Electrostatic Pallets and Bases

Abstract

The present invention provides an electrostatic pallet and base. The electrostatic pallet includes a pallet body, a voltage supplying member, and a plurality of suction members, the plurality of suction members being spaced apart from one another on the pallet body, each of which includes an insulating layer, an electrode layer, and a dielectric layer arranged in sequence in a direction away from the pallet body, the voltage supplying member being arranged between the suction members and the pallet body and electrically connected to the electrode layers of the plurality of suction members, the voltage supplying member supplying a DC voltage to the electrode layers of each of the suction members, thereby allowing the plurality of suction members to suction a plurality of wafers in a one-to-one correspondence. The electrostatic pallet and base of the present invention can reduce the difficulty and cost of processing a multi-wafer electrostatic pallet, improve the coupling efficiency of high frequency waves, and improve the efficiency of semiconductor processing.

Description

[Technical field]

[0001] The present invention relates to the field of semiconductor device technology, and more particularly to electrostatic pallets and bases. [Background technology]

[0002] In recent years, with the development of miniLED and microLED markets, the multi-sheet mechanical pallets used for traditional LEDs can no longer meet the market requirements for wafer edge utilization and uniformity. Electrostatic pallets do not require the cover plate used in mechanical chucks to press the wafer, but instead use Coulomb force (also known as electrostatic force) to attract the wafer, allowing the wafer edge to be fully exposed to the semiconductor process environment, improving edge utilization and uniformity. Therefore, to deal with traditional multi-chip LEDs, multi-sheet electrostatic pallets have been developed, which provide multiple wafer loading positions and effectively solve the problems of low inter-wafer uniformity, intra-wafer uniformity and low edge utilization, improving the competitiveness of the machine.

[0003] A conventional multi-wafer electrostatic pallet includes a sintered ceramic substrate, a dielectric layer, an electrode layer and an insulating layer sintered on the substrate from top to bottom, and in the semiconductor process, a DC voltage is supplied to the electrode layer to form a Coulomb force between the electrode layer and a plurality of wafers, so that the plurality of wafers are attracted to the dielectric layer, and a radio frequency (abbreviated as RF) is coupled to the electrode layer, so that the plasma is attracted and the wafers are impacted and etched. Considering the strength of the multi-wafer electrostatic pallet structure, the insulating layer in the substrate is ceramic, and its thickness (for example, 1.5 mm to 2 mm) should also be increased. In addition, in order to ensure that the radio frequency smoothly attracts the plasma through the insulating layer and the dielectric layer, the electrode layer should include a plurality of layer structures spaced apart from each other in the direction from the insulating layer to the dielectric layer, so that the radio frequency is gradually coupled from the layer structure close to the insulating layer through the plurality of layer structures to the layer structure close to the dielectric layer. In addition, the electrode layer should also include an electrical connection structure that can electrically connect the plurality of layer structures, so that the DC voltage can be supplied to the layer structure close to the dielectric layer through the plurality of layer structures.

[0004] However, the greater the number of electrode layers in the layer structure, the greater the difficulty and cost of the sintering process technology for the electrical connection structure. In addition, the thicker the insulating layer, the more severely it affects the high frequency coupling efficiency, and as a result, affects the etching rate. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art by proposing an electrostatic pallet and base that can reduce the processing difficulty and cost of multi-wafer electrostatic pallets, improve the coupling efficiency of high frequency waves, and improve the efficiency of semiconductor processes. [Means for solving the problem]

[0006] In order to achieve the objects of the present invention, there is provided an electrostatic pallet for adsorbing a plurality of wafers, the electrostatic pallet comprising a pallet body, a voltage supply member, and a plurality of suction members, the plurality of suction members being provided at intervals on the pallet body, each of the suction members including an insulating layer, an electrode layer and a dielectric layer which are provided in order along a direction away from the pallet body, the voltage supply member being provided between the suction members and the pallet body and electrically connected to the electrode layers of the plurality of suction members, and the voltage supply member supplying a DC voltage to the electrode layer of each of the suction members, thereby causing the plurality of wafers to be adsorbed in one-to-one correspondence by the plurality of suction members.

[0007] Optionally, the electrostatic pallet further includes a positioning member, the positioning member being provided on the pallet body, the positioning member having a plurality of positioning through holes spaced apart from one another, and the plurality of suction members being provided in one-to-one correspondence with the plurality of positioning through holes.

