Diagnostic device, semiconductor manufacturing device system, semiconductor device manufacturing system, and diagnostic method

Abstract

To provide a diagnostic technique capable of determining an abnormality in an exhaust device or exhaust piping of a semiconductor manufacturing device while suppressing a variation due to a processing condition.SOLUTION: In a diagnostic device that diagnoses the condition of a semiconductor manufacturing device that includes a processing chamber in which a sample is processed, a transfer chamber that transfers the sample to the processing chamber and is connected to the processing chamber, a valve arranged between the processing chamber and the transfer chamber, an exhaust device that evacuates the processing chamber, and exhaust piping associated with the exhaust device, when the pressure in the transfer chamber reaches or exceeds a predetermined value, the presence or absence of an abnormality in the exhaust device or exhaust piping is determined on the basis of the pressure in the exhaust piping after the valve is opened, the predetermined value is a value obtained on the basis of the correlation between the pressure in the exhaust piping after the valve is opened and the pressure in the transfer chamber, and the valve being open is a case in which a sample is transferred from the transfer chamber to the processing chamber, or a case in which a sample is transferred from the processing chamber to the transfer chamber.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a diagnostic device, a semiconductor manufacturing device system, a semiconductor device manufacturing system, and a diagnostic method, and in particular to a technology that is effective when applied to a diagnostic device and a diagnostic method for detecting abnormalities in semiconductor manufacturing equipment that manufactures semiconductor devices. [Background technology]

[0002] In semiconductor manufacturing equipment, performance fluctuations and foreign matter adhesion occur in the processing chambers and peripheral devices that make up the semiconductor manufacturing equipment due to factors over time, which can cause the semiconductor device to stop operating or cause defects in the semiconductor devices formed on the semiconductor wafers.

[0003] For example, JP 2021-12654 A proposes a method for detecting abnormalities in semiconductor manufacturing equipment using sensor data from the semiconductor manufacturing equipment. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-12654 Summary of the Invention [Problem to be solved by the invention]

[0005] Japanese Patent Application Laid-Open No. 2021-12654 discloses a method for detecting anomalies by calculating the difference between a target value and sensor data (such as pressure data and temperature data) during processing of semiconductor manufacturing equipment. However, the values ​​of the sensor data vary depending on processing conditions. Therefore, if a single threshold value is set to determine anomalies, false reports or oversights may occur depending on the processing conditions, which is an issue.

[0006] An object of the present disclosure is to provide a diagnostic technique capable of determining an abnormality in an exhaust device or exhaust piping of a semiconductor manufacturing apparatus while suppressing variations due to processing conditions.

[0007] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0008] A brief summary of representative aspects of this disclosure is as follows.

[0009] A diagnostic device for diagnosing a state of a semiconductor manufacturing device including a processing chamber in which a sample is processed, a transfer chamber which transfers the sample to the processing chamber and is connected to the processing chamber, a valve disposed between the processing chamber and the transfer chamber, an exhaust device which exhausts the processing chamber, and an exhaust piping associated with the exhaust device, comprising: When the pressure in the transfer chamber becomes equal to or greater than a predetermined value, the presence or absence of an abnormality in the exhaust device or the exhaust piping is determined based on the pressure in the exhaust piping after the valve is opened; the predetermined value is a value obtained based on a correlation between a pressure in the exhaust pipe and a pressure in the transfer chamber after the valve is opened, The valve is in an open state when the sample is transferred from the transfer chamber to the processing chamber or when the sample is transferred from the processing chamber to the transfer chamber. Effect of the Invention

[0010] The above diagnostic device can determine an abnormality in the exhaust device or exhaust piping of the semiconductor manufacturing device while suppressing variations due to processing conditions, thereby reducing false alarms and oversights due to processing conditions. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a hardware configuration diagram of a semiconductor manufacturing equipment system according to an embodiment. [Diagram 2] FIG. 2 is a hardware configuration diagram of the processing device in FIG. [Diagram 3] FIG. 3 is an explanatory diagram of functional blocks of the diagnostic device of FIG. [Figure 4]4 is a diagram for explaining an example of data configuration of the device data, threshold data, and correlation calculation data in FIG. 3. FIG. [Diagram 5] FIG. 5 is a process flow diagram of the diagnostic device according to the embodiment. [Figure 6] FIG. 6 is another process flow diagram of the diagnostic device according to the embodiment. [Figure 7] FIG. 7 is a process flow diagram for determining a pressure threshold value of an exhaust pipe and a pressure threshold value of a transfer chamber according to the embodiment. [Figure 8] FIG. 8 is an explanatory diagram of a configuration example of the pressure in the exhaust pipe and the pressure in the transfer chamber of the semiconductor manufacturing apparatus according to the embodiment. [Figure 9] Figure 9 is an explanatory diagram of the exhaust piping pressure (during processing and after the valve is opened). [Figure 10] FIG. 10 is an explanatory diagram of the pressure in the transfer chamber (before and after application of the threshold). [Figure 11] FIG. 11 is an explanatory diagram of an example in which a threshold value for the pressure of the exhaust pipe and a threshold value for the pressure of the transfer chamber are determined from the pressure of the exhaust pipe and the pressure of the transfer chamber. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and the repeated description may be omitted. Note that the drawings may be shown more diagrammatically than the actual embodiment in order to clarify the description, but they are merely examples and do not limit the interpretation of the present invention. EXAMPLES

