Color filter substrate, its manufacturing method and display panel

Abstract

The present application provides a color filter substrate, a manufacturing method thereof, and a display panel, the color filter substrate includes a color filter layer, the color filter layer includes a plurality of color resist units distributed on a base substrate, and an intersection area is formed between two adjacent color resist units. The color filter layer can directly function as an electrode on the color filter substrate, that is, the manufacturing step of the conductive film layer is omitted during the manufacturing of the color filter substrate, thereby improving the manufacturing efficiency of the color filter substrate and reducing the manufacturing cost of the color filter substrate.

Description

[Technical field]

[0001] The present application relates to the field of display technology, and in particular to a color filter substrate, its manufacturing method and a display panel. [Background technology]

[0002] Liquid crystal displays (LCDs) have many advantages such as thinness, power saving, and no radiation, and are widely used. For example, they are used in LCD televisions, mobile phones, personal digital assistants (PDAs), digital cameras, computer screens, and notebook computer screens. In general, a liquid crystal display panel is composed of a color filter substrate (Color Filter (CF)), a thin film transistor array substrate (Thin Film Transistor (TFT)), and a liquid crystal layer sandwiched between the color filter substrate and the thin film transistor array substrate. Summary of the Invention [Problem to be solved by the invention]

[0003] By providing pixel electrodes on the array substrate and a conductive film layer on the color filter substrate, an electric field capable of controlling the alignment of liquid crystal is formed between the array substrate and the color filter substrate. However, providing a conductive film layer on the color filter substrate lengthens the manufacturing process cycle of the color filter substrate, which affects manufacturing efficiency. [Means for solving the problem]

[0004] The embodiments of the present application provide a color filter substrate, a manufacturing method thereof, and a display panel, which solve the problem that providing a conductive film layer on a color filter substrate lengthens the manufacturing process cycle of the color filter substrate, thereby affecting manufacturing efficiency.

[0005] In a first aspect, according to an embodiment of the present application, A base substrate; A color filter substrate is provided, the color filter layer being provided on a base substrate, the color filter layer including a plurality of color resist units distributed on the base substrate, with an intersection area between two adjacent color resist units, and the manufacturing materials of the color resist units including a photoresist material and a conductive material.

[0006] In a second aspect, according to an embodiment of the present application, An array substrate, a liquid crystal layer, and a color filter substrate, The liquid crystal layer is provided between the array substrate and the color filter substrate, The color filter substrate is A base substrate; A display panel is provided, which includes a color filter layer disposed on a base substrate, the color filter layer including a plurality of color resist units distributed on the base substrate, with an intersection area between two adjacent color resist units, and the manufacturing materials of the color resist units include a photoresist material and a conductive material.

[0007] In a third aspect, according to an embodiment of the present application, Providing a base substrate; There is provided a method for manufacturing a color filter substrate, the method including: providing a color filter layer on a base substrate, the color filter layer including a plurality of color resist units, an intersection area being formed between two adjacent color resist units, and the manufacturing materials of the color resist units including a photoresist material and a conductive material. Effect of the Invention

[0008] In the color filter substrate according to the embodiment of the present application, the color resist units are made of photoresist material and conductive material, so that the color resist units have conductivity, and a crossing area is further formed between each two adjacent color resist units, so that the color resist units can form electrical conduction. In this way, the color filter layer can directly function as an electrode on the color filter substrate, and can also form an electric field between the color filter substrate and the array substrate to control the orientation of the liquid crystal in the liquid crystal layer. That is, the manufacturing step of the conductive film layer can be omitted when manufacturing the color filter substrate, thereby shortening the manufacturing process cycle of the color filter substrate, improving the manufacturing efficiency of the color filter substrate, and reducing the manufacturing cost of the color filter substrate. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic cross-sectional view of a display panel according to the prior art; [Diagram 2] 1 is a schematic cross-sectional view of a color filter substrate according to an embodiment of the present application. [Diagram 3] FIG. 2 is a schematic cross-sectional view of a black matrix in an embodiment of the present application. [Figure 4] 3 is a schematic diagram of an exposure process of a color filter layer in an embodiment of the present application. [Diagram 5] 2A to 2C are schematic diagrams illustrating steps in a method for manufacturing a color filter substrate according to an embodiment of the present application. [Figure 6] 3A to 3C are detailed views showing steps of a method for manufacturing a color filter substrate according to an embodiment of the present application. [Figure 7] 3A to 3C are detailed views showing steps of a method for manufacturing a color filter substrate according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the technical means in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor are all within the scope of protection of the present application.

