Electrostatic Chuck

Abstract

To provide an electrostatic chuck capable of easily realizing a complex internal structure of a base plate. [Solution] The electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 bonded to the dielectric substrate 100. The base plate 200 has a first portion 201 which is a portion on the dielectric substrate 100 side, and a second portion 202 which is a portion adjacent to the first portion 201 from the opposite side to the dielectric substrate 100 and has an outer shape larger than that of the first portion 201 in a top view. The base plate 200 is formed by bonding a plurality of members, and a bonding boundary B1 closest to the dielectric substrate 100 is located in the second portion 202.

Description

[Technical field]

[0001] The present invention relates to an electrostatic chuck. [Background technology]

[0002] For example, in a semiconductor manufacturing device such as an etching device, an electrostatic chuck is provided as a device for attracting and holding a substrate such as a silicon wafer to be processed. The electrostatic chuck includes a dielectric substrate provided with an attracting electrode and a base plate for supporting the dielectric substrate, which are joined together. When a voltage is applied to the attracting electrode, an electrostatic force is generated, and the substrate placed on the dielectric substrate is attracted and held.

[0003] As described in Patent Document 1 below, a refrigerant flow path and the like for passing a refrigerant are formed inside the base plate. In order to facilitate the formation of the refrigerant flow path and the like, the base plate is generally configured by joining a plurality of members. For example, if a groove is formed on the surface of one member and another member is joined so as to cover the surface, a flow path along the groove can be easily formed inside the base plate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2015-35447 A Summary of the Invention [Problem to be solved by the invention]

[0005] In addition to the above-mentioned coolant flow paths, the base plate is also formed with a supply flow path for guiding gas to the mounting surface side of the dielectric substrate. A porous member for preventing discharge may be disposed inside the supply flow path. Thus, the internal structure of the base plate in the vicinity of the dielectric substrate is often relatively complex.

[0006] As described above, the base plate is generally configured by joining a plurality of members together. In order to realize the above-described complex internal structure, there is room for further improvement in conventional electrostatic chucks with respect to the position of the joining boundary between the members in the base plate.

[0007] The present invention has been made in view of the above problems, and an object of the present invention is to provide an electrostatic chuck that can easily realize a complex internal structure of a base plate. [Means for solving the problem]

[0008] In order to solve the above problems, an electrostatic chuck according to the present invention includes a dielectric substrate having a mounting surface on which an object to be attracted is placed, and a base plate joined to the dielectric substrate. The base plate has a first portion which is a portion on the dielectric substrate side, and a second portion which is adjacent to the first portion from the opposite side of the dielectric substrate and has an outer shape larger than that of the first portion when viewed from a direction perpendicular to the mounting surface. The base plate is formed by joining a plurality of members, and the joint boundary closest to the dielectric substrate is in the second portion.

[0009] In the electrostatic chuck having the above-described configuration, the base plate is formed by bonding a plurality of members, and the bonding boundary closest to the dielectric substrate is located in the second portion, not the first portion. Compared to when the bonding boundary is located in the first portion, the member closest to the dielectric substrate is thicker, which makes it easier to, for example, place a porous member in a gas supply flow path. This makes it easier to realize a complex internal structure in the base plate. Effect of the Invention

[0010] According to the present invention, it is possible to provide an electrostatic chuck that can easily realize a complex internal structure of a base plate. [Brief description of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view illustrating a schematic configuration of an electrostatic chuck according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram showing a schematic configuration of distribution channels and the like inside a base plate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the present embodiment will be described with reference to the accompanying drawings. In order to facilitate understanding of the description, the same components in each drawing are denoted by the same reference numerals as much as possible, and duplicated description will be omitted.

[0013] The electrostatic chuck 10 according to this embodiment is configured to electrostatically attract and hold a substrate W to be processed inside a semiconductor manufacturing apparatus (not shown), such as an etching apparatus. The substrate W to be attracted is, for example, a silicon wafer. The electrostatic chuck 10 may be used in an apparatus other than a semiconductor manufacturing apparatus.

[0014] 1 shows, in a schematic cross-sectional view, the configuration of an electrostatic chuck 10 in a state in which the electrostatic chuck 10 attracts and holds a substrate W. The electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200.

