Field effect transistor, its manufacturing method, and electronic circuit

Abstract

To provide a field effect transistor which reduces manufacturing processes of a second field plate.SOLUTION: In a field effect transistor, a source-drain metal layer 7 includes a source 71, a drain 72, and a field plate 73 electrically connected to the source. The field plate extends from the source to one side of the drain and is disposed to be disconnected from the drain. The field plate includes a first-order field plate 731 and a second-order field plate 732 whose orthographic projections on a substrate 1 are located between a metal gate 51 and the drain. The second-order field plate covers a step 52, and the first-order field plate is a part other than the second-order field plate. A pattern of the step is formed while a pattern of the metal gate is formed on the gate metal layer, so that the part covering the step at the source-drain metal layer is raised to form the second-order field plate.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] This application relates to the field of semiconductor technology, and in particular to field effect transistors, methods of manufacture thereof, and electronic circuits. [Background technology]

[0002] Gallium nitride (GaN) has advantages such as a large band gap and high mobility. Therefore, GaN is widely used as a substrate material in the field of power devices. In the field of power devices, GaN is most widely used in high electron mobility transistors (HEMTs). In high-power high-voltage HEMT devices, in order to increase the voltage strength of the gate, the metal at the source end is usually drawn out to form a field plate by bypassing the gate, so as to improve the vertical electric field strength distribution between the gate and drain so that the gate is protected. Currently, in the industry, a structure of two field plates is used for devices with voltages higher than 600V. The two field plates are placed at a specific position between the gate and drain. After being connected to the low potential of the source, the field plates use the high voltage of the drain to form an electric field gradient distribution to further protect the gate. Although the existing dual field plate structure can electrically protect the gate, multiple processes are added to form the secondary field plate, which makes the process flow complicated. Summary of the Invention

[0003] This application provides a field effect transistor, a manufacturing method thereof, and an electronic circuit for reducing the manufacturing process of a secondary field plate.

[0004] According to a first aspect, the application provides a field effect transistor including a channel layer on a substrate, a control gate on the channel layer, a passivation layer on the control gate, a gate metal layer on the passivation layer, an interlayer dielectric layer on the gate metal layer, and a source-drain metal layer on the interlayer dielectric layer. The passivation layer includes a gate opening exposing the control gate. The gate metal layer includes a metal gate and a step disposed at intervals. The metal gate is electrically connected to the control gate through the gate opening. A source opening and a drain opening are located on either side of the metal gate, respectively, passing through the interlayer dielectric layer and the passivation layer. An orthogonal projection of the step onto the substrate is located between the drain opening and the metal gate. The source-drain metal layer includes a source and a drain located on either side of the metal gate, respectively, and a field plate electrically connected to the source. The source is electrically connected to the channel layer through the source opening, and the drain is electrically connected to the channel layer through the drain opening. The field plate is disposed so as to extend from the source to one side of the drain and be separated from the drain. The orthogonal projection of the field plate onto the substrate has an overlapping region with the step. The field plate specifically includes a primary field plate and a secondary field plate whose orthogonal projections onto the substrate are located between the metal gate and the drain. The secondary field plate is the portion covering the step, and the primary field plate is the portion other than the secondary field plate.

[0005] According to the field effect transistor provided in this embodiment of the present application, a pattern of a metal gate is formed in the gate metal layer while a pattern of a step is also formed, so that the part of the source-drain metal layer covering the step is raised to form a secondary field plate, and a height difference is formed between the part not raised by the step and the secondary field plate, and the part not raised by the step forms a primary field plate. Thus, the patterning process only needs to be performed once to process the entire field plate. In other words, the entire field plate is formed by performing each of metal deposition, photo-etching, and etching once. Therefore, the complexity and industrial cost of the manufacturing process of the field plate are reduced.

[0006] In one possible implementation of this application, the field effect transistor may further include a planar layer located on the source-drain metal layer, and a connection metal layer located on the planar layer. The planar layer includes a source connection hole and a drain connection hole. The source connection hole and the drain connection hole are typically filled with a conductive material, such as tungsten. The through-hole depths of the source connection hole and the drain connection hole are the same. This helps to control the through-hole etching process of the planar layer. The connection metal layer includes a source connection pad and a drain connection pad. The source connection pad is electrically connected to the source through the source connection hole, and the drain connection pad is electrically connected to the drain through the drain connection hole.

[0007] In one possible implementation of this application, a control gate and a metal gate form a gate structure. The control gate can be a stacked structure, specifically including a PGaN layer located on the channel layer and a TiN layer located on the PGaN layer. The orthogonal projection of the TiN layer onto the substrate can be within the PGaN layer. Specifically, the TiN layer and the PGaN layer can be formed by a single patterning process, and then the pattern of the TiN layer can be selectively shrunk based on device design requirements, so that the size of the pattern of the TiN layer is smaller than that of the PGaN layer.

[0008] In one possible implementation of this application, the control gate may instead be a single layer structure, specifically including a PGaN layer. A TiN layer is disposed between the passivation layer and the gate metal layer. The control gate, the TiN layer, and the metal gate form a gate structure. After the passivation layer is fabricated, a TiN film and a gate metal film are grown directly on the passivation layer, and then a patterning process is performed once to form a pattern of the TiN layer and the gate metal layer, such that the orthogonal projection of the TiN layer on the substrate coincides with the gate metal layer. In this case, the pattern of the TiN layer is present under both the step and the metal gate.

[0009] In one possible implementation of this application, the layout can be defined and the etching process adjusted so that the sidewall of the step on the side facing the metal gate can be perpendicular to the surface of the passivation layer and the cross section of the step resembles a rectangle, in other words, when patterning is performed on the gate metal layer, the cross section forming the pattern is perpendicular to the surface of the passivation layer.

[0010] In one possible implementation of this application, in order to optimize the electric field distribution between the gate and the drain, the layout can be defined and the etching process can be adjusted so that the sidewall of the step facing the metal gate is inclined towards the drain, the included angle θ between the sidewall of the step facing the metal gate and the surface of the step facing the passivation layer is less than 90 degrees, and the cross section of the step resembles a trapezoid.