[0008] Optionally, a through hole is provided in each of the insulating layers of each of the suction members, the through hole penetrating the insulating layer to the electrode layer, the voltage supply member includes a lead structure, the lead structure has a retract end and a supply end, the retract end is used for electrically connecting to a DC power source, the number of the supply ends is the same as the number of the suction members, and the supply ends are electrically connected to the electrode layer through the through hole.

[0009] Optionally, the lead structure includes a lead-in line, a plurality of supply lines, and an annular line having an opening, one end of the lead-in line electrically connected to the annular line and the other end being the lead-in end, and the plurality of supply lines are spaced apart circumferentially along the annular line, each of the supply lines having one end electrically connected to the annular line and the other end being the supply end.

[0010] Optionally, the voltage supply member further includes an insulating sleeve and a plurality of elastic conductive members, the insulating sleeve being fitted onto the outside of the lead-in line, the plurality of supply lines and the annular line, the plurality of elastic conductive members being provided in one-to-one correspondence with the plurality of supply ends, and the plurality of elastic conductive members being in elastic electrical contact with the electrode layers of the plurality of suction members in one-to-one correspondence.

[0011] Optionally, the pallet body is provided with a first groove and a retraction passage, the shape of the first groove is consistent with the shape of the voltage supply member, the voltage supply member is fitted into the first groove, the retraction passage communicates with the first groove and penetrates the pallet body, and the retraction end is electrically connected to the DC power source.

[0012] Optionally, the pallet body is provided with a plurality of second grooves spaced apart from one another, the second grooves communicating with the portions of the first grooves into which the supply ends are fitted, the shape of each of the second grooves conforming to the shape of each of the suction members, and the suction members corresponding one-to-one to the second grooves.

[0013] Optionally, each said suction member is adhered to said second groove.

[0014] Optionally, the insulating layer has a thickness between 0.6 mm and 0.8 mm, the electrode layer has a thickness between 0.03 mm and 0.04 mm, and the dielectric layer has a thickness between 0.25 mm and 0.35 mm.

[0015] Optionally, a material of the insulating layer includes ceramic and a material of the pallet body includes metal.

[0016] The present invention includes a chuck and the electrostatic pallet of the present invention, the electrostatic pallet further providing a base that is mounted on the chuck and is used to attract a plurality of the wafers.

[0017] Optionally, the base further includes a power supply assembly and a radio frequency supply assembly, the power supply assembly being electrically connected to the voltage supply member, the power supply assembly being electrically connected to the DC power source and used to supply a DC voltage supplied from the DC power source to the voltage supply member, and the radio frequency supply assembly being electrically connected to the chuck and used to supply radio frequency power to the electrostatic pallet by the chuck. Effect of the Invention

[0018] The present invention has the following beneficial effects:

[0019] The electrostatic pallet according to the present invention is designed with a pallet body, a voltage supply member, a positioning member, and a plurality of chucking members that are independent of each other, and the plurality of chucking members are provided in a plurality of positioning through holes of the positioning member, so that the voltage supply member is provided between the chucking member and the pallet body, and the pallet body can be used to mount the voltage supply member and the plurality of chucking members, so that the strength of the structure of the electrostatic pallet can be ensured by the pallet body, and the strength of the structure of the electrostatic pallet can be ensured without relying on the chucking members for chucking a plurality of wafers. With this design, it is not necessary to design the insulating layer of the chucking member to be thick to ensure the strength of the structure of the electrostatic pallet, that is, the insulating layer of the chucking member of the electrostatic pallet according to the present invention can be designed to be thinner than the insulating layer of the multi-wafer electrostatic pallet in the prior art, and thus the high frequency can more easily attract the plasma through the insulating layer and the dielectric layer of the chucking member, which further avoids the energy loss of the high frequency and improves the coupling efficiency of the high frequency. In addition, the electrode layers of the multiple attraction members of the electrostatic pallet according to the present invention are all located on the same layer, and there is no need to design an electrical connection structure to electrically connect the multiple electrode layers located on different layers as in the prior art, and only a voltage supply member is required to supply a DC voltage to the electrode layer of each attraction member. With the above design, the technical solution of the present invention can reduce the difficulty and cost of processing the multi-wafer electrostatic pallet, make it possible to process the multi-wafer electrostatic pallet, improve the coupling efficiency of high frequency waves, and improve the etching rate, thereby improving the efficiency of the semiconductor process.

