SPUTTERING APPARATUS, METHOD FOR CONTROLLING SPUTTERING APPARATUS, AND CONTROL APPARATUS FOR SPUTTERING APPARATUS

Abstract

A sputtering device according to an embodiment of the present invention is equipped with: one or more targets disposed to face a substrate and made from a film deposition material; one or more magnet units disposed on the rear side of the targets; a control device having an optimum solution calculation unit for calculating an optimum solution for a setting condition pertaining to at least one of the magnet units on the basis of input information which includes at least a setting condition, which includes at least one among the position of each magnet unit, a movement pattern of each magnet unit, and inflow currents to constituent electromagnets of each magnet unit or an inflow current fluctuation pattern, and a measurement value of the film quality of the film deposition material deposited on the substrate by the sputtering device; and an adjustment unit capable of individually adjusting the setting conditions of the magnet units on the basis of the optimum solution.

Description

[Technical field]

[0001] The present invention relates to a sputtering apparatus having one or more cathodes with one or more magnet units arranged on the back surface of a target, a control method thereof, and a control device for a sputtering apparatus. [Background technology]

[0002] As a deposition device for a large-area substrate, a magnetron sputtering device is known, in which one or more magnet units are arranged on the back surface (non-sputtering surface) of a target. The deposition uniformity (e.g., film thickness and sheet resistance) on the substrate surface on which a film is deposited by a magnetron sputtering device is an important performance factor of the substrate, and maintaining the uniformity is an extremely important function required of the sputtering device.

[0003] In a magnetron sputtering device, the higher the horizontal magnetic flux density (magnetic flux density perpendicular to the electric field) on the target surface (sputtering surface), the higher the erosion rate of the target surface by plasma, and the more film-forming material is released from the target surface, enabling high-speed film formation on the substrate surface. Typically, the higher the horizontal magnetic flux density in an area on the target surface, the higher the film-deposition rate on the surface area of ​​the substrate facing that area tends to be relative to other surface areas.

[0004] Therefore, when depositing a film on a large substrate using a magnetron sputtering device, the distribution of the horizontal magnetic field density has a large effect on the uniformity of the film quality within the substrate surface. In order to deposit a film with uniform quality, it is necessary to appropriately set the position or movement pattern of the magnet unit and the magnetic force strength or magnetic force strength fluctuation pattern.

[0005] Known methods for homogenizing film quality by setting the position or movement pattern of the magnet unit include a technique for moving the magnet unit back and forth along the back surface of the target (see, for example, Patent Document 1) and a technique for moving the magnet unit in a direction toward or away from the back surface of the target (see, for example, Patent Document 2). Patent Document 3 discloses a rotary cathode that includes a cylindrical target and a plurality of magnet units arranged inside it, and that rotates the surface of the target in the circumferential direction to scan a portion where a magnetic field is formed on the surface of the target in the circumferential direction. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2000-239841 A [Patent Document 2] JP 2020-200525 A [Patent Document 3] JP 2016-113646 A Summary of the Invention [Problem to be solved by the invention]

[0007] Since the shape of the target surface changes with the progress of erosion, the distribution of the film quality also changes over time. Therefore, in order to maintain the uniformity of the film quality, it is necessary to continually set the optimal position or movement pattern of the magnet unit and the optimal magnetic strength or magnetic strength fluctuation pattern over time.

[0008] However, it is difficult to accurately predict the progress of erosion because the rate at which erosion progresses is affected by various factors such as pressure, applied voltage, amount of sputtering gas inflow, target constituent material, target quality difference, etc. In addition, erosion progresses faster in areas with higher horizontal magnetic flux density, so the difference between the predicted and actual erosion progress accelerates over time.

[0009] Therefore, it is difficult to preset the optimal position or movement pattern of the magnet unit and the magnetic strength or magnetic strength fluctuation pattern as a function of time, and in reality, it is necessary to periodically carry out a series of operations to check the deposition state of the film-formed substrate, stop the apparatus, and adjust the position or movement pattern of the magnet unit and the magnetic strength or magnetic strength fluctuation pattern. The implementation of such operations is one of the causes of the decrease in the apparatus operating rate, and this problem is more likely to occur as the substrate becomes larger.

[0010] In addition, in general, even if industrial products are manufactured with the same design, individual differences are unavoidable. Therefore, when multiple sputtering devices are installed, it may happen that the distribution of the same film quality cannot be obtained even if all the recognizable film formation conditions are unified. In such a case, it is necessary to tune the position or movement pattern of the magnet unit and the magnetic strength or magnetic strength fluctuation pattern for each device, which is one of the problems that must be solved when operating the device.

[0011] In view of the above circumstances, an object of the present invention is to provide a sputtering apparatus capable of improving the deposition uniformity and the apparatus operating rate, a control method thereof, and a control device for the sputtering apparatus. [Means for solving the problem]

[0012] A sputtering apparatus according to one aspect of the present invention comprises: One or more targets arranged opposite the substrate and made of a deposition material; one or more magnet units disposed on a rear surface of the target; a control device having an optimal solution calculation unit that calculates an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least one of setting conditions including a position of each of the magnet units, a movement pattern of each of the magnet units, and an inflow current or an inflow current fluctuation pattern of an electromagnet constituting each of the magnet units, and a measurement value of a film quality of a film formed on the substrate by the sputtering device; an adjustment unit capable of individually adjusting the setting conditions of the magnet units based on the optimal solution; Equipped with:

[0013] The sputtering apparatus may be connected to an apparatus for measuring the film quality of the film-forming material on the substrate, so that the measurement values ​​are automatically acquired, the optimum solution is calculated, and the setting conditions are automatically adjusted based on the optimum solution.

[0014] The target may be a flat target used with a planar cathode or a cylindrical target used with a rotary cathode. One target may correspond to one or more magnet units.

[0015] The position of the magnet unit indicates the relative positional relationship between the magnet unit and the target corresponding to the magnet unit, i.e., for a planar target, it indicates the relative position of the magnet unit with respect to an arbitrary reference plane parallel to the target, and for a cylindrical target, it indicates the relative position of the magnet unit with respect to the central axis of rotation of the target.

[0016] The movement pattern of the magnet unit refers to a pattern of change in the position of the magnet unit over time when film formation is performed on one substrate while varying the position of the magnet unit.

[0017] The current flowing into the magnet unit refers to a current flowing through a coil to generate a magnetic force when some or all of the magnets constituting the magnet unit are electromagnets.

