Method for manufacturing a support member and method for manufacturing a semiconductor device

Abstract

To provide a method for manufacturing support members that can produce inexpensive support members with high yield.SOLUTION: A method for manufacturing support pieces comprises the processes of: preparing a laminate film to which an adhesive film is attached via an adhesive layer to a base film; preparing a ring for individualizing the adhesive film; attaching the base film to the ring via the adhesive layer so that the adhesive film is placed inside the ring; and individualizing the adhesive film of the laminated film attached to the ring into a plurality of support pieces. In the attaching process, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation of the laminated film is greater than 100% and equal to or less than 101%.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a support member and a method for manufacturing a semiconductor device. [Background technology]

[0002] As one aspect of a semiconductor device, a structure in which a semiconductor chip is stacked on a semiconductor chip arranged on a substrate has been attracting attention. For example, Patent Document 1 discloses a configuration in which another semiconductor chip is stacked on a semiconductor chip via a spacer. Patent Document 2 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. Such a structure is also called, for example, a Dolmen structure. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-220913 A [Patent Document 2] Special Publication No. 2017-515306 Summary of the Invention [Problem to be solved by the invention]

[0004] For example, in the structure of the semiconductor device shown in Patent Document 2, a support member containing an expensive silicon chip is used. In addition, in order to manufacture this support member, a process of polishing silicon or the like is required before dicing into each support member. Therefore, it has been considered to manufacture an inexpensive support member that does not contain a silicon chip from a resin film, for example, an adhesive film such as DAF (Die Attach Film). However, when a support member is manufactured from a resin film that does not contain silicon, voids may occur in the resin film when the resin film is attached to a ring frame for dicing. Such voids may cause chips to fly off the support member when the resin film is diced into individual pieces, thereby reducing the manufacturing yield of the support member.

[0005] In view of this, the present disclosure provides a method for manufacturing a support member that can manufacture inexpensive support members with a high yield, and a method for manufacturing a semiconductor device that uses a support member manufactured by the manufacturing method. [Means for solving the problem]

[0006] The present disclosure relates to a method for manufacturing a support member. The method includes the steps of preparing a laminated film in which an adhesive film is attached to a base film via an adhesive layer, preparing a ring for dividing the adhesive film, attaching the base film to the ring via the adhesive layer so that the adhesive film is disposed inside the ring, and dividing the adhesive film of the laminated film attached to the ring into a plurality of support members. In the attaching step, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation rate of the laminated film when attached is greater than 100% and less than or equal to 101%.

[0007] In the above manufacturing method, the laminate film is attached to the ring while applying tension to the laminate film so that the elongation rate of the laminate film used to prepare the support member when attached is greater than 100% and less than or equal to 101%. In this case, the tension applied to the laminate film is reduced, so that the elongation force applied to the adhesive film constituting the laminate film is also reduced, and when the laminate film is attached to the ring, peeling of the adhesive film from the base film is reduced. Peeling is particularly likely to occur near the outer periphery of the base film (adhesive layer) and the adhesive film, but the above manufacturing method reduces peeling of the adhesive film from the base film. As a result, voids are less likely to occur between the laminate consisting of the base film and the adhesive layer and the adhesive film. By reducing such voids, this manufacturing method makes it possible to suppress chip flying during individualization and manufacture inexpensive support members with a high yield. The "elongation rate of the laminate film" referred to here is a value indicating the elongation rate of the laminate film when attached to the ring, with the laminate film before being attached to the ring being taken as the reference (100%).

[0008] In the above-mentioned method for producing a support member, in the attaching step, the laminate film may be attached to the ring while applying tension to the laminate film so that the elongation rate of the laminate film when attached is 100.25% or less. In this case, the tension applied to the laminate film is further reduced, so that it is possible to more reliably suppress wrinkles occurring in the laminate film near the outer periphery of the adhesive film. If wrinkles occur in the laminate film near the outer periphery of the adhesive film, a kerf shift occurs when the adhesive film is singulated, which reduces visibility when picking up after singulation. According to this production method, it is possible to suppress wrinkles occurring in the base film, and thus it is possible to suppress the kerf shift when singulating and improve visibility when picking up after singulation. Therefore, according to this production method, it is possible to produce an inexpensive support member with a higher yield. In addition, since wrinkles in the base film can be suppressed, it is also possible to improve picking up properties after singulation. In other words, if there are many wrinkles, the tension cannot be secured properly during expansion in the die bonder, and the push-up tool (pin, etc.) cannot transmit the force to the adhesive film through the base film and the adhesive layer, and the individual chips cannot be peeled off. In contrast, by reducing wrinkles, sufficient tension can be secured during expansion, making it possible to stably pick up the chips.

[0009] In the above-mentioned method for producing a support member, in the bonding step, the laminate film may be bonded to the ring at a bonding speed of 25 mm / sec or less. In this case, it is possible to suppress wrinkles occurring in the laminate film near the outer periphery of the adhesive film. This makes it possible to suppress kerf shift during singulation and improve visibility during pick-up after singulation. In addition, by suppressing wrinkles, it is also possible to improve the pick-up ability itself after singulation. Therefore, according to this production method, it is possible to produce inexpensive support members with a higher yield.

[0010] In the above-mentioned method for producing a support member, in the laminating step, the laminate film may be laminated to the ring at a laminating speed of 10 mm / sec or more. In this case, it is possible to perform the laminating step while suppressing the generation of voids or wrinkles without significantly reducing the laminating speed of the laminate film, thereby improving production efficiency.

[0011] In the above-mentioned manufacturing method of the support member, in the bonding step, the laminate film may be bonded to the ring using a roller while being supported only by the ring. In this case, it is possible to manufacture the support member using a conventional device that bonds an adhesive film such as DAF to a wafer such as a silicon wafer. This conventional device is usually provided with a bonding table for adsorbing the wafer, but according to this manufacturing method, the laminate film can be bonded to the ring without removing the laminate film from the bonding table and adsorbing it. Therefore, it is possible to carry out the manufacturing method according to the present disclosure using the conventional device.

[0012] In the above-mentioned method for producing a support member, the laminate consisting of the base film and the adhesive layer may have at least one of a tensile strength of 15 MPa to 40 MPa and an elongation percentage of 300% to 700%. In this case, the laminate can be easily attached to the ring while the adhesive film is appropriately held.

