Semiconductor Device

Abstract

A transmission component according to the present invention comprising: a substrate including an insulator; a ground layer provided on the substrate; and a signal line provided on a first surface of the substrate and separated from the ground layer, wherein the width of the signal line on one end side of the substrate is greater than the width of the signal line on the other end side of the substrate, and the distance between the ground layer and the signal line on the one end side is greater than the distance between the ground layer and the signal line on the other end side.　

Description

[Technical field]

[0001] This disclosure Semiconductor Device This is regarding. [Background technology]

[0002] A device for amplifying a high-frequency signal includes a semiconductor element such as a transistor, and a transmission component for transmitting the high-frequency signal (Patent Document 1). The transmission component has a transmission line such as a microstrip line. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Publication No. 63-86904 Summary of the Invention [Problem to be solved by the invention]

[0004] The characteristic impedance of one end of a transmission component may differ from that of the other end. If the impedance changes, the loss of high-frequency signals increases. Semiconductor Device The purpose is to provide. [Means for solving the problem]

[0005] The transmission component disclosed herein comprises a substrate including an insulator, a ground layer provided on the substrate, and a signal line provided on a first surface of the substrate and spaced apart from the ground layer, wherein a width of the signal line at one end of the substrate is greater than a width of the signal line at the other end of the substrate, and a distance between the ground layer and the signal line at the one end is greater than a distance between the ground layer and the signal line at the other end.

[0006] The semiconductor device according to the present disclosure comprises a base, a transmission component provided on the base, and a semiconductor element provided on the base and electrically connected to the signal line of the transmission component by a bonding wire. Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress changes in characteristic impedance. [Brief description of the drawings]

[0008] [Figure 1A] FIG. 1A is a plan view illustrating a semiconductor device according to the first embodiment. [Figure 1B] FIG. 1B is a cross-sectional view taken along line AA in FIG. [Figure 2A] FIG. 2A is an enlarged plan view of the matching circuit components. [Figure 2B] FIG. 2B is a cross-sectional view taken along line BB in FIG. 2A. [Diagram 3] FIG. 3 is a cross-sectional view illustrating a semiconductor device according to a first comparative example. [Figure 4A] FIG. 4A is a cross-sectional view illustrating a matching circuit component according to the first modification. [Figure 4B] FIG. 4B is a perspective view illustrating a matching circuit component. [Figure 4C] FIG. 4C is a cross-sectional view illustrating a matching circuit component according to Modification 2. [Figure 5A] FIG. 5A is a plan view illustrating the semiconductor device according to the second embodiment. [Figure 5B] FIG. 5B is a cross-sectional view taken along line CC in FIG. 5A. [Figure 6] FIG. 6 is a plan view illustrating a semiconductor device according to Comparative Example 2. As shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] [Description of the embodiments of the present disclosure] First, the contents of the embodiments of the present disclosure will be listed and described.

