WIRING BOARD WITH SUPPORT, METHOD FOR PRODUCING ... COMPOSITE WIRING BOARD, AND METHOD FOR PRODUCING WIRING BOARD WITH FUNCTIONAL DEVICE

Abstract

To provide a wiring board with a support that easily peels the support from the wiring board.SOLUTION: A wiring board 1 with a support includes: a support 11 that has a support surface and transmits light having a specific wavelength in a direction perpendicular to the support surface; a wiring board 15 that faces the support surface; a separation layer 13 that is interposed between the support 11 and the wiring board 15 and whose adhesion is lowered by heating; and a light absorbing layer 12 interposed between the support 11 and the separation layer 13. The light absorbing layer 12 exhibits a higher light absorption rate than the separation layer 13.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a wiring board with a support, a method for manufacturing a wiring board with a support, a method for manufacturing a composite wiring board, and a method for manufacturing a wiring board with a functional device. [Background technology]

[0002] In recent years, as semiconductor devices become faster and more highly integrated, FC-BGA (Flip Chip-Ball Grid Array) substrates on which semiconductor chips are mounted are also required to have narrower pitches for the bonding terminals used for bonding to the semiconductor chips and finer wiring within the substrate. On the other hand, bonding between the FC-BGA substrate and the motherboard is required to be performed using bonding terminals arranged at almost the same pitch as before. In response to these requirements, a technology has been adopted in which a multilayer wiring substrate containing fine wiring, also called an interposer, is provided between the FC-BGA substrate and the semiconductor chip.

[0003] One of these is silicon interposer technology, which manufactures interposers by forming a multilayer wiring structure, each layer of which contains fine wiring, on a silicon wafer using semiconductor circuit manufacturing technology.

[0004] Also, a method has been developed in which the above multi-layer wiring structure is directly fabricated on an FC-BGA substrate, rather than being formed on a silicon wafer. This method involves forming the above multi-layer wiring structure by using chemical mechanical polishing (CMP) or the like in the manufacture of an FC-BGA substrate, the core layer of which is made of, for example, a glass epoxy substrate. This method is disclosed in Patent Document 1.

[0005] Furthermore, there is also a method (hereinafter referred to as a transfer method) in which an interposer is formed on a support such as a glass substrate, the interposer is bonded to an FC-BGA substrate, and then the support is peeled off from the interposer to provide the above-mentioned multilayer wiring structure on the FC-BGA substrate. This method is disclosed in Patent Document 2. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-225671 A [Patent Document 2] International Publication No. 2018 / 047861 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a wiring board with a support from which the support can be easily peeled off. [Means for solving the problem]

[0008] According to one aspect of the present invention, there is provided a wiring board with a support, comprising: a support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; a wiring board facing the support surface; a peeling layer interposed between the support and the wiring board and having adhesion reduced by heating; and a light absorbing layer interposed between the support and the peeling layer, wherein the light absorbing layer exhibits a higher light absorption rate than the peeling layer.

[0009] According to another aspect of the present invention, there is provided a support-attached wiring board according to the above aspect, wherein the light absorbing layer has a thickness in the range of 5 nm to 100 nm.

[0010] According to yet another aspect of the present invention, there is provided a support-attached wiring board according to any one of the above aspects, wherein the release layer has a thickness within a range of 10 nm to 50 μm.

[0011] According to yet another aspect of the present invention, there is provided a wiring board with a support relating to any of the above aspects, wherein a contour of a first orthogonal projection of the release layer onto a plane parallel to the support surface is inside a contour of a second orthogonal projection of the light absorbing layer onto the plane.

[0012] According to yet another aspect of the present invention, there is provided a support-attached wiring board according to any one of the above aspects, wherein the light absorbing layer contains a metal, and the release layer contains a resin.

[0013] According to yet another aspect of the present invention, there is provided a wiring board with a support according to any one of the above aspects, wherein the wiring board is a multilayer wiring board.

[0014] According to yet another aspect of the present invention, there is provided a wiring board with a support according to the above aspect, wherein the multilayer wiring board is an interposer.

[0015] According to yet another aspect of the present invention, there is provided a wiring board with a support, comprising: a support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; a wiring board facing the support surface; a release layer interposed between the support and the wiring board, the adhesion of which decreases when heated; and a light absorbing layer interposed between the support and the release layer, wherein the light absorbing layer contains one or more metals selected from the group consisting of titanium, chromium, tungsten, nickel, molybdenum, niobium, and tantalum.

[0016] According to yet another aspect of the present invention, there is provided a method for manufacturing a wiring board with a support, the method including: forming a light absorbing layer on a support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; forming a release layer on the light absorbing layer, the release layer having an adhesion that decreases when heated; and forming a wiring board on the release layer, wherein the light absorbing layer exhibits a higher light absorptance than the release layer.

[0017] According to yet another aspect of the present invention, there is provided a method for manufacturing a composite wiring board, comprising: joining a first wiring board to a wiring board as a second wiring board included in a wiring board with a support as described in any one of claims 1 to 8; and then irradiating the light absorption layer with laser light having the specific wavelength to peel off the support from the wiring board.

[0018] According to yet another aspect of the present invention, there is provided a method for manufacturing a composite wiring board according to the above aspect, wherein the laser light is irradiated onto the light absorption layer from the support side, and the specific wavelength is within an infrared wavelength range.

[0019] According to yet another aspect of the present invention, there is provided a method for manufacturing a wiring board with a functional device, comprising: bonding a functional device to a wiring board with a support as described in any one of claims 1 to 8; and then irradiating the light absorption layer with laser light having the specific wavelength to peel off the support from the wiring board.

[0020] Here, the term "functional device" refers to a device that operates when at least one of power and an electric signal is supplied, a device that outputs at least one of power and an electric signal when stimulated from the outside, or a device that operates when at least one of power and an electric signal is supplied and outputs at least one of power and an electric signal when stimulated from the outside. The functional device is in the form of a chip, such as a semiconductor chip or a chip in which circuits and elements are formed on a substrate made of a material other than a semiconductor, such as a glass substrate. The functional device may include, for example, one or more of a large scale integrated circuit (LSI), a memory, an imaging element, a light-emitting element, and a MEMS (Micro Electro Mechanical Systems). The MEMS may be, for example, one or more of a pressure sensor, an acceleration sensor, a gyro sensor, a tilt sensor, a microphone, and an acoustic sensor. According to one example, the functional device is a semiconductor chip including an LSI.

[0021] According to yet another aspect of the present invention, there is provided a method for manufacturing a wiring board with a functional device according to the above aspect, wherein the laser light is irradiated onto the light absorption layer from the support side, and the specific wavelength is within the infrared wavelength range. Effect of the Invention

[0022] According to the present invention, there is provided a wiring board with a support, which allows the support to be easily peeled off from the wiring board. [Brief description of the drawings]

