Liquid crystal display device

Abstract

To provide a display device with improved viewing angle characteristics, and to provide a display device with suppressed mixture of colors between adjacent pixels.SOLUTION: A display device includes a first coloring layer and a second coloring layer provided apart, and a structure body located between the coloring layers. A structure body has a portion located closer, in height, to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The law can be cited as one example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to devices in general. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are all types of semiconductor devices. In addition, it is also used in imaging devices, electro-optical devices, power generation devices (thin-film solar cells, organic thin-film solar cells, etc.) etc.), and electronic devices may include semiconductor devices. [Background technology]

[0004] Organic EL (Electro Luminescence) elements and liquid crystal elements are used. In addition, there are also other display devices using light-emitting diodes (LEDs). Light-emitting devices equipped with light-emitting elements such as emitting diodes, electrophoretic devices, etc. Electronic paper that displays information can also be given as an example of a display device.

[0005] The basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light is emitted from the light-emitting organic compound. A display device using such an organic EL element is thin, lightweight, and has high contrast. It is possible to realize a reliable and low power consumption display device.

[0006] Patent Document 1 discloses a flexible light-emitting device using an organic EL element. . [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0008] One of the indicators of a display device's performance is the viewing angle characteristic. If the viewing angle characteristic is poor, When the display surface of the display device is viewed obliquely, a decrease in luminance and a change in chromaticity are visually recognized. Therefore, in applications where a wide viewing angle is required, there is a need to improve the viewing angle characteristics of display devices. do.

[0009] In addition, there is a demand for higher resolution display devices. Compared to large devices such as home television sets, for example, portable In relatively small portable information terminal devices such as telephones, smartphones, and tablet terminals, the resolution In order to improve the quality, it is necessary to improve the resolution.

[0010] An object of one embodiment of the present invention is to provide a display device with improved viewing angle characteristics. Another object of the present invention is to provide a display device in which color mixing between adjacent pixels is suppressed. Another object of the present invention is to provide a display device with high resolution. Another object of the present invention is to provide a display device that is easy to manufacture. Another object of the present invention is to provide a display device with reduced power consumption. Another object is to provide a highly reliable display device.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. Problems other than those mentioned above are not necessarily solved. It is possible to extract such information from descriptions in the fine print, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a display device having a first colored layer, a second colored layer, and a structural body. The first colored layer and the second colored layer are provided at a distance from each other. and the second colored layer, and the lower surface of the first colored layer or the lower surface of the second colored layer The display screen has a portion located on the side closer to the display surface than the height of the display screen.

[0013] In the above, it is preferable that the thickness of the first colored layer is different from that of the second colored layer. It is nice.

[0014] The liquid crystal display device further includes a first electrode overlapping the first colored layer, and a first electrode and a first colored layer are disposed between the first electrode and the first colored layer. In this case, a light emitting element is preferably provided between the first electrode and the second electrode. The distance between the second electrode and the first colored layer is 0 μm or more and 20 μm or less. It is preferred that the area be less than m.

[0015] The structure further includes an insulating layer that covers an end portion of the first electrode, and the structure is formed on the insulating layer. In this case, it is preferable that the second electrode has a portion covering the upper surface of the structure. I wish.

[0016] The layer containing the light-emitting substance has a portion located between the structure and the second electrode. In addition, it is preferable that the angle between the side surface and the bottom surface of the structure is 25 degrees in the cross section. It is preferable that the angle be 155 degrees or more.

[0017] The layer containing the light-emitting substance is located between the structure and the second electrode, and the first It is preferable that the thickness of the portion overlapping the electrode be thinner than that of the portion overlapping the electrode.

[0018] The display device according to one embodiment of the present invention further includes a third electrode overlapping with the first colored layer. It is also possible to have a configuration in which liquid crystal is provided between the electrode and the first colored layer.

[0019] It is also preferable that a fourth electrode having a slit is provided between the third electrode and the liquid crystal. In this case, the distance between the fourth electrode and the first colored layer is in the range of 1 μm to 20 μm. It is preferred that the ion exchange membrane has a region.

[0020] Alternatively, a fifth electrode is provided between the third electrode and the first colored layer, and the liquid crystal is It is preferable that the second color layer is located between the third electrode and the first color layer. It is preferable that the distance between the adjacent regions is in the range of 1 μm to 20 μm. Effect of the Invention

[0021] According to one embodiment of the present invention, a display device having improved viewing angle characteristics can be provided. It is possible to provide a display device in which color mixing between pixels is suppressed, or to provide a display device with high resolution. Alternatively, a display device having a small thickness can be provided. Alternatively, a display device that is easy to manufacture can be provided. Alternatively, a display device with reduced power consumption can be provided. It is possible to provide a display device.

[0022] Note that one embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description, drawings, claims, etc. [Brief description of the drawings]

[0023] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Diagram 2] 1 shows a configuration example of a display device according to an embodiment. [Diagram 3] 1 shows a configuration example of a display device according to an embodiment. [Figure 4] 1 shows a configuration example of a display device according to an embodiment. [Diagram 5] 1 shows a configuration example of a display device according to an embodiment. [Figure 6] 1 shows a configuration example of a display device according to an embodiment. [Figure 7] 1 shows a configuration example of a display device according to an embodiment. [Figure 8] 1 shows a configuration example of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 3 shows a configuration example of an input device according to an embodiment. [Figure 12] 3 shows a configuration example of an input device according to an embodiment. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a display device according to an embodiment. [Figure 15] 1 shows a configuration example of a display device according to an embodiment. [Figure 16] 1 shows a configuration example of a display device according to an embodiment. [Figure 17] 1 shows a configuration example of a display device according to an embodiment. [Figure 18] 1 shows a configuration example of a display device according to an embodiment. [Figure 19] 5A to 5C are diagrams illustrating an example of a method for driving an input device according to an embodiment. [Figure 20] 3 shows an example of a transistor configuration according to the embodiment. [Figure 21] 3 shows an example of a transistor configuration according to the embodiment. [Figure 22] 3 shows an example of a transistor configuration according to the embodiment. [Figure 23] 1A to 1C are diagrams illustrating a display module according to an embodiment. [Figure 24] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 25] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 26] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 27] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 28] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 29] 1 is a cross-sectional observation image according to an embodiment. [Diagram 30] FIG. 4 is a diagram for explaining the measurement results of the XRD spectrum of a sample. [Diagram 31] TEM image of a sample and a diagram explaining an electron beam diffraction pattern. [Diagram 32] FIG. 1 is a diagram illustrating EDX mapping of a sample. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0026] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0027] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0028] (Embodiment 1) In this embodiment, a structure example of a display device according to one embodiment of the present invention will be described.

[0029] A display device according to one embodiment of the present invention has a plurality of pixels. Each pixel has a display element and The display element has a coloring layer that colors the light emitted from the display element. The electrode and the colored layer can be provided facing each other. Thus, the colored layers are spaced apart.

[0030] In addition, the liquid crystal display device has a structure located between the two colored layers between adjacent pixels. can be placed, for example, between two pixels each corresponding to a different color.

[0031] The display device has a configuration in which a display element, a color layer, and a structure are sandwiched between a pair of substrates. For example, one substrate may be provided with electrodes of a display element, and the other substrate may be provided with The colored layer or the like may be provided, and these may be bonded together with an adhesive layer or the like. Here, the structures may be formed on either substrate side.

[0032] The structure functions as a spacer to prevent the pair of substrates from approaching each other more than necessary. The structure may have a function of suppressing color mixing between adjacent pixels. For example, when EL elements are used as display elements, it is possible to suppress leakage current between adjacent EL elements. The structure may have a function of suppressing color mixing between adjacent pixels by controlling the light-transmitting property of the pixel.

[0033] In addition, a part of the structure is on the upper side of the colored layer on the display element side (lower side), i.e., on the display surface In other words, it is preferable that the colored layer is located on the side of the colored layer. It is preferable that the structure is disposed so as to fit between the colored layer and the It is not necessary for the structure to be in contact with the substrate, and there may be a space or an adhesive layer between them. stomach.

[0034] By adopting such a configuration, the distance between the pair of substrates can be made extremely small. The distance between the display element and the colored layer, more specifically, at least the distance between a pair of electrodes of the display element This allows the distance between the color layer and the other side to be as close as possible. In addition, the light emitted from the display element in an oblique direction can be Since it can be extracted efficiently, power consumption can be reduced. A display device can be realized.

[0035] The display elements are LEDs and OLEDs (Organic Light Emitting Diodes). g Diode), or QLED (Quantum-dot Light Emitt Light-emitting elements such as LEDs and optical elements such as liquid crystal elements are By using an element in which the brightness of the light emitted by the element or the light emitted through the element can be controlled by the This can be done.

[0036] In addition, MEMS (Micro Electro Mechanical Systems) are used as display elements. Optical devices such as optics, electron emitters, and other optical devices are used. As display elements using MEMS, there are shutter-type MEMS display elements, Examples include MEMS display elements that use optical interference. Other optical elements include microcapsules and electrophotographic devices. The electrophoretic method, electrowetting method, electronic liquid powder method, etc. are applied. The element can be used.

[0037] A more specific configuration example will be described below with reference to the drawings.

[0038] [Configuration example 1] FIG. 1(A) is a perspective schematic diagram of a display device 10 according to one embodiment of the present invention. The substrate 21 and the substrate 31 are bonded together. In FIG. 1A, the substrate 31 is indicated by a dashed line. It is stated explicitly in.

[0039] The display device 10 includes a display unit 32, a circuit 34, wiring 35, etc. The substrate 21 includes, for example, The circuit 34, the wiring 35, the conductive layer 23 included in the display portion 32 and functioning as a pixel electrode, and the like are FIG. 1A shows an example in which an IC 43 and an FPC 42 are mounted on a substrate 21. This shows that.

[0040] The circuit 34 can be, for example, a circuit that functions as a scanning line driver circuit.

[0041] The wiring 35 has a function of supplying signals and power to the display unit 32 and the circuit 34. Power is input to the wiring 35 from the outside via the FPC 42 or from the IC 43 .

[0042] In FIG. 1A, the substrate 2 is formed by a COG (Chip On Glass) method or the like. The IC 43 is, for example, a scanning line driving circuit or Alternatively, an IC having a function as a signal line driver circuit or the like can be applied. In some cases, a circuit that functions as a scanning line driver circuit and a signal line driver circuit is provided. A circuit that functions as a signal line driver circuit is provided externally, and drives the display device 10 via the FPC 42. In cases where a signal for operating the device is input, the IC 43 may not be provided. The IC43 is mounted on the FPC42 by COF (Chip On Film) method or the like. This is also fine.

[0043] FIG. 1A shows an enlarged view of a part of the display unit 32. The display unit 32 has a plurality of displays. The conductive layer 23 of the display element is arranged in a matrix. The structure 11 is disposed between two adjacent conductive layers 23. Here, the structure 11 is made up of two conductive layers 23 of two pixels corresponding to different colors. It is preferable that the structure 11 is disposed between two pixels corresponding to the same color. The conductive layer 23 may be disposed between the conductive layer 23 having the

[0044] [Cross-section example 1] [Cross-sectional configuration example 1-1] FIG. 1B shows an example of a cross section corresponding to the cutting line A1-A2 in FIG. In FIG. 1B, a cross section of a region including two adjacent pixels (subpixels) is shown. Illustrated is an example in which a light-emitting element 40 having a top emission structure is used as a display element. Therefore, the substrate 31 side is the display surface side.

[0045] The display device 10 has a structure in which a substrate 21 and a substrate 31 are bonded together with an adhesive layer 39. It can be said that the light emitting element 40 is sealed by the adhesive layer 39.

[0046] On the substrate 21, a transistor 70, a light emitting element 40, a structure 11, etc. are provided. Further, insulating layers 73, 81, 82, etc. are provided on the substrate 21. The surface of the substrate 31 facing the substrate 21 is provided with a colored layer 51a, a colored layer 51b, and a light-shielding layer 52. etc. are provided.

[0047] The colored layer 51a and the colored layer 51b are provided at a distance from each other. The insulating layer 51 is provided between the color layer 51a and the colored layer 51b. The optical layer 52 and the colored layer 51a are preferably arranged so as to partially overlap each other. The same applies to the light-shielding layer 52 and the colored layer 51b.

[0048] The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer the insulating layer 73 serving as a source or a drain; the conductive layer 74a serving as a source or a drain; The second conductive layer 74b functions as the other of the source and drain.

[0049] An insulating layer 81 is provided to cover the transistor 70. A conductive layer 2 is formed on the insulating layer 81. The conductive layer 23 and the conductive layer 74b are connected to each other through an opening provided in the insulating layer 81. A part of the conductive layer 23 functions as a pixel electrode.

[0050] An insulating layer 82 is provided to cover the end of the conductive layer 23. The insulating layer 82 has a tapered shape. It is preferable that

[0051] The structure 11 is provided on the insulating layer 82. The structure 11 is adjacent to the insulating layer 82 in a plan view. The structure 11 is located between two adjacent light emitting elements 40 in a plan view. The structure 1 also has a portion located between the colored layers (the colored layer 51a and the colored layer 51b). 1 is preferably disposed so as to overlap a part of the light shielding layer 52 in a plan view.

[0052] An EL layer 24 and a conductive layer 25 are provided on the conductive layer 23 to form a light emitting element 40. A part of the conductive layer 25 functions as a common electrode of the light-emitting element 40. The light-emitting element 40 has A potential difference is generated between the conductive layer 23 and the conductive layer 25, and a current is passed through the EL layer 24 to emit light. do.

[0053] FIG. 1B shows an example in which an EL layer 24 and a conductive layer 25 are formed across a plurality of pixels. In addition to the exposed portion of the conductive layer 23, the EL layer 24 includes the insulating layer 82 and the structure. The conductive layer 25 is provided to cover the EL layer 24. .

[0054] In FIG. 1B, the structure 11 is disposed on the light emitting element 40 side of the colored layer 51a and the colored layer 51b. As a result, the colored layer 51a and the colored layer 5 The structure 11 can be arranged so as to fit between the first and second electrodes 1b. The colored layer 51a, the colored layer 51b, or the light-shielding layer 52 and the structure 11 (or the structure 11 covering The surface of the conductive layer 25 formed by the conductive layer 25 shown in FIG. ), an adhesive layer 39 may be provided between them.

[0055] By adopting such a configuration, the distance between the substrate 21 and the substrate 31 can be made extremely small. When the light from the light emitting element 40 is emitted through the opening of the light blocking layer 52, The closer the distance between 52 and the light emitting element 40, the wider the angle at which light can be emitted. Therefore, a display device with improved viewing angle characteristics can be realized.

[0056] In addition, the distance between the light emitting element 40 and the colored layer 51a can be made extremely short. Therefore, most of the light emitted by the light emitting element 40 toward the display surface is incident on the colored layer 51a. At this time, the light emitting element 40 transmits light to the colored layer of the adjacent pixel (for example, the colored layer 51b). When light is emitted obliquely toward the object, the light is first detected by the colored layer 51a. Since light of a color other than the above color is absorbed, it is not emitted to the outside through the colored layer 51b. This significantly reduces color mixing between adjacent pixels, and reduces the chromaticity when the display surface is viewed from an oblique angle. Changes can be suppressed.

[0057] For comparison, FIG. 2(A) shows a case where colored layers are overlapped between two adjacent pixels. In FIG. 2(A), the color layer 51a, In addition to the colored layer 51b, a part of the colored layer 51c is also shown. In A), the structure 11 is not provided and the distance between the substrate 31 and the substrate 21 is reduced. It shows.

[0058] In the configuration shown in FIGS. 2(A) and (B), a portion where two colored layers overlap is provided between adjacent pixels. However, by doing so, it is possible to suppress color mixing between adjacent pixels. The distance 1 is limited by the thickness of the overlapping part of the two colored layers, and the structure in which the colored layers do not overlap On the other hand, it is difficult to make the distance between the substrates sufficiently small compared to the conventional structure shown in FIG. In this configuration, the colored layers are spaced apart, and the structure 11 is disposed so as to fit between them. In order to suppress color mixing, the distance between the substrates can be made extremely small. Therefore, compared to the configurations illustrated in FIGS. 2(A) and (B), the configuration illustrated in FIG. 1(B) has a diagonal This effectively reduces the change in luminance when viewed from the opposite direction.

[0059] The structure 11 is a spacer for preventing the substrate 21 and the substrate 31 from approaching each other more than necessary. Therefore, the surface of the structure 11 or the structure 11 may have a function as a catalyst. The surface of the covering layer (such as the conductive layer 25) is in contact with the structure provided on the substrate 31, such as the light-shielding layer 52. It is okay to do so.

[0060] In addition, the structure 11 may have a function of absorbing at least a part of visible light. As a result, the amount of light emitted obliquely toward the colored layer of the adjacent pixel through the structure 11 is This allows the color mixing between adjacent pixels to be more effectively suppressed. For the light-shielding layer 1, the same material as that of the colored layer 51a or the colored layer 51b and the light-shielding layer 52 may be used.

[0061] In this embodiment, the display device 10 is an active device having a transistor 70 and the like as an active element. The following describes a passive matrix type display device, which does not have active elements. In this case, the transistor 70 is not provided, and for example, For example, the elements located between the conductive layer 23 and the substrate 21 may be omitted.

[0062] FIG. 3(A) shows an enlarged view of the area surrounded by the dashed line in FIG. 1(B).

[0063] As shown in FIG. 3(A), the height of the highest (thickest) part of the structure 11 is defined as height h1. The height of the lowest part of the lower surface of the colored layer 51a is defined as height h2. The height of the highest part of the conductive layer 25 is defined as height h3. The height of the portion is defined as height h4. The height h4 can be rephrased as the height of the surface on which the colored layer 51a is formed. The height of the upper surface of the conductive layer 23 is set to height h5. The height of the upper surface of the conductive layer 25 at a certain portion is defined as height h6. Here, the height of a certain portion is expressed as For example, it can be expressed as the distance from the surface of the substrate 21.

[0064] Here, as shown in FIG. 3A, the height h1 of the structures 11 is the height of the lower surface of the colored layer 51a. The structure 11 is formed so that the height is higher than the height h2. Similarly, the conductive layer 25 is formed so that the height h3 of the upper surface of the layer 25 is higher than the height h2. Here, a part of the upper surface of the conductive layer 25 and a part of the lower surface of the light-shielding layer 52 may be in contact with each other.

[0065] Between the upper surface of the conductive layer 25 and the lower surface of the colored layer 51a in the direction perpendicular to the surface of the substrate 21 Let the distance be d1. That is, the distance d1 is equal to the height h2 minus the height h6. The smaller the distance d1, the more the color mixing between adjacent pixels can be reduced. d1 is, for example, 0 μm or more and 20 μm or less, preferably 0 μm or more and 10 μm or less, and more preferably When the distance d1 is 0 μm, the conductive layer 25 This means that the colored layer 51a is in contact with the colored layer 51b.

[0066] In addition, the upper surface of the conductive layer 25 and the area on which the colored layer 51a is formed in the direction perpendicular to the surface of the substrate 21 are The distance between the faces is distance d2. In other words, distance d2 is the value obtained by subtracting height h6 from height h4. and is equal to the sum of the distance d1 and the thickness of the colored layer 51a. For example, it is possible to suppress a decrease in luminance when the display surface is viewed from an oblique direction. The thickness of the film is, for example, 100 nm or more and 5 μm or less, preferably 200 nm or more and 4 μm or less, more preferably 200 nm or more and 4 μm or less. More preferably, it is 500 nm or more and 3 μm or less.

[0067] Here, if we say that the distance between A and B is greater than or equal to x and less than or equal to y, then within the observed range, A It is sufficient that the distance between A and B falls within the range of x or more and y or less.

[0068] Between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a in the direction perpendicular to the surface of the substrate 21 The distance is d3. That is, the distance d3 is equal to the height h2 minus the height h5. It is also equal to the sum of the distance d1 and the thickness of each of the EL layer 24 and the conductive layer 25. When an optical adjustment layer is provided to realize a cavity structure, the thickness of the optical adjustment layer is included in the thickness of the EL layer 24. The smaller the distance d3, the less color mixing occurs between adjacent pixels. The thickness of the EL layer 24 can be adjusted according to the configuration and the method of forming the light emitting element 40. It is sufficient to have an optimum thickness, but for example, the thickness can be set to 20 nm or more and 1 μm or less. The thickness of the conductive layer 25 may be optimized depending on the material and the required resistance value. However, the thickness can be, for example, 0.3 nm or more and 1 μm or less.

