Semiconductor Module

Abstract

To provide a semiconductor module in which a power route and a signal route can be surely electrically insulated.SOLUTION: A semiconductor module 10 houses a semiconductor element 30 and a heat dissipation member 40 by a resin member 9. At least a part of the heat discharge member 40 is exposed to an external part from the resin member 9. A signal pad 35 of the semiconductor element 30 and a signal terminal 61 are connected by a flexible substrate as a wiring member 80. The wiring member 80 is housed in a resin member 20, and is a member softer than the signal terminal 61. The wiring member 80 includes: electric insulation resin layers 81 and 83; and a metal layer 82 supported by resin layers 81 and 83.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The disclosure herein relates to semiconductor modules. [Background technology]

[0002] Patent Document 1 discloses a semiconductor module housing a semiconductor element including a switching element. This semiconductor module includes a wiring sheet. The wiring sheet is formed of a flexible printed circuit board. The wiring sheet of Patent Document 1 includes a land portion that solders together an electrode and a terminal as a power path of the switching element. Furthermore, the wiring sheet of Patent Document 1 includes a control wiring that is connected to a control electrode of the switching element. The contents of the prior art documents are incorporated by reference as explanations of the technical elements in this specification. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-86659 A Summary of the Invention [Problem to be solved by the invention]

[0004] The wiring sheet of Patent Document 1 has difficulty in electrically insulating the power path and the control wiring. For this reason, it has been difficult to provide a semiconductor module that meets practical standards in terms of electrical insulation and size. In the above-mentioned respects and other respects not mentioned, further improvements are required for the semiconductor module.

[0005] One disclosed object is to provide a semiconductor module in which electrical isolation between power paths and signal paths is reliably provided. [Means for solving the problem]

[0006] The semiconductor module disclosed herein comprises: a semiconductor element (30) having a signal pad (35) for a signal path and power pads (33, 34) for a power path for power larger than the power of the signal pad; a heat dissipation member (40) thermally joined to the semiconductor element (30); a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member; a metallic signal terminal (61) arranged so as to be exposed from the resin member; and a wiring member (80) housed in the resin member and which is a member softer than the signal terminal, which includes an electrically insulating resin layer and a metal layer supported by the resin layer, and which has a first joint portion (80a) where the metal layer is connected to the signal pad and a second joint portion (80b) where the signal terminal is connected. The wiring member further includes bonding members (71, 73) that bond between the semiconductor element and the heat dissipation member and / or between the signal pad and the metal layer, and the wiring member defines an opening that surrounds the bonding member and has a recess (86) that communicates with the opening. The semiconductor module disclosed herein comprises a semiconductor element (30) having a signal pad (35) for a signal path and power pads (33, 34) for a power path for power greater than the power of the signal pad, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member, a metal signal terminal (61) arranged so as to be exposed from the resin member, and a wiring member (80) housed in the resin member and which is a member softer than the signal terminal, which includes an electrically insulating resin layer and a metal layer supported by the resin layer, the wiring member (80) having a first joint (80a) where the metal layer is connected to the signal pad and a second joint (80b) where the metal layer is connected to the signal terminal, and the wiring member (B80) positions the semiconductor element and the heat dissipation member. The semiconductor module disclosed herein includes a semiconductor element (30) having a signal pad (35) for a signal path and power pads (33, 34) for a power path for power larger than the power of the signal pad, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member, a metal signal terminal (61) arranged to be exposed from the resin member, and a wiring member (80) housed in the resin member and which is a member softer than the signal terminal, including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint portion (80a) connected to the signal pad and a second joint portion (80b) connected to the signal terminal, and further includes a pair of power terminals (51a, 51b) electrically connected to the power pads, the wiring member (C80) reaching between the pair of power terminals, and the pair of power terminals being positioned in a layered manner so as to overlap both sides of the wiring member. do.

[0007] The disclosed semiconductor module accommodates a semiconductor element inside a resin member. Furthermore, the semiconductor module includes a metallic signal terminal arranged so as to be exposed from the resin member. The signal pad of the semiconductor element and the signal terminal are connected inside the resin member by a wiring member. The wiring member is accommodated in the resin member. The wiring member is a member that is softer than the signal terminal. The wiring member includes an electrically insulating resin layer and a metal layer supported by the resin layer. The wiring member has a first joint portion where the metal layer is connected to the signal pad, and a second joint portion where the metal layer is connected to the signal terminal. The semiconductor module provides high connection workability by including the signal terminal. Moreover, even within the resin member, the wiring member can improve the connection workability of the signal path. The wiring member including an electrically insulating resin layer contributes to electrical insulation between the power path and the signal path. As a result, a semiconductor module is provided in which electrical insulation between the power path and the signal path is assured. The various embodiments disclosed in this specification employ different technical means to achieve their respective objectives. The claims and the parenthetical symbols described in this section are merely illustrative of the corresponding relationship with the embodiments described below, and are not intended to limit the technical scope. The objectives, features, and effects disclosed in this specification will become more apparent by referring to the following detailed description and the accompanying drawings. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a block diagram of an electric power system according to a first embodiment. [Diagram 2] FIG. 2 is an external perspective view of a semiconductor module. [Diagram 3] FIG. 2 is a schematic cross-sectional view of a semiconductor module. [Figure 4] FIG. 4 is a partial cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 11 is a perspective view of a semiconductor module according to a second embodiment. [Figure 6] FIG. 11 is a partial cross-sectional view of a semiconductor module according to a third embodiment. [Figure 7] FIG. 13 is a perspective view of a semiconductor module according to a fourth embodiment. [Figure 8] FIG. 13 is a perspective view of a semiconductor module according to a fifth embodiment. [Figure 9] FIG. 13 is a cross-sectional view of a semiconductor module according to a sixth embodiment. [Figure 10] FIG. 13 is a cross-sectional view of a semiconductor module according to a seventh embodiment. [Figure 11] FIG. 13 is a plan view of a wiring member according to an eighth embodiment. [Figure 12] FIG. 13 is a plan view of a wiring member according to a ninth embodiment. [Figure 13] FIG. 23 is a plan view of a wiring member according to a tenth embodiment. [Figure 14] FIG. 23 is a cross-sectional view of a semiconductor module according to an eleventh embodiment. [Figure 15] FIG. 23 is a cross-sectional view of a semiconductor module according to a twelfth embodiment. [Figure 16]FIG. 2 is an exploded perspective view showing a semiconductor module. [Figure 17] FIG. 23 is a cross-sectional view of a semiconductor module according to a thirteenth embodiment. [Figure 18] FIG. 23 is an enlarged cross-sectional view of a semiconductor module according to a fourteenth embodiment. [Figure 19] FIG. 23 is a cross-sectional view of a semiconductor module according to a fifteenth embodiment. [Figure 20] FIG. 23 is a cross-sectional view showing a joining step in the sixteenth embodiment. [Figure 21] FIG. [Figure 22] FIG. 22 is a cross-sectional view showing a joining step in the seventeenth embodiment. [Figure 23] FIG. 22 is a cross-sectional view showing a joining step in the eighteenth embodiment. [Figure 24] FIG. 23 is a cross-sectional view of a semiconductor module according to a nineteenth embodiment. [Diagram 25] FIG. 20 is a cross-sectional view of a semiconductor module according to a twentieth embodiment. [Figure 26] FIG. 21 is a plan view of a semiconductor module according to a twenty-first embodiment. [Figure 27] FIG. 22 is a plan view of a wiring member according to a twenty-second embodiment. [Figure 28] FIG. 23 is a plan view of a wiring member according to a twenty-third embodiment. [Figure 29] FIG. 24 is a perspective view of a wiring member according to a twenty-fourth embodiment. [Diagram 30] FIG. 25 is a cross-sectional view of a semiconductor module according to a twenty-fifth embodiment. [Diagram 31] FIG. 2 is a partial cross-sectional view of a semiconductor module. [Diagram 32] FIG. 26 is a cross-sectional view of a semiconductor module according to a twenty-sixth embodiment. [Diagram 33] FIG. 2 is a cross-sectional view of a semiconductor module. [Diagram 34] FIG. 27 is a cross-sectional view of a semiconductor module according to a twenty-seventh embodiment. [Diagram 35] FIG. 28 is a cross-sectional view of a semiconductor module according to a twenty-eighth embodiment. [Diagram 36] FIG. 29 is a cross-sectional view of a semiconductor module according to a twenty-ninth embodiment. [Figure 37] FIG. 30 is a cross-sectional view of a semiconductor module according to a 30th embodiment. [Figure 38] FIG. 31 is a cross-sectional view of a semiconductor module according to a thirty-first embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] A number of embodiments will be described with reference to the drawings. In a number of embodiments, functionally and / or structurally corresponding and / or associated parts may be given the same reference numerals or reference numerals with different digits of 100 or more. For corresponding and / or associated parts, reference may be made to the description of other embodiments.

[0010] First embodiment In FIG. 1, the electric system 1 includes a power supply device 2, a rotating electric machine (RM) 3, and a power conversion circuit 4. The power supply device 2 is a chargeable and dischargeable DC power supply. The power supply device 2 may be provided by a DC power supply including a lithium ion battery, a fuel cell system, or a solar cell system. The power supply device 2 is also provided by a power generation system that generates power using a power source such as an internal combustion engine. The rotating electric machine 3 is provided by an electric motor or a motor generator. The rotating electric machine 3 is a polyphase AC rotating electric machine. In the illustrated example, the rotating electric machine 3 is a three-phase rotating electric machine. The rotating electric machine 3 is used as a power source for a moving object, or as a power source for machines such as a generator and a pump. Here, the moving object includes a vehicle, an aircraft, a ship, amusement ride-on equipment, and a vehicle simulation device.

[0011] The power conversion circuit 4 is electrically connected to the power supply device 2 and the rotating electric machine 3. The power conversion circuit 4 converts at least one element of power between the power supply device 2 and the rotating electric machine 3. The element of power includes a current direction, DC / AC, voltage, current, phase, etc. The power conversion circuit 4 is capable of operation in a powering direction in which power is supplied from the power supply device 2 to the rotating electric machine 3, and / or a regenerative direction in which power is charged from the rotating electric machine 3 to the power supply device 2. In this embodiment, the power conversion circuit 4 provides at least bidirectional voltage conversion and bidirectional DC / AC conversion.

[0012] The power conversion circuit 4 includes a converter circuit 5, a smoothing capacitor 6, an inverter circuit 7, and a control device 8. The power conversion circuit 4 may further include an inductive element and / or a capacitive element that provide a filter circuit. The converter circuit 5 is electrically arranged between the power supply device 2 and the rotating electric machine 3. The converter circuit 5 provides bidirectional voltage conversion. The converter circuit 5 may step up or step down the voltage output by the power supply device 2 and output it to the outside. The converter circuit 5 steps up or step down the voltage supplied from the outside and supplies it to the power supply device 2. The inverter circuit 7 is electrically arranged between the power supply device 2 and the rotating electric machine 3. The inverter circuit 7 is electrically arranged between the converter circuit 5 and the rotating electric machine 3. The inverter circuit 7 provides bidirectional DC / AC conversion. The inverter circuit 7 provides DC to AC conversion when power is supplied from the power supply device 2 to the rotating electric machine 3. The inverter circuit 7 provides AC to DC conversion when power is supplied from the rotating electric machine to the power supply device 23. The smoothing capacitor 6 is disposed between the converter circuit 5 and the inverter circuit 7. The smoothing capacitor 6 serves as a part of a filter circuit that smoothes the DC power.

[0013] The inverter circuit 7 includes a plurality of switching elements 10 (SW elements 10), a plurality of power lines 50, and a plurality of signal lines 60. The plurality of SW elements 10 include, for example, SW elements 11 and 12 for the U phase, SW elements 13 and 14 for the V phase, and SW elements 15 and 16 for the W phase. The plurality of SW elements 10, together with the power line 50, form a multi-phase bridge circuit. The multi-phase bridge circuit forms a plurality of switching arms 18, the number of which corresponds to the number of phases. For example, the U-phase switching arm includes SW element 11 providing an upper arm and SW element 12 providing a lower arm. The V-phase switching arm includes SW element 13 providing an upper arm and SW element 14 providing a lower arm. The W-phase switching arm includes SW element 15 providing an upper arm and SW element 16 providing a lower arm.

[0014] The multiple power lines 50 include a positive line 52 and a negative line 54. The positive line 52 and the negative line 54 are also called a pair of DC bus lines. Furthermore, the power lines 50 include a connection line 56 and a phase line 58. The connection line 56 connects a SW element providing an upper arm and a SW element providing a lower arm. The phase line 58 connects the connection line 56 and one phase winding of the rotating electric machine 3. Thus, the inverter circuit 7 includes multiple switching arms 18 arranged between a pair of DC bus lines. The multiple signal lines 60 are electrically connected to the multiple SW elements 10, respectively. The signal line 60 may include a drive signal line for switching the SW element 10 and multiple detection signal lines for current value, temperature, and the like.

[0015] The converter circuit 5 may also include a switching arm. In this case, the converter circuit 5 is configured as a chopper circuit including an inductance element.

[0016] The multiple SW elements 10 have the same or similar configurations. One SW element 10 includes a semiconductor element 30. The semiconductor element 30 is a currently or future available semiconductor made of Si, SiC, or the like. The semiconductor element 30 includes a transistor element 31 and a diode element 32. The transistor element 31 is a currently or future available element capable of switching control in response to a control signal, such as an IGBT element (Insulated-Gate Bipolar Transistor) or a MOS-FET element (Metal-Oxide-Semiconductor Field-Effect Transistor). The diode element 32 is a reverse-connected diode. One SW element 10 may include one transistor element or multiple transistor elements connected in series and / or parallel.

[0017] One SW element 10 is also called one semiconductor module 10 or a semiconductor package. The semiconductor module 10 is provided by sealing at least one SW element 10 with a resin member 20 described below. The semiconductor module 10 may be provided by sealing one switching arm 18 with the resin member 20. In this case, the semiconductor module 10 has a plurality of signal terminals exposed to the outside, a pair of power terminals exposed to the outside, and one power terminal that provides a phase wire 58. Furthermore, one semiconductor module 10 may house a plurality of switching arms 18.

[0018] The control device 8 is configured with an electric circuit. The control device 8 controls the converter circuit 5 and the inverter circuit 7. The control device 8 is electrically connected to the converter circuit 5 and the inverter circuit 7. The control device 8 and the inverter circuit 7 are connected by a plurality of signal lines 60. The control device 8 generates and outputs a control signal for controlling at least the inverter circuit 7.

[0019] The control device 8 in this specification may also be referred to as an electronic control unit (ECU). The control device 8 or control system is provided by (a) an algorithm as a plurality of logics called an if-then-else format, or (b) an algorithm as a trained model tuned by machine learning, for example, a neural network.

[0020] The control device 8 is provided by a control system including at least one computer. The control system may include several computers linked by data communication devices. The computer includes at least one processor that is hardware (hardware processor). The hardware processor may be provided by (i), (ii) or (iii) below.

[0021] (i) The hardware processor may be at least one processor core 8a (CPU) that executes a program stored in at least one memory 8b (MMR). In this case, the computer is provided with at least one memory and at least one processor core. The processor core is called a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), a RISC-CPU, etc. The memory is also called a storage medium. The memory is a non-transitive and tangible storage medium that non-temporarily stores "programs and / or data" that can be read by the processor. The storage medium is provided by a semiconductor memory, a magnetic disk, an optical disk, or the like. The program may be distributed alone or as a storage medium on which the program is stored.

[0022] (ii) The hardware processor may be a hardware logic circuit. In this case, the computer is provided by a digital circuit including a large number of programmed logic units (gate circuits). The digital circuit is also called a logic circuit array, for example, ASIC: Application-Specific Integrated Circuit, FPGA: Field Programmable Gate Array, SoC: System on a Chip, PGA: Programmable Gate Array, CPLD: Complex Programmable Logic Device, etc. The digital circuit may include a memory that stores programs and / or data. The computer may be provided by an analog circuit. The computer may be provided by a combination of digital and analog circuits.

[0023] (iii) The hardware processor may be a combination of (i) and (ii) above. (i) and (ii) may be located on different chips or on a common chip. In these cases, the (ii) part may also be called an accelerator.

