Current / voltage / power measurement module for plasma device and plasma device having same

Abstract

To provide a current / voltage / power measurement module of a plasma device for measuring a current / voltage, an incident wave, and a reflection wave power, applied to generate and maintain plasma at the time of a substrate processing using the plasma.SOLUTION: A current / voltage / power measurement module of a plasma device, comprises: a processing chamber (10) in which plasma is formed and which forms a processing space (S) sealed for executing substrate processing; a substrate support part (11) onto which a substrate (W) is mounted; and a gas ejection part (12) that ejects gas for executing a step to the processing space (S). In a substrate processing device that performs the substrate processing by applying a RF power supply (30), the current / voltage / power measurement module of the plasma device is provided so as to be adjacent to at least one application wire of a first power supply application wire (110) for applying the RF power supply (30) and a ground wire (120) for grounding, and measure an RF voltage, current, and power for input wave and reflected wave generated by the plasma generated in the processing space (S).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a plasma device, and more particularly to a current / voltage / power measurement module for a plasma device that measures the current / voltage applied for generating and maintaining plasma during substrate processing using plasma, as well as incident wave and reflected wave power, and a plasma device having the same. [Background technology]

[0002] A plasma device is a device that performs substrate processing by forming a plasma state in a sealed processing space.

[0003] Furthermore, the plasma device can have plasma sources having various structures, such as CCP and ICP, depending on the plasma generation principle.

[0004] As an example, as shown in FIG. 1, a plasma device generally includes a process chamber (10) in which plasma is generated and which defines an enclosed processing space (S) for performing substrate processing, a substrate support section (11) provided in the processing space (S) on which a substrate (W) is placed, and a gas injection section (12) which injects gas into the processing space (S) for performing a process.

[0005] Meanwhile, in order to perform uniform substrate processing and fixation and a reproducible process, various methods have been proposed for controlling the plasma formed in the processing space (S) and monitoring the plasma state for plasma control.

[0006] A VI probe has been provided as a means for directly measuring the plasma state generated in the processing space (S) of a substrate processing apparatus. Conventional VI probes ensure the accuracy of RF voltage / current measurements, but the conventional technology of measuring the phase difference from the RF voltage / current waveform and calculating the transmitted power with IVcos(θ) has a problem in that it is difficult to ensure the reliability of transmitted power measurements.

[0007] That is, the conventional commercialized phase difference-based transmitted power measurement method (VI probe) used to measure the state of plasma generated in the processing space (S) of a substrate processing apparatus had many difficult problems in measuring and controlling the RF power transmitted to the plasma. Summary of the Invention [Problem to be solved by the invention]

[0008] In order to solve the above problems, the present invention provides a plasma device having a current / voltage / power measurement module that is configured to have the properties of a capacitor and an inductor at the same time so that RF power measurement can detect the phase difference between voltage and current, i.e., the amount of forward power and the amount of reflected power, i.e., a scalar value, not based on the principle of vectors, and can measure the power applied to generate plasma, and a plasma device having the same.

[0009] That is, an object of the present invention is to provide a means capable of measuring four parameters of RF power input to a processing space S, such as RF voltage, current, forward wave power, and reflected wave power, with one module. [Means for solving the problem]

[0010] The present invention has been created to achieve the above-mentioned object of the present invention, and discloses a current / voltage / power measurement module for a plasma apparatus in a substrate processing apparatus including a process chamber in which plasma is formed and which forms an enclosed processing space for performing substrate processing, a substrate support part provided in the processing space and on which a substrate is placed, and a gas injection part for injecting gas for performing a process into the processing space, wherein one or more RF power sources are applied to at least one of the process chamber, the substrate support part, and the gas injection part to perform substrate processing, the current / voltage / power measurement module being provided adjacent to at least one application line of a first power application line for applying the RF power and a ground line for grounding, and measuring the RF voltage, current, and power of an input wave and a reflected wave generated by the plasma generated in the processing space.

[0011] The current / voltage / power measurement module according to the present invention includes a first directional coupler for measuring the power output by an input wave and a second directional coupler for measuring the power output by a reflected wave.

[0012] The first directional coupler includes an LC combination circuit unit that is adjacent to the application line and that combines a capacitor element and an inductance element that interact with the application line and is wound based on the direction of an incident wave flowing through the application line, and a resistance element unit that includes a first reference resistance element having one end grounded and the other end connected to one end of the LC combination circuit unit, and a second reference resistance element having one end connected to a first output port and the other end connected to one end of the LC combination circuit unit.

[0013] The second directional coupler includes an LC combination circuit unit adjacent to the application line, in which a capacitor element and an inductance element interacting with the application line are combined, and which is wound based on the direction of a reflected wave flowing through the application line; a resistance element unit including a third reference resistance element having one end grounded and the other end connected to one end of the LC combination circuit unit; and a fourth reference resistance element having one end connected to a second output port and the other end connected to one end of the LC combination circuit unit.

