Electron beam and droplet-based extreme ultraviolet light source devices

Abstract

A light source device according to one embodiment of the present invention is a light source device that outputs extreme ultraviolet light based on an electron beam and metal droplets, and includes a chamber, a cathode electrode, and a plurality of emitters including a carbon-based material and spaced apart from the cathode electrode, and includes an electron beam emitter that generates an electron beam inside the chamber, an anode electrode that is located inside the chamber and spaced apart from the electron beam emitter, and a droplet generator that sprays metal droplets into a space between the electron beam emitter and the anode electrode inside the chamber, and the droplets are ionized by the electron beam toward the anode electrode in the chamber to generate plasma, and extreme ultraviolet light is generated from the plasma.

Description

[Technical field]

[0001] The present invention relates to an electron beam and droplet-based extreme ultraviolet light source device, and more particularly to a device that uses an electron beam and droplets to output an extreme ultraviolet light source. [Background technology]

[0002] Extreme ultraviolet (EUV) is an electromagnetic wave with a wavelength band of about 10 to 100 nm, which is between the X-ray and deep ultraviolet (DUV) regions. Recently, much research has been focused on developing compact extreme ultraviolet light source devices for applications that use the extreme ultraviolet region.

[0003] For example, extreme ultraviolet lithography equipment is used in nanometer-sized fine pattern processes for semiconductor manufacturing. However, currently, extreme ultraviolet lithography equipment is based on high-power lasers and is only sold as a product of a specific overseas company. In particular, such extreme ultraviolet lithography equipment is very expensive because it is based on a laser, has a complex internal structure, occupies a large volume, and has a problem that a lot of debris is generated by the very high-power laser due to its output characteristics, making it difficult to maintain and repair. Summary of the Invention [Problem to be solved by the invention]

[0004] In order to solve the above-mentioned problems of the conventional technology, the present invention aims to provide an extreme ultraviolet light source technology that has a simple internal structure, a compact size, and can reduce manufacturing costs.

[0005] Another object of the present invention is to provide an extreme ultraviolet light source technology that uses an electron beam with a lower output than a laser, thereby reducing debris and being advantageous for maintenance and repair.

[0006] It is yet another object of the present invention to provide an extreme ultraviolet light source technology that utilizes multiple electron beams more efficiently to improve light output.

[0007] However, the problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from the following description. [Means for solving the problem]

[0008] In order to solve the above problems, a light source device according to one embodiment of the present invention is a light source device that outputs extreme ultraviolet light based on an electron beam and metal droplets, and includes a chamber, a cathode electrode, and a plurality of emitters including a carbon-based material and spaced apart from each other on the cathode electrode, and includes an electron beam emitter that generates an electron beam inside the chamber, an anode electrode that is located inside the chamber and spaced apart from the electron beam emitter, and a droplet generator that sprays metal droplets into a space between the electron beam emitter and the anode electrode inside the chamber, and the droplets are ionized by the electron beam toward the anode electrode in the chamber to generate plasma, and extreme ultraviolet light is generated from the plasma.

[0009] A plurality of electron beam emitters are provided, and the electron beams generated by the plurality of electron beam emitters proceed at different angles or directions toward at least one anode electrode and are output one by one or multiple are output simultaneously.

[0010] Each electron beam emitter is disposed on one side within the chamber, and the anode electrode is disposed on the other side within the chamber where the outlet of the extreme ultraviolet light source is located.

[0011] The anode electrode is disposed on the other side thereof, surrounding the outlet, and may have an opening corresponding to the outlet.

[0012] One side and the other side of the chamber may have arch shapes opposing each other, and the anode electrode may have a shape corresponding to the arch shape of the other side.

[0013] The light source device according to one embodiment of the present invention may further include a reflective layer disposed around each electron beam emitting portion on one side of the chamber and also disposed in the space between each electron beam emitting portion to reflect extreme ultraviolet light.

[0014] One side and the other side of the chamber may have arch shapes facing each other, and the reflective layer may have a shape corresponding to the arch shape of one side.

[0015] The anode electrode can play the role of an intermediate focus (IF) for a plurality of extreme ultraviolet light sources generated by the respective electron beams and passing through the aperture.

[0016] The plurality of emitters may include pointed emitter tips, and the carbon-based material may include carbon nanotubes.

[0017] The electron beam emitter may further include a gate electrode spaced apart from the emitter.

