Method for processing single crystal silicon wafer

Abstract

To provide a wafer processing method capable of shortening processing time and reducing the probability of device breakage when a peeling layer is formed inside a wafer and then the wafer is separated with the peeling layer as a separation starting point.SOLUTION: A single crystal silicon wafer manufactured so that a specific crystal plane included in a crystal plane {100} (for example, crystal plane (100)) is exposed on each of the front and back surfaces of the wafer is irradiated with a laser beam along a first direction that is parallel to the specific crystal plane and forms an angle of 5° or less with respect to a specific crystal orientation included in a crystal orientation<100>(for example, crystal orientation [010]), thereby forming a peeling layer serving as a separation starting point between the front surface side and back surface side of the single crystal silicon wafer.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a method for processing a single crystal silicon wafer, which comprises forming a peeling layer inside a single crystal silicon wafer and then separating the single crystal silicon wafer from the peeling layer as a separation starting point. [Background technology]

[0002] Chips of semiconductor devices (hereinafter simply referred to as "devices") are generally manufactured using disk-shaped single crystal silicon wafers (hereinafter simply referred to as "wafers"). Specifically, this wafer is partitioned into a plurality of regions by dividing lines set in a lattice pattern, and devices are formed on the front surface side of each region. Then, chips are manufactured by dividing this wafer along the dividing lines.

[0003] Furthermore, a through-silicon via (TSV) may be provided on the wafer for the purpose of increasing the integration density of a package including multiple chips. In this package, for example, electrodes included in different chips can be electrically connected via the TSV.

[0004] For example, TSVs are provided on a wafer in the following order: First, grooves are formed on the front side of the wafer. Then, TSVs are provided in the grooves. Then, the front side of the wafer is bonded to a support wafer. Then, the back side of the wafer is ground until the TSVs are exposed on the back side of the wafer.

[0005] Here, in the case of a wafer, the outer circumferential region is often chamfered for the purpose of preventing cracks, etc. When the back side of a wafer with a chamfered outer circumferential region is ground until the thickness of the wafer is reduced to half or less, the back side of the outer circumferential region takes on a knife-edge shape.

[0006] In this case, stress may be concentrated on the back side of the outer peripheral region during grinding of the wafer, making the wafer more likely to crack, and the yield of chips obtained from the wafer may decrease. Therefore, it has been proposed to remove a part of the front side of the outer peripheral region (so-called edge trimming) prior to grinding the back side of the wafer (see, for example, Patent Document 1).

[0007] As a result, when the remaining portion on the back side of the outer peripheral region is removed by grinding, the side surface of the wafer becomes approximately perpendicular to the front and back sides. Therefore, stress concentration does not occur on the back side of the outer peripheral region during grinding of the wafer, and the wafer is less likely to crack. As a result, a decrease in chip yield can be suppressed.

[0008] However, when grinding the back side of the wafer until the TSVs are exposed on the back side of the wafer after edge trimming, the amount of wafer ground is large, and the amount of wear of the grindstone required to grind the wafer is large, which may increase the cost of the chip or package manufactured using the wafer and may prolong the processing time.

[0009] In view of this, a method has been proposed in which a focal point is formed that is positioned inside the wafer, and a laser beam having a wavelength that passes through the wafer is irradiated onto the wafer to form a peeling layer inside the wafer, and then the wafer is separated using this peeling layer as the separation starting point (see, for example, Patent Document 2).

[0010] In this method, a laser beam is first irradiated onto a first annular region of the wafer (specifically, an annular region inside the chamfered outer peripheral region) where diffuse reflection does not occur when the laser beam is irradiated, thereby forming a peeling layer (cylindrical peeling layer) that serves as a separation starting point between the region where the devices are formed and the outer peripheral region of the wafer.

[0011] Next, the laser beam is irradiated to a second region of the wafer where diffuse reflection does not occur when the laser beam is irradiated (specifically, a circular region inside the chamfered outer peripheral region), thereby forming a peeling layer (disk-shaped peeling layer) that serves as the starting point for separation between the front side and back side of the wafer.

[0012] Next, an external force is applied to the wafer to separate it at the cylindrical separation layer and the disk-shaped separation layer, i.e., the peripheral region of the wafer is separated from the region in which devices are formed, and the back side of the wafer is separated from the front side.

[0013] When the wafer is separated in this manner, the amount of grinding required to expose the TSVs on the back surface of the wafer can be reduced, and the amount of wear of the grindstone required to grind the wafer can be reduced, which can suppress an increase in the cost of the chips or packages manufactured using the wafer, and can also shorten the time required to grind the wafer. [Prior art documents] [Patent documents]

[0014] [Patent Document 1] JP 2007-158239 A [Patent Document 2] JP 2020-136442 A Summary of the Invention [Problem to be solved by the invention]

[0015] The above-mentioned peeling layer is composed of a modified region where the crystal structure of the single crystal silicon constituting the wafer is disturbed, and a crack extending from the modified region. Specifically, when the above-mentioned laser beam is irradiated onto the wafer, a modified region is formed inside the wafer with the focal point of the laser beam as the center. Furthermore, a crack extends from the modified region along a predetermined crystal plane of the single crystal silicon constituting the wafer.

[0016] Generally, single crystal silicon is most easily cleaved along a specific crystal plane included in the crystal plane {111}. For example, for a wafer manufactured so that a specific crystal plane included in the crystal plane {100} (e.g., crystal plane (100)) is exposed on each of the front and back surfaces, <110> When a laser beam is irradiated along a crystal orientation (e.g., crystal orientation

[0011] ) parallel to a specific crystal plane exposed on each of the front and back surfaces of the wafer among the specific crystal orientations included in the crystal plane {111}, many cracks are generated that extend from the modified region along a specific crystal plane (e.g., crystal plane (111)) included in the crystal plane {111}.

[0017] The acute angle formed by a specific crystal plane included in the crystal plane {100} of single crystal silicon (e.g., crystal plane (100)) and a specific crystal plane included in the crystal plane {111} (e.g., crystal plane (111)) is about 54.7°. Therefore, when a laser beam is irradiated onto a wafer as described above, many cracks are generated that extend from the modified region in a direction inclined at about 54.7° with respect to the front or back surface of the wafer.

[0018] In other words, when the direction in which such a crack extends is decomposed into a component parallel to the front and back surfaces of the wafer (parallel component) and a component perpendicular to the front and back surfaces of the wafer (perpendicular component), the perpendicular component is larger than the parallel component. Therefore, when a peeling layer (disc-shaped peeling layer) that serves as a separation starting point between the front and back surfaces of the wafer is formed by irradiating the wafer with a laser beam as described above, the following problems may occur.

[0019] First, in this case, since the parallel component of the direction in which the crack extends is relatively small, the interval between adjacent modified regions needs to be narrowed in order to connect the adjacent modified regions through the crack. In addition, when narrowing the interval between adjacent modified regions, the processing time (laser beam irradiation time) required to form a disk-shaped peeling layer needs to be extended.

[0020] In this case, since the perpendicular component of the direction in which the crack propagates is relatively large, the crack may propagate from the disk-shaped peeling layer toward the front surface of the wafer, causing damage to the device. Although the probability of device damage can be reduced by forming the disk-shaped peeling layer at a position sufficiently separated from the front surface of the wafer, this increases the amount of grinding required when grinding the wafer thereafter.

