Shrouded firing chamber for mask cleaning

Abstract

An embodiment of a bake chamber is provided herein. In some embodiments, a bake chamber for baking a substrate includes a chamber body enclosing an interior space, a heater disposed within the interior space, the heater configured to have a surface temperature of about 100° C. to about 400° C. during use, a shroud disposed opposite the heater within the interior space, the shroud including a central opening fluidly coupled to a gas inlet, a plurality of substrate lift pins configured to support a substrate between the heater within the interior space and the shroud, the shroud including a plurality of first openings for facilitating the plurality of substrate lift pins, and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior space extends from the gas inlet, around the heater, and to the gas outlet.

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure generally relate to substrate processing apparatus. [Background technology]

[0002] Substrates used in the semiconductor manufacturing industry are often cleaned to remove unwanted materials such as contaminants and other unwanted particles that are generated on the substrate during processing. Substrates may include semiconductor wafers, chamber components, photomasks, etc. After undergoing wet or dry cleaning processes, the substrate may still have unwanted moisture, residue, or haze remaining on the substrate. Bake chambers may be used to remove the remaining moisture, unwanted particles, and haze from the substrate. However, typical bake chambers may oxidize the heating components and materials surrounding the heating components, causing defects, or the high temperatures may cause thermal stresses that can cause particles to flake off from the surface of the heating components, contaminating the substrate. Summary of the Invention

[0003] Accordingly, we provide an improved bake chamber for cleaning substrates.

[0004] Embodiments of bake chambers and methods of using the same are provided herein. In some embodiments, a bake chamber for baking a substrate includes a chamber body enclosing an interior space, a heater disposed within the interior space, the heater configured to have a surface temperature of about 100° C. to about 400° C. during use, a shroud disposed opposite the heater within the interior space, the shroud including a central opening fluidly coupled to a gas inlet, a plurality of substrate lift pins configured to support a substrate between the heater and the shroud within the interior space such that the heater heats the substrate by convection, the shroud including a plurality of first openings for facilitating the plurality of substrate lift pins, and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior space extends from the gas inlet to an area within the shroud, around the heater, and to the gas outlet.

[0005] In some embodiments, a bake chamber for baking a photomask includes a chamber body enclosing an interior space; a heater disposed within the interior space, the heater configured to have a surface temperature of about 100° C. to about 400° C. during use; a shroud disposed within the interior space opposite the heater, the shroud having a conical shape and including a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support the photomask between the heater and the shroud within the interior space such that the heater heats the photomask by convection, the shroud including a plurality of first openings for facilitating the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior space extends from the gas inlet to an area within the shroud, around the heater, and to the gas outlet.

[0006] In some embodiments, a method of baking a substrate in a bake chamber includes placing a substrate on a plurality of substrate lift pins between a heater within an interior space of the bake chamber and a shroud having a central opening coupled to a gas inlet, flowing an inert gas through the gas inlet such that the inert gas flows from the gas inlet to an area within the shroud, around the substrate, around the heater, and to a gas outlet on the opposite side of the bake chamber from the gas inlet, baking the substrate by convection using the heater to dissociate residues on the substrate, and evacuating the residues through the gas outlet.

[0007] Other further embodiments of the present disclosure are described below.

[0008] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments thereof as illustrated in the accompanying drawings, which illustrate only typical embodiments of the present disclosure, and are therefore not to be considered as limiting the scope, since the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram of a multi-chamber processing tool having a bake chamber in accordance with at least some embodiments of the present disclosure. [Figure 2A] FIG. 13 is a schematic cross-sectional side view of a bake chamber in a transfer position according to at least some embodiments of the present disclosure. [Figure 2B] FIG. 2 is a schematic cross-sectional side view of a bake chamber in a processing position according to at least some embodiments of the present disclosure. [Diagram 3] FIG. 1 is a schematic top view of an interior space of a firing chamber according to at least some embodiments of the present disclosure. [Figure 4] 1 is a flowchart of a method of baking a substrate in a bake chamber according to at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements common to each of the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

[0011] An embodiment of a bake chamber for baking a substrate is provided herein. The bake chamber is configured to heat the substrate to remove unwanted particles or residues after the substrate has undergone a wet cleaning process or a dry cleaning process. The substrate may be, for example, a semiconductor wafer, a photomask, or the like. In the example of a photomask, ammonium sulfate residue or haze may remain on the photomask after the wet cleaning process or the dry cleaning process. When the photomask is heated to about 70° C. to about 150° C., the ammonium sulfate residue dissociates from the photomask.

