Laser beam filtering patterns suitable for supercapacitor manufacturing

Abstract

Methods and apparatus, including manufacturing processes, equipment, and products. The manufacturing processes and apparatus are configured for producing components with very high precision using a laser beam. Embodiments of the manufacturing processes and apparatus provide improved methods for the fabrication of supercapacitors with critical dimensions on the order of 1 to 50 microns, which can store electricity at very high energy densities using a modified laser beam. Using the manufacturing processes and equipment, the proposed improvements allow key components to be produced thousands of times faster than can be achieved using conventional processes, resulting in production times suitable for mass production.

Description

[Technical field]

[0001] The present invention relates to a manufacturing process, equipment for manufacturing the product, and a method and apparatus comprising the product. The manufacturing process and apparatus are configured for manufacturing components with very high precision using a laser beam. Embodiments of the manufacturing process and apparatus provide an improved method for the manufacture of supercapacitors with critical dimensions on the order of 1-50 microns that can store electricity at very high energy densities using a modified laser beam. Using the manufacturing process and equipment, the proposed improvements allow key components to be manufactured thousands of times faster than can be achieved using conventional processes, resulting in manufacturing times suitable for mass production. [Background technology]

[0002] Laser beams are widely applied in many different fields in the manufacture of all kinds of small and large parts made from a wide variety of materials. Lasers have proven both reliable and accurate and have rapidly expanded in many fields to become the industry standard method for manufacturing parts or components.

[0003] Lasers offer many advantages, allowing the user to select various levels of power, wavelength, pulse duration, and beam width to achieve the desired result, whether it be cutting, engraving, material removal, cleaning, drilling, welding, and many other options. Laser sources with all sorts of characteristics in terms of power, wavelength, modulation, advanced optics, and control systems have been perfected and are now commercially available, allowing the generation of laser beams according to the needs of a particular process and the ability to position them accurately at relatively high speeds to meet the demands of most applications.

[0004] However, producing very high-precision parts poses formidable challenges that cannot so far be met by available laser manufacturing processes. In particular, the production of supercapacitors using materials such as graphene requires a large number of very thin tracks, with width and depth dimensions of less than 50 microns, cut from a graphene slab.

[0005] The tracks form a structure of two electrodes, each with a very large number of intertwined fringes, supporting the electrolyte, and made as thin as possible so that more fringes can be accommodated in a given volume to produce high-performance supercapacitors as needed. The cuts required to separate adjacent fringes must be very precise and not leave any unwanted residue that could cause short circuits in the finished structure. The cuts also need to be made in a gentle, controlled manner to avoid damaging the delicate structures, which could make the electrolyte less accessible and therefore negatively affect the performance of the device.

[0006] This means that the laser beam used to perform the work can only use a certain amount of power per unit area, which limits the cutting speed and depth of the cut. Since it is advantageous to use thicker slabs to increase the amount of active material in the supercapacitor, the cutting speed and depth limitations create compounding problems for production time. A very narrow beam of limited power, narrow enough to detach the fringes to form each electrode, must be made to follow a very precise path that can be hundreds of thousands of meters long in most cases in total to produce the required number of fringes within a three-dimensional volume of only a few centimeters of graphene or other conductive material. Moreover, this beam must pass the same path precisely many times to achieve the goal of cutting completely cleanly along each channel to the bottom of the slab. Depending on the size of the structure, it can take hours or days to produce the required parts. This is not practical for mass production of affordable devices.

[0007] An obvious possibility would be to use multiple laser beams, but this is not easy and would cause serious problems. The alignment of the multiple individual beams must be perfect; if even one beam is misaligned, the result could be poor performance of the manufactured part, and problems could very easily arise that would render the part inoperable. This is made even more difficult as the essential requirements for both beam positioning accuracy and beam travel speed tend to push the limits of laser positioning systems, and at high speeds there tends to be some jitter in the effective beam positioning.

[0008] Another issue is maintenance: because positioning systems must constantly operate near their limits for extended periods of time, normal wear and tear can result in frequent realignment of the beam and periodic replacement of affected components, resulting in maintenance downtime and increased operating costs.

[0009] Splitting a laser beam into multiple parallel beams using advanced optics is also less than satisfactory. Optical devices capable of producing thousands of perfectly parallel beams are difficult to build and expensive to purchase. The optical design parameters must be very finely tuned to the laser's wavelength, power, etc., resulting in only one fixed beam configuration. Many different optics may be required to manufacture all the features of a part design, and integrating all these parts with the required level of precision in a streamlined production line is very difficult. The fact that these multiple beam optical devices can only perform one task for one particular part results in less flexibility, as manufacturers are required to manufacture many different components for different applications, thus requiring an excessive number of custom devices and custom production lines with corresponding cost implications.

[0010] Even if a solution could be found to align multiple beams and operate them with reduced downtime, in practice this may still not be enough since it is not possible to operate so many beams simultaneously on a given part for many reasons including heat dissipation, laser attenuation due to vaporized gas clouds created by too many lasers, and cost. To make supercapacitors made with materials such as graphene economical to produce with lasers, a solution is needed that can achieve a thousand times the manufacturing performance at an affordable price. Summary of the Invention [Problem to be solved by the invention]

[0011] Laser beams have been widely used in manufacturing processes for decades. There are many options to choose from in wavelengths, power levels, pulse widths, focusing and positioning devices. This wide variety of options of equipment and configurations fits the needs of most applications and gives very good results, which is the main reason why lasers are successfully integrated into many different areas of manufacturing processes such as cutting, cleaning, engraving, welding, measuring, and many others.

[0012] While there are many variations in the equipment, configurations, and materials, most applications share the common aspect that a laser beam is generated, collimated, focused, directed at a target, and stopped once the intended target is achieved. In some cases, the laser beam is pulsed for a convenient period, which may be very short, to achieve the intended result. In most cases, however, it is either a single beam that strikes the target, or a beam made up of a relatively small number of rays that are generated using an optical device to split the original beam in a very specific and fixed manner given by the design of the optical device.

[0013] An important part of a typical laser manufacturing apparatus is a control system that can deflect the laser beam using mirrors or prisms, precisely position the beam where it is intended to land, and simultaneously move the mirrors or prisms so that the beam can be moved relatively quickly without losing precision in order to increase production speed.

[0014] Despite this flexibility, challenges are encountered when using existing laser systems to fabricate smaller sized components with numerous tiny and intricate details, such as graphene supercapacitors. A laser beam has been proposed to build graphene supercapacitors by either cutting supercapacitor fringes from a piece of material containing graphene, or by drawing the fringes into a block of graphene oxide. In the latter case, heating the material with a laser reduces graphene oxide, a material that does not conduct electricity, to graphene, a material that is a good conductor of electricity.

[0015] Although graphene oxide reduction is easier to implement, it has a major drawback: the technique produces a two-dimensional (2D) supercapacitor. Because the graphene oxide remains in the structure, only the top of the reduced material, in the areas hit by the laser, forms graphene tracks that are accessible to the electrolyte. Because the energy storage capacity of a supercapacitor is proportional to the active area of ​​graphene in contact with the electrolyte, this technique cannot compete with alternative methods that produce three-dimensional (3D) graphene structures in which all exposed graphene layers have access to the electrolyte.

[0016] Such structures could in principle be made by cutting a thick slab of graphene into many thin fringes, leaving a channel between any two adjacent fringes, which then could be filled with electrolyte. That is the goal of graphene supercapacitor makers to produce 3D graphene lattices with very high aspect ratios and higher energy storage capabilities than 2D supercapacitors.

[0017] However, the challenge of cutting a thick slab of graphene into many tiny fringes is significant. For best results, the fringes must be as thin as possible, orders of magnitude smaller than the other dimensions of the device. This means that mechanical cutting tools cannot be used. Particle beams ion or electron beams, or laser beams are the only possibilities. Laser beams are more developed for manufacturing, are more easily available, and therefore tend to be cheaper and more effective than electron or ion beams. Although lasers seem like the best choice in this situation, the challenge remains very difficult.

[0018] Focusing is a major challenge: producing very narrow laser beams requires very precise collimation and focusing, and the required optics result in very short focal lengths that are incompatible with attempting to cut very high aspect ratio structures. Focusing issues impose limitations on the aspect ratio and limit the maximum thickness of material that can be cut relative to the beam diameter using conventional laser systems.

[0019] However, the goal of a good supercapacitor remains the same: a high aspect ratio or a thickness much greater than the beam width. For the purposes of understanding other implications of using a high aspect ratio, assuming that the focusing problem can somehow be solved, the next paragraphs follow with calculations for a hypothetical example.

[0020] The graphene slab to be cut has dimensions of 10 cm long by 5 cm wide and 1 cm thick, about the size of a typical handheld device battery; assuming one fringe dimension is in the range of 1 micron, the fringes are four orders of magnitude smaller than the other dimensions, resulting in an aspect ratio of 1:10,000 between the fringe width and the slab thickness, which is very high indeed.

[0021] Assuming that a 1 μm thin laser beam can be generated, positioned and focused with great precision to cut the channels separating the fringes, a cut 24999 x 10 cm long would be required to create all 25000 fringes that are 5 cm wide. Assuming a maximum laser speed of 1 m / s, one pass would take 2499 seconds or about 42 minutes.

[0022] The problem is complicated because at 1 m / s, the laser beam cannot cut deep into the material, necessitating high levels of power that can damage the delicate structure being created. Using high power can cause the structure to become saturated with excess heat at a single point, while the surrounding area becomes brittle as it heats up to near its melting point. Furthermore, too much power can create too much vaporized material within the irradiated laser spot that does not have time to escape the structure, creating pressure waves that distort the nearby fragile partially melted material. Furthermore, the vaporized material created absorbs some of the incident power, reducing the effective power and therefore the ability to remove additional material.

[0023] As a consequence, at a reasonable power level of 1 m / s, the laser beam can only cut a thin layer of material, requiring multiple passes to complete the structure. Assuming a cut value of 10 μm per pass, an achievable value taking into account practical focusing limitations, is that a full cut to 1 cm would require 1000 passes, resulting in a time required to complete a structure that would operate 24 hours a day of around 29 days.

[0024] Even assuming a highly optimistic and unlikely improvement of tenfold laser speed and another tenfold increase in the amount of material removed per pass, ignoring the very demanding alignment and synchronization challenges between all the beams and focusing limitations, and using multiple laser beams simultaneously, the manufacturing time is still too long and simply not practical for mass production, especially when you consider that the calculations in the above paragraph were done for a single supercapacitor with dimensions compatible with a handheld device. The challenge of mass producing devices for use in handheld devices, but also in electric vehicles, solar arrays, wind turbines, and other applications that require much larger power storage capacities and therefore larger device sizes, is even more challenging. A better solution is needed. [Means for solving the problem]

[0025] An object and advantage of the present invention is a filtering device comprised of one or more filtering patterns that act as a template for manufacturing specific parts by a process of laser cutting.

[0026] Another object and advantage of the present invention is to use several different filtering devices, each having a specific design, to manufacture the entire part or specific areas of the part by the laser cutting process.

[0027] Another object and advantage of the present invention is a filtering device comprised of one or more filtering patterns that perform a function similar to a beam splitter and collimator for a laser beam.

[0028] Another object and advantage of the present invention is to use a filtering device comprised of one or more filtering patterns having a first filtering pattern positioned at an angle relative to the laser beam such that the reflected laser beam is not reflected back towards the laser source.

[0029] Another object and advantage of the present invention is a manufacturing method that uses a filtering device comprised of one or more filtering patterns to split one or more laser beams into multiple collimated child laser beams according to a pattern contained in the filtering pattern, and use the child laser beams to perform an intended task of cutting into a material, improving the accuracy and speed of the process.

[0030] Another object and advantage of the present invention is an advanced bilayer graphene supercapacitor fabricated using the proposed method, which uses a filtering device comprised of one or more filtering patterns to split one or more laser beams into multiple collimated child laser beams according to a pattern contained in the filtering pattern, and use the child laser beams to perform an intended task, thereby improving the accuracy and speed of the process.

[0031] Accordingly, the present invention relates to a filtering pattern for collimation of a laser beam having a glass layer; a sealant layer having a pattern; wherein the sealant layer is formed on a surface of the glass layer, the sealant layer designed to absorb the laser beam; wherein the pattern in the sealant layer is formed by a plurality of gaps, the gaps designed to allow the laser beam to pass through the sealant layer and generate incisions on a substrate; and wherein the pattern formed by the plurality of gaps is one-to-one scale with respect to the incisions on the substrate.

[0032] Furthermore, the present invention relates to a filtering device for collimation of a laser beam having a plurality of filtering patterns, each filtering pattern having a pattern formed by a plurality of gaps, the gaps being designed to allow the laser beam to pass through the sealant layer and generate cuts on the substrate, wherein the plurality of filtering patterns are perfectly aligned and positioned at variable distances from each other such that, when viewed from the point of view of the incident laser beam, all filtering patterns appear as a single filtering pattern and corresponding gaps within the filtering patterns appear as a single gap; wherein the filtering device is configured to reflect or absorb a portion of the laser beam entering the plurality of filtering patterns at a divergence angle that is not perpendicular to the plurality of filtering patterns and at an angle that is greater than the angle permitted by the ends of the corresponding gaps of the first and last filtering patterns and less than the maximum divergence angle of the laser source.

[0033] The present invention further relates to a method for manufacturing a supercapacitor using a filtering device and a laser, comprising the steps of: forming a plurality of filtering patterns having gaps in an intended pattern to be created; aligning the plurality of filtering patterns to a laser source; aligning a substrate to the plurality of filtering patterns; emitting a laser beam from the laser source; reflecting or absorbing a portion of the laser beam that encounters a reflecting or absorbing structure in any of the plurality of filtering patterns; and scoring the substrate with a portion of the laser beam that falls into the gap to generate a pattern included in the filtering patterns, resulting in a structure having a first terminal and a second terminal of the supercapacitor. Effect of the Invention

[0034] The proposed invention uses a simple but effective filtering device that acts as a laser beam splitter to generate thousands of child laser beams from a single parent laser beam. The filtering device is constructed with the same geometry as the part being manufactured, allowing multiple laser beams to act simultaneously on different areas of the same part, further reducing manufacturing time. The proposed filtering device also acts as a collimator, reducing the laser divergence angle without the need for complex optics.

[0035] The proposed filtering device acts as a template of the part being manufactured. The filtering device is always kept in the same position relative to the part, so there is no need to precisely control the parent laser beam used. Even if the laser beam moves with jitter, when switched off and on again, or operates poorly synchronized and poorly aligned with other laser beams in the manufacture of a particular part, the filtering device removes all imprecision from the process and allows only the accurate child laser beam to pass through, cutting the part quickly and cleanly.

