Substrate processing method

Abstract

To efficiently advance the entire substrate processing in substrate processing using a batch processing unit and a single wafer processing unit.SOLUTION: A substrate processing method includes the steps of: calculating a required time which is a time required until substrate processing is finished in a single-wafer processing unit, according to the number of substrates on standby which is the number of substrates after the chemical liquid processing is performed in a batch processing unit and before drying processing is performed in the single-wafer processing unit; and controlling the start time of the chemical liquid processing in the batch processing unit such that the required time is shorter than the time required for the chemical liquid processing in the batch processing unit.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The technology disclosed in this specification relates to substrate processing, where the substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells. [Background technology]

[0002] Conventionally, a batch-type processing apparatus (hereinafter also referred to as a batch processing apparatus) that etches a silicon nitride film on a substrate using phosphoric acid has been proposed (see, for example, Patent Document 1). A batch processing apparatus can process a plurality of substrates at once, and therefore has a high throughput. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2016-502275 Summary of the Invention [Problem to be solved by the invention]

[0004] When a substrate that has been chemically treated in the above-mentioned batch processing apparatus is cleaned and then dried, if the surface pattern formed on the substrate is complex (e.g., a three-dimensional structure), the drying process may be insufficient.

[0005] On the other hand, a single-wafer processing apparatus that processes substrates one by one (hereinafter also referred to as a single-wafer processing apparatus) has a high drying capacity and can therefore adequately perform the above drying process.

[0006] When drying processing is performed in a single-wafer processing section, if the waiting time for substrates processed in a batch processing section until they are processed in the single-wafer processing section becomes long, the efficiency of the entire substrate processing decreases.

[0007] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for efficiently carrying out the entire substrate processing in substrate processing using a batch processing unit and a single wafer processing unit. [Means for solving the problem]

[0008] A substrate processing method that is a first aspect of the technology disclosed in the present specification is a substrate processing method that performs substrate processing using a batch processing unit that performs substrate processing including chemical liquid processing on a plurality of substrates, and at least one single-wafer processing unit that performs the substrate processing including drying processing on one of the substrates, and includes the steps of: calculating a required time, which is the time it takes for the substrates to finish the substrate processing in the single-wafer processing unit, based on a waiting number, which is the number of substrates after the chemical processing has been performed in the batch processing unit and before the drying processing is performed in the single-wafer processing unit; and controlling the start time of the chemical processing in the batch processing unit so that the required time is shorter than the time it takes for the chemical processing in the batch processing unit.

[0009] A substrate processing method according to a second aspect of the technology disclosed in the present specification is related to the substrate processing method according to the first aspect, and the required time includes a remaining time for the ongoing substrate processing.

[0010] A substrate processing method that is a third aspect of the technology disclosed in the present specification is a substrate processing method that performs substrate processing using a batch processing unit that performs substrate processing including chemical processing on a plurality of substrates, and at least one single-wafer processing unit that performs the substrate processing including drying processing on one of the substrates, and includes the steps of: calculating a required time, which is the time it takes for the substrates to complete the substrate processing in the single-wafer processing unit, based on a waiting number, which is the number of substrates after the chemical processing has been performed in the batch processing unit and before the drying processing is performed in the single-wafer processing unit; and changing the number of substrates to be processed in the batch processing unit so that the required time is shorter than the time required for the chemical processing in the batch processing unit.

[0011] A substrate processing method which is a fourth aspect of the technology disclosed in the present specification is related to the substrate processing method which is any one of the first to third aspects, and further includes a step of performing a cleaning process in the batch processing unit by immersing the plurality of substrates after the chemical processing in a cleaning tank, and the step of calculating the required time is a step of calculating the required time including the time taken for the cleaning process depending on the number of substrates waiting to be immersed in the cleaning tank.

[0012] A substrate processing method which is a fifth aspect of the technology disclosed in the present specification is related to a substrate processing method which is any one of the first to third aspects, and further includes a step of performing a cleaning process on the substrate in the single-wafer processing section before the drying process is performed.

[0013] A substrate processing method which is a sixth aspect of the technology disclosed in the present specification is related to the substrate processing method which is the fifth aspect, and the step of calculating the required time is a step of calculating the required time, including the time required for the cleaning process, based on the number of substrates waiting before being moved from the batch processing unit to the single substrate processing unit.

[0014] A substrate processing method which is a seventh aspect of the technology disclosed in the present specification relates to a substrate processing method which is any one of the first to sixth aspects, and the chemical liquid processing in the batch processing unit is performed by immersing the substrates in a chemical liquid tank, and the batch processing unit further includes a step of immersing the plurality of substrates after the chemical liquid processing in a cleaning tank to perform a cleaning process, the chemical liquid tank has a first area where the chemical liquid processing is started at a first start time and a second area where the chemical liquid processing is started at a second start time which is different from the first start time, and the cleaning tank has a third area where the cleaning process is performed on the substrates which have been subjected to the chemical liquid processing in the first area, and a fourth area where the cleaning process is performed on the substrates which have been subjected to the chemical liquid processing in the second area.

[0015] A substrate processing method which is an eighth aspect of the technology disclosed in the present specification relates to a substrate processing method which is any one of the first to seventh aspects, and the required time includes the time it takes for the substrate to move from the batch processing unit to the single wafer processing unit.

[0016] A substrate processing method which is a ninth aspect of the technology disclosed in the present specification relates to a substrate processing method which is any one of the first to eighth aspects, and the required time includes the time required for changing the posture of the substrate which has been processed in the batch processing unit so that it can be processed in the single-wafer processing unit.

[0017] A substrate processing method which is a tenth aspect of the technology disclosed in the present specification relates to a substrate processing method which is any one of the first to ninth aspects, and the required time includes the time required for the substrate processing which is repeatedly performed in one of the single-wafer processing sections when the waiting number of substrates is distributed to multiple single-wafer processing sections. Effect of the Invention

[0018] According to at least the first and third aspects of the technology disclosed in the present specification, it is possible to suppress an increase in the number of substrates waiting to be subjected to drying processing in the single wafer processing unit after chemical processing in the batch processing unit, thereby making it possible to efficiently perform the entire substrate processing performed by the batch processing unit and the single wafer processing unit.

[0019] Furthermore, objects, features, aspects and advantages associated with the technology disclosed herein will become more apparent from the detailed description set forth below and the accompanying drawings. [Brief description of the drawings]

[0020] [Figure 1] 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 1A and 1B are diagrams partially and roughly illustrating examples of three-dimensional structures formed on a substrate. [Diagram 3] 1 is a flowchart illustrating an example of a processing step for a substrate according to an embodiment. [Figure 4] FIG. 2 is a diagram illustrating an example of a configuration of a batch processing unit. [Diagram 5] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot. [Figure 6] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot. [Figure 7] FIG. 2 is a diagram illustrating an example of a configuration of a single-wafer processing section. [Figure 8] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot and its surroundings. [Figure 9] FIG. 2 is a conceptual diagram illustrating the relationship of formula (1). [Figure 10] FIG. 2 is a conceptual diagram illustrating the relationship of formula (2). [Figure 11] 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus according to an embodiment of the present invention; [Figure 12] FIG. 2 is a conceptual diagram illustrating the relationship of formula (3). [Figure 13]FIG. 2 is a conceptual diagram illustrating the relationship of formula (4). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, the embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but they are merely examples and are not necessarily all essential features for enabling the embodiments to be implemented.

[0022] The drawings are schematic, and for the convenience of explanation, the configuration may be omitted or simplified as appropriate. The size and positional relationship of the configurations shown in different drawings are not necessarily described accurately, and may be changed as appropriate. Hatching may be added to drawings such as plan views that are not cross-sectional views, in order to make it easier to understand the contents of the embodiment.

[0023] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0024] Furthermore, in the description in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0025] Furthermore, even if ordinal numbers such as "first" or "second" are used in the description of this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and the contents of the embodiments are not limited to the orders that may result from these ordinal numbers.

[0026] In addition, in the description given in this specification, expressions such as "positive direction of the ... axis" or "negative direction of the ... axis" refer to the direction along the arrow of the ... axis shown in the figure as the positive direction, and the direction opposite to the arrow of the ... axis shown in the figure as the negative direction.