[0014] The first directional coupler has one or more filter sections provided at a branch point between the resistive element section and the LC combination circuit section.

[0015] The second directional coupler has one or more filter sections provided at a branch point between the resistive element section and the LC combination circuit section.

[0016] the first directional coupler includes a PCB board having an insertion portion having an inner diameter larger than an outer diameter of the application line so that at least a portion of the application line can be inserted therein; the capacitor element of the first directional coupler and the capacitor element of the second directional coupler include a plurality of capacitor portions formed at intervals along a circumferential direction on an inner peripheral surface of the insertion portion; and the inductance element of the first directional coupler and the inductance element of the second directional coupler include a winding portion that penetrates the PCB board and is wound one or more times to connect the adjacent capacitor portions to an end portion.

[0017] The winding portion includes metal pattern portions formed on the top and bottom surfaces of the PCB board, and vertical connection portions that penetrate the PCB board from top to bottom and electrically connect the metal pattern portions.

[0018] The voltage measurement unit includes a capacitor unit formed along a circumferential direction at a predetermined angle on at least one of the inner surface of the insertion portion and the top surface and bottom surface of the edge of the insertion portion, and a third output port unit connected to the capacitor unit.

[0019] At least one of a resistive element section and a third filter section is provided between a branch point between the capacitor section and the third output port section and a first ground section.

[0020] The current measurement unit includes an inductance unit that is concentric with the voltage measurement unit and farther from the inner surface of the insertion unit, passes through the PCB board, and is wound one or more times, and a fourth output port unit that is connected to the inductance unit.

[0021] At least one of a resistive element section and a fourth filter section is provided between a branch point between the inductance section and the fourth output port section and a second ground section.

[0022] The present invention also discloses a plasma apparatus including a process chamber forming a sealed processing space in which plasma is formed, and a current / voltage / power measurement module of a plasma apparatus characterized by measuring RF voltage, current, and power of input wave and reflected wave generated by plasma generated in the processing space, wherein the voltage / power measurement module is a current / voltage / power measurement module having the configuration described above.

[0023] The processing space includes a substrate support on which a substrate is placed, and a gas injection unit for injecting a gas for performing a process into the processing space, and the substrate is processed by plasma. Effect of the Invention

[0024] The current / voltage / power measurement module for a plasma device and a plasma device having the same according to the present invention are capable of measuring the voltage and current generated by application of RF power and plasma formation, and also measuring the power of incident waves and reflected waves using an LC combination circuit, thereby enabling the measurement of the state of plasma generated in a processing space for performing substrate processing, and enabling plasma control for performing a process.

[0025] Specifically, the current / voltage / power measurement module of the plasma device according to the present invention and the plasma device having the same include a first directional coupler for measuring the power of a reflected wave and a second directional coupler for measuring the power of an incident wave in addition to a configuration for measuring current and voltage, thereby making it possible to measure the current / voltage / power applied for generating and maintaining plasma, and thus has the advantage of being able to accurately control plasma for carrying out a process.

[0026] Furthermore, the current / voltage / power measurement module for a plasma device according to the present invention and the plasma device having the same have the advantage that the current / voltage / power applied for generating and maintaining plasma can be measured with a simple structure by implementing the configuration for measuring the current / voltage applied for generating and maintaining plasma and the power of incident waves and reflected waves on a single PCB board. [Brief description of the drawings]

[0027] [Figure 1] 1 is a conceptual diagram showing an example of a plasma device provided with a current / voltage / power measurement module according to the present invention. [Diagram 2] 1 is a perspective view showing an example of a PCB board constituting a current / voltage / power measurement module according to the present invention; [Figure 3a-3b] 3A and 3B are top and back views, respectively, of the PCB board of FIG. 2. [Figure 4a] FIG. 3 is a conceptual diagram showing the concept implemented as a circuit on the PCB board of FIG. 2. [Figure 4b] FIG. 4b is an enlarged perspective view of part A in FIG. 4a. [Figure 4c] FIG. 4b is an enlarged perspective view of part B in FIG. 4a. [Diagram 5] FIG. 3 is a cross-sectional view of VV in FIG. [Figure 6] 3 is a cross-sectional view showing an inductance portion of the current measuring unit in FIG. 2. [Figure 7] 2 is an equivalent circuit diagram of a first directional coupler and a second directional coupler in the current / voltage / power measurement module according to the present invention. FIG. [Figure 8] 3 is an equivalent circuit diagram of a power measurement unit and a voltage measurement unit in the current / voltage / power measurement module according to the present invention. FIG. BEST MODE FOR CARRYING OUT THEINVENTION

[0028] Hereinafter, a current / voltage / power measuring module for a plasma device and a plasma device having the same according to the present invention will be described with reference to the accompanying drawings.

