SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM

Abstract

To provide a substrate processing method and a substrate processing system that make an alarm caused by an inter-device error be hardly generated.SOLUTION: A substrate processing method includes the steps of: making fluid be discharged from a fluid supply nozzle to a substrate; determining whether or not a measured value of a flow rate of the fluid discharged from the fluid supply nozzle is out of an upper limit allowable range (UA) or a lower limit allowable range (LA); and, when it is determined that the measured value of the flow rate of the fluid is out of the upper limit allowable range (UA) or the lower limit allowable range (LA), causing an alarm. The upper limit allowable range (UA) is a range taking the larger value of a first upper limit value (UL1) and a second upper limit value (UL2) as its upper limit value. The lower limit allowable range (LA) is a range taking the smaller value of a first lower limit value (LL1) and a second lower limit value (LL2) as its lower limit value.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing system. [Background technology]

[0002] A cleaning apparatus, which is a type of substrate processing system, is disclosed in Patent Document 1. The cleaning apparatus of Patent Document 1 includes a chemical liquid supply line, a flow meter, a valve, a monitoring tool, a control unit, and a discharge unit.

[0003] The discharge unit discharges the chemical liquid onto the substrate. The chemical liquid supply line supplies the chemical liquid to the discharge unit. The valve and flow meter are provided on the chemical liquid supply line. The flow meter measures the chemical liquid flow rate. The control unit sends a signal to the valve to open the valve. The monitoring tool determines whether the chemical liquid flow rate exceeds the upper reference value or falls below the lower reference value based on the measurement result of the flow meter. The monitoring tool issues an alarm when the chemical liquid flow rate exceeds the upper reference value or falls below the lower reference value. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-177386 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the cleaning apparatus (substrate processing system) of Patent Document 1, the upper and lower reference limits are constant, so when the target value of the chemical flow rate is large, an alarm is likely to be issued due to inter-apparatus error. In other words, there is a possibility that an alarm will be issued frequently. Inter-apparatus error includes, for example, errors in the devices installed in the cleaning apparatus. When an alarm is issued frequently, the cleaning process (substrate processing) is stopped frequently, resulting in reduced productivity.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing method and a substrate processing system that make it difficult for an alarm due to an error between apparatuses to be generated. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing method is a method for processing a substrate using a substrate processing system. The substrate processing method includes the steps of discharging a fluid onto the substrate from a fluid supply nozzle, determining whether a measured value of a flow rate of the fluid discharged from the fluid supply nozzle exceeds an upper or lower allowable range, and issuing an alarm when it is determined that the measured value exceeds the upper or lower allowable range. The upper allowable range has an upper limit equal to the larger of a first upper limit value and a second upper limit value. The first upper limit value represents a value obtained by multiplying a target value for the flow rate of the fluid by a first predetermined percentage and adding the result to the target value. The second upper limit value represents a value obtained by adding a first offset value to the target value. The lower allowable range has a lower limit equal to the smaller of a first lower limit value and a second lower limit value. The first lower limit value represents a value obtained by multiplying the target value by a second predetermined percentage and subtracting the result from the target value. The second lower limit value indicates a value obtained by subtracting a second offset value from the target value.

[0008] In one embodiment, the step of making the determination includes a step of determining whether the target value is greater than or equal to a first threshold value, and, if it is determined that the target value is greater than or equal to the first threshold value, a step of determining whether the measured value exceeds the upper limit allowable range based on whether the measured value is greater than the first upper limit value.

[0009] In one embodiment, the step of making the determination includes a step of determining whether the target value is greater than or equal to a first threshold value, and, if it is determined that the target value is greater than or equal to the first threshold value, a step of determining whether the measured value exceeds the upper limit allowable range based on whether the measured value is greater than both the first upper limit value and the second upper limit value.

[0010] In one embodiment, the step of making the determination includes a step of determining whether the target value is equal to or greater than a second threshold value, and, if it is determined that the target value is equal to or greater than the second threshold value, a step of determining whether the measured value exceeds the lower limit allowable range based on whether the measured value is smaller than the first lower limit value.

[0011] In one embodiment, the step of making the determination includes a step of determining whether the target value is equal to or greater than a second threshold value, and, if it is determined that the target value is equal to or greater than the second threshold value, a step of determining whether the measured value exceeds the lower limit allowable range based on whether the measured value is smaller than both the first lower limit value and the second lower limit value.

[0012] In one embodiment, the step of making the determination includes a step of determining whether the measurement value exceeds the upper limit allowable range based on whether the measurement value is greater than the second upper limit value when it is determined that the target value is not greater than the first threshold value.

[0013] In one embodiment, the step of making the determination includes a step of determining whether the measured value exceeds the upper limit allowable range depending on whether the measured value is greater than both the first upper limit value and the second upper limit value when it is determined that the target value is not greater than or equal to the first threshold value.

[0014] In one embodiment, the step of making the determination includes a step of determining whether the target value is equal to or greater than a second threshold value, and, if it is determined that the target value is not equal to or greater than the second threshold value, a step of determining whether the measured value exceeds the lower limit allowable range based on whether the measured value is smaller than the second lower limit value.

[0015] In one embodiment, the step of making the determination includes a step of determining whether the target value is equal to or greater than a second threshold value, and, if it is determined that the target value is not equal to or greater than the second threshold value, a step of determining whether the measured value exceeds the lower limit allowable range based on whether the measured value is smaller than both the first lower limit value and the second lower limit value.

[0016] In one embodiment, the step of making the determination includes the steps of determining whether the measured value is greater than or smaller than the target value; if it is determined that the measured value is greater than the target value, determining whether the measured value exceeds the upper limit allowable range based on whether the measured value is greater than both the first upper limit value and the second upper limit value; and if it is determined that the measured value is smaller than the target value, determining whether the measured value exceeds the lower limit allowable range based on whether the measured value is smaller than both the first lower limit value and the second lower limit value.

[0017] In one embodiment, the substrate processing method further includes setting the target value. The substrate processing system includes a plurality of chambers that accommodate the substrate. The fluid supply nozzle includes a plurality of gas supply nozzles that discharge a gas as the fluid. The plurality of gas supply nozzles are disposed within the plurality of chambers. The target value includes a plurality of first target values ​​for the flow rate of the gas discharged from each of the plurality of gas supply nozzles. The step of setting the target value includes setting the plurality of first target values.

[0018] In one embodiment, the step of setting the target value includes a step of correcting an initial target value for the gas flow rate for each of the gas supply nozzles based on a plurality of first correction values ​​to set the plurality of first target values, wherein the plurality of first correction values ​​are set based on the flow rate of the gas discharged from a specific one of the plurality of gas supply nozzles.

[0019] In one embodiment, the substrate processing method further includes setting the target value. The fluid supply nozzle includes a processing liquid supply nozzle that discharges a processing liquid as the fluid. The target value includes a second target value for a flow rate of the processing liquid discharged from the processing liquid supply nozzle. The setting of the target value includes correcting an initial target value for the flow rate of the processing liquid based on a second correction value to set the second target value. The second correction value is set based on the flow rate of the processing liquid discharged from the processing liquid supply nozzle installed in a specific one of the plurality of substrate processing systems.

[0020] According to one aspect of the present invention, a substrate processing system processes a substrate. The substrate processing system includes a fluid supply nozzle, a flow rate measuring unit, a flow rate control unit, an alarm generating unit, and an alarm control unit. The fluid supply nozzle discharges a fluid onto the substrate. The flow rate measuring unit measures the flow rate of the fluid discharged from the fluid supply nozzle. The flow rate control unit controls the flow rate of the fluid supplied to the fluid supply nozzle based on a preset target value. The alarm generating unit generates an alarm. When the flow rate measured by the flow rate measuring unit exceeds an upper limit allowable range or a lower limit allowable range, the alarm generating unit generates the alarm. The upper limit allowable range is a range whose upper limit is the larger of a first upper limit value and a second upper limit value. The first upper limit value indicates a value obtained by multiplying the target value by a first predetermined ratio and adding the value to the target value. The second upper limit value indicates a value obtained by adding a first offset value to the target value. The lower limit tolerance range is a range with a lower limit set to the smaller of a first lower limit value and a second lower limit value. The first lower limit value indicates a value obtained by subtracting a value obtained by multiplying the target value by a second predetermined ratio from the target value. The second lower limit value indicates a value obtained by subtracting a second offset value from the target value.

[0021] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a first threshold. If the warning control unit determines that the target value is equal to or greater than the first threshold, the warning control unit determines whether the measured value is greater than the first upper limit. If the warning control unit determines that the measured value is greater than the first upper limit, the warning control unit determines that the measured value exceeds the upper limit allowable range.

[0022] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a first threshold. If the warning control unit determines that the target value is equal to or greater than the first threshold, the warning control unit determines whether the measured value is greater than both the first upper limit value and the second upper limit value. If the warning control unit determines that the measured value is greater than both the first upper limit value and the second upper limit value, the warning control unit determines that the measured value exceeds the upper limit allowable range.

[0023] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a second threshold. If the warning control unit determines that the target value is equal to or greater than the second threshold, the warning control unit determines whether the measured value is smaller than the first lower limit. If the warning control unit determines that the measured value is smaller than the first lower limit, the warning control unit determines that the measured value exceeds the lower limit allowable range.

[0024] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a second threshold. If the warning control unit determines that the target value is equal to or greater than the second threshold, the warning control unit determines whether the measured value is smaller than both the first lower limit and the second lower limit. If the warning control unit determines that the measured value is smaller than both the first lower limit and the second lower limit, the warning control unit determines that the measured value exceeds the lower limit allowable range.

[0025] In one embodiment, when the warning control unit determines that the target value is not equal to or greater than the first threshold value, the warning control unit determines whether the measurement value is greater than the second upper limit value. When the warning control unit determines that the measurement value is greater than the second upper limit value, the warning control unit determines that the measurement value exceeds the upper limit allowable range.