[0036] The proposed invention has the advantage of being able to produce the intended part very quickly and accurately, in a time frame that is thousands of times shorter than using existing processes, which cannot be achieved in any other way.

[0037] The proposed invention has the advantage of being very simple and cheap, which dramatically reduces the manufacturing cost. Due to its simplicity and low cost, various filtering devices can be easily and quickly constructed to produce supercapacitors with a very wide range of dimensions and specifications to meet the needs of various applications. [Brief description of the drawings]

[0038] Various other objects, features and attendant advantages of the present invention will become more fully appreciated as the same becomes better understood when considered in conjunction with the accompanying drawings, in which like reference characters indicate the same or similar parts throughout the several views, and in which:

[0039] [Figure 1] FIG. 1 is a top view of an embodiment of a substrate having a graphene layer applied thereto in this embodiment, however, layers of other conductive materials may be applied thereto and are within the scope of the present invention, meaning that the invention is not limited to any particular conductive material or other type of material; FIG. 1 shows a through hole in one embodiment of a laser cut filtering device of the present invention;

[0040] [Diagram 2] 2 is a side view of the substrate of the embodiment of FIG. 1 with an applied graphene layer showing the bottom contact in one embodiment of the laser cut filtering device of the present invention;

[0041] [Diagram 3] FIG. 2 is an isometric view of the embodiment of FIG. 1 of a substrate with an applied graphene layer and bottom contact in one embodiment of the laser cut filtering device of the present invention;

[0042] [Figure 4] FIG. 2 is an isometric view of one embodiment of a filtering pattern in one embodiment of the laser cut filtering device of the present invention;

[0043] [Figure 4A] FIG. 2 is a detailed view of one embodiment of a filtering pattern showing a sealant layer in one embodiment of the laser cut filtering device of the present invention;

[0044] [Diagram 5] FIG. 1 is an isometric view of one embodiment of a filtering device of the present invention;

[0045] [Figure 5A] 6 is a cross-sectional view of the filtering device of FIG. 5 showing different propagation of incident light rays with various angles of incidence and entry points in one embodiment of the laser cut filtering device of the present invention;

[0046] [Figure 5B] 6 is a cross-sectional view of an alternative embodiment of the filtering device of FIG. 5 illustrating different propagation of incident light rays with various angles of incidence and entry points in one embodiment of the laser cut filtering device of the present invention;

[0047] [Figure 6] FIG. 1 is an isometric view of an embodiment of a filtering device having a filtering pattern that is tilted along the length of the filtering pattern with respect to the X-axis;

[0048] [Figure 6A] 7 is a cross-sectional view of a filtering device having a filtering pattern tilted relative to the X-axis along the length of the filtering pattern of FIG. 6 , illustrating different incident light ray propagation with various angles of incidence and entry points in an embodiment of a laser cut filtering device of the present invention;

[0049] [Figure 6B] 7 is a cross-sectional view of an alternative embodiment of a filtering device having a filtering pattern tilted with respect to the X-axis along the length of the filtering pattern of FIG. 6 illustrating different incident light ray propagation with various angles of incidence and entry points in an embodiment of a laser cut filtering device of the present invention;

[0050] [Figure 7] FIG. 1 is an isometric view of an embodiment of a laser cut filtering device of the present invention having a filtering pattern that is tilted with respect to the Y-axis along the width of the filtering pattern;

[0051] [Figure 7A]8 is a cross-sectional view of a filtering device having a filtering pattern tilted with respect to the Y-axis along the width of the filtering pattern of FIG. 7 showing different incident light ray propagation with various angles of incidence and entry points in an embodiment of a laser cut filtering device of the present invention;

[0052] [Figure 7B] 8 is a cross-sectional view of an alternative embodiment of a filtering device having a filtering pattern tilted with respect to the Y-axis along the width of the filtering pattern of FIG. 7 showing different incident light propagation with various angles of incidence and entry points in an embodiment of a laser cut filtering device of the present invention;

[0053] [Figure 8] FIG. 2 is an isometric view of an embodiment of an apparatus for laser scoring of the graphene layer coated substrate of FIG. 1 in accordance with an embodiment of the laser scoring filtering device of the present invention;

[0054] [Figure 9] 1 is an isometric view of the resulting laser cutting performed by the apparatus for laser cutting of FIG. 8 on the substrate having the coated graphene layer of FIG. 1 in one embodiment of the laser cutting filtering device of the present invention;

[0055] [Figure 10] FIG. 9 is an isometric view of the embodiment of a laser cutting apparatus of FIG. 8 showing the positioning of the laser beam in one embodiment of the laser cutting filtering device of the present invention;

[0056] [Figure 11] FIG. 11 is an isometric view of a resulting cut path performed by the apparatus for laser cutting of FIG. 10 on a substrate having a coated graphene layer of FIG. 1 in one embodiment of a laser cut filtering device of the present invention;

[0057] [Figure 12] FIG. 2 is an isometric view of one embodiment of an apparatus for laser cutting of the graphene layer coated substrate of FIG. 1 using a prism in one embodiment of the laser cutting filtering device of the present invention.

[0058] [Figure 13] 2 is an isometric view of one embodiment of an apparatus for laser cutting of a substrate having a coated graphene layer of FIG. 1 , producing a linear reflected laser beam in one embodiment of the laser cutting filtering device of the present invention;

[0059] [Figure 14] 2 is an isometric view of one embodiment of an apparatus for laser cutting of a substrate having a coated graphene layer of FIG. 1, producing an angled reflected laser beam in one embodiment of the laser cutting filtering device of the present invention;

[0060] [Figure 15] 2 is an isometric view of an embodiment of an alternative apparatus for laser cutting of a substrate having a coated graphene layer of FIG. 1 using multiple laser beams to generate multiple linearly reflected laser beams in one embodiment of the laser cutting filtering device of the present invention;

[0061] [Figure 16] 16 is an isometric view of a plurality of resulting laser cuts made by the apparatus for laser cutting of FIG. 15 on a substrate having a coated graphene layer of FIG. 1 in one embodiment of a laser cut filtering device of the present invention;

[0062] [Figure 17] 2 is an isometric view of an embodiment of an alternative apparatus for laser scoring of a substrate having a coated graphene layer of FIG. 1, producing an angled reflected laser beam in one embodiment of the laser scoring filtering device of the present invention;

[0063] [Figure 18] FIG. 2 is an isometric view of an embodiment of an alternative apparatus for laser cutting of a substrate having an applied graphene layer of FIG. 1 using multiple laser beams to generate multiple angled reflected laser beams in one embodiment of the laser cutting filtering device of the present invention;

[0064] [Figure 19] FIG. 1 is an isometric view of one embodiment of a substrate having an engineered graphene layer in one embodiment of a laser cut filtering device of the present invention;

[0065] [Figure 20] FIG. 2 is an isometric view of another embodiment of a substrate having an engineered graphene layer in one embodiment of the laser cut filtering device of the present invention;

[0066] [Figure 21] FIG. 1 is an isometric view of one embodiment of an element stack in one embodiment of a laser cut filtering device of the present invention; and

[0067] [Figure 22] FIG. 1 is an isometric view of one embodiment of a supercapacitor assembly produced from the laser cutting process of the present invention in one embodiment of the laser cut filtering device of the present invention. [Table 1-1] [Table 1-2] [Table 1-3] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0068] The present invention consists of a device designed to achieve the goal of making a large number of very thin incisions in a thick layer of material. The device can be used for many applications, in particular to create functional double-layer 3D supercapacitors.

[0069] The material can be made of graphene and a binder; a mixture of graphene, carbon nanotubes, fullerenes and activated carbon and a binder; a block of graphite, or a block of another conductive or other type of material. The binder can be a resin, plastic, adhesive, or another substance that acts as a base or solvent for all the components, which can be mixed properly and then become solid after appropriate processing. The material can also be pressed into a solid using a hydraulic press, or smelted and cast into a mold and finally machined into the intended shape. Laser cutting equipment can be used with a wide variety of materials, and the reference to graphene and other components such as carbon nanotubes, activated carbon, fullerenes, graphite, etc. is made only because they are the materials best suited to produce the high energy density double layer supercapacitors that are the subject of this invention.

[0070] For consistency and to avoid unnecessary redundancy, the piece of material to be cut, regardless of its composition, will hereafter be referred to as a graphene layer. This is not to suggest that only graphene is used or that the proposed invention cannot be used to cut other materials such as graphite or homogeneous metals. Thus, the invention is not limited to any particular material.

[0071] Although references may be made to upper, lower, vertical, and horizontal, these terms are used merely to describe relationships and are not intended to limit the operation or use of the invention to any orientation.

[0072] FIG. 1 shows a substrate (30) with a series of through holes (31) formed on both ends of the substrate. The substrate (30) can be made using a very thin plastic film, a thin sheet of glass, or a thin sheet of a suitable insulating material. A graphene layer (32) is then applied on top of the substrate (30) to cover the surface and to flow through all the through holes (31) to cover the surface. If necessary, a surface treatment such as a surface plasma erosion step can be applied to the substrate (30) to ensure that the graphene layer (32) is well bonded to the substrate (30).

[0073] 2 shows the substrate (30) and graphene layer (32) from a side angle to better illustrate the difference between the thickness of the substrate, which is made as thin as possible, and the thickness limit of the graphene layer (32), which is made as thick as possible, depending on whether the graphene layer (32) is suitable for being cut through its entire thickness by the process described above. Beneath the substrate (30), a pair of bottom contacts (33) are made from the same material used to make the graphene layer (32). The through holes (31) create a series of bridges filled with the same material as the graphene layer (32) and the bottom contacts (33), such that the graphene layer (32) and the bottom contacts (33) remain physically and electrically connected throughout the substrate (30).

[0074] 3 shows an isometric view of a graphene layer (32) coated on a substrate (30), with the through hole (31) and bottom contact (33) shown in dashed lines to better illustrate the manufactured part that will be cut using the apparatus of the present invention. The arrows indicate the X-axis along the length and the Y-axis along the width of the graphene layer. These directions are shown in the other figures as well and will be used later for reference and to explain operation.

[0075] FIG. 4 shows an embodiment of a filtering pattern (34) comprised of a glass layer (37) having a portion of the glass layer (37) coated with a mirror layer (38) along the underside of the glass layer (37) having a mirror layer (38) formed into a pattern.

[0076] The glass layer (37) serves as support and oxidation protection for the mirror layer (38). The mirror layer (38) is made of a thin layer of highly reflective material for the laser bandwidth used, and is made on a 1:1 scale template of the structure to be created with the graphene layer. The mirror layer (38) in some embodiments is coated on the underside opposite the glass layer (37) with a dark sealant layer (39) of the same shape as the mirror layer (38) to protect the mirror layer (38) from oxidation and to absorb any laser light that strikes the underside of the mirror layer (38).

[0077] When the embodiment of the filtering pattern (34) shown in FIG. 4 is used to create a graphene supercapacitor, the mirror layer (38) is constructed in the form of two intertwined structures, each consisting of a terminal (40a), (40b) and a set of parallel fringes (41a), (41b), such that each of the two terminals (40a), (40b) is connected to its own set of fringes (41a), (41b), but not to any of the fringes belonging to the other set of terminals. In other words, there is no connection between the two terminals (40a), (40b), which remain physically separated from each other. The patterns of the mirror layer (38) and the sealant layer (39) can be formed through a photoresist process that can achieve a consistent resolution of 50 nanometers, or by etching or other processes, to produce electrodes with sufficient precision and uniformity to realize a supercapacitor with high energy density, as described in U.S. Pat. No. 10,373,765 by the same inventor.

[0078] 4A shows a smaller portion of the filtering pattern 34 at a larger magnification to show in more detail the arrangement of the glass layer 37, the mirror layer 38, and the sealant layer 39. The sealant layer 39, shown with thick diagonal lines, has the same shape as the mirror layer 38, and the sealant layer 39 is disposed directly below the mirror layer 38 to prevent oxidation and the resulting deterioration of the mirror layer 38.

[0079] Figure 5 shows an embodiment of a filtering device (45) made of one or more, in the embodiment shown in Figure 5, three filtering patterns (34a), (34b), (34c). The filtering patterns (34a), (34b), (34c) are all identical and consist of glass layers (37a), (37b), (37c) coated with mirror layers (38a), (38b), (38c) on the underside. The filtering patterns (34a), (34b), (34c) are positioned at variable distances from each other such that they are all perfectly aligned when the mirror layers (38a), (38b), (38c) are viewed from above, and all filtering patterns (34a), (34b), (34c) are positioned in perfect alignment with each other. A cross section perpendicular to the filtering patterns (34a), (34b), (34c) at the point where the mirror layers (38a), (38b), (38c) contain only parallel fringes (41a) is indicated by the cross section line AA.

[0080] Figure 5A shows a cross-section of the filtering device (45) shown in Figure 5 along cross-section line AA. Filtering patterns (34a), (34b), and (34c) are separated by a plane perpendicular to their respective glass layers (37a), (37b), and (37c) and mirror layers (38a), (38b), and (38c). Sealant layers (39a), (39b), and (39c) are visible directly beneath mirror layers (38a), (38b), and (38c).

[0081] The filtering patterns (34a), (34b), (34c) are positioned at variable distances apart from one another in perfect alignment such that, when viewed from above, all of the fringes (41a), (41b), (41c) and other structures of the mirror layers (38a), (38b), (38c) and sealant layers (39a), (39b), (39c) are all perfectly aligned.

[0082] To illustrate the geometry and operation of filtering device 45, a series of incident light rays 48a-48j and, for a reflected incident light ray, a corresponding series of reflected light rays 49d-49j are shown.

[0083] To facilitate identification of the individual fringes, a grid structure with letters and numbers was created. Thus, reference number A11 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference number B15, and fringe (41c) by reference number C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with different letters but the same number.

[0084] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level will be reflected.

[0085] Incident light ray (48a) is perpendicular to all of the filtering patterns (34a), (34b), and (34c) and is not blocked by any of the fringes, so it passes through those filtering patterns and just to the right of the fringe located at position 1. Similarly, incident light ray (48b) is perpendicular to all of the filtering patterns (34a), (34b), and (34c) and is not blocked by any of the fringes, so it passes through those filtering patterns and just to the left of the fringe located at position 2. Incident light ray (48a) and incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0086] The incident ray (48c) passes through all of the filtering patterns (34a), (34b), (34c) and passes immediately to the right of the fringe located at A2 and to the left of the fringe located at C3 at the maximum possible divergence angle relative to the normal of the filtering patterns that is allowed for a ray passing through a given channel. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0087] Incident ray (48d) passes through filtering pattern (34a) and just to the left of the fringe located at A3. Although incident ray (48d) has a smaller divergence angle than the maximum divergence angle of incident ray (48c), it does not pass completely because it passes just to the left edge of channel 2-3. Instead, it strikes the fringe located at B3 and is reflected. The reflected ray (49d) returns and is absorbed by the sealant layer behind the fringe located at A3.