[0029] First, a plasma device in which the current / voltage / power measuring module according to the present invention is used is a device that generates plasma and performs a preset function, and can be configured in various ways depending on how the plasma is used.

[0030] As an example, a plasma device in which the current / voltage / power measurement module according to the present invention is used is a device that forms plasma in a processing space S to perform substrate processing such as deposition and etching, and various configurations are possible for the plasma formation structure such as ICP (Inductively Coupled Plasma) and CCP (Conductively Coupled Plasma).

[0031] As an example, as shown in FIG. 1, the plasma device may include a process chamber 10 in which plasma is generated and which forms an enclosed processing space S for performing substrate processing, a substrate support unit 11 provided in the processing space S on which a substrate W is placed, and a gas injection unit 12 which injects gas into the processing space S for performing a process.

[0032] The process chamber 10 is configured to form a sealed processing space S in which plasma is generated and substrate processing is performed, and may have various configurations.

[0033] For example, the process chamber 10 includes a container in which a processing space S is formed, and an upper lead detachably coupled to an upper side of the container.

[0034] The substrate support 11 is provided in the processing space S and configured to support a substrate W thereon, and may have various configurations.

[0035] As an example, the substrate support 11 may include a susceptor portion on which the substrate W is placed, and a support rod portion extending from a bottom surface of the susceptor portion to support the susceptor portion.

[0036] The gas injection unit 12 is configured to inject gas for performing a process into the processing space S, and may have various configurations depending on the gas injection structure.

[0037] As an example, the gas injection unit 12 is composed of a shower head that injects gas downward, the gas being supplied through a gas supply pipe provided on the upper side.

[0038] On the other hand, the plasma device is characterized in that one or more RF power sources 30 are applied to at least one of the process chamber 10, the substrate support unit 11, and the gas injection unit 12 to perform substrate processing.

[0039] For this purpose, one or more RF power sources 30 are applied to at least one of the process chamber 10, the substrate support 11, and the gas injection unit 12, and a matching circuit 20 is provided between the RF power source 30 and a power supply line 110.

[0040] In addition, the RF power source 30 may apply one or more RF power sources, such as high frequency and low frequency, depending on process conditions.

[0041] On the other hand, the plasma device according to the present invention can be configured in various ways depending on its usage, and the essential component is a process chamber 10 which forms a sealed processing space S in which plasma is generated, and a gas injection unit 12, a substrate support unit 11, etc. can be additionally provided depending on its usage.

[0042] That is, the plasma apparatus according to the present invention includes a process chamber 10 forming a sealed processing space S in which plasma is generated, and a plasma apparatus current / voltage / power measurement module that measures RF voltage, current, and power of input waves and reflected waves generated by the plasma generated in the processing space S.

[0043] The plasma device further includes a substrate support part 11 provided in the processing space S on which the substrate W is placed, and a gas injection part 12 that injects gas for performing a process into the processing space S, and at this time, the substrate W can be processed by plasma.

[0044] Meanwhile, the current / voltage / power measuring module 100 according to the present invention is disposed adjacent to at least one of the first power supply line 110 for applying power to the RF power source 30 and the ground line 120 for grounding, as shown in FIG. 1, and is characterized in that it measures the RF voltage, current, and power of the input wave and reflected wave generated by the plasma generated in the processing space S.

[0045] At this time, the current / voltage / power measurement module 100 according to the present invention can be configured in various ways according to the principles of current, voltage, and especially power measurement.

[0046] As an example, as shown in FIGS. 7 and 8, a current / voltage / power measurement module 100 according to the present invention may include a first directional coupler 300 adjacent to the application line for measuring power output by an input wave, a second directional coupler 400 adjacent to the application line for measuring power output by a reflected wave, a voltage measurement unit 500 disposed adjacent to the application line 100 for measuring the RF voltage using the principle of a capacitor, and a current measurement unit 600 disposed adjacent to the application line 100 for measuring the RF current using the principle of inductance.

[0047] The voltage measuring unit 500 is provided adjacent to the application line 100 and is configured to measure the RF voltage by utilizing the principle of a capacitor, and various configurations are possible.

[0048] As an example, the voltage measurement unit 500 Figure 8 1, a capacitor unit 510 is provided adjacent to the application line 100, and a third output port unit 520 is connected to the capacitor unit 510 to measure the voltage of the input wave. 720 and

[0049] The capacitor unit 510 is configured to be provided adjacent to the application line 100, and is provided at a predetermined interval from the outer periphery of the application line 100, and may be configured in various ways, such as being made of a capacitor conductor such as copper that constitutes a capacitor in a circuit.

[0050] At this time, it is needless to say that a dielectric material for adjusting the dielectric constant is formed between the outer circumferential surface of the application line 100 and the capacitor conductor.

[0051] The third output port portion 720 is a component that is connected to the capacitor unit 510 and measures the voltage of the incident wave applied to the application line 100, and various configurations are possible.