[0027] Furthermore, although the descriptions in this specification may use terms indicating specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," these terms are used for convenience to facilitate understanding of the contents of the embodiments, and do not relate to the positions or directions in which the embodiments are actually implemented.

[0028] <First embodiment> A substrate processing method according to this embodiment will now be described.

[0029] <Overall configuration of the substrate processing equipment> 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus 10 according to the present embodiment. In FIG. 1, the Z-axis direction is the vertically upward direction. The substrate processing apparatus 10 is an apparatus for performing wet processing on a substrate W.

[0030] The substrate W is, for example, a semiconductor substrate, and a surface pattern is formed on the surface of the substrate W. A specific example of the surface pattern is a three-dimensional structure formed during the manufacture of a three-dimensional NAND (Not-AND) flash memory.

[0031] Fig. 2 is a diagram partially and roughly illustrating an example of a three-dimensional structure formed on a substrate W. In the example of Fig. 2, the substrate W includes a support layer 93. The support layer 93 is, for example, a silicon layer. A laminated structure 90 is formed on an upper surface of the support layer 93.

[0032] The laminated structure 90 includes a plurality of insulating films 91 and a plurality of sacrificial films 92. The insulating films 91 and the sacrificial films 92 are alternately laminated in the Z-axis direction. The insulating films 91 are, for example, a silicon dioxide film, and the sacrificial films 92 are, for example, a silicon nitride film. The insulating films 91 and the sacrificial films 92 each have a thickness of, for example, 1 nm or more and 50 nm or less.

[0033] Moreover, a trench 94 is formed in the laminated structure 90. The trench 94 penetrates the laminated structure 90 along the thickness direction of the substrate W. A pillar (not shown) is also provided in the laminated structure 90. The pillar supports the insulating film 91 when the sacrificial film 92 is removed. The width of the pillar (width parallel to the main surface of the substrate W) is, for example, not less than 1 nm and not more than 50 nm.

[0034] In the present embodiment, as a specific example, the substrate processing apparatus 10 etches the sacrificial film 92, but the substrate processing apparatus 10 may perform other processes on the substrate W. Below, an example of the overall configuration of the substrate processing apparatus 10 will be outlined, and then each example of the configuration will be described in detail.

[0035] As shown in the example of FIG. 1, the substrate processing apparatus 10 includes a batch processing section 30 which processes multiple substrates W collectively (i.e., performs batch-type substrate processing), a single-wafer processing section 50 which processes substrates one by one (i.e., performs single-wafer substrate processing), an inter-batch transport section 60, and an inter-batch single-wafer transport section 70.

[0036] 1, the substrate processing apparatus 10 includes a housing 100, which houses at least a batch processing section 30, a single wafer processing section 50, an inter-batch transport section 60, and an inter-batch single wafer transport section 70. That is, in the example of FIG. 1, the substrate processing apparatus 10 is a hybrid type substrate processing apparatus in which the batch processing section 30 and the single wafer processing section 50 are mixed in the same housing 100.

[0037] 1, the substrate processing apparatus 10 is also provided with a load port 11 as a loading port into which multiple substrates W are loaded from the outside. A portable container (hereinafter referred to as a carrier C1) for storing multiple substrates W is loaded into the load port 11. In the example of FIG. 1, multiple carriers C1 are placed in a row along the Y-axis direction in the load port 11.

[0038] The carrier C1 may be a FOUP (Front Opening Unified Pod) that stores the substrates W in an enclosed space, a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette) that exposes the substrates W to the outside air. Here, the multiple substrates W are stored in the carrier C1 in a horizontal position with their surfaces facing the positive direction of the Z axis and lined up in the Z axis direction. The horizontal position here means that the thickness direction of the substrates W is aligned with the Z axis direction. The number of substrates W stored in the carrier C1 is not particularly limited, but is, for example, 25.

[0039] 1, the substrate processing apparatus 10 is also provided with an indexer transport section 20 that transports multiple substrates W between each carrier C1 and the inter-batch transport section 60. The indexer transport section 20 is provided within a housing 100. The indexer transport section 20 collectively takes out multiple substrates W from each carrier C1, converts the attitude of the substrates W from a horizontal attitude to an upright attitude, and transports the multiple substrates W in the upright attitude to the inter-batch transport section 60. The upright attitude here refers to an attitude in which the thickness direction of the substrate W is aligned with the horizontal direction.

[0040] The indexer transport section 20 transfers the plurality of substrates W to the inter-batch transport section 60 in an upright position, for example, with the surfaces of the substrates W facing in the negative direction of the Y axis.

[0041] The inter-batch transport section 60 receives a plurality of substrates W in an upright position from the indexer transport section 20 all at once, and transports the received plurality of substrates W all at once to the batch processing section 30 in sequence.

[0042] The batch processing unit 30 is a batch-type processing device that performs wet processing on a plurality of substrates W collectively. Specifically, the batch processing unit 30 includes a processing tank 31, which will be described later. A processing liquid is stored in the processing tank 31. By immersing the plurality of substrates W in the processing liquid in the processing tank 31, the batch processing unit 30 can perform processing on the plurality of substrates W collectively according to the processing liquid.

[0043] 1, a plurality of batch processing units 30 are arranged in a line along the X-axis direction. In addition, in the example of Fig. 1, a batch processing unit 30a for a chemical liquid and a batch processing unit 30b for a rinsing liquid are provided as the plurality of batch processing units 30.

[0044] The processing tank 31 of the batch processing unit 30a stores a chemical liquid. When the substrate processing apparatus 10 etches the sacrificial film 92 of the substrate W, the chemical liquid contains an etching liquid (e.g., high-temperature phosphoric acid) capable of removing the sacrificial film 92. By immersing a plurality of substrates W in this chemical liquid, the chemical liquid acts on the sacrificial film 92 through the trenches 94 of each substrate W, and can etch the sacrificial film 92.

[0045] The processing tank 31 of the batch processing unit 30b stores a rinsing liquid. The rinsing liquid includes, for example, pure water. By immersing the substrates W after the chemical processing in the rinsing liquid, the chemical liquid adhering to the substrates W can be replaced with the rinsing liquid and the substrates W can be cleaned.

[0046] The inter-batch transport unit 60 first receives the multiple substrates W in an upright position from the indexer transport unit 20, and transports the multiple substrates W to the batch processing unit 30a. The multiple substrates W are collectively treated with a chemical solution by the batch processing unit 30a. As a result, for example, the sacrificial film 92 of each substrate W is removed. Due to the removal of the sacrificial film 92, the insulating film 91 is no longer supported by the sacrificial film 92. Therefore, the insulating film 91 becomes more likely to collapse.

[0047] Next, the inter-batch transport unit 60 receives the multiple substrates W that have been subjected to the chemical liquid treatment from the batch processing unit 30a, and transports the multiple substrates W received to the batch processing unit 30b. During this transport, the multiple substrates W are transported with the treatment liquid (chemical liquid in this case) adhering thereto. Therefore, during this transport, it is possible to suppress the collapse of the three-dimensional structure (e.g., the insulating film 91) of the substrates W caused by drying.

[0048] The plurality of substrates W transferred to the batch processing unit 30b are collectively rinsed by the batch processing unit 30b, whereby the chemical liquid adhering to each substrate W is replaced with the rinse liquid.

[0049] 1, the batch inter-single-wafer transport unit 70 is provided in the negative direction of the Y axis with respect to the batch processing unit 30b. The batch inter-single-wafer transport unit 70 receives the multiple substrates W removed from the batch processing unit 30b by the inter-batch transport unit 60, and transports each of the substrates W to the single-wafer processing unit 50 one by one.

[0050] The batch inter-wafer transfer section 70 takes out the substrates W with the rinsing liquid attached thereto from the batch inter-wafer transfer section 60. Then, the batch inter-wafer transfer section 70 transfers each of the substrates W in the horizontal position to the single wafer processing section 50, one by one.

