Coil component and manufacturing method thereof
Patent Information
- Application Number
- JP2020164266
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2020-09-30
- Publication Date
- 2025-03-03
- Estimated Expiration
- 2040-09-30
AI Technical Summary
【0014】 このように、本発明によれば、スパイラル状のコイルパターンが積層された構造を有するコイル部品及びその製造方法において、コイルパターンの変形を防止することが可能となる。
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Abstract
Description
[Technical field]
[0001] The present invention relates to a coil component and a manufacturing method thereof, and more particularly to a coil component having a structure in which spiral coil patterns are laminated, and a manufacturing method thereof. [Background technology]
[0002] A known coil component having a structure in which spiral coil patterns are stacked is the coil component described in Patent Document 1. The coil component described in Patent Document 1 includes a coil section including multiple coil patterns and a magnetic base body in which the coil section is embedded. With a structure in which the coil section is embedded in the magnetic base body in this way, it is possible to obtain a high inductance value. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] JP 2019-140202 A Summary of the Invention [Problem to be solved by the invention]
[0004] However, in the process of embedding the coil portion in the magnetic body, strong pressure is applied to the coil pattern located at the end in the axial direction, which may result in deformation of the coil pattern located at the end in the axial direction.
[0005] Therefore, an object of the present invention is to prevent deformation of a coil pattern in a coil component having a structure in which spiral coil patterns are stacked, and in a manufacturing method thereof. [Means for solving the problem]
[0006] The coil component according to the present invention comprises a coil section having a structure in which a plurality of interlayer insulating films and a plurality of spirally wound coil patterns are alternately stacked in the axial direction, and a magnetic base body in which the coil section is embedded, wherein the plurality of coil patterns include at least a first coil pattern located at one end in the axial direction and a second coil pattern different from the first coil pattern, the plurality of interlayer insulating films include a first interlayer insulating film covering at least the first coil pattern from the radial direction, and a second interlayer insulating film covering at least the second coil pattern from the radial direction, the magnetic base body has a first portion located in an inner diameter region of the coil section, and the radial width of the first interlayer insulating film located between the first portion of the magnetic base body and the innermost turn of the first coil pattern is wider than the radial width of the second interlayer insulating film located between the first portion of the magnetic base body and the innermost turn of the second coil pattern.
[0007] According to the present invention, since the width of the first interlayer insulating film is expanded on the innermost side, the pressure applied to the innermost turn of the first coil pattern is reduced when the magnetic body is embedded in the inner diameter region of the coil part, thereby making it possible to prevent deformation of the first coil pattern.
[0008] In the present invention, the first interlayer insulating film may further cover the first coil pattern from one end side in the axial direction, which makes it possible to correctly form the first coil pattern even if the base of the first coil pattern is not very flat.
[0009] In the present invention, the second coil pattern may be adjacent to the first coil pattern in the axial direction, or may be located at the other end in the axial direction. In either case, it is possible to ensure a sufficient pattern width of the second coil pattern.
[0010] In the present invention, the magnetic body further has a second portion located in a radially outer region of the coil portion, and the radial width of the first interlayer insulating film located between the second portion of the magnetic body and the outermost turn of the first coil pattern may be wider than the radial width of the second interlayer insulating film located between the second portion of the magnetic body and the outermost turn of the second coil pattern. This reduces pressure applied to the outermost turn of the first coil pattern when the magnetic body is embedded in the outer region of the coil portion.
[0011] In the present invention, the radial width of the first interlayer insulating film located between two radially adjacent turns among the multiple turns constituting the first coil pattern may be the same as the radial width of the second interlayer insulating film located between two radially adjacent turns among the multiple turns constituting the second coil pattern, thereby making it possible to ensure a sufficient pattern width for the first and second coil patterns.
[0012] A manufacturing method for a coil component according to the present invention includes a first step of forming a coil portion by alternately stacking a plurality of interlayer insulating films and a plurality of spirally wound coil patterns in the axial direction, and a second step of embedding the coil portion with a magnetic base body, wherein the plurality of coil patterns include at least a first coil pattern to be formed last and a second coil pattern different from the first coil pattern, the plurality of interlayer insulating films include a first interlayer insulating film covering at least the first coil pattern from the radial direction, and a second interlayer insulating film covering at least the second coil pattern from the radial direction, the magnetic base body has a first portion located in an inner diameter region of the coil portion, and the radial width of the first interlayer insulating film located between the first portion of the magnetic base body and the innermost turn of the first coil pattern is wider than the radial width of the second interlayer insulating film located between the first portion of the magnetic base body and the innermost turn of the second coil pattern.
