Substrate Processing Equipment

Abstract

To provide a substrate treating apparatus for treating a substrate.SOLUTION: A substrate treating apparatus includes: a housing having a treatment space for treating a substrate; a support unit for supporting the substrate in the treatment space; a shower plate formed with a through-hole through which a process gas is allowed to flow into the treatment space; a plasma source that excites the process gas supplied to the treatment space to generate plasma; and a density adjusting member that changes a dielectric permittivity to adjust density of the plasma generated in the treatment space. The density adjustment member may be located on the shower plate.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an apparatus for processing a substrate, and more particularly to a substrate processing apparatus for performing plasma processing on a substrate. [Background technology]

[0002] Plasma is a gas state created by ionization of ions, radicals, and electrons. Plasma can be generated by very high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes can include an etching process that uses plasma to remove thin films formed on substrates such as wafers. Etching processes are performed when ions and / or radicals of the plasma collide with or react with thin films on the substrate.

[0003] For example, when performing an etching process using plasma, a thin film formed in a portion of the entire region of a substrate is etched more than the process required conditions, and a thin film formed in another portion is etched less than the process required conditions. That is, when processing a substrate using plasma, a difference in etching rate occurs in each region of the substrate. The difference in etching rate in each region of the substrate occurs due to various factors such as the flow of air in the processing space, the uniformity of the supply of process gas in the processing space, the supply position of the process gas, and the uniformity of plasma in the processing space, and these factors cause a difference in plasma density or strength in each region of the processing space where the substrate is plasma-processed. When the density or strength of plasma is generated differently in each region in the processing space, plasma having different conditions acts on each region of the substrate. As a result, it is difficult to uniformly process the entire region of the substrate when processing the substrate using plasma. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Korean Patent No. 10-2175083 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a substrate processing apparatus capable of uniformly processing a substrate.

[0006] Another object of the present invention is to provide a substrate processing apparatus capable of efficiently adjusting the intensity of an electric field generated in each region of a processing space.

[0007] Another object of the present invention is to provide a substrate processing apparatus capable of processing a substrate with plasma having a uniform density by adjusting the strength of an electric field generated in a processing space.

[0008] The object of the present invention is not limited thereto, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0009] The present invention provides a substrate processing apparatus for processing a substrate, the substrate processing apparatus including a housing having a processing space for processing the substrate, a support unit for supporting the substrate in the processing space, a shower plate having through holes for allowing a process gas to flow into the processing space, a plasma source for exciting the process gas supplied to the processing space to generate plasma, and a density adjusting member for adjusting density of the plasma generated in the processing space by changing a dielectric constant, the density adjusting member may be positioned on the shower plate.

[0010] According to an embodiment, the plasma source may include an electrode plate located above the shower plate, and the density adjusting member may be disposed between the shower plate and the electrode plate.

[0011] According to an embodiment, the density adjusting member includes a plurality of dielectric pads, each of which has a different dielectric constant and is spaced apart from each other.

[0012] According to an embodiment, the through holes may be located in spaces between the dielectric pads spaced apart from each other.

[0013] According to one embodiment, the dielectric pad may include a center pad and an edge pad, the center pad having a first dielectric constant and located in a circular center region including a center of the shower plate, and the edge pad having a second dielectric constant and located in a ring-shaped edge region surrounding the center region.

[0014] According to an embodiment, the first dielectric constant may be greater than the second dielectric constant.

[0015] According to one embodiment, the first dielectric constant may be less than or equal to the second dielectric constant.

[0016] According to one embodiment, the dielectric pad may include a plurality of the center pads and a plurality of the edge pads, each of the plurality of center pads being arranged to be spaced apart from each other in the center region, and each of the plurality of edge pads being arranged to be spaced apart from each other in the edge region.

[0017] According to an embodiment, each of the plurality of center pads may have a different dielectric constant from each other, and each of the plurality of edge pads may have a different dielectric constant from each other.

[0018] According to an embodiment, the dielectric pad may be located in at least one of a center region including a center of the shower plate, a middle region surrounding the center region, and an edge region surrounding the middle region.

[0019] According to an embodiment, the density adjusting member may be attached to an upper surface of the shower plate.

[0020] According to one embodiment, the electrode plate may be grounded or may have high frequency power applied to it.

[0021] The present invention also provides a substrate processing apparatus for processing a substrate, the substrate processing apparatus including a housing defining a processing space for processing the substrate, a supporting unit for supporting the substrate in the processing space, a gas supply unit for supplying a process gas, a plasma source for generating an electric field in the processing space to excite the process gas supplied to the processing space, and a density adjusting member for shielding the electric field generated in the processing space and adjusting the density of the plasma generated by exciting the process gas to be different in each region of the processing space.

[0022] According to one embodiment, the density adjustment member includes at least one dielectric pad, and the dielectric pad can shield an electric field generated in at least one of a center region including the center of the processing space, a middle region surrounding the center region, and an edge region surrounding the middle region when viewed from above.

[0023] According to one embodiment, the dielectric pad may include a center pad, a middle pad, and an edge pad, the center pad having a first dielectric constant to shield the electric field in the center region, the middle pad having a second dielectric constant to shield the electric field in the middle region, and the edge pad having a third dielectric constant to shield the electric field in the edge region.

[0024] According to an embodiment, the first dielectric constant, the second dielectric constant, and the third dielectric constant may be different from each other.

[0025] According to an embodiment, the first dielectric constant may be greater than the second dielectric constant and the third dielectric constant, and the second dielectric constant may be greater than the third dielectric constant.

[0026] According to one embodiment, a plurality of center pads are arranged in the center region, a plurality of middle pads are arranged in the middle region, and a plurality of edge pads are arranged in the edge region, and each of the center pads, each of the middle pads, and each of the edge pads may have a different dielectric constant from each other.

[0027] The present invention also provides a substrate processing apparatus for processing a substrate, comprising: a housing having a processing space for processing a substrate, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas, a shower plate having through holes for injecting the process gas into the processing space, an electrode plate disposed above the shower plate and grounded or receiving high frequency power, a lower electrode disposed within the support unit and grounded or receiving high frequency power, and a density adjusting member disposed between the shower plate and the electrode plate and shielding an electric field generated in the processing space by the electrode plate and the lower electrode to adjust a density of plasma generated in the processing space, wherein the density adjusting member includes a plurality of dielectric pads, each of the plurality of dielectric pads having a different dielectric constant and spaced apart from an upper side of the shower plate, and the through holes may be located in spaces between the plurality of dielectric pads spaced apart from each other.

