Cup, liquid treatment device and liquid treatment method

Abstract

To suppress a bound of a processing liquid scattered from a substrate to the substrate in an inner peripheral surface of a cup.SOLUTION: A cup surrounding a substrate for performing a liquid processing of the substrate, is structured by a first groove provided so as to be extended to a vertical direction in an inner peripheral surface of the cup; and a plurality of second grooves in which each one end is provided so as to be connected to the first groove, and each cross section in view of them toward an extension direction is smaller than that of the first groove.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a cup, a liquid processing apparatus, and a liquid processing method. [Background technology]

[0002] In the manufacturing process of semiconductor devices, liquid processing is performed on semiconductor wafers (hereinafter, referred to as wafers). This liquid processing includes a process in which a processing liquid is supplied to a wafer stored in a cup. Patent Document 1 shows that the inner peripheral surface of the cup is roughened and coated with a hydrophilic coating. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-138089 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to prevent processing liquid splashed from a substrate from bouncing back onto the substrate from the inner peripheral surface of a cup when the substrate is subjected to liquid processing enclosed in the cup. [Means for solving the problem]

[0005] The cup of the present disclosure is a cup that surrounds a substrate for liquid processing of the substrate, A first groove extending longitudinally on an inner circumferential surface of the cup; a plurality of second grooves each having one end connected to the first groove, each having a cross-sectional area smaller than that of the first groove as viewed in the extension direction; Equipped with. Effect of the Invention

[0006] ADVANTAGEOUS EFFECT OF THE DISCLOSURE When liquid processing is performed on a substrate enclosed in a cup, the present disclosure can suppress processing liquid splashed from the substrate from bouncing back onto the substrate from the inner peripheral surface of the cup. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a vertical cross-sectional side view of a development device including a cup according to an embodiment of the present disclosure. [Diagram 2] FIG. [Diagram 3] FIG. 2 is a vertical sectional side view of the developing device. [Figure 4] FIG. 2 is a vertical sectional side view of the developing device. [Diagram 5] FIG. 4 is a plan view showing the inner peripheral surface of the cup. [Figure 6] FIG. 4 is a vertical cross-sectional view including a groove formed on the inner circumferential surface. [Figure 7] FIG. 4 is a vertical cross-sectional view including a groove formed on the inner circumferential surface. [Figure 8] FIG. 4 is a vertical cross-sectional view including a groove formed on the inner circumferential surface. [Figure 9] FIG. 4 is a vertical cross-sectional view including a groove formed on the inner circumferential surface. [Figure 10] FIG. 4 is a schematic diagram showing a liquid flow on the inner circumferential surface. [Figure 11] FIG. 4 is a schematic vertical cross-sectional view showing the groove. [Figure 12] FIG. 2 is a plan view of a wafer to be processed in the developing device. [Figure 13] FIG. 4 is an explanatory diagram showing the state of the inner circumferential surface. [Figure 14] FIG. 4 is an explanatory diagram showing the state of the inner circumferential surface. [Figure 15] 13 is a plan view showing another configuration of the groove on the inner circumferential surface. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] An overview of a developing apparatus 1, which is an example of a liquid processing apparatus, will be described. The developing apparatus 1 includes a cup 3 according to an embodiment of the present disclosure. In the developing apparatus 1, a developing process is performed in which a developing solution is supplied to a wafer W, which is a substrate, to resolve a resist pattern on the surface of the wafer W, and a cleaning process is performed following the developing process. In the cleaning process, the developing solution is removed by supplying a cleaning solution, such as pure water, to the surface of the rotating wafer W.

[0009] The above-mentioned developing and cleaning processes are performed with the wafer W surrounded by the cup 3, preventing each liquid from scattering onto each part of the apparatus, and each used liquid flows from the cup 3 to a drainage path for removal. Then, droplets of the cleaning liquid scattered from the wafer W due to the rotation of the wafer W during the cleaning process collide with the inner peripheral surface of the cup 3. A pattern consisting of grooves is formed on the inner peripheral surface. The pattern causes the droplets to form a liquid film, and the droplets that subsequently collide with the inner peripheral surface are captured by the liquid film. The pattern is configured so that the cleaning liquid that constitutes the liquid film can be discharged below the cup so that the liquid film can be maintained by an appropriate amount of cleaning liquid during the cleaning process.

[0010] The developing device 1 will be described below with reference to the vertical cross-sectional side view of Fig. 1 and the plan view of Fig. 2. The developing device 1 is equipped with a spin chuck 11 as a mounting portion for mounting a wafer W. The spin chuck 11 holds the wafer W horizontally by adsorbing the central portion of the back surface of the wafer W. The spin chuck 11 is connected to a rotation mechanism 13 via a vertically extending shaft portion 12, and rotates around a vertical axis while holding the wafer W. The rotation of the spin chuck 11 causes the wafer W to rotate around its center.

[0011] The cup 3 will now be described. The cup 3 is located in an outer region of the wafer W held by the spin chuck 11 in plan view, and includes a body portion 31, an inclined wall 32, a bottom portion 33, an inner peripheral wall 35, an annular portion 36, and a descending wall 38. These portions are configured as annular or cylindrical members whose central axes coincide with each other in plan view. This central axis coincides with the rotation axis of the spin chuck 11 in plan view.

[0012] The body 31 is provided outside the wafer W placed on the spin chuck 11 in a plan view, and is configured as a vertically standing cylinder. The inner peripheral surface of the body 31 is indicated as 31A. The inner peripheral surface 31A is a third height region of the inner peripheral surface of the cup 3, and is configured as a smooth surface without the above-mentioned grooves or the unevenness 53 caused by sandblasting described later. The upper end side of the body 31 is configured as an inclined wall 32 by inclining so as to extend obliquely upward toward the central axis of the body 31. The lower end and the upper end of the inclined wall 32 are located below and above the wafer W held by the spin chuck 11, respectively. Therefore, the inclined wall 32, together with the body 31, constitute the side wall and inner peripheral surface of the cup 3. The above-mentioned groove pattern is formed in the inclined wall 32, and will be described in detail later.

[0013] The lower end of the body 31 extends horizontally toward the central axis of the body 31 to form a bottom 33 having an annular shape. A vertical partition wall 34 is provided on the upper surface of the bottom 33 to partition the bottom 33 into an outer peripheral region 33A on the peripheral side and an inner peripheral region 33B closer to the central axis of the body 31, and the partition wall 34 is configured in a cylindrical shape along the circumference of the bottom 33. A drain port 30 is opened in an area of ​​the bottom 33 facing the outer peripheral region 33A, and the developing solution and cleaning solution that flow from the wafer W into the cup 3 flow from the drain port 30 to a drain path and are removed. An exhaust port 39 for exhausting the inside of the cup 3 is opened in an area of ​​the bottom 33 facing the inner peripheral region 33B.