[0010] One embodiment of the present disclosure is a transmission component comprising: (1) a substrate including an insulator; a ground layer provided on the substrate; and a signal line provided on a first surface of the substrate and spaced apart from the ground layer, wherein a width of the signal line at one end of the substrate is greater than a width of the signal line at the other end of the substrate, and a distance between the ground layer and the signal line at the one end is greater than a distance between the ground layer and the signal line at the other end. The characteristic impedance of the transmission component at the one end is equal to the characteristic impedance at the other end. This suppresses loss of high-frequency signals propagating through the transmission component. (2) The ground layer may be provided on a second surface of the substrate opposite to the first surface. The characteristic impedance of the transmission component at one end is equal to the characteristic impedance at the other end. This reduces loss of high-frequency signals propagating through the transmission component. (3) The second surface of the board may be inclined from one end side of the board toward the other end side of the board so as to approach the first surface. The characteristic impedance of the transmission component at the one end side becomes equal to the characteristic impedance at the other end side. This suppresses loss of high-frequency signals propagating through the transmission component. (4) The second surface of the substrate may have a step that approaches the first surface from one end of the substrate toward the other end of the substrate. The characteristic impedance of the transmission component at one end is equal to the characteristic impedance at the other end. This reduces loss of high-frequency signals propagating through the transmission component. (5) The substrate may include a plurality of laminated insulating layers, the ground layer may include a first metal layer provided on a second surface of the substrate opposite to the first surface, and a second metal layer provided between the plurality of insulating layers, and an end of the second metal layer on one end of the substrate may be located closer to the other end of the substrate than an end of the first metal layer on one end of the substrate. The characteristic impedance of the transmission component on one end becomes equal to the characteristic impedance on the other end. This suppresses loss of high-frequency signals propagating through the transmission component. (6) The ground layer may include a plurality of stacked second metal layers, and an end portion of one of the second metal layers that is closer to the signal line in the stacking direction of the insulating layers may be located closer to the other end of the board than an end portion of one of the second metal layers that is farther from the signal line in the stacking direction. The characteristic impedance of the transmission component at one end is equal to the characteristic impedance at the other end. This suppresses loss of high-frequency signals propagating through the transmission component. (7) A semiconductor device comprising a base, the above-mentioned transmission component provided on the base, and a semiconductor element provided on the base and electrically connected to the signal line of the transmission component by a bonding wire. The characteristic impedance of the transmission component at one end is equal to the characteristic impedance at the other end. This suppresses loss of high-frequency signals propagating through the transmission component. (8) The base includes a frame surrounding the semiconductor element and the transmission component, and a feedthrough provided on the frame and having a lead, the transmission component is located between the semiconductor element and the feedthrough, the signal line of the transmission component is electrically connected to the lead, the width of the signal line on one of the semiconductor element side and the feedthrough side is larger than the width of the signal line on the other of the semiconductor element side and the feedthrough side, and the distance between the ground layer and the signal line on the one side may be larger than the distance between the ground layer and the signal line on the other side. The characteristic impedance of the transmission component on one end side is equal to the characteristic impedance on the other end side. This suppresses loss of high-frequency signals propagating through the transmission component. (9) The base includes a frame surrounding the semiconductor element, and the transmission component is a feedthrough provided on the frame, and the width of the signal line on one of the semiconductor element side and the side opposite the semiconductor element side may be greater than the width of the signal line on the other of the semiconductor element side and the side opposite the semiconductor element side, and the distance between the ground layer and the signal line on the one side may be greater than the distance between the ground layer and the signal line on the other side. The characteristic impedance of the feedthrough on one end side is equal to the characteristic impedance on the other end side. This suppresses loss of high-frequency signals propagating through the feedthrough. (10) The plurality of bonding wires may extend along a direction connecting one end side and the other end side of the substrate of the transmission component. Since the lengths of the plurality of bonding wires are approximately the same, phase shifts of signals propagating through the bonding wires are suppressed.

[0011] [Details of the embodiment of the present disclosure] Specific examples of the transmission component and the semiconductor device according to the embodiments of the present disclosure will be described below with reference to the drawings. Note that the present disclosure is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope of the claims.

[0012] First Embodiment (Semiconductor Device) Fig. 1A is a plan view illustrating a semiconductor device 100 according to a first embodiment, and shows a lid 11, which will be described later, in a see-through manner. Fig. 1B is a cross-sectional view taken along line AA in Fig. 1A.

[0013] The semiconductor device 100 has a base 10, a lid 11, a frame 12, a transistor 14 (semiconductor element), a matching circuit component 16, and a feedthrough 18. The base 10 is formed of a metal such as a molybdenum / copper / molybdenum (Mo / Cu / Mo) laminate and a gold (Au) plating layer provided on the surface of the laminate, and has a reference potential (ground potential). The sides of the base 10 extend in the X-axis direction and the Y-axis direction. The Z-axis direction is perpendicular to the top surface of the base 10. The X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular.

