Sensor and Capacitor Device

Abstract

To provide a sensor and a capacitor device which can improve characteristics.SOLUTION: A sensor according to an embodiment includes a sensor element. The sensor element includes a first base body, a first fixed electrode fixed to the first base body and a first structure. The first structure includes: a first fixed part which is fixed to the first base body; a first deformation part which is supported by the first fixed part; a first intermediate part which is supported by the first deformation part; and a first movable part which is supported by the first intermediate part and includes a first movable electrode. The first deformation part includes a first deformation opposed surface that is opposed to the first base body and a first deformation surface. The first intermediate part includes a first intermediate opposed surface opposed to the first base body and a first intermediate surface. The first deformation surface can be deformed according to gas contained in a space around the first structure. The first deformation surface is deformed to one of the concave shape and convex shape and the first intermediate surface is deformed to the other of the concave shape and convex shape according to increase in the temperature.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE The present invention relates to a sensor and a capacitor device. [Background technology]

[0002] For example, improved characteristics are desired in sensors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-56607 A Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE DISCLOSURE Embodiments of the present invention provide sensor and capacitor devices that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a sensor includes a sensor element. The sensor element includes a first base, a first fixed electrode fixed to the first base, and a first structure. The first structure includes a first fixed portion fixed to the first base, a first deformation portion supported by the first fixed portion, a first intermediate portion supported by the first deformation portion, and a first movable portion supported by the first intermediate portion. The first movable portion includes a first movable electrode facing the first fixed electrode. A first gap is provided between the first base and the first deformation portion and between the first base and the first intermediate portion. A third gap is provided between the first fixed electrode and the first movable electrode. The first deformation portion includes a first deformation facing surface facing the first base and a first deformation surface. The first deformation facing surface is between the first base and the first deformation surface in a first direction from the first base to the first movable portion. The first intermediate portion includes a first intermediate opposing surface facing the first base and a first intermediate surface. The first intermediate opposing surface is between the first base and the first intermediate surface in the first direction. The first deformable surface is deformable in response to gas contained in a space around the first structure. With an increase in temperature, the first deformable surface deforms into one of a concave shape and a convex shape, and the first intermediate surface deforms into the other of the concave shape and the convex shape. [Brief description of the drawings]

[0006] [Figure 1] 1(a) and 1(b) are schematic views illustrating the sensor according to the first embodiment. [Diagram 2] 2A and 2B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Diagram 3] 3(a) to 3(c) are schematic cross-sectional views illustrating the operation of the sensor according to the first embodiment. [Figure 4] 4(a) to 4(c) are schematic cross-sectional views illustrating the operation of a sensor according to a reference example. [Diagram 5] 5(a) and 5(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 6]FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 7] 7(a) to 7(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 9] FIG. 9 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 10] FIG. 10 is a graph illustrating the operation of the sensor according to the second embodiment. [Figure 11] 11A to 11C are schematic views illustrating the operation of the sensor according to the second embodiment. [Figure 12] 12A to 12C are schematic views illustrating the operation of the sensor according to the second embodiment. [Figure 13] 13A to 13C are schematic views illustrating the operation of the sensor according to the second embodiment. [Figure 14] 14A to 14C are schematic views illustrating the operation of the sensor according to the second embodiment. [Figure 15] 15A to 15C are schematic views illustrating the operation of the sensor according to the second embodiment. [Figure 16] FIG. 16 is a schematic view illustrating the sensor according to the second embodiment. [Figure 17] 17(a) and 17(b) are schematic views illustrating the sensor according to the second embodiment. [Figure 18] 18(a) and 18(b) are schematic views illustrating the capacitor device according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1(a) and 1(b) are schematic diagrams illustrating a sensor according to a first embodiment. FIG. 1(a) is a plan view. FIG. 1(b) is a cross-sectional view taken along line A1-A2 in FIG. 1(a). As shown in FIGS. 1(a) and 1(b), a sensor 110 according to the embodiment includes a sensor element 10E. The sensor element 10E includes a first base 41, a first fixed electrode 51E, and a first structure 10S. The first fixed electrode 51E is fixed to the first base 41.

[0009] 1(b), in this example, the first base 41 includes a substrate 41a and an insulating layer 41i. The substrate 41a may include, for example, a semiconductor substrate (e.g., a silicon substrate). The insulating layer 41i is provided between the substrate 41a and the first fixed electrode 51E. In this example, the insulating layer 51i is provided on the first fixed electrode 51E.

[0010] The first structure 10S includes a first fixed portion 11X, a first deforming portion 11F, a first intermediate portion 11M, and a first movable portion 21. The first fixed portion 11X is fixed to the first base 41. The first deforming portion 11F is supported by the first fixed portion 11X. The first intermediate portion 11M is supported by the first deforming portion 11F. The first movable portion 21 is supported by the first intermediate portion 11M. The first movable portion 21 includes a first movable electrode 21E. The first movable electrode 21E faces a first fixed electrode 51E.

[0011] A first gap g1 is provided between the first base 41 and the first deforming portion 11F, and between the first base 41 and the first intermediate portion 11M. A gap (third gap g3) is provided between the first fixed electrode 51E and the first movable electrode 21E.

[0012] In this example, the first structure 10S includes a first connecting portion 11C, a first movable connecting portion 11B, and a first fixed connecting portion 11A. The first connecting portion 11C connects the first deforming portion 11F and the first intermediate portion 11M. The first movable connecting portion 11B connects the first intermediate portion 11M and the first movable portion 21. The first fixed connecting portion 11A connects the first fixed portion 11X and the first deforming portion 11F.

[0013] The first movable portion 21 may include an insulating member 11L. The insulating member 11L is provided, for example, around the first movable electrode 21E.

[0014] For example, a first fixed electrode 51E is provided on the first base 41. A first movable part 21 is provided above the first fixed electrode 51E.

[0015] As shown in FIG. 1(b), the first deformation portion 11F includes a first deformation facing surface Fa1 and a first deformation surface F1. The first deformation facing surface Fa1 faces the first base 41. The first deformation facing surface Fa1 is between the first base 41 and the first deformation surface F1 in the first direction D1. The first direction D1 is the direction from the first base 41 to the first movable portion 21. The first deformation facing surface F1 is the surface opposite to the first deformation facing surface Fa1. The first deformation facing surface Fa1 is, for example, a lower surface. The first deformation surface F1 is, for example, an upper surface.

[0016] The first intermediate portion 11M includes a first intermediate opposing surface Ma1 and a first intermediate surface M1. The first intermediate opposing surface Ma1 faces the first base 41. The first intermediate opposing surface Ma1 is between the first base 41 and the first intermediate surface M1 in the first direction D1. The first intermediate opposing surface Ma1 is, for example, a lower surface. The first intermediate surface M1 is, for example, an upper surface.

[0017] The first direction D1 is the Z-axis direction. A direction perpendicular to the Z-axis direction is the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. The first direction D1 is, for example, the height direction.