[0015] The dielectric substrate 100 is a substantially disk-shaped member made of a sintered ceramic body. The dielectric substrate 100 is made of, for example, high-purity aluminum oxide (Al 2 O 3 ), but may contain other materials. The purity, type, and additives of the ceramics in the dielectric substrate 100 can be appropriately set in consideration of the plasma resistance and other properties required of the dielectric substrate 100 in semiconductor manufacturing equipment. The diameter of the dielectric substrate 100 is, for example, 290 to 300 mm. The thickness of the dielectric substrate 100 is, for example, 0.5 to 3.0 mm.

[0016] 1 of the dielectric substrate 100 is a "mounting surface" on which the substrate W is placed. Also, a lower surface 120 of the dielectric substrate 100 in FIG. 1 is a "joined surface" that is joined to the base plate 200 via a joining layer 300. The viewpoint when the electrostatic chuck 10 is viewed from the side of the surface 110 along a direction perpendicular to the surface 110 will hereinafter be referred to as a "top view".

[0017] An adsorption electrode 130 is embedded inside the dielectric substrate 100. The adsorption electrode 130 is a thin flat layer made of a metal material such as tungsten, and is arranged parallel to the surface 110. The material of the adsorption electrode 130 may be tungsten, molybdenum, platinum, palladium, or the like. When a voltage is applied to the adsorption electrode 130 from the outside through a power supply path (not shown), an electrostatic force is generated between the surface 110 and the substrate W, thereby adsorbing and holding the substrate W. As the configuration of the power supply path, various known configurations can be adopted. The adsorption electrode 130 may be provided as a single so-called "monopolar" electrode as in this embodiment, or may be provided as two so-called "bipolar" electrodes. The depth at which the adsorption electrode 130 is arranged, i.e., the distance from a bottom surface 116 described below to the adsorption electrode 130, is, for example, 0.1 to 0.5 mm.

[0018] 1, a space SP is formed between the dielectric substrate 100 and the substrate W. When a process such as etching is performed in the semiconductor manufacturing apparatus, helium gas for temperature adjustment is supplied from the outside to the space SP via a supply flow path 140 described below. By providing helium gas between the dielectric substrate 100 and the substrate W, the thermal resistance between them is adjusted, and the temperature of the substrate W is thereby maintained at an appropriate temperature. The temperature adjustment gas supplied to the space SP may be a type of gas other than helium.

[0019] A seal ring 111 and dots 112 are provided on a surface 110 serving as a mounting surface, and the above-mentioned space SP is formed around these.

[0020] The seal ring 111 is a wall that partitions the space SP at the outermost periphery. The seal ring 111 is an annular protrusion formed on the surface 110. The tip (the upper end in FIG. 1) of the seal ring 111 is part of the surface 110 and abuts against the substrate W. It can be said that the tip of the seal ring 111 is the outermost part of the surface 110, which is the mounting surface.

[0021] A plurality of seal rings 111 may be provided to divide the space SP. With such a configuration, the pressure of the helium gas in each space SP can be individually adjusted, and the surface temperature distribution of the substrate W during processing can be made closer to uniform.

[0022] 1, the portion marked with the reference symbol "116" is the bottom surface of the space SP. Hereinafter, this portion will also be referred to as the "bottom surface 116." The seal ring 111, together with the dots 112 described below, is formed by digging down a part of the surface 110 to the position of the bottom surface 116.

[0023] The dots 112 are circular protrusions protruding from the bottom surface 116. A plurality of dots 112 are provided and are distributed approximately evenly on the mounting surface of the dielectric substrate 100. The tip of each dot 112 forms part of the surface 110 and comes into contact with the substrate W. By providing a plurality of such dots 112, bending of the substrate W is suppressed.

[0024] A supply flow path 140 is formed in the dielectric substrate 100. The supply flow path 140 is a through hole formed to extend in a direction perpendicular to the surface 110, which is the mounting surface. The end of the supply flow path 140 on the surface 110 side is connected to the space SP. The supply flow path 140 is a part of a flow path for supplying helium gas toward the space SP. A plurality of supply flow paths 140 are formed in the dielectric substrate 100, but only one of them is shown in FIG. 1.

[0025] 1, the portion of the supply flow passage 140 on the surface 120 side has a larger diameter than the portion on the surface 110 side, and a porous member 160 is disposed inside the portion. The porous member 160 is a porous body made of alumina, for example, and has air permeability as a whole. By disposing such a porous member 160 on the inside of the supply flow passage 140, it is possible to suppress the occurrence of dielectric breakdown in the path through the supply flow passage 140 while ensuring the flow of helium gas in the porous member 160.