[0013] Fig. 1 is a hardware configuration diagram of a semiconductor manufacturing equipment system according to an embodiment. Fig. 2 is a hardware configuration diagram of a processing device in Fig. 1. Fig. 3 is an explanatory diagram of functional blocks of a diagnosis device in Fig. 1. Fig. 4 is a diagram explaining an example of data configuration of the equipment data, threshold data, and correlation calculation data in Fig. 3.

[0014] As shown in Fig. 1, the semiconductor manufacturing equipment system 100 includes a processing equipment (PPE) 101, a diagnostic equipment (DIE) 111, and a server (SRV) 117. The processing equipment (PPE) 101 is a semiconductor manufacturing equipment used to manufacture semiconductor devices, and is, for example, a plasma processing equipment such as a plasma etching equipment. The semiconductor manufacturing equipment system 100 can also be referred to as a semiconductor device manufacturing system. In the following description, the processing equipment (PPE) 101 may also be referred to as a semiconductor manufacturing equipment 101.

[0015] The processing device 101 and the diagnostic device 111 are connected by a first network line NWL1 for transmitting and receiving signals such as LAN wiring (LAN cable), USB wiring (USB cable), or wireless LAN. The diagnostic device 111 and the server 117 are connected by a second network line NWL2 for transmitting and receiving signals such as LAN wiring (LAN cable), USB wiring (USB cable), or wireless LAN.

[0016] The processing apparatus 101 includes a processing chamber (PRR) 102, a transfer chamber (COR) 103, an exhaust pipe (EPI) 104, a first exhaust system (EXP1) 105, a second exhaust system (EXP2) 106, a first pressure gauge (PPM) 107 for monitoring the pressure in the exhaust pipe 104, a second pressure gauge (CPM) 108 for monitoring the pressure in the transfer chamber 103, and a valve (VAL) 109.

[0017] The diagnostic device 111 is composed of a calculator such as a personal computer, and in this example includes an external interface circuit (EXIF) 112, a processor (PROC) 113, a memory (MEM) 114, and a storage (STG) 115. The memory 114 is composed of, for example, a semiconductor memory capable of high-speed reading or writing, such as a RAM (Random Access Memory). The storage 115 is composed of, for example, a large-capacity storage device, such as a HDD (Hard Disk Drive) or SSD (Solid State Drive).

[0018] In this example, the external interface circuit 112 is electrically connected to the processing device 101 via a network line NWL1, and also to the server 117 via a network line NWL2.

[0019] The diagnostic device 111 receives, for example, signal data (sensor data) of various sensors mounted on the processing device 101 from an external interface circuit 112 via a network line NWL1 by a data transfer (DTR) 110. The diagnostic device 111 transmits, for example, an output result (ORE) 116 such as a diagnosis result from the external interface circuit 112 to a server 117 via a network line NWL2.

[0020] In this example, the server 117 has a display unit that displays the output result 116 using a GUI 118 .

[0021] 2, a processing device (PPE) 101, which is a semiconductor manufacturing device, includes a processing chamber 102 in which a sample 212, which is a semiconductor wafer, is processed, a transfer chamber 103 which transfers the sample 212 to the processing chamber 102 and is connected to the processing chamber 102, and a valve 109 disposed between the processing chamber 102 and the transfer chamber 103. The processing device 101 also includes an exhaust pipe 104 connected to the processing chamber 102, a first exhaust device 105 and a second exhaust device 106 which are provided on the exhaust pipe 104 and exhaust the processing chamber 102, a first pressure gauge 107 which measures (monitors) the pressure of the exhaust pipe 104, and a second pressure gauge 108 which measures (monitors) the pressure of the transfer chamber 103.

[0022] The processing chamber 102 has a wafer stage 210 as a sample stage on which a sample 212 is placed, and a stage base 211 that supports the wafer stage 210. The sample 212 is placed on the wafer stage 210, and the inside of the processing chamber 102 is brought into a predetermined state (pressure, gas, etc.), and a desired process is performed on the sample 212. The desired process is, for example, a film formation process, an etching process, an ion implantation process, an oxidation process, etc.

