Substrate processing method

Abstract

To suppress pattern collapse accompanying adhesion of particles onto a substrate.SOLUTION: A substrate processing method is a substrate processing method that collectively performs dry processing of a plurality of substrates in a wet state. A first arranging step arranges the plurality of substrates in a reservoir region of a chamber. A first replacing step supplies an organic solvent to the plurality of substrates after the first arranging step. A second arranging step arranges the plurality of substrates in a dry region after the first replacing step. A second replacing step supplies steam of a hydrophobic agent from a hydrophobic agent nozzle to the plurality of substrates after the second arranging step. A third arranging step arranges the plurality of substrates in the reservoir region after the second replacing step. A third replacing step supplies the organic solvent to the plurality of substrates from a first organic solvent nozzle after the third arranging step. A chamber cleaning step reserves liquid in the reservoir region after the third replacing step and supplies steam of the organic solvent to the dry region from a second organic solvent nozzle in a state in which the plurality of substrates are immersed in the liquid.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method.

Background Art

[0002] In a drying process for drying a substrate such as a semiconductor wafer, there is a risk that a circuit pattern (hereinafter simply referred to as “pattern”) formed on the surface of the substrate may collapse due to the surface tension of a liquid.

[0003] Therefore, a technique is known in which a drying vapor obtained by vaporizing a drying liquid such as an organic solvent is brought into contact with the substrate after liquid processing to replace the processing liquid on the substrate with the drying liquid, and then the drying liquid is removed from the substrate by volatilization or the like, thereby drying the substrate while suppressing pattern collapse.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique capable of suppressing pattern collapse associated with the adhesion of particles onto a substrate.

Means for Solving the Problems

[0006] A substrate processing method according to one aspect of the present disclosure is a substrate processing method for drying multiple wet substrates at once. The substrate processing method according to the embodiment includes a first placement step, a first replacement step, a second placement step, a second replacement step, a third placement step, a third replacement step, and a chamber cleaning step. The first placement step involves placing multiple substrates in the storage region of a chamber capable of accommodating multiple substrates, the chamber having an airtight space including a storage region where liquid is stored and a drying region located above the storage region. The first replacement step involves supplying an organic solvent from a first organic solvent nozzle to the multiple substrates after the first placement step to replace the liquid adhering to the multiple substrates with the organic solvent. The second placement step involves placing the multiple substrates in the drying region after the first replacement step. The second replacement step involves supplying a hydrophobic agent vapor from a hydrophobic agent nozzle to the multiple substrates after the second placement step to replace the organic solvent adhering to the multiple substrates with the hydrophobic agent. The third placement step involves placing multiple substrates in the storage area after the second replacement step. The third replacement step involves supplying organic solvent to the multiple substrates from the first organic solvent nozzle after the third placement step to replace the hydrophobic agent adhering to the multiple substrates with the organic solvent. The chamber cleaning step involves storing liquid in the storage area after the third replacement step, immersing the multiple substrates in the liquid, and then supplying organic solvent vapor from the second organic solvent nozzle to the drying area to clean the chamber. [Effects of the Invention]

[0007] According to this disclosure, it is possible to suppress pattern collapse caused by the adhesion of particles to the substrate. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 is a schematic side view showing the configuration of the hydrophobic agent nozzle and the second organic solvent nozzle according to the embodiment. [Figure 3] Figure 3 is a flowchart showing an example of the processing steps performed by the substrate processing apparatus according to the embodiment. [Figure 4]Figure 4 shows an example of operation of the substrate processing apparatus according to the present invention. [Figure 5] Figure 5 shows an example of operation of the substrate processing apparatus according to the present invention. [Figure 6] Figure 6 shows an example of operation of the substrate processing apparatus according to the present invention. [Figure 7] Figure 7 shows an example of operation of the substrate processing apparatus according to the present invention. [Figure 8] Figure 8 shows an example of operation of a substrate processing apparatus according to the present invention. [Figure 9] Figure 9 shows an example of operation of the substrate processing apparatus according to the embodiment. [Figure 10] Figure 10 shows an example of operation of a substrate processing apparatus according to the embodiment. [Figure 11] Figure 11 shows an example of the operation of a substrate processing apparatus according to the embodiment. [Figure 12] Figure 12 shows an example of operation of a substrate processing apparatus according to the embodiment. [Figure 13] Figure 13 shows an example of operation of a substrate processing apparatus according to the embodiment. [Figure 14] Figure 14 shows an example of the operation of a substrate processing apparatus according to the embodiment. [Figure 15] Figure 15 shows an example of the operation of a substrate processing apparatus according to the embodiment. [Figure 16] Figure 16 shows an example of operation of a substrate processing apparatus according to the embodiment. [Figure 17] Figure 17 shows an example of operation of the substrate processing apparatus according to the first modified example. [Figure 18] Figure 18 shows an example of operation of the substrate processing apparatus according to the first modified example. [Figure 19] Figure 19 shows an example of operation of the substrate processing apparatus according to the second modified example. [Figure 20] Figure 20 shows an example of operation of the substrate processing apparatus according to the second modified example. [Figure 21] Figure 21 shows an example of operation of the substrate processing apparatus according to the second modified example. [Figure 22] FIG. 22 is a diagram showing an operation example of a substrate processing apparatus according to a second modification. [Figure 23] FIG. 23 is a diagram showing an operation example of a substrate processing apparatus according to a third modification. [Figure 24] FIG. 24 is a diagram showing an operation example of a substrate processing apparatus according to a third modification. [Figure 25] FIG. 25 is a schematic side view showing the configurations of a hydrophobizing agent nozzle and a second organic solvent nozzle according to a fourth modification. **[Embodiments for Carrying Out the Invention]**

[0009] Hereinafter, embodiments for carrying out a substrate processing method according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited by these embodiments. Also, the respective embodiments can be appropriately combined as long as the processing contents do not conflict. In the following embodiments, the same parts are denoted by the same reference numerals, and redundant explanations are omitted.

[0010] In addition, in the embodiments shown below, expressions such as "constant", "orthogonal", "perpendicular", or "parallel" may be used, but these expressions do not necessarily require strict "constant", "orthogonal", "perpendicular", or "parallel". That is, each of the above expressions is assumed to allow deviations such as manufacturing accuracy and installation accuracy.

[0011] In addition, in each of the drawings referred to below, in order to make the explanation easier to understand, there may be shown an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined, and the positive Z-axis direction is the vertically upward direction.

[0012] **[Configuration of Substrate Processing Apparatus]** First, the configuration of the substrate processing apparatus according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view of the substrate processing apparatus according to the embodiment.

[0013] The substrate processing apparatus 100 according to the embodiment shown in Figure 1 collectively dries multiple semiconductor substrates (hereinafter referred to as substrates W) that are wet after liquid treatment. The liquid treatment is not particularly limited, but examples include etching and cleaning.

[0014] Each substrate W has a pattern formed on its surface, and if simply dried, the surface tension of the liquid that has seeped between the patterns may cause the patterns to collapse. Therefore, the substrate processing apparatus 100 brings the treated substrate into contact with the treated substrate using organic solvent vapor to replace the treated liquid with a drying liquid, and then removes the organic solvent from the substrate by evaporation or other means. In this way, the substrate processing apparatus 100 can dry the substrate while suppressing pattern collapse.