[0088] Incident light ray (48e) passes through filtering pattern (34a) and just to the left of the fringe located at A4. Because incident light ray (48e) has a larger divergence angle than incident light ray (48d), it strikes the fringe located at B4, which is further to the right than incident light ray (48d) strikes the fringe located at B3. As a result, reflected light ray (49e) does not strike the sealant layer behind the fringe located at A4, and continues back towards the laser source, like any other incident light ray that strikes a fringe of filtering pattern (34a).

[0089] Incident ray 48f passes through filtering pattern 34a and just to the left of the fringe located at A6. Incident ray 48f misses the fringe located at B6 and continues until it hits the fringe located at C7, with a divergence angle greater than the divergence angle of incident ray 48e, just enough to pass through filtering pattern 34b. Reflected ray 49f returns, misses the fringes located at B7 and B8, and is absorbed in the sealant layer behind the fringe located at A8.

[0090] Incident ray (48g) passes through filtering pattern (34a) and just to the left of the fringe located at A9. Incident ray (48g) passes through filtering pattern (34b) but has a larger divergence angle than incident ray (48f) which maximizes its chance of hitting the fringe located at C10 without passing through filtering pattern (34c). Reflected ray (49g) returns and is absorbed by the sealant layer behind the fringe located at B11.

[0091] Incident ray (48h) passes through filtering pattern (34a) and just to the left of the fringe located at A12. Incident ray (48h) has a divergence angle greater than that of incident ray (48g), which still exceeds the maximum possible divergence angle striking any fringe. As a result, incident ray (48h) passes through all filtering patterns (34a), (34b), and (34c) and exits filtering device (45) just to the right of the fringe located at C13.

[0092] Incident light ray (48i) passes through filtering pattern (34a) and immediately to the left of the fringe located at A13. Incident light ray (48i) has a larger divergence angle than incident light ray (48h) and at the same time does not hit any fringes. As a result, incident light ray (48i) passes through all filtering patterns (34a), (34b), (34c) and exits filtering device (45) immediately to the left of the fringe located at C15.

[0093] Incident ray (48j) passes through filtering pattern (34a) and passes just to the left of the fringe located at A14. Incident ray (48j) strikes the fringe located at B15 with a divergence angle larger than that of incident ray (48i). Reflected ray (49j) returns and is absorbed by the sealant layer behind the fringe located at A16.

[0094] As shown in Figures 5 and 5A, the embodiment of the filtering device (45) with three filtering patterns (34a), (34b), (34c) allows potentially passing unwanted incident rays with a divergence angle equal to or larger than the divergence angle of the incident ray (48h). In fact, a series of divergence angle ranges are allowed through a first divergence angle range between the divergence angle of the incident ray (48h) and the divergence angle of the incident ray (48i). The laser source used must have sufficient collimation to generate a laser beam with a divergence angle smaller than the divergence angle of the incident ray (48h). If sufficient collimation is not available, additional filtering patterns can be used to ensure that all generated laser beams that hit the filtering device (45) at an unwanted angle are stopped.

[0095] Figure 5B shows a cross-sectional view of an alternative embodiment of the filtering device (45) shown in Figure 5 along cross-section line AA. The filtering patterns (34a), (34b), (34c) are separated by a plane perpendicular to the respective glass layers (37a), (37b), (37c), but unlike the embodiment shown in Figure 5A, no mirror layer is applied, instead there are only sealant layers (39a), (39b), (39c) that absorb laser light.

[0096] The filtering patterns (34a), (34b), (34c) are assembled at varying distances from one another, however, all of the filtering patterns (34a), (34b), (34c) are positioned in perfect registration with one another when viewed from above, such that all of the fringes (41a), (41b), (41c) as well as other structures of the sealant layers (39a), (39b), (39c) are all perfectly aligned.

[0097] To illustrate the geometry and operation of the filtering device 45, a series of incident light rays 48a-48j are shown.

[0098] As mentioned above, a grid structure with letters and numbers was created to facilitate identification of the individual fringes. Thus, reference number A11 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference number B15, and fringe (41c) can be designated by reference number C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with different letters but the same number.

[0099] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level is absorbed.

[0100] Since the incident light ray (48a) is perpendicular to the filtering patterns, it passes through all of the filtering patterns (34a), (34b), and (34c) and is not blocked by any of the fringes, and passes just to the right of the fringe located at position 1. Similarly, since the incident light ray (48b) is perpendicular to all of the filtering patterns (34a), (34b), and (34c) and is not blocked by any of the fringes, it passes through the filtering patterns and passes just to the left of the fringe located at position 2. The incident light ray (48a) and the incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0101] The incident ray (48c) passes through all of the filtering patterns (34a), (34b), (34c) and passes immediately to the right of the fringe located at A2 and to the left of the fringe located at C3 at the maximum possible divergence angle relative to the normal of the filtering patterns that is allowed for a ray passing through a given channel. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0102] Incident ray (48d) passes through filtering pattern (34a) and just to the left of the fringe located at A3. Although incident ray (48d) has a smaller divergence angle than the maximum divergence angle of incident ray (48c), it does not pass completely because it passes just to the left edge of channel 2-3. Instead, it strikes the fringe located at B3 and is absorbed.

[0103] Incident ray 48e passes through filtering pattern 34a and just to the left of the fringe located at A4. Because incident ray 48e has a larger divergence angle than incident ray 48d, it strikes the fringe located at B4, which is further to the right than incident ray 48d strikes the fringe located at B3, and is also absorbed.

[0104] Incident ray 48f passes through filtering pattern 34a and just to the left of the fringe located at A6, misses the fringe located at B6, strikes a fringe located at C7, and continues until absorbed, with a divergence angle greater than the divergence angle of incident ray 48e, just enough to pass through filtering pattern 34b.

[0105] Incident ray 48g passes through filtering pattern 34a and just to the left of the fringe located at A9. Incident ray 48g passes through filtering pattern 34b but does not pass through filtering pattern 34c, striking a fringe located at C10 with a divergence angle greater than the divergence angle of incident ray 48f, which has the greatest chance of being absorbed.

[0106] Incident ray (48h) passes through filtering pattern (34a) and just to the left of the fringe located at A12. Incident ray (48h) has a divergence angle greater than that of incident ray (48g), which still exceeds the maximum possible divergence angle that may strike any fringe. As a result, incident ray (48h) passes through all filtering patterns (34a), (34b), and (34c) and exits filtering device (45) just to the right of the fringe located at C13.

[0107] Incident light ray (48i) passes through filtering pattern (34a) and just to the left of the fringe located at A13. Incident light ray (48i) has a larger divergence angle than incident light ray (48h) and also does not hit all fringes simultaneously. As a result, incident light ray (48i) passes through all filtering patterns (34a), (34b), (34c) and exits filtering device (45) just to the left of the fringe located at C15.

[0108] Incident ray 48j passes through filtering pattern 34a and passes just to the left of the fringe located at A 14. Incident ray 48j encounters a fringe located at B 15 with a divergence angle larger than that of incident ray 48i and is absorbed.

[0109] As shown in Figures 5 and 5B, the embodiment of the filtering device (45) with three filtering patterns (34a), (34b), (34c) allows potentially passing incident rays with a divergence angle equal to or greater than the divergence angle of the incident ray (48h). In fact, a series of divergence angle ranges are allowed through a first divergence angle range between the divergence angle of the incident ray (48h) and the divergence angle of the incident ray (48i). The laser source used must have sufficient collimation to generate a laser beam with a divergence angle smaller than the divergence angle of the incident ray (48h). If sufficient collimation is not available, additional filtering patterns can be used to ensure that all generated laser beams that hit the filtering device (45) at undesired angles are stopped and absorbed by the sealant layers (39a), (39b), (39c).

[0110] In the embodiment shown in Figure 5B, the laser beam is absorbed by the fringes of the sealant layers (39a), (39b), (39c), so depending on the power of the laser source used, some cooling method is necessary to prevent damage to the sealant layers (39a), (39b), (39c). This can be easily achieved, for example, by blowing cold air between the filtering patterns (34a), (34b), (34c).

[0111] Figure 6 shows an embodiment of a filtering device with a filtering pattern (46) tilted with respect to the X-axis, made of one filtering pattern (35a) tilted with respect to the X-axis and one or more filtering patterns, in the embodiment shown in Figure 6, two filtering patterns (34b), (34c). The filtering pattern (35a) tilted with respect to the X-axis is composed of a modified glass layer (42a) and a modified mirror layer (43a).

[0112] The filtering patterns (34b), (34c) are identical and consist of a glass layer (37b), (37c) coated with an underlying mirror layer (38b), (38c). The filtering patterns (34b), (34c) are assembled at variable distances from each other such that they are all perfectly aligned when viewed from above on the mirror layers (38b), (38c), and all of the filtering patterns (34b), (34c) are positioned in perfect registration with each other.

[0113] Since the filtering pattern (35a) tilted with respect to the X-axis is installed at a tilt angle, it is necessary to distort the modified glass layer (42a) and the modified mirror layer (43a) along the X-axis to compensate for the tilt angle of the installation. This distortion extends all structures along the X-axis by a trigonometric function given by the inverse cosine of the tilt angle (secant of the tilt angle). This distortion increases the overall length of the modified glass layer (42a) and the modified mirror layer (43a) and shifts the position of all features by the exact factor required to compensate for the installation at the selected tilt angle. In this way, when viewed from above, the modified glass layer (42a) coincides perfectly with the glass layers (37b), (37c), and the modified mirror layer (43a) coincides perfectly with the mirror layers (38b), (38c), so that the filtering pattern (35a) tilted with respect to the X-axis appears perfectly as the filtering patterns (34b), (34c) from above. Another way to explain this is to say that the projection of filtering pattern (35a) tilted relative to the X-axis along a line perpendicular to filtering patterns (34b) and (34c) has exactly the same shape and coincides perfectly with filtering patterns (34b) and (34c).

[0114] As shown in FIG. 6, due to the angle at which the filtering pattern 35a inclined with respect to the X-axis is disposed, the filtering pattern 35a inclined with respect to the X-axis and the filtering patterns 34b, 34c are assembled at variable distances from each other, and the distance between the filtering pattern 35a inclined with respect to the X-axis and the filtering pattern 34b inclined with respect to the X-axis varies along the X-axis, with the distance becoming shorter on the left and longer on the right.

[0115] FIG. 6A shows a cross-sectional view of a filtering device having a filtering pattern (46) inclined with respect to the X-axis shown in FIG. 6 along the cross-sectional line AA. The filtering pattern (35a) and the filtering patterns (34b), (34c) inclined with respect to the X-axis are divided by a plane perpendicular to the glass layers (37b), (37c). The cross-section cuts through the modified glass layer (42a), the modified mirror layer (43a), and the mirror layers (38b), (38c). The modified sealant layer (44a) and the sealant layers (39b), (39c) are visible directly below the modified mirror layer (43a) and the mirror layers (38b), (38c), respectively.

[0116] All of the elements are positioned in perfect registration with each other when viewed from above such that all of the fringes (41a), (41b), (41c) and other structures of the modified mirror layer (43a), mirror layers (38b), (38c), modified sealant layer (44a) and sealant layers (39b), (39c) are all perfectly aligned.

[0117] Due to the angle at which the filtering pattern 35a inclined relative to the X-axis is positioned, the filtering pattern 35a inclined relative to the X-axis and the filtering patterns 34b, 34c are assembled at variable distances from each other, and the distance between the filtering pattern 35a inclined relative to the X-axis and the filtering pattern 34b varies along the X-axis.

[0118] When cross section AA is taken at a particular point along the length, the distance between filtering pattern (35a) and filtering pattern (34b) angled relative to the X-axis is constant when viewed through the AA cross section line through the width, as shown in Figure 6. The distance between filtering pattern (35a) and filtering pattern (34b) angled relative to the X-axis varies depending on at what point along the length the AA cross section line is taken, which differs from the constant distance between filtering pattern (34a) and filtering pattern (34b) in Figure 5A.

[0119] If the AA cross-sectional line in Fig. 6 is drawn further to the right along the length, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6A will be longer than the actual distance seen in Fig. 6A. On the other hand, if the AA cross-sectional line in Fig. 6 is drawn further to the left, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6A will be shorter than the actual distance seen in Fig. 6A. If the AA cross-sectional line is drawn even further to the left, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6A will be even shorter, and may be shorter than the distance between the filtering pattern (34a) and the filtering pattern (34b) in Fig. 5A.

[0120] To illustrate the geometry and operation of a filtering device having a filtering pattern (46) tilted with respect to the X-axis, a series of incident light rays (48a)-(48j) and a corresponding series of reflected light rays (49d)-(49j) are shown for the reflected incident light rays.

[0121] As mentioned above, a grid structure with letters and numbers was created to facilitate identification of the individual fringes. Thus, reference A7 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference B15 and fringe (41c) by reference C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with the same number but different letters.

[0122] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level will be reflected.

[0123] The varying distance between the filtering pattern (35a) tilted relative to the X-axis and the filtering pattern (34b) along the X-axis, as explained above, affects the performance of a filtering device having a filtering pattern (46) tilted relative to the X-axis seen in FIGS. 6 and 6A, which does not have the same performance as the filtering device shown in FIGS. 5 and 5A, but does offer an improvement in reducing damage to the laser from reflected light.

[0124] To facilitate visualization and understanding of this change in performance which translates into a change in maximum allowable divergence angle, similar incident rays are depicted and similarly numbered in Figures 5A and 6A so that differences in incidence angles, where applicable, can be easily identified.

[0125] The incident light ray (48a) is perpendicular to the filtering pattern (35a) tilted with respect to the X-axis and the other filtering patterns (34b), (34c) and is not blocked by any fringes, so it passes through the filtering patterns and passes just to the right of the fringe located at position 1. Similarly, the incident light ray (48b) is perpendicular to the filtering pattern (35a) tilted with respect to the X-axis and all filtering patterns (34b), (34c) and is not blocked by any fringes, so it passes through the filtering patterns and passes just to the left of the fringe located at position 2. The incident light ray (48a) and the incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0126] An incident ray (48c) passes through the filtering pattern (35a) and other filtering patterns (34b), (34c) tilted with respect to the X-axis at the maximum possible divergence angle relative to the normal of the filtering pattern that is allowed for a ray passing through a given channel, passing immediately to the right of the fringe located at A2 and to the left of the fringe located at C3. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0127] The divergence angle of the incident ray (48c) seen in FIG. 6A is smaller than the divergence angle of the incident ray (48c) seen in FIG. 5A. This is because, at the point of cross section, the filtering pattern (35a) tilted with respect to the X-axis is further away from the filtering pattern (34c) in FIG. 6A than the filtering pattern (34a) is from the filtering pattern (34c) in FIG. 5A, forcing the maximum allowable angle to decrease with increasing distance. FIG. 6A shows that as the distance between the filtering pattern (35a) tilted with respect to the X-axis and the filtering patterns (34b) and (34c) changes along the X-axis, the allowable divergence angle also changes. This effect affects all other incident rays in a similar manner, and similar incident rays are numbered similarly to facilitate comparison between FIG. 5A and FIG. 6A.