[0018] The first deformation surface F1 is deformable according to the gas contained in the space around the first structure 10S. For example, the gas contains a substance to be detected (e.g., hydrogen, etc.). For example, the shape of the first deformation portion 11F changes according to the concentration of the substance to be detected.

[0019] For example, the first deforming portion 11F includes a first detection layer 11S. The first detection layer 11S adsorbs (or absorbs) the detection target substance. In association with the adsorption (or absorption), for example, the first detection layer 11S deforms (e.g., expands). Accordingly, the first deforming portion 11F deforms, and the first deforming surface F1 curves. On the other hand, the first middle portion 11M does not deform even if the concentration of the detection target changes.

[0020] Meanwhile, the first deformation portion 11F and the first intermediate portion 11M deform in response to a change in temperature (e.g., the temperature of the first structure 10S). The directions of these deformations are different between the first deformation portion 11F and the first intermediate portion 11M. For example, as the temperature increases, the first deformation surface F1 and the first intermediate surface M1 deform in opposite directions. For example, as the temperature increases, the first deformation surface F1 deforms into one of a concave shape and a convex shape. The first intermediate surface M1 deforms into the other of a concave shape and a convex shape.

[0021] FIG. 1(b) illustrates a high temperature state. In this example, in a high temperature state, the first deformation surface F1 deforms concavely and the first intermediate surface M1 deforms convexly. As described later, in a high temperature state, the first deformation surface F1 may deform convexly and the first intermediate surface M1 may deform concavely. This provides more stable characteristics.

[0022] 2A and 2B are schematic cross-sectional views illustrating the sensor according to the first embodiment. Fig. 2(a) illustrates a low temperature state. The temperature in the low temperature state illustrated in Fig. 2(a) is lower than the temperature in the high temperature state illustrated in Fig. 1(b). The temperature in the low temperature state is, for example, about 25°C (20°C or higher and 30°C or lower). The temperature in the high temperature state is, for example, 50°C or higher. The temperature in the high temperature state may be, for example, 70°C or lower.

[0023] 2(a), in a low temperature state, the first deformation surface F1 of the first deformation portion 11F is substantially flat, and in a low temperature state, the first middle surface M1 of the first middle portion 11M is substantially flat.

[0024] 1(b), the first deformation surface F1 of the first deformation portion 11F and the first intermediate surface M1 of the first intermediate portion 11M are curved. The directions of curvature are opposite to each other between the first deformation surface F1 and the first intermediate surface M1.

[0025] Such a structure can be obtained, for example, by making the structure of the first deformation portion 11F asymmetric in the vertical direction and the structure of the first intermediate portion 11M asymmetric in the vertical direction. For example, the asymmetric structure is deformed by thermal expansion accompanying a temperature rise. This results in curvature in the opposite direction. Examples of asymmetric structures will be described later.

[0026] Below, examples of modifications will be described. 3(a) to 3(c) are schematic cross-sectional views illustrating the operation of the sensor according to the first embodiment. 3(a) is a low temperature state, and in the first state ST1, the gas does not contain the substance to be detected. In the first state ST1, the first deformation surface F1 and the first intermediate surface M1 are substantially flat. At this time, the distance between the first fixed electrode 51E and the first movable electrode 21E is the distance z1.

[0027] The second state ST2 shown in FIG. 3(b) is a low temperature state, and in the second state ST2, the gas contains a substance to be detected. In this case, the first deformable portion 11F deforms according to the substance to be detected. When the concentration of the substance to be detected is high, the first deformable surface F1 deforms convexly. The end of the first deformable surface F1 on the side of the first intermediate portion 11M is displaced in the direction of the arrow AR1 (for example, downward). As a result, the position of the first movable portion 21 in the height direction in the second state ST2 changes from the position of the first movable portion 21 in the height direction in the first state ST1. In the second state ST2, the distance between the first fixed electrode 51E and the first movable electrode 21E is a distance z2. The distance z2 is shorter than the distance z1. This difference in distance is detected as a change in the electrostatic capacitance between the first fixed electrode 51E and the first movable electrode 21E.

[0028] The third state ST3 shown in FIG. 3(c) is a high temperature state, and in the third state ST3, the gas does not contain the substance to be detected. In the third state ST3, the first deformation surface F1 is deformed convexly due to deformation caused by thermal expansion. The end of the first deformation surface F1 on the side of the first intermediate portion 11M is displaced in the direction of the arrow AR1 (for example, downward). On the other hand, the first intermediate surface M1 is deformed concavely due to deformation caused by thermal expansion. The end of the first intermediate surface M1 on the side of the first movable portion 21 is displaced in the direction of the arrow AR2 (for example, upward). As a result, the position of the first movable portion 21 in the height direction in the third state ST3 does not substantially change from the position of the first movable portion 21 in the height direction in the first state ST1. For example, the distance between the first fixed electrode 51E and the first movable electrode 21E in the third state ST3 is a distance z1.

[0029] In this manner, in the sensor 110 according to the embodiment, the change in the distance between the first fixed electrode 51E and the first movable electrode 21E caused by the change in temperature can be suppressed. In the embodiment, the effect of temperature can be suppressed, and the detection target substance contained in the gas can be detected with high accuracy.

[0030] 4(a) to 4(c) are schematic cross-sectional views illustrating the operation of a sensor according to a reference example. These figures illustrate the operation of the reference sensor 119. In the sensor 119, the above-mentioned first intermediate portion 11M that deforms in the opposite direction to the first deforming portion 11F is not provided.

[0031] 4(a), the first deformation plane F1 and the first intermediate plane M1 are substantially flat. At this time, the distance between the first fixed electrode 51E and the first movable electrode 21E is a distance z1.

[0032] In the second state ST2 shown in FIG. 4(b), the first deforming portion 11F deforms into a convex shape according to the substance to be detected. In the second state ST2, the distance between the first fixed electrode 51E and the first movable electrode 21E is a distance z2. The distance z2 is shorter than the distance z1. This difference in distance is detected as a change in the electrostatic capacitance between the first fixed electrode 51E and the first movable electrode 21E.

[0033] 4(c), for example, the first deformation surface F1 is deformed to be convex due to deformation caused by thermal expansion. As a result, the position in the height direction of the first movable part 21 in the third state ST3 changes from the position in the height direction of the first movable part 21 in the first state ST1. For example, the distance between the first fixed electrode 51E and the first movable electrode 21E in the third state ST3 becomes a distance z2.

[0034] In this way, the sensor 119 of the reference example does not have the first intermediate portion 11M that deforms in the opposite direction to the first deforming portion 11F. In such a sensor 119, the distance between the first fixed electrode 51E and the first movable electrode 21E is affected by the temperature in addition to the concentration of the substance to be detected. Therefore, there is a limit to improving the accuracy in detecting the substance to be detected.

