SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND PROGRAM FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

To provide a technology that can reduce power consumption by a vacuum pump.SOLUTION: A substrate processing apparatus includes: a processing chamber for processing a substrate; a gas flow channel for connecting a plurality of exhaust devices in parallel with the processing chamber; an exhaust control unit for controlling circulation of the gas in the gas flow channel; an output control unit for controlling output of the exhaust devices; and a control unit configured to be capable of controlling the exhaust control unit and the output control unit.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a manufacturing method for a semiconductor device, and a program. [Background technology]

[0002] 2. Description of the Related Art In substrate processing apparatuses such as semiconductor manufacturing apparatuses, a vacuum pump is connected to each processing chamber for processing substrates, and the processing chambers are sometimes evacuated by the vacuum pump (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-64857 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that can reduce power consumption by a vacuum pump. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a processing chamber for processing a substrate; a gas flow path that connects a plurality of exhaust devices to the processing chamber in parallel; an exhaust control unit that controls the flow of gas in the gas flow path; an output control unit for controlling an output of the exhaust device; A control unit configured to be able to control the exhaust control unit and the output control unit; The present invention provides a technique having the following features: Effect of the Invention

[0006] According to the present disclosure, it is possible to reduce the power consumption of the vacuum pump. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 2] 2 is a schematic configuration diagram of a gas supply system and a gas exhaust system of the substrate processing apparatus shown in FIG. [Diagram 3] 4 is a flowchart showing a substrate processing process carried out in the substrate processing apparatus shown in FIG. [Figure 4A] 3 is a diagram showing an example of a connection in which three vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 4B] FIG. 13 is a schematic configuration diagram of a gas exhaust system of a substrate processing apparatus in a comparative example. [Figure 5A] 3 is a diagram showing an example of a connection in which two vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 5B] 5B is a diagram showing the state of the gas exhaust system shown in FIG. 5A when a gas flow path is switched in response to detection of an abnormality in the vacuum pump. FIG. [Figure 5C] 5C is a diagram showing a state of the gas exhaust system when the gas flow path is switched and the output of the vacuum pump is changed in the state of the gas exhaust system shown in FIG. 5B. FIG. [Figure 6A] 3 is a diagram showing an example of a connection in which three vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 6B] 6B is a diagram showing the state of the gas exhaust system when an output of the vacuum pump is changed in response to detection of an abnormality in the vacuum pump in the state of the gas exhaust system shown in FIG. 6A. FIG. [Figure 7A] 3 is a diagram showing an example of a connection in which three vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 7B] 7B is a diagram showing a state of the gas exhaust system when the gas flow path is switched from the state of the gas exhaust system shown in FIG. 7A. FIG. [Figure 8A]3 is a diagram showing an example of a connection in which four vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 8B] 8B is a diagram showing a state of the gas exhaust system when switching of gas flow paths and change in output of a vacuum pump are performed on the gas exhaust system shown in FIG. 8A. FIG. [Figure 9A] 3 is a diagram showing an example of a connection in which three vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 9B] 9B is a diagram showing a state of the gas exhaust system when the gas flow path is switched and the output of the vacuum pump is changed from the state of the gas exhaust system shown in FIG. 9A. FIG. [Figure 10A] 3 is a diagram showing an example of a connection in which four vacuum pumps are connected to four process chambers in the gas exhaust system shown in FIG. 2. FIG. [Figure 10B] 10B is a diagram showing a state of the gas exhaust system when the output of a vacuum pump is changed from the state of the gas exhaust system shown in FIG. 10A. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, one embodiment of the present disclosure will be described mainly with reference to FIGS. 1 to 4A and 5A to 10B. In all drawings, the same or corresponding configurations are denoted by the same or corresponding reference symbols, and duplicated descriptions will be omitted. Note that all drawings used in the following description are schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationship of each element, the ratio of each element, etc. between multiple drawings do not necessarily match. Unless otherwise specified in the specification, each element is not limited to one, and may be present in multiple numbers.

[0009] (1) Configuration of the substrate processing device The substrate processing apparatus 1 in this embodiment is used in the manufacturing process of semiconductor devices, and is configured as a cluster type apparatus having a plurality of single-wafer processing units that process substrates to be processed one by one. Substrates to be processed include, for example, semiconductor wafer substrates (hereinafter simply referred to as "wafers") on which semiconductor devices such as semiconductor integrated circuit devices are fabricated.

[0010] 1, the substrate processing apparatus 1 is provided with a vacuum transfer chamber (transfer chamber) TM that can be made airtight as a transfer chamber, vacuum lock chambers (load lock chambers) VL1, VL2 as spare chambers, and process chambers (process modules) CH1-CH4 as processing chambers for processing wafers W. The vacuum lock chambers VL1, VL2 and the process chambers CH1-CH4 are arranged in a cluster shape along the outer periphery of the vacuum transfer chamber TM. Hereinafter, when there is no need to particularly distinguish between the process chambers CH1-CH4, they will be simply referred to as "process chambers CH."

