Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device suitable for suppressing the influence of shrinkage of a resin material portion, and a method for manufacturing the semiconductor device.SOLUTION: A method for manufacturing a semiconductor device includes steps of forming first and second insulating layers 31 and 33. In the step of forming the first insulating layer 31, a first annular portion 310 is formed so as to be arranged across a peripheral portion 211 and a main surface of a first electrode 21, and the step of forming the second insulating layer 33 includes a step of arranging a second annular portion 330 which has an annular shape overlapping the first annular portion 310, and is made of a resin material, and a step of heating the second annular portion 330. A distance D1 in a direction y between an outer end boundary line 311 of the first annular portion 310 and an outer end boundary line 331 of the second annular portion 330 is greater at an end portion closer to an outer end boundary line 332 than at the center in an x direction. A distance D2 in the x direction between an outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 is greater at the end portion closer to the outer end boundary line 331 than at the center in the y direction.SELECTED DRAWING: Figure 17

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. In the semiconductor device disclosed in this document, the periphery of an electrode formed on the surface of a semiconductor element is covered with an insulating film (passivation film 5 and polyimide film 11). The part of the electrode on the semiconductor element that is located inside the insulating film and exposed from the insulating film is defined as an electrode pad part.

[0003] In the manufacture of a semiconductor device, when a portion made of a resin material such as polyimide is formed, the resin material shrinks, which may affect the surroundings. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2005-72253 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure has been devised in light of the above-mentioned circumstances, and has as its main objective the provision of a semiconductor device suitable for suppressing the effects of shrinkage of the resin material portion, and a method for manufacturing the semiconductor device. [Means for solving the problem]

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having an element body having an element main surface facing one side in a thickness direction, and a first electrode disposed on the first element main surface, a first insulating layer disposed across a peripheral portion of the first electrode and the element main surface and having a first annular portion that is annular when viewed in the thickness direction, and a second insulating layer laminated on the first insulating layer, made of a resin material, and having a second annular portion that overlaps with the first annular portion when viewed in the thickness direction, wherein the first annular portion has a first outer end boundary line extending in a first direction perpendicular to the thickness direction, and a second outer end boundary line connected to the first outer end boundary line. and a second outer end boundary line extending in a second direction perpendicular to both the thickness direction and the first direction, and the second annular portion has, when viewed in the thickness direction, a third outer end boundary line positioned outside the first outer end boundary line in the second direction and a fourth outer end boundary line positioned outside the second outer end boundary line in the first direction, and an end of the third outer end boundary line closer to the fourth outer end boundary line than a center in the first direction protrudes outward in the second direction, and an end of the fourth outer end boundary line closer to the third outer end boundary line than a center in the second direction protrudes outward in the first direction.

[0007] A method for manufacturing a semiconductor device provided by a second aspect of the present disclosure includes the steps of: preparing a substrate having a semiconductor layer having a main surface facing one side in a thickness direction and a first electrode disposed on the main surface; forming a first insulating layer on the main surface side of the substrate; and forming a second insulating layer on the main surface side of the substrate, wherein the step of forming the first insulating layer includes forming a first annular portion that is disposed across a peripheral portion of the first electrode and the main surface and has a ring shape when viewed in the thickness direction; and the step of forming the second insulating layer includes the steps of arranging a second annular portion that is annular and overlaps with the first annular portion when viewed in the thickness direction and is made of a resin material; and heating the second annular portion, wherein the first annular portion extends in a first direction perpendicular to the thickness direction. the second annular portion has a first outer end boundary line extending from the first outer end boundary line and a second outer end boundary line connected to the first outer end boundary line and extending in a second direction perpendicular to both the thickness direction and the first direction, the second annular portion has a third outer end boundary line positioned outside the first outer end boundary line in the second direction and a fourth outer end boundary line positioned outside the second outer end boundary line in the first direction, a first distance which is the distance in the second direction between the first outer end boundary line and the third outer end boundary line is larger at an end portion closer to the fourth outer end boundary line than a center in the first direction, and a second distance which is the distance in the first direction between the second outer end boundary line and the fourth outer end boundary line is larger at an end portion closer to the third outer end boundary line than a center in the second direction. Effect of the Invention

[0008] According to the present disclosure, it is possible to suppress the influence of shrinkage of the second annular portion which is made of resin material.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2]FIG. 2 is a bottom view of the semiconductor device shown in FIG. [Diagram 3] FIG. 3 is a plan view (through the sealing resin) of the semiconductor device shown in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a plan view of the semiconductor element. [Figure 8] FIG. 8 is an enlarged cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is an enlarged view of part A in FIG. [Figure 10] FIG. 10 is an enlarged view of part B in FIG. [Figure 11] FIG. 11 is a plan view showing a step of the example of the method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. [Figure 12] FIG. 12 is an enlarged cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a plan view showing a step subsequent to that shown in FIG. [Figure 14] FIG. 14 is an enlarged cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is a plan view showing a step subsequent to that shown in FIG. [Figure 16] FIG. 16 is an enlarged cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is an enlarged view of part A in FIG. [Figure 18] FIG. 18 is an enlarged view of part B in FIG. [Figure 19] FIG. 19 is a plan view showing a step subsequent to that shown in FIG. [Figure 20] FIG. 20 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 21] FIG. 21 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 22] FIG. 22 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Diagram 23] FIG. 23 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 24] FIG. 24 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Diagram 25] FIG. 25 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 26] FIG. 26 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 27] FIG. 27 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 28] FIG. 28 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Figure 29] FIG. 29 is a partially enlarged cross-sectional view showing a step subsequent to that shown in FIG. [Diagram 30] FIG. 30 is a plan view showing a process of a method for manufacturing a semiconductor device according to a first modification of the first embodiment. [Diagram 31] FIG. 31 is an enlarged view of part A in FIG. [Diagram 32] FIG. 32 is an enlarged view of part B in FIG. [Diagram 33] FIG. 33 is a plan view showing a step of a method for manufacturing a semiconductor device according to a second modification of the first embodiment, and is a partially enlarged view similar to FIG. [Diagram 34] FIG. 34 is a plan view showing a step of a method for manufacturing a semiconductor device according to a second modification of the first embodiment, and is a partially enlarged view similar to FIG. [Diagram 35] FIG. 35 is a plan view showing a semiconductor element in a semiconductor device according to a third modification of the first embodiment. [Diagram 36] FIG. 36 is an enlarged view of part A in FIG. [Figure 37] FIG. 37 is an enlarged view of part B in FIG. [Figure 38] FIG. 38 is a plan view showing a process of a method for manufacturing a semiconductor device according to the third modification of the first embodiment. [Figure 39]FIG. 39 is an enlarged view of part A in FIG. [Diagram 40] FIG. 40 is an enlarged view of part B in FIG. [Diagram 41] FIG. 41 is a plan view showing a step following that in FIG. [Diagram 42] FIG. 42 is an enlarged view of part A in FIG. [Diagram 43] FIG. 43 is an enlarged view of part B in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0012] The terms "first," "second," "third," etc. in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0013] In this disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B in contact with a certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B". In addition, unless otherwise specified, "an object A overlaps with an object B when viewed in a certain direction" includes "an object A overlaps with the entirety of an object B" and "an object A overlaps with a part of an object B."

[0014] First Embodiment 1 to 10, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first lead 1A, a second lead 1B, a third lead 1C, a semiconductor element 2, an insulating portion 3, a metal laminate portion 4, a conductive member 5, a first conductive bonding material 61, a second conductive bonding material 62, a third conductive bonding material 63, and a sealing resin 7.

[0015] FIG. 1 is a plan view showing the semiconductor device A10. FIG. 2 is a bottom view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line VV in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a plan view showing a semiconductor element. FIG. 8 is an enlarged cross-sectional view taken along line VIII-VIII in FIG. 7. FIG. 9 is an enlarged view of part A in FIG. 8. FIG. 10 is an enlarged view of part B in FIG. 8. For ease of understanding, FIG. 3 is seen through the sealing resin 7. In FIG. 7, the metal laminated portion 4 is seen through.

[0016] In the description of the semiconductor device A10, the thickness direction of the semiconductor element 2 is called the "thickness direction z". The direction perpendicular to the thickness direction z is called the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is called the "second direction y". As shown in FIG. 1 and FIG. 2, the semiconductor device A10 is substantially rectangular when viewed in the thickness direction z. Also, in the description of the semiconductor device A10, for convenience, the right side in FIG. 1 is called "one side of the first direction x" and the left side in FIG. 1 is called "the other side of the first direction x". In FIG. 1, the upper side is called "one side of the second direction y" and the lower side is called "the other side of the second direction y". In FIG. 4, the upper side is called "one side of the thickness direction z" and the lower side is called "the other side of the thickness direction z". The size of the semiconductor device A10 is not particularly limited, and in this embodiment, for example, the dimension in the first direction x is 2.6 mm to 3.6 mm, the dimension in the second direction y is 2.6 mm to 3.6 mm, and the dimension in the thickness direction z is 0.5 mm to 1.0 mm.

[0017] The first lead 1A, the second lead 1B, and the third lead 1C are formed, for example, by punching or bending a metal plate. The first lead 1A, the second lead 1B, and the third lead 1C are made of, for example, copper (Cu) or nickel (Ni), or an alloy thereof. The first lead 1A, the second lead 1B, and the third lead 1C have a thickness of, for example, 0.1 mm to 0.3 mm.

[0018] As shown in Fig. 3, the first lead 1A is arranged to be spaced apart from the second lead 1B and the third lead 1C in the second direction y. The second lead 1B and the third lead 1C are aligned in the first direction x. The first lead 1A, the second lead 1B and the third lead 1C are arranged to be spaced apart from each other when viewed in the thickness direction z. The size when viewed in the thickness direction z is the largest for the first lead 1A and the smallest for the third lead 1C.

[0019] As shown in FIGS. 3 to 6, the first lead 1A has an element bonding portion 11 and a plurality of (four in this embodiment) terminal-like extending portions 12. The element bonding portion 11 is, for example, rectangular when viewed in the thickness direction z. The element bonding portion 11 has an element mounting surface 111 and a back surface mounting portion 112. The element mounting surface 111 faces one side in the thickness direction z, and the back surface mounting portion 112 faces the opposite side (the other side in the thickness direction z) to the element mounting surface 111. A semiconductor element 2 is mounted on the element mounting surface 111. As shown in FIGS. 2 and 4, the back surface mounting portion 112 is exposed from the sealing resin 7. The back surface mounting portion 112 is a portion to be joined by a joining material such as solder when mounting the semiconductor device A10 on a circuit board (not shown).

[0020] As shown in FIG. 3 and FIG. 4, the second lead 1B has a bonding portion 13, a plurality of (three in this embodiment) terminal portions 14, and a plurality of (three in this embodiment) bent portions 15. The bonding portion 13 is located on one side of the thickness direction z (upper side in FIG. 4) with respect to the plurality of terminal portions 14. The bonding portion 13 is located inward in the second direction y with respect to the plurality of terminal portions 14. Each of the plurality of terminal portions 14 has a back surface mounting portion 141. The back surface mounting portion 141 faces the other side of the thickness direction z (lower side in FIG. 4). The back surface mounting portion 141 is exposed from the sealing resin 7. The back surface mounting portion 141 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The plurality of bent portions 15 connect the bonding portion 13 and the plurality of terminal portions 14 separately, and are bent when viewed in the first direction x.

[0021] As shown in FIG. 3 and FIG. 5, the third lead 1C has a wire bonding portion 16, a terminal portion 17, and a bent portion 18. The wire bonding portion 16 is located on one side of the terminal portion 17 in the thickness direction z (upper side in FIG. 5). The wire bonding portion 16 is located inward in the second direction y with respect to the terminal portion 17. The terminal portion 17 has a back surface mounting portion 171. The back surface mounting portion 171 faces the other side of the thickness direction z (lower side in FIG. 5). The back surface mounting portion 171 is exposed from the sealing resin 7. The back surface mounting portion 171 is a portion that is bonded by a bonding material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The bent portion 18 connects the wire bonding portion 16 and the terminal portion 17, and has a bent shape when viewed in the first direction x.

[0022] The semiconductor element 2 is an element that exerts the electrical function of the semiconductor device A10. The type of the semiconductor element 2 is not particularly limited, and in this embodiment, the semiconductor element 2 is configured as a transistor. As shown in Figures 3 to 5, the semiconductor element 2 has an element body 20, a first electrode 21, a second electrode 22, and a third electrode 23.

[0023] The element body 20 has a rectangular shape when viewed in the thickness direction z. The element body 20 has an element main surface 201 and an element back surface 202. The element main surface 201 and the element back surface 202 face opposite each other in the thickness direction z. The element main surface 201 faces the same side as the element mounting surface 111 of the element bonding portion 11 in the thickness direction z. Therefore, the element back surface 202 faces the element mounting surface 111.

[0024] The first electrode 21 and the third electrode 23 are disposed on a main surface 201 of the element. The second electrode 22 is disposed on a rear surface 202 of the element. The first electrode 21, the second electrode 22, and the third electrode 23 are made of a material such as copper or aluminum (Al), or an alloy thereof. In this embodiment, the first electrode 21 is a source electrode, the second electrode 22 is a drain electrode, and the third electrode 23 is a gate electrode.

[0025] In this embodiment, the first electrode 21 covers most of the element principal surface 201. Specifically, the first electrode 21 is disposed in a region of the rectangular element principal surface 201 excluding the periphery and one corner (the lower right corner in FIG. 3). The first electrode 21 has a first electrode pad portion 212. The first electrode pad portion 212 is located inside the insulating portion 3 as viewed in the thickness direction z. The third electrode 23 is disposed in one corner of the element principal surface 201 (the lower right corner in FIG. 3). The second electrode 22 covers substantially the entire element back surface 202.

[0026] The second electrode 22 is electrically joined to the element mounting surface 111 (element bonding portion 11) via a second conductive bonding material 62. The second conductive bonding material 62 electrically connects the element bonding portion 11 and the second electrode 22. The second conductive bonding material 62 is, for example, solder.

[0027] The semiconductor device A10 includes a wire 65. The wire 65 is electrically connected to the third electrode 23 and the wire bonding portion 16 of the third lead 1C. The wire 65 electrically connects the third electrode 23 and the third lead 1C.

[0028] 7 and 8, the insulating portion 3 is disposed across the first electrode 21 and the element principal surface 201. The insulating portion 3 has an annular shape overlapping with the outer peripheral edge of the first electrode 21 as viewed in the thickness direction z. The outer edge 301 of the insulating portion 3 is located near the outer peripheral edge of the element principal surface 201 as viewed in the thickness direction z. In the first electrode 21, a region located inside the inner edge 302 of the insulating portion 3 as viewed in the thickness direction z is defined as a first electrode pad portion 212.