[0052] In particular, the third output port portion 720 can be formed in the form of a wiring on the edge of a PCB board 220, which will be described later.

[0053] In addition, the third output port portion 720 is preferably connected to the middle position based on the length of the capacitor portion 510.

[0054] On the other hand, the third output port portion 720 and a branch point between the capacitor unit 510 and a first ground unit 740 At least one of a resistive element section 520 and a third filter section 530 may be provided between them.

[0055] The first grounding portion 740 is a configuration for grounding through coupling with an external timing, and can be configured in the same manner as a ground terminal described later.

[0056] The resistor section 520 and the third filter section 530 are connected to the third output port section 720 The third filter unit 530 is an electric element provided to stably measure the voltage of the input wave based on an electric signal output to the third filter unit 530, and may be configured by a combination of a resistor, a capacitor, a coil, and the like.

[0057] The current measuring unit 600 is provided adjacent to the application line 100 and measures the RF current by utilizing the principle of inductance, and may have various configurations.

[0058] As an example, the current measuring unit 600 may include Figure 8 1, an inductance unit 610 is provided adjacent to the application line 100, and a fourth output port unit 620 is connected to the inductance unit 610 to measure the current flowing through the application line 100. 710 may include.

[0059] The inductance unit 610 is configured to be provided adjacent to the application line 100, and is provided at a predetermined interval from the outer periphery of the application line 100, and can be configured in various ways, such as being configured with inductance wiring made of a copper material or the like that constitutes inductance in a circuit.

[0060] The fourth output port portion 710 is connected to the inductance unit 610 and measures the current flowing through the application line 100, and various configurations are possible.

[0061] In particular, the fourth output port portion 710 can be formed in the form of a wiring on the edge of a PCB board 220, which will be described later.

[0062] In addition, the fourth output port portion 710 is preferably connected to one end based on the length of the inductance part 610.

[0063] On the other hand, the fourth output port portion 710 and a branch point between the inductance portion 610 and a second ground portion 730 At least one of a resistive element section 620 and a fourth filter section 630 may be provided between them.

[0064] The second grounding portion 730is a configuration for grounding through coupling with an external timing, and can be configured similarly to a ground terminal described later.

[0065] The resistor unit 620 and the fourth filter unit 630 4 The fourth filter unit 630 is an electrical element that is provided so as to stably measure the voltage of the input wave based on the electrical signal output to the output port unit 710, and may be configured by a combination of resistors, capacitors, coils, etc.

[0066] The first directional coupler 300 is adjacent to the application line and serves to measure the power output by an input wave, and may have various configurations.

[0067] As an example, the first directional coupler 300 includes: Figure 7 3, the LC combination circuit unit 310 may include an LC combination circuit unit 310 that is adjacent to the application line 100 and that is configured by combining a capacitor element 311 and an inductance element 312 that interact with the application line 100 and that is wound based on the direction of an incident wave flowing through the application line 100; a first reference resistor element 321 having one end grounded and the other end connected to one end of the LC combination circuit unit 310; and a resistor element unit 320 that includes a second reference resistor element 322 having one end connected to a first output port 323 and the other end connected to one end of the LC combination circuit unit 310.

[0068] The LC circuit combination unit 310 is adjacent to the application line 100 and is configured by combining a capacitor element 311 and an inductance element 312 that interact with the application line 100, and is wound based on the direction of an incident wave flowing through the application line 100. In particular, various configurations are possible, such as a combination of a capacitor element 311 and an inductance element 312.

[0069] In particular, in consideration of measuring the power of the incident wave, it is preferable that the inductance element 312 has a forward winding structure based on the traveling direction of the incident wave, i.e., a counterclockwise winding structure based on the traveling direction of the incident wave.

[0070] In addition, taking into consideration that the capacitor element 311 and the inductance element 312 form a structure that is merged with each other, when one coil is formed as a whole, the plate surface can be formed in a direction facing the outer circumferential surface of the application line 100 so that a part of the coil forms a capacitor portion.

[0071] The LC combination circuit section 310 can configure one circuit by combining a capacitor element 311 and an inductance element 312.

[0072] The resistor section 310 includes a first reference resistor 321 having one end grounded and the other end connected to one end of the LC combination circuit section 310, and a second reference resistor 322 having one end connected to a first output port 323 and the other end connected to one end of the LC combination circuit section 310, and various configurations are possible.

[0073] The first reference resistor 321 has one end grounded and the other end connected to one end of the LC combination circuit unit 310, and may have a preset resistance value, for example, 50Ω.

[0074] Here, when the first reference resistor 321 is provided on the PCB board 220, it may be formed in the shape of a ground terminal 324 on the edge of the PCB board 220, which will be described later.