[0023] The transfer chamber 103 is a temporary waiting place for the sample 212, and temporarily stores the sample 212 when the sample 212 is transferred into the processing chamber 102 and when the sample 212 is transferred out of the processing chamber 102. When the sample 212 is to be subjected to a desired process, the sample 212 is transferred (transferred) from the transfer chamber 103 to the processing chamber 102. When the sample 212 is transferred into the processing chamber 102, a valve 109 that isolates the processing chamber 102 and the transfer chamber 103 opens, and the processing chamber 102 and the transfer chamber 103 communicate with each other. Then, the sample 212 arranged in the transfer chamber 103 is placed on the wafer stage 210. After that, the valve 109 is closed to isolate the processing chamber 102 and the transfer chamber 103, and the processing chamber 102 is sealed. Then, the inside of the processing chamber 102 is brought into a desired state, and the sample 212 is subjected to a desired process. On the other hand, after the desired processing is performed on the sample 212, the sample 212 is unloaded from the processing chamber 102. When the sample 212 is unloaded (transported) from the processing chamber 102 to the transfer chamber 103, the valve 109 opens, and the processing chamber 102 and the transfer chamber 103 communicate with each other. Then, the sample 212 placed on the wafer stage 210 is unloaded to the transfer chamber 103. After that, the valve 109 closes, and the processing chamber 102 and the transfer chamber 103 are blocked from each other. In FIG. 2, the opening and closing direction of the valve 109 is shown as an arrow 215, and the upward movement of the valve 109 indicates that the valve 109 is opened, and the downward movement of the valve 109 indicates that the valve 109 is closed. The state in which the valve 109 is open refers to the case in which the sample 212 is transported from the transfer chamber 103 to the processing chamber 102, or the case in which the sample 212 is transported from the processing chamber 102 to the transfer chamber 103.

[0024] The first exhaust device 105 is, for example, a vacuum pump such as a turbo molecular pump. The second exhaust device 106 is, for example, a vacuum pump such as a dry pump. The processing chamber 102 connected to the exhaust pipe 104 is roughly evacuated to a predetermined vacuum level by the second exhaust device 106, and then is highly accurately evacuated to a predetermined high vacuum level by the first exhaust device 105. The high vacuum is, for example, a vacuum level that allows plasma generation.

[0025] The first pressure gauge 107 is connected to the exhaust pipe 104 and can measure (monitor) the pressure of the exhaust pipe 104. This makes it possible to measure (monitor) the pressure of the processing chamber 102 connected to the exhaust pipe 104. The pressure value measured by the first pressure gauge 107 (pressure value of the exhaust pipe 104) is transferred 110 to a diagnostic device 111.

[0026] The second pressure gauge 108 is connected to the transfer chamber 103 and can measure (monitor) the pressure in the transfer chamber 103. The pressure value measured by the second pressure gauge 108 (the pressure value in the transfer chamber 103) is transferred 110 to a diagnosis device 111.

[0027] 3, diagnostic device 111 configured by a computer is configured to be realized by a computer when processor 113 executes a software program (also called an application program) that realizes the functions of diagnostic device 111 stored in storage 115, for example. Diagnostic device 111 has a data collection unit (DAC) 303 and a diagnosis unit (DIG) 305. In diagnostic device 111, each function (303, 305) may be configured by a hardware circuit.

[0028] The data collection unit (DAC) 303 has the function of receiving data on pressure values ​​(the pressure value PE of the exhaust pipe 104 (the pressure value of the processing chamber 102) and the pressure value PT of the transfer chamber 103) transmitted by data transfer 110, and storing the data in the storage 115 as device data (DED) 304.

[0029] The diagnosis unit (DIG) 305 includes a processing unit (PRC) 306, threshold data (DTH) 307, and correlation calculation data (DCC) 308. The processing unit (PRC) 306 is realized by the processor 113 executing a software program. The threshold data (DTH) 307 and correlation calculation data (DCC) 308 are stored in the storage 115.

[0030] The correlation calculation data (DCC) 308 is composed of past history data of the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103 during a predetermined period after the valve 109 is opened. This past history data can be obtained, for example, from the device data (DED) 304. The predetermined period after the valve 109 is opened is not particularly limited, but can be, for example, a time range of 5 to 10 seconds (5 to 10 seconds) after the valve 109 is opened. Here, the maximum pressure is used as the abnormality detection method, but other variables (parameters) can also be used, and specifically, statistics of etc. are given as candidates for abnormality detection.

