Mode converter, mode conversion device and optical device

Abstract

In a mode converter (12) according to the present invention, light is input from a dielectric waveguide (11) having a tapered structure, and is output to an MIM waveguide (13). The mode converter (12) comprises a substrate (10), a first metal layer (121) which is provided on the substrate, an insulation layer (122) which continuously covers a part of a side surface and a part of the upper surface of the first metal layer and a part of the upper surface of the substrate, and a second metal layer (123) which continuously covers from a part of the insulation layer which covers the upper surface of the substrate to a part of the insulation layer which covers the first metal layer, wherein: light propagates through a region of the insulation layer that is sandwiched between the first metal layer and the second metal layer; the region increases from an input part toward an output part; and on the input part side, side surfaces of the first metal layer and the insulation layer and side surfaces of the insulation layer and the second metal layer are substantially parallel to and proximal with side surfaces of the tapered structure.　Thus, the present invention can provide a mode converter in which a dielectric waveguide and an MIM waveguide can be coupled highly efficiently.

Description

[Technical field]

[0001] The present invention relates to a mode converter, a mode conversion apparatus, and an optical device having an MIM waveguide structure. [Background technology]

[0002] In recent years, efforts have been made to resolve problems such as energy consumption, heat generation, and delays in electronic circuits by integrating optical circuits. However, the optical elements in conventional optical circuits are large and consume a lot of energy, making them unsuitable for high-density integration. The energy consumption of optical elements is generally limited by their size, and miniaturization leads to lower energy consumption. Therefore, the realization of ultrasmall optical elements is the key to reducing energy consumption through the integration of optical circuits. Thus, plasmonic waveguides, whose size is not limited by the diffraction limit of light, have attracted attention.

[0003] Plasmonic waveguides are formed from one or more metal-dielectric interfaces. At metal-dielectric interfaces, light propagates as a near field, so the light confinement size decreases with size reduction even in regions below the diffraction limit. Therefore, they are expected to be a platform for efficient interaction between light and matter at nanometer scales, and nanomaterials such as nanowires and two-dimensional layered materials are attracting attention as target materials.

[0004] In particular, two-dimensional layered materials such as graphene have unique physical properties, and their introduction is expected to lead not only to reduced energy consumption and size but also to novel optical elements that go beyond the framework of existing optical elements.

[0005] On the other hand, since plasmonic waveguides have large propagation losses due to the absorption of light by metals, it is difficult to construct optical circuits using only plasmonic waveguides. Therefore, it is important to use plasmonic waveguides only in parts where interaction between nanomaterials and light is required, and to use low-loss dielectric waveguides (such as silicon waveguides) for long-distance light propagation.

[0006] Patent Document 1 discloses a highly efficient mode converter that combines a plasmonic waveguide and a dielectric waveguide, each of which has a significantly different shape and size of the propagation mode. Using this configuration, an ultrafast, low-energy all-optical switch that combines graphene and a plasmonic waveguide has been realized in a state where it is coupled to a silicon waveguide (Non-Patent Document 1). This demonstrates that the plasmonic waveguide is a suitable platform for realizing ultrafast optical elements using nanomaterials.

[0007] Previously reported plasmonic waveguide-based optical elements, including the all-optical switch mentioned above, have used lateral MIM waveguides with a metal-insulator-metal (MIM) structure in the in-plane direction (horizontal direction) of the substrate (Non-Patent Documents 1 and 2). However, in many lateral MIM waveguides, nanofabrication techniques such as resist pattern formation by electron beam lithography are used to fabricate the metal parts, and fabrication limitations make it difficult to make the width of the insulator layer that forms the waveguide core approximately 10 nm or less.