[0018] A portion of the gate electrode facing the plurality of emitters may include a mesh structure made of a conductive material.

[0019] The electron beam emitting portion may further include at least one focusing electrode spaced apart from the gate electrode and having a negative voltage applied thereto to focus the electron beam.

[0020] The focusing electrode includes a first focusing electrode and a second focusing electrode spaced apart on the first focusing electrode, the first and second focusing electrodes each having an opening facing each other to allow the electron beam to pass therethrough, and the opening of the second focusing electrode is smaller than the opening of the first focusing electrode. Effect of the Invention

[0021] The present invention configured as described above is based on an electron beam and generates an extreme ultraviolet light source using an anode electrode realized separately from the electron beam emission section, so it has the advantages of a simple internal structure, a compact size, and reduced manufacturing costs.

[0022] In addition, the present invention has the advantage that it is possible to use a lower-power electron beam compared to a laser, which reduces adverse effects on the anode electrode and reduces debris, making it easier to maintain and repair. It also has the effect of being able to increase the amount of extreme ultraviolet light by using multiple electron beams.

[0023] Furthermore, the present invention has the advantage that the reflective layer structure, which is arch-shaped on one side of the chamber, and the anode electrode structure, which is arch-shaped on the other side of the chamber, simultaneously achieve a mutually complementary function of reflecting and focusing the extreme ultraviolet light source, thereby improving the light output.

[0024] The effects that can be obtained from the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from the following description. [Brief description of the drawings]

[0025] [Figure 1] 1 shows a configuration diagram of an extreme ultraviolet light source device 10 according to an embodiment of the present invention. [Diagram 2] 1 shows a configuration diagram of an extreme ultraviolet light source device 10 according to an embodiment of the present invention. [Diagram 3] 1 shows a configuration diagram of an extreme ultraviolet light source device 10 according to an embodiment of the present invention. [Figure 4] 2 shows a detailed configuration of the electron beam emission section 200. [Diagram 5] 5(a) and 5(b) show a perspective view and a cross-sectional view of an embodiment of an electron beam emitter 200. In FIG. [Figure 6]FIG. 4 shows a cross-sectional view of another example of the electron beam emitting portion 200 in which focusing electrodes 251 and 252 are added. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] The above objects, means and effects of the present invention will become more apparent through the following detailed description taken in conjunction with the accompanying drawings, so that those skilled in the art to which the present invention pertains can easily implement the technical ideas of the present invention. Furthermore, in describing the present invention, if it is determined that a detailed description of known techniques related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0027] Unless otherwise defined, all terms used in this specification can be used in a manner commonly understood by those having ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless otherwise clearly defined.

[0028] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0029] Figures 1 to 3 show configuration diagrams of an extreme ultraviolet light source device 10 according to an embodiment of the present invention. However, Figure 1 shows a case where a plurality of electron beam emitting units 200 simultaneously emit electron beams, while Figures 2 and 3 show a case where a plurality of electron beam emitting units 200 emit electron beams in a direction different from that shown in Figure 1. In particular, Figures 2 and 3 each show a case where a plurality of electron beam emitting units 200 sequentially emit electron beams one by one.

[0030] 1, an extreme ultraviolet light source apparatus 10 according to an embodiment of the present invention includes a chamber 100, an electron beam emitter 200 located inside the chamber 100, an anode electrode 300, and a droplet generator 400. For example, the extreme ultraviolet light source apparatus 10 may be used as a lithography apparatus in a fine pattern process for semiconductor manufacturing, but is not limited thereto.

[0031] The chamber 100 maintains plasma generated by ionization of metal droplets by the incidence of an electron beam. A region in the internal space of the chamber 100 where the plasma is maintained is referred to as a "plasma region" for convenience. The chamber 100 may include an outlet 110 from which a light source of extreme ultraviolet (EUV) generated in the plasma region is output. The interior of the chamber 100 may be in a vacuum state.

[0032] Fig. 4 shows a detailed configuration of the electron beam emitter 200. Fig. 5(a) and Fig. 5(b) show a perspective view and a cross-sectional view of one embodiment of the electron beam emitter 200, and Fig. 6 shows a cross-sectional view of another example of the electron beam emitter 200 in which focusing electrodes 251 and 252 are added to Fig. 4.

[0033] The electron beam emitting unit 200 emits an electron beam (e - In this case, the electron beam emitting unit 200 is not laser-based, but is based on a carbon-based emitter 230 that emits electrons by an electric field.