[0028] According to one embodiment, the dielectric pad includes at least one center pad and at least one edge pad, the center pad having a first dielectric constant and located in a circular center region including a center of the shower plate, and the edge pad having a second dielectric constant and located in a ring-shaped edge region surrounding the center region, and the first dielectric constant may be greater than the second dielectric constant. Effect of the Invention

[0029] According to one embodiment of the present invention, a substrate can be processed uniformly.

[0030] Furthermore, according to an embodiment of the present invention, the strength of the electric field generated in each region of the processing space can be efficiently adjusted.

[0031] Furthermore, according to an embodiment of the present invention, the strength of the electric field generated in the processing space can be adjusted to process a substrate with plasma having a uniform density.

[0032] The effects of the present invention are not limited to the effects described above, and effects not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief description of the drawings]

[0033] [Figure 1] 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a schematic diagram of a process chamber according to an embodiment of FIG. 1; [Diagram 3] 3 is a diagram illustrating a top view of a density adjusting member according to an embodiment of FIG. 2; [Figure 4] 4 is a diagram illustrating an outline of plasma being generated in a processing space by the density control member of FIG. 3; [Diagram 5] 3 is a diagram illustrating a density adjusting member according to another embodiment of the present invention, viewed from above; [Figure 6] 6 is a top view showing how plasma density is varied in different regions of a substrate by the density adjusting member of FIG. 5. [Figure 7] 6 is a diagram illustrating a modified embodiment of the density adjusting member of FIG. 5; [Figure 8] 3 is a diagram illustrating a density adjusting member according to another embodiment of the present invention, viewed from above; [Figure 9] 9 is a diagram illustrating an outline of plasma being generated in a processing space by the density control member of FIG. 8; [Figure 10] 9 is a diagram illustrating a modified embodiment of the density adjusting member of FIG. 8; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various ways, and the scope of the present invention should not be interpreted as being limited to the embodiments described below. The embodiments are provided to more completely explain the present invention to those having average knowledge in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

[0035] Terms such as "first" and "second" may be used to describe various components, but the components should not be limited by the terms. The terms may be used to distinguish one component from another. For example, a first component may be named as a second component, and similarly, a second component may be named as a first component, without departing from the scope of the present invention.

[0036] Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS.

[0037] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG 1, the substrate processing apparatus 1 according to an embodiment of the present invention may include a load port 10, a normal pressure transfer module 20, a vacuum transfer module 30, a load rack chamber 40, and a process chamber 50.

[0038] The load port 10 may be disposed on one side of the atmospheric pressure transfer module 20 described below. At least one load port 10 may be disposed on one side of the atmospheric pressure transfer module 20. The number of load ports 10 may be increased or decreased depending on process efficiency, footprint conditions, etc.

[0039] The container (F) may be placed on the load port 10. The container (F) may be loaded or unloaded to the load port 10 by a transport means (not shown) such as an overhead transfer apparatus (OHT), an overhead conveyor, or an automatic guided vehicle, or by an operator. The container (F) may include various types of containers depending on the type of goods to be stored. The container (F) may be a sealed container such as a front opening unified pod (FOUP).

[0040] The atmospheric pressure transfer module 20 and the vacuum transfer module 30 may be arranged along a first direction 2. Hereinafter, a direction perpendicular to the first direction 2 when viewed from above is defined as a second direction 4. Also, a direction perpendicular to a plane including both the first direction 2 and the second direction 4 is defined as a third direction 6. The third direction 6 may refer to a direction perpendicular to the ground.

[0041] The atmospheric pressure transfer module 20 can transfer the substrate (W) between the container (F) and the load rack chamber 40 described below. According to one embodiment, the atmospheric pressure transfer module 20 can either extract the substrate (W) from the container (F) and return it to the load rack chamber 40, or extract the substrate (W) from the load rack chamber 40 and return it to the inside of the container (F).

[0042] The atmospheric pressure transfer module 20 may include a return frame 220 and a first return robot 240. The return frame 220 may be disposed between the load port 10 and the load rack chamber 40. The load port 10 may be connected to the return frame 220. The internal atmosphere of the return frame 220 may be maintained at atmospheric pressure. According to an embodiment, the inside of the return frame 220 may be created at atmospheric pressure.

[0043] A return rail 230 is disposed on the return frame 220. The length direction of the return rail 230 may be parallel to the length direction of the return frame 220. A first return robot 240 may be positioned on the return rail 230.

[0044] The first return robot 240 can return a substrate (W) between a container (F) seated on the load port 10 and a load rack chamber 40 described below. The first return robot 240 can move forward and backward in a second direction 4 along the return rail 230. The first return robot 240 can move in a vertical direction (e.g., a third direction 6). The first return robot 240 has a first return hand 242 that moves forward, backward, or rotates on a horizontal plane. The substrate (W) is placed on the first return hand 242. The first return robot 240 can have a plurality of first return hands 242. The plurality of first return hands 242 can be arranged to be spaced apart from each other in the vertical direction.

[0045] The vacuum transfer module 30 may be disposed between a load rack chamber 40 (to be described later) and a process chamber 50. The vacuum transfer module 30 may include a transfer chamber 320 and a second return robot 340.

[0046] The internal atmosphere of the transfer chamber 320 may be maintained at vacuum pressure. A second return robot 340 may be disposed in the transfer chamber 320. For example, the second return robot 340 may be disposed in the center of the transfer chamber 320. The second return robot 340 returns the substrate (W) between a load rack chamber 40 and a process chamber 50, which will be described later. The second return robot 340 may also return the substrate (W) between the process chambers 50.

[0047] The second return robot 340 may move along a vertical direction (e.g., the third direction 6). The second return robot 340 may have a second return hand 342 that moves forward, backward, or rotates on a horizontal plane. A substrate (W) is placed on the second return hand 342. The second return robot 340 may have a plurality of second return hands 342. The plurality of second return hands 342 may be disposed to be spaced apart from each other in the vertical direction.

[0048] At least one process chamber 50, which will be described later, may be connected to the transfer chamber 320. According to an embodiment, the transfer chamber 320 may be polygonal in shape. The load rack chamber 40 and the process chambers 50, which will be described later, may be arranged around the transfer chamber 320. For example, as shown in FIG. 1, the hexagonal transfer chamber 320 may be arranged in the center of the vacuum transfer module 30, and the load rack chamber 40 and the process chambers 50 may be arranged around the hexagonal transfer chamber 320. Unlike the above, the shape of the transfer chamber 320 and the number of the process chambers 50 may be variously changed according to the requirements of the user or the process requirements.