[0035] In contrast, in the embodiment, the influence of temperature can be suppressed. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0036] As shown in FIG. 2(a) and FIG. 2(b), the first deformation portion 11F includes a first resistance layer 11R and a first detection layer 11S. The first detection layer 11S is deformable in response to a gas. The first detection layer 11S deforms, for example, depending on the concentration of a substance to be detected contained in the gas. At least a portion of the first detection layer 11S may overlap the first resistance layer 11R in the first direction D1. As shown in FIG. 2(b), an insulating member 11L may be provided around the first resistance layer 11R. For example, the first detection layer 11S may be provided on the surface of the insulating member 11L. The first resistance layer 11R is, for example, a heater.

[0037] The insulating member 11L may contain, for example, at least one selected from the group consisting of oxygen and nitrogen, and silicon.

[0038] As shown in FIG. 2(b), the first intermediate portion 11M may include a first intermediate conductive layer 11ML. An insulating member 11L may be provided around the first intermediate conductive layer 11ML. The distance along the first direction D1 between the first intermediate conductive layer 11ML and the first intermediate opposing surface Ma1 is defined as a first distance d1. The distance along the first direction D1 between the first intermediate conductive layer 11ML and the first intermediate surface M1 is defined as a second distance d2. In the example shown in FIG. 2(b), the first distance d1 is shorter than the second distance d2.

[0039] On the other hand, the distance between the first resistance layer 11R and the first deformation facing surface Fa1 along the first direction D1 is defined as a third distance d3. The distance between the first resistance layer 11R and the first deformation facing surface F1 along the first direction D1 is defined as a fourth distance d4. In the example shown in FIG. 2(b), the third distance d3 is longer than the fourth distance d4.

[0040] In this way, the layer stacking structure is reversed between the first intermediate portion 11M and the first deformation portion 11F, thereby obtaining deformation in the opposite direction with respect to a change in temperature.

[0041] As described below, in an embodiment, the first distance d1 may be greater than the second distance d2, and the third distance d3 may be less than the fourth distance d4.

[0042] As shown in FIG. 1(a), a first connection direction (in this example, the second direction D2, the X-axis direction) from the first deformation portion 11F to the first intermediate portion 11M intersects with the first direction D1. A width 11CW of at least a part of the first connection portion 11C along the first connection intersecting direction is narrower than a width 11MW of the first intermediate portion 11M along the first connection intersecting direction. The first connection intersecting direction intersects with a plane including the first direction D1 and the first connection direction. In this example, the first connection intersecting direction is a third direction D3, for example, the Y-axis direction.

[0043] As shown in FIG. 1(a), a first movable connection direction (in this example, the second direction D2, the X-axis direction) from the first intermediate portion 11M to the first movable portion 21 intersects with the first direction D1. A width 11BW along the first movable connection intersecting direction of at least a part of the first movable connection portion 11B is narrower than a width 11MW along the first movable connection intersecting direction of the first intermediate portion 11M. The first movable connection intersecting direction intersects with a plane including the first direction D1 and the first movable connection direction. In this example, the first movable connection intersecting direction is a third direction D3, for example, the Y-axis direction.

[0044] As shown in FIG. 1(a), a first fixed connection direction (in this example, the second direction D2, the X-axis direction) from the first fixed portion 11X to the first deforming portion 11F intersects with the first direction D1. A width 11AW of at least a part of the first fixed connection portion 11A along the first fixed connection intersecting direction is narrower than a width 11FW of the first deforming portion 11F along the first fixed connection intersecting direction. The first fixed connection intersecting direction intersects with a plane including the first direction D1 and the first fixed connection direction. In this example, the first fixed connection intersecting direction is a third direction D3, for example, the Y-axis direction.

[0045] 1(a) and 1(b), the first structure 10S may include a second fixed portion 12X fixed to a first base 41, a second deforming portion 12F supported by the second fixed portion 12X, and a second intermediate portion 12M supported by the second deforming portion 12F. The first movable portion 21 is supported by the first intermediate portion 11M and the second intermediate portion 12M. A second gap g2 is provided between the first base 41 and the second deforming portion 12F, and between the first base 41 and the second intermediate portion 12M.

[0046] The second deformation portion 12F includes a second deformation facing surface Fa2 facing the first base 41 and a second deformation surface F2. The second deformation facing surface Fa2 is between the first base 41 and the second deformation surface F2 in the first direction D1. The second intermediate portion 12M includes a second middle facing surface Ma2 facing the first base 41 and a second middle surface M2. The second middle facing surface Ma2 is between the first base 41 and the second middle surface M2 in the first direction D1.

[0047] The second deformation surface F2 is deformable in response to the gas contained in the space. For example, as the temperature increases, the second deformation surface F2 deforms into one of a concave shape and a convex shape, and the second intermediate surface M2 deforms into the other of the concave shape and the convex shape.

[0048] The first movable portion 21 is located between the first intermediate portion 11M and the second intermediate portion 12M. By providing the second fixed portion 12X, the second deformable portion 12F, and the second intermediate portion 12M to the first structure 10S, the distance between the first fixed electrode 51E and the first movable electrode 21E becomes more stable.

[0049] In this example, the first structure 10S includes a second connecting portion 12C, a second movable connecting portion 12B, and a second fixed connecting portion 12A. The second connecting portion 12C connects the second deformable portion 12F and the second middle portion 12M. The second movable connecting portion 12B connects the second middle portion 12M and the second 1 The second fixed connection portion 12A connects the second fixed portion 12X and the second deformable portion 12F.

[0050] As shown in FIG. 1(a), a first connection direction (in this example, along the second direction D2, along the X-axis direction) from the second deformation portion 12F to the second intermediate portion 12M intersects with the first direction D1. A width 12CW along the second connection intersecting direction of at least a part of the second connection portion 12C is narrower than a width 12MW along the second connection intersecting direction of the second intermediate portion 12M. The second connection intersecting direction intersects with a plane including the first direction D1 and the second connection direction. In this example, the second connection intersecting direction is a third direction D3, for example, the Y-axis direction.

[0051] As shown in FIG. 1(a), a first movable connection direction from the second intermediate portion 12M to the first movable portion 21 (in this example, along the second direction D2, along the X-axis direction) intersects with the first direction D1. The width 12BW of at least a part of the second movable connection portion 12B along the second movable connection intersecting direction is 2 The width along the movable connection cross direction is narrower than 12MW. The second movable connection cross direction intersects with a plane including the first direction D1 and the second movable connection direction. In this example, the second movable connection cross direction is along the third direction D3, for example, along the Y-axis direction.

[0052] As shown in FIG. 1A, the second fixed connection direction from the second fixed portion 12X to the second deforming portion 12F (in this example, along the second direction D2, along the X-axis direction) intersects with the first direction D1. 2 The width 12AW along the fixed connection cross direction is narrower than the width 12FW along the second fixed connection cross direction of the second deformable portion 12F. The first fixed connection cross direction intersects with a plane including the first direction D1 and the second fixed connection direction. In this example, the second fixed connection cross direction is the third direction D3, for example, the Y-axis direction.

[0053] In this example, the second deformation portion 12F is located between the second fixed portion 12X and the first movable portion 21. The second intermediate portion 12M is located between the second deformation portion 12F and the first movable portion 21.