[0026] In one embodiment, when the warning control unit determines that the target value is not equal to or greater than the first threshold value, the warning control unit determines whether the measured value is greater than both the first upper limit value and the second upper limit value. When the warning control unit determines that the measured value is greater than both the first upper limit value and the second upper limit value, the warning control unit determines that the measured value exceeds the upper limit allowable range.

[0027] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a second threshold. If the warning control unit determines that the target value is not equal to or greater than the second threshold, the warning control unit determines whether the measured value is smaller than the second lower limit. If the warning control unit determines that the measured value is smaller than the second lower limit, the warning control unit determines that the measured value exceeds the lower limit allowable range.

[0028] In one embodiment, the warning control unit determines whether the target value is equal to or greater than a second threshold. If the warning control unit determines that the target value is not equal to or greater than the second threshold, the warning control unit determines whether the measured value is smaller than both the first lower limit and the second lower limit. If the warning control unit determines that the measured value is smaller than both the first lower limit and the second lower limit, the warning control unit determines that the measured value exceeds the lower limit allowable range.

[0029] In one embodiment, the alarm control unit determines whether the measurement value is greater than or smaller than the target value. If the alarm control unit determines that the measurement value is greater than the target value, it determines whether the measurement value is greater than both the first upper limit value and the second upper limit value. If the alarm control unit determines that the measurement value is greater than both the first upper limit value and the second upper limit value, it determines that the measurement value exceeds the upper limit allowable range. If the alarm control unit determines that the measurement value is smaller than the target value, it determines whether the measurement value is smaller than both the first lower limit value and the second lower limit value. If the alarm control unit determines that the measurement value is smaller than both the first lower limit value and the second lower limit value, it determines that the measurement value exceeds the lower limit allowable range.

[0030] In one embodiment, the substrate processing system further includes a target value setting unit and a plurality of chambers. The target value setting unit sets the target value. The plurality of chambers accommodate the substrates. The fluid supply nozzle includes a plurality of gas supply nozzles that discharge gas as the fluid. The plurality of gas supply nozzles of nozzles are disposed in the chambers, and the target values ​​include a plurality of first target values ​​for the flow rates of the gas discharged from each of the gas supply nozzles, and the target value setting unit sets the plurality of first target values.

[0031] In one embodiment, the target value setting unit corrects an initial target value for the gas flow rate for each of the gas supply nozzles based on a plurality of first correction values, and sets the plurality of first target values, The plurality of first correction values ​​are set based on the flow rate of the gas discharged from a specific one of the plurality of gas supply nozzles.

[0032] In one embodiment, the substrate processing system further includes a target value setting unit that sets the target value. The fluid supply nozzle includes a processing liquid supply nozzle that discharges a processing liquid as the fluid. The target value includes a second target value for a flow rate of the processing liquid discharged from the processing liquid supply nozzle. The target value setting unit corrects an initial target value for the flow rate of the processing liquid based on a second correction value to set the second target value. The second correction value is set based on the flow rate of the processing liquid discharged from the processing liquid supply nozzle installed in a specific one of the plurality of substrate processing systems. [Effects of the Invention]

[0033] According to the substrate processing method and the substrate processing system of the present invention, an alarm caused by an error between the apparatuses is unlikely to be issued. [Brief explanation of the drawings]

[0034] [Figure 1] 1 is a schematic diagram showing a configuration of a substrate processing system according to an embodiment of the present invention. [Figure 2] 1 is a schematic view of a processing unit included in a substrate processing system according to an embodiment of the present invention. [Figure 3] 1 is a block diagram showing a part of a configuration of a substrate processing system according to an embodiment of the present invention. [Figure 4] FIG. 10 is a diagram showing an upper allowable range UA and a lower allowable range LA. [Figure 5] 1 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. [Figure 6] 1 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. [Figure 7] 10 is a flowchart showing a part of a first example of an alarm process. [Figure 8] 10 is a flowchart showing another part of the first example of the warning process. [Figure 9] 10 is a flowchart showing a part of a second example of the warning process. [Figure 10]10 is a flowchart showing another part of the second example of the warning process. [Figure 11] 10 is a flowchart showing a part of a third example of the warning process. [Figure 12] 10 is a flowchart showing another part of the third example of the warning process. [Figure 13] 1A is a diagram showing a part of recipe data stored in a storage unit, and FIG. 1B is a diagram showing a correction table stored in the storage unit. [Figure 14] 1A is a diagram illustrating a system for acquiring a first correction value, and FIG. 1B is a flowchart illustrating a process executed by an information processing device. [Figure 15] FIG. 10 illustrates a system for obtaining a second correction value. [Figure 16] 10 is a flowchart illustrating a process executed by the information processing device. [Figure 17] 1A is a flowchart illustrating a substrate processing method according to an embodiment of the present invention, and FIG. 1B is a flowchart illustrating a process for setting a target value. [Figure 18] 10A and 10B are flowcharts illustrating a process for setting a target value for a gas discharge flow rate, and a process for setting a target value for a treatment liquid discharge flow rate, respectively; [Figure 19] 1 is a diagram showing a configuration of a substrate processing system according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0035] Hereinafter, embodiments of a substrate processing method and a substrate processing system according to the present invention will be described with reference to the drawings (FIGS. 1 to 19). However, the present invention is not limited to the following embodiments. Note that duplicated explanations may be omitted as appropriate. In addition, the same or equivalent parts in the drawings will be designated by the same reference numerals, and explanations will not be repeated.

[0036] The "substrates" to be processed by the substrate processing method and substrate processing system according to the present invention can be various substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. The following description of this embodiment will primarily focus on a substrate processing method and substrate processing system for processing disk-shaped semiconductor wafers. However, the substrate processing method and substrate processing system according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing system according to the present invention can be applied to substrates of various shapes.

[0037] First, a substrate processing system 100 of this embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram showing the configuration of the substrate processing system 100 of this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing system 100. The substrate processing system 100 processes substrates W. More specifically, the substrate processing system 100 is a single-wafer type apparatus that processes substrates W one by one. For example, the substrate processing system 100 processes the substrates W by performing at least one of etching, cleaning, surface treatment, imparting properties, forming a treatment film, and removing at least a portion of a film on the substrates W.

[0038] As shown in FIG. 1, the substrate processing system 100 includes a plurality of processing units 1 (in this embodiment, the first processing unit #1 to the eighth processing unit #8), a fluid cabinet 110, a plurality of fluid boxes 100A, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0039] Each load port LP accommodates a stack of substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the processing unit 1. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to transfer the substrate W indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0040] The processing units 1 form a plurality of towers TW (four towers TW in this embodiment) that are arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of processing units 1 (two processing units 1 in this embodiment) stacked one above the other. Each processing unit 1 supplies a processing liquid to a substrate W to process the substrate W.

[0041] The fluid cabinet 110 contains a fluid. The fluid is supplied from the fluid cabinet 110 to each fluid box 100A. Each fluid box 100A corresponds to one of the multiple towers TW. The fluid box 100A supplies the fluid to all processing units 1 included in the corresponding tower TW.

[0042] In this embodiment, the fluid includes a gas and a processing liquid. The gas is, for example, an inert gas such as nitrogen (N). The processing liquid is, for example, a chemical liquid (e.g., an etching liquid). The chemical liquid is, for example, hydrofluoric acid (HF), hydrofluoric nitric acid (a mixture of hydrofluoric acid and nitric acid (HNO)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (HPO), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, dilute hydrofluoric acid (DHF), ammonia water, hydrogen peroxide, organic acid (e.g., citric acid, oxalic acid), organic alkali (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid / hydrogen peroxide mixture (SPM), ammonia / hydrogen peroxide mixture (SC1), hydrochloric acid / hydrogen peroxide mixture (SC2), surfactant, or corrosion inhibitor. The types of gas and processing liquid are not particularly limited as long as they can be used to process the substrate W. For example, the processing liquid may be deionized water (DIW).

[0043] Next, the control device 101 will be described. The control device 101 controls the operation of each unit of the substrate processing system 100. For example, the control device 101 controls the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a memory unit 103.

[0044] The control unit 102 includes a processor. The control unit 102 includes, for example, a central processing unit (CPU) or a micro processing unit (MPU). Alternatively, the control unit 102 may include a general-purpose computing device.

[0045] The storage unit 103 stores data and computer programs. The data includes recipe data RD. The recipe data RD includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0046] The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may include removable media. The control unit 102 controls the operation of each unit of the substrate processing system 100 based on the computer programs and data stored in the storage unit 103.

[0047] Next, the substrate processing system 100 of this embodiment will be further described with reference to Figures 1 and 2. Figure 2 is a schematic diagram of a processing unit 1 included in the substrate processing system 100 of this embodiment. In detail, Figure 2 is a schematic cross-sectional view of the processing unit 1.

[0048] 2, processing unit 1 includes chamber 2, spin chuck 3, spin motor unit 4, shielding plate 5, gas supply nozzle 6, processing liquid supply nozzle 7, rotation unit 51, lifting unit 52, and guard unit 8. Substrate processing system 100 also includes gas supply piping 61, mass flow controller 62, on-off valve 63, processing liquid supply piping 71, flow rate control valve 72, flow rate sensor 73, and on-off valve 74. Control device 101 (controller 102) controls spin chuck 3, spin motor unit 4, rotation unit 51, lifting unit 52, guard unit 8, mass flow controller 62, on-off valve 63, flow rate control valve 72, and on-off valve 74.