[0008] On the other hand, vertical MIM waveguides, which have an MIM structure in the direction perpendicular to the substrate surface (vertical direction), are fabricated by depositing metal, insulator, and metal films on a substrate. Using evaporation and sputtering equipment, the thickness of the deposited film can be controlled with nanometer accuracy, making it possible to fabricate very thin insulator layers, i.e., waveguide cores. In principle, it is also possible to fabricate insulator layers with a single atom's thickness using atomic layer deposition equipment and two-dimensional layered materials. Thus, extreme light confinement is expected in vertical MIM waveguides. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] JP2014-170126A [Non-patent literature]

[0010] [Non-Patent Document 1] “Ultrafast and energy-efficient all-optical switching with graphene-loaded deep-subwavelength plasmonic waveguides,” M. Ono, M. Hata, M. Tsunekawa, K. Nozaki, H. Sumikura, H. Chiba, and M. Notomi, Nature Photonics 14, 37 (2020).

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[0011] To input light into a vertical MIM waveguide in which the vibration direction of the electric field is vertical, a method has been proposed in which the TM mode in the dielectric waveguide is coupled using butt coupling (Non-Patent Document 3). In this method, the light is concentrated in the insulator layer that forms the core of the MIM waveguide, so it is necessary to prevent the light from propagating to the top surface of the upper metal layer in the MIM waveguide and to the interface between the lower metal layer and the substrate. Therefore, the dielectric waveguide must be made taller to reduce the side lobe components, and the height of the entire MIM waveguide must be made equal to or greater than the height of the dielectric waveguide.

[0012] However, it is difficult to arrange structures having the above-mentioned heights in close proximity to each other, and highly efficient mode conversion has not been achieved.

[0013] In addition, a vertical tapered structure is considered to be effective for efficiently coupling the TM mode in the vertical MIM waveguide and the dielectric waveguide.

[0014] Although the vertical taper structure itself is feasible, coupling to a dielectric waveguide is difficult and has not been realized. In addition, since its fabrication requires a complicated process, it is difficult to apply it to optical elements intended for integration (Non-Patent Document 4). [Means for solving the problem]

[0015] In order to solve the above-mentioned problems, a mode converter according to the present invention is a mode converter in which light is input from a dielectric waveguide having a tapered structure and output to an MIM waveguide, the mode converter comprising: a substrate; a first metal layer on the substrate; an insulator layer continuously covering a part of an upper surface of the substrate, at least a part of a side surface and at least a part of an upper surface of the first metal layer; and a second metal layer continuously covering from at least a part of the insulator layer covering the upper surface of the substrate to at least a part of the insulator layer covering the first metal layer, wherein light propagates through a region of the insulator layer that is sandwiched between the first metal layer and the second metal layer, and a light-transmitting portion is formed in the region. The width of the second metal layer in increases in a predetermined region from an input portion where the light is input to an output portion where the light is output, the input portion is close to the tip of the tapered structure, and the side surfaces of the first metal layer and the insulator layer on the input portion side and the side surfaces of the insulator layer and the second metal layer are each approximately parallel to and close to the side surfaces of the tapered structure. Effect of the Invention

[0016] According to the present invention, it is possible to provide a mode converter, a mode conversion apparatus, and an optical device that can couple a dielectric waveguide and an MIM waveguide with high efficiency. [Brief description of the drawings]

[0017] [Figure 1] FIG. 1 is a schematic bird's-eye view showing the configuration of a mode converter according to a first embodiment of the present invention. [Figure 2A] FIG. 2A is a schematic top view showing the configuration of a mode converter according to a first embodiment of the present invention. [Figure 2B] FIG. 2B is a schematic front cross-sectional view taken along line IIB-IIB' showing the configuration of the mode converter according to the first embodiment of the present invention. [Figure 2C] FIG. 2C is a schematic front cross-sectional view taken along line IIC-IIC' showing the configuration of the mode converter according to the first embodiment of the present invention. [Figure 2D] FIG. 2D is a schematic IID-IID' front sectional view showing the configuration of the mode converter according to the first embodiment of the present invention. [Diagram 3] FIG. 3 is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4A] FIG. 4A is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4B] FIG. 4B is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4C] FIG. 4C is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4D] FIG. 4D is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4E] FIG. 4E is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4F] FIG. 4F is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4G] FIG. 4G is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Figure 4H] FIG. 4H is a diagram illustrating the operation of the mode converter according to the first embodiment of the present invention. [Diagram 5] FIG. 5 is a schematic perspective view showing a modified example of the mode converter according to the first embodiment of the present invention. [Figure 6] FIG. 6 is a schematic perspective view showing a modified example of the mode converter according to the first embodiment of the present invention. [Figure 7] FIG. 7 is a schematic top view showing a modified example of the mode converter according to the first embodiment of the present invention. [Figure 8] FIG. 8 is a schematic top view showing an example of the configuration of an optical device according to the second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] <First embodiment> A mode converter and a mode converter device according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4H.