[0034] The electron beam emitting unit 200 is located inside the chamber 100 and irradiates electron beams toward an anode electrode 300 installed at a distance from the electron beam emitting unit 200 inside the chamber 100. Referring to Figures 4 to 6, the electron beam emitting unit 200 includes a cathode electrode 210, a plurality of emitters 230 located on the cathode electrode 210, and a gate electrode 240 located on the plurality of emitters 230 at a distance from the plurality of emitters 230.

[0035] The cathode electrode 210 and the anode electrode 300 include conductive materials and are commonly used negative and positive electrodes. For example, the cathode electrode 210 and the anode electrode 300 can include, but are not limited to, metals such as Al, Au, Ni, Ti, and Cr, transparent conductive oxides (TCOs) such as ITO (indium tin oxide), IZO (indium zinc oxide), AZO (aluminum zinc oxide), and IZTO (indium zinc tin oxide), conductive polymers, or graphene.

[0036] In the case of the conventional technology, it is common for a cathode electrode, an emitter, and an anode electrode to be provided together in an electron beam emitting unit, which can increase the volume of the electron beam emitting unit. In contrast, in the present invention, the anode electrode 300 is not provided in the electron beam emitting unit 200, but is provided as a separate component separated from the electron beam emitting unit 200 inside the chamber 100. As a result, the present invention has the advantage of being able to reduce the overall volume even when multiple electron beam emitting units 200 are provided.

[0037] In addition, since the present invention allows multiple electron beam emitting units 200 to emit electron beams using a common anode electrode 300 separately provided within the chamber 100, it has the advantages of a simpler internal structure, a more compact size, and reduced manufacturing costs than when a cathode electrode, an emitter, and an anode electrode are all provided within the electron beam emitting unit.

[0038] The plurality of emitters 230 are configured to emit electrons supplied from the cathode electrode 210 toward the anode electrode 300. The emitters 230 may be configured with a pointed emitter tip or a flat emitter layer. In this case, the emitter tip may be formed in various shapes such as a cone shape, a triangle shape, etc., in addition to a needle shape. For example, the emitters 230 are arranged on the cathode electrode 210 at regular intervals in both the horizontal and vertical directions.

[0039] The emitter 230 may include a carbon-based material, such as, but not limited to, a carbon nanotube (CNT), a carbon nanowire, a semiconductor nanowire, a zinc oxide nanowire, a carbon nanofiber, a conductive nanorod, graphite, or nanographene.

[0040] However, when the emitter 230 is realized by carbon nanotubes, it is possible to obtain highly efficient field emission characteristics specific to carbon nanotubes. For example, the emitter 230 of carbon nanotubes can be formed by a method such as, but not limited to, laser vaporization, arc discharge, thermal-CVD, plasma-CVD, and hot filament chemical vapor deposition (HF-CVD).

[0041] Meanwhile, the emitter 230 is provided on the field emission substrate 220. At this time, the field emission substrate 220 may be a normal wafer provided to have an emitter in a field emission device. That is, the field emission substrate 220 is provided on the cathode electrode 210 to mount the emitter 230.

[0042] The gate electrode 240 is configured to adjust the flow of electrons emitted from the emitter 230 according to an input voltage. A portion of the gate electrode 240 facing the plurality of emitters 230, i.e., a portion facing the plurality of emitters 230, may include a mesh structure 241 made of a conductive material (e.g., metal, etc.). For example, the mesh structure 241 may be configured in such a manner that thin metal wires are woven into a net shape at a distance from each other, or a metal plate having a plurality of openings formed therein. The gate electrode 240 can diffuse the electrons emitted from the emitter 230 while passing an electron beam through the spaces between the metal wires of the mesh structure 241 or the plurality of openings.

[0043] The gate electrode 240 includes a conductive material, and may include, but is not limited to, a metal such as Al, Au, Ni, Ti, or Cr, a transparent conductive oxide (TCO) such as ITO (indium tin oxide), IZO (indium zinc oxide), AZO (aluminum zinc oxide), or IZTO (indium zinc tin oxide), a conductive polymer, or graphene.

[0044] An insulating layer (or insulating spacer) (not shown) may be located between the cathode electrode 210 and the gate electrode 240 around the plurality of emitters 230. At this time, the thickness of the insulating layer is made larger than the height of each of the plurality of emitters 230 so that the gate electrode 240 does not come into contact with the plurality of emitters 230. The gate electrode 240 can maintain an insulated state from the cathode electrode 210 and the plurality of emitters 230 by such an insulating layer.