[0069] The distance d3 between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a is, for example, 20 nm or more and 22 μm or less. m or less, preferably 20 nm or more and 20 μm or less, and more preferably 20 nm or more and 10 μm or less. The thickness can be set to 20 nm or less and more preferably 5 μm or less.

[0070] In addition, the upper surface of the conductive layer 23 and the area on which the colored layer 51a is formed in the direction perpendicular to the surface of the substrate 21 are The distance between the faces is distance d4. In other words, distance d4 is the value obtained by subtracting height h5 from height h4. and is equal to the sum of the distance d3 and the thickness of the colored layer 51a. For example, it is possible to suppress a decrease in luminance when the display surface is viewed from an oblique direction.

[0071] Next, the shape of the structure 11 will be described. As shown in FIG. The taper angle of the structure 11 is defined as the taper angle θ. The taper angle is the angle between the bottom surface (the surface that contacts the surface to be formed) and the side surface. The taper angle is greater than 90 degrees and less than 180 degrees. When it is greater than 90 degrees it is sometimes called a reverse taper.

[0072] The taper angle θ of the structure 11 is 25 degrees or more and 155 degrees or less, preferably 30 degrees or more and 150 degrees or less. It is more preferable to set the angle to 35 degrees or more and 145 degrees or less.

[0073] Here, as shown in FIG. 1(B) and FIG. 3(A), the EL layer 24 is formed across a plurality of pixels. In this case, if the EL layer 24 has a highly conductive layer, the adjacent pixel may be connected via the highly conductive layer. In some cases, a current may flow to the elemental light-emitting element 40. Alternatively, the EL layer 24 may have a donor property. The same is true for layers containing both conductive and acceptor materials. If the light emitting element 40 of the adjacent pixel does not emit light, the color reproducibility will be reduced. This phenomenon can also be called crosstalk.

[0074] By setting the taper angle θ of the structure 11 in the above-mentioned range, the E The L layer 24 may have a thin portion. The portion covering the side surface is formed thinner than the portion covering the upper surface of the structure 11 and the portion on the conductive layer 23. In particular, when the structure 11 has an inverse tapered shape, the EL layer 24 can be divided. By providing such a structure 11, the EL layer 24 can have high electrical conductivity. Even if the layer has a layer containing both donor and acceptor materials, Since the current flowing to adjacent pixels through the layer can be reduced, crosstalk can be suppressed. It is possible.

[0075] 3B, 3C, and 3D show a structure 11 and an EL element provided to cover the structure 11. An example cross section of layer 24 and conductive layer 25 is shown.

[0076] The structure 11 shown in FIG. 3B has a forward tapered structure, and the end of the structure 11 of the EL layer 24 This shows how the covered area is thinning.

[0077] The structure 11 shown in FIG. 3C has an inverse tapered shape, and the end of the structure 11 of the EL layer 24 is This shows how the covered area is thinning.

[0078] In FIG. 3D, the end of the structure 11 has a continuous curvature, and the structure 11 of the EL layer 24 As shown in FIG. 3(D), the portion covering the edge is thinned. When the end of the structure 11 has a continuous curvature, the side surface of the structure 11 is the closest to the end of the structure 11. The larger angle with respect to the bottom surface can be regarded as the taper angle θ of the structure 11.

[0079] Depending on the materials used for the insulating layer 82 and the structure 11, the In addition, it may be difficult to distinguish the boundary between the insulating layer 82 and the structure 11. When using a half-tone mask or a gray-tone mask, or when using a multi-layered In the case where the insulating layer 82 and the structure 11 are formed from the same film using a double exposure technique, etc., In some cases, these boundaries do not exist. In such cases, the upper part is not formed. The structure 11 can be regarded as the insulating layer 82, and the other parts can be regarded as the insulating layer 82. As an example, an example in which there is no interface between the insulating layer 82 and the structure 11 is shown. The dashed lines show examples of lines that can be considered as boundaries.

[0080] In addition, when the structure 11 has an inverse tapered shape, as shown in FIG. The EL layer 24 may be divided near the side surface of the structure 11. The conductive layer 25 may be thinned near the side surface of the structure 11, but is formed without being divided. As a result, the EL layer 24 is exposed even in the vicinity of the side surface of the structure 11. Since the conductive layer 25 can cover the wiring without causing any damage, the reliability can be improved. .

[0081] The above is the description of the cross-sectional configuration example 1-1.

[0082] An example in which a part of the configuration is different from the above-mentioned Cross-Sectional Configuration Example 1-1 will be described below.

[0083] [Cross-sectional configuration example 1-2] In FIG. 4A, the thickness of the colored layer 51b is thinner than that of the colored layer 51a, as compared with FIG. An example of the case is shown.

[0084] The lower surface of the colored layer 51a is located lower than the upper surface of the structure 11, and the lower surface of the colored layer 51b is located The colored layer is located higher than the upper surface of the structure 11. In this manner, the thickness of the colored layer varies depending on the pixel. In this case, the structure 11 has a portion located above the lower surface of at least one colored layer. It is sufficient if you have it.

[0085] [Cross-sectional configuration example 1-3] FIG. 4B shows an example in which the EL layer 24 is formed for each pixel, as compared with FIG. 1B. In the configuration shown in FIG. 4B, an EL layer 24a is provided in the portion overlapping with the colored layer 51a. The EL layer 24a and the EL layer 24b are provided in the portion overlapping with the colored layer 51b. The layer 24b includes layers containing luminescent materials that emit light of different colors. The conductive layer 25 is provided between adjacent pixels, and a part of the conductive layer 25 is provided to cover the structure 11. The EL layers 24a and 24b are not separated between adjacent pixels of the same color. It may be formed.

[0086] In this way, even if the EL layer is separately formed, the inclusion of a colored layer makes it extremely A display device with improved color reproducibility can be obtained.

[0087] At this time, the structure 11 is also a matrix material used in forming the EL layer 24a and the EL layer 24b. The metal mask is formed on the EL layer 24a or EL layer 24b. It may also have a function as a spacer.

[0088] [Cross-sectional configuration example 1-4] FIG. 4C shows an example in which the EL layer 24 and the conductive layer 25 are formed separately for each pixel. do.

[0089] FIG. 4C shows a case where the surface of the structure 11 has a portion 11a having liquid repellency. This shows an example in which the EL layer 24 and the conductive layer 25 are formed by an inkjet method or a dispenser method. When a method of forming the structure using a liquid material such as a printing method or a screen printing method is used, Prevents the material of the EL layer 24 or conductive layer 25 from spreading beyond the structure 11 to adjacent pixels. As a result, as shown in FIG. 4C, the EL layer 24 and the conductive layer 25 have two structures. It is provided so as to be located inside the body 11.

[0090] In this example, the EL layer 24 and the conductive layer 25 are formed separately for each pixel. The conductive layer 25 may be formed across adjacent pixels by deposition or sputtering. .

[0091] The EL layer 24 may be formed without being divided between adjacent pixels of the same color. The conductive layer 25 is formed without being divided between adjacent pixels in the depth direction of FIG. It is preferable that

[0092] [Cross-sectional configuration example 1-5] FIG. 5A shows an example in which the conductive layer 25 on the structure 11 and the light-shielding layer 52 are in contact with each other. In the display section 32, a part of the conductive layer 25 may be in contact with the light-shielding layer 52. They may be in contact with each other over the entire area of ​​the display unit 32. In this case, the distance between the substrate 31 and the substrate 21 is less likely to vary, and display unevenness can be reduced. do.

[0093] [Cross-sectional configuration example 1-6] FIG. 5B shows an example in which a light-shielding layer 52 is provided to cover the end portion of the colored layer 51a. With this configuration, the light passing through the colored layer 51a and traveling toward the adjacent pixel can be effectively suppressed.

[0094] [Cross-sectional configuration example 1-7] FIG. 5C shows a semiconductor device in which a part of a single crystal substrate 91 is used as a semiconductor layer instead of the transistor 70. An example in which a transistor 90 is applied is shown.

[0095] A transistor 90 shown in FIG. 5C has a channel region 92, a source region or a drain region, a low resistance region 94a functioning as the other of the source and drain; 94b, an insulating layer 73 functioning as a gate insulating layer, a conductive layer 71 functioning as a gate, etc. The channel region 92, the low resistance region 94a and the low resistance region 94b are formed on a single crystal substrate. The single crystal substrate 91 is provided with a separation layer 97 for separating the elements. It is being done.

[0096] In addition, insulating layers 81a, 81b, and 81c are provided to cover the transistor 90. In addition, a conductive layer 96 is provided on the insulating layer 81a, and the conductive layer 96 and the low resistance region 94a are provided on the insulating layer 81a. or the low resistance region 94b is connected via a connection layer 95a embedded in the insulating layer 81a. Also, the conductive layer 23 is provided on the insulating layer 81c, and the conductive layer 23 and the conductive layer 96 are connected to the insulating layer 81c. 1c. The conductive layer 96 is connected to the insulating layer 81b via a connecting layer 95b embedded in the insulating layer 81b. The surfaces of the electrodes are planarized.

[0097] By adopting such a configuration, extremely fine pixels can be formed on the single crystal substrate 91. This makes it possible to realize a high-definition display device.

[0098] [Cross-sectional configuration example 1-8] FIG. 6A shows an example in which the structure 11 is provided on the substrate 31 side.

[0099] The structure 11 shown in FIG. 6A has a lower surface that is located at a height equal to the height of the colored layer 51a and the colored layer 51b. It is provided so as to be located closer to the substrate 31 than the height of the lower surface.

[0100] The colored layers 51a and 51b are arranged so as to be positioned inside the opening of the insulating layer 82. In this way, the colored layer 51a and the colored layer 51b are preferably provided on the light-emitting layer 51b. The distance to element 40 can be made smaller.

[0101] The structure 11 is provided at a position overlapping the insulating layer 82. 25 may be in contact with each other, or an adhesive layer 39 may be located between them.

[0102] [Cross-sectional configuration example 1-9] FIG. 6B shows an example in which the EL layer 24 is formed for each pixel, as compared with FIG. 6A. The EL layer 24a is provided overlapping the colored layer 51a, and the EL layer 24b is provided overlapping the colored layer 51b. The conductive layer 25 is provided across adjacent pixels.

[0103] In FIG. 6B, a part of the structure 11 and the conductive layer 2 are overlapped with the insulating layer 82. This shows an example where parts of 5 are in contact.

[0104] [Cross-sectional configuration example 1-10] FIG. 6C shows an example in which the EL layer 24 and the conductive layer 25 are formed separately for each pixel. do.

[0105] In this embodiment, the insulating layer 82 has a liquid-repellent portion 82a on its surface. An example in which the EL layer 24b and the conductive layer 25 are located inside the opening of the insulating layer 82 is shown. There are.

[0106] FIG. 6C shows an example in which a part of the structure 11 and a part of the insulating layer 82 are provided in contact with each other. This shows that.

[0107] [Cross-sectional configuration example 1-11] FIG. 7A shows an example in which a liquid crystal element 60 is used as a display element. The liquid crystal element 600 includes a conductive layer 61, a liquid crystal 62, and a conductive layer 63. is a transmissive liquid crystal element that uses the VA (Vertical Alignment) mode. He is a child.

[0108] A conductive layer 61 is provided on the insulating layer 81. The conductive layer 61 is connected to the insulating layer 81 through an opening. 3 and electrically connected to the conductive layer 74 a of the transistor 70 .

[0109] On the substrate 31 side, the insulating layer 6 is provided to cover the colored layer 51a, the colored layer 51b, and the light-shielding layer 52. The insulating layer 64 is included in the colored layer 51a, the colored layer 51b, or the light-shielding layer 52. The insulating layer 64 may have a function of suppressing impurities contained therein from diffusing into the liquid crystal 62 .

[0110] The conductive layer 63 is provided to cover the insulating layer 64. The liquid crystal element 60 includes a conductive layer 61 and a conductive The liquid crystal 62 is sandwiched between two conductive layers 63 .

[0111] Here, the insulating layer 64 is disposed between the colored layers 51a and 51b, and the upper surface of the insulating layer 64 is disposed between the colored layers 51a and 51b. It is preferable that the portion is located above the lower surface of 1a (on the substrate 31 side). The surface of the insulating layer 64 has a recessed portion in the region between the colored layer 51a and the colored layer 51b. In addition, the structure 11 arranged on the substrate 21 side is fitted into the recess of the insulating layer 64. With this configuration, the structure 11 arranged on the substrate 21 side is , can be arranged so as to fit between two adjacent colored layers. Therefore, the insulation The distance between the substrate 21 and the substrate 31 can be made smaller than when the surface of the layer 64 is flat. This makes it possible to improve the viewing angle characteristics.

[0112] The structure 11 functions as a spacer to maintain a predetermined distance between the substrate 21 and the substrate 31. The structure 11 optimizes the distance between the conductive layer 61 and the conductive layer 63 in the liquid crystal element 60. The distance can be controlled.

[0113] Although not shown here, the conductive layer 61 and the liquid crystal 62, and the conductive layer 63 and the liquid crystal 62 are electrically connected to each other. An alignment film for controlling the alignment of the liquid crystal 62 may be provided between them.

[0114] Here, the distance between the upper surface of the conductive layer 61 and the lower surface of the colored layer 51a, etc. is This distance corresponds to the distance d3. If this distance is optimized depending on the configuration of the liquid crystal element 60, For example, the thickness is 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more preferably 1.5 μm or more and 10 μm or less. Preferably, the thickness can be set to 2 μm or more and 5 μm or less.

[0115] [Cross-sectional configuration example 1-12] In FIG. 7B, the display element is equipped with FFS (Fringe Field Switching) The liquid crystal element 60 is configured in the liquid crystal display mode. Both the conductive layer 61 and the conductive layer 63 are provided on the substrate 21 side.

[0116] A conductive layer 61 is provided on an insulating layer 81, and an insulating layer 65 is provided to cover the conductive layer 61. In addition, a conductive layer 63 is provided on the insulating layer 65. The conductive layer 63 has a comb-shaped upper surface. or has a top surface shape with one or more openings (slits).

[0117] The conductive layer 61 is electrically connected to the transistor 70 and functions as a pixel electrode. The conductive layer 63 provided on the conductive layer 61 via the edge layer 65 functions as a common electrode. The conductive layer 63 is connected to the transistor 70 through an opening provided in the insulating layer 65 and the insulating layer 81. The conductive layer 74a may be electrically connected to the conductive layer 74b to function as a pixel electrode. 61 can be provided across adjacent pixels and used as a common electrode.

[0118] In FIG. 7(A) and (B), a material that transmits visible light is used for the conductive layer 61. In addition, both the conductive layer 61 and the conductive layer 63 may be made of a material that transmits visible light. It is preferable to use a conductive material that is transparent to the substrate, since this can increase the aperture ratio.

[0119] In the case of a reflective liquid crystal element, either the conductive layer 61 or the conductive layer 63, or A material that reflects visible light can be used for both of these. In addition, when one of the conductive layers 61 and 63 is provided with a visible light emitting layer, the aperture ratio can be increased. A material that reflects light may be used on one side, and a material that transmits visible light on the other side.

[0120] Alternatively, a material that reflects visible light is used for the conductive layer 61, and a material that transmits visible light is used for the conductive layer 63. In this case, the conductive layer 61 is used to form a semi-transmissive liquid crystal element. The reflection mode uses the light reflected from the conductive layer 61, and the backlight transmits the light through a slit provided in the conductive layer 61. It can be switched between a transparent mode that uses light from the light source and a transparent mode that uses light from the light source.

[0121] Although not shown in FIGS. 7A and 7B, a barrier is provided on the outside of the substrate 21 or the outside of the substrate 31. In addition, a backlight can be arranged on the outside of the substrate 21 and the outside of the substrate 31. A polarizing plate may be provided.

[0122] Here, the distance between the upper surface of the conductive layer 63 and the lower surface of the colored layer 51a, etc. is This distance corresponds to the distance d3. If this distance is optimized depending on the configuration of the liquid crystal element 60, For example, the thickness is 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more preferably 1.5 μm or more and 10 μm or less. Preferably, the thickness can be set to 2 μm or more and 5 μm or less.

[0123] [Example of how to place structures] 8(A) to 8(F) are enlarged views of a part of the display unit 32 as viewed from the display surface side. In this embodiment, a light-shielding layer 52 is provided on the display surface side, and a colored layer 51a, a colored layer 51b, and a colored layer 51c are provided below the light-shielding layer 52. A conductive layer 23 and a structure 11 are provided below the colored layer 51c. The structure 11 and the conductive layer 23 are indicated by dashed lines.

[0124] In FIG. 8(A) to (D), the colored layer 51a, the colored layer 51b, and the colored layer 51c and the shielding layer 51b are shown. The light-shielding layer 52 and each colored layer 52 are arranged in a stripe pattern. The layers have overlapping portions.

[0125] FIG. 8A shows an example in which an island-shaped structure 11 is disposed between two conductive layers 23. The structure 11 is disposed so as to overlap the light-shielding layer 52.

[0126] 8A shows an example in which the structure 11 is longer than the length of the conductive layer 23 in the longitudinal direction. FIG. 8B shows an example in which the structure 11 is shorter than the longitudinal length of the conductive layer 23. FIG. 8(D) shows an example in which the structure 11 has a dot-like shape. In this example, the light shielding layer 11 is arranged in a stripe pattern similar to the light shielding layer 52 and the like.

[0127] 8(E) and (F) show an example in which the light-shielding layer 52 has a lattice shape. Here, the colored layer 51a, the colored layer 51b, and the colored layer 51c overlap the conductive layer 23. The pores have an island-like shape.

[0128] In FIG. 8(E), island-shaped structures 11 are provided along each of the four sides of the conductive layer 23. FIG. 8(F) shows an example in which the structures 11 have a lattice shape. This shows that.

[0129] The shape and arrangement of the structures 11 are not limited to those described above, and may be any shape between two adjacent colored layers. The sensor can be arranged to be located at

[0130] [Cross-section example 2] An example of a more detailed cross-sectional configuration of the display device 10 according to one embodiment of the present invention will be described below. Here, we will explain the case where a top-emission type light-emitting element is used as the display element. Reveal.

[0131] [Cross-sectional configuration example 2-1] 9 is a schematic cross-sectional view of the display device 10. In FIG. 9, the FPC 42 in FIG. 3 shows an example of a cross section of a region including the display unit 32, a region including the circuit 34, and the like. FIG. 9 also shows a cross section of a region including transistors and the like as the display unit 32, and a cross section of a region between adjacent pixels. Cross sections of the regions are shown side by side.

[0132] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A part of the substrate 31 has a function of sealing the light emitting element 40. Also, a polarizing plate is provided on the outer surface of the substrate 31. It is preferred to have 130.

[0133] The substrate 21 is provided with a light emitting element 40, a transistor 201, a transistor 202, and a transistor The capacitor 205, the capacitance element 203, the terminal portion 204, the wiring 35, the structure 11, and the like are provided. Further, on the substrate 31 side, a colored layer 131a, a colored layer 131b, a light-shielding layer 132, etc. are provided. The light emitting element 40 has a structure in which a conductive layer 111, an EL layer 112, and a conductive layer 113 are laminated. A part of the conductive layer 111 functions as a pixel electrode, and a part of the conductive layer 113 functions as a common electrode. The light emitting element 40 is a top emission type light emitting element that emits light toward the substrate 31 side. It is an optical element.

[0134] FIG. 9 shows a cross section including one subpixel as an example of the display unit 32. The element includes a transistor 202, a capacitor 203, a transistor 205, and a light-emitting element 40. For example, the transistor 202 is a switching transistor. The transistor 205 is a selection transistor that controls the current flowing to the light emitting element 40. This is a transistor (drive transistor) that controls the

[0135] FIG. 9 also shows a cross section including a transistor 201 as an example of the circuit 34.

[0136] The colored layers 131a and 131b can be made of materials that transmit different colors. By arranging the sub-pixels that exhibit red, green, and blue colors, It is possible to display the color of the image.