[0018] The inflow current variation pattern of the magnet unit refers to a pattern of the time change in the inflow current of the magnet unit when film formation is performed on one substrate while varying the inflow current of the magnet unit.

[0019] The film quality includes one or more of physical properties that indicate the characteristics of the film formed by the sputtering apparatus, such as film thickness, sheet resistance, light transmittance, film stress, refractive index, etching characteristics, and film density.

[0020] The measurement values ​​of the film quality of the film forming material on the substrate include measurement data on the film quality of the film forming material at a plurality of measurement points on the substrate.

[0021] The input information may further include information on one or more factors that may affect the distribution of the film quality, such as the type of the film forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during film formation.

[0022] The optimal solution calculation unit is configured to calculate, based on the input information, an optimal solution for at least one of the position of each of the magnet units, the movement pattern of each of the magnet units, the inflow current of the electromagnets constituting each of the magnet units, and the inflow current fluctuation pattern of the electromagnets constituting each of the magnet units, which can satisfy a specified film quality distribution control value.

[0023] The optimal solution can be calculated using, for example, a machine learning machine that has learned actual film formation results, a simulation using a mathematical model, or a degenerate model in which the parts of the mathematical model that have a large computational load are reconstructed using a machine learning machine. In addition, the machine learning machine, the mathematical model, or the degenerated model that directly outputs the optimal solution may be used, or a combination of the machine learning machine, the mathematical model, or the degenerated model that outputs a predicted film quality distribution for any candidate for the optimal solution and a mathematical optimization program that searches for a candidate for the optimal solution that optimizes the predicted film quality distribution may be used.

[0024] A method for controlling a sputtering apparatus according to one embodiment of the present invention is a method for controlling a sputtering apparatus including one or more targets arranged facing a substrate and made of a film forming material, and one or more magnet units arranged on a rear surface of the target, the method comprising the steps of: Calculating an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least setting conditions including a position of each of the magnet units, a movement pattern of each of the magnet units, and at least one of an inflow current or an inflow current fluctuation pattern of an electromagnet constituting each of the magnet units, and a measurement value of a film quality of a film formed on the substrate by the sputtering apparatus; Based on the optimal solution, the setting conditions of the magnet units are individually adjusted.

[0025] A sputtering apparatus control device according to one embodiment of the present invention is a control device for controlling a sputtering apparatus including one or more targets arranged opposite a substrate and made of a film forming material, and one or more magnet units arranged on a rear surface of the targets, an optimal solution calculation unit that calculates an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least one of the setting conditions including the position of each of the magnet units, the movement pattern of each of the magnet units, and the inflow current or the inflow current fluctuation pattern of the electromagnets constituting each of the magnet units, and the measured value of the film quality of the film formation material on the substrate formed by the sputtering apparatus; Equipped with: Effect of the Invention

[0026] According to the present invention, it is possible to improve the deposition uniformity and the operation rate of the apparatus. [Brief description of the drawings]

[0027] [Figure 1] 1 is a schematic cross-sectional view of a sputtering apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is an enlarged view illustrating one configuration example of a magnet unit in the sputtering apparatus. [Diagram 3] 5A and 5B are schematic diagrams for explaining the relationship between the relative position of a magnet unit with respect to a target and the uniformity of film quality. [Figure 4] 11A and 11B are schematic diagrams illustrating suppression of temporal change in film quality distribution by adjusting the rocking motion of a magnet unit. [Diagram 5] FIG. 4 is a front view showing an arrangement of magnet units. [Figure 6] FIG. 2 is a schematic configuration diagram of an adjustment unit in the sputtering apparatus. [Figure 7] 2 is a block diagram showing a configuration of a control device in the sputtering apparatus. FIG. [Figure 8] 8 is a flowchart showing an example of a processing procedure executed in the control device shown in FIG. [Figure 9] FIG. 4 is a schematic cross-sectional view of a sputtering apparatus according to another embodiment of the present invention. [Figure 10] 10 is a schematic diagram of a rotary cathode in the sputtering apparatus shown in FIG. [Figure 11] 11A and 11B are schematic diagrams illustrating suppression of temporal change in film quality distribution by adjusting the rocking motion of a magnet unit. [Figure 12] 5A and 5B are schematic diagrams for explaining the relationship between the swing position of the magnet unit relative to the target and the film quality uniformity. [Figure 13] 10 is a block diagram showing the configuration of a control device in the sputtering apparatus shown in FIG. [Figure 14] 14 is a flowchart showing an example of a processing procedure executed in the control device shown in FIG. [Figure 15] 2 is a schematic diagram of a main part for explaining a modified example of the configuration of the sputtering apparatus shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0029] <First embodiment> [Basic configuration of sputtering equipment] Fig. 1 is a schematic cross-sectional view of a sputtering apparatus 100 according to one embodiment of the present invention. In Fig. 1, the X-axis, Y-axis, and Z-axis indicate three axial directions perpendicular to each other, and the Z-axis corresponds to the up-down direction (height direction).

[0030] The sputtering apparatus 100 is a magnetron sputtering apparatus, and includes a vacuum chamber 1, a substrate holder 2, a target 3, a backing plate 4, a plurality of magnet units 5, and an adhesion prevention plate 6. The sputtering apparatus 100 may be a vertical type sputtering apparatus of a single wafer type or an in-line type vertical sputtering apparatus. When the size of the substrate is equal to or smaller than a predetermined size, the sputtering apparatus 100 may be a horizontal type sputtering apparatus.

[0031] The vacuum chamber 1 is connected to a vacuum pump 7 and configured to be capable of evacuating or maintaining the interior at a predetermined reduced pressure atmosphere. The substrate holder 2 is disposed inside the vacuum chamber 1 and supports a substrate W in a vertical position. The vacuum chamber 1 and the substrate holder 2 are typically connected to a ground potential. The substrate W is, for example, a rectangular glass substrate with a width of 1850 mm or more and a length of 1500 mm or more.

[0032] Although not shown, the vacuum chamber 1 is provided with an inlet and an outlet for the substrate holder 2. The inlet and the outlet may be common or separate. The inlet and the outlet are configured to be openable and closable via a gate valve or the like (not shown).

[0033] The target 3 is made of a film-forming material for forming a film on the substrate W. Typical examples of the film-forming material include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a metal or alloy target having electrical conductivity is used.