[0049] The chamber 2 has a generally box-like shape and accommodates the substrate W, the spin chuck 3, the spin motor unit 4, the shielding plate 5, the gas supply nozzle 6, the processing liquid supply nozzle 7, the rotation unit 51, the lifting unit 52, the guard unit 8, a portion of the gas supply pipe 61, and a portion of the processing liquid supply pipe 71. The other portions of the gas supply pipe 61, the processing liquid supply pipe 71, the mass flow controller 62, the on-off valve 63, the flow rate control valve 72, the flow rate sensor 73, and the on-off valve 74 are accommodated in the corresponding fluid boxes 100A described with reference to FIG.

[0050] The spin chuck 3 holds the substrate W horizontally. Specifically, the spin chuck 3 has a plurality of chuck members 31 and a spin base 32. The plurality of chuck members 31 are provided on the spin base 32 along the periphery of the substrate W. The plurality of chuck members 31 hold the substrate W in a horizontal position. The spin base 32 is substantially disk-shaped and supports the plurality of chuck members 31 in a horizontal position.

[0051] The spin motor unit 4 rotates the substrate W and the spin chuck 3 together around the rotation axis AX. The rotation axis AX extends in the up-down direction. In this embodiment, the rotation axis AX extends in a substantially vertical direction. More specifically, the spin motor unit 4 rotates the spin base 32 around the rotation axis AX. Therefore, the spin base 32 rotates around the rotation axis AX. As a result, the substrate W held by the spin chuck 3 rotates around the rotation axis AX.

[0052] The spin motor unit 4 has a motor body 41 and a shaft 42. The shaft 42 is coupled to the spin base 32. The motor body 41 rotates the shaft 42, which in turn rotates the spin base 32. The motor body 41 is, for example, an electric motor.

[0053] The shielding plate 5 has a disk portion 5a and a cylindrical portion 5b. The disk portion 5a is disk-shaped and has a diameter approximately the same as or larger than that of the substrate W. The cylindrical portion 5b is provided at the center of the disk portion 5a (the center when the shielding plate 5 is viewed in a plan view) and protrudes upward from the disk portion 5a. The cylindrical portion 5b is cylindrical and has a through hole extending in the vertical direction. The disk portion 5a has a through hole in its center that also extends in the vertical direction. The through hole in the disk portion 5a communicates with the through hole in the cylindrical portion 5b.

[0054] The shielding plate 5 is disposed approximately horizontally above the spin chuck 3. The shielding plate 5 can be moved to any position (height) between the lower position and the upper position. When the shielding plate 5 is in the close position, the space between the shielding plate 5 and the upper surface of the substrate W is isolated from the surrounding atmosphere (outside the space between the shielding plate 5 and the substrate W) by the shielding plate 5. The close position is a position sufficiently close to the surface of the substrate W.

[0055] The rotation unit 51 rotates the shielding plate 5 around the rotation axis AX. The rotation unit 51 includes, for example, an electric motor. The electric motor applies a driving force to the shielding plate 5 in the rotation direction around the rotation axis AX. The lifting unit 52 raises and lowers the shielding plate 5. Specifically, the lifting unit 52 moves the shielding plate 5 to any position (height) between a lower position and an upper position. The lifting unit 52 includes, for example, a ball screw mechanism and an electric motor that applies a driving force to the ball screw mechanism.

[0056] The gas supply nozzle 6 penetrates the shielding plate 5 in the vertical direction. More specifically, it is inserted into the through-hole of the cylindrical portion 5b and the through-hole of the disk portion 5a. The outlet of the gas supply nozzle 6 is exposed from the lower surface of the shielding plate 5. The gas supply nozzle 6 discharges gas toward the substrate W. More specifically, when the shielding plate 5 is in the close position, gas is discharged from the gas supply nozzle 6 toward the substrate W. The gas supply nozzle 6 is an example of a fluid supply nozzle.

[0057] Similarly, the processing liquid supply nozzle 7 penetrates the shielding plate 5 in the vertical direction. More specifically, it is inserted into the through-hole of the cylindrical portion 5b and the through-hole of the disk portion 5a. The discharge port of the processing liquid supply nozzle 7 is exposed from the lower surface of the shielding plate 5. The processing liquid supply nozzle 7 discharges the processing liquid toward the substrate W. More specifically, when the shielding plate 5 is in the close position, the processing liquid is discharged from the processing liquid supply nozzle 7 toward the substrate W. The processing liquid supply nozzle 7 is an example of a fluid supply nozzle.

[0058] The gas supply pipe 61 communicates with the gas supply nozzle 6. The gas supply pipe 61 supplies gas to the gas supply nozzle 6 by circulating the gas up to the gas supply nozzle 6. A mass flow controller 62 and an opening / closing valve 63 are provided on the gas supply pipe 61.

[0059] The mass flow controller 62 controls the flow rate of the gas supplied to the gas supply nozzle 6. Specifically, the mass flow controller 62 controls the flow rate of the gas flowing through the gas supply pipe 61. The mass flow controller 62 controls the flow rate of the gas flowing through the gas supply pipe 61, thereby controlling the flow rate of the gas discharged from the gas supply nozzle 6. Hereinafter, the flow rate of the gas flowing through the gas supply pipe 61 may be referred to as the "gas flow rate." Similarly, the flow rate of the gas discharged from the gas supply nozzle 6 may be referred to as the "gas discharge flow rate."

[0060] The mass flow controller 62 has a flow control valve 621 and a flow sensor 622. The flow control valve 621 controls the gas flow rate. That is, the flow control valve 621 controls the flow rate of the gas supplied to the gas supply nozzle 6. The flow control valve 621 controls the gas flow rate, thereby controlling the gas discharge flow rate. The flow sensor 622 measures the gas discharge flow rate. Specifically, the flow sensor 622 measures the gas discharge flow rate by measuring the gas flow rate. The flow control valve 621 is an example of a flow control unit. The flow sensor 622 is an example of a flow measurement unit.

[0061] The control unit 102 sets a target value of the gas discharge flow rate (target value of gas flow rate) in the mass flow controller 62. The mass flow controller 62 controls the gas discharge flow rate by driving the flow rate control valve 621 based on the target value of the gas discharge flow rate. More specifically, the mass flow controller 62 drives the flow rate control valve 621 so that the measurement result of the flow rate sensor 622 (measured value of the gas flow rate) matches the target value of the gas discharge flow rate.

[0062] The on-off valve 63 can be switched between an open state and a closed state. When the on-off valve 63 is in the open state, gas flows through the gas supply pipe 61 to the gas supply nozzle 6. When the on-off valve 63 is in the closed state, the flow of gas through the gas supply pipe 61 stops.

[0063] The processing liquid supply pipe 71 communicates with the processing liquid supply nozzle 7. The processing liquid supply pipe 71 supplies the processing liquid to the processing liquid supply nozzle 7 by circulating the processing liquid up to the processing liquid supply nozzle 7. The processing liquid supply pipe 71 is provided with a flow rate control valve 72, a flow rate sensor 73, and an opening / closing valve 74.

[0064] The flow rate control valve 72 controls the flow rate of the processing liquid supplied to the processing liquid supply nozzle 7. Specifically, the flow rate control valve 72 controls the flow rate of the processing liquid flowing through the processing liquid supply pipe 71. The flow rate control valve 72 controls the flow rate of the processing liquid flowing through the processing liquid supply pipe 71, thereby controlling the flow rate of the processing liquid discharged from the processing liquid supply nozzle 7. The flow rate control valve 72 is an example of a flow rate control unit. Hereinafter, the flow rate of the processing liquid flowing through the processing liquid supply pipe 71 may be referred to as the "processing liquid flow rate." Similarly, the flow rate of the processing liquid discharged from the processing liquid supply nozzle 7 may be referred to as the "processing liquid discharge flow rate."

[0065] The flow rate sensor 73 measures the discharge flow rate of the processing liquid. Specifically, the flow rate sensor 73 measures the discharge flow rate of the processing liquid by measuring the flow rate of the processing liquid. The flow rate sensor 73 is an example of a flow rate measuring unit. The control unit 102 controls the discharge flow rate of the processing liquid by driving the flow rate control valve 72 based on the target value of the discharge flow rate of the processing liquid (target value of the flow rate of the processing liquid). More specifically, the control unit 102 drives the flow rate control valve 72 so that the measurement result of the flow rate sensor 73 (measured value of the flow rate of the processing liquid) matches the target value of the discharge flow rate of the processing liquid.

[0066] The on-off valve 74 can be switched between an open state and a closed state. When the on-off valve 74 is in the open state, the processing liquid flows through the processing liquid supply pipe 71 to the processing liquid supply nozzle 7. When the on-off valve 74 is in the closed state, the processing liquid stops flowing through the processing liquid supply pipe 71.

[0067] The guard portion 8 has a generally cylindrical shape and is disposed around the spin chuck 3 to receive the processing liquid discharged from the substrate W after use.

[0068] Next, the substrate processing system 100 of this embodiment will be further described with reference to Figures 1 to 3. Figure 3 is a block diagram showing a part of the configuration of the substrate processing system 100 of this embodiment. As shown in Figure 3, the substrate processing system 100 further includes an alarm generating unit 9 and an input unit 104.

[0069] The alarm generating unit 9 is controlled by the control device 101 (control unit 102) to generate an alarm. The alarm generating unit 9 includes, for example, at least one of a display, a speaker, and a lamp. The control unit 102 is an example of an alarm control unit.

[0070] The control unit 102 causes the alarm generating unit 9 to generate an alarm based on the measurement result (measured value of the gas flow rate) of the flow rate sensor 622. In detail, the control unit 102 causes the alarm generating unit 9 to generate an alarm when the measured value of the gas flow rate exceeds a first upper limit allowable range or a first lower limit allowable range. Information indicating the first upper limit allowable range and the first lower limit allowable range is stored in the memory unit 103.