[0013] According to the present invention, even if the flatness of the base of the first coil pattern is low, the first coil pattern can be formed correctly, and deformation of the first coil pattern can be prevented in the process of embedding a magnetic base body in the inner diameter region of the coil portion. Effect of the Invention
[0014] As described above, according to the present invention, in a coil component having a structure in which spiral coil patterns are stacked, and in a manufacturing method thereof, it is possible to prevent deformation of the coil pattern. [Brief description of the drawings]
[0015] [Figure 1] FIG. 1 is a schematic cross-sectional view for illustrating the structure of a coil component 1 according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic plan view of the conductor layer 10. As shown in FIG. [Diagram 3] FIG. 3 is a schematic plan view of the conductor layer 20. As shown in FIG. [Figure 4] FIG. 4 is a schematic plan view of the conductor layer 30. As shown in FIG. [Diagram 5] FIG. 5 is a schematic plan view of the conductor layer 40. As shown in FIG. [Figure 6] FIG. 6 is a process diagram illustrating a method for manufacturing the coil component 1. [Figure 7] FIG. 7 is a process diagram illustrating a method for manufacturing the coil component 1. [Figure 8] FIG. 8 is a process diagram illustrating a method for manufacturing the coil component 1. [Figure 9] FIG. 9 is a process diagram illustrating a method for manufacturing the coil device 1. [Figure 10] FIG. 10 is a process chart for explaining the method of manufacturing the coil component 1. [Figure 11] FIG. 11 is a process chart for explaining the method of manufacturing the coil device 1. [Figure 12] FIG. 12 is a process chart for explaining the method of manufacturing the coil device 1. As shown in FIG. [Figure 13]FIG. 13 is a process chart for explaining the method of manufacturing the coil device 1. [Figure 14] FIG. 14 is a process chart for explaining the method of manufacturing the coil device 1. [Figure 15] FIG. 15 is a process chart for explaining a method for manufacturing the coil device 1. As shown in FIG. [Figure 16] FIG. 16 is a process chart for explaining a method for manufacturing the coil device 1. As shown in FIG. [Figure 17] FIG. 17 is a process chart for explaining a method for manufacturing the coil device 1. [Figure 18] FIG. 18 is a process chart for explaining a method for manufacturing the coil device 1. [Figure 19] FIG. 19 is a process chart for explaining the method of manufacturing the coil device 1. [Figure 20] FIG. 20 is a process chart for explaining a method for manufacturing the coil device 1. As shown in FIG. [Figure 21] FIG. 21 is a process chart for explaining a method for manufacturing the coil device 1. As shown in FIG. [Figure 22] FIG. 22 is a process chart for explaining a method for manufacturing the coil device 1. As shown in FIG. [Figure 23] FIG. 23 is a process chart for explaining a manufacturing method of the coil device 1. [Figure 24] FIG. 24 is a process chart for explaining a manufacturing method of the coil device 1. [Diagram 25] FIG. 25 is a process chart for explaining a manufacturing method of the coil device 1. [Figure 26] FIG. 26 is a process chart for explaining a method for manufacturing coil device 1. [Figure 27] FIG. 27 is a process chart for explaining a manufacturing method of coil device 1. [Figure 28] FIG. 28 is a process chart for explaining a manufacturing method of coil device 1. [Figure 29] FIG. 29 is a process chart for explaining a manufacturing method of coil device 1. [Diagram 30] FIG. 30 is a process chart for explaining a manufacturing method of the coil device 1. [Diagram 31] FIG. 31 is a process chart for explaining a method for manufacturing coil device 1. As shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0016] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[0017] FIG. 1 is a schematic cross-sectional view for illustrating the structure of a coil component 1 according to an embodiment of the present invention.
[0018] Coil component 1 according to one embodiment of the present invention is a surface-mount type chip component suitable for use as an inductor for a power supply circuit, and includes magnetic bodies M1-M4 (magnetic body M2 appears in Figs. 2-5) and a coil section C embedded in magnetic bodies M1-M4, as shown in Fig. 1. The configuration of coil section C will be described later, but in this embodiment, four conductor layers having spiral coil patterns are laminated with interlayer insulating films between them, thereby forming one coil conductor.