[0024] The controller, the signal source and the controlled object provide various elements, at least some of which may be referred to as blocks, modules or sections. Furthermore, the elements contained in the control system are referred to as functional means only if this is the case.

[0025] The semiconductor module 10 will be described in detail below with reference to several drawings. In the drawings and the description of the specification referred to below, the dimensions of the thickness, width, height, length, etc. of the several components are illustrated and described in a schematic manner to facilitate understanding of the relative arrangement of the several components and their mutual positional relationships. The thickness in the X direction of the first joint member 71 described later can be set to about 0.2 millimeters as a non-limiting example. The dimensions of each part should be understood to have a numerical range that can be understood as self-evident to those skilled in the current and future semiconductor technology fields. In addition, three axial directions are illustrated in some drawings. The X direction is called the thickness direction, the Y direction is called the width direction, and the Z direction is called the height direction. These names do not reflect the posture of the semiconductor module 10 in use. These names should be understood as being for convenience.

[0026] In FIG. 2, the semiconductor module 10 has a flat, plate-like outer shape. The outer shape is mainly defined by a resin member 20. The resin member 20 is a member obtained by forming a molten resin material into a required shape using a mold and then hardening it again. A non-limiting example of the resin member 20 is epoxy resin. The semiconductor module 10 seals the semiconductor element 30 with the resin member 20. The semiconductor element 30 is a semiconductor chip. The semiconductor element 30 is a plate-like member.

[0027] The semiconductor module 10 has at least a pair of power terminals 51 exposed to the outside of the resin member 20. The pair of power terminals 51 includes a P terminal on the positive electrode side and an N terminal on the negative electrode side. The semiconductor module 10 has a plurality of signal terminals 61 exposed to the outside of the resin member 20. In addition to the pair of power terminals 51, the semiconductor module 10 may have a power terminal as an input / output end of a switching arm. The power terminals 51 and the signal terminals 61 can be clearly distinguished from each other by the difference in the power flowing therethrough. The power terminal 51 passes power for the rotating electric machine 3 as a controlled object. On the other hand, the signal terminal 61 passes power at the level of a control signal for the semiconductor element 30 and the transistor element 31, or a signal for the control device 8.

[0028] The power terminal 51 and the signal terminal 61 are partially embedded inside the resin member 20, and the remaining portions are exposed to the outside of the resin member 20. The power terminal 51 is provided by a metal plate material such as copper or iron. The signal terminal 61 is provided by a metal plate material such as copper or iron. The power terminal 51 and the signal terminal 61 are provided by a metal plate so-called a lead frame. The power terminal 51 and the signal terminal 61 extend from the outer peripheral edge portion of the semiconductor module 10, or from any of the four side surfaces of the outer periphery when viewed as a plate. The power terminal 51 and the signal terminal 61 have a hardness that allows them to maintain their shape in a room temperature environment.

[0029] Furthermore, the semiconductor module 10 has a heat dissipation member 40 exposed to the outside of the resin member 20. The heat dissipation member 40 is thermally coupled to the semiconductor element 30. The semiconductor module 10 is air-cooled or liquid-cooled. The semiconductor module 10 has at least one heat dissipation member 40 for dissipating heat from the semiconductor element 30. The semiconductor module 10 may be arranged with the exposed surface of the heat dissipation member 40 in contact with a coolant pipe. In this case, the semiconductor module 10 indirectly dissipates heat from the heat dissipation member 40 to the coolant pipe. The semiconductor module 10 may be arranged in a coolant passage. In this case, the semiconductor module 10 directly dissipates heat to the coolant from the contact surface with the coolant (including the heat dissipation member 40).

[0030] The heat dissipation member 40 has two heat dissipation members 41 and 42 exposed on both sides of the semiconductor module 10. The heat dissipation member 41 may be called a first heat dissipation member. The heat dissipation member 42 may be called a second heat dissipation member. In this case, the semiconductor module 10 is called a double-sided heat dissipation package. The semiconductor module 10 may be disposed between two cooling liquid pipes with the exposed surface of the first heat dissipation member 41 in contact with one cooling liquid pipe and the exposed surface of the second heat dissipation member 42 in contact with the other cooling liquid pipe. The semiconductor module 10 indirectly dissipates heat from one plate-like surface of the semiconductor element 30 to the cooling liquid pipe via the first heat dissipation member 41. The semiconductor module 10 indirectly dissipates heat from the other plate-like surface of the semiconductor element 30 to the cooling liquid pipe via the second heat dissipation member 42. The semiconductor module 10 may be disposed in a passage of the cooling liquid. In this case, the semiconductor module 10 dissipates heat directly into the coolant from the contact surface with the coolant (including the two heat dissipation members 41, 42).

[0031] The semiconductor module 10 includes a wiring member 80. The wiring member 80 provides at least one signal path. The wiring member 80 is also called a wiring sheet. The wiring member 80 is housed in a resin member 20. The wiring member 80 is plate-shaped. The wiring member 80 includes an electrically insulating resin layer and a metal layer supported by the resin layer. The wiring member 80 includes one metal layer or multiple metal layers. The thickness of the wiring member 80 is equal to or less than the thickness of the first joint member 71. The wiring member 80 spreads almost parallel to the YZ plane so as to intersect with the thickness direction X. The wiring member 80 is a member that is more flexible than the signal terminal 61. Due to its flexibility, the wiring member 80 may be arranged in a slightly bent shape.

[0032] The wiring member 80 electrically connects the signal pads of the semiconductor element 30 and the signal terminals 61. The wiring member 80 is positioned and fixed by the bonding at the bonding portions 80a and 80b and the contact with the resin member 20. In the illustrated example, the wiring member 80 is completely embedded in the resin member 20 and is not exposed to the outside. The wiring member 80 may be provided by a flexible printed circuit board (FPC). The wiring member 80 may be provided by a single-sided FPC, a double-sided FPC, or a multi-layer FPC. The resin layer may be provided by, for example, polyimide resin, liquid crystal polymer resin (LPC), or the like, but is not limited thereto. The metal layer may be provided by, for example, copper foil, silver paste, or the like, but is not limited thereto.

[0033] The wiring member 80 allows various arrangements, such as close together, dispersed, and detouring, for one metal layer. The wiring member 80 also allows various variations in the area of ​​the metal layer. Furthermore, the wiring member 80 provides stable electrical insulation between the electrical connection provided by the wiring member 80 and other adjacent members by the resin layer. In a typical example, one wiring member 80 includes multiple metal layers. The multiple metal layers provide multiple electrical connections between multiple signal pads and multiple signal terminals 61. In this case, the wiring member 80 allows for a reduction in process time in the manufacturing stage for providing multiple electrical connections. In addition, in this case, the wiring member 80 provides stable electrical insulation between multiple electrical connections. The wiring member 80 allows for the metal layers to be arranged via various paths inside the wiring member 80. The wiring member 80 allows various arrangements, such as crossing, connecting, and branching, for the multiple metal layers. Furthermore, the positional relationship between the multiple metal layers is fixedly held by the resin layer. As a result, there is less variation in mutual coupling inductance between signal paths compared to wire bonding, and the wiring member 80 contributes to stable operation of the semiconductor element 30.

[0034] FIG. 3 shows a cross section of the semiconductor module 10 in the XZ plane. In the semiconductor module 10, the resin member 20 accommodates the semiconductor element 30. The semiconductor element 30 is bonded to the heat dissipation member 40 on both sides thereof by bonding members 70. The bonding members 70 have a flat polygonal columnar shape. The bonding members 70 have a columnar shape with a slightly trapezoidal cross section. This bonding provides electrical connection and thermal coupling. The semiconductor element 30 has a power pad 33 on a first surface, which is the upper surface in the figure. The power pad 33 provides a path for the main power controlled by the semiconductor element 30. The power pad 33 is bonded to the first heat dissipation member 41 by a first bonding member 71. The semiconductor element 30 has a power pad 34 on a second surface, which is the lower surface in the figure. The power pad 34 provides a path for the main power controlled by the semiconductor element 30. The power pad 34 is bonded to the second heat dissipation member 42 by a second bonding member 72. The power pads 33, 34 may be called by names indicating their uses, such as power electrodes, collector electrodes, emitter electrodes, etc. The joining member 70 can be provided by a material known as solder.

[0035] The heat dissipation member 40 has a flat plate-like shape. The heat dissipation member 40 provides high thermal conductivity (more precisely, heat transfer coefficient) between both sides thereof. The heat dissipation member 40 is also called a terminal member that provides a power path. The heat dissipation member 40 provides high electrical insulation between both sides thereof. The heat dissipation member 40 is also called an electrically insulating substrate. The heat dissipation member 40 includes an electrically insulating resin plate disposed between a pair of metal plates.

[0036] The first heat dissipation member 41 includes an external metal plate 43 that provides a heat dissipation surface, and an internal metal plate 45 that provides a joint surface. The internal metal plate 45 provides a part of the power path. The internal metal plate 45 is electrically joined to one terminal that provides a power line 50. At least a part of the surface of the external metal plate 43 is exposed to the outside from the resin member 20. One surface of the external metal plate 43 provides a heat dissipation surface. The first heat dissipation member 41 includes a resin plate 44 that serves as an electrical insulating layer and is disposed between the external metal plate 43 and the internal metal plate 45.

[0037] The second heat dissipation member 42 includes an external metal plate 46 that provides a heat dissipation surface, and an internal metal plate 48 that provides a joint surface. The internal metal plate 48 provides a part of the power path. The internal metal plate 48 is electrically joined to one terminal that provides a power line 50. At least a part of the surface of the external metal plate 46 is exposed to the outside from the resin member 20. One surface of the external metal plate 46 provides a heat dissipation surface. The second heat dissipation member 42 includes a resin plate 47 that serves as an electrical insulating layer and is disposed between the external metal plate 46 and the internal metal plate 48.

[0038] The semiconductor element 30 has signal pads 35 on the first surface. The signal pads 35 are arranged on the outer edge of the semiconductor element 30 so that the power pads 33 having a relatively large area can be formed on the first surface. The signal pads 35 have a current-carrying area that is clearly smaller than those of the power pads 33 and 34. In a typical example, the semiconductor element 30 has a plurality of signal pads 35. The signal pads 35 may be called by names indicating their uses, such as signal electrodes, sensor electrodes, and gate electrodes.

[0039] The wiring member 80 is positioned away from the heat dissipation member 40. The wiring member 80 may be disposed in contact with the surface of the semiconductor element 30. The signal pad 35 and the signal terminal 61 are electrically connected by the wiring member 80. The wiring member 80 is disposed inside the resin member 20 so as to bridge between the signal pad 35 and the signal terminal 61. The wiring member 80 has a resin layer 81 made of an electrically insulating resin material. The wiring member 80 has a resin layer 83 made of an electrically insulating resin material. The resin layer 81 and the resin layer 83 may be made of a continuous resin material. The wiring member 80 may be coated with an electrically insulating insulating film on the outside of the resin layers 81 and 83. The insulating film contributes to increasing the electrical insulation between the wiring member 80 and other components.

[0040] The wiring member 80 has a metal layer 82 disposed between a resin layer 81 and a resin layer 83. The metal layer 82 is disposed on the wiring member 80 in a form that can be called a line or ribbon shape. The metal layer 82 is made of metal. The metal layer 82 may also be called a current-carrying member or a signal line for signal transmission. The metal layer 82 is disposed continuously from one end to the other end.

[0041] The wiring member 80 includes a first joint portion 80a for enabling electrical connection between the metal layer 82 and the signal pad 35. The second joint portion 80b is provided at one end of the metal layer 82. The wiring member 80 includes a second joint portion 80b for enabling electrical connection between the metal layer 82 and the signal terminal 61. The second joint portion 80b is provided at the other end of the metal layer 82. The first joint portion 80a and the second joint portion 80b are partitioned by a window portion formed in the resin layers 81 and 83. The window portion exposes a part of the metal layer 82 from the resin layers 81 and 83. The first joint portion 80a and the second joint portion 80b may be understood as a part of the metal layer 82. In the first joint portion 80a, the signal pad 35 of the semiconductor element 30 and one end of the metal layer 82 are electrically connected by the third joint member 73. In the second joint portion 80b, the other end of the metal layer 82 and the signal terminal 61 are electrically connected by a fourth joint member 74.

[0042] FIG. 4 is a partial cross-sectional view taken along line IV-IV in FIG. 3 in a state where the resin member 20 has been removed. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are arranged in a layered manner in the X direction. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are parallel to each other. The heat dissipation member 40 and the semiconductor element 30 are arranged parallel to each other so as to overlap each other. The semiconductor element 30 and the wiring member 80 are arranged parallel to each other so as to overlap only at the first joint portion 80a. The wiring member 80 and the signal terminal 61 are arranged parallel to each other so as to overlap only at the second joint portion 80b. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are plate-shaped. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are arranged so that the surfaces of the plates are parallel to the YZ plane. Therefore, the signal terminal 61 extends from the side surface of the resin member 20 in parallel to the YZ plane.

[0043] The semiconductor element 30 is disposed on and bonded to the second heat dissipation member 42. The power pads 33 of the semiconductor element 30 are bonded to the first heat dissipation member 41 (not shown) by a first bonding member 71. The semiconductor element 30 has a plurality of signal pads 35. In the drawing, the power pads 33 and the signal pads 35 are represented by rectangular shapes. The pads of the semiconductor element 30 can be provided in various shapes such as circles, ellipses, rounded polygons, and polygons.

[0044] The signal pads 35 are arranged apart from one another on the outer edge of the upper surface of the semiconductor element 30. The signal pads 35 are arranged in a row along the outer edge. The signal pads 35 may be arranged at corners of the upper surface of the semiconductor element 30. The signal pads 35 may be arranged in a dispersed manner to form multiple groups on the upper surface of the semiconductor element 30. The signal pads 35 are arranged with a pad pitch Pp. The pad pitch Pp is the minimum pad pitch of the signal pads 35. The signal pads 35 are arranged within a range of a width Wp.

[0045] The multiple signal terminals 61 have a shape that can be called an elongated rod shape or ribbon shape. The multiple signal terminals 61 are arranged parallel to one another. The multiple signal terminals 61 are arranged with one end aligned in a straight line. The multiple signal terminals 61 may have different thicknesses. The multiple signal terminals 61 may have different lengths. The multiple signal terminals 61 are arranged with a terminal pitch Pi. The terminal pitch Pi is the minimum terminal pitch of the multiple signal terminals 61. The multiple signal terminals 61 are arranged within a range of a width Wi.

[0046] The terminal pitch Pi is equal to or greater than the pad pitch Pp (Pi≧Pp). In the illustrated example, the terminal pitch Pi is greater than the pad pitch Pp (Pi>Pp). The terminal pitch Pi and the pad pitch Pp are different. There is a difference Dp (Dp=Pi-Pp) between the terminal pitch Pi and the pad pitch Pp. The terminal pitch Pi and the pad pitch Pp may be equal.

[0047] The width Wi is equal to or greater than the width Wp (Wi≧Wp). In the illustrated example, the width Wi is greater than the width Wp (Wi>Wp). The width Wi and the width Wp are different. There is a difference Dw between the width Wi and the width Wp (Dw=Wi-Wp). The width Wi and the width Wp may be equal.

[0048] The wiring member 80 is disposed between the signal pad 35 and the signal terminal 61. The wiring member 80 is disposed so as to bridge the signal pads 35 and the signal terminals 61. The wiring member 80 has resin layers 81, 83 and a metal layer 82. The wiring member 80 has a plurality of metal layers 82 that are electrically independent from each other. Each of the plurality of metal layers 82 electrically connects each of the plurality of signal pads 35 to each of the plurality of signal terminals 61. The plurality of metal layers 82 are insulated from other members by the resin layers 81, 83 in portions other than the bonding portions 80a, 80b.

[0049] The wiring member 80 includes a first joint portion 80a for connecting the metal layer 82 and the signal pad 35. The first joint portion 80a is formed by exposing the metal layer 82 from the resin layer 81 and / or the resin layer 83. The first joint portion 80a is formed by a window portion defined in the resin layer 81 and / or the resin layer 83 and an exposed portion of the metal layer 82 exposed in the window portion. The window portion is an opening of a predetermined area in the resin layer 81 and / or the resin layer 83. The exposed portion has an area and shape that allows it to be bonded to the signal pad 35.