[0012] The dissociated residue may then be removed from the interior space of the bake chamber. The bake chambers provided herein advantageously include a shroud within the interior space to direct an inert gas to a region proximate the surface of the substrate having the residue and dilute other unwanted gas particles in the region. Diluting the region of unwanted gas particles has the advantage that the substrate can be heated at atmospheric pressure by convection heating rather than radiative heating while minimizing unwanted reactions between the residue and the unwanted gas particles. Heating by convection allows the heaters in the bake chamber to be operated at lower surface temperatures (e.g., about 100° C. to about 400° C.), advantageously reducing particle flaking from the heater.

[0013] FIG. 1 illustrates a schematic diagram of a multi-chamber processing tool (tool) 100 having a bake chamber 150 in accordance with at least some embodiments of the present disclosure. The tool 100 generally includes a factory interface 102, a transfer chamber 106 coupled to the factory interface 102, and multiple processing chambers 105 including a bake chamber 150 coupled to the transfer chamber 106. The factory interface 102 includes multiple load ports 104 for receiving one or more substrates 112. The one or more substrates 112 can be semiconductor wafers, carrier substrates, photomasks, etc. In some embodiments, the multiple load ports 104 are disposed along a common side of the factory interface 102. A factory interface robot 110 is disposed within an interior space 108 of the factory interface 102 and can shuttle or transfer the one or more substrates 112 from the multiple load ports 104 to the transfer chamber 106. The factory interface robot 110 can be configured for rotational movement within the interior space 108, lateral movement within the interior space 108, or both.

[0014] The transfer chamber 106 is coupled to the factory interface 102 and, in some embodiments, is disposed opposite the multiple load ports 104 of the factory interface 102. The transfer chamber 106 includes a transfer robot 116 disposed therein for shuttle one or more substrates 112 received from the factory interface robot 110 to one or more processing chambers 105 coupled to the transfer chamber. The transfer robot 116 may be configured for rotational movement, lateral movement, or both. For example, lateral movement may be accomplished via rails on the floor of the transfer chamber 106 or via wheels or tracks under the transfer robot 116. An arm 122 of the transfer robot 116 may be extended or retracted to move one or more substrates 112 into and out of each of the multiple processing chambers 105.

[0015] In some embodiments, the transfer robot 116 is configured to receive the one or more substrates 112 directly from the factory interface robot 110. In some embodiments, the transfer robot 116 is configured to receive the one or more substrates 112 indirectly from the factory interface robot 110. For example, in some embodiments, one of the factory interface 102 or the transfer chambers 106 includes a buffer 120 configured to hold one or more of the one or more substrates 112. The transfer robot 116 may be configured to transfer the one or more substrates 112 to the buffer 120, and the transfer robot 116 may be configured to transfer the one or more substrates 112 from the buffer 120 to the multiple processing chambers 105 and back to the buffer 120 from the multiple processing chambers 105.

[0016] The transfer chamber 106 may include one or more environmental control devices. For example, the airflow openings of the transfer chamber 106 may include filters to filter the airflow entering the transfer chamber 106. Other environmental control devices may include one or more of a humidity control device, a static control device, a temperature control device, or a pressure control device.

[0017] The one or more processing chambers 105 may be coupled to the transfer chamber 106 at a right angle or at an angle to the transfer chamber 106. The multiple processing chambers 105 may be sealingly engaged with the transfer chamber 106. The transfer chamber 106 typically operates at atmospheric pressure, but may be configured to operate at vacuum pressure. The multiple processing chambers 105 are configured to perform one or more processing steps on one or more substrates 118 being processed in the tool 100. For example, the multiple processing chambers 105 may include one or more wet cleaning chambers 130 (three shown in FIG. 1 ) configured to clean the one or more substrates 112 with a liquid, e.g., water. The multiple processing chambers 105 may include one or more dry cleaning chambers 140 (two shown in FIG. 1 ) configured to perform a dry cleaning process on the one or more substrates 112, e.g., via a plasma etching or plasma ashing procedure. The one or more processing chambers 105 include at least one bake chamber, e.g., bake chamber 150 configured to heat one or more substrates to remove residue or haze remaining after a wet or dry cleaning process. In some embodiments, the one or more wet cleaning chambers 130 are located on a different side of the transfer chamber 106 than the one or more dry cleaning chambers 140.