[0021] In view of the above, an object of the present invention is to provide a wafer processing method that can shorten the processing time when forming a delamination layer inside a wafer and then separating the wafer using this delamination layer as a separation starting point, and can reduce the probability of device damage. [Means for solving the problem]

[0022] According to the present invention, a single crystal silicon wafer is manufactured so that a specific crystal plane included in the crystal plane {100} is exposed on each of the front and back surfaces, and a plurality of devices are formed on the front surface side and a peripheral region is chamfered. A laser beam having a wavelength that transmits single crystal silicon is irradiated to the single crystal silicon wafer so that a focused point formed is positioned inside the single crystal silicon wafer, and a peeled layer is formed inside the single crystal silicon wafer, and then the single crystal silicon wafer is separated from the single crystal silicon wafer using the peeled layer as a separation starting point. The method includes a bonding step of bonding the front surface side of the single crystal silicon wafer to the front surface side of a support wafer, and a bonding step of irradiating the laser beam from the back surface side of the single crystal silicon wafer to an annular first region inside the peripheral region of the single crystal silicon wafer. a first peeling layer forming step of forming a first peeling layer serving as a separation starting point between a region of the single crystal silicon wafer in which the plurality of devices are formed and the outer circumferential region; a second peeling layer forming step of forming a second peeling layer serving as a separation starting point between the front side and the back side of the single crystal silicon wafer by irradiating a laser beam from the back side of the single crystal silicon wafer to a second region of the single crystal silicon wafer that is inside the outer circumferential region of the single crystal silicon wafer; and a separation step of separating the single crystal silicon wafer from the first peeling layer and the second peeling layer by applying an external force to the single crystal silicon wafer after performing the bonding step, the first peeling layer forming step, and the second peeling layer forming step, <100> a laser beam irradiation step of irradiating the laser beam onto a linear region along the first direction included in the second region while relatively moving the single crystal silicon wafer and the focal point along a first direction having an angle of 5° or less with respect to a specific crystal orientation included in the second region; and an indexing step of moving an internal position of the single crystal silicon wafer where the focal point is formed by irradiation with the laser beam along a second direction that is parallel to the specific crystal plane and perpendicular to the first direction, therebyA method for processing a wafer in which the second delamination layer is formed is provided.

[0023] Furthermore, the first release layer forming step is preferably performed before the second release layer forming step is performed.

[0024] Moreover, the second region is preferably located more inward than the first region.

[0025] In the first separation layer forming step, the first separation layer is preferably formed so as not to reach the back surface of the single crystal silicon wafer.

[0026] In addition, in the first peeling layer formation step, it is preferable that the laser beam is irradiated such that the closer the focal point to be formed is to the outer circumferential region, the closer it is to the surface of the single crystal silicon wafer, thereby forming the second peeling layer such that a first bottom surface is located on the surface side of the single crystal silicon wafer and a second bottom surface having a diameter shorter than that of the first bottom surface follows the side surface of a truncated cone located inside the single crystal silicon wafer. Effect of the Invention

[0027] In the present invention, a single crystal silicon wafer is manufactured so that a specific crystal plane (for example, a crystal plane (100)) included in the crystal plane {100} is exposed on each of the front and back surfaces, and a single crystal silicon wafer is manufactured so that a crystal plane (for example, a crystal plane (100)) included in the crystal plane {100} is exposed on each of the front and back surfaces. <100> By irradiating the laser beam along a first direction having an angle of 5° or less with respect to a specific crystal orientation (e.g., crystal orientation

[0010] ) included in the single crystal silicon wafer, a delamination layer (second delamination layer) that serves as a separation starting point between the front side and back side of the single crystal silicon wafer is formed.

[0028] In this case, the cracks propagating from the modified region tend to extend along a specific crystal plane included in crystal plane {n10} (n is a natural number less than or equal to 10) (e.g., crystal plane (101)) rather than along a specific crystal plane included in crystal plane {111} (e.g., crystal plane (111)). The acute angle between the specific crystal plane included in crystal plane {100} and the specific crystal plane included in crystal plane {n10} is 45° or less.

[0029] Therefore, in the present invention, a single crystal silicon wafer is manufactured so that a specific crystal plane included in the crystal plane {100} is exposed on each of the front and back surfaces, and a single crystal silicon wafer is manufactured so that a crystal plane parallel to the specific crystal plane and having a crystal orientation <110> In comparison with the case where a second delamination layer is formed by irradiating a laser beam along a specific crystal orientation (e.g., crystal orientation

[0011] ) included in the direction of crack propagation, the component parallel to the front and back surfaces of the wafer (parallel component) in the direction of crack propagation becomes larger, and the perpendicular component (perpendicular component) becomes smaller.

[0030] In this way, in the present invention, the parallel component of the direction in which the crack extends becomes larger, so that the interval between adjacent modified regions can be increased, which results in a longer moving distance (index) in the indexing step, and a shorter processing time (laser beam irradiation time) required to form a peeling layer that serves as the separation starting point between the front side and back side of the wafer.

[0031] In addition, in the present invention, the perpendicular component of the direction in which the crack propagates is small, so that the crack is less likely to propagate from the peeling layer toward the front side of the wafer, thereby reducing the probability of the device being damaged when the front side and back side of the wafer are separated. [Brief description of the drawings]

[0032] [Figure 1] FIG. 1(A) is a top view that typically shows an example of a wafer, and FIG. 1(B) is a cross-sectional view that typically shows an example of a wafer. [Diagram 2]FIG. 2 is a flow chart that illustrates an example of a wafer processing method. [Diagram 3] FIG. 3 is a cross-sectional view that illustrates a schematic view of how the front surface side of the wafer is bonded to the front surface side of the support wafer. [Figure 4] FIG. 4 is a perspective view illustrating an example of a laser processing apparatus. [Diagram 5] FIG. 5 is a diagram showing a schematic view of how a laser beam travels in a laser beam irradiation unit. [Figure 6] FIG. 6 is a partially sectional side view that illustrates a state in which a rotating wafer is irradiated with a laser beam. [Figure 7] FIG. 7 is a flow chart illustrating an example of the second release layer forming step. [Figure 8] FIG. 8 is a partial cross-sectional side view that illustrates a state in which a laser beam is irradiated onto a wafer moving along the X-axis direction. [Figure 9] FIG. 9 is a cross-sectional view that illustrates a schematic diagram of adjacent separation layers formed inside an ingot. [Figure 10] 10(A) and 10(B) are each a partial cross-sectional side view that typically shows how the wafer is separated. [Figure 11] FIG. 11 is a partially sectional side view that illustrates a schematic view of how a rotating wafer is irradiated with a laser beam. [Figure 12] FIG. 12 is a graph showing the width of the exfoliation layer formed inside the wafer when the laser beam is irradiated onto linear regions each aligned along a different crystal orientation. [Figure 13] FIG. 13 is a top view diagrammatically showing a modified example of the wafer. [Figure 14] Each of Fig. 14(A) and Fig. 14(B) is a partial cross-sectional side view that shows a schematic view of how a region in which a plurality of devices are formed on a wafer is separated from an outer peripheral region. [Figure 15] Each of FIG. 15(A) and FIG. 15(B) is a partially sectional side view that typically illustrates how the front surface side and the back surface side of the wafer are separated. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] An embodiment of the present invention will be described with reference to the accompanying drawings. Fig. 1(A) is a top view showing an example of a wafer (single crystal silicon wafer), and Fig. 1(B) is a cross-sectional view showing an example of the wafer (single crystal silicon wafer). Fig. 1(A) also shows the crystal orientation of the single crystal silicon constituting the wafer.

[0034] 1(A) and 1(B) is made of cylindrical single crystal silicon in which a specific crystal plane included in the crystal plane {100} (here, for convenience, it is assumed to be the crystal plane (100)) is exposed on each of the front surface 11a and the back surface 11b. In other words, this wafer 11 is made of cylindrical single crystal silicon in which the perpendicular lines (crystal axes) of the front surface 11a and the back surface 11b are aligned along the crystal orientation

[0100] .