[0015] Here, the inventors of the present invention, through diligent research, have found a correlation between particles on the substrate and pattern collapse. Specifically, the inventors created a gradient of particle quantity along the radial direction of the substrate and measured the number of pattern collapses along the radial direction of the substrate (i.e., along the gradient of particle quantity). As a result, the inventors discovered that the number of pattern collapses increases as the particle quantity increases. Thus, the inventors of the present invention have found that particles on the substrate are one of the factors that cause pattern collapse.

[0016] Particle adhesion to the substrate occurs, for example, when particles adhering to the inside of the chamber where the substrate is dried are transferred onto the substrate. Therefore, in the substrate processing apparatus 100 according to this embodiment, a mechanism for cleaning the inside of the chamber is provided to suppress particle contamination inside the chamber, thereby further suppressing pattern collapse on the substrate.

[0017] As shown in Figure 1, the substrate processing apparatus 100 comprises a chamber 1 and a holding unit 2. The substrate processing apparatus 100 also comprises a plurality of rinse nozzles 3, a plurality of hydrophobic agent nozzles 4, a plurality of first organic solvent nozzles 5, a plurality of second organic solvent nozzles 6, and at least one third organic solvent nozzle 7. The substrate processing apparatus 100 also comprises a control device 8.

[0018] (Chamber 1) Chamber 1 comprises a processing tank 11 and a lid 12. The processing tank 11 is an open-topped container capable of accommodating multiple substrates W arranged in a vertical position (upright orientation). The processing tank 11 is capable of storing rinsing liquid supplied from a rinsing nozzle 3, which will be described later. The rinsing liquid is, for example, DIW (deionized water). The lid 12 is a member that covers the top of the processing tank 11 and is configured to be able to move up and down together with a holding part 2, which will be described later. The lid 12 is configured to be able to move up and down by a moving mechanism 23, which will be described later, and by raising the lid 12, multiple substrates W can be loaded into or unloaded from Chamber 1.

[0019] By placing the lid 12 on top of the processing tank 11, an airtight space 13 capable of accommodating multiple substrates W is formed inside the chamber 1. The chamber 1 may also have a sealing member 14 such as an O-ring between the processing tank 11 and the lid 12. This configuration allows the airtightness of the airtight space 13 to be maintained.

[0020] The airtight space 13 has a storage region 131 where DIW supplied from the rinse nozzle 3 (described later) is stored, and a drying region 132 located above the storage region 131. Specifically, the water level L is defined as a water level that allows the entire bodies of multiple substrates W lowered to the lowest movable position within the airtight space 13 by the holding unit 2, and does not come into contact with multiple substrates W raised to the highest movable position within the airtight space 13 by the holding unit 2. In this case, the storage region 131 is the region of the airtight space 13 below the water level L. The drying region 132 is the region of the airtight space 13 above the water level L. The third organic solvent nozzle 7 (described later) is positioned slightly above this water level L. Therefore, the storage region 131 may be defined as the region below the third organic solvent nozzle 7 (described later), and the drying region 132 may be defined as the region above the third organic solvent nozzle 7.

[0021] A drain port 15 for discharging DIW from the treatment tank 11 is provided on the bottom wall of the treatment tank 11. A drain passage 151 is connected to the drain port 15. A valve 152 for opening and closing the drain passage 151 is provided in the middle of the drain passage 151. The valve 152 is electrically connected to a control unit 81, which will be described later, and its opening and closing is controlled by the control unit 81.

[0022] Furthermore, the side wall of the processing tank 11 is provided with multiple exhaust ports 16 for discharging gas from the airtight space 13. The exhaust ports 16 are connected to an exhaust mechanism (not shown), such as a vacuum pump, via an exhaust passage 161. The atmosphere inside the airtight space 13 is discharged to the outside through the exhaust ports 16 and the exhaust passage 161 by the exhaust mechanism.

[0023] The multiple exhaust ports 16 are positioned above the hydrophobic agent nozzle 4, which will be described later. Furthermore, the multiple exhaust ports 16 are positioned below the second organic solvent nozzle 6, which will also be described later. This configuration allows for efficient discharge of vapors (hydrophobic agent vapors and organic solvent vapors) that fill the drying region 132.

[0024] (Holding part 2) The holding unit 2 comprises a holder 21, a shaft 22 that supports the holder 21, and a moving mechanism 23 that raises and lowers the shaft 22. The holder 21 holds multiple substrates W in a vertical position. The holder 21 also holds multiple substrates W arranged at regular intervals in the horizontal direction (here, the Y-axis direction). The shaft 22 extends along the vertical direction (here, the Z-axis direction) and supports the holder 21 at its lower end. The shaft 22 is slidably inserted into an opening (not shown) provided in the upper part of the lid 12.

[0025] The moving mechanism 23 includes, for example, a motor, a ball screw, a cylinder, etc., and is connected to the shaft 22 of the holding unit 2, causing the shaft 22 to move up and down. As the shaft 22 moves up and down by the moving mechanism 23, the holding body 21 supported by the shaft 22 moves up and down. In this way, the moving mechanism 23 can move the multiple substrates W held by the holding body 21 up and down between the storage area 131 and the drying area 132. The moving mechanism 23 is electrically connected to the control unit 81 of the control device 8 and is controlled by the control unit 81.

[0026] (Various nozzles) Multiple rinse nozzles 3 are arranged in the storage area 131. Specifically, the multiple rinse nozzles 3 are located at the bottom of the treatment tank 11. A rinse liquid supply source 32 is connected to the rinse nozzles 3 via a supply passage 31. The rinse liquid supply source 32 supplies DIW to two of the rinse nozzles 3.

[0027] The supply passage 31 is equipped with a valve 34 and a flow regulator 35. The valve 34 opens and closes the supply passage 31. The flow regulator 35 adjusts the flow rate of the processed liquid flowing through the supply passage 31. The valve 34 and the flow regulator 35 are electrically connected to the control unit 81 of the control device 8 and are controlled by the control unit 81.

[0028] Multiple hydrophobic agent nozzles 4, multiple first organic solvent nozzles 5, multiple second organic solvent nozzles 6, and third organic solvent nozzles 7 are arranged in the drying region 132. Specifically, they are arranged on both side walls of the drying region 132 in the chamber 1.

[0029] These are arranged in the order of the third organic solvent nozzle 7, the hydrophobic agent nozzle 4, the first organic solvent nozzle 5, and the second organic solvent nozzle 6, from the bottom to the top of the drying region 132.

[0030] The hydrophobic agent nozzle 4 supplies hydrophobic agent vapor to the drying region 132. Specifically, the hydrophobic agent nozzle 4 discharges hydrophobic agent vapor horizontally from near the side wall of the drying region 132 in the chamber 1 toward the inside of the drying region 132. The supply system for the hydrophobic agent vapor will be described later.

[0031] The first organic solvent nozzle 5 is positioned above the hydrophobic agent nozzle 4. The first organic solvent nozzle 5 supplies liquid organic solvent from the drying region 132 to the storage region 131. Specifically, the first organic solvent nozzle 5 is a spray nozzle that sprays the liquid organic solvent in a conical or fan shape. Multiple first organic solvent nozzles 5 are arranged along the alignment direction (Y-axis direction) of the multiple substrates W. This allows the multiple first organic solvent nozzles 5 to efficiently supply liquid organic solvent to the entire surface of the multiple substrates W.