[0023] [Figure 1] 1 is a cross-sectional view showing a schematic configuration of a wiring board with a support according to an embodiment of the present invention; [Diagram 2] 4 is a cross-sectional view illustrating a support body in a method for manufacturing a wiring board with a support body according to an embodiment of the present invention. FIG. [Diagram 3] 4 is a cross-sectional view that illustrates a light absorbing layer and a release layer forming step in a method for producing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 4] FIG. 4 is a cross-sectional view that illustrates a first seed layer forming step in the method for producing a wiring substrate with a support according to one embodiment of the present invention. [Diagram 5] 4 is a cross-sectional view illustrating a resist layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 6] 4 is a cross-sectional view illustrating a conductor layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 7] 4 is a cross-sectional view illustrating an insulating layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 8] 4 is a cross-sectional view illustrating a process of forming an opening in an insulating layer in a method for manufacturing a wiring board with a support according to an embodiment of the present invention. FIG. [Figure 9] FIG. 4 is a cross-sectional view that illustrates a second seed layer forming step in the method for producing a wiring substrate with a support according to one embodiment of the present invention. [Figure 10] 4A to 4C are cross-sectional views each showing a schematic diagram of a resist layer and a conductor layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. [Figure 11] 4 is a cross-sectional view illustrating a resist layer removing step in the method for producing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 12] 4A to 4C are cross-sectional views each showing a schematic diagram of a conductive layer, an insulating layer, and a second seed layer forming step in a method for producing a wiring board with a support according to an embodiment of the present invention. [Figure 13]FIG. 4 is a cross-sectional view illustrating a top surface insulating layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. [Figure 14] FIG. 4 is a cross-sectional view that illustrates a surface treatment layer forming step in the method for producing a wiring board with a support according to one embodiment of the present invention. [Figure 15] 4 is a cross-sectional view that illustrates a first metal bump formation step in the method for manufacturing a wiring board with a support according to one embodiment of the present invention. FIG. [Figure 16] 1 is a cross-sectional view showing a schematic diagram of a wiring board with a support body, in which a wiring board, an outermost insulating layer, a surface treatment layer, and a first metal bump are omitted. [Figure 17] 17 is a plan view showing a schematic view of the surface on the release layer side of the wiring board with the support body shown in FIG. 16. [Figure 18] FIG. 2 is a plan view showing a schematic view of a wiring board with a support body, in which a top surface insulating layer, a surface treatment layer, and a first metal bump are omitted. [Figure 19] 3 is a cross-sectional view that illustrates a schematic diagram of a first wiring board in a method for manufacturing a composite wiring board according to an embodiment of the present invention. FIG. [Figure 20] 4 is a cross-sectional view illustrating a process of aligning the position of the first wiring board and the position of the wiring board with the support body in the method for manufacturing a composite wiring board according to one embodiment of the present invention. FIG. [Figure 21] 5 is a cross-sectional view illustrating a bonding step of a first wiring board and a wiring board with a support body in the manufacturing method for a composite wiring board according to one embodiment of the present invention. FIG. [Figure 22] 5 is a cross-sectional view that illustrates a laser light irradiation step in the method for manufacturing a composite wiring board according to one embodiment of the present invention. FIG. [Figure 23] 5 is a cross-sectional view illustrating a support member peeling step in the method for manufacturing a composite wiring board according to the embodiment of the present invention. FIG. [Figure 24] 1 is a cross-sectional view illustrating a composite wiring board according to an embodiment of the present invention. [Diagram 25] 1 is a schematic cross-sectional view of a packaged device according to an embodiment of the present invention; [Figure 26]5A to 5C are cross-sectional views each showing a schematic step of bonding a wiring board with a support body and a functional device in a manufacturing method for a wiring board with a functional device according to an embodiment of the present invention. [Figure 27] 6 is a cross-sectional view illustrating a second underfill forming step in the method for manufacturing a wiring board with a functional device according to one embodiment of the present invention. FIG. [Figure 28] 5A to 5C are cross-sectional views each showing a schematic diagram of a sealing resin forming step in the method for manufacturing a wiring board with a functional device according to one embodiment of the present invention. [Figure 29] 5A to 5C are cross-sectional views each showing a schematic laser light irradiation step in the method for manufacturing a wiring board provided with a functional device according to one embodiment of the present invention. [Diagram 30] 5A to 5C are cross-sectional views each showing a support member peeling step in the method for manufacturing a wiring board with a functional device according to one embodiment of the present invention. [Diagram 31] 1 is a cross-sectional view illustrating a wiring board with a functional device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The embodiment described below is a more specific embodiment of any of the above aspects. Elements having the same or similar functions are given the same reference numerals, and duplicated descriptions are omitted. It should be noted that the drawings are schematic, and the relationship between the dimension in the thickness direction and the dimension in the direction perpendicular to the thickness direction, i.e., the in-plane direction, and the relationship between the dimensions in the thickness direction of multiple layers may differ from the actual ones. Therefore, the specific dimensions should be determined with reference to the following description. It should also be noted that the relationship between the dimensions of two or more components may differ between multiple drawings.

[0025] The following embodiments are examples that embody the technical idea of ​​the present invention, and the technical idea of ​​the present invention is not limited to the materials, shapes, structures, arrangements, etc. of the components described below. Various modifications can be made to the technical idea of ​​the present invention within the technical scope defined by the claims.

[0026] <Wiring board with support> FIG. 1 is a cross-sectional view that illustrates a schematic diagram of a wiring board with a support according to one embodiment of the present invention.

[0027] 1 includes a support 11, a light absorbing layer 12, a release layer 13, a first seed layer 14, a wiring board 15, an outermost insulating layer 16, a surface treatment layer 17, and a first metal bump 18. The support-attached wiring board 1 is used to transfer the wiring board 15 to, for example, an FC-BGA substrate. The transfer is performed, for example, by irradiating the light absorbing layer 12 with laser light and peeling the support 11 from the wiring board 15.

[0028] The support 11 has a support surface and transmits light having a specific wavelength in a direction perpendicular to the support surface. The support 11 has, for example, transparency.

[0029] The specific wavelength is, for example, in the ultraviolet wavelength range to the infrared wavelength range. When the specific wavelength is in the ultraviolet wavelength range, the specific wavelength is, for example, in the range of 150 nm to 400 nm. When the specific wavelength is in the infrared wavelength range, the specific wavelength is, for example, in the range of 700 nm to 2000 nm.

[0030] The material of the support 11 is, for example, glass, polycarbonate, acrylic or silicon. Silicon can be used when the above specific wavelength is in the infrared wavelength range.

[0031] The material of the support 11 is preferably glass. When the support 11 is made of glass, the support 11 has a sufficient thickness and has excellent shape retention, so that the use of such a support 11 makes it possible to easily form the wiring board 15 having a fine wiring pattern.

[0032] The coefficient of thermal expansion (CTE) of the glass is preferably in the range of 3 ppm to 15 ppm, more preferably in the range of 3.3 ppm to 12.6 ppm. When the coefficient of thermal expansion is in the range of 3 ppm to 15 ppm, it is easy to achieve high-precision arrangement of the wiring pattern on the wiring board 15, and it is easy to form a flat wiring board 15. When the coefficient of thermal expansion of the glass is about 9 ppm, it is close to the coefficient of thermal expansion of the FC-BGA board and the coefficient of thermal expansion of the semiconductor chip, and therefore warping is unlikely to occur.

[0033] The thickness of the support 11 is preferably 0.7 mm or more, and more preferably 1.1 mm or more. If the support 11 is too thin, warping and the like are likely to occur. If the support 11 is too thick, the absorption of laser light by the support 11 is likely to be large. When the support 11 is made of glass, if the thickness of the support 11 is within the above range, warping is unlikely to occur during the manufacturing process.

[0034] The support 11 may be rectangular or circular.

[0035] The light absorbing layer 12 is interposed between the support 11 and the release layer 13. The light absorbing layer 12 exhibits a higher light absorptivity than the release layer 13. The light absorbing layer 12 generates heat by absorbing light having the above-mentioned specific wavelength, and transfers the heat to the release layer 13.

[0036] The material of the light absorbing layer 12 is, for example, a metal. The extinction coefficient of the metal at any wavelength in the range of 1033 nm to 1079 nm is preferably in the range of 3.3 to 5.32. Metals having the extinction coefficient in the above range are, for example, titanium, chromium, tungsten, nickel, molybdenum, niobium, or tantalum.

[0037] The extinction coefficient can be measured, for example, by spectroscopic ellipsometry.