[0054] As shown in FIG. 2(a), for example, the second deformation portion 12F includes a second resistance layer 12R and a second detection layer 12S. The second detection layer 12S is deformable in response to a gas. The second detection layer 12S deforms, for example, in response to the concentration of a substance to be detected contained in the gas. At least a portion of the second detection layer 12S may overlap the second resistance layer 12R in the first direction D1. As shown in FIG. 2(a), an insulating member 11L may be provided around the second resistance layer 12R. For example, the second detection layer 12S may be provided on the surface of the insulating member 11L.

[0055] In the sensor 110, a conductive layer electrically connected to the first movable electrode 21E may pass through the first fixed portion 11X and the second fixed portion 12X. For example, a conductive layer electrically connected to the first resistive layer 11R may pass through the first fixed portion 11X and the second fixed portion 12X. For example, a conductive layer electrically connected to the second resistive layer 12R may pass through the first fixed portion 11X and the second fixed portion 12X.

[0056] 1(a), in this example, the first deformation portion 11F is supported by tension from an anchor spring 31. The second deformation portion 12F is supported by tension from an anchor spring 32. This makes it possible to obtain a stable support state while suppressing heat conduction.

[0057] 5(a) and 5(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 5(a), in the sensor 111 according to the embodiment, as the temperature rises, the first deformation surface F1 deforms into a concave shape, and the first intermediate surface M1 changes into a concave shape. In the sensor 111, the effect of temperature can also be suppressed.

[0058] 5(b), the first distance d1 is longer than the second distance d2, and the third distance d3 is shorter than the fourth distance d4. This configuration causes deformation in the sensor 111. The configuration of the sensor 111 other than the above may be similar to the configuration of the sensor 110.

[0059] FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 6, in the sensor 112 according to the embodiment, No. 1 The movable part 21 includes a conductive layer 21A in addition to the first movable electrode 21E. The conductive layer 21A is laminated with the first movable electrode 21E. The conductive layer 21A is, for example, in the same layer as the first resistance layer 11R. The configuration of the sensor 112 other than the above may be the same as the configuration of the sensor 110.

[0060] 7(a) to 7(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 7A, in a sensor 113 according to the embodiment, the first movable electrode 21E is substantially in the same layer as the first resistance layer 11R. Except for this, the configuration of the sensor 113 may be similar to that of the sensor 110.

[0061] 7(b), in the sensor 113, the first distance d1 is shorter than the second distance d2. The third distance d3 is shorter than the fourth distance d4. In this example, the first detection layer 11S is provided on the first deformation surface F1.

[0062] 7(c), in the sensor 114 according to the embodiment, the first distance d1 is longer than the second distance d2. The third distance d3 is longer than the fourth distance d4. The first movable electrode 21E is substantially in the same layer as the first resistance layer 11R. Except for this, the configuration of the sensor 114 may be similar to that of the sensor 110. In the sensor 114, the first detection layer 11S may be provided on, for example, the first deformation surface F1.

[0063] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in Fig. 8, in the sensor 115 according to the embodiment, the first intermediate conductive layer 11ML of the first intermediate portion 11M is provided on the first intermediate opposing surface Ma1. The first detection layer 11S is provided on the first deformation surface F1. The configuration of the sensor 115 other than this may be similar to the configuration of the sensor 110. Curvature in the opposite direction is effectively obtained. The first intermediate conductive layer 11ML may be, for example, a metal layer.

[0064] FIG. 9 is a schematic plan view illustrating the sensor according to the first embodiment. As shown in FIG. 9, in the sensor 116 according to the embodiment, the direction from the first fixed portion 11X to the first deformable portion 11F is along the second direction (X-axis direction). The direction from the first deformable portion 11F to the first intermediate portion 11M is along the third direction D3 (Y-axis direction). In this way, the direction from the first fixed portion 11X to the first deformable portion 11F intersects with the direction from the first deformable portion 11F to the first intermediate portion 11M. The direction from the first intermediate portion 11M to the first movable portion 21 is the second direction D2 (X-axis direction). In this way, the direction from the first intermediate portion 11M to the first movable portion 21 intersects with the direction from the first deformable portion 11F to the first intermediate portion 11M. In this way, the arrangements of the first fixed portion 11X, the first deformable portion 11F, the first intermediate portion 11M, and the first movable portion 21 can be modified in various ways. The configuration of the sensor 116 other than the above may be similar to that of the sensor 110, for example.

[0065] The influence of temperature can also be suppressed in the sensors 111 to 116. According to the embodiment, it is possible to provide a sensor with improved characteristics.

[0066] Second embodiment In the second embodiment, the sensor can perform a test mode operation in addition to the detection mode operation. The test mode operation is, for example, a self-diagnosis mode operation. This operation may be performed by, for example, the control unit 70. In the following, an example of the sensor 110 will be described. The following description can also be applied to other sensors (such as the sensors 111 to 116).

[0067] 1(b), the sensor 110 may include a control unit 70. The control unit 70 is electrically connected to the first fixed electrode 51E and the first movable electrode 21E. The electrical connection is established by, for example, wirings 75a and 75b.

[0068] The control unit 70 is capable of performing a first mode operation. In the first mode operation, the control unit 70 is capable of outputting a first signal sig1 according to a first capacitance between the first fixed electrode 51E and the first movable electrode 21E. The first capacitance changes according to the gas contained in the space around the first structure 10S. The first capacitance changes according to, for example, the concentration of a substance to be detected that is contained in the gas. The first mode operation is a detection mode operation.

[0069] The control unit 70 may be capable of performing a second mode operation. In the second mode operation, the control unit 70 detects the first capacitance while supplying the first current i1 to the first resistance layer 11R (first detection). In the second mode operation, the control unit 70 detects the first capacitance without supplying the first current i1 to the first resistance layer 11R (second detection). In the second detection, a current smaller than the first current i1 may be supplied. The control unit 70 can output a second signal sig2 based on the difference between a first result of detecting the first capacitance in the first detection and a second result of detecting the first capacitance in the second detection. The second signal sig2 includes a signal (information) regarding the presence or absence of an abnormality in the sensor element 10E.

[0070] In an embodiment, the control unit 70 may be capable of outputting a second signal sig2 regarding the presence or absence of an abnormality in the sensor element 10E based on the result of detecting the first capacitance while supplying a first current i1 to the first resistance layer 11R in the second mode operation.

[0071] In the second mode operation, the first current i1 may be supplied via, for example, the wiring 75c. In the second mode operation, the control unit 70 may supply a second current i2 to the second resistance layer 12R (heater). The second current i2 may be supplied via, for example, the wiring 75d (see FIG. 1(b)). FIG. 10 is a graph illustrating the operation of the sensor according to the second embodiment. 10, the horizontal axis represents the current value Ia1 of the first current i1 and the second current i2. The horizontal axis may represent the voltage value Va1 corresponding to the current value Ia1. The vertical axis represents the first capacitance C1.

