Semiconductor Device

Abstract

To provide a technology capable of realizing a semiconductor device having an appropriate terminal.SOLUTION: A semiconductor device includes a semiconductor element, a mold member covering the semiconductor element, and a first terminal and a second terminal that are electrically connected to the semiconductor element, protrude from one side of the molding member, and are alternately provided along the one side. The first terminal includes a first bent portion, and the second terminal includes a second bent portion that is located farther than the first bent portion with respect to one side of the molded member, and has a width that is the same as the width of the first bent portion in plan view.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] Conventionally, a semiconductor device has been proposed in which a plurality of terminals protruding from one side of a molded member are bent alternately near and away from the molded member along that side, i.e., a semiconductor device has been proposed in which the bent portions of the terminals are arranged in a staggered pattern along that side of the molded member.

[0003] Furthermore, for example, Patent Document 1 proposes a configuration in which the width of a bent portion close to the molding member is different from the width of a bent portion far from the molding member. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-75523 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the configuration of Patent Document 1, the width of the bent portion close to the molding member is different from the width of the bent portion far from the molding member. However, this configuration has a problem in that when the bending force is constant, the angle at which the terminal is bent at the bent portion varies.

[0006] Therefore, the present disclosure has been made in consideration of the above-mentioned problems, and has an object to provide a technique that makes it possible to realize a semiconductor device having appropriate terminals. [Means for solving the problem]

[0007] A semiconductor device according to the present disclosure includes a semiconductor element, a molding member covering the semiconductor element, and a first terminal and a second terminal electrically connected to the semiconductor element, protruding from one side of the molding member and alternately provided along the one side, the first terminal including a first bent portion, the second terminal being located farther from the one side of the molding member than the first bent portion and having the same width as the first bent portion in a plan view, and a second bent portion being provided between the one side of the molding member and the second bent portion of the second terminal and having a width larger than the width of the second bent portion. Thick part and Including a width of the first bent portion is larger than a width of the other portion of the first terminal, and a position of the first bent portion in a protruding direction of the first terminal is the same as a position of the thick portion in a protruding direction of the second terminal. . Effect of the Invention

[0008] According to the present disclosure, the first terminal includes a first bent portion, and the second terminal includes a second bent portion that is located farther from one side of the molding member than the first bent portion and has the same width as the first bent portion in a plan view. With this configuration, a semiconductor device having appropriate terminals can be realized. [Brief description of the drawings]

[0009] [Figure 1] 1 is a plan view showing a configuration of a semiconductor device according to a first embodiment. [Diagram 2] 1 is a cross-sectional view showing a configuration of a semiconductor device according to a first embodiment. [Diagram 3] 1 is a side view showing the outer shape of a semiconductor device according to a first embodiment. [Figure 4] 1 is a plan view showing a part of the configuration of a semiconductor device according to a first embodiment. [Diagram 5] 1 is a plan view showing a part of the configuration of a semiconductor device according to a first embodiment. [Figure 6] 4 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 7] 11 is a cross-sectional view showing a part of the configuration of a semiconductor device according to Modification 2. FIG. [Figure 8] FIG. 11 is a plan view showing a part of the configuration of a semiconductor device according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described with reference to the accompanying drawings. The features described in each of the following embodiments are merely examples, and not all features are necessarily required. In addition, in the following description, similar components in multiple embodiments are given the same or similar reference numerals, and different components are mainly described. In addition, in the following description, specific positions and directions such as "upper", "lower", "left", "right", "front" or "back" do not necessarily correspond to positions and directions in actual implementation.

[0011] <Embodiment 1> FIG. 1 is a plan view showing the configuration of a semiconductor device according to the first embodiment, and FIG. 2 is a cross-sectional view showing the configuration.

