Optical sensors and detectors for optical detection

Abstract

The present invention relates to an optical sensor, a detector comprising an optical sensor for the optical detection of at least one object. [Solution] The optical sensor (110) includes at least one layer (112) of photoconductive material (114), at least two individual electrical contacts (136, 136') in contact with the layer (112) of photoconductive material (114), and a cover layer (116) deposited on the layer (112) of photoconductive material (114) and being an amorphous layer containing at least one metal-containing compound (120). The optical sensor 110 can be supplied in a compact, airtight package that still provides a high degree of protection against potential degradation due to moisture and / or oxygen. Additionally, the cover layer 116 can activate the photoconductive material 114, thereby improving the performance of the optical sensor 110. Additionally, the optical sensor 110 can be easily manufactured and integrated onto a circuit carrier device.

Description

[Technical field]

[0001] The present invention relates to an optical sensor and a detector comprising an optical sensor for optical radiation, in particular for optical radiation in particular in the infrared spectral range, in particular for sensing at least one of the transmittance, absorptance, emissivity and reflectance of at least one object, in particular for determining the position of at least one object, in particular for determining the position of the object with respect to the depth or both the depth and width of at least one object. Furthermore, the present invention relates to human-machine interfaces, entertainment devices, scanning systems, tracking systems, stereoscopic devices and cameras. Furthermore, the present invention relates to a method for manufacturing an optical sensor and various uses of the optical sensor and detector. Such devices, methods and uses can be employed in various fields of, for example, daily life, games, traffic technology, spatial mapping, manufacturing technology, security technology, medical technology or in scientific fields. However, further applications are also possible. [Background technology]

[0002] Various detectors for optically detecting at least one object are known, which are based on optical sensors. WO 2012 / 110924 A1 discloses a detector comprising at least one optical sensor, which optical sensor shows at least one sensor area. Here, the optical sensor is designed to generate at least one sensor signal in dependence on the illumination of the sensor area. According to the so-called "FiP effect", the sensor signal depends on the geometry of the illumination, in particular on the beam cross section of the illumination on the sensor area, if the total power of the illumination is the same. The detector furthermore has at least one evaluation device designed to generate at least one geometrical piece of information from the sensor signal, in particular at least one geometrical piece of information relating to the illumination and / or the object.

[0003] WO2014 / 097181A1 discloses a method and a detector for determining the position of at least one object by using at least one lateral light sensor and at least one longitudinal light sensor. Preferably, a stack of longitudinal light sensors is used to determine with high accuracy and without ambiguity, in particular the longitudinal position of the object. Furthermore, WO2014 / 097181A1 discloses a human-machine interface, an entertainment device, a tracking system, and a camera, each of which comprises at least one such detector for determining the position of at least one object.

[0004] International patent application PCT / EP2016 / 051817, filed on 28 January 2016, the entire contents of which are incorporated herein by reference, discloses further types of materials suitable as longitudinal light sensors, where the sensor area of ​​the longitudinal light sensor comprises a photoconductive material, the electrical conductivity in the photoconductive material being dependent on the beam cross section of the light beam in the sensor area for the same total illumination power, and thus the longitudinal sensor signal is dependent on the electrical conductivity of the photoconductive material.

[0005] Preferably, the photoconductive material is selected from lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), cadmium telluride (CdTe), indium phosphide (InP), cadmium sulfide (CdS), cadmium selenide (CdSe), indium antimonide (InSb), mercury cadmium telluride (HgCdTe; MCT), copper indium sulfide (CIS), copper indium gallium selenide (CIGS), zinc sulfide (ZnS), zinc selenide (ZnSe), or copper zinc tin sulfide (CZTS). Furthermore, Those Solid solutions and / or Doped variants of themFurther disclosed is a lateral optical sensor having a sensor area, where the sensor area includes a layer of photoconductive material preferentially embedded between two transparent conductive oxide layers and at least two electrodes. Preferably, at least one of the electrodes is a split electrode having at least two partial electrodes, and a lateral sensor signal provided by the partial electrodes is indicative of an x-position and / or a y-position of an incident light beam within the sensor area.

[0006] "Preparation of lead sulfide thin films by the atomic layer epitaxy process" by M Leskelae, L Niinistoe, P Niemela, E Nykaenen, P Soininen, M Tiitta and J Vaehaekangas investigates the preparation of lead sulfide thin films on different substrates by atomic layer deposition (ALD). The sulfur source was H 2 S, but tested the following compounds as lead sources: bromide, iodide and acetate as well as THD (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. Growth experiments were performed at 300-350 °C and film thicknesses varied between 0.1 and 1 μm. Results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and carrier concentrations and mobilities were comparable to those found in films deposited by conventional chemical methods.

[0007] NP Dasgupta, SP Walch and FB Prinz, “Fabrication and characterization of lead sulfide thin films by atomic layer deposition”, ECS Transactions 16 (4), pp. 29-36, 2008, presents a study on the deposition of lead sulfide (PbS) thin films by ALD. Lead sulfide (PbS) films were prepared by the deposition of Pb(tmhd) at precursor sublimation temperatures of 165-175 °C. 2 and H2 The films were deposited from a S precursor. The film growth rates were 0.13–0.18 nm / cycle, higher than previously published values. A linear growth rate characteristic of ALD was observed without chemical contamination. AFM images showed that the films were polycrystalline and the grain size increased with film thickness.

[0008] N.P. Dasgupta, J.F. Mack, M.Langston, Al Bousetta and F.B. Prinz, “Design of an atomic layer deposition reactor for hydrogen sulfide compatibility”, Rev. Sc. Instrum 81, 044102, 2010, describes the compatibility of hydrogen sulfide (H 2 S) describes a customized ALD reactor designed with chemistry-compatible components. 2 S is used as a reactant for the ALD of metal sulfides. H in the ALD reactor 2 The use of S requires special attention to safety issues due to its highly toxic, flammable, and corrosive nature. The reactor is equipped with H2O2-free reactors for all wetted components. 2 Designed for material compatibility with S. A customized safety interlock system was developed to shut down the system in the event of a toxic gas leak, power outage, loss of building ventilation, or compressed air pressure. H, which can also detect chemical contamination. 2 ALD of lead sulfide (PbS) and zinc sulfide (ZnS) without any release of S was demonstrated.

[0009] J. Xu, BR Sutherland, S. Hoogland, F. Fan, S. Kinge and EH Sargent, “Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photo-sensing”, Appl. Phys. Lett.107, 153105, 2015, reports that ALD, enjoying high-quality thin film formation in the absence of high temperature or high vacuum, has become the industry standard for large-area deposition of a wide array of oxide materials. Recently, its potential in the formation of nanocrystalline sulfide films has been shown. Here, we show the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we show that zinc oxide nanowire electrodes can be used to enhance absorption without compromising extraction efficiency in the absorbing layer. The nanowires are first coated with a thin anti-shunt titanium oxide layer, followed by an infrared-active ALD PbS layer for photodetection.

[0010] In particular, to avoid degradation of the photoconductive material due to external influences such as moisture and / or oxygen, the light sensor comprising the photoconductive material may be at least partially covered with an encapsulation layer. For this purpose, the encapsulation layer is typically brought about by using an encapsulation adhesive, usually an epoxy-based adhesive, and / or an encapsulation glass. Additionally or alternatively, the light sensor may be encapsulated in a hermetically sealed container. However, the encapsulation glass and the encapsulation adhesive are preferably selected with respect to their absorption properties over the wavelength range that may be relevant for sensing by the photoconductive material. Here, borosilicate glass and quartz glass are known to absorb at wavelengths above about 2500 nm, which may considerably limit the spectral response of the photoconductive material, in particular lead sulfide (PbS) and lead selenide (PbSe). Other encapsulation glasses, such as sapphire, may offer more suitable absorption properties, but usually tend to be rather expensive. Furthermore, the hermetic containers are generally rather bulky and prove difficult and expensive to integrate on a printed circuit board.

[0011] G.H. Blount, K. Preis, R.T. Yamada and R.H. Bube, "Photoconductive properties of chemically deposited PbS with dielectric overcoatings", J. Appl. Phys. 46, 3489, 1975, describes the photoconductive properties of vacuum-deposited alumina (Al 2 O 3 ), arsenic trisulfide (As 2 S 3 ), Cadmium Telluride (CdTe), Magnesium Fluoride (MgF 2 ), silicon monoxide (SiO), and silicon dioxide (SiO 2 The thickness of the overcoat is approximately equal to the thickness required to optimize the anti-reflection properties. 2 O 3 ), Magnesium Fluoride (MgF 2 ), and cadmium telluride (CdTe) had low manufacturing yields, but none of the protective films significantly degraded the detector properties. The low yields are apparently due to the physical incompatibility of the protective film with the lead sulfide (PbS) film. The reduction of 1 / f noise and passivation to hostile environments resulted in the use of arsenic trisulfide (As 2 S 3 ) has improved detector performance.

[0012] MD Groner, FH Fabreguette, JW E Lam, and S M George, “Low-Temperature Al 2 O 3 Atomic Layer Deposition”, Chem. Mater. 16, pp. 639-645, 2004. 3 ) 3 Alumina (Al) deposited by ALD at temperatures as low as 33 °C in a viscous flow reactor using alternating exposures of (trimethylaluminum, TMA) and water. 2 O 3 ) membranes. 2 O 3ALD films have the potential to coat thermally sensitive substrates such as organic, polymeric, or biological materials. 2 O 3 The film density was lower at lower deposition temperatures. 2 O 3 ALD film density is 3.0 g / cm at 177°C. 3 , 2.5 g / cm at 33°C 3 The AFM images show that the low-temperature grown Al 2 O 3 The ALD films showed very smooth, with a root-mean-square (RMS) roughness of only 0.4 ± 0.1 nm. Elemental analysis of the films using forward recoil spectroscopy revealed an increasing hydrogen concentration with decreasing growth temperature. Except for the original aluminum and oxygen concentrations, no other elements were observed by Rutherford backscattering spectroscopy. Low-temperature Al at 58 °C on poly(ethylene terephthalate) (PET) polymer substrates 2 O 3 ALD was demonstrated for the first time.

[0013] US 5,291,066A discloses a moisture-resistant integrated circuit module including at least one integrated circuit component in a high density interconnect (HDI) structure manufactured by applying a continuous multi-ply sequence having a plurality of via holes to a substrate. The sequences cover the components and the module substrate, each sequence including a dielectric film and a plurality of lands of metal that extend into the vias of the sequence to make electrical interconnections. The module includes at least one moisture barrier film for preventing moisture from penetrating through the module to the circuit components.

[0014] US 7,939,932 B2 describes low temperature inorganic dielectric ALD films (e.g., alumina (Al 2 O 3 ) and titanium dioxide (TiO 2) discloses a method for fabricating a packaged chip device using low-temperature ALD films. Such low-temperature ALD films can generally be deposited without damaging the packaged chip device. The ALD films are typically deposited to a thickness sufficient to provide the desired qualities (e.g., hermeticity of the entire packaged chip device, passivation of electrical contacts, biocompatibility, etc.) and still allow electrical connections (e.g., by soldering or otherwise) to the electrical contacts directly through the ALD film without the need to expose the electrical contacts.

[0015] W. Yoon, A. R. Smith, E. F. Oos, J. E. Boercker, W. B. Heuer and J. G. Tischler, “Electrical Measurement Under Atmospheric Conditions of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al 2 O 3 ”, IEEE Transaction Nanotech. 12(2), pp. 146-151, 2013, reported that lead selenide (PbSe) nanocrystal thin-film transistors (TFTs) can be fabricated at 150°C using alumina (Al 2 O 3 reported that alumina (Al) films were passivated using remote plasma ALD. By using a highly reactive remote oxygen plasma source, the time for one complete ALD cycle was about 15 seconds with a growth rate of about 0.11 nm / cycle. 2 O 3 ) Effective mobilities measured under air conditions from passivated PbSe nanocrystal TFTs are comparable to those previously reported for air-free lead selenide (PbSe) nanocrystal TFTs, and are consistent with those reported for ALD Al 2 O 3 The results indicate that the passivated layer prevents the oxidation and degradation of the nanocrystalline film due to air exposure. The variation in effective mobility of the passivated devices was found to be negligible under ambient conditions over a period of 30 days. The results show that the alumina (Al 2 O 3We show that remote plasma ALD processing of ) can produce effective passivation layers on air-sensitive nanocrystals at low temperatures and high deposition rates.

[0016] C. Hu, A. Gassenq, Y. Justo, K. Devloo-Casier, H. Chen, C. Detavernier, Z. Hens and G. Roelkens, “Air-stable short-wave infrared PbS colloidal quantum dot photoconductors passivated with Al 2 O 3 "Atomic layer deposition", Appl. Phys. Lett. 105, 171110, 2014, is a paper on the development of Al for air-stable operation. 2 O 3 We show PbS colloidal quantum dot photoconductors with ALD passivation. Two different types of inorganic ligands for quantum dots, S 2- and O.H. - PbS / S with cutoff wavelength up to 2.4 lm has been investigated. 2- Photoconductors have been obtained with reported responsivities up to 50 A / W at 1550 nm.

[0017] Y. Liu, M. Gibbs, CL Perkins, J. Tolentino, MH Zarghami, J. Bustamante Jr. and M. Law, Robust, “Functional Nanocrystal Solids by Infilling with Atomic Layer Deposition”, Nano Letters, Vol. 11, No. 12, 24 October 2011, pp. 5349-55, describes optoelectronic devices based on lead chalcogenide, specifically lead selenide (PbSe), nanocrystalline films, where low-temperature ALD is used to fill lead selenide (PbSe) nanocrystals with metal oxides, specifically amorphous alumina, to produce an inorganic nanocomposite material in which the nanocrystals are fixed in place and protected from oxidative and photothermal damage.

[0018] Y. Liu, J. Tolentino, M. Gibbs, R. Ihly, C. L. Perkins, Y. Liu, N. Crawford, J. C. Emminger and M. Law, "PbSe Quantum Dot Field-Effect Transistors with Air Stable Electron Mobilities above 7 cm" 2 V -1 s -1 ”, Nano Letters, Vol. 13, No. 4, 1 March 2013, pp. 1578-87, describes films of lead chalcogenides, specifically lead selenide (PbSe), colloidal quantum dots, which are filled with metal oxides, specifically amorphous alumina, by low-temperature ALD to obtain high charge carrier mobilities in FETs with simultaneous passivation of the surface states by ALD coating.

[0019] Despite the advantages contained in the above-mentioned devices and detectors, there remains a need for improvements in optical sensors and spatial detectors that are simple, cost-effective, and yet reliable. Summary of the Invention [Problem to be solved by the invention]

[0020] The problem to be solved by the present invention is therefore to define an apparatus and method for optical detection which at least substantially avoids the disadvantages of known apparatus and methods of this type.

[0021] It would be desirable to provide improved optical sensors and detectors for detecting optical radiation, particularly for optical detection of optical radiation in the infrared spectral range, particularly relating to sensing at least one of transmittance, absorptance, emissivity and reflectance, that are simple, cost-effective and yet reliable.

[0022] Furthermore, it is particularly desirable to provide improved optical sensors and detectors for detecting optical radiation that are simple, cost-effective, yet reliable, for determining the position of an object in space, particularly with respect to the depth or depth and width of at least one object, and more particularly that may cover at least a region in the infrared spectral range.

[0023] More specifically, it may be desirable to be able to provide the optical sensor with an encapsulation layer that may be particularly adapted to avoid degradation due to external influences such as humidity and / or oxygen. Here, it may be advantageous to use an encapsulation material that exhibits suitable absorption properties and that is at the same time easy to manufacture and easy to integrate on the circuit carrier device. [Means for solving the problem]

[0024] This problem is solved by the invention with the features of the independent patent claims. Advantageous developments of the invention, which can be realized individually or in combination, are set out in the dependent claims and / or in the following description and detailed embodiments. [Brief description of the drawings]

[0025] [Figure 1A] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1B] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1C] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1D] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1E] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1F] 1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 1G]1A-1D illustrate some preferred exemplary embodiments of an optical sensor according to the present invention. [Figure 2A] 1A-1D are X-ray diffraction (XRD) diagrams of various samples according to the present invention. [Figure 2B] 1A-1D are X-ray diffraction (XRD) diagrams of various samples according to the present invention. [Figure 2C] 1A-1D are X-ray diffraction (XRD) diagrams of various samples according to the present invention. [Figure 2D] 1A-1D are X-ray diffraction (XRD) diagrams of various samples according to the present invention. [Figure 3A] 1A-1D illustrate an exemplary embodiment of a method for manufacturing an optical sensor according to the present invention. [Figure 3B] 1A-1D illustrate an exemplary embodiment of a method for manufacturing an optical sensor according to the present invention. [Figure 3C] 1A-1D illustrate an exemplary embodiment of a method for manufacturing an optical sensor according to the present invention. [Figure 3D] 1A-1D illustrate an exemplary embodiment of a method for manufacturing an optical sensor according to the present invention. [Figure 3E] 1A-1D illustrate an exemplary embodiment of a method for manufacturing an optical sensor according to the present invention. [Figure 4] FIG. 2 shows an exemplary embodiment of a detector according to the present invention, including a longitudinal light sensor. [Diagram 5] 1 shows an exemplary embodiment of a lateral optical sensor according to the present invention; [Figure 6] FIG. 2 shows a typical schematic setup of an evaluation scheme for evaluating lateral sensor signals. [Figure 7A] FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 7B] FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 7C] FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 7D]FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 7E] FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 7F] FIG. 2 illustrates the relationship between lateral sensor signal and light spot position in an exemplary embodiment of a lateral light sensor. [Figure 8] 1A-1D illustrate exemplary embodiments of optical sensors, detectors, detector systems, human machine interfaces, entertainment devices, tracking systems and cameras according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] As used herein, the terms "having," "including," or "containing," as well as grammatical variations thereof, are used in a non-exclusive manner. Thus, the terms "A has B," "A includes B," or "A contains B" can refer to both the fact that A contains one or more additional components and / or ingredients in addition to B, and the case where there are no other components, ingredients, or elements in A other than B.

[0027] In a first aspect of the present invention, an optical sensor is disclosed, comprising: - at least one layer of photoconductive material, - at least two separate electrical contacts in contact with the layer of photoconductive material; and a cover layer deposited on the layer of photoconductive material, the cover layer being an amorphous layer comprising at least one metal-containing compound.

[0028] As used herein, an "optical sensor" is generally a device designed to generate at least one sensor signal in response to illumination of a sensor area by a light beam. The sensor signal may generally be any signal indicative of the position of an object. By way of example, the sensor signal may be or have a digital and / or analog signal. By way of example, the sensor signal may be or have a voltage signal and / or a current signal. Additionally or alternatively, the sensor signal may be or have digital data. The sensor signal may have a single signal value and / or a series of signal values. The sensor signal may further comprise any signal derived by combining two or more individual signals, such as by averaging two or more signals and / or forming a quotient of two or more signals.

[0029] An "object" may generally be any object selected from a living object and a non-living object. Thus, by way of example, at least one object may include one or more articles and / or one or more parts that make up an article. Additionally or alternatively, an object may be or include one or more living organisms and / or one or more parts thereof, such as one or more body parts of a human and / or animal user.

[0030] As used herein, "position" generally refers to any item of information regarding the location and / or orientation of an object in space. For this purpose, by way of example, one or more coordinate systems may be used, and the position of the object may be determined by using one, two, three or more coordinates. By way of example, one or more Cartesian coordinate systems and / or other types of coordinate systems may be used. In one example, the coordinate system may be the coordinate system of a detector having a predetermined position and / or orientation.

[0031] According to the present invention, the optical sensor includes at least one layer of photoconductive material, which layer of photoconductive material can function as a sensor area. As used herein, a "sensor area" is considered to be a partition of the optical sensor that is designed to receive illumination of the optical sensor by a light beam, and the illumination as received by the sensor area causes the generation of at least one sensor signal, and the generation of the sensor signal can be defined by a defined relationship between the sensor signal and the manner of illumination of the sensor area.

[0032] As used herein, the term "photoconductive material" refers to a material that can sustain an electric current and thus exhibits a certain electrical conductivity, specifically, the electrical conductivity depends on the illumination of the material. Alternatively, the term "photoresistive material" can also be used to refer to the same type of material, since electrical resistivity is defined as the reciprocal value of electrical conductivity. In this type of material, an electric current can be induced through the material via at least one first electrical contact to at least one second electrical contact, where the first electrical contact is insulated from the second electrical contact, while both the first electrical contact and the second electrical contact are in direct contact with the material. For this purpose, the direct connection can be provided by any known means known from the state of the art, such as plating, welding, soldering, wire bonding, thermosonic bonding, stitch bonding, ball bonding, wedge bonding, compliant bonding, thermocompression bonding, anodic bonding, direct bonding, plasma activated bonding, eutectic bonding, glass frit bonding, adhesives, transient liquid phase diffusion bonding, surface activated bonding, tape automated bonding, or by depositing a highly conductive material, in particular a metal such as gold, beryllium doped gold, copper, aluminum, silver, platinum or palladium, as well as alloys comprising at least one of the abovementioned metals, in the contact area.

[0033] For the purposes of the present invention, the photoconductive materials used in the sensor region of the photosensor are preferably inorganic photoconductive materials and / or solid solutions thereof and / or doped solutions thereof. VariantsAs used herein, the term "solid solution" refers to a state of a photoconductive material in which at least one solute may be contained in a solvent, whereby a homogeneous phase may be formed and the crystal structure of the solvent may generally be unchanged by the presence of the solute. As an example, the binary cadmium telluride (CdTe) may be dissolved in zinc telluride (ZnTe) to form Cd 1-x Zinc x Te, where the value of x can range from 0 to 1. Further, as used herein, "doped Variants The term "doped" may refer to a state of a photoconductive material in which individual atoms, apart from the constituents of the material itself, are introduced into sites within the crystal that are otherwise occupied by intrinsic atoms in the undoped state. As an example, a pure silicon crystal may be doped with one or more of boron, aluminum, gallium, indium, phosphorus, arsenic, antimony, germanium, or other atoms, particularly to modify the chemical and / or physical properties of the silicon crystal.

[0034] In this regard, inorganic photoconductive materials may include, in particular, selenium, tellurium, selenium-tellurium alloys, metal oxides, group 4 elements or compounds, i.e. elements belonging to group 4 or compounds with at least one group 4 element, group 3-group 5 compounds, i.e. compounds with at least one group 3 element and at least one group 5 element, group 2-group 6 compounds, i.e. compounds with at least one group 2 element or at least one group 12 element on the one hand and at least one group 6 element on the other hand, and / or chalcogenides, which may preferably be selected from the group consisting of sulfide chalcogenides, selenide chalcogenides, ternary chalcogenides, quaternary or higher chalcogenides. However, other inorganic photoconductive materials may be suitable as well.

[0035] As previously mentioned, the chalcogenide is preferably selected from the group consisting of sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, ternary chalcogenides, quaternary or higher chalcogenides, and may be suitable for use as a photoconductive material in the sensor region of a photosensor, particularly since such materials are known to be both cost-effective and reliable in many different applications, including photodetectors for the infrared spectral range.

[0036] In particular, the sulfide chalcogenides are lead sulfide (PbS), cadmium sulfide (CdS), zinc sulfide (ZnS), mercury sulfide (HgS), silver sulfide (Ag 2 S), manganese sulfide (MnS), bismuth trisulfide (Bi 2 S 3 ), antimony trisulfide (Sb 2 S 3 ), arsenic trisulfide (As 2 S 3 ), tin(II) sulfide (SnS), tin(IV) disulfide (SnS 2 ), indium sulfide (In 2 S 3 ), copper sulfide (CuS or Cu 2 S), cobalt sulfide (CoS), nickel sulfide (NiS), molybdenum disulfide (MoS 2 ), iron disulfide (FeS 2 ), and chromium trisulfide (CrS 3 ) may be selected from the group consisting of

[0037] In particular, the selenide chalcogenides include lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), and bismuth triselenide (BiSe). 2 Se 3 ), mercury selenide (HgSe), antimony triselenide (Sb 2 Se 3 ), arsenic triselenide (As 2 Se 3 ), Nickel Selenide (NiSe), Thallium Selenide (TlSe), Copper Selenide (CuSe or Cu 2 Se), molybdenum diselenide (MoSe 2), tin selenide (SnSe), cobalt selenide (CoSe), and indium selenide (In 2 Se 3 In addition, solid solutions and / or doped solutions of the above compounds or other compounds of this type may be selected from the group consisting of: Variants is also suitable.

[0038] In particular, the telluride chalcogenides include lead telluride (PbTe), cadmium telluride (CdTe), zinc telluride (ZnTe), mercury telluride (HgTe), and bismuth telluride (Bi 2 Te 3 ), arsenic tritelluride (As 2 Te 3 ), antimony tritelluride (Sb 2 Te 3 ), Nickel Telluride (NiTe), Thallium Telluride (TlTe), Copper Telluride (CuTe), Molybdenum Ditelluride (MoTe 2 ), tin telluride (SnTe), cobalt telluride (CoTe), silver telluride (Ag 2 Te), and indium telluride (In 2 Te 3 In addition, solid solutions and / or doped solutions of the above compounds or other compounds of this type may be selected from the group consisting of: Variants is also suitable.

[0039] In particular, the ternary chalcogenides are mercury cadmium telluride (HgCdTe, MCT), mercury zinc telluride (HgZnTe), mercury cadmium sulfide (HgCdS), lead cadmium sulfide (PbCdS), mercury lead sulfide (PbHgS), copper indium disulfide (CuInS 2 , CIS), cadmium sulfide selenide (CdSSe), zinc sulfide selenide (ZnSSe), thallium sulfide selenide (TlSSe), zinc cadmium sulfide (CdZnS), cadmium chromium sulfide (CdCr 2 S 4 ), mercury chromium sulfide (HgCr 2 S 4 ), Copper Chromium Sulfide (CuCr 2 S 4), cadmium lead selenide (CdPbSe), copper indium diselenide (CuInSe 2 ), indium gallium arsenide (InGaAs), lead monoxide sulfide (Pb 2 OS, Lead monoxide selenide (Pb 2 OSe), lead sulfide selenide (PbSSe), arsenic selenide telluride (As 2 Se 2 Te), indium gallium phosphide (InGaP), gallium arsenide phosphide (GaAsP), aluminum gallium phosphide (AlGaP), cadmium selenide (CdSeO 3 ), cadmium zinc telluride (CdZnTe), and cadmium zinc selenide (CdZnSe), further combinations by application of the aforementioned binary chalcogenides and / or compounds belonging to the binary group III-V compounds. Furthermore, solid solutions and / or doped solutions of the above compounds or other compounds of this type may be used. Variants is also suitable.

[0040] With respect to quaternary or higher chalcogenides, such materials may be selected from quaternary or higher chalcogenides that may already be known to exhibit suitable photoconductive properties. In particular, Cu(In,Ga)S / Se 2 or Cu 2 ZnSn(S / Se) 4 A compound having the composition: is suitable for this purpose.

[0041] With regard to group 3-5 compounds, such semiconductor materials may be selected from the group consisting of indium antimonide (InSb), boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), aluminum antimonide (AlSb), indium nitride (InN), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). In addition, solid solutions and / or doped versions of the above compounds or other such compounds may be used. Variantsis also suitable.

[0042] Concerning the group 2-6 compounds, such semiconductor materials may be selected from the group consisting of cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), cadmium zinc telluride (CdZnTe), mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), and mercury zinc selenide (CdZnSe). However, other group 2-6 compounds are also suitable. Furthermore, solid solutions of the above compounds or other such compounds may also be relevant.

[0043] With regard to metal oxides, this type of semiconductor material is made of known metal oxides capable of exhibiting photoconductivity, in particular copper(II) oxide (CuO), copper(I) oxide (CuO 2 ), Nickel oxide (NiO), Zinc oxide (ZnO), Silver oxide (Ag 2 O), manganese oxide (MnO), titanium dioxide (TiO 2 ), barium oxide (BaO), lead oxide (PbO), cerium oxide (CeO 2 ), Bismuth oxide (Bi 2 O 3 ), cadmium oxide (CdO), ferrite (Fe 3 O 4 ), and perovskite oxides (ABC 3 where A represents a divalent cation, B represents a tetravalent cation, and C represents oxygen. Furthermore, ternary or higher metal oxides may also be applied. Furthermore, solid solutions and / or doped solutions of the above compounds or other compounds of this type may also be used. Variants which may be stoichiometric or non-stoichiometric compounds are also suitable. As will be explained in more detail below, the selection of metal oxides which can simultaneously exhibit transparency or translucency is preferred.