[0031] The processing unit (PRC) 306 plots (creates) a graph based on the correlation calculation data (DCC) 308. Then, the processing unit (PRC) 306 creates a regression curve (pressure value of exhaust pipe 104=f(P(pressure value of transfer chamber 103))) that represents the correlation between the pressure value of the transfer chamber 103 and the maximum pressure value of the exhaust pipe 104 based on the created graph. Then, the processing unit (PRC) 306 selects a predetermined number of the maximum pressure values ​​of the exhaust pipe 104 (for example, the top 10 maximum pressure values) and calculates an average value (PEVA10) of the selected top 10 maximum pressure values. The processing unit (PRC) 306 creates a threshold value PETH of the pressure value PE of the exhaust pipe 104 based on the average value (PEVA10) of the selected top 10 maximum pressure values. The threshold value PETH can be, for example, a pressure value between 85% and 95% of the average value (PEVA10), more preferably a pressure value of about 90%. The processor (PRC) 306 also generates a threshold value (also called a predetermined value) PTTH for the pressure value of the transfer chamber 103 by substituting the threshold value PETH into a regression curve (pressure value of the exhaust pipe 104=f(P(pressure value of the transfer chamber 103))). In other words, the predetermined value (threshold value PTTH) is calculated based on a regression curve that is a correlation between the maximum value of the pressure related to the exhaust device (105, 106) during a predetermined period after the valve 109 is opened and the pressure of the transfer chamber 103. The threshold values ​​PETH and PTTH are stored in the storage 115 as threshold data (DTH) 307. The threshold values ​​PETH and PTTH will be described in detail with reference to FIG. 7 and FIG. 11, which will be described later.

[0032] FIG. 4 shows an example of the data configuration of the device data (DED) 304, the threshold data (DTH) 307, and the data for correlation calculation (DCC) 308 in FIG.

[0033] The equipment data (DED) 304 is time-series data of the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103 measured by the first pressure gauge 107 and the second pressure gauge 108, and includes a date (Date), a time (Time), a valve open determination (VALOJ), the pressure PE of the exhaust pipe 104, and the pressure PT of the transfer chamber 103. The valve open determination (VALOJ) indicates the determination result of whether the valve 109 is in an open state (OPEN) or a closed state (CLOSE).

[0034] The threshold data (DTH) 307 includes a threshold value PETH of the pressure value PE of the exhaust pipe 104 and a threshold value PTTH of the pressure value PT of the transfer chamber 103.

[0035] The correlation calculation data (DCC) 308 includes a plurality of pairs of the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103.

[0036] The diagnostic device 111 is configured by a personal computer and includes a platform on which an application for detecting an abnormality in the exhaust devices (first exhaust device 105, second exhaust device 106) or exhaust pipe 104 of the semiconductor manufacturing equipment 101 is implemented. The diagnostic device 111 is connected via a network to the semiconductor manufacturing equipment 101, which includes a processing chamber 102 for processing a sample 212, a transfer chamber 103 connected to the processing chamber 102 for transferring the sample 212 to the processing chamber 102, a valve 109 for blocking between the processing chamber 102 and the transfer chamber 103, exhaust devices (105, 106) and exhaust pipe 104 connected to the processing chamber 102, and a first pressure gauge 107 for measuring (monitoring) the pressure of the exhaust pipe 104. The diagnostic device 111 judges the presence or absence of an abnormality in the exhaust devices (105, 106) or exhaust pipe 104 of the semiconductor manufacturing equipment 101, using a pressure value measured by the pressure gauge 107 for a predetermined period after the valve 109 is opened. That is, the diagnosis device 111 determines whether or not there is an abnormality in the exhaust device (105, 106) or the exhaust piping 104 related to the exhaust device (105, 106) based on the pressure related to the exhaust device (105, 106) after the valve 109 is opened.

[0037] Here, the operational flow of the diagnostic device 111 of the present disclosure for determining whether or not there is an abnormality will be described.

[0038] The diagnostic device 111 uses the pressure value in the exhaust pipe 104 for a predetermined period after the valve 109 is opened, for example, a predetermined period in the range of 5 to 10 seconds, to determine whether or not there is an abnormality in the exhaust device (105, 106) or the exhaust pipe 104 of the semiconductor manufacturing equipment 101. Since the pressure value in the exhaust pipe 104 for the predetermined period after the valve 109 is opened is used to determine whether or not there is an abnormality, it is not necessary to take into account fluctuations in the pressure value in the exhaust pipe 104 due to variations in the processing conditions in the processing chamber 102. This makes it possible to accurately determine whether or not there is an abnormality in the exhaust device (105, 106) or the exhaust pipe 104 of the semiconductor manufacturing equipment 101, while suppressing fluctuations in the pressure value in the exhaust pipe 104.

[0039] According to the findings of the present inventors, the pressure value PE of the exhaust pipe 104 measured by the first pressure gauge 107 and the second pressure gauge 108 and the pressure value PT of the transfer chamber 103 have a predetermined correlation. On the other hand, the pressure value of the exhaust pipe 104 measured by the first pressure gauge 107 may have variations (noise) in the measured pressure value even after the valve 109 is opened. Therefore, it has been found that it is preferable to introduce a threshold value (PETH) used to determine the pressure value PE of the exhaust pipe 104 in order to eliminate variations in the measured pressure value of the exhaust pipe 104. The same finding is also found in the maximum value of the current value of the first exhaust device 105. For the calculation of the threshold value (PETH), see the explanations of FIGS. 7 and 11 described later.