[0050] The wiring member 80 includes a second joint portion 80b for connecting the metal layer 82 and the signal terminal 61. The second joint portion 80b is formed by exposing the metal layer 82 from the resin layer 81 and / or the resin layer 83. The second joint portion 80b is formed by a window portion defined in the resin layer 81 and / or the resin layer 83 and an exposed portion of the metal layer 82 exposed in the window portion. The window portion is an opening of a predetermined area in the resin layer 81 and / or the resin layer 83. The exposed portion has an area and shape that allows it to be bonded to the signal terminal 61.

[0051] The layout path of the multiple metal layers 82 in the wiring member 80 is set to provide electrical connection while allowing for the difference Dp and / or difference Dw. The width over which the multiple metal layers 82 are laid is such that the width Wi on the signal terminal 61 side is wider than the width Wp on the signal pad 35 side. The shape of the wiring member 80 is also set to provide electrical connection while allowing for the difference Dp and / or difference Dw. The width of the wiring member 80 itself is such that the width of the end on the signal terminal 61 side is wider than the width of the end on the signal pad 35 side.

[0052] The shapes of the metal layers 82 in the YZ plane are almost parallel to each other. However, the shapes of the metal layers 82 in the YZ plane are formed so as to absorb the difference between the width Wi and the width Wp by changing the distance between the metal layers 82. The shapes of the metal layers 82 are set so as to change the distance between them. The distance between the metal layers 82 can also be called the metal layer pitch. The metal layer pitch is equal to the terminal pitch Pi on the signal terminal 61 side. The metal layer pitch is equal to the pad pitch Pp on the signal pad side. The metal layer pitch decreases from the terminal pitch Pi to the pad pitch Pp. In the illustrated example, the metal layer pitch changes in a stepwise manner. Alternatively, the metal layer pitch may change gradually.

[0053] The manufacturing method of the semiconductor module 10 includes a preparation step of preparing a plurality of components. The preparation step is a step of preparing the main components. The preparation step includes a step of preparing a material for the resin member 20 before molding, the semiconductor element 30, the heat dissipation member 40, a lead frame providing the power terminals 51, a lead frame providing the signal terminals 61, a bonding member 70, and a wiring member 80.

[0054] The manufacturing method of the semiconductor module 10 includes a bonding step of electrically and / or thermally and mechanically bonding a plurality of components. The bonding step includes a semiconductor bonding step of bonding the heat dissipation member 40 and the semiconductor element 30 with bonding members 71 and 72. The semiconductor bonding step includes a first bonding member step of bonding the first heat dissipation member 41 and the semiconductor element 30 with a first bonding member 71. The semiconductor bonding step includes a second bonding member step of bonding the second heat dissipation member 42 and the semiconductor element 30 with a second bonding member 72. The first bonding member step and the second bonding member step may be performed after the second bonding member step. The first bonding member step and the second bonding member step may be performed after the first bonding member step. The first bonding member step and the second bonding member step may be performed simultaneously.

[0055] The bonding step includes a power terminal bonding step of bonding the heat dissipation member 40 and the power terminal 51. The bonding step includes a signal path bonding step of connecting the signal pad 35 and the signal terminal 61 via the wiring member 80. The signal path bonding step includes a third bonding member step of bonding the signal pad 35 and the wiring member 80 with a third bonding member 73. The signal path bonding step includes a fourth bonding member step of bonding the signal terminal 61 and the wiring member 80 with a fourth bonding member 74. The third bonding member step and the fourth bonding member step can be performed simultaneously. The third bonding member step and the fourth bonding member step can be performed in numerical order or in reverse numerical order. The semiconductor bonding step and the signal path bonding step can be performed simultaneously. Furthermore, the power terminal bonding step can be performed simultaneously with these.

[0056] For example, when solder is used as the bonding member 70, the semiconductor bonding step, the power terminal bonding step, and the signal path bonding step can be performed by a temporary heating step in which the solder is melted and rehardened. For example, at least the second bonding member step and the third bonding member step, and / or at least the second bonding member step and the fourth bonding member step may be simultaneously performed by a temporary heating step. In this case, in a placement step preceding the heating step, the second heat dissipation member 42, the second bonding member 72, and the semiconductor element 30 are placed in a layered manner. In the placement step, the signal pad 35, the third bonding member 73, and the first bonding portion 80a are placed in a layered manner. Furthermore, in the placement step, the signal terminal 61, the fourth bonding member 74, and the second bonding portion 80b are placed in a layered manner. In the heating step, the bonding members 72, 73, and 74 are melted, so that the bonding between the semiconductor element 30 and the second heat dissipation member 42 and the bonding of the wiring member 80 can be performed simultaneously. In the arrangement step, the semiconductor element 30, the first bonding member 71, and the first heat dissipation member 41 may be arranged in a layered manner. In this case, the bonding members 71, 72, 73, and 74 are melted simultaneously in the heating step. The bonding step is performed so as to bond all of the bonding points. The bonding step includes a hardening step of hardening the bonding members. The bonding step bonds a plurality of members together.

[0057] The manufacturing method of the semiconductor module 10 includes a resin molding step of encasing the intermediate product joined in the joining step with the resin member 20. The resin molding step is performed so that the resin member penetrates into the gaps between the components of the intermediate product to provide the intended electrical insulation. The resin molding step is a step of exposing the heat dissipation member 40, the power terminals 51, and the signal terminals 61, and molding the resin member 20 so as to cover the semiconductor element 30. The resin molding step includes an arrangement step of arranging the multiple components after joining in a molding die. The resin molding step includes an injection step of injecting the molten resin member 20 into the molding die. The resin molding step includes a hardening step of hardening the molten resin member 20. The resin molding step includes an ejection step of ejecting the molded product from the molding die. The resin molding step further includes a finishing step including a step of cutting the lead frame and a step of removing burrs from the resin.

[0058] According to the embodiment described above, the wiring member 80 provides electrical connection between the signal pads 35 of the semiconductor element 30 and the signal terminals 61. The wiring member 80 enables an easy joining process. Moreover, the wiring member 80 itself has electrical insulation properties due to the resin layers 81, 83. Therefore, the wiring member 80 improves the reliability of electrical insulation between the metal layer 82 and other members. When the wiring member 80 has multiple metal layers 82, it improves the reliability of electrical insulation between the multiple metal layers 82.

[0059] Furthermore, the wiring member 80 is wrapped, fixed, and supported by the resin member 20. This prevents foreign matter from entering the inside of the semiconductor module 10 from the outside. Foreign matter includes liquids such as water, corrosive gases, and the like. In other words, the wiring member 80 and the resin member 20 provide high sealing properties.

[0060] Second embodiment This embodiment is a modification based on the preceding embodiment. In the above embodiment, the signal pads 35 are distributed along one short side of the semiconductor element 30. Instead, this embodiment employs a plurality of signal pads 235 concentrated in a portion of the semiconductor element 30. It is desirable for the semiconductor element 30 to have a relatively large active area that is active as a switching element. A relatively large active area enables control of a large current. This embodiment provides a semiconductor element 30 that can have a relatively large active area.

[0061] FIG. 5 shows a perspective view of the components with the resin member 20 and the first heat dissipation member 41 removed. The semiconductor element 30 is plate-like with a rectangular surface. The semiconductor element 30 is substantially square. The semiconductor element 30 has a plurality of signal pads 235 in a rectangular region near the corner of the outer edge of the surface. The signal pads 235 are concentrated in the rectangular region. The signal pads 235 are arranged in a row along the outer edge of the surface. The signal pads 235 are arranged with a pad pitch Pp2 in the row direction. The pad pitch Pp2 is smaller than the pad pitch Pp in the preceding embodiment. The pad pitch Pp2 is set to a value that can be called fine compared to the size of the semiconductor element 30.

[0062] The wiring member 80 has a plurality of first bonding portions 80a and a plurality of second bonding portions 80b. Each of the plurality of first bonding portions 80a is bonded to each of the plurality of signal pads 235. Thus, the plurality of signal pads 35 are arranged to form a pad pitch Pp2 in the row direction. The plurality of second bonding portions 80b are arranged to form a terminal pitch Pi in the row direction. Each of the plurality of second bonding portions 80b is bonded to each of the plurality of signal terminals 61. The plurality of metal layers 82 are arranged to expand the fine pad pitch Pp2 to the terminal pitch Pi. The plurality of metal layers 82 are laid in a meandering manner between the first bonding portions 80a and the second bonding portions 80b.

[0063] The wiring member 80 has an outer edge portion 284 arranged along the outer edge of the surface of the semiconductor element 30 on which the signal pads 235 are not arranged. The outer edge portion 284 is arranged along the longitudinal direction of the outer edge. The outer edge portion 284 is arranged on the outer edge of three of the four outer edges of the surface of the semiconductor element 30 on which the signal pads 235 are not arranged. As a result, the wiring member 80 is arranged on the surface of the semiconductor element 30 so as to surround the power pad 33 for passing the main current. In other words, the wiring member 80 is arranged so as to surround the first bonding member 71. The wiring member 80 defines an opening 285. The outer edge portion 284 is formed only by the resin layer 81 or the resin layer 83. The outer edge portion 284 may include a metal layer 82. The outer edge portion 284 facilitates positioning of the wiring member 80 with respect to the semiconductor element 30. As a result, even with a fine pad pitch Pp2, the signal pads 235 and the first bonding portions 80a can be accurately and easily positioned. The outer edge 284 improves electrical insulation on the outer periphery of the semiconductor element 30. The wiring member 80 improves electrical insulation between members such as electrodes serving as power paths of the semiconductor element 30 and portions such as electrodes serving as signal paths. The outer edge 284 may define the shape of the first bonding members 71.

[0064] The fine pad pitch Pp2 allows the area occupied by the signal pads 235 to be relatively small. As a result, the area occupied by the bonding member 70 in the semiconductor element 30 and / or the area of ​​the active region for passing current can be relatively large. In the illustrated example, the active region extends to a range in which the first bonding member 71 is disposed. The active region extends so as to be adjacent to all four sides of the semiconductor element 30. One side of the semiconductor element 30 is shared by the range occupied by the signal pads 235 and the range occupied by the active region. The range occupied by the signal pads 235 is 2 / 3 or less, or 1 / 2 or less, of one side of the semiconductor element 30. From one point of view, the fine pad pitch Pp2 allows the area occupied by the bonding member 70 on the surface of the semiconductor element 30 to be increased, thereby suppressing the current density and / or improving the heat transfer. From another point of view, by increasing the size of the active region in the semiconductor element 30, it is possible to reduce the size of the semiconductor element 30 and / or reduce costs by reducing the element size.

[0065] Third embodiment This embodiment is a modification based on the preceding embodiment. In the above embodiment, one semiconductor module 10 includes one semiconductor element 30. Alternatively, one semiconductor module 10 can include two or more semiconductor elements. This embodiment is an example of a case where multiple semiconductor elements are included. This embodiment provides a semiconductor module 10 that houses multiple semiconductor elements 30 arranged in parallel or in series.

[0066] In FIG. 6, the semiconductor module 10 has two semiconductor elements 30a and 30b arranged in a stacked manner on the second heat dissipation member 42. The two semiconductor elements 30a and 30b have the same shape or similar shapes. The two semiconductor elements 30a and 30b are arranged rotationally symmetrically on the second heat dissipation member 42. In this embodiment, the two semiconductor elements 30a and 30b are arranged in parallel in the power path. The semiconductor element 30a has a power pad 33a and a plurality of signal pads 35a. The semiconductor element 30a and the bonding member 71a are arranged in a stacked manner. The semiconductor element 30b has a power pad 33b and a plurality of signal pads 35b. The semiconductor element 30b and the bonding member 71b are arranged in a stacked manner.

[0067] The two semiconductor elements 30a, 30b may be arranged in series in the power path. For example, one of the semiconductor elements 30a, 30b may be an upper arm, and the other of the semiconductor elements 30a, 30b may be a lower arm. In this case, one semiconductor module 10 provides one switching arm 18.

[0068] The wiring member 80 is provided by the wiring member 380. The wiring member 380 includes a plurality of first junctions 80a for the semiconductor element 30a. The wiring member 380 includes a plurality of first junctions 80a for the semiconductor element 30b. Furthermore, the wiring member 380 includes a common second junction 80b for the plurality of semiconductor elements 30a, 30b. In this embodiment, the plurality of metal layers 82 include an independent metal layer 382a and a common metal layer 382c. The independent metal layer 382a is bonded to only one of the plurality of signal pads 35a, 35b. The common metal layer 382c is commonly bonded to one signal pad 35a of the semiconductor element 30a and one signal pad 35b of the semiconductor element 30b. The metal layers 382a, 382c are bonded to the signal terminal 61 at the second junctions 80b.

[0069] The signal terminals 61 include a dedicated signal terminal 61a for the semiconductor element 30a only, a dedicated signal terminal 61b for the semiconductor element 30b only, and a signal terminal 61c common to the semiconductor elements 30a and 30b. For example, the dedicated signal terminals 61a and 61b are used as sensor terminals for the temperature, current, and the like of the semiconductor elements 30a and 30b. The common signal terminal 61c is used as a gate terminal for driving the semiconductor elements 30a and 30b at the same timing, and the like. In the illustrated example, the dedicated signal terminals 61a and 61b are arranged on both sides of the row of the signal terminals 61, and the common signal terminal 61c is arranged in the center of the row of the signal terminals 61.

[0070] The wiring member 80 includes an independent metal layer 382a and a common metal layer 382c, thereby enabling dedicated connections and common connections to be provided within the wiring member 80. The wiring member 80 can accommodate different arrangements of the multiple signal pads 35a, 35b by changing the laying pattern of the multiple metal layers 82. Furthermore, the wiring member 80 can change the arrangement of the dedicated signal terminals 61a, 61b and the common signal terminal 61c by changing the laying pattern of the multiple metal layers 82.

[0071] Fourth embodiment This embodiment is a modification of the preceding embodiment as a basic form. This embodiment is an example of a case in which a plurality of semiconductor elements are provided. One semiconductor module 10 includes a plurality of semiconductor elements 30a, 30b, 30c, and 30d.

[0072] 7, four semiconductor elements 30a, 30b, 30c, and 30d are stacked in parallel on the second heat dissipation member 42. The multiple semiconductor elements 30 have the same or similar shapes. The multiple semiconductor elements 30 are arranged such that the signal pads 35 are located on one side of the second heat dissipation member 42. The multiple semiconductor elements 30 are distributed in a lattice pattern.

[0073] The wiring member 80 is provided by the wiring member 480. The wiring member 480 has an area that extends over the multiple semiconductor elements 30a, 30b, 30c, and 30d. The wiring member 480 has an outer edge portion 484 and an opening portion 485. The outer edge portion 484 extends in a lattice shape. As a result, the wiring member 480 has four opening portions 485. Each of the four opening portions 485 opens at a position corresponding to each of the four semiconductor elements 30. The opening portion 485 provides an opening through which the first bonding member 71 passes.

[0074] The wiring member 480 has a plurality of metal layers 82. The plurality of metal layers 82 include a dedicated metal layer 82a and a common metal layer 82c. The metal layer 82 is laid to bypass the semiconductor element 30, and thereby extends continuously between the first bonding portion 80a and the second bonding portion 80b.

[0075] Fifth embodiment This embodiment is a modification of the preceding embodiment as a basic form. This embodiment is an example of a case in which a plurality of semiconductor elements are provided. One semiconductor module 10 includes a plurality of semiconductor elements 30a, 30b, 30c, and 30d.

[0076] 8, four semiconductor elements 30a, 30b, 30c, and 30d are arranged in a square. Moreover, the four semiconductor elements 30a, 30b, 30c, and 30d are arranged rotationally symmetrically with respect to the central axis AXC. Each of the multiple semiconductor elements 30 has a signal pad 35 positioned at a corner. The multiple semiconductor elements 30 are arranged such that the signal pad 35 is positioned near the central axis AXC.