[0038] The refractive index of the metal at any wavelength in the range of 1033 nm to 1079 nm is preferably in the range of 0.96 to 3.35, and more preferably in the range of 2.29 to 3.35. The metal having a refractive index in the range of 0.96 to 3.35 is, for example, titanium, chromium, tungsten, nickel, molybdenum, niobium, or tantalum. The metal having a refractive index in the range of 2.29 to 3.35 is, for example, titanium, chromium, tungsten, nickel, or molybdenum.

[0039] The refractive index can be measured, for example, by spectroscopic ellipsometry.

[0040] It is preferable that the material of the light absorbing layer 12 has an extinction coefficient in the range of 3.3 to 5.31 at any wavelength in the range of 1033 nm to 1079 nm and a refractive index in the range of 0.96 to 3.35 at any wavelength in the range of 1033 nm to 1079 nm. Examples of such materials include titanium, chromium, tungsten, nickel, molybdenum, niobium, and tantalum.

[0041] Table 1 shows the extinction coefficients and refractive indices of titanium, chromium, tungsten, niobium, molybdenum, niobium and tantalum at any wavelength within the range of 1033 nm to 1079 nm.

[0042] [Table 1]

[0043] The material of the light absorbing layer 12 is, for example, one or more metals selected from the group consisting of titanium, chromium, tungsten, nickel, molybdenum, niobium, and tantalum, or an alloy or compound containing these metals. Preferably, the material of the light absorbing layer 12 is one or more metals selected from the group consisting of titanium, chromium, tungsten, nickel, and molybdenum, or an alloy or compound containing these metals. More preferably, the material of the light absorbing layer 12 is titanium or an alloy or compound containing titanium.

[0044] The light absorbing layer 12 can be formed by, for example, a vacuum deposition method such as a molecular beam epitaxy (MBE) method, a sputtering method, an ion plating method, a laser ablation method, or a chemical vapor deposition (CVD) method.

[0045] The thickness of the light absorbing layer 12 is preferably, for example, in the range of 1 nm to 500 nm, and more preferably in the range of 5 nm to 100 nm. If the light absorbing layer 12 is too thin, when the wiring board 1 with the support is irradiated with laser light, the light absorbing layer 12 cannot sufficiently absorb the laser light, making it difficult to easily peel off the support 11 from the wiring board 15. If the light absorbing layer 12 is too thick, when the light absorbing layer 12 is irradiated with laser light, heat is easily conducted from the irradiated site to the in-plane direction of the light absorbing layer 12, making it difficult for the irradiated site to reach a sufficiently high temperature.

[0046] The release layer 13 is interposed between the support 11 and the wiring board 15. The adhesion of the release layer 13 decreases when heated. The decrease in adhesion means that the release layer 13 peels off from the light absorbing layer 12, or the force required to peel the release layer 13 from the light absorbing layer 12 decreases.

[0047] The material of the release layer 13 is, for example, a resin such as an epoxy resin, a polyimide resin, a polyurethane resin, a silicone resin, a polyester resin, an oxetane resin, a maleimide resin, or an acrylic resin. As the polyimide resin, for example, "UPIA (registered trademark)" manufactured by Ube Industries, Ltd. can be used.

[0048] The thickness of the release layer 13 is, for example, preferably in the range of 10 nm to 50 μm, more preferably in the range of 10 nm to 1 μm, and further preferably in the range of 10 nm to 0.5 μm. If the release layer 13 is too thin, it is difficult to form the release layer 13 uniformly. If the release layer 13 is too thick, it is difficult to form a wiring board 15 with excellent flatness.

[0049] When a liquid resin is used as the material of the release layer 13, the release layer 13 can be formed by, for example, slit coating, curtain coating, die coating, spray coating, electrostatic coating, inkjet coating, gravure coating, screen printing, gravure offset printing, spin coating, or doctor coating.

[0050] When a film-like resin is used as the material of the release layer 13, the release layer 13 can be provided on the light absorbing layer 12 by, for example, lamination, vacuum lamination, or vacuum pressing.

[0051] The release layer 13 may be made up of two or more layers.

[0052] The first seed layer 14 is, for example, a power supply layer in the formation of a conductor layer, which will be described later. The first seed layer 14 includes, for example, copper, nickel, aluminum, titanium, chromium, molybdenum, tungsten, tantalum, gold, iridium, ruthenium, palladium, platinum, Al-Si based alloys, Al-Si-Cu based alloys, Al-Cu based alloys, Ni-Fe based alloys, indium tin oxide (ITO), indium zinc oxide (IZO), activated zinc oxide (AZO), zinc oxide (ZnO), lead zirconate titanate (PZT), titanium nitride (TiN), Cu3N4, and Cu alloys alone or in mixtures thereof.

[0053] The first seed layer 14 is formed by, for example, a sputtering method or a chemical vapor deposition (CVD) method.

[0054] The thickness of the first seed layer 14 is preferably 1 μm or less, and more preferably in the range of 50 nm to 500 nm.

[0055] The first seed layer 14 may be composed of two or more layers. In this case, the first seed layer 14 is composed of, for example, a first metal-containing layer interposed between the release layer 13 and the wiring substrate 15, and a second metal-containing layer interposed between the first metal-containing layer and the wiring substrate 15.

[0056] The first metal-containing layer contains, for example, titanium. The second metal-containing layer contains, for example, copper. The first metal-containing layer and the second metal-containing layer are formed, for example, by sputtering. When the first metal-containing layer contains titanium, the first metal-containing layer has excellent adhesion to the release layer 13. When the second metal-containing layer contains copper, the first metal-containing layer has excellent adhesion to the conductor layer described later.

[0057] The thickness of the first metal-containing layer is preferably within a range of, for example, 10 nm to 100 nm, and the thickness of the second metal-containing layer is preferably within a range of, for example, 40 nm to 400 nm.

[0058] The wiring board 15 faces the support surface of the support body 11. The wiring board 15 connects, for example, a functional device such as a semiconductor chip to the FC-BGA board. The wiring board 15 is manufactured by, for example, an existing method.

[0059] The wiring board 15 is, for example, a multilayer wiring board such as an interposer. The wiring board 15 is, for example, made of a build-up wiring layer. The wiring board 15 includes, for example, a fine wiring pattern. The minimum line / space of the wiring board 15 is, for example, within a range of 1 μm / 1 μm to 5 μm / 5 μm. The conductor layer included in the wiring board 15 is formed, for example, by a damascene method or a semi-additive method. The conductor layer will be described later.

[0060] The wiring board 15, the outermost insulating layer 16, the surface treatment layer 17 and the first metal bumps 18 will be described in detail later.

[0061] In order to protect wiring board 15 from the laser light, a protective layer may be provided between release layer 13 and wiring board 15 .

[0062] <Method of manufacturing a wiring board with a support> Hereinafter, an example of a method for manufacturing the wiring board 1 with the support body will be described with reference to FIGS.

[0063] First, a support 11 is prepared as shown in Fig. 2. The support 11 is made of glass.

[0064] Next, as shown in Fig. 3, a light absorbing layer 12 and a release layer 13 are formed on the support 11. Specifically, first, titanium is sputtered on the support 11. In this manner, the light absorbing layer 12 is formed. Next, a polyimide resin is applied onto the light absorbing layer 12 by spin coating. In this manner, the release layer 13 is formed.

[0065] Next, the wiring board 15 is formed.

[0066] First, as shown in FIG. 4, a first seed layer 14 is formed on a release layer 13. Here, a first metal-containing layer and a second metal-containing layer are formed as the first seed layer 14. Specifically, first, titanium is sputtered on the release layer 13. In this manner, a first metal-containing layer is formed. Next, copper is sputtered on the first metal-containing layer. In this manner, a second metal-containing layer is formed.