[0012] The semiconductor device according to the first embodiment includes a semiconductor element. The semiconductor element includes an IC (Integrated Circuit) 1, a power chip 2a, a freewheel diode 2b, and a bootstrap diode 3. The IC1, the power chip 2a, the freewheel diode 2b, and the bootstrap diode 3 are electrically connected, and the power chip 2a and the freewheel diode 2b, which are second semiconductor elements, are controlled and driven by the IC1, which is a first semiconductor element. The IC1 on the upper side of FIG. 1 is a high-voltage IC that controls an upper arm consisting of three power chips 2a, and the IC1 on the lower side of FIG. 1 is a low-voltage IC that controls a lower arm consisting of three power chips 2a.

[0013] At least one of the IC 1 and the power chip 2a is a semiconductor switching element such as a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). At least one of the freewheel diode 2b and the bootstrap diode 3 is a diode element such as a Schottky barrier diode (SBD) or a PN junction diode (PND).

[0014] The semiconductor device according to the first embodiment includes a plurality of control terminals 6a, a plurality of power terminals 6b, wires 7, and a molding member 9 in addition to the above-mentioned semiconductor element.

[0015] A control terminal 6a is illustrated on the left side of Figures 1 and 2, and a power terminal 6b is illustrated on the right side of Figures 1 and 2. In the example of Figures 1 and 2, the control terminal 6a and the power terminal 6b are lead frames electrically connected to semiconductor elements. The IC 1 and the bootstrap diode 3 are bonded to an upper surface of any one of the control terminals 6a, and the power chip 2a and the freewheel diode 2b are bonded to an upper surface of any one of the power terminals 6b.

[0016] The wires 7 selectively connect the IC 1, the power chip 2a, the freewheel diode 2b, the bootstrap diode 3, the control terminal 6a, and the power terminal 6b. An electric circuit is formed by these connections. The material of the wires 7 is, for example, gold, copper, aluminum, etc.

[0017] 1 and 2, a molding member 9 covers the semiconductor element, a portion of the control terminals 6a, a portion of the power terminals 6b, and the wires 7. The molding member 9 is a transfer molding member made of an insulating member such as resin. The molding member 9 has a rectangular shape in a plan view, and the multiple control terminals 6a are provided protruding from one side of the molding member 9, and the multiple power terminals 6b are provided protruding from another side opposite to the one side.

[0018] Fig. 3 is a side view showing the external shape of the semiconductor device according to the first embodiment. A control terminal 6a is shown on the upper side of Fig. 3, and a power terminal 6b is shown on the lower side of Fig. 3. The control terminals 6a protrude from the same position in the thickness direction of the molding member 9 (the left-right direction in Fig. 3), and the power terminals 6b protrude from the same position in the thickness direction of the molding member 9. For the sake of convenience in Fig. 2, the portions of the control terminals 6a and power terminals 6b that are not covered by the molding member 9 are shown to extend in the in-plane direction, but more accurately, they are bent as shown in Fig. 3.

[0019] Fig. 4 is a plan view showing the control terminals 6a before being folded. The multiple control terminals 6a include an inner control terminal 6a1 which is a first terminal and an outer control terminal 6a2 which is a second terminal. The inner control terminals 6a1 and the outer control terminals 6a2 are alternately provided along one side of the molded member 9, and Fig. 4 shows one set of the inner control terminal 6a1 and the outer control terminal 6a2.

[0020] The inner control terminal 6a1 includes an inner bent portion 6a6 which is a first bent portion. The outer control terminal 6a2 includes an outer bent portion 6a7 which is a second bent portion, and a wide portion 6a8 which is a part of the outer control terminal 6a2. In the example of Figures 3 and 4, the inner control terminal 6a1 is bent at one inner bent portion 6a6, and the outer control terminal 6a2 is bent at one outer bent portion 6a7.

[0021] The outer bent portion 6a7 is located farther from one side of the molded member 9 than the inner bent portion 6a6. In other words, the distance between one side of the molded member 9 and the outer bent portion 6a7 is greater than the distance between one side of the molded member 9 and the inner bent portion 6a6. The inner control terminals 6a1 and the outer control terminals 6a2 are alternately provided along one side of the molded member 9, so that the inner bent portion 6a6 and the outer Bend part 6a7 are arranged in a staggered manner along one side of the molding member 9.