[0044] With respect to group 4 elements or compounds, this type of semiconductor material is selected from the group consisting of doped diamond (C), doped silicon (Si), silicon carbide (SiC) and silicon germanium (SiGe), and the semiconductor material can be selected from crystalline, or preferably microcrystalline or amorphous semiconductor materials.To provide a silicon-based photoconductor that can particularly simultaneously exhibit high resistivity, long charge carrier lifetime and low surface recombination rate, doped silicon, which includes low dopant concentration and low defect density, such as present in silicon float zone wafers, can be preferably selected.

[0045] In a preferred embodiment, the photoconductive material may be or include at least one chalcogenide, preferably selected from the group consisting of sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, and ternary chalcogenides. As commonly used, the term "chalcogenide" refers to compounds that may include group 16 elements other than oxides, namely sulfides, selenides, and tellurides. In particular, the photoconductive material may be or include a sulfide chalcogenide, preferably lead sulfide (PbS), a selenide chalcogenide, preferably lead selenide (PbSe), a telluride chalcogenide, preferably cadmium telluride (CdTe), or a ternary chalcogenide, preferably mercury zinc telluride (HgZnTe; MZT). At least the above-mentioned preferred photoconductive materials are generally known to exhibit unique absorption characteristics in the infrared spectral range, so that a photosensor having a layer including the above-mentioned preferred photoconductive materials may preferably be used as an infrared sensor. However, other embodiments and / or other photoconductive materials, particularly the above-mentioned photoconductive materials, are also suitable.

[0046] In a particularly preferred embodiment of the invention, the light sensor may be provided in the form of at least one layer of photoconductive material, which may comprise a chalcogenide, preferably lead sulfide (PbS), lead selenide (PbSe) or other suitable material. With regard to the above-mentioned materials, layers of those materials are included which may comprise at least a few crystals exhibiting a size of more than 15 nm. Here, the layer of photoconductive material may be produced by application of at least one deposition method selected from the group consisting of vacuum deposition, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, electrodeposition, anodization, electroconversion, electroless immersion growth, sequential ion adsorption and reaction, chemical bath deposition or solution-gas interface techniques. As a result, the layer of photoconductive material may exhibit a thickness in the range of 10 nm to 100 μm, preferably 100 nm to 10 μm, in particular 300 nm to 5 μm. However, other photoconductive materials mentioned above and / or below may also be suitable for this purpose and may be processed in the same or similar manner.

[0047] Preferably, the photoconductive material can be produced by depositing the individual materials on an insulating substrate, in particular a ceramic or glass substrate, in order to provide mechanical stability to the layer of photoconductive material. In this way, the optical sensor according to the invention can be obtained by depositing selected layers on a suitable substrate and providing at least two individual electrical contacts. Here, the illumination of the photoconductive material in the sensor area by an incident light beam results in a variation in the electrical conductivity of the illuminated layer of the photoconductive material. In certain embodiments, the substrate can be or comprise a conductive substrate, and an additional insulating intermediate layer can be present between the conductive substrate and at least one layer of photoconductive material.

[0048] As a result, when the sensor area is impinged with a light beam, the at least two electrical contacts provide a sensor signal depending on the electrical conductivity of the photoconductive material. For this purpose, at least two individual electrical contacts may be applied at different positions on the layer of photoconductive material, in particular such that at least two of the individual electrical contacts are electrically insulated from each other. Here, the electrical contacts may have a vapor-deposited metal layer, which can be easily provided by known deposition techniques. In particular, the vapor-deposited metal layer may comprise one or more of silver, aluminum, platinum, magnesium, chromium, titanium or gold. Alternatively, the electrical contacts may alternatively comprise a graphene layer.

[0049] In this regard, it can be emphasized that the ALD encapsulation and / or passivation of quantum dots and / or nanocrystals, including lead sulfide (PbS) or lead selenide (PbSe), is known. Here, quantum dots are usually capped with one or more organic ligands, such as oleic acid, butylamine, or ethanethiol, and the size of these quantum dots is up to 15 nm. However, the synthesis and film formation of quantum dots and / or nanocrystals is completely different from the production of layers of photoconductive materials according to the invention, in particular lead sulfide (PbS) or lead selenide (PbSe). Here, the quantum dots and / or nanocrystals must first be synthesized and require a passivation treatment. This is followed by a washing step and a formulation in an organic solvent. Only then can the formulation containing the quantum dots and / or nanocrystals be applied to a substrate, where they must be treated with heat and / or other organic ligands, for example to apply a ligand exchange.

[0050] In contrast, crystals containing photoconductive materials, especially lead sulfide (PbS) or lead selenide (PbSe), can be produced in sizes from 15 nm to 300 nm. This kind of crystals can be deposited directly from precursors that may decompose during deposition. No capping of organic ligands occurs, rather there may be surface oxidation. Thus, from a material chemistry point of view, quantum dot and / or nanocrystalline photoconductors show totally different properties with respect to the crystalline photoconductors according to the present invention, even if they are based on the same material, such as lead sulfide (PbS) or lead selenide (PbSe). This discovery is in line with the Al 2 O 3 This is supported by C. Hu et al. who showed a lead sulfide (PbS) colloidal quantum dot photoconductor with ALD passivation. Compared to the photoconductive layer according to the present invention, the absorption maximum shifts to shorter wavelengths and the photoconductor of C. Hu et al. shows a relatively slow response.

[0051] According to the invention, the light sensor further comprises a cover layer deposited on the photoconductive material. Here, the cover layer can preferably be deposited in direct contact with the layer of photoconductive material. In a preferred embodiment, the cover layer can be deposited on the layer in such a way that it can completely cover the accessible surface of the photoconductive material. Preferably, at least one deposition method can be used to deposit the metal-containing compound on the photoconductive material. For this purpose, the at least one deposition method can be selected in particular from atomic layer deposition, chemical vapor deposition, sputtering processes, or combinations thereof. Thus, in a particularly preferred embodiment, the cover layer can be or include an atomic deposition layer, a chemical vapor deposition layer, a sputtering layer, or a layer produced by using at least two of the above-mentioned deposition methods, with an atomic deposition layer or a layer produced by a combination of atomic deposition and sputtering being particularly preferred. In other words, in this particularly preferred embodiment, the cover layer can be obtained by an ALD process, a CVD process, a sputtering process, or a combination thereof, with an ALD process or a combination of ALD and sputtering being particularly preferred. In this specification, the term "atomic layer deposition", its equivalents "atomic layer epitaxy" or "molecular layer deposition", and their respective abbreviations "ALD", "ALE" or "MLD" are generally used to refer to a deposition process that may include a self-limiting process step and a subsequent self-limiting reaction step. Thus, the process applied according to the present invention may also be referred to as an "ALD process". For further details regarding the ALD process, reference may be made to George, Chem. Rev., 110, pp. 111-131, 2010. Furthermore, the term "chemical vapor deposition", usually abbreviated as "CVD", refers to a method in which the surface of a substrate or a layer located on a substrate is exposed to at least one volatile precursor, where the precursor may react and / or decompose on the surface to produce the desired deposit. Often, a gas flow may be applied over the surface to remove possible by-products.Furthermore, the term "sputtering" refers to a process in which a solid target material is used to release particles as a result of bombardment of the target by energetic particles. Furthermore, the combination of the ALD process and the sputtering process allows first sputtering a coarse phase with coarse grains on the surface of the photoconductive material, followed by the generation of a fine phase by using ALD that can be adapted to fill the spaces, gaps and / or pores between the coarse grains, which ultimately allows a thicker cover layer to be provided in a shorter time. On the other hand, first performing an ALD process followed by a sputtering process allows first a conformal coating, in particular filling of the porous photoconductive layer by a slow ALD process, in order to protect the photoconductive layer from the subsequent sputtering process that may be more damaging to the material surface, and then providing a thick layer within a short processing time. For further details regarding the preferred manufacturing process for providing the cover layer, reference can be made to the method description in other parts of this document.

[0052] Further according to the invention, the cover layer comprises at least one metal-containing compound, where the metal-containing compound can preferably comprise a metal, in particular lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), carbon monoxide (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), tungsten (Tg), tin (Tb), tin (Tg), tin (Tc ... ), indium (In), tin (Sn), cesium (Cs), barium (Ba), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl), and bismuth (Bi). In certain embodiments, the metal-containing compound may comprise a metalloid, alternatively referred to as a "metalloid," which may be selected from the group consisting of boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), and tellurium (Te). Preferably, the at least one metal-containing compound may be selected from the group consisting of aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), and tungsten (W).

[0053] Here, the at least one metal-containing compound is preferably selected from the group comprising oxides, hydroxides, chalcogenides, pnictides, carbides, or combinations thereof. As already defined above, the term "chalcogenides" refers to compounds that may contain, in addition to oxides, elements of group 16, namely sulfides, selenides, and tellurides. Similarly, the term "pnictides" refers to compounds, preferably binary compounds, that may contain elements of group 15 of the periodic table, namely nitrides, phosphides, arsenides, and antimonides. As described in more detail below, the metal-containing compound preferably comprises at least one oxide, at least one hydroxide, or combinations thereof, preferably of aluminum (Al), titanium (Ti), zirconium (Zr) or hafnium (Hf), or also of silicon (Si). In a particularly preferred embodiment of the present invention, the metal-containing compound contained in the cover layer may be a composition comprising aluminum oxide and / or aluminum hydroxide, which is generally referred to for convenience as Al. 2 O 3 It is also shown.

[0054] As already mentioned above, the light sensor preferably comprises a cover layer deposited on the layer of photoconductive material in such a way that it is able to completely cover the accessible surfaces of the photoconductive material. The cover layer is therefore adapted in the first place to encapsulate the photoconductive material. As used herein, the term "encapsulation" may refer to a packaging, preferably an airtight packaging, in order to avoid as far as possible a partial or complete degradation of the light sensor or a partition thereof, in particular of the photoconductive material contained within the sensor area of ​​the light sensor, due to external influences, such as for example humidity and / or oxygen contained in the surrounding atmosphere. In this specification, the packaging may preferably be adapted to cover all the accessible surfaces of the photoconductive material, where it may be considered that the layer of photoconductive material is deposited on a substrate already adapted to protect the partition of the surface of the photoconductive material. In other words, the substrate and the cover layer may be adapted to cooperate to complete the packaging, preferably an airtight packaging, of the photoconductive material.

[0055] Surprisingly, the cover layer, secondly, exhibits an additional function as a result of its deposition on the cover layer of the photoconductive material. As will be explained in more detail below, the cover layer is adapted to activate the photoconductive material in the sense that it can considerably improve the photoconductive properties of the photoconductive material after deposition of the cover layer on the layer of photoconductive material and subsequent heat treatment of the compound structure comprising the cover layer deposited directly on the photoconductive material. Without being bound by theory, deposition of the cover layer on the photoconductive material may not only result in direct contact between the respective surfaces of the cover layer and the photoconductive material. Furthermore, the heat treatment of the compound structure may cause the material contained in the cover layer or at least partitions thereof to partially penetrate into the photoconductive material, in particular to effect physical and / or chemical effects of the detailed structure of the photoconductive material and / or the composition of the photoconductive material. This effect appears to allow small partitions of the material contained in the cover layer to penetrate into receptive parts of the photoconductive material, such as phase boundaries, voids or holes. This effect seems to be particularly relevant for the amorphous structure of the cover layer, which can be revealed by applying suitable measurement procedures such as energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM) or, as shown in Figure 2, X-ray diffraction (XRD). The amorphous nature of the cover layer can therefore be determined in particular by measuring it together with an internal standard such as crystalline aluminum oxide or quartz, or with the crystalline PbS itself, and it can therefore be considered that amorphousness has been achieved if a crystallinity of less than 20% is obtained based on this measurement method. Moreover, this effect is in contrast to the properties attributed to G. H. Blount et al. (see above), where electron beam evaporation was used and the alumina (Al) crystallites were revealed by the inspection of the fractured edges. 2 O 3 ) layer.

[0056] Furthermore, the photoconductive properties of the photoconductive material PbS, as used by G.H. Blount et al., appear to be slightly affected by the provision of an encapsulation layer on the PbS layer. The specific sensitivity S of a photodetector containing a PbS layer, as described by G.H. Blount et al. 1 is 1.44×10 without the encapsulation layer. 2 cm 2 / W, crystalline alumina (Al 2 O 3 ) layer was applied. 2 cm 2 / W, resulting in a specific sensitivity of lead sulfide (PbS) of S 1 As will be shown in more detail below, alumina (Al 2 O 3 ) The improvement of the photodetector according to the invention after application of the cover layer is more than a factor of 50, preferably more than a factor of 100. The amorphous nature of the cover layer according to the invention therefore not only improves the protective encapsulation for the photoconductive material, in particular to avoid degradation of the photoconductive material due to external influences such as moisture and / or oxygen, but can also contribute substantially to the activation of the photoconductivity of the photoconductive material which may be in direct contact with the cover layer.

[0057] In alternative embodiments, the cover layer may be or include a laminate having at least two adjacent layers, where the adjacent layers may differ in their respective compositions, in particular in such a way that one, both, some, or all of the adjacent layers may include one of the metal-containing compounds. Here, the adjacent layers may include two different metal-containing compounds, as described above, to provide an amorphous structure. By way of example, the cover layer may include alternating adjacent layers of an aluminum (Al)-containing compound and a zirconium (Zr)- or hafnium (Hf)-containing compound. However, other combinations of metal-containing compounds are also possible. Furthermore, the laminate may further include additional adjacent layers that do not have any of the metal-containing compounds as described elsewhere in this application, but rather may be or include at least one of a metal compound, a polymeric compound, a silicone compound, or a glass compound. Here, other types of materials may also be suitable. As a result, the laminate may include an additional adjacent layer that is amorphous, or alternatively may be or include a crystalline or nanocrystalline layer.

[0058] In a particularly preferred embodiment of the invention, the cover layer may exhibit a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, most preferably 50 to 75 nm. This thickness reflects in particular the amount of metal-containing compounds in the cover layer that is advantageous for achieving the above-mentioned functions of providing encapsulation of the photoconductive material and, at the same time, activating the photoconductive properties of the photoconductive material. This feature again clearly contrasts with the thickness of the encapsulation layer as shown in FIG. 2 of G.H. Blount (see above), where it is indicated as 780 nm. In this respect, it can be emphasized that the preferred values ​​for the thickness of the cover layer may be advantageous with regard to an increase in the transparency of the cover layer as well as a less bulky implementation of the light sensor.

[0059] In a further particularly preferred embodiment of the present invention, the cover layer may be a conformal layer with respect to the adjacent surface of the photoconductive material. Thus, as defined above, the thickness of the conformal layer follows the corresponding surface of the photoconductive material within a deviation of ±50 nm, preferably ±20 nm, most preferably ±10 nm, where the deviation occurs over at least 90%, preferably at least 95%, most preferably at least 99% of the surface of the cover layer, thereby leaving any contamination or imperfections that may be present on the surface of the cover layer. Again, this feature is particularly in contrast to the surface of the encapsulation layer as shown in Figure 2 of G.H. Blount (see above), which appears to show a fairly large deviation over the entire surface of the cover layer.

[0060] As mentioned above, the layer of photoconductive material can be applied directly or indirectly to at least one substrate, with at least one of the substrate and the cover layer being preferably optically transparent within the selected wavelength range. It is therefore particularly advantageous to select the metal-containing compound used in the cover layer, preferably to be optically transparent within the desired wavelength range, in particular by exhibiting suitable absorption properties. Alternatively or additionally, the material applied to the substrate may exhibit optically transparent properties within the desired wavelength range. In particular, this feature allows a wider range of material choices for the metal-containing compound, which may not be optically transparent within the desired wavelength range, since the substrate can exhibit sufficient transparency. To this end, the substrate may in particular comprise at least one insulating material that is at least partially transparent, the insulating material being preferably at least partially glass, metal oxide, ceramic material, or Doped variants of them Here, the insulating material is in particular selected from at least one known transparent glass, weakly doped semiconductor, metal oxide or ceramic material, in particular sapphire (Al 2 O 3), glass, quartz, fused silica, silicon, germanium, zinc sulfide (ZnS) or zinc selenide (ZnSe). Alternatively, the substrate comprises a material having at least partially optically transparent properties. In particular, the insulating material, or additionally the cover layer may therefore also be selected to exhibit at least partially optically transparent properties. On the other hand, if the substrate is already at least partially transparent, a greater variety of different materials can be employed for the cover layer, including optically opaque materials.

[0061] As mentioned above, the layer of photoconductive material can be applied directly or indirectly to at least one substrate, with at least one of the substrate and the cover layer preferably being optically transparent within a selected wavelength range. It can therefore be advantageous to select the metal-containing compound used in the cover layer to be optically transparent, preferably within the desired wavelength range, in particular by exhibiting suitable absorption properties. Alternatively or additionally, the material applied to the substrate may exhibit optically transparent properties within the desired wavelength range. In particular, this feature allows a wider range of material choices for the metal-containing compound that is not optically transparent within the desired wavelength range, as long as the substrate can exhibit sufficient transparency. Here, the substrate material can be selected in particular from at least one of transparent glass, silicon, germanium, metal oxides, metals or semiconductor materials, in particular from aluminum-doped zinc oxide (AZO), indium tin oxide (ITO), zinc sulfide (ZnS) or zinc selenide (ZnSe), where glass or silicon are particularly preferred. For semiconductor or conductive layers that may exhibit too high electrical conductivity to function as a good insulating substrate, an insulating intermediate layer that is optically transparent within the desired wavelength range can be used.

[0062] Moreover, the cover layer may be a functional layer adapted to exhibit at least one further function in addition to the above-mentioned functions of simultaneously providing encapsulation of the photoconductive material and activating the photoconductive properties of the photoconductive material. In this regard, the metal-containing compound may be specifically selected so that it can simultaneously perform the desired further function. In particular, the metal-containing compound used for the cover layer may exhibit a high refractive index, preferably at least 1.2, more preferably at least 1.5, in order to qualify as a suitable anti-reflection layer. As mentioned above, the cover layer may be deposited on the layer of the photoconductive material according to the invention in a conformal manner, in particular using ALD or a combination of ALD and sputtering, so that the cover layer closely follows the surface of the photoconductive material. In particular, lead sulfide (PbS) or lead selenide (PbSe) layers usually do not present a smooth surface, but rather a rather rough surface with irregularities, while alumina (Al 2 O 3 It has been found that ZnO (ZnS) can be deposited as a cover layer that can closely follow the surface of a lead sulfide (PbS) or lead selenide (PbSe) layer. As a result, the reflection due to the incident light can be minimized. This observation seems to be in contrast to known deposition methods, where the deposited material usually grows by coalescence, which only allows to minimize protrusions and depressions that may be present on the surface of the layer of photoconductive material. Furthermore, the cover layer may be selected from functional layers, in particular scratch-resistant layers, hydrophilic layers, hydrophobic layers, self-cleaning layers, anti-fogging layers, and conductive layers. Other kinds of functional layers, in particular high-dielectric constant layers, namely, preferably alumina (Al 2 O 3 ) or zirconia (ZrO 2Cover materials that may exhibit a high dielectric constant, such as .), and functional layers that generate high dielectric strength, in particular by using a high electric field, such as by applying a high voltage through an optical sensor, are also possible. For the purpose of a particular selected functional layer, the cover layer may additionally contain one or more additives, such as one or more stabilizers, to complete the desired further functions of the cover layer. In particular, the cover layer may contain glass or glass particles as stabilizers. However, other types of additives may also be suitable.

[0063] In certain embodiments, especially when it is not appropriate to provide the cover layer with the desired additional function or the range of such additional functions provided by the selected cover layer is not sufficient, the cover layer may additionally be at least partially covered by at least one additional layer at least partially deposited on the cover layer. Alternatively or additionally, the at least one additional layer may be at least partially deposited between the layer of photoconductive material and the cover layer. Preferably, the additional layer is an additional functional layer or can exhibit an additional function, and thus may include at least one of an anti-reflection layer, an optical filter layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high dielectric constant layer, or a conductive layer. Preferably, the additional layer is an additional function or can exhibit an additional function, and thus may include at least one of an anti-reflection layer, an optical filter layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high dielectric constant layer, or a conductive layer. Here, a person skilled in the art can easily select and provide at least one additional layer. However, other embodiments are also possible.

[0064] In a preferred embodiment, the cover layer may partially or completely cover the electrical contacts, which may be configured to be bondable to one or more leads to an external circuit. Here, the electrical contacts may be bondable by using wires, such as gold or aluminum wires, and the electrical contacts may preferably be bondable through the cover layer. In a particular embodiment, an adhesive layer may be provided on the electrical contacts, in which case the adhesive layer may be particularly suitable for bonding. To this end, the adhesive layer may include at least one of nickel (Ni), chromium (Cr), titanium (Ti), or palladium (Pd).

[0065] Without wishing to be bound by theory, it is usually believed that an increase in mobility is favorable for the performance of photoconductive materials. However, this assumption is only appropriate if other parameters, especially the lifetime of the charge carriers, cannot be affected by this. As shown in “Engineering the Temporal Response of Photoconductive Photodetectors via Selective Introduction of Surface Trap States” by G.Konstantatos, L.Levina, A.Fischer and EH Sargent, Nanoletters 2008, Vol.8, No.5, pp.1446-50, and “Lead sulfide nano-crystal photodetector technologies” by Rinku Saran and Richard J.Curry, Nature Photonics 10, 2016, pp.81-92, it seems that non-recombination trap states are favorable for improving the performance of photoconductive devices, even if the trap states may reduce the carrier mobility. As shown in C. Soci, A. Zhang, B. Xiang, SA Dayeh, DP R Aplin, J. Park, XY Bao, YH Lo and D. Wang, “ZnO Nanowire UV Photodetectors with High Internal Gain”, Nanoletters 2007, Vol. 7, No. 4, pp. 1003-09, the trap states are believed to extend the charge carrier lifetime, resulting in increased photoconductive gain.

[0066] On the other hand, with regard to field effect transistors (FETs), it is generally believed that the reduction of charge carrier mobility and the presence of trap states are completely detrimental to the performance of FETs, in particular they can cause adverse off-currents, non-linear transfer curves, and / or non-linear contact effects, as shown for example in "High Permittivity Gate Dielectric Materials" by S. Kar, Springer, Berlin, Heidelberg, p. 66, or "Organic Electronics 7" by P. Stallinga and H. L. Gomes, pp. 592-599 (2006).

[0067] Comparing quantum dot solar cells and FETs, as described by Y. Liu et al. (see above), it should be noted that the photosensor according to the invention does not include a charge carrier selection layer and therefore cannot be considered as a photovoltaic device. Due to the blocking nature of the traps in the charge selection layer, no photoconductive gain as described above can be found in photovoltaic devices, so a direct comparison cannot be made. In the case of photovoltaic devices, the presence of trap states does not generally result in an improvement in the performance of the solar cell. In this regard, it should be noted that the difference in the dimensions of a planar photovoltaic device compared to a lateral photoconductor device results in a difference in the distance that the charge carriers travel and in the charge carrier lifetime given to reach the corresponding electrode. Considering an equivalent electric field obtained by assuming 1 V for the photovoltaic device and 100 V for the photoconductive device, the travel distances are different by an order of magnitude, i.e. only 100 nm for the photovoltaic device, but more than 10 μm for the photoconductive device according to the invention.

[0068] A further different feature of FETs and photoconductive devices can be related to the location of the charge carrier flow. The flow of charge carriers is essentially limited to a few nm thickness from the dielectric in FETs, while in photoconductive devices the entire thickness of the layer can be used. This observation has strong implications regarding the filling of trap states and the influence of trap state density on the performance of the respective devices. In FETs, trap states located a few nm from the dielectric can be filled only with a relatively small number of charge carriers, while bulk layer devices can still remain unsaturated. In contrast, a uniform filling of trap states is expected for photoconductive devices. As a result, the physics responsible for the high performance of photoconductive devices seems to be fundamentally different from the phenomena observed in FET devices.

[0069] In a further aspect of the invention a detector for optical detection, in particular for determining the position of at least one object, in particular for determining the position of at least one object in terms of depth or both depth and width, is disclosed. According to the invention the detector for optically detecting at least one object comprises:

[0070] - at least one optical sensor as described elsewhere herein, the optical sensor including at least one sensor area, the optical sensor configured to generate at least one sensor signal in response to illumination of the sensor area by a light beam; and at least one evaluation device, which is designed to generate at least one coordinate of the object by evaluating the sensor signal of the optical sensor;

[0071] Here, the listed components may be separate components. Alternatively, two or more components may be integrated into one component. Furthermore, the at least one evaluation device may be formed as a separate evaluation device independent of the transfer device and the light sensor, but is preferably connected to the light sensor for receiving the sensor signal. Alternatively, the at least one evaluation device may be fully or partially integrated into the light sensor.

[0072] According to the invention, the detector comprises at least one light sensor as described elsewhere herein. The detector is therefore preferably designed to detect electromagnetic radiation over a fairly wide spectral range, with the ultraviolet (UV), visible, near infrared (NIR) and infrared (IR) spectral ranges being particularly preferred. Here, the following photoconductive materials may be selected in particular for the photoconductive layer in the sensor area of ​​the light sensor:

[0073] - UV spectrum range: doped diamond (C), zinc oxide (ZnO), titanium oxide (TiO 2 ), gallium nitride (GaN), gallium phosphide (GaP) or silicon carbide (SiC); - Visible spectral range: Silicon (Si), Gallium Arsenide (GaAs), Cadmium Sulfide (CdS), Cadmium Telluride (CdTe), Copper Indium Sulfide (CuInS 2 ;CIS), Copper Indium Gallium Selenide (CIGS), Copper Zinc Tin Sulfate (CZTS); - NIR spectral range: Indium gallium arsenide (InGaAs), silicon (Si), germanium (Ge), cadmium telluride (CdTe), copper indium sulfide (CuInS 2 , CIS), copper indium gallium selenide (CIGS), copper zinc tin sulfate (CZTS), where CdTe, CIS, CIGS, and CZTS are particularly preferred for wavelengths above 850 nm; - IR spectral region: for wavelengths below 2.6 μm, indium gallium arsenide (InGaAs); for wavelengths below 3.1 μm, indium arsenide (InAs); for wavelengths below 3.5 μm, lead sulfide (PbS); for wavelengths below 5 μm, lead selenide (PbSe); for wavelengths up to 5.5 μm, indium antimonide (InSb); for wavelengths below 16 μm, mercury cadmium telluride (MCT, HgCdTe).

[0074] As already mentioned above, position generally refers to any item of information regarding the location and / or orientation of an object in space. For this, by way of example, one or more coordinate systems may be used and the position of the object may be determined by the use of one, two or more coordinates. By way of example, one or more Cartesian coordinate systems and / or other types of coordinate systems may be used. In one example, the coordinate system may be the coordinate system of the detector, where the detector has a predefined position and / or orientation. As will be outlined in more detail below, the detector may have an optical axis that may constitute the main viewing direction of the detector. The optical axis may form an axis in the coordinate system, such as the z-axis. Furthermore, one or more additional axes may be provided, preferably perpendicular to the z-axis.

[0075] Thus, by way of example, the detector may form a coordinate system in which the optical axis forms the z-axis and in addition x- and y-axes are provided which are perpendicular to the z-axis and perpendicular to each other. By way of example, the detector and / or part of the detector may be located at a particular point in this coordinate system, such as the origin of the coordinate system. In this coordinate system, a direction parallel or anti-parallel to the z-axis may be considered as a vertical direction and a coordinate along the z-axis may be considered as a vertical coordinate. Any direction perpendicular to the vertical direction may be considered as a horizontal direction and the x- and / or y-coordinates may be considered as horizontal coordinates.