[0029] In this embodiment, the insulating section 3 is made of a first insulating layer 31 and a second insulating layer 33. In this embodiment, the first insulating layer 31 is disposed across the peripheral portion 211 of the first electrode 21 and the element main surface 201. In FIG. 7, the formation region of the first insulating layer 31 is shaded. The first insulating layer 31 is made of, for example, a nitride, for example, SiN. The thickness of the first insulating layer 31 is, for example, 0.1 μm to 2 μm. Note that other insulating materials, such as SiON and SiO2, may be adopted as the constituent material of the first insulating layer 31.

[0030] The first insulating layer 31 includes a first annular portion 310. The first annular portion 310 has an annular shape corresponding to the outer periphery of the first electrode 21. In this embodiment, the first annular portion 310 is composed of a plurality of strip-shaped portions each extending with a substantially constant width in the first direction x or the second direction y. In this embodiment, the first annular portion 310 has outer end boundary lines 311, 312, 313, 314, 315, and 316 and inner end boundary lines 321, 322, 323, 324, 325, and 326. Each of the outer end boundary lines 311, 312, 313, 314, 315, and 316 is a part of the contour line of the outer periphery of the first annular portion 310 when viewed in the thickness direction z. Each of the inner end boundary lines 321, 322, 323, 324, 325, and 326 is a part of the contour line of the inner circumference of the first annular portion 310 when viewed in the thickness direction z.

[0031] 7, only the first annular portion 310 corresponding to the first electrode 21 is shown as the first insulating layer 31, but the first insulating layer 31 is not limited to this. The first insulating layer 31 may include another annular portion having an annular shape corresponding to the outer periphery of the third electrode 23, for example.

[0032] The outer end boundary line 311 is located on one side of the first annular portion 310 in the second direction y and extends in the first direction x. The outer end boundary line 312 is located on one side of the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the outer end boundary line 312 in the second direction y is connected to one side end of the outer end boundary line 311 in the first direction x. The outer end boundary line 313 is located on the other side of the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the outer end boundary line 313 in the second direction y is connected to the other side end of the outer end boundary line 311 in the first direction x. The outer end boundary line 314 is located on the other side of the second direction y in the first annular portion 310 and extends in the first direction x. The other side end of the outer end boundary line 314 in the first direction x is connected to the other side end of the outer end boundary line 313 in the second direction y. The outer edge boundary lines 311 and 314 correspond to a "first outer edge boundary line" in this disclosure. The outer edge boundary lines 312 and 313 correspond to a "second outer edge boundary line" in this disclosure.

[0033] In this disclosure, "the outer boundary 311 (314) extends in the first direction x" means that the outer boundary 311 (314) extends in the first direction x as a whole. Therefore, as long as most of the outer boundary 311 (314) extends along the first direction x, the outer boundary 311 (314) may include a portion that extends in a direction different from the first direction x1. In this disclosure, "the outer boundary 312 (313) extends in the second direction y" means that the outer boundary 312 (313) extends in the second direction y as a whole. Therefore, as long as most of the outer boundary 312 (313) extends along the second direction y, the outer boundary 312 (313) may include a portion that extends in a direction different from the second direction y.

[0034] The inner end boundary line 321 is located on one side of the first annular portion 310 in the second direction y and extends in the second direction y. The inner end boundary line 321 corresponds to the outer end boundary line 311 and is located inside the outer end boundary line 311 in the second direction y as viewed in the thickness direction z. The inner end boundary line 322 is located on one side of the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the inner end boundary line 322 in the second direction y is connected to one side end of the inner end boundary line 321 in the first direction x. The inner end boundary line 322 corresponds to the outer end boundary line 312 and is located inside the outer end boundary line 312 in the first direction x as viewed in the thickness direction z. The inner end boundary line 323 is located on the other side of the first direction x in the first direction x in the first annular portion 310 and extends in the second direction y. One end of the inner end boundary line 323 in the second direction y is connected to the other end of the inner end boundary line 321 in the first direction x. The inner end boundary line 323 corresponds to the outer end boundary line 313, and is located inside the outer end boundary line 313 in the first direction x as viewed in the thickness direction z. The inner end boundary line 324 is located on the other side of the first annular portion 310 in the second direction y and extends in the first direction x. The other end of the inner end boundary line 324 in the first direction x is connected to the other end of the inner end boundary line 323 in the second direction y. The inner end boundary line 324 corresponds to the outer end boundary line 314, and is located inside the outer end boundary line 314 in the second direction y as viewed in the thickness direction z. The inner end boundary line 321 and the inner end boundary line 324 correspond to the "first inner end boundary line" in this disclosure. The inner end boundary line 322 and the inner end boundary line 323 correspond to the "second inner end boundary line" in this disclosure.

[0035] In the present disclosure, "the inner end boundary line 321 (324) extends in the first direction x" means that the inner end boundary line 321 (324) extends as a whole in the first direction x. Therefore, as long as the majority of the inner end boundary line 321 (324) extends along the first direction x, the inner end boundary line 321 (324) may include a portion that extends in a direction different from the first direction x1. In the present disclosure, "the inner end boundary line 322 (323) extends in the second direction y" means that the inner end boundary line 322 (323) extends as a whole in the second direction y. Therefore, as long as the majority of the inner end boundary line 322 (323) extends along the second direction y, the inner end boundary line 322 (323) may include a portion that extends in a direction different from the second direction y.

[0036] The inner end boundary line 325 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One end of the inner end boundary line 325 in the first direction x is connected to the other end of the inner end boundary line 322 in the second direction y. The inner end boundary line 325 is located inside the inner end boundary line 322 in the first direction x as viewed in the thickness direction z. The inner end boundary line 326 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other end of the inner end boundary line 326 in the second direction y is connected to the other end of the inner end boundary line 325 in the first direction x. The inner end boundary line 326 is located on the opposite side of the inner end boundary line 321 from the inner end boundary line 325 in the second direction y as viewed in the thickness direction z. In this embodiment, the inner end boundary line 326 is also connected to the inner end boundary line 324. The inner end boundary line 325 corresponds to the "fifth inner end boundary line" in this disclosure. The inner end boundary line 326 corresponds to the "sixth inner end boundary line" in this disclosure. In this disclosure, "the inner end boundary line 325 extends in the first direction x" means that the inner end boundary line 325 extends in the first direction x as a whole. Therefore, as long as most of the inner end boundary line 325 extends along the first direction x, the inner end boundary line 325 may include a portion that extends in a direction different from the first direction x1. In this disclosure, "the inner end boundary line 326 extends in the second direction y" means that the inner end boundary line 326 extends in the second direction y as a whole. Therefore, as long as most of the inner end boundary line 326 extends along the second direction y, the inner end boundary line 326 may include a portion that extends in a direction different from the second direction y.

[0037] The outer end boundary line 315 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One side end of the outer end boundary line 315 in the first direction x is connected to the other side end of the outer end boundary line 312 in the second direction y. The outer end boundary line 315 corresponds to the inner end boundary line 325, and is located outside the inner end boundary line 325 in the second direction y as viewed in the thickness direction z. The outer end boundary line 316 is located in the first annular portion 310 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other side end of the outer end boundary line 316 in the second direction y is connected to the other side end of the outer end boundary line 315 in the first direction x. The outer end boundary line 316 corresponds to the inner end boundary line 326, and is located outside the inner end boundary line 326 in the first direction x as viewed in the thickness direction z. In this embodiment, the outer boundary line 316 is also connected to the outer boundary line 314. The outer boundary line 315 corresponds to the "fifth outer boundary line" in this disclosure. The outer boundary line 316 corresponds to the "sixth outer boundary line" in this disclosure. In this disclosure, "the outer boundary line 315 extends in the first direction x" means that the outer boundary line 315 extends in the first direction x as a whole. Therefore, as long as most of the outer boundary line 315 extends along the first direction x, the outer boundary line 315 may include a portion that extends in a direction different from the first direction x1. In this disclosure, "the outer boundary line 316 extends in the second direction y" means that the outer boundary line 316 extends in the second direction y as a whole. Therefore, as long as most of the outer boundary line 316 extends along the second direction y, the outer boundary line 316 may include a portion that extends in a direction different from the second direction y.

[0038] 7 and 8, the second insulating layer 33 is laminated on the first insulating layer 31. In this embodiment, the second insulating layer 33 covers the entire first insulating layer 31, and each of the first electrode 21 and the element main surface 201. In this embodiment, the second insulating layer 33 shown in FIG. 8 includes an outer edge 301 and an inner edge 302 of the insulating portion 3.

[0039] The constituent material of the second insulating layer 33 is not particularly limited, and in this embodiment, the second insulating layer 33 is made of, for example, a resin material, such as a polyimide resin. The thickness of the second insulating layer 33 is greater than the thickness of the first insulating layer 31. The thickness of the second insulating layer 33 is preferably 5 to 50 times the thickness of the first insulating layer 31. The thickness of the second insulating layer 33 is, for example, 5 μm to 10 μm.

[0040] As shown in FIG. 7, the second insulating layer 33 includes a second annular portion 330. The second annular portion 330 has an annular shape corresponding to the first annular portion 310, and covers the entire first annular portion 310. In this embodiment, the second annular portion 330 is composed of a plurality of strip-shaped portions each extending approximately in the first direction x or the second direction y. In this embodiment, the second annular portion 330 has outer end boundary lines 331, 332, 333, 334, 335, and 336 and inner end boundary lines 341, 342, 343, 344, 345, and 346. Each of the outer end boundary lines 331, 332, 333, 334, 335, and 336 is a part of the contour line of the outer periphery of the second annular portion 330 when viewed in the thickness direction z. Each of the inner end boundary lines 341, 342, 343, 344, 345, and 346 is a part of the contour line of the inner circumference of the second annular portion 330 when viewed in the thickness direction z.

[0041] 7, only the second annular portion 330 corresponding to the first annular portion 310 (first electrode 21) is shown as the second insulating layer 33, but the present invention is not limited thereto. The second insulating layer 33 may include another annular portion having an annular shape corresponding to the outer periphery of the third electrode 23, for example.

[0042] The outer end boundary line 331 is located on one side in the second direction y of the second annular portion 330, and extends in the first direction x. The outer end boundary line 331 is located outside the outer end boundary line 311 in the second direction y when viewed in the thickness direction z.

[0043] The outer end boundary line 332 is located on one side of the second annular portion 330 in the first direction x, and extends in the second direction y. One end of the outer end boundary line 332 in the second direction y is connected to one end of the outer end boundary line 331 in the first direction x. The outer end boundary line 332 is located outside the outer end boundary line 312 in the first direction x when viewed in the thickness direction z.

[0044] As shown in FIG. 9, in this embodiment, the outer boundary 331 includes an outer boundary first part 331A and an outer boundary protruding part 331E. The outer boundary first part 331A extends linearly along the first direction x, and occupies most of the outer boundary 331 except for the end part. The outer boundary protruding part 331E is connected to the outer boundary first part 331A, and is located at the end part closer to the outer boundary 332. The outer boundary protruding part 331E is located outside the outer boundary first part 331A in the second direction y. Therefore, the outer boundary 331 has an end part (outer boundary protruding part 331E) closer to the outer boundary 332 than the center (outer boundary first part 331A) in the first direction x, which protrudes outward in the second direction y.

[0045] The outer boundary 332 includes an outer boundary first part 332A and an outer boundary protrusion part 332E. The outer boundary first part 332A extends linearly along the second direction y and occupies most of the outer boundary 332 except for the end part. The outer boundary protrusion part 332E is connected to the outer boundary first part 332A and is located at the end part closer to the outer boundary 331. The outer boundary protrusion part 332E is located outside the outer boundary first part 332A in the first direction x. Therefore, the outer boundary 332 has an end part (outer boundary protrusion part 332E) closer to the outer boundary 331 than the center (outer boundary first part 332A) in the second direction y, which protrudes outward in the first direction x. The outer boundary protrusion part 332E is also connected to the outer boundary protrusion part 331E. 9, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between the outer edge boundary line overhang 331E and the outer edge boundary line overhang 332E. As a result, the corners of the outer edge boundary line 331 and the outer edge boundary line 332 (the outer edge boundary line overhang 331E and the outer edge boundary line overhang 332E) have a shape that overhangs outward in both the first direction x and the second direction y.

[0046] 7, the outer end boundary line 333 is located on the other side of the second annular portion 330 in the first direction x, and extends in the second direction y. One end of the outer end boundary line 313 in the second direction y is connected to the other end of the outer end boundary line 311 in the first direction x. The outer end boundary line 333 is located outside the outer end boundary line 313 in the first direction x when viewed in the thickness direction z.

[0047] Although detailed illustrations will be omitted, the outer edge boundary 333 has an end portion closer to the outer edge boundary 331 than the center in the second direction y that protrudes outward in the first direction x. As a result, the corners of the outer edge boundary 331 and the outer edge boundary 333 (the upper left corner in FIG. 7) have a shape that protrudes outward in both the first direction x and the second direction y, similar to the corners of the outer edge boundary 331 and the outer edge boundary 332.

[0048] The outer end boundary line 334 is located on the other side of the second annular portion 330 in the second direction y, and extends in the first direction x. The other end of the outer end boundary line 334 in the first direction x is connected to the other end of the outer end boundary line 333 in the second direction y. The outer end boundary line 334 is located outside the outer end boundary line 314 in the second direction y when viewed in the thickness direction z.

[0049] Although detailed illustrations are omitted, the outer boundary 334 has an end closer to the outer boundary 333 than the center in the first direction x and protrudes outward in the second direction y. The outer boundary 333 has an end closer to the outer boundary 334 than the center in the second direction y and protrudes outward in the first direction x. The end of the outer boundary 334 closer to the outer boundary 333 is connected to the end of the outer boundary 333 closer to the outer boundary 334. As a result, the corners of the outer boundary 333 and the outer boundary 334 (the lower left corners in FIG. 7) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer boundary 331 and the outer boundary 332. The outer boundary 331 and the outer boundary 334 correspond to the "third outer boundary" in this disclosure. The outer boundary 332 and the outer boundary 333 correspond to the "fourth outer boundary" in this disclosure.

[0050] In this disclosure, "the outer boundary 331 (334) extends in the first direction x" means that the outer boundary 331 (334) extends in the first direction x as a whole. Therefore, as long as most of the outer boundary 331 (334) extends along the first direction x, the outer boundary 331 (334) may include a portion that extends in a direction different from the first direction x1. In this disclosure, "the outer boundary 332 (333) extends in the second direction y" means that the outer boundary 332 (333) extends in the second direction y as a whole. Therefore, as long as most of the outer boundary 332 (333) extends along the second direction y, the outer boundary 332 (333) may include a portion that extends in a direction different from the second direction y.