[0014] The frame 12 is a ring-shaped member and is made of an insulating material such as ceramic. The transistor 14 and the matching circuit components 16 are disposed on the upper surface of the base 10 at a position surrounded by the frame 12. Openings are provided on both sides of the frame 12 in the Y-axis direction, and a feedthrough 18 is attached to each of the two openings. Of the two feedthroughs 18, the one on the transistor 14 side is referred to as feedthrough 18a, and the one on the matching circuit components 16 side is referred to as feedthrough 18b. From the top of FIG. 1A, the feedthrough 18a, the transistor 14, the matching circuit components 16, and the feedthrough 18b are arranged along the Y-axis direction.

[0015] The lid 11 is attached to the upper surface of the frame 12. The transistor 14 and the matching circuit components 16 are hermetically sealed by the lid 11, frame 12, and feedthrough 18. The lid 11 is made of a metal such as Kovar or a ceramic. If the transistor 14 has high moisture resistance, hermetic sealing is not necessary. In this case, the lid 11 is made of an insulator such as ceramic or plastic.

[0016] The transistor 14 is a semiconductor element including, for example, a field effect transistor (FET) using a nitride semiconductor. As shown in FIG. 1B, the transistor 14 has pads 14a, 14b, and 14c. The pad 14a is, for example, a source pad, and is provided on the surface of the transistor 14 on the base 10 side. The pads 14b and 14c are provided on the surface of the transistor 14 on the lid 11 side. The pad 14b is, for example, a gate pad. The pad 14c is, for example, a drain pad. To achieve high output, it is preferable that the longitudinal width of the transistor 14 is large, and is, for example, larger than the width of the signal line 32 of the feedthrough 18.

[0017] The matching circuit component 16 (transmission component) has a substrate 20, a signal line 22, and a metal layer 24, and functions as a capacitor to match impedance between the transistor 14 and the feedthrough 18b. The substrate 20 is an insulating substrate formed of ceramics such as aluminum oxide (Al2O3) and barium titanate (BaTiO3), and is a substrate including an insulator. The signal line 22 and the metal layer 24 are formed of metals such as copper (Cu), molybdenum (Mo), and tungsten (W), and alloys including these metals. The signal line 22 is provided on the upper surface of the substrate 20. The metal layer 24 is provided on the lower surface of the substrate 20, is a ground layer spaced apart from the signal line 22, and is electrically connected to the upper surface of the base 10. The substrate 20, the signal line 22, and the metal layer 24 form a microstrip line that propagates a high-frequency signal. The end surface of the substrate 20 on the transistor 14 side is surface 20a, and the end surface on the feedthrough 18b side is surface 20b.

[0018] 2A is an enlarged plan view of the matching circuit component 16. As shown in FIG. 2A, the planar shape of the signal line 22 is trapezoidal. The width W1 of the signal line 22 on the face 20a side is larger than the width W2 on the face 20b side. The width W1 is, for example, 4 mm, and the width W2 is, for example, 2 mm. The width of the signal line 22 continuously decreases from the face 20a side toward the face 20b side. The width W1 is, for example, 1.1 times or more, 1.5 times or more, 2 times or more, or 3 times or more the width W2.

[0019] FIG. 2B is a cross-sectional view taken along line BB in FIG. 2A. As shown in FIG. 2B, the signal line 22 and the metal layer 24 extend in the Y-axis direction from the surface 20a to the surface 20b of the substrate 20. The upper surface 20c (first surface) of the substrate 20 and the lower surface of the metal layer 24 are parallel to the upper surface of the base 10 and extend in the XY plane. The lower surface 20d (second surface) of the substrate 20 is inclined with respect to the surface 20c of the substrate 20 and approaches the surface 20c from the surface 20a side toward the surface 20b side. That is, the substrate 20 becomes continuously thinner from the surface 20a side toward the surface 20b side. The thickness T1 of the surface 20a side of the substrate 20 is larger than the thickness T2 of the surface 20b side. The thickness T1 is, for example, 0.5 mm, and the thickness T2 is, for example, 0.25 mm. The thickness T1 is, for example, 1.1 times or more, 1.5 times or more, 2 times or more, or 3 times or more than the thickness T2.