[0011] In one possible implementation of this application, there may be one step and one secondary field plate, and the orthogonal projection of the primary field plate onto the substrate may be located between the secondary field plate and the metal gate, which helps to create a field gradient distribution between the gate structure and the drain to further protect the gate structure.

[0012] In one possible implementation of this application, the secondary field plate can be arranged to be separated from the primary field plate. In other words, the two field plate structures are separated, and the primary field plate is directly drawn from the source. To ensure that the secondary field plate receives an electrical signal from the source, a secondary field plate connection hole can be further disposed in the planar layer, through which the source connection pad is electrically connected to the secondary field plate. In other words, the secondary field plate receives an electrical signal from the source by using the source connection pad.

[0013] In one possible implementation of this application, the step may be a discontinuous structure. In other words, the step may be distributed into multiple sections, so that multiple secondary field plates can exist. Also, the multiple secondary field plates may be made to conduct with each other by using the primary field plate. Alternatively, the secondary field plates may be separated from each other. Alternatively, some of the secondary field plates may be made to conduct with each other by using the primary field plate, and other parts of the secondary field plates may be separated from each other. This is not limited here. Note that the secondary field plate separated from the primary field plate needs to be electrically connected to the source connection pad through the secondary field plate connection hole.

[0014] In one possible implementation of this application, discontinuous steps in a first direction may be formed by adjusting the layout of the gate metal layer such that the secondary field plates are arranged only in a first direction, which is the direction in which the source points to the drain. Alternatively, discontinuous steps in a second direction may be formed by adjusting the layout of the gate metal layer such that the secondary field plates are arranged only in a second direction perpendicular to the first direction. Alternatively, discontinuous steps in both the first and second directions may be formed by adjusting the layout of the gate metal layer such that the secondary field plates are arranged in both the first and second directions, i.e., the secondary field plates may be considered to be arranged in an array.

[0015] According to a second aspect, an embodiment of the present application provides a method for manufacturing a field effect transistor, the method including: first, sequentially forming a channel layer, a control gate, and a passivation layer on a substrate, the passivation layer including a gate opening exposing the control gate; forming a gate metal layer on the passivation layer, the gate metal layer including spaced apart metal gates and steps, the metal gate being electrically connected to the control gate through the gate opening; forming an interlayer dielectric layer on the gate metal layer, the interlayer dielectric layer and the passivation layer being etched to form a source opening and a drain opening respectively located on either side of the metal gate, an orthogonal projection of the step onto the substrate being between the drain opening and the metal gate; and forming a source-drain metal layer on the interlayer dielectric layer, the source-drain metal layer including a source and a drain respectively located on either side of the metal gate and a field plate electrically connected to the source, the source being electrically connected to the channel layer through the source opening, and the drain being electrically connected to the channel layer through the drain opening. The field plate is positioned to extend from the source to one side of the drain and be separated from the drain. An orthogonal projection of the field plate onto the substrate has an overlapping region with both the metal gate and the step. The field plate includes a primary field plate and a secondary field plate whose orthogonal projections onto the substrate are located between the metal gate and the drain. The secondary field plate is the portion covering the step and the primary field plate is the portion other than the secondary field plate.

[0016] According to the manufacturing method provided in this embodiment of the present application, a pattern of a metal gate is formed in the gate metal layer while a pattern of a step is also formed, so that the portion of the source-drain metal layer covering the step is raised to form a secondary field plate, and a height difference is formed between the portion not raised by the step and the secondary field plate, and the portion not raised by the step forms a primary field plate. Thus, the patterning process only needs to be performed once to process the entire field plate. In other words, the entire field plate is formed by performing each of metal deposition, photo-etching, and etching once. Therefore, the complexity and industrial cost of the manufacturing process of the field plate are reduced.

[0017] In one possible implementation of this application, the method may further include forming a planar layer on the source-drain metal layer, the planar layer including a source contact hole and a drain contact hole, the through-hole depths of the source contact hole and the drain contact hole being the same to help control a through-hole etching process of the planar layer; and finally, forming a connection metal layer on the planar layer, the connection metal layer including a source contact pad and a drain contact pad, the source contact pad being electrically connected to the source through the source contact hole, and the drain contact pad being electrically connected to the drain through the drain contact hole.

[0018] In one possible implementation of this application, the layout can be defined and the etching process adjusted so that the sidewall of the step facing the metal gate can be perpendicular to the surface of the passivation layer, and the cross section of the step resembles a rectangle. Alternatively, the sidewall of the step facing the metal gate is inclined toward the drain, and the included angle θ between the sidewall of the step facing the metal gate and the surface of the step facing the passivation layer is less than 90 degrees, and the cross section of the step resembles a trapezoid. The distance between the step and the drain formed is generally greater than 0.5 μm.

[0019] In one possible implementation of this application, one or more secondary field plates may be formed based on the location and number of steps that are placed. If there is one step and one secondary field plate, the orthogonal projection of the primary field plate onto the substrate may be located between the secondary field plate and the metal gate. If there are multiple steps and multiple secondary field plates, the multiple secondary field plates may be arranged in a first direction and / or a second direction. The first direction is the direction in which the formed source points to the drain, and the second direction is perpendicular to the first direction.

[0020] In one possible implementation of this application, the secondary field plate can be arranged to be separated from the primary field plate. In other words, the two field plate structures are separated, and the primary field plate is directly drawn from the source. To ensure that the secondary field plate receives an electrical signal from the source, a secondary field plate connection hole can be further disposed in the planar layer, through which the source connection pad is electrically connected to the secondary field plate. In other words, the secondary field plate receives an electrical signal from the source by using the source connection pad.