[0051] In the example of Fig. 1, the single-wafer processing section 50 is provided in the negative direction of the Y axis relative to the batch inter-wafer transport section 70. Also, in the example of Fig. 1, a plurality of single-wafer processing sections 50 are arranged in a matrix in a plan view. As a specific example, four single-wafer processing sections 50 are arranged in a matrix of two rows and two columns. The batch inter-wafer transport section 70 transports substrates W one by one to each single-wafer processing section 50.

[0052] The single wafer processing unit 50 performs at least a drying process on the substrates W. The drying process is not particularly limited, but may be, for example, spin drying. That is, the single wafer processing unit 50 may dry the substrates W by rotating the substrates W around a rotation axis Q1 that passes through the center of the substrate W and is aligned with the Z-axis. Since the single wafer processing unit 50 dries the substrates W one by one, the substrates W can be dried with higher drying performance. Therefore, collapse of the three-dimensional structure of the substrates W caused by drying can be suppressed.

[0053] The single wafer processing section 50 may supply a rinsing liquid (pure water), IPA, or the like to the main surface of the substrate W as a process prior to the drying process.

[0054] The batch inter-substrate transport section 70 takes out the dried substrates W from each of the single substrate processing sections 50, and transports the substrates W to the indexer transport section 20 through the relay unit 12. The relay unit 12 includes a storage container (not shown) that stores the substrates W in a state in which the substrates W are aligned along the Z-axis direction.

[0055] The batch single-substrate transport section 70 transports the substrates W one by one from the single-substrate processing section 50 to the relay unit 12. With each transport, the number of substrates W stored in the relay unit 12 increases. When a predetermined number of substrates W (e.g., 25 substrates) are stored in the relay unit 12, the indexer transport section 20 removes the substrates W from the relay unit 12 all at once, and transports the substrates W to the carrier C1 of the load port 11.

[0056] <Example of operation of the substrate processing apparatus> Fig. 3 is a flow chart roughly illustrating an example of a processing step for the substrates W according to the present embodiment. As shown in the example in Fig. 3, first, a batch-type chemical liquid processing is performed on a plurality of substrates W (step ST1).

[0057] Next, a batch-type rinse process is performed on the plurality of substrates W (step ST2). As described later, the rinse process may be a single-wafer rinse process.

[0058] Next, each substrate W is subjected to a single-wafer drying process (step ST3).

[0059] The substrate W dried by the single wafer processing section 50 is transported via the batch inter-substrate transport section 70, the relay unit 12 and the indexer transport section 20 to the carrier C1.

[0060] Control of the start times of the chemical liquid processing performed sequentially in the batch processing section and control of the number of substrates W to be subjected to the chemical liquid processing in the batch processing section will be described later.

[0061] As described above, according to the substrate processing apparatus 10, the batch processor 30 can collectively process a plurality of substrates W (steps ST1 and ST2), thereby enabling the substrates W to be processed with a high throughput.

[0062] Then, since the rinse liquid remains attached to the plurality of substrates W after the batch processing, the substrates W can be prevented from drying while being transferred from the batch processing unit 30b to the single substrate processing unit 50. Therefore, the collapse of the three-dimensional structure of the substrates W caused by the drying can be prevented.

[0063] Furthermore, the substrates W are subjected to drying processing one by one by the single wafer processing unit 50 (step ST3). That is, in this embodiment, after the batch-type wet processing, a single wafer drying processing is performed instead of a batch-type drying processing. Therefore, the substrates W can be dried with high drying performance. Therefore, collapse of the three-dimensional structure of the substrates W caused by drying can be suppressed.

[0064] <Specific examples of each configuration> A specific example of each configuration of the substrate processing apparatus 10 will be described below.

[0065] <About the indexer transport section> 1, the indexer transport section 20 includes a transport robot 21. The transport robot 21 is provided so as to be movable along the Y-axis direction in the positive direction of the X-axis relative to the load port 11. The transport robot 21 can stop at a position facing each of the carriers C1 placed on the load port 11 in the X-axis direction.

[0066] 1, the transport robot 21 includes a plurality of (e.g., 25) hands 211 and an upright support member 212. The plurality of hands 211 are arranged side by side in the Z-axis direction. The transport robot 21 removes a plurality of unprocessed substrates W from the carrier C1 by moving the plurality of hands 211. As a result, one substrate W is placed on each hand 211.

[0067] Each hand 211 is provided with an upright support member 212 that supports the substrate W at its base. The upright support member 212 is provided to be movable in the X-axis direction, and moves in the negative X-axis direction with the substrate W held on the hand 211, thereby clamping the end of the substrate W in the negative X-axis direction in its thickness direction.

[0068] Here, the transport robot 21 has a posture conversion function that converts the postures of the multiple substrates W from a horizontal posture to an upright posture. Specifically, the transport robot 21 rotates the multiple hands 211 by 90 degrees around a rotation axis along the Y-axis direction. This rotation is realized, for example, by a motor or the like. As a result, the thickness direction of the substrate W is along the X-axis direction. The transport robot 21 also rotates the multiple hands 211 by 90 degrees around a rotation axis along the Z-axis direction. This rotation is also realized, for example, by a motor or the like. As a result, the thickness direction of the substrate W is along the Y-axis direction. Here, the transport robot 21 converts the posture of the substrate W so that the surface of the substrate W faces the negative direction of the Y-axis. Then, the transport robot 21 moves to the end of its movement path in the positive direction of the Y-axis while holding the multiple substrates W, and transfers the multiple substrates W to the inter-batch transport unit 60.

[0069] As described above, the indexer transport section 20 takes out a plurality of unprocessed substrates W from the carrier C1, converts the orientation of the substrates W into an upright orientation, and transports the plurality of substrates W in the upright orientation to the inter-batch transport section 60.

[0070] Furthermore, at a predetermined position on its movement path, the transport robot 21 collectively removes the plurality of processed substrates W from the relay unit 12. Then, the transport robot 21 stores the plurality of processed substrates W in the carrier C1 of the load port 11.

[0071] <About the batch processor> Next, a description will be given of the batch processing unit 30. In the example of Fig. 1, a plurality of batch processing units 30 are arranged in a line along the X-axis direction.

[0072] 4 is a diagram illustrating an example of the configuration of the batch processing unit 30. The batch processing unit 30 includes a processing tank 31 and a lifter 32. The processing tank 31 has a box shape that opens in the positive direction of the Z axis, and stores the processing liquid.

[0073] The lifter 32 includes a plurality of holding members 33 (three in the figure) that hold the plurality of substrates W in an upright position, a base 34 that supports the holding members 33, and a lifting mechanism 35 that raises and lowers the base 34. Each holding member 33 has an elongated shape extending in the Y-axis direction, and its base end in the Y-axis positive direction is attached to the base 34. A plurality of grooves (not shown) are formed in each holding member 33 in the Y-axis direction. The pitch of the grooves is equal to the pitch of the plurality of substrates W. The ends of the substrates W are inserted into the respective grooves of the holding members 33, so that the plurality of holding members 33 hold the plurality of substrates W in an upright position. The base 34 has a plate-like shape and is provided with its thickness direction aligned along the Y-axis direction. The lifting mechanism 35 raises and lowers the base 34, thereby raising and lowering the plurality of substrates W held by the holding members 33. Hereinafter, the lifting mechanism 35 may be described as the lifter 32.

[0074] The lifter 32 raises and lowers the multiple substrates W between a transfer position in the positive direction of the Z axis from the processing tank 31 and a processing position within the processing tank 31. The transfer position is a position where the multiple substrates are transferred between the lifter 32 and the inter-batch transport section 60. In the example of FIG. 4, the lifter 32 located at the transfer position is shown by a solid line. The processing position is a position where the multiple substrates W are immersed in the processing liquid. The lifter 32 moves the multiple substrates W to the processing position, whereby the multiple substrates W are processed. In the example of FIG. 4, the lifter 32 and the substrates W located at the processing position are shown typically by a two-dot chain line.

[0075] Here, the number of substrates W to be processed in the processing tank 31 is not limited to the number of substrates W corresponding to the total capacity that can be accommodated in the processing tank 31, but may be, for example, the number of substrates W corresponding to half of the total capacity that can be accommodated in the processing tank 31.