[0076] Alternatively, other types of coordinate systems may be used. Thus, as an example, a polar coordinate system may be used in which the optical axis forms the z-axis, and the distance from the z-axis and the polar angle may be used as additional coordinates. Similarly, directions parallel or anti-parallel to the z-axis may be considered as longitudinal directions, and coordinates along the z-axis may be considered as longitudinal coordinates. Any direction perpendicular to the z-axis may be considered as transverse, and the polar coordinates and / or polar angles may be considered as transverse coordinates.

[0077] As used herein, a detector for optical detection is generally a device adapted to provide at least one item of information regarding the position of at least one object. The detector may be a fixed or mobile device. Furthermore, the detector may be a standalone device or may also form part of another device, such as a computer, a vehicle or any other device. Furthermore, the detector may be a portable device. Other embodiments of the detector are also suitable.

[0078] The detector may be adapted to provide at least one item of information regarding the position of at least one object in any feasible manner. Thus, the information may be provided, for example, electronically, visually, acoustically, or in any combination thereof. The information may further be stored in a data storage device of the detector or in a separate device, and / or provided via at least one interface, such as a wireless interface and / or a wired interface.

[0079] In a particularly preferred embodiment, the optical sensor may be or include a longitudinal optical sensor. As used herein, a "longitudinal optical sensor" is generally a device designed to generate at least one longitudinal sensor signal in dependence on the illumination of a sensor area by a light beam, the longitudinal sensor signal depending on the beam cross section of the light beam in the sensor area, according to the so-called "FiP effect", if the total power of illumination is the same. The longitudinal sensor signal may be any signal that is indicative of a longitudinal position, which may also be generally expressed as depth. By way of example, the longitudinal sensor signal may be or include a digital and / or analog signal. By way of example, the longitudinal sensor signal may be or include a voltage signal and / or a current signal. Additionally or alternatively, the longitudinal sensor signal may be or include digital data. The longitudinal sensor signal may include a single signal value and / or a series of signal values. The longitudinal sensor signal may further include any signal derived by combining a number of individual signals, for example by averaging a number of signals and / or by forming a quotient of a number of signals. For possible embodiments of the longitudinal light sensor and the longitudinal sensor signal, reference can be made to WO2012 / 110924A1.

[0080] Furthermore, the sensor area of ​​the longitudinal photosensor is illuminated by at least one light beam. For the same total power of illumination, the electrical conductivity of the sensor area consequently depends on the beam cross section of the light beam in the sensor area, which can be expressed as the "spot size" generated by the incident beam in the sensor area. Thus, the observable property that the electrical conductivity of the photoconductive material depends on the extent of illumination by the incident light beam in the sensor area containing the photoconductive material in particular achieves the situation that two light beams containing the same total power but generating different spot sizes provide different values ​​for the electrical conductivity of the photoconductive material in the sensor area and are consequently distinguishable with respect to each other.

[0081] Furthermore, since the longitudinal sensor signal is determined by the application of an electrical signal, such as a voltage signal and / or a current signal, the electrical conductivity of the material traversed by the electrical signal is taken into account when determining the longitudinal sensor signal. As will be explained in more detail below, the application of a load resistor employed in series with a bias voltage source and a longitudinal light sensor is preferably used in the present invention. As a result, a longitudinal light sensor comprising a photoconductive material in the sensor area is in principle capable of determining the beam cross section of the light beam in the sensor area from a recording of the longitudinal sensor signal, for example by comparing at least two longitudinal sensor signals and at least one item of information regarding the beam cross section, in particular the beam diameter. Furthermore, the longitudinal optical sensor can be applied to determine the longitudinal position of the respective object since the beam cross section of the light beam in the sensor area, according to the aforementioned FiP effect, depends on the longitudinal position or depth of the object emitting or reflecting the light beam impinging on the sensor area, for the same total illumination power.

[0082] As known from WO2012 / 110924A1, the longitudinal light sensor is designed to generate at least one longitudinal sensor signal in dependence on the illumination of the sensor area, the sensor signal depending on the beam cross section of the illumination on the sensor area for the same total power of the illumination. As an example, a measurement of the photocurrent I is provided as a function of the position of a lens, which is configured to focus the electromagnetic radiation onto the sensor area of ​​the longitudinal light sensor. During the measurement, the lens is displaced relative to the longitudinal light sensor in a direction perpendicular to the sensor area, which results in a change in the diameter of the light spot on the sensor area. In this particular example, a photovoltaic device, in particular a dye solar cell, is employed as material for the sensor area, and the signal of the longitudinal light sensor, in this case the photocurrent, is obviously dependent on the illumination geometry, such that outside the maximum value at the focus of the lens the photocurrent drops to less than 10% of its maximum value.

[0083] As used herein, the term "evaluation device" generally refers to any device designed to generate an information item, i.e. at least one item of information about the position of an object. By way of example, the evaluation device may be or comprise one or more integrated circuits, such as one or more application specific integrated circuits (ASICs), and / or one or more digital signal processors (DSPs), and / or one or more field programmable gate arrays (FPGAs), and / or one or more computers, preferably one or more microcomputers and / or microcontrollers, and / or one or more data processing devices. Additional components may be included, such as one or more pre-processing devices, and / or data acquisition devices, such as one or more devices for receiving and / or pre-processing the sensor signals, such as one or more AD converters and / or one or more filters. As used herein, sensor signals generally refer to one of the longitudinal sensor signals and, if applicable, the lateral sensor signals. Furthermore, the evaluation device may include one or several data storage devices. Furthermore, as outlined above, the evaluation device may include one or more interfaces, such as one or more wireless interfaces and / or one or more wired interfaces.

[0084] The at least one evaluation device may be adapted to execute at least one computer program, for example at least one computer program that executes or assists in the process of generating the information item. By way of example, one or more algorithms may be implemented that can execute a predefined transformation to the position of the object by using the sensor signals as input variables.

[0085] The evaluation device may in particular comprise at least one data processing device, in particular an electronic data processing device, designed to generate an information item by evaluating the sensor signals. The evaluation device is therefore designed to use the sensor signals as input variables and to generate an information item regarding the lateral and longitudinal positions of the object by processing these input variables. The processing may be performed in a parallel, sequential or combined manner. The evaluation device may use any process for forming these information items, for example using calculations and / or at least one stored and / or known relationship. In addition to the sensor signals, one or more further parameters and / or information items may influence said relationship, for example the at least one information item regarding the modulation frequency. This relationship may be determined or may be empirically, analytically or semi-empirically determinable. Particularly preferably, this relationship comprises at least one calibration curve, at least one set of calibration curves, at least one function or a combination of the above-mentioned possibilities. The one or more calibration curves may be stored, for example in the form of a set of values ​​and their associated function values, for example in a data storage device and / or in a table. Alternatively or additionally, however, at least one calibration curve can be stored, for example, in parameterized form and / or in the form of a function. Individual relations can be used for processing the sensor signals into information items. Alternatively, at least one combined relation for processing the sensor signals is also suitable. Various possibilities are conceivable and can also be combined.

[0086] By way of example, the evaluation device can be designed with respect to programming for the purpose of determining the information items. The evaluation device can in particular include at least one computer, for example at least one microcomputer. Furthermore, the evaluation device can also include one or more volatile or non-volatile data memories. As an alternative or in addition to a data processing device, in particular at least one computer, the evaluation device can have one or more further electronic components designed for determining the information items, for example electronic tables, in particular at least one look-up table and / or at least one application specific integrated circuit (ASIC), and / or at least one digital signal processor (DSP), and / or at least one field programmable gate array (FPGA).

[0087] The detector has at least one evaluation device, as described above. In particular, the at least one evaluation device can be designed to fully or partially control or drive the detector, for example to control at least one irradiation source and / or to control at least one modulation device of the detector. The evaluation device can in particular be designed to perform at least one measurement cycle in which one or more sensor signals, such as a plurality of sensor signals, for example a plurality of sensor signals at different irradiation modulation frequencies, are detected.

[0088] The evaluation device is designed to generate at least one information item regarding the position of the object by evaluation of at least one sensor signal as described above. The position of the object may be static or may even include at least one movement of the object, for example a relative movement between the detector or part thereof and the object or part thereof. In this case, the relative movement may generally include at least one linear movement and / or at least one rotational movement. The movement information item may also be obtained, for example, by comparing at least two pieces of information sensed at different times, for example the at least one item of position information may include at least one item of velocity information and / or at least one item of acceleration information, for example at least one item of information regarding at least one relative velocity between the object or part thereof and the detector or part thereof. In particular, the at least one item of position information may generally be selected from: an information item about the distance between the object or part thereof and the detector or part thereof, in particular an information item about the optical path length; an information item about the distance or optical distance between the object or part thereof and any optical transfer device or part thereof; an information item about the position of the object or part thereof relative to the detector or part thereof; an information item about the orientation of the object and / or part thereof relative to the detector or part thereof; an information item about the relative movement between the object or part thereof and the detector or part thereof; an information item about the two-dimensional or three-dimensional spatial configuration of the object or part thereof, in particular the geometric shape or outline of the object. In general, the at least one item of position information may thus, for example, be selected from the group consisting of: an information item about at least one position of the object or part thereof; an information item about at least one orientation of the object or part thereof; an information item about the geometric shape or outline of the object or part thereof; an information item about the velocity of the object or part thereof; an information item about the acceleration of the object or part thereof; an information item about the presence or absence of the object or part thereof within the visibility range of the detector.

[0089] At least one item of position information can be defined, for example, in at least one coordinate system, for example in which the detector or part thereof is located. Alternatively or additionally, the position information can simply include, for example, a distance between the detector or part thereof and the object or part thereof. Combinations of the above possibilities are also conceivable.

[0090] As outlined above, the at least one longitudinal sensor signal depends on the beam cross section of the light beam in the sensor area of ​​the at least one longitudinal light sensor due to the FiP effect, when the total power of illumination by the light beam is the same. The term "beam cross section" as used herein generally refers to the lateral extent of the light beam or the light spot generated by the light beam at a specific position. If a circular light spot is generated, the radius, the diameter, or the Gaussian beam waist or twice the Gaussian beam waist can serve as a measurement of the beam cross section. If a non-circular light spot is generated, the cross section can be determined in other feasible ways, for example by determining the cross section of a circle having the same area as the non-circular light spot, which is also called the equivalent beam cross section. In this regard, the observation of extrema, i.e. local maxima or minima of the longitudinal sensor signal, can be adopted, especially in the case where a light beam with the smallest possible cross section can strike a corresponding material, such as a photovoltaic material, in which case the material may be located at or near the focus, for example due to the influence of an optical lens. If the extreme value is a maximum, the observation is denoted as a positive FiP effect, whereas if the extreme value is a minimum, the observation is denoted as a negative FiP effect.

[0091] Thus, if the total power of the illumination of the sensor area by the light beam is the same, regardless of the material actually contained in the sensor area, a light beam with a first beam diameter or beam cross-section may generate a first longitudinal sensor signal, whereas a light beam with a second beam diameter or beam cross-section different from the first beam diameter or beam cross-section will generate a second longitudinal sensor signal different from the first longitudinal sensor signal. In this way, by comparing the longitudinal sensor signals, at least one item of information regarding the beam cross-section, in particular the beam diameter, can be generated. For details to this effect, reference can be made to WO2012 / 110924A1. Thus, the longitudinal sensor signals generated by the longitudinal light sensors can be compared in order to obtain information regarding the total power and / or intensity of the light beam and / or to normalize the longitudinal sensor signal and / or at least one item of information regarding the longitudinal position of the object with respect to the total power and / or intensity of the light beam. Thus, as an example, the maximum value of the vertical light sensor signals may be detected and all vertical sensor signals may be divided by the maximum value to generate a normalized vertical light sensor signal, which may then be converted into at least one item of vertical information of the object by using the known relationship described above. Other normalization methods are also applicable, for example the average value of the vertical sensor signals may be used to normalize and all vertical sensor signals may be divided by the average value. Other options are also possible. Each of these options may be suitable to give a conversion independent of the total power and / or intensity of the light beam. Additionally, information regarding the total power and / or intensity of the light beam may be generated in this way.

[0092] Specifically, if one or more beam characteristics of the light beam propagating from the object to the detector are known, at least one item of information regarding the longitudinal position of the object can be derived in this way from a known relationship between at least one longitudinal sensor signal and the longitudinal position of the object. The known relationship can be stored in the evaluation device as an algorithm and / or as one or more calibration curves. As an example, in particular in the case of Gaussian beams, the relationship between the beam diameter or beam waist and the position of the object can be easily derived by using the Gaussian relationship between the beam waist and the ordinate.

[0093] This embodiment can be used in particular in the evaluation device to resolve ambiguities in the known relationship between the beam cross section of the light beam and the longitudinal position of the object. That is, even if the beam characteristics of the light beam propagating from the object to the detector are fully or partially known, it is known that for many beams the beam cross section narrows before reaching the focus and then widens again. That is, before and after the focus, where the beam cross section of the light beam is narrowest, there are positions along the propagation axis of the light beam where the light beam has the same cross section. Thus, as an example, at a distance z0 before and after the focus, the cross section of the light beam is identical. Thus, if only one longitudinal light sensor with a specific spectral sensitivity is used, the specific cross section of the light beam can be determined if the total power or intensity of the light beam is known. By using this information, the distance z0 of each longitudinal light sensor from the focus can be determined. However, in order to determine whether each longitudinal light sensor is located before or after the focus, additional information is required, like the history of the movement of the object and / or the detector and / or information about whether the detector is located before or after the focus. In general situations, this additional information may not be provided. Thus, additional information may be obtained to resolve the above ambiguity. Thus, if the evaluation device recognizes by evaluating the longitudinal sensor signals that the beam cross section of the light beam on the first longitudinal light sensor is larger than the beam cross section of the light beam on the second longitudinal light sensor, the second longitudinal light sensor being arranged behind the first longitudinal light sensor, the evaluation device may determine that the light beam is still narrowed and that the location of the first longitudinal light sensor is located in front of the focus of the light beam. Conversely, if the beam cross section of the light beam on the first longitudinal light sensor is smaller than the beam cross section of the light beam on the second longitudinal light sensor, the evaluation device may determine that the light beam is diverging and that the location of the second longitudinal light sensor is located behind the focus. Thus, in general, the evaluation device may be configured to recognize whether the light beam is diverging or narrowing by comparing the longitudinal sensor signals of different longitudinal sensors.

[0094] For further details regarding determining at least one information item related to the longitudinal position of an object with the aid of an evaluation device according to the invention, reference can be made to the description in WO 2014 / 097181 A1. In general, the evaluation device may thus be configured to compare the beam cross section and / or the diameter of the light beam with known beam properties of the light beam in order to determine at least one information item related to the longitudinal position of the object, preferably from a known dependence of the beam diameter of the light beam in at least one propagation coordinate in the propagation direction of the light beam and / or a known Gaussian profile of the light beam.

[0095] In addition to the at least one longitudinal coordinate of the object, at least one lateral coordinate of the object may also be determined. Thus, in general, the evaluation device may further be configured to determine the at least one lateral coordinate of the object by determining a position of the light beam on at least one lateral light sensor, which may be a pixelated or segmented or large area lateral light sensor as also further described in WO2014 / 097181A1.

[0096] In a particular embodiment of the invention, the detector may include at least two longitudinal light sensors, each of which may be configured to generate at least one longitudinal sensor signal. As an example, the sensor areas or sensor surfaces of the longitudinal light sensors may be oriented parallel, such that a small angular tolerance may be tolerated, for example an angular tolerance of 10 degrees or less, preferably 5 degrees or less. Here, all longitudinal light sensors of the detector, preferably arranged in the form of a stack along the optical axis of the detector, are preferably transparent. Thus, the light beam can preferably pass through a first transparent longitudinal light sensor before subsequently impinging on another longitudinal light sensor. Thus, the light beam from the object can reach all longitudinal light sensors present in the light detector in succession. Here, the different longitudinal light sensors may exhibit the same or different spectral sensitivity with respect to the incident light beam.

[0097] Preferably, the detector according to the invention comprises a stack of longitudinal light sensors as disclosed in WO2014 / 097181A1, in particular in combination with one or more transverse light sensors. As an example, one or more transverse light sensors may be arranged on a side of the stack of longitudinal light sensors facing the object. Alternatively or additionally, one or more transverse light sensors may be arranged on a side of the stack of longitudinal light sensors not facing the object. Also, alternatively or additionally, one or more transverse light sensors may be interposed between the stack of longitudinal light sensors. However, embodiments with only one longitudinal light sensor without a transverse light sensor are still possible, for example when it is only desired to determine the depth of the object.

[0098] Alternatively or additionally, the optical sensor according to the invention may thus be or include a lateral optical sensor. As used herein, the term "lateral optical sensor" generally refers to a device configured to determine the lateral position of at least one light beam traveling from an object to a detector. With regard to the term position, reference may be made to the definition above. Preferably, the lateral position may therefore be or include at least one coordinate in at least one dimension perpendicular to the optical axis of the detector. By way of example, the lateral position may be the position of the light spot generated by the light beam in a plane perpendicular to the optical axis, such as the photosensitive sensor surface of the lateral optical sensor. By way of example, the position in said plane may be given in Cartesian and / or polar coordinates. Other embodiments are also possible. For possible embodiments of the lateral optical sensor, reference may be made to WO2014 / 097181A1. However, other embodiments are also possible and are described in more detail below.

[0099] The lateral optical sensor may provide at least one lateral sensor signal, where the lateral sensor signal may generally be any signal indicative of a lateral position. By way of example, the lateral sensor signal may be or include a digital and / or analog signal. By way of example, the lateral sensor signal may be or include a voltage signal and / or a current signal. Additionally or alternatively, the lateral sensor signal may be or include digital data. The lateral sensor signal may include a single signal value and / or a series of signal values. The lateral sensor signal may further include any signal that may be derived by combining two or more individual signals, for example, by averaging two or more signals and / or forming a quotient of two or more signals.

[0100] In a first embodiment similar to that disclosed by WO2014 / 097181A1, the lateral photosensor is a photodetector having at least one first electrode, at least one second electrode, and at least one photovoltaic material, the photovoltaic material being embedded between the first and second electrodes. Thus, the lateral photosensor can be or include one or more photodetectors, for example one or more organic photodetectors, and most preferably one or more dye-sensitized organic solar cells (DSCs, also called dye solar cells), such as one or more solid-state dye-sensitized organic solar cells (s-DSCs). Thus, the detector can include one or more DSCs (such as one or more sDSCs) acting as at least one lateral photosensor, and one or more DSCs (such as one or more sDSCs) acting as at least one longitudinal photosensor.

[0101] In contrast to this known embodiment, a particularly preferred embodiment of a lateral light sensor according to the invention can comprise a layer of a photoconductive material, preferably an inorganic photoconductive material, such as one of the above and / or below mentioned photoconductive materials. Preferably, the photoconductive material layer is in particular a transparent conductive oxide, preferably indium tin oxide (ITO), fluorine doped tin oxide (SnO2 :F;FTO), or magnesium oxide (MgO), or SrVO 3 Or CaVO 3 or alternatively, metal nanowires, in particular silver nanowires, may be applied directly or indirectly to at least one substrate. However, other materials are also suitable, in particular depending on the desired spectral range of transparency. In certain embodiments, an intermediate layer may be applied, which further comprises an insulating material, a semiconducting material or a conductive material.

[0102] Furthermore, at least two electrodes may be present for recording the transverse sensor signal. In a preferred embodiment, said at least two electrodes are actually arranged in the form of at least two physical electrodes, preferably in a form exhibiting a T-shape, each physical electrode may comprise a conductive material, preferably a metallic conductive material, more preferably a metallic highly conductive material, such as copper, silver, gold, an alloy or a composition comprising these types of materials, or graphene. Here, each of the at least two physical electrodes may be preferably configured in such a way that a direct electrical contact can be achieved between the respective electrode and the photoconductive layer in the optical sensor, in particular for obtaining the longitudinal sensor signal with the least possible losses due to additional resistance in the transport path between the optical sensor and the evaluation device, for example.

[0103] Preferably, at least one of the electrodes of the lateral light sensor may be a split electrode having at least two partial electrodes, the lateral light sensor may have a sensor area, and the at least one lateral sensor signal may indicate the x- and / or y-position of the incident light beam within the sensor area. The sensor area may be a surface of the light detector facing the object. The sensor area may preferably be oriented perpendicular to the optical axis. Thus, the lateral sensor signal may indicate the position of the light spot generated by the light beam within the plane of the sensor area of ​​the lateral light sensor. In general, as used herein, the term "partial electrode" refers to one electrode of a plurality of electrodes, preferably adapted to measure at least one current and / or voltage signal independently from the other partial electrodes. Thus, when a plurality of partial electrodes is provided, each electrode is adapted to provide, via at least two partial electrodes, a plurality of potentials and / or currents and / or voltages, which may be measured and / or used independently.

[0104] The lateral light sensor can further be adapted to generate a lateral sensor signal according to the currents through the partial electrodes. Thus, a ratio of the currents through two horizontal partial electrodes can be formed, thereby generating an x-coordinate, and / or a ratio of the currents through a vertical partial electrode can be formed, thereby generating a y-coordinate. The detector, preferably the lateral light sensor and / or the evaluation device can be configured to derive information about the lateral position of the object from at least one ratio of the currents through the partial electrodes. Other methods of generating a position coordinate by comparison of multiple currents through the partial electrodes are also feasible.

[0105] The partial electrodes may generally be defined in various ways to determine the position of the light beam within the sensor area. Thus, two or more horizontal partial electrodes may be provided to determine the horizontal or x-coordinate, and two or more vertical partial electrodes may be provided to determine the vertical or y-coordinate. Thus, partial electrodes may be provided at the periphery of the sensor area, the interior space of the sensor area remaining free and covered by one or more additional electrode materials. As will be outlined in more detail below, the additional electrode materials may be preferably transparent additional electrode materials, such as transparent metals and / or transparent conductive oxides and / or, most preferably, transparent conductive polymers.

[0106] By using a lateral light sensor, one of the electrodes being a split electrode with three or more partial electrodes, the current through the partial electrodes can depend on the position of the light beam in the sensor area. This can generally be due to the fact that ohmic or resistive losses can occur on the way from the location of charge generation due to light impinging on the partial electrodes. Thus, in addition to the partial electrodes, the split electrodes may include one or more additional electrode materials connected to the partial electrodes, the one or more additional electrode materials resulting in electrical resistance. As a result, due to ohmic losses on the path from the location of charge generation through the one or more additional electrode materials to the partial electrodes, the current through the partial electrodes depends on the location of charge generation and thus on the position of the light beam in the sensor area. For details of this principle of determining the position of the light beam in the sensor area, reference can be made to the physical principles and device options as disclosed in the following preferred embodiments and / or in WO2014 / 097181A1 and the individual references therein.

[0107] The lateral light sensor may thus comprise a sensor area, which may preferably be transparent to the light beam traveling from the object to the detector. The lateral light sensor may thus be adapted to determine the lateral position of the light beam in one or more lateral directions, such as the x-direction and / or the y-direction. To this end, the at least one lateral light sensor may further be adapted to generate at least one lateral sensor signal. The evaluation device may thus be designed to generate at least one item of information regarding the lateral position of the object by evaluating the lateral sensor signal of the vertical light sensor.

[0108] Further embodiments of the present invention have referred to the nature of the light beam propagating from the object to the detector. As used herein, the term "light" generally refers to electromagnetic radiation in one or more of the following spectral ranges: the visible spectral range, the ultraviolet spectral range and the infrared spectral range. Therein, in accordance in part with the ISO-21348 standard in its version effective at the date of this application, the term visible spectral range generally refers to the spectral range of 380 nm to 760 nm. The term infrared (IR) spectral range generally refers to electromagnetic radiation in the range of 760 nm to 1000 μm, of which the range of 760 nm to 1.4 μm is usually designated as the near infrared (NIR) spectral range and the range of 15 μm to 1000 μm is designated as the far infrared (FIR) spectral range. The term ultraviolet spectral range generally refers to electromagnetic radiation in the range of 1 nm to 380 nm, preferably in the range of 100 nm to 380 nm. Preferably, light as used within the scope of the present invention is visible light, i.e. light within the visible spectral range.

[0109] The term "light beam" generally refers to an amount of light emitted in a particular direction. Thus, a light beam can be a bundle of light rays having a certain extent in a direction perpendicular to the light beam's propagation direction. Preferably, the light beam is or can include one or more Gaussian light beams that can be characterized by one or more Gaussian beam parameters, such as one or more beam waists, Rayleigh lengths or any other beam parameters or combinations of beam parameters suitable for characterizing the beam diameter and / or the evolution of the beam propagation in space.

[0110] The light beam may be accepted by the object itself, i.e. may originate from the object. Additionally or alternatively, another source of the light beam may be suitable. Thus, as outlined in more detail below, one or more illumination sources may be provided for illuminating the object, for example by using one or more primary light rays or beams, such as one or more primary light rays or beams having predetermined characteristics. In the latter case, the light beam propagating from the object to the detector may be a light beam reflected by the object and / or a reflecting device connected to the object.

[0111] In addition, the detector may include at least one transfer device, for example an optical lens, in particular one or more refractive lenses, in particular thin convergent refractive lenses such as thin convex lenses or biconvex lenses, and / or one or more convex mirrors, which may further be arranged along a common optical axis. Most preferably, the light beam originating from the object may then first pass through at least one transfer device and then pass through a single transparent light sensor or a stack of transparent light sensors before finally impinging on the imaging device. As used herein, the term "transfer device" refers to an optical element that may be configured to transfer at least one light beam originating from the object to a light sensor in the detector. Thus, the transfer device may be designed to provide the light propagating from the object to the detector to the light sensor, which may optionally be enabled by imaging means of the transfer device or by non-imaging properties of the transfer device. In particular, the transfer device may be designed to collect the electromagnetic radiation before it is provided to the light sensor.

[0112] In addition, at least one transfer device may have imaging properties. Thus, the transfer device has at least one imaging element, such as at least one lens and / or at least one curved mirror, because in the case of such imaging elements, for example, the geometry of the illumination on the sensor area may depend on the relative arrangement, for example, the distance between the transfer device and the object. As used herein, the transfer device may be designed so that the electromagnetic radiation originating from the object is completely transferred to the sensor area, for example, completely focused on the sensor area, especially when the object is located within the visibility range of the detector.

[0113] In general, the detector may further include at least one imaging device, i.e. a device capable of acquiring at least one image. The imaging device may be embodied in various ways. Thus, the imaging device may be part of the detector, for example in the detector housing. Alternatively or additionally, however, the imaging device may be configured outside the detector housing, for example as a separate imaging device. Alternatively or additionally, the imaging device may be connected to the detector or may also be part of the detector. In a preferred configuration, the stack of transparent photosensors and the imaging device are arranged along a common optical axis along which the light beam travels. Thus, the imaging device may be arranged in the optical path of the light beam such that the light beam travels through the stack of transparent longitudinal photosensors until it strikes the imaging device. However, other arrangements are possible.

[0114] As used herein, an "imaging device" is generally understood as a device that can generate an image of an object or a part of an object, in one, two or three dimensions. In particular, the detector, with or without at least one optional imaging device, can be used fully or partially as a camera, such as an IR camera or an RGB camera, i.e. a camera designed to deliver three primary colors designated as red, green and blue in three separate connections. Thus, by way of example, the at least one imaging device can be or include at least one imaging device selected from the group consisting of: a pixelated organic camera element, preferably a pixelated organic camera chip; a pixelated inorganic camera element, preferably a pixelated inorganic camera chip, more preferably a CCD chip or a CMOS chip; a monochrome camera element, preferably a monochrome camera chip; a multi-color camera element, preferably a multi-color camera chip; a full-color camera element, preferably a full-color camera chip. The imaging device can be or include at least one device selected from the group consisting of a monochrome imaging device, a multi-chrome imaging device and at least one full-color imaging device. Multi-chrome and / or full-color imagers may be produced through the use of filter technology and / or through the use of inherent color sensitivity techniques or other techniques, as will be appreciated by those skilled in the art. Imagers may generally exhibit opaque optical properties, particularly in contrast to lateral light sensors as described above. Other embodiments of imagers are possible.