[0020] The upper surface of metal layer 24 is inclined with respect to the lower surface of metal layer 24. A thickness T3 of metal layer 24 on the surface 20a side is greater than a thickness T4 on the surface 20b side. Thickness T3 is, for example, 0.1 mm, and thickness T4 is, for example, 0.35 mm. The sum of the thickness of substrate 20 and metal layer 24 is constant from the surface 20a side to the surface 20b side.

[0021] As shown in FIG. 1B, the feedthrough 18 has a substrate 30, a signal line 32, a metal layer 34, and a lead 36, and is a transmission component that propagates a high-frequency signal. The substrate 30 is an insulating substrate formed of, for example, ceramic. The substrate 30 is rectangular in shape. The upper and lower surfaces of the substrate 30 are parallel to the upper surface of the base 10 and extend in the XY plane. The metal layer 34 is a ground layer provided on the lower surface of the substrate 30 and electrically connected to the upper surface of the base 10. The signal line 32 and the metal layer 34 are formed of metals such as Cu, Au, nickel (Ni), and titanium (Ti), as well as alloys containing these metals. The signal line 32 is formed on the upper surface of the substrate 30 by, for example, sputtering and deposition. The substrate 30, the signal line 32, and the metal layer 34 form a microstrip line. The lead 36 is formed of, for example, a metal, provided on the upper surface of the signal line 32, extends in the Y-axis direction, and protrudes outside the base 10.

[0022] The pad 14a of the transistor 14 is disposed on the surface of the base 10 and is electrically connected to the base 10. A plurality of bonding wires 40 electrically connect the lead 36 of the feedthrough 18a and the pad 14b of the transistor 14. A plurality of bonding wires 42 electrically connect the pad 14c of the transistor 14 and the signal line 22 of the matching circuit component 16. A plurality of bonding wires 44 electrically connect the signal line 22 and the lead 36 of the feedthrough 18b. The plurality of bonding wires 42 and 44 extend in the Y-axis direction. The lengths of the plurality of bonding wires 42 are equal to each other. The lengths of the plurality of bonding wires 44 are equal to each other. The bonding wires 40, 42 and 44 are formed of a metal such as Au, Al and Cu.

[0023] A high-frequency signal having a frequency of, for example, 2 GHz is input from the lead 36 of the feedthrough 18a, amplified by the transistor 14, input to the feedthrough 18b through the matching circuit component 16, and output to the outside of the semiconductor device 100 through the lead 36 of the feedthrough 18b. The feedthrough 18b may be the input side, and the feedthrough 18a may be the output side.

[0024] In order to suppress loss of high frequency signals, impedance matching is performed between the feedthrough 18a and the transistor 14, and impedance matching is performed between the transistor 14 and the feedthrough 18b. The matching circuit component 16 is a component for impedance matching between the transistor 14 and the feedthrough 18b. For example, the matching circuit component 16 functions as a capacitor, and the bonding wire 44 functions as an inductor.

[0025] A microstrip line is formed in the matching circuit component 16 and the feedthrough 18. The characteristic impedance of the microstrip line is determined by the width of the signal line and the thickness of the substrate (the distance between the signal line and the ground layer). The wider the signal line, the lower the characteristic impedance, and the narrower the width, the higher the characteristic impedance. The thicker the substrate, the higher the characteristic impedance, and the thinner the thickness, the lower the characteristic impedance.

[0026] The width of the signal line 32 of the feedthrough 18 is constant from one end to the other in the Y-axis direction. The distance in the Z-axis direction between the signal line 32 of the feedthrough 18 and the metal layer 34 is constant. Therefore, the characteristic impedance of the feedthrough 18 on the transistor 14 side is equal to the characteristic impedance on the opposite side (the tip side of the lead 36).