[0076] In this case, processing tank 31 may be divided into a plurality of regions, and substrate processing (including chemical processing and rinsing processing) may be performed at different start times in each region. For example, two regions may be provided in processing tank 31 of batch processing unit 30a in FIG. 1, and chemical processing may be performed in each region, while two corresponding regions may be provided in processing tank 31 of batch processing unit 30b, and rinsing processing may be performed in each region.

[0077] The batch processing unit 30 is provided with a supply unit that supplies the processing liquid to the processing tank 31, and a discharge unit that discharges the processing liquid from the processing tank 31. If necessary, the batch processing unit 30 may be provided with at least one of a gas supply unit that supplies gas to the processing liquid in the processing tank 31, and a circulation unit that returns the processing liquid that has overflowed from the positive direction of the Z axis of the processing tank 31 back to the processing tank 31.

[0078] <About the batch transfer section> The inter-batch transfer section 60 includes a transfer robot 65 and a transfer robot 66. In the example of FIG.

[0079] The holding members 611 are members that hold a plurality of upright substrates W. The holding members 611 are arranged side by side in the X-axis direction, and are attached displaceably to a base member (not shown).

[0080] The opening / closing mechanism 613 displaces the holding members 611 between their respective closed and open positions. The closed position is a position where the distance between the two holding members 611 is narrow, and the holding members 611 clamp multiple substrates W. In the example of Fig. 4, the holding members 611 positioned in the closed position are shown typically by two-dot chain lines. The open position is a position where the distance between the two holding members 611 is wider than the distance in the closed position, and the holding members 611 release their hold on multiple substrates W. The opening / closing mechanism 613 has, for example, a motor or an air cylinder.

[0081] The transport robot 65 is provided so as to be movable in the X-axis direction directly above the batch processing units 30a and 30b. The movement mechanism (e.g., a ball screw mechanism) of the transport robot 65 is provided in the Y-axis positive direction from the batch processing unit 30. The transport robot 65 receives a plurality of substrates W in an upright position from the indexer transport unit 20 (e.g., the transport robot 21) at the end of its movement path in the X-axis negative direction. Here, the transport robot 65 receives a plurality of substrates W in an upright position with the surfaces of the substrates W facing in the Y-axis positive direction. The transport robot 65 then transports the plurality of substrates W to the batch processing units 30a and 30b in that order.

[0082] The transfer robot 66 is provided so as to be movable along the X-axis direction directly above the batch processing unit 30b. The transfer robot 66 receives a plurality of substrates W in an upright position from the batch processing unit 30b, and transfers the plurality of substrates W to the batch inter-substrate transfer unit 70.

[0083] Furthermore, the transfer robot 66 receives a plurality of substrates W in an upright position from the batch processing unit 30b, and converts the position of the plurality of substrates W from the upright position to a horizontal position.

[0084] Figures 5 and 6 are diagrams illustrating an example of the configuration of the transport robot 66. Figure 5 illustrates the transport robot 66 when viewed along the Y-axis direction, and Figure 6 illustrates the transport robot 66 when viewed along the Z-axis direction.

[0085] 5 and 6, the transfer robot 66 includes a pair of holding members 661, a base 662, an opening / closing mechanism 663, and a rotating mechanism 664. The holding members 661 are members that hold a plurality of substrates W.

[0086] The holding member 661 includes a contact member 6611, a support member 6612, and a rotating member 6613. Each support member 6612 has, for example, an elongated shape that is long in the Y-axis direction, and its base end in the Y-axis positive direction is attached so as to be displaceable relative to the base 662. The two support members 6612 are provided with a gap between them in the X-axis direction.

[0087] The opening / closing mechanism 663 displaces the support members 6612 between their respective open and closed positions. The closed position is a position where the distance between the two support members 6612 is narrow, and the holding member 661 supports multiple substrates W. The open position is a position where the distance between the two support members 6612 is wide, and the holding member 661 releases its hold on the substrate W. The opening / closing mechanism 663 has, for example, a motor or an air cylinder.

[0088] Each of the rotating members 6613 is attached to the support member 6612 so as to be rotatable around a rotation axis Q5. The rotation axis Q5 is an axis along the X-axis direction. The two rotating members 6613 are provided coaxially.

[0089] Contact members 6611 are provided at ends of the rotating members 6613 that are closer to each other. That is, a contact member 6611 located in the negative X-axis direction is provided at an end of the rotating member 6613 in the negative X-axis direction in the X-axis positive direction, and a contact member 6611 located in the positive X-axis direction is provided at an end of the rotating member 6613 in the negative X-axis direction in the X-axis negative direction in the X-axis positive direction.

[0090] The contact members 6611 are displaced together with the support members 6612 and the rotating members 6613 relative to the base 662. Therefore, when the opening / closing mechanism 663 moves the support members 6612 to the closed position, the distance between the contact members 6611 becomes narrower. In this closed position, the contact members 6611 support multiple substrates W in an upright position.

[0091] In the example of FIG. 5, the contact members 6611 have an arc shape in which the distance between the contact members 6611 narrows toward the negative direction of the Z axis. In the closed position, the negative Z-axis direction portion of each contact member 6611 contacts the side surfaces of the multiple substrates W to support the multiple substrates W. In addition, multiple grooves aligned along the Y-axis direction are formed on the opposing surfaces of the contact members 6611. The pitch of the grooves is equal to the pitch of the multiple substrates W. By inserting the ends of the substrates W into the respective grooves, each substrate W is also supported in the Y-axis direction by the respective contact members 6611. This maintains the upright posture of the substrates W.

[0092] Each groove of the contact member 6611 has a shape that allows each substrate W to be pulled out in the positive direction of the Z axis from the contact member 6611. Hereinafter, the end of the contact member 6611 in the positive direction of the Z axis in the upright posture may be referred to as the access side end.

[0093] The rotation mechanism 664 rotates the rotation member 6613 90 degrees around the rotation axis Q5 relative to the support member 6612. As a result, the multiple substrates W held by the contact member 6611 also rotate 90 degrees around the rotation axis Q5, and the posture of the substrates W is converted from an upright posture to a horizontal posture. Here, the rotation mechanism 664 rotates the multiple substrates W 90 degrees so that the surface of the substrate W faces the positive direction of the Z axis and the access side end of the contact member 6611 faces the negative direction of the Y axis.

[0094] The moving mechanism 665 moves the base 662 along the X-axis direction, thereby making it possible to move the multiple substrates W held by the holding member 661 along the X-axis direction.

[0095] Here, the procedure of transport from the inter-batch transport section 60 to the inter-batch wafer transport section 70 will be described. First, the moving mechanism 665 moves the transport robot 66 to a delivery position corresponding to the batch processing section 30b. Next, the opening / closing mechanism 663 moves the holding member 661 to the open position, and the lifter 32 raises the multiple substrates W. As a result, the multiple substrates W are positioned between the two holding members 661. Next, the opening / closing mechanism 663 moves the holding member 661 to the closed position. As a result, the holding member 661 holds the multiple substrates W. Next, the lifter 32 descends to the standby position, and the rotating mechanism 664 rotates the rotating member 6613 by 90 degrees. As a result, the surfaces of the multiple substrates W face the positive direction of the Z axis, and the access side end of the holding member 661 faces the negative direction of the Y axis.

[0096] The substrate W is then transported to the batch inter-substrate transport section 70 , and the batch inter-substrate transport section 70 can further transport the substrate W in the horizontal position to each of the single substrate processing sections 50 .

[0097] <About the Single-Wafer Processing Unit> Fig. 7 is a diagram illustrating an example of the configuration of the single wafer processing unit 50. The single wafer processing unit 50 includes a substrate holding unit 51. The substrate holding unit 51 holds the substrate W in a horizontal position. In the example of Fig. 7, the substrate holding unit 51 includes a stage 511 and a plurality of chuck pins 512. The stage 511 has a disk shape, and is provided in the negative direction of the Z axis relative to the substrate W. The stage 511 is provided with its thickness direction aligned along the Z axis direction.