[0049] The load rack chamber 40 may be disposed between the return frame 220 and the transfer chamber 320. The load rack chamber 40 has a buffer space in which the substrate (W) is exchanged between the return frame 220 and the transfer chamber 320. For example, the substrate (W) that has completed a predetermined process in the process chamber 50 may temporarily stay in the buffer space of the load rack chamber 40. In addition, the substrate (W) that has been pulled out of the container (F) and is scheduled to be subjected to a predetermined process may temporarily stay in the buffer space of the load rack chamber 40.

[0050] As described above, the internal atmosphere of the return frame 220 can be maintained at atmospheric pressure, and the internal atmosphere of the transfer chamber 320 can be maintained at vacuum pressure. In addition, the load rack chamber 40 is disposed between the return frame 220 and the transfer chamber 320, and the internal atmosphere thereof can be switched between atmospheric pressure and vacuum pressure.

[0051] The process chamber 50 is connected to the transfer chamber 320. There may be a plurality of process chambers 50. The process chamber 50 may be a chamber for performing a predetermined process on the substrate (W). According to an embodiment, the process chamber 50 may process the substrate (W) using plasma. For example, the process chamber 50 may be a chamber for performing an etching process for removing a thin film on the substrate (W), an ashing process for removing a photoresist film, a deposition process for forming a thin film on the substrate (W), a dry cleaning process, an ALD process (Atomic Layer Deposition) for depositing an atomic layer on the substrate, or an ALE process (Atomic Layer Etching) for etching an atomic layer on the substrate using plasma. However, the plasma processing process performed in the process chamber 50 may be variously modified from known plasma processing processes.

[0052] Figure 2 is a schematic diagram of a process chamber according to an embodiment of Figure 1. Referring to Figure 2, a process chamber 50 according to an embodiment of the present invention can plasma process a substrate (W). The process chamber 50 can include a housing 500, a support unit 600, a gas supply unit 700, a shower head unit 800, and a density control member 900.

[0053] The housing 500 may have a shape with the inside being sealed. The housing 500 has a processing space 501 therein for processing a substrate (W). The processing space 501 may be generally maintained at a vacuum atmosphere while processing the substrate (W). The material of the housing 500 may include metal. According to an embodiment, the material of the housing 500 may include aluminum. The housing 500 may be grounded.

[0054] An entrance (not shown) may be formed in one side wall of the housing 500. The entrance (not shown) functions as a space through which a substrate (W) is loaded into or unloaded from the processing space 501. The entrance (not shown) may be selectively opened and closed by a door assembly (not shown).

[0055] An exhaust hole 530 may be formed at the bottom of the housing 500. The exhaust hole 530 is connected to an exhaust line 540. A pressure reducing member (not shown) may be installed in the exhaust line 540. The pressure reducing member (not shown) may be any one of known pumps that provide negative pressure. The process gas and process impurities supplied to the processing space 501 may be exhausted from the processing space 501 through the exhaust hole 530 and the exhaust line 540 in sequence. In addition, the pressure reducing member (not shown) provides negative pressure, so that the pressure of the processing space 501 may be adjusted.

[0056] An exhaust baffle 550 may be disposed above the exhaust hole 530 to allow the exhaust to be more uniform in the processing space 501. The exhaust baffle 550 may be located between a sidewall of the housing 500 and a support unit 600, which will be described later. The exhaust baffle 550 may have a generally ring shape when viewed from above. At least one baffle hole 552 may be formed in the exhaust baffle 550. The baffle holes 552 may penetrate the upper and lower surfaces of the exhaust baffle 550. Process gases and process impurities in the processing space 501 may flow through the baffle holes 552 to the exhaust hole 530 and the exhaust line 540.

[0057] The support unit 600 is disposed inside the housing 500. The support unit 600 may be disposed within the processing space 501. The support unit 600 may be disposed at a predetermined distance above the bottom surface of the housing 500. The support unit 600 supports a substrate (W). The support unit 600 may include an electrostatic chuck that attracts the substrate (W) using electrostatic force. Alternatively, the support unit 600 may support the substrate (W) using various methods such as vacuum attraction or mechanical clamping. Hereinafter, a support unit 600 including an electrostatic chuck will be described as an example.

[0058] The support unit 600 may include an electrostatic chuck 610 , an insulating plate 650 , and a bottom cover 660 .

[0059] The electrostatic chuck 610 supports a substrate (W). The electrostatic chuck 610 may include a dielectric plate 620 and a base plate 630. The dielectric plate 620 is located at the upper end of the support unit 600. The dielectric plate 620 may be a disk-shaped dielectric substance. The substrate (W) is placed on the upper surface of the dielectric plate 620. According to an embodiment, the upper surface of the dielectric plate 620 may have a smaller radius than the substrate (W). When the substrate (W) is placed on the upper surface of the dielectric plate 620, an edge region of the substrate (W) may be located outside the dielectric plate 620.

[0060] An electrode 621 and a heater 622 are disposed inside the dielectric plate 620. According to an embodiment, the electrode 621 may be located above the heater 622 inside the dielectric plate 620. The electrode 621 is electrically connected to a first power source 621a. The first power source 621a may include a DC power source. A first switch 621b is disposed between the electrode 621 and the first power source 621a. When the first switch 621b is turned on, the electrode 621 is electrically connected to the first power source 621a, and a DC current flows through the electrode 621. An electrostatic force acts between the electrode 621 and the substrate (W) due to the current flowing through the electrode 621. As a result, the substrate (W) is attracted to the dielectric plate 620.

[0061] The heater 622 is electrically connected to the second power source 622a. A second switch 622b is installed between the heater 622 and the second power source 622a. When the second switch 622b is turned on, the heater 622 can be electrically connected to the second power source 622a. The heater 622 can generate heat by resisting a current supplied from the second power source 622a. The heat generated by the heater 622 is transferred to the substrate (W) via the dielectric plate 620. The substrate (W) placed on the dielectric plate 620 can maintain a predetermined temperature by the heat generated by the heater 622. The heater 622 can include a spiral-shaped coil. The heater 622 can also include a plurality of coils. Although not shown, the plurality of coils can be provided in different regions of the dielectric plate 620. For example, a coil for heating the central region of the dielectric plate 620 and a coil for heating the edge region of the dielectric plate 620 may be embedded in the dielectric plate 620, and the heat generation degree between the coils may be independently controlled. In the above example, the heater 622 is located inside the dielectric plate 620, but the present invention is not limited thereto. For example, the heater 622 may not be located inside the dielectric plate 620.