[0013] In the above-mentioned method for producing a support member, the adhesive film may be composed of a pair of surface layers made of a cured product of a thermosetting resin composition and an intermediate layer disposed between the pair of surface layers. In this case, even if the adhesive film has a multilayer structure and is formed to be relatively thick, the warping of the adhesive film can be suppressed. By suppressing the warping in this way, according to this production method, it is possible to make the thickness of the adhesive film spreading in the planar direction more uniform, and to make the thickness of the produced support member more uniform. In this embodiment, the intermediate layer may be a polyimide layer or a metal layer. This makes it possible to obtain a support member having excellent strength and heat resistance. The thickness of the intermediate layer may be 50 μm or less. This makes it possible to make the support member thin without making it too thick, even if it has a multilayer structure.

[0014] The present disclosure relates to a method for manufacturing a semiconductor device. The manufacturing method is a method for manufacturing a semiconductor device using a support member manufactured by any of the above-mentioned methods for manufacturing a support member. In this case, it is possible to inexpensively form a semiconductor device using the inexpensively manufactured support member. Effect of the Invention

[0015] According to the present disclosure, it is possible to provide a method for manufacturing a support member that can produce inexpensive support members with a high yield, and a method for manufacturing a semiconductor device using a support member manufactured by the manufacturing method. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device using a support piece manufactured by a manufacturing method according to the present embodiment. [Diagram 2] 2(a) and 2(b) are plan views each showing a schematic example of the positional relationship between a first chip and a plurality of support pieces. [Diagram 3]FIG. 3(a) is a plan view showing one embodiment of a laminated film for forming a support piece, and FIG. 3(b) is a cross-sectional view of the laminated film taken along line bb in FIG. 3(a). [Figure 4] FIG. 4 is a cross-sectional view that typically illustrates a step of bonding a base film to an adhesive film for forming a support piece via an adhesive layer. [Diagram 5] 5(a) to 5(d) are cross-sectional views that typically show the process of producing the support piece. [Figure 6] FIG. 6 is a perspective view that typically illustrates a step of attaching the laminated film to a dicing ring. [Figure 7] 7(a) to 7(c) are cross-sectional views sequentially showing the steps of attaching an adhesive film such as a DAF to a wafer and a dicing ring frame in a conventional apparatus. [Figure 8] 8(a) to 8(c) are cross-sectional views sequentially showing the steps of attaching a laminate film to a dicing ring without a wafer being present, using the conventional apparatus shown in FIG. [Figure 9] FIG. 9 is a cross-sectional view showing a modified example of the laminated film. [Figure 10] FIG. 10 is a cross-sectional view showing a step of the method for manufacturing the semiconductor device shown in FIG. 1, illustrating a state in which a plurality of support pieces are arranged around the first chip on the substrate. [Figure 11] FIG. 11 is a cross-sectional view showing an example of a chip with an adhesive piece used in the method for manufacturing the semiconductor device shown in FIG. [Figure 12] 12 is a diagram showing a step of the method for manufacturing the semiconductor device shown in FIG. 1 subsequent to FIG. 10, and is a cross-sectional view typically showing a dolmen structure formed on a substrate. [Figure 13] FIG. 13 is a diagram showing the shapes of voids and wrinkles that occur in a laminated film. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and duplicated explanations will be omitted. Furthermore, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios of the drawings are not limited to the ratios shown. In this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or the corresponding methacrylate. "A or B" may include either A or B, or may include both.

[0018] In this specification, the term "layer" includes a structure having a shape formed over the entire surface as well as a structure having a shape formed on a portion of the surface when observed in a plan view. In addition, in this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. In addition, a numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively.

[0019] In this specification, the content of each component in the composition means the total amount of the multiple substances present in the composition when the composition contains multiple substances corresponding to each component, unless otherwise specified. In addition, the exemplified materials may be used alone or in combination of two or more types, unless otherwise specified. In addition, in the numerical ranges described in stages in this specification, the upper limit or lower limit of a certain numerical range may be replaced by the upper limit or lower limit of the numerical range of another stage. In addition, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced by the value shown in the examples.

[0020] (Semiconductor Device) Fig. 1 is a cross-sectional view showing one embodiment of a semiconductor device using a support piece manufactured by the manufacturing method according to this embodiment. As shown in Fig. 1, the semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first chip), a semiconductor chip 21 (second chip), a semiconductor chip 22, a semiconductor chip 23, a plurality of support pieces 30 (a plurality of support members), adhesive pieces 40 to 43, wires 45 to 48, and a sealing material 50. The support piece manufactured by the manufacturing method according to this embodiment may be used to manufacture other semiconductor devices.

[0021] The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 1, the thickness of the substrate 10 is, for example, 90 to 300 μm, and may be 90 to 210 μm.

[0022] The semiconductor chip 20 is, for example, a controller chip (hereinafter also referred to as "CTL"), and is disposed on the surface of the substrate 10. The semiconductor chip 20 is attached to the substrate 10 by an adhesive piece 40, and is electrically connected to the substrate 10 by a wire 45. The shape of the semiconductor chip 20 in a plan view is, for example, a rectangle (square or oblong). The length of one side of the semiconductor chip 20 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the semiconductor chip 20 is, for example, 10 to 150 μm, and may be 20 to 100 μm.

[0023] The semiconductor chip 21 is, for example, a memory chip, and is adhered onto the support piece 30 via the adhesive piece 41. As a result, the semiconductor chip 21 is disposed on the semiconductor chip 20. The adhesive piece 41 is sandwiched between the semiconductor chip 21 and the multiple support pieces 30. The semiconductor chip 21 has a size larger than the semiconductor chip 20 in a planar view. The shape of the semiconductor chip 21 in a planar view is, for example, a rectangle (square or oblong). The length of one side of the semiconductor chip 21 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the semiconductor chip 21 is, for example, 10 to 170 μm, and may be 20 to 120 μm. The semiconductor chips 22 and 23 are, for example, memory chips like the semiconductor chip 21, and are adhered onto the semiconductor chip 21 in order via the adhesive pieces 42 and 43. The length of one side of the semiconductor chips 22 and 23 may be the same as that of the semiconductor chip 21, and the thickness of the semiconductor chips 22 and 23 may also be the same as that of the semiconductor chip 21.

