High boron content hardmask materials

Abstract

An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber. The method may further include depositing a boron-containing material on a substrate disposed in the processing region of the semiconductor processing chamber. The boron-containing material may contain more than 50% boron. In some embodiments, the boron-containing material may contain substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and / or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber. The boron-containing material may further contain at least one of germanium, oxygen, silicon, phosphorus, carbon, and / or nitrogen.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. patent application Ser. No. 16 / 703,248, filed Dec. 4, 2019, the contents of which are incorporated by reference in their entirety for all purposes.

[0002] Technical Field

[0002] The present technology relates to semiconductor processing and materials, and more particularly to high boron content hardmask materials and processes including same. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on a substrate surface. The production of patterned materials on a substrate requires controlled methods of formation and removal of exposed material. Thus, there is a need for materials and processes that can be used to facilitate the formation and removal of exposed material to produce patterned features and structures. These and other needs are addressed by current technology. Summary of the Invention

[0004]

[0004] Embodiments of the present technology may include a method for forming a hard mask. In some embodiments, an exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber. The method may further include depositing a boron-containing material on a substrate disposed in the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% boron.

[0005] In some embodiments, the boron-containing material may comprise substantially all boron. In some embodiments, the boron-containing material may comprise only boron and hydrogen. In some embodiments, the boron-containing material may be free of silicon.

[0006] In some embodiments, the method may further include delivering a germanium-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma in the processing region of the semiconductor processing chamber from the germanium-containing precursor. The boron-containing material may further include less than 20% germanium.

[0007] In some embodiments, the method may further include delivering an oxygen-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma from the oxygen-containing precursor in the processing region of the semiconductor processing chamber. The boron-containing material may further include less than 20% oxygen. In some embodiments, the boron-containing material may be characterized by an extinction coefficient of less than 0.3.

[0008] In some embodiments, the method may further include delivering a silicon-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma from the silicon-containing precursor in the processing region of the semiconductor processing chamber. The boron-containing material may further include less than 5% silicon.

[0009] In some embodiments, the method may further include delivering a carbon-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma in the processing region of the semiconductor processing chamber from the carbon-containing precursor. The boron-containing material may further include less than 10% carbon.

[0010] In some embodiments, the method can further include delivering a nitrogen-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber can further include forming a plasma in the processing region of the semiconductor processing chamber from the nitrogen-containing precursor. The boron-containing material can further include less than 10% nitrogen.

[0011] In some embodiments, the method may further include delivering a phosphorus-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma in the processing region of the semiconductor processing chamber from the phosphorus-containing precursor. The boron-containing material may further include less than 10% phosphorus.

[0012] In some embodiments, the boron-containing precursor may be the first precursor. The method may further include delivering a second precursor to the processing region of the semiconductor processing chamber. The second precursor may include at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a carbon-containing precursor, a nitrogen-containing precursor, or a phosphorus-containing precursor. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma from the second precursor in the processing region of the semiconductor processing chamber. The boron-containing material may further include less than 20% or less than 10% germanium, oxygen, silicon, carbon, nitrogen, or phosphorus.

[0013] In some embodiments, the boron-containing material may have an etch selectivity of greater than 1.5:1 relative to amorphous silicon. In some embodiments, the boron-containing material may have an etch selectivity of greater than 1.5:1 relative to a silicon-doped boron hardmask material that includes about 30% silicon and about 65% boron. In some embodiments, the boron-containing material may be deposited at a deposition rate of about 5,000 Å / min or greater. In some embodiments, the temperature in the processing region of the semiconductor processing chamber may be maintained between about 400° C. and about 550° C.

[0014]

[0014] In some embodiments, the method may further include delivering a precursor comprising nitrogen and hydrogen to a processing region of the semiconductor processing chamber. In some embodiments, the method may also include forming a plasma from the precursor comprising nitrogen and hydrogen. The method may further include treating a boron-containing material with the plasma formed from the precursor comprising nitrogen and hydrogen. In some embodiments, the method may further include heating the boron-containing material to a temperature in a range between about 500°C and about 650°C for a period of time between about 1 second and about 60 minutes.

[0015] In some embodiments, another exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber. The method may further include depositing a boron-containing material on a substrate disposed in the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% boron. The boron-containing material may be configured to be etched to form high aspect ratio features.

[0016] In some embodiments, the method may further include delivering a germanium-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma in the processing region of the semiconductor processing chamber from the germanium-containing precursor. The boron-containing material may further include less than 20% germanium.

[0017] In some embodiments, the method may further include delivering an oxygen-containing precursor to the processing region of the semiconductor processing chamber. Forming a plasma in the processing region of the semiconductor processing chamber may further include forming a plasma in the processing region of the semiconductor processing chamber from the oxygen-containing precursor. The boron-containing material may further include less than 20% oxygen.

[0018]

[0018] The present technique may provide many advantages over conventional systems and techniques. For example, the present technique may provide improved etch selectivity and reduced extinction coefficients, providing hardmask materials that may facilitate lithography and etching processes. Additionally, the present technique may improve the mechanical properties of the formed hardmask while allowing for high deposition rates. Thus, the present technique may not only improve the properties of the deposited hardmask, but may also improve manufacturing efficiency. These and other embodiments, along with many of their advantages and features, may be described in more detail in conjunction with the following description and accompanying figures.