[0014] The inner peripheral edge of the bottom portion 33 protrudes vertically upward to form an inner peripheral wall 35. In addition, an annular portion 36 configured to surround the shaft portion 12 is provided, and the upper end of the inner peripheral wall 35 is in contact with the lower surface of the central portion in the width direction of the annular portion 36. The peripheral side of the annular portion 36 is provided with a guide portion 37 that is mountain-shaped in a vertical cross-sectional view and has an apex located below the peripheral portion of the wafer W. The peripheral end of this guide portion 37 extends vertically toward a position lower than the upper end of the partition wall 34, thereby forming a cylindrical descending wall 38, and the descending wall 38 is located outside the partition wall 34.

[0015] Three vertical pins 14 are provided so as to penetrate a portion of the annular portion 36 closer to the center than the guide portion 37. Each pin 14 is raised and lowered by a lifting mechanism 15 to transfer the wafer W between a transfer mechanism (not shown) and the spin chuck 11. A filter mechanism 16 is provided above the cup 3 and supplies air downward. The supply of air from the filter mechanism 16 and the exhaust of air from an exhaust port 39 in the cup 3 form a downward air current above the wafer W, and the above-mentioned developing process and cleaning process are performed in this state.

[0016] The air that has flowed into the cup 3 passes through a flow path (referred to as exhaust region 17) formed between the side surface of the wafer W and the inner circumferential surface of the inclined wall 32. The air further passes through a flow path (referred to as narrow flow path 18) between the inner circumferential surface 31A of the body 31 and the outer circumferential surface of the descending wall 38, and flows from the inner peripheral edge region 33B to the exhaust port 39 and is removed. Therefore, the narrow flow path 18 is a flow path located below and downstream of the exhaust region 17. The width A2 of the narrow flow path 18 is smaller than the width A1 of the exhaust region 17. Since the cup 3 is configured as described above, the exhaust region 17 and the narrow flow path 18 are circular rings, and the widths A1 and A2 described above are radial lengths of the rings.

[0017] The cup 3 is made of resin. The resin constituting the inner peripheral surface of the inclined wall 32 on which the pattern is formed has been hydrophilized and has carboxyl groups. More specifically, for example, the resin before the hydrophilization process has methyl groups, and these methyl groups are converted into carboxyl groups by the hydrophilization process through fluorination and oxidation as shown in the following formula 1. This hydrophilization process is performed on both the inside and outside of each of the grooves 41 to 43, 51, and 52 described below. Formula 1: -CH3+O2+F2→ -COF+H2O→ -COOH

[0018] The developing solution used in the developing device 1 is a strong base. Therefore, when the developing solution adheres to the inner peripheral surface of the inclined wall 32, the reaction of the following formula 2 occurs, and protons are released from the carboxyl groups to become carboxylate anions. The developing solution adheres to the inner peripheral surface by bouncing off the wafer W when it is supplied to the wafer W, or by scattering off the wafer W due to the centrifugal force of the rotation of the wafer W during the cleaning process. Since the cleaning solution (pure water) is a weak base, the generated carboxylate anions attract the cleaning solution due to the action of the charge of the carboxylate anions. Therefore, a liquid film of the cleaning solution is likely to be formed on the inner peripheral surface of the inclined wall 32. As shown in the following formula 3, the carboxylate anions are returned to carboxyl groups by the donation of protons from the cleaning solution. Therefore, when the wafers W sequentially transported to the developing device 1 are processed, the reactions of formulas 2 and 3 are repeated, and a liquid film is likely to be formed during the cleaning process of each wafer W. Equation 2: -COOH+OH - →-COO - Formula 3: -COO - +H2O → -COOH

[0019] The hydrophilization process shown in the above formula 1 is not performed on, for example, inner circumferential surface 31A of body 31 of cup 3, and the inner circumferential surface of body 31A is less hydrophilic (has a larger contact angle with the cleaning liquid) than the inner circumferential surface of inclined wall 32. As a result, after forming a liquid film on inclined wall 32, the cleaning liquid that flows down to inner circumferential surface 31A of body 31 of cup 3 quickly flows down and is discharged. This prevents the cleaning liquid from accumulating in narrow flow path 18 formed by inner circumferential surface 31A and further narrowing it, thereby preventing the processing of wafer W from being affected.

[0020] Also, EDTA (ethylenediaminetetraacetic acid) is mixed into the resin constituting the body 31 of the cup 3. Therefore, as shown in FIG. 3, metal particles M, which are impurities contained in the wafer W, are mixed into the developing solution or cleaning solution supplied to the wafer W and flow down from the wafer W. When the waste liquid (developing solution or cleaning solution) containing the particles M flows down the inner peripheral surface 31A of the body 31, it forms a complex with EDTA and is fixed to the inner peripheral surface 31A as shown in FIG. 4. That is, the waste liquid is purified so that the flowing M is removed, and the inflow of the waste liquid containing the particles M into the drain port 30 is suppressed, thereby suppressing metal contamination of the drain path. Therefore, it is easy to recover the developing solution and cleaning solution from the drain path and reuse them.

[0021] Instead of configuring inner circumferential surface 31A forming the side wall of cup 3 as the metal collecting surface, a film for collecting metals may be provided on inner circumferential surface 31A of body 31, and metals may be collected by this film. That is, in this case, the surface of the film is the metal collecting surface, and this film may also be configured to contain, for example, EDTA.

[0022] Meanwhile, the developing device 1 is provided with a developer supply nozzle 21 and a cleaning liquid supply nozzle 22 in order to perform the developing process and cleaning process described above. The developer supply nozzle 21 is connected to a developer supply mechanism 23. The developer supply mechanism 23 is provided with a valve and a developer storage section, and supplies and stops the developer from the storage section to the developer supply nozzle 21. That is, the supply of the developer from the developer supply nozzle 21 is controlled by the developer supply mechanism 23. The cleaning liquid supply nozzle 22 is connected to a cleaning liquid supply mechanism 24. The cleaning liquid supply mechanism 24 is provided with a valve and a cleaning liquid storage section, and supplies and stops the cleaning liquid from the storage section to the cleaning liquid supply nozzle 22. That is, the cleaning liquid supply mechanism 24 controls the supply of the cleaning liquid from the cleaning liquid supply nozzle 22. In FIG. 2, 21A and 22A respectively denote the discharge port of the developer supply nozzle 21 and the discharge port of the cleaning liquid supply nozzle 22.

[0023] Moreover, the developing solution supply nozzle 21 and the cleaning solution supply nozzle 22 are configured to be movable up and down and horizontally by being connected to driving mechanisms 25 and 26, respectively. With this configuration, the developing solution supply nozzle 21 and the cleaning solution supply nozzle 22 can move between a waiting area (not shown) outside the cup 3 where these nozzles are kept waiting and above the wafer W held on the spin chuck 11.