[0011] According to the embodiment of the present application, a color filter substrate 100, a manufacturing method thereof, and a display panel are provided to shorten the manufacturing process cycle of the color filter substrate 100 and increase manufacturing efficiency.

[0012] Fig. 1 is a schematic cross-sectional view of a display panel of the prior art. As shown in Fig. 1, a liquid crystal display panel is generally composed of a color filter substrate 100 (Color Filter, CF), a thin film transistor array substrate 200 (Thin Film Transistor, TFT), liquid crystal (Liquid Crystal, LC) sandwiched between the color filter substrate 100 and the thin film transistor array substrate 200, and a sealant, and its forming process generally includes a manufacturing process of the array substrate 200 and the color filter substrate 100 (thin film, yellow light, etching and film peeling) in the former stage, a cell manufacturing process (bonding the TFT substrate and the CF substrate) in the middle stage, and a module assembly manufacturing process (pressure bonding of the driving IC and the printed wiring board) in the latter stage. Here, in the early stage of the array substrate 200 manufacturing process, the array substrate 200 and the color filter substrate 100 are mainly formed, thereby easily controlling the movement of the liquid crystal molecules; in the mid-stage cell manufacturing process, liquid crystal is mainly added between the array substrate 200 and the color filter substrate 100; and in the later stage of the module assembly manufacturing process, the driving IC is mainly pressed and the printed wiring board is aligned, thereby driving the rotation of the liquid crystal molecules to display an image.

[0013] A color filter substrate, i.e., a color filter substrate 100, is an important component of a liquid crystal display. The conventional manufacturing method of the color filter substrate 100 is to form a black matrix 30 (BM) on a base substrate 10, and then form a color resist layer (including red color resist, green color resist, and blue color resist). A conductive film layer needs to be formed on the color resist layer to form an electric field between the pixel electrode 40 on the array substrate 200 and the color resist layer, thereby controlling the movement of liquid crystal molecules in the electric field. The formation of the conductive film layer lengthens the manufacturing process cycle of the color filter substrate 100, and reduces the manufacturing efficiency of the color filter substrate 100.

[0014] 2 is a schematic cross-sectional view of a color filter substrate 100 according to an embodiment of the present application. As shown in FIG. 2, the color filter substrate 100 according to the embodiment of the present application includes a base substrate 10 and a color filter layer provided on the base substrate 10, the color filter layer including a plurality of color resist units 20 distributed on the base substrate 10, and an intersection region 21 between two adjacent color resist units 20, and the manufacturing materials of the color resist units 20 include a photoresist material and a conductive material.

[0015] Specifically, in this embodiment, the base substrate 10 may be a transparent glass substrate or a transparent flexible substrate, and is not limited here. The color resist unit 20 is prepared by carrying out coating, exposure, and development processes on the color resist material layer. The color resist material layer is formed by mixing at least a photoresist material and a conductive material, so that the color resist unit 20 not only has the property of transmitting a monochromatic spectrum, but also has a conductive performance. For example, the color resist unit 20 generally includes a red color resist unit 20, a green color resist unit 20, and a blue color resist unit 20, and each type of color resist unit 20 can transmit the corresponding red spectrum, green spectrum, and blue spectrum. The three color resist units 20 are all multiple, and constitute a plurality of pixel groups on the base substrate 10, and each pixel group includes a red color resist unit 20, a green color resist unit 20, and a blue color resist unit 20.