[0019] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and drawings. [Brief description of the drawings]

[0020] [Figure 1] 1 shows a schematic cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique. [Diagram 2]

[0021] 1 illustrates exemplary operations in a semiconductor substrate processing method according to some embodiments of the present technique. [Figure 3A-3D]

[0022] 3A-3D generally illustrate exemplary semiconductor structures that may be processed using the operations illustrated in FIG. 2, according to some embodiments of the present technique. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021]

[0023] Some of the figures are included as schematic diagrams. It is understood that these figures are for illustrative purposes and should not be considered to be to scale unless specifically stated to be to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0022]

[0024] In the accompanying figures, similar components or features may have the same reference label. Additionally, various components of the same type may be distinguished by tracing the reference numbers with a letter that distinguishes the similar components. When only a first reference number is used in this specification, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0023]

[0025] During semiconductor processing, various deposition and etching operations can be utilized to fabricate structures on a substrate. Mask materials, including hardmask materials, can be used to selectively etch materials to create features across a substrate. For example, thermally generated amorphous silicon hardmasks have been utilized to facilitate semiconductor fabrication. However, due to the relatively low etch selectivity offered by thermally generated amorphous silicon, thermally generated amorphous silicon hardmasks can be relatively thick. As feature sizes in semiconductor devices continue to decrease, increasing film thicknesses, such as the thickness of hardmasks formed with amorphous silicon, can lead to other processing challenges. For example, increasing hardmask film thicknesses can require high aspect ratio etch features, which can lead to non-uniform top-to-bottom etching. Additionally, increasing hardmask film thicknesses can reduce the transparency of the hardmask, which can be characterized by a relatively high extinction coefficient. Hardmasks with relatively high extinction coefficients can lead to challenges in alignment between structures created by different patterning, etching, and / or deposition processes.

[0024]

[0026] The present technology solves these and other problems by providing a variety of high boron content materials that may improve etch selectivity, reduce extinction coefficient, increase deposition rate, and / or provide other benefits by incorporating a high content of boron into the hardmask. The present technology can further improve various properties of the hardmask by doping the high boron content hardmask material with various elements to facilitate the use of the hardmask material in various applications, including one cylinder storage (OCS) etching for DRAM fabrication, where deep and narrow etches can be performed through the hardmask. After describing general aspects of a chamber according to an embodiment of the present technology in which the plasma processing operations discussed below may be performed, specific methodologies and component configurations may be discussed. It should be understood that the described technology may be used to improve many film formation processes, and therefore the present technology is not intended to be limited to the specific films and techniques discussed, but may be applicable to a variety of processing chambers and operations.

[0025]

[0027] FIG. 1 illustrates a cross-sectional view of an exemplary processing chamber 100 according to some embodiments of the present technique. The diagram may provide an overview of a system incorporating one or more aspects of the present technique and / or may provide an overview of a system capable of performing one or more operations according to embodiments of the present technique. Additional details of the chamber 100 or the method performed may be further described below. Although the chamber 100 may be utilized to form a film layer according to some embodiments of the present technique, it should be understood that the method may similarly be performed in any chamber in which film formation may occur. The processing chamber 100 may include a chamber body 102, a substrate support 104 disposed within the chamber body 102, and a lid assembly 106 coupled with the chamber body 102 and enclosing the substrate support 104 within a processing region 120. The substrate 103 may be provided to the processing region 120 through an opening 126, which may be conventionally sealed for processing using a slit valve or door. The substrate 103 may be seated on a surface 105 of the substrate support during processing. The substrate support 104 may be rotatable along an axis 147 about which the shaft 144 of the substrate support 104 may be disposed, as indicated by arrow 145. Alternatively, the substrate support 104 may be elevated and rotated as needed during the deposition process.

[0026]

[0028] The plasma profile modulator 111 can be disposed in the process chamber 100 to control the plasma distribution across the substrate 103 disposed on the substrate support 104. The plasma profile modulator 111 can include a first electrode 108 that can be disposed adjacent to the chamber body 102 and can separate the chamber body 102 from other components of the lid assembly 106. The first electrode 108 can be part of the lid assembly 106 or can be a separate sidewall electrode. The first electrode 108 can be an annular or ring-shaped member and can be a ring electrode. The first electrode 108 can be a continuous loop around the circumference of the process chamber 100 surrounding the process volume 120 or can be discontinuous at selected locations as needed. The first electrode 108 can also be a perforated electrode, such as a perforated ring or mesh electrode, or can be a plate electrode, such as a secondary gas distributor, for example.

[0027] One or more isolators 110a, 110b, which may be a dielectric material such as a ceramic or metal oxide, e.g., aluminum oxide and / or aluminum nitride, may contact the first electrode 108 and electrically and thermally isolate the first electrode 108 from the gas distributor 112 and the chamber body 102. The gas distributor 112 may define an opening 118 for distributing the process precursors to the processing region 120. The gas distributor 112 may be coupled to a first power source 142, such as an RF generator, an RF power source, a DC power source, a pulsed DC power source, a pulsed RF power source, or any other power source that may be coupled to a processing chamber. In some embodiments, the RF generator may include a capacitively coupled plasma source. In some embodiments, the RF generator may include an inductively coupled plasma source. In some embodiments, the first power source 142 may be an RF power source.

[0028]

[0030] The gas distributor 112 can be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 112 can also be formed from conductive and non-conductive components. For example, the body of the gas distributor 112 can be conductive, while the faceplate of the gas distributor 112 can be non-conductive. The gas distributor 112 can be powered, for example, by a first power source 142 as shown in FIG. 1, or the gas distributor 112 can be coupled to ground in some embodiments.

[0029]

[0031] The first electrode 108 can be coupled to a first conditioning circuit 128 that can control the ground path of the processing chamber 100. The first conditioning circuit 128 can include a first electronic sensor 130 and a first electronic controller 134. The first conditioning circuit 128 can include a first electronic sensor 130 and a first electronic controller 134. The first conditioning circuit 128 can be or can include one or more inductors 132. The first conditioning circuit 128 can be any circuit that allows for a variable or controllable impedance under the plasma conditions present in the processing region 120 during processing. In some illustrated embodiments, the first conditioning circuit 128 can include a first circuit leg and a second circuit leg coupled in parallel between ground and the first electronic sensor 130. The first circuit leg can include a first inductor 132A. The second circuit leg can include a second inductor 132B coupled in series with the first electronic controller 134. The second inductor 132B can be disposed between the first electronic controller 134 and a node connecting both the first and second circuit legs to the first electronic sensor 130. The first electronic sensor 130 can be a voltage or current sensor and can be coupled to the first electronic controller 134, which can provide some closed loop control of the plasma conditions in the processing region 120.