[0077] The wiring member 80 is provided by the wiring member 580. The wiring member 580 has a metal layer 82c. The wiring member 580 has four first joints 80a. The wiring member 580 has a second joint 80b connected to a common terminal member. The metal layer 82c has a portion extending between the second joint 80b and the central axis AXC, and a plurality of branch portions extending radially from the central axis AXC and reaching the first joint 80a. The common metal layer 82c provides a common electrical connection to the plurality of semiconductor elements 30a, 30b, 30c, and 30d. The common metal layer 82c provides signal paths of approximately equal length from the second joint 80b to the plurality of signal pads 35. Approximately equal length means that the electrical characteristics are approximately equal, or that even if there is a difference, the difference is approximately negligible due to the nature of the signal. For example, the signal pad 35 can be a pad for a drive signal such as a gate signal. In this case, the difference between the drive signals applied to the multiple semiconductor elements 30 can be reduced.

[0078] Sixth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is positioned away from the heat dissipation member 40. Instead, in this embodiment, the wiring member 680 is arranged in contact with both the semiconductor element 30 and the first heat dissipation member 41. Furthermore, the wiring member 680 includes a recess 86. The recess 86 functions as a volume adjustment portion for adjusting the volume of the first joint member 71 to an appropriate amount for joining the power pad 33 of the semiconductor element 30 and the first heat dissipation member 41. The recess 86 is provided by a recess 686. This embodiment provides a semiconductor module 10 that can stabilize the size of the first joint member 71.

[0079] In FIG. 9, the semiconductor module 10 includes a semiconductor element 30 disposed between the first heat dissipation member 41 and the second heat dissipation member 42. The semiconductor module 10 includes a wiring member 680. The wiring member 80 is provided by the wiring member 680. The wiring member 680 is positioned between the semiconductor element 30 and the first heat dissipation member 41. The wiring member 680 is disposed in contact with both the semiconductor element 30 and the first heat dissipation member 41. The wiring member 680 electrically connects between the signal pad 35 of the semiconductor element 30 and the signal terminal 61. The wiring member 680 has resin layers 81 and 83. Each of the resin layers 81 and 83 is formed by an assembly in which a plurality of resin layers are arranged in a laminated manner. Note that the resin layers 81 and 83 may be formed by a single resin layer formed by a continuous resin material.

[0080] The wiring member 680 has an outer edge portion 684 disposed along the edge of the first joint member 71. The outer edge portion 684 surrounds the first joint member 71 in the YZ plane. As a result, the outer edge portion 684 defines an opening 685 that defines the position and maximum range of the first joint member 71 in the YZ plane. The wall surface of the opening 685 may form a minute gap between the first joint member 71 and the opening 685, and may come into contact with the first joint member 71. When the wall surface of the opening 685 comes into contact with the first joint member 71, the opening 685 defines the range of the first joint member 71.

[0081] The wiring member 680 includes a recess 686. The recess 686 opens in a wall surface that defines the opening 685. The recess 686 is formed by a cutout that penetrates at least one of the multiple resin layers that form the resin layers 81 and 83. Thus, the recess 686 has a thickness in the X direction that corresponds to at least one resin layer. In the illustrated embodiment, the recess 686 is provided by the resin layer that is located at the end of the multiple resin layers. Thus, the recess 686 also opens in an end surface in the X direction (thickness direction) of the wiring member 680. The recess 686 defines an extension chamber that communicates with the opening 685. The recess 686 provides a side wall of the extension chamber. The wall surface of the extension chamber in the X direction is provided by another resin layer. The recess 686 is positioned only in a part of the wall surface of the opening 685. The recess 686 has a shape that can also be called a cutout portion of the wiring member 680. The recess 686 expands the volume of the opening 685 only in a portion of the YZ plane. The recess 686 expands the volume of the opening 685 only in a portion of the XZ plane. The volume expansion chamber defined by the recess 686 may accommodate an excess portion of the first joint member 71. The excess portion of the first joint member 71 flows into the recess 686 as if being pushed out or by its own fluidity, hardens, and remains in the recess 686. In the figure, an excess portion 675 remaining in the recess 686 is shown.

[0082] When a large number of semiconductor modules 10 are manufactured, there are products in which the volume expansion chamber accommodates the excess portion 675 of the first bonding member 71 and products in which the volume expansion chamber does not accommodate the excess portion 675 of the first bonding member 71. When an excessive amount of the first bonding member 71 is present in the opening 685, the volume expansion chamber functions as a relief capacity for absorbing the excess amount of the first bonding member 71.

[0083] The recess 686 is arranged so as to define an expansion volume chamber by a part of the surface of the first heat dissipation member 41. The recess 686 is positioned adjacent to the first heat dissipation member 41. The recess 686 is provided only in a part of the multiple resin layers. In the illustrated example, the recess 686 is provided only in the resin layer closest to the first heat dissipation member 41. As a result, one surface of the expansion volume chamber provided by the recess 686 is defined by the first heat dissipation member 41. The recess 686 is provided so as not to reach the metal layer 82. The recess 686 is formed so as to maintain a good electrical insulation state between the first joint member 71 and the metal layer 82. The recess 686 is provided so as to provide a predetermined electrical insulation distance from the metal layer 82.

[0084] The wiring member 680 has a thickness TF1. The thickness TF1 is the thickness at which the wiring member 80 contacts the surface of the semiconductor element 30 and the first heat dissipation member 41. The thickness TF1 defines the thickness of the first joint member 71 and is equal to the thickness of the first joint member 71.

[0085] The manufacturing method of the semiconductor module 10 includes a first bonding step of bonding the first heat dissipation member 41 and the semiconductor element 30 with a first bonding member 71. The manufacturing method includes a placement step prior to the first bonding step. In the placement step, the first heat dissipation member 41, the wiring member 680, and the semiconductor element 30 are placed in a layered configuration. At this time, the first bonding member 71 before bonding (before melting and re-hardening) is placed in the opening 685. The first bonding member 71 in the placement step has a thickness equal to or thicker than the thickness TF1.

[0086] After the placement step, a first bonding step is performed. In the first bonding step, the first bonding member 71 melts and flows. In the first bonding step, the first bonding member 71 bonds the first heat dissipation member 41 and the semiconductor element 30, and hardens again. In the first bonding step, the thickness of the first bonding member 71 changes in the process of melting and hardening again. In many cases, the thickness of the first bonding member 71 decreases from before the bonding step to after the bonding step. Furthermore, in the first bonding step, pressure may be applied in a direction that brings the first heat dissipation member 41 and the semiconductor element 30 closer to each other. This pressure also reduces the thickness of the first bonding member 71.

[0087] In the first bonding step, the wiring member 680 comes into contact with the first heat dissipation member 41 and the semiconductor element 30. At the same time, the opening 685 suppresses the flow of the first bonding member 71. In the process in which the first bonding member 71 melts and hardens again, if there is an excess of the first bonding member 71, the distance between the first heat dissipation member 41 and the semiconductor element 30 may not be stable. At this time, the excess portion of the first bonding member 71 is pushed out toward the recess 686. The excess portion of the first bonding member 71 may flow into the recess 686 without being pushed out. The excess portion of the first bonding member 71 remains in the recess 686 as the excess portion 675 by hardening again. As a result, the excess portion 675 is held in the recess 686. It can be said that the recess 686 provides an escape volume for the first bonding member 71.

[0088] At this time, the recess 686 is adjacent to the first heat dissipation member 41. Therefore, the excess portion 675 contacts the first heat dissipation member 41, contributing to providing a wide joint cross-sectional area. Providing a wide joint cross-sectional area enhances the heat transfer in the first joint member 71 and enables suppression of the current density.

[0089] Furthermore, there are cases where gas components are mixed in the first bonding members 71 during the bonding process, or where gas components are generated when the first bonding members 71 melt. These gas components may flow into the recesses 686. The gas components may generate voids inside the hardened first bonding members 71 again. The flow of the gas components into the recesses 686 may suppress the generation of voids in the first bonding members 71. It can be said that the recesses 686 provide an escape volume for the gas components during the bonding process.

[0090] In this embodiment, the volume provided by the recess 686 is provided as an additional volume to the standard volume for the first bonding member 71 provided by the opening 685. As a result, when the first bonding member 71 is about to overflow from the standard volume, the first bonding member 71 flows into the additional volume provided by the recess 686. Even after the first bonding member 71 hardens again, the first bonding member 71 may remain in the additional volume provided by the recess 686. As a result, an appropriate volume of the first bonding member 71 remains in the standard volume provided by the opening 685. The first bonding member 71 remaining in the opening 685 provides an appropriate bonding state between the semiconductor element 30 and the first heat dissipation member 41. For example, the recess 686 suppresses tilting between the semiconductor element 30 and the first heat dissipation member 41, unstable bonding, and unintended leakage of the first bonding member 71.

[0091] In this embodiment, the entire wiring member 680 has the thickness TF1. Alternatively, the wiring member 680 may be configured to have the thickness TF1 only in a portion located between the semiconductor element 30 and the first heat dissipation member 41. For example, the wiring member 680 may be configured to have a thickness smaller than the thickness TF1 in a portion arranged to bridge between the semiconductor element 30 and the signal terminal 61. Such a configuration provides the flexibility required for the portion arranged to bridge between the semiconductor element 30 and the signal terminal 61.

[0092] Seventh embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the metal layer 82 of the wiring member 80 only connects the signal pad 35 and the signal terminal 61. Instead, in this embodiment, the wiring member 780 includes a metal layer 787 bonded to the first bonding member 71. From one perspective, this embodiment provides a semiconductor module 10 that can stably adjust the thickness of the bonding member to a predetermined value. From another perspective, this embodiment provides a semiconductor module 10 that can stably set the position of the wiring member 780.

[0093] 10, the wiring member 80 is provided by a wiring member 780. The wiring member 780 is disposed between the signal pad 35 and the signal terminal 61. The wiring member 780 is disposed so as to overlap with the signal pad 35 in the X direction. Furthermore, the wiring member 780 is disposed so as to overlap with the power pad 33 in the X direction. The wiring member 780 extends so as to overlap with both the signal pad 35 and the power pad 33. In other words, the wiring member 780 extends to the region where the first joint member 71 is disposed.

[0094] The wiring member 780 has an outer edge portion 784 disposed along the first bonding member 71. The outer edge portion 784 surrounds an area where the first bonding member 71 is to be installed. The outer edge portion 784 defines an opening 785 in the resin layers 81, 83 corresponding to the area of ​​the first bonding member 71. The wiring member 780 includes a metal layer 787 exposed in the opening 785. The opening 785 is also called a cutout portion for exposing the metal layer 787 from the resin layers 81, 82. The metal layer 787 is formed of the same material as the metal layer 82. The metal layer 787 providing the power path is electrically insulated from the metal layer 82 providing the signal path. The metal layer 787 is exposed from the wiring member 780 over at least the area of ​​the first bonding member 71 in the YZ plane.

[0095] The metal layer 787 is disposed in and bonded to the first bonding member 71. As a result, the metal layer 787 divides the first bonding member 71 into a first layer 71c and a second layer 71d. The first layer 71c bonds the power pad 33 of the semiconductor element 30 and the metal layer 787. The second layer 71d bonds the metal layer 787 and the first heat dissipation member 41. In other words, the metal layer 787 is embedded in the first bonding member 71. Note that the metal layer 787 or the opening 785 may have a communication opening for forming the first layer 71c and the second layer 71d as a continuous bonding member. For example, the opening 785 can form a communication opening between the resin layers 81, 83 and the metal layer 787. Alternatively or additionally, the metal layer 787 can have a notch or a hole as a communication opening that communicates between both sides of the metal layer 787.

[0096] The metal layer 787 is positioned so as to be embedded in the first joint member 71. As a result, the position of the wiring member 780 is stabilized by the first joint member 71. Furthermore, the wiring member 780 is subjected to the flow and pressure of the resin in the molding process of molding the resin member 20. However, the wiring member 780 in which the metal layer 787 is embedded in the first joint member 71 is less likely to deform even in the molding process, and maintains a predetermined shape. For example, the wiring member 780 is less likely to warp even when subjected to the pressure of the resin.

[0097] Between the metal layer 787 and the first heat dissipation member 41, a thickness adjustment member 776 for adjusting the thickness of the first layer 71c is disposed. The thickness adjustment member 776 can be provided by a nickel ball (Ni ball), a bonding pad, a wire bonding, or the like. The thickness adjustment member 776 is provided by a conductive member or a conductive metal member that functions as the first bonding member 71 together with the first layer 71c. The thickness adjustment member 776 is also disposed between the metal layer 787 and the semiconductor element 30. The thickness adjustment member 776 contributes to adjusting the thickness of the first layer 71c and the second layer 71d to a predetermined thickness. As a result, the thickness of the first layer 71c and the second layer 71d is prevented from becoming excessively large, that is, the thickness of the first bonding member 71 is prevented from becoming excessively large. As a result, for example, a change in thermal resistance and / or a change in electrical resistance is suppressed. Furthermore, the stabilization of the thicknesses of the first layer 71c and the second layer 71d improves the reliability of the aluminum-silicon electrode (Al-Si electrode) in the power pad 33 on the semiconductor element 30. Furthermore, when repeated thermal cycles are applied, the deformation direction of the metal layer 787 and the deformation direction of the resin member 20 become the same direction, which may improve the reliability of the aluminum-silicon electrode.

[0098] Eighth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is plate-shaped to provide a continuous surface. From one perspective, the plate-shaped wiring member 80 may affect the flow of resin, such as by hindering the flow of resin, during the molding process of the resin member 20. From another perspective, the plate-shaped wiring member 80 may be subjected to a force from the flow of resin, such as by being deformed by the flow of resin. Instead, in this embodiment, the wiring member 880 has a communication portion 88 that allows the flow of the resin member 20 during the molding process. As a result, the resin member 20 penetrates the plate-shaped wiring member 880 through the communication portion 88 and exists as a continuous resin material. From one perspective, this embodiment provides a semiconductor module 10 that can improve the flow of resin during the molding process. From another perspective, this embodiment provides a semiconductor module 10 that can suppress the force acting on the wiring member 880 during the molding process.

[0099] In FIG. 11, the wiring member 80 is provided by a wiring member 880. The wiring member 880 can be used in one of the embodiments described in this specification. The wiring member 880 includes a communication portion 88 that communicates both sides of the wiring member 880. The resin member 20 penetrates the communication portion 88. The communication portion 88 is formed by a hole located adjacent to the metal layer 82. The hole penetrates the resin layers 81 and 83 in the front-rear direction. The wiring member 880 has one or more communication portions 88. The wiring member 880 may have a hole 888a located between the multiple metal layers 82. The wiring member 880 may have a hole 888b located between the metal layer 82 and the outer edge of the wiring member 880.

[0100] The communication portion 88 allows the resin member 20 to flow through the communication portion 88 in the molding process. Even if the wiring member 880 is present, the resin member 20 can flow from the front to the back of the wiring member 880 and from the back to the front. As a result, the molding quality of the resin member 20 is improved. In addition, the force acting on the wiring member 880 due to the flow of the resin member 20 is suppressed. As a result, the positional shift of the wiring member 880 or the deformation of the wiring member 880 is suppressed. In addition, the occurrence of poor bonding, including bond destruction, in the first bonding portion 80a and / or the second bonding portion 80b is suppressed.

[0101] Ninth embodiment This embodiment is a modification based on the preceding embodiment. This embodiment shows an example of a communication portion 88.

[0102] In FIG. 12, the wiring member 80 is provided by a wiring member 980. The wiring member 980 includes a communication portion 88. The communication portion 88 is provided by a single hole 988 provided in the wiring member 980. In this embodiment, the multiple metal layers 82 are arranged so as to bypass the hole 988. According to this embodiment, a hole 988 having a relatively large area can be provided at a predetermined position of the wiring member 980. As a result, in the molding process, the resin member 20 can be made to flow in a relatively large amount at a position where the resin member 20 needs to flow. The position of the hole 988 is set so as to obtain a required flow of the resin material. For example, the position of the hole 988 is set in consideration of the gate position for injecting the resin member 20 into the mold in the molding process. In addition, in this embodiment, the same action and effect as the preceding embodiment can be obtained.

[0103] Tenth embodiment This embodiment is a modification based on the preceding embodiment. This embodiment shows an example of a communication portion 88.