[0062] At least one first flow passage 623 may be formed inside the dielectric plate 620. The first flow passage 623 may be formed from the upper surface of the dielectric plate 620 to the bottom surface of the dielectric plate 620. The first flow passage 623 is connected to a second flow passage 633 described below. When viewed from above, the first flow passages 623 may be formed spaced apart from each other in a central region of the dielectric plate 620 and an edge region surrounding the central region. The first flow passage 623 functions as a passage through which a heat transfer medium described below is supplied to the bottom surface of the substrate (W).

[0063] The base plate 630 is positioned below the dielectric plate 620. The base plate 630 may have a disk shape. The upper surface of the base plate 630 may be formed to have a step such that the central region is higher than the edge region. The central region of the upper portion of the base plate 630 may have an area corresponding to the bottom surface of the dielectric plate 620. The central region of the upper surface of the base plate 630 may be bonded to the bottom surface of the dielectric plate 620. A ring member 640, which will be described later, may be positioned above the edge region of the base plate 630.

[0064] The base plate 630 may include a conductive material. For example, the material of the base plate 630 may include aluminum. The base plate 630 may be a metal plate. For example, the entire area of ​​the base plate 630 may be a metal plate. The base plate 630 may be electrically connected to a third power source 630a. The third power source 630a may be a high frequency power source that generates high frequency power. For example, the high frequency power source may be an RF power source. The RF power source may be a high bias power RF power source. The base plate 630 receives high frequency power from the third power source 630a. Thus, the base plate 630 may function as an electrode that generates an electric field. According to an embodiment, the base plate 630 may function as a lower electrode of a plasma source described below. However, the present invention is not limited thereto, and the base plate 630 may be grounded and function as a lower electrode.

[0065] A first circulation channel 632 and a second circulation channel 634 may be located inside the base plate 630. Also, a second channel 633 may be formed inside the base plate 630.

[0066] The first circulation channel 632 may be a passage through which the heat transfer medium circulates. The first circulation channel 632 may have a spiral shape. The first circulation channel 632 is in fluid communication with a second channel 633, which will be described later. The first circulation channel 632 is also connected to a first supply source 632a through a first supply line 632c.

[0067] The first supply source 632a stores a heat transfer medium. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. However, the heat transfer medium is not limited thereto and may include various types of gases or liquids. The heat transfer medium may be a fluid supplied to the lower surface of the substrate (W) to eliminate temperature non-uniformity of the substrate (W) during plasma processing of the substrate (W). In addition, the heat transfer medium may act as a medium for transferring heat transferred from the plasma to the substrate (W) from the substrate (W) to the dielectric plate 620 and the ring member 640 described below during plasma processing of the substrate (W).

[0068] A first valve 632b is installed on the first supply line 632c. The first valve 632b may be an on-off valve. The heat transfer medium may be selectively supplied to the first circulation channel 632 by opening and closing the first valve 632b.

[0069] The second flow passage 633 fluidly connects the first circulation flow passage 632 and the first flow passage 623. The heat transfer medium supplied to the first circulation flow passage 632 can be supplied to the bottom surface of the substrate (W) through the second flow passage 633 and the first flow passage 623 in sequence.

[0070] The second circulation channel 634 may be a passage through which the cooling fluid circulates. The second circulation channel 634 may have a spiral shape. Also, the second circulation channel 634 may be arranged such that ring-shaped channels having different radii share the same center. The second circulation channel 634 is connected to a second supply source 634a through a second supply line 634c.

[0071] The second supply source 634a stores a cooling fluid. For example, the cooling fluid may be cooling water. The second supply source 634a may be provided with a chiller (not shown). The chiller (not shown) can cool the cooling fluid to a predetermined temperature. However, unlike the above example, the chiller (not shown) may be installed in the second supply line 634c. A second valve 634b is installed on the second supply line 634c. The second valve 634b may be an on-off valve. By opening and closing the second valve 634b, the cooling fluid may be selectively supplied to the second circulation channel 634. The cooling fluid is supplied to the second circulation channel 634 through the second supply line 634c. The cooling fluid flowing through the second circulation channel 634 may cool the base plate 630. The substrate (W) may be cooled together with the base plate 630.

[0072] The ring member 640 is disposed at an edge region of the electrostatic chuck 610. According to an example, the ring member 640 can be a focus ring. The ring member 640 has a ring shape. The ring member 640 is disposed along the circumference of the dielectric plate 620. For example, the ring member 640 can be disposed above the edge region of the base plate 630.

[0073] The upper surface of the ring member 640 may be formed to have a step. According to an embodiment, the inner part of the upper surface of the ring member 640 may be located at the same height as the upper surface of the dielectric plate 620. Also, the inner part of the upper surface of the ring member 640 may support the lower surface of the edge region of the substrate (W) positioned outside the dielectric plate 620. The outer part of the upper surface of the ring member 640 may surround the side of the edge region of the substrate (W).

[0074] The insulating plate 650 is disposed below the base plate 630. The insulating plate 650 may include an insulating material. The insulating plate 650 electrically insulates the base plate 630 from a lower cover 660, which will be described later. The insulating plate 650 may have a generally disk-like shape when viewed from above. The insulating plate 650 may have an area corresponding to that of the base plate 630.

[0075] The lower cover 660 is positioned below the insulating plate 650. When viewed from above, the lower cover 660 may have a cylindrical shape with an open top. The top of the lower cover 660 may be covered by the insulating plate 650. A lift pin assembly 670 for raising and lowering the substrate (W) may be positioned in the internal space of the lower cover 660.

[0076] The lower cover 660 may include a plurality of connecting members 662. The connecting members 662 may connect an outer surface of the lower cover 660 and an inner wall of the housing 500 to each other. The connecting members 662 may be disposed spaced apart along a circumferential direction of the lower cover 660. The connecting members 662 support the support unit 600 inside the housing 500. In addition, the connecting members 662 may be connected to the grounded housing 500 to ground the lower cover 660.

[0077] The connecting member 662 may have a hollow shape having a space therein. A first power supply line 621c connected to the first power supply 621a, a second power supply line 622c connected to the second power supply 622a, a third power supply line 630c connected to the third power supply 630a, a first supply line 632c connected to the first circulation flow path 632, and a second supply line 634c connected to the second circulation flow path 634 are extended to the outside of the housing 500 through the space formed inside the connecting member 662.

[0078] The gas supply unit 700 supplies a process gas to the processing space 501. The gas supply unit 700 may include a gas supply nozzle 710, a gas supply line 720, and a gas supply source 730.