[0034] The target 3 may be an ingot target or a sintered target. The number, size, arrangement, etc. of the targets 3 are not particularly limited, but in this embodiment, the target 3 is made of a single rectangular plate material having an area larger than the substrate W, and is disposed in the vacuum chamber 1 facing the substrate W in the X-axis direction at a predetermined distance (TS distance).

[0035] The backing plate 4 is a metal plate that supports the back surface of the target 3, and is fixed to the vacuum chamber 1 via an insulating member 11. The backing plate 4 is typically joined to the target 3 via a brazing material such as indium. The backing plate 4 is connected to a power supply source 8 having an RF power source or a DC power source installed outside the vacuum chamber 1.

[0036] The multiple magnet units 5 are disposed facing the back surface (non-sputtering surface) of the target 3 via the backing plate 4. The multiple magnet units 5 form a magnetic circuit that forms a magnetic field on the surface (sputtering surface) of the target 3.

[0037] FIG. 2 is an enlarged view of the magnet unit 5. The magnet unit 5 has a first magnet 51, a second magnet 52, and a yoke 53 supporting the first magnet 51 and the second magnet 52. The end of the first magnet 51 on the target 3 side and the end of the second magnet 52 on the target 3 side are magnetized so as to have opposite magnetic poles. The shapes and arrangements of the first magnet 51 and the second magnet 52 are not particularly limited, but in this embodiment, the first magnet 51 is formed in a linear shape extending in the Z-axis direction, and the second magnet 52 is formed in a rectangular ring shape so as to surround the periphery of the first magnet 51. The shapes and numbers of the first and second magnets 51 and 52 constituting the magnetic circuit are not limited to this example and can be set arbitrarily.

[0038] The adhesion prevention plate 6 is disposed between the substrate holder 2 and the target 3, and prevents the sputtering material (film forming material) flying from the target 3 from adhering to the inner surface of the side wall of the vacuum chamber 1 and the outer peripheral region of the substrate W (the peripheral portion of the substrate holder 2), and defines a plasma space P in which plasma is generated between the target 3 and the substrate holder 2. The vacuum chamber 1 is fitted with a gas introduction line 9 that introduces a sputtering gas such as Ar (argon) from a gas source 9s into the plasma space P.

[0039] When a film is formed on a substrate W by the sputtering apparatus 100, a sputtering gas is introduced from a gas introduction line 9 into a plasma space P, and an RF power supply or a DC power supply is input from a power supply source 4 to the target 3 via a backing plate 4, thereby generating a magnetron discharge in the plasma space P. A plurality of magnet units 5 arranged on the rear side of the target 3 form a magnetic field on the surface of the target 3 that is perpendicular to the electric field, and confines electrons in the plasma to the vicinity of the surface of the target 3. This increases the electron density even with a small sputtering power, and increases the amount of ions entering the target.

[0040] In a magnetron sputtering device, the higher the horizontal magnetic flux density (magnetic flux density perpendicular to the electric field) on the target surface (sputtering surface), the higher the erosion rate of the target surface by plasma, and therefore more film material is sputtered from the target surface, enabling high-speed film formation on the substrate surface. Typically, the higher the magnetic flux density of the horizontal magnetic field B of each magnet unit 5 in an area on the surface of the target 3, the higher the film deposition rate on the surface area of ​​the substrate W facing that area tends to be relative to other surface areas. For this reason, in order to make the film quality distribution on the substrate W uniform, it is necessary to strictly control the magnetic flux density distribution of the horizontal magnetic field B on the surface of the target 3.

[0041] [Explanation that film quality distribution can be adjusted by adjusting the position of the magnet unit in the X-axis direction] For example, when the position of the magnet unit in the X-axis direction is fixed, the distance from the target surface to the magnet unit gradually decreases as erosion of the target surface progresses, resulting in a higher horizontal magnetic flux density on the target surface. Also, as shown in Figures 3(A) and (B), the erosion 3e progresses faster in areas of the target surface with higher horizontal magnetic flux density, so the difference in horizontal magnetic flux density on the surface of the target 3 becomes more pronounced over time. Therefore, the uniformity of the film deposited on the substrates W tends to deteriorate as the number of substrates processed increases.

[0042] Therefore, as shown in FIG. 3(C), in order to lower the horizontal magnetic flux density in the surface region of the target 3 where the erosion 3e progresses at a high speed, the magnet unit 5 constituting the magnetic circuit is moved in a direction away from the surface of the target 3, thereby suppressing the accelerated increase in the horizontal magnetic flux density in that region and achieving uniformity in the amount of film deposition.

[0043] In addition, when some or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, the horizontal magnetic flux density in the surface region of the target 3 can be adjusted not only by adjusting the position of the magnet unit 5 in the X-axis direction but also by adjusting the magnitude and direction of the current flowing into the coils constituting the first magnet 51 and the second magnet 52, thereby making it possible to homogenize the amount of film deposition.

[0044] [Explanation that film quality distribution can be adjusted by adjusting the oscillation of the magnet unit in the Y-axis direction] Since the utilization efficiency of the target 3 is low when only a limited area of ​​the target 3 is eroded, a technique is known in which the magnet unit 5 is swung in the Y-axis direction to erode a wider area (see Patent Document 1).

[0045] Generally, erosion caused by a single magnet unit 5 oscillating in the Y-axis direction at a constant speed is fastest at the center of the oscillation, so the target surface shape becomes bowl-shaped. Figures 4(A) and (B) respectively show the change in the surface shape of the target 3 a predetermined time after the start of sputtering of the target 3, and the time change in the position of the magnet unit 5 in the Y-axis direction relative to the target 3. Since the speed at which the surface of the target 3 and the magnet unit 5 approach each other is fast in the center of the bowl of the surface of the target 3, the difference in the progression speed between the erosion center 3e-center and both erosion sides 3e-side becomes more noticeable over time, as shown in Figure 4(B).

[0046] Therefore, if oscillation continues at a constant speed, the balance between the progression speeds of the erosion center 3e-center and both erosion side portions 3e-side changes, and as the erosion progresses, the difference between these speeds becomes even more pronounced, causing a change in the film quality distribution and reducing the target utilization efficiency.