[0035] Although the wafer 11 is manufactured so that the crystal plane (100) is exposed on each of the front surface 11a and the back surface 11b, the front surface 11a and the back surface 11b may be slightly inclined from the crystal plane (100) due to processing errors during manufacturing, etc. Specifically, the front surface 11a and the back surface 11b of the wafer 11 may be a surface whose acute angle formed with the crystal plane (100) is 1° or less.

[0036] That is, the crystal axis of the wafer 11 may be along a direction in which the acute angle formed with the crystal orientation

[0100] is 1° or less. Also, a notch 13 is formed on the side surface 11c of the wafer 11, and the crystal orientation <110> The center of the wafer 11 is located on a specific crystal plane (here, for convenience, the crystal orientation is assumed to be

[0011] ) included in the above.

[0037] Furthermore, the wafer 11 is divided into a plurality of regions by a plurality of dividing lines that intersect with each other, and devices 15 such as ICs (Integrated Circuits), LSIs (Large Scale Integration), semiconductor memories, or CMOS (Complementary Metal Oxide Semiconductor) image sensors are formed on the front surface 11a side of each region.

[0038] Furthermore, a groove in which a TSV is provided may be formed on the front surface 11a side of the wafer 11. The peripheral region of the wafer 11 is chamfered. That is, the side surface 11c of the wafer 11 is curved so as to be convex outward. No devices 15 are formed in the peripheral region of the wafer 11. That is, the region of the wafer 11 in which a plurality of devices 15 are formed is surrounded by the peripheral region.

[0039] 2 is a flow chart showing a schematic example of a wafer processing method. In brief, in this method, a focal point is formed inside the wafer 11, and a laser beam having a wavelength that transmits through the wafer 11 is irradiated onto the wafer 11 to form a peeling layer inside the wafer 11, and then the wafer 11 is separated from the peeling layer as a separation starting point.

[0040] Specifically, in this method, first, the front surface 11a side of the wafer 11 is bonded to the front surface side of the support wafer (bonding step: S1). Fig. 3 is a cross-sectional view that shows a schematic view of bonding the front surface 11a side of the wafer 11 to the front surface side of the support wafer. The support wafer 17 bonded to the wafer 11 has, for example, the same shape as the wafer 11.

[0041] The supporting wafer 17 may be made of single crystal silicon like the wafer 11, and may have a plurality of devices formed on its front surface 17a. The front surface 17a of the supporting wafer 17 is provided with an adhesive 19, such as an acrylic adhesive or an epoxy adhesive.

[0042] Then, in the bonding step (S1), while the back surface 17b side of the supporting wafer 17 is supported, the front surface 11a of the wafer 11 is pressed against the front surface 17a of the supporting wafer 17 via the adhesive 19. As a result, a bonded wafer is formed in which the front surface 11a side of the wafer 11 is bonded to the front surface 17a side of the supporting wafer 17.

[0043] Next, a laser processing device is used to form a peeling layer inside the wafer 11. Fig. 4 is a perspective view that shows a schematic example of a laser processing device used to form a peeling layer inside the wafer 11. Note that the X-axis direction (left-right direction) and the Y-axis direction (front-back direction) shown in Fig. 4 are directions that are perpendicular to each other on a horizontal plane, and the Z-axis direction (up-down direction) is a direction (vertical direction) that is perpendicular to each of the X-axis direction and the Y-axis direction.

[0044] The laser processing device 2 shown in Fig. 4 has a base 4 that supports each of the components. A horizontal movement mechanism 6 is disposed on the upper surface of the base 4. The horizontal movement mechanism 6 is fixed to the upper surface of the base 4 and has a pair of Y-axis guide rails 8 that extend along the Y-axis direction.

[0045] A Y-axis moving plate 10 is connected to the upper surfaces of the pair of Y-axis guide rails 8 in a manner that allows it to slide along the pair of Y-axis guide rails 8. A screw shaft 12 extending along the Y-axis direction is disposed between the pair of Y-axis guide rails 8. A motor 14 for rotating the screw shaft 12 is connected to the front end (one end) of this screw shaft 12.

[0046] A nut portion (not shown) that accommodates balls that roll on the surface of the rotating screw shaft 12 is provided on the surface of the screw shaft 12 on which the helical groove is formed, thereby forming a ball screw. That is, when the screw shaft 12 rotates, the balls circulate inside the nut portion, and the nut portion moves along the Y-axis direction.

[0047] Furthermore, this nut portion is fixed to the underside of the Y-axis moving plate 10. Therefore, when the screw shaft 12 is rotated by the motor 14, the Y-axis moving plate 10 moves along the Y-axis direction together with the nut portion. In addition, a pair of X-axis guide rails 16 extending along the X-axis direction are fixed to the upper surface of the Y-axis moving plate 10.

[0048] An X-axis moving plate 18 is connected to the upper surface side of the pair of X-axis guide rails 16 in a manner that allows it to slide along the pair of X-axis guide rails 16. A screw shaft 20 extending along the X-axis direction is disposed between the pair of X-axis guide rails 16. A motor 22 for rotating the screw shaft 20 is connected to one end of the screw shaft 20.

[0049] A nut portion (not shown) that accommodates balls that roll on the surface of the rotating screw shaft 20 is provided on the surface of the screw shaft 20 on which the helical groove is formed, thereby forming a ball screw. That is, when the screw shaft 20 rotates, the balls circulate inside the nut portion, and the nut portion moves along the X-axis direction.

[0050] Furthermore, this nut portion is fixed to the underside of the X-axis moving plate 18. Therefore, when the screw shaft 20 is rotated by the motor 22, the X-axis moving plate 18 moves along the X-axis direction together with the nut portion.

[0051] A cylindrical table base 24 is disposed on the upper surface side of the X-axis moving plate 18. A holding table 26 for holding the above-mentioned bonded wafer is disposed on the upper portion of this table base 24. This holding table 26 has, for example, a circular upper surface (holding surface) parallel to the X-axis direction and the Y-axis direction, and a porous plate 26a is exposed on this holding surface.

[0052] A rotary drive source (not shown) such as a motor is connected to the bottom of the table base 24. When the rotary drive source operates, the holding table 26 rotates about a rotation axis that passes through the center of the holding surface and is parallel to the Z-axis direction. When the above-mentioned horizontal movement mechanism 6 operates, the holding table 26 moves along the X-axis and / or Y-axis directions.

[0053] Furthermore, the porous plate 26a communicates with a suction source (not shown) such as a vacuum pump through a flow path or the like provided inside the holding table 26. When the suction source operates, a negative pressure is generated in the space near the holding surface of the holding table 26.

[0054] A support structure 30 having a side surface generally parallel to the Y-axis direction and the Z-axis direction is provided on the rear region of the base 4. A vertical movement mechanism 32 is disposed on the side surface of the support structure 30. The vertical movement mechanism 32 is fixed to the side surface of the support structure 30 and has a pair of Z-axis guide rails 34 extending along the Z-axis direction.

[0055] A Z-axis moving plate 36 is connected to the front surface side of the pair of Z-axis guide rails 34 in a manner that allows it to slide along the pair of Z-axis guide rails 34. A screw shaft (not shown) extending along the Z-axis direction is disposed between the pair of Z-axis guide rails 34. A motor 38 for rotating the screw shaft is connected to the upper end (one end) of this screw shaft.

[0056] In addition, a nut portion (not shown) that accommodates balls that roll on the surface of the rotating screw shaft is provided on the surface of the screw shaft where the helical groove is formed, forming a ball screw. That is, when the screw shaft rotates, the balls circulate inside the nut portion, and the nut portion moves along the Z-axis direction.