[0030]

[0032] The second electrode 122 may be coupled to the substrate support 104. The second electrode 122 may be embedded in the substrate support 104 or coupled to a surface of the substrate support 104. The second electrode 122 may be a plate, a perforated plate, a mesh, a wire screen, or any other distributed arrangement of conductive elements. The second electrode 122 may be a conditioning electrode and may be coupled to a second conditioning circuit 136 by a conduit 146, e.g., a cable having a selected resistance, e.g., 50 ohms, disposed on the shaft 144 of the substrate support 104. The second conditioning circuit 136 may include a second electronic sensor 138 and a second electronic controller 140, which may be a second variable capacitor. The second electronic sensor 138 may be a voltage or current sensor and may be coupled to the second electronic controller 140 to further control the plasma conditions in the processing region 120.

[0031]

[0033] A third electrode 124, which may be a bias electrode and / or an electrostatic chucking electrode, may be coupled to the substrate support 104. The third electrode may be coupled to a second power source 150 through a filter 148, which may be an impedance matching circuit. The second power source 150 may be DC power, pulsed DC power, RF bias power, pulsed RF source or bias power, or a combination of these or other power sources. In some embodiments, the second power source 150 may be RF bias power.

[0032]

[0034] The lid assembly 106 and substrate support 104 of FIG. 1 can be used with any processing chamber for plasma or thermal processing. During operation, the processing chamber 100 can provide real-time control of plasma conditions within the processing region 120. The substrate 103 can be placed on the substrate support 104, and process gases can flow through the lid assembly 106 using the inlet 114 according to any desired flow plan. The gases can exit the processing chamber 100 through the outlet 152. Power can be coupled with the gas distributor 112 to establish a plasma within the processing volume 120. In some embodiments, the substrate can be subjected to an electrical bias using the third electrode 124.

[0033]

[0035] Upon energizing the plasma in the processing region 120, a potential difference can be established between the plasma and the first electrode 108. A potential difference can also be established between the plasma and the second electrode 122. Electronic controllers 134, 140 can then be used to adjust the flow characteristics of the ground path represented by the two adjustment circuits 128 and 136. Set points can be provided to the first adjustment circuit 128 and the second adjustment circuit 136 to provide independent control of the deposition rate and center-to-edge plasma density uniformity. In an embodiment where the electronic controllers can both be variable capacitors, the electronic sensor can adjust the variable capacitor to maximize the deposition rate and independently minimize the thickness non-uniformity.

[0034]

[0036] Each of the conditioning circuits 128, 136 may have a variable impedance that can be adjusted using the respective electronic controller 134, 140. If the electronic controller 134, 140 is a variable capacitor, the capacitance range of each variable capacitor and the inductance of the first inductor 132A and the second inductor 132B may be selected to provide an impedance range. This range may depend on the frequency and voltage characteristics of the plasma, and the capacitance range of each variable capacitor may be minimum. Thus, when the capacitance of the first electronic controller 134 is minimum or maximum, the impedance of the first conditioning circuit 128 may be high, resulting in a plasma shape with minimum aerial or lateral reach on the substrate support. When the capacitance of the first electronic controller 344 approaches a value that minimizes the impedance of the first conditioning circuit 128, the aerial coverage of the plasma may be maximized and effectively cover the entire working area of ​​the substrate support 104. As the capacitance of the first electronic controller 134 deviates from the minimum impedance setting, the plasma shape may shrink from the chamber walls and the aerial coverage of the substrate support may decrease. The second electronic controller 140 may have a similar effect, increasing and decreasing the aerial coverage of the plasma above the substrate support as the capacitance of the second electronic controller 140 may be changed.

[0035]

[0037] The electronic sensors 130, 138 may be used to regulate the respective circuits 128, 136 in a closed loop. Depending on the sensor type used, a current or voltage set point may be attached to each sensor, which may be equipped with control software that determines adjustments to the respective electronic controllers 134, 140 to minimize deviations from the set point. As a result, the plasma shape may be selected and dynamically controlled during processing. Although the above discussion is based on the electronic controllers 134, 140 being variable capacitors, it should be understood that any electronic component with adjustable characteristics may be used to provide adjustable impedance to the regulation circuits 128 and 136.

[0036]

[0038] FIG. 2 illustrates exemplary operations in a semiconductor substrate processing method 200 according to some embodiments of the present technique. The method can be performed in a variety of processing chambers, including the processing chamber 100 described above. The method 200 can include several optional operations that may or may not be specifically associated with some embodiments of the method according to the present technique. For example, many of the operations are described to provide a broader scope of structure formation, but are not critical to the technique or may be performed by alternative methodologies as will be readily understood. The method 200 can illustrate operations shown generally in FIGS. 3A-3D, which are described in conjunction with the operations of the method 200. It should be understood that the figures show only partial schematic views, and that the substrate can include any number of additional materials and features having various properties and aspects, as shown in the figures.

[0037]

[0039] Method 200 may include additional operations prior to the commencement of the listed operations. For example, the additional processing operations may include forming structures on the semiconductor substrate, which may include both the formation and removal of materials. Pre-processing operations may be performed in the chamber in which method 200 may be performed, or the processing may be performed in one or more other processing chambers prior to delivering the substrate to the semiconductor processing chamber in which method 200 may be performed. In either case, method 200 may optionally include delivering the semiconductor substrate to a processing region of a semiconductor processing chamber, such as processing chamber 100 described above, or other chamber, which may include the components described above. The substrate may be deposited on a substrate support, which may be a pedestal, such as substrate support 104, which may reside in a processing region of a chamber, such as processing volume 120 described above. An exemplary substrate 305 is shown in FIG. 3A. Substrate 305 may include nitrides, oxides, carbides, or any other film or layer that may be useful in semiconductor processing. Although only a single layer is shown in FIG. 3A, substrate 305 may include one or more additional layers.

[0038]

[0040] In some embodiments, the substrate 305 can be pretreated. For example, in operation 205, a hydrogen- (such as ammonia) containing precursor, and / or a combination of a nitrogen-containing precursor, such as dinitrogen, and a hydrogen-containing precursor, such as diatomic hydrogen, can be flowed into a processing region of a processing chamber to form a plasma to pretreat the substrate 305. Such pretreatment can improve adhesion of a subsequently deposited hard mask to the substrate 305. Without intending to be bound by a particular theory, the improved adhesion can be achieved in part by nitrogen implantation into the substrate 305, or a nitride that can be formed by nitrogen and a substrate material, such as silicon nitride. The implanted nitrogen and / or the formed nitride can change the lattice constant of the substrate 305 to be closer to the lattice constant of the deposited hard mask material, such as a boron-containing hard mask material. The improved lattice match can improve adhesion of the hard mask material to the substrate 305. Improved adhesion can also be achieved in part due to a hydrogen-terminated surface, such as a hydrogen-terminated silicon surface, that can be formed. The improved adhesion can reduce or eliminate delamination or cracking of the deposited hardmask during subsequent heating of the hardmask, as discussed in more detail below. Once pretreatment is complete, the treatment area can be purged to remove residual hydrogen and nitrogen-containing precursors, nitrogen-containing precursors, and / or hydrogen-containing precursors.