[0047] Therefore, as shown in Fig. 4(C), in order to keep the speed of progress of the erosion center 3e-center and both sides 3e-side erosion balanced, the magnet unit 5 is made to stay longer around the erosion both sides 3e-side by lengthening the oscillation distance in the Y-axis direction and / or slowing the moving speed at both ends of the oscillation, thereby suppressing the change in the film quality distribution and maintaining a homogeneous film quality. Specifically, it is possible to employ a method such as lengthening the time that the magnet unit 5 stays around the end of the oscillation (see Countermeasure Example 1 in Fig. 4(C)), setting a time for the magnet unit 5 to stop at the end of the oscillation (see Countermeasure Example 2 in the same), lengthening the oscillation width of the magnet unit 5 (see Countermeasure Example 3 in the same), or any combination of these Countermeasure Examples 1 to 3.

[0048] Furthermore, when some or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, adjusting the current flowing through the coils constituting the first magnet 51 and the second magnet 52, which changes depending on the position of the magnet unit 5 during oscillation (hereinafter, referred to as the inflow current fluctuation pattern), has the same effect as adjusting the movement pattern of the magnet unit 5 in the Y-axis direction. Specifically, the change in film quality distribution can be suppressed by increasing the current when the magnet unit 5 is near the end of the oscillation and decreasing the current when it is near the center of the oscillation.

[0049] As described above, in order to maintain the uniformity of the film quality, it is important to change the setting conditions of the magnet unit 5, such as the position of the magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current fluctuation pattern, over time.

[0050] However, it is difficult to accurately predict the progress of erosion because the rate at which erosion progresses is affected by various factors such as pressure, applied voltage, amount of sputtering gas inflow, target constituent material, target quality, etc. In addition, erosion progresses faster in areas with higher horizontal magnetic flux density, so the difference between the actual and predicted erosion progress accelerates over time.

[0051] Therefore, it is difficult to preset the optimal magnet unit's X-axis position, Y-axis movement pattern, and inflow current or inflow current fluctuation pattern as a function of time, and in reality, it is necessary to periodically perform a series of operations to check the deposition state of the deposited substrate, stop the apparatus, and adjust the magnet unit's X-axis position, Y-axis movement pattern, and inflow current or inflow current fluctuation pattern. The implementation of such operations is one of the causes of reduced equipment operation rate, and this problem is more likely to occur as the substrate becomes larger.

[0052] In this embodiment, therefore, in order to improve the deposition uniformity and the apparatus operating rate, the sputtering apparatus 100 is configured as follows.

[0053] [Details of the sputtering equipment] (Magnet unit) 5 is a front view of the arrangement of a plurality of magnet units 5 as viewed from the X-axis direction. In the example shown in the figure, each magnet unit 5 is composed of a first block 5a elongated in the height direction (Z-axis direction) and a pair of second blocks 5b arranged at both ends of the first block 5a, and the first and second magnets 51 and 52 shown in FIG. 2 are arranged in each of these blocks 5a and 5b. Then, a plurality of magnet units 5 (9 pairs in the illustrated example) each consisting of a pair of the first block 5a and the pair of second blocks 5b are arranged in the horizontal direction (Y-axis direction). Therefore, the magnetic circuit arranged on the back surface of the target 3 is divided into a total of 27 places.

[0054] In each magnet unit 5, the length of the first block 5a along the Z-axis direction is longer than that of the second block 5b, but is not limited to this, and each block 5a, 5b may be formed to have the same length. The number of blocks constituting each magnet unit 5 is not limited to three, and may be two, or four or more. The number of magnet units 5 arranged is not limited to nine, and may be less or more than nine. In other words, the number of divisions of the magnetic circuit composed of multiple magnet units 5 and the size of the divided magnetic circuits are not limited to the illustrated example, and can be arbitrarily set depending on the size of the target 3 or substrate W, the position on the substrate W where the deposition amount is to be adjusted, the in-plane distribution of the deposition amount on the substrate W as a target, and the like.

[0055] The sputtering apparatus 100 further includes an adjustment unit 10 capable of individually adjusting the relative distances of the first and second blocks 5a, 5b of each magnet unit 5 to the target 3, and a control device 20 that controls the adjustment unit 10.

[0056] (Adjustment unit) FIG. 6 is a plan view showing a schematic configuration of the adjustment unit 10 as viewed from the Z-axis direction. The adjustment unit 10 is disposed outside the vacuum chamber 1, and has a plurality of driving units 11 disposed corresponding to the first and second blocks 5a, 5b of each magnet unit 5. Each driving unit 11 is, for example, configured with a driving cylinder or a driving motor having driving shafts 11a and 11b whose one ends are connected to the first and second blocks 5a, 5b. The driving shaft 11a moves the first and second blocks 5a, 5b in a direction approaching or moving away from the target 3 by expanding and contracting in the X-axis direction. The driving shaft 11b moves the first and second blocks 5a, 5b in a direction horizontal to the target 3 by expanding and contracting in the Y-axis direction.

[0057] Furthermore, when some or all of the magnets constituting each magnet unit 5 are electromagnets, the adjustment unit 10 may include a device for adjusting the current flowing through each electromagnet. The device for adjusting the current flowing through the electromagnet may adjust the current flowing through the electromagnet so that a constant current always flows, or may adjust the inflow current so that it changes in conjunction with the oscillation of the magnet unit 5 in the Y-axis direction.

[0058] The adjustment unit 10 may be configured so that an operator manually adjusts the X-axis position, Y-axis movement pattern, and inflow current or inflow current fluctuation pattern of each magnet unit 5, or may automatically adjust the X-axis position, Y-axis movement pattern, and inflow current or inflow current fluctuation pattern based on a control command from the control device 20.

[0059] (Control device) The control device 20 is configured with a computer including a CPU (Central Processing Unit), an internal memory, an input / output interface, etc. In this embodiment, the control device 20 controls the operation of the entire sputtering apparatus 100 including the adjustment unit 10, the vacuum pump 7, the power supply source 8, and the gas introduction line 9.

[0060] 7 is a block diagram showing the configuration of the portion relating to the present invention among the functions of the control device 20. The control device 20 has an input unit 21, an optimal solution calculation unit 22, and an output unit .

[0061] The input unit 21 has a function of acquiring various film formation conditions when a film was formed on each substrate and measurement values ​​of the film quality formed on each substrate from the sputtering apparatus 100. In addition, when the film quality formed on each substrate is measured by a measurement device other than the sputtering apparatus 100, the control device 20 is connected to the measurement device, and the input unit 21 also has a function of acquiring the measurement values ​​of the film quality formed on each substrate.