[0018] 2A and 2B show schematic cross-sectional side views of bake chamber 150 in a transfer position and a processing position, respectively, according to at least some embodiments of the present disclosure. Bake chamber 150 may be part of a multi-chamber processing tool, such as tool 100, or may be a stand-alone chamber. Bake chamber 150 generally comprises a chamber body 202 that encloses an interior space 204. In some embodiments, interior space 204 is configured to operate at non-vacuum, or atmospheric pressure. Chamber body 202 may be made of a metal, such as aluminum or stainless steel.

[0019] The heater 208 is disposed within the interior space 204. In some embodiments, the surface temperature of the heater 208 during use is from about 100° C. to about 400° C. In some embodiments, the heater 208 comprises a hot plate including one or more resistive heating elements. In some embodiments, the heater 208 comprises one or more infrared (IR) lamps arranged in a suitable pattern. In some embodiments, the heater 208 is configured to heat the substrate 240 to about 70 degrees to about 150 degrees.

[0020] In some embodiments, a gas inlet 212 and a gas outlet 214 are coupled to the interior space 204 and flow an inert gas into the interior space 204. The gas inlet 212 and the gas outlet 214 are disposed on opposite sides of the chamber body 202 and configured to flow the inert gas across the heater 208. In some embodiments, the gas outlet 214 is disposed vertically above the gas inlet 212. For example, as shown in FIG. 2A, the gas inlet 212 is disposed on the floor of the bake chamber 150 and the gas outlet 214 is disposed on the ceiling of the bake chamber 150. In some embodiments, the gas inlet 212 may be disposed on the ceiling of the bake chamber 150 and the gas outlet 214 may be disposed on the floor of the bake chamber 150. The gas inlet 212 is coupled to a gas source 250 that consists essentially of an inert gas. In some embodiments, the gas source 250 comprises at least about 99.999% inert gas. In some embodiments, the inert gas comprises nitrogen, argon, or the like. In some embodiments, the inert gas comprises a mixture of inert gases. In some embodiments, a gas inlet valve 224 is disposed between the gas inlet 212 and the gas source 250 to selectively flow the inert gas into the interior volume 204. The gas outlet 214 is fluidly coupled to an exhaust line 230.

[0021] The shroud 260 is disposed opposite the heater 208 within the interior space 204. The shroud 260 generally includes a narrow lower end 264 having a central opening 262 fluidly coupled to the gas inlet 212. In some embodiments, the shroud 260 extends radially outward from the narrow lower end 264 to a wider upper end 266. In some embodiments, the shroud 260 has an inverted cone or pyramid shape. In some embodiments, the shroud 260 has a bowl shape. In some embodiments, the gas outlet 214 is disposed in the chamber body 202 opposite the shroud 260 such that the gas flow passage 234 through the interior space 204 extends from the gas inlet 212 to a region 222 within the shroud 260, around the heater 208, and to the gas outlet 214.

[0022] A plurality of substrate lift pins 215 are disposed within the interior space 204 and are configured to support the substrate 240 between the heater 208 and the shroud 260 within the interior space 204 such that heat from the heater 208 can impinge on the substrate 240 via convection. In some embodiments, the heater 208 has an outer diameter greater than an outer diameter or width of the substrate 240. The substrate 240 may be one of the one or more substrates 112 of FIG. 1. In some embodiments, the plurality of substrate lift pins 215 are configured to support the substrate 240 about 1 mm to about 3 mm from the heater 208. In some embodiments, the shroud 260 includes a plurality of first openings 206 for facilitating the plurality of substrate lift pins 215, where the plurality of substrate lift pins are coupled to a platform for simultaneously raising or lowering the plurality of substrate lift pins.