[0019] The magnetic bodies M1 to M4 are composite members containing a metal magnetic filler made of iron (Fe) or a permalloy-based material and a resin binder, and constitute a magnetic path for a magnetic flux generated by passing a current through the coil portion C. As the resin binder, it is preferable to use a liquid or powdered epoxy resin. The materials constituting the magnetic bodies M1 to M4 may be the same as each other or may be different from each other. Here, the magnetic body M1 is a part embedded in the inner diameter region of the coil portion C, the magnetic body M2 is a part located in the outer region in the radial direction of the coil portion C, the magnetic body M3 is a part covering the coil portion C from one side in the axial direction (the lower side shown in FIG. 1), and the magnetic body M4 is a part covering the coil portion C from the other side in the axial direction (the upper side shown in FIG. 1).
[0020] As shown in FIG. 1, the coil section C has a configuration in which interlayer insulating films 51-55 and conductor layers 10, 20, 30, 40 are alternately laminated. Planar shapes of the conductor layers 10, 20, 30, 40 are shown in FIGS. 2-5, respectively. The conductor layers 10, 20, 30, 40 have spiral coil patterns CP1-CP4, and the upper or lower surfaces of the coil patterns CP1-CP4 are covered with interlayer insulating films 51-55. The side surfaces of the coil patterns CP1-CP4 are covered with parts of the interlayer insulating films 52-55, respectively. Here, the upper and lower surfaces of the coil patterns CP1-CP4 refer to surfaces that are approximately perpendicular to the coil axis, and the side surfaces of the coil patterns CP1-CP4 refer to surfaces that are approximately perpendicular to the radial direction.
[0021] The coil patterns CP1 to CP4 are connected to each other via through holes formed in the interlayer insulating films 52 to 54 to form one coil conductor. The conductor layers 10, 20, 30, and 40 are preferably made of copper (Cu). The interlayer insulating films 51 to 55 are all made of a resin material. Of the interlayer insulating films 51 to 55, at least the interlayer insulating films 52 to 54 are made of a non-magnetic material. The interlayer insulating film 51 located at the bottom layer and the interlayer insulating film 55 located at the top layer may be magnetic.
[0022] The conductor layer 10 is a first conductor layer formed on the upper surface of the magnetic body M2 via an interlayer insulating film 51, and includes a seed layer S1 as an undercoat. As shown in Fig. 2, the conductor layer 10 is provided with a coil pattern CP1 wound in a spiral shape with approximately three turns, and two electrode patterns 11 and 12. The lower surface of the coil pattern CP1 is covered with an interlayer insulating film 51, and the side and upper surfaces of the coil pattern CP1 are covered with an interlayer insulating film 52. The coil pattern CP1 and the electrode pattern 11 are connected, whereas the electrode pattern 12 is provided independently of the coil pattern CP1. The electrode patterns 11 and 12 are exposed from the magnetic bodies M1 to M4.
[0023] The conductor layer 20 is a second conductor layer formed on the upper surface of the conductor layer 10 via an interlayer insulating film 52, and includes a seed layer S2 as a base. As shown in Fig. 3, the conductor layer 20 is provided with a coil pattern CP2 wound in a spiral shape with approximately three turns, and two electrode patterns 21 and 22. The lower surface of the coil pattern CP2 is covered with an interlayer insulating film 52, and the side and upper surfaces of the coil pattern CP2 are covered with an interlayer insulating film 53. The electrode patterns 21 and 22 are provided independently of the coil pattern CP2. The electrode patterns 21 and 22 are exposed from the magnetic bodies M1 to M4.
[0024] The conductor layer 30 is a third conductor layer formed on the upper surface of the conductor layer 20 via an interlayer insulating film 53, and includes a seed layer S3 as a base. As shown in Fig. 4, the conductor layer 30 is provided with a coil pattern CP3 wound in a spiral shape with approximately three turns, and two electrode patterns 31 and 32. The lower surface of the coil pattern CP3 is covered with an interlayer insulating film 53, and the side and upper surfaces of the coil pattern CP3 are covered with an interlayer insulating film 54. The electrode patterns 31 and 32 are provided independently of the coil pattern CP3. The electrode patterns 31 and 32 are exposed from the magnetic bodies M1 to M4.