[0022] The tie bar 6c in Fig. 4 includes a part of the inner control terminal 6a1 and a part of the outer control terminal 6a2. Fig. 5 is a plan view showing the state of the semiconductor device before the inner control terminal 6a1 and the outer control terminal 6a2 are bent in the manufacturing process of the semiconductor device. Note that in Fig. 5, the shapes of the inner control terminal 6a1 and the outer control terminal 6a2 are illustrated in a simplified form. As shown in Fig. 5, the inner control terminal 6a1 and the outer control terminal 6a2 are substantially connected by the tie bar 6c.

[0023] The portion of tie bar 6c indicated by the two-dot chain line in Fig. 4 is removed by cutting using a press or the like. The remaining portion of tie bar 6c after cutting becomes inner bent portion 6a6 of inner control terminal 6a1 and wide portion 6a8 of outer control terminal 6a2. Wide portion 6a8 is provided between one side of molded member 9 and outer bent portion 6a7 of outer control terminal 6a2.

[0024] As shown in FIG. 4, the width of the inner bent portion 6a6 and the width of the outer bent portion 6a7 are the same in plan view. Here, the width being the same means that the difference between the width of the inner bent portion 6a6 and the width of the outer bent portion 6a7 is, for example, 2% or less of one of the widths. In addition, among the inner control terminals 6a1 exposed from the molded member 9, the width of the inner bent portion 6a6 is the largest. Among the outer control terminals 6a2 exposed from the molded member 9, the width of the thick width portion 6a8 is the largest, and the width of the tip side (upper side of FIG. 4) is the smallest. In this embodiment 1, the width of the thick width portion 6a8 is not only larger than the width of the outer bent portion 6a7, but also larger than the width of the inner bent portion 6a6 that is separated from one side of the molded member 9 by the same distance as the distance between one side of the molded member 9 and the thick width portion 6a8.

[0025] 6 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment. First, in a power chip die bonding process in step S1, a power chip 2a is bonded to a lead frame with a bonding material such as solder. In a diode die bonding process in step S2, a free wheel diode 2b and a bootstrap diode 3 are bonded to the lead frame with a bonding material such as solder. In an IC die bonding process in step S3, an IC 1 is bonded to the lead frame with a bonding material such as solder. The processes in steps S1 to S3 may be performed in parallel or in a reverse order.

[0026] In the wire bonding process of step S4, an electric circuit is formed by selectively connecting the lead frame, IC1, power chip 2a, freewheeling diode 2b, and bootstrap diode 3 with wires 7. The state after the wire bonding process is completed substantially corresponds to the state of FIG.

[0027] In the transfer molding process of step S5, a part of the lead frame, the power chip 2a, the freewheel diode 2b, the bootstrap diode 3, the IC 1, and the wires 7 are sealed with a molding member 9 so as to be insulated from the outside. The state after the transfer molding process is completed substantially corresponds to the state shown in FIG.

[0028] In a tie bar cutting process in step S6, the portions indicated by the two-dot chain lines in Fig. 4 are cut and removed. In a lead cutting process in step S7, the tips of the lead frames are formed by cutting with a press or the like, and the inner control terminals 6a1 and the outer control terminals 6a2 before being bent are formed.

[0029] In the lead forming process of step S8, the inner control terminals 6a1 are bent at the inner bent portions 6a6, and the outer control terminals 6a2 are bent at the outer bent portions 6a7. Through the above processes, the semiconductor device according to the first embodiment as shown in FIG.