[0067] 5, a resist layer 151A is formed in a pattern on the first seed layer 14. Specifically, first, in a vacuum, the resist layer 151A is formed on the first seed layer 14. Then, a part of the resist layer 151A is removed by photolithography to provide an opening. In this manner, the resist layer 151A is formed in a pattern.

[0068] The material of the resist layer 151A is, for example, an alkaline developing type photosensitive resin.

[0069] Next, as shown in FIG. 6, a conductor layer 152A is formed on the first seed layer 14. Specifically, first, the conductor layer 152A containing copper is formed by electrolytic plating on the portion of the first seed layer 14 that is not covered by the resist layer 151A. Then, the resist layer 151A is removed using a resist remover such as an alkaline solution. In this manner, the conductor layer 152A is formed. The conductor layer 152A is, for example, an electrode. The conductor layer 152A is, for example, an electrode used for bonding to a first wiring board described later, or an electrode used for bonding to a functional device.

[0070] When the conductor layer 152A contains copper, it is possible to form the conductor layer 152A easily and inexpensively. Moreover, the conductor layer 152A containing copper has excellent electrical conductivity.

[0071] The conductor layer 152A may be made of, for example, nickel, chromium, palladium, gold, or rhodium, and may be formed by, for example, electrolytic plating.

[0072] The thickness of the conductor layer 152A is preferably in the range of 1 μm to 30 μm, and more preferably in the range of 1 μm to 5 μm. If the conductor layer 152A is too thick, the manufacturing cost tends to increase. If the conductor layer 152A is too thin, problems may occur in the bonding between the functional device or the first wiring board described later and the wiring board 15.

[0073] Next, as shown in FIG. 7, an insulating layer 153A is formed on the portion of the first seed layer 14 that is not covered by the conductor layer 152A and on the surface of the conductor layer 152A. Specifically, a photosensitive epoxy resin is applied by spin coating to the portion of the first seed layer 14 that is not covered by the conductor layer 152A and on the surface of the conductor layer 152A. Then, the photosensitive epoxy resin is cured. In this manner, the insulating layer 153A is formed. For example, the insulating layer 153A is formed so that the conductor layer 152A is embedded in the insulating layer 153A.

[0074] When a photosensitive epoxy resin is used, it is easy to harden the insulating layer 153A at a relatively low temperature. In addition, the photosensitive epoxy resin is not likely to shrink when hardened, so it is excellent for forming a fine wiring pattern.

[0075] The material of the insulating layer 153A may be a polyimide resin or a polyamide resin.

[0076] Instead of forming the insulating layer 153A using a photosensitive epoxy resin, the insulating layer 153A may be obtained by compressing an insulating resin film with a vacuum laminator. In this case, the insulating layer 153A having excellent flatness can be formed.

[0077] The thickness of the insulating layer 153A is preferably in the range of 0.5 μm to 50 μm, and more preferably in the range of 2 μm to 15 μm. If the insulating layer 153A is too thick, it is difficult to obtain a wiring board 15 with excellent flatness. If the insulating layer 153A is too thin, it is difficult to obtain high insulation reliability.

[0078] Next, one or more openings are formed in the insulating layer 153A by photolithography, as shown in Fig. 8. The openings are formed so as to expose a part of the upper surface of the conductor layer 152A.

[0079] After the openings are formed, plasma treatment may be performed in the openings to remove residues generated by development.

[0080] Next, as shown in FIG. 9, a second seed layer 154A is formed on the conductive layer 152A and the surface of the insulating layer 153A exposed by the openings.

[0081] The second seed layer 154A includes, for example, copper, nickel, aluminum, titanium, chromium, molybdenum, tungsten, tantalum, gold, iridium, ruthenium, palladium, platinum, Al-Si based alloys, Al-Si-Cu based alloys, Al-Cu based alloys, Ni-Fe based alloys, indium tin oxide (ITO), indium zinc oxide (IZO), activated zinc oxide (AZO), zinc oxide (ZnO), lead zirconate titanate (PZT), titanium nitride (TiN), Cu3N4, and Cu alloys alone or in mixtures thereof.

[0082] The second seed layer 154A is formed by, for example, a sputtering method or a chemical vapor deposition (CVD) method.

[0083] The thickness of the second seed layer 154A is, for example, preferably 1 μm or less, and more preferably within the range of 50 nm to 500 nm.

[0084] The second seed layer 154A may be composed of two or more layers. In this case, the second seed layer 154A is composed of, for example, a first metal-containing layer provided on the conductor layer 152A and the insulating layer 153A, and a second metal-containing layer provided on the conductor layer 152A and the insulating layer 153A via the first metal-containing layer.

[0085] The first metal-containing layer includes, for example, titanium. The second metal-containing layer includes, for example, copper. The first metal-containing layer and the second metal-containing layer are formed by, for example, sputtering.

[0086] Hereinafter, the second seed layer 154A is assumed to be composed of a first metal-containing layer containing titanium and a second metal-containing layer containing copper, the first metal-containing layer having a thickness of 50 nm, and the second metal-containing layer having a thickness of 300 nm.

[0087] 10, a resist layer 151B is formed in a pattern on the second seed layer 154A. Specifically, an opening is formed in the resist layer 151B so that a portion of the second seed layer 154A adjacent to the conductor layer 152A is exposed. Then, a conductor layer 152B is formed so as to cover the entire area of ​​the surface of the second seed layer 154A that is not covered by the resist layer 151B. The conductor layer 152B is a wiring pattern included in the wiring board 15.

[0088] The materials used for the resist layer 151B and the method of forming them are similar to those described for the resist layer 151A.

[0089] The materials and methods of forming the conductor layer 152B and the conductor layer 152C described below are the same as those described for the conductor layer 152 A. Here, it is assumed that the conductor layer 152B contains copper.

[0090] 11, the resist layer 151B is removed. Thereafter, the portion of the second seed layer 154A that is not covered with the conductor layer 152A is removed by etching.

[0091] Next, the method described with reference to Figures 7 to 11 is repeated twice to obtain the structure shown in Figure 12. The structure shown in Figure 12 includes conductor layers 152A, 152B, 152C, and 152D, insulating layers 153A, 153B, and 153C, and second seed layers 154A, 154B, and 154C. The conductor layers 152B and 152C are, for example, wiring of the wiring board 15. The conductor layer 152D is, for example, an electrode used for bonding to a first wiring board described below, or an electrode used for bonding to a functional device.

[0092] The thickness of the conductor layer 152D is preferably 5 μm or more. In this manner, the wiring board 15 is formed.

[0093] The method described with reference to FIGS. 7 to 11 may be repeated once, or may be repeated three or more times.

[0094] 13, the outermost insulating layer 16 is formed in a pattern on the wiring board 15. Specifically, first, the outermost insulating layer 16 is formed on the region of the surface of the insulating layer 153C that is not covered by the second seed layer 154C and the conductor layer 152D, on the surface of the conductor layer 152D, and on the side surface of the second seed layer 154C. Next, an opening is formed in the outermost insulating layer 16 by photolithography so that at least a part of the conductor layer 152D is exposed.

[0095] The material of the outermost insulating layer 16 is, for example, a photosensitive epoxy resin. The material of the outermost insulating layer 16 may be the same as the material of the insulating layer 153A.

[0096] 14, a surface treatment layer 17 is formed on a portion of the surface of the conductor layer 152D that is not covered by the outermost insulating layer 16. The surface treatment layer 17 is provided, for example, to prevent oxidation of the surface of the conductor layer 152D and / or to improve the wettability of the first metal bump 18.

[0097] For example, a plating film such as electroless Ni / Pd / Au plating, electroless tin plating, or electroless Ni / Au plating can be used as the surface treatment layer 17. Alternatively, a film made of water-soluble preflux (OSP: Organic Solderability Presevative) can be used as the surface treatment layer 17.

