Electronic device

Abstract

To provide an electronic apparatus with excellent portability, or an electronic apparatus with excellent perspicuity.SOLUTION: In an electronic apparatus, a display portion including a light-emitting element is formed on a flexible film. By rotating a hinge to bend the display portion, the size of the electronic apparatus can be reduced. In the electronic apparatus with the reduced size, the display portion is provided so as to cover a housing and regions capable of display are provided on a front surface, side surfaces, and a back surface of the electronic apparatus. Moreover, the display portion can be developed.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. In particular, the display device has flexibility and can be bent. Further, one embodiment of the present invention relates to an electronic device including a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, Examples include storage devices, methods for driving them, and methods for manufacturing them. Cut. [Background technology]

[0003] In recent years, display devices have been expected to be used in a variety of applications, and are becoming increasingly diverse. For example, display devices used in portable electronic devices must be thin and lightweight. There is also a demand for new applications that have not been seen before. are.

[0004] In addition, Patent Document 1 discloses a film substrate on which transistors and other elements serving as switching elements are mounted. A flexible active matrix light emitting device having an organic EL element is disclosed. . [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, the amount of information displayed has increased by enlarging the display area of ​​the display device, and the list of displayed information has On the other hand, for mobile device applications, the display devices are becoming larger. This reduces portability. It has been difficult to achieve both high portability and high speed.

[0007] An object of one embodiment of the present invention is to provide an electronic device with excellent portability. It is an object of the present invention to provide an electronic device with excellent visibility. It is one of the objects to provide a novel display device or electronic device. One of the goals is to

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. It will be clear from the description of the specification, etc. that there are other problems than those mentioned above. It is possible to extract it. [Means for solving the problem]

[0009] One embodiment of the present invention is a display unit having a light-emitting element over a flexible film, a central portion of the display unit, and a display device. A fixed first support, two hinges at both ends of the first support, and a hinge between the first support and the first support. The second support and the third support sandwich the display unit, and the second support is a first cover that hides the edge of the display unit. The angle formed by the second support and the first support changes with the rotation of the hinge. The electronic device has an end portion that was hidden by the cover portion exposed, thereby increasing the area of ​​the display portion.

[0010] In the above configuration, the width a of the end portion hidden by the first cover portion is The area where the display unit is bent by rotation is wider than the product of the radius of curvature r and π. The electronic device disclosed in has a display unit on the front, side, and back, and has a total thickness of It can be thinned to about twice the radius of curvature r. Therefore, when reducing the thickness of electronic devices, It is preferable to make the radius r small, and the radius of curvature r is 10 mm or less, preferably 5 mm or less. Below.

[0011] In the above configuration, the flexible film is connected to the surface of the second support by the rotation of the hinge. The other hinge rotates to slide the flexible film. It has a mechanism that slides with the surface of the third support.

[0012] Another configuration is a display unit having a light emitting element on a flexible film, and a light emitting element fixed to the center of the display unit. The first support is sandwiched between two hinges at both ends of the first support. The second support and the third support are overlapped with the first end of the display unit. The third support has a first cover portion that overlaps the second end of the display portion, and the third support has a second cover portion that overlaps the second end of the display portion. The angle between the second support and the first support changes as the hinge rotates. A part of the display unit overlapping with the first cover part is bent, and a first part of the display unit overlapping with the first cover part is bent. The area of ​​the end is reduced, and the angle that the third support makes with the first support changes due to the rotation of the hinge. The hinge and the overlapping part of the display part are bent, and the overlapping part of the second cover part and the display part are bent. The electronic device has a reduced area at the second end of the part.

[0013] Another feature is the configuration in which the display can be folded by rotating the hinge to make it smaller. The structure includes a first region, a second region adjacent to the first region, and a second region adjacent to the first region. a third region adjacent to the second region, a fourth region adjacent to the second region, and a fifth region adjacent to the third region. The electronic device is provided with a display unit having a display area, and the display unit is formed on the same flexible film. the second region is a first side of the electronic device, and the third region is a second side of the electronic device. The fourth region overlaps with the first region, and the fifth region overlaps with the first region. The fourth and fifth areas are electronic devices that do not overlap.

[0014] When the electronic device is miniaturized, the display unit is provided so as to encase the housing, and the display unit is positioned on the surface of the electronic device. The display area is on the side and back of the device. It is possible. [Effects of the Invention]

[0015] It is possible to provide an electronic device with excellent portability or with excellent visibility. Alternatively, a highly reliable electronic device can be provided, or a novel display device can be provided. Furthermore, the description of these effects does not preclude the existence of other effects. It should be noted that one embodiment of the present invention does not necessarily have all of these effects. Effects other than those mentioned above will be obvious from the description, drawings, claims, etc. It is not possible to extract any other effects from the description, drawings, claims, etc. It is possible to do this. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a perspective view illustrating one embodiment of the present invention. [Figure 2] FIG. 1 is a perspective view illustrating one embodiment of the present invention. [Figure 3] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 4] 1A and 1B are a plan view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 5] 1A and 1B are diagrams illustrating examples of light-emitting panels according to an embodiment. [Figure 6] 1A and 1B are diagrams illustrating examples of light-emitting panels according to an embodiment. [Figure 7] FIG. 1 is a diagram showing an example of a touch panel according to an embodiment. [Figure 8] FIG. 1 is a diagram showing an example of a touch panel according to an embodiment. [Figure 9] FIG. 1 is a diagram showing an example of a touch panel according to an embodiment. [Figure 10] 1A and 1B are projection views illustrating a configuration of an input / output device according to an embodiment. [Figure 11] 1 is a cross-sectional view illustrating a configuration of an input / output device according to an embodiment. [Figure 12] 3A and 3B are diagrams for explaining the configurations and driving methods of a detection circuit 19 and a converter CONV according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0018] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0019] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0020] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0021] In this specification, the fact that the surface A is parallel to the surface B means that the angle between the normal to the surface A and the normal to the surface B is In this specification, the C-plane is defined as a plane that is inclined from -20° to 20°. Perpendicular to surface B means that the angle between the normal to surface C and the normal to surface B is between 70° and 110°. In addition, in this specification, the expression "line C is perpendicular to surface B" means that the normal line between line C and surface B is The angle between the first and second electrodes is defined as -20° to 20°. Line C is parallel to plane B if the angle between line C and the normal to plane B is between 70° and 110°. This refers to the

[0022] (Embodiment 1) In this embodiment, a structural example of an electronic device according to one embodiment of the present invention will be described with reference to drawings. do.

[0023] FIG. 1(A) shows a part of the configuration of an electronic device 200 shown in this configuration example (a display panel, a support, a heater, etc.). The electronic device 200 includes a display unit 201, a support 202a, a support It comprises a body 202b, a support 202c, and hinges 203a and 203b.

[0024] The support 202a and the support 202b are connected by a hinge 203a. The hinge 203a and the support 202b rotate relatively around the rotation axis 211a of the hinge 203a. In the example of the configuration shown in FIG. 1(A), the support 202a and the support 202b are b can be rotated at an angle of 90° or more around the rotation axis 211a from a horizontal state. can.

[0025] Here, the rotation axis 211a of the hinge 203a is the rotation axis of the rotation mechanism of the hinge 203a. For example, as shown in FIG. 1(B), the hinge 203a is a tangible object. In the case where the mechanism has a rotation center on the axis 211c (for example, axle), the extension direction of the axis The line coinciding with the direction of rotation is taken as the rotation axis 211a. In contrast, FIG. 1B is a perspective view from the opposite side to the display surface.

[0026] The support 202a and the support 202c are connected by a hinge 203b. The hinge 203b rotates relative to the support 202a and the support 202c around the rotation axis 211b of the hinge 203b. In the example of the configuration shown in FIG. 1(A), the support 202a and the support 202b are c can be rotated at an angle of 90° or more around the rotation axis 211b from a horizontal state. can.

[0027] The display unit 201 has a display surface on which an image or the like that is visually recognized by the user is displayed. In the above, the display surface refers to the surface of the display panel on which an image or the like is displayed.

[0028] At least a part of the display unit 201 is flexible. The display unit 201 can be reversibly transformed from a certain state to a state having a curved surface. The display unit 201 has at least a flexible portion that deforms in accordance with a change in the relative position of the two supports. The other portions do not need to be flexible.

[0029] The display unit 201 is partially supported and fixed by the support 202b. The display unit 201 is supported by the support 202a and the support 202c, but is not fixed. The frame has cover portions 202d and 202e that overlap the periphery of the display panel. The cover portions 202d and 202e are used to cover a part of the display area, a display drive circuit, and a connection portion with the FPC. It serves to hide the following:

[0030] In an electronic device 200 according to one embodiment of the present invention, a flexible display unit 201 is attached to three supports. The display unit 201 can be deformed by bending or the like. For example, the display unit 201 can be bent at two points so that the display surface is on the outside of the curved surface. When the support 202a is bent near the rotation axis 211a, the support 202a and the display unit 201 slide. When the display unit is bent at the rotation axis 211b, the support 202c and the display unit 201 is a sliding mechanism. By using this type of support method, The display unit 201 is flattened, that is, the display unit is bent at two points from FIG. 2(C) to be compact. In this state, that is, when the supports are rotated relative to each other as shown in FIG. 2(A), the aberration occurring in the display unit 201 is The sliding action compensates for this, and damage to the display unit 201 can be prevented. As shown in (B), the display unit 201 can be made smaller by bending it at two points. The electronic device 200 according to one embodiment of the present invention has a display portion 201 folded as shown in FIG. When unfolded, it has a wide, seamless surface as shown in Figure 2(C). The display area provides excellent visibility of the display.

[0031] 2(A), 2(B), and 2(C) also show one example of the configuration of the electronic device 200 shown in this configuration example. 2(A), 2(B), and 2(C) are perspective views showing the display panel, the support, and the hinge. In Fig. 2(C), the hinge is illustrated to make each component easier to understand. In order to prioritize the design of the device 200, the hinge may be housed inside the housing so that it is less visible. Figure 2(B) shows the folded state of the device, viewed from the opposite side of the main display surface. In order to maintain the state shown in FIG. 2(B), the support 202a and the support 202b are It is also possible to bring it into contact with 02c and fix them together using a magnet or the like.

[0032] In addition, when fixing the display unit 201 to each support, for example, it is fixed by adhesive, screws, etc. or a method of clamping the display unit 201 between members and mechanically fixing it.

[0033] 3A is a schematic cross-sectional view of the electronic device 200 when unfolded. 2 is a schematic cross-sectional view of the electronic device in a state where the display unit 201 is bent at two points to make it smaller. In order to make each component easier to understand, the hinge is shown enlarged. The radius of curvature r is 5 mm or less, which is a sufficiently small value compared to the width L.