[0057] Furthermore, this nut portion is fixed to the rear surface side of the Z-axis moving plate 36. Therefore, when the screw shaft disposed between the pair of Z-axis guide rails 34 is rotated by the motor 38, the Z-axis moving plate 36 moves along the Z-axis direction together with the nut portion.

[0058] A support 40 is fixed to the front surface side of the Z-axis moving plate 36. This support 40 supports a part of the laser beam irradiation unit 42. Fig. 5 is a diagram showing a schematic view of the laser beam LB traveling in the laser beam irradiation unit 42. Note that in Fig. 5, some of the components of the laser beam irradiation unit 42 are shown in functional blocks.

[0059] The laser beam irradiation unit 42 has a laser oscillator 44 fixed to the base 4. This laser oscillator 44 has, for example, Nd:YAG or the like as a laser medium, and emits a laser beam LB having a wavelength (for example, 1342 nm) that is transmitted through the wafer 11. This laser beam LB is, for example, a pulse laser beam having a frequency of 60 kHz.

[0060] Then, the output of the laser beam LB is adjusted by the attenuator 46, and then the laser beam LB is supplied to the spatial light modulator 48. The laser beam LB is branched in the spatial light modulator 48. For example, the spatial light modulator 48 branches the laser beam LB adjusted by the attenuator 46 so that the laser beam LB emitted from an irradiation head 52 described later forms a plurality of focusing points whose positions (coordinates) in a plane (XY coordinate plane) parallel to the X-axis direction and the Y-axis direction and / or whose positions (heights) in the Z-axis direction are different from each other.

[0061] Moreover, the laser beam LB branched in the spatial light modulator 48 is reflected by a mirror 50 and guided to an irradiation head 52. The irradiation head 52 contains a condenser lens (not shown) that condenses the laser beam LB, and the like. The laser beam LB condensed by the condenser lens is emitted to the holding surface side of the holding table 26.

[0062] 4, the irradiation head 52 is provided at the front end of a cylindrical housing 54. The support 40 is fixed to the rear side surface of the housing 54. Furthermore, an imaging unit 56 is fixed to the front side surface of the housing 54.

[0063] The imaging unit 56 includes, for example, a light source such as an LED (Light Emitting Diode), an objective lens, and an imaging element such as a CCD (Charge Coupled Device) image sensor or a CMOS image sensor.

[0064] When the above-mentioned vertical movement mechanism 32 operates, the laser beam irradiation unit 42 and the imaging unit 56 move along the Z-axis direction. Furthermore, a cover (not shown) that covers the above-mentioned components is provided on the base 4. A touch panel 58 is disposed on the front surface of this cover.

[0065] The touch panel 58 is configured by an input device such as a capacitive or resistive touch sensor, and a display device such as a liquid crystal display or an organic EL (Electro Luminescence) display, and functions as a user interface.

[0066] When forming a peeled layer inside the wafer 11 using the laser processing device 2, first, the bonded wafer is placed on the holding table 26 so that the center of the holding surface of the holding table 26 coincides with the center of the back surface 17b of the support wafer 17. Next, a suction source communicating with the holding table 26 is operated so that the bonded wafer is held by the holding table 26.

[0067] Next, the imaging unit 56 images the back surface 11b side of the wafer 11 of the bonded wafer to form an image. Next, with reference to this image, the horizontal movement mechanism 6 is operated so that the irradiation head 52 of the laser beam irradiation unit 42 is positioned directly above a region slightly inside the outer circumferential region of the wafer 11.

[0068] In addition, by referring to this image, the rotary drive source connected to the lower part of the table base 24 may be operated to rotate the holding table 26 so that the crystal orientation

[0010] of the single crystal silicon constituting the wafer 11 is parallel to the X-axis direction and the crystal orientation

[0001] is parallel to the Y-axis direction.

[0069] Next, a laser beam LB is irradiated onto a first annular region inside the outer peripheral region of the wafer 11, thereby forming a first peeling layer that serves as the starting point of separation between the region of the wafer 11 in which multiple devices 15 are formed and the outer peripheral region (first peeling layer formation step: S2).

[0070] In this first peeling layer forming step (S2), a holding table 26 that holds the wafer 11 via a support wafer 17 is rotated in a state in which the laser beam LB is irradiated onto a first annular region that is on the inner side of the outer circumferential region of the wafer 11. Fig. 6 is a partially sectional side view that shows a schematic view of the state in which the rotating wafer 11 is irradiated with the laser beam LB.

[0071] Specifically, in this first peeling layer formation step (S2), a laser beam LB is branched so as to form multiple (e.g., 2 to 10) focal points each having a different position (height) in the Z-axis direction, and the laser beam LB is irradiated onto the wafer 11.

[0072] For example, the lowest focusing point of the multiple focusing points is positioned slightly higher than the front surface 11a of the wafer 11, and the topmost focusing point is positioned at an intermediate height between the front surface 11a and the back surface 11b of the wafer 11. The multiple focusing points are arranged such that their positions (heights) in the Z-axis direction are at equal intervals (for example, every 5 μm to 15 μm).

[0073] In this case, modified regions 21 with a disturbed crystal structure are formed around each of the multiple light-focusing points inside the wafer 11. Furthermore, cracks 23 extend from each of the multiple modified regions 21 so as to connect a pair of adjacent modified regions 21.

[0074] As a result, a peeled layer including a plurality of modified regions 21 and cracks 23 propagating from each of the plurality of modified regions 21 is formed inside the wafer 11. Next, while the wafer 11 is being irradiated with the laser beam LB, the rotation drive source connected to the lower part of the table base 24 is operated so as to rotate the holding table 26 that holds the bonded wafer once.

[0075] As a result, a peeling layer (first peeling layer) is formed between the region where the multiple devices 15 are formed and the outer peripheral region of the wafer 11. This first peeling layer has, for example, a cylindrical shape with a lower bottom surface located on the front surface 11a side of the wafer 11 and an upper bottom surface along the side surface of a cylinder located inside the wafer 11.

[0076] Next, a second region inside the outer circumferential region of the wafer 11 is irradiated with a laser beam LB to form a second separation layer that serves as a separation starting point between the front surface 11a side and the back surface 11b side of the wafer 11 (second separation layer forming step: S3). Fig. 7 is a flow chart that illustrates an example of the second separation layer forming step (S3).

[0077] In this second peeled layer forming step (S3), first, a laser beam LB is irradiated to a linear area along the crystal orientation

[0010] of the single crystal silicon constituting the wafer 11 (laser beam irradiation step: S31). For example, when the bonded wafer is held on the holding table 26 with the crystal orientation

[0010] parallel to the X-axis direction, the wafer 11 is irradiated with the laser beam LB while the holding table 26 is moved along the X-axis direction.

[0078] 8 is a partial cross-sectional side view that shows a schematic view of a state in which a laser beam LB is irradiated onto a wafer 11 moving along the X-axis direction. In this laser beam irradiation step (S31), for example, the laser beam LB is branched so as to form a plurality of (e.g., 2 to 10) focusing points each having a different position (coordinate) in the Y-axis direction, and is irradiated onto the wafer 11.

[0079] The multiple light focusing points are positioned, for example, at the same height as the uppermost modified region 21 among the multiple modified regions 21 included in the above-mentioned first peeling layer. Also, the multiple light focusing points are arranged, for example, such that their positions (coordinates) in the Y-axis direction are at equal intervals (for example, every 5 μm to 15 μm).