[0019] <Configuration of mode converter and mode conversion device> 1 and 2A , a mode converter 1 according to this embodiment includes a dielectric waveguide 11, a mode converter 12, and a MIM waveguide 13 on a substrate 10, with the dielectric waveguide 11 disposed on the input side of the mode converter 12 and the MIM waveguide 13 disposed on the output side of the mode converter 12. In this manner, light is input to the mode converter 12 from the dielectric waveguide 11 and output to the MIM waveguide 13.

[0020] Although an example in which a SiO2 substrate is used for the substrate 10 is shown, the present invention is not limited to this, and any material having a lower refractive index than the material of the dielectric waveguide 11 may be used. The substrate 10 may also be an SOI substrate or a Si substrate having SiO2 on its surface.

[0021] Light in TE mode propagates through the dielectric waveguide 11. For example, at a wavelength of 1550 nm, a Si nanowire waveguide with a core size of 400 nm wide x 200 nm high is used.

[0022] Furthermore, the dielectric waveguide 11 has a triangular tapered structure that narrows toward the tip at the end (length: several hundred nanometers) close to the mode converter 12. The tapered structure is not limited to a triangular shape, and may have a rounded tip or a trapezoidal shape with the tip serving as an end face.

[0023] The dielectric waveguide 11 is made of an optical waveguide material such as Si, SiN, TiO2, etc. An air space is provided above the dielectric waveguide 11, but a material having a lower refractive index than the material of the dielectric waveguide 11 may be used. By changing the material of the dielectric waveguide 11, the operating wavelength can be varied from visible to infrared.

[0024] In the mode converter 12 and the MIM waveguide 13, the metal layer is made of a metal that acts as a plasmonic material, such as Au, Ag, Cu, or Pt, and the insulator layer is made of an insulator, such as SiO2 or Al2O3.

[0025] The mode converter 12 has extensions 12a and 12b on both sides of the light propagation direction of a core 12c through which the light is guided. One extension 12a has, from bottom to top, a first metal layer 121 and an insulator layer 122. The other extension 12b has, from bottom to top, an insulator layer 122 and a second metal layer 123.

[0026] Moreover, an input section (hereinafter referred to as "input section") 12d of an MIM structure (described later) in the mode converter 12 is close to the tip end of the tapered structure of the dielectric waveguide 11. On the side of the input section 12d of the mode converter 12, one extension section 12a and the other extension section 12b extend so as to sandwich the dielectric waveguide 11 therebetween.

[0027] Here, one side of the tapered structure of the dielectric waveguide 11 and a side (input side) 12f of the first metal layer 121 and the insulator layer 122 in one extension portion 12a on the input portion 12d side are adjacent to each other. Similarly, the other side of the tapered structure of the dielectric waveguide 11 and a side (input side) 12g of the insulator layer 122 and the second metal layer 123 in the other extension portion 12b on the input portion 12d side are adjacent to each other.

[0028] The distance between the side surface of each tapered structure and the side surfaces 12f, 12g of the extensions 12a, 12b (hereinafter referred to as "narrow gap") is preferably 20 nm or more and 40 nm or less, and may be 1 nm or more and 100 nm or less.