[0104] In FIG. 13, the wiring member 80 is provided by the wiring member A80. The wiring member A80 includes a communication portion 88. The communication portion 88 is provided by a notch A88 provided in the wiring member A80. The notch A88 is formed as an omega-shaped notch continuing from the outer edge of the wiring member A80. The notch A88 opens toward the outer edge. The notch A88 may divide the wiring member A80 into a plurality of partial members, as shown by the dashed lines. Communication portions 88 that allow the flow of resin in the molding process are formed between the plurality of partial members. In this embodiment, the same effects as those of the preceding embodiment can be obtained.

[0105] Eleventh embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the thickness of the wiring member 80 is equal to or less than the thickness of the first joint member 71. Instead, in this embodiment, the thickness of the wiring member B80 exceeds the thickness of the first joint member 71. Furthermore, the thickness of the wiring member B80 is equal to or less than the distance between the first heat dissipation member 41 and the second heat dissipation member 42. In the preceding embodiment, a jig may be used in the bonding process to properly maintain the distance between the multiple members. Also, in the bonding process, the bonding member 70 may adhere to an unintended position due to leakage, scattering, etc. of the bonding member 70. In this embodiment, the wiring member B80 is in contact with both the first heat dissipation member 41 and the second heat dissipation member 42. Furthermore, the wiring member B80 has an opening B85 for defining the positions and shapes of the first joint member 71 and the second joint member 72. From one perspective, this embodiment provides a semiconductor module 10 in which the shapes of the first bonding member 71 and the second bonding member 72 can be accurately controlled. From another perspective, this embodiment provides a semiconductor module 10 in which the distance between the first heat dissipation member 41 and the second heat dissipation member 42 can be accurately controlled.

[0106] 14, the semiconductor module 10 has a first heat dissipation member 41 and a second heat dissipation member 42. The wiring member 80 is provided by the wiring member D80. The wiring member B80 has a thickness TF2. The thickness TF2 is a thickness that brings the wiring member B80 into contact with the first heat dissipation member 41 and brings the wiring member B80 into contact with the second heat dissipation member 42. The gap between the first heat dissipation member 41 and the second heat dissipation member 42 is determined by the thickness TF2 of the wiring member B80.

[0107] The wiring member B80 has an outer edge portion B84. The wiring member B80 has an opening portion B85. The outer edge portion B84 extends so as to surround the opening portion B85. The opening portion B85 has a stepped inner wall surface. The inner wall surface is a stepped surface in which side surfaces facing the Y direction or Z direction and flat surfaces facing the X direction are alternately repeated. The inner wall surface makes it possible to position the first heat dissipation member 41, the first bonding member 71, the semiconductor element 30, the second bonding member 72, and the second heat dissipation member 42 in a layered manner in this order inside the opening portion B85.

[0108] The inner wall surface of the opening B85 contacts at least the side surface of the first heat dissipation member 41 on the first heat dissipation member 41 side. Specifically, the inner wall surface of the opening B85 contacts at least the side surface of the internal metal plate 45 on the first heat dissipation member 41 side. This allows the wiring member B80 to position the first heat dissipation member 41 in the Y direction and the Z direction. The inner wall surface of the opening B85 contacts the outer edge portion of the surface (the lower surface in the figure) of the internal metal plate 45 of the first heat dissipation member 41. This allows the wiring member B80 to position the first heat dissipation member 41 in the X direction.

[0109] The inner wall surface of the opening B85 contacts at least the side surface of the second heat dissipation member 42 on the second heat dissipation member 42 side. Specifically, the inner wall surface of the opening B85 contacts at least the side surface of the internal metal plate 48 on the second heat dissipation member 42 side. As a result, the wiring member B80 positions the second heat dissipation member 42 in the Y direction and the Z direction. The inner wall surface of the opening B85 contacts the outer edge portion of the surface (upper surface in the figure) of the internal metal plate 48 of the second heat dissipation member 42. As a result, the wiring member B80 positions the second heat dissipation member 42 in the X direction.

[0110] The inner wall surface of the opening B85 contacts the side surface of the semiconductor element 30 at approximately the center. This allows the wiring member B80 to position the semiconductor element 30 in the Y and Z directions. The inner wall surface of the opening B85 contacts the outer edge portion of the surface (upper surface in the figure) of the semiconductor element 30 at approximately the center. This allows the wiring member B80 to position the semiconductor element 30 in the X direction.

[0111] The inner wall surface of the opening B85 contacts at least the side surface of the first joint member 71 at the position where the first joint member 71 is arranged. This contact is realized by the inner wall surface preventing the flow of the first joint member 71 in the molding process. At the same time, the inner wall surface determines the shape of the first joint member 71. The wiring member B80 positions the first joint member 71 in the Y direction and the Z direction. The inner wall surface of the opening B85 contacts at least the side surface of the second joint member 72 at the position where the second joint member 72 is arranged. This contact is realized by the inner wall surface preventing the flow of the second joint member 72 in the molding process. At the same time, the inner wall surface determines the shape of the second joint member 72. The wiring member B80 positions the second joint member 72 in the Y direction and the Z direction.

[0112] The inner wall surface in the portion where the first bonding member 71 is disposed defines a volume chamber having a size that defines the size of the first bonding member 71. The inner wall surface in the portion where the second bonding member 72 is disposed defines a volume chamber having a size that defines the size of the second bonding member 72. In the process in which the bonding member 70 is melted and hardened again in the bonding process, the inner wall surface of the opening B85 suppresses leakage and scattering of the first bonding member 71. In addition, the inner wall surface of the opening B85 defines the size and shape of the first bonding member 71 in the melting process and hardening process of the first bonding member 71. In the process in which the bonding member 70 is melted and hardened again in the bonding process, the inner wall surface of the opening B85 suppresses leakage and scattering of the second bonding member 72. In addition, the inner wall surface of the opening B85 defines the size and shape of the second bonding member 72 in the melting process and hardening process of the second bonding member 72.

[0113] According to this embodiment, the gap between the first heat dissipation member 41 and the second heat dissipation member 42 is defined by the wiring member B80. As a result, the use of an additional jig is suppressed, and the shape of the semiconductor module 10 can be defined by effectively using the wiring member B80. Note that this embodiment does not completely eliminate the use of the jig. This embodiment may be used in combination with the recess 686 described in the sixth embodiment. In this embodiment, the wiring member B80 may be configured to have a thickness TF2 only in a portion located between the first heat dissipation member 41 and the second heat dissipation member 42. For example, the wiring member 680 may be configured to have a thickness smaller than the thickness TF2 in a portion arranged to bridge between the semiconductor element 30 and the signal terminal 61. Such a configuration provides flexibility required for the portion arranged to bridge between the semiconductor element 30 and the signal terminal 61.

[0114] Twelfth embodiment This embodiment is a modification of the preceding embodiment as a basic form. In the preceding embodiment, the wiring member 80 only reaches the periphery of the semiconductor element 30. When the semiconductor module 10 is used as a device that handles a large current, arranging the member that passes the positive current and the member that passes the negative current close to each other contributes to suppressing the inductance component. However, when the member that passes the positive current and the member that passes the negative current are arranged close to each other, the electrical insulation between the members may be impaired. In this embodiment, the wiring member C80 is arranged as an insulating member between a pair of power terminals 51. From one viewpoint, this embodiment provides a semiconductor module 10 with improved electrical insulation. From another viewpoint, this embodiment provides a semiconductor module 10 with suppressed inductance components.

[0115] FIG. 15 illustrates the vicinity of a pair of power terminals 51 of the semiconductor module 10. Each of the pair of power terminals 51 is electrically connected to the first heat dissipation member 41 and the second heat dissipation member 42. One of the power terminals 51a is joined to the internal metal plate 45 by a joining member C77. The other of the power terminals 51b is joined to the internal metal plate 48 by a joining member C78. One of the power paths is provided by the power terminal 51a, the joining member C77, and the internal metal plate 45. The other of the power paths is provided by the power terminal 51b, the joining member C78, ​​and the internal metal plate 48. For example, the power terminal 51a is connected to the positive electrode wire 52, and the power terminal 51b is connected to the negative electrode wire 54. The relationship between the power terminals 51a, 51b and the positive and negative electrodes may be reversed.

[0116] In this embodiment, the wiring member 80 is provided by the wiring member C80. The wiring member C80 connects the signal pad 35 of the semiconductor element 30 and the signal terminal 61. Furthermore, the wiring member C80 also reaches between the pair of power terminals 51a, 51b. A part of the wiring member C80 is disposed between the pair of power terminals 51a, 51b. The wiring member C80 positions the pair of power terminals 51a, 51b in a layered manner so as to overlap on both sides of the wiring member C80. A resin layer C89 of the wiring member C80 is disposed between the pair of power terminals 51a, 51b. The resin layer C89 is formed as an extension extending from a main portion of the wiring member C80 disposed so as to bridge between the signal pad 35 and the signal terminal 61. The resin layer C89 extends in a tongue shape from the main portion including the metal layer 82. The power terminals 51a, 51b have embedded portions embedded in the resin member 20 and exposed portions exposed from the resin member 20. The resin layer C89 is disposed between the power terminals 51a and 51b over the entire area of ​​the embedded portions of the power terminals 51a, 51b. The resin layer C89 extends slightly out to the exposed portions of the power terminals 51a, 51b.

[0117] In the buried portion, electrical insulation between the power terminal 51a and the power terminal 51b is provided by the resin layer C89. In the buried portion, the resin member 20 does not penetrate between the power terminal 51a and the power terminal 51b. Furthermore, in the exposed portion, the resin member 20 does not penetrate between the power terminal 51a and the power terminal 51b. In order to provide this state, the resin layer C89 is positioned so as to be exposed from the resin member 22 between the power terminals 51a and 51b. The resin member 20, which is formed by flowing and hardening in the molding process, contains many unstable elements regarding electrical insulation, such as thickness, density, and amount of foreign matter mixed in, compared to the resin layer C89. In this embodiment, the electrical insulation between the pair of power terminals 51a and 51b is provided solely by the resin layer C89 of the wiring member C80. As a result, even if the pair of power terminals 51a and 51b are arranged close to each other, stable electrical insulation is provided.

[0118] The power terminal 51a and the power terminal 51b are arranged close enough to each other to exert an electromagnetic effect on each other. The power terminal 51a and the power terminal 51b are arranged in a laminated manner with the resin layer C89. The power terminal 51a and the power terminal 51b are arranged close to each other, separated only by the thickness of the resin layer C89. Since currents flow in the opposite directions between the power terminals 51a and 51b, the mutual electromagnetic effect acts to suppress the inductance component. The inductance component generates a surge during high-speed switching of the semiconductor module 10. For this reason, the semiconductor module 10 needs to be used with the switching speed suppressed. Suppressing the inductance component suppresses the surge and enables high-speed switching. As a result, this embodiment provides a semiconductor module 10 that can be driven at high frequencies.

[0119] The configuration of this embodiment can be adopted in a semiconductor module 10 having a single semiconductor element 30. The configuration of this embodiment can also be adopted in a semiconductor module 10 having a plurality of semiconductor elements 30 and housing one switching arm. In this case, the plurality of semiconductor elements 30 in the semiconductor module 10 can be arranged to provide a variety of current paths. For example, the plurality of semiconductor elements 30 can be arranged so that current flows in an N-shape in the semiconductor module 10, or so that current flows in a U-shape in the semiconductor module 10.

[0120] FIG. 16 is an exploded perspective view showing a semiconductor module 10 providing one switching arm. In the illustrated example, a current flows in an N-shape in the semiconductor module 10. The semiconductor module 10 includes four heat dissipation members C40a, C40b, C40c, and C40d in a resin member 20. These heat dissipation members may be named first to fourth. The semiconductor module 10 includes a positive power terminal 51a, a negative power terminal 51b, and an AC power terminal 51c as power terminals 51. These power terminals may be named first to third. The semiconductor module 10 includes two semiconductor elements 30a and 30b. Furthermore, the semiconductor module 10 includes a wiring member C80d for the semiconductor element 30a and a wiring member C80e for the semiconductor element 30b. The wiring member C80d and the wiring member C80e may be integrally formed by a continuous resin material. In the figure, one signal terminal 61 is shown as an example.

[0121] The heat dissipation members C40a and C40b are bonded together via the semiconductor element 30a. The heat dissipation members C40c and C40d are bonded together via the semiconductor element 30b. These bonds are provided by a bonding member 70. The heat dissipation members C40b and C40c have an overlapping portion positioned so as to overlap with respect to the stacking direction (X direction). The overlapping portion is provided by a protruding portion protruding from a part of the heat dissipation members C40b and C40c. At the overlapping portion, the heat dissipation members C40b and C40c are bonded together by the bonding member 70. The heat dissipation member C40a and the power terminal 51a are bonded together by a bonding member C77. The heat dissipation member C40c and the power terminal 51b are bonded together by a bonding member C78.

[0122] The wiring member C80 for the semiconductor element 30a has a tongue-shaped resin layer C89. The resin layer C89 is interposed between the power terminal 51a and the power terminal 51b. The resin layer C89 and the power terminal 51a face each other at the facing surface C89a. The resin layer C89 and the power terminal 51a are in close contact with each other at the facing surface C89a. The resin layer C89 and the power terminal 51b face each other at the facing surface C89b. The resin layer C89 and the power terminal 51b are in close contact with each other at the facing surface C89b. The close contact between the resin layer C89 and the power terminals 51a and 51b prevents the intrusion of the resin member 20 in the molding process. The close contact between the resin layer C89 and the power terminals 51a and 51b prevents the intrusion of foreign matter even after the semiconductor module 10 is completed.

[0123] In the figure, for example, a current path when a current flows from the power terminal 51a to the power terminal 51b is illustrated by a thick dashed arrow. The power terminal 51a and the power terminal 51b are electrically insulated by the resin layer C89. The current flowing through the power terminal 51a and the current flowing through the power terminal 51b are arranged close to each other by the resin layer C89, so that the inductance component is suppressed by mutual electromagnetic action. The heat dissipation member C40a and the heat dissipation member C40d have an overlapping portion positioned to overlap with respect to the stacking direction (X direction). The overlapping portion is provided by a protruding portion protruding from a part of the heat dissipation members C40a and C40d. In the overlapping portion, the resin layer C89 is arranged between the heat dissipation member C40a and the heat dissipation member C40d. As a result, the resin layer C89 improves the electrical insulation between the heat dissipation member C40a and the heat dissipation member C40d in the overlapping portion.

[0124] According to this embodiment, it is possible to suppress the inductance component in the pair of power terminals 51. As a result, this embodiment provides a semiconductor module 10 that can be driven at high frequencies.

[0125] Thirteenth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the semiconductor element 30 and the first heat dissipation member 41 are bonded only by the bonding member 70. In this case, if the thickness of the bonding member 70 is small, the flow of the resin member 20 in the molding process may be hindered. In addition, the thickness of the bonding member 70 may allow the semiconductor element 30 to tilt, and the electrical insulation may be impaired. In this embodiment, in addition to the bonding member 70, a spacer member D77 having a predetermined thickness is disposed between the semiconductor element 30 and the first heat dissipation member 41. From one perspective, this embodiment provides a semiconductor module 10 that is appropriately molded by the resin member 20. From another perspective, this embodiment provides a semiconductor module 10 in which the thickness of the bonding member 70 is suppressed and the tilt of the semiconductor element 30 is suppressed.

[0126] In FIG. 17, the semiconductor module 10 has a joint member 70 and a spacer member D77 between the semiconductor element 30 and the first heat dissipation member 41. The spacer member D77 is provided by a material having high electrical conductivity and high thermal conductivity. In this embodiment, the spacer member D77 is provided by a metal plate made of copper or aluminum. The spacer member D77 is provided in the first joint member 71 between the semiconductor element 30 and the first heat dissipation member 41. The spacer member D77 may also be called a terminal member for the semiconductor element 30. The first joint member 71 includes a first layer 71c located between the power pad 33 of the semiconductor element 30 and the spacer member D77, and a second layer 71d located between the spacer member D77 and the first heat dissipation member 41. It can be said that the spacer member D77 divides the first joint member 71 into the first layer 71c and the second layer 71d. The first layer 71c and the second layer 71d may be continuous with each other on the side surface of the spacer member D77.