[0024] The support piece 30 is a member that is disposed around the semiconductor chip 20 on the surface of the substrate 10 and serves as a spacer that forms a space around the semiconductor chip 20. The support piece 30 is made of, for example, a cured product of a thermosetting resin composition. As shown in FIG. 2(a), two support pieces 30 (rectangular shape) may be disposed at positions separated from each other on both sides of the semiconductor chip 20, or as shown in FIG. 2(b), one support piece 30 (square shape, total of four) may be disposed at positions corresponding to the corners of the semiconductor chip 20. The length of one side of the support piece 30 in a plan view is, for example, 20 mm or less, and may be 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support piece 30 is, for example, 10 to 180 μm, and may be 20 to 120 μm.

[0025] In this embodiment, a dolmen structure is formed on the substrate 10 by the semiconductor chip 21, a plurality of support pieces 30, and an adhesive piece 41 located between the support pieces 30 and the semiconductor chip 21. In the semiconductor device 1 shown in FIG. 1, the semiconductor chip 20 is separated from the adhesive piece 41. By appropriately setting the thickness of the support piece 30, a space for the wire 45 that connects the upper surface of the semiconductor chip 20 to the substrate 10 can be secured. When the semiconductor chip 20 is flip-chip connected to an electrode on the substrate 10, the adhesive piece 41 may be configured to contact the upper surface of the semiconductor chip 20.

[0026] The wires 45-48 electrically connect the electrodes (not shown) on the surface of the substrate 10 to the semiconductor chips 20-23, respectively. The sealing material 50 fills the gap between the semiconductor chips 20 and 21, and seals the substrate 10 so as to entirely cover the semiconductor chips 21-23 and the wires 46-48. The sealing material 50 is, for example, an epoxy resin.

[0027] (How to make the support piece) Next, an example of a method for producing a support piece used in the above-mentioned semiconductor device etc. will be described. Note that the support piece 30 shown in Fig. 1 is a product after the thermosetting resin composition has hardened (cured product). On the other hand, the support piece produced by this production method is in a state before the thermosetting resin composition has completely hardened.

[0028] First, a laminated film 60 for forming a support piece shown in Fig. 3(a) and Fig. 3(b) is prepared. The laminated film 60 includes a base film 61, an adhesive layer 62, and an adhesive film 63 for forming a support piece. The base film 61 and the adhesive layer 62 are formed into, for example, a circular shape by punching or the like (see Fig. 3(a)). The adhesive film 63 is a film that is a material for forming the support piece 30. The adhesive film 63 is formed into a circular shape by punching or the like, and has a smaller diameter than the base film 61 and the adhesive layer 62 (see Fig. 3(a)).

[0029] The base film 61 is, for example, a polypropylene film (PP film) or a polyethylene film (PE film). The adhesive layer 62 is, for example, made of an ultraviolet-curing adhesive. That is, the adhesive layer 62 has a property that the adhesiveness decreases when irradiated with ultraviolet light. The base film 61 and the adhesive layer 62 constitute a first laminate 65 (see FIG. 4). The first laminate 65 is, for example, a dicing tape (DCT), and has at least one of a tensile strength of 15 MPa or more and 40 MPa or less and an elongation rate of 300% or more and 700% or less. The first laminate 65 can use a base film that is easy to stretch or a base film that is difficult to stretch depending on the application. When a base film that is easy to stretch is used, the first laminate 65 can have a tensile strength of 15 MPa or more and less than 30 MPa and an elongation rate of 600% or more and 700% or less. When a base film that is difficult to stretch is used, the first laminate 65 can have a tensile strength of 30 MPa or more and 40 MPa or less and an elongation rate of 300% or more and less than 600%.

[0030] The above-mentioned "tensile strength" and "elongation" can be calculated by the following method. First, a test piece is prepared by cutting it so that the test piece size is 10 mm in width and 50 mm in length with a chuck distance. The test equipment used is a tensile tester specified in JIS B7721 or an equivalent tensile tester. The test piece is then set in this test equipment and pulled at a speed of 300±30 mm / min, and the load and elongation until the test piece breaks are measured. From these measured values, the "tensile strength" and "elongation" are calculated based on the following formula. Tensile strength (MPa) = Strength at tape break (N) ÷ Tape cross-sectional area (mm 2 ) Elongation (%) = (length at break (mm) - initial length (50 mm)) ÷ initial length (50 mm)

[0031] The adhesive film 63 is made of, for example, a thermosetting resin composition. The thermosetting resin composition constituting the adhesive film 63 can go through a semi-cured (B stage) state and then become a completely cured (C stage) state by a subsequent curing process. The thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer (e.g., acrylic resin), and further contains an inorganic filler, a curing accelerator, and the like, as necessary. The details of the thermosetting resin composition constituting the adhesive film 63 will be described later.

[0032] The laminated film 60 can be produced, for example, by bonding a first laminate 65 having a base film 61 and an adhesive layer 62 on its surface with a second laminate 66 having a cover film 64 and an adhesive film 63 on its surface (see FIG. 4). The first laminate 65 is obtained through a process of forming an adhesive layer 62 on the surface of the base film 61 by coating, and a process of processing the base film 61 and the adhesive layer 62 into a predetermined shape (for example, a circle) by punching or the like. The second laminate 66 is obtained through a process of forming an adhesive film 63 on the surface of a cover film 64 (for example, a PET film or a polyethylene film) by coating, and a process of processing the adhesive film 63 into a predetermined shape (for example, a circle) by punching or the like. When using the laminated film 60, the cover film 64 is peeled off at an appropriate timing.