[0039]

[0041] In operation 210, a first precursor, such as a boron-containing precursor, may be delivered to the processing region of the processing chamber. Depending on the application, in some embodiments, the method 200 may further include delivering a second precursor to the processing region of the processing chamber in operation 215. For example, in some embodiments, a hard mask including germanium and boron may be suitable for certain applications. Thus, in operation 215, a germanium-containing precursor may be delivered to the processing region of the chamber. In some embodiments, a hard mask including oxygen and boron may be suitable for certain applications. Thus, in operation 215, an oxygen-containing precursor may be delivered to the processing region of the processing chamber. In some embodiments, a hard mask including silicon and boron may be suitable for certain applications. Thus, in operation 215, a silicon-containing precursor may be delivered to the processing region of the chamber. In some embodiments, a hard mask including carbon and boron may be suitable for certain applications. Thus, in operation 215, a carbon-containing precursor may be delivered to the processing region of the chamber. In some embodiments, a hard mask including nitrogen and boron may be suitable for certain applications. Thus, in operation 215, a nitrogen-containing precursor can be delivered to the processing region of the chamber. In some embodiments, a hard mask including phosphorous and boron can be suitable for certain applications. Thus, in operation 215, a phosphorous-containing precursor can be delivered to the processing region of the chamber.

[0040]

[0042] Depending on the particular application, various other precursors can be delivered to the processing region to form a hard mask having an appropriate elemental composition. In some embodiments, operation 215 can be omitted. Thus, the formed hard mask may not include silicon, germanium, oxygen, carbon, nitrogen, or phosphorus. The formed hard mask may include substantially all boron, but may incorporate small amounts of hydrogen, as discussed below. Although the elemental composition of the hard mask will vary depending on the application, the hard masks described herein can generally include a high content of boron, for example, greater than 50%, about 55% or more, about 60% or more, about 65% or more, about 70% or more, about 75% or more, about 80% or more, about 80% or more, about 85% or more, about 90% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. By increasing the boron content, for example, increasing the boron content above 50%, increased optical transparency characterized by a reduced extinction coefficient, an increased deposition rate, increased etch selectivity, and / or other improved hardmask properties can be achieved. If the boron content is less than 50%, one or more of the above properties of the hardmask, such as high optical transparency, low extinction coefficient, high deposition rate, high etch selectivity, etc., may not be achieved.

[0041]

[0043] In some embodiments, one or more precursors can be diluted with a diluent gas to achieve different levels of incorporation of various elements into the hard mask. In some embodiments, the diluent gas can include a hydrogen-containing diluent gas, such as diatomic hydrogen. The diluent gas can be mixed with one or more precursors to adjust the concentration of one or more precursors delivered to the processing chamber. Thus, different incorporation of each element into the hard mask can be achieved for different applications. In some embodiments, the diluent gas can be mixed with one or more of the boron-containing precursor, germanium-containing precursor, oxygen-containing precursor, carbon-containing precursor, nitrogen-containing precursor, and / or phosphorus-containing precursor before delivering the precursor to the processing chamber to achieve a desired concentration or incorporation of boron, germanium, oxygen, carbon, nitrogen, and / or phosphorus in the hard mask. In some embodiments, the diluent gas can be flowed separately into the processing region of the processing chamber without being mixed with the one or more precursors. By mixing a dilution gas with one or more precursors prior to delivery to the processing chamber and / or by delivering the dilution gas separately to the processing chamber, the flow rates of the various precursors and / or dilution gases can be controlled to limit variations in the overall flow rates and / or to limit disturbances to the deposition conditions in the processing chamber to improve film quality.

[0042]

[0044] In some embodiments, plasma enhanced deposition, such as plasma enhanced chemical vapor deposition, can be performed in some embodiments of the present technique. For example, in operation 220, all delivered precursors can be used to form a plasma in the processing region of the processing chamber, which can promote material reaction and deposition. In some embodiments, a plasma of an inert gas, such as argon, helium, or other inert gas, can be formed in the processing region prior to delivery of one or more precursors in operations 210, 215. Thus, when the precursors can be delivered to the processing region, the precursors can be excited by the plasma to promote the reaction and deposition process. Forming the inert gas plasma prior to delivering the precursors can provide better control of the plasma power when the precursors can be initially excited, and therefore improve the quality of the deposited hard mask.

[0043]

[0045] In operation 225, a hardmask layer 310 may be deposited on the substrate 305, as shown in FIG. 3B. Depending on the precursors provided, the hardmask layer 310 may include or incorporate one or more of boron, germanium, oxygen, silicon, carbon, nitrogen, phosphorus, and / or hydrogen. In some embodiments, the hardmask layer 310 may include substantially only boron. For example, the hardmask layer 310 may include at least 80% boron. In some embodiments, the amount of boron included or incorporated in the hardmask layer 310 may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 92% or more, about 94% or more, about 96% or more, about 98% or more, about 99% or more, or more than boron. In some embodiments, the hardmask layer 310 may include 100% boron. As discussed further below, increasing or incorporating boron may, among other things, increase the etch selectivity of the hardmask layer 310.

[0044]

[0046] In some embodiments, the hardmask layer 310 may include germanium and boron. The hardmask layer 310 may include a boron content greater than germanium, and thus the hardmask may be referred to as a boron hardmask doped with germanium. Depending on the application, the hardmask layer 310 may include 20% or less germanium. In some embodiments, the amount of germanium included or incorporated in the hardmask layer 310 may be about 20% or less, about 18% or less, about 16% or less, about 14% or less, about 12% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the amount of boron contained or incorporated in the hardmask layer 310, which may include both germanium and boron, may be at least 80%, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. As discussed further below, the incorporation of germanium may provide improved etch selectivity, a further reduced extinction coefficient, and / or other benefits of the hardmask layer 310.