[0098] The multiple chuck pins 512 are provided on the main surface (i.e., the upper surface) of the stage 511 in the positive direction of the Z axis. Each chuck pin 512 is provided displaceable between a chuck position in contact with the peripheral edge of the substrate W and a release position away from the peripheral edge of the substrate W. When the multiple chuck pins 512 move to their respective chuck positions, the multiple chuck pins 512 hold the substrate W. When the multiple chuck pins 512 move to their respective release positions, the hold of the substrate W is released.

[0099] In the example of FIG. 7, the substrate holder 51 further includes a rotation mechanism 513, which rotates the substrate W around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and is along the Z-axis direction. For example, the rotation mechanism 513 includes a shaft 514 and a motor 515. The end (i.e., the upper end) of the shaft 514 in the Z-axis positive direction is coupled to the main surface (i.e., the lower surface) of the stage 511 in the Z-axis negative direction, and extends from the lower surface of the stage 511 along the rotation axis Q1. The motor 515 rotates the shaft 514 around the rotation axis Q1 to rotate the stage 511 and the multiple chuck pins 512 together. As a result, the substrate W held by the multiple chuck pins 512 rotates around the rotation axis Q1. Such a substrate holder 51 may be called a spin chuck.

[0100] The substrate holder 51 rotates the substrate W at high speed around the rotation axis Q1, thereby scattering liquid adhering to the substrate W from the periphery of the substrate W, thereby drying the substrate W (so-called spin drying).

[0101] 7, the single wafer processing unit 50 also includes a guard 52. The guard 52 has a cylindrical shape and surrounds the substrate W held by the substrate holding unit 51. The guard 52 receives liquid splashed from the periphery of the substrate W.

[0102] 7, the single-wafer processing unit 50 also includes a nozzle 53. The nozzle 53 is used to supply pure water, isopropyl alcohol, or the like to the substrate W. The nozzle 53 is provided so as to be movable between a nozzle processing position and a nozzle standby position by a moving mechanism 54. The nozzle processing position is, for example, a position facing the center of the surface of the substrate W in the Z-axis direction, and the nozzle standby position is, for example, a position radially outward from the substrate W.

[0103] The moving mechanism 54 has, for example, a mechanism such as a ball screw mechanism or an arm rotation mechanism. With the nozzle 53 positioned at the nozzle processing position, pure water, isopropyl alcohol, or the like is discharged onto the rotating substrate W. As a result, the liquid that has landed on the surface of the substrate W is subjected to centrifugal force and spreads over the entire surface of the substrate W, and is then scattered outward from the periphery of the substrate W.

[0104] <About the batch inter-sheet transport unit> In the example of FIG. 1, the batch inter-wafer transfer section 70 includes a transfer robot 74 and a transfer robot 73.

[0105] The transfer robot 74 is provided so as to be movable in the X-axis direction. The transfer robot 74 is movable to a position facing the batch processing unit 30c. The transfer robot 74 includes a hand 741, and by moving the hand 741, the transfer robot 74 takes out the substrate W in a horizontal position from the transfer robot 66.

[0106] The transport robot 74 may include multiple hands 741. In this case, the transport robot 74 may take out multiple substrates W using the hands 741. When the number of hands 741 provided is greater than or equal to the number of substrates W held by the transport robot 66, the transport robot 74 may take out all of the substrates W held by the transport robot 66.

[0107] 1, the transfer robot 73 is provided with an intermediary unit 75. The intermediary unit 75 is provided in the negative Y-axis direction relative to the transfer robot 74. The intermediary unit 75 includes a stationary storage container (not shown) that stores a plurality of horizontally oriented substrates W arranged in the Z-axis direction.

[0108] The transfer robot 74 stores the multiple substrates W in a horizontal position in a storage container of the relay unit 75 .

[0109] The transport robot 73 is provided in the negative direction of the Y axis relative to the relay unit 75. The transport robot 73 includes a hand 731, and moves the hand 731 to sequentially take out the substrates W from the relay unit 75 and transport the substrates W to each single wafer processing unit 50. The transport robot 73 may include a plurality of hands 731.

[0110] The transport robot 73 is provided so as to be movable along the Y-axis direction, and a plurality of single wafer processing units 50 are arranged side by side along the Y-axis direction on both sides of the transport path.

[0111] Furthermore, the transport robot 73 sequentially takes out the substrates W that have been dried from each single wafer processing unit 50, and transports them sequentially to the relay unit 75. As a result, all of the substrates W in the relay unit 75 will eventually be replaced with substrates W that have been dried.

[0112] The transfer robot 74 collectively takes out the plurality of dried substrates W from the relay unit 75, and transfers the plurality of substrates W to the transfer robot 21 via the relay unit 12. The transfer robot 21 then transfers the plurality of substrates W to the carrier C1.

[0113] <About the barrier> Fig. 8 is a diagram showing an example of the configuration of the transfer robot 66 and its surroundings. As shown in Fig. 8, a shielding plate 81 may be provided in the positive direction of the Z axis from the transfer robot 66 and in the negative direction of the Z axis from the fan filter unit 80. The fan filter unit 80 is provided on the upper part of the housing 100, and includes a fan and a filter (for example, a high efficiency particulate air filter (HEPA) filter) for taking in air from within the clean room and sending the air to the single-wafer processing unit 50 in the housing 100.

[0114] The shielding plate 81 is provided at a position facing the multiple substrates W held by the transport robot 66 in the Z-axis direction, and in plan view covers the multiple substrates W held by the transport robot 66. That is, the outline of the shielding plate 81 in plan view surrounds both the multiple substrates W immediately before the attitude change and the multiple substrates W immediately after the attitude change.

[0115] According to this, the airflow from the fan filter unit 80 is blocked by the shielding plate 81, so that it is possible to prevent the airflow from acting on the plurality of substrates W held by the transport robot 66. Therefore, it is possible to prevent the substrates W from drying due to the airflow, and therefore it is possible to prevent the collapse of the three-dimensional structure of the substrates W due to drying.

[0116] The shielding plate 81 may be movable integrally with the transport robot 66. For example, the shielding plate 81 may be attached to the base 662 of the transport robot 66 via a fixing member (not shown). In this way, regardless of the position of the transport robot 66, the shielding plate 81 is located directly above the multiple substrates W held by the transport robot 66, so that it is possible to reliably prevent the airflow from hitting the multiple substrates W.

[0117] Furthermore, the shielding plate 81 may be fixed so as to be immovable relative to the housing 100 of the substrate processing apparatus 10. In this case, the shielding plate 81 may be provided over the entire movement area of ​​the transfer robot 66.

[0118] In this embodiment, the function of posture change is provided in the transport robot 66, but the transport robot 74 may have the posture change function without the transport robot 66 having the posture change function, or a configuration for changing the posture (posture change unit) may be provided separately. The mechanism for changing the posture in the posture change unit can be realized by, for example, a mechanism similar to the holding member 661 in the transport robot 66.

[0119] When the posture change function is realized by the posture change section, by positioning the shielding plate 81 above the posture change section (for example, making it a lid shape that covers the upper part of the posture change section), it is possible to reliably prevent the airflow from hitting the multiple substrates W, as described above.

[0120] <Start time of chemical treatment> Below, we will explain the start time of chemical processing, so that the substrate W after chemical processing and rinsing processing in the batch processing unit 30 is transported to the single-wafer processing unit 50 while minimizing waiting time, and then dried in the single-wafer processing unit 50.

[0121] If, after substrate processing has been completed in the batch processing unit 30, the single-wafer processing unit 50 is currently processing a substrate (if multiple single-wafer processing units 50 are provided and all of them are currently processing a substrate), i.e., if there is no available single-wafer processing unit 50, the substrate W which has completed substrate processing in the batch processing unit 30 must wait at a designated location.

[0122] In this embodiment, the waiting place for such a substrate W is in the processing tank 31 of the batch processing unit 30b for a rinsing liquid. By having the substrate W wait in the processing tank 31 of the batch processing unit 30b for a rinsing liquid, the substrate W is prevented from drying during the waiting time, and therefore the pattern formed on the surface of the substrate W can be prevented from being damaged (collapsed).

