Dielectric substrate and method for forming same

Abstract

The present disclosure relates to a dielectric substrate that can include a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer. The first filled polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE This disclosure relates to dielectric substrates and methods of forming same. In particular, this disclosure relates to dielectric substrates for use in copper clad laminate structures and methods of forming same. [Background technology]

[0002] Copper-clad laminates (CCLs) include a dielectric material laminated on or between two layers of conductive copper foil. Subsequent operations convert such CCLs into printed circuit boards (PCBs). When used to form PCBs, the conductive copper foil is selectively etched to form circuits with through-holes that are drilled between layers and metallized, i.e., plated, to establish electrical conductivity between layers in a multilayer PCB. CCLs must therefore exhibit excellent thermomechanical stability. PCBs are also routinely exposed to excessively high temperatures during manufacturing operations, e.g., soldering, as well as during use. As a result, PCBs must function at continuous temperatures in excess of 200°C without deformation and must withstand very large temperature fluctuations while resisting moisture absorption. The dielectric layers of CCLs act as spacers between conductive layers and can minimize electrical signal loss and crosstalk by blocking electrical conductivity. The lower the dielectric constant (dielectric constant) of the dielectric layer, the faster the speed of electrical signals through the layer. Therefore, a low dissipation factor, which depends on temperature and frequency, as well as the polarizability of the material, is very important for high frequency applications. Accordingly, improved dielectric materials and dielectric layers that can be used in PCBs and other high frequency applications are desired. Summary of the Invention

[0003] According to a first aspect, the dielectric substrate can include a first fluoropolymer adhesive layer, a polyimide layer overlying the fluoropolymer adhesive layer, and a first filled polymer layer overlying the polyimide layer. The first filled polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

[0004] According to another embodiment, the copper clad laminate may include a copper foil layer and a dielectric substrate covering the copper foil layer. The dielectric substrate may include a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer. The first filled polymer layer may include a resin matrix component and a first ceramic filler component. The first ceramic filler component may include a first filler material. The first filler material may further have an average particle size of about 10 micrometers or less.

[0005] According to yet another aspect, the printed circuit board can include a copper foil layer and a dielectric substrate covering the copper foil layer. The dielectric substrate can include a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer. The first filled polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

[0006] According to another aspect, a method of forming a dielectric substrate can include providing a first fluoropolymer-based adhesive layer, providing a polyimide layer overlying the first fluoropolymer-based adhesive layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer overlying the polyimide layer. The first ceramic filler precursor component can include a first filler precursor material. The first filler precursor material can further have an average particle size of about 10 micrometers or less.

[0007] According to yet another aspect, a method of forming a copper clad laminate can include providing a copper foil and forming a dielectric layer overlying the copper foil. Forming the dielectric layer can include providing a first fluoropolymer-based adhesive layer, providing a polyimide layer overlying the first fluoropolymer-based adhesive layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer overlying the polyimide layer. The first ceramic filler precursor component can include a first filler material. The first filler precursor material can further have an average particle size of about 10 micrometers or less.

[0008] According to yet another aspect, a method of forming a printed circuit board can include providing a copper foil and forming a dielectric layer overlying the copper foil. Forming the dielectric layer can include providing a first fluoropolymer-based adhesive layer, providing a polyimide layer overlying the first fluoropolymer-based adhesive layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer overlying the polyimide layer. The first ceramic filler precursor component can include a first filler material. The first filler precursor material can further have an average particle size of about 10 micrometers or less. [Brief description of the drawings]

[0009] Embodiments are illustrated by way of example and not limitation in the accompanying figures. [Figure 1] 1 includes diagrams illustrating a method of forming a dielectric layer according to embodiments described herein. [Figure 2a] 1A-1C illustrate configurations of dielectric layers formed in accordance with embodiments described herein. [Figure 2b] 1A-1C illustrate configurations of dielectric layers formed in accordance with embodiments described herein. [Diagram 3] 1 includes diagrams illustrating a method of forming a copper clad laminate according to embodiments described herein. [Figure 4a] 1A-1C illustrate configurations of copper clad laminates formed in accordance with embodiments described herein. [Figure 4b] 1A-1C illustrate configurations of copper clad laminates formed in accordance with embodiments described herein. [Diagram 5] 1 includes diagrams illustrating a method of forming a printed circuit board according to embodiments described herein. [Figure 6a] 1 illustrates a configuration of a printed circuit board formed in accordance with embodiments described herein. [Figure 6b] 1 illustrates a configuration of a printed circuit board formed in accordance with embodiments described herein.

[0010] Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The following discussion focuses on specific implementations and embodiments of the teachings. The detailed description is provided to help explain the specific embodiments and should not be construed as a limitation on the scope or applicability of the disclosure or teachings. It will be understood that other embodiments can be used based on the disclosure and teachings provided herein.

[0012] The terms "comprises," "comprising," "includes," "including," "has," "having," or any other variations thereof, are intended to cover non-exclusive inclusions. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to only those features, but may include other features not expressly listed or that are inherent to such method, article, or apparatus. Further, unless expressly stated to the contrary, "or" refers to an inclusive or, not an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or absent), A is false (or absent) and B is true (or present), and both A and B are true (or present).

[0013] Additionally, the use of "a" or "an" is used to describe elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be understood as one, at least one, or the singular as including the plural, or vice versa, unless it is clear that this is meant to be otherwise. For example, where a single item is described herein, two or more items can be used in place of the single item. Similarly, where two or more items are described herein, the two or more items can be replaced with a single item.

[0014] Embodiments described herein are generally directed to a dielectric substrate that may include a first fluoropolymer based adhesive layer, a polyimide layer overlying the fluoropolymer based adhesive layer, and a first filled polymer layer overlying the polyimide layer, where the first filled polymer layer may include a first resin matrix component and a first ceramic filler component.

[0015] Turning first to the method of forming the dielectric substrate, Figure 1 includes a diagram illustrating a forming method 100 for forming a dielectric substrate according to embodiments described herein. According to certain embodiments, the forming method 100 can include a first step 110 of providing a first fluoropolymer-based adhesive layer, a second step 120 of providing a polyimide layer overlying the first fluoropolymer-based adhesive layer, a third step 130 of combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and a fourth step 140 of forming the first forming mixture into a first filled polymer layer overlying the polyimide layer.

[0016] According to yet another embodiment, the first fluoropolymer adhesive layer can have a particular average thickness. For example, the first fluoropolymer adhesive layer can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet another embodiment, the average thickness of the first fluoropolymer adhesive layer may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the first fluoropolymer adhesive layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the first fluoropolymer based adhesive layer may be within a range between and including any of the minimum and maximum values ​​listed above.

[0017] According to yet another embodiment, the first fluoropolymer adhesive layer may include a specific material. For example, the first fluoropolymer adhesive layer may include, but is not limited to, fluoropolymers (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the first fluoropolymer adhesive layer may be composed of fluoropolymers (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof.

[0018] According to certain embodiments, the first ceramic filler precursor component can include a first filler precursor material that can have particular properties that can enhance the performance of the dielectric substrate formed by the forming method 100.

[0019] According to certain embodiments, the first filler precursor material may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler precursor material, is referred to as the particle size distribution D value, D 10 , D 50 and D. 90 Any combination of D from the particle size distribution can be used to describe the 10The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0020] According to a particular embodiment, the first filler precursor material has a particular size distribution D 10 For example, the D of the first filler precursor material may have a value of 10 may be at least about 0.2 micrometers, e.g., at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0021] According to another embodiment, the first filler precursor material has a particular size distribution D 50 For example, the D of the first filler precursor material may have a value of 50may be at least about 0.5 micrometers, such as at least about 0.6, or at least about 0.7, or at least about 0.8, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the first filler material 50 D of the first filler precursor material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0022] According to another embodiment, the first filler precursor material has a particular size distribution D 90 For example, the D of the first filler precursor material may have a value of 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the first filler material 90 may be about 8.0 micrometers or less, for example, about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0023] According to yet another embodiment, the first filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​recited above.

[0024] According to yet another embodiment, the first filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS of the first filler precursor material being (D 90 -D 10 ) / D 50 where D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the first filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above.

[0025] According to yet other embodiments, the first filler precursor material can be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler precursor material can have an average surface area of ​​about 10 m. 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 According to yet another embodiment, the first filler precursor material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.2 m 2 / g. It will be understood that the average surface area of ​​the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0026] According to other embodiments, the first filler precursor material may include a particular material. According to certain embodiments, the first filler precursor material may include a silica-based compound. According to yet other embodiments, the first filler precursor material may be comprised of a silica-based compound. According to other embodiments, the first filler precursor material may include silica. According to yet other embodiments, the first filler precursor material may be comprised of silica.

[0027] According to yet other embodiments, the first forming mixture can include a particular content of a first ceramic filler precursor component. For example, the content of the first ceramic filler precursor component may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the first forming mixture. According to yet other embodiments, the content of the first ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of the first ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the first ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0028] According to yet another embodiment, the first ceramic filler precursor component can include a certain content of the first filler precursor material. For example, the content of the first filler precursor material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the first ceramic filler precursor component. According to yet another embodiment, the content of the first filler precursor material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the first ceramic filler precursor component. It will be understood that the content of the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0029] According to yet other embodiments, the first ceramic filler precursor component may include a second filler precursor material.

[0030] According to yet another embodiment, the second filler precursor material may include a specific material. For example, the second filler precursor material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material may include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0031] According to yet another embodiment, the second filler precursor material may include TiO2 According to yet another embodiment, the second filler precursor material may consist of TiO2.

[0032] According to yet another embodiment, the first ceramic filler precursor component may include a certain content of the second filler precursor material. For example, the content of the second filler precursor material may be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the first ceramic filler precursor component. According to yet another embodiment, the content of the second filler precursor material may be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the first ceramic filler precursor component. It will be understood that the content of the second filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the second filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0033] According to yet other embodiments, the first ceramic filler precursor component can include a particular content of amorphous material. For example, the first ceramic filler precursor component can include at least about 97% amorphous material, such as at least about 98%, or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0034] According to other embodiments, the first resin matrix precursor component may include a particular material. For example, the first resin matrix precursor component may include a perfluoropolymer. According to yet other embodiments, the first resin matrix precursor component may be composed of a perfluoropolymer.

[0035] According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the first resin matrix precursor component can be composed of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0036] According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0037] According to yet other embodiments, the first forming mixture may include a particular content of the first resin matrix precursor component. For example, the content of the first resin matrix precursor component may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to yet other embodiments, the content of the first resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of the first resin matrix precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the first resin matrix precursor component can be within a range between and including any of the minimum and maximum values ​​recited above.

[0038] According to still other embodiments, the first forming mixture may include a specific content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, for example, at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to still other embodiments, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of perfluoropolymer may be any value between and including any of the above minimum values ​​and any of the maximum values. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0039] According to yet another embodiment, the second step 120 can further include combining a second resin matrix precursor component with a second ceramic filler precursor component to form a second forming mixture. The third step 130 can further include forming the second forming mixture into a second filled polymer layer underlying the polyimide layer and providing a second fluoropolymer based adhesive layer underlying the second filled polymer layer.

[0040] According to yet another embodiment, the second fluoropolymer adhesive layer can have a particular average thickness. For example, the second fluoropolymer adhesive layer can be at least about at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet another embodiment, the average thickness of the second fluoropolymer adhesive layer may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the second fluoropolymer adhesive layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the second fluoropolymer based adhesive layer may be within a range between and including any of the minimum and maximum values ​​set forth above.

[0041] According to yet another embodiment, the second fluoropolymer adhesive layer 207 may include a specific material. For example, the second fluoropolymer adhesive layer 207 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the second fluoropolymer adhesive layer 207 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof.

[0042] According to certain embodiments, the second ceramic filler precursor component can include a third filler precursor material that can have particular properties that can improve the performance of the dielectric substrate formed by the forming method 100.

[0043] According to certain embodiments, the third filler precursor material may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a third filler precursor material, is referred to as a particle size distribution D value D 10 , D 50 and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0044] According to a particular embodiment, the third filler precursor material has a particular size distribution D 10 For example, the third filler precursor material may have a D 10 The value may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the third filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D of the third filler precursor material may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0045] According to another embodiment, the third filler precursor material has a particular size distribution D 50 For example, the third filler precursor material may have a D 50may be at least about 0.5 micrometers, such as at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the third filler material 50 D of the third filler precursor material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D of the third filler precursor material may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0046] According to another embodiment, the third filler precursor material has a particular size distribution D 90 For example, the third filler precursor material may have a D 90may be at least about 0.8 micrometers, such as at least about 0.9 micrometers, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the third filler material 90 may be about 8.0 micrometers or less, such as about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0047] According to yet another embodiment, the third filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the third filler precursor material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the third filler precursor material may be any value between and including any of the above values. It will be further understood that the average particle size of the third filler precursor material may be within a range between and including any of the above values.