[0137] On the substrate 21, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer The insulating layer 211 is provided with insulating layers such as 215 and 216. The other part functions as a dielectric of the capacitor element 203. The insulating layer 212, the insulating layer 213, and the insulating layer 214 are formed on the respective transistors and the capacitor 203. The insulating layer 214 functions as a planarization layer. In this example, insulating layers 212, 213, and 214 are used as insulating layers for covering transistors and the like. However, the present invention is not limited to this and may have four or more layers. Alternatively, the insulating layer 214 functioning as a planarizing layer may be omitted if not necessary. The insulating layer 215 is provided to cover the conductive layer 224. The insulating layer 216 may function as a planarizing layer. The conductive layer 111 and the conductive layer 224 are electrically connected to each other by covering the contact portion and the like. The insulating layer 216 functions as a planarizing layer.

[0138] In addition, a structure 11 is provided on the insulating layer 216. As shown in FIG. A part of the structure 11 is provided at a position higher than the lower surface of 31a.

[0139] In addition, the transistors 201, 202, and 205 are partially A conductive layer 221 functions as a gate electrode, and a part of the conductive layer 221 functions as a source electrode or a drain electrode. The conductive layer 222 and the semiconductor layer 231 are formed by processing the same conductive film. The layers are shown with the same hatching pattern.

[0140] In FIG. 9, the capacitor 203 is a conductive layer functioning as a gate electrode of the transistor 205. 221, a portion of the insulating layer 211, and the source electrode or drain of the transistor 205. 2 shows an example in which the conductive layer 222 is configured as a part of the conductive layer 222 that functions as a conductive electrode.

[0141] The pair of conductive layers 222 of the transistor 202 is electrically connected to the capacitor 203. The conductive layer 222 on the other side functions as a part of a signal line. The conductive layer 221, which functions as a gate electrode, functions as a part of the scan line.

[0142] In FIG. 9, a transistor having one gate electrode is used as an example of the transistor 202. In addition, a channel is formed in the transistor 201 and the transistor 205. A transistor in which a semiconductor layer 231 is sandwiched between two gate electrodes (conductive layer 221 and conductive layer 223). The transistor with two gate electrodes is shown in Fig. In addition, by connecting two gate electrodes, the voltage can be controlled to the same value. The transistor may be driven by providing a single signal. The field-effect mobility of the MOSFET can be increased compared to other transistors, increasing the on-current. As a result, a circuit capable of high speed operation can be fabricated. By using transistors with large on-state current, the area occupied by the circuit can be reduced. Therefore, even if the number of wirings increases when the display device is made larger or has higher resolution, each wiring It is possible to reduce the signal delay in the line. This can improve display unevenness, for example. It is possible.

[0143] Note that the transistors in the circuit 34 and the transistors in the display unit 32 have the same structure. The transistors in the circuit 34 may all have the same structure. Alternatively, transistors having different structures may be used in combination. The multiple transistors may all have the same structure, or may have different structures. The above data may be used in combination.

[0144] At least one of the insulating layers 212 and 213 that cover the transistors is resistant to water and It is preferable to use a material that is difficult for impurities such as hydrogen to diffuse. This allows the transistor to function as a rear film, preventing external impurities from Therefore, the diffusion of the light can be effectively suppressed, and a highly reliable display device can be realized.

[0145] The conductive layer 224 provided over the insulating layer 214 functions as a wiring. The transistor is connected to the insulating layer 214 through the openings in the insulating layer 213 and the insulating layer 212. The insulating layer 215 is electrically connected to either the source or drain of the transistor. A conductive layer 111 that functions as a base electrode is provided. The conductive layer 111 is provided on an insulating layer 215. Through the opening, an electrical connection is made to one of the conductive layers 224. The layer 111 is electrically connected to one of the source and drain of the transistor 205 through the conductive layer 224. are actively connected.

[0146] An insulating layer 216 is provided to cover the end of the conductive layer 111. The EL layer 112 is The conductive layer 11 is provided to cover the upper surface of the insulating layer 216 and the upper surface of the structure 11. 3 is provided covering the EL layer 112 .

[0147] In the light-emitting element 40, the conductive layer 111 is made of a material that reflects visible light, and the conductive layer 113 is made of a material that reflects visible light. With this configuration, the light emitting element 31 emits light toward the substrate 31 side. The top emission type light emitting element can be a top emission type light emitting element. Since it is possible to place elements such as transistors and capacitors underneath, Note that if both the conductive layer 111 and the conductive layer 113 have a thickness that transmits visible light, the efficiency can be increased. By using a material that can emit light on both the substrate 31 side and the substrate 21 side, a dual emission type is achieved. The light emitting element may be a silicon type light emitting element.

[0148] In addition, a light emitting element that emits white light can be preferably used as the light emitting element 40. This eliminates the need to create separate light-emitting elements 40 for the sub-pixels corresponding to different colors. At this time, the light from the light emitting element 40 is incident on the colored layer 131a. When light passes through the lens, light outside a specific wavelength range is absorbed. For example, this results in red light.

[0149] In addition, a material that reflects visible light is used for the conductive layer 111, and a material that is semi-transparent to visible light is used for the conductive layer 113. A material having transparency and semi-reflection is used, and a visible light is provided between the conductive layer 111 and the conductive layer 113. By providing an optical adjustment layer that transmits light, the light emitting element 40 having a microcavity structure can be formed. In this case, the thickness of the optical adjustment layer may be adjusted according to the sub-pixels corresponding to different colors. In addition, sub-pixels having an optical adjustment layer and sub-pixels not having an optical adjustment layer may be mixed. This is also fine.

[0150] A light-shielding layer 132 is provided on the surface of the substrate 31 facing the substrate 21. The colored layer 131a and the colored layer 131b are provided to cover the openings of the layer 132. 31a, etc. are disposed so as to overlap the light emitting element 40. A part of it is arranged overlapping with the structure 11 .

[0151] The structure 11 can be made of an insulating or conductive material. The structure 11 may be made of an insulating material similar to that of the insulating layer 216. A conductive material may be used, in which case the structure 11 is made electrically floating. Alternatively, by applying the same potential as the conductive layer 113 to the structure 11, the EL layer 112 on the structure 11 It is possible to prevent the light from emitting light.

[0152] FIG. 9 shows an example in which a polarizing plate 130 is provided on the surface of the substrate 31 opposite to the substrate 21 side. It is preferable to use a circular polarizing plate as the polarizing plate 130. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. In order to suppress reflection of external light from a reflective member (such as the conductive layer 111) provided in the display unit 32, It is possible.

[0153] FIG. 9 shows an example in which the light emitting element 40 is sealed with an adhesive layer 141. By using a material with a higher refractive index than air, a space is provided between the light emitting element 40 and the substrate 31. In comparison with the case where the light-emitting element 40 is not covered by the insulating film 44, the light extraction efficiency from the light-emitting element 40 can be improved.

[0154] In addition, a so-called hollow sealing structure in which the adhesive layer 141 is disposed around the display unit 32 may also be used. At this time, the space formed by the substrate 21, the substrate 31, and the adhesive layer 141 is filled with air. The gas may be filled with an inert gas such as a rare gas or nitrogen gas. In addition, if the space is decompressed relative to atmospheric pressure in a steady state, the operating environment (e.g. This prevents the space from expanding due to factors such as air pressure and temperature, causing the substrate 31 or the substrate 21 to swell. On the other hand, if the space is at a positive pressure relative to atmospheric pressure, impurities such as moisture may enter the substrate 31 and the substrate 32. 21, adhesive layer 141, or gaps therebetween, can be prevented from diffusing into the space.

[0155] A terminal portion 204 is provided in an area near the end of the substrate 21. 9. In the configuration shown in FIG. 5 and a conductive layer 111 are laminated to form a terminal portion 204.

[0156] The above is the description of the cross-sectional configuration example 2-1.

[0157] [Cross-sectional configuration example 2-2] FIG. 10 shows a display device 10 using a pair of flexible substrates 171 and 181. The display device 10 shown in FIG. 10 has a display surface that can be bent. .

[0158] The display device 10 shown in FIG. 10 has a substrate 171 instead of the substrate 21 in FIG. 2, and an insulating layer 173. Also, instead of the substrate 31, a substrate 181, an adhesive layer 182, and It has an insulating layer 183 .

[0159] The insulating layer 173 and the insulating layer 183 may be made of a material that is resistant to the diffusion of impurities such as water. preferable.

[0160] In the display device 10 shown in FIG. 10, the insulating layers 173 and 183 are provided to insulate each transistor. The substrate 171, the substrate 181, and the light emitting element 40 are sandwiched between the substrate 171 and the substrate 181. When the adhesive layer 172, the adhesive layer 182, etc. are made of a material that easily diffuses impurities such as water or hydrogen However, the insulating layer 17 located on the inner side (the transistors and the light emitting element 40 side) The diffusion of these impurities is suppressed by the insulating layer 183, and therefore the reliability is improved. In addition, the materials of the substrate 171, the substrate 181, the adhesive layer 172, the adhesive layer 182, etc. When selecting materials, there is no need to consider the diffusivity of impurities, so a variety of materials can be used. can be done.

[0161] [Example of manufacturing method] Here, a method for manufacturing a flexible display device will be described.

[0162] For the sake of convenience, the term refers to a laminated structure including pixels and circuits, and optical components such as colored layers (color filters). The laminated structure including the electrodes and wiring constituting the touch sensor are collectively referred to as The element layer includes, for example, a display element, and in addition to the display element, The display device may include wiring for electrical connection, and elements such as transistors used in pixels and circuits.

[0163] In addition, in this embodiment, a flexible member (e.g., the member shown in FIG. 10) that finally supports the element layer is used. The substrates (substrate 171, substrate 181, etc.) are referred to as substrates. For example, the substrate may have a thickness of This also includes extremely thin films, between 10 nm and 200 μm.

[0164] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods as follows: One is to form an element layer directly on a substrate. The other is to form an element layer on a support substrate different from the substrate, and then peel the element layer from the support substrate. After that, the element layer is transferred onto the substrate.

[0165] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed while the plate is fixed to the supporting substrate, the plate is easily transported within and between devices. This is preferable because it is easier.

[0166] In addition, when a method is used in which an element layer is formed on a supporting base material and then transferred to a substrate, the supporting base material is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support base material and the element layer are peeled off and transferred to a substrate. The material should be selected so that the separation occurs at the interface of the edge layer or in the release layer. By using a material having high heat resistance for the support base material and the peeling layer, the temperature applied when forming the element layer can be reduced. This is advantageous because it is possible to increase the upper limit of the degree of oxidation and form an element layer having elements with higher reliability. I wish.

[0167] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide is laminated, and silicon nitride, silicon oxynitride, etc. are used as an insulating layer on the peeling layer. It is preferable to use a laminate of multiple layers of silicon, silicon oxide nitride, etc. Among them, oxynitride refers to a material whose composition contains more oxygen than nitrogen. The term "nitride oxide" refers to a material whose composition contains more nitrogen than oxygen.

[0168] The element layer and the support substrate can be peeled off by applying a mechanical force or by etching the peeling layer. Examples include etching the surface or allowing a liquid to penetrate the peeled interface. Alternatively, the difference in thermal expansion between the two layers that form the peel interface can be utilized to heat or cool the material. The peeling may be performed by

[0169] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer.

[0170] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. At this time, a part of the organic resin is locally heated using a laser beam or the like. Or, the organic resin is physically cut or penetrated with a sharp object to remove it. Alternatively, a starting point may be formed, and peeling may be performed at the interface between the glass and the organic resin.

[0171] Alternatively, a heat generating layer is provided between a supporting substrate and an insulating layer made of an organic resin, and the heat generating layer is heated. The heat generating layer may be formed by applying a current to the heat generating layer and the insulating layer. Materials that generate heat when current flows through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. For example, the heat generating layer can be made of various materials such as The material to be used can be selected from the group consisting of semiconductors, metals, and insulators.

[0172] In the above-mentioned method, the insulating layer made of organic resin is used as a substrate after peeling. It is possible.

[0173] For example, in the case of the configuration shown in FIG. 10, a first release layer and an insulating layer 173 are formed on a first support substrate. After forming them in order, the upper layer structure is formed. After forming the second release layer and the insulating layer 183 in this order on the base material, the structure above them is formed. Next, the first supporting base material and the second supporting base material are bonded together with an adhesive layer 141. Thereafter, the second release layer is peeled off at the interface between the second release layer and the insulating layer 183 to form the second support base material and the second release layer. The delamination is removed, and the insulating layer 183 and the substrate 181 are bonded together with the adhesive layer 182. The first support base material and the first release layer are removed by peeling at the interface between the release layer and the insulating layer 173. Then, the insulating layer 173 and the substrate 171 are bonded together with the adhesive layer 172. Either side may go first.

[0174] The above is a description of the method for manufacturing a flexible display device.

[0175] [About each component] Each of the above components will be described below.

[0176] A material having a flat surface can be used for the substrate of the display device. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic, etc. Materials such as tantalum, sapphire, and organic resins can be used.

[0177] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. Cut.

[0178] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above-mentioned substrate, a metal substrate or the like can also be used. Metal substrates have high thermal conductivity and the entire substrate Since heat can be easily conducted to the body, local temperature rise of the display device can be suppressed, which is preferable. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less. It is preferable that the thickness is less than 20 μm, and more preferable that the thickness is not less than 50 μm.

[0179] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0180] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0181] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. ×10 -6 Polyamide-imide resin, polyimide resin, PET, etc., with a molecular weight of 0.1 to 1.0 kg / K or less, are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an organic substrate in which inorganic fillers are It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0182] When the above-mentioned materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as sappan, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is formed by using a microfiber. The flexible substrate may be a substrate made of a fiber and a resin. The use of such a structure is preferred because it improves reliability against damage caused by bending or localized pressure. It is nice.

[0183] Alternatively, glass, metal, or the like that is thin enough to be flexible may be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive layer may be used.

[0184] A hard coat layer (e.g. For example, silicon nitride, aluminum oxide, etc.) or a layer of material capable of dispersing pressure (for example, Aramid resin, etc. may be laminated. In addition, the life of the display element may be shortened due to moisture, etc. In order to prevent deterioration, an insulating film with low water permeability may be laminated on a flexible substrate. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, An inorganic insulating material such as aluminum nitride can be used.

[0185] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. By this, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained.

[0186] [Transistor] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. The above describes the case where a bottom-gate transistor is used. is.

[0187] Note that there is no particular limitation on the structure of a transistor included in a touch panel of one embodiment of the present invention. For example, it may be a planar type transistor or a staggered type transistor. Alternatively, a top-gate or bottom-gate transistor may be used. Alternatively, the transistor may have a gate electrode above and below the channel. It may be provided.

[0188] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0189] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element (silicon For the semiconductor layer, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0190] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0191] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal parts. It is preferable to use an oxide semiconductor that cannot be used.

[0192] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0193] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0194] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be discharged for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of each pixel. A display device with reduced power consumption can be realized.

[0195] The semiconductor layer may be, for example, at least indium, zinc, and M (aluminum, titanium, gallium). Umium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium The film includes a film represented by In-M-Zn oxide containing metals such as In or hafnium. In addition, it is preferable to reduce variation in electrical characteristics of a transistor including the oxide semiconductor. Therefore, it is preferable to include a stabilizer therewith.

[0196] The stabilizer includes the metals listed under M above, such as gallium, tin, hafnium, etc. Other stabilizers include tungsten, aluminum, or zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Examples include thulium, ytterbium, and lutetium.

[0197] Examples of oxide semiconductors constituting the semiconductor layer include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-type oxides, In-Er-Zn-type oxides, In-Tm-Zn-type oxides, In-Yb-Zn In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide can be used. can.

[0198] In this case, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be present.

[0199] The semiconductor layer and the conductive layer may contain the same metal element among the above oxides. By using the same metal element for the conductor layer and the conductive layer, the manufacturing cost can be reduced. For example, by using metal oxide targets of the same metal composition, the manufacturing cost can be reduced. In addition, the etching gas or the etching gas used for processing the semiconductor layer and the conductive layer can be used. However, the semiconductor layer and the conductive layer have the same metal element. For example, the composition may differ during the manufacturing process of a transistor or a capacitor. In some cases, metal elements in the film may be released, resulting in a different metal composition.

[0200] The oxide semiconductor constituting the semiconductor layer has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. The off-state current of a transistor can be reduced by using an oxide semiconductor with a wide gap. can be done.

[0201] When the oxide semiconductor constituting the semiconductor layer is In-M-Zn oxide, The atomic ratio of metal elements in the sputtering target used to deposit a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In The preferred ratio is M:Zn=3:1:2, 4:2:4.1, etc. The atomic ratio of the metal elements contained in the sputtering target is included as an error. This includes a fluctuation of plus or minus 40% in the child ratio.

[0202] For the semiconductor layer, an oxide semiconductor film having a low carrier density is used. For example, , the carrier density is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm3 Below, More preferably, 1×10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 below, More preferably, 1×10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than 100 Such an oxide semiconductor can be used as a high-purity intrinsic or This means that the impurity concentration is low and the defect level is small. Since the density is low, it can be said that the oxide semiconductor has stable characteristics.

[0203] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer are determined. It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0204] In the oxide semiconductor that constitutes the semiconductor layer, silicon and carbon, which are group 14 elements, If oxygen is contained in the semiconductor layer, oxygen vacancies increase and the semiconductor layer becomes n-type. The concentrations of silicon and carbon in the body layer (obtained by secondary ion mass spectrometry) were ×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 Below and do.

[0205] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. This may result in an increase in the off-state current of the transistor. Alkaline or alkaline earth metals in body layers obtained by secondary ion mass spectrometry. The concentration of is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0206] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor layer, the electron This causes an increase in carrier density, making it easier to convert to n-type. Transistors using semiconductors tend to be normally-on. The nitrogen concentration obtained by secondary ion mass spectrometry in 18 atoms / cm 3 It is preferable to do the following:

[0207] The semiconductor layer may also have a non-single crystal structure, for example. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor ctor), polycrystalline, microcrystalline, or amorphous structures. , the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states.

[0208] An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and does not contain a crystalline component. Alternatively, the oxide film having an amorphous structure is, for example, a completely amorphous structure without any crystalline portion. do not have.

[0209] Note that the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA C-OS region, and a single crystal structure region. The mixed film may be, for example, a single layer structure including any two or more of the above-described regions, or a stack layer structure.

[0210] <Configuration of CAC-OS Hereinafter, the configuration of CAC (Clou d Aligned Complementary)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described below.

[0211] In this specification and the like, a metal oxide is an oxide of a metal in a broad sense . Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors ), oxide semiconductors (also simply referred to as Oxide Semiconductor or OS) . For example, when a metal oxide is used for the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when described as an OS FET , it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor.

[0212] In this specification, when a metal oxide has a region having a conductor function and a region having a dielectric function mixed therein and functions as a semiconductor as a whole, it is defined as CAC (Clou d Aligned Complementary)-OS (Oxide Semico nductor), or CAC-metal oxide.

[0213] In other words, CAC-OS is a type of oxide semiconductor in which the elements constituting the oxide semiconductor are 0.5 nm or more thick. Distributed in a size of 10 nm or less, preferably 0.5 nm to 3 nm or less, or in the vicinity thereof In the following, the oxide semiconductor is one of the materials. The element is unevenly distributed, and the region having the element is 0.5 nm or more and 10 nm or less, preferably A mixture of particles with sizes between 0.5 nm and 3 nm or close to that size is called a mosaic or is also called patchy.

[0214] In a region where a specific element is concentrated, the physical properties are determined by the properties of the element. For example, among the elements that make up metal oxides, elements that tend to be insulators are unevenly distributed. On the other hand, among the elements that make up metal oxides, some are relatively conductive. A region where elements that tend to be conductive are concentrated becomes a conductive region. The mosaic-like mixture of body regions allows the material to function as a semiconductor.

[0215] In other words, the metal oxide in one embodiment of the present invention is a mixture of materials with different physical properties. matrix composite, or metal matrix composite It is a type of metal matrix composite.

[0216] Note that the oxide semiconductor preferably contains at least indium. In addition to these, it is preferable to include an element M (M is gallium, aluminium, etc.). Aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One selected from the group consisting of tungsten, hafnium, tantalum, and magnesium, Or several kinds) may be included.