[0080] In this case, similarly to the first peeling layer formation step (S2), a plurality of modified regions 21 and cracks 23 propagating from each of the plurality of modified regions 21 are formed inside the wafer 11. Next, while the wafer 11 is being irradiated with the laser beam LB, the horizontal movement mechanism 6 is operated to move the holding table 26 that holds the bonded wafer along the X-axis direction.

[0081] As a result, a peeling layer 25 is formed in a linear region along the X-axis direction included in a second region inside the outer circumferential region of the wafer 11. Here, most of the cracks 23 included in this peeling layer 25 extend along a crystal plane (k01) (k is an integer having an absolute value of 10 or less, excluding 0). That is, when the wafer 11 is irradiated with the laser beam LB in this manner, the cracks 23 tend to extend along the following crystal planes.

number

number

[0082] The acute angle between the crystal plane (100) and the crystal plane (k01) exposed on the front surface 11a and back surface 11b of the wafer 11 is 45° or less. Therefore, when the direction in which the crack 23 extends is decomposed into a component parallel to the front surface 11a and back surface 11b of the wafer 11 (parallel component) and a component perpendicular to the front surface 11a and back surface 11b of the wafer 11, the parallel component is larger than the perpendicular component.

[0083] Next, the holding table 26 is moved along the crystal orientation

[0001] of the single crystal silicon constituting the wafer 11 (indexing and feeding step (S32)). For example, when the bonded wafer is held on the holding table 26 in a state in which the crystal orientation

[0001] of the single crystal silicon constituting the wafer 11 is parallel to the Y-axis direction, the holding table 26 is moved along the Y-axis direction.

[0084] Next, the laser beam irradiation unit 42 and the horizontal movement mechanism 6 are operated so that the peeling layer 25 is formed in a linear region parallel to the linear region where the peeling layer 25 has already been formed. That is, the laser beam irradiation step (S31) is performed again. Figure 9 is a cross-sectional view that shows a schematic diagram of adjacent peeling layers 25 formed inside the wafer 11 by performing the laser beam irradiation step (S31) twice.

[0085] In this case, a peeling layer 25 (peeling layer 25-2) that is parallel to the peeling layer 25 (peeling layer 25-1) formed in the first laser beam irradiation step (S31) and separated from the peeling layer 25-1 in the Y-axis direction is formed inside the wafer 11. Furthermore, the indexing step (S32) and the laser beam irradiation step (S31) are repeatedly performed so that the peeling layer 25 is formed over the entire second region inside the outer periphery region of the wafer 11 (from the region on one end side to the region on the other end side in the Y-axis direction).

[0086] Then, when the peeling layer 25 is formed over the entire second region inside the outer peripheral region of the wafer 11 (step (S33): YES), the second peeling layer forming step (S3) is completed. As a result, a peeling layer (second peeling layer) is formed between the front surface 11a side and the back surface 11b side of the wafer 11. This second peeling layer has, for example, a disk-like shape that follows the upper and bottom surfaces of a cylinder having a side surface that follows the above-mentioned first peeling layer.

[0087] In the method shown in FIG. 2, after performing the first peeling layer formation step (S2) and the second peeling layer formation step (S3), an external force is applied to the wafer 11 to separate the wafer 11 using the first peeling layer and the second peeling layer as separation starting points (separation step: S4).

[0088] 10(A) and 10(B) are partial cross-sectional side views that diagrammatically show how the wafer 11 is separated. This separation step (S4) is performed, for example, in a separation apparatus 60 shown in Fig. 10(A) and 10(B). This separation apparatus 60 has a holding table 62 that holds a bonded wafer including the wafer 11 on which the first and second separation layers are formed.

[0089] The holding table 62 has a circular upper surface (holding surface), and a porous plate (not shown) is exposed on this holding surface. Furthermore, this porous plate communicates with a suction source (not shown) such as a vacuum pump via a flow path or the like provided inside the holding table 62. When the suction source operates, negative pressure is generated in the space near the holding surface of the holding table 62.

[0090] Moreover, a separation unit 64 is provided above the holding table 62. This separation unit 64 has a cylindrical support member 66. For example, a ball screw type lifting mechanism (not shown) is connected to the upper part of this support member 66, and the separation unit 64 is raised and lowered by operating this lifting mechanism.

[0091] Further, the lower end of the support member 66 is fixed to the center of the upper part of a disk-shaped gripping claw base 68. A plurality of gripping claws 70 are provided at approximately equal intervals along the circumferential direction of the gripping claw base 68 below the outer circumferential region of the gripping claw base 68. The gripping claws 70 are provided with plate-shaped erected portions 70a extending downward.

[0092] An upper end of the standing portion 70a is connected to an actuator such as an air cylinder built into the gripping claw base 68, and by operating this actuator, the gripping claws 70 move along the radial direction of the gripping claw base 68. In addition, a plate-shaped claw portion 70b is provided on the inner surface of the lower end of the standing portion 70a, which extends toward the center of the gripping claw base 68 and becomes thinner as it approaches the center of the gripping claw base 68.

[0093] In the separation apparatus 60, the separation step (S4) is performed, for example, in the following order. Specifically, first, the bonded wafer including the wafer 11 on which the first and second peeling layers are formed is placed on the holding table 62 so that the center of the back surface 17b of the supporting wafer 17 of the bonded wafer is aligned with the center of the holding surface of the holding table 62.

[0094] Next, a suction source communicating with the porous plate exposed on the holding surface is operated so that the bonded wafer is held by the holding table 62. Next, an actuator is operated so that each of the multiple gripping jaws 70 is positioned radially outward of the gripping jaw base 68.

[0095] Next, the lifting mechanism is operated to position the tip of each of the claw portions 70b of the multiple gripping claws 70 at a height corresponding to the adhesive 19 of the bonded wafer. Next, the actuator is operated to bring the claw portions 70b into contact with the bonded wafer. Next, the lifting mechanism is operated to raise the claw portions 70b (see FIG. 10(A)).

[0096] This applies an upward external force to the outer circumferential region of the wafer 11, i.e., an external force along the thickness direction of the wafer 11. As a result, the cracks 23 included in the first and second peeling layers extend further, separating the region of the wafer 11 where the devices 15 are formed from the outer circumferential region, and separating the front surface 11a side from the back surface 11b side (see FIG. 10(B)).

[0097] In the above-mentioned wafer processing method, a laser beam LB is irradiated along the crystal orientation

[0010] to the wafer 11, which has been manufactured so that the crystal plane (100) is exposed on each of the front surface 11a and back surface 11b, to form a peeling layer (second peeling layer) that serves as the starting point for separation between the front surface 11a side and the back surface 11b side of the wafer 11.

[0098] In this case, many of the cracks 23 propagating from the modified region 21 are aligned along the crystal plane (k01) (k is an integer with an absolute value of 10 or less, excluding 0). The acute angle formed between the crystal plane (100) of the single crystal silicon and the crystal plane (k01) is 45° or less. Therefore, in this wafer processing method, the component parallel to the front surface 11a and back surface 11b of the wafer 11 in the direction in which the cracks 23 propagate (parallel component) is greater than or equal to the perpendicular component (perpendicular component).

[0099] This makes it possible to increase the distance between adjacent modified regions 21 in this wafer processing method. As a result, the movement distance (index) in the indexing step (S42) can be increased, and the processing time (irradiation time of laser beam LB) required to form peeling layer 25, which serves as the separation starting point between the front surface 11a side and the back surface 11b side of wafer 11, can be shortened.

[0100] Furthermore, in this wafer processing method, the crack 23 is less likely to extend from the peeling layer 25 toward the front surface 11a side of the wafer 11. As a result, the probability of the device 15 being damaged when the front surface 11a side and the back surface 11b side of the wafer 11 are separated can be reduced.