[0021] In one possible implementation of this application, the control gate can include a PGaN layer and a TiN layer, and the PGaN layer is located between the TiN layer and the channel layer. The pattern of the PGaN layer and the TiN layer can be formed by performing a patterning process once. For example, the PGaN film and the TiN film can be grown on the channel layer, and then the PGaN film and the TiN film are etched, and the remaining PGaN layer and the TiN layer are used as the control gate. Also, a lateral size shrink process can be selectively performed on the TiN layer based on requirements.

[0022] In one possible implementation of this application, when the control gate includes only a PGaN layer, before the gate metal layer is deposited, a TiN layer can be further formed on the passivation layer independent of the gate metal layer, and then a patterning process can be performed once to form the TiN layer and the gate metal layer with the same pattern.

[0023] According to a third aspect, the application provides an electronic circuit, the electronic circuit including a circuit board and a field effect transistor provided in a respective implementation of the first aspect of the application disposed on the circuit board. [Brief description of the drawings]

[0024] [Figure 1a] FIG. 1 is a schematic diagram of a cross-sectional structure of a field effect transistor having dual field plates in the existing technology. [Figure 1b] FIG. 1 is a schematic diagram of a cross-sectional structure of another field effect transistor having dual field plates in the existing technology. [Diagram 2] FIG. 1 is a schematic diagram of a cross-sectional structure of a field effect transistor according to an embodiment of the present application. [Diagram 3] FIG. 2 is a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of the present application. [Figure 4] FIG. 2 is a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of the present application. [Diagram 5] FIG. 2 is a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of the present application. [Figure 6] FIG. 2 is a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of the present application. [Figure 7] FIG. 1 is a schematic diagram of a top-down structure of a field effect transistor according to one embodiment of the present application. [Figure 8] FIG. 2 is a schematic diagram of a top-down structure of another field effect transistor according to an embodiment of the present application. [Figure 9]FIG. 2 is a schematic diagram of a top-down structure of another field effect transistor according to an embodiment of the present application. [Figure 10] 1 is a schematic flow chart of a method for manufacturing a field effect transistor according to an embodiment of the present application. [Figure 11a] 11a and 11b are schematic diagrams of a structure after completing each step of the manufacturing method according to one embodiment of the present application. [Figure 11b] 11a and 11b are schematic diagrams of a structure after completing each step of the manufacturing method according to one embodiment of the present application. [Explanation of symbols]

[0025] 1: substrate; 2: channel layer; 3: control gate; 30: gate structure; 31: PGaN layer; 32: TiN layer; 4: passivation layer; 41: gate opening; 5: gate metal layer; 51: metal gate; 52: step; 6: interlayer dielectric layer; 61: source opening; 62: drain opening; 7: source-drain metal layer; 71: source; 72: drain; 73: field plate; 731: primary field plate; 732: secondary field plate; 8: planar layer; 81: source connection hole; 82: drain connection hole; 83: secondary field plate connection hole; 9: connection metal layer; 91: source connection pad; 92: drain connection pad; X: first direction; Y: second direction. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] In order to make the objectives, technical solutions and advantages of the present application clearer, the following further describes the present application in detail with reference to the accompanying drawings.

[0027] The AlGaN / GaN heterojunction HEMT structure based on GaN material has excellent properties, such as high electron mobility, high 2DEG surface density, high chemical stability, high frequency, and high power, and therefore devices fabricated with GaN material have obvious advantages in both radio frequency and power electronics fields. Therefore, the field effect transistor provided in the embodiments of this application can be widely used as a component of electronic circuits in various scenarios. For example, the field effect transistor is widely used in 5th generation of wireless communications technologies (5G) wireless communication base stations, power electronics components, and the like in the fields of information transmission and reception, energy conversion, and high frequency switches.

[0028] A GaN field effect transistor mainly includes a channel layer, a source, a drain, and a gate. When a GaN field effect transistor is used, the conduction between the source and the drain is controlled by the gate voltage. However, since GaN material does not have a self-supporting substrate, GaN material usually needs to be fabricated on a Si substrate using an epitaxial growth method. However, there is a large lattice mismatch and thermal mismatch between GaN and Si, so there are a large number of defects in the epitaxial material of GaN. These defects trap electrons. This causes a decrease in carrier concentration in the operating state of the device. As a result, a "current collapse" effect occurs in the device. In other words, the dynamic on-resistance increases. As a result, the operating stability of the system is affected.

[0029] Currently, step-tended source field plates (also called field plates) have been introduced in the related art to reduce the increase in dynamic on-resistance of the device under high voltages against the "current collapse" effect of GaN field effect transistors. Generally, the metal at the source end is brought out to bypass the gate to form a field plate, so as to improve the vertical electric field strength distribution between the gate and drain. Thus, the gate is protected. Currently, in the industry, a structure of two field plates is commonly used for devices with voltages higher than 600V. The two field plates are located at specific positions between the gate and drain. After being connected to the low potential of the source, the field plates form an electric field gradient distribution with the high voltage of the drain to further protect the gate.

[0030] See FIG. 1a. In the existing dual field plate structure, after the gate structure 30 is fabricated by performing the mask process three times, the interlayer dielectric layer 6 is deposited and an ohmic contact hole (including the source opening 61 and the drain opening 62) is opened in the interlayer dielectric layer 6. When the deposition on the source-drain metal layer 7 (which can also be called an ohmic metal layer) is performed, the primary field plate 731 is formed by bypassing a part of the gate structure 30. In other words, the primary field plate 731, the source 71, and the drain 72 are formed at the same time, and the secondary field plate 732 needs to be formed using photo-etching and etching processes after an additional layer of metal is deposited. The two field plates 73 are directly electrically connected to the source 71, and the processing of the entire field plate 73 requires that the metal deposition, photo-etching, and etching are each performed twice, and the deposition of the dielectric between these field plates is performed once.

[0031] See FIG. 1b. In other existing dual field plate structures, the processing of gate structure 30 and primary field plate 731 is completely consistent with the structure shown in FIG. 1a, and secondary field plate 732 also requires the deposition of an additional layer of metal before being formed using photoetching and etching processes. The difference is that primary field plate 731 is directly electrically connected to source 71, and secondary field plate 732 is electrically connected to source connection pad 91 through secondary field plate connection hole 83. The processing of the entire field plate 73 also requires the metal deposition, photoetching, and etching to be performed twice, and the deposition of dielectric between these field plates to be performed once.