[0026] The base plate 200 is a substantially disk-shaped member that supports the dielectric substrate 100. The base plate 200 is formed of a metal material such as aluminum. The base plate 200 is bonded to the surface 120 of the dielectric substrate 100 via a bonding layer 300. Of the base plate 200, a surface 210 on the upper side in FIG. 1 is a "bonded surface" that is bonded to the dielectric substrate 100.

[0027] The bonding layer 300 is a layer provided between the dielectric substrate 100 and the base plate 200, and bonds the two together. The bonding layer 300 is formed by curing an adhesive made of an insulating material. In this embodiment, a silicone adhesive is used as the adhesive. However, the bonding layer 300 may be formed by curing another type of adhesive. In any case, it is preferable to use a material with as high a thermal conductivity as possible as the material for the bonding layer 300 so that the thermal resistance between the dielectric substrate 100 and the base plate 200 is small.

[0028] An insulating film may be formed on the surface of the base plate 200. For example, an alumina film formed by thermal spraying can be used as the insulating film. By covering the surface of the base plate 200 with the insulating film, the dielectric strength of the base plate 200 can be increased.

[0029] The base plate 200 has a first portion 201 and a second portion 202. The first portion 201 is a portion of the base plate 200 on the dielectric substrate 100 side (upper side in FIG. 1), and is a substantially cylindrical portion that directly supports the dielectric substrate 100 from below. The diameter of the first portion 201, i.e., the diameter of the surface 210, may be the same as the diameter of the dielectric substrate 100, or may be slightly smaller than the diameter of the dielectric substrate 100. The diameter of the first portion 201 is, for example, 290 to 300 mm. The thickness of the first portion 201, i.e., the amount of protrusion of the first portion 201 toward the upper side in FIG. 1 (the amount of protrusion from the second portion 202) is, for example, 3 to 15 mm.

[0030] The second portion 202 is a portion of the base plate 200 adjacent to the first portion 201 from the opposite side to the dielectric substrate 100 (the lower side in FIG. 1). In this embodiment, the entire portion of the base plate 200 except the first portion 201 is the second portion 202. The shape of the second portion 202 is substantially cylindrical, and the central axis thereof coincides with the central axis of the first portion 201. The thickness of the second portion 202 is, for example, 25 to 40 mm. The diameter of the second portion 202 is larger than the diameter of the first portion 201. The amount of protrusion of the second portion 202 from the outer surface of the first portion 201 (i.e., the amount of protrusion in the radial direction) is, for example, 20 to 30 mm. Therefore, the outer shape of the first portion 201 in a top view is larger than the outer shape of the second portion 202 in a top view.

[0031] When the substrate W is processed in the semiconductor manufacturing equipment, a focus ring (not shown) is installed on the upper surface 203 of the second portion 202. The focus ring is an annular, plate-like member made of an insulating material such as quartz, and is installed for the purpose of adjusting the distribution of plasma during processing. The dielectric substrate 100 and the first portion 201 are substantially entirely surrounded by the focus ring from the outer periphery.

[0032] A coolant flow path 270 for passing a coolant is formed inside the base plate 200. When a process such as etching is performed in the semiconductor manufacturing apparatus, a coolant is supplied to the coolant flow path 270 from the outside, thereby cooling the base plate 200. Heat generated in the substrate W during the process is transferred to the coolant via the helium gas in the space SP, the dielectric substrate 100, and the base plate 200, and is discharged to the outside together with the coolant.

[0033] 1, coolant flow path 270 is routed not only in a portion of base plate 200 that is directly below substrate W, but also in a portion outside of directly below substrate W. The coolant passing through the outer portion cools a focus ring (not shown) and the like that are located directly above upper surface 203, and the outer peripheral portion of substrate W is also cooled through these.

[0034] In this embodiment, the diameter of the second portion 202 is relatively large. By making the second portion 202 large and forming the coolant flow path 270 so as to extend over substantially the entire second portion 202, it is possible to suppress a temperature rise in the outer peripheral portion of the substrate W.

[0035] A supply flow path 240 is formed in the base plate 200. The supply flow path 240 is a hole formed so as to extend in a direction perpendicular to the surface 110, which is the mounting surface, and extends from the surface 210 to a distribution flow path 250, which will be described later. The supply flow paths 240 are formed at positions overlapping with the supply flow paths 140 in a top view, and are connected to the supply flow paths 140 via through holes 310 provided in the bonding layer 300. The supply flow paths 240, together with the supply flow paths 140 of the dielectric substrate 100, form part of a flow path for supplying helium gas toward the space SP on the mounting surface side.