[0051] The inner end boundary line 341 is located on one side of the second direction y in the second annular portion 330 and extends in the first direction x. The inner end boundary line 341 is located inside the inner end boundary line 321 in the second direction y as viewed in the thickness direction z. The inner end boundary line 342 is located on one side of the first direction x in the second direction y in the second annular portion 330 and extends in the second direction y. One side end of the inner end boundary line 342 in the second direction y is connected to one side end of the inner end boundary line 341 in the first direction x. The inner end boundary line 342 is located inside the inner end boundary line 322 in the first direction x as viewed in the thickness direction z. The inner end boundary line 343 is located on the other side of the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the inner end boundary line 343 in the second direction y is connected to the other side end of the inner end boundary line 341 in the first direction x. The inner end boundary line 343 is located inside the inner end boundary line 323 in the first direction x as viewed in the thickness direction z. The inner end boundary line 344 is located on the other side of the second direction y in the second annular portion 330 and extends in the first direction x. The other end of the inner end boundary line 344 in the first direction x is connected to the other end of the inner end boundary line 343 in the second direction y. The inner end boundary line 344 is located inside the inner end boundary line 324 in the second direction y as viewed in the thickness direction z. The inner end boundary line 341 and the inner end boundary line 344 correspond to the "third inner end boundary line" in this disclosure. The inner end boundary line 342 and the inner end boundary line 343 correspond to the "fourth inner end boundary line" in this disclosure.

[0052] In the present disclosure, "the inner end boundary line 341 (344) extends in the first direction x" means that the inner end boundary line 341 (344) extends in the first direction x as a whole. Therefore, as long as the majority of the inner end boundary line 341 (344) extends along the first direction x, the inner end boundary line 341 (344) may include a portion that extends in a direction different from the first direction x1. In the present disclosure, "the inner end boundary line 342 (343) extends in the second direction y" means that the inner end boundary line 342 (343) extends in the second direction y as a whole. Therefore, as long as the majority of the inner end boundary line 342 (343) extends along the second direction y, the inner end boundary line 342 (343) may include a portion that extends in a direction different from the second direction y.

[0053] The inner end boundary line 345 is located in the second annular portion 330 toward one side in the first direction x and toward the other side in the second direction y, and extends in the first direction x. One side end of the inner end boundary line 345 in the first direction x is connected to the other side end of the inner end boundary line 342 in the second direction y. The inner end boundary line 325 is located inside the inner end boundary line 325 in the second direction y when viewed in the thickness direction z. The inner end boundary line 346 is located in the second annular portion 330 toward one side in the first direction x and toward the other side in the second direction y, and extends in the second direction y. The other side end of the inner end boundary line 346 in the second direction y is connected to the other side end of the inner end boundary line 345 in the first direction x. The inner end boundary line 346 is located inside the inner end boundary line 326 in the first direction x when viewed in the thickness direction z. In addition, in this embodiment, the inner end boundary line 346 is also connected to the inner end boundary line 344.

[0054] As shown in FIG. 10, in this embodiment, the inner end boundary line 345 includes an inner end boundary line first portion 345A and an inner end boundary line overhanging portion 345E. The inner end boundary line first portion 345A extends linearly along the first direction x, and occupies most of the inner end boundary line 345 except for the end portion. The inner end boundary line overhanging portion 345E is connected to the inner end boundary line first portion 345A, and is located at the end portion closer to the inner end boundary line 346. The inner end boundary line overhanging portion 345E is located inside the inner end boundary line overhanging portion 345E in the second direction y. Therefore, the end portion (inner end boundary line overhanging portion 345E) closer to the inner end boundary line 346 overhangs inward in the second direction y compared to the center (inner end boundary line first portion 345A) in the first direction x.

[0055] The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line overhanging portion 346E. The inner end boundary line first portion 346A extends linearly along the second direction y and occupies most of the inner end boundary line 346 except for the end portion. The inner end boundary line overhanging portion 346E is connected to the inner end boundary line first portion 346A and is located at the end portion closer to the inner end boundary line 345. The inner end boundary line overhanging portion 346E is located inside the inner end boundary line first portion 346A in the first direction x. Therefore, the inner end boundary line 346 has an end portion (inner end boundary line overhanging portion 346E) closer to the inner end boundary line 345 than the center (inner end boundary line first portion 346A) in the second direction y that overhangs inward in the first direction x. The inner end boundary line overhanging portion 346E is also connected to the inner end boundary line overhanging portion 345E. In FIG. 10, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between the inner end boundary line overhang 345E and the inner end boundary line overhang 346E. As a result, the corners of the inner end boundary line 345 and the inner end boundary line 346 (the inner end boundary line overhang 345E and the inner end boundary line overhang 346E) are shaped to overhang inward in both the first direction x and the second direction y. The inner end boundary line 345 corresponds to the "seventh inner end boundary line" in this disclosure. The inner end boundary line 346 corresponds to the "eighth inner end boundary line" in this disclosure. In this disclosure, "the inner end boundary line 345 extends in the first direction x" means that the inner end boundary line 345 extends as a whole in the first direction x. Therefore, as long as most of the inner end boundary line 345 extends along the first direction x, the inner end boundary line 345 may include a portion that extends in a direction different from the first direction x1. In the present disclosure, "the inner end boundary line 346 extends in the second direction y" means that the inner end boundary line 346 extends generally in the second direction y. Therefore, as long as most of the inner end boundary line 346 extends along the second direction y, the inner end boundary line 346 may include a portion that extends in a direction different from the second direction y.

[0056] As shown in FIG. 7, the outer end boundary line 335 is located toward one side in the first direction x and toward the other side in the second direction y in the second annular portion 330, and extends in the first direction x. One side end of the outer end boundary line 335 in the first direction x is connected to the other side end of the outer end boundary line 332 in the second direction y. The outer end boundary line 335 is located outside the outer end boundary line 315 in the second direction y as viewed in the thickness direction z. The outer end boundary line 336 is located toward one side in the first direction x and toward the other side in the second direction y in the second annular portion 330, and extends in the second direction y. The other side end of the outer end boundary line 336 in the second direction y is connected to the other side end of the outer end boundary line 335 in the first direction x. The outer end boundary line 336 is located outside the outer end boundary line 316 in the first direction x as viewed in the thickness direction z. In this embodiment, the outer boundary line 336 is also connected to the outer boundary line 334. The outer boundary line 335 corresponds to the "seventh outer boundary line" in this disclosure. The outer boundary line 336 corresponds to the "eighth outer boundary line" in this disclosure. In this disclosure, "the outer boundary line 335 extends in the first direction x" means that the outer boundary line 335 extends in the first direction x as a whole. Therefore, as long as most of the outer boundary line 335 extends along the first direction x, the outer boundary line 335 may include a portion that extends in a direction different from the first direction x1. In this disclosure, "the outer boundary line 336 extends in the second direction y" means that the outer boundary line 336 extends in the second direction y as a whole. Therefore, as long as most of the outer boundary line 336 extends along the second direction y, the outer boundary line 336 may include a portion that extends in a direction different from the second direction y.

[0057] 7 and 8, the metal laminate section 4 is disposed across the first electrode 21 and the insulating section 3, and has a structure in which a plurality of metal layers are laminated. In this embodiment, the metal laminate section 4 includes a first metal layer 41, a second metal layer 42, and a third metal layer 43.

[0058] The first metal layer 41 is disposed across the first electrode 21 and the insulating section 3 (second insulating layer 33). Specifically, the first metal layer 41 covers the first electrode pad portion 212 of the first electrode 21 located inside the inner edge 302 of the insulating section 3 (second insulating layer 33) as viewed in the thickness direction z, and a part of the second insulating layer 33 (second annular portion 330). The first metal layer 41 has a first extension portion 411 located at the outer periphery as viewed in the thickness direction z. A first edge 412, which is the outer periphery of the first metal layer 41, is located between the outer edge 301 and the inner edge 302 of the insulating section 3 (second insulating layer 33) as viewed in the thickness direction z. The constituent material of the first metal layer 41 includes titanium (Ti). The thickness of the first metal layer 41 is, for example, 0.1 μm to 0.5 μm.

[0059] The second metal layer 42 is laminated on the first metal layer 41. The second metal layer 42 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The second metal layer 42 covers an area located inside the first extending portion 411, except for the outer periphery (first extending portion 411) of the first metal layer 41 when viewed in the thickness direction z. As a result, the first extending portion 411 of the first metal layer 41 is not covered by the second metal layer 42 and is exposed from the second metal layer 42. The second metal layer 42 has a second extending portion 421 located at the outer periphery when viewed in the thickness direction z. A second edge 422, which is the outer periphery of the second metal layer 42, is located between the first edge 412 of the first metal layer 41 and the inner edge 302 of the insulating portion 3 (second insulating layer 33) when viewed in the thickness direction z. The constituent material of the second metal layer 42 includes nickel. The second metal layer 42 has a thickness of, for example, 0.1 μm to 0.5 μm.

[0060] The third metal layer 43 is laminated on the second metal layer 42. The third metal layer 43 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The third metal layer 43 covers an area located inside the second extending portion 421, except for the outer periphery (second extending portion 421) of the second metal layer 42 when viewed in the thickness direction z. As a result, the second extending portion 421 of the second metal layer 42 is not covered by the third metal layer 43 and is exposed from the third metal layer 43. The third edge 431, which is the outer periphery of the third metal layer 43, is located between the second edge 422 of the second metal layer 42 and the inner edge 302 of the insulating portion 3 (second insulating layer 33) when viewed in the thickness direction z. The constituent material of the second metal layer 42 includes silver (Ag). The thickness of the third metal layer 43 is greater than both the thickness of the first metal layer 41 and the thickness of the second metal layer 42. The third metal layer 43 has a thickness of, for example, 0.5 μm to 1.5 μm.

[0061] As can be understood from FIG. 8 and the above description, the second edge 422 of the second metal layer 42 is located closer to the inner edge 302 of the insulating part 3 (second insulating layer 33) than the first edge 412 of the first metal layer 41. The third edge 431 of the third metal layer 43 is located closer to the inner edge 302 than the second edge 422 of the second metal layer 42. As a result, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are stacked in a stepped manner. In the configuration shown in FIG. 8, the first dimension L1, which is the distance between the first edge 412 and the second edge 422 in the thickness direction z, is, for example, 10 to 50 times the thickness of the first metal layer 41. The second dimension L2, which is the distance between the second edge 422 and the third edge 431 in the thickness direction z, is, for example, 10 to 50 times the thickness of the second metal layer 42. A third dimension L3, which is the distance between the third edge 431 and the inner edge 302 as viewed in the thickness direction z, is, for example, 1 to 5 times the thickness of the third metal layer 43.

[0062] As shown in FIGS. 3 and 4, the conductive member 5 is joined to the first electrode 21 of the semiconductor element 2 and the second lead 1B. The conductive member 5 is made of a metal plate material. The metal is copper or a copper alloy. The conductive member 5 is a metal plate material that has been subjected to a punching process or a bending process. In this embodiment, the conductive member 5 has an element-side bonding portion 51, a lead-side bonding portion 52, and an intermediate portion 53. As shown in FIG. 4, the element-side bonding portion 51, the lead-side bonding portion 52, and the intermediate portion 53 are appropriately bent and connected when viewed in the first direction x.

[0063] The element-side joint portion 51 is joined to the first electrode pad portion 212 of the first electrode 21 via a first conductive bonding material 61. The first conductive bonding material 61 conductively bonds the element-side joint portion 51 (conductive member 5) and the first electrode pad portion 212. The first conductive bonding material 61 is, for example, solder.

[0064] As shown in FIGS. 4 to 6, the element-side bonding portion 51 has a protrusion 511 and a recess 512. The protrusion 511 protrudes downward (to the other side in the thickness direction z) from the lower surface (the surface facing the element principal surface 201) of the element-side bonding portion 51. In the illustrated example, two protrusions 511 are provided at an interval in the second direction y, and each protrusion 511 extends in the first direction x with a constant width. The recess 512 is a portion that is partially recessed upward (to one side in the thickness direction z) from the lower surface of the element-side bonding portion 51. In the illustrated example, two recesses 512 are provided at an interval in the first direction x, and each recess 512 extends in the second direction y with a constant width.

[0065] When the first electrode pad portion 212 and the element-side bonding portion 51 are bonded to each other, the protruding portion 511 is pressed against the first electrode pad portion 212, and a sufficient amount of the first conductive bonding material 61 is present around the protruding portion 511. This allows the electrical continuity between the element-side bonding portion 51 and the first electrode pad portion 212 to be properly maintained. In addition, a recess 512 is provided on the lower surface of the element-side bonding portion 51. This allows the voids (air gaps) to be accommodated in the recess 512 even if they exist in the first conductive bonding material 61. Therefore, the voids in the first conductive bonding material 61 can be suppressed. Instead of the recess 512 shown in the figure, a through hole penetrating the element-side bonding portion 51 in the thickness direction z may be formed in order to suppress the voids.

[0066] The lead-side joint 52 is joined to the bonding portion 13 of the second lead 1B via a third conductive bonding material 63. The third conductive bonding material 63 conductively bonds the lead-side joint 52 (conductive member 5) and the bonding portion 13 (second lead 1B). The third conductive bonding material 63 is, for example, solder. As shown in FIG. 4, the lead-side joint 52 has a convex portion located on the other side (lower side in the figure) in the thickness direction z from the surrounding area. When the bonding portion 13 and the lead-side joint 52 are joined, the convex portion is pressed against the bonding portion 13, and a sufficient amount of the third conductive bonding material 63 is present around the convex portion. This allows the conduction between the lead-side joint 52 and the bonding portion 13 to be properly maintained.

[0067] The intermediate portion 53 is located between the element-side joint portion 51 and the lead-side joint portion 52 in the second direction y. The intermediate portion 53 is connected to both the element-side joint portion 51 and the lead-side joint portion 52.

[0068] The sealing resin 7 covers parts of the first lead 1A, the second lead 1B, and the third lead 1C, the semiconductor element 2, the insulating portion 3, the metal laminate portion 4, the conductive member 5, and the wire 65. The sealing resin 7 is made of, for example, a black epoxy resin.

[0069] 1, 2, 4, and 6, the sealing resin 7 has a sealing resin main surface 71, a sealing resin rear surface 72, and a sealing resin side surface 73. The sealing resin main surface 71 and the sealing resin rear surface 72 face opposite sides in the thickness direction z. The sealing resin main surface 71 faces the same side as the element main surface 201 and the element mounting surface 111. The sealing resin rear surface 72 faces the same side as the element rear surface 202 and the rear surface mounting portion 112. The sealing resin side surface 73 is connected to the sealing resin main surface 71 and the sealing resin rear surface 72, and is slightly inclined with respect to the thickness direction z.

[0070] Next, an example of a method for manufacturing the semiconductor device A10 will be described below with reference to Figures 11 to 29. Figures 12, 14, 16, and 20 to 29 are cross-sectional views showing a step of the method for manufacturing the semiconductor device A10, and are cross-sectional views similar to the partially enlarged cross-sectional view shown in Figure 8.