[0032] Please refer to Figures 1a and 1b. Although the existing dual field plate structure can electrically protect the gate structure 30, multiple processes are added to form the secondary field plate 732, which complicates the process flow. In addition, the thickness of the planar layer 8 is different at various positions. In the dual field plate structure shown in Figure 1a, the source contact hole 81 and the drain contact hole 82 in the planar layer 8 have different depths. In the dual field plate structure shown in Figure 1b, the secondary field plate contact hole 83 and the source contact hole 81 have different depths. This makes it difficult to control the through-hole etching process.

[0033] Therefore, an embodiment of the present application provides a field effect transistor, a method for manufacturing the field effect transistor, and an electronic circuit, which can reduce the secondary field plate manufacturing process. Hereinafter, the field effect transistor will be described in detail with reference to the accompanying drawings and embodiments.

[0034] The terms used in the following embodiments are merely intended to describe certain embodiments and are not intended to limit this application. When used in the specification and appended claims of this application, the singular forms "a," "an," "an," "the," "above," "the," and "this" are also intended to include, for example, "one or more," unless the context clearly indicates otherwise.

[0035] References in this specification to "one embodiment," "some embodiments," or the like are intended to indicate that one or more embodiments of this application include a particular feature, structure, or characteristic that is described with reference to the embodiment. Thus, the appearances of phrases such as "in one embodiment," "in some embodiments," "in some other embodiments," and "in further some other embodiments" in various places in this specification are not necessarily all referring to the same embodiment, and all mean "one or more, but not all," unless expressly emphasized otherwise. The terms "including," "having," "having," and variations thereof all mean "including, but not limited to," unless expressly emphasized otherwise.

[0036] FIG. 2 is an example of a schematic diagram of a cross-sectional structure of a field effect transistor according to an embodiment of this application. Please refer to FIG. 2. In an embodiment of this application, the field effect transistor may include a channel layer 2 on a substrate 1, a control gate 3 on the channel layer 2, a passivation layer 4 on the control gate 3, a gate metal layer 5 on the passivation layer 4, an interlayer dielectric layer 6 on the gate metal layer 5, and a source-drain metal layer 7 on the interlayer dielectric layer 6. The passivation layer 4 includes a gate opening 41 exposing the control gate 3. The gate metal layer 5 includes a metal gate 51 and a step 52 spaced apart from each other. The metal gate 51 is electrically connected to the control gate 3 through the gate opening 41. A source opening 61 and a drain opening 62 passing through the interlayer dielectric layer 6 and the passivation layer 4 are located on both sides of the metal gate 51, respectively. An orthogonal projection of the step 52 onto the substrate 1 is located between the drain opening 62 and the metal gate 51. The source-drain metal layer 7 includes a source 71 and a drain 72 located on both sides of the metal gate 51, respectively, and a field plate 73 electrically connected to the source 71. The source 71 is electrically connected to the channel layer 2 through the source opening 61, and the drain 72 is electrically connected to the channel layer 2 through the drain opening 62. The field plate 73 is arranged so as to extend from the source 71 to one side of the drain 72 and be separated from the drain 72. The orthogonal projection of the field plate 73 onto the substrate 1 has an overlapping region with the step 52. The field plate 73 specifically includes a primary field plate 731 and a secondary field plate 732, and the orthogonal projections of these onto the substrate 1 are located between the metal gate 51 and the drain 72. The secondary field plate 732 is a portion covering the step 52, and the primary field plate 731 is a portion other than the secondary field plate 732.

[0037] According to the field effect transistor provided in this embodiment of the present application, by forming a pattern of the metal gate 51 in the gate metal layer 5 while also forming a pattern of the step 52, the part of the source-drain metal layer 7 covering the step 52 is raised to form the secondary field plate 732, and a height difference is formed between the part not raised by the step 52 and the secondary field plate 732, and the part not raised by the step 52 forms the primary field plate 731. Thus, the processing of the entire field plate 73 only requires the patterning process to be performed once. In other words, the entire field plate is formed by performing each of the metal deposition, photo-etching, and etching once. Therefore, the complexity and industrial cost of the manufacturing process of the field plate 73 are reduced.

[0038] Please refer to FIG. 2 again. In this embodiment of the present application, the field effect transistor may further include a planar layer 8 located on the source-drain metal layer 7, and a connection metal layer 9 located on the planar layer 8. The planar layer 8 includes a source connection hole 81 and a drain connection hole 82. The source connection hole 81 and the drain connection hole 82 are usually filled with a conductive material, such as tungsten. The through-hole depths of the source connection hole 81 and the drain connection hole 82 are the same. This helps to control the through-hole etching process of the planar layer 8. The connection metal layer 9 includes a source connection pad 91 and a drain connection pad 92. The source connection pad 91 is electrically connected to the source 71 through the source connection hole 81, and the drain connection pad 92 is electrically connected to the drain 72 through the drain connection hole 82.

[0039] Please still refer to FIG. 2. In this embodiment of the present application, the control gate 3 and the metal gate 51 form a gate structure 30. The control gate 3 can be a stacked structure, specifically including a PGaN layer 31 located on the channel layer 2 and a TiN layer 32 located on the PGaN layer 31. The orthogonal projection of the TiN layer 32 onto the substrate 1 can be within the PGaN layer 31. Specifically, the TiN layer 32 and the PGaN layer 31 can be formed by a single patterning process, and then the pattern of the TiN layer 32 can be selectively shrunk based on device design requirements, so that the size of the pattern of the TiN layer 32 is smaller than that of the PGaN layer 31.