[0075] The second reference resistor element 322 has one end connected to the first output port 323 and the other end connected to one end of the LC combination circuit unit 310, and can have a preset resistance value, for example, the same resistance value as the first reference resistor element 321.

[0076] Here, the first output port 323 can be formed as a terminal on the edge of a PCB board 220, which will be described later.

[0077] Meanwhile, the first directional coupler 300 may include one or more filter units 330 at a branch point between the resistor unit 320 and the LC combination circuit unit 310 .

[0078] The filter unit 330 is an electric element provided at a branch point between the resistor unit 320 and the LC combination circuit unit 310, and may be formed of a capacitor, a coil, or the like.

[0079] The second directional coupler 400 is adjacent to the application line and serves to measure the power output by the reflected wave, and may have various configurations.

[0080] As an example, the second directional coupler 400 includes: Figure 7 4, the LC combination circuit unit 410 may include an LC combination circuit unit 410 in which a capacitor element 411 and an inductance element 412 that are adjacent to the application line 100 and interact with the application line 100 are combined and wound with reference to the direction of a reflected wave flowing through the application line 100, and a resistance element unit 420 including a third reference resistance element 421 having one end grounded and the other end connected to one end of the LC combination circuit unit 410, and a fourth reference resistance element 422 having one end connected to a second output port 423 and the other end connected to one end of the LC combination circuit unit 410.

[0081] The LC circuit combination unit 410 is configured by combining a capacitor element 411 and an inductance element 412, and various configurations are possible.

[0082] In particular, in consideration of measuring the power of the reflected wave, it is preferable that the inductance element 412 has a forward winding structure based on the traveling direction of the reflected wave, i.e., a counterclockwise winding structure based on the traveling direction of the reflected wave - since the incident wave and the reflected wave are in opposite directions, the winding direction of the inductance element 312 of the first directional coupler 300 and the winding direction of the inductance element 412 of the second directional coupler 400 are opposite to each other.

[0083] In addition, taking into consideration that the capacitor element 411 and the inductance element 412 form a structure that is merged with each other, when one coil is formed as a whole, the plate surface can be formed in a direction facing the outer circumferential surface of the application line 100 so that a part of the coil forms a capacitor portion.

[0084] The LC combination circuit section 410 can configure one circuit by combining a capacitor element 411 and an inductance element 412.

[0085] The resistor section 420 includes a third reference resistor 421 having one end grounded and the other end connected to one end of the LC combination circuit section 410, and a fourth reference resistor 422 having one end connected to a second output port 423 and the other end connected to one end of the LC combination circuit section 410, and various configurations are possible.

[0086] The third reference resistor 421 has one end grounded and the other end connected to one end of the LC combination circuit unit 410, and may have a preset resistance value, for example, 50Ω.

[0087] Here, when the third reference resistor 421 is provided on the PCB board 220, it may be formed in the shape of a ground terminal 424 on the edge of the PCB board 220, which will be described later.

[0088] The fourth reference resistor element 422 has one end connected to the second output port 423 and the other end connected to one end of the LC combination circuit unit 410, and can have a preset resistance value, for example, the same resistance value as the third reference resistor element 421.

[0089] Here, the second output port 423 may be formed as a terminal on the edge of a PCB board 220 described below.

[0090] Meanwhile, the second directional coupler 400 may include one or more filter units 430 at a branch point between the resistor unit 420 and the LC combination circuit unit 410 .

[0091] The filter unit 430 is an electric element provided at a branch point between the resistor unit 420 and the LC combination circuit unit 410, and may be composed of a capacitor, a coil, or the like.

[0092] Meanwhile, the current / voltage / power measurement module of the plasma device according to the present invention having the above-mentioned configuration can be configured as one module including one PCB board 220.

[0093] That is, the current / voltage / power measurement module of the plasma device according to the present invention may include a PCB board 220 having an insertion portion 210 having an inner diameter larger than the outer diameter of the application wire 100 so that at least a portion of the application wire 100 can be inserted therein.

[0094] In order to form the same conditions for the capacitor elements 311 and 411 and the inductance elements 312 and 412 described later, the insertion portion 210 may be formed in various shapes such as an arc or a circle with one side open, taking into consideration that the end face shape of the application line 100 is circular.

[0095] In addition, depending on conditions, such as when the end surface of the application line 100 is formed in a rectangular shape, the shape of the insertion part 210 may be formed in a polygonal shape.

[0096] Meanwhile, the capacitor element 311 of the first directional coupler 300 and the capacitor element 411 of the second directional coupler 400 include a plurality of capacitor portions 311a, 411a formed at intervals along the circumferential direction on the inner peripheral surface of the insertion portion 210 as shown in FIGS. 2 to 5, and the inductance element 312 of the first directional coupler 300 and the inductance element 412 of the second directional coupler 400 include winding portions 340, 440 that penetrate the PCB board 220 and are wound one or more times to connect the adjacent capacitor portions 311a, 411a to their terminals.