[0030] <Summary of the first embodiment> In the semiconductor device according to the first embodiment, the width of the inner bending portion 6a6 and the width of the outer bending portion 6a7 are the same in a plan view. Therefore, even if the force for bending the inner control terminal 6a1 and the outer control terminal 6a2 is the same, it is possible to reduce the variation between the angle at which the inner control terminal 6a1 is bent at the inner bending portion 6a6 and the angle at which the outer control terminal 6a2 is bent at the outer bending portion 6a7.

[0031] In the first embodiment, a wide portion 6a8, which is larger than the width of the outer bent portion 6a7, is provided in the outer control terminal 6a2 between one side of the molded member 9 and the outer bent portion 6a7. With this configuration, the portion of the outer control terminal 6a2, which is more likely to interfere with the outside than the inner control terminal 6a1, between the one side of the molded member 9 and the outer bent portion 6a7 can be prevented from being deformed by an external force.

[0032] Moreover, in the first embodiment, the semiconductor element includes a bootstrap diode 3 covered with a molding member 9. With such a configuration, it becomes unnecessary to externally attach the bootstrap diode 3 to the molding member 9 at a customer's site or the like, and it becomes possible to miniaturize the device to which the semiconductor device is attached.

[0033] <Variation 1> In the first embodiment, the staggered bent portions are provided on the control terminals 6a, but the staggered bent portions may be provided on the power terminals 6b. The power terminals 6b may include an inner power terminal similar to the inner control terminal 6a1 and an outer power terminal similar to the outer control terminal 6a2. In other words, the width of the bent portion of the inner power terminal and the width of the bent portion of the outer power terminal may be the same, and a thick portion may be provided between one side of the molded member 9 of the outer power terminal and the bent portion.

[0034] In the first embodiment, the control terminal 6a and the power terminal 6b are provided on two sides of the molded member 9, respectively, but both the control terminal 6a and the power terminal 6b may be provided on the same side of the molded member 9. In this configuration, the control terminal 6a and the power terminal 6b may be indistinguishable from each other, and their bent portions may be arranged in a staggered manner. In this configuration, the bent portions may have the same width. The first modification may be applied to the second embodiment described later.

[0035] <Variation 2> In the first embodiment, semiconductor elements such as IC1, power chip 2a, and free wheel diode 2b are mounted on the lead frame, but the configuration inside the molded member 9 may be changed as appropriate. For example, as shown in FIG. 7, the semiconductor device may include a metal layer 11 and an insulating layer 12. The metal layer 11 may be electrically connected to the control terminal 6a or the power terminal 6b by ultrasonic bonding, soldering, or the like, and may include IC1, power chip 2a, and the like. The insulating layer 12 may be bonded to the surface of the metal layer 11 opposite to the surface on which the semiconductor elements are provided. The metal layer 11 and the insulating layer 12 may form an insulating substrate. Note that the second modification may be applied to the second embodiment described later.

[0036] <Modification 3> In the first embodiment, the semiconductor element includes the power chip 2a and the freewheel diode 2b that are provided separately, but this is not limited thereto. For example, the semiconductor element may include an element in which an IGBT region and a diode region are provided on one semiconductor substrate, such as an RC-IGBT (Reverse Conducting - IGBT). In a configuration in which the semiconductor element includes an RC-IGBT, the semiconductor element can be made smaller than a configuration in which the semiconductor element includes the power chip 2a and the freewheel diode 2b, and therefore the semiconductor device can be made smaller.

[0037] The material of the semiconductor element may include a wide band gap semiconductor having a wider band gap than silicon (Si). The wide band gap semiconductor may be, for example, silicon carbide (SiC), gallium nitride (GaN), diamond, etc. In a configuration in which the material of the semiconductor element includes a wide band gap semiconductor, it is possible to reduce the energy loss of the semiconductor device or increase the switching speed.

[0038] In the first embodiment, the semiconductor element includes the first semiconductor element and the second semiconductor element, but the semiconductor element may include only the first semiconductor element or only the second semiconductor element. The third modification may be applied to the second embodiment described later.