[0098] 15, a first metal bump 18 is formed on the surface treatment layer 17. Specifically, for example, a material for the first metal bump 18 is placed on the surface treatment layer 17, and then melted, cooled, and fixed to form the first metal bump 18.

[0099] The material of the first metal bump 18 is, for example, a Sn-Ag-Cu alloy, a Sn-Ag alloy, or a Sn-Cu alloy.

[0100] In this manner, a wiring board 1 with a support body is obtained.

[0101] The outermost insulating layer 16, the surface treatment layer 17 and the first metal bumps 18 may be omitted.

[0102] The wiring width of the wiring board 15 is preferably within a range of, for example, 1 μm or more and 5 μm or less. In this case, the wiring board 15 can be used as an interposer included in a high bandwidth memory (HBM). For example, when the wiring width is 2 μm, the wiring height is 2 μm, and the thickness of each insulating layer is 2 μm, the thickness of the layer consisting of the insulating layer and the conductor layer is 4 μm. When two layers consisting of the insulating layer and the conductor layer are laminated and the thickness of each of the conductor layers 152A and 152D is 10 μm, the thickness of the laminate consisting of the wiring board 15 and the conductor layers 152A and 152D is 28 μm. In this way, the laminate consisting of the wiring board 15 and the conductor layers 152A and 152D may be thin.

[0103] Fig. 16 is a cross-sectional view that shows a schematic diagram of the above-mentioned wiring board 1 with a support, omitting the wiring board 15, the outermost insulating layer 16, the surface treatment layer 17, and the first metal bump 18. Fig. 17 is a plan view that shows a schematic diagram of the surface of the wiring board 1 with a support shown in Fig. 16 on the peeling layer 13 side.

[0104] As shown in Figures 16 and 17, the outline of the first orthogonal projection of the release layer 13 onto a plane parallel to the support surface of the support 11 is preferably inside the outline of the second orthogonal projection of the light absorbing layer 12 onto the plane. If the outline of the first orthogonal projection is inside the outline of the second orthogonal projection, heat generated by the light absorbing layer 12 due to the irradiation of the laser light is easily transferred to the entire release layer 13. Therefore, the support 11 is easily peeled off from the wiring board 15. For example, when the above-mentioned wiring board 1 with the support is used to transfer the wiring board 15 to an FC-BGA board to obtain a composite wiring board, the composite wiring board can be obtained with a high yield.

[0105] 16 and 17 can be obtained, in one example, by forming a release layer 13 and then removing the peripheral portion of the release layer 13. In another example, the structure shown in Fig. 16 and 17 can be obtained, in another example, by forming a light absorbing layer 12 and then forming a protective film on the peripheral portion of the light absorbing layer 12, then forming a release layer 13 on the light absorbing layer 12 and the protective film, and then removing the protective film to remove the release layer 13 on the protective film.

[0106] Fig. 18 is a plan view that shows a schematic view of the above-mentioned wiring board 1 with support, omitting the outermost insulating layer 16, the surface treatment layer 17, and the first metal bump 18. Fig. 18 shows the surface of the wiring board 1 with support on the wiring board 15 side. As shown in Fig. 18, the wiring board 1 with support may be provided with a plurality of wiring boards 15. The plurality of wiring boards 15 form, for example, a board unit.

[0107] <Method of manufacturing composite wiring board> An example of a method for manufacturing a composite wiring board will be described below with reference to Figures 19 to 24. Note that surface treatment layer 17 is omitted in Figures 20 to 24.

[0108] First, a first wiring board 20 shown in Fig. 19 is prepared. The first wiring board 20 includes a core layer 21, a conductor layer 22, an insulating resin 23, a layer 24, an electrode 25, an outermost insulating resin layer 26, and a second metal bump 27. The first wiring board 20 is, for example, an FC-BGA board.

[0109] The core layer 21 is an insulating layer. The core layer 21 is, for example, a fiber-reinforced substrate in which a woven or nonwoven fabric is impregnated with a thermosetting insulating resin. As the woven or nonwoven fabric, for example, glass fiber, carbon fiber, or aramid fiber can be used. As the insulating resin, for example, epoxy resin can be used.

[0110] One or more through holes are provided in the core layer 21. The side walls of the through holes are covered with a conductor layer 22 containing a metal such as copper. The through holes covered with the conductor layer 22 are filled with an insulating resin 23.

[0111] A layer 24 is provided on each support surface of the core layer 21. The layer 24 includes a conductive pattern 241 and an insulating layer 242. The conductive pattern 241 is in contact with the conductive layer 22. The insulating layer 242 covers, for example, the side surface of the conductive pattern 241.

[0112] An electrode 25 is provided on a portion of the conductor pattern 241 that is not covered by the insulating layer 242 and is not in contact with the core layer 21 .

[0113] The lines / spaces of layer 24 are, for example, in the range of 8 μm / 8 μm to 25 μm / 25 μm.

[0114] On one main surface side of the core layer 21, a second metal bump 27 is provided on the electrode 25. On the one main surface side, the outermost insulating resin layer 26 covers the surface of the layer 24, the side surface of the electrode 25, and part of the side surface of the second metal bump 27.

[0115] The arrangement of the second metal bumps 27 is, for example, the same as the arrangement of the first metal bumps 18 provided on the support-attached wiring board 1 shown in FIG.

[0116] As the material for the second metal bumps 27, the materials explained for the first metal bumps 18 of the above-mentioned support-attached wiring board 1 can be used.

[0117] On the other main surface side of the core layer 21, an outermost insulating resin layer 26 is provided on the surface of the electrode 25 and the surface of the layer 24 so that a part of the surface of the electrode 25 is exposed.

[0118] Next, as shown in Fig. 20, the position of first wiring board 20 is aligned with the position of wiring board 1 with support shown in Fig. 1. The positions of first wiring board 20 and wiring board 1 with support are aligned so that the arrangement of second metal bumps 27 on first wiring board 20 corresponds to the arrangement of first metal bumps 18 on wiring board 1 with support shown in Fig. 1.

[0119] Next, as shown in FIG. 21, the first wiring board 20 is joined to a wiring board 15 as a second wiring board included in the wiring board with support 1, and then a first underfill 31 is filled in the area between the first wiring board 20 and the wiring board with support 1.

[0120] First wiring board 20 and supporting body-attached wiring board 1 are joined, for example, so as to face each other. Specifically, first wiring board 20 and supporting body-attached wiring board 1 are joined so that their surfaces on the wiring board 15 side face each other.

[0121] The bonding is performed via second metal bumps 27 provided on first wiring board 20 and first metal bumps 18 provided on support-attached wiring board 1. By this bonding, first bonding portions 30 are formed.

[0122] The first underfill 31 can be, for example, a mixture of one or more resins selected from the group consisting of epoxy resin, urethane resin, silicone resin, polyester resin, oxetane resin, and maleimide resin, and a filler such as silica, titanium oxide, aluminum oxide, magnesium oxide, or zinc oxide.

[0123] Next, as shown in Fig. 22, the light absorbing layer 12 is irradiated with laser light 40. Specifically, for example, the light absorbing layer 12 is irradiated with laser light 40 from the surface on the support 11 side of the composite of the first wiring board 20 and the support-attached wiring board 1. The white arrow shown in Fig. 22 indicates the moving direction of the laser light 40.

[0124] The laser light 40 has a specific wavelength. For example, it is within the ultraviolet wavelength range to the infrared wavelength range. When the specific wavelength is within the ultraviolet wavelength range, the specific wavelength is, for example, within the range of 150 nm to 400 nm. When the specific wavelength is within the infrared wavelength range, the specific wavelength is, for example, within the range of 700 nm to 2000 nm. The laser light 40 is preferably within the infrared wavelength range. The laser light 40 within the infrared wavelength range is less likely to cause damage to the wiring board 15 compared to the laser light 40 within the ultraviolet wavelength range. For example, defects are more likely to occur in the conductor layers 152A, 152B, 152C, and 152D, or the insulating layers 153A, 153B, and 153C.