[0079] The gas supply nozzle 710 may be installed in a central region of an upper surface of the housing 500. An injection hole is formed on a bottom surface of the gas supply nozzle 710. The injection hole (not shown) may inject a process gas into the housing 500.

[0080] One end of the gas supply line 720 is connected to the gas supply nozzle 710. The other end of the gas supply line 720 is connected to a gas supply source 730. The gas supply source 730 may store a process gas. The process gas may be a gas that is excited into a plasma state by a plasma source, which will be described later. According to an embodiment, the process gas may include NH3, NF3, and / or an inert gas.

[0081] A gas valve 740 is installed on the gas supply line 720. The gas valve 740 may be an on-off valve. By opening and closing the gas valve 740, a process gas may be selectively supplied to the processing space 501.

[0082] The plasma source excites the process gas supplied into the housing 500 into a plasma state. In the plasma source according to an embodiment of the present invention, a capacitively coupled plasma (CCP) is used. However, without being limited thereto, the process gas supplied into the processing space 501 can be excited into a plasma state using an inductively coupled plasma (ICP) or a microwave plasma. Hereinafter, an example in which a capacitively coupled plasma (CCP) is used in the plasma source according to an embodiment will be described.

[0083] The plasma source may include an upper electrode and a lower electrode. The upper electrode and the lower electrode may be disposed facing each other inside the housing 500. One of the two electrodes may be applied with high frequency power, and the other may be grounded. Alternatively, both electrodes may be applied with high frequency power. An electric field is formed in the space between the two electrodes, and a process gas supplied to this space may be excited into a plasma state. A substrate processing process is performed using the plasma. According to an embodiment, the upper electrode may be the electrode plate 830 described below, and the lower electrode may be the base plate 630 described above.

[0084] The showerhead unit 800 is located above the support unit 600 inside the housing 500. The showerhead unit 800 may include a shower plate 810, an electrode plate 830, and a support portion 850.

[0085] The shower plate 810 is positioned on the upper side of the support unit 600 to face the support unit 600. The shower plate 810 may be positioned to be spaced downward from a ceiling surface of the housing 500. According to an embodiment, the shower plate 810 may have a disk shape with a uniform thickness. The shower plate 810 may be an insulator. The shower plate 810 has a plurality of through holes 812 formed therein.

[0086] The through hole 812 may penetrate the upper and lower surfaces of the shower plate 810. The through hole 812 is positioned to face a hole 832 formed in an electrode plate 830, which will be described later. Also, the through hole 812 may be positioned to overlap a space between dielectric pads 920 and 940, which will be described later, when viewed from above.

[0087] The electrode plate 830 is disposed above the shower plate 810. The electrode plate 830 may be disposed below the ceiling surface of the housing 500 at a predetermined distance. A space may be formed between the electrode plate 830 and the ceiling surface of the housing 500. The electrode plate 830 may have a disk shape with a uniform thickness. The material of the electrode plate 830 may include metal. The electrode plate 830 may be grounded. However, as described above, the electrode plate 830 may be electrically connected to a high frequency power source (not shown). The bottom surface of the electrode plate 830 may be anodized to minimize arc generation due to plasma. The cross section of the electrode plate 830 may be formed to have the same shape and cross-sectional area as the support unit 600.

[0088] A plurality of holes 832 are formed in the electrode plate 830. The holes 832 vertically penetrate the upper and lower surfaces of the electrode plate 830. Each of the holes 832 corresponds to a plurality of through holes 812 formed in the shower plate 810. Also, the holes 832 may be positioned to overlap a space between dielectric pads 920 and 940, which will be described later, when viewed from above. Thus, the process gas sprayed from the gas supply nozzle 710 flows into the space formed by the combination of the electrode plate 830 and the housing 500. The process gas may be supplied from the space to the processing space 501 through the holes 832 and the through holes 812.

[0089] The support 850 supports a side of the shower plate 810 and a side of the electrode plate 830. An upper end of the support 850 is connected to a ceiling surface of the housing 500, and a lower portion of the support 850 is connected to a side of the shower plate 810 and a side of the electrode plate 830. The material of the support 850 may include a non-metal.

[0090] 3 is a diagram showing a schematic top view of the density adjusting member according to the embodiment of FIG. 2. Hereinafter, the density adjusting member according to the embodiment of the present invention will be described in detail with reference to FIGS.

[0091] The density adjusting member 900 is located inside the housing 500. The density adjusting member 900 may be located on an upper side of the shower plate 810. The density adjusting member 900 may be disposed between the shower plate 810 and the electrode plate 830. According to an embodiment, the density adjusting member 900 may be adhesively fixed to an upper surface of the shower plate 810. The density adjusting member 900 can adjust the density of the plasma generated in the processing space 501 by changing the dielectric constant. Specifically, the density adjusting member 900 can change the density of the electric field generated in the processing space 501 by the plasma source described above by changing the dielectric constant. By changing the electric field in the processing space 501, the degree to which the process gas supplied to the processing space 501 is excited by the electric field can be changed. Thus, the density of the plasma generated in the processing space 501 can be adjusted.

[0092] The density adjusting member 900 may include at least one dielectric pad. The dielectric pad may be a dielectric substance having a pad shape of a certain thickness. For example, the material of the dielectric pad may include aluminum oxide. Also, the material of the dielectric pad may include a metal oxide material having a higher dielectric constant than aluminum oxide. Alternatively, the dielectric pad may be formed by mixing aluminum oxide and a metal oxide material having a higher dielectric constant than aluminum oxide. For example, the dielectric pad may be formed to have various dielectric constants by varying the mixing ratio of aluminum oxide and metal oxide material.

[0093] According to an embodiment, the density adjusting member 900 may include a center pad 920 and an edge pad 940. The center pad 920 may have a generally circular shape when viewed from above. The center of the center pad 920 may coincide with the center of the shower plate 810 when viewed from above. The center pad 920 may be located in a center region (hereinafter, center region) including the center of the shower plate 810. That is, the center region may have a circular shape. According to an embodiment, a lower surface of the center pad 920 may be attached to an upper surface of the shower plate 810. As shown in FIG. 3, the center pad 920 may be disposed at a position not overlapping with the through-holes 812 formed in the shower plate 810 when viewed from above. The center pad 920 may have a first dielectric constant.