[0034] The first part of the display unit 201 overlaps with the housing 207 of the electronic device 200 and the second part overlaps with the support 202b. The first area is the main display area, and the portion of the first area having a width L is not bent.

[0035] The display unit 201 has two bendable areas (second areas). The width is πr. The area that can be folded and positioned on the back side of the first area is The width of each of the (third regions) is width D, and they are not fixed but slide.

[0036] The width of the fourth region overlapping the cover portions 202d and 202e of the supports 202a and 202c is , each of which has a width a. This width a has the relationship a>πr. As shown in FIG. 3(B), the support members 202a and 202c are covered by the cover members 202d and 202e. Since there is a fourth region, when the display unit 201 is bent, the exposed portion of the display unit 201 shown in FIG. 3(B) is The area covered is larger than when unfolded.

[0037] FIG. 4(A) shows the relationship between the widths of the four regions when expanded. The part can be a displayable area, and when deployed, it overlaps with the cover parts 202d and 202e. The display cannot be seen due to the screen being folded, but when the display is folded, the back side can be used as the display area. The periphery of a flexible film on which a display section and the like are formed is shown by a chain line 209. As shown in FIG. 4(A), the periphery of the flexible film is covered with cover portions 202d, 202e, and The frame portions 202f and 202g are designed to be hidden by the support members. The frame portion 20 may be formed as a part of the frame portions 202a, 202b, and 202c, or may be provided separately. The distance W between 2f and the frame 202g is determined as the length of one side of the display unit 201. The display area of ​​the display unit 201 when unfolded has one side W and the other side (L+2πr+ For example, if the aspect ratio of the display area is 9:16, , and when expanded, W:(L+2πr+2D) should be 9:16. If the hinge of an electronic device is rotated to make it smaller, the area of ​​the display area will be W on one side, A rectangular first area with one side L and a curved surface adjacent to the first area with one side W. Two second regions with one side of πr and two third regions with one side of W and the other side of D. The area is the sum of the area and the region.

[0038] FIG. 4B shows a cross section of the electronic device when it is cut along the axis 211c and the rotation axis 211a. 1 shows a schematic diagram of a surface.

[0039] The housing 207 contains various ICs such as a battery, an image processing circuit, a calculation unit, and a drive circuit. Mounted printed circuit boards, wireless receivers, wireless transmitters, wireless power receivers, acceleration sensors, etc. By appropriately incorporating electronic components such as various sensors including the above, the electronic device 200 can be used as a mobile terminal. It can function as a portable image reproducing device, a portable lighting device, etc. The body 207 is provided with various input / output terminals including a camera, a speaker, a power supply terminal, a signal supply terminal, etc. Various sensors including optical sensors, operation buttons, etc. may also be incorporated.

[0040] The thickness of the display section 201 is 5 μm or more and 2000 μm or less, preferably 5 μm or more and 1000 μm or less. 00 μm or less, more preferably 10 μm to 500 μm, and even more preferably 20 mm The thinner the display unit 201, the more preferable the minimum allowable thickness. The radius of curvature can be reduced, and the electronic device 200 can be made thinner.

[0041] Also, if the display unit 201 is too thin and lacks mechanical strength, a small portion of the display unit 201 may be used. At the very least, a flexible sheet or the like may be attached to the curved portion to provide additional strength. In addition to elastic materials such as hard rubber, plastics, metals such as aluminum, stainless steel, The sheet may be made of an alloy such as a titanium alloy, or rubber such as silicone rubber. It is preferable to use a material that is less flexible than the display unit 201. When the transparent member is not light-transmitting, it is disposed on the rear side of the display unit 201 or in an area outside the display surface. A sheet with an opening in the area that overlaps with the display surface is placed on the display surface side, and the two sheets The display panel may be sandwiched between the mats.

[0042] When the two supports are folded, that is, when the curved portion of the display unit 201 has the smallest radius of curvature, The radius of curvature r in the curved state is 0.1 mm or more and 20 mm or less, preferably It should be set to 0.5 mm or more and 15 mm or less, more preferably 1 mm or more and 10 mm or less. It is preferable to set the gap to 4 mm or less.

[0043] Here, the radius of curvature r of the curved portion of the display unit 201 is the radius of curvature of the curved display surface. This refers to the smallest diameter.

[0044] (Embodiment 2) In this embodiment, a light-emitting panel that can be applied to a display panel included in an electronic device of one embodiment of the present invention will be described. An example of the configuration and manufacturing method of the panel will be described.

[0045] <Example 1> FIG. 5A shows a plan view of the light-emitting panel. An example of a cross-sectional view is shown in FIG. 5(C). The light-emitting panel shown in Example 1 uses a color filter method. In this embodiment, the light-emitting panel is a top-emission type. For example, a configuration in which one color is expressed using three sub-pixels of R (red), G (green), and B (blue), A single color is expressed using four sub-pixels: R (red), G (green), B (blue), and W (white). There are no particular limitations on the color elements, and colors other than RGBW may be used. For example, , yellow, cyan, magenta, etc.

[0046] The light-emitting panel shown in FIG. 5A includes a light-emitting section 804, a driving circuit section 806, and an FPC (Flexible Printed Circuit). The light emitting unit 804 and the driving circuit The light emitting element and the transistor included in the path portion 806 are formed by the substrate 801, the substrate 803, and the sealing layer 8 It is sealed by 23.

[0047] The light-emitting panel shown in FIG. 5(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of transistors. Transistor, conductive layer 857, insulating layer 815, insulating layer 817, a plurality of light-emitting elements, insulating layer 82 1, sealing layer 823, overcoat 849, coloring layer 845, light-shielding layer 847, insulating layer 843 , adhesive layer 841, and substrate 803. The sealing layer 823, overcoat 849, insulating Layer 843, adhesive layer 841, and substrate 803 are transparent to visible light.

[0048] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light emitting element 830 includes a lower electrode 83 on an insulating layer 817. 1, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. Preferably, the upper electrode 835 is transparent to visible light.

[0049] The light-emitting section 804 includes a colored layer 845 overlapping the light-emitting element 830 and a layer overlapping the insulating layer 821. The colored layer 845 and the light-shielding layer 847 are covered with an overcoat 849. The space between the light emitting element 830 and the overcoat 849 is filled with a sealing layer 823. There are.

[0050] The insulating layer 815 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 817 also has a planarizing function to reduce surface irregularities caused by the transistor. It is preferable to select an insulating layer having

[0051] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 5C, one of the transistors included in the driver circuit portion 806 is 1 shows two transistors.

[0052] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. The insulating layer 813 and the insulating layer 803 are bonded to each other by the adhesive layer 841. If a film with low water permeability is used for 843, impurities such as water may get into the light emitting element 830 or the transistor 820. This is preferable because it can prevent objects from entering and improve the reliability of the light-emitting panel.

[0053] The conductive layer 857 transmits signals (video signals, clock signals, switch signals, etc.) from the outside to the driving circuit section 806. It is electrically connected to an external input terminal that transmits a signal (such as a start signal or a reset signal) or a potential. Here, an example is shown in which an FPC808 is provided as an external input terminal. To prevent this, the conductive layer 857 is made of the same material as the electrodes and wiring used in the light emitting section and the drive circuit section. Here, the conductive layer 857 is preferably formed by a process. This shows an example in which the electrode is made of the same material and in the same process as the electrode to be used.

[0054] In the light-emitting panel shown in FIG. 5C, the connector 825 is located on the substrate 803. 25 includes a substrate 803, an adhesive layer 841, an insulating layer 843, a sealing layer 823, an insulating layer 817, and The conductive layer 857 is connected to the connector 82 through an opening provided in the insulating layer 815. 5 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are connected via the connector 825. When the conductive layer 857 and the substrate 803 overlap, an opening is made in the substrate 803. By using a substrate with an opening, the conductive layer 857, the connector 825, and the FP C808 can be electrically connected.

[0055] In Example 1, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a highly heat-resistant substrate. The substrate 830 is then peeled off, and an insulating layer 8 is formed on the substrate 801 using an adhesive layer 811. 13, a transistor 820, and a light-emitting element 830. In addition, in Example 1, the insulating layer 843 and the colored layer 845 are formed on a highly heat-resistant substrate. and a light-shielding layer 847 is formed, the substrate on which the layer is formed is peeled off, and the layer is formed on the substrate 803 using the adhesive layer 841. A light-emitting panel can be produced by transposing the insulating layer 843, the colored layer 845, and the light-shielding layer 847. It shows.

[0056] If a substrate is made of a material with low heat resistance (such as resin), the substrate is exposed to high temperatures during the manufacturing process. Since it is difficult to form a thin film on the substrate, there are limitations on the conditions for forming transistors and insulating layers on the substrate. When using a highly permeable material (such as resin) for the substrate, high temperatures are applied to form a low-permeability film. In the manufacturing method of this embodiment, it is preferable to form a transistor on a manufacturing substrate having high heat resistance. High temperature can be used to produce highly reliable transistors and transistors with sufficient water permeability. Then, they can be transferred to the substrate 801 or the substrate 803. Thus, in one embodiment of the present invention, a light-emitting panel with high reliability can be manufactured. A light-weight, thin, and highly reliable light-emitting panel can be realized. Details of the manufacturing method will be described later. do.

[0057] <Example 2> FIG. 5B shows a plan view of the light-emitting panel. An example of a cross-sectional view is shown in FIG. 5(D). The light-emitting panel shown in Example 2 is different from Example 1 in that It is a top-emission type light-emitting panel that uses a color filter method. Only the differences from Example 1 will be described in detail, and explanations of the points in common with Example 1 will be omitted.

[0058] The light-emitting panel shown in FIG. 5(D) differs from the light-emitting panel shown in FIG. 5(C) in the following respects.

[0059] The light-emitting panel shown in FIG. 5D has spacers 827 over the insulating layer 821. By providing 827, the distance between the substrate 801 and the substrate 803 can be adjusted.

[0060] 5(D), the substrate 801 and the substrate 803 are different in size. The connector 825 is located on the insulating layer 843 and does not overlap the substrate 803. The conductive layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815 are provided with openings. Since there is no need to provide an opening in the substrate 803, the material of the substrate 803 is The fee is not limited.

[0061] <Example 3> FIG. 6(A) shows a plan view of the light-emitting panel, and the area between the dashed dotted lines A5-A6 in FIG. An example of a cross-sectional view is shown in Figure 6(C). The light-emitting panel shown in Example 3 uses a color-coded method. It is a top-emission type light-emitting panel.