[0011] The vacuum transfer chamber TM is configured in a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. In one embodiment of the present disclosure, the housing of the vacuum transfer chamber TM is formed in a box shape that is, for example, octagonal in plan view.

[0012] A vacuum transfer robot VR is provided in the vacuum transfer chamber TM as a transfer mechanism. The vacuum transfer robot VR places a wafer W on a substrate placement section provided on an arm, and transfers the wafer W between the vacuum lock chambers VL1, VL2 and the process chamber CH. The vacuum transfer robot VR can ascend and descend by an elevator EV while maintaining the airtightness of the vacuum transfer chamber TM.

[0013] The process chamber CH performs a film forming process on the wafer W to form a thin film such as an oxide film, a nitride film, or a metal film.

[0014] The process chambers CH1 to CH4 are configured to be able to communicate with the vacuum transfer chamber TM via the gate valves G1 to G4, respectively. For example, when processing a wafer W in the process chamber CH1, the atmosphere in the process chamber CH1 is made the same as that in the vacuum transfer chamber TM, the gate valve G1 is opened, the wafer W is transferred into the process chamber CH1, and the gate valve G1 is closed. Then, after a predetermined process is performed in the process chamber CH1, the atmosphere in the process chamber CH1 is returned to the same atmosphere as that in the vacuum transfer chamber TM, the gate valve G1 is opened, the wafer W is removed from the process chamber CH1, and the gate valve G1 is closed. For the process chambers CH2 to CH4, the gate valves G2 to G4 are opened and closed in the same manner as the gate valve G1, so that a processing atmosphere for the wafer W can be formed.

[0015] The vacuum lock chambers VL1, VL2 function as a preliminary chamber for loading the wafer W into the vacuum transfer chamber TM, or as a preliminary chamber for loading the wafer W out of the vacuum transfer chamber TM. Buffer stages ST1, ST2 that temporarily support the wafer W for loading and unloading the substrate are provided inside the vacuum lock chambers VL1, VL2, respectively. Although not shown, the vacuum lock chambers VL1, VL2 are also provided with a cooling function for cooling the wafer W. A cooling chamber may be provided separately from the vacuum lock chambers VL1, VL2.

[0016] The vacuum lock chambers VL1 and VL2 are configured to be able to communicate with the vacuum transfer chamber TM via gate valves G5 and G6, respectively, and are also configured to be able to communicate with the atmospheric transfer chamber LM, which will be described later, via gate valves G7 and G8, respectively. In order to maintain the vacuum state of the vacuum transfer chamber TM and the atmospheric pressure state of the atmospheric transfer chamber LM, one of the gate valves G5 and G7 and one of the gate valves G6 and G8 provided in the vacuum lock chambers VL1 and VL2 are always closed and are never opened at the same time. For example, when the gate valve G5 on the vacuum transfer chamber TM side is opened, the gate valve G7 on the opposite side is always closed to make the atmosphere in the vacuum lock chamber VL1 a vacuum. In this specification, "vacuum" refers to an industrial vacuum. When the gate valve G7 on the atmospheric transfer chamber LM side is opened, the gate valve G5 on the opposite side is always closed to make the atmosphere in the vacuum lock chamber VL1 an atmospheric atmosphere. Therefore, by opening gate valves G7 and G8 while keeping gate valves G5 and G6 closed, it is possible to transfer wafer W between vacuum lock chambers VL1 and VL2 and atmospheric transfer chamber LM while maintaining the vacuum airtightness inside vacuum transfer chamber TM.

[0017] Furthermore, the vacuum lock chambers VL1, VL2 are configured as load lock chambers capable of withstanding a negative pressure less than atmospheric pressure, such as a vacuum state, and each of the interiors can be evacuated to a vacuum. Therefore, by closing the gate valves G7, G8 to evacuate the interiors of the vacuum lock chambers VL1, VL2, and then opening the gate valves G7, G8, it is possible to transfer the wafer W between the vacuum lock chambers VL1, VL2 and the vacuum transfer chamber TM while maintaining the vacuum state inside the vacuum transfer chamber TM.

[0018] The substrate processing apparatus 1 is further provided with an atmospheric transfer chamber LM connected to the vacuum lock chambers VL1, VL2, and load ports LP1-LP3 as substrate accommodation units connected to the atmospheric transfer chamber LM. Pods PD1-PD3 as substrate accommodation containers are placed on the load ports LP1-LP3. A plurality of slots are provided in the pods PD1-PD3 as accommodation units for accommodating wafers W. Hereinafter, unless there is a need to distinguish between the load ports LP1-LP3, they will simply be referred to as "load ports LP." Additionally, unless there is a need to distinguish between the pods PD1-PD3, they will simply be referred to as "pods PD."

[0019] An atmospheric transfer robot AR is provided in the atmospheric transfer chamber LM as an atmospheric transfer mechanism. The atmospheric transfer robot AR transfers wafers W between the vacuum lock chambers VL1, VL2 and the pod PD placed on the load port LP. The atmospheric transfer robot AR also has an arm that is a substrate placement unit, similar to the vacuum transfer robot VR.