[0032] An organic solvent supply source 52 is connected to the first organic solvent nozzle 5 via a supply path 51. The organic solvent supply source 52 supplies liquid organic solvent to multiple first organic solvent nozzles 5. In this embodiment, the organic solvent supply source 52 supplies liquid IPA (isopropyl alcohol) to the first organic solvent nozzles 5. Hereinafter, the liquid IPA will be referred to as "IPA liquid".

[0033] The supply passage 51 is equipped with a valve 54 and a flow regulator 55. The valve 54 opens and closes the supply passage 51. The flow regulator 55 adjusts the flow rate of the IPA liquid flowing through the supply passage 51. The valve 34 and the flow regulator 35 are electrically connected to the control unit 81 of the control device 8 and are controlled by the control unit 81.

[0034] The second organic solvent nozzle 6 is positioned above the first organic solvent nozzle 5. The second organic solvent nozzle 6 supplies organic solvent vapor to the drying region 132. Specifically, the second organic solvent nozzle 6 discharges organic solvent vapor upward or diagonally upward from near the side wall of the drying region 132 in the chamber 1 towards the top of the drying region 132, i.e., towards the lid 12. Figure 1 shows an example where the second organic solvent nozzle 6 discharges organic solvent vapor diagonally. The supply system for organic solvent vapor will be described later.

[0035] The third organic solvent nozzle 7 is positioned below the hydrophobic agent nozzle 4. Specifically, the third organic solvent nozzle 7 is positioned slightly higher than the liquid level (water level L) of the DIW stored in the storage region 131. The third organic solvent nozzle 7 supplies liquid organic solvent to the liquid level of the DIW stored in the storage region 131. As a result, the third organic solvent nozzle 7 forms a liquid film of organic solvent on the liquid surface of the DIW stored in the storage region 131.

[0036] An organic solvent supply source 72 is connected to the third organic solvent nozzle 7 via a supply path 71. The organic solvent supply source 72 supplies liquid organic solvent to the third organic solvent nozzle 7. In this embodiment, the organic solvent supply source 72 supplies liquid IPA to the third organic solvent nozzle 7.

[0037] The supply passage 71 is equipped with a valve 74 and a flow regulator 75. The valve 74 opens and closes the supply passage 71. The flow regulator 75 adjusts the flow rate of the IPA liquid flowing through the supply passage 71. The valve 74 and the flow regulator 75 are electrically connected to the control unit 81 of the control device 8 and are controlled by the control unit 81.

[0038] (Control device 8) The control device 8 is, for example, a computer and comprises a control unit 81 and a storage unit 82. The storage unit 82 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs, and stores programs that control various processes executed in the substrate processing device 100. The control unit 81 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits, and controls the operation of the substrate processing device 100 by reading and executing the programs stored in the storage unit 82.

[0039] Such a program may have been recorded on a computer-readable storage medium and installed from that storage medium to the storage unit 82 of the control device 8. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0040] (Supply system for hydrophobic agent nozzle 4 and second organic solvent nozzle 6) Figure 2 is a schematic side view showing the configuration of the hydrophobic agent nozzle 4 and the second organic solvent nozzle 6 according to the embodiment.

[0041] As shown in Figure 2, the hydrophobic agent nozzle 4 comprises a long cylindrical body portion 41 extending along the alignment direction (Y-axis direction) of the multiple substrates W, and a plurality of discharge ports 42 formed at intervals along the alignment direction of the multiple substrates on the body portion 41. In addition to simple openings, the discharge ports 42 may be spray nozzle tips or the like that which atomize the vapor of the hydrophobic agent in a mist form. Alternatively, the hydrophobic agent nozzle 4 may have slit-shaped discharge ports extending along the alignment direction of the multiple substrates W instead of the plurality of discharge ports 42.

[0042] Similarly, the second organic solvent nozzle 6 comprises a long cylindrical body portion 61 extending along the arrangement direction (Y-axis direction) of the plurality of substrates W, and a plurality of discharge ports 62 formed at intervals along the arrangement direction of the plurality of substrates relative to the body portion 61. In addition to simple openings, the discharge ports 62 may be spray nozzle tips or the like that which atomize the organic solvent vapor in a mist form. Furthermore, instead of a plurality of discharge ports 62, the second organic solvent nozzle 6 may have slit-shaped discharge ports extending along the arrangement direction of the plurality of substrates W.

[0043] The hydrophobic agent nozzle 4 is connected to the steam supply system 45 via a supply passage 46 (an example of a hydrophobic agent supply passage). The steam supply system 45 includes a hydrophobic agent supply source 451, a gas supply source 452, valves 453 and 454, a heating unit 455, and a flow regulator 456. The hydrophobic agent supply source 451 supplies the hydrophobic agent in liquid form, and the gas supply source 452 supplies N2 (nitrogen) gas (an example of a dry gas), which is an inert gas.

[0044] Here, the hydrophobic agent is, for example, a hydrophobic agent used to hydrophobize the surface of the substrate W, diluted to a predetermined concentration with thinner. As the hydrophobic agent used as a raw material, for example, a silylating agent or a silane coupling agent can be used.

[0045] Specifically, for example, TMSDMA (trimethylsilyldimethylamine), DMSDMA (dimethylsilyldimethylamine), TMSDEA (trimethylsilyldiethylamine), HMDS (hexamethylzin razane), etc., can be used as hydrophobic agents for raw materials.

[0046] Furthermore, ether solvents and organic solvents belonging to the ketone family can be used as thinners. Specifically, for example, PGMEA (propylene glycol monomethyl ether acetate), cyclohexanone, and HFE (hydrofluoroether) can be used as thinners.

[0047] The hydrophobic agent supply source 451 is connected to the heating unit 455 via valve 453, and the gas supply source 452 is connected to the heating unit 455 via valve 454. Valves 453 and 454 are electrically connected to the control unit 81 and are opened and closed by the control unit 81.

[0048] When both valves 453 and 454 are open, the heating unit 455 is supplied with a mixed fluid of liquid hydrophobic agent supplied from the hydrophobic agent supply source 451 and N2 gas supplied from the gas supply source 452. The heating unit 455 generates hydrophobic agent vapor (hereinafter referred to as "hydrophobic agent vapor") by heating this mixed fluid. A two-fluid nozzle (not shown) is provided downstream of valve 453, and the mixed fluid, atomized by this two-fluid nozzle, is supplied to the heating unit 455.

[0049] On the other hand, when only valve 454 is open, N2 gas is supplied to the heating unit 455 from the gas supply source 452. In this case, the heating unit 455 generates hot N2 gas by heating the N2 gas. The heating unit 455 is connected to the hydrophobic agent nozzle 4 via the supply passage 46 and supplies hydrophobic agent vapor or hot N2 gas to the hydrophobic agent nozzle 4.

[0050] The flow regulator 456 adjusts the flow rate of the gas supplied to the heating unit 455. For example, the flow regulator 456 is composed of a flow meter, a constant flow valve, an electro-pneumatic regulator, etc., and the flow rate of the gas supplied to the heating unit 455 can be adjusted by adjusting the pressure of the gas (N2 gas) supplied to the electro-pneumatic regulator. The flow regulator 456 is electrically connected to the control unit 81 and controlled by the control unit 81.