[0040] FIG. 3 shows an example of a schematic cross-sectional structure of another field effect transistor according to an embodiment of this application. Please refer to FIG. 3. In another embodiment of this application, the control gate 3 may be a single-layer structure, specifically including a PGaN layer 31. A TiN layer 32 is disposed between the passivation layer 4 and the gate metal layer 5. The control gate 3, the TiN layer 32, and the metal gate 51 form a gate structure 30. After the passivation layer 4 is fabricated, a TiN film and a gate metal film are grown directly on the passivation layer 4, and then a patterning process is performed once to form the pattern of the TiN layer 32 and the gate metal layer 5, so that the orthogonal projection of the TiN layer 32 on the substrate 1 coincides with the gate metal layer 5. In this case, the pattern of the TiN layer 32 is under both the step 52 and the metal gate 51.

[0041] 2 and 3. In some embodiments of this application, the layout can be defined and the etching process adjusted such that the sidewall of the step 52 on the side facing the metal gate 51 can be perpendicular to the surface of the passivation layer 4, and the cross section of the step 52 resembles a rectangle. In other words, when patterning is performed on the gate metal layer 5, the cross section forming the pattern is perpendicular to the surface of the passivation layer 4.

[0042] 4 shows an example of a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of this application. Please refer to FIG. 4. In another embodiment of this application, in order to optimize the electric field distribution between the gate and the drain, a layout can be defined and an etching process can be adjusted such that the sidewall of the step 52 facing the metal gate 51 is inclined toward the drain 72, the included angle θ between the sidewall of the step 52 facing the metal gate 51 and the surface of the step 52 facing the passivation layer 4 is less than 90 degrees, and the cross section of the step 52 resembles a trapezoid.

[0043] Please still refer to Figures 2 to 4. In some embodiments of this application, there may be one step 52 and one secondary field plate 732. The orthogonal projection of the primary field plate 731 onto the substrate 1 may be located between the secondary field plate 732 and the metal gate 51. This helps to form an electric field gradient distribution between the gate structure 30 and the drain 72. Therefore, the gate structure 30 is further protected.

[0044] FIG. 5 shows an example of a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of this application. Please refer to FIG. 5. In another embodiment of this application, the secondary field plate 732 can be arranged to be separated from the primary field plate 731. In other words, the structures of the two field plates are separated from each other, and the primary field plate 731 is directly drawn from the source 71. In order to ensure that the secondary field plate 732 receives an electrical signal from the source 71, a secondary field plate connection hole 83 can be further disposed in the flat layer 8, and the source connection pad 91 is electrically connected to the secondary field plate 732 through the secondary field plate connection hole 83. In other words, the secondary field plate 732 receives an electrical signal from the source 71 by using the source connection pad 91.

[0045] FIG. 6 shows an example of a schematic diagram of a cross-sectional structure of another field effect transistor according to an embodiment of this application. Please refer to FIG. 6. In another embodiment of this application, the step 52 may be a discontinuous structure. In other words, the step 52 may be distributed into multiple sections, so that multiple secondary field plates 732 can exist. Also, the multiple secondary field plates 732 may be conductive with each other by using the primary field plate 731. Alternatively, the secondary field plates 732 may be separated from each other. Alternatively, some of the secondary field plates 732 may be conductive with each other by using the primary field plate 731, and other parts of the secondary field plates 732 may be separated from each other. This is not limited here. Note that the secondary field plate 732 separated from the primary field plate 731 needs to be electrically connected to the source connection pad 91 through the secondary field plate connection hole 83 with reference to the structure shown in FIG. 5.

[0046] FIG. 7 is an example of a schematic diagram of a structure of a field effect transistor viewed from above according to an embodiment of this application. FIG. 8 is an example of a schematic diagram of a structure of another field effect transistor viewed from above according to an embodiment of this application. FIG. 9 is an example of a schematic diagram of a structure of another field effect transistor viewed from above according to an embodiment of this application. Please refer to FIG. 7. In one embodiment of this application, discontinuous steps 52 in the first direction X can be formed by adjusting the layout of the gate metal layer 5 so that the secondary field plate 732 is arranged only in the first direction X, which is the direction in which the source 71 points to the drain 72. Please refer to FIG. 8. In another embodiment of this application, discontinuous steps 52 in the second direction Y can also be formed by adjusting the layout of the gate metal layer 5 so that the secondary field plate 732 is arranged only in the second direction Y perpendicular to the first direction X. Please refer to FIG. 9. In another embodiment of the present application, discontinuous steps 52 may be formed in both the first direction X and the second direction Y by adjusting the layout of the gate metal layer 5 such that the secondary field plates 732 are arranged in both the first direction X and the second direction Y, i.e., such that the secondary field plates 732 can be considered to be arranged in an array.

[0047] 10 shows an example of a schematic flow chart of a method for manufacturing a field effect transistor according to an embodiment of this application. Please refer to FIG. 10. The method mainly includes the following steps:

[0048] S101: forming a channel layer, a control gate, and a passivation layer on a substrate in order, the passivation layer including a gate opening exposing the control gate;

[0049] S102: Form a gate metal layer on the passivation layer, the gate metal layer including spaced apart metal gates and steps, the metal gates being electrically connected to the control gates through gate openings.

[0050] S103: Form an interlayer dielectric layer on the gate metal layer, and etch the interlayer dielectric layer and the passivation layer to form a source opening and a drain opening respectively located on either side of the metal gate, with an orthogonal projection of a step onto the substrate located between the drain opening and the metal gate.

[0051] S104: forming a source-drain metal layer on the interlayer dielectric layer, the source-drain metal layer including a source and a drain respectively located on both sides of the metal gate and a field plate electrically connected to the source, the source being electrically connected to the channel layer through a source opening, and the drain being electrically connected to the channel layer through a drain opening; The field plate is positioned to extend from the source to one side of the drain and be separated from the drain, and an orthogonal projection of the field plate onto the substrate has an overlapping region with both the metal gate and the step, the field plate includes a primary field plate and a secondary field plate whose orthogonal projections onto the substrate are located between the metal gate and the drain, the secondary field plate being the portion covering the step, and the primary field plate being the portion other than the secondary field plate.