[0024] The developing device 1 is equipped with a control unit 10 configured by a computer, and a program stored in a storage medium such as a compact disc, a hard disk, a memory card, or a DVD is installed on the control unit 10. The installed program includes commands (steps) so that the control unit 10 outputs control signals to each part of the developing device 1. These control signals control the movement of each nozzle by the drive mechanisms 25 and 26, the rotation of the spin chuck 11 by the rotation mechanism 13, the supply and stop of the developing solution from the developing solution supply nozzle 21 by the developing solution supply mechanism 23, and the supply and stop of the cleaning solution from the cleaning solution supply nozzle 22 by the cleaning solution supply mechanism 24. As a result, the developing process and cleaning process are performed in the developing device 1.

[0025] The operation of the developing device 1 will be described. When the wafer W is transported onto the spin chuck 11 by the transport mechanism, the wafer W is placed on the spin chuck 11 via the pins 14 and held by suction. The developer supply nozzle 21 moves from a standby area outside the cup 3 to above the peripheral edge of the wafer W. As the wafer W rotates at a relatively low rotation speed, the developer supply nozzle 21 moves to above the center of the wafer W while discharging the developer onto the wafer W, so that the entire surface of the wafer W is covered with the developer. The developer supply nozzle 21 returns to the standby area, and the cleaning liquid supply nozzle 22 moves from the standby area to a position above the center of the wafer W.

[0026] As the wafer W rotates at a relatively high rotation speed, a cleaning liquid is discharged from the cleaning liquid supply nozzle 22 to the center of the wafer W, and the cleaning liquid spreads toward the peripheral edge of the wafer W by centrifugal force, washing and removing the developing liquid from the surface of the wafer W. Then, the cleaning liquid is also shaken off and removed from the wafer W by centrifugal force. After the supply of the cleaning liquid is stopped, the cleaning supply nozzle 2, which is the processing liquid supply unit, returns to the standby area, and the rotation of the wafer W stops. Then, the wafer W is transferred from the spin chuck 11 to the transfer mechanism via the pins 14, and the wafer W is carried out from the developing device 1. This series of operations is performed every time the wafer W is carried to the developing device 1.

[0027] Next, the configuration of the inner peripheral surface of the inclined wall 32 of the cup 3 will be further described with reference to Fig. 5. Fig. 5 shows the inner peripheral surface as seen from inside the cup 3, and more specifically, it is a plane view of the entire inner peripheral surface of the inclined wall 32, with a portion cut out in the circumferential direction and the curvature eliminated. For example, the inner peripheral surface of the inclined wall 32 has the above-mentioned groove pattern formed to be rotationally symmetric, and therefore, the pattern is formed in each of the multiple portions of the inner peripheral surface in the same manner as shown in Fig. 5. Hereinafter, unless otherwise specified, the inner peripheral surface of the inclined wall 32 will be described assuming that the curvature is changed and the surface is shown as a plane as shown in Fig. 5.

[0028] The inner peripheral surface of the inclined wall 32 is divided into three height regions along the horizontal plane, which are designated as a lower region R1, a middle region R2, and an upper end region R3 from bottom to top. The groove patterns are different among these regions R1 to R3, and no pattern is formed in the upper end region R3. The lower end of the middle region R2 is located above the surface of the wafer W placed on the spin chuck 11. Therefore, the lower region R1 is formed from a position above the surface of the wafer W to a position below the wafer W. The lower region R1 corresponds to a first height region, the middle region R2 corresponds to a second height region, and the upper end region R3 corresponds to a fourth height region.

[0029] The functions of the regions R1 to R3 will be outlined below. The lower region R1 is configured to form a liquid film from droplets of the cleaning liquid, collect the droplets using the liquid film, and discharge excess cleaning liquid downward, as described above. In addition to the cleaning liquid that splashes directly from the wafer W into the lower region R1, the cleaning liquid that splashes into the upper intermediate region R2 also travels to the lower region R1 and is discharged downward from the lower region R1.

[0030] In the intermediate region R2, a liquid film is also formed from droplets, but the intermediate region R2 is also configured to efficiently collect mist, which is fine droplets, to form a liquid film. Because the mist tends to flow upwards towards the wafer W, the intermediate region R2 is disposed at a position higher than the wafer W, that is, at a height closer to the opening of the cup 3, as described above. Since the intermediate region R2 is disposed closer to the open edge of the cup 3, the pattern shape is such that it is less likely to disturb the downward air current formed above the wafer W. In the following explanation, relatively large droplets may be simply referred to as droplets to distinguish them from mist.

[0031] The upper end region R3 is configured to have a lower effect of collecting droplets and mist of the cleaning liquid compared to the lower side region R1 and the middle region R2. This is because if droplets adhere to the upper end region R3 including the upper end of the cup 3 or if a liquid film is formed, the liquid may go over the open end of the cup 3 and flow around to the outside of the cup 3 due to the surface tension of the liquid, and may then flow down the outside. In other words, the upper end region R3 is provided to prevent the outside of the cup 3 from being contaminated by the cleaning liquid.

[0032] Because of the above-mentioned role, the vertical length of the upper end region R3 may be relatively small. Therefore, between the middle region R2 and the upper end region R3, the middle region R2 has a larger vertical length so that the area of ​​the middle region R2 is increased to obtain a high collection effect of the cleaning liquid. Also, as described above, the middle region R2 is patterned so as not to disturb the downward air current, so that the lower region R1 is more likely to discharge the liquid downward between the middle region R2 and the lower region R1. In this example, the lower region R1 has a larger vertical length and a larger area between the lower region R1 and the middle region R2. Therefore, the configuration allows the liquid to be efficiently discharged downward.

[0033] The lower region R1 will be described in detail below. Three types of grooves are formed in the lower region R1, and for convenience of explanation, they are referred to as a main groove 41, a sub groove 42, and an auxiliary groove 43. These three grooves may be collectively referred to as grooves 41 to 43. There are many grooves 41 to 43 formed. The main groove 41 corresponds to the first groove, and the sub groove 42 corresponds to the second groove. In this example, the outer regions of the grooves 41 to 43 in the lower region R1 are smooth, and the unevenness 53 formed in the intermediate region R2 described later is not formed.

[0034] The main groove 41 and the auxiliary groove 43 extend linearly in the vertical direction and are inclined left and right with respect to the horizontal plane. More specifically, the lower side of each of the grooves 41, 43 is inclined leftward. The main grooves 41 and the auxiliary grooves 43 are formed parallel to each other and are arranged so that the main grooves 41 and the auxiliary grooves 43 are alternately repeated in the circumferential direction of the inclined wall 32. In FIG. 5, the angle of inclination of the extension direction of the grooves 41, 43 with respect to the horizontal plane (represented by a chain line) is shown as θ1, and this angle θ1 is, for example, 50° to 70°.

[0035] Sub-grooves 42 are formed so as to branch out from the left and right of each main groove 41. Therefore, one end of each of the multiple sub-grooves 42 is provided so as to sandwich the main groove 41 from the left and right and to be connected to the main groove 41. More specifically, a large number of sub-grooves 42 are connected from the left side of the main groove 41 at intervals in the extension direction of the main groove 41, and a large number of sub-grooves 42 are connected from the right side of the main groove 41 at intervals in the extension direction of the main groove 41. When the main groove 41 is viewed along the extension direction, one end of the left sub-groove 42 and one end of the right sub-groove 42 are alternately connected repeatedly at intervals in the extension direction. Therefore, the connection position of the left sub-groove 42 and the connection position of the right sub-groove 42 in the extension direction are different from each other.