[0020] The base of the present invention is provided with an electrostatic pallet of the present invention on a chuck, and uses the electrostatic pallet of the present invention to adsorb multiple wafers, thereby reducing the difficulty and cost of processing the multi-wafer electrostatic pallet, making it possible to process the multi-wafer electrostatic pallet, improving the coupling efficiency of high frequency waves, and improving the efficiency of the semiconductor process. [Brief description of the drawings]

[0021] [Figure 1]FIG. 2 is a schematic exploded view of the electrostatic pallet according to the embodiment of the present invention; [Diagram 2] 1 is a schematic diagram of a partial cross-sectional three-dimensional structure of an electrostatic pallet according to an embodiment of the present invention. [Diagram 3] 1 is a schematic diagram of a partial cross-sectional side structure of an electrostatic pallet according to an embodiment of the present invention; [Figure 4] 2 is a schematic front view of an adsorption member of an electrostatic pallet according to an embodiment of the present invention; FIG. [Diagram 5] 2 is a schematic diagram of a side cross-sectional structure of an attraction member of an electrostatic pallet according to an embodiment of the present invention; FIG. [Figure 6] FIG. 2 is a schematic front view of a voltage supply member of an electrostatic pallet according to an embodiment of the present invention; [Figure 7] FIG. 2 is a schematic diagram showing the three-dimensional structure of a voltage supply member of an electrostatic pallet according to an embodiment of the present invention; [Figure 8] FIG. 2 is a schematic front view of the pallet body of the electrostatic pallet according to an embodiment of the present invention; [Figure 9] FIG. 2 is a structural schematic diagram of a base according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] In order to make those skilled in the art better understand the technical solutions of the present invention, the electrostatic pallet and base of the present invention will be described in detail hereinafter with reference to the drawings.

[0023] 1 to 5, an embodiment of the present invention provides an electrostatic pallet 2 for attracting a plurality of wafers 6, the electrostatic pallet 2 including a pallet body 21, a voltage supply member 22, and a plurality of attracting members 23, the plurality of attracting members 23 being provided on the pallet body 21. Optionally, the electrostatic pallet 2 may further include a positioning member 25, the material of which may include, for example, quartz, or other insulating and high-temperature resistant materials may be used. The positioning member 25 is provided on the pallet body 21, and the positioning member 25 has a plurality of positioning through holes 251 provided at intervals, and the plurality of attracting members 23 are provided in one-to-one correspondence with the plurality of positioning through holes 251. By providing the positioning member 25, the plurality of positioning through holes 251 formed at intervals in the positioning member 25 can not only position the plurality of suction members 23, but also position the plurality of wafers 6 in one-to-one correspondence with the plurality of positioning through holes 251 when the plurality of suction members 23 suction the plurality of wafers 6 in one-to-one correspondence, and use of the plurality of positioning through holes 251 can be used to position the plurality of wafers 6 in one-to-one correspondence, thereby preventing the wafers 6 from moving during the semiconductor process, and further improving the stability of the use of the electrostatic pallet 2 and the stability of the semiconductor process. Of course, in actual applications, the positioning of the suction members 23 can be realized using any other structure, or the plurality of suction members 23 can be directly fixed to the pallet body 21 using a method such as adhesion, or the wafers 6 on the suction members 23 can be positioned using any other structure, but the embodiment of the present invention is not particularly limited.

[0024] Each suction member 23 includes an insulating layer 231, an electrode layer 232, and a dielectric layer 233, all of which are arranged in sequence along the direction away from the pallet body 21, and the voltage supply member 22 is arranged between the suction member 23 and the pallet body 21 and is electrically connected to the electrode layers 232 of the multiple suction members 23. The voltage supply member 22 supplies a DC voltage to the electrode layers 232 of each suction member 23, causing the multiple suction members 23 to suction multiple wafers 6 in a one-to-one correspondence.