[0027] The width of the signal line 22 of the matching circuit component 16 decreases from the surface 20a toward the surface 20b. The distance between the signal line 22 and the metal layer 24 decreases from the surface 20a toward the surface 20b. Therefore, the characteristic impedance of the matching circuit component 16 on the surface 20a side is approximately the same as the characteristic impedance on the surface 20b side.

[0028] FIG. 3 is a cross-sectional view illustrating a semiconductor device 100C according to a first comparative example. The same configuration as that of the semiconductor device 100 will not be described. As shown in FIG. 3, the lower surface of the substrate 20 of the matching circuit component 16 is not inclined, and the metal layer 24 is not inclined either. The thickness of the substrate 20 is constant from the surface 20a side to the surface 20b side. Meanwhile, the width of the signal line 22 changes between the surface 20a side and the surface 20b side, as in the example of FIG. 2A. The change in the width of the signal line 22 changes the characteristic impedance of the matching circuit component 16. The characteristic impedance Za on the surface 20a side becomes lower than the characteristic impedance Zb on the surface 20b side, and impedance conversion occurs between the surface 20a side and the surface 20b side. This increases the loss of the high-frequency signal propagating through the matching circuit component 16. For example, an impedance mismatch occurs between the matching circuit component 16 and the feedthrough 18b, resulting in a loss of the high-frequency signal.

[0029] According to the first embodiment, the substrate 20, the signal line 22, and the metal layer 24 of the matching circuit component 16 form a microstrip line. As shown in FIG. 2A, the width W1 of the signal line 22 on the surface 20a side is larger than the width W2 on the surface 20b side. As shown in FIG. 2B, the distance T1 (thickness of the substrate 20) between the signal line 22 and the metal layer 24 on the surface 20a side is larger than the distance T2 on the surface 20b side. This makes the characteristic impedance Za of the microstrip line on the surface 20a side approximately equal to the characteristic impedance Zb on the surface 20b side. The impedance conversion between the surfaces 20a and 20b sides is suppressed, thereby suppressing the loss of high-frequency signals.

[0030] The characteristic impedance Za and the characteristic impedance Zb may be exactly the same or may be very close to each other. For example, the substrate 20 is made of Al2O3 with a relative dielectric constant of 9.8, and has a width W1 of 4 mm, a width W2 of 2 mm, a thickness T1 of 0.5 mm, and a thickness T2 of 0.25 mm. The characteristic impedance Za is 12.11 Ω, and the characteristic impedance Zb is 12.10 Ω. The difference between the characteristic impedance Za and the characteristic impedance Zb is, for example, 10% or less, 5% or less, 1% or less, 0.5% or less of the characteristic impedance Za.

[0031] As shown in FIG. 2A, the width of the signal line 22 is continuously reduced from the surface 20a to the surface 20b. As shown in FIG. 2B, the lower surface 20d of the substrate 20 is inclined from the surface 20a to the surface 20b so as to gradually approach the upper surface 20c. In other words, the distance between the signal line 22 and the metal layer 24 (the thickness of the substrate 20) is continuously reduced from the surface 20a to the surface 20b. The width of the signal line 22 and the thickness of the substrate 20 are continuously changed, so that the characteristic impedance is approximately constant from the surface 20a to the surface 20b. A transmission line that does not change the characteristic impedance can be formed, and the loss of high-frequency signals is suppressed.

[0032] It is preferable to increase the width of the transistor 14 to achieve higher output. As the width increases, the width W1 of the signal line 22 of the matching circuit component 16 is also increased. Meanwhile, the width W2 of the signal line 22 is smaller than the width W1 to match the width of the signal line 32 of the feedthrough 18. That is, the signal line 22 is trapezoidal rather than rectangular, and the widths W1 and W2 are different. The signal line 22 and the transistor 14 are connected by a bonding wire 42. The signal line 22 and the feedthrough 18 are connected by a bonding wire 44.