[0101] The above-mentioned wafer processing method is one aspect of the present invention, and the present invention is not limited to the above-mentioned method. For example, in the present invention, after the first release layer and the second release layer are formed on the wafer 11, the front surface 11a side of the wafer 11 may be bonded to the front surface 17a side of the support wafer 17. That is, in the present invention, the bonding step (S1) may be performed after the first release layer forming step (S2) and the second release layer forming step (S3) are performed.

[0102] Furthermore, the structure of the laser processing device used in the present invention is not limited to the above-mentioned structure of the laser processing device 2. For example, the present invention may be implemented using a laser processing device provided with a horizontal movement mechanism that moves the irradiation head 52 of the laser beam irradiation unit 42 and the like along each of the X-axis and / or Y-axis directions.

[0103] That is, in the present invention, it is only necessary that the holding table 26 that holds the bonded wafer including the wafer 11 and the irradiation head 52 of the laser beam irradiation unit 42 that emits the laser beam LB can move relatively along each of the X-axis direction and the Y-axis direction, and there is no limitation on the structure for this purpose.

[0104] In addition, in the present invention, the order of the first release layer forming step (S2) and the second release layer forming step (S3) is not limited. That is, in the present invention, the first release layer forming step (S2) may be performed after the second release layer forming step (S3).

[0105] However, when a disk-shaped second peeling layer is formed inside the wafer 11 in the second peeling layer formation step (S3), it may become impossible or difficult to form a new peeling layer on the surface 11a side of the wafer 11 relative to this second peeling layer.

[0106] Therefore, in the present invention, it is preferable to perform the second separation layer forming step (S3) after performing the first separation layer forming step (S2), which can reliably form a separation layer (first separation layer) that serves as a separation starting point between the region where the devices 15 of the wafer 11 are formed and the outer peripheral region.

[0107] Alternatively, in the present invention, it is preferable that the second region of the wafer 11 where the second separation layer is formed is located more inward than the first region where the first separation layer is formed. This allows the first separation layer to be reliably formed even when the first separation layer forming step (S2) is performed after the second separation layer forming step (S3) is performed.

[0108] Furthermore, in the first separation layer forming step (S2) of the present invention, the shape of the first separation layer is not limited as long as it is possible to form a first separation layer that can function as a separation starting point between the region where the multiple devices 15 are formed and the outer peripheral region of the wafer 11. For example, the first separation layer may have a shape that follows the side of a cylinder whose lower bottom surface is located on the front surface 11a side of the wafer 11 and whose upper bottom surface is located on the back surface 11b side of the wafer 11.

[0109] That is, the first peeling layer may be formed so as to penetrate the front surface 11a and the back surface 11b of the wafer 11. However, if the first peeling layer has such a shape, there is a risk that the peripheral region of the wafer 11 will scatter as scraps in the separation step (S4). Therefore, in the first peeling layer forming step (S2) of the present invention, it is preferable that the first peeling layer is formed so as not to reach the back surface 11b of the wafer 11.

[0110] The first peeling layer may have a shape in which a lower bottom surface (first bottom surface) is located on the surface 11a side of the wafer 11, and an upper bottom surface (second bottom surface) having a diameter shorter than that of the lower bottom surface is shaped to fit the side of a truncated cone located inside the wafer 11. Such a first peeling layer is formed, for example, by irradiating the wafer 11 with the laser beam LB such that the closer the focal point is to the outer circumferential region, the closer it is to the surface 11a of the wafer 11.

[0111] 11 is a partially sectional side view that shows a schematic view of irradiating a rotating wafer 11 with a laser beam LB in order to form a first peeling layer having such a shape. Specifically, when forming such a first peeling layer, first, the wafer 11 is irradiated with a laser beam LB that forms a plurality of (e.g., eight) focusing points whose positions are shifted by 10 μm inside the wafer 11 in each of the radial direction (direction perpendicular to the Z-axis direction) and thickness direction (Z-axis direction) of the wafer 11.

[0112] In this case, modified regions 21 in which the crystal structure of the material constituting the wafer 11 is disturbed are formed inside the wafer 11, with each of the multiple light-focusing points as the center. That is, multiple modified regions 21 are formed that are aligned in a straight line along the radial direction of the wafer 11 in a plan view, and the acute angle between this line and the surface 11a of the wafer 11 is 45°.

[0113] The acute angle between the linearly arranged modified regions 21 and the surface 11a of the wafer 11 is not limited to 45°. In other words, the laser beam LB may be irradiated onto the wafer 11 so as to form a plurality of focal points whose spacing between adjacent focal points in the radial direction of the wafer 11 is different from their spacing in the thickness direction.

[0114] Furthermore, a crack 23 extends from each of the multiple modified regions 21 so as to connect an adjacent pair of modified regions 21. As a result, a peeling layer including the multiple modified regions 21 and the cracks 23 extending from each of the multiple modified regions 21 is formed inside the wafer 11.

[0115] Next, while the laser beam irradiation unit 42 is kept in operation, the rotary drive source connected to the lower part of the table base 24 is operated so as to rotate the holding table 26 that holds the bonded wafer once.

[0116] As a result, a peeling layer (first peeling layer) having a lower bottom surface located on the surface 11a side of the wafer 11 and an upper bottom surface that follows the side of the truncated cone located inside the wafer 11 is formed in an annular first region inside the outer circumferential region of the wafer 11.

[0117] When such a first peeling layer is formed, the side surface of the newly exposed region in which the devices 15 are formed and the inner side surface of the outer circumferential region are less likely to come into contact with each other when the wafer 11 is separated in the above-mentioned separation apparatus 60. In this case, the crack 23 is more likely to extend from the first peeling layer in the direction along the side surface of the truncated cone.

[0118] Therefore, in this case, the probability that the crack 23 will extend toward the device 15 is also reduced, and damage to the device 15 can be suppressed. Furthermore, when such a first peeling layer is formed, it becomes easy to manufacture chips by using a region close to the outer periphery region of the front surface 11a of the wafer 11. Therefore, in this case, the number of chips that can be manufactured from the wafer 11 can be increased.

[0119] Furthermore, in the first peeling layer forming step (S2) of the present invention, the laser beam LB may be irradiated onto the wafer 11 while operating the horizontal movement mechanism 6 and the vertical movement mechanism 32 in addition to or instead of the rotation drive source connected to the lower part of the table base 24. That is, the laser beam LB may be irradiated onto the wafer 11 while not only rotating the wafer 11 but also changing the coordinate and height of the focal point on the XY coordinate plane.

[0120] In the first separation layer forming step (S2) of the present invention, the laser beam LB may be irradiated multiple times with the same or close focusing points. In this case, the size of the modified region 21 included in the separation layer increases, and the cracks 23 included in the separation layer further extend. Therefore, in this case, separation of the wafer 11 in the separation step (S4) becomes easier.

[0121] Furthermore, in the first peeling layer forming step (S2) of the present invention, the laser beam LB may be irradiated onto the wafer 11 so that adjacent modified regions 21 are directly connected to each other, not connected via the crack 23. In this case, the shape of the peeling layer can be determined independently of the shape of the crack 23 propagating from the modified region 21, thereby enabling stable processing of the wafer 11.

[0122] Furthermore, the region irradiated with the laser beam LB in the laser beam irradiation step (S31) of the second separation layer formation step (S3) of the present invention is not limited to a linear region along the crystal orientation

[0010] of the single crystal silicon constituting the wafer 11. For example, in this laser beam irradiation step (S31), the laser beam LB may be irradiated to a linear region along the crystal orientation

[0001] .