[0016] There is an intersection region 21 between two adjacent color resist units 20, i.e., the two adjacent color resist units 20 abut, overlap or cross each other at the intersection region 21, and the two adjacent color resist units 20 contact each other at the intersection region 21. Since the manufacturing material of the color resist units 20 includes a conductive material, the two adjacent color resist units 20 form electrical conduction at the intersection region 21, i.e., the color resist units 20 of the color filter layer form electrical conduction two by two, so that the entire color filter layer has a conductive property. The color filter layer having a conductive property can be used as a conductive film layer to form an electric field between the color filter layer and the pixel electrode 40 on the array substrate 200, thereby controlling the movement of the liquid crystal molecules of the liquid crystal layer 300. As a result, when manufacturing the color filter substrate 100, the manufacturing process of the conductive film layer can be omitted, thereby shortening the overall manufacturing process cycle of the color filter substrate 100 and improving the manufacturing efficiency of the color filter substrate 100.

[0017] The manufacturing materials of the color resist unit 20 include photoresist material and conductive material, and the main components of the photoresist material are solvent, pigment, dispersant, monomer, polymer, photoinitiator, etc. The photoresist material allows the color resist unit 20 to absorb a part of the spectrum of natural light and transmit only the corresponding monochromatic spectrum to form the primary color in the mixed color. The conductive material allows the color resist unit 20 to have conductivity, and the conductive material can be at least one of conductive nanomaterial, carbon material, or conductive organic polymer, or can be other types of conductive material.

[0018] The conductivity of the conductive film layer is related to its thickness, and the higher the conductivity and the thicker the thickness, the better the conductivity. In the color filter substrate 100 of the prior art, an ITO film layer is generally selected as the conductive film layer, and the thickness is generally controlled to 0.09-0.15 microns, so that the ITO film layer has sufficient electrical conductivity. In the color filter substrate 100 of the embodiment of the present application, in order to ensure the light transmittance of the color filter layer, the thickness of the color filter layer is controlled to 1.0-2.5 microns, that is, the electrical conductivity of the color resist unit 20 can reach about 1 / 10 of the ITO film layer to achieve the same conductive effect as the ITO film layer.

[0019] Exemplarily, the conductive material includes a conductive nanomaterial, and the weight percentage of the conductive nanomaterial in the color resist unit 20 is 10wt% to 50wt%, for example, 10wt%, 15wt%, 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt% or 50wt%. The conductive nanomaterial may be, for example, a silver nanowire, which has excellent light transmittance and bending resistance due to the nanoscale size effect in addition to the excellent electrical conductivity of silver. Therefore, when the silver nanowire is mixed into the photoresist material, not only can the color resist unit 20 have electrical conductivity, but also the influence on the light transmittance can be reduced. When the weight percentage of the conductive nanomaterial in the color resist unit 20 is set to 10wt% to 50wt%, not only can the color resist unit 20 have sufficient electrical conductivity, but also can avoid the proportion of the conductive nanomaterial being too high to affect the light transmittance of the color resist unit 20.

[0020] Exemplarily, the conductive material includes a carbon material, and the weight percentage of the carbon material in the color resist unit 20 is 10wt% to 50wt%, for example, 10wt%, 15wt%, 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt% or 50wt%. The carbon material may specifically be a nanocarbon material, for example, carbon nanoballoon, graphene, carbon nanotube, etc. The nanocarbon material improves the electrical conductivity of the color resist unit 20, so that the color filter layer not only has electrical conductivity but also has light transmittance. When the weight percentage of the carbon material in the color resist unit 20 is set to 10wt% to 50wt%, not only the color resist unit 20 has sufficient electrical conductivity, but also it is possible to avoid the proportion of the carbon material being too high to affect the light transmittance of the color resist unit 20.

[0021] Exemplarily, the conductive material includes a conductive organic polymer, and the weight percentage of the conductive organic polymer in the color resist unit 20 is 20wt% to 50wt%, for example, 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt% or 50wt%. The conductive organic polymer, i.e., the conductive polymer, may be, for example, at least one of polythiophene PEDOT, polyacetylene, and polyaniline. The conductive organic polymer has high compatibility with the photoresist material, and can ensure the light transmittance of the color resist unit 20 by reducing the influence on the light transmittance and color of the color resist unit 20. When the weight percentage of the conductive organic polymer in the color resist unit 20 is set to 20wt% to 50wt%, not only can the color resist unit 20 have sufficient electrical conductivity, but also can avoid the proportion of the conductive organic polymer being too high to affect the light transmittance of the color resist unit 20.