[0128] Incident ray (48d) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes just to the left of the fringe located at A3. Incident ray (48d) strikes the fringe located at B3 and is reflected. The reflected ray (49d) returns and is absorbed by the sealant layer behind the fringe located at A3.

[0129] Incident ray (48e) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes just to the left of the fringe located at A4. Because incident ray (48e) has a larger divergence angle than incident ray (48d), it hits the fringe located at B4, which is further to the right than incident ray (48d) hits the fringe located at B3. As a result, reflected ray (49e) does not hit the sealant layer behind the fringe located at A4 and continues back towards the laser source, like any other incident ray that hits a fringe of the filtering pattern (35a) tilted with respect to the X-axis.

[0130] Compared to incident ray (48e) in FIG. 5A, incident ray (48e) in FIG. 6A has a smaller divergence angle due to differences in shape, in particular the inclined filtering pattern (35a) relative to the X-axis and the longer distance between filtering pattern (34b) at the point where the cross section is made, but passes further to the right of the fringe located at A4.

[0131] The incident light ray (48f) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes immediately to the left of the fringe located at A6. The incident light ray (48f) has a larger divergence angle than the incident light ray (48e), which is just enough to pass through all the filtering patterns (34b) and (34c), and exits the filtering device with the filtering pattern (46) tilted with respect to the X-axis just to the left of the fringe located at C7. Compared to the incident light ray (48f) in FIG. 5A, which is reflected and absorbed, the incident light ray (48e) in FIG. 6A has a completely different behavior.

[0132] The divergence angle of the incident light ray (48f) in Fig. 6A is smaller than the divergence angle of the incident light ray (48f) in Fig. 5A because this angle is given by the distance between the left side of fringe A6 and the right side of fringe B6. The distance between the filtering pattern (35a) and the filtering pattern (34b) tilted with respect to the X-axis is longer in Fig. 6A than the distance between the filtering pattern (34a) and the filtering pattern (34b) in Fig. 5A, which allows the incident light ray (48f) with the smaller divergence angle in Fig. 6A to find a gap and pass through all the filtering patterns without hitting all the fringes.

[0133] When the distance between the filtering pattern (35a) and the filtering pattern (34b) tilted with respect to the X-axis changes along the X-axis, taking the cross section AA along different points will result in a change in the distance between the filtering pattern (35a) and the filtering pattern (34b) tilted with respect to the X-axis. As a result, the divergence angle that can pass will change. At a point on the X-axis where the distance between the filtering pattern (35a) and the filtering pattern (34b) tilted with respect to the X-axis is equal to or shorter than the distance between the filtering pattern (34a) and the filtering pattern (34b) in FIG. 5A, the gap will be closed and the incident light ray (48f) will be reflected as in FIG. 5A.

[0134] Incident ray 48g passes through the filtering pattern 35a tilted with respect to the X-axis, just to the left of the fringe located at A9. Incident ray 48g has a larger divergence angle than incident ray 48f, but instead of passing through as incident ray 48f, incident ray 48g strikes a fringe located at C10. Reflected ray 49g returns and does not strike the sealant layer behind the fringes located at B11 and A11, but continues back towards the laser source like any other incident ray that strikes a fringe of the filtering pattern 35a tilted with respect to the X-axis.

[0135] The incident light ray (48h) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes immediately to the left of the fringe located at A12. The incident light ray (48h) has a divergence angle larger than that of the incident light ray (48g), passes through all the filtering patterns (34b), (34c), and leaves the filtering device with the filtering pattern (46) tilted with respect to the X-axis immediately to the right of the fringe located at C13. The divergence angle of the incident light ray (48h) in FIG. 6A is smaller than the divergence angle of the incident light ray (48h) in FIG. 5A, since this angle is given by the distance between the left side of the fringe A12 and the right side of the fringe C13.

[0136] The incident light ray (48i) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes just to the left of the fringe located at A13. The incident light ray (48i) has a larger divergence angle than the incident light ray (48h) and passes through all the filtering patterns (34b), (34c) and exits the filtering device with the filtering pattern (46) tilted with respect to the X-axis between the fringes located at C14 and C15. The divergence angle of the incident light ray (48i) in FIG. 6A is smaller than the divergence angle of the incident light ray (48i) in FIG. 5A, because this angle is given by the distance between the left side of the fringe A13 and the left side of the fringe B14.

[0137] Incident ray (48j) passes through the filtering pattern (35a) tilted with respect to the X-axis, and passes just to the left of the fringe located at A14. Incident ray (48j) strikes the fringe located at B15 with a divergence angle larger than that of incident ray (48i). Reflected ray (49j) returns and is absorbed by the sealant layer behind the fringe located at A16.

[0138] The embodiment of the filtering device with a filtering pattern (46) tilted with respect to the X-axis, with one filtering pattern (35a) and two filtering patterns (34b), (34c) tilted with respect to the X-axis, as shown in Figures 6 and 6A, features a position-dependent behavior along the X-axis, potentially allowing unwanted incident light rays with different divergence angles to pass, depending on the point of incidence along the X-axis. As a result, the laser source used must have better collimation than that required to operate using the device shown in Figures 5 and 5A.

[0139] To improve the performance of the filtering device having the filtering pattern (46) tilted with respect to the X-axis, an additional filtering pattern parallel to the filtering patterns (34b), (34c) can be used to ensure that all laser beams generated by the available laser sources that hit the filtering device having the filtering pattern (46) tilted with respect to the X-axis at an undesired angle are stopped.

[0140] Figure 6B shows a cross-sectional view of an alternative embodiment of a filtering device having a filtering pattern (46) inclined with respect to the X-axis shown in Figure 6 along the AA cross-sectional line. The filtering pattern (35a) and filtering patterns (34b), (34c) inclined with respect to the X-axis are divided by a plane perpendicular to the glass layers (37b), (37c). The cross-section cuts out the modified glass layer (42a) and glass layers (37b), (37c), but unlike the embodiment shown in Figure 6A, the modified mirror layer and mirror layer are not applied, instead there is only the modified sealant layer (44a) and the sealant layer (39b), (39c) that absorbs laser light.

[0141] All of the elements are positioned in perfect alignment with one another when viewed from above, such that all of the fringes (41a), (41b), (41c) and other structures of the modified sealant layer (44a) and sealant layers (39b), (39c) are all perfectly aligned.

[0142] Due to the angle at which the filtering pattern 35a inclined relative to the X-axis is positioned, the filtering pattern 35a inclined relative to the X-axis and the filtering patterns 34b, 34c are assembled at variable distances from each other, and the distance between the filtering pattern 35a inclined relative to the X-axis and the filtering pattern 34b varies along the X-axis.

[0143] When cross section AA is taken at a particular point along the length, the distance between filtering pattern (35a) and filtering pattern (34b) angled relative to the X-axis is constant when viewed through the AA cross section line through the width, as shown in Figure 6. The distance between filtering pattern (35a) and filtering pattern (34b) angled relative to the X-axis varies depending on at what point along the length cross section AA is taken which differs from the constant distance between filtering pattern (34a) and filtering pattern (34b) in Figure 5B.

[0144] If the AA cross-sectional line in Fig. 6 is drawn further to the right, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6B is longer than the actual distance seen in Fig. 6B. On the other hand, if the AA cross-sectional line in Fig. 6 is drawn further to the left, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6B is shorter than the actual distance seen in Fig. 6B. If the AA cross-sectional line is drawn even further to the left, the distance between the filtering pattern (35a) and the filtering pattern (34b) inclined with respect to the X-axis in Fig. 6B becomes even shorter, and may be shorter than the distance between the filtering pattern (34a) and the filtering pattern (34b) in Fig. 5B.

[0145] To illustrate the geometry and operation of a filtering device having a filtering pattern 46 tilted with respect to the X-axis, a series of incident light rays 48a-48j are shown.

[0146] To facilitate identification of the individual fringes, a grid structure with letters and numbers was created. Thus, reference A7 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference B15, and fringe (41c) by reference C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with different letters but the same number.

[0147] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level is absorbed.

[0148] As explained above, the varying distance between the filtering pattern 35a tilted relative to the X-axis and the filtering pattern 34b along the X-axis affects the performance of a filtering device having a filtering pattern 46 tilted relative to the X-axis seen in FIGS. 6 and 6B, which does not have the same performance as the filtering device shown in FIGS. 5 and 5B.

[0149] To facilitate visualization and understanding of this change in performance which translates into a change in maximum allowable divergence angle, similar incident rays are depicted and similarly numbered in Figures 5B and 6B so that differences in incidence angles, where applicable, can be easily identified.

[0150] The incident light ray (48a) is perpendicular to the filtering pattern (35a) tilted with respect to the X-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the right of the fringe located at position 1. Similarly, the incident light ray (48b) is perpendicular to the filtering pattern (35a) tilted with respect to the X-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the left of the fringe located at position 2. The incident light ray (48a) and the incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0151] An incident ray (48c) passes through the filtering pattern (35a) and other filtering patterns (34b), (34c) tilted with respect to the X-axis at the maximum possible divergence angle relative to the normal of the filtering pattern that is allowed for a ray passing through a given channel, passing immediately to the right of the fringe located at A2 and to the left of the fringe located at C3. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0152] The divergence angle of the incident ray (48c) seen in FIG. 6B is smaller than the divergence angle of the incident ray (48c) seen in FIG. 5B. This is because the filtering pattern (35a) tilted with respect to the X-axis is further away from the filtering pattern (34c) in FIG. 6B than the filtering pattern (34a) is from the filtering pattern (34c) in FIG. 5B, forcing the maximum allowable angle to decrease with increasing distance. FIG. 6B shows that as the distance between the filtering pattern (35a) tilted with respect to the X-axis and the filtering patterns (34b) and (34c) changes along the X-axis, the allowable divergence angle also changes. This effect affects all other incident rays in a similar manner, and similar incident rays are numbered similarly to facilitate comparison between FIG. 5B and FIG. 6B.

[0153] An incident ray (48d) passes through the filtering pattern (35a) tilted with respect to the X-axis, passing just to the left of the fringe located at A3. The incident ray (48d) strikes the fringe located at B3 and is absorbed.

[0154] Incident ray 48e passes through filtering pattern 35a, which is tilted with respect to the X-axis, just to the left of the fringe located at A4. Because incident ray 48e has a larger divergence angle than incident ray 48d, it strikes the fringe located at B4, which is further to the right than incident ray 48d strikes the fringe located at B3.

[0155] Compared to the incident light ray (48e) in FIG. 5B, the incident light ray (48e) in FIG. 6B has a smaller divergence angle due to differences in shape, in particular the longer distance between the filtering pattern (35a) and the filtering pattern (34b) which are tilted with respect to the X-axis, but hits the fringe located at B4 at approximately the same point.

[0156] The incident light ray (48f) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes immediately to the left of the fringe located at A6. The incident light ray (48f) has a larger divergence angle than the incident light ray (48e), which is just enough to pass through all the filtering patterns (34b) and (34c), and exits the filtering device with the filtering pattern (46) tilted with respect to the X-axis just to the left of the fringe located at C7. Compared to the incident light ray (48f) in FIG. 5B, which is absorbed, the incident light ray (48e) in FIG. 6B has a completely different behavior.

[0157] The divergence angle of the incident light ray (48f) in Fig. 6B is smaller than the divergence angle of the incident light ray (48f) in Fig. 5B because this angle is given by the distance between the left side of fringe A6 and the right side of fringe B6. The distance between the filtering pattern (35a) and the filtering pattern (34b) tilted with respect to the X-axis is longer in Fig. 6B than the distance between the filtering pattern (34a) and the filtering pattern (34b) in Fig. 5B, which allows the incident light ray (48f) with the smaller divergence angle in Fig. 6B to find a gap and pass through all the filtering patterns without hitting all the fringes.

[0158] When the distance between the filtering pattern 35a and the filtering pattern 34b tilted with respect to the X-axis changes along the X-axis, the distance changes between the filtering pattern 35a and the filtering pattern 34b tilted with respect to the X-axis. As a result, the divergence angle that can pass changes. At a point on the X-axis where the distance between the filtering pattern 35a and the filtering pattern 34b tilted with respect to the X-axis is equal to or shorter than the distance between the filtering pattern 34a and the filtering pattern 34b in FIG. 5B, the gap is closed and the incident light ray 48f is reflected as in FIG. 5B.

[0159] Incident ray 48g passes through filtering pattern 35a, which is tilted with respect to the X-axis, and passes just to the left of the fringe located at A9. Incident ray 48g has a larger divergence angle than the divergence angle of incident ray 48f, but instead of passing through as incident ray 48f, incident ray 48g strikes the fringe located at C10 and is absorbed.

[0160] The incident light ray (48h) passes through the filtering pattern (35a) tilted with respect to the X-axis and passes immediately to the left of the fringe located at A12. The incident light ray (48h) has a divergence angle larger than that of the incident light ray (48g), passes through all the filtering patterns (34b), (34c), and leaves the filtering device with the filtering pattern (46) tilted with respect to the X-axis immediately to the right of the fringe located at C13. The divergence angle of the incident light ray (48h) in FIG. 6B is smaller than the divergence angle of the incident light ray (48h) in FIG. 5B, since this angle is given by the distance between the left side of the fringe A12 and the right side of the fringe C13.

[0161] The incident light ray (48i) passes through the filtering pattern (35a) tilted with respect to the X-axis and immediately to the left of the fringe located at A13. The incident light ray (48i) has a larger divergence angle than the incident light ray (48h) and passes through all the filtering patterns (34b), (34c) and exits the filtering device with the filtering pattern (46) tilted with respect to the X-axis between the fringes located at C14 and C15. The divergence angle of the incident light ray (48i) in FIG. 6B is smaller than the divergence angle of the incident light ray (48i) in FIG. 5B, since this angle is given by the distance between the left side of the fringe A13 and the left side of the fringe B14.

[0162] Incident ray 48j passes through filtering pattern 35a, which is tilted with respect to the X-axis, and passes just to the left of the fringe located at A14. Incident ray 48j encounters a fringe located at B15, which has a divergence angle larger than that of incident ray 48i, and is absorbed.

[0163] As shown in Figures 6 and 6B, the embodiment of the filtering device with a filtering pattern (46) tilted with respect to the X-axis, with one filtering pattern (35a) and two filtering patterns (34b), (34c) tilted with respect to the X-axis, features a position-dependent behavior along the X-axis, potentially allowing unwanted incident light rays with different divergence angles to pass, depending on the point of incidence along the X-axis. As a result, the laser source used must have better collimation than that required to operate using the device shown in Figures 5 and 5B.