[0020] In addition, an orientation flat aligning device OFA is provided in the atmospheric transfer chamber LM as a substrate position correction device, which performs alignment of the crystal orientation of the wafer W. Alternatively, instead of the orientation flat aligning device OFA, a notch aligning device is provided, which performs alignment of the crystal orientation of the wafer W using a notch formed in the wafer W.

[0021] The above-mentioned components are connected to a controller CNT, which is a control unit. The controller CNT has at least a calculation unit 91 and a storage unit 92. An operation unit (input unit) 100 for inputting operations by a user (operator) is connected to the controller CNT. The operation unit 100 has a combination of a display unit such as a display and a keyboard, or a touch screen. The operation unit 100 inputs various instructions from the operator for operating the substrate processing apparatus 1 and outputs them to the controller CNT, and also displays information on the substrate processing apparatus 1 (for example, operation information, abnormality information, etc.) output from the controller CNT. This makes it possible to change the process recipe.

[0022] 2, an exhaust control unit 94, an output control unit 95, a detection unit 96, and an emergency control unit 97. The controller CNT calls up a program or recipe from the storage unit 92 in response to an instruction from an operator inputted from an operation unit 100 or an instruction from a higher-level controller (not shown), and controls the operation of each component in response to the contents of the program or recipe, thereby executing a desired process on the wafer W.

[0023] The controller CNT may be configured as a dedicated computer or as a general-purpose computer. For example, the controller CNT can be configured by preparing an external storage device 93 (for example, a magnetic disk such as a magnetic tape, a flexible disk or a hard disk, an optical disk such as a CD or a DVD, or a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card) in which the above-mentioned program is stored, and installing the program in a general-purpose computer using the external storage device 93.

[0024] Furthermore, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 93. For example, the program may be supplied without going through the external storage device 93 by using a communication means such as the Internet or a dedicated line. The storage unit 92 and the external storage device 93 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. In addition, when the term recording medium is used in this specification, it may include only the storage unit 92 alone, only the external storage device 93 alone, or both.

[0025] Next, a description will be given of a gas supply system and a gas exhaust system of the substrate processing apparatus 1. As shown in Fig. 2, gas supply systems GS1 to GS4 are connected to the process chambers CH1 to CH4, respectively. Hereinafter, when there is no need to particularly distinguish between the gas supply systems GS1 to GS4, they will simply be referred to as "gas supply systems GS."

[0026] The gas supply system GS is composed of a valve (valve body) that turns on / off the supply of the processing gas and a mass flow controller (MFC) that controls the flow rate of the processing gas, and supplies gases required for the processing of the wafer W and the cleaning processing of the process chamber CH to the process chamber CH. A supply source of the processing gas may be included in the gas supply system. Here, the processing of the wafer W is, for example, the above-mentioned film formation processing. The gas supply system GS has, for example, at least a valve and an MFC that control the supply and flow rate of the raw material gas, the reactive gas, and the inert gas. The gas supply system may also have a source of the raw material gas, a source of the reactive gas, and a source of the inert gas. Furthermore, the gas supply system GS has, as a configuration required for the cleaning processing of the process chamber CH, at least a valve and an MFC that control the supply and flow rate of the cleaning gas. The gas supply system may also have a source of the cleaning gas. In this specification, the gases used in the film formation processing or the cleaning processing may be collectively referred to as "processing gas".

[0027] Further, a gas exhaust system GE is connected to the process chambers CH1 to CH4.

[0028] The gas exhaust system GE has exhaust paths 211-214 connected to the process chambers CH1-CH4, respectively, and APC (Auto Pressure Controller) valves 221-224 and valves (valve bodies) 231-234 provided on the exhaust paths 211-214, respectively. The APC valves 221-224 and the valves 231-234 are arranged in order from the upstream side on the exhaust paths 211-214, respectively.

[0029] The gas exhaust system GE further has connection paths 251-253 that connect the exhaust paths 211-214 to each other on the upstream side of the valves 231-234. That is, the exhaust path 211 and the exhaust path 212 are connected by a connection path 251, the exhaust path 212 and the exhaust path 213 are connected by a connection path 252, and the exhaust path 213 and the exhaust path 214 are connected by a connection path 253.

[0030] Specifically, exhaust path 211 and exhaust path 212 are connected by a connection path 251 upstream of valves 231 and 232 and downstream of APC valves 221 and 222. Furthermore, exhaust path 212 and exhaust path 213 are connected by a connection path 252 upstream of valves 232 and 233 and downstream of APC valves 222 and 223. Furthermore, exhaust path 213 and exhaust path 214 are connected by a connection path 253 upstream of valves 233 and 234 and downstream of APC valves 223 and 224.

[0031] Furthermore, valves 261-263 are provided in the connection paths 251-253, respectively. The APC valves 221-224, the valves 231-234, and the valves 261-263 are connected to an exhaust control unit 94. A gas flow path is mainly composed of the exhaust paths 211-214 and the connection paths 251-253. The APC 221-224 and the valves 231-234, 261-263 may be included in the gas flow path.