[0022] Two adjacent color resist units 20 have an intersection region 21, and the color resist units 20 of different colors mix together in the intersection region 21 to form a new color. Since the random scattered light cannot be emitted from the intersection region 21 after the color mixing, the random scattered light can be blocked. Therefore, the color filter substrate 100 does not need to be provided with a black matrix 30 for blocking the random scattered light. However, it is difficult to block the random scattered light for two adjacent color resist units 20 of the same color, since they cannot be mixed together in the intersection region 21 to form a new color. To solve this problem, it is necessary to provide a light blocking structure, for example, a black matrix 30, so as to block the intersection region between two adjacent color resist units 20 of the same color.

[0023] 3 is a schematic cross-sectional view of a black matrix 30 in an embodiment of the present application. Exemplarily, as shown in FIG. 2 and FIG. 3, the color filter substrate 100 further includes a black matrix 30 provided on the base substrate 10, the black matrix 30 including a plurality of opening regions 31 and a plurality of light-shielding regions 32 each located between two adjacent opening regions 31, each of the color resist units 20 being provided in each of the opening regions 31, and the two adjacent color resist units 20 forming an intersection region 21 on the side of the light-shielding region 32 away from the base substrate 10.

[0024] The function of the black matrix 30 is to block randomly scattered light from the liquid crystal layer 300, prevent color mixing between sub-pixels, and prevent ambient light from irradiating the channels of the thin film transistor array substrate 200. In manufacturing the color filter substrate 100, generally, the black matrix 30 is manufactured, and then a color filter layer is manufactured on the black matrix 30, so that each color resist unit 20 is located in each opening area 31 of the black matrix 30. The black matrix 30 is manufactured by a process of coating-exposing-developing a black material, and the color resist unit 20 is manufactured by a process of coating-exposing-developing a color resist material. In addition, in the process of coating the color resist material, the color resist material of two adjacent color resist units 20 is both coated on the light-shielding area 32 of the black matrix 30 to form an intersection area 21, and the photomask 50 needs to be adjusted accordingly to reserve the intersection area 21 during the exposure process.

[0025] For example, Fig. 4 is a schematic diagram of the exposure process of the color filter layer in the embodiment of the present application. As shown in Fig. 4, the photomask 50 can be a gray-tone mask 50, which has a transparent region 51 and a semi-transparent region 52, and the transparent region 51 corresponds to the opening region 31 of the black matrix 30, so that the color resist unit 20 can be formed after the exposure-development process, and the semi-transparent region 52 corresponds to the light-shielding region 32 of the black matrix 30, so that the intersection region 21 is solidified during the exposure process and the thickness of a part of the intersection region 21 is reduced, so that the intersection region 21 can be not only retained after the development process, but also the thickness of the intersection region 21 can be reduced, and the impact on the overall thickness of the color filter substrate 100 can be reduced.

[0026] In another manner of retaining the intersection regions 21, the photomask 50 may be a general photomask 50, i.e., it only includes light-transmitting regions and light-shielding regions, the light-transmitting regions correspond to the aperture regions 31 of the black matrix 30, and in the display panel, the aperture regions 31 of the black matrix 30 correspond one-to-one to the pixel electrodes 40 on the array substrate 200, and the projected area of ​​the aperture regions 31 is the same as the projected area of ​​the pixel electrodes 40. Therefore, in the process of exposing using the photomask 50, the area of ​​the light-transmitting regions of the photomask 50 can be appropriately increased so that the light-transmitting regions of the photomask 50 are larger than the aperture regions 31 of the black matrix 30. In this way, during the exposure process, some of the light-shielding areas 32 of the black matrix 30 are also exposed, so that the exposed area of ​​the color resist material can be increased, and finally, the projected area of ​​the color resist unit 20 on the array substrate 200 is greater than the projected area of ​​the opening area 31 of the black matrix 30 and the pixel electrode 40, that is, the intersection area 21 of the color resist unit 20 in the light-shielding area 32 of the black matrix 30 is solidified and retained.