[0062] The light-emitting panel shown in FIG. 6A includes a light-emitting section 804, a driving circuit section 806, and an FPC 808. The light emitting element and the transistor included in the light emitting section 804 and the driving circuit section 806 are mounted on the substrate 80. 1, the substrate 803, the frame-shaped sealing layer 824, and the sealing layer 823.

[0063] The light-emitting panel shown in FIG. 6(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of transistors. Transistor, conductive layer 857, insulating layer 815, insulating layer 817, a plurality of light-emitting elements, insulating layer 82 1, a sealing layer 823, a frame-shaped sealing layer 824, and a substrate 803. Plate 803 transmits visible light.

[0064] The frame-shaped sealing layer 824 is preferably a layer having higher gas barrier properties than the sealing layer 823. This prevents moisture and oxygen from entering the light-emitting panel from the outside. This makes it possible to realize a highly reliable light-emitting panel. 823 is waterproof and dustproof.

[0065] In Example 3, light emitted from the light emitting element 830 is extracted from the light emitting panel through the sealing layer 823. Therefore, it is preferable that the sealing layer 823 has higher light-transmitting properties than the frame-shaped sealing layer 824. Furthermore, it is preferable that the refractive index of the sealing layer 823 is higher than that of the frame-shaped sealing layer 824. Furthermore, the sealing layer 823 has a smaller shrinkage in volume when hardened than the frame-shaped sealing layer 824. It is preferable that:

[0066] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light emitting element 830 includes a lower electrode 83 on an insulating layer 817. 1, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. Preferably, the upper electrode 835 is transparent to visible light.

[0067] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 6C, one of the transistors included in the driver circuit portion 806 is 1 shows two transistors.

[0068] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. If a film with low water permeability is used, impurities such as water may penetrate into the light emitting element 830 and the transistor 820. This is preferable because it can suppress the penetration of light and improve the reliability of the light-emitting panel.

[0069] The conductive layer 857 serves as an external input terminal for transmitting signals and potentials from the outside to the driving circuit portion 806. Electrically connect. Here, an example is shown where an FPC808 is used as the external input terminal. Here, the conductive layer 857 is made of the same material as the electrode of the transistor 820. An example produced using the same process is shown below.

[0070] In the light-emitting panel shown in FIG. 6C, the connector 825 is located on the substrate 803. 25 is an opening provided in the substrate 803, the sealing layer 823, the insulating layer 817, and the insulating layer 815. The connector 825 is connected to the conductive layer 857 via the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected via the connector 825.

[0071] In Example 3, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a substrate having high heat resistance. The substrate 830 is then peeled off, and an insulating layer 8 is formed on the substrate 801 using an adhesive layer 811. 13, a transistor 820, and a light-emitting element 830. Since transistors and other devices can be manufactured on a highly heat-resistant substrate, This allows for the formation of highly reliable transistors and films with sufficiently low water permeability. By transferring these to the substrate 801, a highly reliable light-emitting panel can be fabricated. Therefore, in one embodiment of the present invention, a light-emitting panel that is lightweight or thin and has high reliability can be realized. Cut.

[0072] <Example 4> FIG. 6B shows a plan view of the light-emitting panel. An example of a cross-sectional view is shown in FIG. 6(D). The light-emitting panel shown in Example 4 uses a color filter method. The bottom-emission type light-emitting panel used here is

[0073] The light-emitting panel shown in FIG. 6(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of transistors. Transistor, conductive layer 857, insulating layer 815, colored layer 845, insulating layer 817a, insulating layer 81 7b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, a sealing layer 823, and a substrate 803 The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and The insulating layer 817b transmits visible light.

[0074] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light-emitting element 830 includes an insulating layer A lower electrode 831 on the EL layer 833, an EL layer 833 on the lower electrode 831, and an upper electrode 832 on the EL layer 833. The lower electrode 831 is the source electrode or drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. The upper electrode 835 preferably reflects visible light. The lower electrode 831 preferably transmits visible light. The position where the colored layer 845 overlapping the light emitting element 830 is provided is not particularly limited. If it is provided between the edge layer 817a and the insulating layer 817b, or between the insulating layer 815 and the insulating layer 817a, good.

[0075] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 6C, two of the transistors included in the driver circuit portion 806 are 1 shows two transistors.

[0076] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. If a film with low water permeability is used, impurities such as water can easily penetrate the light emitting element 830 and the transistors 820 and 822. This is preferable because it can prevent impurities from entering and improve the reliability of the light-emitting panel.

[0077] The conductive layer 857 serves as an external input terminal for transmitting signals and potentials from the outside to the driving circuit portion 806. Electrically connect. Here, an example is shown where an FPC808 is used as the external input terminal. Here, the conductive layer 857 is formed using the same material and in the same process as the conductive layer 816. Here is an example.

[0078] In Example 4, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a substrate having high heat resistance. The substrate is peeled off, and an insulating layer is formed on the substrate 801 using the adhesive layer 811. A light-emitting panel that can be produced by transposing 813, a transistor 820, a light-emitting element 830, etc. Since transistors and other devices can be manufactured on a highly heat-resistant substrate, This allows for the formation of highly reliable transistors and films with sufficiently low water permeability. By transferring these to the substrate 801, a highly reliable light-emitting panel can be fabricated. As a result, in one embodiment of the present invention, a light-weight or thin and highly reliable light-emitting panel can be realized. It can be realized.

[0079] <Example 5> Figure 6(E) shows a phenomenon different from Examples 1, 2, 3, and 4. 1 shows an example of a light panel.

[0080] The light-emitting panel shown in FIG. 6(E) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a conductive layer 8 14, conductive layer 857a, conductive layer 857b, light-emitting element 830, insulating layer 821, sealing layer 823 , and a substrate 803.

[0081] The conductive layer 857a and the conductive layer 857b are external connection electrodes of the light-emitting panel, and are connected to an FPC or the like. Electrical connection can be made.

[0082] The light emitting element 830 has a lower electrode 831, an EL layer 833, and an upper electrode 835. The end of the bottom electrode 831 is covered with an insulating layer 821. The light emitting element 830 is a bottom emitting element. The light extraction side is either a top-emission type or a dual-emission type. The electrode, the substrate, the insulating layer, etc. are transparent to visible light. and electrically connect it.

[0083] The substrate on the light extraction side has a hemispherical lens and a microlens array as a light extraction structure. For example, the resin substrate may have a film with a concave-convex structure, a light-diffusing film, or the like. The lens or film is placed on a plate with a refractive index similar to that of the substrate or the lens or film. By bonding the substrate using an adhesive having the above-mentioned properties, a light extraction structure can be formed.

[0084] The conductive layer 814 is not necessarily provided, but it is possible to reduce the voltage drop due to the resistance of the lower electrode 831. For the same purpose, the upper electrode 835 and the electrode A conductive layer for electrical connection is formed on the insulating layer 821, the EL layer 833, the upper electrode 835, or the like. It may be provided.

[0085] The conductive layer 814 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of aluminum, scandium, nickel, and aluminum, or materials containing these as their main components The conductive layer 814 can be formed as a single layer or a stacked layer using an alloy material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0.1 μm or less. It is less than 0.5μm.

[0086] A paste (such as silver paste) is used as the material for the conductive layer electrically connected to the upper electrode 835. When the conductive layer is heated, the metal constituting the conductive layer becomes granular and aggregates. This results in a structure with many gaps, making it difficult for the EL layer 833 to completely cover the conductive layer, and This is preferable because it becomes easier to electrically connect the conductive layer to the conductive layer.

[0087] In Example 5, the insulating layer 813, the light emitting element 830, etc. are fabricated on a highly heat-resistant fabrication substrate. The substrate is peeled off, and an insulating layer 813 and a light emitting element 83 are formed on the substrate 801 using an adhesive layer 811. This shows a light-emitting panel that can be manufactured by transposing 0 etc. on a highly heat-resistant manufacturing substrate. By applying high temperature, an insulating layer 813 or the like having a sufficiently low water permeability is formed, and the insulating layer 813 is transferred to the substrate 801. As a result, a light-emitting panel with high reliability can be manufactured. This makes it possible to realize a thin and highly reliable light-emitting panel.

[0088] (Embodiment 3) In this embodiment, a folding LCD panel that can be applied to a display panel included in an electronic device of one embodiment of the present invention will be described. The configuration of the bendable touch panel will be described with reference to FIGS.

[0089] <Configuration Example 1> Fig. 7(A) is a top view of a touch panel. Fig. 7(B) is a diagram of one point of Fig. 7(A). 7(C) is a cross-sectional view taken along the dashed line AB and the dashed line CD in FIG. This is a cross-sectional view between EF.

[0090] As shown in FIG. 7A, the touch panel 390 includes a display unit 301 .

[0091] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. This allows the detection of a finger or the like touching the display unit 301. A touch sensor can be configured using the above.

[0092] The pixel 302 includes a plurality of sub-pixels (for example, the sub-pixel 302R), each of which includes a light-emitting element and a The pixel circuit is capable of supplying power to drive the light emitting element.

[0093] The pixel circuit includes wiring that can supply a selection signal and wiring that can supply an image signal. The wiring is electrically connected to the wiring.

[0094] The touch panel 390 also includes a scan line driver that can supply selection signals to the pixels 302. circuit 303g(1), and an image signal line driving circuit capable of supplying an image signal to the pixel 302. It has a path 303s(1).

[0095] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.

[0096] The imaging pixel circuit has wiring that can supply a control signal and a power supply potential. It is electrically connected to the wiring that can be used.

[0097] The control signal is used to select an imaging pixel circuit that reads out the recorded imaging signal, for example. a signal that can initialize the imaging pixel circuit, and a signal that can initialize the imaging pixel circuit Examples of such signals include signals that can determine the time at which the signal is detected.

[0098] The touch panel 390 may provide control signals to the imaging pixels 308. and an imaging signal line drive circuit 303s(2) that reads out imaging signals. .

[0099] As shown in FIG. 7B, the touch panel 390 includes a substrate 510 and a substrate facing the substrate 510. The substrate 570 is a substrate for supporting the semiconductor device.

[0100] A flexible material can be suitably used for the substrate 510 and the substrate 570 .

[0101] Materials that suppress the permeation of impurities can be suitably used for the substrates 510 and 570. For example, if the water vapor permeability is 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 Materials with a shelf life of 10 days or less can be suitably used.

[0102] Materials with approximately the same linear expansion coefficient can be suitably used for the substrates 510 and 570. For example, if the linear expansion coefficient is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferable Preferably 1 x 10 -5 A material having a solubility of 1 / K or less can be suitably used.