[0032] The APCs 221-224 each have a valve element whose opening is adjustable, and adjust the conductance of the exhaust paths 211-214 in response to an instruction from the pressure control unit 94a of the exhaust control unit 94, thereby controlling the pressure in the process chambers CH1-CH4 by adjusting the exhaust flow rate.

[0033] Vacuum pumps VP1-VP4 are disposed as exhaust devices on the downstream side of the valves 231-234 in the exhaust paths 211-214. Here, the gas flow path connects a plurality of vacuum pumps (exhaust devices) VP in parallel to the process chamber CH. Sensors SN1-SN4 are attached to the vacuum pumps VP1-VP4, respectively. The vacuum pumps VP1-VP4 may be included in the gas exhaust system GE. Hereinafter, unless it is necessary to distinguish between the vacuum pumps VP1-VP4, they will simply be referred to as "vacuum pumps VP." Unless it is necessary to distinguish between the sensors SN1-SN4, they will simply be referred to as "sensors SN."

[0034] The vacuum pumps VP include a motor that drives the pump, and the rotation speed (number of revolutions) of the motor is controlled by the output control unit 95. All the vacuum pumps VP may have the same maximum exhaust volume, or at least one of the vacuum pumps VP may have a maximum exhaust volume different from the other vacuum pumps. The vacuum pumps VP evacuate the atmosphere in the process chamber CH in response to instructions from the output control unit 95.

[0035] The sensor SN detects an abnormality such as a breakdown of the vacuum pump VP. Here, an abnormality of the vacuum pump VP means, for example, an abnormality that does not immediately affect the exhaust capacity, but may affect the exhaust capacity (affect wafer processing) if the operation is continued. An abnormality of the vacuum pump VP is detected by the rotation speed, power consumption, temperature, pressure of the exhaust paths 211-214 near the vacuum pump VP, or a combination of these. That is, the sensor SN is a sensor that detects these parameters and outputs the detection result to the detection unit 96. Note that the detection unit 96 determines that an abnormality has occurred when, for example, the rotation speed decreases compared to the steady state, the power consumption increases, the temperature increases, or the pressure of the exhaust paths 211-214 increases, and notifies the emergency control unit 97.

[0036] By opening and closing the valves 261-264, it is possible to control the exhaust pipe vacuum pumps VP connected in parallel to the process chambers CH. Furthermore, by opening the valves 231-234 and the valves 261-263, the process chambers CH can be connected to all of the vacuum pumps VP. Furthermore, the number of vacuum pumps VP connected to the process chambers CH can be changed by opening the valves 231-234. Furthermore, the number of process chambers CH connected to the vacuum pumps VP can be changed by opening the valves 221-224. In other words, it is possible to connect multiple vacuum pumps VP to only one process chamber CH.

[0037] The exhaust control unit 94 controls the opening and closing of the valves 231-234 and the valves 261-263 to control the flow of gas in the exhaust paths 211-214 and the connection paths 251-253. The exhaust control unit 94 may also include the valves 231-234 and the valves 261-263. The exhaust control unit 94 includes a pressure control unit 94a, which controls the APC valves 221-224 to control the pressure in the processing chamber 201. The pressure control unit 94a may also include the APC valves 221-224.

[0038] The output control unit 95 controls the output (output rate) of the vacuum pump VP. Here, the output rate is, for example, the value of (operating rotation speed / maximum rotation speed) of the vacuum pump VP, or the value of (operating power consumption / maximum power consumption) of the vacuum pump VP.

[0039] (2) Substrate processing Next, an example of a substrate processing step performed by the substrate processing apparatus 1 according to this embodiment will be described with reference to Fig. 3. The following processing is performed by the controller CNT controlling the operation of each component of the substrate processing apparatus 1.

[0040] (S11: Transfer to atmospheric transport chamber) First, the wafer W is transferred from the pod PD placed on the load port LP to the atmospheric transfer chamber LM by the atmospheric transfer robot AR. At this time, clean air is supplied to the atmospheric transfer chamber LM so that the pressure inside is approximately atmospheric. In the atmospheric transfer chamber LM, the wafer W is placed at the substrate position P2 on the orientation flat alignment device OFA, and alignment of the crystal orientation is performed.

[0041] (S12: Transfer to vacuum lock chamber) Next, the atmospheric transfer robot AR picks up the wafer W placed at the substrate position P2, transfers it into the vacuum lock chamber VL1, and places the wafer W at the substrate position P3 of the buffer stage ST1. At this time, the gate valves G6 and G7 are assumed to be opened in advance. The gate valves G5 and G8 are assumed to be closed, and the vacuum transfer chamber TM, the process chamber CH, and the vacuum lock chamber VL2 are assumed to have been evacuated in advance.

[0042] (S13: Transfer to process chamber) Next, gate valve G7 is closed and the inside of vacuum lock chamber VL1 is evacuated to a vacuum. When the pressure inside vacuum lock chamber VL1 is reduced to a predetermined level, gate valve G5 is opened while gate valve G7 is still closed. Then, the wafer W placed at substrate position P3 is picked up by the vacuum transfer robot VR, transferred to process chamber CH, and placed at one of substrate positions P4 to P7 therein.