[0045] A low voltage (negative voltage) is applied to the cathode electrode 210 or it is grounded, and a high voltage (positive voltage) of 5 kV or more is applied to the anode electrode 300. In addition, a pulse voltage is applied to the gate electrode 240. That is, an electric field is formed around the emitters 230 due to the voltage difference between the cathode electrode 210 and the gate electrode 240, and electron beams are emitted from the emitters 230 by this electric field, and the emitted electron beams are attracted to the high voltage of the anode electrode 300 and accelerated.

[0046] At this time, the pulse voltage of the gate electrode 240 may have a high frequency or a low pulse width, for example, a high frequency characteristic of 100 kHz or more. Such a pulse voltage enables high-speed switching of the electron beam, leading to an effect of reducing the driving power.

[0047] As shown in Fig. 5, the electron beam emitter 200 may be realized without the focusing electrodes 251, 252, or may be realized to include at least one or more focusing electrodes 251, 252 spaced apart on the gate electrode 240 as shown in Fig. 6. For example, a first focusing electrode 251 spaced apart on the gate electrode 240 and a second focusing electrode 252 spaced apart on the first focusing electrode 251 are provided.

[0048] The electron beam emitting unit 200 may include a support 242 fixed to a periphery of a mesh structure 241 corresponding to the plurality of emitters 230 to support the mesh structure 241. In addition, a first insulating layer 261 may be located between the cathode electrode 210 around the plurality of emitters 230 and the support 242.

[0049] The second insulating layer 262 may be positioned between the gate electrode 240 and the first focusing electrode 251 to insulate the gate electrode 240 from the first focusing electrode 251, and the third insulating layer 263 may be positioned between the first focusing electrode 251 and the second focusing electrode 252 to insulate the first focusing electrode 251 from the second focusing electrode 252. Of course, a fourth insulating layer (not shown) may be positioned on the second focusing electrode 252 to insulate an upper portion of the second focusing electrode 252.

[0050] The second insulating layer 262, the first focusing electrode 251, the third insulating layer 263, the second focusing electrode 252, and the fourth insulating layer (not shown) each have an opening for passing the electron beam. In this case, the openings of the second insulating layer 262 and the third insulating layer 263 may be formed to have the same size.

[0051] The aperture 271 of the first focusing electrode 251 may have a diameter smaller than the overall diameter of the mesh structure 241 of the gate electrode 240, and the aperture 272 of the second focusing electrode 252 may have a diameter smaller than the diameter of the aperture 271 of the first focusing electrode 251. Of course, an additional focusing electrode (not shown) spaced apart from the second focusing electrode 252 may be provided, in which case the aperture of the additional focusing electrode may have a diameter smaller than the diameter of the aperture 272 of the second focusing electrode 252. That is, the apertures of smaller sizes are provided in the order of the first focusing electrode 251 and the second focusing electrode 252 (i.e., in the upward direction).

[0052] A negative (-) voltage is applied to the first and second focusing electrodes 251, 252. As a result, the electron beam that has passed through the mesh structure 241 of the gate electrode 240 passes through the opening 271 of the first focusing electrode 251 and the opening 272 of the second focusing electrode 252 in sequence, and is focused by the repulsive force applied by the first and second focusing electrodes 251, 252.

[0053] This structure allows the electron beam emitting unit 200 to have a simplified internal structure, a compact size, and reduced manufacturing costs. These advantages are further enhanced by the anode electrode 300 being provided separately inside the chamber 100, unlike the prior art.

[0054] In other words, the electron beam emitter 200 equipped with the first and second focusing electrodes 251, 252 can focus the electron beam and reduce the size of the electron beam reaching the anode electrode 300, thereby reducing the generation of debris and extending the service life of the anode electrode 300.

[0055] The droplet generating device 400 is a device for injecting metal droplets (D) into the chamber 100. In particular, the droplet generating device 400 injects the metal droplets (D) into the space between the electron beam emitting unit 200 and the anode electrode 300 inside the chamber 100. Thus, the electron beam emitted from the electron beam emitting unit 200 and accelerating toward the anode electrode 300 is incident (irradiated) on the injected metal droplets (D) along its path, vaporizing the metal droplets. The metal droplets vaporized by the electron beam are ionized to generate plasma, and extreme ultraviolet rays (EUV) are generated in the plasma region surrounding the metal droplets. That is, the plasma generated from the metal droplets (D) by the electron beam functions as a light source for generating extreme ultraviolet rays (EUV). The extreme ultraviolet light source (EUV) generated in this way is output to the outside of the chamber 100 through the outlet 110 of the chamber 100.