[0033] Next, as shown in (a) of FIG. 5, a ring frame 100 (ring) for dicing is attached to the laminated film 60. That is, the base film 61 is attached to the ring frame 100 via the adhesive layer 62, and the adhesive film 63 is disposed inside the ring frame 100. As shown in FIG. 6, the ring frame 100 is, for example, a substantially annular ring, and the outer periphery of the laminated body 65 including the base film 61 is attached to the ring frame 100 via the adhesive layer 62. This attachment is performed while pressing the ring frame 100 from one end 100a to the other end 100b with a pressing member such as a roller 120 (see FIG. 8(a)). The relative movement speed (attaching speed) of the roller 120 with respect to the ring frame 100 during this attachment may be, for example, 5 mm / sec or more, or 10 mm / sec or more. The relative movement speed of the roller 120 may be 40 mm / sec or less, or 25 mm / sec or less. Alternatively, the roller 120 may be fixed so as not to move horizontally (rotational movement is possible), and the ring frame 100 and the laminated film 60 may be configured to move relative to the roller 120. In this case, the relative movement speed of the roller 120 corresponds to the movement speed of the ring frame 100, etc.

[0034] During this attachment, the laminated film 60 consisting of the base film 61, the adhesive layer 62, and the adhesive film 63 is attached to the ring frame 100 with reduced tension so that it does not stretch too much. Specifically, the laminated film 60 is attached to the ring frame 100 with tension applied so that the elongation rate of the laminated film 60 when attached is greater than 100% and not more than 101%. More preferably, the laminated film 60 is attached to the ring frame 100 with tension applied so that the elongation rate of the laminated film 60 when attached is not more than 100.25%. The "elongation rate of the laminated film" referred to here is a value indicating the ratio of the length (diameter) of the laminated film after attachment to the length (diameter) of the laminated film before attachment being 100%.

[0035] Next, after the lamination of the laminated film 60 to the ring frame 100 is completed, as shown in (b) of Fig. 5, the adhesive film 63 is diced into individual pieces. This results in a large number of support pieces 63a being obtained from the adhesive film 63. Thereafter, the adhesive layer 62 is irradiated with ultraviolet light to reduce the adhesive force between the adhesive layer 62 and the support pieces 63a.

[0036] Next, when the irradiation of ultraviolet rays is completed, the base film 61 is expanded to separate the support pieces 63a from each other, as shown in (c) of Fig. 5. Then, as shown in (d) of Fig. 5, the support pieces 63a are pushed up by a push-up jig 111 to peel the support pieces 63a from the adhesive layer 62, and the support pieces 63a are picked up by suction with a suction collet 112. The adhesive film 63 before dicing or the support pieces 63a before picking up may be heated to allow the curing reaction of the thermosetting resin to proceed. The support pieces 63a are appropriately cured when picked up, so that excellent pick-up properties can be achieved.

[0037] Here, with reference to Fig. 7 and Fig. 8, the reason for attaching the first laminate 65 to the ring frame 100 at a predetermined attachment speed and elongation rate in the above-mentioned manufacturing method of the support piece 30 will be described. Fig. 7(a) to Fig. 7(c) are cross-sectional views sequentially showing the process of attaching an adhesive film such as DAF to a wafer and a dicing ring frame in a conventional apparatus. Fig. 8(a) to Fig. 8(c) are cross-sectional views sequentially showing the process of attaching a laminate film to a dicing ring frame in the absence of a wafer using the conventional apparatus shown in Fig. 7.

[0038] As shown in Fig. 7, the conventional apparatus 110 has a joining table 115 for placing a wafer W such as a silicon wafer. Then, as shown in Fig. 7(b), the wafer W is placed on the joining table 115, and then, as shown in Fig. 7(c), the dicing tape T is joined to the wafer W while being pressed by a roller 120. At this time, the upper surface of the wafer W and the upper surface of the ring frame 100 are substantially flush with each other, and the dicing tape T can be easily joined to the wafer W supported by the joining table 115.

[0039] However, as shown in FIG. 8, when the conventional device 110 is used to manufacture the support piece 30 without silicon, the bonding table 115 must be moved downward, for example, by about 10 mm from the normal position, as shown in FIG. 8(b), in order to avoid the influence of the adsorption function of the bonding table 115 (or to prevent an error indicating that the wafer W is not present on the bonding table 115). In this case, as shown in FIG. 8(c), when the laminated film 60 is attached to the ring frame 100 using a roller 120, a peel action occurs between the first laminate 65 including the base film 61 and the adhesive film 63 (particularly in the outer peripheral region S), and voids and wrinkles are likely to occur. In contrast, in the manufacturing method of the support piece according to the present embodiment, the laminated film 60 is attached to the ring frame 100 while suppressing the occurrence of voids and wrinkles between the first laminate 65 and the adhesive film 63 by performing attachment at the above-mentioned range of attachment speed and at the elongation rate (reducing the applied tension) during attachment of the laminated film 60. This makes it possible to prevent chips from flying off during pick-up and to improve visibility.

[0040] (Thermosetting resin composition constituting the adhesive film 63) Next, the thermosetting resin composition constituting the adhesive film 63 for forming the support piece 30 will be described in detail. As described above, this thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer, and further contains an inorganic filler and a curing accelerator, etc., as necessary. According to the study by the present inventors, it is preferable that the support piece 63a and the support piece 30 after curing have the following characteristics. Characteristic 1: When the support piece 30 is thermocompression-bonded to a predetermined position of the substrate 10, displacement is unlikely to occur (the melt viscosity of the support piece 30 at 120°C is, for example, 4300 to 50000 Pa·s or 5000 to 40000 Pa·s). Characteristic 2: The support piece 30 exhibits stress relaxation properties within the semiconductor device 1 (the thermosetting resin composition contains an elastomer (rubber component)). Characteristic 3: The adhesive strength of the chip with the adhesive piece to the adhesive piece 41 is sufficiently high (the die shear strength of the support piece 30 to the adhesive piece 41 is, for example, 2.0 to 7.0 MPa or 3.0 to 6.0 MPa). Property 4: Shrinkage rate during hardening is sufficiently small Characteristic 5: The support piece 63a is easily visible by a camera during the pick-up process (the thermosetting resin composition contains, for example, a coloring agent). Property 6: The support piece 30 has sufficient mechanical strength

[0041] [Epoxy resin] The epoxy resin is not particularly limited as long as it has an adhesive action when cured. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin can be used. In addition, generally known epoxy resins such as multifunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic epoxy resins, and alicyclic epoxy resins can be applied. These may be used alone or in combination of two or more.