[0072] For example, when the first current i1 (and the second current i2) is supplied, the temperature of the first deformation portion 11F (and the second deformation portion 12F) rises due to Joule heat, and the first deformation portion 11F (and the second deformation portion 12F) deforms. At this time, the temperature of the first intermediate portion 11M (and the second intermediate portion 12M) is maintained lower than the temperature of the first deformation portion 11F (and the second deformation portion 12F). Due to the deformation of the deformation portion, the distance between the first fixed electrode 51E and the first movable electrode 21E changes, and the first capacitance C1 changes.

[0073] In this example, as the current value Ia1 increases, the first capacitance C1 increases. As the voltage value Va1 increases, the first capacitance C1 increases. Information (design data) regarding the relationship between the current value Ia1 (or the voltage value Va1) and the first capacitance C1 may be acquired in advance. By comparing this design data with the measurement results, it is possible to detect an abnormality.

[0074] 11A to 11C are schematic views illustrating the operation of the sensor according to the second embodiment. The horizontal axis of Fig. 11 is time tm0. The vertical axis in the lower diagram of Fig. 11 is the applied voltage VR to the resistance layer supplied from the control unit 70. The applied voltage VR may be the magnitude of the supplied current.

[0075] In the first mode operation MO1, the control unit 70 performs a measurement MC1 of the first capacitance C1. The measurement MC1 may be performed repeatedly. In each of the multiple measurements MC1, the control unit 70 may supply a voltage Vm1 (current Im1) to the resistance layer. Alternatively, the control unit 70 may supply a voltage Vm1 (current Im1) to the resistance layer before or after each of the multiple measurements MC1. This increases the temperature of the detection layer (first detection layer 11S and second detection layer 12S), allowing the substance adsorbed to the detection layer to be released. In the multiple measurements MC1, the characteristics of the detection layer are initialized.

[0076] In the second mode operation MO2, a first voltage Vt1 (or a first current It1) is supplied to the resistive layers (the first resistive layer 11R and the second resistive layer 12R) by the control unit 70. In this state, a measurement MC1 of the first capacitance C1 is performed. This measurement MC1 corresponds to a first detection.

[0077] In this example, in the second mode operation MO2, the control unit 70 supplies a second voltage Vt2 (or a second current It2) to the resistive layers (the first resistive layer 11R and the second resistive layer 12R). In this state, a measurement MC1 of the first capacitance C1 is performed. This measurement MC1 corresponds to the second detection. In the second detection, the second voltage Vt2 (or the second current It2) may be substantially 0. The control unit 70 outputs a second signal sig2 based on the difference between the result of the first detection and the result of the first detection.

[0078] The control unit 70 may repeatedly perform the set MZ1 of the first mode operation MO1 and the second mode operation MO2.

[0079] 12A to 12C are schematic views illustrating the operation of the sensor according to the second embodiment. The horizontal axis of FIG. 12 is time tm0. The vertical axis of FIG. 12 is the difference ΔCm between the detection value by the first detection and the detection value by the second detection. As shown in FIG. 12, the detection results of each of the multiple groups MZ1 are plotted. For example, a reference value RG0 is set for the difference ΔCm. If the measured value of the difference ΔCm is within the reference value RG0, it is determined that there is no abnormality. If the measured value of the difference ΔCm is outside the reference value RG0, it is determined that there is an abnormality. In this case, the second signal sig2 indicating that there is an abnormality is output from the control unit 70 in the sensor element 10E.

[0080] 13A to 13C are schematic views illustrating the operation of the sensor according to the second embodiment. 13, in the first mode operation MO1, the control unit 70 performs a measurement MC1 of the first capacitance C1. The measurement MC1 may be performed repeatedly. In each of the multiple measurements MC1, the control unit 70 may supply a voltage Vm1 (current Im1) to the resistive layer. Alternatively, the control unit 70 may supply a voltage Vm1 (current Im1) to the resistive layer before or after each of the multiple measurements MC1.

[0081] In the second mode operation MO2, the control unit 70 supplies a first voltage Vt1 (or a first current It1) to the resistive layers (the first resistive layer 11R and the second resistive layer 12R). In this state, a measurement MC1 of the first capacitance C1 is performed. In this example, the control unit 70 outputs a second signal sig2 related to the presence or absence of an abnormality in the sensor element 10E based on the detection result. The control unit 70 may repeatedly perform a set MZ1 of the first mode operation MO1 and the second mode operation MO2.

[0082] 14A to 14C are schematic views illustrating the operation of the sensor according to the second embodiment. The horizontal axis of FIG. 14 is time tm0. The vertical axis of FIG. 14 is the measurement value Cm by the measurement MC1 of the first capacitance C1. As shown in FIG. 14, the detection results of each of the multiple groups MZ1 are plotted. For example, a reference value RG0 is set for the measurement value Cm. If the measurement value Cm is within the reference value RG0, it is determined that there is no abnormality. If the measurement value Cm deviates from the reference value RG0, it is determined that there is an abnormality. In this case, a second signal sig2 indicating that there is an abnormality is output from the control unit 70 in the sensor element 10E.

[0083] 15A to 15C are schematic views illustrating the operation of the sensor according to the second embodiment. FIG. 15 shows an example of processing that can be performed by the control unit 70. For example, the resistance Rh of the resistive layer (the first resistive layer 11R and the second resistive layer 12R) is compared with a reference value Rth1 (step S11). If the resistance Rh is lower than the reference value Rth1, it is determined that an error ER1 has occurred (step S21). The error ER1 corresponds to a "short circuit."

[0084] If the resistance Rh is not lower than the reference value Rth1, the process proceeds to step S12. In step S12, the resistance Rh is compared with the reference value Rth2. If the resistance Rh is higher than the reference value Rth2, an error ER2 is determined (step S22). The error ER2 corresponds to a "disconnection".

[0085] If the resistance Rh is not higher than the reference value Rth2, proceed to step S13. In step S13, the ratio dC / dTh is compared with the reference value V01. The ratio dC / dTh is the ratio of the change (dC) of the first capacitance C1 to the change (dTh) of the temperature. This change (dTh) of the temperature is the change of the temperature caused by the application of a voltage (or the supply of a current) to the heater (the first resistive layer 11R and the second resistive layer 12R). The change of the temperature in this case is not the change of the temperature of the environment. If the ratio dC / dTh is lower than the reference value V01, it is determined that an error ER3 has occurred (step S23). The error ER3 corresponds to a "decrease in the ratio". The "decrease in the ratio" is an example of an abnormality. Instead of comparing the ratio dC / dTh with the reference value V01, for example, the difference ΔCm may be compared with the reference value. Instead of comparing the ratio dC / dTh with the reference value V01, for example, the measured value Cm may be compared with the reference value.

[0086] If the ratio dC / dTh is not lower than the reference value V01, the process proceeds to step S14. In step S14, the ratio dC / dTh is compared with the reference value V02. If the ratio dC / dTh is higher than the reference value V02, it is determined as an error ER4 (step S24). The error ER4 corresponds to an "increase in the ratio." An "increase in the ratio" is one example of an abnormality.