[0125] The output of the laser light 40 is preferably within a range of 0.05 W to 25 W, and more preferably within a range of 0.1 W to 10 W. When the output of the laser light 40 is within the above range, the wiring board 15 is less likely to be damaged. When the output of the laser light 40 is too high, the wiring board 15 is more likely to be damaged. When the output of the laser light 40 is too low, it is difficult to peel the support 11 from the wiring board 15.

[0126] The irradiation energy per unit area of ​​the laser light 40 is 1 mJ / cm 2 ~1000mJ / cm 2 and preferably in the range of 10 mJ / cm 2 ~300mJ / cm 2 It is more preferable that the ratio is in the range of 1.

[0127] The number of times of irradiation with the laser light 40 is preferably one. The irradiation may be performed multiple times. From the viewpoint of the process load, it is preferable to perform the irradiation less frequently.

[0128] When the light absorbing layer 12 is irradiated with the laser beam 40, the light absorbing layer 12 generates heat. When the heat generated by the light absorbing layer 12 is conducted to the peeling layer 13, the peeling layer 13 in contact with the light absorbing layer 12 is altered at the position where the light absorbing layer 12 is irradiated with the laser beam 40. As a result, the adhesion of the peeling layer 13 decreases.

[0129] Next, as shown in FIG. 23, the support 11 and the light absorbing layer 12 are peeled off from the wiring board 15.

[0130] Next, as shown in Fig. 24, the release layer 13 and the first seed layer 14 are removed. When a polyimide resin is used as the material of the release layer 13, the release layer 13 is removed by dry etching using O2 or CF2 plasma, according to one example. In another example, the release layer 13 is removed by a hydrazine-based or strong alkaline-based etching solution. It is preferable to remove the release layer 13 by dry etching.

[0131] When the first seed layer 14 comprises a first metal-containing layer made of titanium and a second metal-containing layer made of copper, the first metal-containing layer is removed, for example, using an alkaline etching agent, and the second metal-containing layer is removed, for example, using an acidic etching agent. In this manner, composite wiring board 100 is obtained.

[0132] After removing the release layer 13 and the first seed layer 14, a surface treatment layer 17 may be formed on the surface of the conductor layer 152A.

[0133] In the above-described method, peeling occurs at the interface between the light absorbing layer 12 and the release layer 13, but peeling may also occur at the interface between the release layer 13 and the first seed layer .

[0134] The above-described composite wiring board 100 can be used, for example, in the manufacture of a packaged device. The packaged device includes, for example, the above-described first wiring board 20, wiring board 15, and a functional device. Hereinafter, a method for manufacturing a packaged device using composite wiring board 100 will be described with reference to FIG.

[0135] First, a functional device and the composite wiring board 100 shown in FIG. 24 are prepared.

[0136] The functional device is, for example, a semiconductor chip, or a chip in which circuits and elements are formed on a substrate made of a material other than a semiconductor, such as a glass substrate. In this example, the functional device is a semiconductor chip. That is, the packaged device is a semiconductor package.

[0137] 25, the composite wiring board 100 and the functional device 50 are bonded together. The functional device 50 and the composite wiring board 100 are bonded together, for example, so as to face each other. Specifically, the functional device 50 and the surface of the composite wiring board 100 on the wiring board 15 side are bonded together so as to face each other.

[0138] The functional device 50 is joined to the composite wiring board 100 via the second bonding portion 51. Specifically, the functional device 50 is joined to the conductor layer 152D via the second bonding portion 51. Here, the functional device 50 is joined to the composite wiring board 100 by flip chip bonding. One or more of the functional devices 50 may be joined to the composite wiring board 100 by other bonding methods such as wire bonding.

[0139] The second joints 51 are arranged at a narrow pitch between the functional device 50 and the composite wiring board 100. The second joints 51 are made of, for example, copper pillars or solder. When the functional device 50 is bonded to the composite wiring board 100 by wire bonding, for example, a gold wire can be used to electrically connect the functional device 50 and the composite wiring board 100.

[0140] 25, the second underfill 52 is filled in the portion between the functional device 50 and the composite wiring board 100. The material of the second underfill 52 is, for example, the same as that described for the first underfill 31.

[0141] Next, as shown in FIG. 25, the functional device is sealed with a sealing resin 53. The sealing resin 53 may be a mixture of one or more resins selected from the group consisting of epoxy resin, urethane resin, silicone resin, polyester resin, oxetane resin, and maleimide resin, and a filler such as silica, titanium oxide, aluminum oxide, magnesium oxide, or zinc oxide. It is preferable that the material of the sealing resin 53 is different from the material of the second underfill 52. The sealing resin 53 can be formed by, for example, compression molding or transfer molding.

[0142] 25, third metal bumps 60 are formed on the surface of the composite wiring board 100 on the side of the first wiring board 20 where the electrodes 25 are exposed. The third metal bumps 60 are used, for example, for bonding to a motherboard. The material of the third metal bumps 60 is, for example, the same as that described for the first metal bumps 18. In this manner, a packaged device 300 is obtained.

[0143] 25, the arrangement interval of the first joints 30 is preferably narrower than the arrangement interval of the second joints 51. In this case, the wiring board 15 can be easily joined to both the functional device 50 and the first wiring board 20.

[0144] 25, the side surface of wiring board 15 is covered with sealing resin 53, but the side surface of wiring board 15 does not have to be covered with sealing resin 53. Also, in FIG. 25, packaged device 300 includes multiple functional devices 50, but packaged device 300 may include only one functional device 50.

[0145] <Method of Manufacturing a Wiring Board With a Functional Device> An example of a method for manufacturing a wiring board with a functional device will be described below with reference to Figures 26 to 31. Note that the outermost insulating layer 16 and the surface treatment layer 17 are omitted in Figures 26 to 31.

[0146] First, a wiring board 1 with a support body and a functional device shown in FIG. 14 are prepared.

[0147] Next, as shown in Fig. 26, the functional device 50 is bonded to the wiring board 1 with the support body shown in Fig. 14. The functional device 50 and the wiring board 1 with the support body are bonded, for example, so as to face each other. Specifically, the functional device 50 and the surface of the wiring board 1 with the support body facing the wiring board 15 are bonded so as to face each other.

[0148] The functional device 50 is bonded to the support body-attached wiring board 1 via the second bond portion 51. Specifically, the functional device 50 is bonded to the conductor layer 152D via the second bond portion 51.

[0149] 27, a second underfill 52 is filled in the portion between the functional device 50 and the wiring board 1 with the support body. By filling the second underfill 52, the functional device 50 is fixed to the wiring board 1 with the support body, and the second joint portion 51 is sealed.

[0150] Next, as shown in FIG. 28, the functional device 50 is sealed with a sealing resin 53.

[0151] Next, as shown in Fig. 29, the light absorbing layer 12 is irradiated with laser light 40. Specifically, for example, the light absorbing layer 12 is irradiated with laser light 40 from the surface on the support 11 side of the composite of the functional device 50 and the support-attached wiring board 1. The white arrow shown in Fig. 29 indicates the moving direction of the laser light 40.

[0152] The laser light 40 has a specific wavelength. For example, the specific wavelength is within the ultraviolet wavelength range to the infrared wavelength range. When the specific wavelength is within the ultraviolet wavelength range, the specific wavelength is within the range of, for example, 150 nm to 400 nm. When the specific wavelength is within the infrared wavelength range, the specific wavelength is within the range of, for example, 700 nm to 2000 nm.