[0056] That is, the metal droplets (D) may include a metal emitting material that generates plasma when the electron beam is incident on the metal emitting material. For example, the metal emitting material may include one or more metals selected from the group consisting of tin (Sn), lithium (Li), indium (In), antimony (Sb), tellurium (Te), terbium (Tb), gadolinium (Gd) and aluminum (Al). For example, the droplet generating device 400 may be configured to drop a metal droplet (D) such as tin having a preset volume over a preset time period.

[0057] 1 to 3, a plurality of electron beam emitting units 200 are provided. At this time, each electron beam generated from the plurality of electron beam emitting units 200 may proceed at different angles or directions toward at least one anode electrode 300. Also, each electron beam may be output one by one or a plurality of electron beams may be output simultaneously.

[0058] That is, the plurality of electron beam emitters 200 can generate electron beams one by one in sequence or generate a plurality of electron beams simultaneously by pulse driving of gate voltages applied to the gate electrodes 240. At this time, it is possible to control the plurality of electron beam emitters 200 to generate electron beams one by one in sequence or generate a plurality of electron beams simultaneously through a control unit (not shown). As a result, the electron beams generated by the plurality of electron beam emitters 200 can be incident one by one on the region where the metal droplets (D) are present, or a plurality of electron beams can be incident simultaneously.

[0059] For example, referring to FIGS. 1 to 3, each electron beam emitter 200 is disposed on one side of a chamber 100, and an anode electrode 300 is disposed on the other side of the chamber 100, i.e., on the side where an outlet 110 of the chamber 100 is located.

[0060] In this case, the anode electrode 300 may be disposed around the outlet 110 on the other side of the chamber 100, with an opening corresponding to the outlet 110. That is, the anode electrode 300 is disposed around the outlet 110 on the other side of the chamber 100, with the opening corresponding to the outlet 110.

[0061] In particular, one side and the other side of the chamber 100 are formed in an arch shape facing each other. In this case, the anode electrode 300 is disposed in an arch shape corresponding to the arch shape of the other side. With this structure, the anode electrode 300 can play a role of intermediate focus (IF) for a plurality of EUV rays generated by each electron beam and traveling toward the other side of the chamber 100 to pass through its opening.

[0062] That is, a plurality of EUV rays generated by the electron beams of the plurality of electron beam emitting units 200 pass through the openings of the anode electrode 300 and are collected by the electromagnetic repulsive force of the anode electrode 300. Depending on the driving pulse voltage applied to the gate electrode of the corresponding electron beam emitting unit 200, each of these electron beams is emitted one by one as shown in Figures 2 and 3, or a plurality of electron beams are emitted simultaneously as shown in Figure 1.

[0063] Also, a reflective layer 500 that reflects EUV may be additionally provided in the chamber 100. For example, EUV generated by the incidence of an electron beam is not output directly to the outlet 110 of the chamber 100, but is reflected at least once by the reflective layer 500 and then output to the outlet 110 of the chamber 100. By applying such a reflection function to an arch shape, each EUV generated by a plurality of electron beams can be focused in a direction toward the outlet 110 of the chamber 100, thereby increasing the intensity of the EUV transmitted through the outlet 110.

[0064] In order to ensure smooth operation of the reflection function, the reflective layer 500 is disposed on one side of the chamber 100, and is disposed around the electron beam emitting units 200 disposed on that side. Of course, the reflective layer 400 can also be disposed in the spaces between the electron beam emitting units 200 spaced apart from each other.

[0065] Moreover, one side and the other side inside the chamber 100 are formed in an arch shape facing each other, and the reflective layer 500 is also formed in a shape corresponding to the arch shape of the one side. In this case, the above-mentioned reflection function of the reflective layer 500 for EUV and the light collecting function for EVU by the arch-shaped anode electrode 300 on the other side inside the chamber 100 are simultaneously realized in a mutually complementary manner, which has the advantage of improving the light output.

[0066] In this case, the reflective layer 500 includes a reflective surface recessed toward the outlet 110 of the chamber 100. For example, the reflective layer 500 may be made of alternating multi-layers of molybdenum (Mo) and silicon (Si), but is not limited thereto.