[0036] Each of the sub grooves 42 is formed, for example, in a straight line. In the main groove 41, the sub grooves 42 provided on the left side in the extension direction are parallel to each other, and the sub grooves 42 provided on the right side in the extension direction are parallel to each other. If the upper side in the extension direction of the main groove 41 is the tip side, when viewed in the extension direction of the main groove 41, the other end side of the sub groove 42 extends toward the tip side in the extension direction with respect to one end side of the sub groove 42. The other end of the sub groove 42 is laterally connected to the auxiliary groove 43.

[0037] By connecting the sub-grooves 42 as described above, the auxiliary groove 43 can be seen as having the sub-grooves 42 branching out from the left and right sides, like the main groove 41. In addition, when viewed in the extension direction of the auxiliary groove 43, the other end of the sub-groove 42 connected from the left side and the other end of the sub-groove 42 connected from the right side are alternately positioned at intervals in the extension direction. Note that the connection position of the sub-groove 42 on the left side in the extension direction of the auxiliary groove 43 is different from the connection position of the sub-groove 42 on the right side. The sub-groove 42 has a role of collecting droplets therein and forming a liquid film. Therefore, with respect to the main groove 41 and the auxiliary groove 43, the dispersibility of the sub-groove 42 in the lower side region R1 is enhanced by arranging a large number of sub-grooves 42 on the left and right sides, and by forming the sub-grooves 42 to extend from different positions on the left and right sides in the extension direction. That is, the formation of the liquid film is prevented from remaining in a local position.

[0038] With the grooves 41 to 43 arranged as described above, when comparing the main groove 41 and the sub groove 42 in a unit area of ​​any size in each portion in the circumferential direction of the lower region R1, the sub groove 42 has a larger number density. If the main groove 41 and the sub groove 42 sandwiching the main groove 41 from the left and right are considered as one set, this set forms a tree-like groove with the main groove 41 as the trunk and the sub groove 42 as the branches. A plurality of such tree-like groove sets are provided in the circumferential direction of the lower region R1, and are connected to each other via the auxiliary grooves 43.

[0039] The grooves 41 to 43 will be described with reference to Figs. 6 and 7. Fig. 6 shows a cross section intersecting the extension direction of the main groove 41 and the auxiliary groove 43 and along the extension direction of the auxiliary groove 42, and Fig. 7 shows a cross section intersecting the extension direction of the auxiliary groove 42. If the width of the main groove 41 is L1, the width of the auxiliary groove 42 is L2, and the width of the auxiliary groove 43 is L3, then L1>L2=L3. If the depth of the main groove 41 is H1, and the depth of the auxiliary groove 43 is H3, then H1>H3. The depth of the auxiliary groove 42 increases from the other end side to the one end side so that the depth of one end connected to the main groove 41 is the same depth H1 as the main groove 41, and the depth of the other end connected to the auxiliary groove 43 is the same depth H2 as the auxiliary groove 43.

[0040] Since the grooves 41 to 43 have the widths and depths as described above, when comparing the cross-sectional areas of the grooves 41 to 43 as viewed in the extension direction, the cross-sectional area of ​​the main groove 41 is larger than those of the sub groove 42 and the auxiliary groove 43. The state of the lower side region R1 during the cleaning process will be described in detail later, but the liquid film is formed mainly by the sub groove 42, and the main groove 41 and the auxiliary groove 43 are used to discharge the liquid, and this discharge is mainly performed by the main groove 41. The sub groove 42 is formed to have the above-mentioned number density relationship with the main groove 41 so that it can reliably fulfill its role of forming the liquid film.

[0041] Next, the intermediate region R2 will be described. A main groove 51 and a sub groove 52 are formed in the intermediate region R2. These main groove 51 and sub groove 52 are the third grooves, and the main groove 51 is also the fourth groove. The main groove 51 and the sub groove 52 may be collectively referred to as grooves 51 and 52. The main groove 51 is a groove that extends vertically in a straight line inclined left and right with respect to the horizontal plane when viewed from inside the cup 3, similar to the main groove 41 in the lower region R1, and is formed so that its lower side faces leftward. In FIG. 5, the angle of inclination of the extension direction of the groove 51 with respect to the horizontal plane is shown as θ2, and this angle θ2 is smaller than the angle θ1 formed by the main groove 41 and the auxiliary groove 43, for example, 10° to 30°.

[0042] A large number of main grooves 51 are provided at intervals in the circumferential direction of the intermediate region R2 and are parallel to one another. The lower end of each main groove 51 is connected to the upper end of either the main groove 41 or the auxiliary groove 43. Therefore, from another perspective, the upper ends of the main groove 41 and the auxiliary groove 43 extend into the intermediate region R2 to form the main groove 51.

[0043] Among the many main grooves 51, when looking at the main grooves 51 connected to the main groove 41, one end of the sub grooves 52 is connected to the left and right of the extension direction of the main groove 51. Therefore, the sub grooves 52 are formed so as to branch out from the left and right of the extension direction of the main groove 51. The other end of each sub groove 52 is connected to the main groove 51 connected to the auxiliary groove 43 from the side.

[0044] More specifically, when viewed in the extension direction of the main groove 51 connected to the main groove 41, a large number of sub-grooves 52 are connected from the left of the main groove 51 at intervals in the extension direction, and a large number of sub-grooves 52 are connected from the right of the main groove 51 at intervals in the extension direction. When viewed in the extension direction, one end of the left sub-groove 52 and one end of the right sub-groove 52 are alternately connected at intervals in the extension direction. Therefore, in the extension direction of the main groove 51, the connection position of the left sub-groove 52 and the connection position of the right sub-groove 52 are different from each other. The sub-grooves 52 are used to form a liquid film like the sub-grooves 42 in the lower side region R1, but since a large number of them are provided on each of the left and right sides of the main groove 51 and extend from different positions on the left and right sides of the main groove 51, they are widely distributed and arranged in the intermediate region R2, preventing the formation of the liquid film from remaining in a local position.

[0045] In the above-mentioned main groove 51, the sub-grooves 52 provided on the left side in the extension direction are formed in a straight line parallel to each other, and the sub-grooves 52 provided on the right side in the extension direction are formed in a straight line parallel to each other. If the upper side in the extension direction of the main groove 51 connected to the main groove 41 is the tip side, the other end side of the sub-groove 52 extends toward the tip side in the extension direction with respect to one end side of the sub-groove 52.

[0046] With the main grooves 51 and the sub grooves 52 arranged as described above, when the main groove 51 connected to the main groove 41 and the sub grooves 52 sandwiching the main groove 51 from the left and right are considered as one set, this set forms a tree-like groove with the main groove 51 as a trunk and the sub grooves 52 as branches, and extends from the main groove 41. A plurality of such tree-like groove sets are provided in the circumferential direction of the lower side region R1, and are connected to each other via the main grooves 51 connected to the auxiliary grooves 43.