[0052] According to the manufacturing method provided in this embodiment of the present application, a pattern of a metal gate is formed in the gate metal layer while a pattern of a step is also formed, so that the portion of the source-drain metal layer covering the step is raised to form a secondary field plate, and a height difference is formed between the portion not raised by the step and the secondary field plate, and the portion not raised by the step forms a primary field plate. Thus, the patterning process only needs to be performed once to process the entire field plate. In other words, the entire field plate is formed by performing each of metal deposition, photo-etching, and etching once. Therefore, the complexity and industrial cost of the manufacturing process of the field plate are reduced.

[0053] Still see Figure 10. In this embodiment of this application, the manufacturing method may further include the steps of:

[0054] S105: forming a planar layer on the source-drain metal layer, the planar layer including a source contact hole and a drain contact hole, the through-hole depths of the source contact hole and the drain contact hole being the same, which helps to control a through-hole etching process of the planar layer.

[0055] S106: Form a connection metal layer on the planar layer, the connection metal layer including a source connection pad and a drain connection pad, the source connection pad being electrically connected to the source through the source connection hole, and the drain connection pad being electrically connected to the drain through the drain connection hole.

[0056] In order to facilitate understanding of the manufacturing method provided in this embodiment of the present application, the steps are described in detail below by taking the structure shown in Figure 4 as an example. Figures 11a and 11b show examples of schematic diagrams of structures obtained after completing each step of manufacturing the structure shown in Figure 4. Please refer to Figures 11a and 11b. In this embodiment of the present application, the manufacturing method includes the following steps:

[0057] 1: Referring to A of FIG. 11a, a channel layer 2 and a control gate 3 are patterned on a substrate 1 in sequence.

[0058] Specifically, the substrate 1 may be manufactured using a semiconductor material such as a III-V compound, silicon, sapphire, or silicon carbide. As a functional layer of a field effect transistor, the channel layer 2 is configured to form a two-dimensional electron gas of the field effect transistor. The channel layer 2 may include a GaN layer and an AlGaN barrier layer arranged in a stacked manner, and the GaN layer is located between the AlGaN barrier layer and the substrate 1. A channel is formed on the interface between the GaN layer and the AlGaN barrier layer, and a two-dimensional electron gas is located on the interface between the GaN layer and the AlGaN barrier layer. The source 71 and the drain 72 may form ohmic contacts with the GaN layer. When the gate structure 30 controls the channel to be conductive, electrons are located in the channel, and the source 71 and the drain 72 may be conductive through the electrons in the channel. When the gate structure 30 controls the channel to be cut, there are no free electrons in the channel, and the connection between the source 71 and the drain 72 is cut.

[0059] As an optional solution, a buffer layer may be further formed on the substrate 1 before the channel layer 2 is formed on the substrate 1. The buffer layer may be specifically formed on the surface of the substrate 1 by using processes such as chemical vapor deposition and epitaxial growth. The buffer layer serves as an optional structural layer. The buffer layer may be disposed based on requirements. For example, if the substrate 1 can directly support the channel layer 2, the buffer layer may not be disposed, and the channel layer 2 may be formed directly on the substrate 1. If the material of the channel layer 2 is incompatible with the material of the substrate 1 and the channel layer 2 cannot be formed directly on the substrate 1, the buffer layer is disposed to isolate the substrate 1 and the channel layer 2. The material of the buffer layer needs to be selected based on the material of the substrate 1. This is not limited here.

[0060] Specifically, the control gate 3 may include a PGaN layer 31 and a TiN layer 32, and the PGaN layer 31 is located between the TiN layer 32 and the channel layer 2. The pattern of the PGaN layer 31 and the TiN layer 32 may be formed by performing a patterning process once. For example, a PGaN film and a TiN film may be grown on the channel layer 2, and then the PGaN film and the TiN film are etched, and the remaining PGaN layer 31 and the TiN layer 32 are used as the control gate 3. Also, a lateral size shrinking process may be selectively performed on the TiN layer 32 based on requirements.

[0061] 2: Referring to FIG. 11a B, a passivation layer 4 is deposited, and then a one-time patterning process is performed on the passivation layer 4 to form a gate opening 41 exposing the control gate 3. The gate opening 41 is generally smaller than the size of the control gate 3.

[0062] Specifically, the material of the passivation layer 4 includes, but is not limited to, SiO2, Si3N4, AlO, AlN, or a laminated structure of multiple dielectric films.

[0063] 3: Referring to FIG. 11a C, a gate metal layer 5 is deposited and a patterning process is performed on the gate metal layer 5 to form a metal gate 51 and a step 52. The metal gate 51 is electrically connected to the control gate 3 through the gate opening 41. The step 52 is at a specific location between the gate structure 30 and the drain 72 to be formed.

[0064] Specifically, the material of the gate metal layer 5 includes, but is not limited to, metals or metal compounds such as TiN, W, Ta, TaN, Pd, or WSi.

[0065] Specifically, referring to FIG. 2, a layout can be defined and an etching process can be adjusted so that the sidewall of the step 52 facing the metal gate 51 can be perpendicular to the surface of the passivation layer 4, and the cross section of the step 52 resembles a rectangle. Alternatively, refer to FIG. 4. The sidewall of the step 52 facing the metal gate 51 is inclined toward the drain 72, and the included angle θ between the sidewall of the step 52 facing the metal gate 51 and the surface of the step 52 facing the passivation layer 4 is less than 90 degrees, and the cross section of the step 52 resembles a trapezoid. The distance between the step 52 and the drain 72 formed is generally greater than 0.5 μm.

[0066] Specifically, one or more steps 52 may be fabricated based on the number of secondary field plates 732 that need to be formed, see Figures 7 to 9. A plurality of steps 52 may be arranged in a first direction X and / or a second direction Y, where the first direction X is the direction in which the source 71 to be formed points to the drain 72, and the second direction Y is perpendicular to the first direction X.