[0062] The various film formation conditions under which a film is formed on the substrate include, as setting conditions for each magnet unit 5, at least one of the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current fluctuation pattern, and may also include the type of film formation material constituting the target 3, the consumption of the target 3 (surface shape of the target 3), the applied voltage to the target 3 (voltage applied from the power supply source 8), the inflow of sputtering gas, the pressure inside the chamber, etc.

[0063] The measured values ​​of the film quality formed on each substrate are measured values ​​of the film quality at measurement points at a plurality of specific positions on the substrate W. The arrangement of the measurement points is not particularly limited, but from the viewpoint of managing the distribution of the film quality formed on each substrate, it is desirable that the measurement points are arranged widely on the substrate W and that they include positions where the film quality is maximum or minimum within the surface of the substrate W. These measurement points may be determined in advance before the start of film formation, or may be determined arbitrarily after film formation.

[0064] The optimal solution calculation unit 22 calculates an optimal solution (or optimal value) of the setting conditions for at least one of the magnet units 5 based on input information including at least the setting conditions and measured values ​​of the film quality of the film formation material on the substrate W formed by the sputtering apparatus 100.

[0065] The optimum solution calculation unit 22 has a function of calculating the optimum position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current fluctuation pattern of each magnet unit 5 that can obtain uniformity of the film quality, based on various input information acquired by the input unit 21. Details of the optimum solution calculation unit 22 will be described below.

[0066] The optimum solution calculation unit 22 in this embodiment is composed of a prediction unit 221 , a correction unit 222 , and an optimization unit 223 .

[0067] The prediction unit 221 calculates a predicted value of the homogeneity of the film quality for the set conditions of any of the magnet units. The prediction unit 221 is a function that uses various film formation conditions as arguments and returns a predicted value of the film quality when it is assumed that film formation is performed under those conditions. The method of calculating the predicted value of the film quality is not particularly limited, and in this embodiment, a machine learning device that has previously learned the relationship between various film formation conditions and film quality is used.

[0068] The algorithm of the machine learning device is not particularly limited, and for example, any one of multiple linear regression, neural network, decision tree, and support vector machine, or an ensemble learning model that combines two or more of these, can be applied.

[0069] The arguments of the prediction unit 221 must include the position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current fluctuation pattern of each magnet unit 5. Furthermore, by additionally including deposition conditions that affect the film quality distribution, such as the type of deposition material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during deposition, in the arguments, it is possible to build a machine learning machine with higher accuracy.

[0070] The predicted values ​​of the film quality, which are the return values ​​of the prediction unit 221, are predicted values ​​of the film quality at all measurement points on the actual substrate W. The reason for using the same measurement points as on the actual substrate W is that it is necessary to compare with the actual measurement values ​​of the film quality acquired by the input unit 21.

[0071] A predicted value of the film quality in the actual film formation can be calculated by inputting the actual film formation conditions as arguments of the prediction unit 221. However, the film quality is affected by various factors such as the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, the inflow current or the inflow current fluctuation pattern, the pressure, the applied voltage, the inflow amount of sputtering gas, the target constituent material, and the target quality difference, and it is difficult to measure all of these factors, so that the predicted value of the film quality in the actual film formation rarely matches the measured value.

[0072] Therefore, in order to make the predicted value of the film quality of the actual film formation coincide with the measured value, it is necessary to correct the predicted value of the film quality. The correction unit 222 compares the predicted value of the film quality in the actual film formation with the measured value, calculates the correction parameters, and corrects the predicted value of the film quality. If the accuracy of the prediction by the prediction unit 221 is sufficiently high, the effect of the correction will be small, so the correction method by the correction unit 222 may be simple addition or multiplication.

[0073] It becomes possible to predict the film quality for any film forming conditions by correcting the predicted value of the film quality calculated by the prediction unit 221 using the correction unit 222. Hereinafter, the predicted value of the film quality corrected by the correction unit 222 will be referred to as a corrected predicted value of the film quality.

[0074] The optimization unit 223 searches for film forming conditions that can obtain optimal corrected predicted values ​​of film quality. In this embodiment, a mathematical optimization algorithm is used to search for the X-axis position, Y-axis movement pattern, and inflow current or inflow current variation pattern of each magnet unit 5 that minimizes the statistics representing the homogeneity of the corrected predicted values ​​of film quality. The statistics representing the homogeneity of the corrected predicted values ​​of film quality use (Max-Min) / (Max+Min) or a coefficient of variation, which are homogeneity indices commonly used in the field of sputtering. As the mathematical optimization algorithm, for example, a gradient descent method, a grid search, a brute force method, or Bayesian optimization may be used.

[0075] According to this embodiment, it is possible to obtain information (optimum film-forming conditions) on how the position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current variation pattern of each magnet unit 5 should have been set in order to obtain optimal film quality homogeneity for the actual most recent film-forming. Since erosion of the target 3 progresses over a time span of several days to several weeks, if the time from when the most recent film-forming is performed until the calculation of the optimal film-forming conditions is completed is sufficiently short compared to the progress rate of the erosion, the optimal film-forming conditions are considered to be valid film-forming conditions even at the time when the calculation is completed.

[0076] The output unit 23 transmits the position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current fluctuation pattern of each magnet unit 5 calculated by the optimum solution calculation unit 22 to the adjustment unit 10, and causes the adjustment unit to carry out adjustment.

[0077] By automatically using the control device 20 for each actual film formation data, it is possible to adjust the X-axis position of each magnet unit 5, the Y-axis movement pattern, and the inflow current or inflow current fluctuation pattern before the uniformity of the film quality is significantly impaired, thereby maintaining the uniformity of the film quality.

[0078] Furthermore, by referring to actual deposition results when calculating the optimal solution, it is possible not only to respond to changes over time, but also to automatically absorb individual differences that exist among multiple devices, making it possible to make optimal adjustments for each device.

[0079] FIG. 8 is a flowchart showing an example of a processing procedure executed in the control device 20 of this embodiment.

[0080] The input unit 21 acquires input information (step 101). The input information includes various film formation conditions when films were formed on each substrate and measurement values ​​of the film quality formed on each substrate.

[0081] Next, the optimal solution calculation unit 22 (prediction unit 221) calculates a predicted value of the uniformity of the film quality of the film forming material on the substrate W based on the input information acquired by the input unit 21, and determines whether the uniformity of the film quality is within a target range based on the calculated predicted value (steps 102, 103).

[0082] Next, if the homogeneity of the film quality is not within the target range, the optimal solution calculation unit 22 (correction unit 222) compares the measurement value of the film quality acquired by the input unit 21 with the predicted value calculated by the prediction unit 221, and determines a correction coefficient for correcting the predicted value (steps 104, 105).