[0071] Similarly, the control unit 102 causes the alarm generating unit 9 to generate an alarm based on the measurement result (measured value of the processing liquid flow rate) of the flow rate sensor 73. More specifically, the control unit 102 causes the alarm generating unit 9 to generate an alarm when the measured value of the processing liquid flow rate exceeds the second upper limit allowable range or the second lower limit allowable range. Information indicating the second upper limit allowable range and the second lower limit allowable range is stored in the memory unit 103.

[0072] The input unit 104 accepts input from an operator and outputs information indicating the input result to the control unit 102. For example, the input unit 104 accepts input of information instructing the substrate processing system 100 to start substrate processing. The input unit 104 includes, for example, a touch panel and a pointing device.

[0073] Hereinafter, when it is not necessary to distinguish between the gas and the processing liquid, the gas and the processing liquid may be referred to as "fluid." Similarly, when it is not necessary to distinguish between the gas flow rate and the processing liquid flow rate, the gas flow rate and the processing liquid flow rate may be referred to as "fluid flow rate." When it is not necessary to distinguish between the gas discharge flow rate and the processing liquid discharge flow rate, the gas discharge flow rate and the processing liquid discharge flow rate may be referred to as "fluid discharge flow rate." Furthermore, when it is not necessary to distinguish between the first upper limit allowable range and the second upper limit allowable range, the first upper limit allowable range and the second upper limit allowable range may be referred to as "upper limit allowable range." Similarly, when it is not necessary to distinguish between the first lower limit allowable range and the second lower limit allowable range, the first lower limit allowable range and the second lower limit allowable range may be referred to as "lower limit allowable range."

[0074] Next, the upper limit allowable range UA and the lower limit allowable range LA will be described with reference to Fig. 4. Fig. 4 is a diagram showing the upper limit allowable range UA and the lower limit allowable range LA. In Fig. 4, the horizontal axis represents the setting value set in the substrate processing system 100. In other words, the horizontal axis represents the setting value stored in the memory unit 103. The vertical axis represents the measured value of the fluid flow rate.

[0075] As shown in FIG. 4, the upper limit allowable range UA indicates a range in which the upper limit value is the larger of the first upper limit value UL1 and the second upper limit value UL2. The first upper limit value UL1 indicates a value obtained by multiplying the target value FT of the fluid discharge flow rate by a first predetermined ratio and adding the result to the target value FT. The second upper limit value UL2 indicates a value obtained by adding a first offset value to the target value FT of the fluid discharge flow rate. The first predetermined ratio is, for example, 50%. The first offset value is a constant value that indicates an arbitrary value.

[0076] Specifically, in a region where the target value FT of the fluid discharge flow rate is greater than the first threshold value UT, the upper limit of the upper allowable range UA is the first upper limit value UL1. On the other hand, in a region where the target value FT of the fluid discharge flow rate is smaller than the first threshold value UT, the upper limit of the upper allowable range UA is the second upper limit value UL2. When the target value FT of the fluid discharge flow rate is the same as the first threshold value UT, the first upper limit value UL1 and the second upper limit value UL2 are the same value, so the upper limit of the upper allowable range UA is set to one of the first upper limit value UL1 and the second upper limit value UL2. The memory unit 103 stores the target value FT of the fluid discharge flow rate, the first upper limit value UL1, the second upper limit value UL2, and the first threshold value UT as setting values.

[0077] The lower limit tolerance LA indicates a range with the smaller of the first lower limit value LL1 and the second lower limit value LL2 as the lower limit value. The first lower limit value LL1 indicates a value obtained by subtracting the target value FT of the fluid discharge flow rate from the product of multiplying the target value FT by a second predetermined ratio. The second lower limit value LL2 indicates a value obtained by subtracting a second offset value from the target value FT of the fluid discharge flow rate. The second predetermined ratio indicates the same value as the first predetermined ratio. For example, the second predetermined ratio indicates 50%. The second offset value is a constant value that indicates an arbitrary value. The second offset value may indicate the same value as the first offset value, or may indicate a different value.

[0078] Specifically, in a region where the target value FT of the fluid discharge flow rate is greater than the second threshold value LT, the lower limit of the lower limit allowable range LA is the first lower limit value LL1. On the other hand, in a region where the target value FT of the fluid discharge flow rate is smaller than the second threshold value LT, the lower limit of the lower limit allowable range LA is the second lower limit value LL2. When the target value FT of the fluid discharge flow rate is the same as the second threshold value LT, the first lower limit value LL1 and the second lower limit value LL2 are the same value, so the lower limit of the lower limit allowable range LA is one of the first lower limit value LL1 and the second lower limit value LL2. The memory unit 103 further stores the first lower limit value LL1, the second lower limit value LL2, and the second threshold value LT as setting values.

[0079] As described with reference to Fig. 3, the control unit 102 causes the alarm generating unit 9 to generate an alarm when the measured value of the fluid flow rate exceeds the upper allowable range UA or the lower allowable range LA. In other words, the control unit 102 causes the alarm generating unit 9 to generate an alarm when the measured value of the fluid flow rate is within the first alarm region UK or the second alarm region LK. The first alarm region UK indicates the region outside the upper allowable range UA. The second alarm region LK indicates the region outside the lower allowable range LA.

[0080] Next, a substrate processing method executed by the substrate processing system 100 will be described with reference to Figures 1 to 6. Figure 5 is a flowchart showing the substrate processing method of this embodiment. In detail, Figure 5 shows the processing executed by the control unit 102. The substrate processing method of this embodiment includes processing of steps S21 to S28.

[0081] 5 is started by an operator operating the input unit 104. First, the control unit 102 controls the indexer robot IR and the center robot CR so that the substrate W is loaded into the chamber 2 of the processing unit 1 (step S21). The control unit 102 causes the spin chuck 3 to hold the substrate W loaded into the chamber 2.

[0082] When the substrate W is held by the spin chuck 3, the control unit 102 causes the spin motor unit 4 to rotate the spin chuck 3. This starts the rotation of the substrate W (step S22).

[0083] After the substrate W starts to rotate, the control unit 102 controls the lifting unit 52 to lower the shielding plate 5 to the close position (step S23). Then, the opening / closing valve 63 is opened to discharge gas from the gas supply nozzle 6 (step S24). At this time, the mass flow controller 62 drives the flow control valve 621 based on the measurement result of the flow sensor 622 so that the gas discharge flow rate coincides with the target value.

[0084] The gas discharged from the gas supply nozzle 6 is supplied to the space between the upper surface of the substrate W and the lower surface of the shielding plate 5. As a result, the atmosphere around the upper surface of the substrate W is replaced with the gas supplied from the gas supply nozzle 6. Note that the gas supply nozzle 6 continues to discharge the gas until the shielding plate 5 is raised from the close position.

[0085] After the ambient atmosphere around the upper surface of the substrate W is replaced with the gas supplied from the gas supply nozzle 6, the control unit 102 opens the on-off valve 74 to discharge the processing liquid from the processing liquid supply nozzle 7 (step S25). At this time, the control unit 102 drives the flow rate control valve 72 based on the measurement result of the flow rate sensor 73 so that the processing liquid discharge flow rate coincides with the target value.

[0086] The processing liquid is supplied to the substrate W, whereby the substrate W is processed by the processing liquid. After the processing liquid has been supplied for a predetermined period of time, the control unit 102 closes the on-off valve 74 to stop the supply of the processing liquid. Furthermore, after the processing liquid has been supplied for a predetermined period of time, the control unit 102 closes the on-off valve 63 to stop the supply of gas.

[0087] The control unit 102 stops the supply of the processing liquid and gas, and then raises the shielding plate 5 (step S26). After raising the shielding plate 5, the control unit 102 controls the spin motor unit 4 to dry the substrate W (step S27).

[0088] Specifically, the control unit 102 increases the rotation speed of the substrate W. As a result, a large centrifugal force is applied to the processing liquid on the substrate W, and the processing liquid adhering to the substrate W is thrown off around the substrate W. In this way, the processing liquid is removed from the substrate W, and the substrate W is dried. The control unit 102 stops the rotation of the substrate W by the spin motor unit 4, for example, after a predetermined time has elapsed since the high-speed rotation of the substrate W began.

[0089] After drying the substrate W, the control unit 102 releases the substrate W from the spin chuck 3 and causes the indexer robot IR to unload the substrate W from the chamber 2 (step S28). Thereafter, the control unit 102 controls the indexer robot IR and the center robot CR so that the substrate W is transported to one of the plurality of load ports LP. As a result, the process shown in FIG. 5 is completed.

[0090] 6 is a flowchart showing the substrate processing method of this embodiment. More specifically, FIG. 6 is a flowchart showing the alarm processing executed by the control unit 102. The alarm processing includes a first alarm processing executed while gas is being discharged from the gas supply nozzle 6, and a second alarm processing executed while processing liquid is being discharged from the processing liquid supply nozzle 7. In other words, the alarm processing is executed while fluid is being supplied.

[0091] 6, the substrate processing method of this embodiment further includes steps S200, S300, and S400. Specifically, the control unit 102 determines whether the measured value of the fluid discharge flow rate exceeds the upper allowable range UA or the lower allowable range LA during fluid supply (step S200). If the control unit 102 determines that the measured value of the fluid discharge flow rate exceeds the upper allowable range UA or the lower allowable range LA (Yes in step S200), it causes the alarm generating unit 9 to generate an alarm (step S300) and terminates the alarm processing shown in FIG. 6. In response to causing the alarm generating unit 9 to generate an alarm, the control unit 102 stops the substrate processing described with reference to FIG. 5.

[0092] If the control unit 102 determines that the measured value of the fluid discharge flow rate does not exceed the upper allowable range UA or the lower allowable range LA (No in step S200), it determines whether the supply of fluid has ended (step S400). If the control unit 102 determines that the supply of fluid has not ended (No in step S400), the process returns to step S200. If the control unit 102 determines that the supply of fluid has ended (Yes in step S400), the warning process shown in FIG. 6 ends.