[0045]

[0047] In some embodiments, the hardmask layer 310 may include oxygen and boron. The hardmask layer 310 may include a boron content greater than oxygen, and thus the hardmask may be referred to as an oxygen-doped boron hardmask. Depending on the application, the hardmask layer 310 may include 20% or less oxygen. In some embodiments, the amount of oxygen included or incorporated in the hardmask layer 310 may be about 20% or less, about 18% or less, about 16% or less, about 14% or less, about 12% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the amount of boron contained or incorporated in the hardmask layer 310, which may include both oxygen and boron, can be at least 80%, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. As discussed further below, incorporating oxygen into a high boron content hardmask material can, among other things, further reduce the extinction coefficient.

[0046]

[0048] In some embodiments, the hardmask layer 310 may include silicon and boron. The hardmask layer 310 may include a much higher boron content than silicon, and the hardmask may be referred to as a silicon-doped high boron content hardmask. Depending on the application, the hardmask layer 310 may include 5% or less silicon. In some embodiments, the amount of silicon included or incorporated in the hardmask layer 310 may be about 5% or less, about 4.5% or less, about 4% or less, about 3.5% or less, about 3% or less, about 2.5% or less, about 2% or less, about 1.5% or less, about 1% or less, about 0.75% or less, about 0.5% or less, about 0.25% or less, or less. In some embodiments, the amount of boron contained or incorporated in the silicon doped high boron content hardmask layer 310 may be at least about 80% or more, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 97% or more, about 98% or more, about 99% or more, or more. The remainder of the hardmask layer 310 may include a small amount of hydrogen.

[0047]

[0049] In some embodiments, the hardmask layer 310 may include carbon and boron. The hardmask layer 310 may include a higher boron content than carbon, and thus the hardmask may also be referred to as a carbon-doped boron hardmask. Depending on the application, the hardmask layer 310 may include 10% or less carbon. In some embodiments, the amount of carbon included or incorporated in the hardmask layer 310 may be about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the amount of boron contained or incorporated in the hardmask layer 310, which may include both carbon and boron, may be at least 80%, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. The remainder of the hardmask layer 310 may include a small amount of hydrogen.

[0048]

[0050] In some embodiments, the hardmask layer 310 may include nitrogen and boron. The hardmask layer 310 may include a boron content greater than nitrogen, and thus the hardmask may be referred to as a nitrogen-doped boron hardmask. Depending on the application, the hardmask layer 310 may include 10% or less nitrogen. In some embodiments, the amount of nitrogen included or incorporated in the hardmask layer 310 may be about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the amount of boron contained or incorporated in the hardmask layer 310, which may include both nitrogen and boron, may be at least 80%, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. The remainder of the hardmask layer 310 may include a small amount of hydrogen.

[0049]

[0051] In some embodiments, the hardmask layer 310 may include phosphorus and boron. The hardmask layer 310 may include a boron content greater than phosphorus, and thus the hardmask may be referred to as a phosphorus-doped boron hardmask. Depending on the application, the hardmask layer 310 may include 10% or less phosphorus. In some embodiments, the amount of phosphorus nitrogen included or incorporated in the hardmask layer 310 may be about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the amount of boron contained or incorporated in the hardmask layer 310, which may include both phosphorus and boron, may be at least 80%, and may be about 80% or more, about 82% or more, about 84% or more, about 86% or more, about 88% or more, about 90% or more, about 91% or more, about 92% or more, about 93% or more, about 94% or more, about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, or more. The remainder of the hardmask layer 310 may include a small amount of hydrogen.

[0050]

[0052] In some embodiments, where hydrogen may be used as a diluent gas, the hardmask layer 310 may further include a relatively small amount of hydrogen, for example, 20% or less. In some embodiments, the amount of hydrogen included or incorporated in the hardmask layer 310 may be about 20% or less, about 18% or less, about 16% or less, about 14% or less, about 12% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, about 0.8% or less, about 0.6% or less, about 0.4% or less, about 0.2% or less, about 0.1% or less, or less. In some embodiments, the hardmask layer 310 may be free of hydrogen.

[0051]

[0053] In some embodiments, an optional or additional heating operation 230 can be performed. In some embodiments, the heating operation 230 can be performed to reduce the hydrogen content in the deposited hardmask. In some embodiments, the deposited hardmask can be exposed to higher temperatures and thus heated during subsequent operations for other processing needs, such as deposition and / or etching operations to form structures on the substrate 305. As described above, in some embodiments, a pretreatment operation, such as the pretreatment operation 205 described above, can be performed before depositing the hardmask layer 310 to improve adhesion between the hardmask layer 310 and the substrate 305. The pretreatment operation can prevent peeling or cracking during subsequent heating or when the hardmask layer may be exposed to relatively high temperatures. Depending on the application, the substrate 305 including the hardmask layer 310 can be heated to a temperature of about 500° C. or higher, about 550° C. or higher, about 600° C. or higher, about 650° C. or higher, or higher. The hardmask layer 310 can be heated for between about 1 second and about 60 minutes, between about 10 seconds and about 30 minutes, between about 30 seconds and about 10 minutes, or between about 1 minute and about 5 minutes. In some embodiments, the hardmask layer 310 can be heated for between about 5 minutes and about 55 minutes, between about 10 minutes and about 50 minutes, between about 15 minutes and about 45 minutes, between about 20 minutes and about 40 minutes, or between about 25 minutes and about 35 minutes. The hardmask layer 310 having one or more elemental compositions described herein may not exhibit crack lines in the deposited hardmask layer and / or no delamination may be observed upon completion of the heating operation. For example, if a hardmask including substantially pure boron can be heated at about 600° C. for about 30 minutes, no delamination or crack lines may be observed in the deposited hardmask layer. Thus, the hardmask layer 310 described herein can exhibit good thermal stability and provide good adhesion, which can be beneficial in cases where the substrate 305 may be subsequently heated during various other processing operations.