[0103] The substrate 510 includes a base material 510b, an insulating layer 510a that prevents impurities from diffusing into the light-emitting element, and The laminate is formed by laminating an adhesive layer 510c that bonds the base material 510b and the insulating layer 510a. .

[0104] The substrate 570 includes a flexible substrate 570b and an insulating layer 570a that prevents impurities from diffusing into the light emitting element. and an adhesive layer 570c that bonds the flexible substrate 570b and the insulating layer 570a together. do.

[0105] For example, polyester, polyolefin, polyamide (nylon, aramid, etc.), poly Imide, polycarbonate or acrylic, urethane, epoxy or siloxane bonded A material containing a resin having the formula (I) can be used for the adhesive layer.

[0106] The sealing layer 560 bonds the substrate 570 to the substrate 510. The sealing layer 560 is In addition, when light is extracted to the sealing layer 560 side, the sealing layer 560 has a high refractive index. The pixel circuit and the light emitting element (for example, the first light emitting element 350R) are connected to the substrate. 510 and the substrate 570.

[0107] The pixel 302 includes a subpixel 302R, a subpixel 302G, and a subpixel 302B (FIG. 7( C)). The subpixel 302R includes a light-emitting module 380R, and the subpixel 302G includes a light-emitting Subpixel 302B comprises light-emitting module 380G, and subpixel 302B comprises light-emitting module 380B.

[0108] For example, the subpixel 302R supplies power to the first light-emitting element 350R and the second light-emitting element 350R. (FIG. 7B) shows a pixel circuit including a transistor 302t that can supply the The light emitting module 380R includes a first light emitting element 350R and an optical element (for example, a colored layer 3 67R).

[0109] The light emitting element 350R includes a first lower electrode 351R, an upper electrode 352, and a lower electrode 351R. It has an EL layer 353 between upper electrodes 352 (FIG. 7(C)).

[0110] The EL layer 353 includes a first EL layer 353a, a second EL layer 353b, and a second EL layer 353c. An intermediate layer 354 is provided between 53a and the second EL layer 353b.

[0111] The light emitting module 380R has a first colored layer 367R on the substrate 570. The colored layer is particularly It is sufficient if it transmits light having a certain wavelength, for example, red, green, or blue. Alternatively, the light emitted by the light emitting element can be directly transmitted through the light emitting element. Alternatively, a transparent region may be provided.

[0112] For example, the light emitting module 380R includes a first light emitting element 350R and a first color layer 367R. The sealing layer 360 is in contact with the substrate.

[0113] The first colored layer 367R is located so as to overlap the first light emitting element 350R. A part of the light emitted by the optical element 350R is incident on the sealing layer 360 having the function of optical bonding and the first insulating layer 362. The light passes through the color layer 367R and is emitted to the outside of the light-emitting module 380R as shown by the arrow in the figure. will be done.

[0114] The touch panel 390 has a light-shielding layer 367BM on a substrate 570. The light-shielding layer 367BM , and is provided so as to surround the colored layer (for example, the first colored layer 367R).

[0115] The touch panel 390 includes an anti-reflection layer 367p at a position overlapping the display unit 301. The antireflection layer 367p may be, for example, a circular polarizer.

[0116] The touch panel 390 includes an insulating layer 321. The insulating layer 321 is connected to the transistor 302t. The insulating layer 321 serves to flatten the unevenness caused by the pixel circuit. In addition, the diffusion of impurities into the transistor 302t and the like can be suppressed. An insulating layer having a laminate of layers that can be formed can be applied to the insulating layer 321.

[0117] The touch panel 390 has a light emitting element (for example, a first light emitting element 350R) mounted on an insulating layer 321. has.

[0118] The touch panel 390 has a partition wall 328 overlapping the end of the first lower electrode 351R and an insulating layer 3 21. Also, a spacer 329 for controlling the distance between the substrate 510 and the substrate 570 is provided on the substrate 510. It is located on the wall 328.

[0119] The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c. The driver circuit can be formed on the same substrate as the pixel circuit in the same process. As shown in B), the transistor 303t has a second gate 304 on the insulating layer 321. The second gate 304 is electrically connected to the gate of the transistor 303t. If necessary, the second The gate 304 may be provided to the transistor 308t, the transistor 302t, and the like.

[0120] The imaging pixel 308 converts light incident on the photoelectric conversion element 308p and the photoelectric conversion element 308p into a The imaging pixel circuit includes a transistor 308t. include.

[0121] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0122] The touch panel 390 includes wiring 311 through which signals can be supplied, and terminals 319 The wiring 311 is provided to supply signals such as image signals and synchronization signals. The FPC 309(1) is electrically connected to the terminal 319. 1) may have a printed wiring board (PWB) attached.

[0123] The transistors formed in the same process are referred to as transistor 302t and transistor 303. t, and transistor 308t.

[0124] In addition to the gate, source, and drain of the transistor, each element constituting the touch panel Materials that can be used for the seed wiring and electrodes include aluminum, titanium, chromium, nickel, and the like. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten It uses a single metal such as nickel or an alloy containing this as the main component in a single layer structure or a laminated structure. For example, a single layer structure of an aluminum film containing silicon, or a structure in which an aluminum film is laminated on a titanium film, a two-layer structure with an aluminum film laminated on a tungsten film; a two-layer structure with a copper-magnesium film laminated on a tungsten film - Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film Two-layer structure with copper film laminated on tungsten film, titanium film or titanium nitride film and its An aluminum film or copper film is laminated on the titanium film or titanium nitride film, and then a titanium film or copper film is laminated on top of that. A three-layer structure in which a titanium film or a titanium nitride film is formed, a molybdenum film or a molybdenum nitride film, and An aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and There are three-layer structures, such as a molybdenum film or molybdenum nitride film formed on top of the oxide film. Transparent conductive materials containing indium, tin oxide, or zinc oxide may also be used. The use of copper containing copper is preferred because it improves the controllability of the shape by etching.

[0125] <Configuration Example 2> FIGS. 8(A) and (B) are perspective views of the touch panel 505. 9 is a cross section taken along the dashed line X1-X2 in FIG. Figure.

[0126] The touch panel 505 includes a display unit 501 and a touch sensor 595 (FIG. 8B). The touch panel 505 also includes a substrate 510, a substrate 570, and a substrate 590. The substrate 510, the substrate 570 and the substrate 590 are all flexible.

[0127] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a display device for supplying signals to the pixels. The plurality of wirings 511 are arranged on the periphery of the substrate 510. The terminal 519 is connected to the FPC 509 (1 ) and electrically connect it.

[0128] The substrate 590 includes a touch sensor 595 and a plurality of electrodes electrically connected to the touch sensor 595. The wiring 598 is routed around the periphery of the substrate 590, and some of the wiring 598 The terminal is electrically connected to the FPC 509(2). 8B, for clarity, the touch panel provided on the rear surface side (substrate 510 side) of the substrate 590 is The electrodes, wiring, etc. of the sensor 595 are shown by solid lines.

[0129] As the touch sensor 595, for example, a capacitance type touch sensor can be applied. The capacitance type includes a surface capacitance type, a projected capacitance type, and the like.

[0130] The projected capacitive type is mainly divided into self-capacitance type and mutual capacitance type, which differ mainly in the driving method. The mutual capacitance method is preferable because it allows simultaneous multi-point detection.

[0131] In the following, we will explain the case where a projected capacitive touch sensor is applied, using Fig. 8(B). This will be used to explain.

[0132] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger are used. It can be used.

[0133] The projected capacitive touch sensor 595 has an electrode 591 and an electrode 592. 591 is electrically connected to one of the plurality of wirings 598, and the electrode 592 is electrically connected to one of the plurality of wirings 598. and electrically connect to any other of the above.

[0134] As shown in FIGS. 8(A) and 8(B), the electrode 592 is a plurality of electrodes repeatedly arranged in one direction. It has a shape in which quadrilaterals are connected at their corners.

[0135] The electrode 591 is quadrilateral and is repeatedly arranged in a direction intersecting the direction in which the electrode 592 extends. It has been done.

[0136] The wiring 594 electrically connects the two electrodes 591 that sandwich the electrode 592. It is preferable to have a shape that minimizes the area of ​​the intersection between the electrode 592 and the wiring 594. This reduces the area of ​​the region where no electrodes are provided, and reduces variations in transmittance. As a result, unevenness in brightness of light passing through the touch sensor 595 can be reduced.

[0137] The shapes of the electrodes 591 and 592 are not limited to this, and may take various shapes. For example, a plurality of electrodes 591 are arranged with as few gaps as possible, and the electrodes 591 are connected to each other via an insulating layer. 92 may be provided at intervals so as to form an area that does not overlap with the electrode 591. At this time, a dummy electrode 592 is placed between two adjacent electrodes 592, and is electrically insulated from these electrodes. Providing an electrode is preferable because it can reduce the area of ​​the region with different transmittance.

[0138] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and and electrode 592, an insulating layer 593 covering electrode 591 and electrode 592, and adjacent electrodes 591 and a wiring 594 for electrically connecting the

[0139] The adhesive layer 597 adheres the substrate 590 to the touch sensor 595 so that the touch sensor 595 overlaps the display unit 501. It is glued to board 570.

[0140] The electrode 591 and the electrode 592 are formed using a light-transmitting conductive material. Conductive materials that can be used include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide and zinc oxide doped with gallium can be used. A film containing graphene can also be used. The film containing graphene is, for example, in the form of a film. The graphene oxide film can be formed by reducing the graphene oxide film. Examples of the method include a method of applying heat.

[0141] After forming a film of a light-transmitting conductive material on a substrate 590 by sputtering, By using various patterning techniques such as lithography, unnecessary parts are removed to form electrodes 59. 1 and electrode 592 can be formed.

[0142] The insulating layer 593 may be made of a resin such as acrylic or epoxy. In addition to resins with siloxane bonds, silicon oxide, silicon oxynitride, and aluminum oxide Inorganic insulating materials such as the above may also be used.

[0143] An opening reaching the electrode 591 is provided in the insulating layer 593, and a wiring 594 is formed on the adjacent electrode 591. The transparent conductive material increases the aperture ratio of the touch panel. Therefore, it can be suitably used for the wiring 594. 2. Materials with higher conductivity can reduce electrical resistance and are therefore suitable for use as wiring 594. can.

[0144] One electrode 592 extends in one direction, and multiple electrodes 592 are provided in a stripe pattern. .

[0145] The wiring 594 is provided to intersect with the electrodes 592 .