[0042] [Hardening agent] Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Among these, phenolic resins are preferred from the viewpoint of achieving high die shear strength. Examples of commercially available phenolic resins include LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenylarakyl type phenolic resin) manufactured by Air Water Inc., Phenolite KA and TD series manufactured by DIC Corporation, Milex XLC-series and XL series (e.g., Milex XLC-LL) manufactured by Mitsui Chemicals Inc., HE series (e.g., HE100C-30) manufactured by Air Water Inc., MEHC-7800 series (e.g., MEHC-7800-4S) manufactured by Meiwa Kasei Co., Ltd., and JDPP series manufactured by JEF Chemical Co., Ltd. These may be used alone or in combination of two or more types.

[0043] From the viewpoint of achieving high die shear strength, the blending amounts of the epoxy resin and the phenol resin are preferably such that the equivalent ratio of the epoxy equivalent to the hydroxyl equivalent is 0.6 to 1.5, more preferably 0.7 to 1.4, and even more preferably 0.8 to 1.3. By having the blending ratio within the above range, it is easy to achieve both sufficiently high levels of curability and fluidity.

[0044] [Elastomer] Examples of the elastomer include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

[0045] From the viewpoint of achieving high die shear strength, acrylic resins are preferred as elastomers, and more preferably, acrylic resins such as epoxy group-containing (meth)acrylic copolymers obtained by polymerizing functional monomers having an epoxy group or a glycidyl group as a crosslinkable functional group, such as glycidyl acrylate or glycidyl methacrylate. Among the acrylic resins, epoxy group-containing (meth)acrylic acid ester copolymers and epoxy group-containing acrylic rubbers are preferred, and epoxy group-containing acrylic rubbers are more preferred. The epoxy group-containing acrylic rubber is a rubber having an epoxy group, mainly composed of an acrylic acid ester as a main component, and mainly composed of a copolymer of butyl acrylate and acrylonitrile, or the like, a copolymer of ethyl acrylate and acrylonitrile, or the like. The acrylic resin may have not only an epoxy group, but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group, or a carboxyl group.

[0046] Commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent-modified product (product name, acrylic rubber, weight-average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) manufactured by Nagase Chemtec Corporation.

[0047] The glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C, from the viewpoint of achieving high die shear strength. The weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000, from the viewpoint of achieving high die shear strength. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve of standard polystyrene. By using an acrylic resin with a narrow molecular weight distribution, there is a tendency that a highly elastic adhesive piece can be formed.

[0048] From the viewpoint of achieving high die shear strength, the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass, and more preferably 20 to 100 parts by mass, per 100 parts by mass of the epoxy resin and the epoxy resin curing agent in total.

[0049] [Inorganic filler] Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.

[0050] From the viewpoint of achieving high die shear strength, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 to 0.5 μm. From the viewpoint of achieving high die shear strength, the surface of the inorganic filler is preferably chemically modified. A silane coupling agent is suitable as a material for chemically modifying the surface. Examples of the types of functional groups of the silane coupling agent include vinyl groups, acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, and ethoxy groups.

[0051] From the viewpoint of achieving high die shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass, and more preferably 30 to 100 parts by mass, per 100 parts by mass of the resin component of the thermosetting resin composition.

[0052] [Cure accelerator] Examples of the hardening accelerator include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength, imidazole compounds are preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.

[0053] The content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass, and more preferably 0.04 to 0.2 parts by mass, per 100 parts by mass of the epoxy resin and the epoxy resin curing agent in total, from the viewpoint of achieving high die shear strength.

[0054] The adhesive film serving as the support piece 30 may be formed of a plurality of layers. FIG. 9 is a cross-sectional view showing a laminated film 60A according to a modified example. As shown in FIG. 9, the laminated film 60A has a base film 61, an adhesive layer 62, and an adhesive film 63A. The adhesive film 63A includes a pair of surface layers 66a, 66b made of any of the above-mentioned thermosetting resin compositions, and an intermediate layer 67 disposed between the pair of surface layers 66a, 66b. The thickness of the surface layers 66a, 66b is, for example, 5 to 60 μm, and may be 5 to 25 μm or 5 to 20 μm. The thickness of the intermediate layer 67 is, for example, 5 to 75 μm, and may be 10 to 75 μm or 10 to 50 μm. The tensile modulus of the intermediate layer 67 may be, for example, 8.0 MPa or more, 9.0 MPa or more, or 10.0 MPa or more. When the intermediate layer 67 has a tensile modulus of 8.0 MPa or more, the intermediate layer 67 functions like a spring plate in the step of picking up the support piece 63a (see FIG. 5(d)), and excellent pick-up performance can be achieved. The upper limit of the tensile modulus of the intermediate layer 67 is about 15 MPa in view of the ease of obtaining materials. The intermediate layer 67 is composed of, for example, a resin layer such as polyimide or polyethylene terephthalate (PET), or a metal layer. The intermediate layer 67 may be a layer composed of a thermosetting resin composition or a photocurable resin composition that has been subjected to a curing treatment so that the tensile modulus falls within the above range.

[0055] (Method of manufacturing a semiconductor device) Here, a method for manufacturing a semiconductor device 1 having a three-dimensional mounting structure using the support pieces 30 manufactured by the above-mentioned manufacturing method will be described with reference to Figs. 10 to 12. Fig. 10 is a diagram showing one step of the manufacturing method of the semiconductor device 1, and is a cross-sectional view showing a state in which a plurality of support pieces 30 are arranged around a semiconductor chip 20 on a substrate 10. Fig. 11 is a cross-sectional view showing an example of a chip with an adhesive piece used in the manufacturing method of the semiconductor device 1. Fig. 12 is a diagram showing one step of the manufacturing method of the semiconductor device 1 following Fig. 10, and is a cross-sectional view showing a schematic diagram of a dolmen structure formed on the substrate 10.

[0056] The method for manufacturing a semiconductor device according to this embodiment includes the following steps (A) to (G). (A) A step of preparing a plurality of support pieces 30 (see (a) to (d) in FIG. 5 ). (B) Step of placing the semiconductor chip 20 on the substrate 10 (C) A step of arranging a plurality of support pieces 30 around the semiconductor chip 20 on the substrate 10 (see FIG. 10). (D) A step of preparing an adhesive piece-attached chip 21a including a semiconductor chip 21 and an adhesive piece 41 provided on one surface of the semiconductor chip 21 (see FIG. 11). (E) A step of constructing a dolmen structure by placing adhesive chips 21a on the surfaces of a plurality of support pieces 30 (see FIG. 12). (F) stacking further semiconductor chips 22, 23 on top of semiconductor chip 21 (see FIG. 1) (G) A process of sealing the substrate 10 with a sealing material 50 so as to fill the gaps between the semiconductor chips 20 and 21 and to cover the semiconductor chips 21 to 23 and the wires 46 to 48 (see FIG. 1).