[0051] The second organic solvent nozzle 6 is connected to the vapor supply system 65 via a supply passage 66 (an example of a second organic solvent supply passage). The vapor supply system 65 includes an organic solvent supply source 651, a gas supply source 652, valves 653 and 654, a heating unit 655, and a flow regulator 656. The organic solvent supply source 651 supplies liquid organic solvent, and the gas supply source 652 supplies N2 gas, which is an inert gas. In this embodiment, the organic solvent supply source 651 supplies liquid IPA.

[0052] The organic solvent supply source 651 is connected to the heating unit 655 via valve 653, and the gas supply source 652 is connected to the heating unit 655 via valve 654. Valves 653 and 654 are electrically connected to the control unit 81 and are opened and closed by the control unit 81.

[0053] When both valves 653 and 654 are open, the heating unit 655 is supplied with a mixed fluid of IPA liquid supplied from the organic solvent supply source 651 and N2 gas supplied from the gas supply source 452. The heating unit 455 generates IPA vapor by heating this mixed fluid. A two-fluid nozzle (not shown) is provided downstream of valve 653, and the mixed fluid, atomized by this two-fluid nozzle, is supplied to the heating unit 655.

[0054] On the other hand, when only valve 654 is open, N2 gas is supplied to the heating unit 655 from the gas supply source 652. In this case, the heating unit 655 generates hot N2 gas by heating the N2 gas. The heating unit 655 is connected to the second organic solvent nozzle 6 via the supply passage 66 and supplies IPA vapor or hot N2 gas to the second organic solvent nozzle 6.

[0055] The flow regulator 656 adjusts the flow rate of the gas supplied to the heating unit 655. For example, the flow regulator 656 is composed of a flow meter, a constant flow valve, an electro-pneumatic regulator, etc., and the flow rate of the gas supplied to the heating unit 655 can be adjusted by adjusting the pressure of the gas (N2 gas) supplied to the electro-pneumatic regulator. The flow regulator 656 is electrically connected to the control unit 81 and controlled by the control unit 81.

[0056] The hydrophobic agent nozzle 4 discharges hydrophobic agent vapor or hot N2 gas horizontally toward multiple substrates W. The second organic solvent nozzle 6 discharges IPA vapor or hot N2 gas upward or diagonally upward toward multiple substrates W.

[0057] <Specific operation of the substrate processing device> Next, the specific operation of the substrate processing apparatus 100 according to the embodiment will be described with reference to Figures 3 to 17. Figure 3 is a flowchart showing an example of the processing procedure performed by the substrate processing apparatus 100 according to the embodiment. Figures 4 to 17 are diagrams showing examples of the operation of the substrate processing apparatus 100 according to the embodiment.

[0058] As shown in Figure 3, a pre-rinsing process is performed in the substrate processing apparatus 100 (step S101). The pre-rinsing process corresponds to an example of the first placement process. Specifically, before multiple substrates W are loaded into the chamber 1, the control unit 81 opens the valve 34 and supplies DIW from the rinsing liquid supply source 32 to the processing tank 11 of the chamber 1, thereby storing DIW in the processing tank 11. Subsequently, the control unit 81 controls the moving mechanism 23 to lower the lid 12 and the shaft 22. As a result, the upper opening of the processing tank 11 is closed by the lid 12, and an airtight space 13 is formed inside the chamber 1.

[0059] Next, the control unit 81 controls the moving mechanism 23 to lower the shaft 22, thereby immersing the multiple substrates W in the DIW stored in the processing tank 11 (see Figure 4). By immersing the multiple substrates W in the DIW in this way, drying of the multiple substrates W can be suppressed.

[0060] Next, the substrate processing apparatus 100 performs a humidity control process (step S102). Specifically, the control unit 81 controls the steam supply system 45 to supply hot N2 gas from the hydrophobic agent nozzle 4 into the drying region 132 (see Figure 5). By supplying hot N2 gas into the drying region 132, the humidity within the drying region 132 can be reduced. This suppresses the deactivation of the hydrophobic agent.

[0061] The supply of hot N2 gas into the drying area 132 is started simultaneously with the pre-rinsing treatment, or before the start of the pre-rinsing treatment. Furthermore, the supply of hot N2 gas from the hydrophobic agent nozzle 4 into the drying area 132 continues until just before the start of the hydrophobic treatment described later.

[0062] Next, the substrate processing apparatus 100 performs a first IPA replacement process in which the liquid on multiple substrates W is replaced from DIW to IPA liquid (step S103). The first IPA replacement process is an example of the first replacement process.

[0063] Specifically, the control unit 81 opens valve 152 (see Figure 1) to discharge DIW from the processing tank 11, thereby exposing multiple substrates W from the DIW (see Figure 6). Then, the control unit 81 opens valve 54 (see Figure 1) to supply IPA liquid from the first organic solvent nozzle 5 to the multiple substrates W exposed from the DIW (see Figure 7).

[0064] Next, the control unit 81 controls the moving mechanism 23 while IPA liquid is being discharged from the multiple second organic solvent nozzles 6 to move the multiple substrates W back and forth between the storage area 131 and the drying area 132. By moving the multiple substrates W in this way, IPA can be supplied evenly to the multiple substrates W.

[0065] The number of times the multiple substrates W are moved back and forth may be one or two or more times. Furthermore, the movement of the multiple substrates W may be a single movement from the storage area 131 to the drying area 132. Also, the control unit 81 does not necessarily need to move the multiple substrates W.

[0066] When moving multiple substrates W, the moving speed may be, for example, between 1 mm / sec and 300 mm / sec. By moving multiple substrates W at a relatively slow speed in this way, the IPA liquid can be supplied more evenly to the multiple substrates W.

[0067] Once the first IPA replacement process is complete, the control unit 81 closes the valve 54 to stop the discharge of IPA liquid from the first organic solvent nozzle 5 into the airtight space 13.

[0068] Next, the control unit 81 controls the moving mechanism 23 to move the multiple substrates W from the storage area 131 to the drying area 132 (step S104). The process in step S104 corresponds to an example of the second placement process.

[0069] If the first IPA replacement process (step S103) is completed with multiple substrates W located in the drying region 132, the process in step S104 is omitted. In this case, the first IPA replacement process corresponds to an example of the second placement process.

[0070] Next, the substrate processing apparatus 100 performs a hydrophobic treatment in which the liquid on multiple substrates W is replaced from IPA to a hydrophobic agent, thereby making the multiple substrates W hydrophobic (step S105). The hydrophobic treatment in step S105 corresponds to an example of the second substitution step.

[0071] Specifically, the control unit 81 opens the valve 34 to store DIW in the processing tank 11 and controls the steam supply system 45 to supply hydrophobic agent steam from the hydrophobic agent nozzle 4 to the drying region 132 (see Figure 8). The supply of hydrophobic agent steam continues even after the DIW has finished to be stored in the processing tank 11 (see Figure 9). By supplying hydrophobic agent steam into the drying region 132 while discharging the gas in the drying region 132 from the exhaust port 16, the atmosphere in the drying region 132 is replaced with hydrophobic agent steam. As a result, the IPA on the multiple substrates W is replaced with the hydrophobic agent, and the multiple substrates W are made hydrophobic.