[0123] When the wafer 11 is irradiated with the laser beam LB in this manner, the crack 23 tends to propagate in the following crystal planes.

number

number

[0124] Furthermore, in the present invention, the laser beam LB may be irradiated to a linear region along a direction slightly tilted from the crystal orientation

[0010] or the crystal orientation

[0001] in a plan view. This point will be described with reference to FIG.

[0125] 12 is a graph showing the width (length in a direction perpendicular to the direction in which the linear regions extend) of the peeled layer formed inside the wafer 11 when the laser beam LB is irradiated to linear regions each aligned along a different crystal orientation. The horizontal axis of this graph shows the angle between the direction in which the linear region (reference region) perpendicular to the crystal orientation

[0011] extends and the direction in which the linear region to be measured (measurement region) extends in a plan view.

[0126] That is, when the horizontal axis of this graph is 45°, the linear region along the crystal orientation

[0001] is the measurement target. Similarly, when the horizontal axis of this graph is 135°, the linear region along the crystal orientation

[0010] is the measurement target. Also, the vertical axis of this graph shows the value obtained by dividing the width of the peeled layer formed in the measurement region by irradiating the measurement region with the laser beam LB by the width of the peeled layer formed in the reference region by irradiating the reference region with the laser beam LB.

[0127] 12, the width of the peeled layer is increased when the angle between the direction in which the reference region extends and the direction in which the measurement region extends is 40° to 50° or 130° to 140°. That is, the width of the peeled layer is increased when the laser beam LB is irradiated not only to the crystal orientation

[0001] or the crystal orientation

[0010] , but also to a linear region along a direction that forms an angle of 5° or less with respect to these crystal orientations.

[0128] Therefore, in the laser beam irradiation step (S31) of the second peeling layer formation step (S3) of the present invention, the laser beam LB may be irradiated to a linear region along a direction tilted by 5° or less from the crystal orientation

[0001] or the crystal orientation

[0010] in a planar view.

[0129] That is, in this laser beam irradiation step (S31), a specific crystal plane included in the crystal plane {100} is parallel to the crystal plane (here, the crystal plane (100)) exposed on each of the front surface 11a and the back surface 11b of the wafer 11 and has a crystal orientation <100> The laser beam LB may be irradiated onto a linear region along a direction (first direction) that has an angle of 5° or less with respect to a specific crystal orientation (here, crystal orientation

[0001] or crystal orientation

[0010] ) included in the crystal orientation.

[0130] Furthermore, when the laser beam irradiation step (S31) is performed in this manner, the indexing step (S32) is performed by moving a position inside the wafer 11 where a focal point is formed by irradiation with the laser beam LB along a direction (second direction) that is parallel to a crystal face (here, crystal face (100)) exposed on each of the front surface 11a and back surface 11b of the wafer 11 among specific crystal faces included in the crystal face {100} and perpendicular to the first direction.

[0131] Furthermore, in the second peeling layer formation step (S3) of the present invention, after a peeling layer 25 is formed over the entire second region inside the outer circumferential region of the wafer 11 (from the region on one end side in the Y-axis direction to the region on the other end side) (step S33: YES), the laser beam irradiation step (S31) and the indexing feed step (S32) may be repeated again.

[0132] That is, the second region where the peeling layer 25 has already been formed may be irradiated with the laser beam LB again to form the peeling layer 25. In this case, the density of the modified regions 21 and the cracks 23 included in the peeling layer 25 increases. This makes it easier to separate the wafer 11 in the separation step (S4).

[0133] In the second peeling layer forming step (S3) of the present invention, after the laser beam irradiation step (S31) and before the indexing step (S32), the laser beam irradiation step (S31) may be performed again. That is, the linear region where the peeling layer 25 has already been formed may be irradiated with the laser beam LB again to form the peeling layer 25. In this case, as in the above, separation of the wafer in the separation step (S4) becomes easier.

[0134] Furthermore, in the separation step (S4) of the present invention, prior to separation of the wafer 11 on which the first and second separation layers are formed, ultrasonic waves may be applied to the wafer 11. In this case, the cracks 23 contained in the first and second separation layers are extended, making it easier to separate the wafer 11.

[0135] Furthermore, in the separation step (S4) of the present invention, the wafer 11 may be separated using an apparatus other than the above-mentioned separation apparatus 60. For example, in the separation step (S4) of the present invention, after separating the region of the wafer 11 in which the plurality of devices 15 are formed from the outer peripheral region, the front surface 11a side and the back surface 11b side of the wafer 11 may be separated.

[0136] An example of such a separation step (S4) will be described below with reference to Figures 13 to 15. Figure 13 is a top view that typically shows a wafer 11 that is subjected to such a separation step (S4). A plurality of notches 11d each extending along the radial direction of the wafer 11 are formed in the outer peripheral region of the wafer 11 prior to the above-mentioned bonding step (S1).

[0137] The plurality of cutouts 11d are formed at approximately equal intervals along the circumferential direction of the wafer 11, except for the portion where the notch 13 is formed. Each of the plurality of cutouts 11d is formed such that the radially inner portion of the wafer 11 reaches the first separation layer formed in the above-mentioned first separation layer forming step (S2).

[0138] The first peeled layer formed inside the wafer 11 has a shape that follows the side of a cylinder whose lower bottom surface is located on the front surface 11a side of the wafer 11 and whose upper bottom surface is located on the back surface 11b side of the wafer 11. That is, in the wafer 11, a first peeled layer is formed that penetrates the front surface 11a and the back surface 11b of the wafer 11.

[0139] The plurality of notches 11d are formed, for example, by cutting the wafer 11 using a known cutting device. Alternatively, the plurality of notches 11d may be formed by irradiating the wafer 11 with a laser beam that causes laser ablation in a known laser processing device.

[0140] Furthermore, instead of the plurality of notches 11d, a plurality of peeling layers each extending along the radial direction of the wafer 11 may be formed in the outer peripheral region of the wafer 11. Note that this peeling layer is formed, for example, by a method similar to the method for forming the first and second peeling layers described above.

[0141] 14(A) and 14(B) are each a partial cross-sectional side view that shows a schematic diagram of a state in which a region where a plurality of devices 15 are formed and an outer peripheral region of the wafer 11 shown in Fig. 13 are separated. This separation of the wafer 11 is performed using an expansion apparatus 72 shown in Fig. 14(A) and 14(B).

[0142] The expansion device 72 has a fixed cylindrical drum 74. A support unit 76 is provided around the drum 74. The support unit 76 has an annular support base 78 that is provided so as to surround the upper end of the drum 74. A plurality of clamps 80 are provided on the support base 78 at approximately equal intervals along the circumferential direction of the support base 78.

[0143] In addition, a plurality of air cylinders are provided below the support base 78 at approximately equal intervals along the circumferential direction of the support base 78, and the upper end of the piston rod 82 of each air cylinder is fixed to the lower part of the support base 78. Therefore, in the expansion device 72, the support base 78 and the plurality of clamps 80 can be raised and lowered together with the piston rod 82 by operating the plurality of air cylinders.

[0144] 13, when separating the region where the multiple devices 15 of the wafer 11 are formed from the outer peripheral region, first, an annular frame 29 is attached to the peripheral region of one surface of a disk-shaped expanding tape 27, and the back surface 11b of the wafer 11 is attached to the central region of the annular frame 29. As a result, a frame unit is formed in which the bonded wafer in which the wafer 11 and the support wafer 17 are bonded together and the annular frame 29 are integrated.

[0145] Next, the multiple air cylinders are operated so that the upper surface of the support table 78 is positioned on the same plane as the upper end of the drum 74. Next, the annular frame 29 is placed on the support table 78 via the expanding tape 27. That is, the frame unit is placed on the support table 78 so that the support wafer 17 faces upward.