[0217] For example, CAC-OS in In-Ga-Zn oxide (In- The Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0.) or Indium Zinc Oxide (hereinafter, In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0. ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) ), or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z1 and Z2 are real numbers greater than 0.) The material is separated into a mosaic pattern. The mosaic-like InO X1 , or In X2 Zinc Y2 O Z2 is uniformly distributed in the film. This is a configuration (hereinafter also referred to as a cloud-like configuration).

[0218] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the number of In atoms relative to the element M in the first region is The first region has a ratio of In to the element M that is greater than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of the second region.

[0219] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compound include those represented by the following formula:

[0220] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned on the ab plane. In the case of ZnO, the crystal structure is non-oriented and connected.

[0221] On the other hand, CAC-OS refers to the material composition of an oxide semiconductor. In a material composition containing Ga, Zn, and O, some of the nanoparticles are mainly composed of Ga. The region where In is observed as a nanoparticle and the region where In is observed as a nanoparticle are mainly composed of In are shown in Fig. Therefore, in CAC-OS, The crystal structure is a secondary factor.

[0222] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0223] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 There may be cases where a clear boundary cannot be observed in the region where [substance] is the main component.

[0224] In addition, instead of gallium, one or more selected from aluminum, silicon, boron, yttrium, copper, barium, sodium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium etc. are included, then in CAC-OS, a nanoparticle-like region with the element as the main component is observed in part, and a nanoparticle-like region with In as the main component is observed in part, and it refers to a configuration where they are randomly dispersed in a mosaic pattern. Partially, a nanoparticle-like region with the element as the main component is observed, and partially, a nanoparticle-like region with In as the main component is observed, and they are randomly dispersed in a mosaic pattern. Partially, a nanoparticle-like region with the element as the main component is observed, and partially, a nanoparticle-like region with In as the main component is observed, and they are randomly dispersed in a mosaic pattern.

[0225] <Analysis of CAC-OS> Subsequently, using various measurement methods, the results of measuring the oxide semiconductor formed on the substrate will be described. Subsequently, using various measurement methods, the results of measuring the oxide semiconductor formed on the substrate will be described.

[0226] ≪Composition and Fabrication Method of Samples≫ Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. In addition, the sample has a structure including a substrate and an oxide semiconductor on the substrate. Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. In addition, the sample has a structure including a substrate and an oxide semiconductor on the substrate. Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. In addition, the sample has a structure including a substrate and an oxide semiconductor on the substrate.

[0227] The fabrication method of each sample will be described.

[0228] First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. The film formation conditions are such that the pressure in the chamber is 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. Also, the sputtering apparatus (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used. Also, the sputtering apparatus An AC power of 2500 W is supplied to an oxide target placed in the chamber.

[0229] As a condition for forming an oxide film, the substrate temperature is set to a temperature at which the substrate is not intentionally heated (hereinafter (also called room temperature or RT), 130°C, or 170°C. The flow rate ratio of oxygen gas to the mixed gas of the raw material (hereinafter referred to as the oxygen gas flow rate ratio) is set to 10%. , 30%, or 100%, resulting in nine samples.

[0230] <Analysis by X-ray diffraction> In this section, X-ray diffraction (XRD) was performed on nine samples. The results of the measurement are described below. The XRD device used was a Bruker product. D8 ADVANCE was used. The conditions were θ / In 2θ scan, the scanning range is 15 deg. to 50 deg., and the step width is 0.02d. For example, the scanning speed was 3.0 deg. / min.

[0231] Figure 30 shows the results of measuring the XRD spectrum using the out-of-plane method. In addition, in Fig. 30, the upper row shows the measurement results for a sample with a substrate temperature condition of 170°C during film formation. The middle row shows the measurement results for a sample with a substrate temperature of 130°C during film formation, and the lower row shows the film formation The left column shows the results of measurements taken with the substrate temperature at RT. The center column shows the results of measurements taken with the gas flow rate ratio at 10%. The right column shows the results for the sample with a 30% oxygen gas flow rate, and the right column shows the results for the sample with a 100% oxygen gas flow rate. The measurement results are shown below.

[0232] The XRD spectrum shown in FIG. 30 shows that the increase in the substrate temperature during film formation or the increase in the amount of acid during film formation By increasing the ratio of the atomic gas flow rate, the peak intensity around 2θ=31° increases. The peak near 2θ=31° indicates that the c-axis is oriented in the direction approximately perpendicular to the surface on which the film is formed or the upper surface. The c-axis aligned crystal of IGZO compound (CAAC) It is also called line-IGZO.

[0233] In addition, the XRD spectrum shown in FIG. 30 shows that the substrate temperature during film formation was low or the oxygen gas The smaller the flow rate ratio, the less clear the peak. Alternatively, the sample with a small oxygen gas flow rate ratio had ab-plane and c-axis orientations in the measurement area. It can be seen that no direction is visible.

[0234] Analysis by electron microscope In this section, the samples were prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. ,HAADF(High-Angle Annular Dark Field)-S TEM(Scanning Transmission Electron Micro The results of the observation and analysis using the HAADF-scope are described below (hereafter, HAADF- Images obtained by STEM are also called TEM images.

[0235] Planar images obtained by HAADF-STEM (hereinafter also referred to as planar TEM images) and The results of image analysis of the cross-sectional images (hereinafter also referred to as cross-sectional TEM images) will be explained. The TEM images were observed using a spherical aberration correction function. The images were taken using an atomic resolution analytical electron microscope, JEM-ARM200F, manufactured by JEOL Ltd. The specimen was irradiated with an electron beam having an acceleration voltage of 200 kV and a beam diameter of approximately 0.1 nmφ.

[0236] FIG. 31(A) shows a film formed at a substrate temperature of RT and an oxygen gas flow rate of 10%. The planar TEM image of the sample is shown in Fig. 31(B). The cross-sectional TEM image of a sample prepared with a gas flow rate of 10%.

[0237] <Analysis of electron diffraction patterns> In this section, the samples were prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. By irradiating the sample with an electron beam with a probe diameter of 1 nm (also called a nano-beam electron beam), The results of acquiring sagittal diffraction patterns will now be described.

[0238] As shown in FIG. 31(A), the substrate temperature during film formation was RT, and the oxygen gas flow rate was 10%. In the planar TEM image of the sample, black spots a1, a2, a3, a4, and The electron diffraction pattern shown at point a5 is observed. The line is projected and moved at a constant speed from the 0 second position to the 35 second position. The results for point a1 are shown in Figure 31(C), the results for black point a2 are shown in Figure 31(D), and the results for black point a3 are shown in Figure 31(E). (E), the results for black point a4 are shown in FIG. 31(F), and the results for black point a5 are shown in FIG. 31(G).

[0239] From Figures 31(C), 31(D), 31(E), 31(F), and 31(G) In the image, a circular (ring-shaped) area of ​​high brightness can be observed. Multiple spots can be observed.

[0240] In addition, as shown in FIG. 31(B), the substrate temperature RT during film formation and the oxygen gas flow rate ratio of 10% In the cross-sectional TEM image of the sample prepared in the above, black spots b1, b2, b3, b4, and Observe the electron diffraction patterns shown by black spots b1 and b5. The results for point b2 are shown in Figure 31(I), the results for black point b3 are shown in Figure 31(J), and the results for black point b4 are shown in Figure 31(K). The results for (K) and black point b5 are shown in Figure 31(L).

[0241] From Figure 31(H), Figure 31(I), Figure 31(J), Figure 31(K), and Figure 31(L) A ring-shaped area of ​​high brightness can be observed. In addition, multiple spots can be observed in the ring-shaped area. It can be measured.

[0242] For example, for a CAAC-OS having an InGaZnO4 crystal, When an electron beam with a probe diameter of 300 nm is incident on the row, the (00 9) The diffraction pattern includes spots due to the CAAC-OS It has been found that the film has a c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the surface on which the film is formed or the upper surface. On the other hand, an electron beam with a probe diameter of 300 nm is incident perpendicularly to the surface of the same sample. In other words, the CAAC-OS has a ring-shaped diffraction pattern along the a-axis and It is clear that the b-axis has no orientation.

[0243] In addition, a nanocrystalline oxide semiconductor nc-OS) with a large probe diameter When electron diffraction is performed using an electron beam (e.g., 50 nm or larger), a halo pattern is observed. A diffraction pattern is observed. In addition, a small probe diameter electron beam (e.g. When nanobeam electron diffraction is performed using a material with a diameter of less than 50 nm, bright spots are observed. In addition, when nanobeam electron diffraction was performed on the nc-OS, a circular (ring-shaped) In some cases, a bright area is observed. In addition, multiple bright spots are observed in a ring-shaped area. It may be measured.

[0244] Electron beam diffraction of a sample prepared at substrate temperature RT during film formation and oxygen gas flow rate of 10% The pattern has a ring-shaped area of ​​high brightness and multiple bright points in the ring area. The sample was fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. The folding pattern is nc-OS, and there is no orientation in the planar direction or cross-sectional direction. stomach.

[0245] From the above, oxide semiconductors formed at low substrate temperatures or with a small oxygen gas flow rate are The oxide semiconductor film has a structure that is clearly different from that of an amorphous oxide semiconductor film and that of a single crystal oxide semiconductor film. It can be assumed that the substance has the following properties.

[0246] ≪Elemental analysis≫ In this article, we will discuss energy dispersive X-ray spectroscopy (EDX). EDX mapping was obtained and evaluated using vective X-ray spectroscopy. By evaluating the film formation, the substrate temperature was set at RT and the oxygen gas flow rate was set at 10%. The results of elemental analysis of the samples are described below. The energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used as the analyzer. A Si drift detector is used to detect the X-rays emitted from the sample.

[0247] In EDX measurement, each point in the analysis area of ​​the sample is irradiated with an electron beam, The energy and frequency of the characteristic X-rays of the sample are measured, and the EDX spectrum corresponding to each point is obtained. In this embodiment, the peaks in the EDX spectrum at each point are determined as electron transitions to the L shell of the In atom. electron transition to the K shell of Ga atom, electron transition to the K shell of Zn atom, and electron transition to the K shell of O atom The ratio of each atom at each point is calculated. By performing EDX analysis on the target area, an EDX map showing the distribution of the ratio of each atom is obtained. It is possible.

[0248] FIG. 32 shows the results of the deposition of the sample at the substrate temperature RT and oxygen gas flow rate of 10%. FIG. 32(A) shows EDX mapping of Ga atoms. (The ratio of Ga atoms to the total atoms is in the range of 1.18 to 18.64 [atomic%].) FIG. 32(B) shows the EDX mapping of In atoms (the ratio of In atoms to the total atoms). The ratio of children is in the range of 9.28 to 33.74 [atomic%]. (C) EDX mapping of Zn atoms (ratio of Zn atoms to total atoms is 6.69 to 8.74). 24.99 [atomic%] range.) Also, Fig. 32(A) and Fig. 32( 32B) and FIG. 32C show the substrate temperature RT and the oxygen gas flow rate ratio 10% during film formation. The cross section of the sample prepared in step 1 shows the same area. The more elements in the range are measured, the brighter the light becomes, and the fewer elements in the range are measured, the darker the light becomes. The ratio of elements is shown by light and dark. The magnification of the EDX mapping shown in Figure 32 is 720. Ten thousand times more.

[0249] In the EDX mapping shown in Figures 32(A), 32(B), and 32(C), the images The relative light and dark distribution can be seen in the figure. The substrate temperature RT and oxygen gas flow rate ratio during film formation are In the sample made at %, it can be seen that each atom exists with its own distribution. In Fig. 32(A), Fig. 32(B), and Fig. 32(C), the areas enclosed by solid lines and the areas enclosed by dashed lines are Pay attention to the range.

[0250] In FIG. 32(A), the area enclosed by the solid line contains many relatively dark areas, and the area enclosed by the dashed line contains many relatively dark areas. In FIG. 32(B), the area surrounded by the solid line contains many relatively bright areas. The area surrounded by the dashed line contains many relatively bright areas, while the area surrounded by the dashed line contains many relatively dark areas.

[0251] In other words, the area surrounded by the solid line is the area with a relatively large amount of In atoms, and the area surrounded by the dashed line is the area with a relatively large amount of In atoms. This is a region with relatively few atoms. In FIG. 32(C), the area surrounded by the solid line The right side is a relatively bright area, and the left side is a relatively dark area. The range is In X2 Zinc Y2 O Z2 , or InO X1 This is an area where the main components are:

[0252] The area surrounded by the solid line is the area with relatively few Ga atoms, and the area surrounded by the dashed line is the area with relatively few Ga atoms. In Figure 32(C), the upper left area in the area enclosed by the dashed line is The upper right area is a relatively bright area, and the lower right area is a relatively dark area. The area enclosed by the dashed line is GaO X3 , or Ga X4 Zinc Y4 O Z4 Areas where the main components are It is.

[0253] In addition, from Figures 32(A), 32(B), and 32(C), the distribution of In atoms is G It is relatively more uniformly distributed than a atoms, and InO X1 The region where is the main component is In X 2Zn Y2 O Z2 It appears that the two are connected to each other through the regions where In this way, X2 Zinc Y2 O Z2 , or InO X1 The area where is the main component is It spreads and forms like a cloud.

[0254] Thus, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or In O X1 In-Ga-Zn oxide with a structure in which the regions in which The compound can be referred to as CAC-OS.

[0255] The crystal structure of CAC-OS is an nc structure. The c-structure is IGZO including single crystal, polycrystal, and CAAC structures in the electron diffraction pattern. In addition to the bright spots caused by In addition to several bright spots, a ring-shaped area of ​​high brightness appears, indicating crystallization. The structure is defined.

[0256] In addition, from Fig. 32(A), Fig. 32(B), and Fig. 32(C), GaO X3 is the main component In a certain area, and In X2 Zinc Y2 O Z2 , or InO X1The size of the region in which is the principal component The size is preferably 0.5 nm to 10 nm, or 1 nm to 3 nm. Preferably, in the EDX mapping, the diameter of the region in which each element is the main component is 1 nm or more and 2 nm or less.

[0257] From the above, it can be seen that CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. and has properties different from those of IGZO compounds. X3 N The regions where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 The area where is the main component The structure is such that the regions having each element as a main component are in a mosaic pattern.

[0258] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X This is a region with high conductivity compared to the region where In 3 is the main component. X2 Zinc Y2 O Z2 , or InO X1 The carriers flow through the area where the main component is oxygen. Therefore, the conductivity of In is expressed as a semiconductor. X2 Zinc Y2 O Z2 , or InO X1 The region where the main component is a metal is distributed in a cloud-like shape in the oxide semiconductor, which results in a high electric field efficiency. As a result, a high mobility (μ) can be achieved.

[0259] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 OZ2 , or InO X1 This region has higher insulating properties than the region where GaO is the main component. X3 etc. By distributing the region containing the main component in the oxide semiconductor, leakage current is suppressed and a good Switching operation can be achieved.

[0260] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation and , In X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ), and high field-effect mobility (μ) can be done.

[0261] In addition, semiconductor devices using CAC-OS have high reliability. It is ideal for a variety of semiconductor devices including displays.

[0262] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even when the pixels are extremely fine, the gate drive circuit and the source drive circuit can be This makes it possible to form the circuits and pixels on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0263] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, the use of amorphous silicon in this case is preferable compared to polycrystalline silicon. Since it can be formed at low temperatures, it is highly resistant and can be used as a material for wiring and electrodes below the semiconductor layer, and as a material for substrates. The possibility of using low-heat materials allows for a wider range of material choices. For example, a very large glass substrate can be used. Since the impurity region of the transistor is easily formed in a self-aligned manner, the characteristics of the transistor are not uniform. In this case, it is preferable to use polycrystalline silicon or single crystal silicon. This is suitable for use in

[0264] [Conductive Layer] In addition to the gates, sources, and drains of transistors, various wiring and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and titanium alloys. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or thallium Examples of the metals include tin and tin oxide, and alloys containing tin as the main component. Films containing the materials can be used as single layers or as multilayer structures. For example, silicon A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a stainless steel film, and a copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on top of a titanium film or titanium nitride film is laminated on top of that with an aluminum film. A titanium or copper film is laminated on the copper film, and a titanium or titanium nitride film is formed on the copper film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is further formed on top of the copper film. Incidentally, oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, the use of copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0265] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as various wiring and electrodes that constitute the display device, and conductive layers of the display element. The conductive layer may also be used as a pixel electrode or a common electrode.

[0266] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic and epoxy. In addition to resins and resins with siloxane bonds, silicon oxide, silicon oxynitride, silicon oxynitride Inorganic insulating materials such as silicon, silicon nitride, and aluminum oxide can also be used.

[0267] In addition, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. Can be controlled.

[0268] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0269] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0270] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0271] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0272] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole transporting material, hole blocking material, high electron transporting material, electron injection The material contains a highly conductive material or a bipolar material (a material with high electron transport and hole transport properties). The insulating layer may further include a layer containing the insulating layer.

[0273] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0274] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0275] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A light emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) is used. It is preferable to use a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions as well.

[0276] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (e.g., host material, assist material) as the phosphorescent layer, and both of the emitting layers A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0277] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0278] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. In addition, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metallic materials such as iron, cobalt, copper, palladium, or titanium, including these metallic materials Alloys or nitrides of these metal materials (e.g., titanium nitride) may also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, the electrical conductivity can be increased, which is preferable. Graphene or the like may also be used. .

[0279] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. The alloy containing silver and copper is In addition, when the aluminum film or the aluminum alloy film is in contact with the aluminum film, the heat resistance is high. By laminating a metal film or a metal oxide film on the insulating layer, oxidation can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. The conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and indium may be laminated. laminated film of silver-magnesium alloy and indium-tin-oxide, etc. It can be used.

[0280] The electrodes may be formed by vapor deposition or sputtering. The shape is created using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0281] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the The layer including a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, and polymers). For example, by using quantum dots in the light-emitting layer, It can also function as such.

[0282] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0283] [Liquid crystal element] The liquid crystal element may be, for example, a vertical alignment (VA) A liquid crystal element in which the vertical alignment mode is applied can be used. Multi-Domain Vertical Alignment mode, PVA( Patterned Vertical Alignment) mode, ASV (Adv Anced Super View mode, etc. can be used.

[0284] In addition, the liquid crystal element may be a liquid crystal element to which various modes are applied. For example, in addition to VA mode, TN (Twisted Nematic) mode, IPS (In -Plane-Switching mode, FFS (Fringe Field Switching) mode itching) mode, ASM(Axially Symmetric aligne) d Micro-cell mode, OCB (Optically Compensated ed Birefringence mode, FLC (Ferroelectric L iquid Crystal mode, AFLC (AntiFerroelectric) Liquid crystal elements using the Liquid Crystal (LC) mode can be used. .

[0285] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is achieved by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field). The liquid crystal used in the liquid crystal element is These include thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, and polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal, Ferroelectric Liquid Crystal These liquid crystal materials can be used as cholesteric or antiferroelectric liquid crystals depending on the conditions. These phases include nematic, smectic, cubic, chiral nematic, and isotropic phases.

[0286] As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used. It is only necessary to use an optimum liquid crystal material depending on the mode and design to be applied.

[0287] In addition, an alignment film can be provided to control the alignment of the liquid crystal. When adopting this method, liquid crystals exhibiting a blue phase without using an alignment film may be used. When the temperature of a cholesteric liquid crystal is increased, the cholesteric phase changes to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is difficult to distinguish between the two. In order to improve the range, a liquid crystal composition containing a chiral agent of several weight percent or more is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response time and optically isotropic In addition, the liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent does not require alignment treatment. In addition, no alignment film is required, and the viewing angle dependency is small. This prevents electrostatic damage caused by rubbing, and This can reduce defects and damage to the liquid crystal display device during the manufacturing process.

[0288] The liquid crystal element may be a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element. An element or the like can be used.

[0289] When using a transmissive or semi-transmissive liquid crystal element, two polarizing A backlight is provided on the outer side of the polarizing plate. It may be a direct-light type backlight or an edge-light type backlight. Direct backlight equipped with LED (Light Emitting Diode) This makes local dimming easier and increases contrast. In addition, when an edge-light type backlight is used, the touch panel including the backlight can be easily illuminated. This is preferable because it allows the thickness of the chip panel module to be reduced.