[0093] Next, a first example of the alarm processing will be described with reference to FIGS. 1 to 8. FIG. 7 is a flowchart showing a part of the first example of the alarm processing. FIG. 8 is a flowchart showing another part of the first example of the alarm processing. In detail, FIGS. 7 and 8 show a first example of the processing (step S200 in FIG. 6) for determining whether the measured value of the fluid discharge flow rate exceeds the upper limit allowable range UA or the lower limit allowable range LA. In the following description, the processing for determining whether the measured value of the fluid discharge flow rate exceeds the upper limit allowable range UA or the lower limit allowable range LA may be referred to as the "determination processing." As shown in FIGS. 7 and 8, the first example of the alarm processing includes steps S201 to S210.

[0094] 7, first, the control unit 102 determines whether the measured value of the fluid flow rate is greater than the target value FT (the target value of the fluid discharge flow rate) (step S201). If the control unit 102 determines that the measured value of the fluid flow rate is greater than the target value FT (Yes in step S201), the control unit 102 determines whether the target value FT of the fluid discharge flow rate is equal to or greater than a first threshold value UT (see FIG. 4) (step S202).

[0095] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is not greater than the first threshold value UT (No in step S202), that is, if it determines that the target value FT of the fluid discharge flow rate is smaller than the first threshold value UT, it determines whether the measured value of the fluid flow rate is greater than the first upper limit value UL1 (see Figure 4) (step S203).

[0096] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the first upper limit UL1 (Yes in step S203), it determines whether the measured value of the fluid flow rate is greater than the second upper limit UL2 (see FIG. 4) (step S204). On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the first upper limit UL1 (No in step S203), the process proceeds to step S400 described with reference to FIG.

[0097] If the control unit 102 determines in step S400 that the supply of fluid has not ended (No in step S400), the process returns to step S201. If the control unit 102 determines that the supply of fluid has ended (Yes in step S400), the warning process shown in FIGS. 7 and 8 ends.

[0098] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the second upper limit UL2 (Yes in step S204), it determines that the measured value of the fluid flow rate exceeds the upper limit allowable range UA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 7 and 8. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the second upper limit UL2 (No in step S204), the processing proceeds to step S400 described with reference to Figure 6.

[0099] When the control unit 102 determines that the target value FT of the fluid discharge flow rate is equal to or greater than the first threshold value UT (Yes in step S202), it determines whether the measured value of the fluid flow rate is greater than the first upper limit value UL1 (step S205).

[0100] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the first upper limit UL1 (Yes in step S205), it determines that the measured value of the fluid flow rate exceeds the upper limit allowable range UA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 7 and 8. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the first upper limit UL1 (No in step S205), the processing proceeds to step S400 described with reference to Figure 6.

[0101] If the control unit 102 determines that the measured value of the fluid flow rate is not greater than the target value FT (No in step S201), it determines whether the measured value of the fluid flow rate is smaller than the target value FT (step S206), as shown in Fig. 8. If the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the target value FT (No in step S206), the process proceeds to step S400 described with reference to Fig. 6.

[0102] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the target value FT (Yes in step S206), it determines whether the target value FT of the fluid discharge flow rate is equal to or larger than a second threshold value LT (see FIG. 4) (step S207).

[0103] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is not greater than the second threshold value LT (No in step S207), that is, if it determines that the target value FT of the fluid discharge flow rate is smaller than the second threshold value LT, it determines whether the measured value of the fluid flow rate is smaller than the first lower limit value LL1 (see Figure 4) (step S208).

[0104] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the first lower limit LL1 (Yes in step S208), it determines whether the measured value of the fluid flow rate is smaller than the second lower limit LL2 (see FIG. 4) (step S209). On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the first lower limit LL1 (No in step S208), the process proceeds to step S400 described with reference to FIG. 6.

[0105] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the second lower limit LL2 (Yes in step S209), it determines that the measured value of the fluid flow rate exceeds the lower limit allowable range LA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 7 and 8. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the second lower limit LL2 (No in step S209), the processing proceeds to step S400 described with reference to Figure 6.

[0106] When the control unit 102 determines that the target value FT of the fluid discharge flow rate is equal to or greater than the second threshold value LT (Yes in step S207), it determines whether the measured value of the fluid flow rate is smaller than the first lower limit value LL1 (step S210).

[0107] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the first lower limit LL1 (Yes in step S210), it determines that the measured value of the fluid flow rate exceeds the lower limit allowable range LA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 7 and 8. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the first lower limit LL1 (No in step S210), the processing proceeds to step S400 described with reference to Figure 6.

[0108] In the first example of the judgment process, when the control unit 102 determines that the target value FT of the fluid discharge flow rate is greater than or equal to the first threshold value UT (Yes in step S202), it only compares the measured value of the fluid flow rate with the first upper limit value UL1. However, as in the case where the target value FT of the fluid discharge flow rate is not greater than or equal to the first threshold value UT, the control unit 102 may compare the measured value of the fluid flow rate with the second upper limit value UL2 in addition to comparing the measured value of the fluid flow rate with the first upper limit value UL1.

[0109] Similarly, in the first example of the judgment process, when the control unit 102 judges that the target value FT of the fluid discharge flow rate is greater than or equal to the second threshold value LT (Yes in step S207), it only compares the measured value of the fluid flow rate with the first lower limit value LL1, but as in the case when the target value FT of the fluid discharge flow rate is not greater than or equal to the second threshold value LT, the control unit 102 may compare the measured value of the fluid flow rate with the second lower limit value LL2 in addition to comparing the measured value of the fluid flow rate with the first lower limit value LL1.

[0110] Next, a second example of the warning processing will be described with reference to Figures 1 to 6 and Figures 9 to 10. Figure 9 is a flowchart showing part of the second example of the warning processing. Figure 10 is a flowchart showing another part of the second example of the warning processing. In detail, Figures 9 and 10 show a second example of the determination processing (step S200 in Figure 6). As shown in Figures 9 and 10, the second example of the warning processing includes steps S221 to S228.

[0111] 9, first, the control unit 102 determines whether the measured value of the fluid flow rate is greater than the target value FT (the target value of the fluid discharge flow rate) (step S221). If the control unit 102 determines that the measured value of the fluid flow rate is greater than the target value FT (Yes in step S221), the control unit 102 determines whether the target value FT of the fluid discharge flow rate is equal to or greater than a first threshold value UT (see FIG. 4) (step S222).

[0112] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is not greater than the first threshold value UT (No in step S222), that is, if it determines that the target value FT of the fluid discharge flow rate is smaller than the first threshold value UT, it determines whether the measured value of the fluid flow rate is greater than the second upper limit value UL2 (see Figure 4) (step S223).

[0113] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the second upper limit UL2 (Yes in step S223), it determines that the measured value of the fluid flow rate exceeds the upper limit allowable range UA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 9 and 10. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the second upper limit UL2 (No in step S223), the processing proceeds to step S400 described with reference to Figure 6.

[0114] If the control unit 102 determines in step S400 that the supply of fluid has not ended (No in step S400), the process returns to step S221. If the control unit 102 determines that the supply of fluid has ended (Yes in step S400), the warning process shown in FIGS. 9 and 10 ends.

[0115] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is equal to or greater than the first threshold value UT (Yes in step S222), it determines whether the measured value of the fluid flow rate is greater than a first upper limit value UL1 (see FIG. 4) (step S224).

[0116] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the first upper limit UL1 (Yes in step S224), it determines that the measured value of the fluid flow rate exceeds the upper limit allowable range UA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 9 and 10. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the first upper limit UL1 (No in step S224), the processing proceeds to step S400 described with reference to Figure 6.

[0117] If the control unit 102 determines that the measured value of the fluid flow rate is not greater than the target value FT (No in step S221), it determines whether the measured value of the fluid flow rate is smaller than the target value FT (step S225), as shown in Fig. 10. If the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the target value FT (No in step S225), the process proceeds to step S400 described with reference to Fig. 6.

[0118] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the target value FT (Yes in step S225), it determines whether the target value FT of the fluid discharge flow rate is equal to or larger than a second threshold value LT (see FIG. 4) (step S226).

[0119] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is not greater than the second threshold value LT (No in step S226), that is, if it determines that the target value FT of the fluid discharge flow rate is smaller than the second threshold value LT, it determines whether the measured value of the fluid flow rate is smaller than the second lower limit value LL2 (see Figure 4) (step S227).

[0120] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the second lower limit LL2 (Yes in step S227), it determines that the measured value of the fluid flow rate exceeds the lower limit allowable range LA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 9 and 10. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the second lower limit LL2 (No in step S227), the processing proceeds to step S400 described with reference to Figure 6.

[0121] If the control unit 102 determines that the target value FT of the fluid discharge flow rate is equal to or greater than the second threshold value LT (Yes in step S226), it determines whether the measured value of the fluid flow rate is smaller than the first lower limit value LL1 (see FIG. 4) (step S228).

[0122] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the first lower limit LL1 (Yes in step S228), it determines that the measured value of the fluid flow rate exceeds the lower limit allowable range LA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 9 and 10. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the first lower limit LL1 (No in step S228), the processing proceeds to step S400 described with reference to Figure 6.

[0123] Next, a third example of the warning processing will be described with reference to FIGS. 1 to 6 and 11 to 12. FIG. 11 is a flowchart showing part of the third example of the warning processing. FIG. 12 is a flowchart showing another part of the third example of the warning processing. In detail, FIGS. 11 and 12 show a third example of the determination processing (step S200 in FIG. 6). As shown in FIGS. 11 and 12, the third example of the warning processing includes steps S231 to S236. Note that, unlike the first and second examples of the determination processing, the third example of the determination processing does not use the first threshold value UT and the second threshold value LT. Therefore, the storage unit 103 does not need to store the first threshold value UT and the second threshold value LT.