[0043] (S14: Film formation process) When the wafer W is loaded into the process chamber CH, a process gas is supplied into the process chamber CH, and a film forming process is performed on the wafer W. Here, for example, titanium nitride (TiN) is formed as a metal thin film (nitride film, metal nitride film). Here, a method for forming a TiN film will be generally described.

[0044] The film formation process of TiN is performed, for example, by sequentially executing the following four steps. First, a titanium (Ti)-containing gas is supplied as a metal raw material. The flow rate of the Ti-containing gas is set to, for example, within a range of 0.1 to 1000 sccm by controlling a mass flow controller. The pressure in the process chamber CH is set to, for example, within a range of 10 to 1500 Pa by a vacuum pump VP described later. The supply time of the Ti-containing gas is set to, for example, within a range of 0.01 to 300 seconds. The temperature (processing temperature) of the wafer W is adjusted to, for example, within a range of 350 to 400° C. by controlling a temperature regulator. A Ti-containing layer is formed on the wafer W by supplying the Ti-containing gas. In this specification, a numerical range such as “10 to 1500 Pa” means that the lower limit and the upper limit are included in the range. Thus, for example, “10 to 1500 Pa” means “10 Pa or more and 1500 Pa or less”. The same applies to other numerical ranges.

[0045] Next, the supply of the Ti-containing gas into the process chamber CH is stopped, and the process chamber CH is evacuated by the vacuum pump VP to remove the Ti-containing gas remaining in the process chamber CH that has not reacted or that has contributed to the formation of the Ti-containing layer. At this time, an inert gas may be supplied to enhance the effect of removing the Ti-containing gas. As the inert gas, a rare gas such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, or xenon (Xe) gas, or nitrogen (N2) gas can be used. This also applies to each step described later.

[0046] Next, nitrogen (N)-containing gas (nitriding source, nitriding agent) is supplied as a reactive gas into the process chamber CH. The flow rate of the N-containing gas is set to, for example, within a range of 10 to 3000 sccm by controlling a mass flow controller. The pressure in the process chamber CH is set to, for example, within a range of 10 to 1500 Pa by an exhaust pump. The supply time of the N-containing gas is set to, for example, within a range of 0.01 to 300 seconds. The temperature (processing temperature) of the wafer W is adjusted to, for example, within a range of 350 to 400° C. by controlling a temperature regulator. This N-containing gas reacts with at least a part of the Ti-containing layer described above. As a result, the Ti-containing layer is nitrided to form TiN.

[0047] Next, the supply of the N-containing gas into the process chamber CH is stopped, and the process chamber CH is evacuated by the vacuum pump VP to remove the N-containing gas remaining in the process chamber CH that has not reacted or that has contributed to the nitridation of the Ti-containing layer. At this time, an inert gas may be supplied to enhance the effect of removing the N-containing gas.

[0048] The above four steps are repeated a predetermined number of times to form, for example, a TiN thin film having a desired thickness, thereby completing the film formation process.

[0049] (S15: Transfer to vacuum lock chamber) When the film formation process on the wafer W is completed, gate valve G6 is opened, and the vacuum transfer robot VR picks up the processed wafer W placed at one of the substrate positions P4 to P7, transports it into the vacuum lock chamber VL2, and places the wafer W at substrate position P10 on the buffer stage ST2.

[0050] (S16: Store in pod) Next, gate valve G6 is closed, and clean gas is supplied into vacuum lock chamber VL2 to return the interior of vacuum lock chamber VL2 to approximately atmospheric pressure. At this time, the wafer W may be cooled by a cooling mechanism (not shown). Then, gate valve G8 is opened, and the wafer W placed at substrate position P10 is picked up by the atmospheric transfer robot AR and stored in an empty slot of pod PD placed on load port LP.

[0051] (S17: Check number of times performed) Next, it is determined whether or not a predetermined number of film forming processes have been performed in the same process chamber CH.

[0052] (S18: Cleaning process) If the film formation process has been performed the predetermined number of times, a cleaning process is performed for the process chamber CH to remove any films or by-products adhering to the inside of the process chamber CH. Then, the process from S11 onward is continued. On the other hand, if the film formation process has not been performed the predetermined number of times, the cleaning process is skipped and the process from S11 onward is continued.

[0053] Here, examples of the Ti-containing gas include titanium tetrachloride (TiCl4) gas, titanium tetrafluoride (TiF4) gas, etc. Examples of the N-containing gas include nitrogen (N2) gas, nitrous oxide (N2O) gas, diazene (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, and other gases that contain NH bonds.

[0054] (3) Gas exhaust system control Some examples (connection examples) of switching the gas flow path (exhaust path) of the gas exhaust system GE and changing the maximum exhaust volume and output of the vacuum pump VP will be described with reference to FIGS. 4A and 4B.

[0055] As an example of a connection configuration of the vacuum pumps VP to the process chambers CH, a configuration in which one vacuum pump VP is connected to one process chamber CH as shown in FIG. 4B is shown as a comparative example with the configuration of the present disclosure.