[0029] In addition, the side surfaces of the tapered structures and the side surfaces 12f, 12g of the extensions 12a, 12b are substantially parallel. Here, "substantially parallel" means that light (side lobes of the guided light in the dielectric waveguide 11) can be confined in the narrow gap, and for example, the width of the narrow gap may be 10 nm on the base end side of the tapered structure and 40 nm on the tip end side.

[0030] It has been reported that a Si nanowire waveguide in which light propagates in TE mode and a horizontal MIM waveguide can be coupled with high efficiency even when the metal film is a thin film with a thickness of several tens of nanometers by using a horizontal taper structure in the Si nanowire waveguide and introducing a narrow gap between the metal layers in the MIM waveguide (Patent Document 1). Therefore, it is considered that light in TE mode propagating through the narrow gap between the side of the above-mentioned taper structure and the side surfaces 12f, 12g of the extension part can be coupled with high efficiency to a horizontal MIM waveguide structure (described later).

[0031] In the mode converter 12 and the MIM waveguide 13, for example, the thickness t1 of the first metal layer 121 is 50 nm, the thickness t2 of the insulator layer 122 is 10 nm, and the thickness t3 of the second metal layer 123 is 50 nm, but is not limited to this. It is sufficient that they can function as an MIM structure (waveguide).

[0032] In addition, the vertical (longitudinal) position of the metal layer 123 in each of the other extension portion 12b and core portion 12c of the mode converter 12 is determined by the thickness t2 of the insulator layer 122, but may be within a range that allows coupling with the optical mode in the dielectric waveguide 11.

[0033] As shown in FIGS. 2A and 2B, one extension portion 12a and the other extension portion 12b of the mode converter 12 are arranged on each side of the dielectric waveguide 11 arranged on the input portion 12d side.

[0034] In one extension portion 12a, a first metal layer 121 and an insulator layer 122 are disposed in this order on the SiO2 substrate 10. In the other extension portion 12b, an insulator layer 122 and a second metal layer 123 are disposed in this order on the SiO2 substrate.

[0035] Here, as the dielectric waveguide 11 approaches the mode converter 12, one extension portion 12a and the other extension portion 12b approach each other according to the tapered structure of the dielectric waveguide 11.

[0036] As shown in FIGS. 2A and 2C, in the mode converter 12, one extension portion 12a and the other extension portion 12b are disposed around a core portion 12c.

[0037] In detail, an insulator layer 122 is disposed continuously from the upper surface of the first metal layer 121 of one extension portion 12a to the other extension portion 12b. Furthermore, a second metal layer 123 is disposed continuously on the upper surface of the insulator layer 122 from one extension portion 12a to the other extension portion 12b.

[0038] Here, an example has been shown in which the entire upper surface of the first metal layer 121 is covered with the insulator layer 122 having a thickness of t2, but the insulator layer 122 may be disposed only on the portion sandwiched between the first metal layer 121 and the second metal layer 123. Also, an example has been shown in which the insulator layer 122 having a thickness of t2 is disposed on the entire lower surface of the second metal layer 123, but the insulator layer 122 may be disposed only on the portion sandwiched between the first metal layer 121 and the second metal layer 123.

[0039] The thickness t2 of the insulating layer 122 in one extension portion 12a, the thickness t2 of the insulating layer 122 in the other extension portion 12b, and the thickness w d may be different from each other.

[0040] Thus, in the mode converter 12, the insulator layer 122 is disposed continuously from at least a part of the upper surface of the first metal layer 121 of one extension portion 12a to at least a part of the other extension portion 12b. Furthermore, the second metal layer 123 is disposed continuously from at least a part of the one extension portion 12a to at least a part of the other extension portion 12b on at least a part of the upper surface of the insulator layer 122.

[0041] In other words, the insulator layer 122 is disposed between the side surface of the first metal layer 121 of one extension portion 12a and the second metal layer 123 of the other extension portion 12b, forming a horizontal MIM waveguide structure (hereinafter also referred to as a "horizontal MIM structure"). Here, the region of the insulator layer 122 that is sandwiched between the side surface of the first metal layer 121 and the second metal layer 123 becomes the core portion 12c.