[0146] A pair of electrodes 591 are provided with one electrode 592 sandwiched therebetween, and wiring 594 is connected to the pair of electrodes 591 are electrically connected.

[0147] The plurality of electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one electrode 592. The angle between the two electrodes may be less than 90 degrees.

[0148] One of the wirings 598 is electrically connected to the electrode 591 or the electrode 592. The wiring 598 is made of, for example, aluminum, gold, platinum, silver, or the like. , nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or para Metallic materials such as zinc and alloy materials containing such metallic materials can be used.

[0149] Note that an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0150] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0151] The connection layer 599 may be made of various anisotropic conductive films (ACFs). Conductive Film) and Anisotropic Conductive Paste (ACP) Pic Conductive Paste) can be used.

[0152] The adhesive layer 597 is transparent. For example, a thermosetting resin or an ultraviolet curing resin may be used. Specifically, the resin may have an acrylic, urethane, epoxy, or siloxane bond. Resins such as resins can be used.

[0153] The display unit 501 includes a plurality of pixels arranged in a matrix. The display device includes a pixel circuit that drives the display element.

[0154] In this embodiment, an organic EL element that emits white light is applied to a display element. However, the display element is not limited to this. The display device may be a display device using dye ink, electronic liquid powder (registered trademark), or electrophoretic elements.

[0155] For example, organic EL elements with different luminescent colors can be used as sub-pixels so that the color of light emitted varies from sub-pixel to sub-pixel. It may be applied pixel by pixel.

[0156] The substrate 510, the substrate 570, and the sealing layer 560 can have the same configuration as in the first configuration example.

[0157] The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.

[0158] The sub-pixel 502R supplies power to the first light-emitting element 550R and the second light-emitting element 550R. The light emitting module further includes a pixel circuit including a transistor 502t. 580R includes a first light emitting element 550R and an optical element (eg, a color layer 567R).

[0159] The light-emitting element 550R has a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode. .

[0160] The light emitting module 580R has a first colored layer 567R in the light extraction direction.

[0161] In addition, when the sealing layer 560 is provided on the light extraction side, the sealing layer 560 is It contacts the light emitting element 550R and the first colored layer 567R.

[0162] The first colored layer 567R is located so as to overlap the first light emitting element 550R. A part of the light emitted by the optical element 550R passes through the first colored layer 567R and is reflected by the arrows in the figure. The light is emitted to the outside of the light-emitting module 580R in the direction of the arrow.

[0163] The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. , and is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0164] The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixel. For example, a circular polarizer can be used as p.

[0165] The display portion 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing the diffusion of impurities may be applied to the insulating film 521. This can reduce the reliability of the transistor 502t and the like due to the diffusion of impurities. This can suppress the decline in

[0166] The display unit 501 has a light-emitting element (for example, a first light-emitting element 550R) on an insulating film 521. do.

[0167] The display portion 501 has a partition wall 528 on the insulating film 521, which overlaps with an end portion of the first lower electrode. In addition, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528 .

[0168] The scanning line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. In addition, the driver circuit can be formed on the same substrate as the pixel circuit in the same process.

[0169] The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is connected to the wiring 511. 11. In addition, F PC 509(1) is electrically connected to terminal 519.

[0170] A printed wiring board (PWB) may be attached to the FPC509(1). stomach.

[0171] The display portion 501 has wiring such as scanning lines, signal lines, and power supply lines. can be used for wiring.

[0172] Note that various transistors can be applied to the display portion 501. The configuration when the data is applied to the display unit 501 is shown in FIGS. 9(A) and 9(B).

[0173] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. The present invention can be applied to the transistors 502t and 503t.

[0174] For example, a semiconductor containing polycrystalline silicon crystallized by a process such as laser annealing. The layer is applied to the transistor 502t and the transistor 503t shown in FIG. 9(B). It is possible.

[0175] Also, a configuration in which a top gate type transistor is applied to the display unit 501 is shown in FIG. C) is shown in the figure.

[0176] For example, a single crystal silicon film transferred from a polycrystalline silicon or single crystal silicon substrate, etc. The semiconductor layer including the above is used as the transistor 502t and the transistor 50 Can be applied to 3T.

[0177] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. do.

[0178] (Fourth embodiment) In this embodiment, the configuration of an input / output device of one embodiment of the present invention will be described with reference to FIGS. 10 and 11. The explanation will be given with reference to the above.

[0179] FIG. 10 is a projection diagram illustrating the configuration of an input / output device of one embodiment of the present invention.

[0180] FIG. 10A is a projection view of an input / output device 500 according to one embodiment of the present invention, and FIG. 10 is a projection view illustrating the configuration of a detection unit 20U included in the force device 500. FIG.

[0181] FIG. 11 is a cross-sectional view illustrating a structure of an input / output device 500 of one embodiment of the present invention.

[0182] FIG. 11A is a cross-sectional view of the input / output device 500 of one embodiment of the present invention shown in FIG. 10 along Z1-Z2. FIG.

[0183] The input / output device 500 can also be called a touch panel.

[0184] <Configuration Example 1 of Input / Output Device> The input / output device 500 described in this embodiment is a device that transmits visible light. A plurality of detection units 20U are provided with windows 14 that are arranged in a matrix, and (indicated by arrow R in the figure) The line G1 and the plurality of detection units 20U arranged in the column direction (indicated by the arrow C in the drawing) are electrically and a signal line DL connected to the detection unit 20U, a scanning line G1, and a signal line DL. a flexible input device 100 having a flexible first substrate 16 that supports the window 14 and A plurality of pixels 502 are arranged in a matrix and a flexible second substrate supporting the pixels 502. and a display portion 501 having a substrate 510 (see FIGS. 10A to 10C). .

[0185] The detection unit 20U includes a detection element C that overlaps the window portion 14 and a detection element C that is electrically connected to the detection element C. The detector 19 is provided (see FIG. 10(B)).

[0186] The sensing element C includes an insulating layer 23, a first electrode 21, and a second electrode 22 sandwiching the insulating layer 23. (See FIG. 11(A)).

[0187] The detection circuit 19 receives the selection signal and generates a detection signal D based on the change in capacitance of the detection element C. Supply ATA.

[0188] The scanning line G1 can supply a selection signal, and the signal line DL supplies a detection signal DATA. The detection circuit 19 is arranged so as to overlap the gaps between the plurality of windows 14.

[0189] The input / output device 500 described in this embodiment includes a detection unit 20U and a detection unit A colored layer is provided between the pixels 502 that overlap with the window portions 14 of the pixel 20U.

[0190] The input / output device 500 described in this embodiment is a detection device having a window 14 that transmits visible light. A flexible input device 100 having a plurality of units 20U and a pixel 502 overlapping the window portion 14 and a plurality of flexible display units 501, and a colored layer is provided between the window unit 14 and the pixel 502. It consists of:

[0191] This allows the input / output device to generate a detection signal based on the change in capacitance and a detection unit that supplies the detection signal. and displaying image information associated with the location information of the detection unit. As a result, a novel and convenient device with excellent reliability can be realized. Input / output devices may be provided.

[0192] The input / output device 500 is connected to the FPC 1 or and / or an FPC 2 that supplies a signal including image information to the display unit 501.

[0193] In addition, a protective layer 17p and / or an input / output layer 502 are provided to protect the input / output device 500 from scratches. The device 500 may include an anti-reflective layer 567p that reduces the intensity of reflected ambient light.

[0194] The input / output device 500 also includes a scanning line driving circuit that supplies selection signals to the scanning lines of the display unit 501. 503g, wiring 511 for supplying signals and terminals 519 electrically connected to the FPC2 Has.

[0195] The individual elements that make up the input / output device 500 will be described below. are not clearly separable, and one component may also contain other components or parts of other components. be.

[0196] For example, the input device 100 having the colored layer at a position overlapping the plurality of window portions 14 is 0 and also a color filter.

[0197] In addition, for example, an input / output device 500 in which the input device 100 is superimposed on a display unit 501 is 100 and also a display unit 501.

[0198] The input / output device 500 includes the input device 100 and a display unit 501 (see FIG. 10(A)). ).

[0199] The input device 100 includes a plurality of detection units 20U and a flexible substrate supporting the detection units. For example, a plurality of detection units 20U are flexibly arranged in a matrix of 40 rows and 15 columns. The adhesive layer 16 is disposed on a flexible substrate 16 .

[0200] The window 14 transmits visible light.

[0201] A colored layer that transmits light of a predetermined color is provided at a position overlapping the window portion 14. For example, a colored layer CFB that transmits green light, a colored layer CFG that transmits red light, or Equipped with CFR (see Figure 10(B)).

[0202] In addition to blue, green, and / or red, a colored layer that transmits white light or a yellow Colored layers that transmit light of various colors may be provided.

[0203] The colored layer may be made of a metal material, a pigment, a dye, or the like.

[0204] A light-shielding layer BM is provided so as to surround the window portion 14. The light-shielding layer BM transmits light from the window portion 14. It's difficult.

[0205] Carbon black, metal oxides, composite oxides including solid solutions of multiple metal oxides, etc. can be used for the layer BM.

[0206] The scanning line G1, the signal line DL, the wiring VPI, the wiring RES, and the like are arranged at positions overlapping the light-shielding layer BM. It is provided with a wiring VRES and a detection circuit 19.

[0207] In addition, a light-transmitting overcoat layer that covers the colored layer and the light-shielding layer BM may be provided. do.

[0208] The sensing element C has a first electrode 21, a second electrode 22, and a pair of electrodes 21 and 22. An insulating layer 23 is provided between them (see FIG. 11(A)).

[0209] The first electrode 21 is formed, for example, in an island shape so as to be separated from other regions. The same electrode as the first electrode 21 is used so that the first electrode 21 is not identified to the user of the force device 500. It is preferable to arrange the layer that can be fabricated in the process in close proximity to the first electrode 21. More preferably, the first electrode 21 and the layer disposed adjacent to the first electrode 21 are disposed in the gap. It is preferable to minimize the number of windows 14 in the gap. A configuration with this is preferred.

[0210] The second electrode 22 is provided so as to overlap the first electrode 21, and the first electrode 21 and the second electrode 22 An insulating layer 23 is provided between them.

[0211] For example, the first electrode 21 or the second electrode 22 of the sensing element C placed in the atmosphere is connected to the atmosphere. When an object with a different dielectric constant approaches, the capacitance of the sensing element C changes. When an object approaches the sensing element C, the capacitance of the sensing element C changes. This allows for proximity detection. It can be used as a vessel.

[0212] For example, the capacitance of the sensing element C, which can be deformed, changes with the deformation.