[0023] In some embodiments, a plurality of edge ring lift pins 217 are disposed within the interior space 204 to support the edge ring 220 when the edge ring 220 is disposed thereon. The edge ring 220 is configured to surround the substrate 240 to enhance temperature uniformity of the substrate 240 during heating. In some embodiments, the plurality of edge ring lift pins 217 extend through a plurality of second openings 238 in the shroud 260. In some embodiments, the plurality of edge ring lift pins 217 are disposed radially outward of the plurality of substrate lift pins 215. In some embodiments, the plurality of substrate lift pins 215 includes four lift pins. In some embodiments, the plurality of edge ring lift pins 217 comprises four lift pins.

[0024] In some embodiments, one or more first lift mechanisms 242 are coupled to the plurality of substrate lift pins 215 and configured to raise or lower the substrate 240 within the interior space 204. In some embodiments, one or more second lift mechanisms 244 are coupled to the plurality of edge ring lift pins 217 and configured to raise or lower the edge ring 220. In some embodiments, the plurality of substrate lift pins 215 are coupled to the platform 216 and the one or more first lift mechanisms 242 comprise a single first lift mechanism configured to raise or lower the platform 216 such that the substrate lift pins are raised or lowered simultaneously. In some embodiments, each of the plurality of substrate lift pins 215 is coupled to each of the one or more first lift mechanisms 242 to independently control the raising or lowering of each of the plurality of substrate lift pins 215. Similarly, the plurality of edge ring lift pins 217 may be configured to be independently controlled or may be simultaneously controlled via a single second lift mechanism.

[0025] FIG. 3 shows a schematic top view of the interior space 204 of the bake chamber 150 according to at least some embodiments of the present disclosure. In some embodiments, the chamber body 202 has a circular shape when viewed from the top of the bake chamber 150. In some embodiments, the substrate 240 is a photomask having a square shape. In some embodiments, the edge ring 220 has a central opening 302 for accommodating the substrate 240. In some embodiments, the edge ring 220 has a square shape. In some embodiments, the central opening 302 is square. In some embodiments, as shown in FIG. 3, the edge ring 220 has a circular shape with a square central opening 302. In some embodiments, the edge ring 220 has a width 306 of about 1.5 inches to about 3.0 inches from the outer sidewall of the edge ring 220 to the central opening 302. The edge ring 220 extends the bake surface of the substrate 240, advantageously promoting temperature uniformity across the substrate 240. In some embodiments, the thickness of the edge ring 220 is similar to the thickness of the substrate 240. In some embodiments, the edge ring 220 is made of a similar or the same material as the substrate 240. In some embodiments, the outer diameter of the heater 208 is larger than the outer diameter of the edge ring 220.

[0026] FIG. 4 shows a flow chart of a method 400 of baking a substrate (e.g., substrate 240) in a bake chamber (e.g., bake chamber 150) according to at least some embodiments of the present disclosure. At 402, the method 400 includes placing a substrate on a plurality of substrate lift pins (e.g., a plurality of substrate lift pins 215) in an interior space (e.g., interior space 204) of the bake chamber between a heater (e.g., heater 208) and a shroud (e.g., shroud 260) having a central opening coupled to a gas inlet (e.g., gas inlet 212). The substrate may be placed in the bake chamber via a transfer slot (e.g., transfer slot 218). The substrate may be placed in the bake chamber manually or via a transfer robot (e.g., transfer robot 116). In some embodiments, the substrate is a photomask.

[0027] At 404, the method 400 includes flowing an inert gas to a gas inlet such that the inert gas flows from the gas inlet to an area within the shroud (e.g., area 222), around the substrate, around the heater, and to a gas outlet (e.g., gas outlet 214) opposite the gas inlet of the bake chamber. Flowing the inert gas through the area within the shroud dilutes or pushes unwanted particles away from near the residue surface (e.g., residue surface 228) of the substrate. The unwanted particles may include one or more of oxygen gas, water vapor, sulfur dioxide, or ammonium, which may react with the residue. In some embodiments, the bake chamber is configured to dilute the unwanted particles from the area within the shroud and to retain the unwanted particles in an area outside the shroud.

[0028] In some embodiments, the substrate may be placed in a central opening (e.g., central opening 302) of an edge ring (e.g., edge ring 220) prior to flowing the inert gas. In some embodiments, the edge ring is supported by edge ring lift pins (e.g., edge ring lift pins 217). In some embodiments, the edge ring is lowered to a transfer position by lowering the edge ring lift pins prior to placing the substrate on the substrate lift pins. In some embodiments, the substrate lift pins are raised relative to the edge ring lift pins prior to placing the substrate on the substrate lift pins.