[0153] The output of the laser light 40 is preferably in the range of 0.05W to 25W, and more preferably in the range of 0.1W to 10W.

[0154] The irradiation energy per unit area of ​​the laser light 40 is 1 mJ / cm 2 ~1000mJ / cm 2 and preferably in the range of 10 mJ / cm 2 ~300mJ / cm 2 It is more preferable that the ratio is in the range of 1.

[0155] The number of times of irradiation with the laser light 40 is preferably one, but the number of times of irradiation may be multiple.

[0156] As described above, when the light absorbing layer 12 is irradiated with the laser light 40, the adhesion of the release layer 13 decreases.

[0157] Next, as shown in FIG. 30, the support 11 and the light absorbing layer 12 are peeled off from the wiring board 15.

[0158] Next, as shown in FIG. 31, the release layer 13 and the first seed layer 14 are removed. In this manner, a wiring board 200 with functional devices is obtained.

[0159] Instead of filling the portion between the functional device 50 and the wiring board 1 with the second underfill 52 after bonding the functional device 50 to the wiring board 1 with the support, an anisotropic conductive film (ACF) may be placed on the wiring board 1 with the support, and then the functional device 50 may be bonded to the wiring board 1 with the support. A film-like bonding material (NCF) may be used instead of the anisotropic conductive film. Also, instead of filling the portion between the functional device 50 and the wiring board 1 with the second underfill 52 after bonding the functional device 50 to the wiring board 1 with the support, a non-conductive paste (NCP) may be applied onto the wiring board 1 with the support, and then the functional device 50 may be bonded to the wiring board 1 with the support.

[0160] Furthermore, after removing the peeling layer 13 and the first seed layer 14, a surface treatment layer 17 may be formed on the surface of the conductor layer 152A. Furthermore, in the above-described method, the wiring board 200 with functional devices includes a plurality of functional devices 50, but the wiring board 200 with functional devices may include only one functional device 50.

[0161] The above-described wiring board 200 with functional devices can be used, for example, in the manufacture of packaged devices. An example of a method for manufacturing a packaged device using the wiring board 200 with a functional device will be described below.

[0162] First, a wiring board 200 with a functional device shown in FIG. 31 is prepared. Next, the surface treatment layer 17 is formed on the surface of the conductor layer 152A included in the wiring board 200 with the functional device.

[0163] Next, a first metal bump 18 is formed on the surface treatment layer 17 . Next, first wiring board 20 shown in FIG. 19 is prepared, and second metal bumps 27 and first metal bumps 18 of first wiring board 20 are bonded to each other.

[0164] Next, a first underfill 31 is filled in the area between the first wiring board 20 and the wiring board 200 with the functional device. Next, third metal bumps 60 are formed on the surface of first wiring board 20 in areas where electrodes 25 are exposed.

[0165] In this manner, a packaged device 300 is obtained. The surface treatment layer 17 formed on the surface of the conductor layer 152A may be omitted.

[0166] <Effects> When the light absorbing layer 12 is omitted in the above-mentioned wiring board 1 with the support, in order to peel off the support 11 from the wiring board 15, for example, it is necessary to irradiate the peeling layer 13 with a laser beam having an ultraviolet wavelength multiple times to cause a sufficient change in quality to cause a decrease in the adhesion of the peeling layer 13. However, when a laser beam having a high energy density, such as a laser beam having an ultraviolet wavelength, is irradiated, the wiring board 15 is likely to be damaged. In addition, in this case, a high-output laser device is required.

[0167] Furthermore, when the light absorption layer 12 is omitted in the above-mentioned support-attached wiring board 1, even if the peeling layer 13 is irradiated with laser light having a relatively low energy density, such as laser light having an infrared wavelength, the peeling layer 13 is unlikely to be altered sufficiently to cause a decrease in adhesion.

[0168] Furthermore, if the lamination order of the light absorbing layer 12 and the release layer 13 is reversed in the above-mentioned support-attached wiring board 1, the light absorbing layer 12 and the release layer 13 are likely to remain on the surface of the first seed layer 14 in the process of manufacturing the composite wiring board 100. In this case, in addition to removing the release layer 13 and the first seed layer 14, it is necessary to further remove the light absorbing layer 12.

[0169] On the other hand, the above-mentioned wiring board 1 with the support includes a light absorbing layer 12 between the peeling layer 13 and the support 11, the light absorbing layer 12 exhibiting a higher light absorption rate than the peeling layer. Such a light absorbing layer 12 is more likely to generate heat by irradiation with laser light than the peeling layer 13. For this reason, in the above-mentioned wiring board 1 with the support, deterioration sufficient to cause a decrease in the adhesion of the peeling layer 13 is more likely to occur than in the case where the light absorbing layer 12 is omitted.

[0170] For this reason, even when laser light having an infrared wavelength is used, in the above-described wiring board 1 with support body, support body 11 can be easily peeled off from wiring board 15. In this case, wiring board 15 is less likely to be damaged.

[0171] Furthermore, when a laser beam having an ultraviolet wavelength is used, the above-described wiring board 1 with the support can peel off the support 11 from the wiring board 15 under milder irradiation conditions, for example, a shorter irradiation time and lower output, compared to a wiring board with a support that omits the light absorbing layer 12. Even in this case, the wiring board 15 is less likely to be damaged.

[0172] Moreover, the above-mentioned wiring board 1 with support has the support 11, the light absorbing layer 12, and the release layer 13 in this order. Therefore, as shown in FIG. 23, in the manufacturing process of the composite wiring board 100, the release layer 13 may remain on the surface of the first seed layer 14. Alternatively, no layer may remain on the surface of the first seed layer 14. In these cases, the step of removing the light absorbing layer 12 is not necessary. Therefore, the number of etching steps required after the support 11 is peeled off may be reduced.

[0173] Furthermore, in the above-mentioned wiring board 1 with a support, the laser light 40 reaches the light absorbing layer 12 without passing through the peeling layer 13, so that the laser light is not absorbed by the peeling layer 13 before the laser light 40 reaches the light absorbing layer 12.

[0174] In the above-mentioned wiring board 1 with the support, it is preferable that the light absorbing layer 12 and the peeling layer 13 are in contact with each other. When the light absorbing layer 12 and the peeling layer 13 are in contact with each other, heat generated by the laser light 40 is easily conducted to the peeling layer 13, so that the support 11 is easily peeled off from the wiring board 15.

[0175] In the above-described wiring board 1 with the support, the support 11 is preferably in contact with the light absorbing layer 12. When the support 11 is in contact with the light absorbing layer 12, the amount of heat generated by the light absorbing layer 12 is large, so that the support 11 is likely to peel off from the wiring board 15.

[0176] By using the above-described wiring board 1 with support, support 11 can be easily peeled off from wiring board 15 also in the manufacturing methods of composite wiring board 100, wiring board 200 with functional device, and packaged device 300. Furthermore, in these manufacturing methods, wiring board 15 is less likely to be damaged when irradiated with a laser beam having an infrared wavelength or when irradiated with a laser beam having an ultraviolet wavelength for a short period of time.

[0177] As mentioned above, there is a technology for providing a silicon interposer including a silicon wafer between an FC-BGA substrate and a semiconductor chip. In this technology, the shape and dimensions of the silicon wafer that can be used are limited, so the number of interposers that can be manufactured from one silicon wafer is small. In addition, the manufacturing equipment for silicon wafers is expensive, so silicon interposers are also expensive. In addition, silicon wafers are made of semiconductors, so they have high resistance. For this reason, the transmission characteristics of silicon interposers can deteriorate.