[0056] 4B, process chamber CH1 communicates with vacuum pump VP1 through exhaust path 211 via APC valve 221 and valve 231. Process chamber CH2 communicates with vacuum pump VP2 through exhaust path 212 via APC valve 222 and valve 232. Process chamber CH3 communicates with vacuum pump VP3 through exhaust path 213 via APC valve 223 and valve 233. Process chamber CH4 communicates with vacuum pump VP4 through exhaust path 214 via APC valve 224 and valve 234.

[0057] If the output (rotation speed) of the vacuum pump VP is reduced during the film formation process, by-products and the like may be deposited on the vacuum pump VP. For this reason, if the vacuum pump VP is operated with the output reduced, the frequency of maintenance of the vacuum pump VP increases. In the comparative example, even when a process that does not require a large amount of exhaust is performed in the process chamber CH, the large-capacity vacuum pump VP is operated at high output, and excess exhaust from the process chamber CH is restricted by adjusting the opening of the exhaust path with the APC valves 221-224. That is, in the comparative example, power is consumed excessively by the vacuum pump VP.

[0058] The connection example of the gas exhaust system shown in FIG. 4A is an example in which four process chambers are exhausted by three vacuum pumps. The exhaust control unit 94 closes the valve 231 and opens the valves 232 to 234. As a result, the process chambers CH1 to CH4 are connected to the vacuum pumps VP2 to VP4. Here, the maximum exhaust volumes of the vacuum pumps VP1 to VP4 are all the same (relative value=100). The output control unit 95 reduces the rotation speed of the vacuum pump VP1 that is not connected to the process chamber CH, and sets the output rate to, for example, 20% to perform idling operation. By operating the vacuum pump VP1 in idling operation, the output rate can be increased in a shorter time than when the output rate of the vacuum pump VP1 is set to 0% (completely stopped). The output control unit 95 sets the output rate of the vacuum pumps VP2 to VP4 that are connected to the process chamber CH to, for example, 100%, to operate them at maximum output.

[0059] In this example, the process chamber CH is evacuated at a smaller rate than in the comparative example, but the output rate of the vacuum pumps VP2 to VP4 is 100%, so deposition in the vacuum pumps VP is not promoted. Therefore, it is possible to reduce the power consumption of the vacuum pumps VP without increasing the frequency of maintenance of the vacuum pumps.

[0060] [Control when vacuum pump is abnormal] When an abnormality occurs in the vacuum pump, substrate processing can be continued by controlling at least one of switching the gas flow path and changing the output of the vacuum pump. An example of this control will be described with reference to Figures 5A, 5B, 5C, 6A, and 6B.

[0061] In addition, the control when the vacuum pump is abnormal may involve both gas flow path control and vacuum pump output control, or the gas flow path control and the vacuum pump output control may be performed in separate steps. Several control examples will be described below.

[0062] An example of control when the detector 96 detects an abnormality in the vacuum pump VP3 in the state of the gas exhaust system shown in FIG. 5A will be described.

[0063] The emergency control unit 97 controls the exhaust control unit 94 so that the gas exhaust system changes from the state shown in FIG. 5A to the state shown in FIG. 5B in which the valve 234 is opened to connect the flow path to the vacuum pump VP4 while maintaining the output of the vacuum pump VP3.

[0064] Thereafter, if the detection unit 96 detects a further abnormality in the vacuum pump VP3, the emergency control unit 97 may control the exhaust control unit and the output control unit so that the exhaust system is in the state shown in Fig. 5C. Specifically, the exhaust control unit 94 may be controlled to close the valve 233 to block the flow path to the vacuum pump VP3, and the output control unit 95 may be controlled to increase the output rate of the vacuum pump VP4 from 20% to 80% and to decrease the output rate of the vacuum pump VP3 from 80% to 20%, or to stop the operation.

[0065] In the example, when the detector 96 detects an abnormality in the vacuum pump VP3, the state of the exhaust system is changed from Fig. 5A to Fig. 5B, and then from Fig. 5B to Fig. 5C, but the invention is not limited to this. The state of the exhaust system may be changed from Fig. 5A to Fig. 5C.

[0066] This control makes it possible to continue operating the vacuum pump VP3 and observe changes in the state while preparing for further abnormalities in the vacuum pump VP3. It also makes it possible to wait for the progress of the process in the process chamber CH before controlling the exhaust system.

[0067] Next, a control example will be described in the case where the detector 96 detects an abnormality in the vacuum pump VP3 in the state of the gas exhaust system shown in FIG. 6A.

[0068] The emergency control unit 97 controls the output control unit 95 to change the state of the gas exhaust system shown in Fig. 6A to that shown in Fig. 6B, thereby decreasing the output rate of the vacuum pump VP3 from 80% to 20% while increasing the output rate of the vacuum pump VP2 from 80% to 100%. This control makes it possible to lower the output of the vacuum pump in which an abnormality has been detected without changing the exhaust volume of the process chamber CH while preparing for further abnormalities in the vacuum pump VP3. It also becomes possible to wait for the progress of the process being performed in the process chamber CH before controlling the exhaust system.