[0115] The imaging device may be designed to image several partial regions of the object successively and / or simultaneously. By way of example, the partial regions of the object may be one-dimensional, two-dimensional or three-dimensional regions of the object, which are determined, for example, by the resolution limit of the imaging device and from which electromagnetic radiation is emitted. In this context, imaging should be understood to mean that the electromagnetic radiation originating from each partial region of the object is supplied to the imaging device, for example by at least one optional transmission device of the detector. The electromagnetic radiation may be generated by the object itself, for example in the form of luminescence radiation. Alternatively or additionally, at least one detector may include at least one illumination source, which illuminates the object.

[0116] In particular, the imaging device may be designed for imaging multiple partial regions in succession, for example by a scanning method using at least one column scan and / or row scan. However, other embodiments are also possible, for example in which multiple partial regions are imaged simultaneously. The imaging device is designed to generate signals, preferably electronic signals, associated with the partial regions during imaging of the partial regions of the object. The signals may be analog and / or digital signals. By way of example, an electronic signal may be associated with each partial region. Thus, the electronic signals may be generated simultaneously or with a time lag. By way of example, during a column or row scan, a sequence of electronic signals corresponding to the partial regions of the object may be generated, which are for example connected in a line. Furthermore, the imaging device may include one or more signal processing devices, for example one or more filters and / or analog-to-digital converters for processing and / or pre-processing the electronic signals.

[0117] The light leaving the object may originate from the object itself, but may optionally have a different origin, and may propagate from this origin to the object and then to the light sensor. The latter case may be influenced, for example, by the use of at least one illumination source. The illumination source may be embodied in various ways. Thus, the illumination source may be part of the detector, for example in the detector housing. Alternatively or additionally, however, the at least one illumination source may also be arranged outside the detector housing, for example as a separate light source. The illumination source may be arranged separately from the object and illuminate the object from a certain distance. Alternatively or additionally, the illumination source may be connected to the object or even be part of the object, whereby, for example, the electromagnetic radiation originating from the object may be directly generated by the illumination source. By way of example, the at least one illumination source may be arranged on the surface and / or inside the object and may directly generate the electromagnetic radiation that illuminates the sensor area. This illumination source may be or include, for example, an ambient light source and / or may be or include, an artificial illumination source. By way of example, at least one infrared emitting device and / or at least one visible light emitting device and / or at least one ultraviolet light emitting device can be arranged on the surface of the object. By way of example, at least one light emitting diode and / or at least one laser diode can be arranged on the surface and / or inside the object. The irradiation source can in particular include one or more of the following irradiation sources: laser, in particular laser diode, although in principle, alternatively or additionally, other types of laser can also be used; light emitting diode; incandescent light bulb; neon light; flame source; heat source; organic light source, in particular organic light emitting diode; structured light source; light source including diffractive optical element, light source including micromirror device such as digital light processor (DLP). Alternatively or additionally, other irradiation sources can also be used. Particularly preferably, the irradiation source is designed such that it generates one or more light beams with a Gaussian beam profile, as is at least approximately the case for example with a large number of lasers. For further possible embodiments of any irradiation source, reference may be made to one of WO2012 / 110924A1 and WO2014 / 097181A1.However, other embodiments are possible.

[0118] The at least one optional irradiation source may generally emit light in at least one of the following: ultraviolet spectral range, preferably in the range of 200 nm to 380 nm; visible spectral range (380 nm to 780 nm); infrared spectral range, preferably in the range of 780 nm to 3.0 μm. Most preferably, the at least one irradiation source is adapted to emit light in the visible spectral range, preferably in the range of 500 nm to 780 nm, most preferably in the range of 650 nm to 750 nm or 690 nm to 700 nm. Here, it is particularly preferred if the irradiation source can exhibit a spectral range that can be related to the spectral sensitivity of the longitudinal sensor, in particular if the longitudinal sensor illuminated by the respective irradiation source can provide a sensor signal of high intensity, thereby allowing a high-resolution evaluation with a sufficient signal-to-noise ratio.

[0119] Furthermore, the detector may also have at least one modulation device for modulation of the illumination, in particular for periodic modulation, in particular for a periodic beam blocking device. Modulation of the illumination should be understood to mean a process of varying the total power of the illumination, preferably periodically, in particular with one or more modulation frequencies. In particular, the periodic modulation may be enabled between a maximum and a minimum value of the total power of the illumination. The minimum value may be zero, but the minimum value may also be greater than zero, for example if there is no need to enable a complete modulation. The modulation may be enabled, for example, in the beam path between the object and the light sensor, for example by at least one modulation device arranged in said beam path. However, alternatively or additionally, the modulation may be effected in the beam path between any illumination source for illuminating the object and the object, for example by at least one modulation device arranged in said beam path, as will be explained in more detail below. A combination of these possibilities is also conceivable. The at least one modulation device may for example comprise a beam chopper or other type of periodic beam blocking device, for example at least one blocking blade or blocking wheel, which preferably rotates at a constant speed and, as a result, can block the illumination periodically. Alternatively or additionally, however, the use of one or more different types of modulation devices is also possible, for example modulation devices based on the electro-optical effect and / or the acousto-optical effect.Alternatively or additionally again, at least one of the irradiation sources itself can be designed to generate modulated irradiation, for example by the irradiation source itself having an intensity and / or total power modulation, for example a periodically modulated total power, and / or the irradiation source is embodied as a pulsed irradiation source, for example a pulsed laser.Therefore, by way of example, at least one modulation device may be fully or partially integrated into the irradiation source.Various possibilities are conceivable.

[0120] The detector can therefore be designed in particular to detect at least two sensor signals in the case of different modulations, in particular at least two longitudinal sensor signals, each with a different modulation frequency. The evaluation device can be designed to generate geometric information from the at least two longitudinal sensor signals. As described in WO2012 / 110924A1 and WO2014 / 097181A1, it is possible to resolve ambiguities and / or take into account the fact that, for example, the total illumination power is generally unknown. By way of example, the detector can also be designed to modulate the illumination of at least one sensor area of ​​the object and / or detector, such as at least one sensor area of ​​at least one optical sensor, with a frequency of 0.05 Hz to 1 MHz, for example 0.1 Hz to 10 kHz. As outlined above, for this purpose the detector may comprise at least one modulation device, which may be integrated into at least one arbitrary illumination source and / or may be independent of the illumination source. Thus, the at least one irradiation source may itself be configured to generate a modulation of the irradiation, and / or there may be at least one independent modulation device, such as at least one chopper and / or at least one device with modulated transmissivity, such as at least one electro-optical device and / or at least one acousto-optical device.

[0121] According to the present invention, it may be advantageous to apply at least one modulation frequency to the photodetector as described above. However, it is still possible to directly determine the longitudinal sensor signal without applying a modulation frequency to the photodetector. As will be explained in more detail below, the application of a modulation frequency may not be necessary under many relevant circumstances for obtaining the desired longitudinal information about the object. As a result, the photodetector may not need to include a modulator in this way, which may further contribute to a simple and cost-effective assembly of the spatial detector. As a further consequence, the spatial light modulator may be used in a time multiplexing mode rather than a frequency multiplexing mode, or in a combination thereof.

[0122] In a further aspect of the invention, an arrangement is proposed comprising at least two separate detectors, preferably two or three separate light sensors, according to any of the above-mentioned embodiments, which may be arranged at two entirely different positions. Here, the at least two detectors preferably have identical optical properties, but can also be different from each other. Furthermore, the arrangement may further comprise at least one illumination source. Here, the at least one object may be illuminated using at least one illumination source generating primary light, and the at least one object elastically or inelastically reflects the primary light, thereby generating a plurality of light beams propagating to one of the at least two detectors. The at least one illumination source may or may not form a constituent part of each of the at least two detectors. By way of example, the at least one illumination source itself may be or include an ambient light source and / or may be or include an artificial illumination source. This embodiment is preferably suitable for applications in which at least two detectors, preferably two identical detectors, are used to obtain depth information, in particular since it provides more measurements than the original measurements of one detector.

[0123] In this regard, the arrangement of the individual optical sensors, preferably apart from other individual optical sensors included in the detector, allows the acquisition of individual images different from the images acquired by the other individual optical sensors. In particular, the arrangement of the individual optical sensors in separate beam paths in a parallel arrangement may generate a single circular three-dimensional image. The individual optical sensors may thus be aligned to be located parallel to the optical axis and may further exhibit individual displacements in a direction perpendicular to the optical axis of the detector. Here, the alignment may be achieved by suitable means, such as adjusting the position and orientation of the individual optical sensors and / or the corresponding transfer elements. Thus, the two individual optical sensors may preferably be spaced apart so that the perception of depth information can be generated or increased, in particular in a manner in which the depth information is obtained by combining visual information obtained from two individual optical sensors with overlapping fields of view, such as visual information obtained by binocular vision. For this purpose, the individual optical sensors may preferably be spaced apart from each other by 1 cm to 100 cm, preferably 10 cm to 25 cm, in a direction determined perpendicular to the optical axis. As used herein, a detector as provided in this embodiment may in particular be part of a "stereoscopic vision system" described in more detail below. In addition to enabling stereoscopic vision, further specific advantages of a stereoscopic vision system based primarily on the use of two or more optical sensors may include, in particular, increased total intensity and / or lower detection thresholds.

[0124] In a further aspect of the present invention, a human-machine interface is proposed for exchanging at least one information item between a user and a machine. The proposed human-machine interface may take advantage of the fact that one or more of the above-mentioned embodiments or the above-mentioned detectors described in more detail below are used by one or more users to provide information and / or instructions to the machine. Thus, preferably, the human-machine interface may be used for inputting control instructions.

[0125] The human-machine interface comprises at least one detector according to the present invention, e.g. one or more of the embodiments disclosed above and / or one or more of the embodiments as disclosed in further detail below, the human-machine interface being designed to generate at least one geometric information of the user by means of the detector, and the human-machine interface being designed to assign the geometric information to at least one information item.

[0126] In a further aspect of the present invention, an entertainment device for performing at least one entertainment function is disclosed. As used herein, an entertainment device is a device that can serve the purpose of leisure and / or entertainment of one or more users, hereinafter also referred to as one or more players. As an example, the entertainment device can serve the purpose of gaming, preferably computer gaming. Additionally or alternatively, the entertainment device can be used for other purposes, such as exercise, sports, physical therapy or general motion tracking. Thus, the entertainment device can be implemented in a computer, computer network or computer system, or can include a computer, computer network or computer system running one or more gaming software programs.

[0127] The entertainment device comprises at least one human-machine interface according to the invention, for example according to one or more embodiments disclosed above and / or according to one or more embodiments disclosed below. The entertainment device is designed in such a way that at least one information item can be input by a player via means of the human-machine interface. The at least one information item may be transmitted to and / or used by a control device and / or a computer of the entertainment device.

[0128] In a further aspect of the present invention, a tracking system for tracking the position of at least one movable object is provided. As used herein, a tracking system is a device adapted to collect information on a series of past positions of at least one object or at least a part of an object. Additionally, the tracking system may be adapted to provide information on at least one predicted future position of at least one object or at least a part of an object. The tracking system may have at least one tracking controller, which may be fully or partially embodied as an electronic device, preferably as at least one data processing device, more preferably as at least one computer or microcontroller. Also, the at least one tracking controller may include at least one evaluation device and / or may be part of the at least one evaluation device and / or may be fully or partially identical to the at least one evaluation device.

[0129] The tracking system includes at least one detector according to the invention, for example as disclosed in one or more of the embodiments listed above and / or as disclosed in one or more of the following embodiments. The tracking system may further include at least one tracking controller. The tracking system may include one or more detectors, in particular two or more identical detectors, whereby reliable depth information can be obtained for at least one object in an overlapping volume between two or more detectors. The tracking controller is configured to track a series of positions of the object, each position including at least one item of information regarding the object's position at a particular time.

[0130] The tracking system may further include at least one beacon device that can be connected to the object. For a possible definition of a beacon device, reference can be made to WO2014 / 097181A1. The tracking system is preferably adapted such that the detector generates information about the location of the object of at least one beacon device, in particular about the location of the object including a specific beacon device exhibiting a specific spectral sensitivity. In this way, multiple beacons exhibiting different spectral sensitivity can be tracked by the detector of the present invention, preferably simultaneously. Here, the beacon device may be embodied as a fully or partially active beacon device and / or a passive beacon device. As an example, the beacon device may include at least one illumination source adapted to generate at least one light beam to be transmitted to the detector. Additionally or alternatively, the beacon device may include at least one reflector adapted to reflect the light generated by the illumination source, thereby generating a reflected light beam to be transmitted to the detector.

[0131] In a further aspect of the present invention, a scanning system for determining at least one position of at least one object is provided. As used herein, a scanning system is a device configured to emit at least one light beam for illuminating at least one dot arranged on at least one surface of the at least one object and generating at least one item of information related to the distance between the at least one dot and the scanning system. To generate at least one item of information related to the distance between the at least one dot and the scanning system, the scanning system comprises at least one detector according to the present invention, such as at least one detector as disclosed in one or more of the embodiments listed above and / or the embodiments below.

[0132] Thus, the scanning system comprises at least one illumination source configured to emit at least one light beam configured to illuminate at least one dot located on at least one surface of at least one object. As used herein, the term "dot" refers to a small area on a part of the surface of the object illuminated by the illumination source, which may be selected, for example, by a user of the scanning system. Preferably, the dot may exhibit, on the one hand, the smallest possible size so that the scanning system can determine as accurately as possible the value of the distance between the illumination source contained in the scanning system and the part of the surface of the object where the dot may be located, and, on the other hand, may exhibit a size as large as possible so that the user of the scanning system or the scanning system itself, in particular the scanning system by an automatic procedure, can detect the presence of the dot in the relevant part on the surface of the object.

[0133] For this purpose, the illumination source may comprise an artificial illumination source, in particular at least one laser source and / or at least one incandescent lamp and / or at least one semiconductor light source, for example at least one light emitting diode, in particular an organic and / or inorganic light emitting diode. Due to the generally defined beam profile and other operational characteristics, it is particularly preferred to use at least one laser light source as the illumination source. Here, the use of a single laser light source is preferred, in particular when it may be important to provide a compact scanning system that is considered easy to store and easy to carry by the user. Therefore, the illumination source may preferably be a constituent part of the detector and therefore may be integrated with the detector, in particular so as to be integrated into the housing of the detector. In a preferred embodiment, the housing of the scanning system in particular may comprise at least one display configured to provide the user with distance-related information, for example in an easy-to-read manner. In a further preferred embodiment, the housing of the scanning system in particular may additionally comprise at least one button configured to operate at least one function related to the scanning system, such as setting one or more operating modes. In a further preferred embodiment, in particular the housing of the scanning system may additionally comprise at least one fixing unit configured to fix the scanning system to another surface, such as rubber feet, a base plate or a wall holder comprising a magnetic material, in particular to improve the accuracy of the distance measurement and / or the ease of handling of the scanning system by the user.

[0134] In a particularly preferred embodiment, the illumination source of the scanning system may thus emit a single laser beam arranged to illuminate a single dot located on the surface of the object. By using at least one of the detectors according to the invention, at least one item of information can be generated which relates to the distance between the at least one dot and the scanning system. Thereby, preferably, the distance between the illumination system contained in the scanning system and the single dot generated by the illumination source may be determined, such as by using an evaluation device contained in the at least one detector. However, the scanning system may further comprise an additional evaluation system which may be particularly adapted for this purpose. Additionally or alternatively, the size of the scanning system, in particular the size of the housing of the scanning system, may be taken into account, and thus the distance between a particular point of the housing surface, such as the front or rear end of the housing of the scanning system, and the single dot is alternatively determined.

[0135] Alternatively, the illumination source of the scanning system can emit two separate light beams configured to provide a respective angle, such as a right angle, between the emission directions of the beams, so that two separate dots located on the surface of the same object or two different surfaces of two separate objects can be illuminated. However, other values ​​for the respective angles between the two separate light beams are also feasible. This feature can be particularly employed for indirect measurement functions, such as the derivation of an indirect distance that may not be directly accessible due to the presence of one or more obstacles between the scanning system and the dot, or that may otherwise be difficult to reach. Thus, by way of example, the determination of the height value of an object is suitable, by measuring two separate distances and deriving the height by use of the Pythagorean theorem. In order in particular to be able to maintain a predetermined levelness with respect to the object, the scanning system can further include at least one leveling unit, in particular an integrated bubble vial, which can be used by the user to maintain the predetermined level.

[0136] As a further option, the illumination source of the scanning system may emit a plurality of individual laser beams, e.g. an array of laser beams, which exhibit an individual pitch, e.g. a regular pitch, relative to one another and are arranged to generate an array of dots located on at least one surface of at least one object. For this purpose, specially adapted optical elements, e.g. beam splitting devices and mirrors, may be provided, which may enable the generation of the described array of laser beams.

[0137] In this way, the scanning system may provide a static arrangement of one or more dots arranged on one or more surfaces of one or more objects. Alternatively, the illumination source of the scanning system, in particular the above-mentioned array of laser beams, may be configured to provide one or more light beams that exhibit a time-varying intensity and / or whose emission direction may alternate over time. In this way, the illumination source may be configured to scan a portion of at least one surface of at least one object as an image by using one or more light beams with alternating characteristics generated by at least one illumination source of the scanning device. In particular, the scanning system may thus use at least one column scan and / or row scan to scan, for example, one or more surfaces of one or more objects, successively or simultaneously.

[0138] In a further aspect of the present invention, a stereoscopic vision system is provided for generating at least one single circular three-dimensional image of at least one object. As used herein, the stereoscopic vision system disclosed above and / or below may comprise at least two FiP sensors as optical sensors, a first FiP sensor may be included in a tracking system, in particular a tracking system according to the present invention, while a second FiP sensor may be included in a scanning system, in particular a scanning system according to the present invention. Here, the FiP sensors may be arranged in parallel, preferably in separate beam paths, for example by aligning the FiP sensors parallel to the optical axis and displacing them vertically individually with respect to the optical axis of the stereoscopic vision system. In this way, the FiP sensors can generate or increase the perception of depth information, in particular by obtaining depth information by a combination of visual information derived from individual FiP sensors having overlapping fields of view and preferably sensitive to individual modulation frequencies. For this purpose, the individual FiP sensors may preferably be spaced apart from each other by a distance of 1 cm to 100 cm, preferably 10 cm to 25 cm, as determined in a direction perpendicular to the optical axis. In this preferred embodiment, the tracking system is used to determine the position of the modulated active target, while a scanning system, projecting one or more dots onto one or more surfaces of one or more objects, is used to generate at least one item of information relating to the distance between at least one dot and the scanning system. In addition, the stereoscopic vision system may further include a separate position sensing device adapted to generate an item of information relating to the lateral position of at least one object in the image as described elsewhere in this application.

[0139] In addition to enabling stereoscopic vision, further particular advantages of a stereoscopic vision system based primarily on the use of multiple optical sensors include, in particular, an increase in the total intensity and / or a lower detection threshold. Moreover, in a conventional stereoscopic vision system including at least two conventional position sensing devices, corresponding pixels in the respective images must be determined by applying a significant amount of calculations, whereas in a stereoscopic vision system according to the invention including at least two FiP sensors, corresponding pixels in the respective images recorded by using the FiP sensors (where each FiP sensor can operate at a different modulation frequency) can be clearly assigned to each other. In this way, it can be emphasized that the stereoscopic system according to the invention can generate at least one item of information regarding the longitudinal position of an object as well as at least one item of information regarding the lateral position of the object with little effort.

[0140] For further details of the stereoscopic vision system, reference can be made to the descriptions of the tracking system and the scanning system, respectively.

[0141] In a further aspect of the present invention, a camera for imaging at least one object is disclosed.

[0142] The camera includes at least one detector of the present invention, for example as disclosed in one or more embodiments further detailed above or below. In particular, the detector may be part of a photographic device, in particular a digital camera. In particular, the detector may be used for 3D photography, in particular digital 3D photography. Thus, the detector forms or may be part of a digital 3D camera. As used herein, the term "photography" generally refers to a technique for acquiring image information of at least one object. As further used herein, "camera" generally refers to a device configured to perform photography. As further used herein, the term "digital photography" generally refers to a technique for acquiring image information of at least one object by the use of a plurality of photosensitive elements adapted to generate an electrical signal, preferably a digital electrical signal, indicative of the intensity of illumination. As further used herein, the term "3D photography" generally refers to a technique for acquiring image information of at least one object in a three-dimensional space. Thus, a 3D camera refers to a device adapted to perform 3D photography. A camera may generally be adapted to acquire a single image, such as a single 3D image, or may be adapted to acquire a plurality of images, such as a series of images. Thus, the camera may also be a video camera adapted for video applications, such as for acquiring digital video sequences.

[0143] Thus, in general, the present invention further refers to a camera, in particular a digital camera, more particularly a 3D camera or a digital 3D camera, for imaging at least one object. As outlined above, the term "imaging", as used herein, generally refers to the acquisition of image information of at least one object. The camera comprises at least one detector according to the present invention. The camera, as outlined above, may be adapted for the acquisition of a single image or for the acquisition of multiple images, such as an image sequence, preferably a digital video sequence. Thus, by way of example, the camera may be or include a video camera. In the latter case, the camera preferably includes a data memory for storing the image sequence.

[0144] In a further aspect of the invention, a method for manufacturing an optical sensor is disclosed, which method is preferably used for producing or manufacturing at least one optical sensor according to the invention, such as at least one optical sensor of one or more embodiments disclosed elsewhere in this document as described in more detail below. For any embodiment of the method, reference may therefore be made to the description of the various embodiments of the optical sensor.

[0145] The method includes the following steps, which may be performed in the order given or in a different order. Additionally, additional method steps not listed may be provided. Unless otherwise specified, two or more, or even all, of the method steps may be performed at least partially simultaneously. Further, two or more, or even all, of the method steps may be performed repeatedly two or more times.

[0146] The method according to the present invention comprises the steps of: a) providing at least one layer of photoconductive material; b) thereafter applying at least one precursor adapted to react to at least one metal-containing compound, whereby the metal-containing compound is deposited as an amorphous cover layer on the layer of photoconductive material; and c) thereafter heat treating the amorphous cover layer; Here, at least two electrical contacts are further provided in electrical contact with the layer of photoconductive material.

[0147] According to step a), at least one layer of photoconductive material is provided. In particular, the photoconductive material can be selected from the list of photoconductive materials as presented above. For further details regarding the manufacture of the layer of photoconductive material, reference can be made to the description of FIG. 3 below.

[0148] According to step b), at least one precursor adapted to react to a metal-containing compound is then applied to the layer of photoconductive material, whereby the at least one metal-containing compound is deposited as an amorphous cover layer on the photoconductive material. As mentioned above, the at least one metal-containing compound may include, in particular, a metal, and the metal may be, in particular, lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), carbon monoxide (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), cesium (Cs), barium (Ba), lanthanum (La). , Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), Hafnium (Hf), Tantalum (Ta), Tungsten (W), The metal-containing compound may be selected from the group consisting of arsenic (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl) and bismuth (Bi), with the metallic aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf) and tungsten (W) being particularly preferred. In certain embodiments, the metal-containing compound may alternatively comprise a semimetal or metalloid selected from the group consisting of boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb) and tellurium (Te).Here, the at least one metal-containing compound is preferably selected from the group comprising oxide, hydroxide, chalcogenide, pnictide, carbide, or a combination thereof.Accordingly, in a particularly preferred embodiment, the at least one metal-containing compound can be selected from at least one oxide, at least one hydroxide, or a combination thereof of aluminum (Al), titanium (Ti), zirconium (Zr) or hafnium (Hf), or a nitride of silicon (Si).

[0149] In a further preferred embodiment, step b) is repeated at least once, preferably at least 10 times, more preferably at least 100 times. Here, the same precursors, adapted to react up to the same metal-containing compound, can be used for each repetition. In a special embodiment, at least two adjacent layers can be deposited in the form of a stack. Here, the term "stack" can refer to a deposition mode in which adjacent layers can differ with respect to their respective composition. Thus, adjacent layers can differ in that they contain different metal-containing compounds. Alternatively, other types of compounds, in particular at least one metal compound, polymeric compound, silicone compound, glass compound, may be used in some, but not all, of the adjacent layers, for example alternating with layers containing metal-containing compounds. Preferably, at least one metal-containing compound, and other types of compounds, if applicable, are deposited on the photoconductive material until a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, most preferably 50 to 75 nm is achieved. Here, at least one metal-containing compound, and, if applicable, other types of compounds, are deposited on the photoconductive material such that the cover layer is preferably a conformal layer with respect to the adjacent surface of the photoconductive material.

[0150] Thus, the thickness of the conformal layer can conform to the corresponding surface of the photoconductive material over at least 90%, preferably at least 95%, and most preferably at least 99% of the surface of the cover layer, within a deviation of ±50 nm, preferably ±20 nm, and most preferably ±10 nm.

[0151] In a particularly preferred embodiment of the present invention, at least one deposition method is used to deposit the metal-containing compound on the photoconductive material. Preferably, the deposition method can be selected from at least one of an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a sputtering process, or a combination thereof. For further details regarding the ALD process or the CVD process, reference can be made to the above description. For the purpose of providing the metal-containing compound, two different types of precursors can be preferably used, where the first precursor is or comprises an organometallic precursor, and the second precursor is or comprises a fluid. As commonly used, the term "fluid" may refer to the non-solid state of the second precursor. As an example, to provide an aluminum (Al)-containing compound, the first precursor is TMA, i.e., trimethylaluminum Al(CH 3 ) 3 while the second precursor is or comprises H 2 Alternatively or additionally, to provide a zirconium (Zr)-containing compound, the first precursor may be or include TDMA-Zr, i.e., tetrakis(dimethylamido)zirconium(IV), and the second precursor may be H 2 O, a solution thereof or ozone. Here, in order to provide a particularly stable fluid flow, at least one precursor may be or may contain an inert gas, in particular nitrogen (N 2 ) or mixed with argon (Ar).

[0152] As already mentioned above, at least one additional layer can be further deposited on the cover layer or a partition thereof. Alternatively or additionally, at least one additional layer can be at least partially deposited on the layer of photoconductive material and subsequently covered by the cover layer. Here, the additional layer can be selected to be or include at least one of an anti-reflection layer, an optical filter layer, an encapsulation layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high-dielectric layer, or a conductive layer.

[0153] According to method step c), the sample comprising the amorphous cover layer deposited on the photoconductive material is subsequently subjected to a heat treatment. For this purpose, a temperature between 20 ° C. and 300 ° C., preferably between 50 ° C. and 200 ° C., is applied to the sample as a heat treatment. Here, at least one of method steps b) and c) may thus preferably be carried out in a vacuum chamber, and in a particularly preferred embodiment, both method steps b) and c) are carried out in the same vacuum chamber, in particular without removing any of the sample between method steps b) and c). As a result of the heat treatment according to method step c), an influence on the photoconductivity of the photoconductive material, in particular an improvement of the photon-induced conductivity of the photoconductive material, is most preferably observed in the samples produced according to the method according to the invention.

[0154] As mentioned above, the desired light sensor is generally designed to generate at least one sensor signal such that a sensor area contained in the light sensor is responsive to illumination by an incident light beam. For this purpose, at least two electrical contacts adapted to be in electrical contact with the photoconductive material contained in the sensor area are further provided. Generally, the electrical contacts can be provided before or during any one of the method steps a) to c). In a particularly preferred embodiment, the electrical contacts can be provided before step a) by providing a vapor-deposited metal layer, for example by known deposition techniques, where the metal layer can in particular comprise one or more of silver, aluminum, platinum, magnesium, chromium, titanium, gold, or graphene. Alternatively, the electrical contacts can be provided by a galvanic or chemical deposition process, such as electroless Ni, electroless Au, galvanic Ni, or galvanic Au. Here, a cover layer may be deposited so as to be able to completely or partially cover the electrical contacts. In this particular embodiment, the electrical contacts are at least partially, preferably completely, covered by the cover layer and can therefore be bonded to at least one external connection by using a conductive lead, preferably in the form of a wire, in particular in the form of a Au, Al or Cu wire, where the conductive lead can in particular be bonded to the electrical contacts through the cover layer. As an example, Au contacts covered by a cover layer are subsequently contacted by wire bonding.