[0027] 2 and 3, the width of each of the light-shielding regions 32 is gradually reduced from the end close to the base substrate 10 to the end away from the base substrate 10. In this way, not only is there no effect on the projection area of ​​the light-shielding regions 32 on the color filter substrate 100, i.e., no effect on the light-shielding area of ​​the light-shielding regions 32 against random scattered light, but two adjacent color resist units 20 can more smoothly form the intersection region 21 in the light-shielding region 32, and the conductivity of the entire color filter layer is ensured.

[0028] 5 is a schematic diagram showing steps of a method for manufacturing a color filter substrate 100 according to an embodiment of the present application. Exemplarily, as shown in FIG. 5, the method for manufacturing the color filter substrate 100 according to the embodiment of the present application includes the steps of: S100 providing a base substrate 10; A method for manufacturing a color filter substrate 100 is provided, the method including: providing a color filter layer on the base substrate 10, the color filter layer including a plurality of color resist units 20, an intersection region 21 being formed between two adjacent color resist units 20, and materials for manufacturing the color resist units 20 including a photoresist material and a conductive material.

[0029] In step S100, an initial cleaning is performed on the base substrate 10. In the initial cleaning, the base substrate 10 is placed in a cleaning tank, and dust or impurities on the surface of the base substrate 10 are removed by a chemical or physical method to prevent the dust or impurities from affecting the subsequent manufacturing process. Furthermore, chromium sputtering is performed on the cleaned base substrate 10 to improve the performance of the base substrate 10.

[0030] In step S200, the color resist units 20 can be formed through the process steps of coating, exposing, and developing a color resist material, and the color resist material is a mixture of a photoresist material and a conductive material. The color resist material can be prepared in advance before manufacturing the color filter substrate 100, so as to improve the manufacturing efficiency of the color filter layer. The color resist units 20 include three colors, red, green, and blue, and the three color resist units 20 are substantially made of the same material and differ in pigment. In the actual manufacturing process, generally, one color resist unit 20 is manufactured first, and then the second and third color resist units 20 are manufactured in sequence.

[0031] 6 is a detailed diagram illustrating a method for manufacturing a color filter substrate 100 according to an embodiment of the present application. Exemplarily, as shown in FIG. 6, the step of providing a color filter layer on the base substrate 10 includes: Step S210 of coating a color resist material layer on the base substrate 10, the color resist material layer including a display area forming a color resist unit 20 and an intersection area 21 between two adjacent display areas; Step S220 of exposing the color resist material layer using a gray-tone mask 50, the gray-tone mask 50 including a light-transmitting region 51 corresponding to the display region and a semi-light-transmitting region 52 corresponding to the intersection region 21; and Step S230, performing a development process on the exposed color resist material layer.

[0032] In step S220, the gray-tone mask 50 includes a transparent region 51 and a semi-transparent region 52, and the transparent region 51 corresponds to the opening region 31 of the black matrix 30, so that the color resist unit 20 can be formed after the exposure-development process, and the semi-transparent region 52 corresponds to the light-shielding region 32 of the black matrix 30, so that a part of the intersection region 21 is solidified during the exposure process, and the thickness of the part of the intersection region 21 is reduced, so that the intersection region 21 can be not only reserved after the development process, but also the thickness of the intersection region 21 can be reduced, thereby reducing the impact on the overall thickness of the color filter substrate 100. In this embodiment, the retention of a part of the intersection region 21 means that the thickness of the intersection region 21 is reduced from the thickness direction of the color filter substrate 100 during the exposure-development process, and the reduced intersection region 21 still effectively connects two adjacent color resist units 20.

[0033] In step S230, the exposed color resist material layer is subjected to a development process, after which a solidified color resist unit 20 can be obtained, and since the intersection region is also partially solidified during the exposure process, a part of the intersection region 21 can also be effectively retained after the development process.

[0034] 7 is a detailed diagram illustrating a method for manufacturing a color filter substrate 100 according to an embodiment of the present application. Exemplarily, as shown in FIG. 7, the step of providing a color filter layer on the base substrate 10 includes: Step S240: providing a black matrix 30 including a light-shielding region 32 and an opening region 31 on the base substrate 10; Step S250: coating the black matrix 30 with a color resist material layer that forms the crossing area 21 in the light-shielding area 32; Step S260 of exposing the color resist material layer using a photomask 50; and Step S270 of performing a development process on the exposed color resist material layer.