[0025] The conductor layer 40 is a fourth conductor layer formed on the upper surface of the conductor layer 30 via an interlayer insulating film 54, and includes a seed layer S4 as a base. As shown in Fig. 5, the conductor layer 40 is provided with a coil pattern CP4 wound in a spiral shape with approximately 2.5 turns, and two electrode patterns 41 and 42. The lower surface of the coil pattern CP4 is covered with an interlayer insulating film 54, and the side and upper surfaces of the coil pattern CP4 are covered with an interlayer insulating film 55. The coil pattern CP4 and the electrode pattern 42 are connected, whereas the electrode pattern 41 is provided independently of the coil pattern CP4. The electrode patterns 41 and 42 are exposed from the magnetic bodies M1 to M4.
[0026] The inner peripheral end of the coil pattern CP1 and the inner peripheral end of the coil pattern CP2 are connected through a via conductor that is a part of the conductor layer 20 and is provided to penetrate the interlayer insulating film 52. The outer peripheral end of the coil pattern CP2 and the outer peripheral end of the coil pattern CP3 are connected through a via conductor that is a part of the conductor layer 30 and is provided to penetrate the interlayer insulating film 53. The inner peripheral end of the coil pattern CP3 and the inner peripheral end of the coil pattern CP4 are connected through a via conductor that is a part of the conductor layer 40 and is provided to penetrate the interlayer insulating film 54. As a result, the coil patterns CP1 to CP4 are connected in series to form a coil conductor consisting of multiple turns. The electrode patterns 11, 21, 31, and 41 are used as one external terminal, and the electrode patterns 12, 22, 32, and 42 are used as the other external terminal.
[0027] As shown in Fig. 1, the radial width of the innermost turn of the coil pattern CP1 is W11, the radial width of the outermost turn of the coil pattern CP1 is W12, and the radial width of the turn located between the innermost and outermost turns of the coil pattern CP1 is W13. The radial width of the innermost turn of the coil pattern CP2 is W21, the radial width of the outermost turn of the coil pattern CP2 is W22, and the radial width of the turn located between the innermost and outermost turns of the coil pattern CP2 is W23. The radial width of the innermost turn of the coil pattern CP3 is W31, the radial width of the outermost turn of the coil pattern CP3 is W32, and the radial width of the turn located between the innermost and outermost turns of the coil pattern CP3 is W33. The radial width of the innermost turn of the coil pattern CP4 is W41, the radial width of the outermost turn of the coil pattern CP4 is W42, and the radial width of the turn located between the innermost and outermost turns of the coil pattern CP4 is W43.
[0028] Furthermore, the radial width of the interlayer insulating film 52 located between the innermost turn of the coil pattern CP1 and the magnetic body M1 is L11, the radial width of the interlayer insulating film 52 located between the outermost turn of the coil pattern CP1 and the magnetic body M2 is L12, and the radial width of the interlayer insulating film 52 located between two radially adjacent turns of the coil pattern CP1 is L13. The radial width of the interlayer insulating film 53 located between the innermost turn of the coil pattern CP2 and the magnetic body M1 is L21, the radial width of the interlayer insulating film 53 located between the outermost turn of the coil pattern CP2 and the magnetic body M2 is L22, and the radial width of the interlayer insulating film 53 located between two radially adjacent turns of the coil pattern CP2 is L23. The radial width of the interlayer insulating film 54 located between the innermost turn of the coil pattern CP3 and the magnetic body M1 is L31, the radial width of the interlayer insulating film 54 located between the outermost turn of the coil pattern CP3 and the magnetic body M2 is L32, and the radial width of the interlayer insulating film 54 located between two radially adjacent turns of the coil pattern CP3 is L33. The radial width of the interlayer insulating film 55 located between the innermost turn of the coil pattern CP4 and the magnetic body M1 is L41, the radial width of the interlayer insulating film 55 located between the outermost turn of the coil pattern CP4 and the magnetic body M2 is L42, and the radial width of the interlayer insulating film 55 located between two radially adjacent turns of the coil pattern CP4 is L43.
[0029] In this embodiment, L11, L21, L31 <L41 L12, L22, L32 <L42 It also satisfies the above requirements. W11, W21, W31>W41 W12,W22,W32>W42 That is, the widths W41, W42 of the innermost and outermost turns of the coil pattern CP4 are narrowed, and the widths L41, L42 of the interlayer insulating film 55 located between the innermost and outermost turns of the coil pattern CP4 and the magnetic bodies M1, M2 are enlarged accordingly. This is to prevent deformation of the coil pattern CP4 in the manufacturing process described later. The widths W41 and W42 may be the same.