[0097] As a specific example, the capacitor element 311 of the first directional coupler 300 and the capacitor element 411 of the second directional coupler 400 may include a plurality of capacitor parts 311a, 411a formed of a conductive material such as copper along a predetermined arc angle on the inner peripheral surface of the insertion part 210.

[0098] The plurality of capacitor portions 311a, 411a are formed in a rectangular shape in a developed state, and can be formed along the inner circumferential surface of the insertion portion 210 at preset intervals.

[0099] Meanwhile, the winding parts 340, 440, the inductance element 312 of the first directional coupler 300 and the inductance element 412 of the second directional coupler 400, are configured to penetrate the PCB board 220 and connect their ends to the adjacent capacitor parts 311a, 411a by winding one or more times, and various configurations are possible depending on the structure of the coil winding.

[0100] As a specific example, the winding portions 340, 440 may include metal pattern portions 810, 820, 830, and 840 formed on the upper and lower surfaces of the PCB board 220, and a vertical connection portion 850 that penetrates the PCB board 220 vertically and electrically connects the metal pattern portions 810, 820, 830, and 840.

[0101] The metal pattern units 810, 820, 830, and 840 are metal patterns formed on the top and bottom surfaces of the PCB board 220, and are configured to form one coil together with the vertical connection unit 850, and may be formed in various patterns.

[0102] For example, the metal pattern units 810, 820, 830, and 840 may be a first upper component 810 that extends in a radial direction from the top surface of the PCB board 220 at a rear end of the capacitor unit 311a in a clockwise direction and has a first connection point 811 at its end portion, and a first lower component 821 that extends in a radial direction from the bottom surface of the PCB board 220 at a front end of the capacitor unit 311a in a clockwise direction and has a second connection point 821 at its end portion. 20, a second lower component 830 connecting a third connection point 832 set immediately below the first connection point 811 to a fourth connection point 831 set on the bottom surface of the PCB board 220 between the capacitor units 311a adjacent to each other in a clockwise direction, and a second upper component 840 connecting a fifth connection point 841 located immediately above the third connection point 831 to a sixth connection point 842 set immediately above the second connection point 821.

[0103] The first upper component 810, the second upper component 840, the first lower component 820 and the second lower component 830 are portions on the top and bottom surfaces of the PCB board 220, respectively, in which an electrically conductive material such as copper is formed, and are configured to form an inductance component as a whole together with the capacitor parts 311a, 411a and the vertical connection part 850 described below, and various configurations are possible.

[0104] Meanwhile, the first connection point 811 to the sixth connection point 842 are positions set as portions where the vertical connection portion 850 is connected vertically in the first upper component 810, the second upper component 840, the first lower component 820, and the second lower component 830, and various configurations are possible depending on the structure in which the vertical connection portion 850 is connected to the first upper component 810, the second upper component 840, the first lower component 820, and the second lower component 830.

[0105] In particular, the fifth connection point 841 and the fourth connection point 831 may be formed closer to the inner circumferential surface of the insertion portion 210 than the first connection point 811 and the second connection point 821 .

[0106] The vertical connection portion 850 is configured to penetrate the PCB board 220 vertically and electrically connect the metal pattern portions 810, 820, 830, and 840, and may include a plurality of connection members 850 that electrically connect vertically between the first connection point 811 and the third connection point 832, between the sixth connection point 842 and the second connection point 821, and between the fifth connection point 841 and the fourth connection point 831, respectively.

[0107] Meanwhile, the metal pattern part 441 and the vertical connection part 442 of the second directional coupler 400 are formed line-symmetrically with respect to the metal pattern parts 810, 820, 830, 840 and the vertical connection part 850 of the first directional coupler 300 with respect to the center of the insertion part 210 as shown in FIGS. 2 to 5, but detailed description thereof will be omitted.

[0108] For reference, the inductance component of the second directional coupler 400 is opposite to the inductance component of the first directional coupler 300, and when the formation basis of the first directional coupler 300 is clockwise, the formation basis of the second directional coupler 400 is counterclockwise.

[0109] Meanwhile, the PCB board 220 has the LC combination circuit units 310, 410 of the first directional coupler 300 and the second directional coupler 400 formed on one side, and the remaining components, i.e., the resistor element units 320, 420 and at least a part of the filter units 330, 430, formed on the other side.

[0110] In addition, the PCB board 220 having the above-mentioned configuration has a rectangular planar shape and can be divided into a first region in which the LC combination circuit unit 310, 410 and the insertion unit 210 are formed, and a second region adjacent to the first region in which the resistor element unit 320, 420 is located.

[0111] Meanwhile, the LC combination circuit section 310, 410 located in the first region and the resistive element section 320, 420 located in the second region may be electrically connected by one or more wiring patterns 390, 490 formed on at least one of the top and bottom surfaces of the PCB board 220.