[0164] To improve the performance of the filtering device having the filtering pattern (46) tilted with respect to the X-axis, an additional filtering pattern parallel to the filtering patterns (34b), (34c) can be used to ensure that all laser beams generated by the available laser sources that hit the filtering device having the filtering pattern (46) tilted with respect to the X-axis at an undesired angle are stopped.

[0165] Fig. 7 shows an embodiment of a filtering device with a Y-axis tilted filtering pattern (36a) and a Y-axis tilted filtering pattern (47) made of one or more filtering patterns, in the embodiment shown in Fig. 7 two filtering patterns (34b), (34c). The Y-axis tilted filtering pattern (36a) is composed of a modified glass layer (42a) and a modified mirror layer (43a) that are distorted along the Y-axis to compensate for the tilt angle of the installation.

[0166] The filtering patterns (34b), (34c) are identical and consist of a glass layer (37b), (37c) coated with an underlying mirror layer (38b), (38c). The filtering patterns (34b), (34c) are assembled at variable distances from each other such that they are all perfectly aligned when viewed from above on the mirror layers (38b), (38c), and all of the filtering patterns (34b), (34c) are positioned in perfect registration with each other.

[0167] Since the filtering pattern (36a) tilted with respect to the Y axis is installed at a tilt angle, it is necessary to distort the modified glass layer (42a) and the modified mirror layer (43a) along the Y axis to compensate for the tilt angle of the installation. This distortion extends all structures along the Y axis by a trigonometric function given by the inverse cosine of the tilt angle (secant of the tilt angle). This distortion lengthens the overall width of the modified glass layer (42a) and the modified mirror layer (43a) and moves the position of all features by the exact factor required to compensate for the installation at the selected tilt angle. In this way, when viewed from above, the modified glass layer (42a) coincides perfectly with the glass layers (37b), (37c), and the modified mirror layer (43a) coincides perfectly with the mirror layers (38b), (38c), so that the filtering pattern (36a) tilted with respect to the Y axis appears perfectly as the filtering patterns (34b), (34c) from above. Another way to explain this is to say that the projection (36a) of the filtering pattern tilted relative to the Y-axis along a line perpendicular to filtering patterns (34b), (34c) has exactly the same shape and is perfectly aligned with filtering patterns (34b), (34c).

[0168] Due to the angle at which the filtering pattern 36a inclined relative to the Y-axis is positioned, the filtering pattern 36a inclined relative to the Y-axis and the filtering patterns 34b, 34c are assembled at variable distances from each other, such that the distance between the filtering pattern 36a inclined relative to the Y-axis and the filtering patterns 34b, 34c varies along the Y-axis, being shorter toward the front and longer toward the rear of FIG. 11 .

[0169] FIG. 7A shows a cross-section of a filtering device having a filtering pattern (47) tilted with respect to the Y-axis shown in FIG. 7 along the AA cross-section line. The filtering pattern (36a) and filtering patterns (34b), (34c) tilted with respect to the Y-axis are divided by a plane perpendicular to the glass layers (37b), (37c). The cross-section cuts off the modified glass layer (42a), the modified mirror layer (43a), and the mirror layers (38b), (38c). The modified sealant layer (44a) and the sealant layers (39b), (39c) are visible directly below the modified mirror layer (43a) and the mirror layers (38b), (38c), respectively.

[0170] Due to the angle at which the filtering pattern 36a inclined relative to the Y-axis is positioned, the filtering pattern 36a inclined relative to the Y-axis and the filtering patterns 34b, 34c are assembled at variable distances from each other, such that the distance between the filtering pattern 36a inclined relative to the Y-axis and the filtering patterns 34b, 34c varies along the Y-axis, being shorter on the left side and longer on the right side of FIG. 7A.

[0171] All of the elements are positioned in perfect registration with each other when viewed from above such that all of the fringes (41a), (41b), (41c) and other structures of the modified mirror layer (43a), mirror layers (38b), (38c), modified sealant layer (44a) and sealant layers (39b), (39c) are all perfectly aligned.

[0172] To illustrate the geometry and operation of a filtering device having a filtering pattern (47) tilted with respect to the Y-axis, a series of incident light rays (48a)-(48h) and a corresponding series of reflected light rays (49d)-(49f) are shown for the reflected incident light rays.

[0173] To facilitate identification of the individual fringes, a grid structure with letters and numbers was created. Thus, reference number A15 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference number B13, and fringe (41c) by reference number C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with different letters but the same number.

[0174] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level will be reflected.

[0175] The incident light ray (48a) is perpendicular to the filtering pattern (36a) tilted with respect to the Y-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the right of the fringe located at position 1. Similarly, the incident light ray (48b) is perpendicular to the filtering pattern (36a) tilted with respect to the Y-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the left of the fringe located at position 2. The incident light ray (48a) and the incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0176] An incident ray (48c) passes through the filtering pattern (36a) and other filtering patterns (34b), (34c) tilted with respect to the Y axis, immediately to the right of the fringe located at A2 and to the left of the fringe located at C3, at the maximum possible divergence angle relative to the normal of the filtering patterns that is permitted for a ray passing through the channel between fringes 2 and 3. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0177] The divergence angle of the incident light beam (48c) seen in Figure 7A is larger than the divergence angle of the incident light beam (48c) seen in Figure 5A because, at the point of incidence of the incident light beam, the filtering pattern (36a) tilted with respect to the Y-axis is closer to the filtering pattern (34c) in Figure 7A than the filtering pattern (34a) is from the filtering pattern (34c) in Figure 5A, and the shorter the distance, the greater the allowable maximum angle.

[0178] In the filtering device with the filtering pattern (47) tilted with respect to the Y-axis shown in Figure 7A, as the distance between the filtering pattern (36a) tilted with respect to the Y-axis and the filtering patterns (34b) and (34c) changes along the Y-axis, the change in shape affects the propagation path of the incident light rays entering the device at various points. To better illustrate this effect, a series of similar incident light rays are plotted at various points to identify the differences in the propagation paths and gaps.

[0179] The incident ray (48d) passes through the filtering pattern (36a) tilted with respect to the Y axis, passing just to the left of the fringe located at A3, and at an angle that allows it to pass at such a rate that it does not hit the fringe located at B3 at all. The incident ray (48d) hits the fringe located at C4 and is reflected. The reflected ray (49d) returns and is absorbed by the sealant layer behind the fringe located at A5.

[0180] The incident ray (48e) passes through the filtering pattern (36a) tilted with respect to the Y axis, passes just to the left of the fringe located at A6, and can pass at an angle that does not hit the fringe located at B6 at all. The incident ray (48e) has a smaller divergence angle than the incident ray (48d), hits the fringe located at C7 and is reflected. The reflected ray (49e) returns and is absorbed by the sealant layer behind the fringe located at A8.

[0181] Incident ray (48f) passes through the filtering pattern (36a) tilted with respect to the Y axis, passing just to the left of the fringe located at A9, and at an angle that allows it to pass through without hitting the fringe located at B9 at all. Incident ray (48f) has a smaller divergence angle than incident ray (48e), hits the fringe located at C10 and is reflected. Reflected ray (49f) returns and is absorbed by the sealant layer behind the fringe located at B10.

[0182] Incident ray (48g) can pass through filtering pattern (36a) tilted with respect to the Y-axis, pass just to the left of the fringe located at A12, and pass at an angle that does not hit the fringe located at B12 at all. Incident ray (48g) has a smaller divergence angle than incident ray (48f), does not hit the fringe located at C13, and exits the filtering device with filtering pattern (47) tilted with respect to the Y-axis.

[0183] Incident light ray (48h) passes through the filtering pattern (36a) tilted with respect to the Y-axis, passes just to the left of the fringe located at A14, and can pass at an angle that does not hit the fringe located at B14 at all. Incident light ray (48g) has a smaller divergence angle than incident light ray (48f), does not hit the fringe located at C15, and exits the filtering device with filtering pattern (47) tilted with respect to the Y-axis.

[0184] Note that the divergence angle, which is the angle of incidence required for incident ray (48f) to not hit the fringe at level B, is smaller than the angle of incidence of incident ray (48e). Similarly, the angle of incidence at which incident ray (48e) does not hit the fringe at level B is smaller than the angle of incidence of incident ray (48d). This is the result of the gradual increase in the distance between the fringes caused by the angled placement of the filtering pattern (36a) tilted with respect to the Y axis. As this continues, eventually incident ray (48g) can pass through the filtering device with filtering pattern (47) tilted with respect to the Y axis and exit. The next incident ray (48h) also has a slight gap to the fringe located at C15 and passes through the filtering device with filtering pattern (47) tilted with respect to the Y axis and exits.

[0185] As shown in Figures 7 and 7A, the embodiment of the filtering device with a filtering pattern (47) tilted with respect to the Y axis with one filtering pattern (36a) and two filtering patterns (34b), (34c) tilted with respect to the Y axis allows unwanted incident light rays with various divergence angles to potentially pass depending on the point of incidence along the Y axis. As a result, the laser source used must have better collimation than that required to operate using the apparatus shown in Figures 5 and 5A.

[0186] To improve the performance of the filtering device with the filtering pattern (47) tilted with respect to the Y-axis, an additional filtering pattern parallel to the filtering patterns (34b), (34c) can be used to ensure that all laser beams generated by the available laser sources that hit the filtering device with the filtering pattern (47) tilted with respect to the Y-axis at an undesired angle are stopped.

[0187] Figure 7B shows a cross-sectional view of an alternative embodiment of a filtering device having a filtering pattern (47) inclined with respect to the Y-axis shown in Figure 7 along the AA cross-sectional line. The filtering pattern (36a) and filtering patterns (34b), (34c) inclined with respect to the Y-axis are divided by a plane perpendicular to the glass layers (37b), (37c). The cross-section cuts through the modified glass layer (42a), but unlike the embodiment shown in Figure 7A, the modified mirror layer and mirror layer are not applied, instead there is only the modified sealant layer (44a) and the sealant layer (39b), (39c) that absorbs laser light.

[0188] Due to the angle at which the filtering pattern 36a is positioned, the filtering pattern 36a and the filtering patterns 34b, 34c are assembled at variable distances from each other, and the distance between the filtering pattern 36a and the filtering pattern 34b is variable along the Y axis. All elements are positioned in perfect alignment with each other when viewed from above, such that all fringes 41a, 41b, 41c, as well as the modified mirror layer 43a, mirror layer 38b, 38c, modified sealant layer 44a, and other structures of sealant layer 39b, 39c are all perfectly aligned.

[0189] To illustrate the geometry and operation of a filtering device having a filtering pattern (47) tilted with respect to the Y-axis, a series of incident light rays (48a)-(48h) are shown.

[0190] To facilitate identification of the individual fringes, a grid structure with letters and numbers was created. Thus, reference number A15 can be used to refer to fringe (41a). Similarly, fringe (41b) can be designated by reference number B13, and fringe (41c) by reference number C8. Using this grid structure, it is easy to notice that fringes A1, B1, and C1 are perfectly aligned, as well as any fringes with different letters but the same number.

[0191] When any set of fringes with different letters but the same number are aligned, a channel is created that allows incident light to pass through. Any incident light that strikes a fringe at any level will be reflected.

[0192] The incident light ray (48a) is perpendicular to the filtering pattern (36a) tilted with respect to the Y-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the right of the fringe located at position 1. Similarly, the incident light ray (48b) is perpendicular to the filtering pattern (36a) tilted with respect to the Y-axis and the other filtering patterns (34b) and (34c) and does not block any of the fringes, so it passes through the filtering patterns and passes just to the left of the fringe located at position 2. The incident light ray (48a) and the incident light ray (48b) pass through the ends of channels 1-2 between the fringes located at positions 1 and 2.

[0193] An incident ray (48c) passes through the filtering pattern (36a) and other filtering patterns (34b), (34c) tilted with respect to the Y axis, immediately to the right of the fringe located at A2 and to the left of the fringe located at C3, at the maximum possible divergence angle relative to the normal of the filtering patterns that is permitted for a ray passing through the channel between fringes 2 and 3. The divergence angle can be identified using a dashed line drawn perpendicular to the filtering patterns at the point where the incident ray (48c) passes through the fringe located at A2.

[0194] The divergence angle of the incident light beam (48c) seen in Figure 7B is larger than the divergence angle of the incident light beam (48c) seen in Figure 5A because, at the point of incidence of the incident light beam, the filtering pattern (36a) tilted with respect to the Y-axis is closer to the filtering pattern (34c) in Figure 7B than the filtering pattern (34a) is from the filtering pattern (34c) in Figure 5A, and the shorter the distance, the greater the allowable maximum angle.

[0195] In the filtering device with the filtering pattern (47) tilted with respect to the Y-axis shown in Figure 7B, as the distance between the filtering pattern (36a) tilted with respect to the Y-axis and the filtering patterns (34b) and (34c) changes along the Y-axis, the change in shape affects the propagation path of the incident light rays that enter the device at various points. To better illustrate this effect, a series of similar incident light rays are plotted at various points to identify the differences in the propagation paths and gaps.

[0196] An incident ray (48d) passes through the filtering pattern (36a) tilted with respect to the Y axis, passing just to the left of the fringe located at A3, and at an angle that allows it to pass without hitting the fringe located at B3 at all. The incident ray (48d) hits the fringe located at C4 and is absorbed.

[0197] Incident ray (48e) passes through filtering pattern (36a) tilted with respect to the Y axis, passing just to the left of the fringe located at A6, and at an angle that allows it to pass without hitting the fringe located at B6 at all. Incident ray (48e) has a smaller divergence angle than incident ray (48d), hits the fringe located at C7, and is absorbed.

[0198] Incident ray (48f) passes through filtering pattern (36a) tilted with respect to the Y axis, passing just to the left of the fringe located at A9 and at an angle that allows it to pass without hitting the fringe located at B9 at all. Incident ray (48f) has a smaller divergence angle than incident ray (48e), hits the fringe located at C10 and is absorbed.

[0199] Incident ray (48g) can pass through filtering pattern (36a) tilted with respect to the Y-axis, pass just to the left of the fringe located at A12, and pass at an angle that does not hit the fringe located at B12 at all. Incident ray (48g) has a smaller divergence angle than incident ray (48f), does not hit the fringe located at C13, and exits the filtering device with filtering pattern (47) tilted with respect to the Y-axis.

[0200] Incident light ray (48h) passes through the filtering pattern (36a) tilted with respect to the Y-axis, passes just to the left of the fringe located at A14, and can pass at an angle that does not hit the fringe located at B14 at all. Incident light ray (48g) has a smaller divergence angle than incident light ray (48f), does not hit the fringe located at C15, and exits the filtering device with filtering pattern (47) tilted with respect to the Y-axis.