[0069] [Control based on processing content in the process chamber] An example of control of at least one of switching of gas flow paths and changing of pump output depending on the processing content performed in process chamber CH will be described with reference to Figures 7A, 7B, 8A, 8B, 9A, 9B, 10A and 10B.

[0070] The controller CNT may control at least one of the exhaust control unit 94 or the output control unit 95 between a first process performed in the process chamber CH and a second process performed in the same process chamber CH after the first process.

[0071] The controller CNT may control the exhaust control unit 94 and the output control unit 95 between the first process and the second process so that at least a part of the vacuum pump VP that evacuates the process chamber CH is evacuated by another vacuum pump VP. In other words, the process chamber CH may be evacuated in the second process by a vacuum pump different from the vacuum pump used in the first process.

[0072] For example, the exhaust control unit 94 may be controlled between the first process and the second process to change the operating state of the vacuum pumps VP1 and VP2 in the exhaust system shown in Fig. 7A to the operating state of the vacuum pumps VP1 and VP2 in the exhaust system shown in Fig. 7B. In this case, even if some of the vacuum pumps VP are not evacuating the process chambers CH, it is possible to continue evacuation of all the process chambers CH. Therefore, the frequency of maintenance of the vacuum pumps VP can be reduced without reducing productivity.

[0073] The controller CNT may control the exhaust control unit 94 and the output control unit 95 between the first process and the second process so that the gas flow rate per unit time exhausted from the process chamber CH in the first process and the second process is different.

[0074] For example, the state of the exhaust system in FIG. 8A may be changed to the state shown in FIG. 8B by controlling the exhaust control unit 94 and the output control unit 95 to change the gas flow rate. That is, the gas flow rate may be changed by changing the number of vacuum pumps VP performing exhaust. In this case, in FIG. 8B, the process chamber CH is exhausted with a smaller exhaust rate than in FIG. 8A, but since the output rate of the vacuum pumps VP2 to VP4 is 80%, deposition in the vacuum pumps VP is not easily promoted. Therefore, it is possible to reduce the power consumption by the vacuum pumps VP without increasing the maintenance frequency of the vacuum pumps.

[0075] Also, for example, the state of the exhaust system in FIG. 9A may be changed to the state shown in FIG. 9B by controlling the opening and closing of the valves 231, 234 and the output rates of the vacuum pumps VP1, VP4 by the exhaust control unit 94 and the output control unit 95, thereby changing the gas flow rate. That is, the gas flow rate may be changed by connecting a vacuum pump VP having a different maximum exhaust volume to the process chamber CH. In this case, in FIG. 9B, the process chamber CH is exhausted with a smaller exhaust volume than in FIG. 9A, but since the output rates of the vacuum pumps VP2 to VP4 are 100%, deposition in the vacuum pump VP is not easily promoted. Therefore, it is possible to reduce the power consumption by the vacuum pump VP without increasing the maintenance frequency of the vacuum pump.

[0076] Also, for example, the state of the exhaust system in FIG. 10A may be changed to the state shown in FIG. 10B by controlling the output rate of the vacuum pumps VP1 to VP4 by the output control unit 95, thereby changing the gas flow rate. That is, the gas flow rate may be changed according to the output rate of the vacuum pump VP performing the exhaust. In this case, in FIG. 10B, the process chamber CH is exhausted with a smaller exhaust rate than in FIG. 10A, but since the output rate of the vacuum pumps VP1 to VP4 is 90%, deposition in the vacuum pumps VP is not easily promoted. Therefore, it is possible to reduce the power consumption of the vacuum pumps VP without increasing the frequency of maintenance of the vacuum pumps.

[0077] Here, the first process may be a first substrate process, and the second process may be a second substrate process. The first substrate process and the second substrate process may be, for example, a film forming process and an annealing process. Alternatively, the first substrate process and the second substrate process may be processes for forming the same type of film, but with different aspect ratios of recesses provided in the substrate.

[0078] Also, one of the first process and the second process may be a substrate process, and the other may be a cleaning process of the process chamber CH. During the cleaning process of the process chamber CH, the amount of exhaust required is smaller than during the substrate process, so that it is possible to minimize the amount of power consumption by selecting the vacuum pump VP or changing the output.

[0079] In addition, either the first process or the second process may be a substrate processing, and the other may be in a standby state. When there is no substrate in the process chamber CH, the amount of exhaust required is less than when a substrate is being processed, and deposition is less likely to occur, so that it is possible to minimize power consumption by selecting the vacuum pump VP or changing its output.

[0080] Furthermore, the first process and the second process may be the same process.

[0081] Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit of the present disclosure. The above embodiments and modifications can be used in appropriate combination. The processing procedures and processing conditions in this case can be, for example, the same as the processing procedures and processing conditions of the above embodiments and modifications.