[0112] In particular, the wiring patterns 390, 490 may be appropriately disposed and formed on the top and bottom surfaces of the PCB board 220 for efficient connection of the LC combination circuit parts 310, 410 located in the first region and the resistive element parts 320, 420 located in the second region.

[0113] In addition, between the first region and the second region, one or more wiring patterns 240 for blocking electromagnetic waves from the first region where the LC combination circuit units 310, 410 are provided may be formed on at least one of the top and bottom surfaces.

[0114] Meanwhile, the voltage measuring unit 500 is integrated into the PCB board 220 .

[0115] Specifically, the capacitor part 510 may be formed in the first region of the PCB board 220 along a circumferential direction at a preset angle on at least one of the inner surface of the insertion part 210, the top surface and the bottom surface of the edge of the insertion part 210.

[0116] Here, the capacitor unit 510 may be located between the capacitor element 311 of the LC combination circuit unit 310 of the first directional coupler 300 and the capacitor element 311 of the LC combination circuit unit 410 of the second directional coupler 400 based on the circumferential direction of the insertion unit 210.

[0117] In addition, the resistive element unit 520 may be provided in a second region of the PCB board 220 .

[0118] The resistor unit 520 may be electrically connected to the capacitor unit 510 through a wiring pattern 590 formed on at least one of the top and bottom surfaces of the PCB board 220 .

[0119] The third filter unit 530 is a branch point between the resistor unit 520 and the capacitor unit 510 , particularly a branch point branched from the wiring pattern 590 , and may be disposed at any position on the PCB board 220 .

[0120] Also, the current measuring unit 600 may be integrated into the PCB board 220 .

[0121] The inductance part 610 is formed in the first region by passing through the PCB board 220, being concentric with the voltage measuring part 500 and farther from the inner circumferential surface of the insertion part 210, and being wound one or more times.

[0122] Specifically, the inductance part 610 may include a plurality of upper components 611 extending in a radial direction of the insertion part 210 on the upper surface of the PCB board 220 and spaced apart along a circumferential direction, a lower component 612 connecting a first lower connection point located at a first phase part connection point at an outer end of the upper component 611, vertically penetrating the PCB board 220, and a second lower connection point at an inner other end of the adjacent upper component 611, a first connection part 613 electrically connecting the first phase part connection point and the first lower connection point vertically, and a second connection part 614 electrically connecting the second phase part connection point and a second lower connection point located at the second phase part connection point vertically penetrating the PCB board 220.

[0123] Meanwhile, the resistive element unit 620 may be provided in a second region of the PCB board 220 .

[0124] The resistance element unit 620 may be electrically connected to the inductance unit 610 through a wiring pattern 690 formed on at least one of the top and bottom surfaces of the PCB board 220 .

[0125] The fourth filter unit 630 is a branch point between the resistance element unit 620 and the inductance unit 610 , particularly at a wiring pattern 690 , and may be disposed at any position on the PCB board 220 .

[0126] Meanwhile, the PCB board 220 includes a first output port 323 and a ground terminal 324, a second output port 423 and a ground terminal 424, a first ground portion 425, and a second output port 423 and a ground terminal 424, from the second region side. 740 , 2nd grounding section 730 , 3rd output port Part 720 and the fourth output port Part 710 However, it can be formed in the form of a terminal on the edge.

[0127] Terminals formed on the PCB board 220 are connected to an external module, and electrical signals are output through the output ports 323, 423, 710, and 720, making it possible to measure current / voltage / power.

[0128] Meanwhile, the current / voltage / power measuring module 200 according to the present invention having the above-mentioned configuration can measure the power of an incident wave and a reflected wave by using the first directional coupler 300 and the second directional coupler 400.

[0129] However, since the electrical signals output through the first directional coupler 300 and the second directional coupler 400 contain a lot of noise, it is necessary to correctly extract and check the noise.

[0130] Therefore, the current / voltage / power measurement module 200 according to the present invention can measure the voltage and current applied to the application line 100 and the power of the incident wave and reflected wave through a lookup table, relational expressions, etc. that are pre-constructed through experiments conducted in advance according to process conditions.

[0131] Meanwhile, in the present invention, a configuration including all of the voltage measuring unit 500, the current measuring unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power has been described. However, the present invention can of course also be configured with a combination of at least one of the voltage measuring unit 500, the current measuring unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power, if necessary.

[0132] In particular, in the present invention, as necessary, at least one combination of the voltage measuring unit 500, the current measuring unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power can be implemented on a single PCB.