[0040] When the pressure value of the second pressure gauge 108 exceeds the threshold value PTTH, which is a predetermined threshold value (predetermined value), during a predetermined period after the valve 109 is opened (pressure value of the second pressure gauge 108>PTTH), the diagnostic device 111 determines that the exhaust device 105, 106 or the exhaust pipe 104 of the semiconductor manufacturing equipment 101 is abnormal. In other words, when the pressure in the transfer chamber 103 after the valve 109 is opened becomes equal to or greater than a predetermined value, the diagnostic device 111 determines whether or not there is an abnormality. This makes it possible to accurately determine an abnormality in the exhaust device 105, 106 or the exhaust pipe 104 of the semiconductor manufacturing equipment 101 while suppressing variations in the pressure value of the exhaust pipe 104 due to processing conditions for the sample in the semiconductor manufacturing equipment 101 and variations (noise) in the pressure value of the exhaust pipe 104 measured during a predetermined period after the valve 109 is opened.

[0041] In the above description, an example of the configuration of semiconductor manufacturing equipment system 100 is described in which diagnostic equipment 111 is provided and connected to semiconductor manufacturing equipment 101 via a network, but diagnostic equipment 111 is not limited to this example configuration. Diagnostic equipment 111 may be configured, for example, by software executed on server SRV, and by connecting server SRV to semiconductor manufacturing equipment 101 via a network.

[0042] Next, an abnormality diagnosis flow according to a diagnostic algorithm implemented by diagnostic device 111 will be described with reference to Fig. 5. Fig. 5 is a process flow diagram of a diagnostic device according to an embodiment. The process flow according to this diagnostic method shows an abnormality diagnosis flow according to a diagnostic algorithm. Fig. 5 shows a diagnostic method including an operation flow 50 of semiconductor manufacturing equipment 101 and an operation flow 51 of abnormality diagnosis of diagnostic device 111.

[0043] First, an operational flow 50 of the semiconductor manufacturing equipment 101 will be described.

[0044] An operational flow 50 of the semiconductor manufacturing equipment 101 includes steps S100, S101, and S103.

[0045] Step S100: The valve 109 is changed from a closed state (Closed) to an open state (Open).

[0046] Step S101: With the valve 109 open, a wafer, which is the sample 212 before processing, is carried into the inside of the transfer chamber 102 from the transfer chamber 103. Alternatively, a wafer, which is the sample 212 after processing, is carried out from the processing chamber 102 into the transfer chamber 103.

[0047] Step S102: The valve 109 is changed from an open state (Open) to a closed state (Closed). In steps S100 to S102, the first pressure gauge 107 and the second pressure gauge 108 measure the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103, and transfer 110 the data to a data acquisition unit (DAC) 303 of the diagnostic device 111, and the time-series data is stored in the device data (DED) 304.

[0048] FIG. 8 is an explanatory diagram of a configuration example of the pressure PE of the exhaust pipe 104 and the pressure PT of the transfer chamber 103 of the semiconductor manufacturing equipment 101 according to the embodiment. In FIG. 8, the horizontal axis of the graph 81 indicates time T, and the vertical axis indicates the pressure value PE of the exhaust pipe 104 measured by the first pressure gauge 107. The horizontal axis of the graph 82 indicates time T, and the vertical axis indicates the pressure value PT of the transfer chamber 103 measured by the second pressure gauge 108. 83 indicates a period during which the valve 109 is open (Open). TA indicates a predetermined period after the valve 109 is open (Open). The predetermined period TA is, for example, in the range of 5 seconds to 10 seconds. The pressure value PE of the exhaust pipe 104 during the predetermined period TA after the valve 109 is open (Open) is used to determine whether or not there is an abnormality in the exhaust device (105, 106) or the exhaust pipe 104 of the semiconductor manufacturing equipment 101.

[0049] As shown in FIG. 5, the operation flow 51 of the diagnostic device 111 has steps S200, S201, S202, and S203.

[0050] Step S200: The processing unit 306 of the diagnostic device 111 acquires from the data collection unit (DAC) 303 time series data (see FIG. 8) regarding the pressure value PE of the exhaust pipe 104 of the processing chamber 102 and the pressure value PT of the transfer chamber 103 after the valve 109 is in the open state (Open).

[0051] Step S201: The processing unit 306 of the diagnostic device 111 calculates the pressure value PE of the exhaust pipe 104 of the processing chamber 102 within a predetermined time TA after the valve 109 is in an open state (Open) from the acquired time-series data.

[0052] Step S202: The processor 306 substitutes the pressure value PE of the exhaust pipe 104 calculated in step S201 into the resultant pressure.