[0052]

[0054] In some embodiments, the method 200 may optionally or additionally include, in operation 235, forming an etch pattern 315 on top of the hard mask layer 310, as shown in FIG. 3C, and etching the hard mask layer 310 to create holes 320 in the hard mask layer 310, as shown in FIG. 3D. In some embodiments, the etch pattern 315 may then be removed and the etched hard mask layer 310 may be utilized to etch one or more layers below the hard mask layer 310 on the substrate 305. Although only one hole 320 is shown in FIG. 3D, depending on the application, multiple holes 320 may be etched in the hard mask layer 310, and in some embodiments, there may be tens, hundreds, or thousands of holes similar to the etched hole 320 shown in FIG. The etched holes may be characterized by a very high aspect ratio or height to width ratio, for example, greater than or equal to about 10:1. In some embodiments, the aspect ratio of the etched holes may be greater than about 20:1, greater than about 50:1, greater than about 50:1, greater than about 75:1, greater than about 100:1, or even greater.

[0053]

[0055] Conventional hardmask materials, such as amorphous silicon, have difficulty achieving uniform etching from the top to the bottom of an etched hole due to the relatively low etch selectivity provided by conventional hardmask materials. The hardmask materials described herein exhibit improved etch selectivity over conventional hardmask materials, and thus may enable uniform top-to-bottom etching. For example, the various hardmask materials described herein may have an etch selectivity to amorphous silicon of about 1.5:1 or more, about 2:1 or more, about 2.5:1 or more, about 3:1 or more, about 3.5:1 or more, about 4:1 or more, about 4.5:1 or more, about 5:1 or more, or more.

[0054]

[0056] Additionally, the inventors can achieve even increased etch selectivity of the hardmask as described herein by increasing the boron content and / or doping the boron with an appropriate dopant such as germanium, oxygen, carbon, nitrogen, phosphorus, etc. In some embodiments, when compared to a silicon doped boron hardmask material having about 30% silicon and 65% boron, which can be referred to as a 30% silicon doped 65% boron hardmask material, in various embodiments, the various hardmask materials described herein can have an etch selectivity of greater than 1:1, e.g., about 1.1:1 or greater, about 1.2:1 or greater, about 1.3:1 or greater, about 1.4:1 or greater, about 1.5:1 or greater, about 1.6:1 or greater, about 1.7:1 or greater, about 1.8:1 or greater, about 1.9:1 or greater, about 2:1 or greater, or greater, relative to a 30% silicon doped 65% boron hardmask material. The 30% silicon doped, 65% boron hardmask material is compared to other hardmask materials described herein, which are also an embodiment of the high boron content hardmask materials described herein, and are provided here for ease of understanding.

[0055]

[0057] In some embodiments, where the hardmask material may include a high boron content, such as any of the silicon-doped high boron content hardmask materials described above, of at least 80% boron and less than 5% silicon, the hardmask material may have an etch selectivity of about 1.4:1 or greater, about 1.5:1 or greater, about 1.6:1 or greater, about 1.7:1 or greater, or greater, relative to a 30% silicon-doped 65% boron hardmask material. If the hardmask material may include a high boron content, such as any of the high boron hardmask materials listed above, or may include substantially all boron, e.g., at least 80% boron with some hydrogen incorporation and no silicon, the hardmask material may have an etch selectivity of about 1.5:1 or more, about 1.6:1 or more, about 1.7:1 or more, about 1.8:1 or more, about 1.9:1 or more, about 2:1 or more, or more, to a 65% boron hardmask material doped with 30% silicon. If the hardmask material may include boron doped with germanium, such as any of the germanium doped boron materials listed above, the germanium doped boron hardmask material may have an etch selectivity of about 1.5:1 or more, about 1.6:1 or more, about 1.7:1 or more, about 1.8:1 or more, or more, to a 65% boron hardmask material doped with 30% silicon. When the hardmask material can include oxygen doped boron, such as any of the oxygen doped boron materials described above, the oxygen doped boron hardmask material can have an etch selectivity of about 1.2:1 or more, about 1.3:1 or more, about 1.4:1 or more, about 1.5:1 or more, or more, relative to a 30% silicon doped 65% boron hardmask material. When the hardmask material can include carbon doped boron, such as any of the carbon doped boron materials described above, the carbon doped boron hardmask material can have an etch selectivity of about 1:1 or more, about 1.1:1 or more, about 1.2:1 or more, about 1.3:1 or more, about 1.4:1 or more, about 1.5:1 or more, or more, relative to a 30% silicon doped 65% boron hardmask material.Where the hardmask material may include nitrogen doped boron, such as any of the nitrogen doped boron materials described above, the nitrogen doped boron hardmask material may have an etch selectivity of about 1:1 or more, about 1.1:1 or more, about 1.2:1 or more, about 1.3:1 or more, about 1.4:1 or more, about 1.5:1 or more, or more, to a 30% silicon doped 65% boron hardmask material. Where the hardmask material may include phosphorus doped boron, such as any of the phosphorus doped boron materials described above, the phosphorus doped boron hardmask material may have an etch selectivity of about 1:1 or more, about 1.1:1 or more, about 1.2:1 or more, about 1.3:1 or more, about 1.4:1 or more, about 1.5:1 or more, or more, to a 30% silicon doped 65% boron hardmask material.

[0056]

[0058] The improved etch selectivity exhibited by various high boron content hardmask materials can enable the utilization of much thinner hardmask layers 310 relative to conventional hardmask materials. For example, to effectively perform various etching processes for processing the substrate 305, a hardmask layer formed of amorphous silicon may need to have a much thicker thickness compared to a hardmask layer 310 formed of various hardmask materials described herein. To perform similar etching processes, the thickness of the hardmask layer 310 as described herein may be less than 50%, less than 40%, or less than 30% of the thickness of a hardmask layer formed of amorphous silicon. Depending on the application, the thickness of the hardmask layer 310 described herein may be 4,000 Å or less, about 3,500 Å or less, about 3,000 Å or less, about 2,500 Å or less, about 2,000 Å or less, about 1,500 Å or less, 1,000 Å or less, or less than about 500 Å or less.