[0146] Next, the annular frame 29 is fixed by a plurality of clamps 80 (see FIG. 14(A)). Next, a plurality of air cylinders are operated to lower the annular frame 29 fixed by the plurality of clamps 80. As a result, the central region of the expanding tape 27 is expanded along the radial direction of the wafer 11 by an amount equivalent to the amount by which the annular frame 29 is lowered.

[0147] At this time, a force acting radially outward of the wafer 11 acts on the wafer 11 attached to the expanding tape 27. As a result, the first peeling layer becomes the separation starting point, and the region of the wafer 11 where the multiple devices 15 are formed is separated from the outer peripheral region (see FIG. 14(B)).

[0148] Fig. 15(A) and Fig. 15(B) are each a partially sectional side view that shows a schematic diagram of a state in which the front surface 11a side and the back surface 11b side of the wafer 11 shown in Fig. 14(B) are separated. This separation of the wafer 11 is performed using a separation device 84 shown in Fig. 15(A) and Fig. 15(B). This separation device 84 has a holding table 86 that holds a bonded wafer including the wafer 11 shown in Fig. 14(B).

[0149] The holding table 86 has a circular upper surface (holding surface), and a porous plate (not shown) is exposed on this holding surface. Furthermore, this porous plate communicates with a suction source (not shown) such as a vacuum pump through a flow path or the like provided inside the holding table 86. Therefore, when the suction source operates, negative pressure is generated in the space near the holding surface of the holding table 86.

[0150] Moreover, a separation unit 88 is provided above the holding table 86. This separation unit 88 has a cylindrical support member 90. For example, a ball screw type lifting mechanism (not shown) is connected to the upper part of this support member 90, and the separation unit 88 is raised and lowered by operating this lifting mechanism.

[0151] The lower end of the support member 90 is fixed to the center of the upper part of a disk-shaped suction plate 92. A plurality of suction ports are formed in the lower surface of the suction plate 92, and each of the plurality of suction ports is connected to a suction source (not shown) such as a vacuum pump via a flow path or the like provided inside the suction plate 92. Therefore, when the suction source is operated, a negative pressure is generated in the space near the lower surface of the suction plate 92.

[0152] 14(B), when separating the front surface 11a side and the back surface 11b side of the wafer 11, first, the bonded wafer including the wafer 11 is removed from the expanding tape 27. Next, the bonded wafer is placed on the holding table 86 so that the center of the back surface 17b of the supporting wafer 17 of the bonded wafer coincides with the center of the holding surface of the holding table 86.

[0153] Next, a suction source communicating with the porous plate exposed on the holding surface is operated so that the bonded wafer is held by the holding table 86. Next, the lifting mechanism is operated to lower the separation unit 88 so that the lower surface of the suction plate 92 contacts the back surface 11b of the wafer 11.

[0154] Next, a suction source communicating with the plurality of suction ports is operated so that the back surface 11b side of the wafer 11 is sucked through the plurality of suction ports formed in the suction plate 92. Next, the lifting mechanism is operated to lift the separation unit 88 so as to separate the suction plate 92 from the holding table 86 (see FIG. 15(A)).

[0155] At this time, a force acts on the wafer 11, the back surface 11b of which is sucked through a plurality of suction ports formed in the suction plate 92, in an upward direction in the thickness direction of the wafer 11. As a result, the second peeling layer becomes the separation starting point, and the front surface 11a side and the back surface 11b side of the wafer 11 are separated (see FIG. 15(B)).

[0156] In addition, the structures and methods according to the above-described embodiments can be modified as appropriate without departing from the scope of the present invention. [Explanation of symbols]

[0157] 11: Wafer (11a: front surface, 11b: back surface, 11c: side surface, 11d: notch) 13:Notch 15: Device 17: Support wafer (17a: front side, 17b: back side) 19: Adhesive 21: Modified area 23: Crack 25(25-1, 25-2): peeling layer 27: Expandable tape 29: Circular frame 2: Laser processing equipment 4: Base 6: Horizontal movement mechanism 8: Y-axis guide rail 10: Y-axis moving plate 12: Screw shaft 14: Motor 16: X-axis guide rail 18: X-axis moving plate 20: Screw shaft 22: Motor 24: Table base 26: Holding table (26a: Porous plate) 30:Support structure 32: Vertical movement mechanism 34: Z-axis guide rail 36: Z-axis moving plate 38: Motor 40: Support 42: Laser beam irradiation unit 44: Laser oscillator 46: Attenuator 48: Spatial light modulator 50: Mirror 52: Irradiation head 54: Housing 56: Imaging unit 58: Touch panel 60: Separation device 62: Holding table 64: Separation unit 66: Support member 68: Gripping claw base 70: Gripping claw (70a: standing part, 70b: claw part) 72: Expansion device 74: Drums 76: Support unit 78: Support stand 80: Clamp 82: Piston rod 84: Separation device 86: Holding table 88: Separation unit 90: Support member 92: Suction plate

Claims

1. A processing method for a single crystal silicon wafer, which is manufactured so that a specific crystal plane included in the crystal plane {100} is exposed on each of a front surface and a back surface, and a plurality of devices are formed on the front surface side and an outer peripheral region is chamfered, the method including: positioning a formed focal point inside the single crystal silicon wafer; irradiating a laser beam having a wavelength that transmits single crystal silicon to form a peeled layer inside the single crystal silicon wafer, and then separating the single crystal silicon wafer using the peeled layer as a separation starting point, the method comprising the steps of: a bonding step of bonding the front surface side of the single crystal silicon wafer to the front surface side of a support wafer; a first separation layer forming step of forming a first separation layer serving as a separation starting point between a region of the single crystal silicon wafer in which the plurality of devices are formed and the outer circumferential region by irradiating the laser beam from the back surface side of the single crystal silicon wafer to a first annular region that is located inside the outer circumferential region of the single crystal silicon wafer; a second peeling layer forming step of forming a second peeling layer serving as a separation starting point between the front side and the back side of the single crystal silicon wafer by irradiating the laser beam from the back side of the single crystal silicon wafer to a second region inside the outer circumferential region of the single crystal silicon wafer; and a separation step of applying an external force to the single crystal silicon wafer after performing the bonding step, the first separation layer forming step, and the second separation layer forming step, thereby separating the single crystal silicon wafer from the first separation layer and the second separation layer as separation starting points, In the second release layer forming step, a laser beam irradiation step of irradiating the laser beam onto a linear region along the first direction included in the second region while relatively moving the single crystal silicon wafer and the focal point along a first direction which is parallel to the specific crystal plane and has an angle of 5° or less with respect to a specific crystal orientation included in the crystal orientation <100>; an indexing step of moving a position inside the single crystal silicon wafer where the focal point is formed by irradiation with the laser beam along a second direction that is parallel to the specific crystal plane and perpendicular to the first direction; and forming the second peeled layer by repeatedly performing the steps of the above.

2. 2. The wafer processing method according to claim 1, wherein the first separation layer forming step is performed before the second separation layer forming step is performed.

3. 3. The wafer processing method according to claim 1, wherein the second region is located more inward than the first region.

4. 4. The wafer processing method according to claim 1, wherein in the first separation layer formation step, the first separation layer is formed so as not to reach the back surface of the single crystal silicon wafer.

5. 5. The wafer processing method according to claim 1, wherein in the first peeling layer forming step, the laser beam is irradiated such that the closer the focal point to be formed is to the outer circumferential region, the closer it is to the surface of the single crystal silicon wafer, thereby forming the second peeling layer having a first bottom surface located on the surface side of the single crystal silicon wafer and a second bottom surface having a diameter shorter than that of the first bottom surface along a side surface of a truncated cone located inside the single crystal silicon wafer.

Images