[0124] 11, first, the control unit 102 determines whether the measured value of the fluid flow rate is greater than the target value FT (the target value of the fluid discharge flow rate) (step S231). If the control unit 102 determines that the measured value of the fluid flow rate is greater than the target value FT (Yes in step S231), the control unit 102 determines whether the measured value of the fluid flow rate is greater than a first upper limit value UL1 (see FIG. 4) (step S232).

[0125] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the first upper limit UL1 (Yes in step S232), it determines whether the measured value of the fluid flow rate is greater than the second upper limit UL2 (see FIG. 4) (step S233). On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the first upper limit UL1 (No in step S232), the process proceeds to step S400 described with reference to FIG. 6.

[0126] If the control unit 102 determines in step S400 that the supply of fluid has not ended (No in step S400), the process returns to step S231. If the control unit 102 determines that the supply of fluid has ended (Yes in step S400), the warning process shown in FIGS. 11 and 12 ends.

[0127] If the control unit 102 determines that the measured value of the fluid flow rate is greater than the second upper limit UL2 (Yes in step S233), it determines that the measured value of the fluid flow rate exceeds the upper limit allowable range UA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 11 and 12. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not greater than the second upper limit UL2 (No in step S233), the processing proceeds to step S400 described with reference to Figure 6.

[0128] If the control unit 102 determines that the measured value of the fluid flow rate is not greater than the target value FT (No in step S231), it determines whether the measured value of the fluid flow rate is smaller than the target value FT (step S234), as shown in Fig. 12. If the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the target value FT (No in step S234), the process proceeds to step S400 described with reference to Fig. 6.

[0129] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the target value FT (Yes in step S234), it determines whether the measured value of the fluid flow rate is smaller than a first lower limit value LL1 (see FIG. 4) (step S235).

[0130] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the first lower limit LL1 (Yes in step S235), it determines whether the measured value of the fluid flow rate is smaller than the second lower limit LL2 (see FIG. 4) (step S236). On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the first lower limit LL1 (No in step S235), the process proceeds to step S400 described with reference to FIG. 6.

[0131] If the control unit 102 determines that the measured value of the fluid flow rate is smaller than the second lower limit LL2 (Yes in step S236), it determines that the measured value of the fluid flow rate exceeds the lower limit allowable range LA, causes the alarm generation unit 9 to generate an alarm (step S300), and ends the alarm processing shown in Figures 11 and 12. On the other hand, if the control unit 102 determines that the measured value of the fluid flow rate is not smaller than the second lower limit LL2 (No in step S236), the processing proceeds to step S400 described with reference to Figure 6.

[0132] Next, the substrate processing system 100 of this embodiment will be further described with reference to Figures 1 to 3 and 13(a) to 16. In detail, the process of setting a target value for the gas discharge flow rate and the process of setting a target value for the processing liquid discharge flow rate will be described with reference to Figures 1 to 3 and 13(a) to 16. In the following description, the target value for the gas discharge flow rate may be referred to as a "first target value." Similarly, the target value for the processing liquid discharge flow rate may be referred to as a "second target value."

[0133] 13(a) is a diagram showing a part of the recipe data RD stored in the storage unit 103. FIG. 13(b) is a diagram showing a correction table TA stored in the storage unit 103.

[0134] As shown in FIG. 13(a), the recipe data RD has a first field F1 to a third field F3. In the first field F1, a target value of the gas discharge flow rate is set. In this embodiment, a correction table TA is set in the first field F1. In the second field F2, an initial target value EM of the processing liquid discharge flow rate is set. In the third field F3, a correction value EH for the initial target value EM of the processing liquid discharge flow rate is set.

[0135] As shown in FIG. 13(b), the correction table TA has a first field F11 to a third field F13. In the first field F11, identification codes (#1 to #8) assigned to each of the multiple processing units 1 (in this embodiment, the first processing unit #1 to the eighth processing unit #8) are set. In the second field F12, an initial target value GM of the gas discharge flow rate is set for each processing unit 1. In the third field F13, a correction value GH (GH1 to GH8) for the initial target value GM of the gas discharge flow rate is set for each processing unit 1. Hereinafter, the correction value for the initial target value GM of the gas discharge flow rate may be referred to as a "first correction value."

[0136] The initial target value GM of the gas discharge flow rate is the same among the multiple processing units 1. The first correction value GH (GH1 to GH8) is set to a value calculated for each processing unit 1. Specifically, the multiple first correction values ​​GH (GH1 to GH8) are set based on the flow rate of gas discharged from the gas supply nozzle 6 installed in a specific one of the multiple processing units 1. In other words, the multiple first correction values ​​GH (GH1 to GH8) are set based on the flow rate of gas discharged from the gas supply nozzle 6 housed in a specific one of the multiple chambers 2.

[0137] First, a process for setting a target value for the gas discharge flow rate will be described. In this embodiment, the control unit 102 sets a target value for the gas discharge flow rate for each processing unit 1. In other words, the control unit 102 sets a target value (first target value) for the gas discharge flow rate for each gas supply nozzle 6 equipped to multiple processing units 1. That is, the control unit 102 sets multiple first target values. The control unit 102 is an example of a target value setting unit.

[0138] Specifically, when setting the target value of the gas discharge flow rate, the control unit 102 refers to the first field F1 of the recipe data RD and reads out the correction table TA. Then, referring to the correction table TA, the control unit 102 corrects the initial target value GM of the gas discharge flow rate for each processing unit 1 (gas supply nozzle 6) based on multiple first correction values ​​GH (GH1 to GH8) to set multiple first target values. For example, the control unit 102 adds or subtracts the first correction value GH1 to or from the target value GM to set the first target value for the first processing unit #1.

[0139] Next, a process for setting a target value for the discharge flow rate of the treatment liquid will be described. In the following description, a correction value for the initial target value EM of the discharge flow rate of the treatment liquid will sometimes be referred to as a “second correction value.”

[0140] In this embodiment, when setting the target value of the processing liquid discharge flow rate, the control unit 102 refers to the second field F2 and the third field F3 of the recipe data RD, and corrects the initial target value EM of the processing liquid discharge flow rate based on the second correction value EH to set the second target value. The second correction value EH is set based on the flow rate of the processing liquid discharged from the processing liquid supply nozzle 7 installed in a specific one of the plurality of substrate processing systems 100.

[0141] Next, a method for acquiring the first correction value GH will be described with reference to FIGS. 14(a) and 14(b). FIG. 14(a) is a diagram showing a system for acquiring the first correction value GH. As shown in FIG. 14(a), in this embodiment, an information processing device 200 is used to acquire the first correction value GH. The information processing device 200 is not particularly limited as long as it is a device capable of performing calculations. For example, the information processing device 200 may be a computer device such as a personal computer or a smartphone.

[0142] The information processing device 200 acquires the measurement results of the gas flow rate for each processing unit 1 (gas supply nozzle 6) from the substrate processing system 100. For example, the substrate processing system 100 and the information processing device 200 may be communicatively connected, and data indicating the measurement results of the gas flow rate may be transmitted from the substrate processing system 100 to the information processing device 200. The communication medium may be a communication cable or wireless. Alternatively, a medium for storing data may be used. For example, the medium for storing data may be an optical disc such as a compact disc or a DVD, or a storage device such as a USB memory.

[0143] 14(b) is a flowchart showing the processing executed by the information processing device 200. The processing shown in FIG.

[0144] As shown in FIG. 14(b), the information processing device 200 first calculates the average value of the gas flow rate for each processing unit 1 based on the measurement results of the gas flow rate (step S401).

[0145] The information processing device 200 calculates the average value of the gas flow rate for each processing unit 1, and then determines, from among the multiple processing units 1, the processing unit 1 whose average value of the gas flow rate is the same as the initial target value GM, or the processing unit 1 whose average value of the gas flow rate is the value closest to the initial target value GM, as the reference processing unit 1R (step S402).

[0146] After determining the reference processing unit 1R, the information processing device 200 calculates the difference between the average value of the gas flow rate of the reference processing unit 1R and the average value of the gas flow rates of the other processing units 1 as a first correction value GH (step S403), and ends the processing shown in FIG. 14(b). Note that the value of the first correction value GH of the reference processing unit 1R is "0." For example, in the example shown in FIG. 13(b), the fourth processing unit #4 is the reference processing unit 1R.

[0147] Next, a method for acquiring the second correction value EH will be described with reference to Figures 15 and 16. Figure 15 is a diagram showing a system for acquiring the second correction value EH. As shown in Figure 15, in this embodiment, an information processing device 200 is used to acquire the second correction value EH.

[0148] The information processing apparatus 200 acquires measurement results of the processing liquid flow rate from the plurality of substrate processing systems 100. The measurement result of the processing liquid flow rate acquired by the information processing apparatus 200 from one substrate processing system 100 may be a measurement value of the flow rate of the processing liquid discharged from the processing liquid supply nozzle 7 provided in a specific one of the plurality of processing units 1, or may be a measurement value of the flow rate of the processing liquid discharged from each processing liquid supply nozzle 7 provided in the plurality of processing units 1.

[0149] 16 is a flowchart showing the processing executed by the information processing device 200. The processing shown in FIG.

[0150] As shown in FIG. 16, the information processing apparatus 200 first calculates an average value of the processing liquid flow rate for each substrate processing system 100 based on the measurement results of the processing liquid flow rate (step S411).

[0151] The information processing device 200 calculates the average value of the processing liquid flow rate for each substrate processing system 100, and then determines, from among the multiple substrate processing systems 100, the substrate processing system 100 whose average value of the processing liquid flow rate is the same as the initial target value EM, or whose average value of the processing liquid flow rate is closest to the initial target value EM, as the reference processing system 100R (step S412).