[0042] Furthermore, an insulator layer 122 is arranged on the upper surface of the first metal layer 121 of one extension portion 12a, sandwiched between the second metal layer 123 of the other extension portion 12b, thereby forming a vertical MIM waveguide structure (hereinafter also referred to as a "vertical MIM structure").

[0043] As a result, the light propagates through the region of the insulator layer 122 that is sandwiched between the first metal layer 121 and the second metal layer 123, that is, the region where the MIM structures (horizontal MIM structure and vertical MIM structure) are formed.

[0044] Here, the region of the insulating layer 122 sandwiched between the upper surface of the first metal layer 121 and the second metal layer 123 increases in a predetermined region (length: l2) from the input portion 12d toward the output portion 12e.

[0045] For example, the width w of the second metal layer 123 arranged in the horizontal direction from the core portion 12c to one of the extension portions 12a is m is zero at the input section 12d and increases in a predetermined region (length: l2) toward the output section 12e. Here, w m may have a predetermined width other than zero. Also, in this region, the width w d may be constant or may vary.

[0046] In addition, from the end of the predetermined area (length: l2) to the output section 12e (length: l3), w m And w d is constant, and the width w of the MIM waveguide 13 is w m -w d It is.

[0047] 2A and 2D, the MIM waveguide 13 is connected to the output section 12e of the mode converter 12. The MIM waveguide 13 includes, from the bottom up, a first metal layer 121, an insulator layer 122, and a second metal layer 123, and has a width w of about 30 nm.

[0048] Thus, in the mode converter 12 according to the present embodiment, the insulator layer 122 continuously covers a part of the upper surface of the substrate 10 and a part of the side surface and a part of the upper surface of the first metal layer 121, and the second metal layer 123 continuously covers from the part of the insulator layer 122 covering the upper surface of the substrate 10 to the part of the insulator layer 122 covering the first metal layer 121. Furthermore, in the mode converter 12, the area where the insulator layer 122 is sandwiched between the first metal layer 121 and the second metal layer 123 increases in a predetermined area from the input portion 12d toward the output portion 12e, the input portion 12d is close to the tip portion of the tapered structure, and the side surfaces 12f and 12g on the input portion 12d side are approximately parallel to and close to the side surfaces of the tapered structure of the dielectric waveguide 11.

[0049] <Operation of the mode converter and the mode conversion device> The operation of the mode converter and the mode converter device according to this embodiment will be described with reference to FIGS. 3 to 4H.

[0050] 3 to 4H show calculation results of the state of light propagation in the mode converter 12. The calculations were performed using the finite element method, and the wavelength of the propagating light was set to 1550 nm.

[0051] FIG. 3 shows the light intensity distribution in a horizontal plane at the center height of the vertical MIM structure in one extension portion 12a of the mode converter 12. In FIG.

[0052] Fig. 4A shows the light intensity distribution at the cross section of the dielectric waveguide 11, and Figs. 4B to 4H show the light intensity distribution at the cross sections IVB-IVB', IVC-IVC', IVD-IVD', IVE-IVE', IVF-IVF', IVG-IVG', and IVH-IVH', respectively. In Figs. 3 to 4H, higher light intensity is displayed as white, and lower light intensity is displayed as black.

[0053] Here, the dielectric waveguide 11 has a Si thin-line waveguide with a core size of 400 nm×200 nm on a SiO 2 substrate, and the length l1 of the tapered structure at the tip is 600 nm.

[0054] The metal layers 121, 123 and insulator layer 122 in the mode converter 12 and the MIM waveguide 13 are made of Au and SiO2, respectively, and the thicknesses t1, t3 of the metal layers (Au) 121, 123 are 50 nm, and the thickness t2 of the insulator layer (SiO2) 122 is 10 nm. The width w of the MIM waveguide 13 is 30 nm. In the mode converter 12, l2 is 160 nm, and l3 is 60 nm.