[0025] The electrostatic pallet 2 in accordance with an embodiment of the present invention is designed by designing a pallet body 21, voltage supply member 22, positioning member 25, and multiple suction members 23 that are independent of each other, and by providing the multiple suction members 23 in multiple positioning through holes 251 of the positioning member 25, the voltage supply member 22 is provided between the suction member 23 and the pallet body 21, and the pallet body 21 can be used to place the voltage supply member 22 and the multiple suction members 23. As a result, the structural strength of the electrostatic pallet 2 can be ensured by the pallet body 21, and the structural strength of the electrostatic pallet 2 can be ensured without relying on the suction members 23 for adsorbing the multiple wafers 6. With this design, it is not necessary to design the insulating layer 231 of the attraction member 23 to be thick in order to ensure the strength of the structure of the electrostatic pallet 2, i.e., the insulating layer 231 of the attraction member 23 of the electrostatic pallet 2 according to the embodiment of the present invention can be designed to be thinner than the insulating layer 231 of the multi-sheet electrostatic pallet 2 in the prior art, so that the high frequency can more easily attract the plasma through the insulating layer 231 and the dielectric layer 233 of the attraction member 23, further avoiding the energy loss of the high frequency and improving the coupling efficiency of the high frequency. In addition, the multiple attraction members 23 of the electrostatic pallet 2 according to the embodiment of the present invention are all mounted on the pallet body 21, so that the electrode layers 232 of the multiple attraction members 23 are all located on the same layer, and there is no need to design an electrical connection structure to electrically connect the multiple electrode layers between the multiple electrode layers located on different layers as in the prior art, and it is only necessary to supply a DC voltage to the electrode layer 232 of each attraction member 23 by the voltage supply member 22 alone. Based on the above design, the technical solution of the embodiment of the present invention can reduce the processing difficulty and cost of the multi-wafer electrostatic pallet 2, make the processing of the multi-wafer electrostatic pallet 2 possible, improve the coupling efficiency of high frequency, and improve the etching rate, thereby improving the efficiency of the semiconductor process.

[0026] In the semiconductor process, the voltage supply member 22 can supply a DC voltage to the electrode layer 232 of each of the chucking members 23, and the electrode layer 232 of each of the chucking members 23 is polarized in one-to-one correspondence with the multiple wafers 6 to generate opposite positive and negative charges, and Coulomb forces are formed between the multiple chucking members 23 and the corresponding wafers 6, thereby enabling the multiple chucking members 23 to chucking the multiple wafers 6 in one-to-one correspondence, and furthermore, the electrostatic pallet 2 according to the embodiment of the present invention can chucking and mount the multiple wafers 6.

[0027] In the semiconductor process, high frequency waves are coupled to the electrode layers 232 of the multiple adsorption members 23 to attract plasma and impact the multiple wafers 6 adsorbed to the multiple adsorption members 23, thereby etching the multiple wafers 6.

[0028] Depending on the design of the electrostatic pallet 2 according to the embodiment of the present invention, the thickness of the insulating layer 231 may be optionally from 0.6 mm to 0.8 mm, which is thinner than the insulating layer of the multi-wafer electrostatic pallet in the prior art, which has a thickness of 1.5 mm to 2 mm, thereby reducing the loss of high frequency waves passing through the insulating layer 231, and further improving the coupling efficiency of high frequency waves and improving the efficiency of the semiconductor process.

[0029] In one preferred embodiment of the present invention, the thickness of the insulating layer 231 may be 0.67 mm.

[0030] Optionally, the thickness of the electrode layer 232 may be greater than or equal to 0.03 mm and less than or equal to 0.04 mm.

[0031] Optionally, the thickness of the dielectric layer 233 may be greater than or equal to 0.25 mm and less than or equal to 0.35 mm.

[0032] In one preferred embodiment of the present invention, the thickness of the electrode layer 232 may be 0.03 mm.

[0033] In one preferred embodiment of the present invention, the thickness of the dielectric layer 233 may be 0.3 mm.

[0034] In one preferred embodiment of the present invention, the material of the pallet body 21 may include metal. The reason for this design is that metal is a conductor, and high frequency waves must pass through the pallet body 21 to couple with the electrode layer 232 of the adsorption member 23, so that the strength of the electrostatic pallet structure is guaranteed, and the loss of high frequency waves passing through the pallet body 21 can be reduced or even avoided, thereby improving the coupling efficiency of high frequency waves and improving the efficiency of semiconductor processes.

[0035] Optionally, the material of the pallet body 21 may include aluminum.

[0036] In one preferred embodiment of the present invention, the material of the insulating layer 231 may include ceramic.

[0037] In one preferred embodiment of the present invention, the material of the dielectric layer 233 may include ceramic.

[0038] In one preferred embodiment of the present invention, the dielectric layer 233, the electrode layer 232 and the insulating layer 231 of the adsorption member 23 can be fabricated by sintering.