[0094] The edge pad 940 may have a ring shape. The edge pad 940 may share a center with the shower plate 810. The edge pad 940 may be located in an edge region (hereinafter, edge region) of the shower plate 810 surrounding the center region. That is, the edge region may be ring-shaped. The edge region is spaced apart from the center region by a certain distance. Thus, the edge pad 940 may be located at a certain distance from the center pad 920. A through hole 812 may be located in a space formed by the edge pad 940 and the center pad 920 being spaced apart from each other. According to an embodiment, an outer surface of the edge pad 940 may be located at a position spaced apart from the outer surface of the shower plate 810 by a certain distance in a direction toward the center of the shower plate 810. When viewed from above, a through hole 812 may be located in a space between the outer surface of the edge pad 940 and the outer surface of the shower plate 810. That is, the through hole 812 and the edge pad 940 may not overlap each other when viewed from above.

[0095] According to an embodiment, the lower surface of the edge pad 940 may be attached to the upper surface of the shower plate 810. The edge pad 940 may have a second dielectric constant. According to an embodiment, the second dielectric constant may be relatively lower than the first dielectric constant. For example, the center pad 920 may be made of a material including aluminum oxide, and the edge pad 940 may be made of a metal oxide material having a higher dielectric constant than aluminum oxide. However, the present invention is not limited thereto, and the dielectric constant of the center pad 920 and the dielectric constant of the edge pad 940 may be different by changing the mixing ratio of the aluminum oxide and the metal oxide material.

[0096] FIG. 4 is a schematic diagram showing how plasma is generated in a processing space by the density adjusting member of FIG.

[0097] Referring to FIG. 4, a first plasma (P1) is generated in the central region of the processing space 501 corresponding to the region where the center pad 920 is located, and a second plasma (P2) is generated in the edge region of the processing space 501 corresponding to the region where the edge pad 940 is located.

[0098] As described above, the center pad 920 may have a first dielectric constant, and the edge pad 940 may have a second dielectric constant lower than the first dielectric constant. The center pad 920 may have a relatively higher dielectric constant than the edge pad 940. The higher the dielectric constant, the more the electric field generated around the dielectric is canceled by the electric dipole moment formed inside the dielectric. That is, the higher the dielectric constant of the dielectric, the more the electric field can be shielded by the dielectric. In addition, the density of the electric field generated in the central region of the processing space 501 corresponding to the region where the center pad 920 is located may be relatively lower than the density of the electric field generated in the edge region of the processing space 501 corresponding to the region where the edge pad 940 is located. As a result, the first plasma (P1) may have a relatively lower density or intensity than the second plasma (P2).

[0099] Generally, in an apparatus that generates plasma using the CCP or ICP method, a thin film formed in the center region of a substrate is etched relatively more than a thin film formed in the edge region of the substrate. Such a difference in etching rate between regions of a substrate occurs due to various factors such as the air flow in the processing space, the uniformity of the supply of process gas in the processing space, the supply position of the process gas, and the uniformity of plasma in the processing space.

[0100] In accordance with one embodiment of the present invention, the center pad 920 having a relatively high dielectric constant is disposed on the upper side corresponding to the central region including the center of the substrate W having a relatively high etching rate, thereby minimizing the difference in etching rate between the central region of the substrate W and the edge region of the substrate W. As a result, when the substrate W is subjected to plasma processing, the processing uniformity for the substrate W can be efficiently maintained.

[0101] In the above embodiment of the present invention, the first dielectric constant is larger than the second dielectric constant, but the present invention is not limited thereto. The first dielectric constant may be smaller than the second dielectric constant. Also, the first dielectric constant may be equal to the second dielectric constant. That is, it is possible to vary the dielectric constant of the dielectric pad in various ways to make the density of the electric field in the processing space 501 different in different regions of the processing space 501.

[0102] Hereinafter, a density adjusting member according to another embodiment of the present invention will be described in detail. The density adjusting member described below has the same or similar configuration as the density adjusting member described above, except for additional explanations, and therefore the explanation of the overlapping configuration will be omitted.

[0103] FIG. 5 is a diagram showing a schematic top view of a density adjusting member according to another embodiment of FIG.

[0104] 5, according to an embodiment, there may be a plurality of center pads 920. For example, the center pads 920 may include a first center pad 921, a second center pad 922, a third center pad 923, and a fourth center pad 924.

[0105] The first center pad 921, the second center pad 922, the third center pad 923, and the fourth center pad 924 may have a generally circular shape when viewed from above when combined with each other. Each of the center pads 921, 922, 923, and 924 may have the same shape as each other. Also, each of the center pads 921, 922, 923, and 924 may have the same cross-sectional area as each other.

[0106] However, the present invention is not limited thereto, and each of the center pads 921, 922, 923, and 924 may have different shapes and cross-sectional areas. Also, the number of center pads 921, 922, 923, and 924 shown in FIG. 5 is only four for the sake of convenience, and the number of center pads 920 according to one embodiment may be two, three, or five or more.

[0107] The first center pad 921, the second center pad 922, the third center pad 923, and the fourth center pad 924 may be disposed at a certain distance from each other. A through hole 812 may be disposed in the space between the center pads 921, 922, 923, and 924. The center pads 921, 922, 923, and 924 may have different dielectric constants. Alternatively, some of the center pads 921, 922, 923, and 924 may have the same dielectric constant, and other parts may have different dielectric constants. Alternatively, the center pads 921, 922, 923, and 924 may have the same dielectric constant.

[0108] According to an embodiment, there may be a plurality of edge pads 940. For example, the edge pads 940 may include first to eighth edge pads 941 to 948.

[0109] Each edge pad 941-948 may be combined with each other to have a generally ring shape when viewed from above. Each edge pad 941-948 may have the same shape and cross-sectional area as each other. For example, each edge pad 941-948 may have a generally fan shape when viewed from above. However, this is not limited thereto, and each edge pad 941-948 may have a different shape and cross-sectional area from each other. Unlike as shown in FIG. 5, the number of edge pads may be variously changed according to process requirements or user requirements.

[0110] The edge pads 941-948 may be spaced apart from each other by a fixed distance. A through hole 812 may be located in the space between the edge pads 941-948. The edge pads 941-948 may have different dielectric constants. Alternatively, some of the edge pads 941-948 may have the same dielectric constant, and other parts may have different dielectric constants. Alternatively, the edge pads 941-948 may have the same dielectric constant.

[0111] Figure 6 is a diagram showing a schematic view of a substrate as viewed from above. The entire area of ​​the substrate (W) shown in Figure 6 can be divided into a central area including the center of the substrate (W) and an edge area surrounding the central area of ​​the substrate (W). The central area of ​​the substrate (W) includes a first central area (A1), a second central area (A2), a third central area (A3), and a fourth central area (A4). The edge area of ​​the substrate (W) can include a first edge area to an eighth edge area (B1 to B8).