[0290] When using a reflective liquid crystal element, a polarizing plate is provided on the display surface side. It is preferable to place a light diffusion plate on the display surface side, since this improves visibility.

[0291] [Adhesive layer] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0292] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture may enter the element. This is preferable because it can suppress the occurrence of the problem of the noise and improve the reliability of the display panel.

[0293] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, and di Ruthenium, etc. can be used.

[0294] [Connection Layer] The connection layer is made of anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0295] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0296] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metals, and metal oxides. , a composite oxide including a solid solution of a plurality of metal oxides, etc. For example, a laminated film containing a material having a certain color may be used. A laminated structure of a film containing the material to be used and a film containing the material to be used for a colored layer that transmits light of another color By using the same material for the colored layer and the light-shielding layer, the device can be standardized. This is preferable because it can simplify other steps.

[0297] The above is a description of each component.

[0298] [Configuration example 2] Hereinafter, examples of the display device according to one embodiment of the present invention will be described, including an input / output device (touch panel), an input A configuration example of a device (touch sensor) etc. will be described.

[0299] In this specification and the like, a display panel, which is one aspect of a display device, displays an image or the like on a display surface. Therefore, a display panel is one type of output device. be.

[0300] In the present specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). inted Circuit) or TCP (Tape Carrier Packa ge) or COG (Chip On Gauge) connectors attached to the board. A display panel module is a device that has an IC (integrated circuit) mounted using a method such as a glass mounting method. , a display module, or simply a display panel.

[0301] In addition, in this specification, a touch sensor is a sensor that is touched by a detection object such as a finger or a stylus. The touch sensor has the function of detecting the input or the proximity of the touch panel. This is one aspect of the device.

[0302] In addition, in this specification and the like, a substrate having a touch sensor is referred to as a touch sensor panel or a single In this specification, the base of the touch sensor panel is A board with a connector, such as FPC or TCP, attached, or a substrate A touch sensor panel module is a device that has an IC mounted on it using a COG method or other methods. It may be called a sensor module, a sensor module, or simply a touch sensor.

[0303] In this specification and the like, a touch panel, which is one aspect of a display device, is a device for displaying images, etc. on a display surface. The function of displaying (outputting) and detecting when a detectable object such as a finger or stylus touches or approaches the display surface. The touch panel has a function as a touch sensor that detects the touch of a button. This is one aspect of an input / output device.

[0304] The touch panel is, for example, a display panel (or display device) with a touch sensor, It can also be called a display panel (or display device) with a display function.

[0305] The touch panel may also have a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside. do.

[0306] In the present specification, the substrate of the touch panel is provided with a connector such as an FPC or TCP. Those with connectors attached, or those with ICs mounted on the board using the COG method, etc. When called a touch panel module, a display module, or simply a touch panel, There is.

[0307] [Touch sensor configuration example] An example of the configuration of the input device (touch sensor) will be described below with reference to the drawings.

[0308] 11A shows a schematic top view of the input device 150. The input device 150 includes a substrate 160. A plurality of electrodes 151, a plurality of electrodes 152, a plurality of wirings 155, and a plurality of wirings 156 are provided on the substrate. The substrate 160 also has a plurality of electrodes 151 and a plurality of electrodes 152. A flexible printed circuit (FPC) 157 is installed. FIG. 11A shows an example in which an IC 158 is provided on an FPC 157. There are.

[0309] FIG. 11B shows an enlarged view of the area surrounded by the dashed line in FIG. 11A. The electrode pattern has a shape in which multiple diamond-shaped electrode patterns are aligned in the horizontal direction of the paper. The diamond-shaped electrode patterns are electrically connected to each other. Similarly, the electrode 152 is A plurality of diamond-shaped electrode patterns are arranged in the vertical direction of the paper, and the diamond-shaped electrodes are arranged in a row. The electrode patterns are electrically connected to each other. A part of these overlaps and crosses each other. At this crossing part, the electrodes 151 and 152 An insulator is sandwiched between the wires to prevent them from being electrically shorted out.

[0310] As shown in FIG. 11C, a plurality of diamond-shaped electrodes 152 are connected to each other to form a bridge electrode. The island-shaped electrodes 152 may be arranged vertically. The two adjacent electrodes 152 are electrically connected by a bridge electrode 153. With this configuration, the electrodes 151 and 152 can be formed by processing the same conductive film. Therefore, the variation in the film thickness of these layers can be suppressed. This makes it possible to suppress variations in the resistance value and light transmittance of each electrode depending on the location. Here, the electrode 152 has a bridge electrode 153. Such a configuration may also be used.

[0311] As shown in FIG. 11D, the electrodes 151 and 152 shown in FIG. 11B The inside of the diamond-shaped electrode pattern may be hollowed out, leaving only the outline. At this time, if the width of the electrodes 151 and 152 is thin enough not to be visually recognized by the user, As described later, the electrodes 151 and 152 are made of a light-shielding material such as a metal or an alloy. In addition, the electrode 151 or the electrode 152 shown in FIG. 11(D) may be the bridge electrode 1. 53 may be provided.

[0312] Each electrode 151 is electrically connected to one wiring 155. 2 is electrically connected to one wiring 156. One of them corresponds to a row wiring, and the other corresponds to a column wiring.

[0313] The IC158 has a function of driving the touch sensor. is supplied to either electrode 151 or electrode 152 via wiring 155 or wiring 156. In addition, the current (or potential) flowing through either the electrode 151 or the electrode 152 is The signal is input to IC 158 via line 155 or wiring 156 .

[0314] Here, when the input device 150 is placed on the display surface of the display panel to form a touch panel, In this case, the electrodes 151 and 152 are preferably made of a light-transmitting conductive material. In addition, the electrodes 151 and 152 are formed using a light-transmitting conductive material, and the electrodes 151 and 152 are formed using a light-transmitting conductive material. When the current is taken out through the electrode 151 or the electrode 152, the current is taken out between the electrode 151 and the electrode 152. It is preferable to dispose a conductive film containing the same conductive material as the dummy pattern. In this way, a part of the gap between the electrodes 151 and 152 is filled with a dummy pattern. As a result, the brightness of the light passing through the input device 150 can be reduced. This can reduce unevenness in the degree of reflection.

[0315] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium are used. A film containing graphene can also be used. The film containing graphene is, for example, For example, the graphene oxide film can be reduced. As a method for this, a method of applying heat can be mentioned.

[0316] Alternatively, a metal or alloy that is thin enough to have light transmission properties can be used. For example, gold , silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metals such as titanium, copper, palladium, or titanium, or alloys containing such metals, can be used. Alternatively, a nitride of the metal or alloy (for example, titanium nitride) may be used. Further, a laminated film in which two or more conductive films containing the above-mentioned materials are laminated may be used.

[0317] In addition, the electrodes 151 and 152 are made thin enough that they are not visible to the user. A conductive film may be used. For example, such a conductive film may be processed into a lattice (mesh) shape. As a result, high conductivity and high visibility of the display device can be obtained. nm or more and 100 μm or less, preferably 50 nm or more and 50 μm or less, more preferably 50 nm or more and 100 μm or less. It is preferable that the width of the pattern is 10 μm or less. A conductive film having a line width is preferable because it is extremely difficult for a user to visually recognize the conductive film.

[0318] As an example, FIG. 12(A) to (D) show enlarged views of a part of the electrode 151 or the electrode 152. FIG. 12(A) shows an example in which a lattice-shaped conductive film 146 is used. At this time, the conductive film 146 is arranged so as not to overlap with a display element of the display device. This is preferable because it does not block light from the display device. The direction of the grating is the same as that of the display element array, and the period of the grating is an integer multiple of the period of the display element array. It is preferable to do so.

[0319] FIG. 12B shows a lattice-shaped conductive film processed to form triangular openings. 147. By adopting such a configuration, compared to the case shown in FIG. Therefore, it is possible to achieve a lower resistance overall.

[0320] Also, as shown in FIG. 12C, a conductive film 14 having a pattern shape without periodicity With this configuration, moire is prevented when the display unit of the display device is overlapped. It is possible to suppress the occurrence of the above problems.

[0321] Alternatively, the electrodes 151 and 152 may be made of conductive nanowires. ) shows an example in which a nanowire 149 is used. By distributing the particles at an appropriate density so that they come into contact with each other, a two-dimensional network is formed. For example, the average diameter of the conductive film is 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, more preferably 5 nm Nanowires having a diameter of 25 nm or more can be used. Nanowires, metal nanowires such as Cu nanowires and Al nanowires, or carbon Nanotubes and other materials can be used. For example, Ag nanowires have a light transmittance of 89%. %, and the sheet resistance value can be 40 Ω / □ or more and 100 Ω / □ or less.

[0322] The above is a description of the configuration example of the touch sensor.

[0323] [Touch panel configuration example] As an example of a display device according to one embodiment of the present invention, a configuration example of a touch panel will be described below with reference to FIG. The description will be given with reference to the surface.

[0324] FIG. 13A is a schematic perspective view of the touch panel 100. FIG. 13B is a schematic perspective view of a pair of FIG. 1 is a perspective schematic diagram of the semiconductor device with the substrate separated. For clarity, only representative components are shown. 13(B), only the outline of the substrate 31 is shown by a broken line.

[0325] The touch panel 100 includes a substrate 31 on which an input device 150 is provided and a substrate 21. The configuration of the substrate 21 side can be based on the above-mentioned configuration example 1. This can be done.

[0326] The configuration of the input device 150 can be based on the above-mentioned example of the touch sensor. In the embodiment, an input device 150 includes a plurality of electrodes 151, a plurality of electrodes 152, a plurality of wirings 155, and a plurality of electrodes 153, 1 shows a case in which the number of wirings 156 is large.

[0327] As the input device 150, for example, a capacitive touch sensor can be used. There are various types of capacitive touch sensors, such as surface capacitive touch sensors and projected capacitive touch sensors. There are two types of methods: self-capacitance and mutual capacitance. This is preferable because it enables point detection. In the following, a projected capacitive touch sensor is applied. The following describes the case where this is done.

[0328] However, the present invention is not limited to this, and may be applied to detecting the proximity or contact of a detection object such as a finger or a stylus. Various sensors capable of detecting a subject may be applied to the input device 150.

[0329] The touch panel 100 shown in FIGS. 13(A) and 13(B) has an input device 150 provided on a substrate 31. The wiring 155 and the wiring 156 of the input device 150 are connected to each other via a connection portion 169. It is electrically connected to the FPC 42 connected to the substrate 21 side.

[0330] With this configuration, the FPC connected to the touch panel 100 is located on one of the substrates ( In this case, the touch panel 100 can be provided only on the substrate 21 side. However, as shown in Fig. 13(A) and (B), The panel 100 is provided with one FPC 42, and the FPC 42 is Supplying signals to both inputs reduces the number of components and simplifies the configuration. preferable.

[0331] The connection portion 169 is configured to include a connection body having anisotropic conductivity, for example. The connector may be, for example, a conductive particle. The particles used are organic resin or silica particles whose surfaces are coated with a metal material. It is preferable to use nickel or gold as the metal material since the contact resistance can be reduced. In addition, nickel is coated with gold, and two or more metal materials are coated in layers. It is preferable to use particles. Also, a material that undergoes elastic or plastic deformation is used as the connector. At this time, the conductive particles may be crushed in the vertical direction. This increases the contact area between the connector and the conductive layer electrically connected thereto, thereby reducing the contact resistance. This not only reduces resistance but also suppresses the occurrence of problems such as poor connections.

[0332] The connection body is covered with an adhesive layer 141 (not shown) that bonds the substrate 21 and the substrate 31. For example, after applying a paste or the like to be the adhesive layer 141, The connecting material may be sprayed on the connecting portion 169. The connecting portion 169 is disposed on the portion where the adhesive layer 141 is to be provided. In this case, the adhesive layer 141 is also disposed on the display unit 32 (also called a solid sealing structure). In addition, for example, a light emitting device having a hollow sealing structure, a liquid crystal display device, etc., the adhesive layer 141 is The same can be applied to any configuration that uses the same.

[0333] Also, in Figures 13(A) and 13(B), unlike Figure 1(A), IC168 is mounted on FPC42. In this case, the IC 168 has a function of driving the input device 150. Alternatively, an IC for driving the input device 150 may be mounted on the board 21, the board 31, or the FPC. It may be provided separately at 42, etc.

[0334] [Cross-sectional configuration example] Next, an example of a cross-sectional configuration of the touch panel 100 will be described. 14 is a schematic cross-sectional view of the filter 100. Compared to FIG. 9, FIG. 14 shows a structure in which the substrate 31 is not bonded to the adhesive layer 141. The main difference is in the side configuration.

[0335] On the surface of the substrate 31 facing the substrate 21, an insulating layer 161, an insulating layer 162, an insulating layer 163, and an insulating layer The insulating layer 161 and the insulating layer 162 are laminated with each other. Between the insulating layer 162 and the insulating layer 163, the electrodes 151, 152, etc. are provided. A bridge electrode 153 is provided between the insulating layer 163 and the insulating layer 164. The insulating layer 164 has a colored layer 131a, a colored layer 131b, and a light-shielding layer 131b on the surface of the adhesive layer 141. 132 and others are provided.

[0336] FIG. 14 clearly shows the intersection of the electrodes 151 and 152. The bridge electrode 153 is The electrode 152 is electrically connected to the two electrodes 151 sandwiching the electrode 152 through an opening provided in the insulating layer 163. is connected to

[0337] The electrodes 151 and 152 are provided at positions overlapping the light-shielding layer 132. In FIG. 4, an example is shown in which the electrode 151 is disposed so as not to overlap the light emitting element 40. In other words, the electrode 151 has a mesh shape having an opening that overlaps with the light emitting element 40. With this configuration, the electrode 151 is disposed on the path of the light emitted by the light emitting element 40. Therefore, there is substantially no decrease in brightness due to the placement of the electrode 151, and visibility is improved. In addition, the electrode 152 has a similar structure. It can be said that it is completed.

[0338] In addition, since the electrodes 151 and 152 do not overlap the light emitting element 40, the resistance to these electrodes is relatively low. Therefore, the electrodes 151 and 152 can be made of a light-transmitting conductive material. The sensitivity of the touch sensor can be improved as compared to the case where a conductive material is used.

[0339] In FIG. 14, the electrodes 151 and 152 (and the bridge electrode 153) are arranged on the substrate 3. In this example, a light-shielding layer 133 is provided on the first side of the substrate 1 so as to overlap the light-shielding layer 133. Therefore, even if a metal material is used for the electrode 151, etc., the reflection of external light can be suppressed. Therefore, a touch panel with higher visibility can be realized. Although an example in which two light-shielding layers, i.e., layer 133, are provided has been shown, it is also possible to provide only one of them. Good too.

[0340] In addition, the polarizing plate 130 on the substrate 31 is not provided, and the substrate 31 is placed under the test object such as a finger or a stylus. The substrate 31 may be used as a substrate that comes into direct contact with a sensor. The protective layer is preferably a silicon oxide or aluminum oxide. It uses inorganic insulating materials such as yttrium oxide and yttria-stabilized zirconia (YSZ). The substrate 31 may be made of tempered glass. The surface is subjected to physical or chemical treatment such as air cooling and tempering, and compressive stress is applied to the surface. The touch sensor can be attached to one side of the tempered glass, and the other side By providing this surface on the outermost surface of an electronic device and using it as a touch surface, the thickness of the entire device can be reduced. The size can be reduced.

[0341] As shown in FIG. 14, a light emitting element 40, a plurality of transistors, and a touch sensor are included. By disposing electrodes between the substrate 21 and the substrate 31, a touch panel with a reduced number of parts can be obtained. It is possible to realize a channel.

[0342] The configuration of the touch panel 100 is not limited to this. For example, an input device 150 may be provided. The substrate may be laminated on the display device 10 shown in FIG. 1(A) to form a touch panel. stomach.

[0343] 15, electrodes 151 and 152 constituting the touch sensor are disposed on the substrate 2 of the substrate 31. This is an example of a structure formed on the opposite side of the first side. It can be called a rule.

[0344] An electrode 151 and an electrode 152 are formed on the substrate 31, and an insulating layer 163 is formed to cover them. In addition, a bridge electrode 153 is provided on the insulating layer 163.

[0345] The substrate 170 functions as a touch surface, for example, a touch panel for an electronic device. When installed, it functions as a part of the housing or as a protective glass. 1 is attached to the substrate 1 by an adhesive layer 165.

[0346] In FIG. 15, the electrode 151 is not only overlapped with the light-shielding layer 132 but also overlaps with the light-emitting element 4. 0, an example in which the electrode is disposed in an area overlapping with the colored layer 131a, etc. The material 151 can be a material that transmits visible light. For example, a film containing a metal oxide or , a film containing graphene, or a film containing a metal or alloy that is thin enough to transmit visible light, etc. The electrode 151 can be used in the same manner as the electrode 152. The ridge electrode 153 may also be made of a similar material that transmits visible light, but the bridge electrode 153 When the light shielding layer 132 is overlapped with the bridge electrode 153 or when the area of ​​the bridge electrode 153 is extremely small, In this case, a material that blocks visible light, such as a metal or an alloy, may be used.

[0347] The above is a description of an example of the cross-sectional configuration of a touch panel.

[0348] [Configuration example 3] Hereinafter, as an example of a display device according to one embodiment of the present invention, a display device including both a reflective liquid crystal element and a light-emitting element will be described. A display device (display panel) that has a transmissive mode and a reflective mode and can display in both modes. This type of display panel is called a TR-hybrid display. (Transmissive OLED and Reflective LC Hyb It can also be called a rid display.

[0349] One example of such a display panel is a liquid crystal element having an electrode that reflects visible light, and a light emitting element. In this case, the electrode that reflects visible light is open. It is preferable that the opening and the light emitting element are arranged to overlap each other. In the through mode, the light emitting element can be driven so that light is emitted from the opening. In addition, a transistor for driving a liquid crystal element and a transistor for forming a light emitting element are It is preferable that the light emitting element and the liquid crystal element are arranged on the same plane. It is preferable that the layers are laminated with an intervening layer.

[0350] Such display panels are displayed in reflective mode when used outdoors or in other places with bright external light. This allows the device to operate with extremely low power consumption. However, by displaying in a transmissive mode, images can be displayed at optimal brightness. In addition, by displaying in both transmissive and reflective modes, the display is extremely bright in ambient light. Compared to conventional display panels, it consumes less power and has higher contrast even in bright places. It is possible to display the information in a clear manner.

[0351] [Configuration example] FIG. 16A is a block diagram showing an example of the configuration of the display device 200. The display device 20 has a plurality of pixels 210 arranged in a matrix on a display unit 32. 00 includes a circuit GD and a circuit SD. Also, a plurality of pixels 210 arranged in a direction R, A plurality of wirings G1, a plurality of wirings G2, and a plurality of wirings ANO electrically connected to the circuit GD, The pixel 210 includes a plurality of wirings CSCOM arranged in a direction C, and a circuit SD The semiconductor device has a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the semiconductor device.

[0352] The pixel 210 has a reflective liquid crystal element and a light emitting element. The substrate and the light emitting element have an overlapping portion.

[0353] FIG. 16B1 shows a configuration example of the conductive layer 191 included in the pixel 210. The conductive layer 191 is The conductive layer 191 functions as a reflective electrode of the liquid crystal element in the pixel 210. 251 is provided.

[0354] In FIG. 16(B1), the light emitting element 40 located in the area overlapping with the conductive layer 191 is indicated by a dashed line. The light emitting element 40 is disposed so as to overlap with the opening 251 of the conductive layer 191. As a result, the light emitted by the light emitting element 40 is emitted to the display surface side through the opening 251 .

[0355] In FIG. 16(B1), pixels 210 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 16(B1), in two pixels adjacent to each other in the direction R, the opening 2 51 are preferably provided at different positions on the conductive layer 191 so as not to be arranged in a line. This makes it possible to separate the two light emitting elements 40, and the light emitted by the light emitting elements 40 The phenomenon in which the light from the adjacent pixel 210 enters the colored layer of the adjacent pixel 210 (also called crosstalk) In addition, the two adjacent light emitting elements 40 can be arranged apart from each other. Therefore, even when the EL layer of the light emitting element 40 is separately produced using a shadow mask or the like, This makes it possible to realize a display device with high resolution.