[0072] In the substrate processing apparatus 100 according to this embodiment, during the hydrophobic treatment, by supplying hydrophobic agent vapor to the drying area 132 while DIW is stored in the processing tank 11, it is possible to suppress the adhesion of hydrophobic agent residue to the inner wall of the processing tank 11.

[0073] Next, the control unit 81 controls the steam supply system 45 to stop the supply of hydrophobic agent steam from the hydrophobic agent nozzle 4 to the drying area 132. Then, the control unit 81 opens valve 152 to discharge DIW from the treatment tank 11, and opens valve 54 to supply IPA liquid from the second organic solvent nozzle 6 to the airtight space 13 (see Figure 10). The second organic solvent nozzle 6 sprays the IPA liquid in a conical or fan shape from the drying area 132 towards the storage area 131. This makes it possible to remove the hydrophobic agent adhering to the inner wall of the chamber 1 over a wide area.

[0074] Furthermore, after stopping the supply of hydrophobic agent vapor, the control unit 81 controls the vapor supply system 65 to start supplying hot N2 gas from the second organic solvent nozzle 6 to the airtight space 13.

[0075] Next, the control unit 81 controls the moving mechanism 23 to move the multiple substrates W from the drying area 132 to the storage area 131 (step S106). The process in step S106 corresponds to an example of the third placement process.

[0076] Next, the substrate processing apparatus 100 performs a second IPA substitution process in which the hydrophobic agents on multiple substrates W are replaced with IPA (step S107). The second IPA substitution process is an example of a third substitution process.

[0077] Specifically, in step S105, the control unit 81 supplies IPA liquid from the second organic solvent nozzle 6 to the storage area 131. In step S106, the control unit 81 places multiple substrates W in the storage area 131. As a result, in the second IPA replacement process, IPA liquid is supplied to multiple substrates W, and the hydrophobic agents on the multiple substrates W are washed away by the IPA.

[0078] Furthermore, while IPA liquid is being discharged from multiple second organic solvent nozzles 6, the control unit 81 controls the moving mechanism 23 to move multiple substrates W back and forth between the storage area 131 and the drying area 132 (see Figure 11). By moving multiple substrates W in this way, IPA can be supplied evenly to multiple substrates W.

[0079] The number of times the multiple substrates W are moved back and forth may be one or two or more times. Furthermore, the movement of the multiple substrates W may be a single movement from the storage area 131 to the drying area 132. Also, the control unit 81 does not necessarily need to move the multiple substrates W.

[0080] When moving multiple substrates W, the moving speed may be, for example, between 1 mm / sec and 300 mm / sec. By moving multiple substrates W at a relatively slow speed in this way, the IPA liquid can be supplied more evenly to the multiple substrates W.

[0081] The control unit 81 stops the movement of the multiple substrates W by the moving mechanism 23 when the multiple substrates W are located in the storage area 131. The control unit 81 also opens the valve 34 to store the DIW in the treatment tank 11 while continuing to supply IPA liquid from the second organic solvent nozzle 6 to the airtight space 13. As a result, the multiple substrates W are immersed in the DIW, and the IPA adhering to the multiple substrates W is washed away by the DIW (see Figure 12).

[0082] Next, in the substrate processing apparatus 100, a chamber cleaning process is performed in which the hydrophobic agent adhering to the inner wall of the chamber 1 is removed with IPA (step S108).

[0083] Specifically, the control unit 81 controls the steam supply system 65 to supply IPA vapor from the second organic solvent nozzle 6 to the airtight space 13 (drying region 132) (see Figure 13). By supplying IPA vapor into the drying region 132 while discharging the gas in the drying region 132 from the exhaust port 16, the atmosphere in the drying region 132 is replaced with IPA vapor. As a result, the hydrophobic agent adhering to the inner wall of the chamber 1 is removed from the inner wall of the chamber 1 by the IPA vapor. In other words, the inner wall of the chamber 1 is cleaned.

[0084] As described above, the substrate processing apparatus 100 according to this embodiment removes the hydrophobic agent adhering to the inner wall of the chamber 1 using IPA vapor. This suppresses the adhesion of hydrophobic agent residue to the inner wall of the chamber 1, and consequently suppresses the transfer of hydrophobic agent residue from the chamber 1 to the multiple substrates W. Therefore, the substrate processing apparatus 100 according to this embodiment can suppress pattern collapse caused by the adhesion of particles to the multiple substrates W.

[0085] Furthermore, during the chamber cleaning process, the multiple substrates W are immersed in the DIW stored in the treatment tank 11. By keeping the multiple substrates W immersed in water while the IPA steam is supplied in this way, it is possible to suppress the adhesion of the hydrophobic agent removed from the chamber 1 to the multiple substrates W.

[0086] In this case, multiple substrates W are protected by immersing them in DIW during the chamber cleaning process. However, the liquid used to immerse the multiple substrates W in the chamber cleaning process may be a liquid other than DIW. For example, the substrate processing apparatus 100 may store IPA in the processing tank 11 during the chamber cleaning process and immerse the multiple substrates W in IPA.

[0087] During the chamber cleaning process, the control unit 81 discharges the DIW in the processing tank 11 from the drain port 15 while supplying DIW to the processing tank 11 from the rinse nozzle 3. This allows the substrate processing apparatus 100 to maintain a clean state of DIW in the processing tank 11 during the chamber linear processing.

[0088] Subsequently, the control unit 81 controls the steam supply system 65 to stop the supply of IPA steam from the second organic solvent nozzle 6 to the airtight space 13, thereby completing the chamber cleaning process.

[0089] Next, the substrate processing apparatus 100 performs a rinsing process (step S109). Specifically, the control unit 81 continues to supply DIW from the rinsing nozzle 3 to the processing tank 11 for a certain period of time while discharging the DIW in the processing tank 11 from the drain port 15 (see Figure 14). This allows the hydrophobic agent removed from the inner wall of the chamber 1 and the IPA used to clean the chamber 1 to be discharged from the chamber 1 along with the DIW.

[0090] Furthermore, the control unit 81 controls the steam supply system 65 to supply hot N2 gas from the second organic solvent nozzle 6 to the airtight space 13. As a result, the atmosphere inside the airtight space 13 is replaced with an inert atmosphere.

[0091] Next, the substrate processing apparatus 100 performs a third IPA replacement process (step S110). Specifically, the control unit 81 controls the moving mechanism 23 to move the multiple substrates W from the storage area 131 to the drying area 132, while controlling the vapor supply system 65 to supply IPA vapor from the second organic solvent nozzle 6 to the airtight space 13 (see Figure 15). As the IPA vapor comes into contact with the surfaces of the multiple substrates W, the DIW adhering to the surfaces of the multiple substrates W is replaced with IPA.

[0092] In parallel with supplying IPA vapor to the airtight space 13 and lifting the multiple substrates W, the control unit 81 discharges the DIW stored in the treatment tank 11 from the drain port 15.