[0055] The narrow gap width g between the side surface of the tapered structure of the dielectric waveguide 11 and the side surfaces 12f, 12g of the extensions 12a, 12b of the mode converter 12 is 20 nm.

[0056] As shown in FIG. 3, the light propagating through the mode converter 12 is distributed from a narrow gap adjacent to the tapered structure of the dielectric waveguide 11 through the mode converter 12 to the MIM waveguide 13 .

[0057] The light propagating in the Si nanowire waveguide of the dielectric waveguide 11 is distributed in the center of the waveguide in TE mode and has side lobes, as shown in Fig. 4A. The side lobes are coupled to the lateral MIM structure through a narrow gap, as will be described below.

[0058] Next, the light localized in the narrow gap gradually approaches the dielectric waveguide 11 due to the tapered structure (FIGS. 4B-D).

[0059] Next, the propagating light is highly efficiently coupled into the lateral MIM structure formed in the horizontal direction (lateral direction) by the first metal layer 121, the insulator layer 122, and the second metal layer 123 (FIG. 4E). Here, the height positions of the first metal layer 121 and the insulator layer 122 of one extension portion 12a and the second metal layer 123 of the other extension portion 12b are different from each other.

[0060] Next, the width w of the second metal layer 123 arranged in the horizontal direction from the core portion 12c to one of the extension portions 12a is m As the polarization direction increases, the propagating light is confined to the lateral and vertical MIM structures, the polarizations are mixed, and the polarization direction rotates (Figure 4F-G).

[0061] Finally, light is introduced into the MIM waveguide 13 (FIG. 4H). At this time, the conversion efficiency in the mode converter 12 is −2.2 dB, and high conversion efficiency is realized with a very short mode converter length.

[0062] Here, l1, l2, and l3, which determine the length of the mode converter, require a certain length for conversion. However, in a plasmonic waveguide, mode conversion is possible over a very short length, making it possible to realize a highly efficient converter that minimizes absorption by the metal.

[0063] Furthermore, the optimal values ​​of l2 and l3 of the mode converter 12 vary depending on the core size of the MIM waveguide 13 to be coupled, etc. For example, for a core of a waveguide section with t1=50 nm, t2=40 nm, and w=100 nm, the conversion efficiency is −1.7 dB when l2=160 nm and l3=180 nm.

[0064] In addition, in this embodiment, by increasing the thickness t1 of Au, it is possible to further improve the coupling efficiency, although there is a possibility that the difficulty of fabrication may increase.

[0065] As described above, in the mode converter and mode conversion device according to this embodiment, the lateral tapered structure is used to couple the TE mode light in the dielectric waveguide 11 to the lateral MIM structure of the mode converter, and the mode conversion mechanism between the lateral and vertical MIM structures converts the light into light whose electric field vibration direction is vertical. This light is introduced with high efficiency into the vertical MIM waveguide.

[0066] <Variation 1> A mode converter 1_2 according to this modification includes a dielectric waveguide 11, a mode converter 12_2, and an MIM waveguide 13, as shown in FIG.

[0067] In the mode converter 12_2, the second metal layer 123_2 on the surface of the other extension portion 12b does not have a step. Also, the insulator layer 122_2 is disposed only directly below the second metal layer 123_2 in one extension portion 12a. Here, the insulator layer 122_2 may extend up to above the first metal layer 121_2. The other configurations are the same as those of the first embodiment.

[0068] In the mode converter 12_2, when t1=50 nm, t2=10 nm, and w=30 nm, the coupling efficiency is −1.8 dB, and further improvement in efficiency is possible.

[0069] <Variation 2> 6, a mode converter 1_3 according to this embodiment includes a dielectric waveguide 11, a mode converter 12, and an MIM waveguide 13, and the dielectric waveguide 11 is embedded in a groove structure 14 of a SiO2 substrate 10. The other configurations are the same as those of the first embodiment.