[0039] As shown in Figures 2, 3 to 5, in a preferred embodiment of the present invention, a through hole 234 may be provided in any of the insulating layers 231 of each attraction member 23, and the through hole 234 penetrates the insulating layer 231 to the electrode layer 232, and the voltage supply member 22 includes a lead structure 221, the lead structure 221 has a retraction end and a supply end, the retraction end is used to electrically connect to a DC power source (not shown), the number of supply ends is the same as the number of the attraction members 23, the supply ends are electrically connected to the electrode layer 232 through the through hole 234, and the supply end is used to supply the DC voltage retracted through the retraction end to the electrode layer 232.

[0040] That is, the lead structure 221 has the same number of supply ends as the number of the attracting members 23 and the lead ends are electrically connected to a DC power source to supply the DC voltage supplied from the DC power source to the lead structure 221. That is, the DC voltage supplied from the DC power source is supplied to the lead structure 221 via the lead ends. The supply ends penetrate the through holes 234 of the plurality of attracting members 23 in one-to-one correspondence, and the through holes 234 penetrate the insulating layer 231 of the attracting member 23 to the electrode layer 232, so that the supply ends penetrate the through holes 234 of the plurality of attracting members 23 in one-to-one correspondence and can be electrically connected to the electrode layers 232 of the plurality of attracting members 23 in one-to-one correspondence. The DC voltage supplied to the lead structure 221 can be supplied to the electrode layers 232 of the plurality of attracting members 23 in one-to-one correspondence via the supply ends.

[0041] As shown in Figures 6 to 7, in one preferred embodiment of the present invention, the lead structure 221 may include a lead-in line 2211, a plurality of supply lines 2212, and a ring-shaped line 2213 having an opening, one end of the lead-in line 2211 is electrically connected to the ring-shaped line 2213 and the other end is a lead-in end, and the plurality of supply lines 2212 are spaced apart along the circumferential direction of the ring-shaped line 2213, and each of the supply lines 2212 has one end electrically connected to the ring-shaped line 2213 and the other end is a supply end. Specifically, as shown in Figure 1, there are five suction members 23, one of which is located at the center of the pallet body 21, and the remaining four suction members 23 are symmetrically distributed around the suction member 23 located at the center along the circumferential direction of the pallet body 21. In this case, there are five supply lines 2212, one of which is located inside the annular line 2213 and electrically connected to the electrode layer 232 of the adsorption member 23 located at the center position, and the remaining four supply lines 2212 are all located outside the annular line 2213 and electrically connected in one-to-one correspondence to the electrode layers 232 of the remaining four adsorption members 23. Preferably, the lead-in line 2211 and the supply lines 2212 located inside the annular line 2213 extend in the same radial direction of the annular line 2213.

[0042] In the semiconductor process, the lead-in line 2211 is electrically connected to a DC power source as one end of the lead-in end, and a DC voltage supplied from the DC power source is supplied to the lead-in line 2211 via the lead-in end, and after passing through the lead-in line 2211, is supplied to the circular line 2213 via the end of the lead-in line 2211 electrically connected to the circular line 2213. After being supplied to the circular line 2213, the DC voltage flows along the circumferential direction of the circular line 2213, and is supplied to a plurality of supply lines 2212 provided at intervals along the circumferential direction of the circular line 2213 via the ends of the plurality of supply lines 2212 electrically connected to the circular line 2213 during the flow. After passing through the plurality of supply lines 2212, the DC voltage is supplied to the electrode layers 232 of the plurality of attraction members 23 in one-to-one correspondence via the ends serving as the supply ends of the plurality of supply lines 2212.

[0043] In such a design, the annular wire 2213 having openings is used to space multiple supply lines 2212 along the circumferential direction of the annular wire 2213, thereby making the lead structure 221 non-connected, i.e., making the lead structure 221 non-closed, thereby avoiding the DC voltage from generating a magnetic field in the lead structure 221, which would interfere with the DC voltage, thereby improving the stability of the electrostatic pallet 2 during use and improving the stability of the semiconductor process.

[0044] As shown in FIGS. 6 to 7, optionally, the end of the lead-in wire 2211 that is electrically connected to the loop line 2213 may be electrically connected to an end of the loop line 2213 that has an opening.

[0045] As shown in Figures 6 and 7, optionally, the end of one of the multiple supply lines 2212 that is electrically connected to the circular line 2213 may be electrically connected to the other end of the circular line 2213 having an opening.

[0046] As shown in Figures 2 and 3, in a preferred embodiment of the present invention, the voltage supply member 22 may further include an insulating sleeve 222 and a plurality of elastic conductive members 24, where the insulating sleeve 222 is fitted around the outside of the lead-in line 2211, the plurality of supply lines 2212, and the ring wire 2213, the plurality of elastic conductive members 24 are provided in one-to-one correspondence with the plurality of supply ends, and the plurality of elastic conductive members 24 are in elastic electrical contact with the electrode layers 232 of the plurality of adsorption members 23 in one-to-one correspondence.