[0201] Note that the divergence angle, which is the angle of incidence required for incident ray (48f) to not hit the fringe at level B, is smaller than the angle of incidence of incident ray (48e). Similarly, the angle of incidence at which incident ray (48e) does not hit the fringe at level B is smaller than the angle of incidence of incident ray (48d). This is the result of the gradual increase in the distance between the fringes caused by the angled placement of the filtering pattern (36a) tilted with respect to the Y axis. As this continues, eventually incident ray (48g) can pass through the filtering device with filtering pattern (47) tilted with respect to the Y axis and exit. The next incident ray (48h) also has a slight gap to the fringe located at C15 and passes through the filtering device with filtering pattern (47) tilted with respect to the Y axis and exits.

[0202] As shown in Figures 7 and 7B, an embodiment of the filtering device with a filtering pattern (47) tilted with respect to the Y axis, with one filtering pattern (36a) and two filtering patterns (34b), (34c) tilted with respect to the Y axis, allows unwanted incident light rays with various divergence angles to potentially pass, depending on the point of incidence along the Y axis. As a result, the laser source used must have better collimation than that required to operate using the apparatus shown in Figures 5 and 5A.

[0203] To improve the performance of the filtering device with the filtering pattern (47) tilted with respect to the Y-axis, an additional filtering pattern parallel to the filtering patterns (34b), (34c) can be used to ensure that all laser beams generated by the available laser sources that hit the filtering device with the filtering pattern (47) tilted with respect to the Y-axis at an undesired angle are stopped.

[0204] Figure 8 shows a first embodiment of an apparatus for laser cutting a graphene layer (32) applied on a substrate (30). A laser source (50) generates a laser beam (51a) which is redirected using a mirror (52) and passes through a lens (53). As the laser beam (51b) leaves the lens (53), it strikes a filtering device (45) which is composed of a number of arranged filtering patterns (34a), (34b), (34c) in the example of Figure 8, which are perfectly aligned with each other so that from the point of view of the laser beam (51b), the filtering patterns appear as a single filtering pattern.

[0205] The reason for multiple filtering patterns is that due to physical limitations of the optical system, the laser beam (51b) may not be perfectly collimated and focused, and therefore may have some divergence that creates a slowly diverging beam. The first filtering pattern (34a) reflects most of the unwanted portion of the laser beam (51b) and passes it through where the cut needs to be made, creating a corresponding set of beam fringes (54a), (54b).

[0206] As explained in the paragraph above, the beam fringes (54a), (54b) are already in the shape of the intended cut, but due to the divergence of the laser beam (51b), the beam fringes are still spreading. The second filtering pattern (34a) and the third filtering pattern (34c) are placed at a distance from the previous filtering pattern to generate an assembly that acts as a collimator. As the laser beam passes through the channel in one filtering pattern, the part that passes near the edge of the reflective surface that is not perfectly aligned strikes the reflective surface in the next filtering pattern and is removed, generating a beam with improved collimation and precision as the laser beam proceeds to the subsequent filtering patterns. Depending on the required collimation level, three or more filtering patterns can be used as needed. The last filtering pattern (34c) is placed as close as possible to the graphene layer (32) in order to generate as precise a laser cut (55) as possible in the graphene layer (32).

[0207] FIG. 9 shows laser incisions (55a), (55b) on a graphene layer (32) deposited on a substrate (30) produced by the apparatus shown in FIG.

[0208] Figure 10 shows the cut path (56) that is generated when the mirror (52a) moves to deflect the laser beam (51a) generated by the laser source (50). The lens (53) deflects the laser beam (51a) and modifies the angle at the point of incidence so that after leaving the lens (53), the laser beam (51a) strikes a filtering device (45) consisting of a number of filtering patterns (34a), (34b), (34c) in the example of Figure 10, at a right angle or as straight as possible, generating beam fringes (54a) that strike the graphene layer (32) previously applied on the substrate (30).

[0209] To better illustrate the cut path (56) that is created when the mirror (52) moves to deflect the laser beam (51a), FIG. 10 shows a superposition with the mirror (52b) in the same position as seen in the previous FIG. 8. In the superposition shown in FIG. 10, the generated laser beam (51b) strikes the first filtering pattern (34a) and the subsequent filtering patterns (34b), (34c) at right angles, and the generated beam fringes (54b) strike the graphene layer (32) to create the intended laser cut (55) at the beginning of the cut path (56). The beam fringes (54a) created by the deflected laser beam (51a) strike the graphene layer (32) at the end of the cut path (56).

[0210] FIG. 11 shows a cut path (56) on a graphene layer (32) applied to a substrate (30) produced by the apparatus shown in FIG.

[0211] Figure 12 shows a slightly different possibility, using a prism (57) instead of a mirror to deflect the laser beam (51) through a lens (53). As the laser beam (51) leaves the lens (53), it strikes a filtering device (45) consisting of several, in the example of Figure 12 three, arranged filtering patterns (34a), (34b), (34c) perfectly aligned with each other so that from the point of view of the laser beam (51), the filtering patterns appear as a single filtering pattern. The first filtering pattern (34a) reflects most of the unwanted part of the laser beam (51), generating beam fringes (54), which strike the graphene layer (32) previously applied on the substrate (30) and generate the intended laser cut (55).

[0212] Fig. 13 shows the apparatus for laser scoring a graphene layer (32) coated on a substrate (30) from different angles to show further details. A laser beam (51a) generated by a laser source (50) is redirected in a mirror (52), passes through a lens (53) and hits the filtering device (45). A reflected laser beam (59a) is generated when the laser beam (51b) hits the mirror layer (38a) of the filtering pattern (34a) and the mirror layers of the subsequent filtering patterns (34b), (34c).

[0213] Since the filtering pattern (34a) is positioned exactly perpendicular to the laser beam (51b), the reflected laser beam (59a) returns on the same path in reverse order, passing through the lens (53) and the mirror (52). To prevent the reflected laser beam (59a) from returning to the laser source (50) and potentially causing damage to the laser source (50), a partial mirror (58) is placed between the laser source (50) and the mirror (52) so that the laser beam (51a) coming from the laser source (50) passes through, but the reflected laser beam (59b) coming from the mirror (52) is reflected by 90 degrees so that it can be safely absorbed by the assimilation device (60).

[0214] 14 shows a slightly different arrangement for safely absorbing the reflected laser beam (59b) in the assimilation apparatus (60). The laser beam (51a) generated by the laser source (50) is redirected in a mirror (52), passes through a lens (53) and strikes a filtering device with a filtering pattern (46) tilted with respect to the X-axis.

[0215] The majority of the reflected laser beam (59a) is generated when the laser beam (51b) strikes the modified mirror layer (43a) of the filtering pattern (35a) tilted with respect to the X-axis. Although secondary reflections exist in the mirror layers (38b), (38c) of the subsequent filtering patterns (34b), (34c), these secondary reflections are caused by the divergence of the laser beam (51b) and therefore are not substantially intense and should not be considered a threat to the laser source (50).

[0216] The filtering pattern (35a), tilted with respect to the X-axis, has its normal positioned at a small angle to the laser beam (51b), so that the reflected laser beam (59a) returns along a path slightly different from the path taken by the laser beam (51b). The reflected laser beam (59a) passes through the lens (53) and the mirror (52), but strikes the mirror (52) at a different point and at a different angle. As a result, the reflected laser beam (59b) does not travel to the laser source (50), but travels directly to the assimilation device (60) and is absorbed.

[0217] The angle between the normal of the filtering pattern (35a) tilted with respect to the X-axis and the laser beam (51b) must be relatively small to avoid large variations in the distance between the two ends of the filtering pattern (35a) tilted with respect to the X-axis and the filtering pattern (34b), which may impair the collimation function of the filtering device having the filtering pattern (46) tilted with respect to the X-axis.

[0218] The unreflected portion of the laser beam (51b) strikes the graphene layer (32) and creates many beam fringes (54) that generate the intended laser cuts (55).

[0219] Figure 19 shows the end result of laser cutting into a graphene layer deposited on a substrate 30. Once cutting is complete, a processed graphene layer 62 is produced having a pair of terminals 63a and 63b. In the design shown in Figure 19, terminals 63a and 63b are completely isolated from one another and remain connected to a series of alternating fringes 64a, 64b, etc., such that terminal 63a is connected to fringe 64a but not to the next adjacent fringe 64b. Similarly, terminal 63b is connected to fringe 64b but not to fringe 64a. Terminals 63a and 63b are also connected to respective bottom contacts 33a and 33b below substrate 30 through through holes 31a, 31b such that terminal 63a is connected to bottom contact 33a but not to bottom contact 33b, and terminal 63b is connected to bottom contact 33b but not to bottom contact 33a. To facilitate visualization of bottom contacts 33a and 33b, two circular cutouts have been made at appropriate points in substrate 30.

[0220] FIG. 20 shows another end result of laser cutting of a graphene layer deposited on a substrate (30). Once cutting is completed using an appropriate set of filtering patterns, a processed graphene layer (62) is produced with a set of unconnected fringes (65a), (65b), etc. that are not connected to either of the terminals (63a) and (63b). In the example of FIG. 20, the terminals (63a) and (63b) are completely separated from each other and remain connected to a series of alternating fringes (64a), (64b), etc., such that one unconnected fringe (65a) is located between two consecutive fringes (64a), (64b) that are connected to terminals (63a) and (63b), respectively. Similarly, the unconnected fringe (65b) is located between the fringe (64b) connected to terminal (63b) and the next fringe connected to terminal (63a), etc., and so on.

[0221] 21 illustrates a device stack (66) that is produced when multiple processed graphene layers (62a), (62b), (62c), (62d), etc. are stacked to increase the total capacity of the device. For greater stability, the first processed graphene layer (62a) disposed in the device stack (66) is built on a base (67a) made of a thicker, more robust material than the material used in the substrates (30b), (30c), etc. used to support the other processed graphene layers (62b), (62c), (62d) included in the device stack (66).

[0222] The individual layers are simply stacked on top of each other, taking care to align all layers so that, for example, the bottom contact (33d) of the second layer is located directly above the terminal (63b) of the first layer. Similarly, the bottom contact (33f) of the third layer is located directly above the terminal (63d) of the second layer. The same is true for the opposite terminal (63g) and the terminals (63f) and (63h) of the other layers.

[0223] FIG. 22 shows a supercapacitor assembly (68) produced by placing a cover (69) over a base (67) containing one processed graphene layer (62) or one element stack, completely covering the structure in a protective environment. A pair of metal contacts (70a) and (70b) are placed in contact with terminals (63a) and (63b), respectively, providing robust electrical contacts for powering an external device. To facilitate visualization of the other components, the cover (69) is depicted as transparent. Operation - First embodiment

[0224] First, through holes (31) are made on both ends of the substrate (30), as seen in FIG. 1. Then, the graphene layer (32) is applied onto the substrate (30) so as to cover and flow through all the through holes (31). The application of the graphene layer (32) can be done in one or more steps, either by applying a single layer of the intended thickness, or by applying successive layers of appropriate thickness and drying before applying the next layer until the intended thickness is achieved. If necessary, a surface treatment, such as a surface plasma erosion, can be applied to the substrate (30) to ensure that the graphene layer (32) bonds well to the substrate (30).

[0225] As shown in Figure 2, a bottom contact (33) made from the same material used to make the graphene layer (32) is made on the underside of the graphene layer (32). The previously made through-holes (31) create a series of bridges filled with the same material as the graphene layer (32) and the bottom contact (33) so that the graphene layer (32) and the bottom contact (33) remain physically and electrically connected across the substrate (30).

[0226] FIG. 3 shows an isometric view of a graphene layer (32) coated on a substrate (30) showing the through holes (31) and bottom contacts (33), and FIG. 4 shows an embodiment of a filtering pattern (34) comprised of a glass layer (37) having a portion of the glass layer (37) coated with a mirror layer (38) along the underside of the glass layer (37) having a mirror layer (38) formed into a pattern.

[0227] The laser scoring operation may be performed using any one of the filtering devices (45), (46), and (47) shown in Figures 5-7B or other embodiments. The filtering pattern may be of any suitable design to develop desired properties of a supercapacitor or other product.

[0228] The basic cutting method is shown in Figure 8. A laser source (50) produces a laser beam (51a) that is redirected using mirrors (52) and passes through a lens (53). As the laser beam (51b) exits the lens (53), it strikes multiple, in the example of Figure 8 three, positioned filtering patterns (34a), (34b), (34c) that are perfectly aligned with each other such that from the perspective of the laser beam (51b), the filtering patterns appear as a single filtering pattern. By using multiple filtering patterns, a certain degree of divergence is eliminated that produces a slowly diverging light beam.

[0229] The first filtering pattern (34a) reflects most of the unwanted portion of the laser beam (51b) and passes through where the cut needs to be made, generating a corresponding number of beam fringes (54a), (54b). The second filtering pattern (34a) and the third filtering pattern (34c) are placed at a distance from the previous filtering patterns to generate an assembly that acts as a collimator. As the laser beam passes through the channel in one filtering pattern, the portion that passes near the edge of the reflective surface that is not perfectly aligned strikes the reflective surface in the next filtering pattern and is removed, generating a beam with improved collimation and precision as the laser beam progresses through the subsequent filtering patterns, and the last filtering pattern (34c) is placed as close to the graphene layer (32) as achievable to generate the laser cut (55) as accurately as possible in the graphene layer (32).

[0230] As shown in Figure 10, the mirror rotates as shown in a first position (52a) and a second position (52b) to redirect the laser beam (51b) along the Y-axis. The substrate (30) with the graphene layer (32) applied thereto and the filtering patterns (34a), (34b), (34c) move together in unison such that the laser beam (51a) can reach different points across the X-axis. As the laser beam (51a) moves and hits different points on the filtering patterns (34a), (34b), (34c), the beam fringes (54a), (54b) change accordingly while still retaining the exact pattern that needs to be generated at the laser cut (55) points in the graphene layer (32) underneath. To maximize the cutting efficiency, the laser beam (51a) is made orders of magnitude wider than the smallest dimension of the filtering patterns (34a), (34b), (34c), spreading the laser power over a larger area and generating multiple, potentially thousands of beam fringes (54a), (54b), each with a small fraction of the total energy contained in the laser beam (51a). These low-power beam fringes (54a), (54b) cut the graphene layer (32) more gently than a narrow, focused laser beam, removing smaller chunks of material per pass. However, because there are multiple, potentially thousands of beam fringes (54a), (54b), the combinatorial effect produces faster and more reliable results than a single, more powerful laser beam could possibly produce.