[0152] After determining the reference processing system 100R, the information processing apparatus 200 calculates, as a second correction value EH, a difference between the average value of the processing liquid flow rate of the reference processing system 100R and the average value of the processing liquid flow rate of the other substrate processing systems 100 (step S413), and ends the process shown in Fig. 16. The value of the second correction value EH of the reference processing system 100R is "0".

[0153] Next, a substrate processing method executed by the substrate processing system 100 will be described with reference to Figures 1 to 3, Figures 13(a), 13(b), and Figures 17(a) to 18(b). Figure 17(a) is a flowchart showing the substrate processing method of this embodiment. In detail, Figure 17(a) shows the process executed by the control unit 102. The substrate processing method of this embodiment includes a step of setting a target value (step S1) and a step of processing the substrate W (step S2).

[0154] 17(a), the control unit 102 sets a target value (first target value) for the gas discharge flow rate and a target value (second target value) for the processing liquid discharge flow rate (step S1) before starting processing of the substrate W. After setting the target value (first target value) for the gas discharge flow rate and the target value (second target value) for the processing liquid discharge flow rate, the control unit 102 processes the substrate W as described with reference to FIGS. 5 and 6 (step S2).

[0155] 17(b) is a flowchart showing a process for setting target values. As shown in FIG. 17(b), the control unit 102 sets a target value (first target value) for the gas discharge flow rate (step S11), and then sets a target value (second target value) for the treatment liquid discharge flow rate (step S12). As described with reference to FIGS. 13(a) and 13(b), the control unit 102 sets a plurality of first target values ​​when setting the target value for the gas discharge flow rate. Note that the control unit 102 may set the target value for the gas discharge flow rate after setting the target value for the treatment liquid discharge flow rate.

[0156] Fig. 18(a) is a flowchart showing a process for setting a target value (first target value) of the gas discharge flow rate. As shown in Fig. 18(a), the control unit 102 corrects the initial target value GM of the gas discharge flow rate for each processing unit 1 (gas supply nozzle 6) based on a plurality of first correction values ​​GH (GH1 to GH8) (step S111). Then, the corrected target value (first target value) is set for each processing unit 1 (step S112), and the process shown in Fig. 18(a) ends.

[0157] 18(b) is a flowchart showing a process for setting a target value (second target value) of the discharge flow rate of the treatment liquid. As shown in FIG. 18(b), the control unit 102 corrects the initial target value EM of the discharge flow rate of the treatment liquid based on the second correction value EH (step S121). Then, the control unit 102 sets the corrected target value (second target value) (step S122), and ends the process shown in FIG. 18(b).

[0158] In this embodiment, the process of correcting the target values ​​of the gas discharge flow rate and the processing liquid discharge flow rate has been described, but the target values ​​to be corrected are not limited to the gas discharge flow rate and the processing liquid discharge flow rate. The target values ​​to be corrected may be any flow rate of a fluid. For example, the target value of the circulation flow rate may be corrected in the same way as the processing liquid discharge flow rate.

[0159] Fig. 19 is a diagram showing the configuration of a substrate processing system 100 of this embodiment. Specifically, Fig. 19 shows the interior of a fluid box 100A. As shown in Fig. 19, the substrate processing system 100 further includes a circulation pipe 111, a processing liquid storage section 112, a circulation pump 113, a flow rate sensor 114, and a flow rate control valve 115. The circulation pipe 111, the processing liquid storage section 112, the circulation pump 113, the flow rate sensor 114, and the flow rate control valve 115 are housed in the fluid box 100A.

[0160] The processing liquid is stored in the processing liquid storage section 112. The circulation pipe 111 circulates the processing liquid through the processing liquid storage section 112. The circulation pipe 111 is provided with a circulation pump 113, a flow rate sensor 114, and a flow rate control valve 115.

[0161] The circulation pump 113 drives the processing liquid by the pressure of the fluid. Specifically, the circulation pump 113 drives the processing liquid by the pressure of the fluid so that the processing liquid circulates through the circulation pipe 111. The flow rate sensor 114 measures the flow rate of the processing liquid circulating through the circulation pipe 111. The flow rate control valve 115 controls the flow rate of the processing liquid circulating through the circulation pipe 111.

[0162] The control unit 102 corrects the target value of the circulation flow rate in the same way as the processing liquid discharge flow rate. Specifically, an initial target value of the circulation flow rate and a correction value for the initial target value of the circulation flow rate are set in the recipe data RD. The control unit 102 corrects the initial target value of the circulation flow rate based on the correction value for the initial target value of the circulation flow rate. Then, the control unit 102 sets the corrected target value. The correction value for the initial target value of the circulation flow rate may be calculated in the same way as the correction value EH (second correction value) for the initial target value EM of the processing liquid discharge flow rate.

[0163] An embodiment of the present invention has been described above with reference to FIGS. 1 to 19. According to this embodiment, when the target value FT of the fluid discharge flow rate is greater than the first threshold value UT, the upper limit of the upper allowable range UA is set to the first upper limit value UL1. The first upper limit value UL1 is a value obtained by adding a value obtained by multiplying the target value FT of the fluid discharge flow rate by a first predetermined ratio to the target value FT. Therefore, the larger the target value FT, the larger the upper limit value (first upper limit value UL1) of the upper allowable range UA. Therefore, when the target value FT is a large value, the upper limit of the upper allowable range UA is wider than when the second upper limit value UL2 (the value obtained by adding the first offset value to the target value FT of the fluid discharge flow rate) is set, making it less likely that an alarm will be generated due to device-to-device error.

[0164] Furthermore, when the target value FT of the fluid discharge flow rate is smaller than the first threshold value UT, the upper limit of the upper allowable range UA is set to the second upper limit value UL2. Therefore, when the target value FT of the fluid discharge flow rate is smaller than the first threshold value UT, the upper limit of the upper allowable range UA is greater than the first upper limit value UL1. Therefore, when the target value FT is smaller, the upper limit allowable range UA is wider than when the upper limit is set to the first upper limit value UL1, making it less likely that an alarm will be generated due to device-to-device error.

[0165] Like the upper allowable range UA, the lower limit of the lower allowable range LA also changes between the first lower limit value LL1 and the second lower limit value LL2, with the second threshold value LT as the boundary, making it less likely that an alarm will be generated due to an error between devices.

[0166] Furthermore, according to this embodiment, the target value of the gas discharge flow rate can be corrected for each processing unit 1. Therefore, it becomes less likely that an alarm will be issued due to an error between the processing units 1. The error between the processing units 1 includes, for example, variations between the mass flow controllers 62.

[0167] Furthermore, according to this embodiment, the target values ​​of the processing liquid discharge flow rate and the circulation flow rate can be corrected for each substrate processing system 100. Therefore, an alarm caused by an error between the substrate processing systems 100 is less likely to be issued.

[0168] The present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above-described embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0169] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0170] For example, in the embodiment described with reference to Figures 1 to 19, a clamping chuck that clamps the substrate W was described as the configuration for holding the substrate W, but a vacuum chuck may also be adopted as the configuration for holding the substrate W.

[0171] Furthermore, in the embodiment described with reference to Figures 1 to 19, the information processing device 200 was used to calculate the correction value for the initial target value, but the control unit 102 of the substrate processing system 100 may be used instead of the information processing device 200.

[0172] Furthermore, in the embodiment described with reference to Figures 1 to 19, the substrate processing system 100 is a single-wafer type apparatus that processes substrates W one by one, but the substrate processing system 100 may also be a batch type apparatus that processes multiple substrates W simultaneously. [Industrial Applicability]

[0173] The present invention is useful in the field of processing substrates using processing liquids. [Explanation of symbols]

[0174] 1: Processing unit 1R: Reference Processing Unit 2: Chamber 6: Gas supply nozzle 7: Processing liquid supply nozzle 9: Alarm generation section 61: Gas supply piping 62: Mass flow controller 71: Processing liquid supply pipe 72: Flow control valve 73: Flow sensor 100: Substrate processing system 100R: Reference Processing System 101: Control device 102: Control unit 103: Storage section 621: Flow control valve 622: Flow sensor EH: Correction value (second correction value) EM: Target value FT: Target value GH: Correction value (first correction value) GM: Target value LA: Lower tolerance range LL1: First lower limit LL2: Second lower limit LT: Second threshold RD: Recipe data TA: Correction table UA: Upper Acceptable Range UL1: First upper limit UL2: Second upper limit UT: First threshold W: Substrate

Claims

1. 1. A method of processing a substrate with a substrate processing system, comprising: Discharging a fluid from a fluid supply nozzle onto the substrate; determining whether a measured value of a flow rate of the fluid discharged from the fluid supply nozzle exceeds an upper allowable range or a lower allowable range; generating an alarm when it is determined that the measurement value exceeds the upper limit tolerance range or the lower limit tolerance range; Inclusive of the upper limit tolerance range is a range having an upper limit equal to the greater of a first upper limit value and a second upper limit value, the first upper limit value indicates a value obtained by multiplying a target value for the flow rate of the fluid by a first predetermined ratio and adding the value to the target value, the second upper limit value indicates a value obtained by adding the first offset value to the target value, the lower limit tolerance range is a range having a lower limit equal to the smaller of a first lower limit value and a second lower limit value, the first lower limit value indicates a value obtained by multiplying the target value by a second predetermined ratio and subtracting the result from the target value, The substrate processing method, wherein the second lower limit value indicates a value obtained by subtracting a second offset value from the target value.