[0047] The main groove 51 and the sub groove 52 will be further described with reference to Figs. 8 and 9. Figs. 8 and 9 show cross sections intersecting the extension direction of the main groove 51 and the sub groove 52, respectively. The width L4 of the main groove 51 and the width L5 of the sub groove 52 are the same as the widths L2 and L3 of the sub groove 42 and the auxiliary groove 43 in the lower side region R1, for example, and therefore are smaller than the width L1 of the main groove 41 in the lower side region R1. The height H4 of the main groove 51 and the height H5 of the sub groove 52 are the same as the height H3 of the auxiliary groove 43, for example, and therefore are smaller than the height of the main groove 41. Therefore, the cross-sectional areas of the main groove 51 and the sub groove 52 are smaller than the cross-sectional area of ​​the main groove 41. As will be described later, the grooves 51 and 52 have an unevenness 53 formed on the outside, but the depths H4 and H5 of the grooves 51 and 52 are depths based on the convex parts of the unevenness 53 (i.e., the distance between the top of the convex part and the bottom surface of the groove).

[0048] The reason why the main groove 41 is not provided in the intermediate region R2 and both the main groove 51 and the sub groove 52 are configured to have a relatively small cross-sectional area as described above is to prevent turbulence of the downward air current toward the wafer W. In other words, if a groove with a large width or depth were provided in the intermediate region R2 near the opening of the cup 3, much of the downward air current would flow into that groove and be guided by it, resulting in, for example, a swirling flow. However, this prevents turbulence of the air current, and thus prevents defective processing of the wafer W.

[0049] Meanwhile, the outer regions of the main groove 51 and the sub groove 52 in the intermediate region R2 are treated by sandblasting, and thus fine irregularities 53 are formed. The width of the concaves (the distance between the tops of the convexities) constituting the irregularities 53 is smaller than the widths L1 to L5 of the above-mentioned grooves. That is, the irregularities in the intermediate region R2 are finer than the irregularities formed by the grooves 41 to 43 in the lower region R1. The irregularities 53 in the intermediate region R2 have the role of efficiently collecting mist. As described above, since the mist is minute, it can enter the concaves constituting the irregularities 53, and is captured by colliding with the convexities constituting the irregularities 53, and tends to accumulate in the concaves to form a liquid film. The mist that later scatters toward the concaves adheres to the liquid film and is collected, preventing it from adhering to the wafer W.

[0050] Next, the upper end region R3 will be described. The upper end region R3, which includes the upper end of the cup 3, is composed of a smooth surface. Therefore, the grooves 41-43, 51, and 52 described in the description of the regions R1 and R2, and the above-mentioned unevenness 53 are not formed. Therefore, the main groove 51 and the sub groove 52 are interrupted on the way to the upper end of the cup 3. Because of such a smooth surface, droplets and mist are unlikely to adhere to the upper end region R3, and the washing liquid is unlikely to wrap around due to the surface tension of the washing liquid, as described above.

[0051] Hereinafter, the state of the lower side region R1 and the middle region R2 when the wafer W is cleaned in the developing device 1 will be described with reference to Figs. 10 and 11. In Fig. 10, the dotted arrows indicate the flow of the cleaning liquid in the lower side region R1. Fig. 11 is a schematic diagram of a cross section taken along the line AA' in Fig. 10, showing the state of the sub-grooves 42 arranged vertically. Note that in the figures shown so far, the grooves 41-43, 51, and 52 have been shown as having a constant width in the depth direction, but in Fig. 11, the sub-groove 42 is shown as having a shape in which the width narrows as it goes deeper. The grooves 41-43, 51, and 52 may or may not have such a narrow width.

[0052] When the cleaning liquid is supplied to the wafer W and starts to be shaken off by rotation, droplets D of the cleaning liquid scattered toward the lower region R1 enter the sub-groove 42 (FIG. 11(a)). As the cleaning liquid continues to be shaken off, more droplets D enter the sub-groove 42 and a liquid film D1 is formed (FIG. 11(b)). The droplets D that subsequently splash toward the sub-groove 42 collide with this liquid film D1 and are attracted to the liquid film D1 by the surface tension of the cleaning liquid, and are integrated with the liquid film D1. In other words, they are captured by the liquid film D1 without bouncing off toward the wafer W (FIG. 11(c)).

[0053] Furthermore, the droplets D scattered in the region between the sub-grooves 42 collide with the region and spreads over the region, and a part of the droplets comes into contact with and becomes integrated with the liquid film D1 in the sub-groove 42. In other words, the liquid film D1 is also formed in the region between the sub-grooves 42, and the region in which the liquid film D1 is formed is not limited to the sub-groove 42. Fig. 11(c) shows a state in which the liquid film D1 is formed in the sub-groove 42 and between the sub-grooves 42 in this way, and the droplets D scattered in the lower region R1 are subsequently captured by the liquid film D1 formed over such a wide range.

[0054] In this way, the liquid film D1 is formed in and around the sub-groove 42, but because the liquid droplets scatter in the circumferential direction from the wafer W, the liquid droplets D scatter over the entire circumferential direction of the lower region R1. That is, the liquid droplets D also scatter into the main groove 41 and the auxiliary groove 43, and the range in which the liquid film D1 is formed extends over the main groove 41 and the auxiliary groove 43, and the liquid droplets D are captured in each region in which the liquid film D1 is formed. Therefore, although the main groove 41 and the auxiliary groove 43 have been described as grooves for discharging the liquid, they are also used to form the liquid film D1.

[0055] The cleaning liquid forming the liquid film D1 in the main groove 41 and the auxiliary groove 43 flows downward along the main groove 41 and the auxiliary groove 43 due to gravity, since the main groove 41 and the auxiliary groove 43 are formed in the vertical direction. Also, the cleaning liquid forming the liquid film D1 in each of the sub-grooves 42 flows to gather in the main groove 41 as shown in FIG. 10 due to the action of gravity and other factors. To explain the other factors, as already described, the sub-groove 42 is connected to the main groove 41 and the auxiliary groove 43, but since the opening area to the main groove 41 is larger than the opening area to the auxiliary groove 43, it is easier to flow to the main groove 41 than to the auxiliary groove 43. Also, due to the difference in the cross-sectional area of ​​the grooves, a larger liquid flow is formed in the main groove 41 than in the auxiliary groove 43, and the surface tension from this liquid flow acts strongly on the liquid film D1 in the sub-groove 42. Therefore, the liquid in the sub-groove 42 is easier to flow toward the main groove 41 than to the auxiliary groove 43. The cleaning liquid that has flowed downward through the main groove 41 and the auxiliary groove 43 flows from the lower end through the narrow flow passage 18 formed by the body portion 31 and the descending wall 38 and enters the drainage port 30.