[0213] Specifically, when an object such as a finger touches the sensing element C, the first electrode 21 and the second electrode As the spacing between the poles 22 decreases, the capacitance of the sensing element C increases. It can be used.

[0214] Specifically, by bending the detection element C, the first electrode 21 and the second electrode 22 This increases the capacitance of the sensing element C. It can be used.

[0215] The first electrode 21 and the second electrode 22 include a conductive material.

[0216] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. It can be used for the electrode 21 and the second electrode 22.

[0217] Specifically, aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten a metal element selected from nickel, silver, or manganese; a composite containing the above-mentioned metal element; Gold or an alloy combining the above-mentioned metal elements can be used.

[0218] Alternatively, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium Conductive oxides such as zinc oxide doped with ammonium can be used.

[0219] Alternatively, graphene or graphite can be used. The graphene-containing film can be For example, the graphene oxide film can be formed by reducing a film containing the graphene oxide. Examples of the method include a method of applying heat and a method of using a reducing agent.

[0220] Alternatively, a conductive polymer can be used.

[0221] The detection circuit 19 includes, for example, transistors M1 to M3. 9 includes wiring for supplying power supply potential and signals, such as wiring VPI, wiring CS, and scanning lines. G1, wiring RES, wiring VRES, and signal line DL. The actual configuration will be explained in detail in the fifth embodiment.

[0222] The detection circuit 19 may be disposed in an area that does not overlap with the window portion 14. For example, By arranging the wiring in a non-overlapping area, it is possible to This makes it easier to see what is nearby.

[0223] For example, transistors M1 to M2 that can be formed in the same process are It can be used for register M3.

[0224] The transistor M1 has a semiconductor layer, such as a Group 4 element, a compound semiconductor, or an oxide. Semiconductors can be used for the semiconductor layer. Specifically, semiconductors containing silicon, gallium, A semiconductor containing arsenic, an oxide semiconductor containing indium, or the like can be used.

[0225] Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is Explain in detail.

[0226] A conductive material can be applied to the wiring.

[0227] For example, inorganic conductive materials, organic conductive materials, metals, or conductive ceramics can be used for wiring. Specifically, it can be used for the first electrode 21 and the second electrode 22. The same materials can be applied.

[0228] Aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, A metal material such as iron, cobalt, copper, or palladium, or an alloy material containing such a metal material, is used as a scanning line. It can be used for G1, signal line DL, wiring VPI, wiring RES and wiring VRES.

[0229] The film formed on the substrate 16 may be processed to form the detection circuit 19 on the substrate 16 .

[0230] Alternatively, the detection circuit 19 formed on another substrate may be transferred to the substrate 16 .

[0231] Note that a manufacturing method of the detection circuit will be described in detail in Embodiment 5.

[0232] The flexible substrate 16 may be made of organic, inorganic, or a composite of organic and inorganic materials. This can be done.

[0233] 5 μm or more and 2500 μm or less, preferably 5 μm or more and 680 μm or less, more preferably 5 μm or more and 170 or less, more preferably 5 μm or more and 45 μm or less, more preferably 5 ... A material having a thickness of 45 μm or less, more preferably 8 μm or more and 25 μm or less, is used as the substrate 1. It can be used for 6.

[0234] Furthermore, a material that is inhibited from permeating impurities can be suitably used for the substrate 16. For example, Water vapor transmission rate of 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 ·day The following materials can be suitably used:

[0235] In addition, materials having approximately the same linear expansion coefficient can be suitably used for the substrate 16. For example, Expansion rate is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferably 1× 10 -5 A material having a solubility of 1 / K or less can be suitably used.

[0236] For example, an organic material such as a resin, a resin film, or a plastic film is used for the substrate 16. You can be there.

[0237] For example, inorganic materials such as metal plates or thin glass plates with a thickness of 10 μm to 50 μm are used. , can be used for the substrate 16.

[0238] For example, a metal plate, a thin glass plate, or a film of an inorganic material can be formed into a resin film using a resin layer. A composite material formed by laminating two or more materials, etc., can be used as the substrate 16.

[0239] For example, fibrous or particulate metal, glass or inorganic material is coated with a resin or resin film. A composite material in which the particles are dispersed can be used for the substrate 16.

[0240] For example, a thermosetting resin or an ultraviolet curing resin can be used for the resin layer.

[0241] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate A resin film or plate made of polyethylene terephthalate or acrylic resin can be used.

[0242] Specifically, alkali-free glass, soda-lime glass, potash glass, or crystal glass A sachet or the like can be used.

[0243] Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used. For example, silicon oxide, silicon nitride, silicon oxynitride, alumina film, etc. can be used.

[0244] Specifically, SUS or aluminum or the like having openings formed therein can be used.

[0245] Specifically, resins such as acrylic, urethane, epoxy, or siloxane bond-containing resins are used. Resins can be used.

[0246] For example, a flexible substrate 16b, a barrier film 16a that prevents the diffusion of impurities, and a substrate 16 The laminated body including the resin layer 16c and the barrier film 16a is placed on the substrate 16. It can be suitably used for the following purposes (see FIG. 11(A)).

[0247] Specifically, a 600 nm silicon oxynitride film and a 200 nm silicon nitride film are stacked. A film containing the laminated material can be used for the barrier film 16a.

[0248] Specifically, a silicon oxynitride film having a thickness of 600 nm, a silicon nitride film having a thickness of 200 nm, and a silicon nitride film having a thickness of 20 0 nm thick silicon oxynitride film, 140 nm thick silicon nitride oxide film and 100 nm thick oxide A film containing a laminated material in which silicon nitride films are laminated in this order can be used as the barrier film 16a. Cut.

[0249] Polyester, polyolefin, polyamide, polyimide, polycarbonate or a A resin film such as acrylic resin, a resin plate, a laminate, or the like can be used for the substrate 16b. .

[0250] For example, polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide Amide, polycarbonate or acrylic, urethane, epoxy or siloxane bonded A material containing a resin having the above properties can be used for the resin layer 16c.

[0251] A flexible protective substrate 17 and / or a protective layer 17p may be provided. The base material 17 or the protective layer 17p protects the input device 100 by preventing scratches.

[0252] For example, polyester, polyolefin, polyamide, polyimide, polycarbonate or Alternatively, a resin film such as an acrylic resin, a resin plate, or a laminate may be used as the protective substrate 17. This can be done.

[0253] For example, a hard coat layer or a ceramic coat layer can be used for the protective layer 17p. Specifically, a layer containing UV curable resin or aluminum oxide is overlaid on the second electrode 22. It may be formed at a position.

[0254] The display unit 501 includes a plurality of pixels 502 arranged in a matrix (see FIG. 10(C)). see).

[0255] For example, pixel 502 includes subpixel 502B, subpixel 502G, and subpixel 502R, Each sub-pixel comprises a display element and a pixel circuit for driving the display element.

[0256] The sub-pixel 502B of the pixel 502 is disposed at a position overlapping the colored layer CFB, and the sub-pixel 50 The sub-pixel 2G is disposed at a position overlapping with the colored layer CFG, and the sub-pixel 502R is disposed at a position overlapping with the colored layer CFR. It is placed in a location.

[0257] In this embodiment, an organic electroluminescence element that emits white light is used as a display element. Although a case where it is applied will be described, the display element is not limited to this.

[0258] For example, organic electroluminescence (OLED) devices emit different colors of light so that each sub-pixel emits a different color of light. A light-emitting element may be applied to each sub-pixel.

[0259] In addition, the display unit may be an active matrix type having active elements in the pixels, or A passive matrix system that does not have active elements can be used.

[0260] In the active matrix system, the active element (active element, nonlinear element) is a transistor. Use not only transistors but also various active elements (active elements, nonlinear elements) For example, MIM (Metal Insulator Metal) or TF It is also possible to use a thin film diode (D). Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size, It is possible to achieve low power consumption and high brightness.

[0261] Active elements (active elements, non-linear elements) other than the active matrix type It is also possible to use a passive matrix type that does not use active elements (active elements Since it does not use nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Alternatively, active elements (active elements, nonlinear elements) can be used. Therefore, the aperture ratio can be improved, and it is possible to achieve low power consumption or high brightness. can be done.

[0262] A flexible material can be used for the substrate 510. For example, A material capable of doing this can be applied to the substrate 510.

[0263] For example, a flexible substrate 510b, an insulating layer 510a that prevents the diffusion of impurities, and a substrate 510b are provided. and an adhesive layer 510c that bonds the insulating layer 510a to the insulating layer 510b. It can be suitably used for the plate 510 (see FIG. 11(A)).

[0264] The sealing layer 560 bonds the base material 16 and the substrate 510 together. The sealing layer 560 has a higher elasticity than air. In addition, when light is extracted to the sealing layer 560 side, the sealing layer 560 is used as an optical bonding layer. It has a function.

[0265] The pixel circuitry and light emitting element (e.g., light emitting element 550R) are located between substrate 510 and base material 16. .

[0266] Subpixel 502R includes light-emitting module 580R.

[0267] Subpixel 502R can supply power to light-emitting element 550R and light-emitting element 550R. The light-emitting module 580R includes a pixel circuit including a transistor 502t that can emit light. It includes a photo element 550R and an optical element (for example, a colored layer CFR).

[0268] The light-emitting element 550R includes a lower electrode, an upper electrode, and a light-emitting organic compound between the lower electrode and the upper electrode. It has a layer containing the substance.

[0269] The light emitting module 580R has a colored layer CFR in the direction in which light is extracted. Any material may be used as long as it transmits light having a wavelength, such as red, green, or blue. It is to be noted that the other sub-pixels may be provided with colored layers. The light emitted by the light emitting element is emitted without passing through the colored layer. It may be possible.

[0270] In addition, when the sealing layer 560 is provided on the side from which light is extracted, the sealing layer 560 It contacts 550R and the colored layer CFR.

[0271] The colored layer CFR is located at a position overlapping the light emitting element 550R. A part of the emitted light passes through the colored layer CFR and travels to the light emitting module 58 in the direction of the arrow shown in the figure. It is ejected outside 0R.

[0272] A light-shielding layer BM is provided so as to surround the colored layer (for example, the colored layer CFR).

[0273] The pixel circuit includes an insulating film 521 that covers a transistor 502t. It can be used as a layer for flattening unevenness caused by pixel circuits. A stacked film including a layer that can suppress the diffusion of the insulating film 521 can be used. This makes it possible to prevent a decrease in reliability of the transistor 502t and the like due to unexpected diffusion of impurities.