[0033] The multiple bonding wires 42 and 44 extend in the Y-axis direction. The multiple bonding wires 42 are equal in length and have equal impedances. The multiple bonding wires 44 are equal in length and have equal impedances. This suppresses phase shifts in high frequency signals.

[0034] The matching circuit component 16 may have a transmission line other than a microstrip line. For example, a stripline may be provided. The matching circuit component 16 has a substrate and a metal layer (ground layer) on the signal line 22. The thickness of at least one of the upper and lower substrates is changed between the surface 20a side and the surface 20b side to equalize the characteristic impedance.

[0035] (Variation 1) FIG. 4A is a cross-sectional view illustrating a matching circuit component 16a according to the first modification. The signal line 22 of the matching circuit component 16a is trapezoidal, as in FIG. 2A. The substrate 20 of the matching circuit component 16a is a multilayer substrate having a plurality of insulator layers 50-53 and metal layers 54a-54c. The insulator layers 50-53 are stacked in order from the bottom, and adjacent insulator layers are joined to each other. The metal layer 24 is provided on the lower surface 20d of the insulator layer 50. The metal layer 54a is provided between the insulator layer 50 and the insulator layer 51. The metal layer 54b is provided between the insulator layer 51 and the insulator layer 52. The metal layer 54c is provided between the insulator layer 52 and the insulator layer 53. The signal line 22 is provided on the upper surface 20c of the insulator layer 53.

[0036] The distance T5 from the signal line 22 to the metal layer 24 (the thickness of the substrate 20) is, for example, 1 mm. The distance T6 from the signal line 22 to the metal layer 54a (the combined thickness of the insulator layers 51-53) is smaller than the distance T5, for example, 0.75 mm. The distance T7 from the signal line 22 to the metal layer 54b (the combined thickness of the insulator layers 52-53) is smaller than the distance T6, for example, 0.5 mm. The distance T8 from the signal line 22 to the metal layer 54c (the thickness of the insulator layer 53) is smaller than the distance T7, for example, 0.25 mm.

[0037] 4B is a perspective view illustrating a matching circuit component 16a. A via hole 21 is provided penetrating the substrate 20 in the Z-axis direction. A metal layer 23 is provided on the inner wall of the via hole 21. The metal layers 24, 54a to 54c are electrically connected to each other by the metal layer 23 and have a reference potential (ground potential). The signal line 22 is spaced apart from the metal layers 24, 54a to 54c.

[0038] As shown in FIG. 4A, the signal line 22, the metal layer 24, and the metal layers 54a to 54c extend in the Y-axis direction. One end (the right end in FIG. 4A) of each of the signal line 22, the metal layer 24, and the metal layers 54a to 54c is located on the surface 20b of the substrate 20. The other end (the left end in FIG. 4A) of each of the signal line 22 and the metal layer 24 is located on the surface 20a. The other end of the metal layer 54a is located between the surfaces 20a and 20b. The other end of the metal layer 54b is located between the other end of the metal layer 54a and the surface 20b. The other end of the metal layer 54c is located between the other end of the metal layer 54b and the surface 20b. The ends of the metal layers 24, 54a, 54b, and 54c on the surface 20a side approach the surface 20b in this order.

[0039] According to the first modification, similarly to the first embodiment, the characteristic impedance Za of the microstrip line on the surface 20a side is approximately equal to the characteristic impedance Zb on the surface 20b side. Phase changes of high frequency signals are suppressed, and losses are suppressed. The number of insulator layers in the substrate 20 may be four or more, or four or less. The number of metal layers may be three or more, or three or less. Since there is no need to form slopes and steps in the insulators and metal layers, the matching circuit component 16a can be easily manufactured.

[0040] (Variation 2) 4C is a cross-sectional view illustrating a matching circuit component 16b according to Modification 2. A surface 20d of a substrate 20 of the matching circuit component 16b has a stepped shape, and the surface 20c is gradually approached from the surface 20a side to the surface 20b side. A metal layer 24 has a stepped shape corresponding to the surface 20d.