[0056] In addition, since the main groove 51 in the intermediate region R2 is connected to the main groove 41 and the auxiliary groove 43, the cleaning liquid that splashes into the intermediate region R2 and flows in the main groove 51 also flows into these main groove 41 and auxiliary groove 43 and is discharged downward along these main groove 41 and auxiliary groove 43. In this way, the cleaning liquid splashes from the wafer W and is taken up by the liquid film D1, while the cleaning liquid that constitutes the liquid film D1 continues to be discharged, so that the formation of the liquid film D1 is maintained in the lower region R1 by an appropriate amount of cleaning liquid.

[0057] The state of the intermediate region R2 when the liquid film D1 is formed in the lower region R1 in this manner will be described. Droplets D of the cleaning liquid shaken off from the wafer W also scatter in this intermediate region R2. Fig. 12 shows a plan view of the wafer W during shaking off. As described above, the angle of the main groove 51 formed in the intermediate region R2 with respect to the horizontal plane is relatively small. As shown in Fig. 12, in a plan view, the droplets D scatter from the peripheral edge of the rotating wafer W toward the tangential direction of the wafer W, but the direction in which the droplets D scatter and the extension direction of the main groove 51 generally coincide with each other as shown in the schematic diagram of Fig. 13.

[0058] Therefore, the probability that the droplets D scattered toward the main groove 51 will collide with the corners forming the opening edge of the main groove 51 and bounce back onto the wafer W can be reduced, and the droplets D can easily enter the main groove 51 as shown in the schematic diagram of Fig. 14. Since the main groove 51 is thus formed to have an extension direction that allows the droplets D to easily enter, the droplets D gather in the main groove 51 and form a liquid film D1.

[0059] The droplets D also splash toward the sub groove 52, and a liquid film D1 is formed inside the droplets. The droplets D splashed into the main groove 51 and the sub groove 52 on which the liquid film D1 is formed are captured by the liquid film D1 and integrated with the liquid film D1, thereby preventing the droplets D from splashing onto the wafer W. The droplets D splashed to the outside of the main groove 51 and the outside of the sub groove 52 collide with the corresponding regions and spread over the corresponding regions, and a part of the droplets comes into contact with and is integrated with the liquid film D1 in the main groove 51 or the liquid film D1 in the sub groove 52. In other words, the liquid film D1 is also formed in the outer regions of the grooves, and the regions in which the liquid film D1 is formed are not limited to the inside of the main groove 51 and the sub groove 52.

[0060] The cleaning liquid constituting the liquid film D1 in the main groove 51 flows downward into the main groove 41 due to the action of gravity and is discharged. The cleaning liquid constituting the liquid film D1 in the sub-groove 52 flows into the main groove 51 by being attracted by the liquid flow in the main groove 51 due to the action of gravity and the surface tension of the cleaning liquid, and is then discharged toward the main groove 41. While the liquid constituting the liquid film D1 is discharged, new droplets D are collected, thereby maintaining the liquid films in the main groove 51 and the sub-groove 52.

[0061] Furthermore, mist generated from the cleaning liquid supplied to the wafer W floats on the wafer W. As described above, this mist is captured by the unevenness 53 to form a liquid film. Then, the mist subsequently supplied to the unevenness 53 is captured by the liquid film.

[0062] As described above, the cleaning process proceeds while the liquid film D1 in the lower region R1 collects the droplets D and the mist in the middle region D2. Then, the supply of the cleaning liquid to the wafer W stops, and the scattering of the cleaning liquid from the wafer W stops. While the supply of the droplets D to the lower region R1 and the supply of the droplets D and the mist to the middle region D2 stop, the discharge of the cleaning liquid through each groove continues. Figure 11(d) shows the state in which the cleaning liquid is discharged from the sub-groove 42.

[0063] The cleaning liquid that formed the liquid film D1 outside each of the grooves 41-43 and 51, 52 also enters the grooves by gravity and is discharged from the grooves. When the cleaning process is completed, the liquid film D1 disappears from inside and outside each groove as the cleaning liquid is discharged. The above-mentioned state is repeated every time a wafer W is processed. Therefore, for the sub-groove 42, the states shown in Figures 11(a)-(d) are repeated.

[0064] Incidentally, while it has been described that the liquid film D1 is continuously formed in the sub-groove 42, the main groove 51, and the sub-groove 52 during the above cleaning process, the liquid film D1 is formed intermittently depending on the amount of cleaning liquid scattered from the wafer W and the amount of cleaning liquid discharged from the main groove 41 and the auxiliary groove 43. Even in the case where the liquid film D1 is formed intermittently, the liquid film D1 can have the effect of collecting the cleaning liquid.

[0065] Incidentally, when forming a liquid film on the inner peripheral surface of the cup 3 to collect the cleaning liquid, it is conceivable to provide a mesh-like member on the inner peripheral surface, or to form recesses with relatively large openings distributed on the inner peripheral surface. However, when such a configuration is adopted, it is conceivable that a relatively large amount of cleaning liquid will be retained in the mesh or recesses for a long period of time. Such cleaning liquid may deteriorate and adhere to a wafer W newly loaded into the developing apparatus 1 during processing, thereby affecting the processing.

[0066] However, as described above, the inner peripheral surface of the cup 3 is provided with a set consisting of the sub-groove 42 and the main groove 41 that extends in the vertical direction and has a cross-sectional area larger than that of the sub-groove 42, and a liquid film D1 is formed, and the cleaning liquid that formed the liquid film D1 is discharged downward from the main groove 41. Therefore, the cup 3 prevents the altered cleaning liquid from being supplied to the wafer W, and also forms a liquid film on the inner peripheral surface to collect the droplets D of the cleaning liquid scattered from the wafer W, suppressing the droplets D from bouncing off the inner peripheral surface and preventing the droplets D from adhering to the peripheral portion of the wafer W. Therefore, a decrease in the yield of semiconductor products manufactured from the wafer W can be suppressed.

[0067] A plurality of pairs of the main groove 41 and the sub groove 42 are provided in the circumferential direction in the lower region R1 of the cup 3. This makes it possible to obtain the droplet D collection effect over a wide range of the inner peripheral surface of the cup 3. This means that the droplets D can be more reliably prevented from bouncing off the inner peripheral surface of the cup 3, thereby preventing them from adhering to the wafer W. The sub grooves 42 branch out from different positions above and below on both the left and right sides of the main groove 41. By providing a large number of sub grooves 42 in this layout, it is possible to obtain the droplet D collection effect over a wide range of the inner peripheral surface of the cup 3 in the circumferential and vertical directions.

[0068] The main groove 41 is inclined left and right with respect to the horizontal plane when viewed facing the inner circumferential surface of the cup 3. Therefore, the flow of the cleaning liquid in the main groove 41 is relatively gentle. As described above, the cleaning liquid in the sub-groove 42 flows into the main groove 41 due to the action of the surface tension of the cleaning liquid. Therefore, the flow of the cleaning liquid in the main groove 41 is suppressed, and the discharge of the cleaning liquid from the sub-groove 42 to the main groove 41 is also suppressed. Therefore, due to the inclination of the main groove 41, the formation of the liquid film D1 during the cleaning process in the main groove 41 and the sub-groove 42 lasts for a long time, and a high collection effect can be obtained for the droplets D. The auxiliary groove 43, which has a role of discharging the cleaning liquid downward together with the main groove 41, is also inclined like the main groove 41. Therefore, the flow of the cleaning liquid from the auxiliary groove 43 is also suppressed, and the liquid film D1 is more reliably maintained for a relatively long time in each of the grooves 41 to 43.