[0070] For example, a structure in which the dielectric waveguide 11 is embedded in a groove structure 14 is formed by depositing SiO2 on the SiO2 substrate 10 around the dielectric waveguide 11 after placing the dielectric waveguide 11 on the SiO2 substrate 10. Then, a mode converter 12 and an MIM waveguide 13 are formed on the deposited SiO2, and a mode converter 1_3 is fabricated.

[0071] The propagation mode of the dielectric waveguide 11 has a strong electric field near the center of the waveguide core. Therefore, with this configuration, the positions of the first metal layer 121 of one extension portion 12a and the second metal layer 123 of the other extension portion 12b in the vertical direction (longitudinal direction) on the input portion 12d side of the mode converter 12 are close to the center of the dielectric waveguide 11, which is expected to further improve the coupling efficiency.

[0072] Furthermore, since flatness is improved by embedding the dielectric waveguide 11, it is possible to improve the accuracy and simplify the process for fabricating the MIM waveguide 13 and the mode converter 12 after fabricating the dielectric waveguide 11. Furthermore, by increasing the embedded portion and improving the flatness, further effects are achieved.

[0073] <Modification 3> 7, a mode converter 1_4 according to this embodiment includes a dielectric waveguide 11, a mode converter 12, and an MIM waveguide 13, and includes a size reduction mechanism 15 between an output section 12e of the mode converter 12 and the MIM waveguide 13. The other configurations are the same as those of the first embodiment.

[0074] In the size reduction mechanism 15 , the waveguide width is narrower than the width of the waveguide (light propagation region) at the output portion 12 e of the mode converter 12 and the width of the waveguide of the MIM waveguide 13 .

[0075] With this configuration, the electric field is concentrated in the region where the light propagates, and the electric field enhancing effect can be further improved.

[0076] <Second embodiment> An optical device according to a second embodiment of the present invention will be described with reference to FIG.

[0077] <Optical device configuration> The optical device according to the present embodiment includes a dielectric waveguide, a mode converter, and a MIM waveguide, and the MIM waveguide includes an optical functional device. The other configurations are the same as those of the first embodiment.

[0078] Optical functional devices are ultra-small optical functional devices, and for example, light-emitting elements, optical switches, optical modulators, optical receivers, etc. are constructed by embedding optical functional materials (gain media, absorption media, optical nonlinear media, electro-optical effect media, etc.) inside the core (insulator layer) of an MIM waveguide.

[0079] In the mode converter according to the first embodiment, the thickness of the core (insulator layer) in the vertical MIM waveguide can be made thin, so that light is strongly confined in the core and the interaction between light and matter is greatly enhanced. In particular, by making the core thickness between the thickness of a single atom and about 10 nm, the interaction between light and matter is further greatly enhanced.

[0080] Therefore, by using the mode converter of the first embodiment as a platform and using its configuration in an optical device, the mode converter can introduce light into the vertical MIM waveguide with high efficiency, thereby enabling strong interaction between light and the optically functional material in the MIM waveguide.

[0081] The substance to be interacted with may be, for example, a nanomaterial. Alternatively, the insulator of the core may be replaced directly with an optically functional substance, or an optically functional substance may be sandwiched between a metal and an insulator.

[0082] If the element structure of the optical device according to this embodiment is made the same as the structure in the first embodiment (eg, FIG. 1), it can be used in optical devices that only require optical input or optical output.

[0083] Furthermore, if the element structure of the optical device 2 is configured as shown in Figure 8, in which the dielectric waveguide 21_1, the mode converter 22_1, the MIM waveguide 23_1, the MIM waveguide 23_2, the mode converter 22_2, and the dielectric waveguide 21_2 are connected in this order, the optical device can be used in optical devices such as optical switches that require optical input and output.

[0084] In addition, since the distance between the two metals that make up the MIM waveguide can be made very short, it is possible to obtain a large electric field effect, which can be utilized to create optical functional devices.