[0356] Alternatively, an arrangement as shown in FIG. 16(B2) may be used.

[0357] If the ratio of the total area of ​​the openings 251 to the total area of ​​the non-openings is too large, In addition, the ratio of the total area of ​​the openings 251 to the total area of ​​the non-openings If the value is too small, the display using the light emitting element 40 will be dark.

[0358] In addition, if the area of ​​the opening 251 provided in the conductive layer 191 functioning as a reflective electrode is too small, Therefore, the efficiency of light extraction from the light emitted by the light emitting element 40 decreases.

[0359] The shape of the opening 251 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. The shape may also be thin stripes, slits, or a checkered pattern. The apertures 251 may be arranged close to adjacent pixels. The pixels are arranged close to the other pixels to be displayed, which helps to suppress crosstalk.

[0360] [Circuit configuration example] 17 is a circuit diagram showing a configuration example of a pixel 210. In FIG. 17, two adjacent pixels It shows 210.

[0361] The pixel 210 includes a switch SW1, a capacitance element C1, a liquid crystal element 60, a switch SW2, a transistor The pixel 210 includes a transistor M, a capacitance element C2, and a light emitting element 40. G1, wiring G2, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically connected. In addition, in FIG. 17, a wiring VCOM1 electrically connected to the liquid crystal element 60 and A wiring VCOM2 electrically connected to the light emitting element 40 is shown.

[0362] FIG. 17 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0363] The switch SW1 has a gate connected to the line G1 and a source or drain connected to the line S 1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element 6 The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 60 is connected to the wiring VCOM1.

[0364] The switch SW2 has a gate connected to the wiring G2 and a source or drain The other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the source of the transistor M. The transistor M is connected to one of the source and drain, and the wiring ANO. The other of the drains is connected to one electrode of the light emitting element 40. The electrode is connected to the wiring VCOM2.

[0365] In FIG. 17, a transistor M has two gates that sandwich a semiconductor. These are connected to form This increases the current that the transistor M can pass. It is possible.

[0366] A signal for controlling the switch SW1 to a conductive state or a non-conductive state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal in the liquid crystal element 60 can be given. M can be given a predetermined potential.

[0367] A signal for controlling the switch SW2 to a conductive state or a non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 40 to emit light is generated between the wiring VCOM2 and the wiring ANO. The wiring S2 can be connected to a potential that controls the conduction state of the transistor M. A signal can be given to

[0368] In the pixel 210 shown in FIG. 17, when performing display in a reflective mode, the wiring G1 and the wiring The liquid crystal element 60 is driven by a signal applied to the line S1 and optically modulated to produce a display. In addition, when displaying in a transmissive mode, the signal applied to the wiring G2 and the wiring S2 is The light emitting element 40 can be driven in either mode to emit light for display. In this case, the signals given to the wirings G1, G2, S1 and S2 are It can be driven more.

[0369] [Example of a cross-sectional configuration of a display device] FIG. 18 shows a schematic cross-sectional view of a display device 200.

[0370] The display device 200 has an insulating layer 220 between the substrate 21 and the substrate 31. Between the insulating layer 220, the light emitting element 40, the transistor 205, the transistor 206, and the color The liquid crystal element 60, the colored layer 13, etc. are disposed between the insulating layer 220 and the substrate 31. 1, structure 11, etc.

[0371] The substrate 21 and the insulating layer 220 are bonded together with an adhesive layer 141. The border layer 220 is attached with an adhesive layer 142 that seals the liquid crystal.

[0372] The liquid crystal element 60 is a reflective liquid crystal element. The liquid crystal element 60 is made up of a conductive layer 192, a liquid crystal 193, and a conductive layer 194. The conductive layer 192 has a laminated structure of a conductive layer 193 and a conductive layer 194. The conductive layer 191 functions as a reflective electrode of the liquid crystal element 60. The conductive layer 191 has an opening 251. The conductive layer 192 contains a material that transmits visible light. .

[0373] The light emitting element 40 is a bottom emission type light emitting element. A laminated structure in which a conductive layer 111, an EL layer 112, and a conductive layer 113 are laminated in this order from the side of the substrate 20 is formed. The conductive layer 113 includes a material that reflects visible light, and the conductive layer 111 includes a material that transmits visible light. The light emitted by the light emitting element 40 is guided through the colored layer 134, the insulating layer 220, the opening 251, the conductive layer 222, and the insulating layer 220. The light is emitted to the substrate 31 side through the conductive layer 192 and the like.

[0374] Furthermore, a structure 12 is provided on an insulating layer 216 that covers the end portion of the conductive layer 111 . The structure 12 functions as a spacer that prevents the insulating layer 220 and the substrate 21 from coming closer than necessary. It should be noted that the structure 12 does not have to be provided if it is not necessary.

[0375] One of the source and drain of the transistor 205 is electrically connected to the conductive layer 111 of the light-emitting element 40. For example, transistor 205 is electrically connected to transistor M in FIG. handle.

[0376] One of the source and drain of the transistor 206 is connected to the conductive layer 19 through a terminal portion 207. 1 and the conductive layer 192. The terminal portion 207 is The conductive layers provided on both sides of the insulating layer 220 are connected to each other through the openings provided in the insulating layer 220. For example, the transistor 206 is a switch in FIG. Compatible with SW1.

[0377] A terminal portion 204 is provided in an area of ​​the substrate 21 that does not overlap with the substrate 31. 04 electrically connects the conductive layers provided on both sides of the insulating layer 220, similar to the terminal portion 207. The upper surface of the terminal portion 204 is a conductive layer obtained by processing the same conductive film as the conductive layer 192. As a result, the terminal portion 204 and the FPC 42 are electrically connected via the connection layer 242. can be effectively connected.

[0378] A colored layer 131 and a light-shielding layer 132 are provided on the substrate 21 side of the substrate 31. An insulating layer 195 is provided to cover the light-shielding layer 131 and the light-shielding layer 132. The insulating layer 195 is The conductive layer 194 is provided on the substrate 21 side of the insulating layer 195. It is being done.

[0379] In addition, a connection portion 252 is provided in a portion of the area where the adhesive layer 142 is provided. In the connecting portion 252, a conductive layer obtained by processing the same conductive film as the conductive layer 192 and a conductive layer 194 are electrically connected to each other by the connecting member 243. A signal input from the FPC 42 connected to the substrate 21 side is input to the conductive layer 194 formed on the substrate 21 side. Alternatively, the potential can be supplied via connection 252 .

[0380] The structure 11 is provided between the conductive layer 192 and the conductive layer 194. This has the function of maintaining the cell gap of the crystal element 60. In this case, the structure is the opposite to that shown in FIG. In this example, the body 11 is formed on the substrate 31 side. Also, the surface of the insulating layer 195 has a recess. The structure 11 is formed at a position overlapping the recess. The surface (part of the surface located on the display surface side) is located above the lower surface of the colored layer 131. Therefore, it is possible to reduce the distance between the substrate 21 and the substrate 31, and improve the viewing angle characteristics. It can be improved.

[0381] Although not shown here, the conductive layer 194 and the liquid crystal 193 and the conductive layer 192 and the liquid crystal 193 may be connected to each other. An alignment film for controlling the alignment of the liquid crystal 193 may be provided between the liquid crystals 193. A part of the alignment film may be provided so as to cover the surface of the structure 11 .

[0382] An example of a method for manufacturing the display device 200 will be described. On the plate, a conductive layer 192, a conductive layer 191, and an insulating layer 220 are formed in this order, and then a transistor is formed. After forming the light emitting element 40 and the like, the substrate 21 and the support substrate are attached using the adhesive layer 141. Then, the interfaces between the release layer and the insulating layer 220 and the release layer and the conductive layer 192 are aligned. The support substrate and the release layer are removed by peeling. A substrate 31 is prepared on which a light-shielding layer 132, a structure 11, etc. are formed in advance. 1 or substrate 31, and the substrate 21 and substrate 31 are bonded together with an adhesive layer 142. By combining these, the display device 200 can be produced.

[0383] The peeling layer is made of a material that peels off at the interface between the insulating layer 220 and the conductive layer 192. In particular, a layer containing a high melting point metal material such as tungsten can be used as the release layer. A layer containing an oxide of the metal material is laminated, and silicon nitride is used as the insulating layer 220 on the release layer. It is preferable to use a multi-layer structure including silicon, silicon oxynitride, silicon oxynitride, etc. When a high melting point metal material is used for the peeling layer, the formation temperature of the subsequent layers is increased. This makes it possible to reduce the concentration of impurities and realize a highly reliable display device.

[0384] The conductive layer 192 may be made of a metal oxide, a metal nitride, or a low-resistance oxide semiconductor. In the case of using an oxide semiconductor, it is preferable to use an oxide of hydrogen, boron, lithium, or the like. At least one of the concentrations of sulphur, nitrogen, and other impurities and the amount of oxygen vacancies is determined. The conductive layer 192 may be made of a material having a higher thermal conductivity than a semiconductor layer used for the capacitor.

[0385] The above is an explanation of configuration example 3.

[0386] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0387] (Embodiment 2) In this embodiment, an input device (touch sensor) that can be used for the display device of one embodiment of the present invention will be described. An example of a driving method will be described.

[0388] FIG. 19A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 601 and a current detection circuit 602 are shown. In (A), the electrode 621 to which the pulse is applied and the electrode 622 to which the change in the current is detected are The number of electrodes is shown as six, namely, wirings X1-X6 and wirings Y1-Y6. In addition, in FIG. 19A, the electrode 621 and the electrode 622 overlap each other. Alternatively, the electrode 621 and the electrode 622 are arranged close to each other to form a capacitance 603. The functions of the electrodes 621 and 622 may be interchangeable.

[0389] For example, the electrode 151 illustrated in the first embodiment corresponds to one of the electrodes 621 and 622. The electrode 152 corresponds to the other of the electrode 621 and the electrode 622 .

[0390] The pulse voltage output circuit 601 inputs pulse voltages to the wirings X1-X6 in sequence, for example. The current detection circuit 602 detects the current flowing through each of the wirings Y1-Y6, for example. This is a circuit for detecting this.

[0391] When a pulse voltage is applied to one of the wirings X1-X6, a voltage that forms a capacitance 603 is generated. An electric field is generated between the electrodes 621 and 622, and a current flows through the electrode 622. A part of the electric field generated in the sensor is shielded by the proximity or contact of a detected object such as a finger or pen. As a result, the magnitude of the current flowing through electrode 622 changes. Change.

[0392] For example, when there is no proximity or contact of the object to be detected, the magnitude of the current flowing through the wires Y1-Y6 is The value of the capacitance 603 corresponds to the capacitance of the capacitor. When part of the field is blocked, the magnitude of the current flowing through the wires Y1-Y6 decreases. By utilizing this, the proximity or contact of a sensing object can be detected.

[0393] The current detection circuit 602 detects the (temporal) integral value of the current flowing through one wire. In that case, the detection may be performed using, for example, an integrating circuit. In this case, for example, the current may be converted into a voltage, and the peak value of the voltage may be detected. The value may be detected.

[0394] FIG. 19B shows input and output waves in the mutual capacitance type touch sensor shown in FIG. In FIG. 19(B), the detection of each matrix in one sensing period is shown. In FIG. 19(B), the case where the contact or proximity of the object to be detected is not detected is shown. There are two cases: when the sensor detects contact or proximity of a sensing object (when touched) and when the sensor detects contact or proximity of a sensing object (when touched). Here, the wiring Y1-Y6 is shown in the figure according to the magnitude of the detected current. The corresponding voltage waveforms are shown.

[0395] As shown in FIG. 19(B), pulse voltages are sequentially applied to the wirings X1-X6. In response, current flows through the wires Y1-Y6. In response to the change in the voltage, the same current flows through the wires Y1-Y6, so The output waveforms of each are similar. On the other hand, when touching, among the wirings Y1-Y6, The current flowing through the wiring located in contact with or close to the object to be detected is reduced, as shown in Figure 1. The output waveform changes as shown in FIG. 9(B).

[0396] In FIG. 19B, the detection object is located at or near the intersection of the wire X3 and the wire Y3. 13 shows an example of a case where the objects are in contact or in close proximity to each other.

[0397] In this way, in the mutual capacitance method, the electric field generated between a pair of electrodes is shielded, resulting in a By detecting the change in the current, the position information of the object to be detected can be obtained. When the detection sensitivity is high, the object to be detected is far from the detection surface (e.g. the surface of a touch panel). However, the coordinates can also be detected.

[0398] In addition, in the case of a touch panel, the display period of the display unit and the sensing period of the touch sensor By using a driving method in which the driving time is shifted from the normal driving time, the detection sensitivity of the touch sensor can be increased. For example, if a display period and a sensing period are separated during one frame period, In this case, it is preferable to provide two or more sensing periods in one frame period. By increasing the frequency of sensing, the detection sensitivity can be further improved.

[0399] The pulse voltage output circuit 601 and the current detection circuit 602 are, for example, a single IC chip. It is preferable that the IC is formed in the touch panel. It is preferable that the terminal is mounted on a substrate inside the housing of an electronic device. When using a touch panel, parasitic capacitance increases at the bent parts, increasing the effect of noise. Therefore, it is recommended to use ICs that use a driving method that is less susceptible to noise. For example, a driving method that increases the signal-to-noise ratio (S / N ratio) is applied. It is preferable to use an IC having such a configuration.

[0400] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0401] (Embodiment 3) In this embodiment mode, the transistors described in the above embodiment modes can be replaced with An example of a transistor that can be implemented will be described with reference to the drawings.

[0402] The display device of one embodiment of the present invention includes a bottom-gate transistor or a top-gate transistor. The present invention can be implemented using various types of transistors, such as transistors having different shapes, such as transistors having different shapes. The semiconductor layer material and transistor structure can be easily replaced to suit the production line. It is possible.

[0403] [Bottom-gate transistor] FIG. 20(A1) shows a channel protection transistor, which is a type of bottom gate transistor. 20(A1) is a cross-sectional view of a transistor 810. In FIG. The transistor 810 is formed on a substrate 771 with an insulating layer 772 formed thereon. The semiconductor layer 742 is disposed on the electrode 746 with an insulating layer 726 interposed therebetween. The electrode 746 can function as a gate electrode. The insulating layer 726 can function as a gate insulating layer. It can function as such.

[0404] In addition, an insulating layer 741 is provided over a channel formation region of the semiconductor layer 742. An electrode 744a and an electrode 744b are provided on the insulating layer 726 in contact with a part of the insulating layer 742. Electrode 744a can function as either a source electrode or a drain electrode. , which can function as the other of the source electrode or the drain electrode. A portion of the electrode 744 b is formed on the insulating layer 741 .

[0405] The insulating layer 741 can function as a channel protection layer. 1, the thickness of the semiconductor layer 742 generated when the electrodes 744a and 744b are formed can be reduced. Therefore, when the electrodes 744a and 744b are formed, the semiconductor This can prevent the channel formation region of the layer 742 from being etched. According to this method, a transistor having good electrical characteristics can be realized.

[0406] The transistor 810 has an insulating layer 744 a, an electrode 744 b, and an insulating layer 741. It has an edge layer 728 and an insulating layer 729 on top of the insulating layer 728 .

[0407] For example, the insulating layer 772 may be formed using the same material and method as the insulating layer 722 or the insulating layer 705. Note that the insulating layer 772 may be a stack of a plurality of insulating layers. For example, the semiconductor layer 742 is formed using the same material and method as the semiconductor layer 708. The semiconductor layer 742 may be a stack of a plurality of semiconductor layers. For example, electrode 746 can be formed using similar materials and methods as electrode 706. The electrode 746 may be a laminate of multiple conductive layers. The insulating layer 6 can be formed using the same material and method as the insulating layer 707. Layer 726 may be a stack of multiple insulating layers. The electrode 744b is formed using the same material and method as the electrode 714 or the electrode 715. The electrodes 744a and 744b may be laminated with a plurality of conductive layers. For example, the insulating layer 741 is formed using the same material and method as the insulating layer 726. The insulating layer 741 may be a laminate of a plurality of insulating layers. For example, the insulating layer 728 can be formed using the same materials and methods as the insulating layer 710. The insulating layer 728 may be a laminate of a plurality of insulating layers. The insulating layer 29 can be formed using the same material and method as the insulating layer 711. The edge layer 729 may be a stack of multiple insulating layers.

[0408] The electrodes, semiconductor layers, insulating layers, and the like constituting the transistor disclosed in this embodiment are the same as those of other It can be formed using the materials and methods disclosed in the embodiment.

[0409] When an oxide semiconductor is used for the semiconductor layer 742, at least one of the electrodes 744a and 744b At least in the portion in contact with the semiconductor layer 742, oxygen is taken from a portion of the semiconductor layer 742, and oxygen deficiency is formed. It is preferable to use a material capable of generating oxygen vacancies in the semiconductor layer 742. The carrier concentration in the region where this occurs increases, the region becomes n-type, and the n-type region (n + layer) Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, and oxygen vacancies occur. Examples of materials capable of generating this include tungsten and titanium. Cut.

[0410] The source and drain regions are formed in the semiconductor layer 742, forming an electrode 744. a and the contact resistance between the electrode 744b and the semiconductor layer 742 can be reduced. To improve the electrical characteristics of transistors, such as field effect mobility and threshold voltage. can be done.

[0411] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744 a and between the semiconductor layer 742 and the electrode 744b, It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. , can function as a source or drain region of a transistor.

[0412] The insulating layer 729 has a function of preventing or reducing the diffusion of impurities from the outside into the transistor. It is preferable to form the insulating layer 729 using a material having the above-mentioned properties. It can also be omitted.

[0413] Note that in the case where an oxide semiconductor is used for the semiconductor layer 742, the insulating layer 729 is formed before or after the insulating layer 729 is formed. Heat treatment may be performed after the formation of the insulating layer 729 or before or after the formation of the insulating layer 729. The oxygen contained in the insulating layer 729 or other insulating layers is diffused into the semiconductor layer 742, The oxygen vacancies in the insulating layer 742 can be filled. Alternatively, the insulating layer 729 can be formed while being heated. This makes it possible to compensate for oxygen vacancies in the semiconductor layer 742.

[0414] Generally, the CVD method is a plasma CVD (PECVD) method that uses plasma. sma Enhanced CVD method, Thermal CVD (TCVD) Furthermore, depending on the source gas used, it can be classified into metal CVD (MCV) and other methods. D:Metal CVD) method, MOCVD:Metal Organi c CVD) method.

[0415] Generally, the deposition method includes resistance heating deposition, electron beam deposition, MBE (Molecular Beam Evaporation), and r Beam Epitaxy) method, PLD (Pulsed Laser Deposit) tion) method, IBAD(Ion Beam Assisted Deposition) ) method, ALD (Atomic Layer Deposition) method, etc. .

[0416] The plasma CVD method can produce high-quality films at relatively low temperatures. When using a deposition method that does not use plasma, such as the plasma deposition method, damage occurs to the deposition surface. This makes it possible to obtain a film with fewer defects.

[0417] Generally, the sputtering method is classified into DC sputtering method, magnetron sputtering method, sputtering method, RF sputtering method, ion beam sputtering method, ECR (Electron Cycling) on Cyclotron Resonance) sputtering method, facing targets It can be classified into methods such as sputtering.

[0418] In the facing target sputtering method, the plasma is confined between the targets. This reduces the plasma damage to the substrate. Since the incident angle of the sputtered particles to the substrate can be made shallow, the step coverage is improved. It can be improved.

[0419] The transistor 811 shown in FIG. 20A2 has an insulating layer 729 over which a backgate electrode is formed. The transistor 810 differs from the transistor 810 in that it has an electrode 723 that can function as a It may be formed from materials and in a manner similar to that of pole 746 .

[0420] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the gate electrode. The back gate electrode can be made to function in the same manner as the gate electrode. Alternatively, the potential may be a ground potential (GND potential) or an arbitrary potential. By changing the potential of the gate electrode independently of the potential of the gate electrode, the transistor can be The threshold voltage can be varied.

[0421] Both the electrode 746 and the electrode 723 can function as a gate electrode. Thus, the insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 is provided between the insulating layer 728 and the insulating layer 729. It is okay.