[0030] However, the widths W41 and W42 do not need to be narrow all around, and there may be some parts that are the same as or slightly narrower than the widths W11, W21, W31, W12, W22, and W32. Similarly, the widths L41 and L42 do not need to be wide all around, and there may be some parts that are the same as or slightly narrower than the widths L11, L21, L31, L12, L22, and L32.
[0031] Furthermore, the width W43 of the coil pattern CP4 may be the same as the widths W13, W23, and W33 of the other coil patterns CP1 to CP3. These widths W13, W23, W33, and W43 may be the same as the widths W11, W21, W31, W12, W22, and W32 of the innermost and outermost turns of the coil patterns CP1 to CP3.
[0032] Similarly, the width L43 of the interlayer insulating film 55 may be the same as the widths L13, L23, and L33 of the other interlayer insulating films 52 to 54. These widths L13, L23, L33, and L43 may be the same as the widths L11, L21, L31, L12, L22, and L32 covering the innermost and outermost turns of the coil patterns CP1 to CP3.
[0033] Next, a method for manufacturing the coil component 1 according to the present embodiment will be described.
[0034] 6 to 31 are process diagrams illustrating a manufacturing method of the coil component 1 according to this embodiment. Although the process diagrams shown in Fig. 6 to 31 show a cross section corresponding to one coil component 1, in reality, a large number of coil components 1 can be produced simultaneously by using an aggregate substrate.
[0035] First, a support 60 is prepared in which metal foils 62, 63, such as copper (Cu), are provided on the surface of a base material 61 (FIG. 6). A release layer is provided at the interface between the metal foil 62 and the metal foil 63. Next, the metal foil 63 is patterned to form protrusions 63a on the metal foil 63 (FIG. 7).
[0036] Next, the interlayer insulating film 51 and the metal foil 64 are formed on the surface of the metal foil 63 provided with the protrusions 63a (FIG. 8). The interlayer insulating film 51 and the metal foil 64 can be formed by a lamination method. As a result, the shape of the protrusions 63a is transferred to the interlayer insulating film 51, and a thick region 51A and a thin region 51B are formed in the interlayer insulating film 51.
[0037] Next, after removing the metal foil 64 by etching (FIG. 9), a seed layer S1 is formed on the surface of the interlayer insulating film 51 by electroless plating (FIG. 10). Instead of forming the seed layer S1, the metal foil 64 may be used as it is as the seed layer, but since it is desirable for the seed layer S1 to be as thin as possible, it is preferable to remove the metal foil 64 and then newly form a thinner seed layer S1.
[0038] Next, a resist pattern R1 is formed on the surface of the seed layer S1 (FIG. 11). The resist pattern R1 is a negative pattern of the conductor layer 10. The radial width and interval of the resist pattern R1 correspond to the radial width of the interlayer insulating film 52 and the coil pattern CP1 to be formed later. That is, the radial width of the resist pattern R1 is L11-L13, and the radial interval of the resist pattern R1 is W11-W13. Since the base of the resist pattern R1 has a sufficiently high flatness, the radial widths L11-L13 of the resist pattern R1 can be sufficiently narrowed. In this state, the seed layer S1 is grown by electrolytic plating to form the conductor layer 10 (FIG. 12). At this time, a sacrificial pattern VP1 is formed in the inner diameter region of the coil pattern CP1. The position of the resist pattern R1 is adjusted so that the sacrificial pattern VP1 completely overlaps the thin-film region 51A of the interlayer insulating film 51 and partially overlaps the thick-film region 51B.
[0039] Next, after the resist pattern R1 is peeled off (FIG. 13), the seed layer S1 exposed in the peeled portion of the resist pattern R1 is removed by etching (FIG. 14). As a result, the coil pattern CP1 and the sacrificial pattern VP1 are electrically separated by the spiral slit SL. Next, an interlayer insulating film 52 and a metal foil 65 are formed on the surface of the conductor layer 10 so as to fill the slit SL (FIG. 15). The interlayer insulating film 52 and the metal foil 65 can be formed by a lamination method. Next, a resist pattern R2 is formed on the surface of the metal foil 65 (FIG. 16), and the metal foil 65 is etched using the resist pattern R2 as a mask (FIG. 17). As a result, the metal foil 65 is removed from the portion overlapping with the sacrificial pattern VP1.