[0048] According to yet another embodiment, the third filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS of the third filler precursor material being (D 90 -D 10 ) / D 50 where D 90 is the D of the third filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the third filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the third filler precursor material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the third filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the third filler precursor material may be any value between and including any of the above values. It will be further understood that the PSDS of the third filler precursor material may be within a range between and including any of the above values.

[0049] According to yet other embodiments, the third filler precursor material may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler precursor material may have an average surface area of ​​about 7.9 m. 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the third filler precursor material may have an average surface area of ​​at least about 2.4 m / g or less. 2 At least about 1.2 m / g, 2 / g. It will be understood that the average surface area of ​​the third filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the third filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0050] According to other embodiments, the third filler precursor material may include a particular material. According to certain embodiments, the third filler precursor material may include a silica-based compound. According to yet other embodiments, the third filler precursor material may be comprised of a silica-based compound. According to other embodiments, the third filler precursor material may include silica. According to yet other embodiments, the third filler precursor material may be comprised of silica.

[0051] According to yet other embodiments, the second forming mixture can include a particular content of a second ceramic filler precursor component. For example, the content of the second ceramic filler precursor component may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the second forming mixture. According to yet other embodiments, the content of the second ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of the second ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0052] According to yet another embodiment, the second ceramic filler precursor component can include a certain content of the third filler precursor material. For example, the content of the third filler precursor material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the second ceramic filler precursor component. According to yet another embodiment, the content of the third filler precursor material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the second ceramic filler precursor component. It will be appreciated that the content of the third filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the third filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0053] According to yet other embodiments, the second ceramic filler precursor component may include a fourth filler precursor material.

[0054] According to yet another embodiment, the fourth filler precursor material may include a specific material. For example, the fourth filler precursor material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth filler precursor material may include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0055] According to yet another embodiment, the fourth filler precursor material may include TiO2 According to yet another embodiment, the fourth filler precursor material may consist of TiO2.

[0056] According to yet another embodiment, the second ceramic filler precursor component can include a certain content of the fourth filler precursor material. For example, the content of the fourth filler precursor material can be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the second ceramic filler precursor component. According to yet another embodiment, the content of the fourth filler precursor material can be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the second ceramic filler precursor component. It will be appreciated that the content of the fourth filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the fourth filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0057] According to yet other embodiments, the second ceramic filler precursor component can include a particular content of amorphous material. For example, the second ceramic filler precursor component can include at least about 97% amorphous material, such as at least about 98%, or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0058] According to other embodiments, the second resin matrix precursor component may include a particular material. For example, the second resin matrix precursor component may include a perfluoropolymer. According to yet other embodiments, the second resin matrix precursor component may be composed of a perfluoropolymer.

[0059] According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the second resin matrix precursor component can be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0060] According to yet another embodiment, the perfluoropolymer of the second resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet another embodiment, the perfluoropolymer of the second resin matrix precursor component may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0061] According to yet other embodiments, the second forming mixture can include a specific content of the second resin matrix precursor component. For example, the content of the second resin matrix precursor component can be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to yet other embodiments, the content of the second resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of the second resin matrix precursor component can be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second resin matrix precursor component can be within a range between and including any of the minimum and maximum values ​​recited above.

[0062] According to still other embodiments, the second forming mixture may include a specific content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, for example, at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the forming mixture. According to still other embodiments, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of perfluoropolymer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0063] Turning now to embodiments of a dielectric substrate formed according to the forming method 100, Figure 2a includes a diagram of a dielectric substrate 200. As shown in Figure 2a, the dielectric substrate 200 can include a first fluoropolymer based adhesive layer 203, a polyimide layer 202, and a first filled polymer layer 204 overlying the polyimide layer 202. As shown in Figure 2a, the first filled polymer layer 204 can include a first resin matrix component 210 and a first ceramic filler component 220.

[0064] According to yet other embodiments, the first fluoropolymer adhesive layer 203 can have a particular average thickness. For example, the first fluoropolymer adhesive layer 203 can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet other embodiments, the average thickness of the first fluoropolymer adhesive layer 203 may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the first fluoropolymer adhesive layer 203 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the first fluoropolymer based adhesive layer 203 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0065] According to yet another embodiment, the first fluoropolymer adhesive layer 203 may include a specific material. For example, the first fluoropolymer adhesive layer 203 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the first fluoropolymer adhesive layer 203 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof.

[0066] According to certain embodiments, the first ceramic filler component 220 may include a first filler material that may have certain properties that may improve the performance of the dielectric substrate 200 .

[0067] According to certain embodiments, the first filler material of the first ceramic filler component 220 can have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler material, is referred to as a particle size distribution D value, D 10 , D 50 and D. 90 Any combination of D from the particle size distribution can be used to describe the 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0068] According to a particular embodiment, the first filler material of the first ceramic filler component 220 has a particular size distribution D 10 For example, the D of the first filler material may have a value of 10 may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0069] According to another embodiment, the first filler material of the first ceramic filler component 220 has a particular size distribution D 50 For example, the D of the first filler material may have a value of 50may be at least about 0.5 micrometers, such as at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the first filler material 50 D of the first filler material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0070] According to another embodiment, the first filler material of the first ceramic filler component 220 has a particular size distribution D 90 For example, the D of the first filler material may have a value of 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the first filler material 90 may be about 8.0 micrometers or less, for example, about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0071] According to yet another embodiment, the first filler material of the first ceramic filler component 220 may have a particular average particle size as measured by laser diffraction spectroscopy. For example, the average particle size of the first filler material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above.

[0072] According to yet another embodiment, the first filler material of the first ceramic filler component 220 can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the first filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler material may be any value between and including any of the values ​​recited above. It will further be understood that the PSDS of the first filler material may be any value within a range between and including any of the values ​​recited above.

[0073] According to yet other embodiments, the first filler material of the first ceramic filler component 220 may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler material may have an average surface area of ​​about 10 m 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 According to yet another embodiment, the first filler material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.4 m 2 / g. It will be understood that the average surface area of ​​the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0074] According to other embodiments, the first filler material of the first ceramic filler component 220 can include a particular material. According to certain embodiments, the first filler material can include a silica-based compound. According to yet other embodiments, the first filler material can be comprised of a silica-based compound. According to other embodiments, the first filler material can include silica. According to yet other embodiments, the first filler material can be comprised of silica.

[0075] According to yet another embodiment, the first filled polymer layer 204 may include a particular content of the first ceramic filler component 220 . For example, the content of the ceramic filler component 220 may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the first filled polymer layer 204. According to yet other embodiments, the content of the ceramic filler component 220 may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first filled polymer layer 204. It will be understood that the content of the ceramic filler component 220 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the ceramic filler component 220 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0076] According to yet another embodiment, the first ceramic filler component 220 can include a certain content of the first filler material. For example, the content of the first filler material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the first ceramic filler component 220. According to yet another embodiment, the content of the first filler material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the first ceramic filler component 220. It will be appreciated that the content of the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0077] According to yet other embodiments, the first ceramic filler component 220 can include a second filler material.

[0078] According to yet other embodiments, the second filler material of the first ceramic filler component 220 can include certain materials. For example, the second filler material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler material of the first ceramic filler component 220 can include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0079] According to yet another embodiment, the second filler material of the first ceramic filler component 220 can include TiO2. According to yet another embodiment, the second filler material can be composed of TiO2.

[0080] According to yet another embodiment, the first ceramic filler component 220 can include a certain content of the second filler material. For example, the content of the second filler material can be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or even at least about 10 vol.%, based on the total volume of the first ceramic filler component 220. According to yet another embodiment, the content of the second filler material can be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the first ceramic filler component 220. It will be appreciated that the content of the second filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the second filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0081] According to yet other embodiments, the first ceramic filler component 220 can include a particular content of amorphous material. For example, the first ceramic filler component 220 can include at least about 97%, such as at least about 98%, or even at least about 99% amorphous material. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0082] According to other embodiments, the first resin matrix component 210 can include a particular material. For example, the first resin matrix component 210 can include a perfluoropolymer. According to yet other embodiments, the first resin matrix component 210 can be composed of a perfluoropolymer.

[0083] According to yet other embodiments, the perfluoropolymer of the first resin matrix component 210 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the first resin matrix component 210 can be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0084] According to yet other embodiments, the perfluoropolymer of the first resin matrix component 210 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the first resin matrix component 210 can be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0085] According to yet other embodiments, the first filled polymer layer 204 can include a particular content of the first resin matrix component 210. For example, the content of the first resin matrix component 210 can be at least about 45 vol.%, such as at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or at least about 54 vol.%, or even at least about 55 vol.%, based on the total volume of the first filled polymer layer 204. According to yet other embodiments, the content of the first resin matrix component 210 is about 63 vol.% or less, or about 62 vol.% or less, or about 61 vol.% or less, or about 60 vol.% or less, or about 59 vol.% or less, or about 58 vol.% or less, or even about 57 vol.% or less based on the total volume of the first filled polymer layer 204. It will be understood that the content of the first resin matrix component 210 may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the first resin matrix component 210 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0086] According to yet another embodiment, the first filled polymer layer 204 may include a certain content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the first filled polymer layer 204. According to yet another embodiment, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first filled polymer layer 204. It will be understood that the perfluoropolymer content may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0087] According to yet other embodiments, the dielectric substrate 200 may have a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 200 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less. It will be understood that the porosity of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the porosity of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0088] According to yet other embodiments, the dielectric substrate 200 may have a particular average thickness. For example, the average thickness of the dielectric substrate 200 may be at least about 10 micrometers, such as at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers. According to yet other embodiments, the average thickness of the dielectric substrate 200 may be about 2000 micrometers or less, for example, about 1800 micrometers or less, about 1600 micrometers or less, about 1400 micrometers or less, about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less. It will be understood that the average thickness of the dielectric substrate 200 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 200 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0089] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 20% RH. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0090] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 80% RH. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0091] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0092] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0093] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0094] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0095] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 20% RH in the range of 39 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0096] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0097] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 20% RH. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0098] According to yet another embodiment, the dielectric substrate 200 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 80% RH. For example, the dielectric substrate 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 200 may be any value between and including any of the values ​​recited above.

[0099] According to yet another embodiment, the dielectric substrate 200 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA, For example, the dielectric substrate 200 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0100] According to another embodiment of a dielectric substrate formed according to the method 100, Figure 2b includes a diagram of a dielectric substrate 201. As shown in Figure 2b, the dielectric substrate 201 can include a first fluoropolymer based adhesive layer 203, a polyimide layer 202, a first filled polymer layer 204 overlying the polyimide layer 202, a second filled polymer layer 206 overlying the polyimide layer 202, and a second fluoropolymer based adhesive layer 208 overlying the second filled polymer layer 206. As shown in Figure 2b, the second filled polymer layer 206 can include a second resin matrix component 230 and a second ceramic filler component 240.

[0101] According to yet other embodiments, the second fluoropolymer based adhesive layer 208 can have a particular average thickness. For example, the second fluoropolymer based adhesive layer 208 can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet other embodiments, the average thickness of the second fluoropolymer adhesive layer 208 may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the second fluoropolymer adhesive layer 208 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the second fluoropolymer based adhesive layer 208 may be within a range between and including any of the minimum and maximum values ​​listed above.

[0102] According to yet another embodiment, the second fluoropolymer adhesive layer 208 may include a specific material. For example, the second fluoropolymer adhesive layer 208 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the second fluoropolymer adhesive layer 208 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof.

[0103] According to certain embodiments, the second ceramic filler component 240 can include a third filler material that can have certain properties that can improve the performance of the dielectric substrate 201 .

[0104] According to certain embodiments, the third filler material of the second ceramic filler component 240 can have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of the material, e.g., the particle size distribution of the third filler material, is referred to as the particle size distribution D value D 10 , D 50 and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0105] According to a particular embodiment, the third filler material of the second ceramic filler component 240 has a particular size distribution D 10 For example, the third filler material may have a D 10 may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the third filler material 10 D of the third filler material may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0106] According to another embodiment, the third filler material of the second ceramic filler component 240 has a particular size distribution D 50 For example, the third filler material may have a D 50may be at least about 0.5 micrometers, such as at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the third filler material 50 D of the third filler material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0107] According to another embodiment, the third filler material of the second ceramic filler component 240 has a particular size distribution D 90 For example, the third filler material may have a D 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the third filler material 90 may be about 8.0 micrometers or less, such as about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D of the third filler material can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0108] According to yet other embodiments, the third filler material of the second ceramic filler component 240 may have a particular average particle size measured according to laser diffraction spectroscopy. For example, the average particle size of the third filler material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the third filler material may be any value between and including any of the above values. It will be further understood that the average particle size of the third filler material may be within a range between and including any of the above values.