[0071] First, as shown in FIG. 11, a substrate 2' is prepared. The substrate 2' has a semiconductor layer 20', a first electrode 21, and a third electrode 23. The semiconductor layer 20' is a member that becomes the element body 20 of the semiconductor element 2. In this embodiment, the semiconductor layer 20' is sized so that it can be divided into a plurality of element bodies 20 (semiconductor elements 2) by cutting the semiconductor layer 20' (substrate 2') in a later process. The plan views in FIG. 11 and subsequent figures show an area corresponding to one element body 20 (semiconductor element 2) to be divided. The semiconductor layer 20' has a main surface 201'. The main surface 201' faces one side in the thickness direction z. The first electrode 21 and the third electrode 23 are arranged on the main surface 201'. Although not shown, a plurality of first electrodes 21 and a plurality of third electrodes 23 are arranged on the main surface 201' at intervals in the first direction x and the second direction y, respectively. In the plan views of FIG. 11 and subsequent figures, the region corresponding to the element principal surface 201 of one element body 20 (semiconductor element 2) to be divided is shown as principal surface 201'. This step corresponds to the "step of preparing a substrate" in the present disclosure. Note that unlike the example shown in FIG. 11, the case in which a semiconductor element 2 having a single element body 20 corresponding to the semiconductor layer 20' is prepared as a substrate 2' also corresponds to the "step of preparing a substrate" in the present disclosure.

[0072] Next, as shown in FIG. 13, a first insulating layer 31 is formed on the main surface 201' side of the substrate 2'. The first insulating layer 31 can be formed by a thin film forming technique such as CVD (chemical vapor deposition). In forming the first insulating layer 31, for example, a mask having an opening corresponding to the first annular portion 310 is placed on the substrate 2' to form a thin film made of SiN, and then the mask is removed. Thereby, the first insulating layer 31 including the first annular portion 310 is formed. Here, the first annular portion 310 is placed across the peripheral portion 211 of the first electrode 21 and the main surface 201'. The first annular portion 310 has outer end boundary lines 311, 312, 313, 314, 315, 316 and inner end boundary lines 321, 322, 323, 324, 325, 326 similar to the configuration described with reference to FIG. 7.

[0073] Next, as shown in FIG. 15, a second insulating layer 33 is formed on the main surface 201' side of the substrate 2'. The second insulating layer 33 can be formed by, for example, disposing polyamic acid (resin material) by coating and heating. In forming the second insulating layer 33, first, for example, a mask having an opening corresponding to the second annular portion 330 is disposed on the substrate 2', polyamic acid (resin material) is applied, and then the mask is removed. Thereby, the second annular portion 330 made of a resin material is disposed. The second annular portion 330 overlaps with the first annular portion 310 when viewed in the thickness direction z. Here, the second annular portion 330 has outer end boundary lines 331, 332, 333, 334, 335, 336 and inner end boundary lines 341, 342, 343, 344, 345, 346. The second annular portion 330 has a configuration similar to that described with reference to FIG. 7. On the other hand, the second annular portion 330 shown in Figure 15 differs from the configuration shown in Figure 7 in the shape of the corners of the outer end boundary lines 331 and 332 (the upper right corner in Figure 15), the shape of the corners of the outer end boundary lines 331 and 333 (the upper left corner in Figure 15), the shape of the corners of the outer end boundary lines 333 and 334 (the lower left corner in Figure 15), and the shape of the corners of the inner end boundary lines 345 and 346.

[0074] As shown in FIG. 17, the outer edge boundary line 331 includes an outer edge boundary line first portion 331A and an outer edge boundary line second portion 331B. The outer edge boundary line second portion 331B is connected to the outer edge boundary line first portion 331A and is located at the end portion closer to the outer edge boundary line 332. The outer edge boundary line second portion 331B is located outside the outer edge boundary line first portion 331A in the second direction y. In the illustrated example, the outer edge boundary line second portion 331B has an outer edge boundary line straight portion 331c and an outer edge boundary line connecting portion 331d. The outer edge boundary line straight portion 331c extends linearly along the first direction x. The outer edge boundary line connecting portion 331d is connected to both the outer edge boundary line first portion 331A and the outer edge boundary line straight portion 331c. Therefore, with respect to the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330, the distance (first distance D1) between the outer end boundary line 311 and the outer end boundary line 331 in the second direction y is greater at the end closer to the outer end boundary line 332 than at the center in the first direction x. The first distance D1 is not particularly limited, and in this embodiment, for example, the first distance D1 at the center in the first direction x (the distance in the second direction y between the outer end boundary line 311 and the outer end boundary line first portion 331A) is about 10 μm to 20 μm, and the first distance D1 at the end closer to the outer end boundary line 332 (the distance in the second direction y between the outer end boundary line 311 and the outer end boundary line straight portion 331c) is about 15 μm to 35 μm.

[0075] The outer edge boundary line 332 includes an outer edge boundary line first portion 332A and an outer edge boundary line second portion 332B. The outer edge boundary line second portion 332B is connected to both the outer edge boundary line first portion 332A and the outer edge boundary line straight portion 331c (the outer edge boundary line second portion 331B) and is located at the end portion closer to the outer edge boundary line 331. The outer edge boundary line second portion 332B is located outside the outer edge boundary line first portion 332A in the first direction x. In the illustrated example, the outer edge boundary line second portion 332B has an outer edge boundary line straight portion 332c and an outer edge boundary line connecting portion 332d. The outer edge boundary line straight portion 332c extends linearly along the second direction y. The outer edge boundary line connecting portion 332d is connected to both the outer edge boundary line first portion 332A and the outer edge boundary line straight portion 332c. Therefore, with respect to the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330, the distance between the outer end boundary line 312 and the outer end boundary line 332 in the first direction x (second distance D2) is greater at the end closer to the outer end boundary line 331 than at the center in the second direction y. The second distance D2 is not particularly limited, and in this embodiment, for example, the second distance D2 at the center in the second direction y (the distance in the first direction x between the outer end boundary line 312 and the outer end boundary line first portion 332A) is about 10 μm to 20 μm, and the second distance D2 at the end closer to the outer end boundary line 331 (the distance in the first direction x between the outer end boundary line 312 and the outer end boundary line straight portion 332c) is about 15 μm to 35 μm.

[0076] The outer edge boundary second part 332B is also connected to the outer edge boundary second part 331B. As a result, the corners of the outer edge boundary 331 and the outer edge boundary 332 (the outer edge boundary second part 331B and the outer edge boundary second part 332B) are shaped to protrude outward in both the first direction x and the second direction y. The corners of the outer edge boundary 331 and the outer edge boundary 332 shown in FIG. 17 (the outer edge boundary second part 331B and the outer edge boundary second part 332B) protrude outward further than the corners of the outer edge boundary 331 and the outer edge boundary 332 shown in FIG. 9 (the outer edge boundary protrusion part 331E and the outer edge boundary protrusion part 332E).

[0077] Although detailed illustrations will be omitted, the end of the outer boundary 331 closer to the outer boundary 333 is located outward in the second direction y, similar to the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B). Furthermore, the end of the outer boundary 333 closer to the outer boundary 331 is located outward in the first direction x, similar to the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B). As a result, the corners of the outer boundary 331 and the outer boundary 333 (the upper left corners in FIG. 15) have a shape that protrudes outward in both the first direction x and the second direction y, similar to the corners of the outer boundary 331 and the outer boundary 332.

[0078] Although detailed illustrations will be omitted, the end of the outer boundary 334 closer to the outer boundary 333 is located outward in the second direction y, similar to the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B). Furthermore, the end of the outer boundary 333 closer to the outer boundary 334 is located outward in the first direction x, similar to the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B). As a result, the corners of the outer boundary 333 and the outer boundary 334 (the lower left corner in FIG. 15) have a shape that protrudes outward in both the first direction x and the second direction y, similar to the corners of the outer boundary 331 and the outer boundary 332.

[0079] As shown in FIG. 18, the inner end boundary line 345 includes an inner end boundary line first portion 345A and an inner end boundary line second portion 345B. The inner end boundary line second portion 345B is connected to the inner end boundary line first portion 345A and is located at the end portion closer to the inner end boundary line 346. The inner end boundary line second portion 345B is located inside the inner end boundary line first portion 345A in the second direction y. In the illustrated example, the inner end boundary line second portion 345B has an inner end boundary line straight portion 345c and an inner end boundary line connecting portion 345d. The inner end boundary line straight portion 345c extends linearly along the first direction x. The inner end boundary line connecting portion 345d is connected to both the inner end boundary line first portion 345A and the inner end boundary line straight portion 345c. Therefore, with respect to the inner end boundary line 325 of the first annular portion 310 and the inner end boundary line 345 of the second annular portion 330, the distance between the inner end boundary line 325 and the inner end boundary line 345 in the second direction y (third distance D3) is greater at the end closer to the inner end boundary line 346 than at the center in the first direction x. The third distance D3 is not particularly limited, and in this embodiment, for example, the third distance D3 at the center in the first direction x (the distance in the second direction y between the inner end boundary line 325 and the inner end boundary line first portion 345A) is about 20 μm to 30 μm, and the third distance D3 at the end closer to the inner end boundary line 346 (the distance in the second direction y between the inner end boundary line 325 and the inner end boundary line straight portion 345c) is about 30 μm to 50 μm.

[0080] The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line second portion 346B. The inner end boundary line second portion 346B is connected to both the inner end boundary line first portion 346A and the inner end boundary line straight portion 345c (inner end boundary line second portion 345B) and is located at the end portion closer to the inner end boundary line 345. The inner end boundary line second portion 346B is located inside the inner end boundary line first portion 346A in the first direction x. In the illustrated example, the inner end boundary line second portion 346B has an inner end boundary line straight portion 346c and an inner end boundary line connecting portion 346d. The inner end boundary line straight portion 346c extends linearly along the second direction y. The inner end boundary line connecting portion 346d is connected to both the inner end boundary line first portion 346A and the inner end boundary line straight portion 346c. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, the distance between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x (fourth distance D4) is greater at the end closer to the inner end boundary line 345 than at the center in the second direction y. The fourth distance D4 is not particularly limited, and in this embodiment, for example, the fourth distance D4 at the center in the second direction y (the distance in the first direction x between the inner end boundary line 326 and the inner end boundary line first portion 346A) is about 20 μm to 30 μm, and the fourth distance D4 at the end closer to the inner end boundary line 345 (the distance in the first direction x between the inner end boundary line 326 and the inner end boundary line straight portion 346c) is about 30 μm to 50 μm.

[0081] In addition, the inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. As a result, the corners of the inner end boundary line 3435 and the inner end boundary line 346 (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) are shaped to protrude inward in both the first direction x and the second direction y. The corners of the inner end boundary line 345 and the inner end boundary line 346 shown in Fig. 18 (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) protrude more inward than the corners of the inner end boundary line 345 and the inner end boundary line 346 shown in Fig. 10 (the inner end boundary line overhanging portion 345E and the inner end boundary line overhanging portion 346E).

[0082] FIG. 19 shows the second annular portion 330 after the heat treatment. Here, the second annular portion 330 (second insulating layer 33) made of polyimide resin is formed. The second annular portion 330 after the heat treatment shrinks compared to the second annular portion 330 before the heat treatment shown in FIG. 15. The shrinkage of the resin material portion is remarkable at the corners of the outer end boundary line 331 and the outer end boundary line 332, and the corners of the inner end boundary line 345 and the inner end boundary line 346, etc. As shown in FIG. 19, the outer end boundary line overhanging portion 331E and the outer end boundary line overhanging portion 332E are formed at the corners of the outer end boundary line 331 and the outer end boundary line 332, and the inner end boundary line overhanging portion 345E and the inner end boundary line overhanging portion 346E are formed at the corners of the inner end boundary line 345 and the inner end boundary line 346. In this way, the insulating portion 3 including the first insulating layer 31 and the second insulating layer 33 is formed.

[0083] Next, as shown in Fig. 20, a first metal layer material 41' is formed. The first metal layer material 41' is formed at least on the insulating portion 3 and the first electrode 21. The first metal layer material 41' is a metal layer formed by a thin film formation technique such as sputtering. The first metal layer material 41' is, for example, a Ti layer.

[0084] Next, as shown in FIG. 21, a second metal layer material 42' is formed. The second metal layer material 42' is formed on the first metal layer material 41'. The second metal layer material 42' is a metal layer formed by a thin film formation technique such as sputtering. The second metal layer material 42' is made of a metal material different from the first metal layer material 41', and is, for example, a Ni layer.

[0085] Next, as shown in FIG. 22, a third metal layer material 43' is formed. The third metal layer material 43' is formed on the second metal layer material 42'. The third metal layer material 43' is a metal layer formed by a thin film formation technique such as sputtering. The third metal layer material 43' is made of a metal material different from both the first metal layer material 41' and the second metal layer material 42', and is, for example, an Ag layer.

[0086] Next, as shown in FIG. 23, a resist 8 is formed. The resist 8 can be formed by exposure and development using, for example, photolithography. In forming the resist 8, a photosensitive material is applied onto the third metal layer material 43', and the photosensitive material is exposed to light in a predetermined pattern and developed. This forms the resist 8 having an opening 81. The opening 81 overlaps a part of the insulating part 3 (the part on the outer edge 301 side) when viewed in the thickness direction z. Here, since the second insulating layer 33 is relatively thick, the thickness of the resist 8 formed across the first electrode pad part 212 and the second insulating layer 33 is made large so that a large step does not occur in the resist 8. In addition, in order to properly form the opening 81 in the thick resist 8, preferably, the amount of exposure to the photosensitive material is set to be at least twice as much as usual, and development is performed multiple times.

[0087] Next, as shown in FIG. 24, a part of the third metal layer material 43' is removed. Specifically, the third metal layer material 43' is wet etched using the resist 8 as a mask (first etching step). The wet etching process of the third metal layer material 43' is performed using a chemical solution that dissolves the third metal layer material 43'. As a result, as shown in FIG. 24, in the third metal layer material 43', a part of the part exposed from the resist 8 and a part of the part covered with the resist 8 are removed, and an edge 431' is formed.

[0088] Next, as shown in FIG. 25, a portion of the second metal layer material 42' is removed. Specifically, the second metal layer material 42' is wet etched using the resist 8 as a mask (second etching step). The wet etching process of the second metal layer material 42' is performed using a chemical solution that dissolves the second metal layer material 42'. As a result, as shown in FIG. 25, in the second metal layer material 42', a portion exposed from the third metal layer material 43' and a portion of a portion covered with the third metal layer material 43' are removed to form an edge 421'.

[0089] Next, as shown in FIG. 26, a part of the first metal layer material 41' is removed. Specifically, the first metal layer material 41' is wet etched using the resist 8 as a mask (third etching step). The wet etching process of the first metal layer material 41' is performed using a chemical solution that dissolves the first metal layer material 41'. As a result, as shown in FIG. 26, a part of the part of the first metal layer material 41' exposed from the second metal layer material 42' and a part of the part covered with the second metal layer material 42' are removed, and a first metal layer 41 having a first edge 412 is formed.