[0155] Additionally, further details regarding methods of producing the optical sensors can be found elsewhere in this document.

[0156] The devices of the present invention can be used in conjunction with surface mount technology packages, such as bumped chip carriers, ceramic leadless chip carriers, leadless chip carriers, leaded chip carriers, lead ceramic chip carriers, dual leadless chip carriers, plastic leaded chip carriers, package-on-package chip carriers, and the like. Furthermore, the device according to the invention may be mounted on semiconductor packages using standard through-hole or source mount technology, such as DO-204, DO-213, Metal Electrode Leafless Surface, DO-214, SMA, SMB, SMC, GF1, SOD, SOT, TSOT, TO-3, TO-5, TO-8, TO-18, TO-39, TO-46, TO-66, TO-92, TO-99, TO-100, TO-126, TO-220, TO-226, TO-247, TO252, TO-263, TO-263 THIN, SIP, SIPP, DFN, DIP, DIL, FlatPack, SO, SOIC, SOP, SSOP, TSOP, TSSOP, ZIP, LCC, PLCC, QFN, QFP, QUIP, QUIL, BGA, eWLB, LGA, PGA, COB, COF, COG, CSP, Flip The device may be used in combination with a flat package such as a chip, PoP, QP, UICC, WL-CSP, WLP, MDIP, PDIP, SDIP, CCGA, CGA, CERPACK, CQGP, LLP, LGA, LTCC, MCM, MICRO SMDXT, or the like. Furthermore, the device may be used in combination with a pin grid array (PGA) such as an OPGA, FCPGA, PAC, PGA, CPGA, or the like. Furthermore, the device may be used in combination with a flat package such as a CFP, CQFP, BQFP, DFN, ETQFP, PQFN, PQFP, LQFP, QFN, QFP, MQFP, HVQFP, SIDEBRAZE, TQFP, TQFN, VQFP, ODFN, or the like.Furthermore, the device according to the invention can be used in combination with SOP, CSOP MSOP, PSOP, PSON, PSON, QSOP, SOIC, SSOP, TSOP, TSSOP, TVSOP, μMAX, WSON, etc. or such small outline packages. Furthermore, the device according to the invention can be used in combination with CSP, TCSP, TDSP, MICRO SMD, COB, COF, COG, etc. or such chip scale packages. Furthermore, the device according to the invention can be used in combination with FBGA, LBGA, TEPBGA, CBGA, OBGA, TFBGA, PBGA, MAP-BGA, UCSP, μBGA, LFBGA, TBGA, SBGA, UFBGA, etc. or such ball grid arrays. Furthermore, the device according to the invention can be used in combination with further electronics such as chips in SIP, POP, 3D-SiC, WSI, near field communication, etc. or such multi-chip packages. For more information on integrated circuit packing, the following sources can be consulted:

[0157] -https: / / en.wikipedia.org / wiki / List_of_integrated_circuit_packaging_type or -https: / / en.wikipedia.org / wiki / List_of_integrated_circuit_package_dimensions

[0158] In a further aspect of the invention, the use of the detector according to the invention is disclosed, where the use of the detector for the purpose of determining the position of an object, in particular the lateral position of an object, where the detector may preferably be used simultaneously as at least one longitudinal light sensor or combined with at least one additional longitudinal light sensor, is proposed in particular for the purpose of use selected from the group consisting of: position measurement, in particular in traffic technology; entertainment applications; security applications; human-machine interface applications; tracking applications; scanning applications; stereoscopic applications; photography applications; imaging applications or camera applications; mapping applications for generating at least one map of a space; homing or tracking beacon detectors for vehicles; position measurement of objects with thermal characteristics (hotter or cooler than the background); machine vision applications; robotics applications.

[0159] In general, therefore, the device according to the invention, such as a detector, can be applied in various fields of application. In particular, the detector can be applied to a use selected from the group consisting of: position measurement in traffic technology; entertainment applications; security applications; human-machine interface applications; tracking applications; photography applications; cartography applications; mapping applications for generating at least one map of space; homing or tracking beacon detectors for vehicles; mobile applications; webcams; audio equipment; Dolby Surround Audio Systems; computer peripherals; gaming applications; camera or video applications; surveillance applications; automotive applications; transport applications; logistics applications; vehicle applications; airplane applications; ship applications; spacecraft applications; robot applications; medical applications; sports applications; building applications; construction applications; manufacturing applications; machine vision applications; use in combination with at least one sensing technology selected from time-of-flight detectors, radar, lidar, ultrasonic sensors, or interferometry. Additionally or alternatively, applications in local and / or global positioning systems, particularly landmark-based positioning and / or navigation, particularly for use by automobiles and other vehicles (trains, motorcycles, bicycles, cargo trucks, etc.), robots, or for use by pedestrians, etc. Furthermore, indoor positioning systems have potential applications such as robots used in the home and / or in manufacturing, logistics, surveillance, or maintenance technology.

[0160] Thus, firstly, the device according to the invention can be used in mobile phones, tablet computers, laptops, smart panels or other fixed or mobile or wearable computing or communication applications. The device according to the invention can therefore be combined with at least one active light source, such as a light source emitting light in the visible or infrared spectral range, to improve performance. Thus, by way of example, the device according to the invention can be used as a camera and / or sensor, in combination with mobile software for scanning and / or detecting the environment, objects and living things. The device according to the invention can even be combined with a 2D camera, such as a conventional camera, to improve the imaging effect. The device according to the invention can furthermore be used for monitoring and / or recording, in particular in combination with voice and / or gesture recognition, or as an input device for controlling a mobile device. Thus, in particular, the device according to the invention acting as a human-machine interface, also called an input device, can be used in mobile applications, such as controlling other electronic devices or components via a mobile device, such as a mobile phone. By way of example, a mobile application comprising at least one device according to the invention may be used to control a television set, a game console, a music player or device or other entertainment device.

[0161] Furthermore, the device according to the invention can be used in a webcam or other peripheral device for computer applications. Thus, by way of example, the device according to the invention can be used in combination with software for imaging, recording, monitoring, scanning or motion detection. As outlined with respect to human-machine interface and / or entertainment devices, the device according to the invention is particularly useful for giving instructions by facial and / or bodily expressions. The device according to the invention can be combined with other input generating devices such as a mouse, keyboard, touchpad, microphone, etc. Furthermore, the device according to the invention can be used in gaming applications, for example using a webcam. Furthermore, the device according to the invention can be used for virtual training applications and / or video conferencing. Furthermore, the device according to the invention can be used to recognize or track hands, arms or objects used in virtual or augmented reality applications, especially when wearing a head-mounted display.

[0162] Furthermore, the device according to the invention may be used in mobile audio devices, television devices and gaming devices, as partially described above. In particular, the device according to the invention may be used as a control or control device for electronic devices, entertainment devices or the like. Furthermore, the device according to the invention may be used for eye detection or gaze measurement, such as in 2D and 3D display technologies, especially for augmented reality applications and / or with transparent displays to recognize whether and / or from which viewpoint the display is being viewed. Furthermore, devices according to the invention may be used to explore rooms, boundaries and obstacles in connection with virtual or augmented reality applications, particularly when wearing a head mounted display.

[0163] Furthermore, the device according to the invention can be used in or as a digital camera, such as a DSC camera, and / or in or as a reflex camera, such as an SLR camera, for which reference can be made to the use of the device according to the invention in mobile applications, such as mobile phones, as disclosed above.

[0164] Furthermore, the device according to the invention can be used for security or surveillance applications. Thus, by way of example, at least one device according to the invention can be combined with one or more digital and / or analog electronic devices that emit a signal if an object is in or outside a given area (e.g. for bank or museum surveillance applications). In particular, the device according to the invention can be used for optical encryption. Detection by use of at least one device according to the invention can be combined with other detection devices such as IR, X-ray, UV-VIS, radar or ultrasonic detectors to complement the wavelengths. The device according to the invention can furthermore be combined with an active infrared light source to enable detection in low light environments. The device according to the invention is generally advantageous compared to active detector systems, in particular because the device according to the invention avoids actively transmitting a signal that may be detected by a third party, as is the case for example for radar applications, ultrasonic applications, LIDAR or similar active detection devices. Thus, in general, the device according to the invention can be used for tracking of unrecognizable and undetectable moving objects. Furthermore, the device according to the invention generally requires less manipulation and stimulation compared to conventional devices.

[0165] Furthermore, given the ease and accuracy of 3D detection by using the device according to the invention, the device according to the invention can be used in general for face, body and person recognition and authentication. In that, the device according to the invention can be combined with other detection means for identification or personalization purposes, such as passwords, fingerprints, iris detection, voice recognition or other means. Thus, in general, the device according to the invention can be used in security devices and other personalization applications.

[0166] Furthermore, the device according to the invention can be used as a 3D barcode reader for product authentication.

[0167] In addition to the security and surveillance applications mentioned above, the device according to the invention can be used for surveillance and monitoring of spaces and areas in general. Thus, the device according to the invention can be used to survey and monitor spaces and areas, and, by way of example, to trigger or activate alarms in case of violation of prohibited areas.

[0168] Thus, in general, the device according to the invention can be used for surveillance purposes in buildings or in museums, optionally in combination with other types of sensors, for example in combination with motion or thermal sensors, in combination with image intensifiers or enhancers and / or photomultipliers, etc. Furthermore, the device according to the invention can be used in public or crowded spaces to detect potentially dangerous activities where crimes are committed, such as theft in car parks or abandoned objects such as abandoned luggage at airports.

[0169] Furthermore, the device according to the invention can be advantageously applied in camera applications, such as video and camcorder applications. Thus, the device according to the invention can be used for motion capture and 3D movie recording. There, the device according to the invention generally provides a number of advantages over conventional optical devices. Thus, the device according to the invention generally requires less complexity of the optical components. Thus, by way of example, the number of lenses can be reduced compared to conventional optical devices, for example by providing a device according to the invention with only one lens. Due to the reduced complexity, very compact devices are possible, such as for mobile applications. Conventional optical systems with two or more lenses of high quality are generally bulky, since bulky beam splitters are generally required. Furthermore, the device according to the invention can generally be used for focus / autofocus devices, such as autofocus cameras. Furthermore, the device according to the invention can also be used for optical microscopy, in particular confocal microscopy.

[0170] Furthermore, the device according to the invention is generally applicable in the technical fields of automotive technology and transport technology. Thus, by way of example, the device according to the invention can be used as a distance and monitoring sensor, such as in adaptive cruise control, emergency brake assist, lane departure warning, surround view, blind spot detection, traffic sign detection, traffic sign recognition, lane recognition, rear crossing traffic warning, light source recognition for adjusting headlight intensity and range depending on the direction of travel or on vehicles traveling ahead, adaptive front light systems, automatic control of high beam headlights, adaptive cut-off lights in front light systems, glare-free high beam front lighting systems, marking animals, obstacles, etc. by headlight irradiation, rear crossing traffic warning, other driver assistance systems such as advanced driver assistance systems, or other automotive and traffic applications. Furthermore, the device according to the invention can be used in driver assistance systems that may be adapted to predict the driver's maneuvers in advance, in particular for collision avoidance. Furthermore, the device according to the invention can also be used for speed and / or acceleration measurement, such as by analyzing the first and second time derivatives of the position information obtained by using the detector according to the invention. This feature may be generally applicable to automotive technology, transport technology or general traffic technology. Applications in other technical fields are also possible. A particular application in indoor positioning systems is the detection of the passenger's position during transportation, and more particularly the electronic control of the use of safety systems such as airbags, where the use of the airbag can be particularly prevented if the passenger is located in the vehicle in such a way that the use of the airbag may cause injury, particularly serious injury, to the passenger. Furthermore, in vehicles such as cars, trains, planes, and especially in autonomous vehicles, the device according to the invention can be used to determine whether the driver is paying attention to the traffic or is distracted, or asleep, or tired, or unable to drive due to the intake of alcohol or drugs.

[0171] In these or other applications, the device according to the invention can generally be used in combination with other sensor devices, such as a stand-alone device or in combination with radar and / or ultrasonic devices. In particular, the device according to the invention can be used for autonomous driving and safety issues. Furthermore, in these applications, the device according to the invention can be used in combination with infrared sensors, radar sensors that are sonic sensors, two-dimensional cameras or other types of sensors. In these applications, the generally passive nature of the device according to the invention is advantageous. Thus, the device according to the invention generally does not need to emit a signal, which avoids the risk of active sensor signals interfering with other signal sources. The device according to the invention can specifically be used in combination with recognition software, such as standard image recognition software. Thus, signals and data such as those provided by the device according to the invention are typically easier to process and therefore generally require less computational power than established stereoscopic vision systems such as LIDAR. Given the low space requirements, the device according to the invention, such as a camera, can be placed virtually anywhere in the car, such as on or behind the window screen, on the front hood, on the bumper, on the lights, on the mirrors or elsewhere. Various detectors according to the invention, such as one or more detectors based on the effects disclosed within the scope of the invention, can be combined, for example, to enable autonomous vehicles or to increase the performance of active safety concepts.

[0172] Thus, various devices according to the invention may be combined with one or more other devices according to the invention and / or conventional sensors on windows, such as rear windows, side windows or front windows, on bumpers or on lights, etc.

[0173] A combination of at least one device according to the invention, such as at least one detector according to the invention, with one or more rain detection sensors is also possible. This is due to the fact that the device according to the invention is generally more advantageous than conventional sensor technologies such as radar, especially during heavy rain. The combination of at least one device according to the invention with at least one conventional sensing technology, such as radar, may enable the software to choose the right combination of signals according to the weather conditions.

[0174] Furthermore, the device according to the invention can generally be used as a brake assist and / or parking assist and / or for speed measurement, which can be integrated into the vehicle or can be used externally to the vehicle, such as for measuring the speed of other vehicles in traffic control. Furthermore, the device according to the invention can be used to detect vacant parking spaces in a parking lot.

[0175] Furthermore, the device according to the invention can be used for vision in general, and in particular for viewing under difficult visibility conditions, such as night vision, fog vision or fume vision. To this end, the photodetector can be sensitive within (at least within) a wavelength range in which small particles, such as those present in smoke or haze, or small droplets, such as those present in fog, mist or haze, do not reflect the incident light beam or reflect only a small part of it. As is generally known, if the wavelength of the incident beam exceeds the size of the particle or droplet, respectively, the reflection of the incident light beam is small or negligible. Furthermore, night vision can be enabled by detecting thermal radiation being emitted by bodies and objects. The photodetector can therefore be particularly sensitive within the infrared (IR) spectral range, preferably the near infrared (NIR) spectral range, and therefore enable good visibility even at night, in haze, smoke, fog, mist or mist.

[0176] Furthermore, the device according to the invention can be used in the fields of medical systems and sports. Thus, in the field of medical technology, surgical robotics, for example for use in endoscopy, the device according to the invention requires a small volume and can be integrated into other devices, as outlined above. In particular, the device according to the invention, having at most one lens, can be used to capture 3D information in medical devices such as endoscopes. Furthermore, the device according to the invention can be combined with suitable monitoring software to allow tracking and analysis of movements. This allows the position of a medical device, such as an endoscope or scalpel, to be instantly superimposed from the results of medical imaging, such as from magnetic resonance imaging, X-ray imaging, or ultrasound imaging. These applications are particularly valuable in medicine, where precise location information is important, such as in brain surgery, long-distance diagnostics, and remote medicine. Furthermore, the device according to the invention can be used for three-dimensional body scanning. Body scanning can be applied in medical environments, such as dental surgery, plastic surgery, bariatric surgery, or cosmetic surgery, or in medical diagnostic environments, such as the diagnosis of myofascial pain syndromes, cancer, body dysmorphic disorders, or further diseases. Body scanning may further be applied in the field of sports to evaluate the ergonomic use or suitability of sports equipment.

[0177] Body scanning may further be used in a clothing environment, such as to determine the proper size and fit of clothing. The technology may also be used in a custom clothing environment, or in an environment for ordering clothing or shoes from the Internet, or in a self-service shopping device, such as a micro-kiosk device or a customer concierge device. Body scanning in a clothing environment is particularly important for scanning a customer who is fully clothed.

[0178] Furthermore, the device according to the present invention can be used in the context of people counting systems, such as counting the number of people in an elevator, train, bus, car, or airplane, or passing through a hallway, door, passageway, retail store, stadium, entertainment venue, museum, library, public place, cinema, theater, etc. Furthermore, the 3D function in a people counting system can be used to obtain or estimate further information about the people being counted, such as height, weight, age, physical strength, etc. This information can be used for business intelligence metrics and / or for optimization to make the area where people are counted more attractive or safe.

[0179] In a retail environment, the device according to the invention in a people counting environment can be used to recognize returning or crossing customers, evaluate shopping behavior, evaluate the percentage of visitors who have made a purchase, optimize staff movements, and monitor the mall's costs per visitor. Furthermore, the people counting system may be used for anthropometric surveys. Furthermore, the device according to the invention can be used in public transport systems to automatically charge passengers according to the length of their journey. Furthermore, the device according to the invention can be used in children's playgrounds to recognize injured children or children performing dangerous behaviors, to enable further interaction with playground toys, to ensure safe use of playground toys, etc.

[0180] Furthermore, the device according to the invention can be used in construction tools such as range finders for determining the distance to an object or wall, for assessing whether a surface is flat, for aligning or placing objects in the correct order, or as an inspection camera for use in a construction environment, etc.

[0181] Furthermore, the device according to the present invention can be applied in the field of sports and exercise, such as training, remote instruction or competition purposes. Specifically, the device according to the present invention can be applied in the fields of dancing, aerobics, football, soccer, basketball, baseball, cricket, hockey, athletics, swimming, polo, handball, volleyball, rugby, sumo, judo, fencing, boxing, golf, car racing, laser tag, battlefield simulation, etc. The device according to the present invention can be used to detect the position of balls, bats, swords, movements, etc. in both sports and matches, and can be used to monitor matches, assist referees, or make judgments, especially for automatic judgment of certain situations in sports, such as determining whether a point or goal has actually been made.

[0182] Furthermore, the device according to the invention may be used in fields such as auto racing or car driver training or car safety training to determine the position of a car or the course of a car or deviations from a previous course or an ideal course, etc.

[0183] The device according to the invention may further be used to support the practice of musical instruments, in particular distance learning, for example string instruments such as a fiddle, violin, viola, harp, bass, harp, guitar, banjo or ukulele, or keyboard instruments such as a piano, organ, keyboard, harpsichord, harmonium or accordion, and / or percussion instruments such as drums, timpani, marimba, xylophone, vibraphone, bongos, congas, timbales, djembes or tabla.

[0184] The device according to the invention can furthermore be used in rehabilitation and physiotherapy to facilitate training and / or to study and correct movements, in which the device according to the invention can also be applied in remote diagnostics.

[0185] Furthermore, the device according to the invention can be applied in the field of machine vision. Thus, one or more devices according to the invention can be used, for example, as passive control devices for autonomous navigation and working robots. In combination with a mobile robot, the device according to the invention can enable autonomous movement and / or autonomous detection of component failures. The device according to the invention can also be used for manufacturing and safety monitoring, for example to avoid accidents, including but not limited to collisions between robots and manufacturing parts and living organisms. In robotics, a safe and direct interaction between the human body and the robot is often problematic, since the robot can cause serious damage to the human body when the human is not recognized. The device according to the invention can help the robot to position objects and humans better and faster, allowing a safe interaction. Given the passive nature of the device according to the invention, the device according to the invention has an advantage over active devices and / or can be used to complement existing solutions such as radar, ultrasound, 2D cameras, IR detection, etc. One particular advantage of the device according to the invention is the low probability of signal interference. Thus, several sensors can operate simultaneously in the same environment without the risk of signal interference. Thus, the device according to the invention may be useful in general in highly automated manufacturing environments, for example but not limited to automotive, mining, steel, etc. The device according to the invention may also be used for quality control in production, for example in combination with other sensors such as 2-D imaging, radar, ultrasound, IR, etc. for quality control and other purposes. Furthermore, the device according to the invention may be used for the evaluation of surface quality, for example to investigate the uniformity of the surface of a product or the following of certain dimensions, from the micrometer range to the meter range. Other quality control applications are also possible. In a manufacturing environment, the device according to the invention is particularly useful for processing natural products such as food or wood, which have a complex three-dimensional structure, avoiding large amounts of waste. Furthermore, the device according to the invention may be used to monitor the filling levels of tanks, silos, etc.

[0186] Additionally, the apparatus according to the present invention may be used to inspect complex products for missing parts, incomplete parts, loose parts, low quality parts, etc., for example, automated optical inspection of printed circuit boards, inspection of assemblies or sub-assemblies, design part verification, engine part inspection, wood quality inspection, label inspection, medical device inspection, product orientation inspection, packaging inspection, food pack inspection, etc.

[0187] Furthermore, the device according to the invention can be used in vehicles, trains, planes, ships, spacecraft and other traffic applications. Besides the applications mentioned above for traffic applications, passive tracking systems for aircraft, vehicles, etc. are feasible to use at least one device according to the invention, such as at least one detector according to the invention, for monitoring the speed and / or direction of moving objects. In particular, tracking of fast moving objects on land, at sea and in the air, including in space. At least one device according to the invention, such as at least one detector according to the invention, can in particular be mounted on stationary and / or moving devices. The output signal of at least one device according to the invention can be combined with a guidance mechanism, for example for the autonomous or guided movement of other objects. Applications are therefore feasible to avoid collisions between tracked objects and maneuvered objects or to enable collisions. The device according to the invention requires low computational power. electric power , instantaneous response, and the passive nature of the detection system, which is generally more difficult to detect and jam compared to active systems such as radar. Apparatus according to the present invention is particularly useful, but not limited to, in speed control and air traffic control systems. Additionally, apparatus according to the present invention may be used in automated road toll collection systems.

[0188] The device according to the invention can generally be used for passive applications, such as the guidance of ships in ports or dangerous locations, and of aircraft when landing or taking off. Here, fixed and known active targets can be used for precise guidance. The same can also be used for vehicles traveling dangerous but well-defined routes, such as mining vehicles. Furthermore, the device according to the invention can be used to detect rapidly approaching objects, such as cars, trains, flying objects, animals, etc. Furthermore, the device according to the invention can be used to detect the speed or acceleration of an object, or to predict the movement of an object by tracking one or more of its time-dependent positions, speeds, and accelerations.

[0189] Furthermore, as outlined above, the device according to the invention can be used in the field of gaming. Thus, the device according to the invention can be passive for use with multiple objects of the same or different size, color, shape, etc., such as the detection of movement in combination with software that incorporates the movement into its content. In particular, the application is suitable for implementing movement in a graphic output. Furthermore, applications for devices for giving commands according to the invention, such as using one or more devices according to the invention for gesture or face recognition, are applicable. The device according to the invention can be combined with an active system to operate in low light or other situations where the surrounding situation needs to be improved. Additionally or alternatively, a combination of one or more devices according to the invention with one or more IR or VIS light sources is possible. A combination of the detector according to the invention with special devices is also possible, which can be easily distinguished by, but are not limited to, a special color, shape, relative position with other equipment, speed of movement, light, the frequency used to modulate the light source of the device, the nature of the surface, the material used, the reflection properties, transparency, absorption properties, etc., depending on the system and its software. The device may resemble, among other possibilities, a stick, a racket, a club, a gun, a knife, a wheel, a ring, a steering wheel, a bottle, a ball, a glass, a vase, a spoon, a fork, a cube, a dice, a figurine, a doll, a teddy, a beaker, a pedal, a switch, a glove, a piece of jewelry, a musical instrument or an auxiliary device for playing a musical instrument such as a pick, a drumstick, etc. Other options are possible.

[0190] Furthermore, the device according to the invention can be used to detect and / or track objects that emit light themselves, such as by high temperature or further light emitting processes. The light emitting part can be an exhaust stream, etc. Furthermore, the device reflection according to the invention can be used to track objects and analyze the rotation or orientation of these objects.

[0191] Furthermore, the device according to the invention can be used in general in the fields of architecture, construction and cartography. Thus, in general, one or more devices according to the invention can be used to measure and / or monitor environmental areas, for example countryside or built environments. Therein, one or more devices according to the invention may be combined with other methods and devices or used alone to monitor the progress and accuracy of building projects, changing objects, houses, etc. The device according to the invention can be used to generate three-dimensional models of scanned environments from the ground or the air, in order to build maps of rooms, streets, houses, communities or landscapes. Potential possible application areas can be architecture, cartography, property management, land surveying, etc. By way of example, the device according to the invention can be used in flying vehicles such as drones or multicopters to monitor agricultural production environments, production plants or landscapes such as buildings, chimneys, production sites, fields, etc., to assist rescue operations, to assist work in dangerous environments, to assist firefighters in indoor or outdoor burning areas, to find or monitor one or more people, animals or moving objects, for recreational purposes such as a drone tracking and recording one or more people playing a sport such as skiing or cycling (this can be achieved by following helmets, marks, beacon devices, etc.). The device according to the invention can be used to recognize obstacles, to follow a predefined path, to follow edges, pipes, buildings, etc., or to record a global or regional map of an environment. Furthermore, the device according to the invention can be used for locating and positioning drones indoors or outdoors, for stabilizing the height of a drone indoors where air pressure sensors are not accurate enough, or for the interaction of several drones, such as the coordinated movement of several drones or charging or refueling in the air.

[0192] Furthermore, the device according to the invention may be used in an interconnection network of home appliances, such as CHAIN ​​(Cedec Home Appliances Interoperation Network), to interconnect and for automation, management of basic appliance-related services in the home, such as energy or load management, remote diagnostics, pet-related appliances, children's appliances, child monitoring, appliance-related monitoring, assistance or services for elderly or sick people, home security and / or monitoring, remote control of appliance operation, automatic maintenance support. Furthermore, the device according to the invention may be used in heating or cooling systems, such as air conditioning systems, in particular to identify which parts of a room should have a certain temperature or humidity depending on the location of one or more people. Furthermore, the device according to the invention may be used in domestic robots, such as service or autonomous robots that can be used for household chores. The device according to the invention may be used for several different purposes, such as to avoid collisions or to map the environment, to identify the user, to personalize the robot's performance to a given user, for security purposes or for gesture or face recognition. By way of example, the device according to the invention can be used in robot vacuum cleaners, floor washing robots, dry mopping robots, ironing robots for ironing clothes, animal litter robots like cat litter robots, security robots for detecting intruders, robot lawn mowers, automatic pool cleaners, gutter cleaning robots, window cleaning robots, toy robots, telepresence robots, social robots for providing companionship to less mobile people, robots for translating and speaking from speech to sign language or sign language to speech. In environments with less mobile people like the elderly, domestic robots with the device according to the invention may be used to pick up objects, transport objects and safely interact with objects and users. Furthermore, the device according to the invention can be used in robots that operate with dangerous materials or objects or in dangerous environments.As non-limiting examples, the device according to the invention can be used in robots or unmanned remotely operated vehicles, particularly for operating with hazardous materials such as chemicals or radioactive materials or other dangerous or potentially dangerous objects such as mines after disasters, or for operating or exploring in unsafe environments such as near burning objects or disaster areas, or for carrying out manned or unmanned rescue operations in the air, underwater, underground, etc.

[0193] Furthermore, the device according to the invention can be used in domestic, mobile or entertainment devices, such as refrigerators, microwave ovens, washing machines, blinds or shutters, domestic alarms, air conditioning devices, heating devices, televisions, audio equipment, smart watches, mobile phones, telephones, dishwashers, stoves, etc., to detect the presence of a person, monitor the contents or functions of the device, interact with the person and / or share information about the person with other domestic, mobile or entertainment devices, where the device according to the invention can be used in devices for assisting elderly or disabled, blind or people with limited visual capabilities, for example in household or work, to hold, carry or pick up objects, or in safety systems with optical and / or acoustic signals adapted to signal obstacles in the environment.

[0194] The device according to the invention can further be used in agriculture, for example to detect and sort pests, weeds and / or infected crop plants, completely or partially, where the crop plants may be infected with fungi or insects. Furthermore, for harvesting crops, the device according to the invention can be used to detect animals, such as deer, that may otherwise be harmed by the harvesting equipment. Furthermore, the device according to the invention can be used to monitor the growth of plants in a field or greenhouse, in particular to adjust the amount of water or fertilizer or crop protection product for a given area or even a given plant in a field or greenhouse. Furthermore, in agricultural biotechnology, the device according to the invention can be used to monitor the size and shape of plants.