[0109] According to yet another embodiment, the third filler material of the second ceramic filler component 240 can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the third filler material 90 D is equal to the particle size distribution measurement 10 is the D of the third filler material 10 D is equal to the particle size distribution measurement 50 is the D of the third filler material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the third filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the third filler material can be any value between and including any of the above values. It will be further understood that the PSDS of the third filler material can be within a range between and including any of the above values.

[0110] According to yet another embodiment, the third filler material of the second ceramic filler component 240 can be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler material can have an average surface area of ​​about 9.9 m. 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the third filler material may have an average surface area of ​​at least about 2.4 m / g or less. 2 At least about 1.2 m / g, 2 / g. It will be understood that the average surface area of ​​the third filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the third filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0111] According to other embodiments, the third filler material of the second ceramic filler component 240 can include a particular material. According to certain embodiments, the third filler material can include a silica-based compound. According to yet other embodiments, the third filler material can be comprised of a silica-based compound. According to other embodiments, the third filler material can include silica. According to yet other embodiments, the third filler material can be comprised of silica.

[0112] According to yet another embodiment, the first filled polymer layer 204 may include a particular content of the second ceramic filler component 240 . For example, the content of the second ceramic filler component 240 may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or at least about 54 vol.%, based on the total volume of the second ceramic filler component 240. According to yet other embodiments, the content of the second ceramic filler component 240 may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first filled polymer layer 204. It will be appreciated that the content of the ceramic filler component 220 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further appreciated that the content of the ceramic filler component 220 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0113] According to yet another embodiment, the second ceramic filler component 240 can include a certain content of the third filler material. For example, the content of the third filler material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the second ceramic filler component 240. According to yet another embodiment, the content of the third filler material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the second ceramic filler component 240. It will be appreciated that the content of the third filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the third filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0114] According to yet other embodiments, the second ceramic filler component 240 can include a fourth filler material.

[0115] According to yet other embodiments, the fourth filler material of the second ceramic filler component 240 can include a specific material. For example, the fourth filler material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the fourth filler material of the second ceramic filler component 240 can include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0116] According to yet another embodiment, the fourth filler material of the second ceramic filler component 240 can include TiO2. According to yet another embodiment, the fourth filler material can be composed of TiO2.

[0117] According to yet another embodiment, the second ceramic filler component 240 can include a certain content of the fourth filler material. For example, the content of the fourth filler material can be at least about 1 vol.%, for example, at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or even at least about 10 vol.%, based on the total volume of the second ceramic filler component 240. According to yet another embodiment, the content of the fourth filler material can be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the second ceramic filler component 240. It will be appreciated that the content of the fourth filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the fourth filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0118] According to yet other embodiments, the second ceramic filler component 240 can include a particular content of amorphous material. For example, the second ceramic filler component 240 can include at least about 97%, such as at least about 98%, or even at least about 99% amorphous material. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0119] According to yet other embodiments, the second resin matrix component 230 can include a specific material. For example, the second resin matrix component 230 can include a perfluoropolymer. According to yet other embodiments, the second resin matrix component 230 can be composed of a perfluoropolymer.

[0120] According to yet other embodiments, the perfluoropolymer of the second resin matrix component 230 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 230 can be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0121] According to yet other embodiments, the perfluoropolymer of the second resin matrix component 230 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the second resin matrix component 230 can be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0122] According to yet other embodiments, the second filled polymer layer 206 can include a particular content of the second resin matrix component 230. For example, the content of the second resin matrix component 230 can be at least about 45 vol%, such as at least about 46 vol%, or at least about 47 vol%, or at least about 48 vol%, or at least about 49 vol%, or at least about 50 vol%, or at least about 51 vol%, or at least about 52 vol%, or at least about 53 vol%, or at least about 54 vol%, or even at least about 55 vol%, based on the total volume of the second filled polymer layer 206. According to yet other embodiments, the content of the second resin matrix component 230 is about 63 vol% or less, or about 62 vol% or less, or about 61 vol% or less, or about 60 vol% or less, or about 59 vol% or less, or about 58 vol% or less, or even about 57 vol% or less based on the total volume of the second filled polymer layer 206. It will be appreciated that the content of the second resin matrix component 230 may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the second resin matrix component 230 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0123] According to yet another embodiment, the second filled polymer layer 206 may include a certain content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the second filled polymer layer 206. According to yet another embodiment, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the second filled polymer layer 206. It will be understood that the perfluoropolymer content may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0124] According to yet other embodiments, the dielectric substrate 201 may have a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 200 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less. It will be understood that the porosity of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the porosity of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0125] According to yet other embodiments, the dielectric substrate 201 may have a particular average thickness. For example, the average thickness of the dielectric substrate 201 may be at least about 10 micrometers, such as at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers. According to yet other embodiments, the average thickness of the dielectric substrate 201 may be about 2000 micrometers or less, for example, about 1800 micrometers or less, about 1600 micrometers or less, about 1400 micrometers or less, about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less. It will be understood that the average thickness of the dielectric substrate 201 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 201 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0126] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0127] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0128] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0129] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0130] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0131] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0132] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0133] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0134] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0135] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above.

[0136] According to yet another embodiment, the dielectric substrate 201 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA, for example, the dielectric substrate 201 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0137] It will be understood that the filled polymer layer described with reference to the embodiments of the dielectric substrate disclosed herein may be in direct contact with the polyimide layer, or there may be additional layers between the filled polymer layer and the polyimide layer, for example, a fluoropolymer layer (filled or unfilled) may be disposed between the polyimide layer and the filled polymer layer of the dielectric substrate.

[0138] Reference is now made to an embodiment of a copper clad laminate that may include the dielectric substrate described herein. Such additional embodiments described herein generally relate to a copper clad laminate that may include a copper foil layer and a dielectric substrate covering the copper foil layer. According to a particular embodiment, the dielectric substrate may include a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer, and the first filled polymer layer may include a first resin matrix component and a first ceramic filler component.

[0139] Turning now to a method of forming a copper clad laminate, Figure 3 includes a diagram illustrating a forming method 300 for forming a copper clad laminate according to embodiments described herein. According to certain embodiments, the forming method 300 can include a first step 310 of providing a copper foil layer and a second step 320 of forming a dielectric substrate overlying the copper foil layer. According to certain embodiments, forming the dielectric layer can include providing a first fluoropolymer-based adhesive layer, providing a polyimide layer overlying the first fluoropolymer-based adhesive layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer overlying the polyimide layer.

[0140] According to certain embodiments, the first ceramic filler precursor component can include a first filler precursor material that can have particular properties that can improve the performance of the copper clad laminate formed by the forming method 300.

[0141] According to yet another embodiment, the first fluoropolymer adhesive layer can have a particular average thickness. For example, the first fluoropolymer adhesive layer can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet another embodiment, the average thickness of the first fluoropolymer adhesive layer may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the first fluoropolymer adhesive layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the first fluoropolymer based adhesive layer may be within a range between and including any of the minimum and maximum values ​​listed above.

[0142] According to yet another embodiment, the first fluoropolymer adhesive layer 207 may include a specific material. For example, the first fluoropolymer adhesive layer 207 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the first fluoropolymer adhesive layer 207 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof.

[0143] According to certain embodiments, the first filler precursor material may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler precursor material, is referred to as the particle size distribution D value, D 10 , D 50 and D. 90 Any combination of D from the particle size distribution can be used to describe the 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0144] According to a particular embodiment, the first filler precursor material has a particular size distribution D10 For example, the D of the first filler precursor material may have a value of 10 may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0145] According to another embodiment, the first filler precursor material has a particular size distribution D 50 For example, the D of the first filler precursor material may have a value of 50may be at least about 0.5 micrometers, such as at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the first filler material 50 D of the first filler precursor material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0146] According to another embodiment, the first filler precursor material has a particular size distribution D 90 For example, the D of the first filler precursor material may have a value of 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the first filler material 90 may be about 8.0 micrometers or less, for example, about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0147] According to yet another embodiment, the first filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​recited above.

[0148] According to yet another embodiment, the first filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS of the first filler precursor material being (D 90 -D 10 ) / D 50 where D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the first filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above.

[0149] According to yet other embodiments, the first filler precursor material can be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler precursor material can have an average surface area of ​​about 9.9 m. 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the first filler precursor material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.4 m 2 / g. It will be understood that the average surface area of ​​the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0150] According to other embodiments, the first filler precursor material may include a particular material. According to certain embodiments, the first filler precursor material may include a silica-based compound. According to yet other embodiments, the first filler precursor material may be comprised of a silica-based compound. According to other embodiments, the first filler precursor material may include silica. According to yet other embodiments, the first filler precursor material may be comprised of silica.

[0151] According to yet other embodiments, the first forming mixture can include a particular content of a first ceramic filler precursor component. For example, the content of the first ceramic filler precursor component may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the first forming mixture. According to yet other embodiments, the content of the first ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of the first ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the first ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0152] According to yet another embodiment, the first ceramic filler precursor component can include a certain content of the first filler precursor material. For example, the content of the first filler precursor material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the first ceramic filler precursor component. According to yet another embodiment, the content of the first filler precursor material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the first ceramic filler precursor component. It will be understood that the content of the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0153] According to yet other embodiments, the first ceramic filler precursor component may include a second filler precursor material.

[0154] According to yet another embodiment, the second filler precursor material may include a specific material. For example, the second filler precursor material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material may include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0155] According to yet another embodiment, the second filler precursor material may include TiO2 According to yet another embodiment, the second filler precursor material may consist of TiO2.

[0156] According to yet another embodiment, the first ceramic filler precursor component may include a certain content of the second filler precursor material. For example, the content of the second filler precursor material may be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the first ceramic filler precursor component. According to yet another embodiment, the content of the second filler precursor material may be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the first ceramic filler precursor component. It will be understood that the content of the second filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the second filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0157] According to yet other embodiments, the first ceramic filler precursor component can include a particular content of amorphous material. For example, the first ceramic filler precursor component can include at least about 97% amorphous material, such as at least about 98%, or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0158] According to other embodiments, the first resin matrix precursor component may include a particular material. For example, the first resin matrix precursor component may include a perfluoropolymer. According to yet other embodiments, the first resin matrix precursor component may be composed of a perfluoropolymer.

[0159] According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the first resin matrix precursor component can be composed of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0160] According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet another embodiment, the perfluoropolymer of the first resin matrix precursor component may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0161] According to yet other embodiments, the first forming mixture may include a particular content of the first resin matrix precursor component. For example, the content of the first resin matrix precursor component may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the first forming mixture. According to yet other embodiments, the content of the first resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of the first resin matrix precursor component can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the content of the first resin matrix precursor component can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0162] According to yet another embodiment, the first forming mixture may include a specific content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the first forming mixture. According to yet another embodiment, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of perfluoropolymer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0163] According to yet another embodiment, forming the dielectric substrate can further include combining a second resin matrix precursor component and a second ceramic filler precursor component to form a second forming mixture, forming the second forming mixture into a second filled polymer layer underlying the polyimide layer, and providing a second fluoropolymer based adhesive layer underlying the second filled polymer layer.

[0164] According to yet another embodiment, the second fluoropolymer adhesive layer can have a particular average thickness. For example, the second fluoropolymer adhesive layer can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet another embodiment, the average thickness of the second fluoropolymer adhesive layer may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the second fluoropolymer adhesive layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the second fluoropolymer based adhesive layer may be within a range between and including any of the minimum and maximum values ​​set forth above.

[0165] According to yet another embodiment, the second fluoropolymer adhesive layer 207 may include a specific material. For example, the second fluoropolymer adhesive layer 207 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the second fluoropolymer adhesive layer 207 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof.

[0166] According to certain embodiments, the second ceramic filler precursor component can include a third filler precursor material that can have particular properties that can improve the performance of the copper clad laminate formed by the forming method 300.

[0167] According to certain embodiments, the third filler precursor material may have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a third filler precursor material, is referred to as a particle size distribution D value D 10 , D 50 and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0168] According to a particular embodiment, the third filler precursor material has a particular size distribution D 10 For example, the third filler precursor material may have a D 10 The value may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the third filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D of the third filler precursor material may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0169] According to another embodiment, the third filler precursor material has a particular size distribution D 50 For example, the third filler precursor material may have a D 50may be at least about 0.5 micrometers, such as at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the third filler material 50 D of the third filler precursor material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D of the third filler precursor material may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0170] According to another embodiment, the third filler precursor material has a particular size distribution D 90 For example, the third filler precursor material may have a D 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the third filler material 90 may be about 8.0 micrometers or less, such as about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0171] According to yet another embodiment, the third filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the third filler precursor material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the third filler precursor material may be any value between and including any of the above values. It will be further understood that the average particle size of the third filler precursor material may be within a range between and including any of the above values.