[0090] Next, as shown in FIG. 27, a part of the second metal layer material 42' is removed. Specifically, the second metal layer material 42' is wet etched using the resist 8 as a mask (fourth etching step). The wet etching process of the second metal layer material 42' is performed using a chemical solution that dissolves the second metal layer material 42'. As a result, as shown in FIG. 27, the part of the second metal layer material 42' exposed from the first metal layer 41 and part of the part covered with the first metal layer 41 are removed, and the second metal layer 42 having the second edge 422 is formed.

[0091] Next, as shown in FIG. 28, a part of the third metal layer material 43' is removed. Specifically, the third metal layer material 43' is wet-etched using the resist 8 as a mask (fifth etching step). The wet etching process of the third metal layer material 43' is performed using a chemical solution that dissolves the third metal layer material 43'. As a result, as shown in FIG. 28, a part of the third metal layer material 43' exposed from the second metal layer 42 and a part of the part covered with the second metal layer 42 are removed, and the third metal layer 43 having the third edge 431 is formed. In this way, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are formed, which are stacked in a stepped shape. Note that the positions of the first edge 412, the second edge 422, and the third edge 431 (the positions of the first edge 412, the second edge 422, and the third edge 431 in the first direction x in FIG. 28) can be adjusted by changing the etching conditions in each etching step. Next, the resist 8 is removed as shown in FIG.

[0092] Thereafter, the semiconductor layer 20' (substrate 2') is cut along a plane perpendicular to the first direction x and a plane perpendicular to the second direction y, and divided into a plurality of semiconductor elements 2. Next, a lead frame having a shape including a first lead 1A, a second lead 1B, and a third lead 1C is prepared, and the semiconductor element 2, the conductive member 5, and the wire 65 are bonded to the lead frame. Next, the sealing resin 7 is formed by molding. Next, the lead frame is appropriately cut to separate the first lead 1A, the second lead 1B, and the third lead 1C from one another. Through the above steps, the semiconductor device A10 shown in FIGS. 1 to 10 is manufactured.

[0093] Next, the effects of this embodiment will be described.

[0094] In the manufacture of the semiconductor device A10, a first insulating layer 31 and a second insulating layer 33 are formed on the main surface 201' side of the substrate 2'. In the step of forming the first insulating layer 31, a first annular portion 310 is formed, which is disposed across the peripheral portion 211 of the first electrode 21 and the main surface 201'. In the step of forming the second insulating layer 33, a second annular portion 330 made of a resin material is disposed so as to overlap the first annular portion 310 as viewed in the thickness direction z. As shown in FIG. 15 and FIG. 17, the distance (first distance D1) in the second direction y between the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330 is larger at the end closer to the outer end boundary line 332 than at the center in the first direction x. Further, the distance (second distance D2) in the first direction x between the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 is larger at the end closer to the outer end boundary line 331 than at the center in the second direction y. As a result, the volume of the second annular portion 330 is made larger outside the corners of the outer end boundary line 331 and the outer end boundary line 332 than at other portions. With this configuration, even if the second annular portion 330 shrinks at the corners of the outer end boundary line 331 and the outer end boundary line 332 after the heat treatment of the second annular portion 330, the state of covering the first insulating layer 31 (first annular portion 310) which is the lower layer is maintained, and the first insulating layer 31 can be prevented from being exposed. Therefore, the influence of shrinkage of the second annular portion 330 (second insulating layer 33) which is the resin material portion can be suppressed. In addition, in the second annular portion 330, the corners of the outer end boundary line 331 and the outer end boundary line 333, and the corners of the outer end boundary line 333 and the outer end boundary line 334 are configured in the same manner as the corners of the outer end boundary line 331 and the outer end boundary line 332 described above, and provide the same effect as the corners of the outer end boundary line 331 and the outer end boundary line 333.

[0095] Furthermore, the corners of the outer end boundary line 331 and the outer end boundary line 332, the corners of the outer end boundary line 331 and the outer end boundary line 333, and the corners of the outer end boundary line 333 and the outer end boundary line 334, whose shapes have been devised as described above, are located near the corners of the semiconductor element 2 when viewed in the thickness direction z. With this configuration, even when the semiconductor layer 20' is cut to divide it into a plurality of semiconductor elements 2, it is possible to appropriately protect the corners of the first insulating layer 31 (first annular portion 310) located near the division lines.

[0096] In the step of arranging the second annular portion 330 in the process of forming the second insulating layer 33, the outer end boundary line 331 includes a first outer end boundary line portion 331A and a second outer end boundary line portion 331B. The first outer end boundary line portion 331A extends linearly along the first direction x. The second outer end boundary line portion 331B is connected to the first outer end boundary line portion 331A and is located at an end portion closer to the outer end boundary line 332. The second outer end boundary line portion 331B is located outside the first outer end boundary line portion 331A in the second direction y. The outer end boundary line 332 includes a first outer end boundary line portion 332A and a second outer end boundary line portion 332B. The first outer end boundary line portion 332A extends linearly along the second direction y. The second outer edge boundary line portion 332B is connected to both the first outer edge boundary line portion 332A and the second outer edge boundary line portion 331B, and is located at the end portion closer to the outer edge boundary line 331. The second outer edge boundary line portion 332B is located outside the first outer edge boundary line portion 332A in the first direction x. As a result, the corners of the outer edge boundary line 331 and the outer edge boundary line 332 (the second outer edge boundary line portion 331B and the second outer edge boundary line portion 332B) have a shape that protrudes outward in both the first direction x and the second direction y. This type of configuration can be achieved relatively easily by modifying the shape of the corners of the second annular portion 330.

[0097] In the step of arranging the second annular portion 330 in the process of forming the second insulating layer 33, as shown in Figs. 15 and 18, the distance (third distance D3) between the inner end boundary line 325 of the first annular portion 310 and the inner end boundary line 345 of the second annular portion 330 in the second direction y is larger at the end closer to the inner end boundary line 346 than at the center in the first direction x. Also, the distance (fourth distance D4) between the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330 in the first direction x is larger at the end closer to the inner end boundary line 345 than at the center in the second direction y. As a result, the volume of the second annular portion 330 is made larger inside the corners of the inner end boundary line 345 and the inner end boundary line 346 than at other portions. With this configuration, even if the second annular portion 330 shrinks at the corners of the inner end boundary line 345 and the inner end boundary line 346 after the heat treatment of the second annular portion 330, the state in which the second annular portion 330 covers the underlying first insulating layer 31 (first annular portion 310) is maintained, and exposure of the first insulating layer 31 can be prevented. Therefore, the influence of shrinkage of the second annular portion 330 (second insulating layer 33), which is a resin material portion, can be suppressed.

[0098] In the step of arranging the second annular portion 330 in the process of forming the second insulating layer 33, the inner end boundary line 345 includes an inner end boundary line first portion 345A and an inner end boundary line second portion 345B. The inner end boundary line first portion 345A extends linearly along the first direction x. The inner end boundary line second portion 345B is connected to the inner end boundary line first portion 345A and is located at an end portion closer to the inner end boundary line 346. The inner end boundary line second portion 345B is located inside the inner end boundary line first portion 345A in the second direction y. The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line second portion 346B. The inner end boundary line first portion 346A extends linearly along the second direction y. The inner end boundary line second portion 346B is connected to both the inner end boundary line first portion 346A and the inner end boundary line second portion 345B, and is located at the end portion closer to the inner end boundary line 345. The inner end boundary line second portion 346B is located inside the inner end boundary line first portion 346A in the first direction x. As a result, the corners of the inner end boundary line 345 and the inner end boundary line 346 (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) have a shape that protrudes inward in both the first direction x and the second direction y. This type of configuration can be achieved relatively easily by modifying the shape of the corners of the second annular portion 330.

[0099] <First Modification of First Embodiment> Fig. 30 shows a step of a method for manufacturing a semiconductor device according to a first modified example of the first embodiment. In the figures following Fig. 30, elements that are the same as or similar to those of the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted as appropriate.

[0100] In this modification, in the step of forming the second insulating layer 33 in the manufacturing of the semiconductor device, the shape of the second annular portion 330 when the second annular portion 330 is arranged is different from that of the above embodiment. As shown in Fig. 30, in the second annular portion 330 arranged on the main surface 201' side of the substrate 2', the shapes of the corners (upper right corner in the figure) of the outer edge boundary 331 and the outer edge boundary 332, the corners (upper left corner in the figure) of the outer edge boundary 331 and the outer edge boundary 333, the corners (lower left corner in the figure) of the outer edge boundary 333 and the outer edge boundary 334, and the corners (lower left corner in the figure) of the inner edge boundary 345 and the inner edge boundary 346 are different from the configuration shown in Fig. 15.

[0101] 31, the outer edge boundary line 331 includes a first outer edge boundary line portion 331A and a second outer edge boundary line portion 331B, but the configuration of the second outer edge boundary line portion 331B is different from that of the above embodiment. In this modification, the second outer edge boundary line portion 331B is arc-shaped, connected to the linear first outer edge boundary line portion 331A, and positioned outside the first outer edge boundary line portion 331A in the second direction y. Therefore, with respect to the outer edge boundary line 311 of the first annular portion 310 and the outer edge boundary line 331 of the second annular portion 330, the distance (first distance D1) between the outer edge boundary line 311 and the outer edge boundary line 331 in the second direction y is larger at the end portion closer to the outer edge boundary line 332 than at the center in the first direction x.

[0102] The outer edge boundary line 332 includes an outer edge boundary line first portion 332A and an outer edge boundary line second portion 332B, but the configuration of the outer edge boundary line second portion 332B is different from that of the above embodiment. In this modification, the outer edge boundary line second portion 332B is arc-shaped, connected to the linear outer edge boundary line first portion 332A, and positioned outside the outer edge boundary line first portion 332A in the first direction x. Therefore, with respect to the outer edge boundary line 312 of the first annular portion 310 and the outer edge boundary line 332 of the second annular portion 330, the distance (second distance D2) between the outer edge boundary line 312 and the outer edge boundary line 332 in the first direction x is larger at the end portion closer to the outer edge boundary line 331 than at the center in the second direction y. The outer edge boundary line second portion 332B is also connected to the outer edge boundary line second portion 331B. 31, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between the second outer edge boundary portion 331B and the second outer edge boundary portion 332B. As a result, the corners of the outer edge boundary 331 and the outer edge boundary 332 (the second outer edge boundary portion 331B and the second outer edge boundary portion 332B) protrude outward in both the first direction x and the second direction y.

[0103] Although detailed illustrations will be omitted, the end of the outer boundary 331 closer to the outer boundary 333 is arc-shaped and located outward in the second direction y, similar to the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B). Moreover, the end of the outer boundary 333 closer to the outer boundary 331 is arc-shaped and located outward in the first direction x, similar to the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B). As a result, the corners of the outer boundary 331 and the outer boundary 333 (the upper left corners in FIG. 30) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer boundary 331 and the outer boundary 332.

[0104] Although detailed illustrations will be omitted, the end of the outer boundary 334 closer to the outer boundary 333 is arc-shaped and located outward in the second direction y, similar to the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B). Also, the end of the outer boundary 333 closer to the outer boundary 334 is arc-shaped and located outward in the first direction x, similar to the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B). As a result, the corners of the outer boundary 333 and the outer boundary 334 (the lower left corners in FIG. 30) are shaped to protrude outward in both the first direction x and the second direction y, similar to the corners of the outer boundary 331 and the outer boundary 332.

[0105] 32, the inner end boundary line 345 includes a first inner end boundary line portion 345A and a second inner end boundary line portion 345B, but the configuration of the second inner end boundary line portion 345B is different from that of the above embodiment. In this modification, the second inner end boundary line portion 345B is arc-shaped, connected to the linear first inner end boundary line portion 345A, and positioned inside the first inner end boundary line portion 345A in the second direction y. Therefore, with respect to the inner end boundary line 325 of the first annular portion 310 and the inner end boundary line 345 of the second annular portion 330, the distance (third distance D3) between the inner end boundary line 325 and the inner end boundary line 345 in the second direction y is greater at the end portion closer to the inner end boundary line 346 than at the center in the first direction x.

[0106] The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line second portion 346B, but the configuration of the inner end boundary line second portion 346B is different from that of the above embodiment. In this modification, the inner end boundary line second portion 346B is arc-shaped, connected to the linear inner end boundary line first portion 346A, and located inside the inner end boundary line first portion 346A in the first direction x. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, the distance (fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is larger at the end portion closer to the inner end boundary line 345 than at the center in the second direction y. The inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. 32, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between inner end boundary line second portion 345B and inner end boundary line second portion 346B. As a result, the corners of inner end boundary line 3435 and inner end boundary line 346 (inner end boundary line second portion 345B and inner end boundary line second portion 346B) have a shape that protrudes inward in both the first direction x and the second direction y.

[0107] In the manufacturing method of the semiconductor device of this modification, in the step of forming the second insulating layer 33, the second annular portion 330 is arranged overlapping the first annular portion 310, and the distance (first distance D1) between the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330 in the second direction y is larger at an end closer to the outer end boundary line 332 than at the center in the first direction x. Also, the distance (second distance D2) between the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 in the first direction x is larger at an end closer to the outer end boundary line 331 than at the center in the second direction y. As a result, the volume of the second annular portion 330 is made larger outside the corners of the outer end boundary line 331 and the outer end boundary line 332 than at other portions. According to this configuration, even if the second annular portion 330 shrinks at the corners of the outer end boundary line 331 and the outer end boundary line 332 after the heat treatment of the second annular portion 330, the state in which the second annular portion 330 covers the first insulating layer 31 (first annular portion 310) which is the underlying layer can be maintained, and the first insulating layer 31 can be prevented from being exposed. Therefore, the influence of shrinkage of the second annular portion 330 (second insulating layer 33) which is the resin material portion can be suppressed. In addition, within the scope of the same configuration as the above embodiment, the same action and effect as the above embodiment can be achieved.

[0108] <Second Modification of First Embodiment> 33 and 34 show a process of a method for manufacturing a semiconductor device according to a second modification of the first embodiment.

[0109] In this modification, in the step of forming the second insulating layer 33 in the manufacture of a semiconductor device, the shape of the second annular portion 330 when the second annular portion 330 is disposed is different from that of the above embodiment.