[0112] The first central area (A1) overlaps with the area where the first center pad 921 is located when viewed from above. Also, the second central area (A2) overlaps with the area where the second center pad 922 is located when viewed from above. Also, the third central area (A3) overlaps with the area where the third center pad 923 is located when viewed from above. Also, the fourth central area (A4) overlaps with the area where the fourth center pad 924 is located when viewed from above.

[0113] When viewed from above, the first edge region (B1) overlaps with the region where the first edge pad 941 is located. In addition, the second edge region (B2) overlaps with the region where the second edge pad 942 is located, the third edge region (B3) overlaps with the region where the third edge pad 943 is located, the fourth edge region (B4) overlaps with the region where the fourth edge pad 944 is located, the fifth edge region (B5) overlaps with the region where the fifth edge pad 945 is located, the sixth edge region (B6) overlaps with the region where the sixth edge pad 946 is located, the seventh edge region (B7) overlaps with the region where the seventh edge pad 947 is located, and the eighth edge region (B8) overlaps with the region where the eighth edge pad 948 is located, when viewed from above.

[0114] For example, assuming that the first center pad 921 has a first dielectric constant, the second center pad 922 has a second dielectric constant, the third center pad 923 has a third dielectric constant, and the fourth center pad 924 has a fourth dielectric constant, and the first dielectric constant is greater than the second, third, and fourth dielectric constants, and the second dielectric constant is greater than the third and fourth dielectric constants, and the third dielectric constant is greater than the fourth dielectric constant, the etching rate of the first central region (A1) may be less than that of the second central region (A2). Also, the etching rate of the second central region (A3) may be less than that of the third central region (A3). Also, the etching rate of the third central region (A3) may be less than that of the fourth central region (A4). This mechanism is the same or similar for the first to eighth edge regions.

[0115] According to the embodiment of the present invention described above, a plurality of center pads 920 and edge pads 940 are disposed on the shower plate 810 to finely divide the processing space 501, thereby enabling more precise control of the density of the electric field generated in each region of the processing space 501. This allows more precise control of the etching rate in each region of the substrate (W).

[0116] 7 is a diagram showing a schematic view of a modified embodiment of the density adjusting member of FIG 5. Referring to FIG 7, the edge pads 940 may not be arranged in a plurality of pieces in the edge region of the shower plate 810. That is, the edge pads 940 according to one embodiment may have a continuous ring shape. Conversely, the edge pads 940 may be arranged in a plurality of pieces in the edge region of the shower plate 810, and the center pad 920 may have a circular shape and be arranged in the center region of the shower plate 810.

[0117] FIG. 8 is a diagram showing a schematic top view of a density adjusting member according to another embodiment of FIG.

[0118] 8, the density adjusting member 900 may include a center pad 920, a middle pad 930, and an edge pad 940. The structure of the center pad 920 is almost the same as or similar to the structure of the center pad 920 according to the embodiment of the present invention described above, and therefore a description thereof will be omitted.

[0119] The middle pad 930 may have a generally ring shape when viewed from above. The middle pad 930 may share a center with the shower plate 810. The middle pad 930 may be located in a middle region (hereinafter, referred to as middle region) of the shower plate 810 surrounding the center region. That is, the middle region may be ring shaped. The middle region is spaced a certain distance from the center region. In addition, the middle pad 930 may be located to be spaced a certain distance from the center pad 920. A through hole 812 may be located in the space formed by the middle pad 930 and the center pad 920 being spaced from each other.

[0120] According to an embodiment, a lower surface of the middle pad 930 may be attached to an upper surface of the shower plate 810. The middle pad 930 may have a second dielectric constant. According to an embodiment, the second dielectric constant may be relatively lower than the first dielectric constant.

[0121] The edge pad 940 may be located in an edge region (hereinafter, edge region) of the shower plate 810 surrounding the middle region. That is, the edge region may be ring-shaped. The edge region is spaced apart from the middle region by a certain distance. A through hole 812 may be located in a space between the edge pad 940 and the middle pad 930. The edge pad 940 may have a third dielectric constant. The third dielectric constant may be relatively lower than the second dielectric constant.

[0122] FIG. 9 is a schematic diagram showing how plasma is generated in a processing space by the density adjusting member of FIG.

[0123] Referring to FIG. 9, a first plasma (P1) is generated in the central region of the processing space 501 corresponding to the region where the center pad 920 is located, a second plasma (P2) is generated in the middle region of the processing space 501 corresponding to the region where the middle pad 930 is located, and a third plasma (P3) is generated in the edge region of the processing space 501 corresponding to the region where the edge pad 940 is located.

[0124] As described above, the center pad 920 may have a higher dielectric constant than the middle pad 930 and the edge pad 940. Also, the middle pad 930 may have a higher dielectric constant than the edge pad 940. In addition, the density of the electric field generated in the central region of the processing space 501 corresponding to the region where the center pad 920 is located may be lower than the density of the electric field generated in the region of the processing space 501 corresponding to the region where the middle pad 930 and the edge pad 940 are located. Also, the density of the electric field generated in the intermediate region of the processing space 501 corresponding to the region where the middle pad 930 is located may be lower than the density of the electric field generated in the edge region of the processing space 501 corresponding to the region where the edge pad 940 is located. That is, when viewed from above, the density of the electric field may increase from the central region including the center of the processing space 501 to the edge region of the processing space 501. As a result, the first plasma (P1) may have a relatively lower density or intensity than the second plasma (P2), and the second plasma (P2) may have a relatively lower density or intensity than the third plasma (P3).

[0125] In general, the etching rate of the edge region of the substrate is relatively lower than the etching rate of the central region of the substrate. According to an embodiment of the present invention, the density (or strength) of the plasma generated in each region of the processing space 501 is adjusted differently, so that the plasma of uniform strength can be applied to the entire region of the substrate (W). Thus, when the substrate (W) is subjected to plasma processing, the processing uniformity of the substrate (W) can be efficiently maintained. In particular, according to the embodiment of the present invention described above, the region in which the pads having different dielectric constants are arranged is further subdivided, so that the density (or strength) of the electric field generated in the processing space 501 can be changed more variably in each region of the processing space 501, so that the etching rate can be more uniformly adjusted in each region of the substrate (W).

[0126] FIG. 10 is a diagram showing a schematic view of a modified embodiment of the density adjusting member of FIG.