[0231] As shown in FIG. 10, after leaving the lens (53), the laser beam (51a) strikes the first filtering pattern (34a) and the subsequent filtering patterns (34b), (34c) at a right angle or as straight an angle as possible, and in the design of the filtering patterns (34a), (34b), and (34c) of the filtering device (45), a cutting path (56) is generated after the lens (53) deflects the laser beam (51a) and corrects the angle at the point of incidence so as to generate beam fringes (54a) that strike and cut into the graphene layer (32) previously applied on the substrate (30).

[0232] As shown in FIG. 12, the mirrors shown previously in FIGS. 8 and 10 can be replaced with prisms (57) which will operate in the same manner as described above for FIGS. 8 and 10 with similar results.

[0233] 13 shows the reflected laser beam (59a) that is generated when the laser beam (51b) hits the mirror layer (38a) of the filtering pattern (34a) and the mirror layers of the subsequent filtering patterns (34b) and (34c). Since the filtering pattern (34a) is positioned exactly perpendicular to the laser beam (51b), the reflected laser beam (59a) returns to the same path in the reverse order through the lens (53) and the mirror (52) to prevent damage to the laser source (50), and a partial mirror (58) is placed between the laser source (50) and the mirror (52) in such a way that the laser beam (51a) coming from the laser source (50) passes through, but the reflected laser beam (59b) coming from the mirror (52) is reflected by 90 degrees, so that it can be safely absorbed by the assimilation device (60).

[0234] The mirror (52) rotates to redirect the laser beam (51b) along the Y-axis, while the substrate (30) with the graphene layer (32) applied thereto and the filtering patterns (34a), (34b), (34c) move together in unison such that the laser beam (51b) can reach different points across the X-axis. As this process occurs, the reflected laser beam (59b) changes accordingly depending on the pattern at the particular point where it strikes the filtering patterns (34a), (34b), (34c). The reflected laser beam (59b) is reflected off the mirror (52), reflected again off the partial mirror (58), and continues to be safely absorbed by the assimilation device (60).

[0235] Figure 14 shows a slightly different arrangement for safely absorbing the reflected laser beam (59b) in the assimilation device (60). The filtering pattern (35a) tilted with respect to the X-axis has its normal positioned at a small angle to the laser beam (51b), so that the reflected laser beam (59a) returns on a path slightly different from the path taken by the laser beam (51b). The reflected laser beam (59a) passes through the lens (53) and the mirror (52), but hits the mirror (52) at a different point and at a different angle. As a result, the reflected laser beam (59b) does not go to the laser source (50), but goes directly to the assimilation device (60) and is absorbed.

[0236] The angle between the normal of the filtering pattern (35a) tilted with respect to the X-axis and the laser beam (51b) must be relatively small to avoid large variations in the distance between the two ends of the filtering pattern (35a) tilted with respect to the X-axis and the filtering pattern (34b), which may impair the collimation function of the filtering device having the filtering pattern (46) tilted with respect to the X-axis.

[0237] The mirror (52) rotates to redirect the laser beam (51b) along the Y-axis, while the substrate (30) with the coated graphene layer (32) and the filtering patterns (34a), (34b), (34c) move together in unison so that the laser beam (51b) can reach different points across the X-axis. As this process occurs, the reflected laser beam (59b) is reflected off the mirror (52) and continues to be safely absorbed by the assimilation device (60).

[0238] As the laser beam (51b) moves and strikes various points of the X-axis tilted filtering pattern (35a) and the filtering patterns (34b), (34c), the beam fringes (54) change accordingly while retaining the exact pattern that needs to be generated at the laser cut (55) points in the underlying graphene layer (32). To maximize the cutting efficiency, the laser beam (51b) is generated orders of magnitude wider than the smallest dimension of the X-axis tilted filtering pattern (35a) and the filtering patterns (34b), (34c), spreading the laser power over a larger area and generating multiple beam fringes (54), which can number in the thousands, each with a small fraction of the total energy contained in the laser beam (51b). These low-power beam fringes (54) can cut the graphene layer (32) more gently than a narrow focused laser beam and remove a smaller chunk of material per pass. However, because there are multiple beam fringes (54), which could number in the thousands, the combined effect produces faster and more reliable results than a single, more powerful laser beam could possibly produce.

[0239] Figure 19 shows the end result of laser cutting into a graphene layer that has been applied onto a substrate (30). Once cutting is complete, a processed graphene layer (62) is produced having a pair of terminals (63a) and (63b). In the design shown in Figure 19, terminals (63a) and (63b) are completely isolated from one another and remain connected to a series of alternating fringes (64a), (64b), etc., such that terminal (63a) is connected to fringe (64a) but not to the next adjacent fringe (64b). Similarly, terminal (63b) is connected to fringe (64b) but not to fringe (64a). Terminals 63a and 63b are also connected to respective bottom contacts 33a and 33b below substrate 30 through through holes 31a, 31b such that terminal 63a is connected to bottom contact 33a but not to bottom contact 33b, and terminal 63b is connected to bottom contact 33b but not to bottom contact 33a. To facilitate visualization of bottom contacts 33a and 33b, two circular cutouts have been made at appropriate points in substrate 30.

[0240] Any two adjacent fringes 64a and 64b implement an unit capacitor. Because alternating fringes are connected to separate terminals 63a and 63b, the entire arrangement functions as thousands of parallel connected capacitors. Bottom contacts 33a and 33b, located directly below and electrically connected to the respective terminals 63a and 63b, provide a simple method of stacking thousands of parallel connected capacitors in multiple layers.

[0241] FIG. 20 shows another end result of laser cutting of a graphene layer deposited on a substrate (30). Once cutting is completed using an appropriate set of filtering patterns, a processed graphene layer (62) is produced with a set of unconnected fringes (65a), (65b), etc. that are not connected to either of the terminals (63a) and (63b). In the example of FIG. 20, the terminals (63a) and (63b) are completely separated from each other and remain connected to a series of successive fringes (64a), (64b), etc., such that one unconnected fringe (65a) is always located between two alternating fringes (64a), (64b) connected to terminals (63a) and (63b), respectively. Similarly, the unconnected fringe (65b) is located between the fringe (64b) connected to terminal (63b) and the next fringe connected to terminal (63a), etc.

[0242] Two adjacent fringes 64a and 64b connected to terminals 63a and 63b, together with the intermediate unconnected fringe 65a, implement two unit capacitors arranged in series. There is one capacitor between fringe 64a and unconnected fringe 65a, and one capacitor between unconnected fringe 65a and fringe 64b. Because alternating fringes 64a and 64b are connected to separate terminals 63a and 63b, the entire arrangement functions as a capacitor pair of thousands of series connected capacitors and parallel connected capacitors. The bottom contacts 33a and 33b, located directly below and electrically connected to the respective terminals 63a and 63b, provide a simple way to stack multiple layers of thousands of parallel connected capacitors and series connected capacitor pairs.

[0243] 21 illustrates a device stack (66) that is produced when multiple processed graphene layers (62a), (62b), (62c), (62d), etc. are stacked to increase the total capacity of the device. For greater stability, the first processed graphene layer (62a) disposed in the device stack (66) is built on a base (67a) made of a thicker, more robust material than the material used in the substrates (30b), (30c), etc. used to support the other processed graphene layers (62b), (62c), (62d) included in the device stack (66).

[0244] The individual layers are simply stacked on top of each other, taking care to align all layers so that, for example, the bottom contact (33d) of the second layer is located directly above the terminal (63b) of the first layer. Similarly, the bottom contact (33f) of the third layer is located directly above the terminal (63d) of the second layer. The same is true for the opposite terminal (63g) and the terminals (63f) and (63h) of the other layers.

[0245] 22 shows a supercapacitor assembly (68) produced by placing a cover (69) over a base (67) containing one processed graphene layer (62) or one stack of elements to completely cover the structure in a protective environment. A pair of metal contacts (70a) and (70b) are placed in contact with the terminals (63a) and (63b), respectively, to provide robust electrical contacts for supplying power to an external device.

[0246] FIG. 15 shows an alternative embodiment of the invention that uses multiple laser beams, which offers the important advantage of enabling faster processing. Many laser beams can be used simultaneously, provided they are far enough apart to avoid interference and there is adequate time for heat dissipation. In the example of FIG. 15, only four laser beams are depicted to avoid clutter. Laser sources (50a), (50b), (50c), (50d) are positioned directly above the filtering patterns (34a), (34b), (34c), and a graphene layer (32) is applied onto the substrate (30). The unreflected portions of the laser beams (51a), (51b), (51c), (51d) strike the graphene layer (32) and create many beam fringes (54a), (54b), (54c), (54d), (54e), which generate the intended laser cuts (55a), (55b), (55c), (55d) as shown in FIG. 16.

[0247] The reason for multiple filtering patterns is that the laser beam may not be perfectly collimated and focused, and therefore may have some divergence that creates a slowly diverging beam. The first filtering pattern (34a) reflects most of the unwanted portion of the laser beam and passes it through where the cut needs to be made, creating a corresponding number of beam fringes.

[0248] As explained in the paragraph above, the beam fringes are already in the shape of the intended cut, but due to the divergence of the laser beam, they are still spreading. The second filtering pattern (34b) and the third filtering pattern (34c) are placed at a distance from the previous filtering pattern to generate an assembly that acts as a collimator. As the laser beam passes through the channel in one filtering pattern, the part that passes near the edge of the reflective surface that is not perfectly aligned hits the reflective surface in the next filtering pattern and is removed, generating a beam with improved collimation and precision as the laser beam proceeds to the subsequent filtering patterns. Depending on the required collimation level, three or more filtering patterns can be used as needed. The last filtering pattern (34c) is placed as close as possible to the graphene layer (32) in order to generate as precise a laser cut (55) as possible in the graphene layer (32).

[0249] Reflected laser beams 59a, 59b, 59c, 59d are generated when laser beams 51a, 51b, 51c, 51d strike the mirror layer 38a of filtering pattern 34a and the mirror layer of the subsequent filtering patterns 34b, 34c. When filtering pattern 34a is positioned perpendicular to laser beams 51a, 51b, 51c, 51d, reflected laser beams 59a, 59b, 59c, 59d return along the same path taken by laser beams 51a, 51b, 51c, 51d. To prevent the reflected laser beams (59a), (59b), (59c), (59d) from returning to the laser sources (50a), (50b), (50c), (50d) and damaging the laser sources (50a), (50b), (50c), (50d), a long partial mirror (61) is positioned at a 45 degree angle to the laser beams (51a), (51b), (51c), (51d) such that the laser beams (51a), (51b), (51c), (51d) coming from the laser sources (50a), (50b), (50c), (50d) are passed through, but the reflected laser beams (59a), (59b), (59c), (59d) are reflected 90 degrees in a direction where they can be safely absorbed.

[0250] FIG. 16 shows laser cuts (55a), (55b), (55c), and (55d) on a graphene layer (32) coated on a substrate (30) produced by the apparatus shown in FIG.

[0251] Figure 17 shows a slightly different arrangement for safe absorption of the reflected laser beam (59) in an assimilation device (60). A laser source (50) is placed directly above a filtering device with a filtering pattern (46) tilted with respect to the X-axis, and a graphene layer (32) is applied onto a substrate (30). The filtering device with a filtering pattern (46) tilted with respect to the X-axis consists of one filtering pattern (35a) and multiple filtering patterns, two in the example of Figure 17 (34b), (34c), tilted with respect to the X-axis.

[0252] The unreflected portion of the laser beam (51) in the filtering pattern (35a) tilted with respect to the X-axis impinges on the graphene layer (32) and creates many beam fringes (54) that generate the intended laser cuts (55).

[0253] The majority of the reflected laser beam (59) is generated when the laser beam (51) hits the modified mirror layer (43a) of a filtering pattern (35a) tilted with respect to the X-axis. The filtering pattern (35a) tilted with respect to the X-axis has its normal arranged at a small angle with respect to the laser beam (51), causing the reflected laser beam (59) to return on a path slightly different from the path taken by the laser beam (51). As a result, the reflected laser beam (59) does not travel to the laser source (50), but instead travels directly to the assimilation device (60) where it is safely absorbed.

[0254] Secondary reflections at the mirror layers of the subsequent filtering patterns (34b), (34c) are caused by the divergence of the laser beam (51) and therefore are not substantially powerful and are not a threat to the laser source (50).

[0255] The angle between the normal of the filtering pattern (35a) tilted with respect to the X-axis and the laser beam (51) must be relatively small to avoid large variations in the distance between the two ends of the filtering pattern (35a) tilted with respect to the X-axis and the filtering pattern (34b), which may impair the collimation function of the filtering device having the filtering pattern (46) tilted with respect to the X-axis.

[0256] Figure 18 shows a variation of the arrangement of Figure 17. In the example of Figure 18, a filtering device is used with a filtering pattern (47) tilted relative to the Y axis, where the Y-axis tilted filtering pattern (36a) is arranged at an angle to the laser beams (51a), (51b) relative to their width along the Y axis. The axis of the angle can be seen relative to the bottom tangent point (33).

[0257] Figure 18 also differs from figure 17 by the fact that two laser beams (51a), (51b) are used in parallel to reduce the manufacturing time. If necessary, in figure 18 three or more laser beams can be used and in figure 17 two or more laser beams can be used to further reduce the manufacturing time. For the sake of simplicity and to avoid clutter that makes it difficult to show all the details, the drawings in figure 17 are made with one laser beam and in figure 18 with two laser beams.

[0258] The arrangement of FIG. 18 offers the important advantage of using multiple laser beams, allowing for faster processing. Many laser beams can be used simultaneously, provided they are far enough apart to avoid interference and there is adequate time for heat dissipation. The laser sources (50a), (50b) are placed directly above a filtering device with a filtering pattern (47) tilted with respect to the Y axis, consisting of one filtering pattern (36a) tilted with respect to the Y axis and two in the example of filtering patterns (34b), (34c). The parts of the laser beams (51a), (51b) that are not reflected by the filtering pattern (36a) tilted with respect to the Y axis impinge on the graphene layer (32) deposited on the substrate (30), creating many beam fringes (54a), (54b) that generate the intended laser incisions (55a), (55b).

[0259] The majority of the reflected laser beams (59a), (59b) are generated when the laser beams (51a), (51b) strike the modified mirror layer (43a) of the filtering pattern (36a) tilted with respect to the Y-axis. Because the filtering pattern (36a) tilted with respect to the Y-axis has its normal oriented at a small angle to the laser beams (51a), (51b), the reflected laser beams (59a), (59b) return along a path that is slightly different from the path taken by the laser beams (51a), (51b). As a result, the reflected laser beams (59a), (59b) do not travel through the laser source (50a), (50b), but rather travel to a point where they are safely absorbed.

[0260] Although secondary reflections exist in the mirror layers of the subsequent filtering patterns (34b), (34c), these secondary reflections are caused by the divergence of the laser beams (51a), (51b) and therefore are not substantially strong and do not pose a threat to the laser sources (50a), (50b).