[0172] According to yet another embodiment, the third filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS of the third filler precursor material being (D 90 -D 10 ) / D 50 where D 90 is the D of the third filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the third filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the third filler precursor material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the third filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the third filler precursor material may be any value between and including any of the above values. It will be further understood that the PSDS of the third filler precursor material may be within a range between and including any of the above values.

[0173] According to yet other embodiments, the third filler precursor material may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler precursor material may have an average surface area of ​​about 9.9 m. 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the third filler precursor material may have an average surface area of ​​at least about 2.4 m / g or less. 2 At least about 1.2 m / g, 2 / g. It will be understood that the average surface area of ​​the third filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the third filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0174] According to other embodiments, the third filler precursor material may include a particular material. According to certain embodiments, the third filler precursor material may include a silica-based compound. According to yet other embodiments, the third filler precursor material may be comprised of a silica-based compound. According to other embodiments, the third filler precursor material may include silica. According to yet other embodiments, the third filler precursor material may be comprised of silica.

[0175] According to yet other embodiments, the second forming mixture can include a particular content of a second ceramic filler precursor component. For example, the content of the second ceramic filler precursor component may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the second forming mixture. According to yet other embodiments, the content of the second ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of the second ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0176] According to yet another embodiment, the second ceramic filler precursor component can include a certain content of the third filler precursor material. For example, the content of the third filler precursor material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the second ceramic filler precursor component. According to yet another embodiment, the content of the third filler precursor material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the second ceramic filler precursor component. It will be appreciated that the content of the third filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the third filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0177] According to yet other embodiments, the second ceramic filler precursor component may include a fourth filler precursor material.

[0178] According to yet another embodiment, the fourth filler precursor material may include a specific material. For example, the fourth filler precursor material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth filler precursor material may include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0179] According to yet another embodiment, the fourth filler precursor material may include TiO2 According to yet another embodiment, the fourth filler precursor material may consist of TiO2.

[0180] According to yet another embodiment, the second ceramic filler precursor component can include a certain content of the fourth filler precursor material. For example, the content of the fourth filler precursor material can be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the second ceramic filler precursor component. According to yet another embodiment, the content of the fourth filler precursor material can be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the second ceramic filler precursor component. It will be appreciated that the content of the fourth filler precursor material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the fourth filler precursor material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0181] According to yet other embodiments, the second ceramic filler precursor component can include a particular content of amorphous material. For example, the second ceramic filler precursor component can include at least about 97% amorphous material, such as at least about 98%, or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0182] According to other embodiments, the second resin matrix precursor component may include a particular material. For example, the second resin matrix precursor component may include a perfluoropolymer. According to yet other embodiments, the second resin matrix precursor component may be composed of a perfluoropolymer.

[0183] According to yet another embodiment, the perfluoropolymer of the first resin precursor matrix component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of a polymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the second resin matrix precursor component can be composed of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0184] According to yet another embodiment, the perfluoropolymer of the second resin matrix precursor component may comprise polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet another embodiment, the perfluoropolymer of the second resin matrix precursor component may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0185] According to yet other embodiments, the second forming mixture can include a specific content of the second resin matrix precursor component. For example, the content of the second resin matrix precursor component can be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the second forming mixture. According to yet other embodiments, the content of the second resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of the second resin matrix precursor component can be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second resin matrix precursor component can be within a range between and including any of the minimum and maximum values ​​recited above.

[0186] According to still other embodiments, the second forming mixture may include a specific content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, based on the total volume of the second forming mixture. According to still other embodiments, the content of perfluoropolymer may be about 63% by volume or less, such as about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the second forming mixture. It will be understood that the content of perfluoropolymer may be any value between and including any of the above minimum values ​​and any of the maximum values. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0187] Turning now to an embodiment of a copper clad laminate formed according to the forming method 300, FIG. 4a includes a diagram of a copper clad laminate 400. As shown in FIG. 4a, the copper clad laminate 400 can include a copper foil layer 401 and a dielectric substrate 405 overlying the surface of the copper foil layer 401. As further shown in FIG. 4a, the dielectric substrate 405 can include a first fluoropolymer based adhesive layer 403, a polyimide layer 402, and a first filled polymer layer 404 overlying the polyimide layer 402. As shown in FIG. 4a, the first filled polymer layer 404 can include a first resin matrix component 410 and a first ceramic filler component 420.

[0188] According to yet other embodiments, the first fluoropolymer adhesive layer 403 can have a particular average thickness. For example, the first fluoropolymer adhesive layer 403 can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet other embodiments, the average thickness of the first fluoropolymer adhesive layer 403 may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the first fluoropolymer adhesive layer 403 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the first fluoropolymer based adhesive layer 403 may be within a range between and including any of the minimum and maximum values ​​listed above.

[0189] According to yet another embodiment, the first fluoropolymer adhesive layer 403 may include a specific material. For example, the first fluoropolymer adhesive layer 403 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the first fluoropolymer adhesive layer 403 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxy polymer resin (mPFA), as well as derivatives and blends thereof.

[0190] According to certain embodiments, the first ceramic filler component 420 can include a first filler material that can have certain properties that can improve the performance of the dielectric substrate 405 .

[0191] According to certain embodiments, the first filler material of the first ceramic filler component 420 can have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler material, is referred to as a particle size distribution D value, D 10 , D 50 and D. 90 Any combination of D from the particle size distribution can be used to describe the 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0192] According to a particular embodiment, the first filler material of the first ceramic filler component 420 has a particular size distribution D 10 For example, the D of the first filler material may have a value of 10 may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0193] According to another embodiment, the first filler material of the first ceramic filler component 420 has a particular size distribution D 50 For example, the D of the first filler material may have a value of 50may be at least about 0.8 micrometers, e.g., at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the first filler material 50 D of the first filler material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0194] According to another embodiment, the first filler material of the first ceramic filler component 420 has a particular size distribution D 90 For example, the D of the first filler material may have a value of 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the first filler material 90 may be about 8.0 micrometers or less, for example, about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0195] According to yet other embodiments, the first filler material of the first ceramic filler component 420 may have a particular average particle size as measured by laser diffraction spectroscopy. For example, the average particle size of the first filler material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above.

[0196] According to yet another embodiment, the first filler material of the first ceramic filler component 420 can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the first filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the first filler material may be any value between and including any of the values ​​recited above. It will further be understood that the PSDS of the first filler material may be any value within a range between and including any of the values ​​recited above.

[0197] According to yet another embodiment, the first filler material of the first ceramic filler component 420 may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler material may have an average surface area of ​​about 9.9 m. 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the first filler material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.4 m 2 / g. It will be understood that the average surface area of ​​the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0198] According to other embodiments, the first filler material of the first ceramic filler component 420 can include a particular material. According to certain embodiments, the first filler material can include a silica-based compound. According to yet other embodiments, the first filler material can be comprised of a silica-based compound. According to other embodiments, the first filler material can include silica. According to yet other embodiments, the first filler material can be comprised of silica.

[0199] According to yet another embodiment, the first filled polymer layer 404 may include a particular content of the first ceramic filler component 420. For example, the content of the first ceramic filler component 420 may be at least about 50 vol.%, such as at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, based on the total volume of the first filled polymer layer 404. According to yet another embodiment, the content of the ceramic filler component 220 may be about 57 vol.% or less, such as about 56 vol.% or less, or even about 55 vol.% or less, based on the total volume of the first filled polymer layer 404. It will be understood that the content of the first ceramic filler component 420 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the first ceramic filler component 420 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0200] According to yet other embodiments, the first ceramic filler component 420 can include a particular content of the first filler material. For example, the content of the first filler material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the first ceramic filler component 420. According to yet other embodiments, the content of the first filler material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the first ceramic filler component 420. It will be appreciated that the content of the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0201] According to yet other embodiments, the first ceramic filler component 420 can include a second filler material.

[0202] According to yet other embodiments, the second filler material of the first ceramic filler component 420 can include certain materials. For example, the second filler material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler material of the first ceramic filler component 420 can include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0203] According to yet another embodiment, the second filler material of the first ceramic filler component 420 can include TiO2. According to yet another embodiment, the second filler material can be composed of TiO2.

[0204] According to yet other embodiments, the first ceramic filler component 420 can include a certain content of the second filler material. For example, the content of the second filler material may be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the first ceramic filler component 420. According to yet other embodiments, the content of the second filler material may be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the first ceramic filler component 420. It will be appreciated that the content of the second filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the second filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0205] According to yet other embodiments, the first ceramic filler component 420 can include a particular content of amorphous material. For example, the first ceramic filler component 420 can include at least about 97% amorphous material, such as at least about 98% or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0206] According to other embodiments, the first resin matrix component 410 can include a particular material. For example, the first resin matrix component 410 can include a perfluoropolymer. According to yet other embodiments, the first resin matrix component 410 can be composed of a perfluoropolymer.

[0207] According to yet other embodiments, the perfluoropolymer of the first resin matrix component 410 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the first resin matrix component 410 can be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0208] According to yet other embodiments, the perfluoropolymer of the first resin matrix component 410 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the first resin matrix component 410 can be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0209] According to yet other embodiments, the first filled polymer layer 404 can include a particular content of the first resin matrix component 410. For example, the content of the first resin matrix component 410 can be at least about 45 vol%, such as at least about 46 vol%, or at least about 47 vol%, or at least about 48 vol%, or at least about 49 vol%, or at least about 50 vol%, or at least about 51 vol%, or at least about 52 vol%, or at least about 53 vol%, or at least about 54 vol%, or even at least about 55 vol%, based on the total volume of the first filled polymer layer 404. According to yet other embodiments, the content of the first resin matrix component 410 is about 63 vol% or less, or about 62 vol% or less, or about 61 vol% or less, or about 60 vol% or less, or about 59 vol% or less, or about 58 vol% or less, or even about 57 vol% or less based on the total volume of the first filled polymer layer 404. It will be appreciated that the content of the first resin matrix component 410 can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the first resin matrix component 410 can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0210] According to yet other embodiments, the first filled polymer layer 404 may include a particular content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45 vol%, such as at least about 46 vol%, or at least about 47 vol%, or at least about 48 vol%, or at least about 49 vol%, or at least about 50 vol%, or at least about 51 vol%, or at least about 52 vol%, or at least about 53 vol%, or at least about 54 vol%, or even at least about 55 vol%, based on the total volume of the first filled polymer layer 404. According to yet other embodiments, the content of perfluoropolymer may be about 63 vol% or less, such as about 62 vol% or less, or about 61 vol% or less, or about 60 vol% or less, or about 59 vol% or less, or about 58 vol% or less, or even about 57 vol% or less, based on the total volume of the first filled polymer layer 404. It will be understood that the perfluoropolymer content may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0211] According to yet other embodiments, the dielectric substrate 405 may have a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 405 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less. It will be appreciated that the porosity of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the porosity of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0212] According to yet other embodiments, the dielectric substrate 405 may have a particular average thickness. For example, the average thickness of the dielectric substrate 405 may be at least about 10 micrometers, such as at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers. According to yet other embodiments, the average thickness of the dielectric substrate 405 may be about 2000 micrometers or less, for example, about 1800 micrometers or less, about 1600 micrometers or less, about 1400 micrometers or less, about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less. It will be understood that the average thickness of the dielectric substrate 405 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 405 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0213] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0214] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0215] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0216] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0217] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0218] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0219] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0220] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0221] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0222] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0223] According to yet another embodiment, the dielectric substrate 405 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA, For example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0224] According to another embodiment of a copper clad laminate formed according to the forming method 300, FIG. 4b includes a diagram of a copper clad laminate 401. As shown in FIG. 4b, the copper clad laminate 400b can include a copper foil layer 401 and a dielectric substrate 405 covering a surface of the copper foil layer 401. As shown in FIG. 4b, the dielectric substrate 405 can include a first fluoropolymer-based adhesive layer 403, a polyimide layer 402, a first filled polymer layer 404 covering the top of the polyimide layer 402, a second filled polymer layer 406 covering the bottom of the polyimide layer 402, and a second fluoropolymer-based adhesive layer 408 covering the bottom of the second filled polymer layer 406. As shown in FIG. 4b, the second filled polymer layer 406 can include a second resin matrix component 430 and a second ceramic filler component 440.