[0123] Here, the following relationship holds between the substrate processing in the batch processing section 30, the substrate processing in the single wafer processing section 50, and the above-mentioned waiting time.

[0124]

number

[0125] Here, TR indicates the remaining time of the rinsing process in the batch processing unit 30b, TTL indicates the time it takes for the substrate W to move from its waiting location (in the processing tank 31 of the batch processing unit 30b in this embodiment) to the single-wafer processing unit 50, TSL indicates the longest remaining time among the substrate processing (drying process in this embodiment) in progress in the multiple single-wafer processing units 50 (if there is only one single-wafer processing unit 50, the remaining time of the substrate processing in progress in that single-wafer processing unit 50), CN indicates the rounded-up integer value of the value obtained by dividing the number of substrates W waiting at the waiting location by the number of single-wafer processing units 50 (i.e., if the decimal point is not 0, the integer part is increased by 1 and the decimal point is rounded to 0), TS indicates the time required for substrate processing (drying process in this embodiment) in each single-wafer processing unit 50, TP indicates the time required for chemical processing in the batch processing unit 30, and TD indicates the waiting time of the substrate W at its waiting location (in the processing tank 31 of the batch processing unit 30b in this embodiment). Here, the number of waiting substrates is the number of substrates W after the chemical processing and before the drying processing in the single substrate processing unit 50. In the present embodiment, the number of waiting substrates is the number of substrates W waiting in the waiting place. Fig. 9 is a conceptual diagram that shows the relationship of formula (1) in schematic form.

[0126] Here, the required time is defined as the time it takes for the substrate W waiting at the waiting location to finish the substrate processing in the single-wafer processing section 50. In the above formula (1), the sum of the left side corresponds to the required time.

[0127] In addition, in the above formula (1), CN corresponds to the number of repetitions of substrate processing required to complete processing of all substrates W distributed to the single-wafer processing units 50. In addition, although the number of single-wafer processing units 50 is four in this embodiment, the number of single-wafer processing units 50 may be one or more.

[0128] Further, the time required for the substrate W to move from the standby location to the single wafer processing section 50, TTL, also includes the time required for the transfer robot 66 to change the attitude of the substrate W.

[0129] With reference to the above formula (1), it is possible to calculate the waiting time (TD) that the substrate W waits at the waiting area after the chemical processing in the batch processing unit 30 has been completed. In other words, if the start time of the chemical processing in the batch processing unit 30 is delayed beyond the waiting time (TD) calculated with reference to the above formula (1), the required time (the sum of the left side) becomes shorter than the time (TP) required for the chemical processing in the batch processing unit 30. Therefore, the substrate W for which the chemical processing is started at the delayed timing is smoothly transported to the single wafer processing unit 50 without waiting in the batch processing unit 30b, and is dried in the single wafer processing unit 50. In other words, if the start time of the chemical processing in the batch processing unit 30 is delayed beyond the waiting time (TD) calculated with reference to the above formula (1), it is possible to at least prevent an increase in the number of substrates W waiting at the waiting area.

[0130] As described above, by delaying the start time of the chemical processing in the batch processing unit 30 for longer than the calculated waiting time (TD), the increase in the number of substrates W waiting in the waiting area can be suppressed, and the entire substrate processing performed by the batch processing unit 30 and the single-wafer processing unit 50 can be carried out efficiently.

[0131] <Number of substrates W to be treated with chemicals> Below, we will explain the number of substrates W that undergo chemical processing in order to transport the substrates W after chemical processing and rinsing processing in the batch processing unit 30 to the single-substrate processing unit 50 while minimizing waiting time, and to perform drying processing in the single-substrate processing unit 50.

[0132] As described above, the relationship shown in formula (1) holds between the substrate processing in the batch processing unit 30, the substrate processing in the single-wafer processing unit 50, and the waiting time of substrates W. However, the increase in the number of substrates W waiting in the waiting area can also be suppressed by controlling the number of substrates W undergoing chemical processing in the batch processing unit 30 (number of substrates W to be processed).

[0133] Here, if the waiting time (TD) in formula (1) is set to 0 and no substrate processing is in progress in the single wafer processing section 50, formula (1) is transformed as follows: Fig. 10 is a conceptual diagram that shows a schematic representation of the relationship in formula (2) below.

[0134]

number

[0135] Then, by calculating CN for which the above formula (2) is satisfied, it is possible to calculate the number of processed substrates W WI that can make the waiting time (TD) 0. Here, CN is the rounded-up integer value of the number of waiting substrates W divided by the number of single-wafer processing units 50, so that the approximate number of processed substrates W WI can be calculated by multiplying the calculated CN by the number of single-wafer processing units 50.

[0136] By setting the number of substrates W to be processed by the batch processing unit 30 to be equal to or less than the number of substrates WI calculated as above, the required time becomes shorter than the time required for the chemical processing in the batch processing unit 30.

[0137] As described above, by performing chemical processing in the batch processing unit 30 on substrates W up to the calculated number of substrates W to be processed WI, the increase in the number of substrates W waiting in the waiting area can be suppressed, and the entire substrate processing performed by the batch processing unit 30 and the single-substrate processing unit 50 can be carried out efficiently.

[0138] <Second embodiment> A substrate processing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0139] <Overall configuration of the substrate processing equipment> 11 is a plan view illustrating an example of the configuration of a substrate processing apparatus 10A according to the present embodiment. In FIG. 1, the Z-axis direction is the vertically upward direction. The substrate processing apparatus 10A is an apparatus for performing wet processing on substrates W.

[0140] As shown in FIG. 11, the substrate processing apparatus 10A includes a batch processing section 130 for processing a plurality of substrates W collectively, a single wafer processing section 50, an inter-batch transport section 60, and an inter-batch single wafer transport section 70.

[0141] In the example of FIG. 11, the plurality of batch processing sections 130 include a batch processing section 30a for chemical liquids and a standby batch processing section 30c.

[0142] The batch processing unit 30c includes a processing tank 31 and a lifter 32, similar to the batch processing unit 30a, but the processing tank 31 of the batch processing unit 30c does not store a chemical liquid or stores a processing liquid (e.g., phosphoric acid at room temperature) that is not reactive with the substrates W. After the chemical processing, the substrates W wait in the batch processing unit 30c until they are transported to the single substrate processing unit 50.

[0143] The inter-batch transport section 60 receives the plurality of substrates W that have been subjected to chemical liquid processing from the batch processing section 30a, and transports the received plurality of substrates W to the batch processing section 30c. During this transport, the plurality of substrates W are transported with the processing liquid (chemical liquid in this case) adhering thereto. Therefore, during this transport, it is possible to suppress the collapse of the three-dimensional structure (e.g., the insulating film 91) of the substrates W that would otherwise be caused by drying.

[0144] 11, the batch inter-single-wafer transport unit 70 is provided in the negative direction of the Y axis with respect to the batch processing unit 30c. The batch inter-single-wafer transport unit 70 receives the multiple substrates W removed from the batch processing unit 30c by the inter-batch transport unit 60, and transports each of the substrates W to the single-wafer processing unit 50 one by one.

[0145] The single-wafer processing section 50 performs rinsing and drying processes on the substrates W. As for the drying process, the single-wafer processing section 50 dries the substrates W one by one, and therefore can dry the substrates W with higher drying performance. Therefore, it is possible to suppress collapse of the three-dimensional structure of the substrates W caused by drying.

[0146] <Start time of chemical treatment> Below, we will explain the start time of chemical processing, so that the substrate W after chemical processing in the batch processing unit 130 is transported to the single-wafer processing unit 50 while minimizing waiting time, and rinsing and drying processes are performed in the single-wafer processing unit 50.

[0147] If, after substrate processing has been performed in the batch processing unit 130, the single-wafer processing unit 50 is currently processing a substrate (if multiple single-wafer processing units 50 are provided and all of them are currently processing a substrate), i.e., if there is no available single-wafer processing unit 50, the substrate W that has finished substrate processing in the batch processing unit 130 must wait at a designated location.