[0029] At 406, the method 300 includes baking the substrate by convection using a heater (e.g., heater 208) disposed in the interior volume of the bake chamber to dissociate residues on the substrate. In some embodiments, atmospheric pressure is maintained in the interior volume during baking. In some embodiments, baking the substrate includes heating the substrate to a temperature of about 70° C. to about 150° C. In some embodiments, the bake time may be about 1 minute to about 15 minutes.

[0030] At 408, the method 400 includes exhausting residues dissociated from the substrate via a gas outlet. Once the bake is complete, the substrate may be removed from the bake chamber via a transfer slot. In some embodiments, the edge ring may be lowered prior to removing the substrate from the bake chamber. In some embodiments, the substrate may be raised prior to removing the substrate from the bake chamber.

[0031] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. A bake chamber for baking a substrate having a predetermined width or a predetermined outer diameter, comprising: A chamber body that encloses an internal space; a heater disposed within the interior space, the heater configured to provide a surface temperature of about 100° C. to about 400° C. during use; a shroud disposed in the interior space opposite the heater, the shroud including a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support the substrate within the interior space between the heater and the shroud such that the heater heats the substrate by convection, the shroud including a plurality of first openings for facilitating the plurality of substrate lift pins; a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior space extends from the gas inlet, around the heater, and to the gas outlet; A baking chamber comprising:

2. 10. The bake chamber of claim 1, further comprising an edge ring disposed on a plurality of edge ring lift pins and configured to surround the substrate, the plurality of edge ring lift pins extending through a plurality of second openings in the shroud.

3. The bake chamber of claim 2 , wherein the substrate is a photomask and the edge ring has a square central opening.

4. 3. The bake chamber of claim 2, wherein the edge ring has a width from an outer wall of the edge ring to the central opening of about 1.5 inches to about 3.0 inches.

5. 10. The bake chamber of claim 1, wherein the plurality of substrate lift pins are coupled to a platform for simultaneously raising or lowering the plurality of substrate lift pins.

6. The bake chamber of claim 1 , wherein the heater comprises a hot plate including one or more resistive heating elements.

7. 10. The bake chamber of claim 1, wherein the plurality of substrate lift pins are configured to support the substrate such that the substrate is a distance of about 1 mm to about 3 mm from the heater.

8. The bake chamber of claim 1 , wherein the shroud has an inverted cone or pyramid shape.

9. 8. The bake chamber of claim 1, wherein the gas outlet is disposed vertically above the gas inlet.

10. 8. The bake chamber of claim 1, further comprising a gas source consisting essentially of an inert gas coupled to the gas inlet.

11. The bake chamber of claim 1 , wherein the chamber body is circular when viewed from a top surface of the chamber body.

12. The bake chamber of claim 1 , wherein an outer diameter of the heater is greater than the predetermined width or predetermined outer diameter of the substrate.

13. The bake chamber of claim 1 , wherein the heater is configured to heat the substrate to about 70 degrees to about 150 degrees.

14. 8. The firing chamber of claim 1, wherein the gas inlet is located in a floor of the firing chamber and the gas outlet is located in a ceiling of the firing chamber.

15. The bake chamber of claim 1 , wherein the plurality of substrate lift pins comprises four lift pins.

16. 1. A method of baking a substrate in a bake chamber, comprising: placing a substrate on a plurality of substrate lift pins within an interior space of the bake chamber between a heater and a shroud having a central opening coupled to a gas inlet; placing the substrate within a central opening of an edge ring prior to flowing an inert gas; flowing the inert gas through the gas inlet such that the inert gas flows from the gas inlet to an area within the shroud, around the substrate, around the heater, and to a gas outlet on an opposite side of the firing chamber from the gas inlet; baking the substrate by convection using the heater to dissociate residues on the substrate; Discharging the residue through the gas outlet. A method comprising:

17. 17. The method of claim 16, wherein baking the substrate comprises heating the substrate to a temperature of about 70°C to about 150°C.

18. The method of claim 16, further comprising maintaining atmospheric pressure within the interior space during firing.

19. 20. The method of claim 16, wherein the edge ring is supported by a plurality of edge ring lift pins, the method further comprising lowering the edge ring to a transfer position prior to placing the substrate on the plurality of substrate lift pins.

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