[0127] The spacer member D77 adjusts the distance between the semiconductor element 30 and the first heat dissipation member 41 to a predetermined value or more. The predetermined value is a gap that maintains the fluidity of the resin member 20 in a molding process. By providing a gap of a predetermined value or more, the resin member 20 can flow into the gap between the semiconductor element 30 and the first heat dissipation member 41. For example, the resin member 20 can flow into the vicinity of the first bonding portion 80a of the wiring member 80. As a result, the generation of voids in the resin member 20 is suppressed, and the resin member 20 is properly molded. The properly molded resin member 20 stably supports and fixes multiple components at predetermined positions. In addition, the properly molded resin member 20 provides the required electrical insulation.

[0128] The spacer member D77 reduces the thickness of the joint member 70 between the semiconductor element 30 and the first heat dissipation member 41. The thickness of the first joint member 71 is reduced to the thickness of the first layer 71c and the thickness of the second layer 71d. This reduces the inclination of the semiconductor element 30 and the first heat dissipation member 41.

[0129] Fourteenth embodiment This embodiment is a modification of the previous embodiment as a basic form. In the previous embodiment, the wiring member 80 is formed of resin layers 81 and 83 and a metal layer 82. The wiring member 80 may be deformed during the molding process. For example, the wiring member 80 may be warped to cause residual stress in the joints 80a and 80b. In addition, the flexible wiring member 80 may have unintended deterioration of electrical insulation due to deformation during the molding process. In this embodiment, a wiring member E80 including an additional metal layer E90 is used so as to cause plastic deformation to an extent that the wiring member E80 maintains a predetermined shape. The additional metal layer E90 provides the wiring member E80 with mechanical strength that allows the wiring member E80 to maintain a predetermined shape while having flexibility that allows the wiring member E80 to be deformed by reversible plastic deformation. This embodiment provides a semiconductor module 10 in which unintended deformation of the wiring member 80 is suppressed.

[0130] FIG. 18 shows an enlarged cross-sectional view of the first bonding portion 80a. The wiring member 80 is provided by the wiring member E80. The semiconductor element 30 has a signal pad 35. The metal layer 82 is bonded to the signal pad 35 at the first bonding portion 80a. In the figure, a bonding means E70 for bonding the metal layer 82 and the signal pad 35 is illustrated by a triangular symbol. The bonding means E70 includes various bonding means available for electrical connection of the metal layer 82. The bonding means E70 includes the bonding member 70 described in the preceding embodiment. The bonding means E70 includes a welded bond such as laser welding, electric welding, etc.

[0131] The wiring member E80 includes an additional metal layer E90 in addition to the resin layers 81 and 82 and the metal layer 82 as a conductive member. The additional metal layer E90 is additionally provided on the wiring member E80. The additional metal layer E90 is made of, for example, stainless steel. The additional metal layer E90 is bonded to the resin layer 83. The additional metal layer E90 is located only on the surface of the resin layer 83 and is not added to the exposed portion of the metal layer 82. The additional metal layer E90 is electrically insulated from the metal layer 82 as a signal path. A resin layer may be additionally provided to cover the additional metal layer E90.

[0132] The additional metal layer E90 has a rigidity that allows reversible plastic deformation. As a result, the wiring member E80 is more flexible in deformation than the signal terminal 61, but has a rigidity sufficient to maintain its shape under the pressure of the resin member 20 in the molding process. The wiring member E80 suppresses deformation in the molding process. As a result, warpage deformation in the first bonding portion 80a or the second bonding portion 80b is suppressed. Suppression of warpage deformation suppresses stress that may destabilize or destroy the bonding in the first bonding portion 80a or the second bonding portion 80b. As a result, this embodiment provides a semiconductor module 10 with high reliability.

[0133] The wiring member E80 is deformed so as to be curved in a direction away from the surface of the semiconductor element 30. In the figure, the wiring member E80c of the comparative example is illustrated by a dashed line. The wiring member E80c of the comparative example is flat. The wiring member E80c of the comparative example is arranged in contact with the surface of the semiconductor element 30. In this case, the wiring member E80c of the comparative example may cause dielectric breakdown. The wiring member E80, which provides a shape curved in a direction away from the surface of the semiconductor element 30, can suppress the possibility of dielectric breakdown. For example, the curved shape of the wiring member E80 allows the resin member 20 to flow into the gap between the wiring member E80 and the surface of the semiconductor element 30. The resin member 20 that flows into the gap suppresses the possibility of dielectric breakdown.

[0134] Fifteenth embodiment This embodiment is a modification of the preceding embodiment. In the preceding embodiment, the wiring member E80 includes an additional metal layer E90 that generates plastic deformation. When the wiring member E80 is used, an end face of the wiring member E80 is disposed in the vicinity of the semiconductor element 30. In this case, noise may be generated in the metal layer 82 due to the influence of a large current flowing through the semiconductor element 30. In this embodiment, the additional metal layer E90 is used as a shielding layer against electromagnetic noise.

[0135] In FIG. 19, the wiring member 80 is provided by the wiring member E80. The additional metal layer E90 is arranged so as to overlap the metal layer 82 for the signal path. The additional metal layer E90 spreads over the entire plate-like area of ​​the wiring member E80. The wiring member E80 includes a ground member F91 that electrically grounds the additional metal layer E90. A non-limiting example of the ground member F91 grounds the additional metal layer E90 to the reference potential of the semiconductor element 30. When the semiconductor element 30 includes a signal pad 35 at the reference potential, the ground member F91 grounds the additional metal layer E90 to the signal pad 35 at the reference potential. The reference potential is given by a Kelvin emitter potential (KE potential) when the SW element is an IGBT, and by a Kelvin source potential (KS potential) when the SW element is a MOSFET. The additional metal layer E90 functions as an electromagnetic shield layer for the metal layer 82. The additional metal layer E90 suppresses noise associated with the metal layer 82 included in the wiring member E80. As a result, according to this embodiment, a semiconductor module 10 in which noise is suppressed is provided.

[0136] Sixteenth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the bonding process is performed after the bonding member 70 is placed between the signal pad 35 and the metal layer 82, or between the signal terminal 61 and the metal layer 82. In this case, it is difficult to accurately manage the volume of the bonding member 70. If the volume of the bonding member 70 is insufficient relative to the appropriate amount, poor bonding occurs. If the volume of the bonding member 70 is excessive relative to the appropriate amount, unintended bonding may occur. In addition, the placed bonding member 70 may leak before the bonding process. This embodiment makes it possible to reliably and easily manage the volume of the bonding member 70 in the first bonding portion 80a and / or the second bonding portion 80b.

[0137] In FIG. 20, the wiring member 80 is provided by the wiring member G80. The figure shows an intermediate state in the manufacturing method showing the third bonding step and / or the fourth bonding step related to the wiring member G80. The intermediate product 10a is placed and held by a jig G92 used in the manufacturing method. The jig G92 is provided by a holder that can be positioned in a melting furnace that melts the bonding member 70, or a carrier that carries the intermediate product 10a. The intermediate product 10a includes a second heat dissipation member 42 and a semiconductor element 30 bonded to the second heat dissipation member 42 by a second bonding member 72. The intermediate product 10a further includes a power terminal 51 and a signal terminal 61. The power terminal 51 and the signal terminal 61 are held by the jig G92. The intermediate product 10a further includes the wiring member G80. The wiring member G80 is arranged and held in a specified position using alignment marks provided on the wiring member G80 and the semiconductor element 30. The alignment marks can be provided near the signal pads 35 of the semiconductor element 30.

[0138] The wiring member G80 has a first surface G80f facing the semiconductor element 30 and a second surface G80g opposite to the first surface G80f. The wiring member G80 has an opening G80h in the first bonding portion 80a through which the third bonding member G73 can be supplied from above in the direction of gravity. The wiring member G80 has an opening G80i in the second bonding portion 80b through which the fourth bonding member G74 can be supplied from above in the direction of gravity.

[0139] FIG. 21 is a plan view showing the wiring member G80 in this embodiment. The wiring member G80 has an opening G80h and a metal layer 82 exposed to the opening G80h in the first bonding portion 80a. The metal layer 82 has a gap G93 as a communication portion between the opening G80h and the metal layer 82. A part of the third bonding member G73 supplied from above passes through the gap G93 to bond the metal layer 82 and the signal pad 35. The metal layer 82 has a hole G94 as a communication portion that communicates with the opening G80h and opens on both sides of the metal layer 82. A part of the third bonding member G73 supplied from above passes through the hole G94 to bond the metal layer 82 and the signal pad 35. As shown in the figure, only one of the gap G93 and the hole G94 may be provided. In either configuration, a communication portion that communicates between the front and back of the metal layer 82 is provided in the opening G80h.

[0140] The wiring member G80 has an opening G80i and a metal layer 82 exposed to the opening G80i at the second joint portion 80b. The metal layer 82 has a gap G93 as a communication portion between the opening G80i and the metal layer 82. A part of the fourth joint member G74 supplied from above passes through the gap G93 to bond the metal layer 82 and the signal terminal 61. The metal layer 82 has a hole G94 as a communication portion that communicates with the opening G80i and opens on both sides of the metal layer 82. A part of the fourth joint member G74 supplied from above passes through the hole G94 to bond the metal layer 82 and the signal terminal 61. As shown in the figure, only one of the gap G93 and the hole G94 may be provided. In either configuration, a communication portion that communicates between the front and back of the metal layer 82 is provided at the opening G80i.

[0141] Returning to FIG. 20, in the bonding process, the supply of the third bonding member G73 from above in the direction of gravity can be performed by a manufacturing method in which the fourth bonding member G74 in a molten state is dropped. After being dropped, the third bonding member G73 flows between the metal layer 82 and the signal pad 35 through the communicating portion, bonds them, and hardens. In the bonding process, the supply of the fourth bonding member G74 from above in the direction of gravity can be performed by a manufacturing method in which the fourth bonding member G74 in a molten state is dropped. After being dropped, the fourth bonding member G74 flows between the metal layer 82 and the signal terminal 61 through the communicating portion, bonds them, and hardens.

[0142] The bonding process may include a supplying process and a heating process. In the supplying process, the third bonding member G73 in a paste form or a solid form is supplied to the opening G80h from above in the direction of gravity. In the heating process, the third bonding member G73 is melted. As a result, the third bonding member G73 flows between the metal layer 82 and the signal pad 35 through the communicating portion, bonds them, and hardens. In the supplying process, the fourth bonding member G74 in a paste form or a solid form is supplied to the opening G80i from above in the direction of gravity. In the heating process, the fourth bonding member G74 is melted. As a result, the fourth bonding member G74 flows between the metal layer 82 and the signal terminal 61 through the communicating portion, bonds them, and hardens.

[0143] According to this embodiment, the third joint member G73 or the fourth joint member G74 can be supplied to the opening G80h or the opening G80i from above in the gravity direction, which makes it easy to manage the volume.

[0144] Seventeenth embodiment This embodiment is a modification based on the preceding embodiment, in which the wiring member 80 is joined by the joining member 70 that is melted and then hardened. Instead, this embodiment employs a contact welding method as a joining means.

[0145] In FIG. 22, the wiring member 80 is provided by the wiring member H80. The intermediate product 10a is placed and held by a jig H92 used in the manufacturing method. The jig H92 is provided by a holder suitable for welding the metal layer 82 of the wiring member H80 to the signal pad 35 and the signal terminal 61, or a carrier for carrying the intermediate product 10a. The welding of the metal layer 82 is performed by the welding tools H73 and H74. The welding tools H73 and H74 are welding tools that involve physical contact. If the welding is ultrasonic welding, the welding tools H73 and H74 are provided by an ultrasonic oscillator and a horn. The ultrasonic welding welds the metal layer 82 and the signal pad 35. The ultrasonic welding welds the metal layer 82 and the signal terminal 61. If the welding is electric welding, the welding tools H73 and H74 are provided by a welding electrode. The jig H92 provides a current path for passing a welding current. The electric welding welds the metal layer 82 to the signal pad 35. The electric welding welds the metal layer 82 to the signal terminal 61.

[0146] Eighteenth embodiment This embodiment is a modification based on the preceding embodiment, in which the wiring member 80 is joined by the joining member 70 that is melted and then hardened. Instead, this embodiment employs a non-contact welding method as a joining means.

[0147] In FIG. 23, the wiring member 80 is provided by the wiring member I80. The intermediate product 10a is placed and held by a jig I92 used in the manufacturing method. The jig I92 is provided by a holder suitable for welding the metal layer 82 of the wiring member I80 to the signal pad 35 and the signal terminal 61, or a conveyor for conveying the intermediate product 10a. The welding of the metal layer 82 is performed by supplying high energy supplied from the welding tools I73, I74. The welding tools I73, I74 are non-contact welding tools that do not involve physical contact. If the welding is laser welding, the welding tools I73, I74 are provided by a laser oscillator and a laser guide. The laser welding welds the metal layer 82 and the signal pad 35. The laser welding welds the metal layer 82 and the signal terminal 61.

[0148] Nineteenth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the semiconductor element 30 may be bonded only with a bonding member 70. The bonding member 70 is a material that hardens after melting. For this reason, the semiconductor element 30 may be fixed in an inclined state. The inclination of the semiconductor element 30 may cause a decrease in electrical insulation or heat transfer. This embodiment provides a semiconductor module 10 with desired electrical characteristics by suppressing the inclination of the semiconductor element 30 with respect to the heat dissipation member 40.

[0149] In FIG. 24, a tilt suppressing member J76 that suppresses the tilt of the semiconductor element 30 is disposed in the bonding member 70 between the semiconductor element 30 and the heat dissipation member 40. The tilt suppressing member J76 can be provided by a metal ball having high electrical conductivity and high thermal conductivity. The metal ball can be made of copper, nickel, or the like. These metal balls do not prevent the bonding member 70 from melting or hardening. In the illustrated example, the tilt suppressing member J76 is provided in the first bonding member 71, the second bonding member 72, the third bonding member 73, and the fourth bonding member 74. From the viewpoint of suppressing the tilt of the semiconductor element 30, the tilt suppressing member J76 is preferably provided in the first bonding member 71 and / or the second bonding member 72. The tilt suppressing member J76 adjusts the thickness of the bonding member 70 to a predetermined range, and therefore can also be called a thickness setting member.

[0150] A non-limiting example of the tilt suppression member J76 is provided by the metal ball described in this embodiment. A non-limiting example of the tilt suppression member J76 can be provided by the wiring member 80 arranged on the outside of the semiconductor element 30. In this case, the wiring member 80 can have a frame-shaped portion surrounding the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by a protrusion that partially protrudes from the heat dissipation member 40 toward the semiconductor element 30. In this case, the heat dissipation member 40 can have a plurality of protrusions. The tilt suppression member J76 is provided, for example, by stud bonding that protrudes from the heat dissipation member 40 toward the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by a groove provided in the heat dissipation member 40 corresponding to the outer periphery of the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by an insulating film arranged on the surface of the heat dissipation member 40 facing the semiconductor element 30.

[0151] 9 or 14 is also effective as the tilt suppressing member J76. In these examples, the wiring member 80 is positioned so as to surround the semiconductor element 30, thereby defining the thickness of the bonding member 70. Thus, the wiring member 80 in these examples functions as the tilt suppressing member J76.

[0152] Twentieth embodiment This embodiment is a modification of the preceding embodiment as a basic form, and shows an example of a tilt suppression member.

[0153] In FIG. 25, the semiconductor element 30 has a tilt suppression member K76 on at least one surface. The tilt suppression member K76 suppresses the tilt of the semiconductor element 30 relative to the heat dissipation member 40. The tilt suppression member K76 is provided by stud bonding formed on at least one surface of the semiconductor element 30. The stud bonding provides a conductive protrusion on the surface of the semiconductor element 30. The stud bonding is sometimes called a stud bump. The stud bonding is made of a metal such as gold, copper, or aluminum.

[0154] In the illustrated example, the semiconductor element 30 has a plurality of tilt suppression members K76 on both surfaces thereof. The tilt suppression member K76 is formed on one surface so as to be located within the first bonding member 71. The tilt suppression member K76 is formed, for example, within the range of the power pad 33, and is provided by a plurality of stud bondings protruding from the semiconductor element 30 toward the first heat dissipation member 41. The tilt suppression member K76 is formed on the other surface so as to be located within the second bonding member 72. The tilt suppression member K76 is formed, for example, within the range of the power pad 34, and is provided by a plurality of stud bondings protruding from the semiconductor element 30 toward the second heat dissipation member 42.