[0036] 1, the portion of the supply flow passage 240 on the surface 210 side has a larger diameter than the portion on the distribution flow passage 250 side, and a porous member 260 is disposed inside the portion. The porous member 260 is a porous body made of alumina, for example, and has air permeability as a whole. By disposing such a porous member 260 inside the supply flow passage 240, it is possible to suppress the occurrence of dielectric breakdown in the path through the supply flow passage 240 while ensuring the flow of helium gas in the supply flow passage 240.

[0037] A distribution flow passage 250 is formed inside the base plate 200. The distribution flow passage 250 is a flow passage for distributing helium gas to each of the supply flow passages 240. The distribution flow passage 250 is routed in parallel to the surface 210, and is connected to the lower ends of each of the supply flow passages 240.

[0038] 2 is a schematic diagram of the distribution flow passage 250 inside the base plate 200, the supply flow passage 240 connected thereto, and the like. The arrows in FIG. 2 indicate the flow of helium gas. The portion marked with the reference symbol "251" in FIG. 2 indicates a flow passage for helium gas formed in the base plate 200 so as to guide the helium gas supplied from the outside to the distribution flow passage 250. This flow passage is also referred to as "flow passage 251" below. One end of the flow passage 251 is connected to the distribution flow passage 250. The other end of the flow passage 251 opens in the surface 220 of the base plate 200 opposite the surface 210.

[0039] As shown in FIG. 2, in this embodiment, the multiple supply flow paths 240 are arranged in a circular arrangement in a top view. The distribution flow path 250 is routed in a circular arrangement so as to pass directly below each of the supply flow paths 240 in a top view. The lower end of each of the supply flow paths 240 is connected to the distribution flow path 250. Therefore, helium gas supplied from the outside is supplied to the distribution flow path 250 through the flow path 251, and is distributed from the distribution flow path 250 to each of the supply flow paths 240. After that, the helium gas is supplied from each of the supply flow paths 240 to the space SP through the supply flow path 140 directly above it. By forming the distribution flow path 250 inside the base plate 200, the number of parts (i.e., the flow paths 251) that receive the supply of helium gas from the outside can be reduced.

[0040] In this manner, the base plate 200 has a relatively complicated internal structure with the coolant flow paths 270, the distribution flow paths 250, the supply flow paths 240, etc. formed therein. Furthermore, since the porous members 260 are disposed in the respective supply flow paths 240, the internal structure of the base plate 200 on the dielectric substrate 100 side becomes even more complicated.

[0041] In order to facilitate the formation of the coolant flow passage 270, the base plate 200 of this embodiment is formed by joining a plurality of members. Specifically, the base plate 200 is formed by joining together three members consisting of a first member C1, a second member C2, and a third member C3 into one body. The members are joined by welding, but may be joined by a method such as brazing or fastening. The number of members constituting the base plate 200 may be four or more, or may be two.

[0042] The first member C1, the second member C2, and the third member C3 are arranged in this order along a direction perpendicular to the surface 110, which is the mounting surface. The first member C1 is the portion of the members constituting the base plate 200 that is closest to the dielectric substrate 100. The surface 210 mentioned above is a part of the first member C1. The third member C3 is the portion of the members constituting the base plate 200 that is on the opposite side to the dielectric substrate 100. The surface 220 mentioned above is a part of the third member C3. The second member C2 is a member that is between the first member C1 and the third member C3.

[0043] A joint boundary B1 between the first member C1 and the second member C2 is parallel to the surface 110 and the surface 210. A joint boundary B2 between the second member C2 and the third member C3 is also parallel to the surface 110 and the surface 210.

[0044] Of the multiple bond boundaries, the bond boundary B1 is the bond boundary closest to the dielectric substrate 100. The first member C1 is a member located closer to the dielectric substrate 100 than the bond boundary B1. The second member C2 is a member joined to the first member C1 across the bond boundary B1.

[0045] As shown in FIG. 1, the distribution flow path 250 and the supply flow path 240 in this embodiment are both formed entirely in the first member C1. The distribution flow path 250 is an annular groove that is formed in advance along the surface of the first member C1 that will be the joining boundary B1 before the respective members are joined. In this way, by forming a groove in advance on the surface of the first member C1 and joining the second member C2 so as to cover the surface, the distribution flow path 250 along the groove can be easily formed inside the base plate 200. Note that the groove that becomes the distribution flow path 250 may be formed on the surface of the second member C2 that will be the joining boundary B1, rather than on the surface of the first member C1.