[0148] In this embodiment, the waiting place for such a substrate W is within the processing tank 31 of the batch processing unit 30c for a rinsing liquid. If a non-reactive chemical liquid is stored in the processing tank 31 of the batch processing unit 30c where the substrate W waits, the substrate W is prevented from drying out while waiting, and therefore the pattern formed on the surface of the substrate W can be prevented from being damaged (collapsed).

[0149] Here, the following relationship holds between the substrate processing in the batch processing section 130, the substrate processing in the single wafer processing section 50, and the above-mentioned waiting time.

[0150]

number

[0151] Here, TTL indicates the time required for a substrate W to move from its waiting location (in the processing tank 31 of the batch processing unit 30c in this embodiment) to the single-wafer processing unit 50, TSL indicates the longest remaining time among the substrate processing (rinsing and drying processes in this embodiment) in progress in the multiple single-wafer processing units 50 (if there is only one single-wafer processing unit 50, the remaining time of the substrate processing in progress in that single-wafer processing unit 50), CN indicates the rounded-up integer value of the number of substrates W waiting at the waiting location (number of waiting substrates) divided by the number of single-wafer processing units 50 (i.e., if the decimal point is not 0, the integer part is increased by 1 and the decimal point is rounded to 0), TS indicates the time required for substrate processing (rinsing and drying processes in this embodiment) in each single-wafer processing unit 50, TP indicates the time required for chemical processing in the batch processing unit 130, and TD indicates the waiting time of the substrate W at its waiting location (in the processing tank 31 of the batch processing unit 30c in this embodiment). FIG. 12 is a conceptual diagram that illustrates the relationship of formula (3).

[0152] Here, the required time, which is the time it takes for the substrate W waiting at the waiting location to finish the substrate processing in the single-wafer processing section 50, corresponds to the sum of the left side of the above formula (3).

[0153] With reference to the above formula (3), it is possible to calculate the waiting time (TD) during which the substrate W waits at the waiting location after the chemical processing in the batch processing unit 130 has been completed. Therefore, if the start time of the chemical processing in the batch processing unit 130 is delayed by at least the waiting time (TD) calculated with reference to the above formula (3), the required time (the sum of the left side) becomes shorter than the time (TP) required for the chemical processing in the batch processing unit 130. Therefore, the substrate W for which the chemical processing is started at the delayed timing is smoothly transported to the single wafer processing unit 50 without waiting in the batch processing unit 30c, and is subjected to rinsing and drying processes in the single wafer processing unit 50.

[0154] As described above, by delaying the start time of the chemical processing in the batch processing unit 130 for longer than the calculated waiting time (TD), the increase in the number of substrates W waiting in the waiting area can be suppressed, and the entire substrate processing performed by the batch processing unit 30 and the single-wafer processing unit 50 can be efficiently carried out.

[0155] <Number of substrates W to be treated with chemicals> Below, we will explain the number of substrates W that undergo chemical processing in order to transport the substrates W after chemical processing in the batch processing unit 130 to the single-substrate processing unit 50 while minimizing waiting time, and to perform rinsing and drying processes in the single-substrate processing unit 50.

[0156] As described above, the relationship shown in formula (3) holds between the substrate processing in the batch processing unit 130, the substrate processing in the single-wafer processing unit 50, and the waiting time of the substrates W. However, the increase in the number of substrates W waiting in the waiting area can also be suppressed by controlling the number of substrates W undergoing chemical processing in the batch processing unit 130 (number of substrates W to be processed).

[0157] Here, if the waiting time (TD) in formula (3) is set to 0 and no substrate processing is in progress in the single wafer processing section 50, formula (3) is transformed as follows: Fig. 13 is a conceptual diagram that illustrates the relationship of the following formula (4).

[0158]

number

[0159] By calculating CN at which the above formula (4) is satisfied, the number WI of processed substrates W at which the waiting time (TD) can be made zero can be calculated.

[0160] By setting the number of substrates W to be processed by the batch processing unit 130 to be equal to or less than the number of substrates WI calculated as above, the required time becomes shorter than the time required for the chemical processing in the batch processing unit 130.

[0161] As described above, by performing chemical processing in the batch processing unit 130 on substrates W up to the calculated number of substrates WI to be processed, the increase in the number of substrates W waiting in the waiting area can be suppressed, and the entire substrate processing performed by the batch processing unit 130 and the single-wafer processing unit 50 can be carried out efficiently.

[0162] <Effects of the above-described embodiment> Next, examples of effects produced by the above-described embodiments are shown. In the following description, the effects are described based on the specific configurations shown as examples in the above-described embodiments, but they may be replaced with other specific configurations shown as examples in the present specification as long as the same effects are produced. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0163] Furthermore, the replacement may be made across a number of embodiments, that is, configurations shown as examples in different embodiments may be combined to produce the same effect.

[0164] According to the embodiment described above, the substrate processing method for performing substrate processing using a batch processing unit 30 (or a batch processing unit 130) that performs substrate processing including chemical processing on a plurality of substrates W, and at least one single wafer processing unit 50 that performs substrate processing including drying processing on one substrate W, comprises the following steps: Calculating a required time, which is the time it takes for a substrate W to finish substrate processing in the single wafer processing unit 50, in accordance with the number of waiting substrates W that is the number of substrates W after the chemical processing in the batch processing unit 30 and before the drying processing in the single wafer processing unit 50; and Controlling the start time of the chemical processing in the batch processing unit 30 so that the required time is shorter than the time required for the chemical processing in the batch processing unit 30.

[0165] According to this configuration, by controlling the start time of the chemical treatment in the batch processing unit 30, it is possible to suppress an increase in the number of substrates W waiting to be dried in the single-wafer processing unit 50 after the chemical treatment in the batch processing unit 30 has been performed. Therefore, there is no need to separately prepare a standby tank or the like for accommodating waiting substrates W, and the entire substrate processing performed by the batch processing unit 30 and the single-wafer processing unit 50 can be efficiently performed.

[0166] Unless otherwise specified, the order in which the processes are performed may be changed.

[0167] Furthermore, even if other configurations, examples of which are shown in this specification, are appropriately added to the above configuration, i.e., other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be produced.

[0168] According to the embodiment described above, the required time includes the remaining time of the ongoing substrate processing. With this configuration, the required time can be calculated taking into account the remaining time of the ongoing cleaning and drying processes regardless of the start timing of the substrate processing in the single wafer processing unit 50, so that the calculation accuracy of the required time can be improved. Therefore, the waiting time of a substrate to be processed in the single wafer processing unit 50 after the substrate processing in the batch processing unit 30 can be shortened.

[0169] Furthermore, according to the embodiment described above, the substrate processing method includes the following steps: calculating a required time, which is the time it takes for substrates W to finish substrate processing in the single-wafer processing unit 50, in accordance with a waiting number, which is the number of substrates W after the chemical processing in the batch processing unit 30 and before the drying processing in the single-wafer processing unit 50; and changing the number of substrates W to be processed in the batch processing unit 30 so that the required time is shorter than the time required for the chemical processing in the batch processing unit 30.

[0170] According to this configuration, by changing the number of substrates processed in the batch processing unit, it is possible to prevent an increase in the number of substrates waiting to be dried in the single wafer processing unit after the chemical processing in the batch processing unit has been performed. Therefore, there is no need to prepare a separate waiting tank or the like for accommodating waiting substrates W, and the entire substrate processing performed by the batch processing unit 30 and the single wafer processing unit 50 can be performed efficiently.

[0171] According to the embodiment described above, the substrate processing method includes a step of immersing a plurality of substrates W after the chemical processing in a cleaning tank in the batch processing unit 30 to perform a cleaning process. Here, the cleaning tank corresponds to, for example, the processing tank 31 in the batch processing unit 30b. The step of calculating the required time is a step of calculating the required time including the time required for the cleaning process according to the number of substrates W waiting to be immersed in the processing tank 31 in the batch processing unit 30b. According to such a configuration, the substrates W after the chemical processing wait in the processing tank 31 in which the rinsing liquid is stored for processing in the single wafer processing unit 50, so that it is possible to prevent the substrates W from drying and the pattern formed on the surface of the substrates W from collapsing. Furthermore, since the rinsing process is performed collectively on a plurality of substrates W in the batch processing unit 30, the time required for the rinsing process is shortened, and the overall time for the substrate processing is also shortened.