[0053] Step S203: When the resultant pressure is greater than the threshold value PETH of the pressure value PE in the exhaust pipe 104 (pressure value PE in the exhaust pipe 104 > PETH), the processing unit 306 issues an abnormality alarm. On the other hand, when the resultant pressure is not greater than the threshold value PETH (pressure value PE in the exhaust pipe 104 < PETH), the operation flow of the abnormality diagnosis is terminated without issuing an abnormality alarm. Here, the threshold value PETH of the pressure value PE in the exhaust pipe 104 can be referred to the descriptions of FIGS. 7 and 11 described later.

[0054] That is, the steps (S200 - S203) for determining the presence or absence of an abnormality in the exhaust device (105, 106) or the exhaust pipe 104 related to the exhaust device (105, 106) based on the pressure related to the exhaust device (105, 106) after the valve 109 is opened are executed by an application for diagnosing the state of the semiconductor manufacturing apparatus 101.

[0055] FIG. 9 is an explanatory diagram of the pressure PE (during processing and after the valve is opened) in the exhaust pipe 104. In FIG. 9, the graph 91 is an example of the pressure value PE of the exhaust pipe 104 during processing the sample 212 in the processing chamber 102, where the horizontal axis represents time T and the vertical axis represents the pressure value PE of the exhaust pipe 104. The graph 92 is an example of the pressure value PE of the exhaust pipe 104 for a predetermined time TA after the valve 109 is in the open state (Open), where the horizontal axis represents time T and the vertical axis represents the pressure PE of the exhaust pipe 104.

[0056] As shown in the graph 91, it can be seen that the pressure value PE of the exhaust pipe 104 during processing the sample 212 in the processing chamber 102 varies to a high pressure value or a low pressure value according to the processing conditions.

[0057] On the other hand, as shown in graph 92, the pressure value PE of exhaust pipe 104 for a predetermined time TA after valve 109 is open (Open) has less variation in the pressure value PE compared to the pressure value PE of exhaust pipe 104 shown in graph 91. In other words, when detecting an abnormality in exhaust device 105, 106 or exhaust pipe 104 of semiconductor manufacturing equipment 101, by detecting the abnormality based on the pressure value PE of exhaust pipe 104 for a predetermined time TA after valve 109 is open (Open), it is possible to detect an abnormality in exhaust device 105, 106 or exhaust pipe 104 of semiconductor manufacturing equipment 101 while suppressing variation in the pressure value PE due to processing conditions.

[0058] In the graph 92, although the variation in the pressure value PE due to the processing conditions is suppressed, it can be seen that some variation (noise) occurs in the pressure value PE. Therefore, it is preferable to set a threshold value PETH for the pressure value PE of the exhaust pipe 104, and determine whether or not to issue an abnormality report to notify that there is an abnormality in the exhaust devices 105, 106 or the exhaust pipe 104 of the conductor manufacturing equipment 101, depending on whether the pressure value PE of the exhaust pipe 104 is greater than the threshold value PETH. This makes it possible to accurately determine an abnormality in the exhaust devices 105, 106 or the exhaust pipe 104 of the semiconductor manufacturing equipment 101, while suppressing the variation (noise) in the pressure value of the exhaust pipe 104 measured during a predetermined period after the valve 109 is opened.

[0059] Next, another example of an abnormality diagnosis flow related to the diagnostic algorithm implemented by diagnostic device 111 will be described with reference to Fig. 6. Fig. 6 is another process flow diagram of the diagnostic device according to the embodiment. This process flow shows an abnormality diagnosis flow related to the diagnostic algorithm. Fig. 6 shows a diagnostic method including an operation flow 50 of semiconductor manufacturing equipment 101 and an operation flow 61 of abnormality diagnosis of diagnostic device 111.

[0060] The operational flow 50 of the semiconductor manufacturing equipment 101 is the same as the operational flow 50 of the semiconductor manufacturing equipment 101 in FIG. 5, so a duplicated description will be omitted.

[0061] An operation flow 61 of the abnormality diagnosis of the diagnostic device 111 includes steps S200, S301, S302, S303, S304, and S203.

[0062] Step S200: The processing unit 306 of the diagnostic device 111 acquires from the data collection unit (DAC) 303 time series data (see FIG. 8) regarding the pressure value PE of the exhaust pipe 104 of the processing chamber 102 and the pressure value PT of the transfer chamber 103 after the valve 109 is in the open state (Open).

[0063] Step S301: The processing unit 306 of the diagnostic device 111 calculates (extracts) the maximum pressure value PE of the exhaust pipe 104 of the processing chamber 102 within a predetermined time TA after the valve 109 is in an open state (Open) from the acquired time-series data.

[0064] Step S302: The processing unit 306 of the diagnosis device 111 judges whether the pressure value PT of the transfer chamber 103 within a predetermined time TA after the valve 109 is in an open state (Open) is equal to or greater than the threshold value PTTH of the pressure value PT of the transfer chamber 103. If the pressure value PT of the transfer chamber 103 within the predetermined time TA is equal to or greater than the threshold value PTTH (PT>PTTH) (Yes), proceed to step S303. If the pressure value PT of the transfer chamber 103 within the predetermined time TA is not equal to or greater than the threshold value PTTH (PT>PTTH) (No), proceed to step S304.