[0057] Steps (A) to (G) are processes for constructing a dolmen structure on a substrate 10 using a plurality of support pieces 30. In step (A), a predetermined number of support pieces 30 manufactured by the manufacturing method shown in Fig. 5 and the like are prepared. In step (A), the support pieces 30 may be manufactured by the manufacturing method shown in Fig. 5 and the like, or the manufactured support pieces 30 may be obtained.

[0058] [(B) Process] Step (B) is a step of placing the semiconductor chip 20 on the substrate 10. For example, first, the semiconductor chip 20 is mounted at a predetermined position on the substrate 10 via an adhesive piece 40. Thereafter, the semiconductor chip 20 is electrically connected to the substrate 10 by a wire 45.

[0059] [(C) Process] Step (C) is a step of arranging a plurality of support pieces 30 around the semiconductor chip 20 on the substrate 10. Through this step, a structure T shown in FIG. 10 is fabricated. The structure T includes the substrate 10, the semiconductor chip 20 arranged on the surface thereof, and a plurality of support pieces 30. The support pieces 30 may be arranged by a pressure bonding process. The pressure bonding process is preferably carried out, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. The support pieces 30 may be completely hardened support pieces at the time of step (C), or may not be completely hardened at this time. It is preferable that the support pieces 30 are completely hardened support pieces before the start of step (C).

[0060] [(D) Process] Step (D) is a step of preparing the chip with adhesive piece 21a shown in Fig. 11. The chip with adhesive piece 21a includes a semiconductor chip 21 and an adhesive piece 41 provided on one surface of the semiconductor chip 21. The chip with adhesive piece 21a can be obtained, for example, by using a semiconductor wafer and a dicing / die bonding integrated film, through a dicing step and a pick-up step.

[0061] [(E) Process] Step (E) is a step of arranging the chip 21a with adhesive pieces above the semiconductor chip 20 so that the adhesive pieces 41 contact the upper surfaces of the multiple support pieces 30. Specifically, the semiconductor chip 21 is pressure-bonded to the upper surfaces of the support pieces 30 via the adhesive pieces 41. This pressure-bonding process is preferably carried out for 0.5 to 3.0 seconds under conditions of, for example, 80 to 180°C and 0.01 to 0.50 MPa. Next, the adhesive pieces 41 are cured by heating. This curing process is preferably carried out for 5 minutes or more under conditions of, for example, 60 to 175°C and 0.01 to 1.0 MPa. This causes the adhesive pieces 41 to harden. Through this process, a dolmen structure is constructed on the substrate 10 (see FIG. 12).

[0062] [(F) Process] In step (F), the semiconductor chip 22 is placed on the semiconductor chip 21 via an adhesive piece 42, and further, the semiconductor chip 23 is placed on the semiconductor chip 22 via an adhesive piece 43. The adhesive pieces 42 and 43 may be made of a thermosetting resin composition similar to the adhesive pieces 40 and 41 described above, and become adhesive pieces by heat curing (see FIG. 1). Meanwhile, the semiconductor chips 21, 22, and 23 are electrically connected to the substrate 10 by wires 46 to 48, respectively. The number of chips stacked above the semiconductor chip 20 is not limited to three as in this embodiment, and can be set as appropriate.

[0063] [(G) Process] In step (G), the substrate 10 is sealed with a sealing material 50 so as to fill the gaps between the semiconductor chips 20 and 21 and to cover the semiconductor chips 21 to 23 and the wires 46 to 48 (see FIG. 1). The sealing material 50 contains, for example, an epoxy resin. Through this step, the semiconductor device 1 shown in FIG. 1 is completed.

[0064] As described above, in the manufacturing method of the support piece according to the present embodiment, the laminated film 60 is attached to the ring frame 100 while applying tension to the laminated film 60 so that the elongation rate of the laminated film 60 used to manufacture the support piece 30 when attached is greater than 100% and less than or equal to 101%. This reduces the tension applied to the laminated film 60, and the elongation force applied to the adhesive film 63 constituting the laminated film 60 along with the elongation of the laminated film 60 is also reduced, and when the laminated film 60 is attached to the ring frame 100, peeling of the adhesive film 63 from the base film 61 is reduced. Peeling is particularly likely to occur near the outer periphery of the base film 61 and the adhesive layer 62 and the adhesive film 63, but this manufacturing method reduces peeling of the adhesive film 63 from the base film 61. As a result, voids are less likely to occur between the laminate 65 including the base film 61 and the adhesive film 63. By reducing such voids, this manufacturing method makes it possible to suppress chip flying during individualization and manufacture inexpensive support members with a high yield.

[0065] In addition, in the manufacturing method of the support piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 while applying tension to the laminated film 60 so that the elongation rate of the laminated film 60 during attachment is 100.25% or less. In this case, the tension applied to the laminated film 60 is further reduced, so that it is possible to more reliably suppress wrinkles occurring in the laminate 65 near the outer periphery of the adhesive film 63. If wrinkles occur in the laminated film 60 near the outer periphery of the adhesive film 63, a kerf shift occurs when the adhesive film 63 is singulated, which reduces visibility when picking up after singulation. According to this manufacturing method, it is possible to suppress wrinkles occurring in the base film 61, and thus it is possible to suppress the kerf shift during singulation and improve visibility when picking up after singulation. Therefore, according to this manufacturing method, it is possible to manufacture an inexpensive support member with a higher yield. In addition, since wrinkles in the base film 61 can be suppressed, it is also possible to improve the pick-up property after singulation. That is, if there are many wrinkles, tension cannot be secured properly during expansion by the die bonder, and the push-up tool (such as a pin) cannot transmit force to the adhesive film 63 via the base film 61 and the adhesive layer 62, and the individualized chips cannot be peeled off. In contrast, by reducing wrinkles, sufficient tension can be secured during expansion, making it possible to stably pick up the chips.