[0035] In step S240, the black matrix 30 can be formed by the process steps of coating, exposing, and developing a black material. The function of the black matrix 30 is to block randomly scattered light from the liquid crystal layer 300, prevent color mixing between sub-pixels, and prevent ambient light from irradiating the channels of the thin film transistor array substrate 200. In manufacturing the color filter substrate 100, generally, the black matrix 30 is manufactured, and then a color filter layer is manufactured on the black matrix 30, so that each color resist unit 20 is located in each opening region 31 of the black matrix 30. Note that in step S250, the color resist material of two adjacent color resist units 20 is both coated on the light-shielding region 32 of the black matrix 30 to form the intersection region 21, and in step S260, the photomask 50 needs to be adjusted accordingly to reserve the intersection region 21. For one adjustment method, the above embodiment of steps 210 to 230 can be referred to.

[0036] In another adjustment manner of the photomask 50, the photomask 50 may be a general photomask 50, that is, it only includes a light-transmitting region and a light-shielding region, the light-transmitting region corresponds to the opening region 31 of the black matrix 30, and in the display panel, the opening region 31 of the black matrix 30 corresponds to the pixel electrode 40 on the array substrate 200 one-to-one, and the projected area of ​​the opening region 31 is the same as the projected area of ​​the pixel electrode 40. Therefore, in the process of exposing using the photomask 50, the area of ​​the light-transmitting region of the photomask 50 can be appropriately increased so that the light-transmitting region of the photomask 50 is larger than the opening region 31 of the black matrix 30. In this way, during the exposure process, some of the light-shielding areas 32 of the black matrix 30 are also exposed, so that the exposed area of ​​the color resist material can be increased, and finally, the projected area of ​​the color resist unit 20 on the array substrate 200 is greater than the projected area of ​​the opening area 31 of the black matrix 30 and the pixel electrode 40, that is, the intersection area 21 of the color resist unit 20 in the light-shielding area 32 of the black matrix 30 is solidified and retained.

[0037] In step 270, a development process is performed on the exposed color resist material layer, and then a solidified color resist unit 20 can be obtained, and since the intersection region is also solidified during the exposure process, the intersection region 21 is also effectively retained after the development process.

[0038] According to an embodiment of the present application, there is further provided a display panel including an array substrate 200, a liquid crystal layer 300, and the above-mentioned color filter substrate 100, the liquid crystal layer 300 being disposed between the array substrate 200 and the color filter substrate 100. The display panel may be any product or component having a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc.

[0039] Exemplarily, the array substrate 200 is provided with pixel electrodes 40 corresponding to the color resist units 20 one-to-one, and the projection area of ​​the color resist units 20 on the array substrate 200 is larger than that of the pixel electrodes 40. In the display panel, the aperture regions 31 of the black matrix 30 correspond one-to-one to the pixel electrodes 40 on the array substrate 200, and the projection area of ​​the aperture regions 31 is the same as that of the pixel electrodes 40. Therefore, in the process of exposure using the photomask 50, the area of ​​the light-transmitting region of the photomask 50 can be appropriately increased so that the light-transmitting region of the photomask 50 is larger than the opening region 31 of the black matrix 30. In this way, during the exposure process, some of the light-shielding areas 32 of the black matrix 30 are also exposed, so that the exposed area of ​​the color resist material can be increased, and finally, the projected area of ​​the color resist unit 20 on the array substrate 200 is greater than the projected area of ​​the opening area 31 of the black matrix 30 and the pixel electrode 40, that is, the intersection area 21 of the color resist unit 20 in the light-shielding area 32 of the black matrix 30 is solidified and retained.

[0040] In the color filter substrate 100 according to the embodiment of the present application, the color resist units 20 are manufactured using a photoresist material and a conductive material, so that the color resist units 20 have conductivity, and an intersection area 21 is further formed for each two adjacent color resist units 20, so that electrical conduction between the color resist units 20 can be formed. In this way, the color filter layer can directly function as an electrode in the color filter substrate 100, and can also form an electric field between the color filter substrate 100 and the array substrate 200 to control the orientation of the liquid crystal in the liquid crystal layer 300. In other words, the manufacturing step of the conductive film layer can be omitted when manufacturing the color filter substrate 100, thereby shortening the manufacturing process cycle of the color filter substrate 100, improving the manufacturing efficiency of the color filter substrate 100, and reducing the manufacturing cost of the color filter substrate.