[0040] Next, after peeling off the resist pattern R2 (FIG. 18), blast processing is performed using the metal foil 65 as a mask to expose the sacrificial pattern VP1 (FIG. 19). Next, after removing the metal foil 65 (FIG. 20), an opening 52a is formed in the interlayer insulating film 52 by laser processing (FIG. 21). Through the above steps, the formation of the conductor layer 10 and the interlayer insulating film 52 is completed.
[0041] 10 to 21 are then repeated to sequentially form the conductor layer 20, the interlayer insulating film 53, the conductor layer 30, and the interlayer insulating film 54 (FIG. 22). The conductor layers 20 and 30 include sacrificial patterns VP2 and VP3 that overlap the sacrificial pattern VP1. Next, a seed layer S4 is formed on the surface of the interlayer insulating film 54 by electroless plating, and then a resist pattern R4 is formed on the surface of the seed layer S4 (FIG. 23).
[0042] The radial width and interval of the resist pattern R4 correspond to the radial width of the interlayer insulating film 55 and the coil pattern CP4 to be formed later. That is, the radial width of the resist pattern R4 is L41 to L43, and the radial interval of the resist pattern R4 is W41 to W43. Then, after the seed layer S4 is grown by electrolytic plating, the resist pattern R4 is peeled off, and the seed layer S4 exposed in the peeled portion of the resist pattern R4 is removed by etching, thereby completing the conductor layer 40 (FIG. 24).
[0043] Next, an interlayer insulating film 55 is formed to cover the conductor layer 40, and then the interlayer insulating film 55 is patterned to expose the sacrificial pattern VP4 (FIG. 25). In this state, wet etching is performed to remove the sacrificial patterns VP1-VP4 (FIG. 26). The coil patterns CP1-CP4 are not etched because they are covered with the interlayer insulating films 51-55. As a result, a space S is formed in the inner diameter region of the coil patterns CP1-CP4.
[0044] Next, magnetic bodies M1-M3 are formed to fill this space S (FIG. 27). When forming the magnetic bodies M1-M3, strong pressure is applied to the innermost and outermost turns of the coil pattern CP4 located in the uppermost layer. However, in this embodiment, the radial width of the interlayer insulating film 55 covering the innermost and outermost turns of the coil pattern CP4 is increased, so that the pressure applied when forming the magnetic bodies M1-M3 does not deform the innermost and outermost turns of the coil pattern CP4.
[0045] Next, the support 60 is removed by peeling off the interface between the metal foils 62 and 63, the substrate is turned upside down and support 70 is attached (FIG. 28), and then the metal foil 63 is removed by etching (FIG. 29). In this state, an ashing process is performed to reduce the overall thickness of the interlayer insulating film 51 (FIG. 30). The amount of reduction in the thickness is adjusted so that all of the thin region 51B is removed and the thick region 51A remains. This exposes the magnetic body M1 embedded in the inner diameter region of the coil section C. Although not shown, the magnetic body M2 embedded in the outer region of the coil section C is also exposed.
[0046] Next, the magnetic body M4 is formed so as to cover the interlayer insulating film 51 (FIG. 31). Then, the support 70 is peeled off and the resultant is diced into individual pieces, completing the coil component 1 according to the present embodiment shown in FIG.
[0047] In this embodiment, the radial width of the interlayer insulating film 55 located between the magnetic body M1 and the innermost turn of the coil pattern CP4 is increased to L41, and the radial width of the interlayer insulating film 55 located between the magnetic body M2 and the outermost turn of the coil pattern CP4 is increased to L42, so that deformation of the innermost turn and the outermost turn of the coil pattern CP4 due to pressure when forming the magnetic bodies M1 to M3 can be prevented. Moreover, since the conductor layer 40 is located in the uppermost layer, there are cases in which the flatness of the base of the resist pattern R4 is not sufficient. Even in this case, by increasing the width of the interlayer insulating film 55, it becomes possible to stably form the resist pattern R4.