[0133] The above is merely a description of some of the preferred embodiments that can be implemented by the present invention, and as is well known, the scope of the present invention should not be interpreted as being limited to the above-mentioned embodiments, and the above-mentioned technical ideas of the present invention and the technical ideas underlying them are all included in the scope of the present invention. [Explanation of symbols]

[0134] 10 Process chamber 11 Substrate support 12 Gas injection section 100 Applied line 200 Current / Voltage / Power Measurement Module

Claims

1. a process chamber in which a plasma is generated and which defines an enclosed processing space for performing substrate processing; a substrate support provided in the processing space and on which a substrate is placed; a gas injection unit for injecting a gas for performing a process into the processing space; Including, 2. A substrate processing apparatus for performing substrate processing by applying one or more RF power sources to at least one of the process chamber, the substrate support unit, and the gas injection unit, a power supply line for supplying the RF power and a ground line for grounding the RF power supply, the power supply line being adjacent to at least one of the power supply lines, and measuring an RF voltage, a current, and an input wave and a reflected wave generated by the plasma generated in the processing space; a first directional coupler adjacent to the application line for measuring the power output by an input wave; a second directional coupler adjacent to the application line for measuring the power output by the reflected wave; a voltage measuring unit provided adjacent to the application line and measuring the RF voltage by utilizing the principle of a capacitor; a current measuring unit provided adjacent to the application line and configured to measure the RF current by utilizing the principle of inductance; Including, The first directional coupler and the second directional coupler include A current / voltage / power measuring module for a plasma device, characterized in that the winding directions of the inductance elements are different.

2. The first directional coupler includes: an LC combination circuit unit that is adjacent to the application line, that is combined with a capacitor element and an inductance element that interact with the application line, and that is wound based on the direction of an incident wave flowing through the application line; a resistor element section including a first reference resistor element having one end grounded and the other end connected to one end of the LC combination circuit section, and a second reference resistor element having one end connected to a first output port and the other end connected to one end of the LC combination circuit section, The second directional coupler includes: an LC combination circuit unit that is adjacent to the application line, that is combined with a capacitor element and an inductance element that interact with the application line, and that is wound based on the direction of a reflected wave flowing through the application line; 2. The current / voltage / power measurement module for a plasma device according to claim 1, further comprising: a resistance element section including: a third reference resistance element having one end grounded and the other end connected to one end of the LC combination circuit section; and a fourth reference resistance element having one end connected to the second output port and the other end connected to one end of the LC combination circuit section.

3. the first directional coupler includes one or more filter units provided at a branch point between the resistive element unit and the LC combination circuit unit; 3. The current / voltage / power measurement module for a plasma device according to claim 2, wherein the second directional coupler is provided with one or more filter sections at a branching point between the resistive element section and the LC combination circuit section.

4. a PCB board having an insertion portion having an inner diameter larger than an outer diameter of the power line so that at least a portion of the power line can be inserted therein; the capacitor element of the first directional coupler and the capacitor element of the second directional coupler each include a plurality of capacitor portions formed at intervals along a circumferential direction on an inner circumferential surface of the insertion portion, 3. The current / voltage / power measurement module for a plasma device according to claim 2, wherein the inductance element of the first directional coupler and the inductance element of the second directional coupler include a winding portion that penetrates the PCB board and winds one or more times to connect the adjacent capacitor portions and their terminals.

5. 5. The current / voltage / power measurement module for a plasma device as described in claim 4, wherein the winding portion includes a metal pattern portion formed on the top and bottom surfaces of the PCB board, and a vertical connection portion that penetrates the PCB board from top to bottom and electrically connects the metal pattern portions.

6. The voltage measurement unit is a capacitor portion formed along a circumferential direction at a preset angle on at least one of an inner peripheral surface of the insertion portion and an upper surface and a bottom surface of the edge of the insertion portion; 5. The current / voltage / power measurement module for a plasma device according to claim 4, further comprising: a third output port portion connected to the capacitor portion.

7. 7. The current / voltage / power measurement module for a plasma device according to claim 6, wherein at least one of a resistive element section and a third filter section is provided between a branch point between the capacitor section and the third output port section and a first ground section.

8. The current measuring unit is an inductance section that is concentric with the voltage measurement section and farther from the voltage measurement section with respect to an inner circumferential surface of the insertion section, that penetrates the PCB board, and that is wound one or more times; 6. The current / voltage / power measurement module for a plasma device according to claim 5, further comprising: a fourth output port portion connected to the inductance portion.

9. 9. The current / voltage / power measurement module for a plasma device according to claim 8, characterized in that at least one of a resistive element section and a fourth filter section is provided between a branch point between the inductance section and the fourth output port section and a second ground section.

10. a process chamber forming an enclosed processing space in which a plasma is generated; a current / voltage / power measurement module for measuring RF voltage, current, and power of input and reflected waves generated by the plasma generated in the processing space; The plasma device is characterized in that the plasma device is a current / voltage / power measurement module according to any one of claims 1 to 9.

11. a substrate support provided in the processing space and on which a substrate is placed; a gas injection unit for injecting a gas for performing a process into the processing space, 11. The plasma device according to claim 10, wherein a substrate is processed by plasma.

Images