[0069] In addition, the cup 3 is configured so that the intermediate region R2 has finer projections and recesses than the lower region R1, which prevents the above-mentioned turbulence of the downward air current while collecting droplets and mist of the cleaning liquid. In the above example, the main groove 41 is not formed in the intermediate region R2, which results in the intermediate region R2 having fine projections and recesses.

[0070] The fact that the intermediate region R2 has finer unevenness than the lower region R1 will now be described in more detail. Making the intermediate region R2 have finer unevenness means that the configuration of the lower region R1 has less effect on the downward air current than when the configuration of the lower region R1 is disposed in the intermediate region R2, and the main groove 41 may be provided in the intermediate region R2. That is, in the above example, the main groove 41 extends into the intermediate region R2 as the main groove 51 with a different width and depth, but the main groove 41 may extend into the intermediate region R2 without changing the width and depth. The ratio of the opening area of ​​the sub-groove 42 to the opening area of ​​the main groove 41 in a unit area of ​​the intermediate region R2 is set as a first ratio, and the ratio of the opening area of ​​the main groove 51 and the sub-groove 52 to the opening area of ​​the main groove 41 in a unit area of ​​the intermediate region R2 is set as a second ratio. If a groove having a larger opening area than the main groove 41 is not provided in the intermediate region R2 when viewed in the extension direction, and the first ratio is smaller than the second ratio, the intermediate region R2 has finer unevenness. Specifically, for example, when only a few of the main grooves 41 extend into the intermediate region R2, the first ratio is smaller than the second ratio. Note that, because of the above definition, the first ratio is smaller than the second ratio even when no main grooves 41 are provided in the intermediate region R2.

[0071] Now, suppose that the main groove 51 and the sub groove 52 are not formed in the middle region R2, and only sandblasting is performed. In the case where unevenness 53 is formed in such a way that the interval between the convex portions is smaller than the opening width of each of the main groove 41, the sub groove 42, and the auxiliary groove 43, this also falls within the category of the intermediate region R2 having finer unevenness than the lower region R1.

[0072] The irregularities in the middle region R2 being finer than those in the lower region R1 include those formed by grooves and those formed by irregularities other than grooves. However, these irregularities other than grooves are irregularities formed intentionally by the above-mentioned sandblasting, plasma treatment, etching, etc., and do not include irregularities that are inevitably formed in the manufacturing process of the cup 3. Specifically, such irregularities other than grooves formed by sandblasting, etc. are irregularities with a surface roughness Ra of 0.5 μm or more.

[0073] In the above example, the inner circumferential surface 31A forming the narrow flow passage 18 is provided with no main groove 51 or sub groove 52, so that the cleaning liquid retention performance in the narrow flow passage 18 is kept low and the cleaning liquid is prevented from accumulating. However, the inner circumferential surface 31A may also have the main groove 51 and sub groove 52. For example, the main groove 41 in the lower side region R1 extends to the inner circumferential surface 31A, and the sub groove 42 can be formed so as to branch off from the main groove 51 in the inner circumferential surface 31A as in the lower side region R1. However, in order to prevent the cleaning liquid from accumulating, it is preferable to make the ratio of the opening area of ​​the sub groove 42 per unit area formed in the inner circumferential surface 31A smaller than the ratio of the opening area of ​​the sub groove 42 per unit area in the lower side region R1 so that the retention performance is not excessive. Specifically, for example, the sub-grooves 42 are provided such that the intervals between the sub-grooves 42 along the extension direction of the main groove 41 are larger on the inner circumferential surface 31A than in the lower region R1, and the number of the sub-grooves 42 on the inner circumferential surface 31A is smaller than that in the lower region R1, thereby achieving the above-mentioned relationship of the ratio of the opening areas. Note that, in order to prevent the cleaning liquid, which is pure water, from accumulating in the narrow flow passage 18, the inner circumferential surface 31A may be made of a material that is more water-repellent than each of the lower region R1, the intermediate region R2, and the upper end region R3.

[0074] Incidentally, the upper end region R3 is made smooth without the main groove 51, the sub groove 52, and the unevenness 53 in order to lower the retention performance of the cleaning liquid, which is pure water, compared to the intermediate region R2 as described above (i.e., to increase the water repellency). However, the retention performance of the cleaning liquid may be slightly higher than that of a smooth surface by providing a few main grooves 51 and sub grooves 52 or providing unevenness 53. When the main groove 51 and the sub groove 52 are provided, the ratio of the opening area of ​​the sub groove 52 per unit area may be made smaller in the upper end region R3 than in the intermediate region R2, for example, in order to lower the retention performance of the cleaning liquid compared to the intermediate region R2. When the unevenness 53 is provided in the upper end region R3, the surface roughness of the unevenness 53 in the upper end region R3 may be made larger than that of the unevenness 53 in the intermediate region R2 (so that the convex portions are relatively far apart), thereby reducing the adhesion of the mist and lowering the retention performance.

[0075] The pattern of the lower region R1 described above is a modified pattern of the groove pattern formed on the cochlea shell. FIG. 15 shows an example in which a pattern similar to the groove pattern of the cochlea shell is formed over the entire inner circumferential surface of the inclined wall 32. That is, the pattern shown in FIG. 15 is formed over the already-described regions R1 to R3. Note that, like FIG. 5, FIG. 15 is also a plan view in which the curvature of the inner circumferential surface of the curved inclined wall 32 is cancelled. Although the sub-groove 42 shown in FIG. 5 is linear, the sub-groove 42 may be curved as shown in FIG. 15.

[0076] In addition, the shape of each of the grooves described above can be appropriately changed. For example, the main grooves 41, 51 and the auxiliary groove 43 extending in the vertical direction are linear in the above examples, but may be curved. In addition, for example, the tree-like grooves in the above examples are connected to each other, but they may be separated from each other. Specifically, for example, the auxiliary groove 43 may not be provided, and different sets of auxiliary grooves 42 may not be connected to each other. In addition, the auxiliary grooves 42 may extend so as to branch out on the way from the main groove.

[0077] Incidentally, in the above description, the developing device 1 supplies a cleaning liquid to the wafer W, and the cup 3 collects the cleaning liquid to form a liquid film, but for example, the developing liquid may be shaken off prior to shaking off the cleaning liquid, and a liquid film may be formed in the cup 3 by the developing liquid, thereby suppressing the rebound of droplets of the developing liquid onto the cup. In other words, the developing liquid may be used as the processing liquid for forming the liquid film.