[0057]

[0059] Additionally, the hardmask layer 310 formed of the various hardmask materials described herein may achieve a much lower extinction coefficient. The reduced extinction coefficient may increase the transparency of the hardmask layer 310, which may facilitate alignment of the substrate during various etching and / or deposition processes. In some embodiments, the hardmask layer 310 may have an extinction coefficient at 633 nm of less than 0.3, less than 0.25, less than 0.2, or less. For example, the hardmask layer 310 may include oxygen-doped boron, and the extinction coefficient of the hardmask layer 310 may be less than 0.2, less than 0.19, less than 0.18, less than 0.17, less than 0.16, less than 0.15, less than 0.14, less than 0.13, less than 0.12, less than 0.11, or less. In some embodiments, a further reduced extinction coefficient, e.g., less than 0.1, can be achieved by increasing the incorporation of oxygen into the hard mask layer 310, e.g., up to 20%. The increased oxygen content can also enable a higher deposition rate to be achieved, thereby improving process throughput. However, increased oxygen content can decrease etch selectivity. Thus, by adjusting the oxygen content depending on the application, a reduced extinction coefficient, improved etch selectivity, or a balance of both can be achieved.

[0058]

[0060] The various hardmask materials described herein can also enable much higher deposition rates for forming the hardmask layer 310 as compared to deposition rates provided by conventional hardmask materials such as amorphous silicon. For example, the various hardmask materials described herein can be deposited at deposition rates of about 5,000 Å / min or greater, about 5,500 Å / min or greater, about 6,000 Å / min or greater, about 6,500 Å / min or greater, or greater. In contrast, amorphous silicon can only be deposited at a deposition rate of about 2,000 Å / min.

[0059]

[0061] Various hardmask materials described herein can further provide good mechanical properties such as high elastic modulus and / or high hardness. For example, a 65% boron hardmask material doped with 30% silicon can be characterized by a hardness value or elastic modulus to E / H value of about 210 / 22 Gpa. If the boron content can be increased to at least 80%, such as at least 90%, and the silicon content can be limited to less than 5%, such as less than 3%, the silicon-doped high boron content hardmask material can be characterized by an E / H value of about 252 / 25 Gpa or more. If the hardmask material contains substantially only boron, for example, at least 90% or at least 95% boron incorporated with a small amount of hydrogen, but no silicon, the hardmask material can be characterized by an E / H value of about 260 / 26 Gpa or more. If the hardmask material is germanium doped and may contain a high boron content, e.g., at least 80% boron, such as greater than 85% boron, the hardmask material may be characterized by an E / H value of 267 / 27 Gpa or greater.

[0060]

[0062] Some hardmasks formed with some of the hardmask materials described herein may have a tensile stress of about 500 MPa to about 700 MPa, e.g., between about 550 MPa and about 650 MPa. Hardmasks formed with conventional hardmask materials may have a compressive stress. Tensile stress in hardmasks formed with the hardmask materials described herein can be reduced by increasing the plasma power during deposition and / or by relaxing via annealing after deposition, such as the heating operation 230 described above.

[0061]

[0063] In the present technology, any number of precursors can be used to form a high boron content hardmask. For example, the boron-containing precursors used herein can include boron, such as borane, diborane, or other multi-center bonded boron materials, as well as any other boron-containing material that can be used to produce a high boron content hardmask. The germanium-containing precursors used herein can include any germanium-containing material, such as germanium. The oxygen-containing precursors can include ozone, diatomic oxygen, carbon oxides, such as carbon dioxide, nitrogen oxides, such as dinitrogen monoxide, or other oxygen-containing materials. The silicon-containing precursors used herein can include any silicon-containing material, such as silane, disilane, and other silicon-containing materials. The carbon-containing precursors used herein can include any carbon-containing material, such as hydrocarbons, e.g., alkanes, alkenes, halogenated alkenes, alkynes, aromatic hydrocarbons, or other carbon-containing materials. The nitrogen-containing precursors can include any nitrogen-containing material, such as ammonia, pyridine, aliphatic amines, amines, nitriles, or other nitrogen-containing materials. The phosphorus-containing precursor may include any phosphorus-containing material, such as phosphine.

[0062]

[0064] The processing conditions may also affect the properties and / or quality of the hardmask. For example, in some embodiments, when depositing the hardmask layer, the substrate may be maintained at a temperature of about 400° C. or higher, about 420° C. or higher, about 440° C. or higher, about 460° C. or higher, about 480° C. or higher, about 500° C. or higher, about 520° C. or higher, about 540° C. or higher, about 550° C. or higher, or higher. The inventors have observed that as the deposition temperature increases, the deposition rate may increase, although the stress and / or extinction coefficient may also increase. Thus, the deposition temperature may be selected to achieve a higher deposition rate, a lower extinction coefficient, a lower stress level, or a balance of the above. In some embodiments, when depositing the hardmask layer, the substrate may be heated to about 480° C. to achieve a high deposition rate while maintaining a relatively low extinction coefficient and / or stress of the deposited layer.

[0063]

[0065] In some embodiments, the plasma can be generated using a capacitively coupled plasma source. The process pressure during hardmask deposition can be maintained at about 20 Torr or less, about 15 Torr or less, about 10 Torr or less, about 9 Torr or less, about 8 Torr or less, about 7 Torr or less, about 6 Torr or less, about 5 Torr or less, about 4 Torr or less, about 3 Torr or less, about 2 Torr or less, or less. The plasma power during hardmask deposition can be maintained between about 100W and 3000W, between about 200W and about 2,000W, between about 300W and about 1,000W, between about 400W and about 700W, or between about 500W and about 600W in various embodiments.

[0064]

[0066] In some embodiments, the plasma can be generated using an inductively coupled plasma source. The process pressure during hardmask deposition can be maintained between about 1 mTorr and about 200 mTorr. In some embodiments, the process pressure can be maintained at about 200 mTorr or less, about 150 mTorr or less, about 100 mTorr, about 90 mTorr or less, about 80 mTorr, about 70 mTorr or less, about 60 mTorr or less, about 50 mTorr or less, about 40 mTorr or less, about 30 mTorr or less, about 20 mTorr or less, about 10 mTorr or less, about 9 mTorr or less, about 8 mTorr or less, about 7 mTorr, about 6 mTorr or less, about 5 mTorr, about 4 mTorr or less, about 3 mTorr or less, about 2 mTorr or less, or less. The plasma power during hardmask deposition can be maintained between about 1 kW and about 20 kW, between about 1 kW and about 18 kW, between about 2 kW and about 15 kW, between about 3 kW and about 12 kW, or between about 5 kW and about 10 kW, in various embodiments.