[0422] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "transistor." For example, in the transistor 811, the electrode 723 is called a "gate electrode." When referring to the back gate electrode, the electrode 746 is referred to as the "back gate electrode." When the transistor 811 is used as a "top electrode," the transistor 811 is a top-gate type transistor. In addition, either the electrode 746 or the electrode 723 can be considered as a type of The first gate electrode is sometimes referred to as the "first gate electrode" and the other as the "second gate electrode."

[0423] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, By setting the potentials of the electrodes 46 and 723 at the same potential, carriers flow in the semiconductor layer 742. The area becomes larger in the film thickness direction, so the amount of carrier movement increases. As the on-state current of the transistor 811 increases, the field-effect mobility increases.

[0424] Therefore, the transistor 811 is a transistor having a large on-current relative to its area. That is, the area occupied by the transistor 811 is According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0425] In addition, since the gate electrode and the back gate electrode are formed of a conductive layer, the outside of the transistor The function of preventing the electric field generated by the electrostatic discharge from acting on the semiconductor layer in which the channel is formed (especially the electrostatic discharge The back gate electrode is larger than the semiconductor layer. By forming the semiconductor layer in a thin layer and covering it with a back gate electrode, the electric field shielding function can be improved. do.

[0426] In addition, the electrodes 746 and 723 each have a function of blocking an electric field from the outside. Therefore, the electric charges of the charged particles generated on the insulating layer 772 side or above the electrode 723 are transferred to the semiconductor layer This does not affect the channel formation region of the MOSFET. As a result, stress tests (e.g., applying a load to the gate) -GBT (Gate Bias-Temperature) stress test In addition, the on-current starts to flow depending on the magnitude of the drain voltage. This can reduce the phenomenon that the gate voltage (start voltage) changes. The effect occurs when the electrodes 746 and 723 are at the same potential or at different potentials. .

[0427] The BT stress test is a type of accelerated test that detects the transitions that occur during long-term use. It is possible to evaluate the characteristic changes (aging) of transistors in a short time. The amount of change in the threshold voltage of a transistor before and after testing is an important indicator for investigating reliability. The smaller the threshold voltage fluctuation, the more reliable the transistor. do.

[0428] In addition, the electrodes 746 and 723 are provided, and the electrodes 746 and 723 are set to the same potential. By doing so, the amount of variation in the threshold voltage is reduced. At the same time, the variation in electrical characteristics is reduced.

[0429] In addition, a transistor with a back gate electrode has a positive charge applied to the gate +GB The change in threshold voltage before and after the T stress test was also Smaller than Zysta.

[0430] In addition, by forming the back gate electrode with a conductive film having a light shielding property, This prevents light from entering the semiconductor layer from the electrode side. This can prevent degradation of electrical characteristics such as a shift in the threshold voltage of a transistor. do.

[0431] According to one embodiment of the present invention, a highly reliable transistor can be provided. As a result, a highly reliable semiconductor device can be realized.

[0432] FIG. 20(B1) shows a channel-protection transistor, which is one of bottom-gate transistors. 8 shows a cross-sectional view of transistor 820. Transistor 820 is similar to transistor 810. 7, except that an insulating layer 741 covers the edge of a semiconductor layer 742. In addition, a part of the insulating layer 741 overlapping the semiconductor layer 742 is selectively removed to form an opening. In the semiconductor layer 742, the semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a part of the insulating layer 741 overlapping the semiconductor layer The insulating layer 741 overlaps the channel forming region and the electrode 744b. This region can function as a channel protection layer.

[0433] The transistor 821 shown in FIG. 20B2 has a backgate electrode over the insulating layer 729. The transistor 820 differs from the transistor 820 in that it has an electrode 723 that can function as a transistor.

[0434] By providing the insulating layer 741, the semiconductor generated during the formation of the electrodes 744a and 744b is prevented. Therefore, the formation of the electrodes 744a and 744b can be prevented. In some cases, thinning of the semiconductor layer 742 can be prevented.

[0435] In addition, the transistors 820 and 821 are the same as the transistors 810 and The distance between the electrodes 744a and 746 and the distance between the electrodes 744b and 746 are smaller than that of the transistor 811. The distance between the electrodes 744a and 746 is increased. In addition, the parasitic capacitance between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with good electrical characteristics can be realized. can.

[0436] The transistor 825 shown in FIG. 20C1 is a bottom-gate transistor. The transistor 825 is a channel etched transistor. The electrodes 744a and 744b are formed without using any of the electrodes 744a and 744b. A part of the semiconductor layer 742 that is exposed when the electrode 744b is formed may be etched. On the other hand, since the insulating layer 741 is not provided, productivity of the transistor can be increased.

[0437] A transistor 826 shown in FIG. 20C2 has an insulating layer 729 over which a backgate electrode is formed. The transistor 724 differs from the transistor 825 in that it has an electrode 723 that can function as a transistor.

[0438] [Top-gate transistor] FIG. 21A1 illustrates a transistor 830, which is a type of top-gate transistor. Transistor 830 includes a semiconductor layer 742 over an insulating layer 772. An electrode 744 a in contact with a part of the semiconductor layer 742 and an insulating layer 772 are provided on the semiconductor layer 742 and the insulating layer 772. and an electrode 744b in contact with a part of the semiconductor layer 742. An insulating layer 726 is provided over the electrode 744 b , and an electrode 746 is provided over the insulating layer 726 .

[0439] The transistor 830 is connected to the electrodes 746 and 744a, and the electrodes 746 and Since the electrodes 746 and 744b do not overlap, the parasitic capacitance between the electrodes 746 and 744a, In addition, the parasitic capacitance occurring between the electrode 746 and the electrode 744b can be reduced. After the electrode 746 is formed, the electrode 746 is used as a mask to introduce impurities 755 into the semiconductor. By introducing the ions into the semiconductor layer 742, the ions are self-aligned in the semiconductor layer 742. An impurity region can be formed (see FIG. 21A3). According to one embodiment of the present invention, A transistor with good electrical characteristics can be realized.

[0440] The impurity 755 is introduced by an ion implantation device, an ion doping device, or a plasma This can be done using a processing device.

[0441] The impurities 755 are, for example, at least one of Group 13 elements or Group 15 elements. When an oxide semiconductor is used for the semiconductor layer 742, one type of element can be used. contains at least one of the following elements as impurities 755: rare gases, hydrogen, and nitrogen. It is also possible to use

[0442] The transistor 831 shown in FIG. 21A2 includes an electrode 723 and an insulating layer 727. The transistor 831 is formed on an insulating layer 772. The electrode 723 has an insulating layer 727 formed thereon. The electrode 723 has The insulating layer 727 can function as a back gate electrode. The insulating layer 727 can function as a conductor. It can be formed more.

[0443] Like transistor 811, transistor 831 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 831 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0444] The transistor 840 illustrated in FIG. 21B1 is a top-gate transistor. The transistor 840 is a semiconductor device after forming the electrodes 744a and 744b. The transistor 830 differs from the transistor 830 in that a dielectric layer 742 is formed. The transistor 841 has an electrode 723 and an insulating layer 727. In the transistor 840 and the transistor 841, the semiconductor layer 74 A portion of the semiconductor layer 742 is formed on the electrode 744a, and another portion of the semiconductor layer 742 is formed on the electrode 744b. It is done.

[0445] Like transistor 811, transistor 841 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 841 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0446] The transistor 842 illustrated in FIG. 22A1 is a top-gate transistor. The transistor 842 is formed by forming an insulating layer 729, and then The transistor 830 and the transistor 840 are different in that the electrode 744 is formed. a and the electrode 744b are semi-insulated in the openings formed in the insulating layer 728 and the insulating layer 729. It is electrically connected to the conductor layer 742 .

[0447] In addition, a portion of the insulating layer 726 that does not overlap the electrode 746 is removed, and the electrode 746 and the remaining insulating layer 726 are separated. Impurities 755 are introduced into the semiconductor layer 742 using the layer 726 as a mask, thereby forming a semiconductor A self-aligned impurity region can be formed in layer 742 ( In the transistor 842, the insulating layer 726 does not extend beyond the edge of the electrode 746. When the impurity 755 is introduced into the semiconductor layer 742, the semiconductor layer 74 The impurity concentration in the region where the impurity 755 is introduced through the insulating layer 726 of the second insulating layer 726 is The area adjacent to the electrode 746 is smaller than the area where the impurity 755 is introduced without passing through the electrode 746. A LDD (Lightly Doped Drain) region is formed in the semiconductor layer 742. is formed.

[0448] The transistor 843 shown in FIG. 22A2 has an electrode 723. 42. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 overlaps with the semiconductor layer 742 with an insulating layer 772 interposed therebetween. It can function.

[0449] In addition, the transistor 844 shown in FIG. 22B1 and the transistor As in the case of the stadium 845, the insulating layer 726 in the area not overlapping with the electrode 746 may be entirely removed. In addition, the transistor 846 shown in FIG. 22C1 and the transistor 847 shown in FIG. Insulating layer 726 may remain, as may stadium 847.

[0450] After forming the electrode 746, the transistors 842 to 847 are also formed with the electrode 74. 6 as a mask, impurities 755 are introduced into the semiconductor layer 742, forming a semiconductor layer 74 According to one aspect of the present invention, an impurity region can be formed in a self-aligned manner in the electric According to one embodiment of the present invention, a transistor having good characteristics can be realized. A highly integrated semiconductor device can be realized.

[0451] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0452] (Embodiment 4) In this embodiment, a display module and an electronic device including a display device according to one embodiment of the present invention will be described. This will be explained with reference to the drawings.

[0453] The display module 8000 shown in FIG. 23 includes an upper cover 8001 and a lower cover 8002. Between them, the touch panel 8004 connected to the FPC 8003, the frame 8009, and the printer The device has a substrate 8010 and a battery 8011.

[0454] A display panel, a touch panel, or a touch panel module according to an embodiment of the present invention is, for example, For example, it can be used for the touch panel 8004.

[0455] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the touch panel 8004. The shape and dimensions can be changed appropriately.

[0456] The touch panel 8004 is a resistive or capacitive touch panel. In addition, the opposing substrate (sealing substrate) of the touch panel 8004 can be used by overlapping it with the It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel of the display 4 to make it into an optical touch panel.

[0457] In addition, when a transmissive or semi-transmissive liquid crystal element is used, the touch panel 8004 and A backlight may be provided between the frames 8009. The backlight has a light source. The light source may be disposed on the backlight, or may be disposed at the end of the backlight. In addition, a light diffusing plate may be used. When using a light-emitting element such as a reflective panel, a backlight is provided. It is also possible to adopt a configuration in which no

[0458] The frame 8009 protects the touch panel 8004 and also supports the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation. The frame 8009 may function as a heat sink.

[0459] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0460] In addition, the touch panel 8004 includes additional components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as such.

[0461] Display panel, light-emitting panel, sensor panel, touch panel, and touch panel according to one embodiment of the present invention Using a module, input device, display device, or input / output device, electronic equipment or lighting equipment A curved surface can be manufactured by using the input device, the display device, or the input / output device of one embodiment of the present invention. In addition, the input device according to one embodiment of the present invention can be manufactured with high reliability. By using the display device or input / output device, flexible and highly reliable electronic devices and lighting devices can be provided. In addition, a touch sensor can be manufactured using the input device or the input / output device of one embodiment of the present invention. It is possible to manufacture electronic devices and lighting devices with improved sensor detection sensitivity.

[0462] Examples of electronic devices include television sets (also known as televisions or television receivers). (hereinafter referred to as "computer monitors"), digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples of the device include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0463] In addition, when the electronic device or lighting device of one embodiment of the present invention is flexible, it can be used in a house or a building. It can also be installed along the curved surfaces of walls or exterior walls, or the interior or exterior of a car. be.

[0464] Further, the electronic device of one embodiment of the present invention may include a secondary battery and may perform non-contact power transmission. It is preferable that the secondary battery can be charged using the same.

[0465] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radio Examples of such batteries include calcium batteries, lead-acid batteries, air batteries, nickel-zinc batteries, and silver-zinc batteries.

[0466] The electronic device according to one embodiment of the present invention may include an antenna. By using the battery, it is possible to display images, information, etc. on the display unit. , the antenna may be used for contactless power transfer.

[0467] 24(A) to 24(H) and 25(A) and (B) are diagrams showing electronic devices. These electronic devices are made up of a housing 5000, a display unit 5001, a speaker 5003, an LED light, 5004, operation keys 5005 (including a power switch or an operation switch), and a connection terminal. 5006, Sensor 5007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions for measuring volume, humidity, gradient, vibration, odor, or infrared rays), microphone 5008, etc.

[0468] FIG. 24(A) shows a mobile computer, which includes, in addition to the above, a switch 5009 , infrared port 5010, etc.

[0469] FIG. 24(B) shows a portable image reproducing device (for example, a DVD reproducing device) equipped with a recording medium. In addition to the above, it has a second display unit 5002, a recording medium reading unit 5011, etc. It is possible.

[0470] FIG. 24(C) shows a television device, which includes a stand 5012 and other components in addition to those described above. The television device can be operated using an operation switch provided in the housing 5000. This can be done by a separate remote control device 5013. The channel and volume can be controlled by the operation keys provided on the display unit 5001. The image displayed on the remote control unit 5013 can be operated. A display unit for displaying information output from the controller 5013 may be provided.

[0471] FIG. 24(D) shows a portable game machine, which includes, in addition to the above, a recording medium reading unit 5011, etc.

[0472] FIG. 24(E) shows a digital camera with a television receiving function. In addition to the above, It may have a taper 5014, a shutter button 5015, an image receiving unit 5016, etc.

[0473] FIG. 24(F) shows a portable gaming machine, which, in addition to the above, has a second display unit 5002, a recorder It may have a medium reading unit 5011, etc.

[0474] FIG. 24(G) shows a portable television receiver, which, in addition to the above, has a function for transmitting and receiving signals. 5017, etc.

[0475] FIG. 24(H) shows a wristwatch-type information terminal, which, in addition to the above, includes a band 5018, a clasp, The housing 5000, which also serves as a bezel, may have a clasp 5019, etc. The display unit 5001 has a non-rectangular display area. icon 5020, other icons 5021, etc. can be displayed.

[0476] Figure 25(A) shows a digital signage. Figure 25(B) shows a digital signage attached to a cylindrical pillar.

[0477] The electronic devices shown in FIGS. 24(A) to 24(H) and 25(A) and (B) are For example, various information (still images, videos, text images, etc.) can be displayed. Functions for displaying information on the display unit, touch panel functions, calendars, dates, or times, etc. function, function to control processing by various software (programs), wireless communication function, The ability to connect to various computer networks using wired communication functions, and wireless communication functions A function to transmit or receive various data via a computer, a program recorded on a recording medium, or The data can be read out and displayed on the display unit. In electronic devices having displays, one display is used primarily to display image information, and another A function that mainly displays text information on one display unit, or a function that displays images with parallax taken into account on multiple displays By displaying the image, it is possible to have a function of displaying a three-dimensional image. In electronic devices having an image unit, the functions of taking still images, taking videos, and taking pictures are available. The function to automatically or manually correct the captured image, and to store the captured image on a recording medium (external or internal to the camera) The image capturing device may have a function of storing the captured image in a memory (such as a memory), a function of displaying the captured image on a display unit, etc. Note that the electronic devices shown in FIGS. 24(A) to 24(H) and FIGS. 25(A) and 25(B) have The functions that can be implemented are not limited to these, and various other functions can be implemented.

[0478] 26(A), (B), (C1), (C2), (D), and (E) show a curved display unit 70. 7 shows an example of an electronic device having the display unit 7000. The display surface of the display unit 7000 is curved. The display can be performed along a curved display surface. The display unit 7000 has flexibility. It may be possible.

[0479] The display unit 7000 may be a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like according to one embodiment of the present invention. The present invention is also applicable to a display device, a touch panel, a display unit, an input / output unit, or the like. In this manner, it is possible to provide an electronic device that has a curved display portion and is highly reliable.

[0480] An example of a mobile phone is shown in FIG. 26A. A mobile phone 7100 includes a housing 7101, a display 7000, operation button 7103, external connection port 7104, speaker 7105, microphone 7106 etc.

[0481] A mobile phone 7100 shown in FIG. 26A includes a touch sensor in a display portion 7000. The touch sensor 7100 shown in FIG. All operations such as making a phone call or entering text can be done with a finger or a stylus. This can be done by touching part 7000.

[0482] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0483] FIG. 26B shows an example of a television device. The television device 7200 has a housing 7 A display unit 7000 is built into the housing 201. This shows the configuration that supported 201.

[0484] The television device 7200 shown in FIG. 26B is operated by an operation switch provided in the housing 7201. This can be done by a separate remote control 7211 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7211 may display information to be output from the remote control unit 7211. The remote control 7211 may have an operation key or a touch panel. The panel allows the user to operate the channel and volume, and the display unit 7000 displays You can manipulate the video.

[0485] The television device 7200 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts by wired or wireless connection via a modem. By connecting to a communication network, one-way (sender to receiver) or two-way It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0486] Examples of portable information terminals are shown in Fig. 26(C1), (C2), (D), and (E). The terminal has a housing 7301 and a display unit 7000. The display unit 7000 may include a display, a speaker, a microphone, an antenna, a battery, etc. The mobile information terminal is operated by touching the display unit 700 with a finger or a stylus. This can be done by touching 0.

[0487] FIG. 26C1 is a perspective view of a portable information terminal 7300, and FIG. 26C2 is a perspective view of a portable information terminal 7300. 26(D) is a perspective view of a mobile information terminal 7310. FIG. FIG. 26E is a perspective view of the portable information terminal 7320.

[0488] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, the device can be used as a smartphone. The portable information terminal exemplified in this embodiment may be, for example, a mobile phone, an electronic mail, or the like. It can be used for a variety of purposes, including browsing and writing documents, playing music, communicating on the Internet, and playing computer games. Various applications can be executed.

[0489] The mobile information terminal 7300, the mobile information terminal 7310, and the mobile information terminal 7320 are Image information can be displayed on multiple surfaces. For example, the As shown in FIG. 7, three operation buttons 7302 are displayed on one side, and information 7303 shown as a rectangle is displayed on the other side. In Fig. 26(C1) and (C2), information is displayed on the upper side of the mobile information terminal. FIG. 26(D) shows an example in which information is displayed on the side of the mobile information terminal. Also, information may be displayed on three or more sides of a mobile information terminal. In FIG. 26(E), information 7 304, information 7305, and information 7306 are displayed on different surfaces.

[0490] An example of such information is notifications from social networking services (SNS). , display notifying you of incoming e-mails or telephone calls, subject of e-mails or sender name , date and time, time, battery level, antenna reception strength, etc. Or, the information is displayed Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0491] For example, the user of the portable information terminal 7300 may carry the portable information terminal 7300 in a breast pocket of a garment. When the item is stored, the display (information 7303 in this example) can be confirmed.

[0492] Specifically, the telephone number or name of the caller of the incoming call is recorded on the mobile information terminal 7300. The display is placed in a position that can be observed from above. The user takes the mobile information terminal 7300 out of his / her pocket. You can check the display and decide whether or not to answer the call without having to take out your phone.

[0493] 26(F) to (H) show an example of an illumination device having a curved light-emitting portion.

[0494] The light-emitting portion of each of the lighting devices shown in FIG. 26(F) to (H) is a functional panel according to one embodiment of the present invention. display panel, light-emitting panel, sensor panel, touch panel, display device, or input / output device According to one aspect of the present invention, a curved light emitting portion is provided, and the curved light emitting portion is provided with high reliability. It is possible to provide high-quality lighting equipment.

[0495] The lighting device 7400 shown in FIG. 26(F) includes a light-emitting unit 7402 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0496] The light-emitting portion 7412 of the lighting device 7410 shown in FIG. The light emitting parts are arranged symmetrically. It can illuminate in all directions.