[0083] Next, the optimal solution calculation unit 22 (optimization unit 223) searches for an optimal solution that can satisfy the target film quality homogeneity for the setting conditions such as the position of each magnet unit 5 that optimizes the corrected film quality prediction value (step 106).

[0084] Next, the output unit 23 calculates the current adjustment amount for each magnet unit 5 to the above-mentioned optimal solution based on the optimal solution calculated by the optimal solution calculation unit 22, and outputs it to a display unit (not shown) (step 107). Alternatively, the output unit 23 generates a control command based on the calculated optimal solution for each magnet unit 5, outputs the control command to the adjustment unit 10, and sets the setting condition of each magnet unit 5 to the above-mentioned optimal solution.

[0085] As described above, according to this embodiment, it is possible to determine whether or not the homogeneity of the film quality of the material formed on the substrate W is within a predetermined target range, based on input information such as the setting conditions and actual measurement values ​​of each magnet unit 5. Furthermore, based on this information, the optimum solution calculation unit 22 can calculate an optimum solution of the setting conditions of each magnet unit 5 that can obtain the homogeneity of the film quality.

[0086] In the conventional sputtering apparatus (comparison example), the uniformity of the film quality on the substrate W on which the film was formed was evaluated periodically, and if the evaluation result was within the target range (below the control value), the processing was continued as it was, and if the evaluation result was outside the target range (above the control value), the operation of the apparatus was stopped and the position of each magnet unit 5 was adjusted manually. For this reason, the apparatus had to be stopped every time the magnet unit 5 was adjusted, which caused a problem of a decrease in the apparatus operating rate. In addition, since the adjustment of the position of each magnet unit 5 required skill, there was a limit to the improvement of the apparatus operating rate. Furthermore, since the control value could not be set strictly to suppress the decrease in the apparatus operating rate, it was difficult to obtain stable uniformity of the film quality within or between lots.

[0087] In contrast, according to this embodiment, the position of each magnet unit 5 can be automatically adjusted without stopping the operation of the sputtering apparatus 100, so that the operation rate of the apparatus can be significantly improved. In addition, since the homogeneity is evaluated based on the calculated value of the film quality as the sputtering process progresses, it is possible to adjust the position of the magnet unit 5 before the homogeneity of the film quality is significantly impaired. Furthermore, since the control value can be set more strictly than in the comparative example, the variation in homogeneity within or between lots is suppressed, and thus stable film formation with homogeneous film quality can be continued.

[0088] <Second embodiment> Next, a second embodiment of the present invention will be described. Fig. 9 is a schematic cross-sectional view of a sputtering apparatus 200 according to another embodiment of the present invention. In Fig. 9, the X-axis, Y-axis, and Z-axis indicate three axial directions perpendicular to each other, and the Z-axis corresponds to the up-down direction (height direction).

[0089] The sputtering apparatus 200 includes a vacuum chamber 201, a substrate holder 202, a plurality of rotary cathodes RC, and an adhesion prevention plate 206. The plurality of rotary cathodes RC are arranged at equal intervals along the Y-axis direction. Each rotary cathode RC includes a cylindrical target 203, a cylindrical backing tube 204 that supports the inner peripheral surface of the target 203, and a magnet unit 205 arranged inside the target 203.

[0090] The vacuum chamber 201 is connected to a vacuum pump 207 and configured to be capable of evacuating or maintaining the interior at a predetermined reduced pressure atmosphere. The substrate holder 202 is disposed inside the vacuum chamber 201 and supports a substrate W in a vertical position. The vacuum chamber 201 and the substrate holder 202 are typically connected to a ground potential. The substrate W is, for example, a rectangular glass substrate with a width of 1850 mm or more and a length of 1500 mm or more.

[0091] Each target 203 is configured to be rotatable around an axis parallel to the Z-axis direction (in the circumferential direction of the target 203). The target 203 is made of a film forming material for forming a film on the substrate W. Typical examples of the film forming material include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a metal or alloy target having electrical conductivity is used.

[0092] Each backing tube 204 is a metal plate that supports the back surface of the target 203 , and is connected to a power supply source having an RF power supply or a DC power supply (not shown) installed outside the vacuum chamber 201 .

[0093] A plurality of magnet units 205 are arranged inside each target 203 along the axial direction of each target 203. A magnetic circuit is formed to form a magnetic field on the surface (sputtering surface) of the target 203 facing the substrate W. As described with reference to FIG. 2, each magnet unit 205 has a first magnet 51, a second magnet 52, and a yoke 53 supporting the first magnet 51 and the second magnet 52.

[0094] The adhesion prevention plate 206 is disposed around the rotary cathode RC to prevent the sputtering material (film forming material) flying from the target 3 from adhering to the inner surface of the side wall of the vacuum chamber 201 and the outer peripheral region of the substrate W (the peripheral portion of the substrate holder 2), and to define a plasma space P in which plasma is generated between the target 203 and the substrate holder 202. A gas introduction line 209 is attached to the vacuum chamber 201 to introduce a sputtering gas such as Ar (argon) from a gas source 209s into the plasma space P.

[0095] When forming a film on a substrate W using the sputtering apparatus 200, a sputtering gas is introduced into the plasma space P from the gas inlet line 209, each target 3 is rotated around its axis at a constant speed, and an RF power source or a DC power source is applied to the target 203 from the power supply source via the backing tube 204, thereby generating a magnetron discharge in the plasma space P.

[0096] In the sputtering apparatus 200, the target 203 rotates about its axis, so that erosion progresses evenly in the circumferential direction of the target 203. This makes it possible to increase the utilization efficiency of the target 203.

[0097] In this embodiment, as shown in Fig. 10, each rotary cathode RC has a driving unit 211 capable of moving each magnet unit 205 in the radial direction of the target 203 and swinging each magnet unit 205 in the circumferential direction of the target 203. Since each magnet unit 205 is configured to be movable in the radial direction of the target 203, the sputtering rate of the target 203 can be controlled. Furthermore, since each magnet unit 205 is configured to be swingable in the circumferential direction of the target 203, the shape of the film to be formed can be manipulated to some extent. The driving unit 211 is configured to be capable of adjusting the swing width and swing speed of the magnet unit 205.