[0046] 1, the coolant flow path 270 in this embodiment is entirely formed in the second member C2. The coolant flow path 270 is a groove that is formed in advance along the surface of the second member C2 that will be the joining boundary B2 before the respective members are joined. In this way, by forming a groove in advance on the surface of the second member C2 and joining the third member C3 so as to cover the surface, the coolant flow path 270 along the groove can be easily formed inside the base plate 200. The groove that becomes the coolant flow path 270 may be formed on the surface of the second member C2 that will be the joining boundary B1.

[0047] However, if the bonding boundary B1 closest to the dielectric substrate 100 is located in the first portion 201, the first member C1 will be thinner than in this embodiment. As a result, it will be necessary to arrange each of the porous members 260 so as to straddle both the first portion 201 and the second portion 202. For example, the porous members 260 are inserted into the recesses of the second member C2, and the first member C1 is bonded to cover the surface of the second member C2 in a state in which each of the porous members 260 protrudes from the surface of the second member C2. At that time, the porous members 260 protruding from the surface of the second member C2 must be bonded while being aligned so that they fit into the recesses of the first portion 201. However, the porous members 260 are very small and fragile, and there are a large number of them. Therefore, it is very difficult to perform the above-mentioned alignment and other operations without damaging the porous members 260.

[0048] Therefore, the base plate 200 of this embodiment adopts a configuration in which the joint boundary B1 closest to the dielectric substrate 100 is located in the second portion 202, not in the first portion 201. In other words, a configuration is adopted in which the first portion 201 and a part of the second portion 202 are integrated into one member (first member C1) without a joint boundary. In this configuration, the first member C1 closest to the dielectric substrate 100 becomes thicker than when the joint boundary B1 is located in the first portion 201, so that it is possible to dispose the entire porous member 260 inside the first portion 201 as in this embodiment. When joining the first member C1 and the second member C2, there is no possibility of damaging the porous member 260, so that the above-mentioned operations such as alignment and joining can be easily performed. This makes it possible to easily realize a complex internal structure of the base plate 200.

[0049] The present embodiment has been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. Any design modifications made by a person skilled in the art to these specific examples are also included within the scope of the present disclosure as long as they have the features of the present disclosure. The elements of each of the above-mentioned specific examples and their arrangements, conditions, shapes, etc. are not limited to those exemplified and can be changed as appropriate. The combination of each of the elements of each of the above-mentioned specific examples can be changed as appropriate as long as no technical contradiction occurs. [Explanation of symbols]

[0050] 10: Electrostatic chuck 100: Dielectric substrate 110: Face 200: Base plate 201: Part 1 202:Second part C1: First component C2: Second member B1: Junction boundary 240: Supply channel 250: Distribution channel 260:Porous material

Claims

1. a dielectric substrate having a mounting surface on which an object to be attached is placed; a base plate joined to the dielectric substrate; The base plate is a first portion which is a portion on the dielectric substrate side; a second portion adjacent to the first portion from an opposite side to the dielectric substrate, the second portion having an outer shape larger than that of the first portion when viewed in a direction perpendicular to the mounting surface; The base plate is the dielectric layer is formed by bonding a plurality of members together, and a bonding boundary closest to the dielectric substrate is located in the second portion; Among the plurality of members constituting the base plate, a member located on the dielectric substrate side of the joint boundary is defined as a first member; When a member joined to the first member across the joint boundary is a second member, a supply flow path for supplying a gas to the placement surface side is formed in the first member so as to extend in a direction perpendicular to the placement surface; A plurality of the supply channels are formed, The base plate includes: A distribution flow path is further formed to distribute gas to the plurality of supply flow paths, The electrostatic chuck, characterized in that the distribution flow path is a groove formed in a surface that becomes the bonding boundary of either the first member or the second member.

2. An electrostatic chuck as described in claim 1, characterized in that a porous member is arranged inside the supply flow path.

3. An electrostatic chuck as described in claim 1, characterized in that the distribution flow path is a groove formed in a surface of the first member that becomes the joining boundary.

4. Among the plurality of members constituting the base plate, A member joined to the second member from the opposite side to the first member is defined as a third member. When A coolant passage for passing a coolant is formed inside the base plate, 2 . The electrostatic chuck according to claim 1 , wherein the coolant flow passage is a groove formed in a surface of the second member that is joined to the third member.

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