[0110] 33, the outer edge boundary line 331 includes a first outer edge boundary line portion 331A and a second outer edge boundary line portion 331B, but the configuration of the second outer edge boundary line portion 331B is different from that of the above embodiment. In this modification, the second outer edge boundary line portion 331B forms a part of a polygon (a pentagon in the illustrated example), is connected to the linear first outer edge boundary line portion 331A, and is located outside the first outer edge boundary line portion 331A in the second direction y. Therefore, with respect to the outer edge boundary line 311 of the first annular portion 310 and the outer edge boundary line 331 of the second annular portion 330, the distance (first distance D1) between the outer edge boundary line 311 and the outer edge boundary line 331 in the second direction y is set to be larger at the end portion closer to the outer edge boundary line 332 than at the center in the first direction x.

[0111] The outer edge boundary line 332 includes an outer edge boundary line first portion 332A and an outer edge boundary line second portion 332B, but the configuration of the outer edge boundary line second portion 332B is different from that of the above embodiment. In this modification, the outer edge boundary line second portion 332B forms a part of a polygon (a pentagon in the illustrated example), is connected to the linear outer edge boundary line first portion 332A, and is located outside the outer edge boundary line first portion 332A in the first direction x. Therefore, with respect to the outer edge boundary line 312 of the first annular portion 310 and the outer edge boundary line 332 of the second annular portion 330, the distance (second distance D2) between the outer edge boundary line 312 and the outer edge boundary line 332 in the first direction x is larger at the end portion closer to the outer edge boundary line 331 than at the center in the second direction y. The outer edge boundary line second portion 332B is also connected to the outer edge boundary line second portion 331B. 33, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between the second outer edge boundary portion 331B and the second outer edge boundary portion 332B. As a result, the corners of the outer edge boundary 331 and the outer edge boundary 332 (the second outer edge boundary portion 331B and the second outer edge boundary portion 332B) protrude outward in both the first direction x and the second direction y.

[0112] Although detailed illustrations are omitted, the end of the outer boundary 331 closer to the outer boundary 333, like the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B), forms part of a polygon (pentagon) and is located on the outside in the second direction y. Also, the end of the outer boundary 333 closer to the outer boundary 331, like the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B), forms part of a polygon (pentagon) and is located on the outside in the first direction x. As a result, like the corners of the outer boundary 331 and the outer boundary 333, like the corners of the outer boundary 331 and the outer boundary 332, have a shape that protrudes outward in both the first direction x and the second direction y.

[0113] Although detailed illustrations will be omitted, the end of the outer boundary 334 closer to the outer boundary 333, like the end of the outer boundary 331 closer to the outer boundary 332 (outer boundary second part 331B), forms part of a polygon (pentagon) and is located on the outside in the second direction y. Also, the end of the outer boundary 333 closer to the outer boundary 334, like the end of the outer boundary 332 closer to the outer boundary 331 (outer boundary second part 332B), forms part of a polygon (pentagon) and is located on the outside in the first direction x. As a result, like the corners of the outer boundary 333 and the outer boundary 334, like the corners of the outer boundary 331 and the outer boundary 332, have a shape that protrudes outward in both the first direction x and the second direction y.

[0114] 34, the inner end boundary line 345 includes an inner end boundary line first portion 345A and an inner end boundary line second portion 345B, but the configuration of the inner end boundary line second portion 345B is different from that of the above embodiment. In this modification, the inner end boundary line second portion 345B forms a part of a polygon (a pentagon in the illustrated example), is connected to the linear inner end boundary line first portion 345A, and is located inside the inner end boundary line first portion 345A in the second direction y. Therefore, with respect to the inner end boundary line 325 of the first annular portion 310 and the inner end boundary line 345 of the second annular portion 330, the distance (third distance D3) between the inner end boundary line 325 and the inner end boundary line 345 in the second direction y is set to be larger at the end portion closer to the inner end boundary line 346 than at the center in the first direction x.

[0115] The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line second portion 346B, but the configuration of the inner end boundary line second portion 346B is different from that of the above embodiment. In this modification, the inner end boundary line second portion 346B forms a part of a polygon (a pentagon in the illustrated example), is connected to the linear inner end boundary line first portion 346A, and is located inside the inner end boundary line first portion 346A in the first direction x. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, the distance (fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is larger at the end portion closer to the inner end boundary line 345 than at the center in the second direction y. The inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. 34, the two-dot chain line inclined at an angle of 45° with respect to the first direction x and the second direction y represents the boundary between inner end boundary line second portion 345B and inner end boundary line second portion 346B. As a result, the corners of inner end boundary line 3435 and inner end boundary line 346 (inner end boundary line second portion 345B and inner end boundary line second portion 346B) have a shape that protrudes inward in both the first direction x and the second direction y.

[0116] In the manufacturing method of the semiconductor device of this modification, in the step of forming the second insulating layer 33, the second annular portion 330 is arranged overlapping the first annular portion 310, and the distance (first distance D1) between the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330 in the second direction y is larger at an end closer to the outer end boundary line 332 than at the center in the first direction x. Also, the distance (second distance D2) between the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 in the first direction x is larger at an end closer to the outer end boundary line 331 than at the center in the second direction y. As a result, the volume of the second annular portion 330 is made larger outside the corners of the outer end boundary line 331 and the outer end boundary line 332 than at other portions. According to this configuration, even if the second annular portion 330 shrinks at the corners of the outer end boundary line 331 and the outer end boundary line 332 after the heat treatment of the second annular portion 330, the state in which the second annular portion 330 covers the first insulating layer 31 (first annular portion 310) which is the underlying layer can be maintained, and the first insulating layer 31 can be prevented from being exposed. Therefore, the influence of shrinkage of the second annular portion 330 (second insulating layer 33) which is the resin material portion can be suppressed. In addition, within the scope of the same configuration as the above embodiment, the same action and effect as the above embodiment can be achieved.

[0117] <Third Modification of First Embodiment> 35 shows a semiconductor element in a semiconductor device according to a third modification of the first embodiment. In this modification, the configurations of the first insulating layer 31 (first annular portion 310) and the second insulating layer 33 (second annular portion 330) are different from those of the above embodiment.

[0118] In the first annular portion 310, the shapes of the ends of the outer boundary lines 311 to 314 and the inner boundary lines 325 and 326 are different from those in the above embodiment. As shown in FIG. 35 and FIG. 36, the outer boundary line 311 includes an outer boundary line first portion 311A ​​and an outer boundary line second portion 311B. The outer boundary line first portion 311A ​​extends linearly along the first direction x and occupies most of the outer boundary line 311 except for the end portion. The outer boundary line second portion 311B is connected to the outer boundary line first portion 311A ​​and is located closer to the outer boundary line 312 in the first direction x. The outer boundary line second portion 311B is located inside the outer boundary line first portion 311A ​​in the second direction y. In the illustrated example, the outer boundary line second portion 311B is inclined at an angle of 45° with respect to the outer boundary line first portion 311A ​​as viewed in the thickness direction z.

[0119] The outer boundary line 312 includes an outer boundary line first portion 312A and an outer boundary line second portion 312B. The outer boundary line first portion 312A extends linearly along the second direction y and occupies most of the outer boundary line 312 except for the end portion. The outer boundary line second portion 312B is connected to the outer boundary line first portion 312A and is located closer to the outer boundary line 311 in the second direction y. The outer boundary line second portion 312B is located inside the outer boundary line first portion 312A in the first direction x. The outer boundary line second portion 312B is also connected to the outer boundary line second portion 311B. In the illustrated example, the outer boundary line second portion 312B is inclined at an angle of 45° with respect to the outer boundary line first portion 311A ​​as viewed in the thickness direction z. In Fig. 36, the two-dot chain line perpendicular to the outer edge boundary second part 311B and the outer edge boundary second part 312B represents the boundary between the outer edge boundary second part 311B and the outer edge boundary second part 312B. With this configuration, the corners of the outer edge boundary 311 and the outer edge boundary 312 (the outer edge boundary second part 311B and the outer edge boundary second part 312B) are shaped to inwardly in both the first direction x and the second direction y. Note that in Figs. 39 and 42 described below, similarly to Fig. 36, the two-dot chain line perpendicular to the outer edge boundary second part 311B and the outer edge boundary second part 312B represents the boundary between the outer edge boundary second part 311B and the outer edge boundary second part 312B.

[0120] Although detailed illustrations will be omitted, the end of the outer edge boundary 311 closer to the outer edge boundary 313 is located on the inside in the second direction y, similar to the end of the outer edge boundary 311 closer to the outer edge boundary 312 (outer edge boundary second part 311B). Furthermore, the end of the outer edge boundary 313 closer to the outer edge boundary 311 is located on the inside in the first direction x, similar to the end of the outer edge boundary 312 closer to the outer edge boundary 311 (outer edge boundary second part 312B). As a result, the corners of the outer edge boundary 311 and the outer edge boundary 313 (the upper left corners in FIG. 35) are shaped to inwardly inward in both the first direction x and the second direction y, similar to the corners of the outer edge boundary 311 and the outer edge boundary 312.

[0121] Although detailed illustrations will be omitted, the end of the outer edge boundary 314 closer to the outer edge boundary 313 is located on the inside in the second direction y, similar to the end of the outer edge boundary 311 closer to the outer edge boundary 312 (outer edge boundary second part 311B). Furthermore, the end of the outer edge boundary 313 closer to the outer edge boundary 314 is located on the inside in the first direction x, similar to the end of the outer edge boundary 312 closer to the outer edge boundary 311 (outer edge boundary second part 312B). As a result, the corners of the outer edge boundary 313 and the outer edge boundary 314 (the lower left corners in FIG. 35) are shaped to inwardly inward in both the first direction x and the second direction y, similar to the corners of the outer edge boundary 311 and the outer edge boundary 312.

[0122] As shown in Figs. 35 and 37, the inner end boundary line 325 includes an inner end boundary line first portion 325A and an inner end boundary line second portion 325B. The inner end boundary line first portion 325A extends linearly along the first direction x and occupies most of the inner end boundary line 325 except for the end portion. The inner end boundary line second portion 325B is connected to the inner end boundary line first portion 325A and is located closer to the inner end boundary line 326 in the first direction x. The inner end boundary line 325B is located outside the inner end boundary line first portion 325A in the second direction y. In the illustrated example, the inner end boundary line second portion 325B is inclined at an angle of 45° with respect to the inner end boundary line first portion 325A as viewed in the thickness direction z.

[0123] The inner end boundary line 326 includes an inner end boundary line first portion 326A and an inner end boundary line second portion 326B. The inner end boundary line first portion 326A extends linearly along the second direction y and occupies most of the inner end boundary line 326 except for the end portion. The inner end boundary line second portion 326B is connected to the inner end boundary line first portion 326A and is located closer to the inner end boundary line 325 in the second direction y. The inner end boundary line second portion 326B is located outside the inner end boundary line first portion 326A in the first direction x. The inner end boundary line second portion 326B is also connected to the inner end boundary line second portion 325B. In the illustrated example, the inner end boundary line second portion 326B is inclined at an angle of 45° with respect to the inner end boundary line first portion 326A when viewed in the thickness direction z. In Fig. 37, the two-dot chain line perpendicular to the inner end boundary line second part 325B and the inner end boundary line second part 326B represents the boundary between the inner end boundary line second part 325B and the inner end boundary line second part 326B. With this configuration, the corners of the inner end boundary line 325 and the inner end boundary line 326 (the inner end boundary line second part 325B and the inner end boundary line second part 326B) are shaped to indent outward in both the first direction x and the second direction y. Note that in Figs. 40 and 43 described below, similarly to Fig. 37, the two-dot chain line perpendicular to the inner end boundary line second part 325B and the inner end boundary line second part 326B represents the boundary between the inner end boundary line second part 325B and the inner end boundary line second part 326B.

[0124] As shown in Fig. 35, in the second annular portion 330, the outer end boundary lines 331-336 and the inner end boundary lines 341-346 each extend in a substantially straight line. As shown in Fig. 35 and Fig. 36, the corners of the outer end boundary line 331 and the outer end boundary line 332, the corners of the outer end boundary line 331 and the outer end boundary line 333, and the corners of the outer end boundary line 333 and the outer end boundary line 334 are connected with rounded corners when viewed in the thickness direction z. As shown in Fig. 35 and Fig. 37, the corners of the inner end boundary line 345 and the inner end boundary line 346 are connected with rounded corners when viewed in the thickness direction z.

[0125] In this modification, in the process of forming the first insulating layer 31 and the process of forming the second insulating layer 33 during manufacturing of the semiconductor device, the shape of the first annular portion 310 and the shape of the second annular portion 330 are different from those in the above embodiment.

[0126] 38 shows the first annular portion 310 arranged on the main surface 201' side of the substrate 2' in the process of forming the first insulating layer 31. The first annular portion 310 differs from the configuration shown in FIG. 13 in the shapes of the corners of the outer boundary line 311 and the outer boundary line 312 (upper right corner in FIG. 38), the corners of the outer boundary line 311 and the outer boundary line 313 (upper left corner in FIG. 38), the corners of the outer boundary line 313 and the outer boundary line 314 (lower left corner in FIG. 38), and the corners of the inner boundary line 325 and the inner boundary line 326. The shapes of the corners of the first annular portion 310 shown in FIG. 38 to FIG. 40 (corners of the outer boundary line 311 and the outer boundary line 313, corners of the inner boundary line 325 and the inner boundary line 326, etc.) are similar to the shapes of the corners of the first annular portion 310 described with reference to FIG. 35 to FIG. 37.

[0127] 41 shows the second annular portion 330 arranged on the substrate 2' by the step of arranging the second annular portion 330 in the process of forming the second insulating layer 33. In this modification, the shape of the second annular portion 330 arranged on the substrate 2' is different from that of the above embodiment. More specifically, in the second annular portion 330 arranged on the main surface 201' side of the substrate 2', the shapes of the corners of the outer end boundary line 331 and the outer end boundary line 332 (upper right corner in FIG. 41), the corners of the outer end boundary line 331 and the outer end boundary line 333 (upper left corner in FIG. 41), the corners of the outer end boundary line 333 and the outer end boundary line 334 (lower left corner in FIG. 41), and the corners of the inner end boundary line 345 and the inner end boundary line 346 are different from the configuration shown in FIG. 15.

[0128] As shown in Figs. 41 and 42, the outer boundary lines 331 to 336 each extend linearly. As shown in Figs. 41 and 43, the inner boundary lines 341 to 346 each extend linearly. The boundaries (straight lines) constituting the corners of the outer boundary line 331 and the outer boundary line 332, the corners of the outer boundary line 331 and the outer boundary line 333, the corners of the outer boundary line 333 and the outer boundary line 334, and the corners of the inner boundary line 345 and the inner boundary line 346 are connected at right angles. Therefore, as shown in Fig. 42, with respect to the outer boundary line 311 of the first annular portion 310 and the outer boundary line 331 of the second annular portion 330, the distance (first distance D1) between the outer boundary line 311 and the outer boundary line 331 in the second direction y is larger at the end closer to the outer boundary line 332 than at the center in the first direction x. With respect to the outer end boundary line 312 and the outer end boundary line 332, the distance (second distance D2) between the outer end boundary line 312 and the outer end boundary line 332 in the first direction x is greater at an end closer to the outer end boundary line 331 than at the center in the second direction y. Also, as shown in Fig. 43, with respect to the inner end boundary line 325 of the first annular portion 310 and the inner end boundary line 345 of the second annular portion 330, the distance (third distance D3) between the inner end boundary line 325 and the inner end boundary line 345 in the second direction y is greater at an end closer to the inner end boundary line 346 than at the center in the first direction x. With respect to the inner end boundary line 326 and the inner end boundary line 346, the distance (fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is greater at an end closer to the inner end boundary line 345 than at the center in the second direction y.