[0067] Although the detailed description of the present invention has been given with reference to specific embodiments, it is of course possible to make various modifications without departing from the scope of the present invention. Therefore, the scope of the present invention is not limited to the described embodiments, but should be determined by the claims below and equivalents to these claims. [Industrial Applicability]

[0068] The present invention configured as described above is based on an electron beam and generates an extreme ultraviolet light source using an anode electrode realized separately from the electron beam emitting unit, so that it has an advantage of being simple in internal structure, compact in size, and reducing manufacturing costs. In addition, the present invention has an advantage of being able to use an electron beam with a lower output than a laser, reducing adverse effects on the anode electrode and reducing debris, etc., which is advantageous for maintenance and repair, and has an effect of being able to improve the output of extreme ultraviolet light by using multiple electron beams. Furthermore, the present invention has an advantage of being able to simultaneously realize a reflection function and a light collection function for the extreme ultraviolet light source in a mutually complementary manner by the structure of the reflective layer in an arch shape on one side of the chamber and the structure of the anode electrode in an arch shape on the other side of the chamber, so that the output of the light amount can be improved. [Explanation of symbols]

[0069] 10: Extreme ultraviolet light source device 100: Chamber 110: Exit 200: Electron beam emission section 210: Cathode electrode 220: Field emission substrate 230: Emitter 240: Gate electrode 241: Mesh structure 242:Support 251, 252: Focusing electrode 261, 262, 263: Insulating layer 300: Anode electrode 400: Droplet generator 500: Reflective layer

Claims

1. A light source device that outputs an extreme ultraviolet light source based on an electron beam and metal droplets, A chamber; an electron beam emitting unit for generating an electron beam within the chamber, the electron beam emitting unit including a cathode electrode and a plurality of emitters including a carbon-based material and spaced apart from each other on the cathode electrode; an anode electrode located within the chamber and spaced apart from the electron beam emitting portion; a droplet generating device configured to inject metal droplets into a space between the electron beam emitting unit and the anode electrode in the chamber, The droplets are ionized by the electron beam directed toward the anode electrode in the chamber to generate a plasma, and extreme ultraviolet light is generated from the plasma; The electron beam emitting unit is provided in a plurality of units, The electron beams generated from the plurality of electron beam emitting parts travel toward at least one anode electrode at different angles or directions, and are output one by one or a plurality of electron beams are output simultaneously.

2. Each of the electron beam emitters is disposed on one side of the chamber, The light source device according to claim 1 , wherein the anode electrode is disposed on the other side of the chamber where the outlet of the extreme ultraviolet light source is located.

3. The light source device according to claim 2 , wherein the anode electrode is disposed around the outlet on the other side and has an opening corresponding to the outlet.

4. One side and the other side of the chamber have arch shapes facing each other, The light source device according to claim 2 , wherein the anode electrode has a shape corresponding to the arch shape on the other side.

5. 4. The light source device according to claim 2, further comprising a reflective layer disposed around each of the electron beam emitting portions on one side of the chamber and also disposed in a space between each of the electron beam emitting portions, for reflecting the extreme ultraviolet light.

6. One side and the other side of the chamber have arch shapes facing each other, The light source device according to claim 5 , wherein the reflective layer has a shape corresponding to the arch shape of the one side.

7. 4. The light source device according to claim 3, wherein the anode electrode plays a role of an intermediate focus (IF) for a plurality of extreme ultraviolet light sources generated by the respective electron beams and passing through the aperture.

8. The light source device of claim 1 , wherein the plurality of emitters include pointed emitter tips, and the carbon-based material includes carbon nanotubes.

9. The light source device according to claim 1 , wherein the electron beam emitting portion further comprises a gate electrode spaced apart from the emitter.

10. The light source device of claim 9 , wherein a portion of the gate electrode facing the plurality of emitters includes a mesh structure made of a conductive material.

11. 10. The light source device according to claim 9, wherein the electron beam emitting portion further includes at least one focusing electrode spaced apart from the gate electrode and having a negative voltage applied thereto to focus the electron beam.

12. The focusing electrode includes a first focusing electrode and a second focusing electrode spaced apart from the first focusing electrode, 12. The light source device according to claim 11, wherein the first and second focusing electrodes each have an opening facing each other so that an electron beam passes therethrough, and the opening of the second focusing electrode is smaller than the opening of the first focusing electrode.

Images