[0067] See Fig. 3. When the control gate 3 includes only the PGaN layer 31, before the gate metal layer 5 is deposited, a TiN layer 32 can be further formed on the passivation layer 4 independent of the gate metal layer 5, and then a patterning process can be performed once to form the TiN layer 32 and the gate metal layer 5 with the same pattern.

[0068] 4: Referring to FIG. 11b D, an interlayer dielectric layer 6 is deposited, and a one-time patterning process is performed on the interlayer dielectric layer 6 and the passivation layer 4 to open ohmic contact windows to form a source opening 61 and a drain opening 62 located on both sides of the metal gate 51, and then a source-drain metal layer 7 (which can also be called ohmic metal) is deposited, and a one-time patterning process is performed on the ohmic metal to form a source 71 and a drain 72 located on both sides of the metal gate 51, and a field plate 73 electrically connected to the source 71, where the source 71 is electrically connected to the channel layer 2 through the source opening 61, and the drain 72 is electrically connected to the channel layer 2 through the drain opening 62, i.e., the source ohmic metal draws the low potential and bypasses the extension of the gate structure 30 to form a primary field plate 731, and the part above the step 52 forms a secondary field plate 732.

[0069] Specifically, based on the position and number of steps 52, one or more secondary field plates 732 may be formed. See Figures 2 to 5. If there is one step 52 and one secondary field plate 732, the orthogonal projection of the primary field plate 731 onto the substrate 1 may be located between the secondary field plate 732 and the metal gate 51. See Figures 6 to 9. If there are multiple steps 52 and multiple secondary field plates 732, the multiple secondary field plates 732 may be arranged in a first direction X and / or a second direction Y. The first direction X is the direction in which the source 71 to be formed points to the drain 72, and the second direction Y is perpendicular to the first direction X.

[0070] Specifically, the material of the ohmic metal includes, but is not limited to, metals or metal compounds such as Al, Ti, W, and TiN. The material of the interlayer dielectric layer 6 includes, but is not limited to, materials such as SiO2, Si3N4, or SiON.

[0071] 5: Referring to FIG. 11b E, a planar layer 8 is deposited, and a patterning process is performed on the planar layer 8 once to form a source contact hole 81 and a drain contact hole 82, and the source contact hole 81 and the drain contact hole 82 are filled with tungsten plugs, and then a connection metal layer 9 is deposited, and a patterning process is performed on the connection metal layer 9 once to form a source contact pad 91 and a drain contact pad 92, and the final device structure is completed.

[0072] 5. When the secondary field plate 732 is arranged to be separated from the primary field plate 731, i.e., when the structures of the two field plates are separated from each other, the primary field plate 731 is directly drawn from the source 71. To ensure that the secondary field plate 732 receives an electrical signal from the source 71, a secondary field plate connection hole 83 can be further disposed in the flat layer 8, and a source connection pad 91 is electrically connected to the secondary field plate 732 through the secondary field plate connection hole 83. In other words, the secondary field plate 732 receives an electrical signal from the source 71 by using the source connection pad 91.

[0073] An embodiment of this application further provides an electronic circuit. The electronic circuit may include a circuit board and a field effect transistor according to any of the above-mentioned embodiments provided in this application. The field effect transistor is disposed on the circuit board. The problem-solving principle of the electronic circuit is similar to that of the above-mentioned field effect transistor. Therefore, for the implementation of the electronic circuit, please refer to the implementation of the above-mentioned field effect transistor, and the repetitive content will not be described again.

[0074] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application, and this application intends to cover such modifications and variations to this application as long as they fall within the scope of protection defined by the following claims and their equivalent technologies.

Claims

1. a channel layer located on the substrate; a control gate located on the channel layer; a passivation layer overlying the control gate and the channel layer, the passivation layer having a gate opening exposing the control gate; a gate metal layer overlying the passivation layer, the gate metal layer having a spaced apart metal gate and a step, the metal gate being formed on a portion of the passivation layer overlying the control gate, the step being formed on a portion of the passivation layer overlying the channel layer, the step being at a lower elevation than the metal gate, the metal gate being electrically connected to the control gate through the gate opening, and the step being electrically floating; an interlayer dielectric layer overlying the gate metal layer, with source and drain openings passing through the interlayer dielectric layer and the passivation layer on either side of the metal gate, and an orthogonal projection of the step onto the substrate between the drain opening and the metal gate; a source / drain metal layer located on the interlayer dielectric layer, the source / drain metal layer having a source and a drain respectively located on either side of the metal gate and a field plate electrically connected to the source, the source being electrically connected to the channel layer through the source opening, and the drain being electrically connected to the channel layer through the drain opening; having the field plate extends from the source to one side of the drain and is disposed so as to be separated from the drain, an orthogonal projection of the field plate onto the substrate has an overlapping region with the step, the field plate has a primary field plate and a secondary field plate, the orthogonal projections of the primary field plate and the secondary field plate onto the substrate are located between the metal gate and the drain, the secondary field plate is a portion covering the step, the primary field plate is a portion other than the secondary field plate, and the secondary field plate is raised by the step with respect to a portion of the primary field plate adjacent to the secondary field plate. Field effect transistor.

2. a sidewall of the step facing the metal gate is perpendicular to the surface of the passivation layer; or a sidewall of the step facing the metal gate is inclined toward the drain, and an included angle between the sidewall of the step facing the metal gate and a surface of the step facing the passivation layer is less than 90 degrees; 2. The field effect transistor of claim 1.

3. 2. The field effect transistor of claim 1 wherein there are multiple secondary field plates.

4. 4. The field effect transistor of claim 3, wherein the plurality of secondary field plates are arranged in a first direction or a second direction, or the plurality of secondary field plates are arranged in an array, the first direction being the direction in which the source points to the drain, and the second direction being perpendicular to the first direction.

5. 2. The field effect transistor of claim 1, wherein there is one secondary field plate, the orthogonal projection of said primary field plate onto said substrate being located between said secondary field plate and said metal gate.