[0195] Furthermore, the device according to the invention can be combined with sensors for detecting chemicals or pollutants, electronic nose chips, microorganism sensor chips for detecting bacteria or viruses etc., Geiger counters, tactile sensors, thermal sensors etc. This can be used to build smart robots configured to handle dangerous or difficult tasks, for example treating highly infectious patients, handling or removing highly hazardous materials, cleaning highly contaminated areas such as highly radioactive areas or spreading chemicals, pest control in agriculture etc.

[0196] The device or devices according to the invention can further be used to scan objects, for example in combination with CAD or similar software, for additive manufacturing and / or 3D printing. Therein, the high dimensional accuracy of the device according to the invention can be used, for example simultaneously, in the x-, y- or z-direction, or in any combination of these directions. In this regard, the determination of the distance of the illuminated spot on the surface capable of providing reflected or diffusely scattered light from the detector can be performed substantially independently of the distance of the light source from said illuminated spot. This property of the invention is in direct contrast to known methods such as triangulation or time-of-flight (TOF) methods, in which the distance between the light source and the illuminated spot must be known in advance or calculated a posteriori to be able to determine the distance between the detector and the illuminated spot. In contrast to this, with the detector according to the invention, it may be sufficient if the spot is properly illuminated. Furthermore, the device according to the invention can be used to scan reflective surfaces such as metal surfaces, regardless of whether they include solid or liquid surfaces. Furthermore, the device according to the invention can be used for inspection and maintenance, such as pipeline inspection gauges. Furthermore, in a production environment, the device according to the invention can be used to handle objects with poorly defined shapes, such as those grown in nature, for example sorting vegetables or other natural products by shape or size, or cutting meat or other manufactured items with less precision than required for the processing steps.

[0197] Furthermore, the device according to the invention may be used in local navigation systems to enable autonomous or partially autonomous moving vehicles or multicopters etc. to navigate indoor or outdoor spaces. Non-limiting examples may include vehicles moving through automated warehouses picking up objects and placing them in different locations. Indoor navigation may also be used in shopping malls, retail stores, museums, airports or train stations to track the location of moving goods, moving devices, luggage, customers or employees, or to provide users with location-specific information such as their current location on a map or information about products for sale.

[0198] Furthermore, the device according to the invention can be used to ensure safe driving of motorcycles, such as assisting motorcycle driving by monitoring speed, inclines, upcoming obstacles, road irregularities or curves, etc. Furthermore, the device according to the invention can be used in trains or trams to avoid collisions.

[0199] Furthermore, the device according to the invention can be used in handheld devices such as for scanning packaging or parcels to optimize logistics processes, etc. Furthermore, the device according to the invention can be used in further handheld devices such as personal shopping devices, RFID readers, handheld devices for use in medical hospital or health environments to acquire, exchange or record patient or patient health related information, smart badges for retail or health environments.

[0200] As outlined above, the device according to the invention can further be used in manufacturing, quality control or identification applications, such as product identification or size identification (to find the best location or package, to reduce waste, etc.). Furthermore, the device according to the invention can be used for logistics applications. Thus, the device according to the invention can be used for optimized loading, packaging containers or vehicles. Furthermore, the device according to the invention can be used for monitoring or controlling surface damage in the manufacturing field, monitoring or controlling rental objects such as rental vehicles, and / or insurance applications such as damage assessment. Furthermore, the device according to the invention can be used to identify the size of materials, objects or tools, for optimal material handling, etc., especially in combination with robots. Furthermore, the device according to the invention can be used for process control in production, such as observing the filling level of tanks. Furthermore, the device according to the invention can be used for the maintenance of production materials, such as, but not limited to, tanks, pipes, reactors, tools, etc. Furthermore, the device according to the invention can be used to analyze 3D quality marks. Furthermore, the device according to the invention can be used for the manufacture of custom-made goods, such as dental inlays, dental appliances, prosthetics, clothing, etc. The device according to the invention can also be combined with one or more 3D printers for rapid prototyping, 3D copying, etc. Furthermore, the apparatus according to the present invention may be used to detect the shape of one or more articles, such as for anti-piracy and anti-counterfeiting purposes of products.

[0201] Furthermore, the device according to the invention may be used in the context of gesture recognition. In this context, gesture recognition in combination with the device according to the invention may be used as a human-machine interface, in particular for transmitting information to a machine via body movements, body part movements or object movements. Here, information may be transmitted, preferably, via hand part movements, such as hands or fingers, in particular pointing to an object, applying sign language for the hearing impaired, making number signs, approval, disapproval, waving, such as when asking someone to come closer or when leaving or when greeting a person, pushing an object, taking an object, or hand or finger movements, such as warm-up exercises in the field of sports or music. Furthermore, information may be transmitted by arm or leg movements, such as turning, kicking, grabbing, twisting, rotating, scrolling, browsing, pushing, bending, punching, shaking, with arms, legs, both arms, both legs or a combination of arms and legs, for purposes of entertainment, exercise, training functions of the machine, sports, music, etc. Furthermore, information may be conveyed by movements of the whole body or major parts of the body, such as jumping, turning, or making complex signs such as the sign language used in airports or traffic police to convey information such as "turn right", "turn left", "go ahead", "slow down", "stop", "stop the engine", or complex gestures such as swimming, diving, running, shooting, or complex movements or body positions in yoga, pilates, judo, karate, dance, or ballet. Furthermore, information may be transmitted by using real or simulated devices to control virtual devices corresponding to the simulated devices, such as using a simulated guitar to control functions of a virtual guitar in a computer program, using a real guitar to control virtual guitar functions in a computer program, using a real or simulated book to read, page through, or view a virtual document in an e-book, using a real or simulated pen to draw in a computer program, etc. Furthermore, the transmission of information may be combined with feedback to the user, such as sound, vibration, or movement.

[0202] In a music and / or instrument environment, the device according to the invention in combination with gesture recognition can be used for athletic purposes, controlling instruments, recording instruments, playing or recording music by pretending to only hold an instrument such as playing an imitation instrument or air guitar to avoid noise, or conducting a virtual orchestra, ensemble, band, big band, choir, etc., for practice, exercise, recording or entertainment purposes, etc.

[0203] Furthermore, in security and surveillance environments, the device according to the present invention in combination with gesture recognition can be used to recognize a person's movement profile, such as recognizing a person by their walking or body movements, or to use hand signs or movements or body part or whole body signs or movements as personal authentication signs or movements for access or authentication control.

[0204] Furthermore, in smart home applications or Internet of Things environments, the device according to the invention in combination with gesture recognition can be used for central or decentralized control of household appliances, e.g. refrigerators, central heating, air conditioners, microwave ovens, ice makers, water heaters, televisions, smartphones, games consoles, video recorders, DVD players, entertainment devices such as personal computers, laptops, tablets or combinations thereof, domestic devices which may be part of an interconnected network of combinations of household appliances and entertainment devices.

[0205] Furthermore, in a virtual reality or augmented reality environment, the device according to the present invention in combination with gesture recognition can be used to control movements or functions (e.g., playing or reproducing) of virtual reality or augmented reality applications, such as games using signs, gestures, body movements or body part movements, navigating a virtual world, manipulating virtual objects, practicing or exercising in sports, arts, crafts, music and games using virtual objects such as balls, chess figures, go stones, musical instruments, tools, brushes, etc.

[0206] Furthermore, in a medical environment, the device according to the invention in combination with gesture recognition can be used for monitoring or investigating rehabilitation training, remote diagnosis, or surgery or treatment, and for superimposing medical images at the location of the medical device, for example superimposing pre-recorded medical images, e.g. from a magnetic resonance tomography or X-ray, with images, e.g. from an endoscope or ultrasound, recorded during the surgery or treatment.

[0207] Furthermore, in manufacturing and process automation environments, the device according to the invention in combination with gesture recognition can be used to control, teach or program robots, drones, unmanned autonomous vehicles, service robots, mobile objects, etc., e.g. for programming, controlling, manufacturing, operating, repair or teaching purposes or for remote manipulation of objects or areas for safety reasons or for maintenance purposes.

[0208] Furthermore, in the context of business intelligence metrics, the device according to the invention in combination with gesture recognition can be used for people counting, customer movement study, areas where customers spend time, objects, customer test, take, probe study, etc.

[0209] Furthermore, the device according to the invention can be used in a do-it-yourself or professional tool environment, in particular with electric or motor driven tools or power tools, such as drill machines, saws, chisels, hammers, wrenches, staple guns, disc cutters, metal shears and nibblers, angle grinders, die grinders, drills, hammer drills, heat guns, wrenches, sanders, engraving machines, nail guns, jigsaws, biscuit joiners, wood routers, planers, polishers, tile cutters, washers, rollers, wall chasers, lathes, impact drivers, jointers, paint rollers, spray guns, mortisers, welding machines and the like, in particular to aid in manufacturing precision, to keep minimum or maximum distances or for safety measures.

[0210] Furthermore, the device according to the invention can be used to assist the visually impaired. Furthermore, the device according to the invention can be used with touch screens to avoid direct contact, for example for hygiene reasons, as may be used in retail environments, medical applications, production environments, etc.

[0211] Additionally, the device according to the present invention can be used in agricultural production environments such as stable cleaning robots, egg collectors, milking machines, harvesters, farm machinery, harvesters, forwarders, combine harvesters, tractors, cultivators, plows, destoners, harrows, strip tills, spreaders, planters such as potato planters, fertilizer spreaders, sprayers, sprinkler systems, windrowers, balers, loaders, forklifts, lawn mowers, and the like.

[0212] Furthermore, the device according to the invention can be used for the selection and / or fitting of clothes, shoes, glasses, hats, prosthetics, dental appliances for people or animals with limited communication abilities or possibilities, such as children or people with disabilities. Furthermore, the device according to the invention can be used in environments such as warehousing, logistics, distribution, shipping, loading, unloading, smart manufacturing, quaternary industry, etc. Furthermore, in manufacturing environments, the device according to the invention can be used in situations such as handling, distribution, bending, material handling, etc.

[0213] The device according to the invention can be combined with one or more other types of measuring devices. Thus, the device according to the invention can be combined with one or more other types of sensors or detectors, such as a time-of-flight (TOF) detector, a stereo camera, a light field camera, a lidar, a radar, a sonar ultrasonic detector, or an interferometry. When the device according to the invention is combined with one or more other types of sensors or detectors, the device according to the invention and the at least one further sensor or detector can be designed as independent devices, in which the device according to the invention is separate from the at least one further sensor or detector. Alternatively, the device according to the invention and the at least one further sensor or detector can be fully or partially integrated or designed as a single device.

[0214] Thus, as a non-limiting example, the device according to the invention may further include a stereo camera. As used herein, a stereo camera is a camera designed to capture images of a scene or object from at least two different viewpoints. Thus, the device according to the invention may be combined with at least one stereo camera.

[0215] The functionality of a stereo camera is generally known in the art, since stereo cameras are generally known to those skilled in the art. A combination with a device according to the invention can provide additional distance information. Thus, a device according to the invention can be adapted to provide, in addition to the information of the stereo camera, at least one information item regarding the longitudinal position of at least one object in a scene captured by the stereo camera. Information provided by the stereo camera, such as distance information obtained by evaluating triangulation measurements made by the stereo camera, may be calibrated and / or verified with a device according to the invention. Thus, by way of example, a stereo camera can be used to provide at least one first information item regarding the longitudinal position of at least one object, such as by using triangulation measurements, and a device according to the invention can be used to provide at least one second information item regarding the longitudinal position of at least one object. The first information item and the second information item can be used to improve the accuracy of the measurement. Thus, the first information item may be used to calibrate the second information item and vice versa. Thus, a device according to the invention can, by way of example, form a stereo camera system with a stereo camera and a device according to the invention, the stereo camera system being configured to calibrate information provided by the stereo camera using information provided by the device according to the invention.

[0216] Thus, additionally or alternatively, the device according to the invention may be adapted to use a second item of information provided by the device according to the invention to correct a first item of information provided by the stereo camera. Additionally or alternatively, the device according to the invention may be configured to use a second item of information provided by the device according to the invention to correct an optical distortion of the stereo camera. Furthermore, the device according to the invention may be adapted to calculate stereo information provided by the stereo camera, the second item of information provided by the device according to the invention being usable to speed up the calculation of the stereo information.

[0217] As an example, the device according to the invention may be adapted to use at least one virtual or real object in the scene captured by the device according to the invention to calibrate the stereo camera. As an example, one or more objects and / or areas and / or spots can be used for the calibration. As an example, the distance of at least one object or spot can be determined by using the device according to the invention, and the distance information provided by the stereo camera can be calibrated by using the distance determined using the device according to the invention. For example, at least one active light spot of the device according to the invention can be used as a calibration point for the stereo camera. As an example, the active light spot can move freely in the image.

[0218] The device according to the invention can be adapted to calibrate the stereo camera continuously or non-continuously by using the information provided by the active distance sensor, so that, by way of example, the calibration may be performed periodically, continuously or from time to time.

[0219] Furthermore, typical stereo cameras exhibit measurement errors or uncertainties depending on the distance of the object, which can be reduced when combined with the information provided by the device according to the invention.

[0220] The combination of stereo cameras with other types of distance sensors is generally known in the art. Thus, D. Scaramuzza et al., "IEEE / RSJ International Conference on Intelligent Robot and System", IROS 2007, pp. 4164-4169, discloses an external self-calibration of a 3D laser range finder from a camera and a natural scene. Similarly, D. Klimentjew et al., "IEEE Conference on Multisensor Fusion and Integration for Intelligent Systems" (MFI), pp. 236-241, 2010, discloses a multisensor fusion of a camera and a 3D laser range finder for object recognition. As will be understood by those skilled in the art, the laser range finders in these configurations known in the art can simply be replaced or supplemented by at least one device according to the present invention without changing the methods and advantages disclosed by these prior art documents. For potentially possible configurations of the stereo camera, reference can be made to these prior art documents. Nevertheless, other configurations and embodiments of at least one optional stereo camera are feasible.

[0221] Preferably, for further potential details of the light detector, the method, the human machine interface, the entertainment device, the tracking system, various uses of the camera and the detector, in particular with respect to the transfer device, the lateral light sensor, the evaluation device, and, where applicable, the longitudinal light sensor, the modulation device, the illumination source and the imaging device, in particular for potential materials, configurations and further details, reference may be made to one or more of WO 2012 / 110924A1, US2012 / 206336A1, WO 2014 / 097181A1, US2014 / 291480A1, PCT Patent Application No. PCT / EP2016 / 051817 filed on January 28, 2016, the entire contents of all of which are incorporated herein by reference.

[0222] Further, the device according to the present invention can be used in infrared detection applications, heat detection applications, thermometer applications, heat seeking applications, flame detection applications, fire detection applications, smoke detection applications, temperature sensing applications, spectroscopy applications, etc. Further, the device according to the present invention can be used in photocopying or xerography applications. Further, the device according to the present invention can be used in exhaust gas monitoring, combustion process monitoring, industrial process monitoring, chemical process monitoring, food processing process monitoring, etc. Further, the device according to the present invention can be used in temperature control, motion control, exhaust control, gas sensing, gas analysis, motion sensing, chemical sensing, etc.

[0223] The above-mentioned optical sensor and detector, the method, the human-machine interface, and the entertainment device including at least one of the optical sensors, as well as the proposed use, have considerable advantages over the prior art. Thus, in general, a simple but efficient detector can be provided for accurately determining the position of at least one object in space, particularly with respect to the depth or both the depth and width of the at least one object. Furthermore, the optical sensor according to the present invention can be particularly sensitive over at least a partition of the IR spectral range, thus providing an efficient, reliable and large-area position sensing device for infrared rays.

[0224] Compared to devices known in the art, the optical sensor proposed herein, which can preferably be supplied in a less bulky airtight package, nevertheless offers a high degree of protection against possible degradation due to external influences such as humidity and / or oxygen, even at high temperatures and humidity. Here, the material used for the optical sensor can be selected in such a way as to ensure that the optical sensor exhibits suitable absorption characteristics over a wide spectral range. As an example, the material alumina (Al 2 O 3 A cover layer including alumina (Al) may be transparent to light having wavelengths up to 5 μm. Other materials may be used for other desired absorption characteristics over other spectral ranges. Additionally, alumina (Al 2 O 3Since various materials exhibit refractive indices greater than 1.3, such as 1.75, each selected cover layer can simultaneously function as an anti-reflection layer. As mentioned above, this type of cover material can form a smooth cover layer that can conformally and tightly follow the surface of the photoconductive material. This effect can be even more advantageous, since the light intensity within the photoconductive material that can function as a sensor area can thus be increased without further effort or additional materials.

[0225] Also, the light sensor is simple to manufacture and can be easily integrated into a package.

[0226] Here, the manufacture of the cover layer according to the invention, in particular by using atomic layer deposition (ALD) or a combination of ALD and sputtering, can easily fill pinholes and porous structures in the layer of photoconductive material, thus providing a leak-free encapsulation. In this regard, it can be mentioned that the ALD process or the combination of ALD and sputtering is generally a batch process that can be applied to a large number of samples in a single batch. Compared to dispensing of adhesives, a faster and cheaper encapsulation can be performed according to the invention. Furthermore, the bondability of the electrical contacts even through the cover layer and the non-bulky hermetic package of the optical sensor allows for easy integration onto a circuit carrier device, such as a printed circuit board (PCB). In an alternative embodiment, the encapsulated photoconductive layer can be contacted by using through-glass vias, which allows a direct hermetic connection from the top to the bottom surface of the substrate. In this alternative embodiment, the device can be directly glued or soldered onto a circuit carrier device, such as a PCB.

[0227] In summary, in the context of the present invention, the following embodiments are considered to be particularly preferred:

[0228] Embodiment 1: An optical sensor comprising at least one layer of photoconductive material, at least two individual electrical contacts contacting the layer of photoconductive material, and a cover layer deposited on the layer of photoconductive material, where the cover layer is an amorphous layer comprising at least one metal-containing compound.

[0229] Embodiment 2: At least one metal-containing compound comprises a metal or metalloid, the metal being selected from the group consisting of lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), carbon monoxide (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), cesium (Cs), barium (Ba), lanthanum (Lu ... Tantalum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), Hafnium (Hf), Tantalum (Ta), 2. The optical sensor of embodiment 1, wherein the metalloid is selected from the group consisting of ungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl) and bismuth (Bi), and the metalloid is selected from the group consisting of boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb) and tellurium (Te).

[0230] Embodiment 3: The optical sensor of embodiment 1 or 2, wherein the at least one metal-containing compound comprises a metal selected from the group consisting of aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), and tungsten (W).

[0231] Embodiment 4: The optical sensor of any of embodiments 1 to 3, wherein the at least one metal-containing compound is selected from the group including an oxide, a hydroxide, a chalcogenide, a pnictide, a carbide, or a combination thereof.

[0232] Embodiment 5: The optical sensor of embodiment 4, wherein the at least one metal-containing compound comprises at least one oxide, at least one hydroxide, or a combination thereof of aluminum (Al), titanium (Ti), zirconium (Zr), or hafnium (Hf); or a nitride of silicon (Si).

[0233] Embodiment 6: The optical sensor of any of embodiments 1 to 5, wherein the cover layer is adapted to function as an encapsulation layer and / or as an activation layer for the photoconductive material.

[0234] Embodiment 7: The optical sensor of embodiment 6, wherein the cover layer is further adapted to function as an anti-reflective layer.

[0235] Embodiment 8: An optical sensor according to any of embodiments 1 to 7, wherein the cover layer is or comprises a laminate having at least two adjacent layers, the adjacent layers differing by their respective composition, and at least one adjacent layer comprises at least one metal-containing compound.

[0236] Embodiment 9: The optical sensor of embodiment 8, wherein at least one adjacent layer comprises at least one of a metal compound, a polymer compound, a silicone compound, and a glass compound.

[0237] Embodiment 10: An optical sensor according to any of embodiments 1 to 9, wherein the cover layer has a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, and most preferably 50 to 75 nm.

[0238] Embodiment 11: An optical sensor according to any of embodiments 1 to 10, wherein the cover layer is a conformal layer with respect to an adjacent surface of the layer of photoconductive material, and the thickness of the conformal layer can conform to the corresponding surface of the photoconductive material within a deviation of ±50 nm, preferably ±20 nm, most preferably ±10 nm, over at least 90%, preferably at least 95%, and most preferably at least 99% of the surface of the cover layer.

[0239] Embodiment 12: An optical sensor according to any of embodiments 1 to 11, wherein the cover layer is or includes an atomic deposition layer or a chemical vapor deposition layer.

[0240] Embodiment 13: An optical sensor according to any one of embodiments 1 to 12, wherein the cover layer further comprises at least one of the following characteristics: an anti-reflective layer, an optical filter layer, an encapsulation layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high dielectric constant layer, or a conductive layer.

[0241] Embodiment 14: An optical sensor according to any of embodiments 1 to 13, wherein the cover layer is further at least partially covered with at least one additional layer and / or at least one additional layer is at least partially deposited between the layer of photoconductive material and the cover layer.

[0242] Embodiment 15: The optical sensor of embodiment 14, wherein the additional layer is or includes at least one of an anti-reflective layer, an optical filter layer, an encapsulation layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high dielectric constant layer, or a conductive layer.

[0243] Embodiment 16: The optical sensor of any of embodiments 1 to 15, wherein the photoconductive material comprises an inorganic photoconductive material.

[0244] Embodiment 17: The inorganic photoconductive material is one or more of selenium, tellurium, selenium-tellurium alloys, photoconductive metal oxides, Group 4 elements or compounds, Group 3-Group 5 compounds, Group 2-Group 6 compounds, chalcogenides, pnictogenides, halides, and Those Solid solutions and / or Doped variants of them 17. The optical sensor of embodiment 16, wherein

[0245] Embodiment 18: The optical sensor of embodiment 17, wherein the chalcogenide is selected from the group consisting of sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, ternary chalcogenides, and quaternary or higher chalcogenides.

[0246] Example 19: Sulfide chalcogenides include lead sulfide (PbS), cadmium sulfide (CdS), zinc sulfide (ZnS), mercury sulfide (HgS), silver sulfide (Ag 2 S), manganese sulfide (MnS), bismuth trisulfide (Bi 2 S 3 ), antimony trisulfide (Sb 2 S 3 ), arsenic trisulfide (As 2 S 3 ), tin(II) sulfide (SnS), tin disulfide (SnS 2 ), indium sulfide (In 2 S 3 ), copper sulfide (CuS), cobalt sulfide (CoS), nickel sulfide (NiS), molybdenum disulfide (MoS 2 ), iron disulfide (FeS 2 ), chromium trisulfide (CrS 3 ), Copper Indium Sulfide (CIS), Copper Indium Gallium Selenide (CIGS), Copper Zinc Tin Sulfide (CZTS), and Those Solid solutions and / or Doped variants of them 19. The optical sensor of embodiment 18, selected from the group consisting of:

[0247] Embodiment 20: The selenide chalcogenides are lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), bismuth triselenide (Bi 2 Se 3), mercury selenide (HgSe), antimony triselenide (Sb 2 Se 3 ), arsenic triselenide (As 2 Se 3 ), Nickel Selenide (NiSe), Thallium Selenide (TlSe), Copper Selenide (CuSe), Molybdenum Diselenide (MoSe 2 ), tin selenide (SnSe), cobalt selenide (CoSe), indium selenide (In 2 Se 3 ), copper zinc tin selenide (CZTSe), and Those Solid solutions and / or Doped variants of them 20. The optical sensor of embodiment 18 or 19, selected from the group consisting of:

[0248] Embodiment 21: The telluride chalcogenides are lead telluride (PbTe), cadmium telluride (CdTe), zinc telluride (ZnTe), mercury telluride (HgTe), bismuth telluride (Bi 2 Te 3 ), arsenic tritelluride (As 2 Te 3 ), antimony tritelluride (Sb 2 Te 3 ), Nickel Telluride (NiTe), Thallium Telluride (TlTe), Copper Telluride (CuTe), Molybdenum Ditelluride (MoTe 2 ), tin telluride (SnTe), cobalt telluride (CoTe), silver telluride (Ag 2 Te), indium telluride (In 2 Te 3 ), and Those Solid solutions and / or Doped variants of them 21. The optical sensor of any of embodiments 18 to 20, selected from the group consisting of:

[0249] Embodiment 22: The ternary chalcogenide is selected from the group consisting of mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), mercury cadmium sulfide (HgCdS), lead cadmium sulfide (PbCdS), lead mercury sulfide (PbHgS), copper indium disulfide (CuInS 2), cadmium sulfide selenide (CdSSe), zinc sulfide selenide (ZnSSe), thallium sulfide selenide (TlSSe), cadmium zinc sulfide (CdZnS), cadmium chromium sulfide (CdCr 2 S 4 ), mercury chromium sulfide (HgCr 2 S 4 ), Copper Chromium Sulfide (CuCr 2 S 4 ), cadmium lead selenide (CdPbSe), copper indium diselenide (CuInSe 2 ), indium gallium arsenide (InGaAs), lead monoxide sulfide (Pb 2 OS, Lead monoxide selenide (Pb 2 OSe), lead sulfide selenide (PbSSe), arsenic selenide telluride (As 2 Se 2 Te), indium gallium phosphide (InGaP), gallium arsenide phosphide (GaAsP), aluminum gallium phosphide (AlGaP), cadmium selenide (CdSeO 3 ), cadmium zinc telluride (CdZnTe), and cadmium zinc selenide (CdZnSe), copper-zinc-tin-sulfide-selenium chalcogenide (CZTSSe), and Those Solid solutions and / or Doped variants of them 22. The optical sensor of any of embodiments 18 to 21, selected from the group consisting of:

[0250] Example 23: The photoconductive metal oxide is copper(II) oxide (CuO), copper(I) oxide (CuO 2 ), Nickel oxide (NiO), Zinc oxide (ZnO), Silver oxide (Ag 2 O), manganese oxide (MnO), titanium dioxide (TiO 2 ), barium oxide (BaO), lead oxide (PbO), cerium oxide (CeO 2 ), Bismuth oxide (Bi 2 O 3 ), cadmium oxide (CdO) and Those Solid solutions and / or Those 23. The optical sensor according to any of embodiments 18 to 22, wherein the doped variant is selected from the group consisting of:

[0251] Embodiment 24: Group 2-6 compounds include cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), cadmium zinc telluride (CdZnTe), mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), mercury zinc selenide (CdZnSe), and Those Solid solutions and / or Doped variants of them 24. The optical sensor of any of embodiments 18 to 23, selected from the group consisting of:

[0252] Embodiment 25: Group 3-5 compounds include indium antimonide (InSb), boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), aluminum antimonide (AlSb), indium nitride (InN), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), gallium antimonide (GaSb), and Those Solid solutions and / or Doped variants of them 25. The optical sensor of any of embodiments 18 to 24, selected from the group consisting of:

[0253] Embodiment 26: Group 4 elements or compounds are doped diamond (C), doped silicon (Si), silicon carbide (SiC), silicon germanium (SiGe) and Those Solid solutions and / or Doped variants of them 26. The optical sensor of any of embodiments 18 to 25, selected from the group consisting of:

[0254] Embodiment 27: The optical sensor of any of embodiments 1 to 26, wherein the cover layer is in direct contact with the layer of photoconductive material.

[0255] Embodiment 28: An optical sensor according to any of embodiments 1 to 27, wherein the cover layer completely covers the accessible surface of the photoconductive material.

[0256] Embodiment 29: An optical sensor according to any of embodiments 1 to 28, wherein a cover layer at least partially covers the electrical contacts.

[0257] Embodiment 30: An optical sensor according to embodiment 29, wherein the electrical contacts are preferably joinable by using wires, in particular gold (Au), aluminum (Al), or copper (Cu) wires.

[0258] Embodiment 31: An optical sensor according to any of embodiments 1 to 30, wherein the electrical contacts can be joined through the cover layer.