[0225] According to yet other embodiments, the second fluoropolymer based adhesive layer 408 can have a particular average thickness. For example, the second fluoropolymer based adhesive layer 408 can be at least about 0.2 micrometers, such as at least about 0.5 micrometers, or at least about 1.0 micrometers, or at least about 1.5 micrometers, or at least about 2.0 micrometers, or at least about 2.5 micrometers, or even at least about 3.0 micrometers. According to yet other embodiments, the average thickness of the second fluoropolymer adhesive layer 408 may be about 7 micrometers or less, for example, about 6.5 or less, or about 6.0 or less, or about 5.5 or less, or about 5.0 or less, about 4.9 micrometers or less, or about 4.8 micrometers or less, or about 4.7 micrometers or less, or about 4.6 micrometers or less, or about 4.5 micrometers or less, or about 4.4 micrometers or less, or about 4.3 micrometers or less, or about 4.2 micrometers or less, or about 4.1 micrometers or less, or about 4.1 micrometers or less, or about 4.0 micrometers or less, or about 3.9 micrometers or less, or about 3.8 micrometers or less, or about 3.7 micrometers or less, or about 3.6 micrometers or less, or even about 3.5 micrometers or less. It will be understood that the average thickness of the second fluoropolymer adhesive layer 408 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the second fluoropolymer based adhesive layer 408 may be within a range between and including any of the minimum and maximum values ​​listed above.

[0226] According to yet another embodiment, the second fluoropolymer adhesive layer 408 may include a specific material. For example, the second fluoropolymer adhesive layer 408 may include a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof. According to yet another embodiment, the second fluoropolymer adhesive layer 408 may be composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), as well as derivatives and blends thereof.

[0227] According to certain embodiments, the second ceramic filler component 440 can include a third filler material that can have certain properties that can improve the performance of the dielectric substrate 405 .

[0228] According to certain embodiments, the third filler material of the second ceramic filler component 440 can have a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of the material, e.g., the particle size distribution of the third filler material, is referred to as the particle size distribution D value D 10 , D 50 and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0229] According to a particular embodiment, the third filler material of the second ceramic filler component 440 has a particular size distribution D 10 For example, the third filler material may have a D 10 may be at least about 0.2 micrometers, such as at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers. According to yet other embodiments, the D of the third filler material 10 D of the third filler material may be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0230] According to another embodiment, the third filler material of the second ceramic filler component 440 has a particular size distribution D 50 For example, the third filler material may have a D 50may be at least about 0.8 micrometers, e.g., at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or at least about 1.5 micrometers, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or even at least about 2.2 micrometers. According to yet other embodiments, the D of the third filler material 50 D of the third filler material may be about 2.7 micrometers or less, such as about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0231] According to another embodiment, the third filler material of the second ceramic filler component 440 has a particular size distribution D 90 For example, the third filler material may have a D 90may be at least about 0.8 micrometers, such as at least about 0.9, or at least about 1.0, or at least about 1.1, or at least about 1.2, or at least about 1.3, or at least about 1.4, or at least about 1.5, or at least about 1.6 micrometers, or at least about 1.7 micrometers, or at least about 1.8 micrometers, or at least about 1.9 micrometers, or at least about 2.0 micrometers, or at least about 2.1 micrometers, or at least about 2.2 micrometers, or at least about 2.3 micrometers, or at least about 2.4 micrometers, or at least about 2.5 micrometers, or at least about 2.6 micrometers, or even at least about 2.7 micrometers. According to yet other embodiments, the D of the third filler material 90 may be about 8.0 micrometers or less, such as about 7.5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less. 90 It will be understood that D of the third filler material can be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0232] According to yet other embodiments, the third filler material of the second ceramic filler component 440 may have a particular average particle size measured according to laser diffraction spectroscopy. For example, the average particle size of the third filler material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the third filler material may be any value between and including any of the above values. It will be further understood that the average particle size of the third filler material may be within a range between and including any of the above values.

[0233] According to yet another embodiment, the third filler material of the second ceramic filler component 440 can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the third filler material 90 D is equal to the particle size distribution measurement 10 is the D of the third filler material 10 D is equal to the particle size distribution measurement 50 is the D of the third filler material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the third filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the third filler material can be any value between and including any of the above values. It will be further understood that the PSDS of the third filler material can be within a range between and including any of the above values.

[0234] According to yet another embodiment, the third filler material of the second ceramic filler component 440 can be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler material can have an average surface area of ​​about 9.9 m. 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10m 2 According to yet another embodiment, the third filler material may have an average surface area of ​​at least about 2.4 m / g or less. 2 At least about 1.2 m / g, 2 / g. It will be understood that the average surface area of ​​the third filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the average surface area of ​​the third filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0235] According to other embodiments, the third filler material of the second ceramic filler component 440 can include a particular material. According to certain embodiments, the third filler material can include a silica-based compound. According to yet other embodiments, the third filler material can be comprised of a silica-based compound. According to other embodiments, the third filler material can include silica. According to yet other embodiments, the third filler material can be comprised of silica.

[0236] According to yet another embodiment, the first filled polymer layer 404 can include a particular content of the second ceramic filler component 440 . For example, the content of the second ceramic filler component 440 may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or even at least about 54 vol.%, relative to the total volume of the first filled polymer layer 404. According to yet other embodiments, the content of the second ceramic filler component 440 may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first filled polymer layer 404. It will be appreciated that the content of the ceramic filler component 220 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further appreciated that the content of the ceramic filler component 220 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0237] According to yet other embodiments, the second ceramic filler component 440 can include a certain content of the third filler material. For example, the content of the third filler material can be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or even at least about 90 vol.%, based on the total volume of the second ceramic filler component 440. According to yet other embodiments, the content of the third filler material can be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or even about 92 vol.% or less, based on the total volume of the second ceramic filler component 440. It will be appreciated that the content of the third filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the third filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0238] According to yet other embodiments, the second ceramic filler component 440 can include a fourth filler material.

[0239] According to yet other embodiments, the fourth filler material of the second ceramic filler component 440 can include a specific material. For example, the fourth filler material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the fourth filler material of the second ceramic filler component 440 can include any high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0240] According to yet another embodiment, the fourth filler material of the second ceramic filler component 440 can include TiO2. According to yet another embodiment, the fourth filler material can be composed of TiO2.

[0241] According to yet another embodiment, the second ceramic filler component 440 can include a certain content of the fourth filler material. For example, the content of the fourth filler material can be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the second ceramic filler component 440. According to yet another embodiment, the content of the fourth filler material can be about 20 vol.% or less, for example, about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the second ceramic filler component 440. It will be appreciated that the content of the fourth filler material can be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the fourth filler material can be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0242] According to yet other embodiments, the second ceramic filler component 440 can include a particular content of amorphous material. For example, the second ceramic filler component 440 can include at least about 97% amorphous material, such as at least about 98% or even at least about 99%. It will be understood that the content of amorphous material can be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material can be any value between and including any of the values ​​recited above.

[0243] According to yet other embodiments, the second resin matrix component 430 can include a specific material. For example, the second resin matrix component 430 can include a perfluoropolymer. According to yet other embodiments, the second resin matrix component 430 can be composed of a perfluoropolymer.

[0244] According to yet other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 can be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0245] According to yet other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the second resin matrix component 430 can be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0246] According to yet other embodiments, the first filled polymer layer 404 may include a particular content of the second resin matrix component 430 . For example, the content of the second resin matrix component 430 may be at least about 30 vol.%, such as at least about 31 vol.%, or at least about 32 vol.%, or at least about 33 vol.%, or at least about 34 vol.%, or at least about 35 vol.%, or at least about 36 vol.%, or at least about 37 vol.%, or at least about 38 vol.%, or at least about 39 vol.%, or at least about 40 vol.%, or at least about 41 vol.%, or at least about 42 vol.%, or at least about 43 vol.%, or at least about 44 vol.%, or at least about 45 vol.%, or at least about 46 vol.%, or at least about 47 vol.%, or at least about 48 vol.%, or at least about 49 vol.%, or at least about 50 vol.%, or at least about 51 vol.%, or at least about 52 vol.%, or at least about 53 vol.%, or at least about 54 vol.%, or even at least about 55 vol.%, relative to the total volume of the first filled polymer layer 404. According to yet other embodiments, the content of the first resin matrix component 410 is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, based on the total volume of the first filled polymer layer 404. It will be understood that the content of the second resin matrix component 430 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second resin matrix component 430 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0247] According to yet other embodiments, the second filled polymer layer 406 may include a particular content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45 vol%, such as at least about 46 vol%, or at least about 47 vol%, or at least about 48 vol%, or at least about 49 vol%, or at least about 50 vol%, or at least about 51 vol%, or at least about 52 vol%, or at least about 53 vol%, or at least about 54 vol%, or even at least about 55 vol%, based on the total volume of the second filled polymer layer 406. According to yet other embodiments, the content of perfluoropolymer may be about 63 vol% or less, such as about 62 vol% or less, or about 61 vol% or less, or about 60 vol% or less, or about 59 vol% or less, or about 58 vol% or less, or even about 57 vol% or less, based on the total volume of the second filled polymer layer 406. It will be understood that the perfluoropolymer content may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0248] According to yet other embodiments, the dielectric substrate 405 may have a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 200 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less. It will be appreciated that the porosity of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the porosity of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0249] According to yet other embodiments, the dielectric substrate 405 may have a particular average thickness. For example, the average thickness of the dielectric substrate 405 may be at least about 10 micrometers, such as at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers. According to yet other embodiments, the average thickness of the dielectric substrate 405 may be about 2000 micrometers or less, for example, about 1800 micrometers or less, about 1600 micrometers or less, about 1400 micrometers or less, about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less. It will be understood that the average thickness of the dielectric substrate 405 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 405 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0250] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0251] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 5 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0252] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0253] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0254] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0255] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0256] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0257] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 39 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0258] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0259] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76-81 GHz at 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above.

[0260] According to yet another embodiment, the dielectric substrate 405 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA, For example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0261] Turning now to a method of forming a printed circuit board, Figure 5 includes a diagram illustrating a forming method 500 for forming a printed circuit board according to embodiments described herein. According to certain embodiments, the forming method 500 may include a first step 510 of providing a copper foil layer and a second step 520 of forming a dielectric substrate overlying the copper foil layer. According to certain embodiments, the step of forming the dielectric substrate may include combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer overlying a polyimide layer to form the dielectric substrate.

[0262] It will be understood that all descriptions, details, and features provided herein with reference to formation method 100 and / or formation method 300 may also apply to or describe corresponding aspects of formation method 500.

[0263] Turning now to an embodiment of a printed circuit board formed according to the forming method 500, Figure 6a includes an illustration of a printed circuit board 600. As shown in Figure 6a, the printed circuit board 600 can include a copper foil layer 601 and a dielectric substrate 605 overlying a surface of the copper foil layer 601. As further shown in Figure 6a, the dielectric substrate 605 can include a polyimide layer 602 and a first filled polymer layer 604 overlying the polyimide layer 602. As shown in Figure 6a, the first filled polymer layer 604 can include a first resin matrix component 610 and a first ceramic filler component 620.

[0264] Again, it will be understood that all descriptions provided herein with respect to dielectric substrate 200 (405) and / or copper clad laminate 400 are further applicable to modified versions of printed circuit board 600, including all components of printed circuit board 600.

[0265] According to another embodiment of a printed circuit board formed according to the forming method 500, FIG. 6b includes a diagram of a printed circuit board 600b. As shown in FIG. 6b, the printed circuit board 600b can include a copper foil layer 601 and a dielectric substrate 605 covering a surface of the copper foil layer 601. As shown in FIG. 6b, the dielectric substrate 605 can include a polyimide layer 602, a first filled polymer layer 604 covering the top of the polyimide layer 602, and a second filled polymer layer 606 covering the bottom of the polyimide layer 602. As shown in FIG. 6b, the second filled polymer layer 606 can include a second resin matrix component 630 and a second ceramic filler component 640.

[0266] Again, it will be understood that all descriptions provided herein with respect to dielectric substrate 200 (405) and / or copper clad laminate 400 are further applicable to modified versions of printed circuit board 600b, including all components of printed circuit board 600b.

[0267] Many different aspects and embodiments are possible. Some of these aspects and embodiments are described herein. After reading this specification, a person skilled in the art will understand that these aspects and embodiments are merely exemplary and do not limit the scope of the present invention. The embodiment can be according to any one or more of the embodiments listed below.

[0268] Embodiment 1. A dielectric substrate comprising a first fluoropolymer based adhesive layer, a polyimide layer overlying the fluoropolymer based adhesive layer, and a first filled polymer layer overlying the polyimide layer, the first filled polymer layer comprising a first resin matrix component and a first ceramic filler component, the first ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 micrometers or less.