[0048] On the other hand, the coil patterns CP1 to CP3 located on the conductor layers 10, 20, and 30 have a sufficient conductor width, so that the DC resistance can be reduced. It is not essential that all the conductor widths of the coil patterns CP1 to CP3 are wider than the conductor widths W41 and W42 of the coil pattern CP4, but since the coil pattern CP1 located on the bottom layer is formed on a highly flat surface, it is possible to ensure a sufficient conductor width in terms of design. In addition, since the inner peripheral end of the coil pattern CP3 located directly below the coil pattern CP4 is connected to the inner peripheral end of the coil pattern CP4, it is preferable to make it wider than the conductor widths W41 and W42 so that a narrow conductor width section is not continuous. Furthermore, it is not necessary to increase both the width L41 of the interlayer insulating film 55 in contact with the magnetic body M1 and the width L42 of the interlayer insulating film 55 in contact with the magnetic body M2, and it is also possible to increase only the width L41 of the interlayer insulating film 55 in contact with the magnetic body M1.
[0049] Although a preferred embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the present invention, and it goes without saying that these modifications are also included within the scope of the present invention. [Explanation of symbols]
[0050] 1 Coil parts 10,20,30,40 Conductor layers 11,12,21,22,31,32,41,42 Electrode pattern 51~55 Interlayer insulating film 51A Thick film area 51B Thin film area 52a opening 60 Support 61 Base material 62~65 Metal foil 63a Protrusion 70 Support C Coil section CP1~CP4 coil pattern M1~M4 Magnetic element R1, R2, R4 resist pattern S space S1~S4 seed layer SL Slit VP1~VP4 Sacrifice Pattern
Claims
1. a coil portion having a structure in which a plurality of interlayer insulating films and a plurality of spirally wound coil patterns are alternately stacked in an axial direction; a magnetic body in which the coil portion is embedded; the plurality of coil patterns include at least a first coil pattern located at one end in the axial direction and a second coil pattern different from the first coil pattern, the plurality of interlayer insulating films include a first interlayer insulating film covering the first coil pattern at least in a radial direction, and a second interlayer insulating film covering the second coil pattern at least in the radial direction; the magnetic body has a first portion located in an inner diameter region of the coil portion, a width in the radial direction of the first interlayer insulating film located between the first portion of the magnetic body and an innermost turn of the first coil pattern is wider than a width in the radial direction of the second interlayer insulating film located between the first portion of the magnetic body and an innermost turn of the second coil pattern, A coil component, characterized in that the width of the innermost turn of the first coil pattern in the radial direction is narrower than the width of the innermost turn of the second coil pattern in the radial direction.
2. The coil component according to claim 1 , wherein the first interlayer insulating film further covers the first coil pattern from the one end side in the axial direction.
3. The coil component according to claim 1 , wherein the second coil pattern is adjacent to the first coil pattern in the axial direction.
4. The coil component according to claim 1 , wherein the second coil pattern is located at the other end in the axial direction.
5. the magnetic body further includes a second portion located in an outer region of the coil portion in the radial direction, 5. The coil component according to claim 1, wherein the radial width of the first interlayer insulating film located between the second portion of the magnetic body and the outermost turn of the first coil pattern is wider than the radial width of the second interlayer insulating film located between the second portion of the magnetic body and the outermost turn of the second coil pattern.
6. 6. The coil component according to claim 1, wherein a width in the radial direction of the first interlayer insulating film located between two radially adjacent turns among the plurality of turns constituting the first coil pattern is the same as a width in the radial direction of the second interlayer insulating film located between two radially adjacent turns among the plurality of turns constituting the second coil pattern.
7. a first step of forming a coil portion by alternately laminating a plurality of interlayer insulating films and a plurality of spirally wound coil patterns in an axial direction; a second step of embedding the coil portion in a magnetic body; the plurality of coil patterns include at least a first coil pattern to be formed last and a second coil pattern different from the first coil pattern; the plurality of interlayer insulating films include a first interlayer insulating film covering the first coil pattern at least in a radial direction, and a second interlayer insulating film covering the second coil pattern at least in the radial direction; the magnetic body has a first portion located in an inner diameter region of the coil portion, a width in the radial direction of the first interlayer insulating film located between the first portion of the magnetic body and an innermost turn of the first coil pattern is wider than a width in the radial direction of the second interlayer insulating film located between the first portion of the magnetic body and an innermost turn of the second coil pattern, A method for manufacturing a coil component, characterized in that the width in the radial direction of the innermost turn of the first coil pattern is narrower than the width in the radial direction of the innermost turn of the second coil pattern.
Citation Information
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