[0087] If the ratio dC / dTh is not higher than the reference value V02, the process ends. In this case, it is determined that there is no abnormality.

[0088] FIG. 16 is a schematic view illustrating the sensor according to the second embodiment. As shown in FIG. 16, the sensor 117 according to the embodiment includes a plurality of sensor elements 10E. For example, the above-mentioned first mode operation MO1 and second mode operation MO2 are performed using one of the plurality of sensor elements 10E. For example, in the second mode operation MO2, when the second signal sig2 indicates that there is an abnormality in one of the plurality of sensor elements 10E, the control unit 70 can perform the first mode operation MO1 in another of the plurality of sensor elements 10E. The first mode operation MO1 and the second mode operation MO2 may be repeatedly performed in relation to this other one of the plurality of sensor elements 10E.

[0089] By providing a plurality of sensor elements 10E, if an abnormality occurs in one sensor element 10E, detection can be continued by another sensor element 10E.

[0090] 17(a) and 17(b) are schematic views illustrating the sensor according to the second embodiment. As shown in FIG. 17(a), in the sensor 120, a control unit 70 is provided on the first base 41 of the sensor element 10E. The control unit 70, for example, No. 1 It may include a circuit (for example, a complementary metal oxide semiconductor (CMOS)) formed in a part of the substrate 41 .

[0091] 17(b), in a sensor 121, a control unit 70 may be provided separately from the first base body 41 of the sensor element 10E. The control unit 70 may include, for example, a microcomputer.

[0092] Third embodiment The third embodiment relates to a capacitor device. 18(a) and 18(b) are schematic views illustrating the capacitor device according to the third embodiment. Fig. 18(a) is a plan view, and Fig. 18(b) is a cross-sectional view taken along line A1-A2 in Fig. 18(a). 18(a) and 18(b), a capacitor device 210 according to the embodiment includes a sensor element 10E. The sensor element 10E includes a first base 41, a first fixed electrode 51E, and a first structure 10S. The first fixed electrode 51E is fixed to the first base 41.

[0093] The first structure 10S includes a first fixed portion 11X fixed to the first base 41, a first deformable portion 11F supported by the first fixed portion 11X, a first intermediate portion 11M supported by the first deformable portion 11F, and a first movable portion 21 supported by the first intermediate portion 11M. The first deformable portion 11F includes a first resistance layer 11R. The first movable portion 21 includes a first movable electrode 21E facing a first fixed electrode 51E.

[0094] A first gap g1 is provided between the first base 41 and the first deformable portion 11F, and between the first base 41 and the first intermediate portion 11M. A third gap g3 is provided between the first fixed electrode 51E and the first movable electrode 21E.

[0095] The first deformation portion 11F includes a first deformation facing surface Fa1 facing the first base 41 and a first deformation surface F1. The first deformation facing surface Fa1 is located between the first base 41 and the first deformation surface F1 in the first direction D1 from the first base 41 to the first movable portion 21.

[0096] The first intermediate portion 11M includes a first intermediate facing surface Ma1 facing the first base 41, and a first intermediate surface M1. The first intermediate facing surface Ma1 is located between the first base 41 and the first intermediate surface M1 in the first direction D1.

[0097] As the temperature increases, the first deformation surface F1 deforms into one of a concave shape and a convex shape, and the first intermediate surface M1 deforms into the other of a concave shape and a convex shape.

[0098] The control unit 70 is capable of changing the first capacitance C1 between the first fixed electrode 51E and the first movable electrode 21E by supplying a current to the first resistance layer 11R.

[0099] For example, a terminal 76a and a terminal 76b may be provided. The terminal 76a is electrically connected to the first fixed electrode 51E by a wiring 75a. The terminal 76b is electrically connected to the first movable electrode 21E by a wiring 75b. A first capacitance C1 is generated between these terminals. The first deformable portion 11F is deformed by a current supplied to the first resistance layer 11R, and the distance between the first fixed electrode 51E and the first movable electrode 21E changes. This changes the first capacitance C1.

[0100] In the embodiment, the above-mentioned first intermediate portion 11M is provided. This makes it possible to suppress the influence of changes in the surrounding temperature. The first capacitance C1 can be controlled with high accuracy.

[0101] The sensor configuration described in relation to the first embodiment may be applied to the capacitor device according to the third embodiment.

[0102] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) A first substrate; a first fixed electrode fixed to the first base; A first structure; A sensor element including: The first structure is A first fixed portion fixed to the first base; A first deformation portion supported by the first fixed portion; A first intermediate portion supported by the first deformation portion; a first movable portion supported by the first intermediate portion, the first movable portion including a first movable electrode facing the first fixed electrode; Including, a first gap is provided between the first base and the first deformation portion and between the first base and the first intermediate portion; a third gap is provided between the first fixed electrode and the first movable electrode; the first deformation portion includes a first deformation opposing surface facing the first base and a first deformation surface, the first deformation opposing surface being between the first base and the first deformation surface in a first direction from the first base to the first movable portion, the first intermediate portion includes a first intermediate facing surface facing the first base and a first intermediate surface, the first intermediate facing surface being between the first base and the first intermediate surface in the first direction; the first deformation surface is deformable in response to a gas contained in a space around the first structure, A sensor, wherein as the temperature increases, the first deformation surface deforms into one of a concave shape and a convex shape, and the first intermediate surface deforms into the other of the concave shape and the convex shape.

[0103] (Configuration 2) the first structure includes a first connection portion that connects the first deformation portion and the first intermediate portion, a first connection direction from the first deformation portion to the first intermediate portion intersects with the first direction, a width of at least a portion of the first connection portion along a first connection cross direction is narrower than a width of the first intermediate portion along the first connection cross direction; The sensor of configuration 1, wherein the first connection cross direction intersects with a plane including the first direction and the first connection direction.

[0104] (Configuration 3) the first structure includes a first movable connecting portion that connects the first intermediate portion and the first movable portion, a first movable connection direction from the first intermediate portion to the first movable portion intersects with the first direction; A width of at least a portion of the first movable connection portion along a first movable connection cross direction is narrower than a width of the first intermediate portion along the first movable connection cross direction, The sensor of configuration 1 or 2, wherein the first movable connection cross direction intersects with a plane including the first direction and the first movable connection direction.

[0105] (Configuration 4) the first structure includes a first fixed connection portion that connects the first fixed portion and the first deformation portion, a first fixed connection direction from the first fixed portion to the first deformation portion intersects with the first direction, A width of at least a portion of the first fixed connection portion along the first fixed connection cross direction is narrower than a width of the first deformable portion along the first fixed connection cross direction, The sensor according to any one of configurations 1 to 3, wherein the first fixed connection intersecting direction intersects with a plane including the first direction and the first fixed connection direction.

[0106] (Configuration 5) The first deformation portion is located between the first fixed portion and the first movable portion, The sensor according to any one of configurations 1 to 4, wherein the first intermediate portion is between the first deformation portion and the first movable portion.