[0178] Furthermore, in the method of directly fabricating multi-layer wiring layers on an FC-BGA substrate using chemical mechanical polishing (CMP) or the like, the deterioration of the transmission characteristics described above is small, but the manufacturing yield of the FC-BGA substrate itself is low. In addition, it is difficult to form fine wiring on an FC-BGA substrate. For this reason, the manufacturing yield of the above method is likely to be low. Furthermore, problems may arise in mounting semiconductor chips due to warping or distortion of the FC-BGA substrate. EXAMPLES

[0179] Examples and comparative examples are given below. <Example 1> A laminate including a support, a light absorbing layer, a release layer, a first seed layer, and a conductor layer was produced by the following method.

[0180] First, a glass substrate having a thickness of 1.1 mm was prepared as a support. Next, a light absorbing layer was formed on one of the supporting surfaces of the support by sputtering titanium on the support. The thickness of the light absorbing layer was 20 nm.

[0181] Next, a release layer was formed on the light absorbing layer. The release layer was formed by spin coating a polyimide resin. As the polyimide resin, "UPIA (registered trademark)" manufactured by Ube Industries, Ltd. was used. The thickness of the release layer was 500 nm.

[0182] Next, a first seed layer was formed on the release layer. Specifically, a first metal-containing layer made of titanium was formed on the release layer by sputtering, and then a second metal-containing layer made of copper was formed on the first metal-containing layer by electrolytic plating. The thicknesses of the first metal-containing layer and the second metal-containing layer were 50 nm and 300 nm, respectively.

[0183] Next, a copper layer was formed on the first seed layer by electrolytic plating to a thickness of 20 μm.

[0184] In this manner, a laminate was obtained.

[0185] <Example 2> A laminate was produced in the same manner as in Example 1, except that the thickness of the light absorbing layer was changed from 20 nm to 50 nm.

[0186] <Example 3> A laminate was produced in the same manner as in Example 1, except that the thickness of the light absorbing layer was changed from 20 nm to 100 nm.

[0187] <Example 4> A laminate was produced in the same manner as in Example 1, except that the thickness of the light absorbing layer was changed from 20 nm to 200 nm.

[0188] <Comparative Example 1> A laminate was produced in the same manner as in Example 1, except that the light absorbing layer was omitted.

[0189] <Comparative Example 2> A laminate was produced in the same manner as in Example 1, except that the light absorbing layer and the release layer were omitted.

[0190] <Comparative Example 3> A laminate was produced in the same manner as in Example 1, except that the thickness of the light absorbing layer was changed from 20 nm to 50 nm and the release layer was omitted.

[0191] <Evaluation> The laminates according to Examples 1 to 4 and Comparative Examples 1 to 3 were irradiated from the support side with a solid UV laser having a wavelength of 355 nm and a YAG laser (IR laser) having a wavelength of 1064 nm. Then, it was checked whether the support could be peeled off. The results are shown in Table 2 below. The irradiation energy per unit area of ​​the solid UV laser was 88.3 mJ / cm. 2 The irradiation was performed so that

[0192] [Table 2]

[0193] In the column labeled "UV laser" in Table 2, "good" indicates that the support was peelable after one irradiation with a power of 0.06 W. "passable" indicates that the support was not peelable after one irradiation with a power of 0.06 W, and was peelable after two irradiations with a power of 0.06 W. "failed" indicates that the support was not peelable even after three irradiations with a power of 0.06 W. In the column labeled "IR laser," "good" indicates that the support was peelable after one irradiation with a power of 2.5 W. "passable" indicates that the support was not peelable after one irradiation with a power of 2.5 W, and was peelable after two irradiations with a power of 2.5 W. "failed" indicates that the support was not peelable even after three irradiations with a power of 2.5 W.

[0194] As shown in Table 2, in the laminates according to Examples 1 to 4, the support could be peeled off regardless of whether a UV laser or an IR laser was used.

[0195] On the other hand, in the laminate according to Comparative Example 1, the support could be peeled off when a UV laser was used, but could not be peeled off when an IR laser was used, and in the laminates according to Comparative Examples 2 and 3, the support could not be peeled off when either a UV laser or an IR laser was used. [Explanation of symbols]

[0196] 10...wiring board with support, 11...support, 12...light absorbing layer, 13...peeling layer, 14...first seed layer, 15...wiring board, 16...top surface insulating layer, 17...surface treatment layer, 18...first metal bump, 20...first wiring board, 21...core layer, 22...conductor layer, 23...insulating resin, 24...layer, 25...electrode, 26...top surface insulating resin layer, 27...second metal bump, 30...first bonding portion, 31...first underfill, 40...laser light, 50...functional device, 51...second bonding portion, 52...second underfill Fill, 53...sealing resin, 60...third metal bump, 100...composite wiring board, 151A...resist layer, 151B...resist layer, 151C...resist layer, 152A...conductor layer, 152B...conductor layer, 152C...conductor layer, 152D...conductor layer, 153A...insulating layer, 153B...insulating layer, 153C...insulating layer, 154A...second seed layer, 154B...second seed layer, 154C...second seed layer, 200...wiring board, 241...conductor pattern, 242...insulating layer, 300...packaged device.

Claims

1. A support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; a wiring board facing the support surface; a release layer interposed between the support and the wiring board, the adhesion of which is reduced by heating; a light absorbing layer interposed between the support and the release layer; Equipped with The light absorbing layer exhibits a higher light absorptivity than the release layer.

2. 2. The wiring board with a support according to claim 1, wherein the light absorbing layer has a thickness in the range of 5 nm to 100 nm.

3. 3. The wiring board with a support according to claim 1, wherein the release layer has a thickness in the range of 10 nm to 50 [mu]m.

4. 4. A wiring board with a support according to claim 1, wherein the contour of a first orthogonal projection of the release layer onto a plane parallel to the support surface is inside the contour of a second orthogonal projection of the light absorbing layer onto the plane.

5. The support-attached wiring board according to claim 1 , wherein the light absorbing layer contains a metal, and the release layer contains a resin.

6. The wiring board with a support according to claim 1 , wherein the wiring board is a multilayer wiring board.

7. The wiring board with a support according to claim 6 , wherein the multilayer wiring board is an interposer.

8. A support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; a wiring board facing the support surface; a release layer interposed between the support and the wiring board, the adhesion of which is reduced by heating; a light absorbing layer interposed between the support and the release layer; Equipped with The light absorbing layer comprises one or more metals selected from the group consisting of titanium, chromium, tungsten, nickel, molybdenum, niobium, and tantalum.

9. forming a light absorbing layer on a support having a support surface and transmitting light having a specific wavelength in a direction perpendicular to the support surface; forming a release layer on the light absorbing layer, the release layer having an adhesion that decreases when heated; forming a wiring substrate on the release layer; Including, The method for producing a wiring board with a support, wherein the light absorbing layer exhibits a higher light absorptance than the release layer.

10. A method for manufacturing a wiring board according to claim 1 , comprising the steps of: joining a first wiring board to a wiring board as a second wiring board included in a wiring board with a support according to claim 1 ; Thereafter, the light absorbing layer is irradiated with a laser beam having the specific wavelength, and the support is peeled off from the wiring substrate. A method for manufacturing a composite wiring board comprising the steps of:

11. the laser light is irradiated onto the light absorbing layer from the support side, The method for manufacturing a composite wiring board according to claim 10, wherein the specific wavelength is within an infrared wavelength range.

12. A method for manufacturing a semiconductor device comprising the steps of: bonding a functional device to a wiring substrate with a support according to any one of claims 1 to 8; Thereafter, the light absorbing layer is irradiated with a laser beam having the specific wavelength, and the support is peeled off from the wiring substrate. The method for manufacturing a wiring board with a functional device comprising the steps of:

13. the laser light is irradiated onto the light absorbing layer from the support side, 13. The method for manufacturing a wiring board with a functional device according to claim 12, wherein the specific wavelength is within an infrared wavelength range.

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