[0065] Step S303: The processor 306 substitutes the maximum pressure value of the exhaust pipe 104 calculated in step S201 into the resultant pressure.

[0066] Step S304: The processing unit 306 invalidates the result pressure, and ends the operation flow of the abnormality diagnosis.

[0067] Step S203: When the resultant pressure is greater than the threshold value PETH of the pressure value PE in the exhaust pipe 104 (pressure value PE of the exhaust pipe 104 > PETH), the processing unit 306 issues an abnormality warning. On the other hand, when the resultant pressure is not greater than the threshold value PETH (pressure value PE of the exhaust pipe 104 < PETH), the operation flow of the abnormality diagnosis is terminated without issuing an abnormality warning.

[0068] That is, the steps (S200, S301 - S304, S203) for determining the presence or absence of an abnormality in the exhaust device (105, 106) or the exhaust pipe 104 related to the exhaust device (105, 106) based on the pressure related to the exhaust device (105, 106) after the valve 109 is opened are executed by an application for diagnosing the state of the semiconductor manufacturing apparatus 101.

[0069] Next, with reference to FIGS. 7, 10, and 11, the threshold value PETH of the pressure value PE in the exhaust pipe 104 and the threshold value PTTH of the pressure value PT in the transfer chamber 103 will be described. FIG. 7 is a flowchart for determining the pressure threshold value (PETH) of the exhaust pipe 104 and the pressure threshold value (PTTH) of the transfer chamber 103 according to the embodiment. FIG. 10 is an explanatory diagram of the pressure PT (before and after applying the threshold value) in the transfer chamber 103. FIG. 11 is an explanatory diagram of an example for determining the threshold value PETH of the pressure PE in the exhaust pipe 104 and the threshold value PTTH of the pressure PT in the transfer chamber 103 from the correlation calculation data (DCC) of the pressure PE in the exhaust pipe 104 and the pressure PT in the transfer chamber 103.

[0070] FIG. 7 shows a processing flow for the processing unit 306 to determine the threshold value PTTH of the pressure value PT in the transfer chamber 103, and this processing flow is executed by the processing unit 306 at an arbitrary timing. The processing flow includes step S400, step S401, step S402, step S403, and step S404.

[0071] Step S400: The processing unit (PRC) 306 plots (creates) a graph based on the correlation calculation data (DCC) 308. The correlation calculation data (DCC) 308 is configured from past history data of the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103 during a predetermined period after the valve 109 is opened. This past history data can be obtained, for example, from the device data (DED) 304. The predetermined period after the valve 109 is opened is not particularly limited, but can be, for example, a time range of 5 to 10 seconds (5 to 10 seconds) after the valve 109 is opened.

[0072] Step S401: The processor (PRC) 306 generates a regression curve RC between the pressure value PT of the transfer chamber 103 and the maximum pressure value of the exhaust pipe 104 based on the created graph (see FIG. 11). That is, since the pressure value PE of the exhaust pipe 104 and the pressure value PT of the transfer chamber 103 have a predetermined correlation, a regression curve RC is created between the pressure value PT of the transfer chamber 103 and the maximum pressure value of the pressure value PE of the exhaust pipe 104 of the processing chamber 102 for which an abnormality is to be determined. The regression curve RC is expressed by, for example, the following equation.

[0073] Pressure value PE of exhaust pipe 104 = f (P (pressure value PT of transfer chamber 103)) Step S402: The processing unit (PRC) 306 selects a top predetermined number of maximum pressure values ​​(for example, the top 10 maximum pressure values) of the exhaust pipe 104 (see FIG. 11).

[0074] Step S403: Calculate the average value (PEVA10) of the top 10 selected maximum pressure values ​​(see FIG. 11).

[0075] Step S404: The processing unit (PRC) 306 generates a threshold value PETH for the pressure value PE of the exhaust pipe 104 based on the average value (PEVA10) of the top 10 selected maximum pressure values. The threshold value PETH can be, for example, a pressure value between 85% and 95% of the average value (PEVA10), more preferably a pressure value about 90% of the average value (PEVA10). The processing unit (PRC) 306 also generates a threshold value PTTH for the pressure value PT of the transfer chamber 103 by substituting the threshold value PETH into the regression curve RC. The threshold values ​​PETH and PTTH are stored in the storage 115 as threshold value data (DTH) 307 by the processing unit (PRC) 306.