[0082] In the above-mentioned embodiment, the substrate processing step is mainly exemplified as a case where a thin film is formed on the surface of a substrate, but the present disclosure is not limited thereto. That is, the present disclosure can be applied to a film formation process other than the thin film exemplified in the above-mentioned embodiment, in addition to the thin film formation exemplified in the above-mentioned embodiment. In addition, the specific content of the substrate processing is not important, and the present disclosure can be applied to other substrate processing such as a heat treatment (annealing process), a plasma processing, a diffusion process, an oxidation process, a nitriding process, a lithography process, and a reflow process for carrier activation or planarization after ion implantation, in addition to the film formation process.

[0083] In the above-mentioned embodiment, an example of forming a film using a single-wafer type substrate processing apparatus that processes one substrate at a time has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to, for example, a case where a film is formed using a single-wafer type substrate processing apparatus that processes several substrates at a time, or a case where a film is formed using a batch type substrate processing apparatus that processes multiple substrates at a time. In the above-mentioned embodiment, an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a hot-wall type processing furnace.

[0084] When using these substrate processing apparatuses, each process can be performed under the same process procedures and conditions as in the above embodiment, and the same effects as in the above embodiment can be obtained. [Explanation of symbols]

[0085] 1. Substrate processing equipment 94 Exhaust control section 95 Output control section CH, CH1 to CH4...Process chamber (processing room) 211-214, 251-253... Gas flow path CNT···Controller (control unit)

Claims

1. A method for manufacturing a substrate, comprising: a gas flow path that connects a plurality of exhaust devices to the plurality of processing chambers in parallel; an exhaust control unit that controls the flow of gas in the gas flow path; an output control unit for controlling an output of the exhaust device; evacuating the process chambers by more than one of the exhaust devices; A control unit configured to be able to control the exhaust control unit and the output control unit so that A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein the exhaust control unit further comprises a pressure control unit that controls a pressure in the processing chamber to a predetermined pressure by adjusting an opening of the gas flow path.

3. The substrate processing apparatus according to claim 1 , wherein at least one of the exhaust devices has a maximum exhaust volume different from the other exhaust devices.

4. A detection unit that detects an abnormality in the exhaust device; an emergency control unit configured to control at least one of the exhaust control unit and the output control unit when the detection unit detects an abnormality in the exhaust device; The substrate processing apparatus of claim 1 , further comprising:

5. The substrate processing apparatus of any one of claims 1 to 4, wherein the control unit is configured to be capable of controlling at least one of the exhaust control unit or the output control unit between a first process performed in the processing chamber and a second process performed in the processing chamber after the first process.

6. 6. The substrate processing apparatus of claim 5, wherein the control unit is configured to be capable of controlling at least one of the exhaust control unit or the output control unit so that the processing chamber in the second process is evacuated by the exhaust unit different from the exhaust unit used in the first process.

7. 6. The substrate processing apparatus of claim 5, wherein the control unit is configured to be capable of controlling at least one of the exhaust control unit or the output control unit so that a gas flow rate per unit time exhausted from the processing chamber in the first process and the second process is different.

8. 8. The substrate processing apparatus of claim 7, wherein the control unit is configured to be capable of controlling at least one of the exhaust control unit or the output control unit so that a number of the exhaust devices connected to the processing chamber differs between the first process and the second process.

9. 8. The substrate processing apparatus of claim 7, wherein the control unit is configured to be capable of controlling at least one of the exhaust control unit or the output control unit so that a maximum exhaust volume of at least one of the exhaust devices connected to the processing chamber is different between the first process and the second process.

10. 8. The substrate processing apparatus of claim 7, wherein the control unit controls at least one of the exhaust control unit or the output control unit so that an output rate, which is an output value relative to a maximum output in at least one of the exhaust devices connected to the processing chamber, is different between the first process and the second process.

11. The substrate processing apparatus of claim 5 , wherein the first process is a first substrate process, and the second process is a second substrate process.

12. 6. The substrate processing apparatus according to claim 5, wherein one of the first process and the second process is a substrate processing, and the other is a cleaning process for the processing chamber.

13. The substrate processing apparatus according to claim 5 , wherein one of the first process and the second process is a substrate process, and the other is in a standby state.

14. (a) forming a film on a substrate in a plurality of processing chambers; (b) controlling at least one of gas flow in a gas flow path connecting a plurality of exhaust devices in parallel to the processing chamber and outputs of the plurality of exhaust devices, thereby evacuating the plurality of processing chambers by one or more of the plurality of exhaust devices while (a) is being performed; A substrate processing method comprising the steps of:

15. The method of claim 1, further comprising the steps of: (a) forming a film on a substrate in a plurality of processing chambers; (b) controlling at least one of gas flow in a gas flow path connecting a plurality of exhaust devices in parallel to the processing chamber and outputs of the plurality of exhaust devices, thereby evacuating the plurality of processing chambers by one or more of the plurality of exhaust devices while (a) is being performed; A method for manufacturing a semiconductor device having the above structure. (a) forming a film on a substrate in a plurality of processing chambers; (b) controlling at least one of gas flow in a gas flow path connecting a plurality of exhaust devices in parallel to the processing chamber and outputs of the plurality of exhaust devices, thereby evacuating the plurality of processing chambers by one or more of the plurality of exhaust devices while (a) is being performed; A program for causing a computer to execute the procedure including the steps of:

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