2. The step of determining includes: determining whether the target value is greater than or equal to a first threshold; when it is determined that the target value is equal to or greater than the first threshold value, determining whether the measured value exceeds the upper limit allowable range based on whether the measured value is greater than the first upper limit value; The method of claim 1 , further comprising:

3. The step of determining includes: determining whether the target value is greater than or equal to a first threshold; when it is determined that the target value is equal to or greater than the first threshold value, determining whether the measurement value exceeds the upper limit allowable range based on whether the measurement value is greater than both the first upper limit value and the second upper limit value; The method of claim 1 , further comprising:

4. The step of determining includes: determining whether the target value is greater than or equal to a second threshold; when it is determined that the target value is equal to or greater than the second threshold value, determining whether the measurement value exceeds the lower limit tolerance range based on whether the measurement value is smaller than the first lower limit value; The substrate processing method according to claim 2 or 3, further comprising:

5. The step of determining includes: determining whether the target value is greater than or equal to a second threshold; when it is determined that the target value is equal to or greater than the second threshold value, determining whether the measurement value exceeds the lower limit tolerance range based on whether the measurement value is smaller than both of the first lower limit value and the second lower limit value; The substrate processing method according to claim 2 or 3, further comprising:

6. 6. A substrate processing method according to claim 2, wherein the determination step includes a step of determining whether the measurement value exceeds the upper limit allowable range based on whether the measurement value is greater than the second upper limit value when it is determined that the target value is not greater than or equal to the first threshold value.

7. 6. A substrate processing method according to claim 2, wherein the determination step includes a step of determining whether the measurement value exceeds the upper limit allowable range depending on whether the measurement value is greater than both the first upper limit value and the second upper limit value when it is determined that the target value is not greater than or equal to the first threshold value.

8. The step of determining includes: determining whether the target value is greater than or equal to a second threshold; when it is determined that the target value is not equal to or greater than the second threshold value, determining whether the measurement value is smaller than the second lower limit value, thereby determining whether the measurement value exceeds the lower limit allowable range; The substrate processing method according to claim 2 , further comprising:

9. The step of determining includes: determining whether the target value is greater than or equal to a second threshold; when it is determined that the target value is not equal to or greater than the second threshold value, determining whether or not the measurement value exceeds the lower limit allowable range based on whether or not the measurement value is smaller than both of the first lower limit value and the second lower limit value; The substrate processing method according to claim 2 , further comprising:

10. The step of determining includes: determining whether the measured value is greater than or less than the target value; a step of determining whether the measurement value exceeds the upper limit allowable range based on whether the measurement value is greater than both the first upper limit value and the second upper limit value when it is determined that the measurement value is greater than the target value; a step of determining whether the measurement value exceeds the lower limit tolerance range based on whether the measurement value is smaller than both of the first lower limit value and the second lower limit value when the measurement value is determined to be smaller than the target value; The method of claim 1 , further comprising:

11. The method further includes the step of setting the target value; The substrate processing system includes a plurality of chambers for accommodating the substrates; the fluid supply nozzle includes a plurality of gas supply nozzles that eject a gas as the fluid, the plurality of gas supply nozzles are disposed within the plurality of chambers; the target value includes a plurality of first target values ​​for flow rates of the gas discharged from each of the plurality of gas supply nozzles, The substrate processing method according to claim 1 , wherein the step of setting the target value includes the step of setting the plurality of first target values.

12. the step of setting the target value includes a step of correcting an initial target value for the flow rate of the gas for each of the gas supply nozzles based on a plurality of first correction values ​​to set the plurality of first target values; The substrate processing method according to claim 11 , wherein the plurality of first correction values ​​are set based on a flow rate of the gas discharged from a specific one of the plurality of gas supply nozzles.

13. The method further includes the step of setting the target value; the fluid supply nozzle includes a processing liquid supply nozzle that discharges a processing liquid as the fluid, the target value includes a second target value for a flow rate of the processing liquid discharged from the processing liquid supply nozzle, the step of setting the target value includes a step of correcting an initial target value for the flow rate of the treatment liquid based on a second correction value to set the second target value; 13. A substrate processing method according to claim 1, wherein the second correction value is set based on a flow rate of the processing liquid ejected from the processing liquid supply nozzle mounted on a specific one of the plurality of substrate processing systems.

14. A substrate processing system for processing a substrate, comprising: a fluid supply nozzle that ejects a fluid onto the substrate; a flow rate measuring unit that measures a flow rate of the fluid discharged from the fluid supply nozzle; a flow rate control unit that controls a flow rate of the fluid supplied to the fluid supply nozzle based on a preset target value; an alarm generating unit that generates an alarm; an alarm control unit that causes the alarm generating unit to generate the alarm when a measurement value of the flow rate measured by the flow rate measuring unit exceeds an upper limit allowable range or a lower limit allowable range; Equipped with the upper limit tolerance range is a range having an upper limit equal to the greater of a first upper limit value and a second upper limit value, the first upper limit value indicates a value obtained by multiplying the target value by a first predetermined ratio and adding the value to the target value, the second upper limit value indicates a value obtained by adding the first offset value to the target value, the lower limit tolerance range is a range having a lower limit equal to the smaller of a first lower limit value and a second lower limit value, the first lower limit value indicates a value obtained by multiplying the target value by a second predetermined ratio and subtracting the result from the target value, The second lower limit value indicates a value obtained by subtracting a second offset value from the target value.

15. The alarm control unit is determining whether the target value is equal to or greater than a first threshold value; When it is determined that the target value is equal to or greater than the first threshold value, it is determined whether or not the measured value is greater than the first upper limit value; The substrate processing system of claim 14 , wherein the measured value is determined to be greater than the first upper limit value, and the measured value is determined to be outside the upper limit allowable range.

16. The alarm control unit is determining whether the target value is equal to or greater than a first threshold value; When it is determined that the target value is equal to or greater than the first threshold value, it is determined whether or not the measured value is greater than both the first upper limit value and the second upper limit value; The substrate processing system of claim 14 , wherein the measured value is determined to exceed the upper limit allowable range when the measured value is determined to be greater than both the first upper limit value and the second upper limit value.

17. The alarm control unit is determining whether the target value is equal to or greater than a second threshold; When it is determined that the target value is equal to or greater than the second threshold value, it is determined whether or not the measured value is smaller than the first lower limit value; 17. The substrate processing system according to claim 15, wherein the measured value is determined to be smaller than the first lower limit value, and the measured value is determined to be outside the lower limit allowable range.

18. The alarm control unit is determining whether the target value is equal to or greater than a second threshold; When it is determined that the target value is equal to or greater than the second threshold value, it is determined whether or not the measured value is smaller than both of the first lower limit value and the second lower limit value; 17. The substrate processing system according to claim 15, wherein the measurement value is determined to exceed the lower limit allowable range when the measurement value is determined to be smaller than both the first lower limit value and the second lower limit value.

19. The alarm control unit is When it is determined that the target value is not equal to or greater than the first threshold value, it is determined whether or not the measured value is greater than the second upper limit value; The substrate processing system according to claim 15 , wherein the measured value is determined to be greater than the second upper limit value, and the measured value is determined to be outside the upper limit allowable range.

20. The alarm control unit is When it is determined that the target value is not equal to or greater than the first threshold value, it is determined whether or not the measured value is greater than both the first upper limit value and the second upper limit value; 19. The substrate processing system according to claim 15, wherein the measured value is determined to exceed the upper limit allowable range when the measured value is determined to be greater than both the first upper limit value and the second upper limit value.

21. The alarm control unit is determining whether the target value is equal to or greater than a second threshold; When it is determined that the target value is not equal to or greater than the second threshold value, it is determined whether or not the measured value is smaller than the second lower limit value; The substrate processing system according to claim 15 , wherein the measured value is determined to be smaller than the second lower limit value, and the measured value is determined to be outside the lower limit allowable range.

22. The alarm control unit is determining whether the target value is equal to or greater than a second threshold; When it is determined that the target value is not equal to or greater than the second threshold value, it is determined whether or not the measured value is smaller than both of the first lower limit value and the second lower limit value; 21. The substrate processing system according to claim 15, wherein the measurement value is determined to exceed the lower limit allowable range when the measurement value is determined to be smaller than both the first lower limit value and the second lower limit value.

23. The alarm control unit is determining whether the measured value is greater than or less than the target value; When it is determined that the measured value is greater than the target value, it is determined whether or not the measured value is greater than both the first upper limit value and the second upper limit value; When it is determined that the measured value is greater than both the first upper limit value and the second upper limit value, it is determined that the measured value exceeds the upper limit allowable range; When it is determined that the measured value is smaller than the target value, it is determined whether or not the measured value is smaller than both of the first lower limit value and the second lower limit value; The substrate processing system of claim 14 , wherein the measurement value is determined to exceed the lower allowable range when the measurement value is determined to be smaller than both the first lower limit value and the second lower limit value.

24. A target value setting unit that sets the target value; A plurality of chambers for accommodating the substrate; Further comprising: the fluid supply nozzle includes a plurality of gas supply nozzles that eject a gas as the fluid, the plurality of gas supply nozzles are disposed within the plurality of chambers; the target value includes a plurality of first target values ​​for flow rates of the gas discharged from each of the plurality of gas supply nozzles, The substrate processing system according to claim 14 , wherein the target value setting unit sets the plurality of first target values.

25. the target value setting unit corrects an initial target value for the flow rate of the gas for each of the gas supply nozzles based on a plurality of first correction values ​​to set the plurality of first target values; The substrate processing system of claim 24 , wherein the plurality of first correction values ​​are set based on a flow rate of the gas discharged from a specific one of the plurality of gas supply nozzles.

26. A target value setting unit that sets the target value, the fluid supply nozzle includes a processing liquid supply nozzle that discharges a processing liquid as the fluid, the target value includes a second target value for a flow rate of the processing liquid discharged from the processing liquid supply nozzle, the target value setting unit corrects an initial target value for the flow rate of the treatment liquid based on a second correction value to set the second target value; 26. The substrate processing system according to claim 14, wherein the second correction value is set based on a flow rate of the processing liquid ejected from the processing liquid supply nozzle mounted on a specific one of the plurality of substrate processing systems.

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