[0047] In other words, the multiple supply ends are electrically connected in one-to-one correspondence to the electrode layers 232 of the multiple suction members 23 via the multiple elastic conductive members 24 arranged in one-to-one correspondence. In this way, the elasticity of the elastic conductive members 24 is utilized to always keep the elastic conductive members 24 and the electrode layer 232 in close electrical contact. As a result, the multiple supply ends are closely electrically connected in one-to-one correspondence to the electrode layers 232 of the multiple suction members 23, further improving the stability of the electrostatic pallet 2 when in use and improving the stability of the semiconductor process. Furthermore, by fitting an insulating sleeve 222 around the outside of the lead-in line 2211, the multiple supply lines 2212, and the ring line 2213, the lead-in line 2211, the multiple supply lines 2212, and the ring line 2213 are insulated from the pallet body 21, thereby preventing the high frequency coupled to the electrode layer 232 from interfering with the DC voltage passing through the lead-in line 2211, the multiple supply lines 2212, and the ring line 2213 when it passes through the pallet body 21, thereby improving the stability of use of the electrostatic pallet 2 and improving the stability of the semiconductor process.

[0048] Optionally, the multiple elastic conductive members 24 penetrate the through holes 234 of the multiple suction members 23 in one-to-one correspondence and electrically contact the electrode layers 232 of the multiple suction members 23 in one-to-one correspondence, while the supply end does not extend into the through holes 234 of the corresponding suction members 23.

[0049] Optionally, the elastic conductive member 24 may include an elastic probe.

[0050] As shown in Figures 6 to 7, optionally, the insulating sleeve 222 may include a retractable sleeve segment 2221, a plurality of supply sleeve segments 2222, and an annular sleeve segment 2223 having an opening, wherein the annular sleeve segment 2223 is fitted onto the outside of the annular line 2213, the retractable sleeve segment 2221 and the plurality of supply sleeve segments 2222 are spaced apart along the circumferential direction of the annular sleeve segment 2223, the retractable sleeve segment 2221 has one end connected to the annular sleeve segment 2223 and the other end closed, the retractable sleeve segment 2221 is fitted onto the outside of the retractable line 2211, each supply sleeve segment 2222 has one end connected to the annular sleeve segment 2223 and the other end closed, and the plurality of supply sleeve segments 2222 are fitted onto the outside of the plurality of supply lines 2212 in a one-to-one correspondence.

[0051] Optionally, the material of the insulating sleeve 222 may include ceramic.

[0052] As shown in Figures 1 to 8, in one preferred embodiment of the present invention, the pallet body 21 may be provided with a first groove 211 and a retraction passage, the shape of the first groove 211 is adapted to the shape of the voltage supply member 22, the voltage supply member 22 is fitted into the first groove 211, and the retraction passage communicates with the first groove 211, penetrates the pallet body 21, and is used to electrically connect the retraction end to a DC power source.

[0053] By fitting the voltage supply member 22 into the first groove 211, the position of the voltage supply member 22 on the pallet body 21 can be determined using the first groove 211, and the voltage supply member 22 can be prevented from moving on the pallet body 21, thereby improving the stability of use of the electrostatic pallet 2 and improving the stability of the semiconductor process.

[0054] As shown in FIG. 8 , optionally, the first groove 211 may include an inlet groove segment 2111, a plurality of supply groove segments 2112, and an annular groove segment 2113 having an opening, the annular sleeve segment 2223 and the annular line 2213 are fitted into the inlet groove segment 2111, the inlet groove segment 2111 and the plurality of supply groove segments 2112 are spaced apart along the circumferential direction of the annular groove segment 2113, and the inlet groove segment 2111 has one end communicating with the annular groove segment 2113. , and the other end is closed, the inlet sleeve segment 2221 and the inlet line 2211 are fitted into the inlet groove segment 2111, and each supply groove segment 2112 has one end connected to the annular groove segment 2113 and the other end closed, and the multiple supply sleeve segments 2222 and the multiple supply lines 2212 are fitted into the multiple supply groove segments 2112 in a one-to-one relationship, and the inlet passage communicates with the inlet groove segment 2111, penetrates the pallet body 21, and is used to electrically connect the inlet end to a DC power source.