[0274] A lower electrode is disposed on the insulating film 521, and a partition wall 528 is disposed on the insulating film 521 so as to overlap the edge of the lower electrode. It is disposed on the veneer 521 .

[0275] The lower electrode sandwiches a layer containing a light-emitting organic compound between the lower electrode and the upper electrode to form a light-emitting element (e.g., The pixel circuit supplies power to the light emitting element.

[0276] Furthermore, spacers for controlling the distance between the base material 16 and the substrate 510 are provided on the partition wall 528 .

[0277] The scanning line driving circuit 503g(1) includes a transistor 503t and a capacitor 503c. The transistors that can be formed on the same substrate as the pixel circuits in the same process are used as the driver circuits. It can be used for.

[0278] The detection signal DATA supplied by the detection unit 20U can be converted and supplied to the FPC1. Various circuits that can be used for the converter CONV (see Figs. 10(A) and 10(B)). 1(A)).

[0279] For example, transistor M4 can be used for converter CONV.

[0280] <Other Configurations> The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixels. The stop layer 567p may be, for example, a circular polarizer.

[0281] The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is connected to the wiring 511. 1. In addition, F PC2 is electrically connected to terminal 519.

[0282] Incidentally, a printed wiring board (PWB) may be attached to the FPC 2.

[0283] The display portion 501 has wiring such as scanning lines, signal lines, and power supply lines. It can be used.

[0284] Specifically, aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten , a metal element selected from nickel, yttrium, zirconium, silver, or manganese, An alloy containing the above-mentioned metal elements or an alloy combining the above-mentioned metal elements is used. In particular, aluminum, chromium, copper, tantalum, titanium, molybdenum, It is preferable that the alloy contains one or more elements selected from the group consisting of copper and manganese. Gold is suitable for microfabrication using wet etching methods.

[0285] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium nitride film, Two-layer structure with a tungsten film laminated on a titanium nitride film, two-layer structure with a tungsten film laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium film or a tungsten nitride film; A three-layer structure in which an aluminum film is layered on top of the titanium film, and a titanium film is then formed on top of that. etc. can be used.

[0286] Specifically, titanium, tantalum, tungsten, molybdenum, chromium, etc. are deposited on an aluminum film. , neodymium, scandium, or a film of an element selected from these. A laminated structure in which an alloy film or a nitride film is laminated can be used.

[0287] Alternatively, a light-transmitting conductive material containing indium oxide, tin oxide, or zinc oxide may be used. good.

[0288] <Modifications of the Display> Various transistors can be applied to the display 501.

[0289] A configuration in which a bottom-gate transistor is applied to the display portion 501 is shown in FIG. This is illustrated in FIG. 11(B).

[0290] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is shown in FIG. The present invention can be applied to the transistors 502t and 503t.

[0291] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing. is applied to the transistor 502t and the transistor 503t shown in FIG. 11(B). It is possible.

[0292] A structure in which a top-gate transistor is applied to the display portion 501 is shown in FIG. Illustrated.

[0293] For example, polycrystalline silicon or a single crystal silicon film transferred from a single crystal silicon substrate, etc. The semiconductor layer including the transistor 502t and the transistor 502t shown in FIG. Can be applied to 03t.

[0294] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0295] (Embodiment 5) In this embodiment, a detection element that can be used for the detection unit of the input / output device of one embodiment of the present invention is described. The configuration and driving method of the sensing circuit will be described with reference to FIG.

[0296] FIG. 12 illustrates the configuration and driving method of the detection circuit 19 and the converter CONV according to one embodiment of the present invention. This is an explanatory diagram.

[0297] FIG. 12(A) is a circuit diagram illustrating the configuration of the detection circuit 19 and the converter CONV according to one embodiment of the present invention. 12(B-1) and 12(B-2) are timing diagrams for explaining the driving method. This is a chart.

[0298] In one embodiment of the present invention, the detection circuit 19 has a gate electrically connected to the first electrode 21 of the detection element C. The first electrode is electrically connected to a wiring VPI that can supply a ground potential, for example. The first transistor M1 is connected to the first power supply (see FIG. 12(A)).

[0299] The gate is electrically connected to a scanning line G1 that can supply a selection signal. The electrode is electrically connected to the second electrode of the first transistor M1, and the second electrode is, for example, a detection a second transistor electrically connected to a signal line DL capable of supplying a detection signal DATA; The configuration may include a station M2.

[0300] The gate is electrically connected to a wiring RES that can supply a reset signal. The first electrode is electrically connected to the first electrode 21 of the sensing element C, and the second electrode is connected to, for example, a ground potential. a third transistor M3 electrically connected to a wiring VRES that can supply a voltage; It may be configured to include:

[0301] The capacitance of the sensing element C increases when an object comes close to the first electrode 21 or the second electrode 22, for example. or the distance between the first electrode 21 and the second electrode 22 changes. This allows the detector 20 to provide a detection signal DATA based on the change in capacitance of the detector element C. It is possible.

[0302] The detector 20 also generates a control signal that can control the potential of the second electrode of the detector element C. The power supply is provided with wiring CS.

[0303] The first electrode 21 of the detection element C, the gate of the first transistor M1, and the third transistor M2 are connected to each other. The node to which the first electrode of the transistor is electrically connected is called node A.

[0304] The lines VRES and VPI can supply, for example, a ground potential, and the lines VPO and The wiring BR can supply, for example, a high power supply potential.

[0305] The wiring RES can supply a reset signal, and the scanning line G1 can supply a selection signal. The wiring CS supplies a control signal for controlling the potential of the second electrode 22 of the sensing element. It is possible.

[0306] The signal line DL can supply the detection signal DATA, and the terminal OUT can supply the detection signal DA A converted signal can be provided based on the TA.

[0307] In addition, various circuits that can convert the detection signal DATA and supply it to the terminal OUT are available. , can be used for the converter CONV. For example, the converter CONV can be electrically connected to the detection circuit 19. By connecting them in series, a source follower circuit or a current mirror circuit can be configured. It may be possible to do so.

[0308] Specifically, a converter CONV using a transistor M4 is used to create a source follower circuit. It should be noted that the first to third transistors M1 to M3 can be configured as follows (see FIG. 12A). Even if a transistor that can be manufactured using the same process as transistor M3 is used for transistor M4, good.

[0309] The transistors M1 to M3 each include a semiconductor layer. A compound semiconductor or an oxide semiconductor can be used for the semiconductor layer. Semiconductors containing gallium arsenide, semiconductors containing indium, or oxide semiconductors containing indium can be applied.

[0310] Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is Explain in detail.

[0311] <Method of Driving the Detection Circuit 19> A method of driving the detection circuit 19 will be described. Step 1: In the first step, the third transistor is made conductive and then made non-conductive. A reset signal is supplied to the gate, and the potential of the first electrode of the detection element C is set to a predetermined potential ( See period T1 in Figure 12(B-1).

[0312] Specifically, the reset signal is supplied to the wiring RES. The transistor sets the potential of the node A to, for example, the ground potential (see FIG. 12A).

[0313] <Second Step> In the second step, the second transistor M2 is made conductive. A selection signal is supplied to the gate, and the second electrode of the first transistor is electrically connected to the signal line DL. To be continued.

[0314] Specifically, a selection signal is supplied to the scanning line G1. The second electrode of the first transistor M2 is electrically connected to the signal line DL (see FIG. 12). (See (B-1) Period T2).

[0315] <<Third Step>> In the third step, a control signal is supplied to the second electrode of the sensing element. , a potential that changes based on the control signal and the capacitance of the detection element C is applied to the first transistor M1. Supply to the gate.

[0316] Specifically, a rectangular control signal is supplied to the wiring CS. The voltage supplied to the sensing element C increases the potential of the node A based on the capacitance of the sensing element C (see Figure 1). 12(B-1) See the second half of period T2).

[0317] For example, if the sensing element is placed in the air, something with a higher dielectric constant than the air will When the capacitance of the sensing element C is placed close to the second electrode 22 of the sensing element C, the capacitance of the sensing element C appears to be large. .

[0318] As a result, the change in the potential of node A caused by the rectangular control signal is The noise level is smaller than when the objects are not placed close together (see the solid line in Figure 12(B-2)). .

[0319] <<Fourth Step>> In the fourth step, the potential of the gate of the first transistor M1 is The signal resulting from the change is supplied to the signal line DL.

[0320] For example, the change in the current caused by the change in the potential of the gate of the first transistor M1 is transmitted to the signal line D Supply to L.

[0321] The converter CONV converts a change in the current flowing through the signal line DL into a change in voltage and supplies it.

[0322] <<Fifth Step>> In the fifth step, a selection is made to make the second transistor non-conductive. A select signal is supplied to the gate.

[0323] Note that the content (or even a part of the content) described in one embodiment may be used in conjunction with that embodiment. Other content (or even part of content) described in the above, and / or one or more other implementations The content (or part of the content) described in the form of You can do things like:

[0324] The contents described in the embodiments are explained in detail in each embodiment using various drawings. This refers to the content that is stated or the content that is stated using the text in the specification.

[0325] In addition, a drawing (or a part thereof) described in one embodiment may be different from another part of the drawing, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part thereof) described in another embodiment of the present invention , and many more diagrams can be constructed.

[0326] In addition, regarding the contents not specified in the drawings or text in the specification, Alternatively, the upper limit of a certain value can be set. When a numerical range is listed, such as a lower limit, you can narrow the range arbitrarily. Or, by excluding one point within the scope, one aspect of the invention that excludes part of the scope is defined. As a result, for example, the prior art can be included within the technical scope of one aspect of the present invention. It can be stipulated that it will not be included.

[0327] As a specific example, a circuit diagram using first to fifth transistors in a circuit is shown below. In that case, the circuit does not have a sixth transistor. Alternatively, the circuit may be defined as an invention that does not have a capacitance element. Furthermore, it is possible to specify that the circuit has a specific connection structure. The invention can be configured by specifying that the semiconductor device does not have a sixth transistor. Alternatively, it is specified that the circuit does not have a capacitive element having a specific connection structure. For example, the gate of the first transistor is connected to the gate of the second transistor. It is possible to define the invention as not having a sixth transistor. Alternatively, for example, a capacitor element having a first electrode connected to the gate of the third transistor may be provided. It is possible to define the invention as not having

[0328] As another example, for a certain value, for example, "a certain voltage is 3V or more and 10V or less." In that case, for example, if a certain voltage is -2V, It is possible to specify one aspect of the invention as "excluding cases where the voltage is greater than or equal to 1 V and less than or equal to 1 V." For example, one aspect of the invention may be defined as excluding cases where a certain voltage is 13 V or higher. It is also possible to define the invention as requiring that the voltage be between 5V and 8V. It is possible to define the invention as having a voltage of approximately 9V. For example, the voltage is between 3V and 10V, but excluding the case where it is 9V. It is also possible to define an invention as follows: Even if it is stated that "it is preferable that these conditions are met" or "it is preferable that these conditions are met," , and certain values ​​are not limited to those descriptions. That is, "preferred," "preferred," etc. However, even if it is described as such, it is not necessarily limited to such description.