[0093] Next, the substrate processing apparatus 100 performs a drying gas supply process (step S111). Specifically, the control unit 81 controls the steam supply system 65 to supply hot N2 gas from the second organic solvent nozzle 6 to the airtight space 13 (see Figure 16). This promotes the volatilization of IPA remaining on the surfaces of the multiple substrates W, thereby drying the multiple substrates W.

[0094] Next, the substrate processing apparatus 100 performs an unloading process (step S112). Specifically, the control unit 81 controls the moving mechanism 23 to raise the lid 12 and the holding unit 2. After that, the control unit 81 controls a substrate transport device (not shown) to transfer multiple substrates W from the holding unit 21 to the substrate transport device (not shown).

[0095] (First variation) Next, a first modified example of the substrate processing apparatus 100 according to the embodiment will be described. Figures 17 and 18 show examples of operation of the substrate processing apparatus 100 according to the first modified example.

[0096] In the embodiment described above, an example was explained in which DIW is stored in the treatment tank 11 as a pre-rinsing treatment and multiple substrates W that have been brought in are immersed in the DIW. However, the substrate processing apparatus 100 does not necessarily require that multiple substrates W that have been brought in be immersed in the DIW.

[0097] For example, the control unit 81 places the multiple substrates W brought into the chamber 1 into the storage area 131 in an empty state (i.e., no DIW is stored therein) (see Figure 17). The control unit 81 may then, for example, omit the humidity control process (step S102) and, as a first IPA replacement process (step S103), control the vapor supply system 65 to supply liquid IPA from the second organic solvent nozzle 6 to the airtight space 13 (see Figure 18).

[0098] Thus, the substrate processing apparatus 100 according to the first modified example can suppress the rise in humidity in the airtight space 13 by omitting the pre-rinsing process. Therefore, the substrate processing apparatus 100 according to the first modified example can omit (or shorten) the humidity control process (step S102).

[0099] (Second variation) Next, a second modified example of the substrate processing apparatus 100 according to the embodiment will be described. Figures 19 to 22 show examples of operation of the substrate processing apparatus 100 according to the second modified example.

[0100] The substrate processing apparatus 100 may, for example, perform an IPA liquid film cleaning treatment after the rinsing treatment in step S109 and before the third IPA replacement treatment in step S110.

[0101] Specifically, after the rinsing process in step S109, the control unit 81 opens the valve 74 and supplies IPA liquid from the third organic solvent nozzle 7 to the liquid surface of the DIW stored in the treatment tank 11. As a result, a liquid film of IPA is formed on the liquid surface of the DIW (see Figure 19).

[0102] Next, the control unit 81 controls the moving mechanism 23 to raise the multiple substrates W, thereby allowing the IPA liquid film to pass through (see Figure 20).

[0103] In this way, by forming a liquid film of IPA on the surface of the DIW, the IPA present on the surface of the DIW can be deposited onto the surfaces of the substrates W during the subsequent process of removing the substrates W from the DIW. This reduces the amount of DIW remaining on the surface of the substrates W, thereby increasing the efficiency of DIW to IPA replacement.

[0104] The control unit 81 may also move multiple substrates W back and forth between the storage area 131 and the drying area 132, thereby passing the IPA liquid film over multiple substrates W multiple times.

[0105] Next, the control unit 81 opens valve 152 to discharge the DIW from the processing tank 11. The control unit 81 also opens valve 54 to supply IPA liquid from the first organic solvent nozzle 5 into the airtight space 13 (see Figure 21). This allows the IPA residue adhering to the multiple substrates W to be washed away.

[0106] Subsequently, the control unit 81 supplies IPA liquid from the first organic solvent nozzle 5 into the airtight space 13 while opening the valve 34 to store DIW in the treatment tank 11 (see Figure 22). As a result, multiple substrates W are immersed in the DIW, and the IPA adhering to the multiple substrates W is washed away by the DIW.

[0107] (Third variation) Next, a third modified example of the substrate processing apparatus 100 according to the embodiment will be described. Figures 23 and 24 show examples of operation of the substrate processing apparatus 100 according to the third modified example.

[0108] The substrate processing apparatus 100 may, for example, perform an IPA liquid film cleaning treatment after the rinsing treatment in step S109 and before the third IPA replacement treatment in step S110.

[0109] Specifically, after the rinsing process in step S109, the control unit 81 opens the valve 74 and supplies IPA liquid from the third organic solvent nozzle 7 to the liquid surface of the DIW stored in the treatment tank 11. As a result, a liquid film of IPA is formed on the liquid surface of the DIW (see Figure 23).

[0110] Next, the control unit 81 opens the valve 152 to discharge the DIW from the processing tank 11 (see Figure 24). As a result, the liquid level of the DIW decreases, and the position of the IPA liquid film also decreases. At this time, the IPA liquid film passes through multiple substrates W, and the IPA adheres to the surfaces of the multiple substrates W.

[0111] In this way, a liquid film of IPA is formed on the surface of the DIW, and then the liquid level of the DIW is lowered, allowing the IPA present on the DIW surface to adhere to the surfaces of multiple substrates W. This reduces the amount of DIW remaining on the surface of the substrates W, thereby increasing the efficiency of DIW to IPA replacement. The subsequent processing is the same as in the third modified example described above, so the explanation is omitted.

[0112] (Fourth variation) Next, a fourth modified example of the substrate processing apparatus 100 according to the embodiment will be described. Figure 25 is a schematic side view showing the configuration of the hydrophobic agent nozzle 4 and the second organic solvent nozzle 6 according to the fourth modified example.

[0113] As shown in Figure 25, the substrate processing apparatus 100 may have a connecting passage 90 that connects an intermediate portion of the supply passage 46 and an intermediate portion of the supply passage 66. The substrate processing apparatus 100 may also be equipped with a first valve 47, a second valve 67, and a third valve 91. The first valve 47 is provided in the supply passage 46. For example, the first valve 47 is provided between the connection portion between the supply passage 46 and the connecting passage 90 and the hydrophobic agent nozzle 4. The second valve 67 is provided in the supply passage 66. For example, the second valve 67 is provided between the connection portion between the supply passage 66 and the connecting passage 90 and the second organic solvent nozzle 6. The third valve 91 is provided in the connecting passage 90. These first valve 47, second valve 67, and third valve 91 correspond to examples of switching sections.

[0114] In the substrate processing apparatus 100 according to the fourth modified example, the control unit 81 can switch the destination of the IPA vapor outlet between the second organic solvent nozzle 6 and the hydrophobic agent nozzle 4 by controlling the first valve 47, the second valve 67, and the third valve 91. That is, the control unit 81 can discharge IPA vapor from the second organic solvent nozzle 6 by closing the first valve 47 and the third valve 91 and opening the second valve 67. On the other hand, the control unit 81 can discharge IPA vapor from the hydrophobic agent nozzle 4 by closing the second valve 67 and opening the first valve 47 and the third valve 91.

[0115] As a result, the substrate processing apparatus 100 according to the fourth modified example can remove any hydrophobic agent remaining in the hydrophobic agent nozzle 4 and the supply passage 46 using IPA vapor.

[0116] Furthermore, the control unit 81 may alternately switch the destination of the IPA vapor outlet between the second organic solvent nozzle 6 and the hydrophobic agent nozzle 4 during the chamber cleaning process (step S108) and the third IPA replacement process (step S110). This allows the IPA vapor to spread evenly throughout the drying region 132.