[0066] In addition, in the manufacturing method of the support piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 so that the speed of attaching the laminated film 60 to the ring frame 100 is 25 mm / sec or less. In this case, it is possible to suppress wrinkles that occur in the laminate 65 near the outer periphery of the adhesive film 63. This makes it possible to suppress kerf shift during singulation and improve visibility during pick-up after singulation. In addition, by suppressing wrinkles, it is also possible to improve the pick-up ability itself after singulation. Therefore, according to this manufacturing method, it is possible to manufacture inexpensive support members with a higher yield.

[0067] In the manufacturing method of the support piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 at a speed of 10 mm / sec or more. In this case, it is possible to perform the attaching step while suppressing the occurrence of voids or wrinkles without significantly reducing the attaching speed of the laminated film 60, thereby improving manufacturing efficiency.

[0068] In addition, in the manufacturing method of the support piece according to this embodiment, the laminated film 60 may be attached to the ring frame 100 using the roller 120 while being supported only by the ring frame 100. In this case, it is possible to manufacture the support piece using a conventional apparatus 110 that attaches an adhesive film such as DAF to a wafer W such as a silicon wafer. The conventional apparatus 110 is usually provided with a bonding table 115 for adsorbing the wafer W, but according to this manufacturing method, the laminated film 60 can be attached to the ring frame 100 without removing the laminated film 60 from the bonding table 115 and adsorbing it. Therefore, it is possible to carry out this manufacturing method using a conventional apparatus.

[0069] In the manufacturing method of the support piece according to the present embodiment, the laminate 65 consisting of the base film 61 and the adhesive layer 62 may have at least one of a tensile strength of 15 MPa to 40 MPa and an elongation percentage of 300% to 700%. In this case, the laminate film 60 can be easily attached to the ring frame 100 while the adhesive film 63 is appropriately held.

[0070] In addition, in the manufacturing method of the support piece according to the present embodiment, the adhesive film 63A may be configured to include a pair of surface layers 66a, 66b made of a cured product of a thermosetting resin composition, and an intermediate layer 67 disposed between the pair of surface layers 66a, 66b. In this case, even if the adhesive film 63A has a multilayer structure and is formed to be relatively thick, the warping of the adhesive film 63A can be suppressed. By suppressing the warping in this manner, according to this manufacturing method, the thickness of the adhesive film spreading in the planar direction can be made more uniform, and the thickness of the manufactured support piece can be made more uniform. In this embodiment, the intermediate layer 67 may be a polyimide layer or a metal layer. This allows a support piece with excellent strength and heat resistance to be obtained. The thickness of the intermediate layer 67 may be 50 μm or less. This allows the support piece to be made thin without being made too thick even if it has a multilayer structure.

[0071] Although the embodiment of the present disclosure has been described in detail above, the present invention is not limited to the above embodiment. For example, in the above embodiment, the manufacturing method of the support piece 30 used in the semiconductor device with a dolmen structure has been described, but the support piece 30 may be used as a component of other semiconductor devices, and is not particularly limited. In addition, although the laminated film 60 having the ultraviolet-curing adhesive layer 62 has been exemplified, the adhesive layer 62 may be a pressure-sensitive type. EXAMPLES

[0072] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0073] In the following examples, a laminated film 60A having the configuration shown in Fig. 9 was attached to a ring frame, and the occurrence of voids and wrinkles between the laminate 65 and the adhesive film 63A was confirmed. The lamination device used here was a fully automatic wafer mounter DFM2800 manufactured by Disco Corporation. The ring frame had an outer diameter of 380 mm and an inner diameter of 350 mm.

[0074] The compounds used in each example are as follows:

[0075] (Laminate) As the laminate 65, two types of laminate A and laminate B were prepared.

[0076] <Preparation of Laminate A> A copolymer was obtained by solution radical polymerization using 78 parts by weight of 2-ethylhexyl acrylate, 20 parts by weight of 2-hydroxyethyl acrylate, and 2 parts by weight of methacrylic acid as raw materials and ethyl acetate as a solvent. Next, this acrylic copolymer was reacted with 8 parts by weight of 2-methacryloyloxyethyl isocyanate to synthesize a radiation-reactive acrylic copolymer having carbon-carbon double bonds. In the above reaction, 0.05 parts of hydroquinone monomethyl ether was used as a polymerization inhibitor. The weight-average molecular weight of the synthesized acrylic copolymer was measured by GPC and was found to be 800,000.

[0077] The acrylic copolymer thus obtained was mixed with 8.0 parts in terms of solid content of a polyisocyanate compound (Tosoh Corporation, product name: Coronate L) as a curing agent, and 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator to prepare a radiation-curable adhesive solution. Next, the radiation-curable adhesive solution obtained as described above was applied to a polyethylene terephthalate release film (thickness: 38 μm) and dried so that the thickness after drying would be 10 μm. Thereafter, a polyolefin film (thickness: 90 μm) that had been subjected to a corona discharge treatment on one side was bonded to the adhesive layer. The bonded sample was aged in a thermostatic chamber at 40° C. for 72 hours to produce laminate A.

[0078] <Preparation of Laminate B> The adhesive was prepared by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional monomers. The weight-average molecular weight of the synthesized acrylic copolymer was 400,000, and the glass transition point was -38°C. An adhesive solution was prepared by mixing 10 parts by weight of a multifunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation, product name: Mytech NY730A-T) with 100 parts by weight of the acrylic copolymer, and the solution was coated and dried on a surface-release-treated polyethylene terephthalate (thickness: 25 μm) so that the adhesive thickness when dried was 30 μm. Then, a three-layer polyolefin film (thickness: 80 μm) in which an ethylene-vinyl copolymer resin with corona discharge treatment on one side was sandwiched between polypropylene was bonded to the adhesive layer. The bonded sample was aged in a thermostatic chamber at 40°C for 72 hours to prepare a dicing adhesive sheet.

[0079] The tensile strength and elongation percentage of the laminate A and laminate B having the above-mentioned configuration were the values ​​shown in Table 1 below. [Table 1]

[0080] (Adhesive film) As described above, the adhesive film used was the three-layer adhesive film 63A shown in Fig. 9. The thermosetting resin composition constituting the surface layers 66a and 66b of the adhesive film 63A contained the following (a) to (h).