[0259] Embodiment 32: A photosensor according to any one of embodiments 1 to 31, wherein at least two electrical contacts are provided at different locations on the layer of photoconductive material.

[0260] Embodiment 33: An optical sensor as described in any of embodiments 1 to 32, wherein the electrical contacts comprise at least one electrode material selected from the group consisting of silver (Ag), platinum (Pt), molybdenum (Mo), aluminum (Al), gold (Au), and graphene.

[0261] Embodiment 34: An optical sensor according to embodiment 33, wherein an adhesive layer is provided on the electrical contact, the adhesive layer being suitable for adhesion.

[0262] Embodiment 35: The optical sensor of embodiment 34, wherein the adhesion layer comprises at least one of nickel (Ni), copper (Cr), titanium (Ti), or palladium (Pd).

[0263] Embodiment 36: A photosensor according to any of embodiments 1 to 35, wherein at least one layer of photoconductive material is applied directly or indirectly to at least one substrate.

[0264] Embodiment 37: The optical sensor of embodiment 36, wherein at least one of the cover layer and the substrate is optically transparent within a wavelength range.

[0265] Embodiment 38: The optical sensor of embodiment 36 or 37, wherein the substrate is an electrically insulating substrate.

[0266] Embodiment 39: The substrate comprises one of glass, silicon (Si), a transparent conductive oxide (TCO), or a transparent organic polymer, the transparent conductive oxide being preferably indium tin oxide (ITO), fluorine doped tin oxide (SnO 2 39. The optical sensor of any of embodiments 36 to 38, comprising a transparent conductive oxide (PTO), aluminum doped zinc oxide (AZO), magnesium oxide (MgO), or a perovskite transparent conductive oxide.

[0267] Embodiment 40: An optical sensor described in any of embodiments 1 to 39, wherein the substrate is or includes a conductive substrate, and an additional insulating intermediate layer is present between the conductive substrate and the at least one layer of photoconductive material.

[0268] Embodiment 41: A detector for optically detecting at least one object, comprising: - an optical sensor according to any of the preceding embodiments, wherein the optical sensor comprises at least one sensor area and is designed to generate at least one sensor signal in response to illumination of the sensor area by a light beam; and at least one evaluation device, which is designed to generate at least one coordinate of the object by evaluating the sensor signal of the optical sensor, A detector including:

[0269] Embodiment 42: A detector according to embodiment 41, wherein the sensor area is exactly one continuous sensor area.

[0270] Embodiment 43: A detector according to embodiment 41 or 42, wherein the sensor area of ​​the optical sensor is formed by a surface of the respective device, the surface facing towards the object or facing away from the object.

[0271] Embodiment 44: A detector described in any of embodiments 41 to 43, wherein the detector is adapted to generate a sensor signal by one or more of measuring the electrical resistance or conductivity of at least a portion of the sensor area.

[0272] Embodiment 45: A detector as described in embodiment 44, wherein the detector is configured to generate a sensor signal by performing at least one current-voltage measurement and / or at least one voltage-current measurement.

[0273] Embodiment 46: A detector described in any of embodiments 41 to 45, further comprising a bias voltage source.

[0274] Embodiment 47: A detector according to embodiment 46, wherein a bias voltage source and a load resistor are arranged in series with the vertical photosensor.

[0275] Embodiment 48: The detector of embodiment 46 or 47, wherein a bias voltage is applied to the photoconductive material of the vertical photosensor.

[0276] Embodiment 49: A detector according to any of embodiments 41 to 48, wherein the detector further comprises at least one modulation device for modulating the irradiation.

[0277] Embodiment 50: A detector as described in embodiment 49, wherein the light beam is a modulated light beam.

[0278] Embodiment 51: The detector is designed to detect at least two sensor signals in the case of different modulations, in particular at least two sensor signals of respectively different modulation frequencies, A detector as described in embodiment 50, wherein the evaluation device is designed to generate at least one item of information regarding the position of the object by evaluating at least two sensor signals, each at a different modulation frequency.

[0279] Embodiment 52: A detector according to embodiment 50 or 51, wherein the optical sensor is further designed such that, for the same total output of the illumination, the sensor signal depends on the modulation frequency of the modulation of the illumination.

[0280] Embodiment 53: A detector as described in embodiment 52, wherein the light beam is an unmodulated continuous wave light beam.

[0281] Embodiment 54: A detector described in any of embodiments 41 to 53, wherein the sensor signal is a longitudinal sensor signal, which depends on the beam cross-section of the light beam in the sensor area for the same total irradiation power, and the evaluation device is designed to generate at least one item of information regarding the longitudinal position of the object by evaluating the longitudinal sensor signal.

[0282] Embodiment 55: A detector as described in embodiment 54, wherein the evaluation device is designed to generate at least one item of information regarding the longitudinal position of the object from at least one predetermined relationship between the geometry of the illumination and the relative position of the object with respect to the detector, preferably taking into account the known power of the illumination and optionally taking into account the modulation frequency with which the illumination is modulated.

[0283] Embodiment 56: A detector as described in embodiment 54 or 55, wherein the sensor signal is a uniform sensor signal for the entire sensor area.

[0284] Embodiment 57: A detector described in any of embodiments 54 to 56, wherein the evaluation device is configured to normalize the vertical sensor signal and generate information regarding the vertical position of the object independent of the intensity of the light beam.

[0285] Embodiment 58: A detector as described in embodiment 57, wherein the evaluation device is configured to recognize whether the light beam is widening or narrowing by comparing the vertical sensor signals of different vertical sensors.

[0286] Embodiment 59: A detector described in any of embodiments 54 to 58, wherein the evaluation device is configured to generate at least one item of information regarding the longitudinal position of the object by determining the diameter of the light beam from at least one longitudinal sensor signal.

[0287] Embodiment 60: A detector as described in embodiment 59, wherein the evaluation device is configured to compare the diameter of the light beam with known beam characteristics of the light beam, preferably from a known dependence of the beam diameter of the light beam on at least one propagation coordinate in the propagation direction of the light beam and / or from a known Gaussian profile of the light beam, in order to determine at least one item of information regarding the longitudinal position of the object.

[0288] Embodiment 61: A detector described in any of embodiments 41 to 60, wherein the sensor signal is a lateral sensor signal, the lateral sensor signal being provided by an electrical contact in contact with the photoconductive material.

[0289] Embodiment 62: A detector as described in embodiment 61, wherein the electrical contacts are configured as at least one split electrode, a bias voltage source is applicable to the at least one split electrode, and the evaluation device is further designed to generate at least one item of information regarding the lateral position of the object by applying the bias voltage source and the at least one split electrode and by evaluating the lateral sensor signal.

[0290] Embodiment 63: A detector as described in embodiment 62, wherein the split electrode comprises at least two partial electrodes.

[0291] Embodiment 64: A detector according to embodiment 63, in which at least four partial electrodes are provided, each partial electrode being preferably provided in a form including a T-shape.

[0292] Embodiment 65: A detector as described in embodiment 63 or 64, wherein the current through the partial electrodes depends on the position of the light beam within the sensor area.

[0293] Embodiment 66: A detector as described in embodiment 65, wherein the lateral optical sensor is adapted to generate a lateral sensor signal according to the current through the partial electrodes, and the evaluation device is configured to generate information regarding the lateral position of the object from at least one ratio of the current through the partial electrodes.

[0294] Embodiment 67: A detector described in any of embodiments 41 to 66, further comprising at least one irradiation source.

[0295] Embodiment 68: A detector as described in embodiment 67, wherein the irradiation source is selected from: an irradiation source that is at least partially connected to the object and / or at least partially identical to the object; an irradiation source that is designed to at least partially irradiate the object with primary radiation.

[0296] Embodiment 69: A detector as described in embodiment 68, in which the light beam is generated by reflection of the primary radiation on the object and / or by emission by the object itself stimulated by the primary radiation.

[0297] Embodiment 70: A detector as described in embodiment 69, wherein the spectral sensitivity of the optical sensor is covered by the spectral range of the illumination source.

[0298] Embodiment 71: A detector described in any of embodiments 41 to 70, wherein the detector has at least two optical sensors, and the optical sensors are stacked.

[0299] Embodiment 72: A detector as described in embodiment 71, in which the optical sensors are stacked along the optical axis.

[0300] Embodiment 73: A detector as described in embodiment 71 or 72, wherein the optical sensors are arranged so that a light beam from the object illuminates the multiple optical sensors, preferably sequentially, and at least one sensor signal is generated by each optical sensor.

[0301] Embodiment 74: A detector described in any of embodiments 41 to 73, wherein the detector further includes at least one transfer device, the transfer device being configured to guide the light beam onto the light sensor.

[0302] Embodiment 75: A detector as described in embodiment 74, wherein the transfer device includes at least one of an optical lens, a mirror, a beam splitter, and an optical filter.

[0303] Embodiment 76: A detector described in any of embodiments 41 to 75, wherein the detector further comprises at least one imaging device.

[0304] Embodiment 77: A detector according to embodiment 76, wherein the imaging device is positioned at a position furthest from the object.

[0305] Embodiment 78: A detector as described in embodiment 76 or 77, wherein the imaging device includes a camera.

[0306] Embodiment 79: A detector described in any of embodiments 76 to 78, wherein the imaging device includes at least one of: an inorganic camera; a monochrome camera; a multi-color camera; a full-color camera; a pixelated inorganic chip; a pixelated organic camera; a CCD chip; preferably a multi-color CCD chip or a full-color CCD chip; a CMOS chip; an IR camera; and an RGB camera.

[0307] Embodiment 80: An arrangement according to any of embodiments 41 to 79, relating to a detector, the arrangement comprising at least two detectors.

[0308] Embodiment 81: The arrangement of embodiment 80, wherein the arrangement further comprises at least one irradiation source.

[0309] Embodiment 82: A human-machine interface for exchanging at least one piece of information between a user and an apparatus, in particular for inputting a control command, the human-machine interface comprising at least one detector as described in any of embodiments 41 to 79 relating to a detector, the human-machine interface being designed to generate at least one geometric information of the user by means of the detector, the human-machine interface being designed to assign at least one item of information, in particular at least one control command, to the geometric information.

[0310] Embodiment 83: A human-machine interface as described in embodiment 82 according to the preceding embodiment, wherein at least one geometric information of the user is selected from the group consisting of: the position of the user's body; the position of at least one body part of the user; the orientation of the user's body; and the orientation of at least one body part of the user.

[0311] Embodiment 84: A human-machine interface as described in embodiment 82 or 83, further comprising at least one beacon device connectable to a user, and adapted to enable the detector to generate information regarding the location of the at least one beacon device.

[0312] Embodiment 85: A human-machine interface as described in embodiment 84, wherein the beacon device includes at least one illumination source configured to generate at least one light beam that is transmitted to the detector.

[0313] Embodiment 86: An entertainment device comprising at least one human-machine interface according to any of the above embodiments relating to a human-machine interface, the entertainment device being designed to enable a player to input at least one item of information via the human-machine interface, the entertainment device being designed to vary the entertainment function according to the information, an entertainment device for performing at least one entertainment function, in particular a game.

[0314] Embodiment 87: A tracking system for tracking a position of at least one movable object, the tracking system including at least one detector as described in any of embodiments 41 to 79 relating to a detector, the tracking system further including at least one tracking controller configured to track a series of positions of the object, each including at least one item of information regarding the position of the object at a particular point in time.

[0315] Embodiment 88: A tracking system as described in embodiment 87, further comprising at least one beacon device connectable to the object, the detector being configured to generate information regarding the position of the object of the at least one beacon device.

[0316] Embodiment 89: A scanning system for determining at least one position of at least one object, the scanning system including a detector as described in any of embodiments 41 to 79 relating to a detector, the scanning system further including at least one radiation source configured to emit at least one light beam for irradiating at least one dot arranged on at least one surface of the at least one object, and the scanning system is designed to generate at least one item of information regarding the distance between the at least one dot and the scanning system by using the at least one detector.

[0317] Embodiment 90: A scanning system as described in embodiment 89, wherein the irradiation source includes at least one artificial irradiation source, in particular at least one laser light source and / or at least one incandescent lamp and / or at least one semiconductor light source.

[0318] Embodiment 91: A scanning system as described in embodiment 89 or 90, wherein the illumination source emits a plurality of individual light beams, in particular an array of light beams exhibiting a respective pitch, in particular a regular pitch.

[0319] Embodiment 92: A scanning system described in any of embodiments 89 to 91, comprising at least one housing.

[0320] Embodiment 93: A scanning system as described in embodiment 92, wherein at least one item of information regarding the distance between at least one dot and the distance of the scanning system is determined between at least one dot and a particular point on the housing of the scanning system, in particular at the front end or rear end of the housing.

[0321] Embodiment 94: A scanning system as described in embodiment 92 or 93, wherein the housing includes at least one of a display, a button, a fixing unit, and a leveling unit.

[0322] Embodiment 95: A stereoscopic vision system comprising at least one tracking system described in embodiment 87 or 88 relating to a tracking system, and at least one scanning system described in any of embodiments 89 to 94 relating to a scanning system, wherein the tracking system and the scanning system are arranged in parallel to be aligned in a direction parallel to the optical axis of the stereoscopic vision system, and at the same time, each of the stereoscopic vision systems comprises at least one optical sensor arranged to indicate an individual displacement with respect to a direction perpendicular to the optical axis of the stereoscopic vision system.

[0323] Embodiment 96: A stereoscopic vision system as described in embodiment 95, wherein the tracking system and the scanning system each include at least one vertical light sensor, and the sensor signals of the vertical light sensors are combined to determine an item of information regarding the vertical position of the object.

[0324] Embodiment 97: A stereoscopic vision system as described in embodiment 96, in which the sensor signals of the vertical light sensors are distinguishable from one another by applying different modulation frequencies.

[0325] Embodiment 98: A stereoscopic vision system as described in embodiment 97, further comprising at least one lateral light sensor, the sensor signal of which is used to determine an item of information relating to the lateral position of the object.

[0326] Embodiment 99: A stereoscopic vision system as described in embodiment 98, in which stereoscopic vision of an object is obtained by combining information items relating to the vertical position of the object and information items relating to the lateral position of the object.

[0327] Embodiment 100: A camera for imaging at least one object comprising a detector as described in any of embodiments 41 to 79 relating to a detector.

[0328] Embodiment 101: The following steps a) providing at least one layer of photoconductive material; b) thereafter applying at least one precursor adapted to react to at least one metal-containing compound, whereby the metal-containing compound is deposited as an amorphous cover layer over the layer of photoconductive material; and c) thereafter heat treating the amorphous cover layer; and further providing at least two electrical contacts in electrical contact with the layer of photoconductive material.

[0329] Embodiment 102: The metal-containing compound comprises a metal or metalloid, the metal being lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), carbon monoxide (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), cesium (Cs), barium (Ba), lanthanum ( La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), Hafnium (Hf), Tantalum (Ta), Tan 102. The method of embodiment 101, wherein the metalloid is selected from the group consisting of platinum (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl) and bismuth (Bi), and the metalloid is selected from the group consisting of boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb) and tellurium (Te).

[0330] Embodiment 103: The method of embodiment 102, wherein the metal contained in the metal-containing compound is selected from the group consisting of aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), and tungsten (W).

[0331] Embodiment 104: The method of any of embodiments 101 to 103, wherein the at least one metal-containing compound is selected from the group including an oxide, a hydroxide, a chalcogenide, a pnictide, a carbide, or a combination thereof.

[0332] Embodiment 105: The method of embodiment 104, wherein the at least one metal-containing compound is selected from at least one oxide, at least one hydroxide, or a combination thereof of aluminum (Al), titanium (Ti), zirconium (Zr), or hafnium (Hf); or a nitride of silicon (Si).

[0333] Embodiment 106: The method of any of embodiments 101 to 105, wherein step b) is repeated at least one time.

[0334] Embodiment 107: The method of embodiment 106, in which at least two adjacent layers are deposited as a stack, the adjacent layers being selected to be different with respect to their respective composition, and at least one of the adjacent layers comprising at least one metal-containing compound.

[0335] Embodiment 108: The method of embodiment 107, wherein at least one adjacent layer is selected to include at least one of a metal compound, a polymer compound, a silicone compound, and a glass compound.

[0336] Embodiment 109: The method according to any of embodiments 101 to 108, wherein the cover layer is deposited on the photoconductive material until it achieves a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, and most preferably 50 to 75 nm.

[0337]

[0041] Embodiment 110: The method of any of embodiments 101 to 109, wherein the cover layer is deposited on the photoconductive material such that the cover layer is conformal to an adjacent surface of the photoconductive material.

[0338] Embodiment 111: The method of embodiment 110, wherein the thickness of the conformal layer conforms to the corresponding surface of the photoconductive material within a deviation of ±50 nm, preferably ±20 nm, most preferably ±10 nm, over at least 90% of the surface of the cover layer, preferably at least 95%, and most preferably at least 99%.

[0339] Embodiment 112: The method according to any of embodiments 101 to 111, wherein at least one deposition method is used to deposit a metal-containing compound on the photoconductive material, and the at least one deposition method is preferably selected from an atomic layer deposition process, a chemical vapor deposition process, a sputtering method, or a combination thereof, preferably selected from an atomic layer deposition process, and a combination of an atomic layer deposition process and a sputtering process.

[0340] Embodiment 113: The method according to any of embodiments 101 to 112, wherein two different types of precursors are used, a first precursor being or comprising an organometallic precursor and a second precursor being or comprising a fluid.

[0341] Embodiment 114: The metal-containing compound comprises aluminum (Al), the first precursor is or comprises TMA, and the second precursor is H 2 114. The method of embodiment 113, which is or comprises O, a solution thereof, or ozone.

[0342] Embodiment 115: The metal-containing compound comprises zirconium (Zr), the first precursor is or comprises TDMA-Zr, and the second precursor is H 2 114. The method of embodiment 113, which is or comprises O, a solution thereof, or ozone.

[0343] Embodiment 116: At least one precursor is an inert gas, in particular nitrogen (N 2 116. The method of embodiment 114 or 115, wherein the nitrogen is mixed with argon (Ar).

[0344] Embodiment 117: A method according to any of embodiments 101 to 116, wherein at least one additional layer is deposited on the cover layer or a partition thereof and / or at least one additional layer is at least partially deposited on the layer of photoconductive material and then covered by the cover layer.

[0345] Embodiment 118: The method of embodiment 117, wherein the additional layer is selected to be or include at least one of an anti-reflective layer, an optical filter layer, an encapsulation layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fog layer, a high dielectric constant layer, or a conductive layer.

[0346] Embodiment 119: The method according to any of embodiments 101 to 118, wherein the heat treatment according to step c) comprises applying a temperature between 20°C and 300°C, preferably between 50°C and 200°C.

[0347] Embodiment 120: The method of any of embodiments 101 to 119, wherein at least one of steps b) and c) is performed in a vacuum chamber.

[0348] Embodiment 121: The method of embodiment 120, wherein both steps b) and c) are performed in the same vacuum chamber.

[0349] Embodiment 122: The method according to embodiment 121, wherein an electrical contact is provided before step b) and the cover layer is further partially deposited on the electrical contact.

[0350] Embodiment 123: The method of embodiment 122, wherein the electrical contacts are joined to at least one external connection by using a conductive lead, preferably in wire form, in particular a gold (Au), aluminum (Al), or copper (Cu) wire.

[0351] Embodiment 124: The method of embodiment 125, wherein the conductive lead wire is joined to the electrical contact through the cover layer.

[0352] Embodiment 125: Use of a detector as described in any of embodiments 1 to 124, comprising: gas detection; fire detection; flame detection; heat detection; smoke detection; combustion monitoring; spectrometry; temperature sensing; motion sensing; industrial monitoring; chemical sensing; exhaust gas monitoring; distance measurement, particularly in traffic technology; position measurement, particularly in traffic technology; entertainment applications; security applications; human-machine interface applications; tracking applications; scanning applications; stereoscopic vision; photography applications; imaging applications or camera applications; mapping applications for generating a map of at least one space; homing or tracking beacon detectors for vehicles; thermal signal measuring distance and / or position of an object; machine vision applications; robotics applications; logistics applications.

[0353] Further optional details and features of the present invention are evident from the description of preferred exemplary embodiments, which are set forth below in relation to the dependent claims. In this connection, certain features can be implemented alone or in combination with features. The present invention is not limited to the exemplary embodiments. The exemplary embodiments are illustrated diagrammatically in the drawings. The same reference numbers in the individual drawings refer to identical elements or elements having the same function or elements which correspond to each other in terms of their functions. EXAMPLES

[0354] Figures 1A to 1F each show, highly schematic, an exemplary embodiment of an optical sensor 110 according to the present invention, where Figures 1A to 1D show a side view of the optical sensor 110 and Figures 1E and 1F show a top view of only one partition of the optical sensor 110. Figure 1G shows a transmission electron microscope (TEM) image of the side view of a sample of optical sensor 110 prepared according to the present invention.

[0355] The optical sensor 110 therefore comprises at least one layer 112 of photoconductive material 114. In particular, the layer 112 of photoconductive material 114 can exhibit a thickness of 10 nm to 100 μm, preferably 100 nm to 10 μm, in particular 300 nm to 5 μm. In a preferred embodiment, the layer 112 of photoconductive material 114 can comprise an essentially flat surface, but other embodiments are also feasible in which the variations in the surface of the layer 112 can exhibit, for example, gradients or steps. Here, the layer 112 of photoconductive material 114 can preferably be manufactured as described below with respect to FIG. 3. However, other manufacturing methods are also feasible.

[0356] In the exemplary embodiment of Figures 1A to 1F, the photoconductive material 114 can be or include at least one chalcogenide that can be selected from the group including sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, and ternary chalcogenides. In particular, the photoconductive material 114 can be or include a sulfide, preferably lead sulfide (PbS), a selenide, preferably lead selenide (PbSe), a telluride, preferably cadmium telluride (CdTe), or a ternary chalcogenide, preferably mercury zinc telluride (HgZnTe; MZT). Many suitable photoconductive materials 114 are generally known to exhibit unique absorption characteristics within the infrared spectral range, so that the photosensor 110 can preferably be used as an infrared sensor. However, other embodiments and / or other photoconductive materials are also applicable, particularly those photoconductive materials as described elsewhere in this document for this purpose.

[0357] Additionally, the photosensor 110 according to the present invention includes a cover layer 116 that is deposited on the layer 112 of photoconductive material 114 .

[0358] Here, the cover layer 116 can particularly preferably be deposited on the layer 112 so as to be in direct or indirect contact with the layer 112 of photoconductive material 114. In a preferred embodiment, the cover layer 116 can be completely deposited on the layer 112 so that it can completely cover the accessible surface 118 of the photoconductive material 114. Thus, as already mentioned above, the cover layer 116 is adapted, firstly, to encapsulate the photoconductive material 114, in particular as an airtight package of the light sensor 110 or a partition thereof, in particular to prevent degradation of the light sensor 110 or a partition thereof due to external influences such as humidity and / or oxygen, and in particular to prevent degradation of the photoconductive material 114. As further mentioned above, it was surprisingly found that the cover layer 116 can exhibit additional functions, secondly, as a result of its deposition on the layer 112 of photoconductive material 114 and the subsequent heat treatment of both the cover layer 116 and the layer 112 of photoconductive material 114. As a result, the cover layer 116 is adapted to activate the photoconductive material 114 in the sense that the photoconductive properties of the photoconductive material 114 may be significantly improved.

[0359] As mentioned above, the cover layer 116 includes at least one metal-containing compound 120. In a particularly preferred embodiment described herein, the metal-containing compound 120 includes a metal selected from the group consisting of aluminum (Al), zirconium (Zr), hafnium (Hf), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), and tungsten (W), with the metals aluminum (Al), titanium (Ti), zirconium (Zr), and hafnium (Hf) being particularly preferred to achieve activation of the photoconductive properties of the photoconductive material 114. However, other types of metals are also applicable, particularly those metals as described elsewhere in this document for this purpose. Furthermore, the metal-containing compound 120 can be selected from the group including oxides, hydroxides, chalcogenides, pnictides, carbides, or combinations thereof.

[0360] In this particular embodiment, the metal-containing compound 120 can preferably include at least one oxide of Al, at least one hydroxide of Al, or a combination thereof, and can be represented by the formula AlOx(OH)y 0≦x≦1.5 and 0≦y≦1.5, where x+y=1.5. Alternatively, the metal-containing compound 120 can include at least one oxide of Zr, at least one hydroxide of Zr, or a combination thereof, and can be represented by the formula ZrOx(OH)y 0≦x≦2 and 0≦y≦2, where x+y=2. However, other types of metal-containing compounds 120, particularly hafnium (Hf), may also be feasible. In all cases, there may still be a remainder of unreacted organic ligands.

[0361] In further alternative embodiments (not shown here), the cover layer 116 may be or include a laminate that may have at least two adjacent layers, which may differ by their respective compositions, in particular such that one, both, some, or all of the adjacent layers may include one of the metal-containing compounds 120. Here, the adjacent layers may include two different metal-containing compounds 120, as described in more detail above. By way of example, the cover layer 116 may include alternating adjacent layers of an aluminum (Al)-containing compound and a zirconium (Zr)-containing compound. However, other combinations of metal-containing compounds 120 other than aluminum (Al) and zirconium (Zr) are also possible. In addition, the laminate may not be composed of any of the above-mentioned metal-containing compounds 120, but rather may further include an additional adjacent layer that may be or include at least one of a metal compound, a polymeric compound, a silicone compound, or a glass compound. Other types of materials may also be applicable.

[0362] In this particular embodiment, the cover layer 116 may exhibit a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, and most preferably 50 to 75 nm. This range of thickness may reflect, in particular, the amount of metal-containing compound 120 in the cover layer 116, which may be advantageous for achieving the above-mentioned function of providing encapsulation to the photoconductive material 114 and at the same time activating the photoconductive properties of the photoconductive material 114. Furthermore, in this particular embodiment, the cover layer 116 may be a conformal layer with respect to the adjacent surface 118 of the photoconductive material 114. Thus, as defined above, the thickness of the conformal layer can conform to the corresponding surface 118 of the photoconductive material 114 within a deviation of ±50 nm, preferably ±20 nm, and most preferably ±10 nm, and this deviation occurs over at least 90%, preferably at least 95%, and most preferably at least 99% of the surface 122 of the cover layer 116, thereby excluding any contamination or imperfections that may be present on the surface 122 of the cover layer 116.

[0363] As further shown in each of Figures 1A to 1C, the at least one layer of photoconductive material 114 may preferably be applied directly to at least one substrate 124, which may preferentially be or include an insulating substrate. The cover layer 116 and the substrate 124 or at least one of the partitions thereof are optically transparent, in particular within a desired wavelength range, such as the infrared spectral range, to allow an incident light beam 126 to reach the photoconductive material 114 to optically alter the electrical conductivity within the layer 112 of photoconductive material 114.

[0364] As shown diagrammatically in FIG. 1A, the beam path 128 of the incident light beam 126 may be configured to pass through the cover layer 116 to generate a light spot having a diameter 130 in the layer 112 of the photoconductive material 114. As a result, it may be particularly advantageous to select the metal-containing compound 120 such that the cover layer 116 is preferably optically transparent within the desired wavelength range, particularly by exhibiting suitable absorption properties. However, alternatively (not shown here), it may be preferred to select the metal-containing compound 120 such that the cover layer 116 is not optically transparent within the desired wavelength range. Such a type of selection may be advantageous when a particular metal-containing compound 120 can exhibit properties that are particularly favorable for the optical sensor 110 apart from providing optical transparency within the desired wavelength range. In addition, it is preferred that one or both of the metal-containing compound 120 used for the cover layer 116 and the material applied to the substrate 124 can exhibit optically transparent properties within the desired wavelength range, for example, to enable the optical sensor 110 to sense the light beam 126 from both directions. Here, the substrate 124 may comprise an optically transparent material 132, in particular glass, although other materials that may be at least partially optically transparent in the infrared spectral range are also applicable.