[0497] The lighting device 7420 shown in FIG. 26(H) has a light-emitting portion 7422 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7422 is focused on the front surface of the lighting device 7420. This type of lighting is suitable for illuminating a certain area. This has the effect of making it difficult to

[0498] In addition, the lighting devices 7400, 7410, and 7420 each have light-emitting The light emitting part may be flexible. The light emitting part may be fixed by a member such as a plastic member or a movable frame. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0499] The lighting device 7400, the lighting device 7410, and the lighting device 7420 each have an operation switch. The light emitting device has a base 7401 having a switch 7403 and a light emitting unit supported by the base 7401 .

[0500] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing may be fixed to the ceiling or hung from the ceiling. The light surface can be curved, so a specific area can be brightened by curving the light-emitting surface in a concave shape. The light can be curved convexly to illuminate an entire room.

[0501] 27(A1), (A2), (B) to (I) show a display device having a flexible display unit 7001. 1 shows an example of a portable information terminal.

[0502] The display unit 7001 may be a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like, according to one embodiment of the present invention. The device is manufactured using a panel, a touch panel, a display device, an input / output device, etc. For example, the curvature Display devices or input / output devices that can be bent with a radius of 0.01 mm to 150 mm The display unit 7001 may be provided with a touch sensor, and the display may be touched by a finger or the like. The mobile information terminal can be operated by touching the portion 7001. Thus, it is possible to provide an electronic device having a flexible display portion and high reliability.

[0503] FIG. 27(A1) is a perspective view showing an example of a portable information terminal, and FIG. 27(A2) is a perspective view showing an example of a portable information terminal. A side view showing an example of an information terminal. The mobile information terminal 7500 includes a housing 7501, a display unit 7 001, a drawer member 7502, an operation button 7503, etc.

[0504] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. It has 7001.

[0505] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The image can be displayed on the display unit 7001. The battery is built in. Also, the housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be directly supplied from the outside via wires.

[0506] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in Fig. 27 (A1), (A2), and (B), a mobile information terminal In the example shown, the operation buttons 7503 are arranged on the side of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface of the terminal 7500, or on the back surface.

[0507] FIG. 27B shows a mobile phone with the display unit 7001 pulled out by a pull-out member 7502. 7 shows a portable information terminal 7500. In this state, an image can be displayed on the display unit 7001. 27(A1) in which a part of the display unit 7001 is rolled up, and the state of the display unit 700 27(B) in which the portable information terminal 751 is pulled out by the pull-out member 7502. For example, in the state shown in FIG. 27(A1), the display By hiding the rolled-up portion of the display unit 7001, the mobile information terminal 7500 Power consumption can be reduced.

[0508] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001 in place, a reinforcing frame may be provided on the side of the display unit 7001 .

[0509] In addition to this configuration, a speaker is provided on the housing, and the sound signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0510] 27(C) to (E) show an example of a foldable portable information terminal. In the unfolded state, in Figure 27(D), the unfolded state or the folded state In the other state, which is in the process of changing to the other state, the portable information terminal 760 in the folded state in FIG. 27(E) The portable information terminal 7600 is highly portable when folded and can be folded up to 100 mm in length. The large, seamless display area provides excellent visibility.

[0511] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0512] An example of a foldable portable information terminal is shown in Figures 27(F) and 27(G). In FIG. 27(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 7001 faces outward. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can reduce dirt and scratches.

[0513] FIG. 27H shows an example of a flexible portable information terminal. The device has a housing 7701 and a display unit 7001. , 7703b, speakers 7704a, 7704b as audio output means, and an external connection port 7 The portable information terminal 7700 may have a display 705, a microphone 7706, and the like. The battery 7709 may be mounted on the display unit 7 It may be placed overlapping with 001.

[0514] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape or twisted. For example, the portable information terminal 7700 has a display unit 7001 on the inside or The mobile information terminal 7700 can be folded so that the front and rear panels face outward. The display unit 700 may be wound up in a roll. Since the portable information terminal 7700 can freely deform, even if it is dropped or has the advantage that it is less likely to be damaged even if an unintended external force is applied.

[0515] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Or, the housing 7701 can be fixed to the wall with a magnet or the like. , and can be conveniently used in a variety of situations.

[0516] FIG. 27(I) shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. It may be placed overlapping with band 01 or band 7801.

[0517] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0518] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0519] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0520] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0521] The portable information terminal 7800 may also have an input / output terminal 7802. If the terminal has a 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal shown in the example is performed by non-contact power transmission without going through the input / output terminal. You may go.

[0522] Figures 28(A), (B), and (C) show an example of a foldable wristwatch-type portable information terminal. The mobile information terminal 7900 includes a display unit 7901, a housing 7902, a housing 7903, a band 79 04, operation buttons 7905, etc.

[0523] As shown in FIG. 28A, the portable information terminal 7900 has a housing 7902 on a housing 7903. By lifting the housing 7902 from the stacked state as shown in FIG. As shown in FIG. 28C, the display portion 7901 can be reversibly transformed into an expanded state. Therefore, the portable information terminal 7900 can be used with the display portion 7901 folded. It can be used in the normal state, and the display area can be expanded by unfolding the display section 7901. can be used.

[0524] In addition, the display portion 7901 has a function as a touch panel. The mobile information terminal 7900 can be operated by touching the operation button 7905. By pushing, rotating, or sliding it up and down, toward you, or toward the depth of the screen, The portable information terminal 7900 can be operated.

[0525] As shown in FIG. 28A, when the housing 7902 and the housing 7903 are overlapped with each other, It is preferable to have a locking mechanism so that the body 7902 and the housing 7903 do not come apart unintentionally. At this time, the locked state can be released by, for example, pressing the operation button 7905. It is preferable to use a spring or other such restoring force to release the locked state. When the image is removed, the state shown in FIG. 28(A) is automatically transformed into the state shown in FIG. 28(C). Alternatively, a magnet may be used instead of the lock mechanism to secure the housing 7902 and the housing The relative positions of the housing 7902 and the housing 7903 may be fixed by using a magnet. The body 7903 can be detached.

[0526] In FIG. 28(A), (B), and (C), the bending direction of the band 7904 is approximately perpendicular to the bending direction of the band 7904. 28(D) and (E), the display unit 7901 can be opened in the direction shown in FIG. The display unit 7901 can be unfolded in a direction approximately parallel to the bending direction of the band 7904. In this case, the display portion 7901 may be curved so as to be wrapped around the band 7904. It may also be used in combination.

[0527] The electronic device described in this embodiment has a display unit for displaying some information. The display unit is characterized in that the display panel, the touch panel, or the like according to one embodiment of the present invention is used. A display device such as a touch panel module can be applied.

[0528] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. EXAMPLES

[0529] The following describes the results of fabricating a display device according to one embodiment of the present invention and observing its cross section. The cross-sectional structure of the display device manufactured in this example can be seen in FIG.

[0530] [Production of display device] First, a transistor, a wiring connected to the transistor, and the like were formed over a glass substrate. Transistors (transistor 201, transistor 202, transistor 205, etc.) In this study, we developed a bottom-gate transistor that uses an oxide semiconductor as the semiconductor in which the channel is formed. In this embodiment, the oxide semiconductor is a semiconductor having a c-axis oriented in the direction perpendicular to the film surface. C-Axis Aligned Crystalline Oxide Semiconductor (CAAC-OS) stalline-oxide semiconductor) was used.

[0531] CAAC-OS is a crystalline oxide semiconductor whose c-axis is aligned approximately perpendicular to the film surface. Another type of crystal structure for oxide semiconductors is a nanoscale microcrystal aggregate. It has been discovered that there are a variety of structures that are different from single crystals, such as nano-crystals (nc). It has been confirmed that CAAC-OS has lower crystallinity than single crystals and higher crystallinity than nc. CAAC-OS has the characteristic that no grain boundaries are observed, so it can be stably applied over a large area. It is possible to form a uniform film without any trouble, and the response when a flexible light-emitting device is bent is also reduced. The CAAC-OS film is less likely to crack due to force.

[0532] In this example, an In--Ga--Zn-based oxide was used as the oxide semiconductor material.

[0533] Next, a first electrode functioning as a pixel electrode is formed on the insulating layer covering the transistors and wiring. The first electrode was formed using a laminated structure of a titanium film, an aluminum film, and a titanium film. Next, an insulating layer was formed to cover the end of the first electrode. A photosensitive polyimide having a thickness of 100 nm was used. Then, a structure was formed on the insulating layer. A photosensitive polyimide film with a thickness of about 1.25 μm was used.

[0534] Subsequently, the EL layer and the second electrode were formed by evaporation to form a light emitting element. Here, the EL layer and the second electrode were formed over the entire display area without using a metal mask. .

[0535] In addition, a light-shielding layer was formed on a glass substrate different from the above. A black matrix of 0.6 μm was used. Next, a red colored layer (R), a green colored layer ( The thickness of each layer was about 2 times that of the colored layer (R). 0 μm, colored layer (G) was approximately 1.5 μm, and colored layer (B) was approximately 1.5 μm.

[0536] Next, the two glass substrates were bonded together with an adhesive, and the adhesive was cured. The adhesive was a thermosetting epoxy resin. The substrates were bonded together under reduced pressure.

[0537] The display device manufactured in this embodiment was made to display white in the entire display area, and the display surface was The specimen was visually observed from the vertical and oblique directions. As a result, even when viewed from an oblique direction, It was confirmed that the change in chromaticity and luminance was extremely small.

[0538] [Cross-section observation results] The display device was processed by ion milling and its cross section was observed under a scanning electron microscope (SEM). Observation was performed using a Scanning Electron Microscope (EM).

[0539] The observed cross-sectional images are shown in Figure 29(A) and (B). Figure 29(A) and (B) are the same cross-sectional images. For clarity, FIG. 29(B) shows the contours of each layer in FIG. 29(A) by dashed lines. It is.

[0540] In addition, in Figures 29(A) and (B), cavities are seen in parts of the EL layer, but these are This was formed during processing for observation.

[0541] Two structures are shown in Figure 29(A) and (B). The structure on the left has a colored layer (R) and The structure on the right is located between colored layer (B), and the structure on the right is located between colored layer (R) and colored layer (G). In addition, each of the structures has a portion that is provided at a position higher than the lower surface of the colored layer (R). It was confirmed that this was the case.

[0542] In the manufactured display device, the distance (high) between the first electrode and the colored layer (R) at the opening of the insulating layer is It was confirmed that the opening in the insulating layer had a region where the thickness difference was about 1.0 μm. It was confirmed that the distance between the second electrode and the colored layer (R) was about 0.7 μm in the region. In addition, in the opening of the insulating layer, the distance between the first electrode and the light-shielding layer is about 2.8 μm. It was also confirmed that the insulating layer had a gap between the second electrode and the light-shielding layer. It was confirmed that the area had a thickness of about 2.5 μm.

[0543] It is also confirmed that the display device has an area where the distance between the structure and the light-shielding layer is about 1.5 μm. It was also confirmed that the distance between the second electrode and the light-shielding layer on the structure was approximately 1.2 μm. was confirmed.

[0544] In addition, the taper angle of the structure (the angle between the bottom and side of the structure) is in the range of about 45 degrees to 70 degrees. In addition, a part of the EL layer covering the structure was tapered to a thickness of 1 mm. It was confirmed that the thickness was thinner than the thickness of the film.

[0545] From the above, it is clear that the distance between the pair of substrates in the display device fabricated in this embodiment is extremely small. It was also confirmed by visual observation that the viewing angle characteristics had been improved. .

[0546] The above is a description of this embodiment. [Explanation of symbols]

[0547] 10 Display device 11 Structure 11a part 12 Structure 21 Substrate 23 Conductive layer 24 EL layer 24a EL layer 24b EL layer 25 Conductive Layer 31 Substrate 32 Display section 34 Circuit 35 Wiring 39 Adhesive layer 40 Light emitting element 42 FPC 43 IC 51a Colored layer 51b Colored layer 51c colored layer 52 Light blocking layer 60 Liquid crystal element 61 Conductive layer 62 Liquid crystal 63 Conductive Layer 64 Insulating Layer 65 Insulating Layer 70 Transistor 71 Conductive layer 72 Semiconductor layer 73 Insulating Layer 74a Conductive layer 74b Conductive layer 81 Insulating layer 81a Insulating layer 81b Insulating layer 81c Insulating layer 82 Insulating layer 82a part 90 Transistor 91 Single crystal substrate 95a Connection Layer 95b Connection Layer 96 Conductive Layer 100 Touch Panel 111 Conductive layer 112 EL layer 113 Conductive Layer 130 Polarizing Plate 131 Colored layer 131a Colored layer 131b Colored layer 132 Light blocking layer 133 Light blocking layer 134 Colored layer 141 Adhesive layer 142 Adhesive layer 146 Conductive Film 147 Conductive Film 148 Conductive Film 149 Nanowires 150 Input Device 151 Electrode 152 Electrode 153 Bridge Electrode 155 Wiring 156 Wiring 157 FPC 158 IC 160 Substrate 161 Insulating Layer 162 Insulating Layer 163 Insulating Layer 164 Insulating Layer 165 Adhesive layer 168 IC 169 Connection 170 Substrate 171 Substrate 172 Adhesive layer 173 Insulating Layer 181 Substrate 182 Adhesive layer 183 Insulating Layer 191 Conductive Layer 192 Conductive Layer 193 Liquid Crystal 194 Conductive Layer 195 Insulating Layer 200 Display device 201 Transistor 202 Transistor 203 Capacitive element 204 Terminal section 205 Transistor 206 Transistor 207 Terminal section 210 pixels 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 220 Insulating layer 221 Conductive Layer 222 Conductive Layer 223 Conductive Layer 224 Conductive Layer 231 Semiconductor Layer 242 Connection Layer 243 Connectors 251 Aperture 252 Connection 601 Pulse voltage output circuit 602 Current detection circuit 603 capacity 621 Electrode 622 Electrode 705 Insulation Layer 706 Electrode 707 Insulation Layer 708 Semiconductor Layer 710 Insulating layer 711 Insulating layer 714 Electrode 715 Electrode 722 Insulating layer 723 Electrode 726 Insulating Layer 727 Insulation Layer 728 Insulating Layer 729 Insulation Layer 741 Insulation Layer 742 Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 Circuit Board 772 Insulation Layer 810 Transistor 811 Transistor 820 Transistor 821 Transistor 825 Transistor 826 Transistor 830 Transistor 831 Transistor 840 Transistor 841 Transistor 842 Transistor 843 Transistor 844 Transistor 845 Transistor 846 Transistor 847 Transistor 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Stand 5013 Remote control device 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Band 5019 Clasp 5020 Icon 5021 Icon 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7200 Television Equipment 7201 Case 7203 Stand 7211 Remote control device 7300 Mobile Information Terminal 7301 Case 7302 Operation button 7303 Information 7304 Information 7305 Information 7306 Information 7310 Mobile Information Terminals 7320 Mobile Information Terminal 7400 Lighting Equipment 7401 Daibu 7402 Light emitting part 7403 Operation switch 7410 Lighting equipment 7412 Light emitting part 7420 Lighting equipment 7422 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Portable Information Terminal 7901 Display section 7902 Case 7903 Case 7904 Band 7905 Operation button 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. A display device comprising: a display unit; and a scanning line driving circuit disposed adjacent to the display unit and aligned along a first direction, the scanning line driving circuit being disposed on a single substrate; the display unit includes a plurality of pixels, a first colored layer having a shape extending in the first direction, a second colored layer having a shape extending in the first direction, a plurality of first structures having a shape extending in the first direction, and a plurality of second structures having a shape extending in a second direction intersecting the first direction; Each of the plurality of pixels includes a transistor and a liquid crystal element electrically connected to the transistor, a first conductive layer having a function as a first electrode of the liquid crystal element overlaps with a second conductive layer having a function as a second electrode of the liquid crystal element via an insulating layer; the first conductive layer has a shape extending in the first direction, a width of the first structure in the first direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; a width of the second structure in the second direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; one of the plurality of first structures overlaps with a third conductive layer having a function as a gate of the transistor included in one pixel of the plurality of pixels; the first structure overlaps with a semiconductor layer having a channel formation region of the transistor included in the pixel, the first structures and the second structures are arranged at intervals from each other in a plan view, the first structure overlaps with a region between the first colored layer and the second colored layer in a plan view, a first pixel and a second pixel of the plurality of pixels correspond to the same color and are arranged side by side in the first direction so as to be adjacent to each other; one second structure of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel; LCD display device.

2. A display device comprising: a display unit; and a scanning line driving circuit disposed adjacent to the display unit and aligned along a first direction, the scanning line driving circuit being disposed on a single substrate; the display unit includes a plurality of pixels, a first colored layer having a shape extending in the first direction, a second colored layer having a shape extending in the first direction, a plurality of first structures having a shape extending in the first direction, and a plurality of second structures having a shape extending in a second direction intersecting the first direction; Each of the plurality of pixels includes a transistor and a liquid crystal element electrically connected to the transistor, a first conductive layer having a function as a pixel electrode of the liquid crystal element overlaps with a second conductive layer having a function as a common electrode of the liquid crystal element via an insulating layer; the first conductive layer has a shape extending in the first direction, a width of the first structure in the first direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; a width of the second structure in the second direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; one of the plurality of first structures overlaps with a third conductive layer having a function as a gate of the transistor included in one pixel of the plurality of pixels; the first structure overlaps with a semiconductor layer having a channel formation region of the transistor included in the pixel, the first structures and the second structures are arranged at intervals from each other in a plan view, the first structure overlaps with a region between the first colored layer and the second colored layer in a plan view, a first pixel and a second pixel of the plurality of pixels correspond to the same color and are arranged side by side in the first direction so as to be adjacent to each other; one second structure of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel; LCD display device.

3. A display device comprising: a display unit; and a scanning line driving circuit disposed adjacent to the display unit and aligned along a first direction, the scanning line driving circuit being disposed on a single substrate; the display unit includes a plurality of pixels, a first colored layer having a shape extending in the first direction, a second colored layer having a shape extending in the first direction, a plurality of first structures having a shape extending in the first direction, and a plurality of second structures having a shape extending in a second direction intersecting the first direction; Each of the plurality of pixels includes a transistor and a liquid crystal element electrically connected to the transistor, a first conductive layer having a function as a first electrode of the liquid crystal element overlaps with a second conductive layer having a function as a second electrode of the liquid crystal element via an insulating layer; the first conductive layer has a shape extending in the first direction, a width of the first structure in the first direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; a width of the second structure in the second direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; the plurality of first structures and the plurality of second structures are disposed above the second conductive layer; one of the plurality of first structures overlaps with a third conductive layer having a function as a gate of the transistor included in one pixel of the plurality of pixels; the first structure overlaps with a semiconductor layer having a channel formation region of the transistor included in the pixel, the first structures and the second structures are arranged at intervals from each other in a plan view, the first structure overlaps with a region between the first colored layer and the second colored layer in a plan view, a first pixel and a second pixel of the plurality of pixels correspond to the same color and are arranged side by side in the first direction so as to be adjacent to each other; one second structure of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel; LCD display device.

4. A display device comprising: a display unit; and a scanning line driving circuit disposed adjacent to the display unit and aligned along a first direction, the scanning line driving circuit being disposed on a single substrate; the display unit includes a plurality of pixels, a first colored layer having a shape extending in the first direction, a second colored layer having a shape extending in the first direction, a plurality of first structures having a shape extending in the first direction, and a plurality of second structures having a shape extending in a second direction intersecting the first direction; Each of the plurality of pixels includes a transistor and a liquid crystal element electrically connected to the transistor, a first conductive layer having a function as a pixel electrode of the liquid crystal element overlaps with a second conductive layer having a function as a common electrode of the liquid crystal element via an insulating layer; the first conductive layer has a shape extending in the first direction, a width of the first structure in the first direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; a width of the second structure in the second direction is greater than a width of the first conductive layer in a cross-sectional view in the second direction; the plurality of first structures and the plurality of second structures are disposed above the second conductive layer; one of the plurality of first structures overlaps with a third conductive layer having a function as a gate of the transistor included in one pixel of the plurality of pixels; the first structure overlaps with a semiconductor layer having a channel formation region of the transistor included in the pixel, the first structures and the second structures are arranged at intervals from each other in a plan view, the first structure overlaps with a region between the first colored layer and the second colored layer in a plan view, a first pixel and a second pixel of the plurality of pixels correspond to the same color and are arranged side by side in the first direction so as to be adjacent to each other; one second structure of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel; LCD display device.

Images