6. a flat layer located on the source / drain metal layer, the flat layer having a source contact hole and a drain contact hole; a connection metal layer located on the planar layer, the connection metal layer having a source connection pad and a drain connection pad, the source connection pad being electrically connected to the source through the source connection hole, and the drain connection pad being electrically connected to the drain through the drain connection hole; 2. The field effect transistor of claim 1 further comprising:

7. the secondary field plate is positioned such that it is separated from the primary field plate; the planar layer further has a secondary field plate connection hole, and the source connection pad is electrically connected to the secondary field plate through the secondary field plate connection hole.

7. The field effect transistor of claim 6.

8. 2. The field effect transistor of claim 1, wherein the control gate comprises a PGaN layer overlying the channel layer and a TiN layer overlying the PGaN layer, the orthogonal projection of the TiN layer onto the substrate being within the PGaN layer.

9. the control gate comprises a PGaN layer; The field effect transistor further comprises a TiN layer located between the passivation layer and the gate metal layer, the orthogonal projection of the TiN layer onto the substrate being coincident with the gate metal layer.

2. The field effect transistor of claim 1.

10. An electronic circuit having a circuit board and a field effect transistor, the field effect transistor comprising: a channel layer located on the substrate; a control gate located on the channel layer; a passivation layer overlying the control gate and the channel layer, the passivation layer having a gate opening exposing the control gate; a gate metal layer overlying the passivation layer, the gate metal layer having a spaced apart metal gate and a step, the metal gate being formed on a portion of the passivation layer overlying the control gate, the step being formed on a portion of the passivation layer overlying the channel layer, the step being at a lower elevation than the metal gate, the metal gate being electrically connected to the control gate through the gate opening, and the step being electrically floating; an interlayer dielectric layer overlying the gate metal layer, with source and drain openings passing through the interlayer dielectric layer and the passivation layer on either side of the metal gate, and an orthogonal projection of the step onto the substrate between the drain opening and the metal gate; a source / drain metal layer located on the interlayer dielectric layer, the source / drain metal layer having a source and a drain respectively located on either side of the metal gate and a field plate electrically connected to the source, the source being electrically connected to the channel layer through the source opening, and the drain being electrically connected to the channel layer through the drain opening; having the field plate extends from the source to one side of the drain and is disposed so as to be separated from the drain, an orthogonal projection of the field plate onto the substrate has an overlapping region with the step, the field plate has a primary field plate and a secondary field plate, the orthogonal projections of the primary field plate and the secondary field plate onto the substrate are located between the metal gate and the drain, the secondary field plate is a portion covering the step, the primary field plate is a portion other than the secondary field plate, and the secondary field plate is raised by the step with respect to a portion of the primary field plate adjacent to the secondary field plate. electronic circuit.

11. 1. A method for manufacturing a field effect transistor, comprising the steps of: forming a channel layer, a control gate, and a passivation layer in that order on a substrate, the passivation layer having a gate opening exposing the control gate; forming a gate metal layer on the passivation layer, the gate metal layer having a spaced apart metal gate and a step, the metal gate being formed on a portion of the passivation layer overlying the control gate, the step being formed on a portion of the passivation layer overlying the channel layer, the step being at a lower elevation than the metal gate, the metal gate being electrically connected to the control gate through the gate opening, the step being electrically floating; forming an interlevel dielectric layer on the gate metal layer; etching the interlevel dielectric layer and the passivation layer to form a source opening and a drain opening respectively located on either side of the metal gate, with an orthogonal projection of the step on the substrate being located between the drain opening and the metal gate; forming a source / drain metal layer on the interlayer dielectric layer, the source / drain metal layer having a source and a drain respectively located on either side of the metal gate and a field plate electrically connected to the source, the source being electrically connected to the channel layer through the source opening, and the drain being electrically connected to the channel layer through the drain opening; Having said that, the field plate is disposed to extend from the source to one side of the drain and be separated from the drain, an orthogonal projection of the field plate onto the substrate has an overlapping region with both the metal gate and the step, the field plate has a primary field plate and a secondary field plate, the orthogonal projections of the primary field plate and the secondary field plate onto the substrate are located between the metal gate and the drain, the secondary field plate is a portion covering the step, the primary field plate is a portion other than the secondary field plate, and the secondary field plate is raised by the step with respect to a portion of the primary field plate adjacent to the secondary field plate. Manufacturing method.

12. a sidewall of the step facing the metal gate is perpendicular to the surface of the passivation layer; or a sidewall of the step facing the metal gate is inclined toward the drain, and an included angle between the sidewall of the step facing the metal gate and a surface of the step facing the passivation layer is less than 90 degrees; The method of claim 11.

13. The method of claim 11 wherein there are multiple secondary field plates.

14. 14. The method of claim 13, wherein the secondary field plates are arranged in a first direction and / or a second direction, the first direction being a direction in which the source points to the drain, and the second direction being perpendicular to the first direction.

15. The method of claim 11 , wherein there is one secondary field plate, the orthogonal projection of the primary field plate onto the substrate being located between the secondary field plate and the metal gate.

16. forming a flat layer on the source / drain metal layer, the flat layer having a source contact hole and a drain contact hole; forming a connection metal layer on the flat layer, the connection metal layer having a source connection pad and a drain connection pad, the source connection pad being electrically connected to the source through the source connection hole, and the drain connection pad being electrically connected to the drain through the drain connection hole; The method of claim 15 further comprising:

17. the secondary field plate is positioned such that it is separated from the primary field plate; the planar layer further has a secondary field plate connection hole, and the source connection pad is electrically connected to the secondary field plate through the secondary field plate connection hole. The method of claim 16.

18. 12. The method of claim 11, wherein forming the control gate comprises forming a PGaN layer on the channel layer and forming a TiN layer on the PGaN layer, an orthogonal projection of the TiN layer on the substrate within the PGaN layer.

19. 12. The method of claim 11, prior to forming the gate metal layer, the method further comprises forming a TiN layer on the passivation layer, wherein an orthogonal projection of the TiN layer onto the substrate coincides with the gate metal layer.

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