[0065]

[0067] A variety of etching chemistries can be utilized to etch the hardmask layer 310. For example, a fluorine-containing precursor and an oxygen-containing precursor can be flowed into a processing region of a processing chamber to form a plasma to etch the hardmask layer 310. The fluorine-containing precursor can include a fluorocarbon or other fluorine-containing precursor. The oxygen-containing precursor can include oxygen, ozone, or other oxygen-containing precursor. The fluorine-containing precursor and the oxygen-containing precursor are described merely by way of example, and a variety of other etching chemistries can be utilized depending on the hardmask material and the material to be etched or preserved relative to the hardmask material. Additionally, although a plasma dry etching process is described herein by way of example, the hardmask materials described herein can also be removed or etched using any suitable wet etching process.

[0066]

[0068] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

[0067]

[0069] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, some well-known processes and elements have not been described to avoid unnecessarily obscuring the current technology. Thus, the above description should not be construed as limiting the scope of the technology. Furthermore, although a method or process may be described sequentially or stepwise, it should be understood that operations may be performed simultaneously or in a different order than described.

[0068]

[0070] Where a range of values ​​is presented, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed to the smallest unit of the unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range, as well as any other stated or intervening value in that stated range, are also encompassed. The upper and lower limits of these smaller ranges may be individually included or excluded in the range, and each range in which either, neither, or both limits are included in the narrower range is also encompassed within the technology, subject to the specifically excluded limit in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of the included limits are also included.

[0069]

[0071] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly indicates otherwise. Thus, for example, reference to "a precursor" includes a reference to a plurality of such precursors, reference to "a layer" includes a reference to one or more layers and equivalents thereof known to those skilled in the art, and so forth.

[0070]

[0072] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. delivering a boron-containing precursor to a processing region of a semiconductor processing chamber; forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber; depositing a boron-containing material onto a substrate disposed in the processing region of the semiconductor processing chamber, the boron-containing material comprising greater than 50% boron; and delivering a germanium-containing precursor to the processing region of the semiconductor processing chamber; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the germanium-containing precursor in the processing region of the semiconductor processing chamber; and The method, wherein the boron-containing material further comprises less than 20% germanium.

2. Delivering a boron-containing precursor to a processing region of a semiconductor processing chamber; forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber; depositing a boron-containing material onto a substrate disposed in the processing region of the semiconductor processing chamber, the boron-containing material comprising greater than 50% boron; and The method includes heating the boron-containing material to a temperature in the range between about 500° C. and about 650° C. for a period of time between about 1 second and about 60 minutes.

3. The method of claim 2 , wherein the boron-containing material comprises substantially all boron.

4. The method of claim 2 , wherein the boron-containing material comprises only boron and hydrogen.

5. delivering an oxygen-containing precursor to the processing region of the semiconductor processing chamber; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the oxygen-containing precursor in the processing region of the semiconductor processing chamber; and 3. The method of claim 1 or 2, wherein the boron-containing material further comprises less than 20% oxygen.

6. delivering a silicon-containing precursor to the processing region of the semiconductor processing chamber; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the silicon-containing precursor in the processing region of the semiconductor processing chamber; and The method of claim 1 or 2, wherein the boron-containing material further comprises less than 5% silicon.

7. the boron-containing precursor is a first precursor; delivering a second precursor to the processing region of the semiconductor processing chamber, comprising: further comprising delivering a second precursor to the processing region of the semiconductor processing chamber, the second precursor comprising at least one of a carbon-containing precursor, a nitrogen-containing precursor, or a phosphorus-containing precursor; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the second precursor in the processing region of the semiconductor processing chamber; and The method of claim 1 or 2, wherein the boron-containing material further comprises less than 10% carbon, nitrogen, or phosphorus.

8. The method of claim 1 or 2, wherein the boron-containing material is silicon-free.

9. 3. The method of claim 1 or 2, wherein the boron-containing material is characterized by an extinction coefficient of less than 0.

3.

10. 3. The method of claim 1 or 2, wherein the boron-containing material has an etch selectivity to amorphous silicon of greater than 1.5:

1.

11. 3. The method of claim 1 or 2, wherein the boron-containing material has an etch selectivity of greater than 1.5:1 to a silicon-doped boron hardmask material comprising about 30% silicon and about 65% boron.

12. 3. The method of claim 1 or 2, wherein the boron-containing material is deposited at a deposition rate of about 5,000 Å / min or greater.

13. 3. The method of claim 1 or 2, wherein a temperature in the processing region of the semiconductor processing chamber is maintained between about 400°C and about 550°C.

14. delivering a nitrogen-hydrogen containing precursor to the processing region of the semiconductor processing chamber; forming a plasma from the nitrogen-hydrogen containing precursor; and treating the substrate with the plasma formed from the nitrogen-hydrogen containing precursor; The method of claim 1 or 2, further comprising:

15. delivering a boron-containing precursor to a processing region of a semiconductor processing chamber; forming a plasma from the boron-containing precursor in the processing region of the semiconductor processing chamber; depositing a boron-containing material on a substrate disposed in the processing region of the semiconductor processing chamber, the boron-containing material comprising greater than 50% boron, the boron-containing material configured to be etched to form high aspect ratio features; and delivering a germanium-containing precursor to the processing region of the semiconductor processing chamber; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the germanium-containing precursor in the processing region of the semiconductor processing chamber; and The method, wherein the boron-containing material further comprises less than 20% germanium.

16. The method of claim 15 , wherein the boron-containing material is silicon-free.

17. delivering an oxygen-containing precursor to the processing region of the semiconductor processing chamber; forming the plasma in the processing region of the semiconductor processing chamber further comprises forming a plasma from the oxygen-containing precursor in the processing region of the semiconductor processing chamber; and 16. The method of claim 15, wherein the boron-containing material further comprises less than 20% oxygen.

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