[0129] According to the manufacturing method of the semiconductor device of this modification, even if the second annular portion 330 shrinks at the corners of the outer boundary line 331 and the outer boundary line 332 after the heat treatment of the second annular portion 330, the state of covering the first insulating layer 31 (first annular portion 310) which is the underlying layer can be maintained, and the first insulating layer 31 can be prevented from being exposed (see FIGS. 36 and 37). Therefore, it is possible to suppress the influence of shrinkage of the second annular portion 330 (second insulating layer 33) which is a resin material portion. In addition, within the scope of the same configuration as the above embodiment, the same action and effect as the above embodiment can be achieved.

[0130] The semiconductor device and the manufacturing method of the semiconductor device according to the present disclosure are not limited to the above-mentioned embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure and the specific processing of each step of the manufacturing method of the semiconductor device according to the present disclosure can be freely designed in various ways.

[0131] The present disclosure includes configurations related to the following notes.

[0132] [Appendix 1] A semiconductor element (2) having an element body (20) having an element main surface (201) facing one side in a thickness direction (z) and a first electrode (21) arranged on the first element main surface (201); a first insulating layer (31) disposed across a peripheral edge portion of the first electrode (21) and the element main surface (201) and having a first annular portion (310) having an annular shape when viewed in the thickness direction (z); a second insulating layer (33) laminated on the first insulating layer (31), made of a resin material, and having a second annular portion (330) overlapping the first annular portion (310) when viewed in the thickness direction (z), the first annular portion (310) has a first outer end boundary line (311) extending in a first direction (x) perpendicular to the thickness direction (z), and a second outer end boundary line (312) connected to the first outer end boundary line (311) and extending in a second direction (y) perpendicular to both the thickness direction (z) and the first direction (x), the second annular portion (330) has, as viewed in the thickness direction (z), a third outer end boundary line (331) located outside the first outer end boundary line (311) in the second direction (y), and a fourth outer end boundary line (332) located outside the second outer end boundary line (312) in the first direction (z); The third outer boundary line (331) has an end portion closer to the fourth outer boundary line (332) than the center in the first direction (x) that protrudes outward in the second direction (y), The fourth outer boundary line (332) has an end portion closer to the third outer boundary line (331) than a center in the second direction (y) that protrudes outward in the first direction (x). [Appendix 2] the first annular portion (310) has, as viewed in the thickness direction (z), a first inner end boundary line (321) located on the inside of the first outer end boundary line (311) in the second direction (y), and a second inner end boundary line (322) connected to the first inner end boundary line (321) and located on the inside of the second outer end boundary line (312) in the first direction (x); The semiconductor device described in Appendix 1, wherein the second annular portion (330) has, when viewed in the thickness direction (z), a third inner end boundary line (341) located inside the first inner end boundary line (321) in the second direction (y), and a fourth inner end boundary line (342) connected to the third inner end boundary line (341) and located inside the second inner end boundary line (322) in the first direction (x). [Appendix 3] the first annular portion (310) has a fifth inner end boundary line (325) that is connected to the second inner end boundary line (322), is located inside the second inner end boundary line (322) in the first direction (x) when viewed in the thickness direction (z), and extends in the first direction (x), and a sixth inner end boundary line (326) that is connected to the fifth inner end boundary line (325), is located on the opposite side of the fifth inner end boundary line (325) to the first inner end boundary line (321) in the second direction (y), and extends in the second direction (y); the second annular portion (330) has a seventh inner end boundary line (345) that is connected to the fourth inner end boundary line (342) and is positioned inside the fifth inner end boundary line (325) in the second direction (y) as viewed in the thickness direction (z), and an eighth inner end boundary line (346) that is positioned inside the sixth inner end boundary line (326) in the first direction (x) as viewed in the thickness direction (z), an end portion of the seventh inner end boundary line (345) closer to the eighth inner end boundary line (346) than the center in the first direction (x) protrudes inward in the second direction (y); The semiconductor device of claim 2, wherein the eighth inner boundary line (346) has an end portion closer to the seventh inner boundary line (345) than the center in the second direction (y) that protrudes inward in the first direction (x). [Appendix 4] the first annular portion (310) has, when viewed in the thickness direction (z), a fifth outer end boundary line (315) located outside the fifth inner end boundary line (325) in the second direction (y), and a sixth outer end boundary line (316) connected to the fifth outer end boundary line (315) and located outside the sixth inner end boundary line (326) in the first direction (x); The semiconductor device of Appendix 3, wherein the second annular portion (330) has, when viewed in the thickness direction (z), a seventh outer end boundary line (335) located outside the fifth outer end boundary line (315) in the second direction (y), and an eighth outer end boundary line (336) connected to the seventh outer end boundary line (335) and located outside the sixth outer end boundary line (316) in the second direction (y). [Appendix 5] 5. The semiconductor device according to any one of claims 1 to 4, wherein the second insulating layer (33) has a thickness greater than a thickness of the first insulating layer (31). [Appendix 6] 6. The semiconductor device according to claim 1, wherein the second insulating layer (33) is made of a polyimide resin. [Appendix 7] A step of preparing a substrate (2') having a semiconductor layer (20') having a main surface (201') facing one side in a thickness direction (z) and a first electrode (21) disposed on the main surface (201'); forming a first insulating layer (31) on the main surface (201') of the substrate (2'); forming a second insulating layer (33) on the main surface (201') of the substrate (2'); In the step of forming the first insulating layer (31), a first annular portion (310) is formed that is disposed across the peripheral portion (211) of the first electrode (21) and the main surface (201') and has an annular shape when viewed in the thickness direction (z), the step of forming the second insulating layer (33) includes a step of disposing a second annular portion (330) made of a resin material and having an annular shape overlapping the first annular portion (310) when viewed in the thickness direction (z), and a step of heating the second annular portion (330); the first annular portion (310) has a first outer end boundary line (311) extending in a first direction (x) perpendicular to the thickness direction (z), and a second outer end boundary line (312) connected to the first outer end boundary line (311) and extending in a second direction (y) perpendicular to both the thickness direction (z) and the first direction (x), the second annular portion (330) has, as viewed in the thickness direction (z), a third outer end boundary line (331) located outside the first outer end boundary line (311) in the second direction (y), and a fourth outer end boundary line (332) located outside the second outer end boundary line (312) in the first direction, a first distance (D1) which is a distance in the second direction (y) between the first outer boundary line (311) and the third outer boundary line (331) is larger at an end portion closer to the fourth outer boundary line (332) than at a center in the first direction (x); a second distance (D2), which is the distance in the first direction (x) between the second outer boundary line (312) and the fourth outer boundary line (332), is larger at the end closer to the third outer boundary line (331) than at the center in the second direction (y). [Appendix 8] the third outer end boundary line (331) includes a third outer end boundary line first portion (331A) extending linearly along the first direction (x), and a third outer end boundary line second portion (331B) connected to the third outer end boundary line first portion (331A) and positioned outside the third outer end boundary line first portion (331A) in the second direction (y) and closer to the fourth outer end boundary line (332) in the first direction (x); The method for manufacturing a semiconductor device described in Appendix 7, wherein the fourth outer boundary line (332) includes a fourth outer boundary line first portion (332A) extending in a straight line along the second direction (y), and a fourth outer boundary line second portion (332B) that is connected to both the fourth outer boundary line first portion (332A) and the third outer boundary line second portion (331B) and is positioned outside the fourth outer boundary line first portion (332A) in the first direction (x). [Appendix 9] the third outer end boundary line second portion (331B) has a third outer end boundary line straight portion (331c) extending linearly along the first direction (x), and a third outer end boundary line connecting portion (331d) connecting to both the third outer end boundary line first portion (331A) and the third outer end boundary line straight portion (331c), The method for manufacturing a semiconductor device described in Appendix 8, wherein the fourth outer end boundary line second portion (332B) has a fourth outer end boundary line straight portion (332c) that is connected to the third outer end boundary line straight portion (331c) and extends in a straight line along the second direction (y), and a fourth outer end boundary line connecting portion (332d) that is connected to both the fourth outer end boundary line first portion (332A) and the fourth outer end boundary line straight portion (332c). [Appendix 10] the first outer end boundary line (311) includes a first outer end boundary line first portion (311A) extending linearly along the first direction (x), and a first outer end boundary line second portion (311B) connected to the first outer end boundary line first portion (311A) and positioned inside the first outer end boundary line first portion (311A) in the second direction (y) and closer to the second outer end boundary line (312) in the first direction (x); The method for manufacturing a semiconductor device described in Appendix 7, wherein the second outer boundary line (312) includes a second outer boundary line first portion (312A) extending in a straight line along the second direction (y), and a second outer boundary line second portion (312B) that is connected to both the second outer boundary line first portion (312A) and the first outer boundary line second portion (311B) and is located inside the second outer boundary line first portion (312A) in the first direction (x). [Appendix 11] the first annular portion (310) has, as viewed in the thickness direction (z), a first inner end boundary line (321) located on the inside of the first outer end boundary line (311) in the second direction (y), and a second inner end boundary line (322) connected to the first inner end boundary line (321) and located on the inside of the second outer end boundary line (312) in the first direction (x); A method for manufacturing a semiconductor device according to any one of Appendices 7 to 10, wherein the second annular portion (330) has, when viewed in the thickness direction (z), a third inner end boundary line (341) located inside the first inner end boundary line (321) in the second direction (y), and a fourth inner end boundary line (342) connected to the third inner end boundary line (341) and located inside the second inner end boundary line (322) in the first direction (x). [Appendix 12] the first annular portion (310) has a fifth inner end boundary line (325) that is connected to the second inner end boundary line (322), is located inside the second inner end boundary line (322) in the first direction (x) when viewed in the thickness direction (z), and extends in the first direction (x), and a sixth inner end boundary line (326) that is connected to the fifth inner end boundary line (325), is located on the opposite side of the fifth inner end boundary line (325) to the first inner end boundary line (321) in the second direction (y), and extends in the second direction (y); the second annular portion (330) has a seventh inner end boundary line (345) that is connected to the fourth inner end boundary line (342) and is positioned inside the fifth inner end boundary line (325) in the second direction (y) as viewed in the thickness direction (z), and an eighth inner end boundary line (346) that is positioned inside the sixth inner end boundary line (326) in the first direction (x) as viewed in the thickness direction (z), a third distance (D3) which is a distance in the second direction (y) between the fifth inner end boundary line (325) and the seventh inner end boundary line (345) is larger at an end portion closer to the eighth inner end boundary line (346) than at a center in the first direction (x), A method for manufacturing a semiconductor device as described in Appendix 11, wherein a fourth distance (D4), which is the distance in the first direction (x) between the sixth inner end boundary line (326) and the eighth inner end boundary line (346), is larger at the end closer to the seventh inner end boundary line (345) than at the center in the second direction (y). [Appendix 13] the seventh inner end boundary line (345) includes a seventh inner end boundary line first portion (345A) extending linearly along the first direction (x), and a seventh inner end boundary line second portion (345B) connected to the seventh inner end boundary line first portion (345A) and positioned inside the seventh inner end boundary line first portion (345A) in the second direction (y) and closer to the eighth inner end boundary line (346) in the first direction (x), The method for manufacturing a semiconductor device described in Appendix 12, wherein the 8th inner end boundary line (346) includes an 8th inner end boundary line first portion (346A) extending in a straight line along the second direction (y), and an 8th inner end boundary line second portion (346B) that is connected to both the 8th inner end boundary line first portion (346A) and the 7th inner end boundary line second portion (345B) and is positioned inside the 8th inner end boundary line first portion (346A) in the first direction (x). [Appendix 14] the seventh inner end boundary line second portion (345B) has a seventh inner end boundary line straight portion (345c) extending linearly along the first direction (x), and a seventh inner end boundary line connecting portion (345d) connected to both the seventh inner end boundary line first portion (345A) and the seventh inner end boundary line straight portion (345c), A method for manufacturing a semiconductor device as described in Appendix 13, wherein the 8th inner end boundary line second portion (346B) has an 8th inner end boundary line straight portion (346c) that is connected to the 7th inner end boundary line straight portion (345c) and extends in a straight line along the second direction (y), and an 8th inner end boundary line connecting portion (346d) that is connected to both the 8th inner end boundary line first portion (346A) and the 8th inner end boundary line straight portion (346c). [Appendix 15] the fifth inner end boundary line (325) includes a fifth inner end boundary line first portion (325A) extending linearly along the first direction (x), and a fifth inner end boundary line second portion (325B) connected to the fifth inner end boundary line first portion (325A) and positioned outside the fifth inner end boundary line first portion (325A) in the second direction (y) and closer to the sixth inner end boundary line (326) in the first direction (x), The method for manufacturing a semiconductor device described in Appendix 12, wherein the sixth inner end boundary line (326) includes a sixth inner end boundary line first portion (326A) extending in a straight line along the second direction (y), and a sixth inner end boundary line second portion (326B) that is connected to both the sixth inner / outer end boundary line first portion (326A) and the fifth inner end boundary line second portion (325B) and is positioned outside the sixth inner end boundary line first portion (326A) in the first direction (x). [Appendix 16] the first annular portion (310) has, when viewed in the thickness direction (z), a fifth outer end boundary line (315) located outside the fifth inner end boundary line (325) in the second direction (y), and a sixth outer end boundary line (316) connected to the fifth outer end boundary line (315) and located outside the sixth inner end boundary line (326) in the first direction (x); A method for manufacturing a semiconductor device according to any one of Appendices 12 to 15, wherein the second annular portion (330) has, when viewed in the thickness direction (z), a seventh outer boundary line (335) located outside the fifth outer boundary line (315) in the second direction (y), and an eighth outer boundary line (336) connected to the seventh outer boundary line (335) and located outside the sixth outer boundary line (316) in the second direction (y). [Appendix 17] 17. The method for manufacturing a semiconductor device according to any one of claims 7 to 16, wherein the second insulating layer (33) has a thickness greater than a thickness of the first insulating layer (31). [Appendix 18] 18. The method for manufacturing a semiconductor device according to any one of claims 7 to 17, wherein the second insulating layer (33) is made of a polyimide resin. [Explanation of symbols]