[0041] According to the second modification, similarly to the first embodiment, the characteristic impedance Za of the microstrip line on the surface 20a side is approximately equal to the characteristic impedance Zb on the surface 20b side. The phase change of the high frequency signal is suppressed, and the loss is suppressed. Either the substrate 20 or the metal layer 24 may have a slope, and the other may have a step shape. The substrate 20 and the metal layer 24 are bonded to each other by filling a conductive adhesive between them.

[0042] <Second embodiment> (Semiconductor Device) FIG. 5A is a plan view illustrating a semiconductor device 200 according to the second embodiment. The same configuration as in the first embodiment will not be described. As shown in FIG. 5A, the planar shape of the signal line 22 of the matching circuit component 16 is, for example, rectangular, and the width of the signal line 22 is constant from the face 20a side to the face 20b side. The planar shape of the signal line 32 of the feedthrough 18 is trapezoidal. The width of the signal line 32 on the transistor 14 side is larger than the width on the opposite side (the tip side of the lead 36). The portion of the lead 36 that contacts the upper surface of the signal line 32 is trapezoidal like the signal line 32.

[0043] The bonding wires 40, 42, and 44 each extend in the Y-axis direction. The multiple bonding wires 40 have the same length. The multiple bonding wires 42 have the same length. The multiple bonding wires 44 have the same length.

[0044] Fig. 5B is a cross-sectional view taken along line CC in Fig. 5A. As shown in Fig. 5B, the upper and lower surfaces of the substrate 20 of the matching circuit component 16 are parallel to the upper surface of the base 10, and the thickness of the substrate 20 is constant. The thickness of the metal layer 24 is also constant. The lower surface of the substrate 30 of the feedthrough 18 is inclined, approaching the upper surface from the transistor 14 side to the tip side of the lead 36. The metal layer 34 is inclined corresponding to the substrate 30.

[0045] 6 is a plan view illustrating a semiconductor device 200C according to Comparative Example 2. The signal line 32 and the lead 36 of the feedthrough 18 are rectangular and have a constant width. The cross section of the semiconductor device 200C is the same as that of the semiconductor device 100C shown in FIG. 3, and the distance between the signal line 32 and the metal layer 34 of the feedthrough 18 is constant. The characteristic impedance of the feedthrough 18 on the transistor 14 side is equal to the characteristic impedance on the opposite side.

[0046] As shown in Fig. 6, of the bonding wires 40 and 44, those on the outside in the X-axis direction extend obliquely with respect to the Y-axis direction. Of the bonding wires 40 and 44, those in the center in the X-axis direction extend in the Y-axis direction. Of the multiple bonding wires 40, the outer ones are longer than the central ones. Of the multiple bonding wires 44, the outer ones are longer than the central ones. Due to the difference in length of the bonding wires, a phase shift occurs in the high-frequency signal in the X-axis direction, increasing loss.

[0047] 5A, by increasing the width of a portion of the signal line 32, the lengths of the bonding wires 40 and the lengths of the bonding wires 44 can be made constant. However, due to the change in the width of the signal line 32, the characteristic impedance on the transistor 14 side of the feedthrough 18 becomes lower than the characteristic impedance on the opposite side.

[0048] According to the second embodiment, as shown in FIG. 5A, the width of the signal line 32 on the transistor 14 side is larger than the width on the opposite side. Therefore, the lengths of the bonding wires 40 and the bonding wires 44 can be made constant. The loss of high-frequency signals can be suppressed. As shown in FIG. 5B, the lower surface of the substrate 30 of the feedthrough 18 is inclined. The distance between the signal line 32 of the feedthrough 18 on the transistor 14 side and the metal layer 34 is larger than the distance on the opposite side. Therefore, the characteristic impedance of the feedthrough 18 on the transistor 14 side is approximately the same as the characteristic impedance on the opposite side of the feedthrough 18. The loss of high-frequency signals is suppressed.

