetic state changing member has a portion closer to the first magnetic body in the first direction than a detection center of the magnetic detector element.

8. The magnetic sensor according to claim 6 , wherein a center of the magnetic state changing member in the first direction and a detection center of the magnetic detector element are at the same position in the first direction.

9. The magnetic sensor according to claim 8 , wherein a length of the magnetic state variable member in the first direction is longer than a length of the magnetic detector element in the first direction.

10. The magnetic sensor according to claim 6 , wherein the first magnetic body has a length in the first direction longer than a length in the second direction.

11. The magnetic sensor according to claim 1 , wherein the variable magnetic field sensing portion further comprises a second magnetic body that is distal in the first direction from the first end portion to the magnetic sensor element.

12. The magnetic sensor according to claim 11 , wherein the magnetic state variable member is arranged so as to be magnetically coupled to the first magnetic body and the second magnetic body in the second state.

13. a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on the one side in the first direction relative to a first end of the first magnetic body, the first end being an end on one side in the first direction, and has a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction, the magnetic state variable member being capable of taking a first state and a second state in which the magnetic state includes at least one of an effective magnetic permeability and a magnetization direction and is different from one another; a magnetic state modulating member that changes the magnetic state of the magnetic state variable member; A variable magnetic field detection unit having a The effective magnetic permeability μ2 of the magnetic state changeable member in the second state in the first direction is higher than the effective magnetic permeability μ1 in the first direction of the magnetic state changeable member in the first state; and is higher than the magnetic permeability μ0 in the first direction of a first material located between the first magnetic body and the magnetic detection element; the magnetic state modulating member and the magnetic state variable member constitute a magnetic control body stacked in a second direction perpendicular to the first direction, the magnetic control body and the magnetic detector element are arranged side by side in the second direction, the magnetic state modulation member has a spin torque generating unit that imparts a spin orbit torque to the magnetic state variable member when a current is applied thereto; A magnetic sensor comprising: a magnetic state of the magnetic state variable member when energized, the magnetic state of the magnetic state variable member being different from the magnetic state of the magnetic state variable member when energized, based on the spin orbit torque from the spin torque generation unit.

14. the variable magnetic field detection unit has a bias magnetic field source that magnetizes the magnetic state variable member along the second direction to such an extent that the magnetization is not rotated by the measurement magnetic field when the magnetic state modulation member is in a non-energized state; When the magnetic state modulating member is in a non-energized state, the magnetic state variable member is in the first state, 14. The magnetic sensor of claim 13, wherein when the magnetic state modulating member is in an electrically conductive state and a current flows in an in-plane direction of a first surface having a normal along the second direction, the magnetic state variable member is in the second state, and in the second state, the magnetic state variable member is subjected to the spin orbit torque and magnetized in a direction opposite to the direction in which the current flows to an extent that the magnetization can be rotated in the in-plane direction of the first surface by a magnetic field based on the measurement magnetic field.

15. The magnetic sensor according to claim 14 , wherein in the second state, the current flowing through the magnetic state modulation member is along a third direction that is in-plane with the first surface and perpendicular to the first direction.

16. 15. The magnetic sensor according to claim 14, wherein the magnetic state modulating member has an antiferromagnetic portion made of antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source.

17. The magnetic sensor according to claim 14 , wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when energized and a permanent magnet.

18. The magnetic sensor of claim 17 , wherein the bias magnetic field source is laminated to the magnetic control body.

19. when the magnetic state modulating member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in a third direction perpendicular to the first direction and the second direction by a magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state, 14. The magnetic sensor of claim 13, wherein the magnetic state variable member is in the second state when the magnetic state modulation member is in a non-energized state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction due to magnetic flux based on the measured magnetic field than in the first state.

20. The magnetic sensor of claim 19, wherein the variable magnetic field detection unit has a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member, and the bias magnetic field received by the magnetic state variable member in the second state is aligned along an in-plane direction of a first surface having a normal along the second direction, and is to an extent that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measured magnetic field.

21. 21. The magnetic sensor according to claim 20, wherein the magnetic state modulating member has an antiferromagnetic portion made of antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source.

22. The magnetic sensor of claim 20 , wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when energized and a permanent magnet.

23. The magnetic sensor of claim 22 , wherein the bias magnetic field source is laminated to the magnetic control body.

24. The magnetic sensor of claim 20 , wherein the bias magnetic field is along a third direction orthogonal to the first direction and the second direction.