[0039] <Embodiment 2> 8 is a plan view showing a part of the semiconductor device according to the second embodiment, specifically, a plan view showing the control terminal 6a before being bent. In the second embodiment, the outer control terminal 6a2 includes an outer bent portion 6a7 which is a second bent portion, a wide portion 6a8, and a narrowed portion 6a9. Other configurations of the second embodiment are similar to those of the first embodiment.

[0040] The wide portion 6a8 formed by cutting the tie bar is provided in the outer control terminal 6a2 between one side of the molded member 9 and the outer bent portion 6a7, similarly to the first embodiment. In the second embodiment, the width of the wide portion 6a8 in a plan view may be larger than the width of the outer bent portion 6a7 or may be smaller than or equal to the width of the outer bent portion 6a7.

[0041] The narrowed portion 6a9 is also called a neck portion and is provided between the outer bent portion 6a7 and the wide portion 6a8. That is, the width of the narrowed portion 6a9 in a plan view is smaller than both the width of the outer bent portion 6a7 and the width of the wide portion 6a8.

[0042] <Summary of the second embodiment> In the semiconductor device according to the second embodiment, the constricted portion 6a9 can increase the distance A between the inner bent portion 6a6 and the wide portion 6a8. This can increase the area where the tie bars are cut, that is, the punching area, and can reduce wear of the punching die. In addition, by increasing the area where the tie bars are cut, the distance A, which is the insulation distance between the inner control terminal 6a1 and the outer control terminal 6a2, can be increased, thereby improving insulation, or by bringing the terminals closer to each other, the semiconductor device can be made smaller. Note that if the width of the wide portion 6a8 in plan view is smaller than the width of the outer bent portion 6a7, the distance A can be further increased.

[0043] It should be noted that the embodiments and modifications may be freely combined, and the embodiments and modifications may be modified or omitted as appropriate. [Explanation of symbols]

[0044] 1 IC, 2a power chip, 2b freewheel diode, 3 bootstrap diode, 6a control terminal, 6a1 inner control terminal, 6a2 outer control terminal, 6a6 inner bent portion, 6a7 outer bent portion, 6a8 wide portion, 6a9 narrow portion, 6b power terminal, 9 molding member, 11 metal layer, 12 insulating layer.

Claims

1. A semiconductor element; a molding member for covering the semiconductor element; a first terminal and a second terminal that are electrically connected to the semiconductor element, protrude from one side of the molding member, and are alternately provided along the one side; Equipped with the first terminal includes a first bent portion, The second terminal is a second bent portion located farther from the one side of the molding member than the first bent portion and having the same width as the first bent portion in a plan view; a wide portion provided between the one side of the mold member of the second terminal and the second bent portion, the wide portion being greater than the width of the second bent portion; Including, a width of the first bent portion is greater than a width of the other portion of the first terminal; a position of the first bent portion in a protruding direction of the first terminal and a position of the wide portion in a protruding direction of the second terminal are the same.

2. 2. The semiconductor device according to claim 1, At least one of the first terminal and the second terminal is a lead frame on which the semiconductor element is provided.

3. 2. The semiconductor device according to claim 1, a metal layer electrically connected to at least one of the first terminal and the second terminal, the metal layer having the semiconductor element provided thereon; an insulating layer bonded to a surface of the metal layer opposite to a surface on which the semiconductor element is provided; The semiconductor device further comprises:

4. 4. The semiconductor device according to claim 1, The semiconductor device includes a first semiconductor element and a second semiconductor element controlled by the first semiconductor element.

5. 5. The semiconductor device according to claim 1, The semiconductor device, wherein the semiconductor element includes a bootstrap diode covered with the molding member.

6. 6. The semiconductor device according to claim 1, A semiconductor device, wherein the material of the semiconductor element includes a wide band gap semiconductor.

7. 7. The semiconductor device according to claim 1, The semiconductor device includes an element in which an IGBT region and a diode region are provided on a single semiconductor substrate.

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