[0269] Embodiment 2. The dielectric substrate of embodiment 1, wherein the first fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0270] Embodiment 3. The dielectric substrate of embodiment 1, wherein the first fluoropolymer-based adhesive layer has an average thickness of about 7 micrometers or less.

[0271] Embodiment 4. The dielectric substrate of embodiment 1, wherein the first fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0272] Embodiment 5. The dielectric substrate of embodiment 1, wherein the first fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0273] Embodiment 6. The dielectric substrate of embodiment 1, wherein the first fluoropolymer adhesive layer is a PFA layer.

[0274] Embodiment 7. The dielectric substrate of embodiment 1, wherein the particle size distribution of the silica filler material of the first ceramic filler component comprises a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0275] Embodiment 8. The silica filler material of the first ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 2. The dielectric substrate of embodiment 1, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0276] Embodiment 9. The first filler material is about 10 m 2 2. The dielectric substrate of embodiment 1, further comprising an average surface area of ​​less than or equal to 1 / g.

[0277] Embodiment 10. The dielectric substrate of embodiment 1, wherein the first filler material comprises a silica-based compound.

[0278] Embodiment 11. The dielectric substrate of embodiment 1, wherein the first filler material comprises silica.

[0279] Embodiment 12. The dielectric substrate of embodiment 1, wherein the first resin matrix component comprises a perfluoropolymer.

[0280] Embodiment 13. The dielectric substrate of embodiment 12, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0281] Embodiment 14. The dielectric substrate of embodiment 12, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0282] Embodiment 15. A dielectric substrate as described in embodiment 12, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0283] Embodiment 16. The dielectric substrate of embodiment 1, wherein the content of the first resin matrix component is at least about 45 volume percent, based on the total volume of the first filled polymer layer.

[0284] Embodiment 17. A dielectric substrate as described in embodiment 1, wherein the content of the first resin matrix component is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0285] Embodiment 18. The dielectric substrate of embodiment 12, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the first filled polymer layer.

[0286] Embodiment 19. A dielectric substrate as described in embodiment 12, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0287] Embodiment 20. The dielectric substrate of embodiment 1, wherein the content of the first ceramic filler component is at least about 30 volume percent, based on the total volume of the first filled polymer layer.

[0288] Embodiment 21. The dielectric substrate of embodiment 1, wherein the content of the first ceramic filler component is about 57 volume % or less, based on the total volume of the first filled polymer layer.

[0289] Embodiment 22. The dielectric substrate of embodiment 1, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the first ceramic filler component.

[0290] Embodiment 23. The dielectric substrate of embodiment 1, wherein the content of the first filler material is about 100 volume % or less, based on the total volume of the first ceramic filler component.

[0291] Embodiment 24. The dielectric substrate of embodiment 1, wherein the first ceramic filler component further comprises a second filler material.

[0292] Embodiment 25. The dielectric substrate of embodiment 24, wherein the second filler material of the first ceramic filler component comprises a high dielectric constant ceramic material.

[0293] Embodiment 26. The dielectric substrate of embodiment 25, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0294] Embodiment 27. The dielectric substrate of embodiment 25, wherein the second ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0295] Embodiment 28. The dielectric substrate of embodiment 24, wherein the content of the second filler material in the first ceramic filler component is at least about 1 volume % based on the total volume of the first ceramic filler component.

[0296] Embodiment 29. The dielectric substrate of embodiment 24, wherein the content of the second filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0297] Embodiment 30. The dielectric substrate of embodiment 27, wherein the content of the TiO2 filler material in the first ceramic filler component is at least about 1 volume %, based on the total volume of the first ceramic filler component.

[0298] Embodiment 31. The dielectric substrate of embodiment 27, wherein the content of the TiO2 filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0299] Embodiment 32. The dielectric substrate of embodiment 1, wherein the first ceramic filler component is at least about 97%.

[0300] Embodiment 33. The dielectric substrate of embodiment 1, further comprising a second filled polymer layer underlying the polyimide layer and a second fluoropolymer-based adhesive layer underlying the second filled polymer layer, the second filled polymer layer comprising a second resin matrix component and a second ceramic filler component, the second ceramic filler component comprising a silica filler material, and the first filler material further comprising an average particle size of about 10 micrometers or less.

[0301] Embodiment 34. A dielectric substrate as described in embodiment 33, wherein the second fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0302] Embodiment 35. A dielectric substrate as described in embodiment 33, wherein the second fluoropolymer-based adhesive layer has an average thickness of about 7 micrometers or less.

[0303] Embodiment 36. The dielectric substrate of embodiment 33, wherein the second fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0304] Embodiment 37. The dielectric substrate of embodiment 33, wherein the second fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0305] Embodiment 38. A dielectric substrate as described in embodiment 33, wherein the second fluoropolymer adhesive layer is a PFA layer.

[0306] Embodiment 39. A dielectric substrate as described in embodiment 33, wherein the particle size distribution of the silica filler material of the second ceramic filler component includes a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0307] Embodiment 40. The silica filler material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 34. The dielectric substrate of embodiment 33, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0308] Embodiment 41. The first filler material is about 10 m 2 34. The dielectric substrate of embodiment 33, further comprising an average surface area of ​​less than or equal to 1 / g.

[0309] Embodiment 42. The dielectric substrate of embodiment 33, wherein the second filler material comprises a silica-based compound.

[0310] Embodiment 43. The dielectric substrate of embodiment 33, wherein the second filler material comprises silica.

[0311] Embodiment 44. A dielectric substrate as described in embodiment 33, wherein the second resin matrix comprises a perfluoropolymer.

[0312] Embodiment 45. The dielectric substrate of embodiment 44, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0313] Embodiment 46. The dielectric substrate of embodiment 44, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0314] Embodiment 47. A dielectric substrate as described in embodiment 44, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0315] Embodiment 48. The dielectric substrate of embodiment 33, wherein the content of the second resin matrix component is at least about 45 volume % based on the total volume of the second filled polymer layer.

[0316] Embodiment 49. A dielectric substrate as described in embodiment 33, wherein the content of the second resin matrix component is about 63 volume % or less, based on the total volume of the second filled polymer layer.

[0317] Embodiment 50. The dielectric substrate of embodiment 33, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the second filled polymer layer.

[0318] Embodiment 51. A dielectric substrate as described in embodiment 33, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the second filled polymer layer.

[0319] Embodiment 52. The dielectric substrate of embodiment 33, wherein the content of the second ceramic filler component is at least about 30 volume percent, based on the total volume of the second filled polymer layer.

[0320] Embodiment 53. The dielectric substrate of embodiment 33, wherein the content of the second ceramic filler component is about 57 volume % or less, based on the total volume of the second filled polymer layer.

[0321] Embodiment 54. The dielectric substrate of embodiment 33, wherein the content of the second filler material is at least about 80 volume % based on the total volume of the second ceramic filler component.

[0322] Embodiment 55. The dielectric substrate of embodiment 33, wherein the content of the second filler material is about 100 volume % or less, based on the total volume of the second ceramic filler component.

[0323] Embodiment 56. The dielectric substrate of embodiment 33, wherein the second ceramic filler component further comprises a TiO2 filler material.

[0324] Embodiment 57. The dielectric substrate of embodiment 56, wherein the content of the TiO2 filler material is at least about 1 volume percent, based on the total volume of the second ceramic filler component.

[0325] Embodiment 58. The dielectric substrate of embodiment 56, wherein the content of the TiO2 filler material is about 20 volume % or less, based on the total volume of the second ceramic filler component.

[0326] Embodiment 59. The dielectric substrate of embodiment 33, wherein the second ceramic filler component is at least about 97% amorphous.

[0327] Embodiment 60. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises a porosity of about 10% by volume or less.

[0328] Embodiment 61. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises an average thickness of at least about 10 micrometers.

[0329] Embodiment 62. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises an average thickness of about 200 micrometers or less.

[0330] Embodiment 63. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0331] Embodiment 64. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0332] Embodiment 65. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises a thermal expansion coefficient (x / y axis) of about 80 ppm / °C or less.

[0333] Embodiment 66. The dielectric substrate of embodiment 1 or 33, wherein the dielectric substrate comprises a peel strength between the first filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0334] Embodiment 67. The dielectric substrate of embodiment 1 or 33, wherein the dielectric substrate comprises a peel strength between the second filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0335] Embodiment 68. A dielectric substrate as described in embodiment 1 or 33, wherein the dielectric substrate comprises a moisture absorption rate of about 1.2% or less.

[0336] Embodiment 69. A copper clad laminate comprising a copper foil layer and a dielectric substrate covering the copper foil layer, the dielectric substrate comprising a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer, the first filled polymer layer comprising a first resin matrix component and a first ceramic filler component, the first ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 micrometers or less.

[0337] Embodiment 70. The copper clad laminate of embodiment 69, wherein the first fluoropolymer adhesive layer has an average thickness of at least about 0.2 micrometers.

[0338] Embodiment 71. A copper clad laminate as described in embodiment 69, wherein the first fluoropolymer adhesive layer has an average thickness of about 7 micrometers or less.

[0339] Embodiment 72. The copper clad laminate of embodiment 69, wherein the first fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0340] Embodiment 73. The copper clad laminate of embodiment 69, wherein the first fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0341] Embodiment 74. A copper clad laminate as described in embodiment 69, wherein the first fluoropolymer adhesive layer is a PFA layer.

[0342] Embodiment 75. The copper clad laminate of embodiment 69, wherein the particle size distribution of the silica filler material of the first ceramic filler component includes a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0343] Embodiment 76. The silica filler material of the first ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 70. The copper clad laminate of embodiment 69, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0344] Embodiment 77. The first filler material is about 10 m 2 70. The copper clad laminate of embodiment 69, further comprising an average surface area of ​​less than or equal to 1 / g.

[0345] Embodiment 78. The copper clad laminate of embodiment 69, wherein the first filler material comprises a silica-based compound.

[0346] Embodiment 79. The copper clad laminate of embodiment 69, wherein the first filler material comprises silica.

[0347] Embodiment 80. The copper clad laminate of embodiment 69, wherein the first resin matrix component comprises a perfluoropolymer.

[0348] Embodiment 81. The copper clad laminate of embodiment 80, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0349] Embodiment 82. The copper clad laminate of embodiment 80, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0350] Embodiment 83. The copper clad laminate of embodiment 80, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0351] Embodiment 84. The copper clad laminate of embodiment 69, wherein the content of the first resin matrix component is at least about 45 volume % based on the total volume of the first filled polymer layer.

[0352] Embodiment 85. The copper clad laminate of embodiment 69, wherein the content of the first resin matrix component is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0353] Embodiment 86. The copper clad laminate of embodiment 80, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the first filled polymer layer.

[0354] Embodiment 87. The copper clad laminate of embodiment 80, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0355] Embodiment 88. The copper clad laminate of embodiment 69, wherein the content of the first ceramic filler component is at least about 50 volume % relative to the total volume of the first filled polymer layer.

[0356] Embodiment 89. The copper clad laminate of embodiment 69, wherein the content of the first ceramic filler component is about 57 volume % or less, based on the total volume of the first filled polymer layer.

[0357] Embodiment 90. The copper clad laminate of embodiment 69, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the first ceramic filler component.

[0358] Embodiment 91. The copper clad laminate of embodiment 69, wherein the content of the first filler material is about 100 volume % or less, based on the total volume of the first ceramic filler component.

[0359] Embodiment 92. The copper clad laminate of embodiment 69, wherein the first ceramic filler component further comprises a second filler material.

[0360] Embodiment 93. The copper clad laminate of embodiment 92, wherein the second filler material of the first ceramic filler component comprises a high dielectric constant ceramic material.

[0361] Embodiment 94. The copper clad laminate of embodiment 93, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0362] Embodiment 95. The copper clad laminate of embodiment 93, wherein the first ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0363] Embodiment 96. The copper clad laminate of embodiment 92, wherein the content of the second filler material in the first ceramic filler component is at least about 1 volume % based on the total volume of the first ceramic filler component.

[0364] Embodiment 97. The copper clad laminate of embodiment 92, wherein the content of the second filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0365] Embodiment 98. The copper clad laminate of embodiment 95, wherein the content of the TiO2 filler material in the first ceramic filler component is at least about 1 volume % based on the total volume of the first ceramic filler component.

[0366] Embodiment 99. The copper clad laminate of embodiment 95, wherein the content of TiO2 filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0367] Embodiment 100. The copper clad laminate of embodiment 69, wherein the first ceramic filler component is at least about 97% amorphous.