[0041] In the above embodiments, emphasis is placed on the description of each embodiment, and for parts of an embodiment that are not explained in detail, please refer to the descriptions of related parts of other embodiments.

[0042] In the present description, the terms "first" and "second" are for descriptive purposes only and should not be understood as indicating or suggesting the relative importance or implicitly indicating the number of the indicated technical features, whereby a feature qualified with "first" or "second" may explicitly or implicitly include one or more of said features.

[0043] The color filter substrate according to the embodiment of the present application has been described in detail above. Although the principles and embodiments of the present application have been explained using specific examples in this specification, the explanation of the above examples is merely for the purpose of facilitating understanding of the method and gist of the present application, and those skilled in the art will be able to make modifications to the specific embodiments and the scope of application based on the concept of the present application. Therefore, the contents of this specification should not be understood as limiting the present application.

Claims

1. A base substrate; a color filter layer provided on the base substrate, the color filter layer including a plurality of color resist units distributed on the base substrate, and an intersection area between two adjacent color resist units; a black matrix provided on the base substrate; The manufacturing materials of the color resist unit include a photoresist material and a conductive material; the black matrix is ​​provided in an intersection region between two adjacent color resist units of the same color; two adjacent color resist units of different colors overlap or cross each other in a portion of the crossing region; a color filter substrate, wherein the black matrix is ​​not provided in an intersection region between two adjacent color resist units of different colors;

2. The conductive material comprises at least one of a conductive nanomaterial, a carbon material, or a conductive organic polymer; The color filter substrate according to claim 1 .

3. The conductive material includes a conductive nano-material, and the weight percentage of the conductive nano-material in the color resist unit is 10 wt % to 50 wt %. The color filter substrate according to claim 1 .

4. the conductive material includes a carbon material, and the weight percentage of the carbon material in the color resist unit is 10 wt % to 50 wt %; The color filter substrate according to claim 1 .

5. the conductive material includes a conductive organic polymer, and the weight percentage of the conductive organic polymer in the color resist unit is 20 wt % to 50 wt %; The color filter substrate according to claim 1 .

6. The conductive organic polymer includes at least one of polythiophene, polyacetylene, and polyaniline. The color filter substrate according to claim 5 .

7. the black matrix is ​​composed of a plurality of light-shielding regions, and the width of each of the light-shielding regions gradually decreases from an end close to the base substrate toward an end remote from the base substrate; The color filter substrate according to claim 1 .

8. An array substrate, a liquid crystal layer, and a color filter substrate according to any one of claims 1 to 7, the liquid crystal layer is provided between the array substrate and the color filter substrate; Display panel.

9. The array substrate is provided with pixel electrodes each corresponding to one of the color resist units, and a projected area of ​​the color resist unit on the array substrate is larger than a projected area of ​​the pixel electrode. The display panel according to claim 8.

10. Providing a base substrate; providing a color filter layer on the base substrate, the color filter layer including a plurality of color resist units, an intersection area is formed between two adjacent color resist units, and a manufacturing material of the color resist units includes a photoresist material and a conductive material; providing a black matrix on the base substrate; the black matrix is ​​provided in an intersection region between two adjacent color resist units of the same color; two adjacent color resist units of different colors overlap or cross each other in a portion of the crossing region; The black matrix is ​​not provided in an intersection region between two adjacent color resist units of different colors. A method for manufacturing a color filter substrate.

11. The step of providing a color filter layer on the base substrate includes: Coating the base substrate with a color resist material layer, the color resist material layer including a display area forming a color resist unit and a cross area between two adjacent display areas; exposing the color resist material layer using a gray-tone mask, the gray-tone mask including a transparent region corresponding to the display region and a semi-transparent region corresponding to the intersection region; and performing a development process on the exposed color resist material layer. The method for producing a color filter substrate according to claim 10 .

Images