[0098] [Explanation of how film quality distribution can be adjusted by adjusting the radial direction of the magnet unit] In general, it is desirable for the erosion rates of multiple aligned rotating cylindrical cathodes (rotary cathodes) to be equal, but in some cases equal erosion rates cannot be obtained due to factors that affect the behavior of electrons (distance from the anode or other rotary cathodes), slight differences in the quality of the targets, etc. Also, in some cases, different erosion rates are intentionally set to obtain the desired film quality distribution. As the targets erode, their diameter decreases and the distance from the magnet unit decreases, accelerating the erosion rate. However, if there is a difference in the erosion rate among multiple rotary cathodes, the difference becomes significant over time, causing changes in the film quality distribution. Therefore, in order to maintain a desired balance of erosion rates, it is necessary to adjust the radial position of the magnet unit as erosion progresses. Furthermore, in the case where some or all of the magnets used in the magnet unit are electromagnets, the same effect can be obtained by adjusting the inflow current. In other words, the erosion rate of the target surface can be adjusted by changing the magnitude and direction of the current passed through the electromagnet coil.

[0099] [Explanation of how film quality distribution can be adjusted by adjusting the circumferential oscillation of the magnet unit] The film thickness distribution on the substrate formed by the cylindrical target 1 is affected by the circumferential position of the magnet unit. In general, when the magnet unit is placed in a position facing the substrate, the distribution is symmetrical and bell-shaped, while when the magnet unit is placed in a position rotated from the position facing the substrate, the distribution is asymmetrical and bell-shaped with the peak position shifted in the direction of rotation. This is because the position where the target particles are emitted changes depending on the position of the magnet unit (see Figures 11(A) and (B)). A technique is known that utilizes this property to manipulate the film thickness distribution obtained by oscillating the magnet unit in the circumferential direction during film formation (Figure 12(A)). As the erosion of the target progresses, the diameter of the target shrinks, and the film thickness distribution changes accordingly. In general, the film thickness distribution changes to a gentler bell shape as the particle emission position moves away from the substrate (Fig. 12(B)). To counter this type of change, it is effective to adjust the circumferential oscillation pattern of the magnet unit (Fig. 12(C)). As erosion progresses, it is possible to maintain the film thickness distribution by reducing the oscillation width of the magnet unit and adjusting the oscillation speed so that the magnet unit remains in a position facing the substrate for a long period of time. Furthermore, in the case where some or all of the magnets used in the magnet unit are electromagnets, the same effect can be obtained by adjusting the pattern of the inflow current according to the swing position.

[0100] The above-mentioned radial position of the magnet unit, circumferential oscillation pattern, and inflow current or inflow current variation pattern are concepts corresponding to the X-axis position, Y-axis movement pattern, and inflow current or inflow current variation pattern of each magnet unit 5 shown in the first embodiment. Therefore, if the above description of the first embodiment is interpreted in a reverse manner, it can be seen that the first embodiment can also be applied to a rotary cathode. Similarly, this embodiment can also be applied to a planar cathode (first embodiment).

[0101] [Control Unit] The sputtering apparatus 200 of this embodiment further includes a control device 220 that controls the positions of the magnet units 5. Fig. 13 is a block diagram showing the configuration of the portion of the control device 220 that is related to the present invention, among its functions. The control device 220 includes an input unit 21, an optimal solution calculation unit 22, and an output unit 23, similar to the first embodiment.

[0102] In this embodiment, the configuration of the optimal solution calculation unit 22 is different from that of the first embodiment. The optimal solution calculation unit 22 in this embodiment is composed of a prediction unit 221, a state estimation unit 224, and an optimization unit 223. In addition, the function of the prediction unit 221 is also different from that of the first embodiment.

[0103] The prediction unit 221 of this embodiment is a function that takes the deposition conditions and the equipment state, which is a hidden parameter, as arguments and returns a predicted value of the film quality when it is assumed that the film is deposited under those deposition conditions and equipment state. The method of calculating the predicted value of the film quality is based on a mathematical model that reproduces physical phenomena related to sputtering by a program.

[0104] The hidden parameters, or equipment states, are represented as vectors by modeling physical quantities, such as the progress of target erosion, that are known to affect film formation but whose values ​​are unknown due to the absence of measuring equipment, or completely unknown factors that affect film formation but are modeled using white noise.

[0105] By inputting the film formation conditions and appropriate equipment status to the prediction unit 221, it is possible to predict the film quality distribution for any film formation conditions. Since the equipment status, which is the hidden parameter, is usually unknown, it is essential to estimate the equipment status in order to use the prediction unit 221. Therefore, it is the state estimation unit 224 that plays a role in estimating the apparatus state using the actual film formation results.

[0106] The state estimation unit 224 calculates an estimate of the apparatus state based on the actual film formation conditions and film formation results using a maximum likelihood estimation method or a MAP estimation method. The calculation may be performed using various mathematical optimization algorithms such as a gradient descent method, a Markov chain Monte Carlo method, or the like.

[0107] In the first embodiment, the error between the predicted and measured film quality values ​​was compensated for mechanically, whereas in the second embodiment, the problem of why the error occurred can be theoretically explained by estimating the equipment state. Therefore, there is an advantage that the prediction is highly reliable, and even if the actual film formation result is not obtained for a long period of time, the homogeneity of the film quality can be maintained by predicting the transition of the equipment state during that time.

[0108] Both the correction unit 221 of the first embodiment and the state estimation unit 224 of the second embodiment are introduced for the purpose of improving prediction accuracy. Therefore, the state estimation unit 224 can be regarded as one form of the correction unit 221.

[0109] FIG. 14 is a flowchart showing an example of a processing procedure executed by the control device 220 of this embodiment.

[0110] The input unit 21 acquires input information including the film formation conditions and measurement values ​​of the sputtering apparatus 200 (step 201). Next, the optimal solution calculation unit 22 (prediction unit 221) calculates a predicted value of the uniformity of the film quality of the film formation material on the substrate W based on the input information acquired by the input unit 21, and determines whether the uniformity of the film quality is within a target range based on the calculated predicted value (steps 202, 203).

[0111] Next, if the homogeneity of the film quality is not within the target range, the optimal solution calculation unit 22 (state estimation unit 224) calculates (estimates) the film formation conditions that maximize the likelihood of the current equipment state based on the input information acquired by the input unit 21 (step 204).

[0112] Next, the optimal solution calculation unit 22 (optimization unit 223) searches for an optimal solution that can satisfy the target homogeneity of film quality for the setting conditions such as the position of each magnet unit 205 that maximizes the likelihood of the device state (step 205).