25. when the magnetic state modulating member is in an energized state and a current flows along the first direction, the magnetic state variable member is in the first state, and in the first state, the magnetic state variable member is subjected to the spin orbit torque and is magnetized in the first direction and the second direction by a magnetic flux based on the measured magnetic field, and the magnetization of the magnetic state variable member is less likely to rotate by the magnetic flux based on the measured magnetic field than in the second state; 14. The magnetic sensor of claim 13, wherein the magnetic state variable member is in the second state when the magnetic state modulation member is in a non-energized state, and in the second state, the magnetization of the magnetic state variable member is more likely to orient in the first direction due to magnetic flux based on the measured magnetic field than in the first state.

26. The magnetic sensor described in claim 25, wherein the variable magnetic field detection unit has a bias magnetic field source that applies a bias magnetic field to the magnetic state variable member, and the bias magnetic field received by the magnetic state variable member in the second state is along an in-plane direction of a first surface having a normal along the second direction, and is to an extent that the magnetization of the magnetic state variable member can be rotated by a magnetic flux based on the measured magnetic field.

27. 27. The magnetic sensor according to claim 26, wherein the magnetic state modulating member has an antiferromagnetic portion made of an antiferromagnetic material, and exchange coupling between the antiferromagnetic portion and the magnetic state variable member serves as the bias magnetic field source.

28. 27. The magnetic sensor of claim 26, wherein the bias magnetic field source includes at least one of a coil that generates an induced magnetic field when energized, and a permanent magnet.

29. The magnetic sensor of claim 28 , wherein the bias magnetic field source is laminated to the magnetic control body.

30. 27. The magnetic sensor of claim 26, wherein the bias magnetic field is along a third direction orthogonal to the first direction and the second direction.

31. a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on the one side in the first direction relative to a first end of the first magnetic body, the first end being an end on one side in the first direction, and has a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction, the magnetic state variable member being capable of taking a first state and a second state in which the magnetic state includes at least one of an effective magnetic permeability and a magnetization direction and is different from one another; a magnetic state modulating member that changes the magnetic state of the magnetic state variable member; A variable magnetic field detection unit having a magnetic field calculation unit that calculates the measured magnetic field from a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. A magnetic measurement method using a magnetic sensor comprising: a first measurement step of setting the magnetic state variable member to the first state and obtaining the first output while the measurement magnetic field is applied; a second measurement step of setting the magnetic state variable member to the second state and obtaining the second output while the measurement magnetic field is applied; a magnetic field calculation step of calculating the measured magnetic field from the first output and the second output in the magnetic field calculation unit; Equipped with A magnetic measurement method characterized in that the magnetic state modulation member has an antiferromagnetic portion made of antiferromagnetism, and the magnetization of the magnetic state variable member in the first state or the second state is affected by exchange coupling between the antiferromagnetic portion and the magnetic state variable member.

32. a first magnetic body that is magnetized by a measurement magnetic field in a first direction; a magnetic detector element that is located on the one side in the first direction relative to a first end of the first magnetic body, the first end being an end on one side in the first direction, and has a sensitivity axis along the first direction; a magnetic state variable member located on the one side of the first end of the first magnetic body in the first direction, the magnetic state variable member being capable of taking a first state and a second state in which the magnetic state includes at least one of an effective magnetic permeability and a magnetization direction and is different from one another; a magnetic state modulating member that changes the magnetic state of the magnetic state variable member; A variable magnetic field detection unit having a magnetic field calculation unit that calculates the measured magnetic field from a first output from the variable magnetic field detection unit when the magnetic state variable member is in the first state and a second output from the variable magnetic field detection unit when the magnetic state variable member is in the second state. A magnetic measurement method using a magnetic sensor comprising: a first measurement step of setting the magnetic state variable member to the first state and obtaining the first output while the measurement magnetic field is applied; a second measurement step of setting the magnetic state variable member to the second state and obtaining the second output while the measurement magnetic field is applied; a magnetic field calculation step of calculating the measured magnetic field from the first output and the second output in the magnetic field calculation unit; Equipped with The effective magnetic permeability μ2 of the magnetic state changeable member in the second state in the first direction is higher than the effective magnetic permeability μ1 in the first direction of the magnetic state changeable member in the first state; and is higher than the magnetic permeability μ0 in the first direction of a first material located between the first magnetic body and the magnetic detection element; the magnetic state modulating member and the magnetic state variable member constitute a magnetic control body stacked in a second direction perpendicular to the first direction, the magnetic control body and the magnetic detector element are arranged side by side in the second direction, the magnetic state modulation member has a spin torque generating unit that imparts a spin orbit torque to the magnetic state variable member when a current is applied thereto; A magnetic measurement method, characterized in that the magnetic state of the magnetic state variable member when current is applied differs from the magnetic state when current is not applied, based on the spin orbit torque from the spin torque generation unit.

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