[0117] As described above, the substrate processing apparatus according to the embodiment (for example, the substrate processing apparatus 100) is a substrate processing apparatus that collectively dries multiple wet substrates (for example, substrates W). The substrate processing apparatus according to the embodiment comprises a chamber (for example, chamber 1), a holding unit (for example, holding unit 2), a hydrophobic agent nozzle (for example, hydrophobic agent nozzle 4), a first organic solvent nozzle (for example, first organic solvent nozzle 5), a second organic solvent nozzle (for example, second organic solvent nozzle 6), and an exhaust port (for example, exhaust port 16). The chamber has an airtight space (for example, airtight space 13) capable of accommodating multiple substrates. The holding unit raises and lowers multiple substrates between a storage region (for example, storage region 131) in the airtight space where a liquid (for example, DIW) is stored, and a drying region (for example, drying region 132) located above the storage region in the airtight space. The hydrophobic agent nozzle supplies hydrophobic agent vapor to the dry area. The first organic solvent nozzle supplies an organic solvent (for example, IPA liquid) from the dry area to the storage area. The second organic solvent nozzle supplies organic solvent vapor (for example, IPA vapor) to the dry area. The exhaust port discharges the gas from the airtight space.

[0118] The substrate processing apparatus according to this embodiment can remove hydrophobic agents adhering to the inner wall of the chamber using organic solvent vapor supplied from a second organic solvent nozzle. This suppresses the adhesion of hydrophobic agent residue to the inner wall of the drying chamber, thereby suppressing the transfer of hydrophobic agent residue from the chamber to the substrate. Therefore, the substrate processing apparatus according to this embodiment can suppress pattern collapse caused by particle adhesion to the substrate.

[0119] The first organic solvent nozzle and the second organic solvent nozzle may be positioned above the hydrophobic agent nozzle.

[0120] By positioning the second organic solvent nozzle above the hydrophobic agent nozzle, the inner wall located relatively high up in the chamber can be efficiently cleaned using organic solvent vapor. Furthermore, by positioning the first organic solvent nozzle above the hydrophobic agent nozzle, the inner wall located relatively low down in the chamber can be efficiently cleaned.

[0121] The second organic solvent nozzle may supply organic solvent vapor upward or diagonally upward. This configuration allows for efficient cleaning of the inner wall located relatively high up in the chamber.

[0122] The substrate processing apparatus according to the embodiment includes a connection path (for example, a connection path 90) and a switching unit (for example, a first valve 47, a second valve 67, and a third valve 91). The connection path connects an intermediate section of a second organic solvent supply path (for example, a supply path 66) that supplies organic solvent vapor to a second organic solvent nozzle, and an intermediate section of a hydrophobic agent supply path (for example, a supply path 46) that supplies a hydrophobic agent to a hydrophobic agent nozzle. The switching unit switches the outlet destination of the organic solvent vapor between the second organic solvent nozzle and the hydrophobic agent nozzle.

[0123] This configuration allows for more thorough cleaning of the inner wall of the chamber. Furthermore, any hydrophobic agent remaining inside the hydrophobic agent supply channel can be removed by the vapor of an organic solvent. This prevents the accumulation of hydrophobic agent residue inside the hydrophobic agent supply channel and the transfer of any hydrophobic agent residue from the supply channel onto the substrate. Consequently, the substrate processing apparatus according to this embodiment can further suppress pattern collapse caused by particle adhesion onto the substrate.

[0124] The substrate processing apparatus according to this embodiment may include a first vaporizer (for example, a steam supply system 65) for vaporizing a hydrophobic agent and a second vaporizer (for example, a steam supply system 45) for vaporizing an organic solvent.

[0125] This configuration allows the hydrophobic agent and the organic solvent to be vaporized under appropriate conditions (temperature, etc.).

[0126] The first organic solvent nozzle may spray the organic solvent in a conical or fan shape.

[0127] This configuration allows for efficient supply of organic solvent to multiple substrates, as well as efficient supply of organic solvent to the inner wall of the chamber.

[0128] The hydrophobic agent nozzle and the second organic solvent nozzle each comprise a main body (for example, main body parts 41, 61) and a plurality of discharge holes (for example, discharge ports 42, 62). The main body is a cylindrical member that extends along the arrangement direction of the plurality of substrates. The plurality of discharge holes are formed at intervals along the arrangement direction of the plurality of substrates relative to the main body.

[0129] With this configuration, the vapors of the hydrophobic agent and the organic solvent can be supplied into the chamber with a relatively simple setup.

[0130] The exhaust port may be positioned above the hydrophobic agent nozzle. This configuration allows for efficient discharge of steam that has accumulated in the drying area.

[0131] Furthermore, the substrate processing method according to the embodiment is a substrate processing method that dries multiple wet substrates at once. The substrate processing method according to the embodiment includes a first placement step (step S101 as an example), a first replacement step (step S103 as an example), a second placement step (step S104 as an example), a second replacement step (step S105 as an example), a third placement step (step S106 as an example), a third replacement step (step S107 as an example), and a chamber cleaning step (step S108 as an example). In the first placement step, multiple substrates are placed in the storage area of ​​a chamber that is capable of accommodating multiple substrates and has an airtight space including a storage area where liquid is stored and a drying area located above the storage area. In the first replacement step, after the first placement step, an organic solvent is supplied to the multiple substrates from a first organic solvent nozzle to replace the liquid adhering to the multiple substrates with the organic solvent. The second placement step involves placing multiple substrates in the drying area after the first replacement step. The second replacement step involves supplying hydrophobic agent vapor from a hydrophobic agent nozzle to the multiple substrates after the second placement step to replace the organic solvent adhering to the multiple substrates with the hydrophobic agent. The third placement step involves placing multiple substrates in the storage area after the second replacement step. The third replacement step involves supplying organic solvent from a first organic solvent nozzle to the multiple substrates after the third placement step to replace the hydrophobic agent adhering to the multiple substrates with the organic solvent. The chamber cleaning step involves storing liquid (DIW, for example) in the storage area after the third replacement step, immersing the multiple substrates in the liquid, and then supplying organic solvent vapor from a second organic solvent nozzle to the drying area to clean the chamber.

[0132] Therefore, according to the substrate processing method of the embodiment, it is possible to suppress pattern collapse caused by the adhesion of particles on the substrate.

[0133] The first placement step may involve placing multiple substrates in a storage area where liquid is stored, thereby immersing the multiple substrates in the liquid. Furthermore, the substrate processing method according to the embodiment may further include a humidity control step (for example, step S102) in which a dry gas (for example, hot N2 gas) is supplied to a dry area at least after the first placement step and before the second replacement step.

[0134] This configuration makes it possible to suppress the deactivation of the hydrophobic agent.

[0135] The first substitution step may involve moving multiple substrates from a storage area to a drying area while supplying an organic solvent to the multiple substrates from a first organic solvent nozzle.

[0136] This configuration allows for the even distribution of organic solvent to multiple substrates.

[0137] The first substitution step may involve supplying an organic solvent from a first organic solvent nozzle to multiple substrates while moving the multiple substrates back and forth at least once between the storage region and the drying region.

[0138] This configuration allows for a more even supply of the organic solvent to multiple substrates.