[0365] Furthermore, the cover layer 116 can be adapted to exhibit further functions in addition to the above-mentioned functions of providing encapsulation to the photoconductive material 114 and at the same time activating the photoconductive properties of the photoconductive material 114. In this regard, the metal-containing compound 120 used in the cover layer 116 can be specifically selected so that it can simultaneously perform the desired further functions. In particular, the metal-containing compound 120 used in the cover layer 116 can exhibit a high refractive index, such as more than 1.2 or more than 1.5, in order to qualify as a suitable anti-reflection layer. As already mentioned above, the cover layer 116 can advantageously be provided in the form of a smooth layer that can closely conform to the surface of the photoconductive material 114. Further embodiments of functional layers can include, but are not limited to, scratch-resistant layers, hydrophilic layers, hydrophobic layers, self-cleaning layers, anti-fogging layers, high-dielectric constant layers, and conductive layers.

[0366] In certain embodiments, particularly when it is not feasible to provide the cover layer 116 with the desired additional functionality, or when the degree of the desired additional functionality provided by the selected cover layer 116 is not sufficient, the cover layer 116 can be at least partially covered by at least one additional layer 134, which can be at least partially deposited on the cover layer 116. Alternatively or additionally, the at least one additional layer 134 can be at least partially deposited between the layer 112 of the photoconductive material 114 and the cover layer 116. Preferably, the additional layer 134 can be or exhibit a further desired functionality, and thus can include at least one of an anti-reflection layer, an optical filter layer, a scratch-resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fog layer, a high-dielectric layer, or a conductive layer. Here, a person skilled in the art can easily select and provide the at least one additional layer 134. In this regard, at least one of the additional functionality, composition, and structure of the additional layer 134 can be selected similarly or differently for the embodiment of the optical sensor 110 as shown in FIG. 1A and FIG. 1B. In the embodiment shown in Figure 1A, it may be advantageous to apply an anti-reflection layer or an optical filter layer as additional layer 134, whereas in the embodiment shown in Figure 1B, it may be rather preferable to apply a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, a high dielectric constant layer, or a conductive layer as additional layer 134. However, other embodiments may also be possible.

[0367] 1A to 1D, the optical sensor 110 according to the present invention includes at least two individual electrical contacts 136, 136', namely at least one first electrical contact 136 and at least one second electrical contact 136', which are configured to contact the layer 112 of photoconductive material 114. To this end, the electrical contacts 136, 136' may be constructed and arranged such that an electric current can be guided through the layer 112 of photoconductive material 114 to the second electrical contact 136 and vice versa via the first electrical contact 136, or alternatively, a voltage can be applied to the layer 112 of photoconductive material 114 by using the first electrical contact 136 and the second electrical contact 136'. For both purposes, the first electrical contact 136 is insulated from the second electrical contact 136', while both the first electrical contact 136 and the second electrical contact 136' are directly connected to the layer 112 of photoconductive material 114.

[0368] Here, a direct connection between any one of the electrical contacts 136, 136' and the layer 112 of photoconductive material 114 may be provided by any known means capable of providing an electrical connection, such as plating, welding, soldering, wire bonding, thermosonic bonding, stitch bonding, ball bonding, wedge bonding, compliant bonding, thermocompression bonding, anodic bonding, direct bonding, plasma activated bonding, eutectic bonding, glass frit bonding, adhesive bonding, transient liquid phase diffusion bonding, surface activated bonding, tape automated bonding, or by depositing a highly conductive material in the contact area. To allow sufficient electrical conductivity through the electrical contacts 136, 136' while at the same time providing sufficient mechanical stability of the electrical contacts 136, 136', the electrical contacts 136, 136' preferably comprise at least one electrode material selected from the group consisting of metallic gold (Ag), copper (Cu), platinum (Pt), aluminum (Al), molybdenum (Mo) or gold (Au), an alloy comprising at least one of the aforementioned metals, and graphene. However, other types of electrode materials are also applicable.

[0369] As further shown in each of Figures 1A to 1D, the cover layer 116 may at least partially cover the electrical contacts 136, 136' and may be particularly configured to be bondable to one or more leads 138, 138' that may lead from the periphery of the package 140 as shown in Figure 1 to one or more contact pads 142 that may contact an external circuit, such as a circuit carrier device, such as a printed circuit board (PCB) 144. To this end, wires such as gold wires, beryllium doped wires, aluminum wires, platinum wires, palladium wires, silver wires, or copper wires may be used as the leads 138, 138' for bonding the electrical contacts 136, 136' to the contact pads 142 on the printed circuit board 144, or the like. In a particularly preferred embodiment as shown in Figure 1B, the electrical contacts 136, 136' are bondable through the cover layer 116. This feature may, among other things, improve the encapsulation function of the cover layer 116 while at the same time providing stability to the electrical contacts 136, 136'. In an alternative embodiment, as shown in FIG. 1C, the electrical contacts 136, 136' may be directly bondable to contact pads 142 of a printed circuit board 144, in particular by using conductive through vias 146 that connect the electrical contacts 136, 136' with the contact pads 142.

[0370] According to a further preferred embodiment, which is shown diagrammatically in Fig. 1D, the at least one layer of photoconductive material 114 may alternatively be applied indirectly to a substrate 124, which may be or include a conductive substrate 124, such as a semiconductor silicon chip. Nevertheless, at least one intermediate layer 148 may be particularly disposed between the conductive substrate 124 and the layer 112 of photoconductive material 114, in order to electrically insulate the conductive substrate 124 from the layer 112 of photoconductive material 114.

[0371] As shown in Figures 1A to 1D, the electrical contacts 136, 136' may preferably be provided in the form of a single layer. In contrast to this, the electrical contacts 136, 136', 136'', ... may alternatively be provided in the form of an array constituted by the electrical contacts 136, 136', 136'', ..., as shown diagrammatically in top views in Figures 1E and 1F. As shown in Figure 1E, the array of electrical contacts 136, 136', 136'', ... may thus be arranged in a parallel arrangement of fingers, each of which comprises a conductive material, each finger being in individual contact with the layer 112 of photoconductive material 114 and capable of providing a connection to an external circuit, such as by using conductive leads (not shown here). As shown in Figure 1F, the electrical contacts 136, 136', 136'', ... may alternatively be provided in the form of two interdigitated comb-like structures 149, 149'. Additionally, although not shown herein, additional arrangements of the electrical contacts 136, 136', 136'', . . . may also be feasible with the present invention.

[0372] As mentioned above, FIG. 1G shows a TEM image of a side view of an optical sensor 110 prepared according to the present invention. As can be seen from the TEM image of FIG. 1G, alumina (Al 2 O 3 1G, the cover layer 116 covers the layer 112 of lead sulfide (PbS) photoconductive material 114 in a conformal manner. As can be further derived from FIG. 1G, the cover layer 116 is now covered by an additional layer 134 comprising platinum (Pt), which is now used as a protective layer in the preparation of the TEM sample.

[0373] As already mentioned above, the photoconductive properties of the photoconductive material lead sulfide (PbS) appear to be slightly affected by the provision of an encapsulation layer on the lead sulfide (PbS) layer by G.H. Blount et al. (see above). As explained by G.H. Blount et al. (see above), the specific sensitivity S of a photodetector containing a lead sulfide (PbS) layer is 1 is a crystalline alumina (Al 2 O 3) layer, 1.4 × 10 without sealing layer 2 cm 2 / W to 2.3×10 2 cm 2 / W, thus resulting in only a factor of less than two improvement over the photoconductive lead sulfide (PbS) layer. However, in accordance with the present invention, Table 1 shows that the specific sensitivity S, measured in mV between the layer 112 of lead sulfide (PbS) photoconductive material 114, is 1.2 times higher than that of the alumina (Al 2 O 3 ) depending on the presence of the cover layer 116. Here, the specific sensitivity S is the sensitivity S normalized linearly to the size of the device under investigation, i.e., the specific sensitivity S 1 Related measurements were performed with a bias of 19 V at 850 nm with the same light intensity applied. In clear contrast to the findings of Blount et al. (see above), Table 1 shows that the combination of the two described features of the cover layer 116, namely encapsulation and activation by heat treatment, is specifically designed to significantly improve the quality of the photoconductive lead sulfide (PbS) layer as follows:

[0374] [Table 1]

[0375] Thus, the photoconductive PbS layer initially exhibits a value of S≈0.1 mV, which can be significantly increased to S≈30 mV only by applying both encapsulation and heat treatment to the photoconductive PbS layer. As a result, the improvement in photoconductivity of the PbS layer that can be observed here is more than 100 times, i.e. reaches 300 times. Thus, the cover layer 116 according to the invention not only provides a protective encapsulation for the photoconductive material 114, but also contributes essentially to the activation of the photoconductive properties of the photoconductive material 114 after heat treatment.

[0376] Similar results could be obtained for the specific sensitivity S, measured in mV, between the layer 112 of photoconductive material 114 containing lead selenide (PbSe). For this, lead selenide (PbSe) was deposited via chemical bath deposition (CBD) on the glass substrate 124. The electrical contacts 136, 136' could be applied before or after the deposition. After the CBD of the lead selenide (PbSe), a first heat treatment was performed for the activation of the lead selenide (PbSe) layer. During the first heat treatment, a temperature between 250° C. and 400° C. was applied for 10 minutes to 72 hours. A second heat treatment step could be followed at a lower temperature compared to the first heat treatment. From this point on, alumina (Al 2 O 3 The cover layer 116, including the ZnO (ZnS) layer, is applied via ALD in the same manner as in the case of using lead sulfide (PbS) as the cover layer 116, i.e., at a temperature of about 60° C. and a thickness of 70 nm to 100 nm, however, other thicknesses are possible.

[0377] As a result, the encapsulation process can improve the optical performance of the sensor, particularly by increasing the specific sensitivity S in mV as follows:

[0378] [Table 2]

[0379] Related measurements were performed at a wavelength of 4 μm with a modulation frequency of 606 Hz using the same light intensity. Again, in clear contrast to the findings of Blount et al. (see above), Table 2 shows that the combination of the two described features of the cover layer 116, namely encapsulation and activation by heat treatment, is specifically designed to considerably improve the quality of the photoconductive lead sulfide (PbS) layer, by about 40 times.

[0380] 2A-2D present various X-ray diffraction (XRD) patterns. The XRD pattern in FIG. 2A is of alumina (Al 2 O 3) due to a coated lead sulfide (PbS) sensor. As used herein, an XRD diagram includes a collection of X-ray data counted at 2θ vs. N. As can be readily derived from the XRD diagram in FIG. 2A, the crystalline alumina (Al 2 O 3 ) layer is not detected. 2 O 3 The cover layer 116 is made of an amorphous metal-containing compound alumina (Al 2 O 3 2A are due to the gold (Au) contained in the electrical contacts 136, 136' and flat bondable gold (Au) with gold wires, and the photoconductive lead sulfide (PbS) material 114.

[0381] Furthermore, to prove the amorphous nature of the cover layer 116, in the experiment corresponding to FIG. 2B, alumina (Al 2 O 3 As a result, the corresponding XRD pattern in Figure 2B shows only two broad rises that can be attributed to the amorphous glass. 2 O 3 ) cannot be observed here. As a result, FIG. 2 shows that the present invention is a method for producing alumina (Al 2 O 3 1 clearly shows that a layer suitable for the amorphous cover layer 116 can be provided that includes

[0382] In addition, Figures 2C and 2D show the corresponding lattice incidence XRD (0.5° incidence angle) diagrams of two different samples, where the sample in Figure 2C is a 75 nm thick alumina (Al 2 O 3 ) cover layer, whereas the sample in FIG. 2D contains a 75 nm thick alumina (Al ) cover layer deposited on a lead sulfide (PbS) photoconductive layer that is disposed on a borosilicate glass substrate. 2 O 3For the purposes of the present invention, both samples were tempered at 100° C. for 10 days. As a result, both samples contained an alumina (Al 2 O 3 ) exhibits X-ray amorphous behavior, whereas lead sulfide (PbS) was detectable (Figure 2D). The origin of the diffraction line at 2θ=45°, indicated by the letter "d" in both Figures 2C and 2D, remains open.

[0383] FIG. 3 illustrates an exemplary embodiment of a method for manufacturing a light sensor 110 according to the present invention.

[0384] As shown in FIG. 3A, before providing the layer 112 of photoconductive material 114 according to method step a), the electrical contacts 136, 136' may be produced, for example in the form of a vapor-deposited metal layer on the substrate 124, preferably comprising glass as the optically transparent material 132, the vapor-deposited metal layer being able to be provided by known vapor deposition techniques. In particular, the vapor-deposited metal layer may comprise one or more of silver (Ag), aluminum (Al), platinum (Pt), magnesium (Mg), chromium (Cr), titanium (Ti) or gold (Au). Alternatively, the electrical contacts 136, 136' may comprise a layer of graphene. However, as described above in more detail, other methods of producing the electrical contacts 136, 136' are feasible.

[0385] As shown in FIG. 3B, a layer 112 of photoconductive material 114 is then provided according to method step a). For this, the photoconductive material 114 can be synthesized according to the following procedure: Thus, 0.015 mol / L thiourea or its substitution products, 0.015 mol / L lead acetate, lead nitrate or their substitution products, 0.15 mol / L sodium hydroxide or its substitution products are dissolved in a reaction volume, thereby obtaining a clear solution at room temperature. As is known from the prior art, when the above-mentioned solutions are mixed in any order, lead sulfide (PbS) precipitates from the solution at temperatures above 30° C. in such a way that it usually forms a uniform and relatively smooth layer on the side walls and bottom of the liquid-containing reactor or on the walls of any object located therein.

[0386] If, just before the actual precipitation of lead sulfide (PbS) from the mixed precipitation solution, an aqueous solution of a relatively large amount of an agent that liberates nascent oxygen, preferably potassium persulfate, hydrogen peroxide, or sodium perborate, is added to it, lead sulfide (PbS) will precipitate therefrom in the usual way, but in an activated form that can be further sensitized by direct use in the cell or by aging or low-temperature baking. The precipitation solution and the activator are mixed at a temperature preferably above 35°C and stirred for 1 to 3 hours, during which precipitation occurs. Here, the amount of evolved oxygen from persulfate ions, perborate ions, and hydrogen peroxide, expressed in moles, when added to the lead sulfide (PbS) precipitation solution, preferably amounts to 0.01 to 0.5 moles of theoretical PbS in the bath, the theoretical amount of PbS being the amount that would be formed if there was a total conversion of lead and sulfur precipitation compounds to lead sulfide.

[0387] After formation of the lead sulfide (PbS) layer, an aging step can optionally be carried out in a temperature controlled room, preferably at a temperature of about 50° C. and a humidity of greater than 70%, which appears to be beneficial for photoconductive performance. Improved photoconductivity is obtained when the deposited and aged film is further treated by annealing, i.e., by heating in vacuum or air at a temperature of about 100° C.-150° C. for 1-100 hours.

[0388] However, other types of providing the layer 112 of photoconductive material 114 may be feasible.

[0389] FIG. 3C shows diagrammatically the result of step b), whereby a metal-containing compound 120 has been preferably deposited as an amorphous cover layer 116 on the accessible surface 118 of the layer 112 of photoconductive material lead sulfide (PbS) 114, in particular to act as an encapsulation layer. For this, at least one precursor adapted to react to the metal-containing compound 120 has been subsequently applied. In this preferred embodiment, an atomic layer deposition (ALD) process, or a combination of ALD and sputtering, has been used as deposition method. Alternatively, other deposition processes, such as chemical vapor deposition (CVD) processes, may also be applied.

[0390] In a first embodiment of the present invention, the cover layer 116 is made of alumina (Al 2 O 3 ) or Al 2 O 3 / TiO 2 / Al 2 O 3 / … or Al 2 O 3 / ZrO 2 / Al 2 O 3 Stacks such as / ... can also be produced. In this particular embodiment, the ALD process was carried out applying the following process parameters:

[0391] - First precursor: H 2 O; - Second precursor: Al(CH 3 ) 3 (trimethylaluminum, TMA); - Temperature about 60℃; - Approximately 700 cycles.

[0392] As further shown in FIG. 3C, the alumina (Al2O3)-containing cover layer 116 may be applied in a manner adapted to simultaneously cover both the photoconductive lead sulfide (PbS) layer 112 and the electrical contacts 136, 136' that may contact the photoconductive lead sulfide (PbS) layer 112.

[0393] 3D shows diagrammatically the application of method step c) in which the amorphous cover layer 116 produced during step b) is then subjected to a heat treatment, in particular to achieve activation of the photoconductive material 114. Preferably, the heat treatment according to step c) is carried out at a temperature between 20° C. and 300° C., for a time interval between about 1 hour and 350 hours. As shown in Table 1 above, the coated lead sulfide (PbS) photoconductor shows improved photoconductive performance after the heat treatment.

[0394] As shown in Fig. 3E, two electrical contacts 136, 136' in electrical contact with the layer 112 of photoconductive material 114 can be joined to at least one external connection by conductive leads 138, 138', such as gold wires, preferably after heat treatment according to step c), which may be provided through the cover layer 116. However, as mentioned above, other ways of providing the electrical contacts 136, 136' to the conductive lead sulfide (PbS) layer 112 are also feasible, such as providing the leads 138, 138' already before step a), or after step a), or after step b).

[0395] 4 shows very diagrammatically an exemplary embodiment of a light detector 150 according to the invention for determining the position of at least one object 152. The light detector 150 is preferably suitable for use as an infrared detector, however other embodiments are possible.

[0396] The light detector 150 includes at least one light sensor 110, which in this particular embodiment can be used as a longitudinal light sensor 154, arranged along an optical axis 156 of the detector 150. In particular, the optical axis 156 can be an axis of symmetry and / or an axis of rotation of the setup of the light sensor 110. The light sensor 110 can be arranged inside a housing 158 of the detector 150. Furthermore, the at least one transfer device 160 can preferably include a refractive lens 162. An opening 164 of the housing 158 can be arranged in particular concentrically with respect to the optical axis 156 and preferably defines a line of sight 166 of the detector 150. A coordinate system 158 is defined in which the direction parallel or anti-parallel to the optical axis 156 is defined as the longitudinal direction and the direction perpendicular to the optical axis 156 is defined as the transverse direction. In the coordinate system 158, which is symbolically depicted in FIG. 4, the longitudinal direction is denoted by z and the transverse directions are denoted by x and y, respectively. However, other types of coordinate systems 158 are possible.

[0397] Furthermore, the optical sensor 110 is designed to generate at least one sensor signal in response to illumination of the sensor area 170 by the optical beam 126. Furthermore, due to the FiP effect, the optical sensor 110 (here implemented as a vertical optical sensor 154) provides a vertical sensor signal that depends on the beam cross section of the optical beam 126 at the respective sensor area 170, given the same total power illumination. According to the invention, the sensor area 170 comprises at least one layer 112 of a photoconductive material 114, preferably a chalcogenide, in particular lead sulfide (PbS) or lead selenide (PbSe). However, other photoconductive materials 114, in particular other chalcogenides, can be used.

[0398] The resulting longitudinal sensor signal given by the longitudinal light sensor 154 upon the impingement of the light beam 126 depends on the electrical conductivity of the photoconductive material 114 in the sensor area 170 and thus allows the beam cross section of the light beam 126 in the sensor area 170 to be determined. Via electrical contacts 136, 136' to which the leads 138, 138' are joined, the longitudinal sensor signal can be transmitted to an evaluation device 172 designed to generate at least one item of information relating to the position of the object 152 by evaluating the sensor signal of the longitudinal light sensor 154. To this end, the evaluation device 172 may include one or more electronic devices and / or one or more software components for evaluating the sensor signal, which is symbolically depicted by a longitudinal evaluation unit 174 (indicated by "z"). As will be explained in more detail below, the evaluation device 172 may be adapted to determine at least one item of information relating to the longitudinal position of the object 152 by comparing two or more longitudinal sensor signals of the longitudinal light sensor 154.

[0399] The light beam 126 illuminating the sensor area 170 of the light sensor 110 may be generated by the light emitting object 152. Alternatively or additionally, the light beam 126 is generated by a separate illumination source 176, which may include an ambient light source and / or an artificial light source such as a light emitting diode, adapted to illuminate the object 152 such that the object 152 reflects at least a portion of the light generated by the illumination source 176 such that the light beam 126 reaches the sensor area 170 of the light sensor 110 along the optical axis 156, preferably through an opening 164 of the housing 158 of the light detector 150. In certain embodiments, the illumination source 176 may be a modulated light source, one or more modulation characteristics of the illumination source 176 may be controlled by at least one optional modulation device. Alternatively or additionally, modulation may be performed in the beam path between the illumination source 176 and the object 152 and / or between the object 152 and the light sensor 110. Further possibilities are also conceivable.

[0400] In general, the evaluation device 172 can be part of and / or can include one or more data processing devices 178. The evaluation device 172 may be fully or partially integrated into the housing 158 and / or may be embodied as a separate device fully or partially electrically connected to the light sensor 110 in a wireless or wired manner. The evaluation device 172 may further include one or more additional components, such as one or more electronic hardware components and / or one or more software components, such as one or more measurement units and / or one or more evaluation units and / or one or more control units (not shown here).

[0401] FIG. 5 shows the light sensor 110 implemented as a lateral light sensor 180. Here, the illumination of a sensor area 170 including a layer 12 of photoconductive material 114 by a light beam 126 is shown. In FIG. 5, two different situations are shown, representing different distances between the object from which the light beam 126 leaves and propagates towards the detector 150, and the detector 150 itself, which produce two different spot sizes of the light spot generated by the light beam 126 in the sensor area 170, resulting in a first small light spot 182 and a second large light spot 184. In both cases, the overall power of the light beam 126 remains the same across the light spots 182, 184. As a result, the average intensity in the small light spot 182 is significantly higher than in the large light spot 184. Moreover, in both cases the position of the center of the light spots 182, 184 remains unchanged, regardless of the size of the light spots 182, 184. This feature illustrates the possibility that the T-shaped electrical contacts 136, 136', 186, 188 and corresponding leads 138, 138', 190, 192 of the lateral optical sensor 180 provide a lateral sensor signal to the evaluation device 172 as shown here, which is configured to enable the evaluation device 172 to unambiguously determine at least one lateral coordinate x, y of the object 152.

[0402] If a bias voltage source (not shown) can be connected to the T-shaped electrical contacts 136, 136', 186, 188, currents I1, I2, I3 and / or I4 can flow between the bias voltage and the electrical contacts 136, 136', 186, 188. The evaluation device 172, depicted diagrammatically and symbolically in FIG. 6, can therefore be designed to evaluate lateral sensor signals, represented by symbols PD1-PD4 for the lateral sensor signals and FiP for the longitudinal sensor signals of the photosensitive elements. The sensor signals may be evaluated in various ways by the evaluation device in order to derive positional and / or geometrical information of the object. Thus, at least one abscissa x, y can be derived, as outlined above. This is mainly due to the fact that the distances between the centers of the light spots 182, 184 and the electrical contacts 136, 136', 186, 188 are not equal. Thus, the centers of the light spots 182, 184 have a distance l1 from electrical contact 136, a distance l2 from electrical contact 136', a distance l3 from electrical contact 186, and a distance 14 from electrical contact 188. These differences in the distances between the locations of the light spots 182, 184 and the electrical contacts 136, 136', 186, 188 result in different lateral sensor signals.

[0403] The comparison of the sensor signals can be performed in various ways. Thus, in general, the evaluation device 172 can be designed to compare the transverse sensor signals in order to derive at least one transverse coordinate of the object 152 or the light spots 182, 184. By way of example, the evaluation device 172 can include at least one subtraction device 194 and / or any other device providing a function that depends on at least one transverse coordinate, such as the coordinates x, y. In an exemplary embodiment, the subtraction device 194 can be designed to generate at least one difference signal for one or each of the dimensions x, y in FIG. 5. In an exemplary embodiment, the subtraction device 194 can be designed to generate at least one difference signal for one or each of the dimensions x, y in FIG. 5. By way of example, a simple difference between PD1 and PD2, e.g. (PD1-PD2) / (PD1+PD2), can be used as a measure of the x coordinate, and a difference between PD3 and PD4, e.g. (PD3-PD4) / (PD3+PD4), can be used as a measure of the y coordinate. The transformation of the abscissas of the light spots 182, 184 in the sensor area 170, e.g. to the abscissas of the object 152 from which the light beam 126 propagates towards the detector 150, can be performed by using well-known lens equations. For further details, reference can be made to one or more of the above-mentioned prior art documents, such as, by way of example, WO2014 / 097181A1.

[0404] However, it should be noted that other transformations or other algorithms for processing the sensor signals by the evaluation device 172 may also be possible. Thus, in addition to subtraction or close combinations with positive or negative coefficients, non-linear transformations are generally feasible. As an example, one or more known or determinable relationships may be used to transform the sensor signals into z and / or x, y coordinates, which may be derived empirically, such as by calibrating an experiment with objects 152 positioned at various distances from the detector 150 and / or by calibrating an experiment with objects 152 positioned at various lateral or three-dimensional positions and recording the respective sensor signals.

[0405] As already outlined above, the longitudinal coordinate z can also be derived by implementing the FiP effect, which is described in more detail in particular in WO 2012 / 110924 A1 and / or WO 2014 / 097181 A1. For this purpose, at least one longitudinal sensor signal provided by the FiP sensor can be evaluated using an evaluation device 172 and determining therefrom at least one longitudinal coordinate z of the object 152.

[0406] Figures 7A to 7F show experimental results, where a photodetector 150 with a lateral light sensor 180 contains a lead sulfide (PbS) photosensitive resistor. Here, a laser with a wavelength of 630 nm was used as the illumination source 176. The contact configura...

Claims

1. A method of manufacturing an optical sensor (110), comprising the steps of: a) providing at least one layer (112) of photoconductive material (114); b) thereafter applying at least one precursor (170, 172) adapted to react to at least one metal-containing compound (120), whereby said metal-containing compound (120) is deposited as an amorphous cover layer (116) over said layer (112) of said photoconductive material (114); and c) thereafter heat treating the amorphous cover layer (116); the photoconductive material (114) being lead sulfide (PbS) or lead selenide (PbSe); The cover layer (116) is made of the metal-containing compound (120), which is aluminum oxide (Al ２ O ３ ) and the cover layer (116) is adapted to provide a protective encapsulation for the photoconductive material (114) as well as to contribute to activation by impregnating the photoconductive material with a material contained in the cover layer so as to enhance the photoconductive properties of the photoconductive material (114) after thermal treatment; The at least one precursor (170, 172) is a first precursor, H ２ O and a second precursor, Al(CH ３ ) ３ (trimethylaluminum, TMA), said heat treatment of said amorphous cover layer (116) is carried out at a temperature between 20° C. and 300° C. for a time interval between 1 hour and 350 hours; The layer (112) of the photoconductive material (114) comprises crystals having a size of greater than 15 nm and less than or equal to 300 nm, the crystals comprising the at least one photoconductive material (114), and further comprising at least two electrical contacts (136, 136') in electrical contact with the layer (112) of the photoconductive material (114).

2. 2. The method of claim 1, wherein the cover layer is or comprises a stack having at least two adjacent layers, the adjacent layers differing by their respective compositions, and at least one of the adjacent layers comprises at least one metal-containing compound.

3. The method of claim 1 or 2, wherein the cover layer has a thickness of from 10 nm to 600 nm.

4. The method of claim 1 , 2 or 3, wherein the cover layer (116) is conformal with an adjacent surface (118) of the layer (112) of photoconductive material (114).

5. The method of claim 1 , wherein the cover layer (116) comprises a deposition layer, the deposition layer being fabricated by atomic deposition.

6. 6. The method for manufacturing an optical sensor (110) according to claim 1, wherein the cover layer (116) is at least partially covered with at least one additional layer (134) and / or the at least one additional layer (134) is at least partially deposited between the layer (112) of the photoconductive material (114) and the cover layer (116), the additional layer (134) being or including at least one of an anti-reflection layer, an optical filter layer, an encapsulation layer, a scratch resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fogging layer, a high dielectric constant layer, or a conductive layer.

7. 7. The method for manufacturing an optical sensor (110) according to any one of claims 1 to 6, wherein the layer (112) of the photoconductive material (114) is applied directly to at least one substrate (124) or applied together with an intermediate layer (148) to at least one substrate (124), and the at least one substrate (124) and the cover layer (116) are optically transparent within a wavelength range.

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