[0329] As another specific example, regarding a certain value, for example, "a certain voltage is preferably 10V" may be used. In that case, for example, if a certain voltage is between -2V and 1V, It is possible to define one aspect of the invention as "except when One aspect of the invention can be defined as excluding cases where the voltage is 13V or higher.

[0330] Another example is when describing the properties of a substance, for example, "a certain film is an insulating film." In that case, it is assumed that the insulating film is an organic insulating film. Alternatively, for example, the insulating film may be an inorganic insulating film. It is possible to define one aspect of the invention as excluding the case where the membrane is a velum. It is possible to define one aspect of the invention as excluding cases where the film is a conductive film. For example, it is possible to define one aspect of the invention as excluding cases where the film is a semiconductor film. It is Noh.

[0331] As another example, regarding a certain laminated structure, for example, "a certain film is present between film A and film B" In that case, for example, if the film is a stack of four or more layers, Or, for example, it is possible to define the invention as excluding the case of a film A and its It is possible to define the invention as excluding cases where a conductive film is provided between the film and the .

[0332] It should be noted that one aspect of the invention described in this specification etc. may be carried out by various people. However, the implementation may involve multiple people. For example, in the case of a transmission and reception system, Company A manufactures and sells the transmitter, and Company B manufactures the receiver. Another example is a device that has a transistor and a light-emitting element. In the case of a light-emitting device, the semiconductor device in which the transistor is formed is manufactured and sold by Company A. Company B then purchases the semiconductor device and deposits a light-emitting element on it. In some cases, the light-emitting device is completed after the manufacturing process.

[0333] In such a case, the inventor may claim patent infringement against either Company A or Company B. In other words, it is possible to create an embodiment of the invention that is only implemented by Company A. It is possible to construct an invention that is only implemented by Company B as a separate invention. In addition, it is possible to assert patent infringement against Company A or Company B. It can be determined that one aspect of the invention is clear and described in the present specification, etc. For example, in the case of a transmission and reception system, there are descriptions for only the transmitter and only the receiver. Even if the description of such a case is not included in the present specification, the transmitter alone constitutes one aspect of the invention. The receiver alone can constitute an aspect of another invention, and one aspect of those inventions can be is clear and can be judged to be described in the present specification etc. Another example is In the case of a light-emitting device having a transistor and a light-emitting element, the transistor is formed The present invention is not limited to the description of only a semiconductor device having a light emitting element or the description of only a light emitting device having a light emitting element. Even if not specified in the specification, one embodiment of the invention can be realized by a semiconductor device having a transistor formed therein. One embodiment of the present invention can be configured by a light-emitting device having only a light-emitting element. Therefore, it is considered that one aspect of the invention is clear and described in the present specification, etc. can be done.

[0334] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of elements such as capacitors and resistors, the connection destination must be specified. However, a person skilled in the art may be able to compose an aspect of the invention. Even if the destination is not specified, one aspect of the invention can be said to be clear. When the content is described in this specification, etc., one aspect of the invention that does not specify the connection destination is In particular, if the terminals are connected to multiple If such a case is considered, there is no need to limit the connection destination of the terminal to a specific location. Therefore, there are active elements (transistors, diodes, etc.) and passive elements (capacitance elements, resistance elements, etc.) By specifying the connection destinations of only some of the terminals possessed by a device, etc., It may be possible to configure one aspect.

[0335] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art. It may be possible for a person skilled in the art to identify an invention. If the function is specified, a person skilled in the art may be able to identify the invention. Thus it can be said that if the function is specified, one aspect of the invention is clear. And in some cases, it may be possible to determine that one aspect of the invention with the specified function is described in this specification or the like. Therefore even if the function of a certain circuit is not specified, if the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or even if the connection destination of a certain circuit is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0336] In addition, in this specification or the like, in the figures or texts described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can be considered to constitute one aspect of the invention. And it can be said that one aspect of the invention is clear. Therefore for example, in drawings or texts in which one or more of active elements (such as transistors and diodes), wirings, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is assumed that a part thereof can be extracted to constitute one aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M ( M is an integer and M < N) circuit elements (such as transistors and capacitive elements) are extracted to form one aspect of the invention. Therefore, for example, in the drawings or texts in which one or more of active elements (such as transistors and diodes), wirings, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is assumed that a part thereof can be extracted to constitute one aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M ( M is an integer and M < N) circuit elements (such as transistors and capacitive elements) are extracted to form one aspect of the invention. M is an integer and M < N) circuit elements (such as transistors and capacitive elements) are extracted to form one aspect of the invention. ​​​​​​​It is possible to constitute an aspect. As another example, it is constituted with N (N is an integer) layers From the cross-sectional view thus formed, M (M is an integer and M < N) layers are extracted to constitute one aspect of the invention is possible. As yet another example, from a flowchart constituted with N (N is an integer) elements M (M is an integer and M < N) elements are extracted to constitute one aspect of the invention is possible. As yet another example, from a sentence described as "A has B, C, D, E, or F", some elements are arbitrarily extracted to obtain "A has B and E", "A has E and F", "A has C, E and F", or "A has B, C, D and E", etc., to constitute one aspect of the invention is possible.

[0337] In addition, in this specification etc., in a figure or sentence described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, in a figure or sentence described in a certain embodiment, when at least one specific example is described, the upper concept of that specific example is also disclosed as one aspect of the invention and it is possible to constitute one aspect of the invention. And it can be said that one aspect of that invention is clear.

[0338] In addition, in this specification etc., at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and it is possible to constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described using a sentence, that content is disclosed as one aspect of the invention and it is possible to constitute one aspect of the invention. ​​​​​ Similarly, a partial view of the drawings can also be considered as an embodiment of the invention. This is disclosed as an embodiment of the present invention. It can be said that one aspect of the invention is clear. [Explanation of symbols]

[0339] 1 FPC 2 FPC 14 Window section 16 Base material 16a Barrier film 16b Base material 16c resin layer 17 Protective base material 17p protective layer 19 Detection circuit 20 Detector 20U detection unit 21 electrodes 22 electrodes 23 Insulating layer 100 Input Device 200 Electronic equipment 201 Display section 202a Support 202b Support 202c support 202d Cover 202e Cover part 202f Frame 202g frame 203a Hinge 203b Hinge 207 Case 209 Chain Line 211a Rotation axis 211b Rotation axis 211c axis 301 Display section 302 pixels 302B subpixel 302G subpixel 302R subpixel 302t transistor 303c capacity 303g(1) Scanning line driver circuit 303g(2) Imaging pixel drive circuit 303s(1) Image signal line driver circuit 303s(2) Image signal line driver circuit 303t transistor Gate 304 308 imaging pixels 308p photoelectric conversion element 308t transistor 309 FPC 311 Wiring 319 terminal 321 Insulating Layer 328 Bulkhead 329 Spacer 350R light emitting element 351R lower electrode 352 Upper electrode 353 EL layer 353a EL layer 353b EL layer 354 Middle Class 360 sealing layer 367BM light shielding layer 367p anti-reflection layer 367R colored layer 380B Light Emitting Module 380G light emitting module 380R Light Emitting Module 390 Touch Panel 500 I / O devices 501 Display section 502 pixels 502B subpixel 502G subpixel 502R subpixel 502t transistor 503c capacity 503g Scanning line driver circuit 503t transistor 505 touch panel 509 FPC 510 board 510a Insulating layer 510b base material 510c adhesive layer 511 Wiring 519 terminal 521 Insulating film 528 Bulkhead 550R light emitting element 560 Sealing Layer 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 PCB 570a Insulating layer 570b flexible substrate 570c ​​adhesive layer 580R Light Emitting Module 590 PCB 591 Electrode 592 Electrode 593 Insulating Layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connection Layer 801 board 803 board 804 Light-emitting part 806 Drive circuit section 808 FPC 811 Adhesive layer 813 Insulation layer 814 Conductive layer 815 Insulation layer 816 Conductive layer 817 Insulation layer 817a Insulating layer 817b Insulating layer 820 transistors 821 Insulation layer 822 transistor 823 Sealing layer 824 Sealing layer 825 Connector 827 Spacer 830 Light-emitting element 831 Lower electrode 833 EL layer 835 Upper electrode 841 Adhesive layer 843 Insulation Layer 845 Colored layer 847 Light blocking layer 849 Overcoat 857 Conductive layer 857a Conductive layer 857b Conductive layer BR wiring CFB colored layer CFG colored layer CFR colored layer CS wiring G1 scan line M1 transistor M2 transistor M3 transistor M4 transistor RES wiring OUT terminal T1 period T2 period VPI wiring VPO wiring VRES wiring

Claims

1. A foldable electronic device, First to third supports; a first hinge between the first support and the second support; a second hinge between the second support and the third support; A flexible light-emitting panel; A first cover portion; A second cover portion, In an unfolded state, a display portion of the light-emitting panel has a first region overlapping with the first support, a second region overlapping with the second support, and a third region overlapping with the third support; In a folded state, the second region has a region overlapping with each of the first support and the third support, When the first hinge rotates and the light-emitting panel is bent, a distance between the first cover portion and a first end portion of the light-emitting panel increases, When the second hinge rotates and the light-emitting panel is bent, a distance between the second cover portion and a second end portion of the light-emitting panel increases, An electronic device, wherein in a folded state, the first cover portion has an area in contact with the second cover portion.

2. A foldable electronic device, First to third supports; a first hinge between the first support and the second support; a second hinge between the second support and the third support; A flexible light-emitting panel; A first cover portion; A second cover portion, In an unfolded state, a display portion of the light-emitting panel has a first region overlapping with the first support, a second region overlapping with the second support, and a third region overlapping with the third support; In a folded state, the second region has a region overlapping with each of the first support and the third support, In the folded state, the first support does not have an area overlapping with the third support, When the first hinge rotates and the light-emitting panel is bent, a distance between the first cover portion and a first end portion of the light-emitting panel increases, When the second hinge rotates and the light-emitting panel is bent, a distance between the second cover portion and a second end portion of the light-emitting panel increases, An electronic device, wherein in a folded state, the first cover portion has an area in contact with the second cover portion.

Images