[0081] (Preparation of Varnish A) Varnish A for the film for forming the support strip was prepared using the following materials. (a) Epoxy resin: YDCN-700-10: (product name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25°C) 13.2 parts by mass (b) Phenol resin (curing agent): HE-100C-30: (trade name, manufactured by Air Water Inc., phenylaralkyl type phenol resin) 11.0 parts by mass (c) Inorganic filler: Aerosil R972: (product name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 μm) 7.8 parts by mass (d) Elastomer: SG-P3 solvent-change product (product name, Nagase ChemteX Corporation, acrylic rubber, weight-average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) 66.4 parts by mass (e) Coupling agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.4 parts by mass (f) Coupling agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 1.15 parts by mass (g) Curing accelerator: Curesol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass (h) Solvent: Cyclohexane

[0082] As described above, cyclohexanone was used as a solvent, and the solid content of varnish A was adjusted to 16% by mass. Varnish A was filtered through a 100-mesh filter and vacuum degassed. A polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to a release treatment was prepared as a film to which varnish A was applied. The varnish A after vacuum degassing was applied onto the release-treated surface of the PET film. The applied varnish A was heated and dried in two stages, at 90°C for 5 minutes and then at 140°C for 5 minutes. In this way, a thermosetting resin layer A in a B-stage state (semi-cured state) was produced on the surface of the PET film.

[0083] The intermediate layer 67 of the adhesive film 63A was made of polyimide (manufactured by Ube Industries, Ltd., trade name: Upilex 50SGA, thickness 50 μm).

[0084] Next, thermosetting resin layers 66a and 66b were prepared and laminated to both sides of intermediate layer 67 with a rubber roll on a hot plate at 70° C. to obtain adhesive film 63A, which was then laminated to laminate 65 with a rubber roll at room temperature to obtain laminate film 60A.

[0085] Tables 2 and 3 below show the evaluation results of lamination film 60A attached to ring frame 100 at a specified elongation rate and attachment speed. In the tests in Tables 2 and 3 below, laminate A and laminate B were used as laminate 65. Note that the "elongation rate of laminate film" here is a value indicating the elongation rate of the laminate film when attached to the ring frame, with the laminate film before being attached to the ring frame being taken as the reference (100%). Also, the attachment speed is the relative movement speed of the attachment roller when lamination film 60A is attached to the ring frame.

[0086] [Table 2] [Table 3]

[0087] In the above Tables 2 and 3, "Rating A" in the void test indicates that no voids were found. "Rating B" in the void test indicates that the maximum size of the voids that occurred after the laminate film was applied was within a range of 5 mm (see Figure 13). "Rating C" in the void test indicates that the maximum size of the voids that occurred after the laminate film was applied was 5 mm or more (see Figure 13).

[0088] In the wrinkle test in Tables 2 and 3, "Rating A" indicates a result where no wrinkles were found. "Rating C" indicates a result where many wrinkles were found and many voids were found in the laminate (dicing tape) attached to the ring frame (see Figure 13).

[0089] In the above Tables 2 and 3, "Rating A" in the dicing property test indicates that no chips were skipped during dicing. "Rating B" in the dicing property test indicates that several chips were skipped during dicing. "Rating C" in the dicing property test indicates that several dozen or more chips were skipped during dicing.

[0090] In Tables 2 and 3 above, the "Rating A" in the die bond visibility test indicates that no die bond recognition errors occurred. The "Rating C" in the die bond visibility test indicates that frequent die bond recognition errors occurred.

[0091] As is clear from the above test results, it was confirmed that voids can be reduced by attaching a laminate film to a ring frame while applying tension to the laminate film so that the elongation of the laminate film used to prepare the support piece is greater than 100% and less than or equal to 101%. It was also confirmed that wrinkles can be reduced by attaching a laminate film including a base film to a ring frame while applying tension to the laminate film so that the elongation of the laminate film used to prepare the support piece is less than or equal to 100.25%. It was also confirmed that voids and wrinkles can be reduced by slowing down the attachment speed to 25 mm / sec or less. [Explanation of symbols]

[0092] 1...semiconductor device, 10...substrate, 20...semiconductor chip (first chip), 21...semiconductor chip (second chip), 30...support piece (support member), 60, 60A...laminated film, 61...base material film, 62...adhesive layer, 63...adhesive film, 63a...support piece, 65...laminated body, 66a, 66b...surface layer, 67...intermediate layer, 100...ring frame (ring), 120...roller.

Claims

1. A step of preparing a laminated film in which an adhesive film is attached to a base film via an adhesive layer; Providing a ring for singulating the adhesive film; attaching the base film to the ring via the adhesive layer so that the adhesive film is disposed on the inside of the ring; and dividing the adhesive film of the laminated film attached to the ring into a plurality of support members, In the attaching step, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation of the laminated film is greater than 100% and less than or equal to 100.25%.

2. In the bonding step, the laminated film is bonded to the ring at a bonding speed of 25 mm / sec or less. A method for manufacturing the support member according to claim 1 .

3. In the bonding step, the laminated film is bonded to the ring at a bonding speed of 10 mm / sec or more. A method for producing the support member according to claim 1 or 2.

4. In the attaching step, the laminated film is attached to the ring using a roller while being supported only by the ring. A method for manufacturing a support member according to any one of claims 1 to 3.

5. The laminate consisting of the base film and the adhesive layer has at least one of a tensile strength of 15 MPa or more and 40 MPa or less and an elongation percentage of 300% or more and 700% or less. A method for manufacturing a support member according to any one of claims 1 to 4.

6. The adhesive film includes a pair of surface layers made of a cured product of a thermosetting resin composition, and an intermediate layer disposed between the pair of surface layers. A method for manufacturing a support member according to any one of claims 1 to 5.

7. The intermediate layer is a polyimide layer or a metal layer. A method for manufacturing the support member according to claim 6.

8. The thickness of the intermediate layer is 50 μm or less. A method for producing the support member according to claim 6 or 7.

9. A method for manufacturing a semiconductor device, comprising the steps of: manufacturing a semiconductor device by using a support member manufactured by the method for manufacturing a support member according to any one of claims 1 to 8.

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