[0368] Embodiment 101. The copper clad laminate of embodiment 69, wherein the dielectric substrate further comprises a second filled polymer layer covering the polyimide layer and a second fluoropolymer adhesive layer covering the second filled polymer layer, the second filled polymer layer comprising a second resin matrix component and a second ceramic filler component, the second ceramic filler component comprising a silica filler material, and the first filler material further comprising an average particle size of about 10 micrometers or less.

[0369] Embodiment 102. A copper clad laminate as described in embodiment 101, wherein the second fluoropolymer adhesive layer has an average thickness of at least about 0.2 micrometers.

[0370] Embodiment 103. A copper clad laminate as described in embodiment 101, wherein the second fluoropolymer adhesive layer has an average thickness of about 7 micrometers or less.

[0371] Embodiment 104. The copper clad laminate according to embodiment 101, wherein the second fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0372] Embodiment 105. The copper clad laminate according to embodiment 101, wherein the second fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0373] Embodiment 106. A copper clad laminate as described in embodiment 101, wherein the second fluoropolymer adhesive layer is a PFA layer.

[0374] Embodiment 107. A copper clad laminate as described in embodiment 101, wherein the particle size distribution of the silica filler material of the second ceramic filler component includes a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0375] Embodiment 108. The second filler material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 102. The copper clad laminate of embodiment 101, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0376] Embodiment 109. The second filler material is about 10 m 2 102. The copper clad laminate of embodiment 101, further comprising an average surface area of ​​less than or equal to 1 / g.

[0377] Embodiment 110. The copper clad laminate of embodiment 101, wherein the second filler material comprises a silica-based compound.

[0378] Embodiment 111. The copper clad laminate of embodiment 101, wherein the second filler material comprises silica.

[0379] Embodiment 112. A copper clad laminate as described in embodiment 101, wherein the second resin matrix comprises a perfluoropolymer.

[0380] Embodiment 113. The copper clad laminate of embodiment 112, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0381] Embodiment 114. The copper clad laminate of embodiment 112, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0382] Embodiment 115. The copper clad laminate of embodiment 112, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0383] Embodiment 116. The copper clad laminate of embodiment 101, wherein the content of the second resin matrix component is at least about 45% by volume, based on the total volume of the second filled polymer layer.

[0384] Embodiment 117. The copper clad laminate of embodiment 101, wherein the content of the second resin matrix component is about 63 volume % or less, based on the total volume of the second filled polymer layer.

[0385] Embodiment 118. The copper clad laminate of embodiment 101, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the second filled polymer layer.

[0386] Embodiment 119. The copper clad laminate of embodiment 101, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the second filled polymer layer.

[0387] Embodiment 120. The copper clad laminate of embodiment 101, wherein the content of the second ceramic filler component is at least about 50 volume % based on the total volume of the second filled polymer layer.

[0388] Embodiment 121. The copper clad laminate of embodiment 101, wherein the content of the second ceramic filler component is about 57 volume % or less, based on the total volume of the second filled polymer layer.

[0389] Embodiment 122. The copper clad laminate of embodiment 101, wherein the content of the second filler material is at least about 80 volume % based on the total volume of the second ceramic filler component.

[0390] Embodiment 123. The copper clad laminate of embodiment 101, wherein the content of the second filler material is about 100 volume % or less, based on the total volume of the second ceramic filler component.

[0391] Embodiment 124. The copper clad laminate of embodiment 101, wherein the second ceramic filler component further comprises a TiO2 filler material.

[0392] Embodiment 125. The copper clad laminate of embodiment 124, wherein the content of the TiO2 filler material is at least about 1 volume % based on the total volume of the second ceramic filler component.

[0393] Embodiment 126. The copper clad laminate of embodiment 124, wherein the content of the TiO2 filler material is about 20 volume % or less, based on the total volume of the second ceramic filler component.

[0394] Embodiment 127. The copper clad laminate of embodiment 101, wherein the second ceramic filler component is at least about 97% amorphous.

[0395] Embodiment 128. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a porosity of about 10% by volume or less.

[0396] Embodiment 129. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises an average thickness of at least about 10 micrometers.

[0397] Embodiment 130. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises an average thickness of about 200 micrometers or less.

[0398] Embodiment 131. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0399] Embodiment 132. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0400] Embodiment 133. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a thermal expansion coefficient (x / y axis) of about 80 ppm / °C or less.

[0401] Embodiment 134. The copper clad laminate of embodiment 69 or 101, wherein the dielectric substrate comprises a peel strength between the first filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0402] Embodiment 135. The copper clad laminate of embodiment 69 or 101, wherein the dielectric substrate comprises a peel strength between the second filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0403] Embodiment 136. The copper clad laminate of embodiment 69 or 101, wherein the copper clad laminate comprises a peel strength between the copper foil layer and the dielectric substrate of at least about 6 lb / in.

[0404] Embodiment 137. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a tensile strength of at least about 60 MPa.

[0405] Embodiment 138. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises an elastic modulus of at least about 1.3 GPa.

[0406] Embodiment 139. A copper clad laminate as described in embodiment 69 or 101, wherein the dielectric substrate comprises a moisture absorption rate of about 1.2% or less.

[0407] Embodiment 140. The copper clad laminate of embodiment 69 or 101, wherein the copper clad laminate comprises less than about 10% by volume porosity.

[0408] Embodiment 141. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising a copper foil layer and a dielectric substrate covering the copper foil layer, the dielectric substrate comprising a first fluoropolymer adhesive layer, a polyimide layer covering the fluoropolymer adhesive layer, and a first filled polymer layer covering the polyimide layer, the first filled polymer layer comprising a first resin matrix component and a first ceramic filler component, the first ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 micrometers or less.

[0409] Embodiment 142. A printed circuit board as described in embodiment 141, wherein the first fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0410] Embodiment 143. A printed circuit board as described in embodiment 141, wherein the first fluoropolymer-based adhesive layer has an average thickness of about 7 micrometers or less.

[0411] Embodiment 144. The printed circuit board of embodiment 141, wherein the first fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0412] Embodiment 145. The printed circuit board according to embodiment 141, wherein the first fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0413] Embodiment 146. A printed circuit board as described in embodiment 141, wherein the first fluoropolymer adhesive layer is a PFA layer.

[0414] Embodiment 147. A printed circuit board as described in embodiment 141, wherein the particle size distribution of the silica filler material of the first ceramic filler component includes a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0415] Embodiment 148. The silica filler material of the first ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 142. The printed circuit board of embodiment 141, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0416] Embodiment 149. The first filler material is about 10 m 2 142. The printed circuit board of embodiment 141, further comprising an average surface area of ​​less than or equal to 1 / g.

[0417] Embodiment 150. The printed circuit board of embodiment 141, wherein the first filler material comprises a silica-based compound.

[0418] Embodiment 151. The printed circuit board of embodiment 141, wherein the first filler material comprises silica.

[0419] Embodiment 152. The printed circuit board of embodiment 141, wherein the first resin matrix component comprises a perfluoropolymer.

[0420] Embodiment 153. The printed circuit board of embodiment 152, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0421] Embodiment 154. The printed circuit board of embodiment 152, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0422] Embodiment 155. The printed circuit board of embodiment 152, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0423] Embodiment 156. The printed circuit board of embodiment 141, wherein the content of the first resin matrix component is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0424] Embodiment 157. The printed circuit board of embodiment 141, wherein the content of the first resin matrix component is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0425] Embodiment 158. A printed circuit board as described in embodiment 152, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the first filled polymer layer.

[0426] Embodiment 159. A printed circuit board as described in embodiment 152, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0427] Embodiment 160. The printed circuit board of embodiment 141, wherein the content of the first ceramic filler component is at least about 30 volume percent, based on the total volume of the first filled polymer layer.

[0428] Embodiment 161. The printed circuit board of embodiment 141, wherein the content of the first ceramic filler component is about 57 volume % or less, based on the total volume of the first filled polymer layer.

[0429] Embodiment 162. The printed circuit board of embodiment 141, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the first ceramic filler component.

[0430] Embodiment 163. The printed circuit board of embodiment 141, wherein the content of the first filler material is about 100 volume % or less, based on the total volume of the first ceramic filler component.

[0431] Embodiment 164. The printed circuit board of embodiment 141, wherein the first ceramic filler component further comprises a second filler material.

[0432] Embodiment 165. The printed circuit board of embodiment 164, wherein the second filler material of the first ceramic filler component comprises a high dielectric constant ceramic material.

[0433] Embodiment 166. The printed circuit board of embodiment 165, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0434] Embodiment 167. The printed circuit board of embodiment 165, wherein the first ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0435] Embodiment 168. The printed circuit board of embodiment 164, wherein the content of the second filler material in the first ceramic filler component is at least about 1 volume % relative to the total volume of the first ceramic filler component.

[0436] Embodiment 169. The printed circuit board of embodiment 164, wherein the content of the second filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0437] Embodiment 170. The printed circuit board of embodiment 167, wherein the content of the TiO2 filler material in the first ceramic filler component is at least about 1 volume %, based on the total volume of the first ceramic filler component.

[0438] Embodiment 171. The printed circuit board of embodiment 167, wherein the content of the TiO2 filler material in the first ceramic filler component is about 20 volume % or less, based on the total volume of the first ceramic filler component.

[0439] Embodiment 172. The printed circuit board of embodiment 141, wherein the first ceramic filler component is at least about 97% amorphous.

[0440] Embodiment 173. The printed circuit board of embodiment 141, wherein the dielectric substrate further comprises a second filled polymer layer covering the polyimide layer and a second fluoropolymer-based adhesive layer covering the second filled polymer layer, the second filled polymer layer comprising a second resin matrix component and a second ceramic filler component, the second ceramic filler component comprising a silica filler material, and the first filler material further comprising an average particle size of about 10 micrometers or less.

[0441] Embodiment 174. A printed circuit board as described in embodiment 173, wherein the second fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0442] Embodiment 175. A printed circuit board as described in embodiment 173, wherein the second fluoropolymer-based adhesive layer has an average thickness of about 7 micrometers or less.

[0443] Embodiment 176. The printed circuit board according to embodiment 173, wherein the second fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0444] Embodiment 177. The printed circuit board of embodiment 173, wherein the second fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0445] Embodiment 178. A printed circuit board as described in embodiment 173, wherein the second fluoropolymer adhesive layer is a PFA layer.

[0446] Embodiment 179. A printed circuit board as described in embodiment 173, wherein the particle size distribution of the silica filler material of the second ceramic filler component includes a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0447] Embodiment 180. The second filler material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the silica filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 174. The printed circuit board of embodiment 173, which is equal to the particle size distribution measurement.

[0448] Embodiment 181. The second filler material is about 10 m 2 174. The printed circuit board of embodiment 173, further comprising an average surface area of ​​less than or equal to 1 / g.

[0449] Embodiment 182. The printed circuit board of embodiment 173, wherein the second filler material comprises a silica-based compound.

[0450] Embodiment 183. The printed circuit board of embodiment 173, wherein the second filler material comprises silica.

[0451] Embodiment 184. The printed circuit board of embodiment 173, wherein the second resin matrix comprises a perfluoropolymer.

[0452] Embodiment 185. The printed circuit board of embodiment 184, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0453] Embodiment 186. The printed circuit board of embodiment 184, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0454] Embodiment 187. The printed circuit board of embodiment 184, wherein the perfluoropolymer is composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0455] Embodiment 188. The printed circuit board of embodiment 173, wherein the content of the second resin matrix component is at least about 45% by volume, based on the total volume of the second filled polymer layer.

[0456] Embodiment 189. The printed circuit board of embodiment 173, wherein the content of the second resin matrix component is about 63 volume % or less, based on the total volume of the second filled polymer layer.

[0457] Embodiment 190. The printed circuit board of embodiment 173, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the second filled polymer layer.

[0458] Embodiment 191. The printed circuit board of embodiment 173, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the second filled polymer layer.

[0459] Embodiment 192. The printed circuit board of embodiment 173, wherein the content of the second ceramic filler component is at least about 30 volume percent, based on the total volume of the second filled polymer layer.

[0460] Embodiment 193. The printed circuit board of embodiment 173, wherein the content of the second ceramic filler component is about 57 volume % or less, based on the total volume of the second filled polymer layer.

[0461] Embodiment 194. The printed circuit board of embodiment 173, wherein the content of the second filler material is at least about 80 volume % based on the total volume of the second ceramic filler component.

[0462] Embodiment 195. The printed circuit board of embodiment 173, wherein the content of the second filler material is about 100 volume % or less, based on the total volume of the second ceramic filler component.

[0463] Embodiment 196. The printed circuit board of embodiment 173, wherein the second ceramic filler component further comprises a TiO2 filler material.