[0127] 10, according to an embodiment, there may be a plurality of middle pads 930. For example, the middle pad 930 may include first to eighth middle pads 931 to 938.

[0128] Each of the middle pads 931-938 may be combined with each other to have a generally ring shape when viewed from above. Each of the middle pads 931-938 may have the same shape and cross-sectional area as each other. For example, each of the middle pads 931-938 may have a generally fan shape when viewed from above. However, this is not limited thereto, and each of the middle pads 931-938 may have a different shape and cross-sectional area from each other. Unlike as shown in FIG. 5, the number of middle pads may be variously changed according to process requirements or user requirements.

[0129] The above detailed description is illustrative of the present invention. The above content shows and describes a preferred embodiment of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed in the present specification, the scope of equivalents to the disclosed content, and / or the scope of the technology or knowledge of the art. The described embodiments are intended to explain the best conditions for embodying the technical ideas of the present invention, and various modifications are possible as required by specific application fields and uses of the present invention. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiment. The appended claims should be construed to include other embodiments. [Explanation of symbols]

[0130] 10 Loading Port 20 Atmospheric Pressure Transfer Module 30 Vacuum Transfer Module 40 Load Rack Chamber 50 Process Chamber 500 Housing 600 Support Unit 700 Gas Supply Unit 800 shower head unit 812 Through Hole 900 Density adjustment material 920 Center Pad 930 Middle Pad 940 Edge Pad

Claims

1. A substrate processing apparatus for processing a substrate, a housing having a processing space for processing the substrate; a supporting unit for supporting the substrate in the processing space; a shower plate having through holes for allowing a process gas to flow into the processing space; a plasma source for exciting the process gas supplied to the processing space to generate plasma; a density adjusting member for adjusting the density of the plasma generated in the processing space by changing the dielectric constant, the density adjusting member is located on the shower plate, the plasma source includes an electrode plate positioned above the shower plate; the density adjusting member is disposed between the shower plate and the electrode plate, the shower plate includes an insulator, the electrode plate is an upper electrode; the density adjusting member includes a plurality of dielectric pads; The plurality of dielectric pads have different dielectric constants and are spaced apart from each other.

2. The substrate processing apparatus of claim 1 , wherein the through-hole is located in a space between each of the plurality of dielectric pads that are spaced apart from each other.

3. The dielectric pads include a center pad and an edge pad; the center pad has a first dielectric constant and is located in a circular center region including a center of the shower plate, The substrate processing apparatus of claim 2 , wherein the edge pad has a second dielectric constant and is located in a ring-shaped edge region surrounding the center region.

4. The substrate processing apparatus of claim 3 , wherein the first dielectric constant is greater than the second dielectric constant.

5. The substrate processing apparatus according to claim 3 , wherein the first dielectric constant is smaller than the second dielectric constant.

6. the dielectric pad includes a plurality of the center pads and a plurality of the edge pads, the plurality of center pads are disposed to be spaced apart from one another in the center region, The substrate processing apparatus of claim 3 , wherein the edge pads are spaced apart from one another in the edge region.

7. Each of the plurality of center pads has a different dielectric constant from each other, The substrate processing apparatus of claim 6 , wherein each of the edge pads has a different dielectric constant from each other.

8. 3. The substrate processing apparatus of claim 2, wherein the dielectric pad is located in at least one of a center region including a center of the shower plate, a middle region surrounding the center region, and an edge region surrounding the middle region.

9. The substrate processing apparatus according to claim 1 , wherein the density adjusting member is adhered to an upper surface of the shower plate.

10. 10. The substrate processing apparatus according to claim 1, wherein the electrode plate is grounded or has high-frequency power applied thereto.

11. A substrate processing apparatus for processing a substrate, a housing defining a processing space for processing the substrate; a supporting unit for supporting the substrate in the processing space; a gas supply unit for supplying a process gas; a shower plate having through holes for allowing the process gas to flow into the processing space; a plasma source for generating an electric field in the processing space to excite the process gas supplied to the processing space; a density adjusting member for blocking an electric field generated in the processing space and adjusting a density of plasma generated by exciting the process gas to be different in each region of the processing space, the plasma source includes an electrode plate positioned above the shower plate; the density adjusting member is disposed between the shower plate and the electrode plate, the shower plate includes an insulator, the electrode plate is an upper electrode; The density adjusting member includes at least one dielectric pad, The dielectric pad comprises: When viewed from above, an electric field generated in at least one of a center region including a center of the processing space, a middle region surrounding the center region, and an edge region surrounding the middle region is shielded; the dielectric pads include a center pad, a middle pad, and an edge pad; the center pad has a first dielectric constant and shields an electric field in the center region; the middle pad has a second dielectric constant to shield an electric field in the middle region; the edge pad having a third dielectric constant to shield an electric field in the edge region; A plurality of the center pads are arranged in the center region, A plurality of the middle pads are disposed in the middle region, A plurality of the edge pads are disposed in the edge region; The substrate processing apparatus, wherein each of the center pads, each of the middle pads, and each of the edge pads have a different dielectric constant from each other.

12. The substrate processing apparatus of claim 11 , wherein the first dielectric constant, the second dielectric constant, and the third dielectric constant are different from each other.

13. the first dielectric constant is greater than the second dielectric constant and the third dielectric constant; The substrate processing apparatus of claim 12 , wherein the second dielectric constant is greater than the third dielectric constant.

14. A substrate processing apparatus for processing a substrate, a housing having a processing space for processing the substrate; a supporting unit for supporting the substrate in the processing space; a gas supply unit for supplying a process gas; a shower plate having through holes formed therein for injecting the process gas into the processing space; an electrode plate disposed above the shower plate and grounded or to which high frequency power is applied; a lower electrode disposed inside the support unit and grounded or to which high frequency power is applied; a density adjusting member positioned between the shower plate and the electrode plate, for blocking an electric field generated in the processing space by the electrode plate and the lower electrode, and adjusting a density of plasma generated in the processing space, the density adjusting member includes a plurality of dielectric pads; the dielectric pads each have a different dielectric constant and are spaced apart from an upper side of the shower plate; The through-hole is located in a space between each of the plurality of dielectric pads that are spaced apart from each other.

15. The dielectric pad includes at least one center pad and at least one edge pad; the center pad has a first dielectric constant and is located in a circular center region including a center of the shower plate, the edge pad has a second dielectric constant and is located in a ring-shaped edge region surrounding the center region; The substrate processing apparatus of claim 14 , wherein the first dielectric constant is greater than the second dielectric constant.

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