[0085] Furthermore, it is possible to introduce complex structures into the core of the MIM waveguide: after depositing the lower metal layer of the vertical MIM waveguide, an optical element is formed on top of it, and then an upper metal layer is deposited on top of that, allowing a structure directly coupled to the MIM waveguide to be realized.

[0086] As described above, in the optical device according to the present embodiment, the interaction between the optical functional substance and light is enhanced, so that the performance of optical devices such as light-emitting elements, optical switches, optical modulators, and optical receivers can be improved.

[0087] In the embodiment of the present invention, an example has been shown in which the same metal layer is used for the upper metal layer (second metal layer) and the lower metal layer (first metal layer) in the mode converter and the MIM waveguide, but this is not limiting and different metal layers may be used. It is sufficient that the output part of the mode converter and the input part of the MIM waveguide are optically coupled.

[0088] In the embodiment of the present invention, the upper part, which was previously an air space, may be covered with a low refractive index material such as SiO2, which can suppress deterioration of the material due to oxidation, etc. Furthermore, the insulator layer in the MIM waveguide can be replaced with a general semiconductor such as Si, Ge, or InP, and it can also be expanded for use in a metal-dielectric-metal (MDM) waveguide.

[0089] In the embodiments of the present invention, examples of the structure, dimensions, materials, etc. of each component in the configurations and manufacturing methods of the mode converter, mode converter, and optical device are shown, but the present invention is not limited to these. Anything that can exert the functions and effects of the mode converter, mode converter, and optical device may be used. [Industrial Applicability]

[0090] The present invention can be applied to optical integrated circuits used in optical communication systems and optical computers. [Explanation of symbols]

[0091] 1 Mode conversion device 11 Dielectric Waveguide 12 Mode converter 12a One extension 12b The other extension 121 First metal layer 122 Insulator Layer 123 Second Metal Layer 13 MIM waveguide

Claims

1. 1. A mode converter in which light is input from a dielectric waveguide having a tapered structure and output to an MIM waveguide, A substrate; a first metal layer on the substrate; an insulating layer continuously covering a portion of the upper surface of the substrate and at least a portion of the side surface and upper surface of the first metal layer; a second metal layer continuously covering at least a portion of the insulating layer covering the upper surface of the substrate to at least a portion of the insulating layer covering the first metal layer; Equipped with light propagates through a region of the insulator layer that is sandwiched between the first metal layer and the second metal layer; a width of the second metal layer in the region increases in a predetermined region from an input portion where the light is input toward an output portion where the light is output, the input portion is adjacent to a tip portion of the tapered structure, A side surface between the first metal layer and the insulator layer on the input section side and a side surface between the insulator layer and the second metal layer are approximately parallel to and close to a side surface of the tapered structure. A mode converter comprising:

2. light propagating through the dielectric waveguide propagates between a side surface of the tapered structure and a side surface of the first metal layer and the insulator layer and a side surface of the insulator layer and the second metal layer at the input portion side, coupling to a lateral MIM structure at the input portion; The vibration direction of the electric field is converted into vertical light from the input section to the output section.

2. The mode converter according to claim 1 .

3. The surface of the second metal layer is flat.

3. The mode converter according to claim 1 or 2.

4. A mode converter according to any one of claims 1 to 3; The dielectric waveguide; The MIM waveguide; A mode conversion device comprising:

5. a size reduction mechanism between the output of the mode converter and the MIM waveguide; The width of the size reduction mechanism is narrower than the width of the waveguide at the output portion and the width of the MIM waveguide.

5. The mode conversion device according to claim 4.

6. On a substrate having a groove structure, The mode converter; The dielectric waveguide; The MIM waveguide; Equipped with The dielectric waveguide is disposed in the groove structure.

6. The mode conversion device according to claim 4 or 5.

7. The mode conversion device according to any one of claims 4 to 6. An optical device comprising:

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