[0076] By setting the threshold value PTTH of the pressure value PT of the transfer chamber 103 obtained in Fig. 7, it is possible to suppress the variation (noise) shown in graph 92 of Fig. 10 (same as graph 92 of Fig. 9). Graph 93 of Fig. 10 is an example of the pressure value PE of the exhaust pipe 104 for a predetermined time TA after the valve 109 is in an open state (Open) when the threshold value PTTH of the pressure value PT of the transfer chamber 103 is used, where the horizontal axis indicates time T and the vertical axis indicates the pressure PE of the exhaust pipe 104. In other words, it can be seen that by using the threshold value PTTH, the variation of the pressure value PE of the exhaust pipe 104 for a predetermined time TA after the valve 109 is in an open state (Open) is suppressed.

[0077] In other words, by using the pressure value PE of the exhaust pipe 104 at a predetermined time TA after the valve 109 opens, it is possible to suppress variations due to processing conditions (see graphs 91 and 92 in FIG. 9). Also, by setting a threshold value (PTTH) for the pressure value PE of the transfer chamber 103, it is possible to improve the variations by about 71% (see graph 93 in FIG. 10) from a state in which there are variations due to processing conditions (see graph 91 in FIG. 9). Although the pressure value has been described here, the same effect can be obtained by using statistics of the current value of the first exhaust device 105.

[0078] According to the diagnosis device of the embodiment, it is possible to determine whether or not there is an abnormality in the exhaust device or exhaust piping of the semiconductor manufacturing device while suppressing variations due to processing conditions.

[0079] The invention made by the inventor has been specifically described above based on examples. However, it goes without saying that the present invention is not limited to the above-mentioned embodiments and examples, and various modifications are possible. [Explanation of symbols]

[0080] 100: Semiconductor manufacturing equipment system 101: Semiconductor manufacturing equipment (processing equipment) 102: Processing room 103: Transport room 104: Exhaust pipe 105: First exhaust device 106: Second exhaust device 107: First pressure gauge 108: Second pressure gauge 109: Valve 111: Diagnostic equipment 117: Server 210: Wafer stage 212: Sample

Claims

1. A diagnostic device for diagnosing a state of a semiconductor manufacturing device including a processing chamber in which a sample is processed, a transfer chamber which transfers the sample to the processing chamber and is connected to the processing chamber, a valve disposed between the processing chamber and the transfer chamber, an exhaust device which exhausts the processing chamber, and an exhaust piping associated with the exhaust device, comprising: When the pressure in the transfer chamber becomes equal to or greater than a predetermined value, the presence or absence of an abnormality in the exhaust device or the exhaust piping is determined based on the pressure in the exhaust piping after the valve is opened; the predetermined value is a value obtained based on a correlation between a pressure in the exhaust pipe and a pressure in the transfer chamber after the valve is opened, A diagnostic device characterized in that the valve is in an open state when the sample is being transported from the transport chamber to the processing chamber or when the sample is being transported from the processing chamber to the transport chamber.

2. 2. A semiconductor manufacturing equipment system comprising the diagnostic device according to claim 1, wherein the semiconductor manufacturing equipment is connected via a network.

3. 3. The semiconductor manufacturing equipment system according to claim 2, 2. A semiconductor manufacturing equipment system, wherein the diagnostic device is a personal computer.

4. A semiconductor manufacturing system including a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus including a processing chamber in which a sample is processed, a transfer chamber which transfers the sample to the processing chamber and is connected to the processing chamber, a valve disposed between the processing chamber and the transfer chamber, an exhaust device which exhausts the processing chamber, and an exhaust piping associated with the exhaust device, the semiconductor manufacturing apparatus being connected to the processing chamber via a network, and the system including a platform on which an application for diagnosing a state of the semiconductor manufacturing apparatus is implemented, When the pressure in the transfer chamber becomes equal to or greater than a predetermined value, a step of determining whether or not there is an abnormality in the exhaust device or the exhaust piping based on the pressure in the exhaust piping after the valve is opened is executed by the application; the predetermined value is a value obtained based on a correlation between a pressure in the exhaust pipe and a pressure in the transfer chamber after the valve is opened, A semiconductor device manufacturing system, characterized in that the valve is in an open state when the sample is being transported from the transport chamber to the processing chamber or when the sample is being transported from the processing chamber to the transport chamber.

5. A diagnostic method for diagnosing a state of a semiconductor manufacturing apparatus including a processing chamber in which a sample is processed, a transfer chamber which transfers the sample to the processing chamber and is connected to the processing chamber, a valve disposed between the processing chamber and the transfer chamber, an exhaust device which exhausts the processing chamber, and an exhaust piping associated with the exhaust device, comprising: a step of determining whether or not there is an abnormality in the exhaust device or the exhaust piping based on the pressure in the exhaust piping after the valve is opened when the pressure in the transfer chamber is equal to or higher than a predetermined value; the predetermined value is a value obtained based on a correlation between a pressure in the exhaust pipe and a pressure in the transfer chamber after the valve is opened, A diagnostic method characterized in that the valve is in an open state when the sample is transported from the transport chamber to the processing chamber or when the sample is transported from the processing chamber to the transport chamber.

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