[0172] Furthermore, according to the embodiment described above, the substrate processing method includes a step of performing a cleaning process on the substrate W before the drying process in the single-wafer processing section 50. According to such a configuration, since the rinsing process is performed in the single-wafer processing section 50, it is possible to perform the rinsing process with a high degree of freedom according to the properties of the substrate W and with reduced consumption of rinsing liquid.

[0173] According to the embodiment described above, the step of calculating the required time is a step of calculating the required time including the time required for the cleaning process, depending on the number of substrates W waiting before being moved from the batch processing unit 130 to the single wafer processing unit 50. According to such a configuration, the entire substrate processing performed by the batch processing unit 30 and the single wafer processing unit 50 can be efficiently carried out.

[0174] According to the embodiment described above, the chemical processing in the batch processing unit 30 is performed by immersing the substrates W in a chemical tank. Here, the chemical tank corresponds to, for example, the processing tank 31 in the batch processing unit 30a. The substrate processing method includes a step of immersing a plurality of substrates W after the chemical processing in the batch processing unit 30 in the processing tank 31 in the batch processing unit 30b to perform a cleaning process. Here, the processing tank 31 in the batch processing unit 30a includes a first region where the chemical processing is started at a first start time and a second region where the chemical processing is started at a second start time that is different from the first start time, and the processing tank 31 in the batch processing unit 30b includes a third region where the substrates W subjected to the chemical processing in the first region are cleaned, and a fourth region where the substrates W subjected to the chemical processing in the second region are cleaned. According to this configuration, the substrate processing is performed at different times in a plurality of regions in a single processing tank 31, thereby increasing the degree of freedom in the number of substrates W to be processed or the content of the substrate processing. Furthermore, since the number of substrates W for which substrate processing is completed simultaneously in the batch processing unit 30 is reduced, the maximum number of substrates W required to be processed in the single-wafer processing unit 50 is reduced. As a result, the waiting time of substrates W to be processed in the single-wafer processing unit 50 after substrate processing in the batch processing unit 30 can be effectively shortened.

[0175] Moreover, according to the embodiment described above, the required time includes the time it takes for the substrate W to move from the batch processing unit 30 to the single wafer processing unit 50. With such a configuration, the overall substrate processing performed by the batch processing unit 30 and the single wafer processing unit 50 can be efficiently carried out, taking into consideration the time required to move the substrate W from the batch processing unit 30 to the single wafer processing unit 50.

[0176] Furthermore, according to the embodiment described above, the required time includes the time required for changing the posture of the substrate W that has been processed in the batch processing unit 30 so that it can be processed in the single-wafer processing unit 50. With this configuration, the entire substrate processing performed by the batch processing unit 30 and the single-wafer processing unit 50 can be efficiently carried out, taking into consideration the time required for changing the posture from an upright posture (vertical posture) suitable for batch processing to a horizontal posture suitable for single-wafer processing.

[0177] Furthermore, according to the embodiment described above, the required time includes the time required for repeated substrate processing in one single wafer processing unit 50 when the waiting number of substrates W are distributed to a plurality of single wafer processing units 50. With such a configuration, the overall substrate processing performed by the batch processing unit 30 and the single wafer processing unit 50 can be efficiently carried out, taking into consideration the number of repeated substrate processing steps required until all of the waiting substrates W are distributed to the single wafer processing units 50 and processed.

[0178] <Modifications of the above-described embodiments> In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may be described, but these are merely examples in all respects and are not limiting.

[0179] Therefore, countless modifications and equivalents not shown as examples are assumed within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component in at least one embodiment and combining it with a component in another embodiment.

[0180] In addition, in the embodiments described above, when a material name is mentioned without being specifically specified, it is understood that the material may contain other additives, such as an alloy, unless a contradiction arises. [Explanation of symbols]

[0181] 10,10A Substrate processing equipment 11 Loading Port 12,75 Relay unit 20 Indexer transport section 21,65,66,73,74 Transport robot 30, 30a, 30b, 30c, 130 batch processing unit 31 Treatment tank 32 Lifter 33,611,661 Retaining member 34,662 base 35 Lifting mechanism 50 Single-wafer processing section 51 Board holding part 52 Guard 53 Nozzle 54,665 Moving mechanism 60 Batch transfer section 70 batch inter-sheet transfer section 80 Fan filter unit 81 Shielding plate 90 Laminated structure 91 Insulating film 92 Sacrificial membrane 93 Support layer 94 Trench 100 Case 211,731,741 hands 212 Standing support member 511 Stage 512 Chuck pin 513,664 Rotating mechanism 514 Shaft 515 Motor 613,663 Opening and closing mechanism 6611 Contact parts 6612 Support member 6613 Rotating parts

Claims

1. A substrate processing method using a batch processing section that performs substrate processing including a chemical solution processing on a plurality of substrates, and at least one single substrate processing section that performs the substrate processing including a drying processing on one of the substrates, calculating a required time, which is a time required for the substrates to finish the substrate processing in the single wafer processing section, according to a waiting number, which is the number of the substrates after the chemical processing in the batch processing section and before the drying processing in the single wafer processing section; and controlling a start time of the chemical liquid treatment in the batch processing unit so that the required time is shorter than a time required for the chemical liquid treatment in the batch processing unit. A method for processing a substrate.

2. 2. The substrate processing method according to claim 1, the required time includes the remaining time of the ongoing substrate processing; A method for processing a substrate.

3. A substrate processing method using a batch processing section that performs substrate processing including a chemical solution processing on a plurality of substrates, and at least one single substrate processing section that performs the substrate processing including a drying processing on one of the substrates, calculating a required time, which is a time required for the substrates to finish the substrate processing in the single wafer processing section, according to a waiting number, which is the number of the substrates after the chemical processing in the batch processing section and before the drying processing in the single wafer processing section; changing the number of substrates to be processed in the batch processing unit so that the required time is shorter than the time required for the chemical solution processing in the batch processing unit; A method for processing a substrate.

4. A substrate processing method according to any one of claims 1 to 3, The batch processing unit further includes a step of immersing the plurality of substrates after the chemical solution treatment in a cleaning tank to perform a cleaning process, the step of calculating the required time is a step of calculating the required time including a time required for the cleaning process according to the number of the substrates waiting to be immersed in the cleaning tank; A method for processing a substrate.

5. A substrate processing method according to any one of claims 1 to 3, The method further includes the step of performing a cleaning process on the substrate before the drying process is performed in the single wafer processing unit. A method for processing a substrate.

6. 6. The substrate processing method according to claim 5, the step of calculating the required time is a step of calculating the required time including a time required for the cleaning process in accordance with the number of the substrates waiting before being moved from the batch processing unit to the single substrate processing unit; A method for processing a substrate.

7. A substrate processing method according to any one of claims 1 to 6, the chemical treatment in the batch processing section is performed by immersing the substrate in a chemical bath; The batch processing unit further includes a step of immersing the plurality of substrates after the chemical solution treatment in a cleaning tank to perform a cleaning process, the chemical tank includes a first region in which the chemical treatment is started at a first start time, and a second region in which the chemical treatment is started at a second start time that is different from the first start time, the cleaning tank includes a third region for performing the cleaning process on the substrate that has been subjected to the chemical liquid treatment in the first region, and a fourth region for performing the cleaning process on the substrate that has been subjected to the chemical liquid treatment in the second region. A method for processing a substrate.

8. A substrate processing method according to any one of claims 1 to 7, the required time includes a time required for the substrate to move from the batch processing unit to the single wafer processing unit; A method for processing a substrate.

9. A substrate processing method according to any one of claims 1 to 8, the required time includes a time required for changing the posture of the substrate that has been subjected to the substrate processing in the batch processing unit so that the substrate can be subjected to the substrate processing in the single-wafer processing unit. A method for processing a substrate.

10. 10. A substrate processing method according to claim 1, the required time includes a time required for the substrate processing to be repeatedly performed in one of the single wafer processing units when the waiting number of substrates is distributed to the plurality of single wafer processing units, A method for processing a substrate.

Images