[0078] The liquid processing device may be one that supplies a coating liquid for forming a coating film as a processing liquid to the center of the rotating wafer W, and forms a film on the wafer W by spin coating. This coating liquid contains a solvent and a solidifying component other than the solvent, and is, for example, a chemical liquid for forming a resist or an anti-reflection film or a chemical liquid for forming an insulating film. During spin coating, when the excess coating liquid is shaken off from the wafer W, the coating liquid splashes toward the inner peripheral surface of the cup 3, and a liquid film is formed in the same manner as when a cleaning liquid is used, and droplets of the coating liquid are collected. Then, this coating liquid is supplied into each groove to form a liquid film.

[0079] Incidentally, similar to the case where a liquid film is formed by a cleaning liquid, the coating liquid constituting the liquid film is discharged from each groove during the processing of the wafer W. However, it is assumed that a small amount of coating liquid remains in each groove. However, during the processing of this wafer W, the coating liquid remaining in the grooves is prevented from solidifying by the coating liquid that continues to be scattered from the wafer W and supplied to each groove. Similarly, even if the coating liquid remains in each groove after the processing of the wafer W is completed, the coating liquid is prevented from solidifying by the processing liquid that is supplied to the groove when the subsequent wafer W is processed. In other words, the solidified coating liquid is prevented from becoming particles and adhering to the wafer W.

[0080] Incidentally, it has been described that the processing liquid is scattered from the wafer W when the wafer W rotates, and a liquid film is formed in the cup 3. However, it is conceivable that the processing liquid is scattered from the wafer W to the cup 3 due to the impact when the processing liquid is discharged from the nozzle to the wafer W, and a liquid film is formed. Therefore, the substrate processing apparatus may be configured so that the wafer W does not rotate. In such a case, the main groove 51 in the middle region R2 of the cup 3, which is intended to efficiently collect the processing liquid from the rotating wafer W as described above, may not be provided. Specifically, for example, in the above example, the same groove pattern as that in the lower region R1 may be formed in the portion described as the middle region R2. In other words, the main groove 41 and the auxiliary groove 43 may extend from the lower region R1 to the middle region R2, and the auxiliary groove 43 may extend so as to branch off from the main groove 41 in the middle region R2.

[0081] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, modified, and combined in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0082] W wafer 3 cups 41 Main groove 42 Minor groove R1 Lower side area

Claims

1. A cup surrounding a substrate for liquid processing the substrate, a first groove extending longitudinally on an inner circumferential surface of the cup; a plurality of second grooves each having one end connected to the first groove, each having a cross-sectional area as viewed in the extension direction smaller than a cross-sectional area of ​​the first groove; A cup with.

2. A cup as described in claim 1, wherein a plurality of groove sets each consisting of the first groove and a plurality of second grooves sandwiching the first groove from the left and right and each having one end connected to the first groove are provided in the circumferential direction of the inner surface of the cup, and the number density of the second grooves is greater than that of the first grooves.

3. 3. The cup of claim 2, wherein the first grooves of each set of grooves are connected to second grooves at different heights on the left side and different heights on the right side.

4. 4. The cup according to claim 1, wherein the first groove extends obliquely with respect to a horizontal plane when viewed from within the cup.

5. the first groove and the second groove are provided in a first height region on an inner circumferential surface of the cup, A cup as described in any one of claims 1 to 4, wherein the unevenness of a second height region on the inner surface which is above the first height region and above the surface of the substrate being processed in the cup is finer than the unevenness formed by the first groove and the second groove in the first height region.

6. the projections and recesses in the second height region are formed by a third groove having a smaller cross-sectional area as viewed in the extension direction of the groove than the first groove, The cup of claim 5, wherein the ratio of the opening area of ​​the third groove to the opening area of ​​the first groove in the second height region is greater than the ratio of the opening area of ​​the second groove to the opening area of ​​the first groove in the first height region.

7. the first groove and the second groove are provided in a first height region on an inner circumferential surface of the cup, an annular exhaust region is formed between the cup and the substrate being processed in the cup; a third height region on the inner circumferential surface that is lower than the first height region is located below and downstream of the exhaust region, and forms an annular narrow flow passage that is narrower than the exhaust region; A cup as described in any one of claims 1 to 6, wherein the ratio of openings per unit area of ​​the second groove is smaller in the third height region than in the first height region.

8. 8. The cup according to claim 7, wherein a region of the inner circumferential surface above the third height region is subjected to a hydrophilic treatment.

9. 9. The cup of claim 7 or 8, wherein the third elevational region defines a metals collecting surface.

10. the first groove and the second groove are provided in a first height region on an inner circumferential surface of the cup, A fourth groove is provided on the inner circumferential surface above the first height region, the fourth groove extending obliquely with respect to a horizontal plane when viewed from inside the cup, 10. The cup according to claim 1, wherein the angle of the fourth groove relative to a horizontal plane is smaller than that of the first groove.

11. The first groove and the second groove are provided in a first height region on an inner peripheral surface of the cup, A cup as described in any one of claims 1 to 10, wherein a fourth height region including an upper end portion on the inner surface of the cup has a lower retention capacity for the processing liquid for liquid processing the substrate than the first height region.

12. A liquid processing apparatus including a cup surrounding a substrate for performing liquid processing on the substrate, a first groove extending longitudinally on an inner circumferential surface of the cup; a plurality of second grooves provided on the inner circumferential surface such that one end of each second groove is connected to the first groove, and each second groove has a cross-sectional area, as viewed in the extension direction, smaller than the cross-sectional area of ​​the first groove; a placement portion in the cup on which the substrate is placed; a processing liquid supply unit that supplies a processing liquid to the substrate placed on the substrate placement unit to process the substrate; A liquid treatment device comprising:

13. the first groove and the second groove are provided in a first height region on an inner circumferential surface of the cup, A liquid processing apparatus as described in claim 12, wherein the unevenness of a second height region on the inner surface which is above the first height region and above the surface of the substrate being processed in the cup is finer than the unevenness formed by the first groove and the second groove in the first height region.

14. the first groove and the second groove are provided in a first height region on an inner circumferential surface of the cup, an annular exhaust region is formed between the cup and the substrate placed on the substrate placement section to be processed in the cup; a third height region on the inner circumferential surface that is lower than the first height region is located below and downstream of the exhaust region, and forms an annular narrow flow passage that is narrower than the exhaust region; 14. The liquid treatment apparatus according to claim 12, wherein the number of the first grooves and the number of the second grooves are smaller in the third height region than in the first height region.

15. A liquid processing method for performing liquid processing on a substrate using a cup surrounding the substrate, comprising: a step of placing the substrate on a placement section provided within the cup, the placement section including a first groove extending vertically on an inner peripheral surface of the cup, and a plurality of second grooves provided on the inner peripheral surface such that one end of each second groove is connected to the first groove, the cross-sectional area of ​​each second groove being smaller than the cross-sectional area of ​​the first groove as viewed in the extending direction; supplying a processing liquid from a processing liquid supply unit to the substrate placed on the substrate placement unit to perform liquid processing on the substrate; A liquid processing method comprising:

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