[0261] The advantage of the arrangement shown in Figure 18 is that it is simpler and requires fewer (cheaper) components than the arrangement shown in Figure 14. The disadvantage of the arrangement shown in Figure 18 is that the angle between the normal of the tilted filtering pattern (36a) with respect to the Y axis and the laser beams (51a), (51b) is small, which in turn forces the laser sources (50a), (50b) to be placed farther away from the tilted filtering pattern (36a) with respect to the Y axis, such that the angle between the laser beams (51a), (51b) and the reflected laser beams (59a), (59b) is small, which in turn forces the laser sources (50a), (50b) to be placed farther away from the tilted filtering pattern (36a) with respect to the Y axis, such that the reflected laser beams (59a), (59b) have a sufficient distance to prevent them from traveling to the laser sources (50a), (50b). Operation - Second embodiment

[0262] The preparation of the substrate (30) having through holes (31), the application of the graphene layer (32) on top of the substrate (30) and the creation of the bottom contact (33) made from the same material used to create the graphene layer (32), as well as the preparation and operation of the filtering pattern (34) are performed as described in the operation of the first embodiment of the invention.

[0263] In Figure 15, four laser beams are used simultaneously to cut the desired pattern into the graphene layer 32. Alternatively, more (or fewer) laser beams can be used, but to avoid confusion, the typical case of using four laser beams will be described.

[0264] Laser sources (50a), (50b), (50c), (50d) are positioned directly above the filtering patterns (34a), (34b), (34c) and the graphene layer (32) is deposited on the substrate (30). The unreflected portions of the laser beams (51a), (51b), (51c), (51d) strike the graphene layer (32) and create a number of beam fringes (54a), (54b), (54c), (54d), (54e) that generate the intended laser cuts (55a), (55b), (55c), (55d).

[0265] Reflected laser beams 59a, 59b, 59c, 59d are generated when laser beams 51a, 51b, 51c, 51d strike the mirror layer 38a of filtering pattern 34a and the mirror layer of the subsequent filtering pattern 34b, 34c. When filtering pattern 34a is positioned perpendicular to laser beams 51a, 51b, 51c, 51d, reflected laser beams 59a, 59b, 59c, 59d return along the same path taken by each respective laser beam 51a, 51b, 51c, 51d. The long partial mirror (61) allows the laser beams (51a), (51b), (51c), (51d) coming from the laser sources (50a), (50b), (50c), (50d) to pass through, but deflects the reflected laser beams (59a), (59b), (59c), (59d) by 90 degrees in a direction where they can be safely absorbed, preventing potential damage to the laser sources (50a), (50b), (50c), (50d).

[0266] The laser sources (50a), (50b), (50c), (50d) can be moved in the X and Y axes with respect to the filtering patterns (34a), (34b), and (34c) and the graphene layer (32), which is held in the same relative position with respect to the long partial mirror (61).

[0267] As the laser sources (50a), (50b), (50c), (50d) move and the laser beams (51a), (51b), (51c), (51d) strike different points of the filtering patterns (34a), (34b), (34c), the beam fringes (54a), (54b), (54c), (54d) change accordingly while retaining the precise pattern that needs to be generated at the laser cuts (55a), (55b), (55c), (55d) in the underlying graphene layer (32). To maximize the cutting efficiency, the laser beams (51a), (51b), (51c), (51d) are made orders of magnitude wider than the smallest dimension of the filtering patterns (34a), (34b), (34c), spreading the laser power over a larger area and generating multiple, potentially thousands of beam fringes (54a), (54b), (54c), (54d), each with a small fraction of the total energy contained in the laser beam. These low-power beam fringes cut the graphene layer more gently than a narrow, focused laser beam, removing smaller chunks of material per pass. However, because there are thousands of beam fringes, the combinatorial effect produces faster and more reliable results than a single, more powerful laser beam could possibly produce.

[0268] In the example of Figure 17, the X-axis tilted filtering pattern (35a) is disposed at an angle to the laser beam (51) relative to the X-axis along the length of the X-axis tilted filtering pattern (35a). The axis of the angle can be seen relative to the bottom tangent point (33).

[0269] In the arrangement of Fig. 17, the filtering pattern tilted with respect to the X-axis (35a) needs to be slightly modified. The filtering pattern tilted with respect to the X-axis (35a) must be constructed taking into account the angle between the normal of the filtering pattern tilted with respect to the X-axis (35a) and the laser beam (51). This can be easily achieved by changing the pattern of the filtering pattern tilted with respect to the X-axis (35a) so that, at an angle, when viewed from the perspective of the laser beam (51), it shows exactly the same pattern as the other filtering patterns (34b) and (34c) viewed straight on. The non-reflected parts of the laser beam (51) strike the graphene layer (32) and create many beam fringes (54) that generate the intended laser incision (55).

[0270] The laser source (50) is movable in the X and Y axes relative to the graphene layer (32) which is held in the same relative position to the filtering device having the filtering pattern (46) tilted with respect to the X axis.

[0271] As the laser source (50) moves and the laser beam (51) strikes various points of the X-axis tilted filtering pattern (35a) and filtering patterns (34b), (34c), the beam fringes (54) change accordingly while retaining the exact pattern that needs to be generated at the laser cut (55) points in the underlying graphene layer (32). To maximize the cutting efficiency, the laser beam (51) is generated orders of magnitude wider than the smallest dimension of the X-axis tilted filtering pattern (35a) and filtering patterns (34b), (34c), spreading the laser power over a larger area and generating multiple beam fringes (54), which can number in the thousands, each with a small fraction of the total energy contained in the laser beam. These low-power beam fringes can cut the graphene layer more gently than a narrow focused laser beam and remove a smaller chunk of material per pass. But because there are multiple beam fringes, which could number in the thousands, the combined effect produces faster and more reliable results than a single, more powerful laser beam could possibly produce.

[0272] The advantage of the arrangement shown in Figure 17 is that it is simpler and requires fewer (less expensive) components than the arrangement shown in Figure 14. The disadvantage of the arrangement shown in Figure 17 is that the angle between the normal of the tilted filtering pattern (35a) with respect to the X-axis and the laser beam (51) is small, which in turn forces the laser source (50) to be placed farther away from the tilted filtering pattern (35a) with respect to the X-axis, such that the angle between the laser beam (51) and the reflected laser beam (59) is small, which in turn has a sufficient distance to prevent the reflected laser beam (59) from traveling to the laser source (50).

[0273] In Figure 18, two laser beams are used simultaneously to cut the desired pattern into the graphene layer 32. Alternatively, more or fewer laser beams can be used, but to avoid confusion, the typical case of using two laser beams will be described.

[0274] The laser sources (50a), (50b) are positioned directly above a filtering device with a filtering pattern (47) tilted with respect to the Y-axis, and the graphene layer (32) is applied onto the substrate (30). The portion of the laser beam (51a), (51b) that is not reflected by the filtering pattern (36a) tilted with respect to the Y-axis strikes the graphene layer (32) and creates a number of beam fringes (54a), (54b) that generate the intended laser cuts (55a), (55b).

[0275] The majority of the reflected laser beams (59a), (59b) are generated when the laser beams (51a), (51b) strike the modified mirror layer (43a) of the filtering pattern (36a) tilted with respect to the Y-axis. Because the filtering pattern (36a) tilted with respect to the Y-axis has its normal oriented at a small angle to the laser beams (51a), (51b), the reflected laser beams (59a), (59b) return along a path that is slightly different from the path taken by the laser beams (51a), (51b). As a result, the reflected laser beams (59a), (59b) do not travel through the laser source (50a), (50b), but rather travel to a point where they are safely absorbed.

[0276] Although secondary reflections exist in the mirror layers of the subsequent filtering patterns (34b), (34c), these secondary reflections are caused by the divergence of the laser beams (51a), (51b) and therefore are not substantially strong and do not pose a threat to the laser sources (50a), (50b).

[0277] The laser sources (50a), (50b) are movable in the X and Y axes relative to the graphene layer (32) which is held in the same relative position to the filtering device having the filtering pattern (47) tilted with respect to the Y axis.

[0278] As the laser sources 50a, 50b move and the laser beams 51a, 51b strike various points of the Y-axis tilted filtering pattern 36a and filtering patterns 34b, 34c, the beam fringes 54a, 54b change accordingly while retaining the exact pattern they need to be generated at the laser cut points 55a, 55b in the underlying graphene layer 32. To maximize cutting efficiency, the laser beams 51a, 51b are generated orders of magnitude wider than the smallest dimension of the X-axis tilted filtering pattern 35a and filtering patterns 34b, 34c to spread the laser power over a larger area and generate multiple beam fringes 54a, 54b, which may number in the thousands, each with a small fraction of the total energy contained in the laser beam. These low-power beam fringes cut into the graphene layers more gently than a narrow, focused laser beam, removing smaller chunks of material with each pass. But because there are multiple beam fringes, potentially thousands of them, the combined effect produces faster and more reliable results than a single, more powerful laser beam could possibly produce.

[0279] A new method for manufacturing parts with laser cutting techniques using filtered patterns is presented. This method is capable of producing very fine parts, i.e. completely covering the part with a pattern of detailed structures with details having dimensions 3-5 orders of magnitude smaller than the overall dimensions of the part, and these parts can be manufactured within a reasonable time that is thousands of times faster than can be achieved using conventional laser cutting methods.

[0280] The proposed filtering pattern serves multiple purposes: a) it serves as a pattern of the intended details that have to be cut; b) it serves as a collimator, avoiding or greatly reducing problems caused by divergence of the laser beam, such as damage to unintended areas; c) it serves as a beam splitter, dynamically splitting a wide laser beam into thousands of very narrow child laser beams that are better suited for cutting very delicate structures; d) it serves as a means to enable simplification of the optics required to focus the laser beam and absorb inaccuracies in the positioning control mechanisms; e) it provides flexibility to the manufacturing line, allowing multiple filtering patterns using different mask designs to be easily created and these designs to be cheaply and quickly swapped on the manufacturing line to produce a variety of devices serving different customer requirements.

[0281] The proposed invention is very suitable for producing high performance bilayer graphene supercapacitors where a very large number of very fine structures such as fringes need to be built with very small spacing from each other. Another essential requirement is a very high aspect ratio between the thickness of the individual fringes to accommodate as many fringes as possible in the width or length of the graphene slab, and the height of the individual fringes such that the fringes extend from the bottom to the top of the graphene slab.

[0282] The proposed invention enables the construction of high-performance, energy-dense graphene supercapacitors thousands of times faster than other methods and in a time frame compatible with mass production. As a result, the resulting devices can be affordable to produce and commercially competitive with other energy storage devices.

[0283] Although the present invention has been disclosed by this specification, including the accompanying figures and examples, various equivalents, modifications, and improvements will be apparent to those skilled in the art. Such equivalents, modifications, and improvements are also intended to be included in the scope of the following claims. [Explanation of symbols]

[0284]

Table 2-1

Table 2-2

Claims

1. 1. A filtering device for collimation of a laser beam, comprising: a plurality of filtering patterns, each filtering pattern having a pattern formed by a plurality of gaps, the plurality of gaps being designed to allow the laser beam to pass through the sealant layer and create cuts on the substrate; wherein said multiple filtering patterns are perfectly aligned and positioned at variable distances from one another such that, when viewed from the perspective of an incident laser beam, all filtering patterns appear as a single filtering pattern and corresponding gaps in said filtering patterns appear as a single gap; wherein the filtering device is configured to reflect or absorb portions of a laser beam entering the plurality of filtering patterns at a divergence angle that is not perpendicular to the plurality of filtering patterns and at an angle that is greater than an angle permitted by ends of corresponding gaps of a first and a last filtering pattern and less than a maximum divergence angle of a laser source.

1. A filtering device for collimation of a laser beam comprising:

2. 2. The filtering device for collimation of a laser beam of claim 1, comprising a plurality of filtering patterns, each filtering pattern having a pattern formed by a plurality of gaps, the plurality of gaps being designed to allow the laser beam to pass through a mirror layer and the sealant layer and generate cuts on the substrate.

3. Suitable for the production of high-density supercapacitors with high energy capacity; wherein the filtering pattern is formed by the plurality of gaps creating a first terminal and a second terminal; wherein the first terminal and the second terminal each include a plurality of alternating fringes, each fringe being connected to a terminal in an alternating pattern; 2. The filtering device for collimation of a laser beam as described in claim 1, wherein the first terminal pattern and the second terminal pattern are physically separated from each other by a continuous gap between the first terminal pattern and the second terminal pattern, the gap being configured to allow the laser beam to pass through and create a cut on the substrate.

4. Suitable for the production of high-density supercapacitors with high energy capacity; wherein the filtering pattern formed by the plurality of gaps creates a first terminal and a second terminal and an isolated fringe; wherein said first terminal and said second terminal each include a plurality of alternating fringes, each fringe being connected to a terminal in an alternating pattern, and a plurality of said isolated fringes being not connected to any terminal; 2. The filtering device for collimation of a laser beam as described in claim 1, wherein one or more isolated fringes are disposed between each fringe connected to the first terminal pattern and each fringe connected to the second terminal pattern such that a continuous gap prevents physical contact between the isolated fringes or the first terminal pattern and the second terminal pattern, and the gap is configured to allow the laser beam to pass through and create a cut on the substrate.

5. 2. The filtering device for collimation of a laser beam as described in claim 1, suitable for fabricating high density supercapacitors having high energy capacity, wherein the multiple filtering patterns are configured to be aligned under a laser beam.

6. forming a plurality of filtering patterns having gaps in the intended pattern to be created; aligning a plurality of filtering patterns with a laser source; aligning a substrate to the plurality of filtering patterns; emitting a laser beam from said laser source; reflecting or absorbing a portion of the laser beam that encounters a reflecting or absorbing structure in any of the plurality of filtering patterns; cutting the substrate with the portion of the laser beam that enters the gap to create the patterns included in the plurality of filtering patterns, resulting in a structure having a first terminal and a second terminal of a supercapacitor. A method for manufacturing a supercapacitor using a filtering device and a laser, comprising:

7. The filtering device and method for manufacturing a supercapacitor using a laser according to claim 6 , wherein the substrate comprises a graphene layer.

8. The filtering device and method for manufacturing a supercapacitor using a laser according to claim 6 , wherein the substrate has a graphite layer.

9. The filtering device and method for manufacturing a supercapacitor using a laser according to claim 6 , wherein the substrate has a through-hole and a graphene layer, the graphene layer extending through the through-hole.

10. The method of claim 6 comprising tilting one of the filtering patterns at an angle relative to an axis.

11. A method for manufacturing a supercapacitor using the filtering device and lasers of claim 6 having multiple laser sources.

12. 7. The method of claim 6, further comprising a mirror off-axis of the laser beam, the mirror configured to deflect a reflected laser beam.

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