[0107] (Configuration 6) a direction from the first fixed portion to the first deformation portion intersects with a direction from the first deformation portion to the first intermediate portion, 5. The sensor according to any one of configurations 1 to 4, wherein a direction from the first intermediate portion to the first movable portion intersects with the direction from the first deformation portion to the first intermediate portion.

[0108] (Configuration 7) The first deformation portion is A first resistive layer; A first detection layer; Including, The sensor according to any one of configurations 1 to 6, wherein the first detection layer is deformable in response to the gas.

[0109] (Configuration 8) The sensor of configuration 7, wherein at least a portion of the first detection layer overlaps the first resistive layer in the first direction.

[0110] (Configuration 9) the first intermediate portion includes a first intermediate conductive layer; a first distance along the first direction between the first intermediate conductive layer and the first intermediate opposing surface is shorter than a second distance along the first direction between the first intermediate conductive layer and the first intermediate opposing surface, and a third distance along the first direction between the first resistance layer and the first deformation opposing surface is longer than a fourth distance along the first direction between the first resistance layer and the first deformation surface, or The sensor of configuration 7 or 8, wherein the first distance is greater than the second distance and the third distance is less than the fourth distance.

[0111] (Configuration 10) a first distance along the first direction between the first intermediate conductive layer and the first intermediate opposing surface is longer than a second distance along the first direction between the first intermediate conductive layer and the first intermediate surface; the first resistive layer is between the first substrate and the first detection layer; or 9. The sensor of any one of configurations 7-8, wherein the first distance is less than the second distance, and the first detection layer is between the first substrate and the first resistive layer.

[0112] (Configuration 11) the first intermediate portion includes a first intermediate conductive layer; the first intermediate conductive layer is provided on the first intermediate opposing surface, 9. The sensor of claim 7 or 8, wherein the first detection layer is disposed on the first deformation surface.

[0113] (Configuration 12) The first structure is A second fixed portion fixed to the first base; The first fixed portion is supported by the second fixed portion. 2 A deformation portion; A second intermediate portion supported by the second deformation portion; Further comprising: the first movable portion is supported by the first intermediate portion and the second intermediate portion, a second gap is provided between the first base and the second deformation portion and between the first base and the second intermediate portion; the second deformation portion includes a second deformation facing surface facing the first base and a second deformation surface, the second deformation facing surface being between the first base and the second deformation surface in the first direction; the second intermediate portion includes a second intermediate facing surface facing the first base and a second intermediate surface, the second intermediate facing surface being between the first base and the second intermediate surface in the first direction; the second deformation surface is deformable in response to the gas contained in the space, The sensor of any one of configurations 7 to 11, wherein, as the temperature increases, the second deformable surface deforms to one of the concave and convex shapes, and the first intermediate surface deforms to the other of the concave and convex shapes.

[0114] (Configuration 13) 13. The sensor of claim 12, wherein the first movable portion is between the first intermediate portion and the second intermediate portion.

[0115] (Configuration 14) the first structure includes a second connection portion that connects the second deformation portion and the second intermediate portion, a second connection direction from the second deformation portion to the second intermediate portion intersects with the first direction, a width of at least a portion of the second connection portion along a second connection cross direction is narrower than a width of the second intermediate portion along the second connection cross direction; 14. The sensor of claim 12 or 13, wherein the second connection cross direction intersects a plane including the first direction and the second connection direction.

[0116] (Configuration 15) A control unit is further provided. The control unit is capable of performing a first mode operation, the control unit is capable of outputting a first signal according to a first capacitance between the first fixed electrode and the first movable electrode in the first mode operation; 15. The sensor according to any one of configurations 7 to 14, wherein the first capacitance changes depending on the gas contained in the space.

[0117] (Configuration 16) The control unit is capable of performing a second mode operation, The sensor described in configuration 15, wherein the control unit, in the second mode operation, is capable of outputting a second signal regarding the presence or absence of an abnormality in the sensor element based on a difference between a first result of detecting the first capacitance while supplying a first current to the first resistance layer and a second result of detecting the first capacitance without supplying the first current to the first resistance layer.

[0118] (Configuration 17) The control unit is capable of performing a second mode operation, The sensor of configuration 15, wherein the control unit, in the second mode operation, is capable of outputting a second signal regarding the presence or absence of an abnormality in the sensor element based on the result of detecting the first capacitance while supplying a first current to the first resistive layer.

[0119] (Configuration 18) 18. The sensor according to any one of configurations 15 to 17, wherein the control unit is provided on the first base.

[0120] (Configuration 19) A plurality of the sensor elements are provided, The control unit is The sensor of configuration 16 or 17, wherein in the second mode operation, when the second signal indicates that there is an abnormality with respect to one of the plurality of sensor elements, the control unit is capable of performing the first mode operation with respect to another one of the plurality of sensor elements.

[0121] (Configuration 20) A first substrate; a first fixed electrode fixed to the first base; A first structure; A control unit; Equipped with The first structure is A first fixed portion fixed to the first base; a first deformation portion supported by the first fixed portion, the first deformation portion including a first resistance layer; A first intermediate portion supported by the first deformation portion; a first movable portion supported by the first intermediate portion, the first movable portion including a first movable electrode facing the first fixed electrode; Including, a first gap is provided between the first base and the first deformation portion and between the first base and the first intermediate portion; a third gap is provided between the first fixed electrode and the first movable electrode; the first deformation portion includes a first deformation opposing surface facing the first base and a first deformation surface, the first deformation opposing surface being between the first base and the first deformation surface in a first direction from the first base to the first movable portion, the first intermediate portion includes a first intermediate facing surface facing the first base and a first intermediate surface, the first intermediate facing surface being between the first base and the first intermediate surface in the first direction; With an increase in temperature, the first deformation surface deforms into one of a concave shape and a convex shape, and the first intermediate surface deforms into the other of the concave shape and the convex shape, The control unit is capable of changing a first capacitance between the first fixed electrode and the first movable electrode by supplying a current to the first resistive layer.

[0122] According to the embodiment, it is possible to provide a sensor and a capacitor device capable of improving characteristics.

[0123] In this specification, the state of being electrically connected includes a state in which the components are connected through direct contact as well as a state in which the components are connected via another conductive member or the like.

[0124] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0125] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the sensor and capacitor device, such as the base, structure, support, deformation part, intermediate part, movable part, fixed electrode, and control part, are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in the same way and obtain the same effect by appropriately selecting them from the known range.