[0055] 8, in a preferred embodiment of the present invention, the pallet body 21 may be provided with a plurality of second grooves 212 spaced apart from each other, the plurality of second grooves 212 communicate with the portions of the first grooves 211 into which the supply ends are fitted, the shape of each second groove 212 is adapted to the shape of each suction member 23, and the plurality of suction members 23 are provided in one-to-one correspondence with the plurality of second grooves 212. In this manner, each supply groove segment 2112 of the first groove 211 extends to the corresponding second grooves 212, that is, the portion of the first groove 211 extending to the corresponding second grooves 212 is a groove segment opened at the groove bottom of the second groove 212, so that the supply sleeve segment 2222 and the supply line 2212 extend to the bottom of the suction member 23 located in the second groove 212 and are electrically connected to the electrode layer 232 through the through hole 234. Preferably, the end of each supply groove segment 2112 of the first groove 211 extending to the corresponding second groove 212 is located at the center of the second groove 212. Furthermore, by providing a plurality of suction members 23 in one-to-one correspondence with the plurality of second grooves 212, the positions of the plurality of suction members 23 on the pallet body 21 can be specified by using the plurality of second grooves 212, and the suction members 23 can be prevented from moving on the pallet body 21, thereby improving the use stability of the electrostatic pallet 2 and improving the stability of the semiconductor process.

[0056] As shown in Figures 1 to 8, optionally, a plurality of second grooves 212 are provided at equal intervals on the pallet body 21, making it possible to provide a plurality of suction members 23 at equal intervals on the pallet body 21.

[0057] In one preferred embodiment of the present invention, each suction member 23 can be glued to the second groove 212. That is, each suction member 23 can be connected to the pallet body 21 by adhesion.

[0058] As shown in FIG. 9, an embodiment of the present invention includes a chuck 3 and an electrostatic pallet 2 according to an embodiment of the present invention, and the electrostatic pallet 2 is mounted on the chuck 3 and further provides a base used to adsorb a plurality of wafers 6.

[0059] The base of the embodiment of the present invention is provided with an electrostatic pallet 2 of the embodiment of the present invention on a chuck 3, and uses the electrostatic pallet 2 of the embodiment of the present invention to adsorb multiple wafers 6, thereby reducing the difficulty and cost of processing the multi-wafer electrostatic pallet 2, improving the coupling efficiency of high frequency waves, and improving the efficiency of the semiconductor process.

[0060] As shown in FIG. 9 , in one preferred embodiment of the present invention, the base further includes a power supply assembly 4 and a radio frequency supply assembly 5, in which the power supply assembly 4 is electrically connected to the voltage supply member 22, the power supply assembly 4 is electrically connected to a DC power source and is used to supply a DC voltage supplied from the DC power source to the voltage supply member 22, and the radio frequency supply assembly 5 is electrically connected to the chuck 3 and is used to supply a radio frequency to the electrostatic pallet 2 via the chuck 3.

[0061] 9, optionally, the power supply assembly 4 may include a supply lead 41 and a filter 42, and the high frequency supply assembly 5 may include a high frequency supply lead 51 and a matcher 52, the matcher 52 is used for electrically connecting to a high frequency source (not shown), the high frequency supply lead 51 is electrically connected to the matcher 52 and the chuck 3, the filter 42 is used for electrically connecting to a DC power source (not shown), and the supply lead 41 passes through the chuck 3 and is electrically connected to the filter 42 and the lead-in wire 2211. In the semiconductor process, the high frequency source supplies high frequency, and the high frequency supplied from the high frequency source is supplied to the chuck 3 via the matcher 52, and is coupled to the electrode layer 232 of the suction member 23 via the chuck 3, the pallet body 21, and the insulating layer 231 of the suction member 23 in order. The DC power supply supplies a DC voltage, which is supplied to the electrode layer 232 of the attraction member 23 via the filter 42, the supply lead 41, the lead-in wire 2211, the loop wire 2213, the supply wire 2212 and the elastic conductive member 24 in this order.

[0062] 9, a cooling passage 31 (Chiller) for flowing a cooling liquid is optionally provided in the chuck 3. This allows the electrostatic pallet 2 to be cooled by the cooling liquid.

[0063] 9, optionally, a seal ring 32 may be provided between the electrostatic pallet 2 and the chuck 3, and an inert gas may be introduced therein. In this manner, the gap between the electrostatic pallet 2 and the chuck 3 can be sealed using the seal ring 32 and the inert gas.