[0155] In the bonding process of the manufacturing method, excessive proximity between the heat dissipation member 40 and portions other than the power pads 33, 34, such as the side surfaces of the semiconductor element 30, may cause unintended deterioration of the insulation state or destruction. If the thickness of the bonding member 70 in contact with the semiconductor element 30 becomes smaller than a predetermined minimum thickness partially or entirely, there is a concern about the above-mentioned excessive proximity.

[0156] According to this embodiment, when the bonding member 70 is in a molten state, the tilt suppressing member K76 suppresses the inclination of the semiconductor element 30 relative to the heat dissipation member 40. From another perspective, the tilt suppressing member K76 is also called a thickness defining member that defines the thickness of the bonding member 70. Furthermore, the tilt suppressing member K76 is positioned inside the bonding member 70. The tilt suppressing member K76 is made of a metal that is easily compatible with the bonding member 70 in a molten state and is easily bonded to the bonding member 70. Therefore, the tilt suppressing member K76 prevents the bonding member 70 from flowing away from the surface of the semiconductor element 30 in the bonding process of the manufacturing method. In other words, the tilt suppressing member K76 acts to keep the bonding member 70 above and / or below the surface of the semiconductor element 30. From this perspective, the tilt suppressing member K76 is also called a flow suppressing member that suppresses the flow of the bonding member 70.

[0157] In the bonding process of the manufacturing method, when the bonding member 70 is in a molten state, the tilt suppression member K76 suppresses the thickness of the bonding member 70 in contact with the semiconductor element 30 from becoming smaller than a predetermined minimum thickness. As a result, the tilt of the semiconductor element 30 is suppressed. In other words, a situation in which parts of the semiconductor element 30 other than the power pads 33, 34, such as the side surfaces, come excessively close to the heat dissipation member 40 is suppressed.

[0158] Twenty-first embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 electrically connects the signal pad 35 and the signal terminal 61 in the semiconductor element 30. In the manufacturing method, the wiring member 80 may be positioned based on the signal pad 35. In this case, due to misalignment, dimensional errors, etc. of the semiconductor element 30, the signal terminal 61, the wiring member 80, etc., the signal terminal 61 and the wiring member 80 may not be positioned in the intended positional relationship. The reverse case is also assumed. In the manufacturing method, the wiring member 80 may be positioned based on the signal terminal 61. In this case, due to misalignment, dimensional errors, etc. of the semiconductor element 30, the signal terminal 61, the wiring member 80, etc., the signal pad 35 and the wiring member 80 may not be positioned in the intended positional relationship. In particular, when a plurality of signal pads 35 are arranged with a relatively small pad pitch, the above problem becomes prominent. In this embodiment, the opening L80h in the first bonding portion 80a is formed smaller than the opening L80i in the second bonding portion 80b. This shape allows for a relatively small pad pitch while allowing for component positional deviations and dimensional errors. This provides a semiconductor module 10 that allows for electrical connection to be formed by the wiring member 80 while allowing for component positional deviations and error components including dimensional errors.

[0159] In FIG. 26, this embodiment is a modified example based on the embodiment of FIG. 6. The wiring member 80 is provided by the wiring member L80. The wiring member L80 includes an opening L80h for joining the signal pads 35a and 35b and the metal layer 82. The wiring member L80 includes an opening L80i for joining the signal terminal 61 and the metal layer 82. The openings L80h and L80i are window portions provided in the resin layers 81 and 83, and expose a part of the metal layer 82. The openings L80h and L80i are provided as holes. The openings L80h and L80i may be provided as cutouts. The area Ah of the opening L80h is smaller than the area Ai of the opening L80i (Ah < Ai). The difference between the area Ah and the area Ai allows for error components of a plurality of components in the joining process and enables joining at the second joining portion 80b. Here, the shape of the opening L80i is set according to the error components. For example, when the error components include many error components in the Y direction, the shape of the opening L80i is set to a shape having a longitudinal direction in the Y direction. Also, for example, when the error components include many error components in the Z direction, the shape of the opening L80i is set to a shape having a longitudinal direction in the Z direction. Note that as error components, component misalignment in the placement process and / or dimensional errors of components in the preparation process can be assumed.

[0160] The arrangement step of the manufacturing method is performed so that the first bonding portion 80a is aligned with the signal pads 35a and 35b. That is, the arrangement step is performed so that the openings L80h of the wiring member L80 are accurately positioned with the signal pads 35a and 35b. As a result, when the bonding step is performed after the arrangement step, even if the pad pitch is small, the signal pads 35a and 35b can be bonded to the metal layers 82. Furthermore, in the arrangement step, the second bonding portion 80b is arranged in the vicinity of the signal terminals 61. At this time, the second bonding portion 80b having the openings L80i with a relatively large area is arranged so as to be aligned with the signal terminals 61 even if there is an error component. At this time, the openings L80i with a large area allow the error component and position the signal terminals 61 and the metal layers 82 in a positional relationship that allows them to be bonded to each other. For example, a single signal terminal 61 is positioned within the range of the openings L80i. As a result, when the bonding process is performed after the placement process, even if there is an error component, the error component is tolerated and multiple bonding portions are formed between each of the multiple signal terminals 61 and each of the multiple metal layers 82.

[0161] According to this embodiment, even if there is an error component, the wiring member L80 can provide multiple electrical connections between the multiple signal pads 35a, 35b and the multiple signal terminals 61. In particular, this embodiment can perform bonding of the multiple signal pads 35a, 35b with high positional accuracy even if the multiple signal pads 35a, 35b have a small pad pitch. This configuration is effective, for example, when the active area of ​​the semiconductor element 30 as an element is relatively large due to a small pad pitch.

[0162] Twenty-second embodiment This embodiment is a modification based on the previous embodiment. In the previous embodiment, the wiring member 80 includes a metal layer 82 for electrical connection. The wiring member 80 may be flexibly deformed in each of the arrangement process, the bonding process, and the molding process. On the other hand, if the wiring member 80 is deformed excessively, an unintended decrease in electrical insulation may occur. From another perspective, there is a concern that desirable electrical characteristics may not be obtained even if the deformation amount of the wiring member 80 is less than the intended deformation amount. This embodiment imparts an appropriate rigidity to the wiring member 80. This suppresses excessive deformation of the wiring member 80. From another perspective, this embodiment imparts different rigidities to different parts of the wiring member 80. This makes it possible to cause a desirable deformation in one part of the wiring member 80 and suppress deformation in other parts.

[0163] 27, the wiring member 80 is provided by a wiring member M80. The wiring member M80 includes a metal layer 82 for electrical connection. Furthermore, the wiring member M80 includes additional metal layers M95, M96 on one side of the metal layer 82, on both sides of the metal layer 82, or between the multiple metal layers 82. The additional metal layers M95, M96 increase the rigidity of the wiring member M80 compared to a wiring member 80 that does not include them.

[0164] The wiring member M80 may have an additional metal layer only on a part of the wiring member M80, and not on the remaining part. As a non-limiting example, an additional metal layer M95 is illustrated. The additional metal layer M95 is disposed only on the first joint portion 80a and / or the second joint portion 80b. In this case, the additional metal layer M95 adjusts the rigidity of the wiring member M80 at the first joint portion 80a and / or the second joint portion 80b to be higher than the rigidity of the wiring member M80 at the other portions. The high rigidity of the wiring member M80 only on the first joint portion 80a and / or the second joint portion 80b improves the accuracy of positioning in the placement process at the first joint portion 80a and / or the second joint portion 80b. In addition, the high rigidity of the wiring member M80 only on the first joint portion 80a and / or the second joint portion 80b improves the reliability of the joining process. As a result, the high rigidity of the wiring member M80 only at the first joint portion 80a and / or the second joint portion 80b improves the reliability of the joint portion, and therefore improves the reliability of the semiconductor module 10.

[0165] The wiring member M80 may include an additional metal layer parallel to the metal layer 82. As a non-limiting example, the additional metal layer M96 is illustrated. The additional metal layer M96 adjusts the rigidity of the wiring member M80 to be high over the entire area between the first joint portion 80a and the second joint portion 80b.

[0166] From one viewpoint, this embodiment provides a wiring member M80 with desirable rigidity. From another viewpoint, this embodiment provides a wiring member M80 with partially different rigidity. These configurations make it possible to set the deformation of the wiring member M80 in a planned manner. As a result, this embodiment provides a semiconductor module 10 with high reliability associated with the wiring member M80.

[0167] Twenty-third embodiment This embodiment is a modification of the preceding embodiment as a basic form. In the preceding embodiment, the wiring member 80 includes a plurality of metal layers 82 arranged at equal intervals from each other. The shapes of the plurality of metal layers 82 in the wiring member 80 affect the inductance component in the signal path. The wiring member N80 of this embodiment includes signal lines N82g and N82s arranged closely to suppress the inductance component. This embodiment provides a semiconductor module 10 capable of increasing the switching speed.

[0168] In FIG. 28, the wiring member 80 is provided by the wiring member N80. The wiring member N80 includes a plurality of metal layers 82. The plurality of metal layers 82 includes a metal layer 82 that provides a drive signal line N82g and a metal layer 82 that provides a reference potential signal line N82s. When the semiconductor element 30 provides a MOSFET, the drive signal line N82g is a gate line. In this case, the reference potential signal line N82s is a source line. When the semiconductor element 30 provides an IGBT, the drive signal line N82g is a base line. In this case, the reference potential signal line N82s is an emitter line. When attempting to increase the speed of the switching operation of the semiconductor element 30, the inductance of a loop circuit including the drive signal line and the reference potential signal line hinders the increase in speed. In particular, in the case of a semiconductor element 30 made of SiC, which is expected to increase in speed, suppressing the inductance in the signal path is an important issue.

[0169] The multiple metal layers 82 are arranged at the first joint 80a to provide a pad pitch Pp between the multiple signal pads. The multiple metal layers 82 are arranged at the second joint 80b to provide a terminal pitch Pi between the multiple signal terminals 61. Furthermore, the drive signal line N82g and the reference potential signal line N82s are arranged to form a line pitch Pn between the first joint 80a and the second joint 80b. The line pitch Pn is smaller than the terminal pitch Pi (Pi>Pn). The line pitch Pn is smaller than the pad pitch Pp (Pp>Pn). At least one of the drive signal line N82g and the reference potential signal line N82s is arranged in a detouring manner in the YZ plane so as to move closer to the other and form the line pitch Pn. In this embodiment, both the drive signal line N82g and the reference potential signal line N82s are arranged in a detouring manner so as to approach each other. The drive signal line N82g and the reference potential signal line N82s are arranged to be symmetrical with respect to a middle line CTL located in the middle of the two signal lines. The detour arrangement is provided by a shape including an oblique portion extending obliquely near the first joint 80a, a straight portion extending linearly between the first joint 80a and the second joint 80b, and an oblique portion extending obliquely near the second joint 80b.

[0170] In this embodiment, the line pitch Pn increases the mutual inductance M between the drive signal line N82g and the reference potential signal line N82s. The mutual inductance M is larger than when the line pitch is equal to the terminal pitch Pi or the pad pitch Pp. This reduces the inductance component of the loop circuit formed by the drive signal line N82g and the reference potential signal line N82s.

[0171] Furthermore, the drive signal line N82g and the reference potential signal line N82s are provided by a metal layer 82 fixed by resin layers 81 and 83. Therefore, the distance between the drive signal line N82g and the reference potential signal line N82s is less likely to fluctuate compared to wire bonding. This stabilizes the inductance of the signal line, and as a result, the switching element provided by the semiconductor element 30 can operate stably at high speed.

[0172] Twenty-fourth embodiment This embodiment is a modification of the previous embodiment. In the previous embodiment, the mutual inductance M between the drive signal line N82g and the reference potential signal line N82s is increased to merely suppress the inductance of the loop circuit. In this embodiment, the drive signal line N82g and the reference potential signal line N82s are provided by a laminate of multiple metal layers electrically connected in parallel to further reduce the inductance of the loop circuit. This embodiment also provides a semiconductor module 10 capable of increasing the switching speed.

[0173] In FIG. 29, the wiring member 80 is provided by the wiring member o80. The driving signal line o82g and the reference potential signal line o82s are provided by a laminate of a plurality of metal layers electrically connected in parallel. Each of the driving signal line N82g and the reference potential signal line N82s includes a plurality of metal layers 82 arranged in a laminated manner with respect to the thickness direction X of the wiring member 80. The plurality of metal layers 82 are connected in parallel at the first joint portion 80a and the second joint portion 80b. The illustration shows three metal layers 82 as a non-limiting example. For example, the driving signal line o82g is provided by a laminate of a metal layer o82p, a metal layer o82q, and a metal layer o82r. The plurality of metal layers o82p, o82q, and o82r are laminated at a distance Gp by the insulating layer provided by the resin layers 81 and 83. Similarly, the reference potential signal line o82s is also provided by a laminate of three metal layers. Furthermore, in this embodiment, a stack of multiple metal layers providing the drive signal line o82g and a stack of multiple metal layers providing the reference potential signal line o82s are arranged to form an inter-line pitch Pn with respect to each other.

[0174] According to this embodiment, the inductance of the loop circuit can be suppressed. One configuration for suppressing the inductance is to make the drive signal line o82g and the reference potential signal line o82s close to the line pitch Pn. This increases the mutual inductance between the drive signal line o82g and the reference potential signal line o82s, thereby suppressing the inductance of the loop circuit. Another configuration for suppressing the inductance is to provide the drive signal line o82g and the reference potential signal line o82s with a laminate of multiple metal layers electrically parallel to each other. This suppresses both the inductance of the drive signal line o82g itself and the inductance of the reference potential signal line o82s itself. As a result, in this embodiment, the SW element provided by the semiconductor element 30 can be operated at high speed.

[0175] In this embodiment, the drive signal line o82g and the reference potential signal line o82s may be arranged not to be close to each other. In this case as well, the laminate of metal layers suppresses the inductance.

[0176] Twenty-fifth embodiment This embodiment is a modification based on the preceding embodiment. In the embodiment shown in FIG. 9, the recess 686 has a thickness of at least one resin layer. In this embodiment, the wiring member P80 is formed by a single resin layer 81. The wiring member P80 defines a recess 86 by only a part of the resin layer 81. The recess 86 includes a recess P86a and a recess P86b. In this embodiment, the recesses P86a and P86b also allow the intrusion of an excess of the bonding member 70 in the bonding process. As a result, a semiconductor module 10 is provided in which performance degradation caused by an excess of the bonding member 70 is suppressed.

[0177] In FIG. 30, the semiconductor module 10 includes a wiring member P80. The wiring member P80 is provided by the wiring member P80. The wiring member P80 is disposed between the semiconductor element 30 and the first heat dissipation member 41. The wiring member P80 includes a metal layer 82 that electrically connects the signal pad 35 and the signal terminal 61. The wiring member P80 is formed by a single resin layer 81. The resin layer 81 defines an opening P85 for the first bonding member 71. The opening P85 defines the shape of the first bonding member 71 in a fluid state in the bonding process, and functions as a forming wall that defines the shape of the first bonding member 71 when it hardens again. The first bonding member 71 has a polygonal column shape.

[0178] The resin layer 81 has a recess P86a that opens into the opening P85 and communicates with the opening P85. The resin layer 81 has a recess P86b that opens into the opening P85 and communicates with the opening P85. The recess P86a and the recess P86b open into the opening P85 at different positions. The recess P86a and the recess P86b are positioned so as to open facing each other.

[0179] FIG. 31 is a partial cross-sectional view taken along the line XXXI-XXXI in FIG. 30 in a state where the resin member 20 has been removed. The opening P85 defined by the wiring member P80 is a polygonal prism. In the illustrated example, the opening P85 is defined as a quadrangular prism or a quadrilateral prism. The recess P86a and the recess P86b are disposed on different walls among a plurality of walls defining the opening P85. At least one of the recesses P86a and 86b is open over almost the entire width in the Y direction (width direction) of the wall defining the opening P85. Alternatively, at least one of the recesses P86a and 86b may be open only over a portion of the entire width of the wall defining the opening P85. The recesses P86a and 86b are formed into a groove shape having a longitudinal direction in the Y direction by elongating only in the Y direction.