[0126] Any combination of two or more elements of each embodiment, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0127] In addition, all sensors and capacitor devices that can be implemented by a person skilled in the art by making appropriate design modifications based on the sensor and capacitor device described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0128] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0129] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0130] 10E...sensor element; 10S...first structure; 11A, 12A...first and second fixed connection parts; 11AW, 12AW...width; 11B, 12B...first and second movable connection parts; 11BW, 12BW...width; 11C, 12C...first and second connection parts; 11CW, 12CW...width; 11F, 12F...first and second deformation parts; 11FW, 12FW...width; 11L...insulating member; 11M, 12M...first and second intermediate parts; 11ML...first intermediate conductive layer; 11MW, 12MW...width; 11R, 12R...first and second resistive layers; 11S, 12S...first and second detection layers; 11X, 12X...first and second fixed parts; 21...first movable part; 21A...first conductive layer, 21E...first movable electrode, 31, 32...anchor spring, 41...first base, 41a...substrate, 41i...insulating layer, 51E...first fixed electrode, 51i...insulating layer, 70...control unit, 75a-75d...wiring, 76a, 76b...terminal, ΔCm...difference, 110-117, 119, 120, 121...sensor, 210...capacitor device, AR1, AR2...arrow, C1...first capacitance, Cm...measured value, D1-D3...first-third directions, ER1-ER4...error, F1, F2...first-second deformation surface, Fa1, Fa2...first-second deformation opposing surface, Ia1...current value, Im1...current, It1, It2...first-second current, M1, M2...first and second intermediate surfaces, MC1...measurement, MO1, MO2...first and second mode operation, MZ1...set, Ma1, Ma2...first and second intermediate opposing surfaces, RG0...reference value, Rh...resistance, Rth1, Rth2...reference value, ST1~ST3...first to third states, V01, V02...reference value m, VR...applied voltage, Va1...voltage value, Vm1...voltage, Vt1, Vt2...first and second voltages, d1~d4...first to fourth distances, g1~g3...first to third gaps, sig1, sig2...first and second signals, tm0...time, z1, z2...distance

Claims

1. A first substrate; a first fixed electrode fixed to the first base; A first structure; A sensor element including: The first structure is A first fixing portion fixed to the first base; A first deformation portion supported by the first fixed portion; A first intermediate portion supported by the first deformation portion; a first movable portion supported by the first intermediate portion, the first movable portion including a first movable electrode facing the first fixed electrode; Including, a first gap is provided between the first base and the first deformation portion and between the first base and the first intermediate portion; a third gap is provided between the first fixed electrode and the first movable electrode; the first deformation portion includes a first deformation opposing surface facing the first base and a first deformation surface, the first deformation opposing surface being between the first base and the first deformation surface in a first direction from the first base to the first movable portion, the first intermediate portion includes a first intermediate opposing surface facing the first base and a first intermediate surface, the first intermediate opposing surface being between the first base and the first intermediate surface in the first direction; the first deformation surface is deformable in response to a gas contained in a space around the first structure, A sensor, wherein as temperature increases, the first deformation surface deforms into one of a concave shape and a convex shape, and the first intermediate surface deforms into the other of the concave shape and the convex shape.

2. the first structure includes a first connection portion that connects the first deformation portion and the first intermediate portion, a first connection direction from the first deformation portion to the first intermediate portion intersects with the first direction; a width of at least a portion of the first connection portion along a first connection cross direction is narrower than a width of the first intermediate portion along the first connection cross direction; The sensor of claim 1 , wherein the first connection cross direction intersects a plane that includes the first direction and the first connection direction.

3. The first deformation portion is A first resistive layer; A first detection layer; and Including, The sensor of claim 1 or 2, wherein the first sensing layer is deformable in response to the gas.

4. The sensor of claim 3 , wherein at least a portion of the first sensing layer overlaps the first resistive layer in the first direction.

5. the first intermediate portion includes a first intermediate conductive layer; a first distance along the first direction between the first intermediate conductive layer and the first intermediate opposing surface is shorter than a second distance along the first direction between the first intermediate conductive layer and the first intermediate opposing surface, and a third distance along the first direction between the first resistance layer and the first deformation opposing surface is longer than a fourth distance along the first direction between the first resistance layer and the first deformation surface, or The sensor of claim 3 or 4, wherein the first distance is greater than the second distance and the third distance is less than the fourth distance.

6. the first intermediate portion includes a first intermediate conductive layer; the first intermediate conductive layer is provided on the first intermediate opposing surface, The sensor according to claim 3 or 4, wherein the first detection layer is provided on the first deformation surface.

7. The first structure is A second fixing portion fixed to the first base; A second deformation portion supported by the second fixed portion; A second intermediate portion supported by the second deformation portion; Further comprising: the first movable portion is supported by the first intermediate portion and the second intermediate portion, a second gap is provided between the first base and the second deformation portion and between the first base and the second intermediate portion; the second deformation portion includes a second deformation facing surface facing the first base and a second deformation surface, the second deformation facing surface being between the first base and the second deformation surface in the first direction, the second intermediate portion includes a second intermediate facing surface facing the first base and a second intermediate surface, the second intermediate facing surface being between the first base and the second intermediate surface in the first direction; the second deformation surface is deformable in response to the gas contained in the space, A sensor as described in any one of claims 4 to 6, wherein as the temperature increases, the second deformation surface deforms into one of the concave and convex shapes, and the first intermediate surface deforms into the other of the concave and convex shapes.

8. A control unit is further provided. The control unit is capable of performing a first mode operation, the control unit is capable of outputting a first signal according to a first capacitance between the first fixed electrode and the first movable electrode in the first mode operation, The sensor according to claim 3, wherein the first capacitance varies depending on the gas contained in the space.

9. The control unit is capable of performing a second mode operation, 9. The sensor of claim 8, wherein the control unit is capable of outputting a second signal regarding the presence or absence of an abnormality in the sensor element based on a difference between a first result of detecting the first capacitance while supplying a first current to the first resistance layer and a second result of detecting the first capacitance without supplying the first current to the first resistance layer in the second mode operation.

10. The control unit is capable of performing a second mode operation, 9. The sensor according to claim 8, wherein the control unit is capable of outputting a second signal regarding the presence or absence of an abnormality in the sensor element based on a result of detecting the first capacitance while supplying a first current to the first resistance layer in the second mode operation.

11. A first substrate; a first fixed electrode fixed to the first base; A first structure; A control unit; Equipped with The first structure is A first fixing portion fixed to the first base; a first deformation portion supported by the first fixed portion, the first deformation portion including a first resistance layer; A first intermediate portion supported by the first deformation portion; a first movable portion supported by the first intermediate portion, the first movable portion including a first movable electrode facing the first fixed electrode; Including, a first gap is provided between the first base and the first deformation portion and between the first base and the first intermediate portion; a third gap is provided between the first fixed electrode and the first movable electrode; the first deformation portion includes a first deformation opposing surface facing the first base and a first deformation surface, the first deformation opposing surface being between the first base and the first deformation surface in a first direction from the first base to the first movable portion, the first intermediate portion includes a first intermediate opposing surface facing the first base and a first intermediate surface, the first intermediate opposing surface being between the first base and the first intermediate surface in the first direction; With an increase in temperature, the first deformation surface deforms into one of a concave shape and a convex shape, and the first intermediate surface deforms into the other of the concave shape and the convex shape, The control unit is capable of changing a first capacitance between the first fixed electrode and the first movable electrode by supplying a current to the first resistive layer.

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