[0049] The substrate 30 of the feedthrough 18 may be a multi-layer substrate as shown in Figures 4A and 4B. The substrate 30 and the metal layer 34 may be provided with a step as shown in Figure 4C.

[0050] Although the embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to such specific embodiments, and various modifications and variations are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0051] 10 Base 11 Lid 12 Frame 14 Transistor 14a, 14b, 14c Pads 16, 16a, 16b Matching circuit components 18, 18a, 18b Feedthrough 20, 30 board 20a, 20b, 20c, 20d sides 21 Beer Hall 22, 32 Signal line 23, 24, 34, 54a~54c metal layer 36 Leads 40, 42, 44 Bonding wire 50, 51, 52, 53 Insulator layers 100, 100C, 200, 200C Semiconductor device

Claims

1. A base, a rectangular substrate provided on the base and including an insulator; A ground layer provided on the substrate; a signal line provided on a first surface of the substrate and spaced apart from the ground layer; a width of the signal line at a first end of the substrate is smaller than a width of the substrate and is larger than a width of the signal line at a second end of the substrate; a matching circuit in which a distance between the ground layer and the signal line at the first end is greater than a distance between the ground layer and the signal line at the second end; a semiconductor element provided on the base and electrically connected to the signal line on the first end side of the matching circuit by a plurality of first bonding wires; a frame provided on the base and surrounding the semiconductor element and the matching circuit; a feedthrough provided on the frame and having a lead; a plurality of second bonding wires electrically connecting the lead of the feedthrough and a signal line on the second end side of the matching circuit; Equipped with the first bonding wires are arranged parallel to one another; The semiconductor device, wherein the plurality of second bonding wires are arranged in parallel to each other.

2. 2. The semiconductor device according to claim 1, wherein the ground layer is provided on a second surface of the substrate opposite to the first surface.

3. The semiconductor device according to claim 2 , wherein the second surface of the substrate is inclined from the first end side of the substrate toward the second end side of the substrate so as to approach the first surface.

4. The semiconductor device according to claim 2 , wherein the second surface of the substrate has a step that approaches the first surface from the first end side of the substrate toward the second end side of the substrate.

5. The substrate includes a plurality of stacked insulating layers; the ground layer includes a first metal layer provided on a second surface of the substrate opposite to the first surface, and a second metal layer provided between the plurality of insulator layers; 2 . The semiconductor device according to claim 1 , wherein an end portion of the second metal layer on the first end side of the substrate is located closer to the second end side of the substrate than an end portion of the first metal layer on the first end side of the substrate.

6. the ground layer includes a plurality of the second metal layers stacked together, 6. The semiconductor device according to claim 5, wherein an end portion of one of the plurality of second metal layers that is closer to the signal line in the stacking direction of the plurality of insulator layers is located closer to the second end of the substrate than an end portion of one of the plurality of second metal layers that is farther from the signal line in the stacking direction is located closer to the second end of the substrate than an end portion of the one of the plurality of second metal layers that is farther from the signal line in the stacking direction is located closer to the second end of the substrate.

7. A semiconductor device described in any one of claims 1 to 6, wherein the spacing between the multiple first bonding wires is narrower than the spacing between the multiple second bonding wires.

8. The lengths of the plurality of first bonding wires are the same as each other, 8. The semiconductor device according to claim 1, wherein the second bonding wires have the same length.

9. Provided on a base, A semiconductor element; a feedthrough provided on the frame, the feedthrough having a signal line and a ground layer, and a lead connected to the signal line; the semiconductor element is electrically connected to the leads by a plurality of first bonding wires; a width of the signal line on the semiconductor element side is larger than a width of the signal line on the opposite side to the semiconductor element, a distance between the ground layer and the signal line on the semiconductor element side is greater than a distance between the ground layer and the signal line on the opposite side to the semiconductor element; A semiconductor device, wherein the lengths of the multiple first bonding wires are the same as each other.

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