[0113] Next, the output unit 23 calculates the current adjustment amount for each magnet unit 205 to the above-mentioned optimal solution based on the optimal solution calculated by the optimal solution calculation unit 22, and outputs it to a display unit (not shown) (step 206). Alternatively, the output unit 23 generates a control command based on the calculated optimal solution for each magnet unit 205, and sets the setting conditions of each magnet unit 205 to the above-mentioned optimal solution via an adjustment unit (not shown).

[0114] Although the embodiment of the present invention has been described above, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made thereto.

[0115] For example, in the above embodiment, the adjustment unit 10 automatically adjusts the position of the magnet unit 5, 205 based on a control command from the control device 20, 220, but the present invention is not limited to this, and an operator may adjust the position of the magnet unit 5, 205. In this case, the position adjustment work can be performed for the magnet unit 5, 205 specified in the control unit 20, 220 based on the adjustment amount calculated by the control unit 20, 220, so that the position adjustment of the magnet unit 5, 205 can be performed quickly regardless of the operator's level of skill.

[0116] In the above embodiment, the control device 20, 220 is configured as a part of the sputtering device 100, but the present invention is not limited to this, and the control device 20, 220 may be configured independently of the sputtering device 100, 200. For example, the control device 20, 220 may be configured as a part of a management device connected to a plurality of sputtering devices via a network. In this case, the evaluation of the homogeneity of the film quality in the plurality of sputtering devices, the calculation of the optimal solution for the position of the magnet unit, the generation of a control command for adjusting the position of the magnet unit, etc. can be performed by a single control device 20, 220.

[0117] Furthermore, in the above first embodiment, an example in which multiple magnet units 5 are arranged for a single target 3 has been described, but the present invention is also applicable to a multi-cathode type magnetron sputtering apparatus in which multiple targets 3 are arranged on the same plane. Even in this case, as shown in schematic form in Figures 15(A) and (B), each magnet unit 5 arranged on the rear surface of each target 3 is configured to be able to move in the X-axis direction and oscillate in the Y-axis direction in accordance with the progress of erosion of each target 3 so as to obtain the desired homogeneity of film quality, thereby obtaining the same effects as those of the first embodiment.

[0118] Furthermore, in each of the above embodiments, examples of application to a magnetron sputtering apparatus in which multiple magnet units are arranged for multiple targets respectively have been described, but the present invention can also be applied to a magnetron sputtering apparatus in which a single magnet unit is arranged for a single target. [Explanation of symbols]

[0119] 1,201…Vacuum chamber 3,203…Target 5,205…Magnet unit 10…Adjustment unit 20,220...Control device 21...Input section 22...Optimal solution calculation section 23...Output section 100,200...Sputtering equipment 221…Prediction Department 222…Correction section 223…Optimization section 224... State estimation unit W…Substrate

Claims

1. One or more targets arranged opposite the substrate and made of a deposition material; one or more magnet units disposed on a rear surface of the target; a control device having an optimal solution calculation unit that calculates an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least one of setting conditions including a position of each of the magnet units, a movement pattern of each of the magnet units, and an inflow current or an inflow current fluctuation pattern of an electromagnet constituting each of the magnet units, and a measurement value of a film quality of a film formed on the substrate by the sputtering device; an adjustment unit capable of individually adjusting the setting conditions of the magnet units based on the optimal solution; Equipped with The optimum solution calculation unit calculates a predicted value of the homogeneity of the film quality for the setting conditions of each of the arbitrary magnet units, derives the setting conditions of each of the magnet units that can satisfy a predetermined film quality homogeneity based on the predicted value, and corrects the predicted value based on the input information. Sputtering equipment.

2. 2. The sputtering apparatus according to claim 1, The optimal solution calculation unit corrects the predicted value by estimating a state of the sputtering apparatus based on the input information. Sputtering equipment.

3. The sputtering apparatus according to claim 1 or 2, The measurement value of the film quality of the film-forming material on the substrate includes measurement data on the film quality of the film-forming material at a plurality of measurement points set in advance on the substrate. Sputtering equipment.

4. 4. The sputtering apparatus according to claim 3, The film quality includes at least one of a film thickness, a sheet resistance, a light transmittance, a film stress, a refractive index, an etching characteristic, and a film density. Sputtering equipment.

5. The sputtering apparatus according to any one of claims 1 to 4, The optimum solution calculation unit calculates the optimum solution using a machine learning device that has previously learned the relationship between film formation conditions and film quality. Sputtering equipment.

6. The sputtering apparatus according to any one of claims 1 to 5, The input information further includes at least one of the type of the film-forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the pressure during film formation. Sputtering equipment.

7. A method for controlling a sputtering apparatus including one or more targets arranged opposite a substrate and made of a film forming material, and one or more magnet units arranged on a rear surface of the target, comprising: Calculating an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least setting conditions including a position of each of the magnet units, a movement pattern of each of the magnet units, and at least one of an inflow current or an inflow current fluctuation pattern of an electromagnet constituting each of the magnet units, and a measurement value of a film quality of a film formed on the substrate by the sputtering apparatus; The setting conditions of the magnet units are individually adjusted based on the optimal solution. A method for controlling a sputtering apparatus, comprising the steps of: In the process of calculating the optimal solution for the setting conditions, Calculating a predicted value of the uniformity of the film quality for the set conditions of each of the arbitrary magnet units; deriving the setting conditions for each of the magnet units that can satisfy a predetermined film quality uniformity set in advance based on the predicted values; The predicted value is corrected based on the input information. A method for controlling a sputtering apparatus.

8. A control device for controlling a sputtering apparatus including one or more targets arranged opposite a substrate and made of a film forming material, and one or more magnet units arranged on a rear surface of the targets, an optimal solution calculation unit that calculates an optimal solution of the setting conditions for at least one of the magnet units based on input information including at least one of the setting conditions including the position of each of the magnet units, the movement pattern of each of the magnet units, and the inflow current or the inflow current fluctuation pattern of the electromagnets constituting each of the magnet units, and the measured value of the film quality of the film formation material on the substrate formed by the sputtering apparatus; Equipped with The optimum solution calculation unit calculates a predicted value of the homogeneity of the film quality for the setting conditions of each of the arbitrary magnet units, derives the setting conditions of each of the magnet units that can satisfy a predetermined film quality homogeneity based on the predicted value, and corrects the predicted value based on the input information. Control device for sputtering device.

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