[0180] The recesses P86a and P86b are disposed on walls that surround the opening P85 and face each other. The recesses P86a and P86b can be formed on at least one of the walls that define the opening P85. Furthermore, the recesses P86a and P86b may open in a continuous groove shape so as to surround the opening P85.

[0181] The manufacturing method of the semiconductor module 10 includes a placement step of placing the semiconductor element 30, the wiring member P80, and the first heat dissipation member 41 in a layered manner. In the placement step, the first bonding member 71 is placed in the opening P85. Furthermore, the manufacturing method of the semiconductor module 10 includes a bonding step of melting the first bonding member 71 and hardening it again after the placement step to bond the semiconductor element 30 and the first heat dissipation member 41. In the bonding step, the opening P85 forms the shape of the first bonding member 71. If the amount of the first bonding member 71 is appropriate in the bonding step, the first bonding member 71 bonds the semiconductor element 30 and the first heat dissipation member 41 without flowing into the recesses P86a and P86b. On the other hand, if an excessive amount of the first bonding member 71 is placed, the first bonding member 71 melted in the bonding step flows into the recesses P86a and P86b as if being pushed toward the recesses P86a and P86b.

[0182] Furthermore, in this embodiment, the wiring member P80 defines the distance and parallelism between the semiconductor element 30 and the first heat dissipation member 41. This prevents the semiconductor element 30 from being unintentionally tilted relative to the first heat dissipation member 41. The wiring member P80 makes it possible to control the distance and parallelism of the semiconductor element 30 relative to the first heat dissipation member 41 with high precision. As a result, good electrical connection can be provided between the power pad 33 and the signal pad 35.

[0183] This embodiment suppresses the performance degradation of the semiconductor module 10 caused by an excessive amount of the first bonding members 71. As a result, the semiconductor module 10 in which the performance degradation caused by the excessive first bonding members 71 is suppressed is provided.

[0184] Twenty-sixth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the recesses P86a and P86b are groove-shaped elongated in the Y direction. The recesses 86 can be provided in various shapes. In this embodiment, the recesses 86 are provided by the recesses Q86. The recesses Q86 include two grooves having longitudinal directions in both the Y direction (width direction) and the X direction (thickness direction). This embodiment shows a non-limiting example of the opening shape of the recesses. The recesses can have various opening shapes, such as a circle, a polygon, and the cross shape shown in the figure.

[0185] 32, wiring member Q80 is provided. Wiring member Q80 is arranged between the semiconductor element 30 and the first heat dissipation member 41 so as to overlap them. Wiring member Q80 defines an opening Q85 for accommodating the first joint member 71. Furthermore, wiring member Q80 has a recess Q86 on the wall surface of opening Q85.

[0186] Fig. 33 shows a cross section taken along line XXXIII-XXXIII in Fig. 32. The recess Q86 has a horizontal groove portion that extends in the Y direction and a vertical groove portion that extends in the X direction. The designations "vertical" and "horizontal" are for convenience and do not indicate the installation state of the semiconductor module 10. The horizontal groove portion is a groove having a longitudinal direction in the Y direction and communicates with the opening Q85 through a long and thin opening. The vertical groove portion is a groove having a longitudinal direction in the X direction and communicates with the opening Q85 through a long and thin opening. The horizontal groove portion and the vertical groove portion intersect. The horizontal groove portion and the vertical groove portion communicate with each other at those groove portions.

[0187] Twenty-seventh embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the recess Q86 extends straight in the main direction away from the opening, i.e., in the depth direction. In this embodiment, the recess Q86 is provided by the recess R86. The recess R86 also extends in a secondary direction intersecting the main direction away from the opening R85. The recess R86 includes two grooves having longitudinal directions in both the Y direction (width direction) and the X direction (thickness direction). This embodiment shows a non-limiting example of the internal shape of the recess. The recess can have an internal shape with various branching parts such as an F-shape, a T-shape, or a cross shape, or an internal shape with various bends such as a J-shape or an L-shape.

[0188] In FIG. 34, the wiring member 80 is provided by the wiring member R80. The wiring member R80 defines an opening R85 for the first bonding member 71. The wiring member R80 has a recess R86. The recess R86 opens to the inner wall surface of the opening R85. The recess R86 extends in a direction away from the opening R85. The direction away from the opening R85 can also be called the depth direction of the recess R86. Furthermore, the recess R86 has a branch portion that branches off from the depth direction at a position away from the opening R85. The recess R86 can have one or more branch portions. The branch portion may include an upward branch that extends upward in the direction of gravity with respect to the posture in the bonding process. In this case, the upward branch may be suitable for storing gas components. The gas components stored in the upward branch may adjust the pressure in the recess R86 and adjust the inflow of the bonding member 70 into the recess R86. The branch portion may include a downward branch that extends downward in the direction of gravity with respect to the posture in the joining process. In this case, the downward branch may be suitable for quickly storing the joining material 70 in a fluid state. The downward branch may store the joining material 70 in the early stage of the joining process and limit the amount of the joining material 70 flowing into the recess R86 in the later stage of the joining process.

[0189] Twenty-eighth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the amount of bonding material placed in the opening in the placement step may be less than the appropriate amount. In this case, the bonding material after the bonding step may contain voids. The voids may cause current concentration, heat concentration, a decrease in the amount of heat transfer, a decrease in the mechanical strength of the bonding material, and stress concentration in the bonding material. These defects caused by voids may also affect the performance of the semiconductor module 10. This embodiment suppresses defects caused by a lack of bonding material. In this embodiment, the recess 86 is provided by a recess S86.

[0190] In FIG. 35, the wiring member S80 defines an opening S85 for the first bonding member 71. The wiring member S80 has a recess S86. The recess S86 accommodates a preliminary bonding member S79. The preliminary bonding member S79 is used to bond the semiconductor element 30 and the first heat dissipation member 41 when the main first bonding member 71 is insufficient. The preliminary bonding member S79 is a bonding member provided in advance to compensate for the shortage of the main first bonding member 71. In the bonding process of the manufacturing method, the preliminary bonding member S79 may mix with the first bonding member 71 to form a continuous bonding member 70. In this case, the preliminary bonding member S79 does not remain in the recess S86 in the completed state of the semiconductor module 10. In rare cases, the preliminary bonding member S79 may remain in the recess S86 in the completed state of the semiconductor module 10. The illustrated example shows a case where the preliminary bonding member S79 remains. Alternatively, the illustrated example may be understood as showing the pre-joined member S79 before melting, prior to the joining process.

[0191] The preliminary bonding member S79 is placed in the recess S86 before the bonding step in the manufacturing method. In a typical example, the preliminary bonding member S79 is placed in the recess S86 in a preparation step. The preliminary bonding member S79 is placed so as not to fill the recess S86 before the bonding step. The preliminary bonding member S79 is placed so as to leave a cavity inside the recess S86 before the bonding step. The cavity is used to accommodate the excess portion of the first bonding member 71 when there is an excess. The preliminary bonding member S79 is also called a preform bonding member. When the bonding member 70 is a solder, the preliminary bonding member S79 is also called a preform solder.

[0192] In a preparation step or an arrangement step of the manufacturing method, the preliminary bonding member S79 is positioned in the recess S86. In the arrangement step, the preliminary bonding member S79 is arranged so as to face the first bonding member 71 before melting through the recess S86. In this state, the preliminary bonding member S79 and the first bonding member 71 are separate lumps of bonding members 70.

[0193] In the first half of the joining process, the preliminary joining member S79 and the first joining member 71 are heated and transition to a molten state. The preliminary joining member S79 in the molten state can flow in the recess S86. At the same time, the first joining member 71 can flow into the recess S86 and flow in the recess S86. When the preliminary joining member S79 in a flowing state meets the first joining member 71 in a flowing state, the preliminary joining member S79 and the first joining member 71 are mixed together and transition to a continuous state. When the preliminary joining member S79 and the first joining member 71 are cooled in the second half of the joining process, they harden again.

[0194] In the bonding process, if the amount of the first bonding members 71 is less than the appropriate amount, the preliminary bonding members S79 compensate for the shortage of the first bonding members 71. As a result, a good bonding state is formed between the semiconductor element 30 and the first heat dissipation member 41. On the other hand, if there is an excess of the first bonding members 71, the excess portion flows into the recess S86. As a result, a good bonding state is formed between the semiconductor element 30 and the first heat dissipation member 41. Thus, according to this embodiment, a good bonding state can be formed whether the amount of the first bonding members 71 is excessive or insufficient.

[0195] Twenty-ninth embodiment This embodiment is a modification based on the previous embodiment. In the previous embodiment, the recess 86 is provided to open into an opening that accommodates the first joint member 71. The recess 86 can be provided in various positions to absorb an excess amount of the joint member 70. This embodiment shows one non-limiting example of the position where the recess is provided. The recess 86 includes a recess T86a that opens into an opening that accommodates the third joint member 73.

[0196] In FIG. 36, the wiring member 80 is provided by the wiring member T80. The wiring member T80 has a recess T86. The recess T86 opens so as to communicate with the opening T85 that accommodates the first joint member 71. Furthermore, the wiring member T80 has a recess T86a. The recess T86a opens so as to communicate with the opening that accommodates the third joint member 73. The opening that accommodates the third joint member 73 is provided by the first joint portion 80a or a window portion formed in the resin layer 81 to form the first joint portion 80a. The recess T86a can accommodate an excess amount of the third joint member 73.

[0197] Thirtieth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the resin member 20 completely encases the wiring member 80 disposed between the signal pad 35 of the semiconductor element 30 and the signal terminal 61. In other words, at least a portion of the signal terminal 61 is enclosed within the resin member 20. Alternatively, a portion of the wiring member 80 may extend from the resin member 20.

[0198] 37, the wiring member 80 is provided by a wiring member U80. The wiring member U80 extends from the resin member 20. The wiring member U80 is joined to a signal terminal U61 at a second joint portion 80b by a fourth joint member 74. The signal terminal U61 is a terminal that provides a signal path. The signal terminal U61 can be provided by, for example, a terminal provided on a printed circuit board, a land on the printed circuit board, or a coated wire connected to the printed circuit board.

[0199] Thirty-first embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the signal terminal 61 and the wiring member 80 are arranged parallel to the semiconductor element 30 so as to partially overlap each other. Therefore, the signal terminal 61 extends parallel to the YZ plane. Alternatively, the signal terminal 61 may be arranged parallel to the XY plane. In this case, the flexibility of the wiring member 80 can be used to bend the direction of the signal path inside the resin member 20.

[0200] In FIG. 38, the wiring member 80 is provided by a wiring member V80. The wiring member V80 has a substantially right-angled bent portion V98 in the resin member 20. The semiconductor module 10 includes a plurality of signal terminals 61. The plurality of signal terminals 61 extend from the resin member 20 in parallel to the XY plane. The plurality of signal terminals 61 extend in parallel to the X direction. The plurality of signal terminals 61 are arranged in a row along the Y direction. The wiring member 80 is arranged between the plurality of signal pads 35 and the plurality of signal terminals 61 via the bent portion V98. In this embodiment, the flexibility of the wiring member V80 can be used to adjust the extending direction of the signal terminals 61 inside the resin member 20.

[0201] Other embodiments The disclosure in this specification and drawings, etc. is not limited to the exemplified embodiments. The disclosure includes the exemplified embodiments and modifications by those skilled in the art based thereon. For example, the disclosure is not limited to the combination of parts and / or elements shown in the embodiments. The disclosure can be implemented by various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure includes the omission of parts and / or elements of the embodiments. The disclosure includes the substitution or combination of parts and / or elements between one embodiment and another embodiment. The disclosed technical scope is not limited to the description of the embodiments. Some disclosed technical scopes are indicated by the description of the claims, and should be interpreted as including all modifications within the meaning and scope equivalent to the description of the claims.

[0202] The disclosure in the specification and drawings is not limited by the claims. The disclosure in the specification and drawings includes the technical ideas described in the claims, and extends to more diverse and broader technical ideas than the technical ideas described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification and drawings without being bound by the claims.

[0203] In the embodiment described in this specification, the semiconductor module 10 has the heat dissipation member 40 exposed on both sides of the plate-like outer shape. Alternatively, the heat dissipation member 40 may be disposed on only one side of the semiconductor module 10. For example, only the first heat dissipation member 41 or only the second heat dissipation member 42 may be disposed. Furthermore, the heat dissipation member 40 serves both as a member responsible for heat dissipation and a member providing a power path. Alternatively, the heat dissipation member 40 may be used solely as a member responsible for heat dissipation or solely as a member providing a power path. For example, the spacer member D77 can be used as a power terminal. [Explanation of symbols]

[0204] 10 Semiconductor module, 20 Resin member, 30 Semiconductor elements, 40 heat dissipation member, 61 signal terminal, 70 Joining members, 80 Wiring components.

Claims

1. a semiconductor device (30) having a signal pad (35) for a signal path and a power pad (33, 34) for a power path for a power greater than the power of the signal pad; a heat dissipation member (40) thermally joined to the semiconductor element (30); a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member; A metal signal terminal (61) arranged so as to be exposed from the resin member; a wiring member (80) that is housed in the resin member and is a member that is softer than the signal terminal, the wiring member (80) including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint portion (80a) that is connected to the signal pad, and a second joint portion (80b) that is connected to the signal terminal; Further, a bonding member (71, 73) is provided for bonding between the semiconductor element and the heat dissipation member and / or between the signal pad and the metal layer, The wiring member defines an opening surrounding the joining member, and has a recess (86) communicating with the opening.

2. 2. The semiconductor module according to claim 1, wherein the wiring member (B80) positions the semiconductor element and the heat dissipation member.

3. a semiconductor device (30) having a signal pad (35) for a signal path and a power pad (33, 34) for a power path for a power greater than the power of the signal pad; a heat dissipation member (40) thermally joined to the semiconductor element (30); a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member; A metal signal terminal (61) arranged so as to be exposed from the resin member; a wiring member (80) that is housed in the resin member and is a member that is softer than the signal terminal, the wiring member (80) including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint portion (80a) that is connected to the signal pad, and a second joint portion (80b) that is connected to the signal terminal; The wiring member (B80) is a semiconductor module that positions the semiconductor element and the heat dissipation member.

4. Further, a pair of power terminals (51a, 51b) electrically connected to the power pads are provided, 4. The semiconductor module according to claim 1, wherein the wiring member reaches between the pair of power terminals, and the pair of power terminals are positioned in a layered manner so as to overlap both sides of the wiring member.

5. a semiconductor device (30) having a signal pad (35) for a signal path and a power pad (33, 34) for a power path for a power greater than the power of the signal pad; a heat dissipation member (40) thermally joined to the semiconductor element (30); a resin member (20) that houses the semiconductor element so as to expose a portion of the heat dissipation member; A metal signal terminal (61) arranged so as to be exposed from the resin member; a wiring member (80) that is housed in the resin member and is a member that is softer than the signal terminal, the wiring member (80) including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint portion (80a) that is connected to the signal pad, and a second joint portion (80b) that is connected to the signal terminal; Further, a pair of power terminals (51a, 51b) electrically connected to the power pads are provided, The wiring member (C80) reaches between a pair of the power terminals, and the pair of the power terminals are positioned in a stacked manner so as to overlap both sides of the wiring member.

6. 6. The semiconductor module according to claim 1, wherein the semiconductor element comprises a plurality of semiconductor elements, the plurality of semiconductor elements being connected to the signal terminals by the wiring member.

7. 7. The semiconductor module of claim 1, wherein the wiring member has a metal layer (787) extending across both the signal pads and the power pads and bonded to the power pads.

8. 8. The semiconductor module according to claim 1, wherein the wiring member has a communication portion (88) through which the resin member penetrates.

9. 9. The semiconductor module according to claim 1, further comprising a conductive spacer member (D77) disposed between the power pad and the heat dissipation member.

10. 10. The semiconductor module according to claim 1, wherein the wiring member is insulated from the metal layer as a signal line and includes an additional metal layer (E90, M95, M96) for adjusting the rigidity of the wiring member.

11. 11. The semiconductor module according to claim 10, wherein the additional metal layer (E90) is arranged so as to overlap the metal layer and is grounded to a reference potential of the semiconductor element.

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