[0133] A10: Semiconductor device 10: Substrate 11: 1st metal layer 1A: 1st lead 1B: 2nd lead 1C: 3rd lead 11: Element bonding section 111: Element mounting surface 112: Back mounting part 12:Terminal-shaped extension part 13: Bonding section 14:Terminal section 141: Back mounting part 15: Bend 16: Wire bonding section 17:Terminal section 171: Back mounting part 18: Bend 2: Semiconductor elements 2': Substrate 20: Element body 20': Semiconductor layer 201: Element main surface 201': Main surface 202: Back side of element 21: 1st electrode 211: Periphery 212: First electrode pad portion 22: 2nd electrode 23:Third electrode 3: Insulation section 301: Outer edge 302: Inner edge 31: First insulating layer 310: First annular section 311: Outer edge boundary line (first outer edge boundary line) 311A: Outer edge boundary line 1st part (1st outer edge boundary line 1st part) 311B: Outer edge boundary line 2nd part (1st outer edge boundary line 2nd part) 312:Outer edge boundary line (second outer edge boundary line) 312A: Outer edge boundary line part 1 (second outer edge boundary line part 1) 312B: Outer edge boundary line 2nd part (2nd outer edge boundary line 2nd part) 313: Outer edge boundary line (second outer edge boundary line) 314:Outer edge boundary line (first outer edge boundary line) 315: Outer edge boundary line (5th outer edge boundary line) 316: Outer edge boundary line (6th outer edge boundary line) 321: Inner boundary line (first inner boundary line) 322: Inner boundary line (second inner boundary line) 323: Inner boundary line (third inner boundary line) 324: Inner boundary line (first inner boundary line) 325: Inner boundary line (5th inner boundary line) 325A: Inner edge boundary line part 1 (5th inner edge boundary line part 1) 325B: Inner edge boundary line 2nd part (5th inner edge boundary line 2nd part) 326: Inner boundary line (6th inner boundary line) 326A: Inner edge boundary line part 1 (6th inner edge boundary line part 1) 326B: Inner edge boundary line 2nd part (6th inner edge boundary line 2nd part) 33: Second insulating layer 330: Second annular section 331: Outer edge boundary line (third outer edge boundary line) 331A: Outer edge boundary line 1st part (3rd outer edge boundary line 1st part) 331B: Outer edge boundary line 2nd part (3rd outer edge boundary line 2nd part) 331c: Outer edge boundary line straight part (3rd outer edge boundary line straight part) 331d: Outer boundary line connection (third outer boundary line connection) 331E: Outer edge border overhang 332: Outer edge boundary line (4th outer edge boundary line) 332A: Outer edge boundary line 1st part (4th outer edge boundary line 1st part) 332B: Outer edge boundary line 2nd part (4th outer edge boundary line 2nd part) 332c: Outer edge straight line part (4th outer edge straight line part) 332d: Outer boundary line connection (fourth outer boundary line connection) 332E: Outer edge border overhang 333:Outer edge boundary line (4th outer edge boundary line) 334:Outer edge boundary line (third outer edge boundary line) 335: Outer edge boundary line (7th outer edge boundary line) 336: Outer edge boundary line (8th outer edge boundary line) 341: Inner boundary line (third inner boundary line) 342: Inner boundary line (fourth inner boundary line) 343: Inner boundary line (fourth inner boundary line) 344: Inner boundary line (third inner boundary line) 345: Inner boundary line (7th inner boundary line) 345A: Inner edge boundary line part 1 (7th inner edge boundary line part 1) 345B: Inner edge boundary line part 2 (7th inner edge boundary line part 2) 345c: Inner edge straight line part (7th inner edge straight line part) 345d: Inner end boundary line connection (7th inner end boundary line connection) 345E: Inner boundary line overhang 346: Inner boundary line (8th inner boundary line) 346A: Inner edge boundary line 1st part (8th inner edge boundary line 1st part) 346B: Inner edge boundary line 2nd part (8th inner edge boundary line 2nd part) 346c: Inner edge straight line part (8th inner edge straight line part) 346d: Inner end boundary line connection (8th inner end boundary line connection) 346E: Inner edge border overhang 4: Metal laminated section 41: 1st metal layer 41': 1st metal layer material 411: 1st extension part 412: First edge 42: 2nd metal layer 42': 2nd metal layer material 421:Second extension part 421' : Edge 422: Second edge 43:Third metal layer 43': Third metal layer material 431: Third edge 431' : Edge 5: Conductive material 51: Element side joint 511:Protrusion 512: Recess 52: Lead side joint 53: Middle section 61: First conductive adhesive material 62: Second conductive adhesive 63: Third conductive adhesive 65: Wire 7: Sealing resin 71: Main surface of sealing resin 72: Sealing resin back side 73: Sealing resin side 8: Resist 81 :Aperture D1: First distance D2: 2nd distance D3: Third distance D4: 4th distance L1: First dimension L2: Second dimension L3: Third dimension x :1st direction y : second direction z: thickness direction

Claims

1. a semiconductor element having an element body having an element main surface facing one side in a thickness direction, and a first electrode disposed on the element main surface; a first insulating layer having a first annular portion disposed across a peripheral portion of the first electrode and the main surface of the element and having a ring shape when viewed in the thickness direction; a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and has a second annular portion that overlaps with the first annular portion when viewed in the thickness direction; the first annular portion has a first outer boundary line extending in a first direction perpendicular to the thickness direction, and a second outer boundary line connected to the first outer boundary line and extending in a second direction perpendicular to both the thickness direction and the first direction, the second annular portion has, when viewed in the thickness direction, a third outer end boundary line located outside the first outer end boundary line in the second direction, and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, an end portion of the third outer boundary line that is closer to the fourth outer boundary line than a center in the first direction protrudes outward in the second direction; an end portion of the fourth outer boundary line that is closer to the third outer boundary line than a center in the second direction protrudes outward in the first direction; the first annular portion has, as viewed in the thickness direction, a first inner end boundary line located inside the first outer end boundary line in the second direction, and a second inner end boundary line connected to the first inner end boundary line and located inside the second outer end boundary line in the first direction, the second annular portion has, as viewed in the thickness direction, a third inner end boundary line located inside the first inner end boundary line in the second direction, and a fourth inner end boundary line connected to the third inner end boundary line and located inside the second inner end boundary line in the first direction, the first annular portion has a fifth inner end boundary line connected to the second inner end boundary line, located inside the second inner end boundary line in the first direction when viewed in the thickness direction, and extending in the first direction, and a sixth inner end boundary line connected to the fifth inner end boundary line, located on the opposite side of the first inner end boundary line with respect to the fifth inner end boundary line in the second direction, and extending in the second direction, the second annular portion has a seventh inner end boundary line that is connected to the fourth inner end boundary line and is located inside the fifth inner end boundary line in the second direction as viewed in the thickness direction, and an eighth inner end boundary line that is located inside the sixth inner end boundary line in the first direction as viewed in the thickness direction, an end portion of the seventh inner boundary line closer to the eighth inner boundary line than a center in the first direction protrudes inward in the second direction, The eighth inner boundary line has an end portion closer to the seventh inner boundary line than a center in the second direction, the end portion protruding inward in the first direction.

2. the first annular portion has, when viewed in the thickness direction, a fifth outer end boundary line located outwardly of the fifth inner end boundary line in the second direction, and a sixth outer end boundary line connected to the fifth outer end boundary line and located outwardly of the sixth inner end boundary line in the first direction, 2. The semiconductor device of claim 1, wherein the second annular portion has, when viewed in the thickness direction, a seventh outer boundary line located outside the fifth outer boundary line in the second direction, and an eighth outer boundary line connected to the seventh outer boundary line and located outside the sixth outer boundary line in the second direction.

3. 3. The semiconductor device according to claim 1, wherein the second insulating layer has a thickness greater than a thickness of the first insulating layer.

4. 4. The semiconductor device according to claim 1, wherein said second insulating layer is made of a polyimide resin.

5. preparing a substrate having a semiconductor layer having a main surface facing one side in a thickness direction and a first electrode disposed on the main surface; forming a first insulating layer on the main surface side of the substrate; forming a second insulating layer on the main surface side of the substrate; In the step of forming the first insulating layer, a first annular portion is formed, the first annular portion being disposed across a peripheral portion of the first electrode and the main surface and having a ring shape when viewed in the thickness direction; the step of forming the second insulating layer includes a step of disposing a second annular portion made of a resin material and having an annular shape overlapping the first annular portion when viewed in the thickness direction; and a step of heating the second annular portion, the first annular portion has a first outer boundary line extending in a first direction perpendicular to the thickness direction, and a second outer boundary line connected to the first outer boundary line and extending in a second direction perpendicular to both the thickness direction and the first direction, the second annular portion has, when viewed in the thickness direction, a third outer end boundary line located outside the first outer end boundary line in the second direction, and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, a first distance, which is a distance in the second direction between the first outer boundary line and the third outer boundary line, is larger at an end portion closer to the fourth outer boundary line than at a center in the first direction; a second distance, which is a distance in the first direction between the second outer boundary line and the fourth outer boundary line, is larger at an end portion closer to the third outer boundary line than at a center in the second direction; the first annular portion has, as viewed in the thickness direction, a first inner end boundary line located inside the first outer end boundary line in the second direction, and a second inner end boundary line connected to the first inner end boundary line and located inside the second outer end boundary line in the first direction, the second annular portion has, as viewed in the thickness direction, a third inner end boundary line located inside the first inner end boundary line in the second direction, and a fourth inner end boundary line connected to the third inner end boundary line and located inside the second inner end boundary line in the first direction, the first annular portion has a fifth inner end boundary line connected to the second inner end boundary line, located inside the second inner end boundary line in the first direction when viewed in the thickness direction, and extending in the first direction, and a sixth inner end boundary line connected to the fifth inner end boundary line, located on the opposite side of the first inner end boundary line with respect to the fifth inner end boundary line in the second direction, and extending in the second direction, the second annular portion has a seventh inner end boundary line that is connected to the fourth inner end boundary line and is located inside the fifth inner end boundary line in the second direction as viewed in the thickness direction, and an eighth inner end boundary line that is located inside the sixth inner end boundary line in the first direction as viewed in the thickness direction, a third distance which is a distance in the second direction between the fifth inner end boundary line and the seventh inner end boundary line is larger at an end portion closer to the eighth inner end boundary line than at a center in the first direction, A method for manufacturing a semiconductor device, wherein a fourth distance, which is the distance in the first direction between the sixth inner end boundary line and the eighth inner end boundary line, is larger at the end closer to the seventh inner end boundary line than at the center in the second direction.

6. the third outer end boundary line includes a third outer end boundary line first portion that extends linearly along the first direction, and a third outer end boundary line second portion that is connected to the third outer end boundary line first portion and is located outside the third outer end boundary line first portion in the second direction and closer to the fourth outer end boundary line in the first direction, 6. The method for manufacturing a semiconductor device according to claim 5, wherein the fourth outer boundary line includes a fourth outer boundary line first portion extending linearly along the second direction, and a fourth outer boundary line second portion connected to both the fourth outer boundary line first portion and the third outer boundary line second portion and positioned outside the fourth outer boundary line first portion in the first direction.

7. the third outer end boundary line second portion has a third outer end boundary line straight portion that extends linearly along the first direction, and a third outer end boundary line connecting portion that is connected to both the third outer end boundary line first portion and the third outer end boundary line straight portion, 7. The method for manufacturing a semiconductor device according to claim 6, wherein the fourth outer boundary line second portion has a fourth outer boundary line straight portion that is connected to the third outer boundary line portion and extends linearly along the second direction, and a fourth outer boundary line connecting portion that is connected to both the fourth outer boundary line first portion and the fourth outer boundary line straight portion.

8. the first outer end boundary line includes a first outer end boundary line first portion that extends linearly along the first direction, and a first outer end boundary line second portion that is connected to the first outer end boundary line first portion and is located inside the first outer end boundary line first portion in the second direction and closer to the second outer end boundary line in the first direction, 6. The method for manufacturing a semiconductor device according to claim 5, wherein the second outer boundary line includes a second outer boundary line first portion that extends linearly along the second direction, and a second outer boundary line second portion that is connected to both the second outer boundary line first portion and the first outer boundary line second portion and is located inside the second outer boundary line first portion in the first direction.

9. the seventh inner end boundary line includes a seventh inner end boundary line first portion that extends linearly along the first direction, and a seventh inner end boundary line second portion that is connected to the seventh inner end boundary line first portion and is positioned inside the seventh inner end boundary line first portion in the second direction and closer to the eighth inner end boundary line in the first direction, 6. The method for manufacturing a semiconductor device according to claim 5, wherein the eighth inner end boundary line includes an eighth inner end boundary line first portion that extends linearly along the second direction, and an eighth inner end boundary line second portion that is connected to both the eighth inner end boundary line first portion and the seventh inner end boundary line second portion and is located inside the eighth inner end boundary line first portion in the first direction.

10. the seventh inner end boundary line second portion has a seventh inner end boundary line straight portion extending linearly along the first direction, and a seventh inner end boundary line connecting portion connected to both the seventh inner end boundary line first portion and the seventh inner end boundary line straight portion, 10. The method for manufacturing a semiconductor device according to claim 9, wherein the eighth inner end boundary line second portion has an eighth inner end boundary line straight portion that is connected to the seventh inner end boundary line straight portion and extends linearly along the second direction, and an eighth inner end boundary line connecting portion that is connected to both the eighth inner end boundary line first portion and the eighth inner end boundary line straight portion.

11. the fifth inner end boundary line includes a fifth inner end boundary line first portion that extends linearly along the first direction, and a fifth inner end boundary line second portion that is connected to the fifth inner end boundary line first portion and is positioned outside the fifth inner end boundary line first portion in the second direction and closer to the sixth inner end boundary line in the first direction, 6. The method for manufacturing a semiconductor device according to claim 5, wherein the sixth inner end boundary line includes a sixth inner end boundary line first portion extending linearly along the second direction, and a sixth inner end boundary line second portion connected to both the sixth inner end boundary line first portion and the fifth inner end boundary line second portion and positioned outside the sixth inner end boundary line first portion in the first direction.

12. the first annular portion has, when viewed in the thickness direction, a fifth outer end boundary line located outwardly of the fifth inner end boundary line in the second direction, and a sixth outer end boundary line connected to the fifth outer end boundary line and located outwardly of the sixth inner end boundary line in the first direction, 12. A method for manufacturing a semiconductor device according to claim 5, wherein the second annular portion has, when viewed in the thickness direction, a seventh outer boundary line positioned outside the fifth outer boundary line in the second direction, and an eighth outer boundary line connected to the seventh outer boundary line and positioned outside the sixth outer boundary line in the second direction.

13. 13. The method for manufacturing a semiconductor device according to claim 5, wherein the second insulating layer has a thickness greater than a thickness of the first insulating layer.

14. 14. The method for manufacturing a semiconductor device according to claim 5, wherein the second insulating layer is made of a polyimide resin.

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