[0464] Embodiment 197. The printed circuit board of embodiment 196, wherein the content of the TiO2 filler material is at least about 1 volume percent, based on the total volume of the second ceramic filler component.

[0465] Embodiment 198. The printed circuit board of embodiment 196, wherein the content of the TiO2 filler material is about 20 volume % or less, based on the total volume of the second ceramic filler component.

[0466] Embodiment 199. The printed circuit board of embodiment 173, wherein the second ceramic filler component is at least about 97% amorphous.

[0467] Embodiment 200. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate comprises a porosity of about 10 volume percent or less.

[0468] Embodiment 201. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate comprises an average thickness of at least about 10 micrometers.

[0469] Embodiment 202. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate has an average thickness of about 200 micrometers or less.

[0470] Embodiment 203. A printed circuit board as described in embodiment 141 or 173, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

[0471] Embodiment 204. A printed circuit board as described in embodiment 141 or 173, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.0014 or less.

[0472] Embodiment 205. A printed circuit board as described in embodiment 141 or 173, wherein the dielectric substrate comprises a thermal expansion coefficient (x / y axis) of about 80 ppm / °C or less.

[0473] Embodiment 206. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate comprises a peel strength between the first filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0474] Embodiment 207. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate comprises a peel strength between the second filled polymer layer and the polyimide layer of at least about 5 lb / in.

[0475] Embodiment 208. A printed circuit board as described in embodiment 141 or 173, wherein the printed circuit board comprises a peel strength between the copper foil layer and the dielectric substrate of at least about 5 lb / in.

[0476] Embodiment 209. A printed circuit board as described in embodiment 141 or 173, wherein the dielectric substrate comprises a tensile strength of at least about 60 MPa.

[0477] Embodiment 210. A printed circuit board as described in embodiment 141 or 173, wherein the dielectric substrate comprises an elastic modulus of at least about 1.3 GPa.

[0478] Embodiment 211. The printed circuit board of embodiment 141 or 173, wherein the dielectric substrate comprises a moisture absorption rate of about 1.2% or less.

[0479] Embodiment 212. A printed circuit board as described in embodiment 141 or 173, wherein the printed circuit board comprises a porosity of about 10% by volume or less.

[0480] Embodiment 213. A method of forming a dielectric substrate comprising: providing a first fluoropolymer based adhesive layer; providing a polyimide layer overlying the first fluoropolymer based adhesive layer; combining a first resin matrix precursor component and a first ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a first filled polymer layer overlying the polyimide layer, wherein the first ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 10 micrometers or less.

[0481] Embodiment 214. The method of embodiment 213, wherein the first fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0482] Embodiment 215. The method of embodiment 213, wherein the first fluoropolymer adhesive layer has an average thickness of about 7 micrometers or less.

[0483] Embodiment 216. The method of embodiment 213, wherein the first fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0484] Embodiment 217. The method of embodiment 213, wherein the first fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0485] Embodiment 218. The method of embodiment 213, wherein the first fluoropolymer adhesive layer is a PFA layer.

[0486] Embodiment 219. The method of embodiment 213, wherein the particle size distribution of the first filler precursor material of the first ceramic filler precursor component comprises a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0487] Embodiment 220. The first filler precursor material of the first ceramic filler precursor component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 The method of embodiment 213, wherein the particle size distribution measurement is equivalent to the particle size distribution measurement.

[0488] Embodiment 221. The first filler precursor material is about 10 m 2 214. The method of embodiment 213, further comprising an average surface area of ​​less than or equal to 1 / g.

[0489] Embodiment 222. The method of embodiment 213, wherein the first filler precursor material comprises a silica-based compound.

[0490] Embodiment 223. The method of embodiment 213, wherein the first filler precursor material comprises silica.

[0491] Embodiment 224. The method of embodiment 213, wherein the first resin matrix precursor component comprises a perfluoropolymer.

[0492] Embodiment 225. The method of embodiment 224, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0493] Embodiment 226. The method of embodiment 224, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0494] Embodiment 227. The method of embodiment 224, wherein the perfluoropolymer is comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0495] Embodiment 228. The method of embodiment 213, wherein the content of the first resin matrix precursor component is at least about 45% by volume, based on the total volume of the first filled polymer layer.

[0496] Embodiment 229. The method of embodiment 213, wherein the content of the first resin matrix precursor component is about 63 volume % or less, based on the total volume of the first filled polymer layer.

[0497] Embodiment 230. The method of embodiment 224, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the first filled polymer layer.

[0498] Embodiment 231. The method of embodiment 224, wherein the perfluoropolymer content is about 63% by volume or less, based on the total volume of the first filled polymer layer.

[0499] Embodiment 232. The method of embodiment 213, wherein the content of the first ceramic filler precursor component is at least about 30 volume percent, based on the total volume of the first filled polymer layer.

[0500] Embodiment 233. The method of embodiment 213, wherein the content of the first ceramic filler precursor component is about 57 volume % or less, based on the total volume of the first filled polymer layer.

[0501] Embodiment 234. The method of embodiment 213, wherein the content of the first filler precursor material is at least about 80 volume % based on the total volume of the first ceramic filler precursor component.

[0502] Embodiment 235. The method of embodiment 213, wherein the content of the first filler precursor material is about 100 volume % or less, based on the total volume of the first ceramic filler precursor component.

[0503] Embodiment 236. The method of embodiment 213, wherein the first ceramic filler precursor component further comprises a second filler precursor material.

[0504] Embodiment 237. The method of embodiment 236, wherein the second filler precursor material of the first ceramic filler precursor component comprises a high dielectric constant ceramic material.

[0505] Embodiment 238. The method of embodiment 237, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0506] Embodiment 239. The method of embodiment 237, wherein the first ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0507] Embodiment 240. The method of embodiment 236, wherein the content of the second filler precursor material in the first ceramic filler precursor component is at least about 1 vol. %, based on the total volume of the first ceramic filler precursor component.

[0508] Embodiment 241. The method of embodiment 236, wherein the content of the second filler precursor material in the first ceramic filler precursor component is about 20 volume % or less, based on the total volume of the first ceramic filler precursor component.

[0509] Embodiment 242. The method of embodiment 239, wherein the content of the TiO2 filler material in the first ceramic filler precursor component is at least about 1 vol. %, based on the total volume of the first ceramic filler precursor component.

[0510] Embodiment 243. The method of embodiment 239, wherein the content of the TiO2 filler material in the first ceramic filler precursor component is about 20 volume % or less, based on the total volume of the first ceramic filler precursor component.

[0511] Embodiment 244. The method of embodiment 213, wherein the first ceramic filler precursor component is at least about 97% amorphous.

[0512] Embodiment 245. The method of embodiment 213, wherein the dielectric substrate further comprises a second filled polymer layer underlying the polyimide layer and a second fluoropolymer-based adhesive layer underlying the second filled polymer layer, the second filled polymer layer comprising a second resin matrix precursor component and a second ceramic filler precursor component, the second ceramic filler precursor component comprising a third filler precursor material, the third filler precursor material further comprising an average particle size of about 10 micrometers or less.

[0513] Embodiment 246. The method of embodiment 245, wherein the second fluoropolymer-based adhesive layer has an average thickness of at least about 0.2 micrometers.

[0514] Embodiment 247. The method of embodiment 245, wherein the second fluoropolymer adhesive layer has an average thickness of about 7 micrometers or less.

[0515] Embodiment 248. The method of embodiment 245, wherein the second fluoropolymer-based adhesive layer comprises a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0516] Embodiment 249. The method of embodiment 245, wherein the second fluoropolymer-based adhesive layer is composed of a fluoropolymer (e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene (mPTFE), copolymers and terpolymers of tetrafluoroethylene such as fluorinated ethylene-propylene (FEP), perfluoroalkoxy polymer resins (PFA), and modified perfluoroalkoxy polymer resins (mPFA), and derivatives and blends thereof.

[0517] Embodiment 250. The method of embodiment 245, wherein the second fluoropolymer adhesive layer is a PFA layer.

[0518] Embodiment 251. The method of embodiment 245, wherein the particle size distribution of the third filler precursor material of the second ceramic filler precursor component comprises a D10 of at least about 0.2 micrometers and not more than about 1.6, a D50 of at least about 0.5 micrometers and not more than about 2.7 micrometers, and a D90 of at least about 0.8 micrometers and not more than about 4.7 micrometers.

[0519] Embodiment 252. The third filler precursor material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, the PSDS being (D 90 -D 10 ) / D 50 where D 90 is the D of the third filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the third filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the third filler precursor material 50 The method of embodiment 245, wherein the particle size distribution measurement is equivalent to the particle size distribution measurement.

[0520] Embodiment 253. The third filler precursor material is about 10 m 2 26. The method of embodiment 245, further comprising an average surface area of ​​less than or equal to 1 / g.

[0521] Embodiment 254. The method of embodiment 245, wherein the third filler precursor material comprises a silica-based compound.

[0522] Embodiment 255. The method of embodiment 245, wherein the third filler precursor material comprises silica.

[0523] Embodiment 256. The method of embodiment 245, wherein the third filler precursor material comprises a perfluoropolymer.

[0524] Embodiment 257. The method of embodiment 256, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0525] Embodiment 258. The method of embodiment 256, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0526] Embodiment 259. The method of embodiment 256, wherein the perfluoropolymer is comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fl...

Claims

1. A copper clad laminate comprising a copper foil layer and a dielectric substrate covering the copper foil layer, the dielectric substrate comprising: a first fluoropolymer adhesive layer, a polyimide layer overlying the first fluoropolymer adhesive layer, and a first filled polymer layer overlying the polyimide layer; 1. A copper clad laminate, wherein the first filled polymer layer comprises a first resin matrix component and a first ceramic filler component, the first ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 micrometers or less.

2. 10. The copper clad laminate of claim 1, wherein the first fluoropolymer based adhesive layer has an average thickness of at least about 0.2 micrometers and no greater than about 7 micrometers.

3. The first filler material of the first ceramic filler component comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D ９０ -D １０ ) / D ５０ where D ９０ is the D of the first filler material ９０ D is equal to the particle size distribution measurement １０ is the D of the first filler material １０ D is equal to the particle size distribution measurement ５０ is the D of the first filler material ５０ The copper clad laminate of claim 1 , wherein the particle size distribution is equal to the particle size distribution measurement.

4. The first filler material is about 10 m ２ 2. The copper clad laminate of claim 1, further comprising an average surface area of ​​less than or equal to 1 / g.

5. The copper clad laminate of claim 1 , wherein the first filler material comprises a silica-based compound.

6. The copper clad laminate of claim 1 , wherein the first filler material comprises silica.

7. The copper clad laminate of claim 1 , wherein the first resin matrix component comprises a perfluoropolymer.

8. 2. The copper clad laminate of claim 1, wherein the content of the first resin matrix component is at least about 45 volume percent and not more than about 63 volume percent, based on the total volume of the first filled polymer layer.

9. 2. The copper clad laminate of claim 1, wherein the content of the first ceramic filler component is at least about 30 volume percent and not more than about 57 volume percent, based on the total volume of the first filled polymer layer.

10. 2. The copper clad laminate of claim 1, wherein the content of the first filler material is at least about 80 volume percent and not more than about 100 volume percent, based on the total volume of the first ceramic filler component.

11. 10. The copper clad laminate of claim 1, wherein the dielectric substrate comprises a dissipation factor (5 GHz, 20% RH) of about 0.005 or less.

12. 1. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising: A copper foil layer and a dielectric substrate covering the copper foil layer, the dielectric substrate comprising: a first fluoropolymer adhesive layer, a polyimide layer overlying the first fluoropolymer adhesive layer, and a first filled polymer layer overlying the polyimide layer; The first filled polymer layer comprises a first resin matrix component and a first ceramic filler component, the first ceramic filler component comprises a first filler material, the first filler material further comprising an average particle size of about 10 micrometers or less.

13. 13. The printed circuit board of claim 12, wherein the first fluoropolymer based adhesive layer has an average thickness of at least about 0.2 micrometers and no greater than about 7 micrometers.

14. The first filler material of the first ceramic filler component comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D ９０ -D １０ ) / D ５０ where D ９０ is the D of the first filler material ９０ D is equal to the particle size distribution measurement １０ is the D of the first filler material １０ D is equal to the particle size distribution measurement ５０ is the D of the first filler material ５０ The printed circuit board of claim 12, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

15. 1. A method of forming a dielectric substrate, the method comprising: Providing a first fluoropolymer based adhesive layer; providing a polyimide layer overlying the first fluoropolymer based adhesive layer; combining a first resin matrix precursor component and a first ceramic filler precursor component to form a forming mixture; forming the forming mixture into a first filled polymer layer overlying the polyimide layer, wherein the first ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 10 micrometers or less.

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