[0064] The inert gas may include helium gas.

[0065] In summary, the electrostatic pallet 2 and base according to the embodiment of the present invention can reduce the processing difficulty and cost of the multi-wafer electrostatic pallet 2, improve the coupling efficiency of high frequency waves, and improve the efficiency of semiconductor processing.

[0066] It should be noted that the above embodiments are merely illustrative embodiments adopted to explain the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An electrostatic pallet for attracting a plurality of wafers, comprising: The pallet includes a pallet body, a voltage supply member, and a plurality of suction members, the pallet body, the voltage supply member, and the plurality of suction members are each configured as a member independent of one another, The plurality of suction members are placed on the pallet body at intervals, and each of the suction members includes an insulating layer, an electrode layer, and a dielectric layer that are provided in this order along a direction away from the pallet body, and the electrode layers of the plurality of suction members are all in the same layer; an electrostatic pallet comprising: a first attracting member and a second attracting member, the first attracting member being electrically connected to the electrode layers of the first attracting members; and a second attracting member being electrically connected to the electrode layers of the first attracting members, the ...

2. 2. The electrostatic pallet according to claim 1, further comprising a positioning member, the positioning member being provided on the pallet body, the positioning member having a plurality of positioning through holes provided at intervals, and the plurality of suction members being provided in one-to-one correspondence with the plurality of positioning through holes.

3. 2. The electrostatic pallet according to claim 1, wherein a through hole is provided in each of the insulating layers of each of the attraction members, the through hole penetrating the insulating layer to the electrode layer, the voltage supply member includes a lead structure, the lead structure having a retraction end and a supply end, the retraction end is used for electrically connecting to a DC power source, the number of the supply ends is the same as the number of the attraction members, and the supply ends are electrically connected to the electrode layer through the through hole.

4. the lead structure includes a lead-in wire, a plurality of supply wires, and an annular wire having an opening; 4. The electrostatic pallet of claim 3, wherein the lead-in line has one end electrically connected to the annular line and the other end serving as the lead-in end, and a plurality of supply lines are arranged at intervals along a circumferential direction of the annular line, and each of the supply lines has one end electrically connected to the annular line and the other end serving as the supply end.

5. the voltage supply member further includes an insulating sleeve and a plurality of elastic conductive members; 5. The electrostatic pallet according to claim 4, wherein the insulating sleeve is fitted over the outside of the lead-in line, the plurality of supply lines, and the annular line, the plurality of elastic conductive members are provided in one-to-one correspondence with the plurality of supply ends, and the plurality of elastic conductive members are in elastic electrical contact with the electrode layers of the plurality of suction members in one-to-one correspondence.

6. 4. The electrostatic pallet according to claim 3, wherein the pallet body is provided with a first groove and a lead-in passage, the shape of the first groove is consistent with the shape of the voltage supply member, the voltage supply member is fitted into the first groove, the lead-in passage communicates with the first groove and penetrates the pallet body, and the lead-in end is used for electrically connecting to the DC power source.

7. 7. The electrostatic pallet according to claim 6, wherein the pallet body is provided with a plurality of second grooves spaced apart from one another, the second grooves are connected to portions of the first grooves into which the supply ends are fitted, the shape of each of the second grooves conforms to the shape of each of the suction members, and the suction members are provided in one-to-one correspondence with the second grooves.

8. 8. The electrostatic pallet of claim 7, wherein each of the attraction members is adhered to the second groove.

9. 2. The electrostatic pallet of claim 1, wherein the insulating layer has a thickness of 0.6 mm or more and 0.8 mm or less, the electrode layer has a thickness of 0.03 mm or more and 0.04 mm or less, and the dielectric layer has a thickness of 0.25 mm or more and 0.35 mm or less.

10. 2. The electrostatic pallet according to claim 1, wherein the material of the insulating layer includes ceramic, and the material of the pallet body includes metal.

11. A chuck and an electrostatic pallet according to any one of claims 1 to 10, A base, characterized in that the electrostatic pallet is provided on the chuck and is used to attract a plurality of the wafers.

12. further comprising a power supply assembly and a radio frequency supply assembly; 12. The base of claim 11, wherein the power supply assembly is electrically connected to the voltage supply member, the power supply assembly is electrically connected to a DC power source and is used to supply a DC voltage provided from the DC power source to the voltage supply member, and the high frequency supply assembly is electrically connected to the chuck and is used to supply high frequency to the electrostatic pallet by the chuck.

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