[0139] The first replacement step may involve moving multiple substrates at a speed of 1 mm / sec to 300 mm / sec.

[0140] By moving multiple substrates at a relatively slow speed, the organic solvent can be supplied more evenly to the multiple substrates.

[0141] The third substitution step may involve moving multiple substrates from the storage area to the drying area while supplying the organic solvent to the multiple substrates from the first organic solvent nozzle.

[0142] This configuration allows for the even distribution of organic solvent to multiple substrates.

[0143] The third substitution step may involve supplying an organic solvent from the first organic solvent nozzle to multiple substrates while moving the multiple substrates back and forth at least once between the storage region and the drying region.

[0144] This configuration allows for a more even supply of the organic solvent to multiple substrates.

[0145] The third replacement step may involve moving multiple substrates at a speed of 1 mm / sec to 300 mm / sec.

[0146] By moving multiple substrates at a relatively slow speed, the organic solvent can be supplied more evenly to the multiple substrates.

[0147] The first placement step may involve placing multiple substrates in an empty storage area.

[0148] Compared to immersing multiple substrates in a liquid stored in a storage area, the humidity in the dry area does not rise as easily, thus suppressing the deactivation of the hydrophobic agent.

[0149] The substrate processing method according to this embodiment may include an immersion step, a liquid film formation step, and a passing step. In the immersion step, after the third replacement step and before the chamber cleaning step, a liquid (DIW, for example) is stored in a storage area and multiple substrates are immersed in the liquid. In the liquid film formation step, after the immersion step and before the chamber cleaning step, a liquid film of an organic solvent is formed on the surface of the liquid stored in the storage area. In the passing step, after the liquid film formation step and before the chamber cleaning step, the multiple substrates are moved from the storage area to a drying area, thereby passing the liquid film through them.

[0150] This allows for a more even distribution of the organic solvent to multiple substrates.

[0151] The passing process may involve passing multiple substrates back and forth between the storage region and the drying region at least once.

[0152] This allows for a more even distribution of organic solvents to multiple substrates.

[0153] The substrate processing method according to the embodiment may include an immersion step, a liquid film formation step, and a passing step. In the immersion step, after the third replacement step and before the chamber cleaning step, a liquid (DIW, for example) is stored in a storage area and multiple substrates are immersed in the liquid. In the liquid film formation step, after the immersion step and before the chamber cleaning step, a liquid film of an organic solvent is formed on the surface of the liquid stored in the storage area. In the passing step, after the liquid film formation step and before the chamber cleaning step, the liquid stored in the storage area is discharged from the storage area to lower the position of the liquid film and allow the multiple substrates to pass through.

[0154] This allows for a more even distribution of organic solvents to multiple substrates.

[0155] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0156] 1 Chamber 2 Holding part 3. Rinse nozzle 4. Hydrophobic agent nozzle 5. First Organic Solvent Nozzle 6. Second Organic Solvent Nozzle 7. Third Organic Solvent Nozzle 8 Control device 11 Processing tank 12 Lid 13. Airtight space 14. Sealing member 15 Drain port 16 Exhaust vents 32 Rinse solution supply source 45 Steam supply system 52 Sources of organic solvents 65 Steam supply system 72 Organic solvent sources 81 Control Unit 82 Memory section 100 Substrate Processing Equipment 131 Storage Area 132 Dry area 451 Hydrophobic agent supply source 452 Gas supply source 651 Sources of organic solvents 652 Gas supply source W board

Claims

1. A substrate processing method for simultaneously drying a plurality of wet substrates, comprising the steps of: a first arrangement step of arranging the plurality of substrates in a storage area of ​​the chamber, the storage area being capable of accommodating the plurality of substrates and having an airtight space including a storage area for storing a liquid and a dry area located above the storage area; a first substitution step of supplying an organic solvent from a first organic solvent nozzle to the plurality of substrates after the first disposing step, thereby substituting the liquid adhering to the plurality of substrates with the organic solvent; a second placement step of placing the plurality of substrates in the dry area after the first replacement step; a second substitution step of supplying vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates after the second disposing step, thereby substituting the organic solvent adhering to the plurality of substrates with the hydrophobizing agent; a third placement step of placing the plurality of substrates in the storage area after the second replacement step; a third substitution step of supplying an organic solvent from the first organic solvent nozzle to the plurality of substrates after the third disposing step, thereby substituting the hydrophobizing agent attached to the plurality of substrates with the organic solvent; a chamber cleaning step of storing a liquid in the storage area after the third substitution step, and supplying vapor of an organic solvent from a second organic solvent nozzle to the drying area while the plurality of substrates are immersed in the liquid, thereby cleaning the chamber; A substrate processing method comprising:

2. the first placement step includes placing the plurality of substrates in the storage region where a liquid is stored and immersing the plurality of substrates in the liquid; a humidity control step of supplying a dry gas to the drying region at least during a period from after the first arrangement step to before the second replacement step; The substrate processing method of claim 1 , further comprising:

3. 3. The substrate processing method according to claim 1, wherein the first replacing step comprises supplying the organic solvent from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are being moved from the storage region to the drying region.

4. 4. The substrate processing method according to claim 3, wherein the first replacing step supplies the organic solvent from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are reciprocated at least once between the storage region and the drying region.

5. 5. The substrate processing method according to claim 3, wherein the first replacing step moves the plurality of substrates at a speed of 1 mm / sec or more and 300 mm / sec or less.

6. 6. The substrate processing method according to claim 1, wherein the third substitution step supplies the organic solvent from the first organic solvent nozzle to the plurality of substrates while moving the plurality of substrates from the storage region to the drying region.

7. 7. The substrate processing method according to claim 6, wherein the third replacing step supplies the organic solvent from the first organic solvent nozzle to the plurality of substrates while the plurality of substrates are reciprocated at least once between the storage region and the drying region.

8. 8. The substrate processing method according to claim 6, wherein the third replacing step moves the plurality of substrates at a speed of 1 mm / sec or more and 300 mm / sec or less.

9. The substrate processing method according to claim 1 , wherein the first placing step places the plurality of substrates in the empty storage area.

10. an immersion step of storing a liquid in the storage region and immersing the plurality of substrates in the liquid after the third substitution step and before the chamber cleaning step; a liquid film forming step of forming a liquid film of an organic solvent on a surface of the liquid stored in the storage region after the immersion step and before the chamber cleaning step; a passing step of passing the plurality of substrates through the liquid film by moving them from the storage area to the drying area after the liquid film forming step and before the chamber cleaning step; The substrate processing method according to any one of claims 1 to 9, further comprising:

11. The substrate processing method according to claim 10 , wherein the passing step includes making the plurality of substrates reciprocate at least once between the storage area and the drying area.

12. an immersion step of storing a liquid in the storage region and immersing the plurality of substrates in the liquid after the third substitution step and before the chamber cleaning step; a liquid film forming step of forming a liquid film of an organic solvent on a surface of the liquid stored in the storage region after the immersion step and before the chamber cleaning step; a passing step of lowering the position of the liquid film by discharging the liquid stored in the storage area from the storage area after the liquid film forming step and before the chamber cleaning step, and passing the plurality of substrates; The substrate processing method according to any one of claims 1 to 9, further comprising:

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