Substrate processing apparatus and temperature control method using multi-zone heat transfer structure

Abstract

This embodiment provides a substrate processing apparatus and a multi-zone temperature control method in which a multi-zone heat transfer adjustment structure is provided between a base structure to which a coolant is supplied and a substrate, and heat that may be generated between the substrate and the electrostatic chuck and the base structure or between a specific structure is blocked or transferred using pressure changes in a heat transfer gas, thereby facilitating temperature adjustment of the substrate during or after processing.

Description

[Technical field]

[0001] The technical field to which the present invention pertains relates to a substrate processing apparatus and a temperature control method. [Background technology]

[0002] The material described in this section is merely intended to provide background information regarding the present invention and may not constitute prior art.

[0003] In semiconductor processes such as etching and deposition, the temperature of a substrate located on an electrostatic chuck (ESC) can be controlled by a method of supplying a coolant to a base structure that includes a coolant channel located under the ESC and can be used as an RF (Radio Frequency) electrode to prevent the temperature from increasing due to energy such as plasma, light, and heater during the process.

[0004] As the difficulty of existing processes such as etching and deposition increases, the base structure located under the electrostatic chuck is faced with process situations that require the composition of (i) high temperatures of 100°C or higher, (ii) low temperatures between -100°C and 0°C or lower, or (iii) cryogenic environments of -100°C or lower.

[0005] Even after the process is completed, the temperature of the substrate may be (i) high temperature of 100°C or higher, (ii) low temperature of -100°C to 0°C or lower, or (iii) extremely low temperature of -100°C or lower. When the substrate is transferred outside the chamber at a low temperature of -100°C to 0°C or extremely low temperature of -100°C or lower, problems such as condensation due to water vapor and particle adsorption may occur on the substrate.

[0006] During processing, when the substrate temperature is changed from a low temperature of -100°C or above to a cryogenic temperature of -100°C or below, or from a cryogenic temperature of -100°C or below to a low temperature of -100°C or above to a low temperature of -100°C or above to a low temperature of 0°C or below, not only does it take a relatively long time to change the temperature of the coolant supplied from the chiller, but it is also difficult to change the temperature over a wide range from a cryogenic temperature of -100°C or below to a temperature above 0°C. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Korean Patent Publication No. 10-2020-0096145 (2020.08.11) [Patent Document 2] Korean Patent Registration No. 10-2106419 (2020.04.24) Summary of the Invention [Problem to be solved by the invention]

[0008] A main object of the present invention is to provide a multi-zone heat transfer control structure between a base structure to which a coolant is supplied and a substrate in a substrate processing apparatus, and to utilize pressure changes in a heat transfer gas to block or transfer heat that may be generated between the substrate and electrostatic chuck and the base structure or between specific structures, thereby facilitating temperature control of the substrate during or after processing.

[0009] Other objects of the present invention that are not explicitly stated can be further considered within the scope that can be easily inferred from the following detailed description and its effects. [Means for solving the problem]

[0010] According to one aspect of the present embodiment, there is provided a substrate processing apparatus including a chamber, a substrate holder located inside the chamber and provided with an electrostatic chuck that fixes a substrate using electrostatic force, a base structure located inside the chamber and having a channel formed therein, a heat transfer control structure located between the substrate holder and the base structure and having a plurality of internal spaces, a substrate gas supply device connected to the substrate holder and supplying a substrate gas, a chucking power supply device connected to the electrostatic chuck and supplying chucking power to the electrostatic chuck, a heat transfer gas control device connected to the heat transfer control structure and supplying a heat transfer gas, a radio frequency power supply device connected to the base structure and supplying radio frequency power, and a coolant supply device connected to the channel and supplying a coolant.

[0011] The substrate holder may include a heat structure for adjusting a temperature of the substrate, and the substrate processing apparatus may include a heat power supply device for supplying heat power to the heat structure.

[0012] The heat transfer control structure may have the multiple internal spaces defined by an upper plate, a lower plate, side walls, and a partition wall, and the heat transfer gas may flow in or out through a gas port connected to the upper plate, the lower plate, the side walls, or a combination thereof.

[0013] The heat transfer regulating structure may be divided into an internal source and an external source by the separation wall.

[0014] The substrate processing apparatus may include a temperature measuring device connected to the upper plate of the heat transfer control structure to measure an upper plate temperature, connected to the lower plate of the heat transfer control structure to measure a lower plate temperature, and connected to the base structure to measure a temperature of the base structure.

[0015] The difference in thermal expansion coefficient between the heat transfer control structure and the base structure may be set to within ±50%.

[0016] The heat transfer gas control device is in data communication with the temperature measurement device and can adjust the difference between the upper plate temperature and the lower plate temperature to within a preset range.

[0017] The sidewall of the heat transfer adjustment structure may be formed in a curvilinear structure.

[0018] The heat transfer adjustment structure may include a plurality of support columns between the upper plate and the lower plate.

[0019] The lower surface of the upper plate and the upper surface of the lower plate of the heat transfer adjustment structure may be formed with a spike structure.

[0020] The lower surface of the upper plate and the upper surface of the lower plate of the heat transfer adjustment structure may be formed with a fin structure.

[0021] The lower surface of the upper plate and the upper surface of the lower plate of the heat transfer adjustment structure may be formed with an embossed structure.

[0022] The heat transfer gas control device can supply or exhaust the heat transfer gas to the heat transfer regulating structure through a single gas port in a time-separated manner.

[0023] The heat transfer gas control device can supply or exhaust the heat transfer gas to the heat transfer adjustment structure through a plurality of gas ports that are separated according to a spatial separation scheme.

[0024] The heat transfer gas control device may adjust a pressure of the heat transfer gas to control a temperature change in a plurality of internal spaces of the heat transfer control structure.

[0025] The heat transfer regulating structure can vary the amount of heat transfer between the upper plate and the lower plate in response to a change in pressure of the heat transfer gas, thereby controlling a heat transfer time.

[0026] According to another aspect of the present embodiment, there is provided a multi-zone temperature control method using a heat transfer adjusting structure, the multi-zone temperature control method including the steps of: installing the heat transfer adjusting structure between a heat source and a heat sink; supplying a first heat transfer gas to a first internal space of the multi-zones of the heat transfer adjusting structure; supplying a second heat transfer gas to a second internal space of the multi-zones of the heat transfer adjusting structure; adjusting a pressure of the first heat transfer gas; adjusting a pressure of the second heat transfer gas; and controlling a heat transfer time by varying an amount of heat transfer between the heat source and the heat sink in response to a change in pressure of the first heat transfer gas and a change in pressure of the second heat transfer gas. Effect of the Invention

[0027] As described above, according to the embodiments of the present invention, a multi-zone heat transfer control structure is provided between a base structure to which a coolant is supplied and a substrate in a substrate processing apparatus, and heat that may be generated between the substrate and the electrostatic chuck and the base structure or between specific structural objects can be blocked or transferred by utilizing pressure changes in a heat transfer gas, thereby making it easy to control the temperature of the substrate during or after processing.

[0028] Even if an effect is not explicitly mentioned herein, the effects and provisional effects thereof described in the following specification that are expected by the technical features of the present invention are treated as if they were described in the specification of the present invention. [Brief description of the drawings]

[0029] [Figure 1] 1 is a block diagram illustrating a substrate processing apparatus according to one embodiment of the present invention; [Figure 2-3] 1 is a diagram illustrating a structure of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4-13] 1 is a diagram illustrating a heat transfer adjusting structure of a substrate processing apparatus according to an embodiment of the present invention; [Figure 14-16] 1 illustrates a heat transfer gas control system for a substrate processing apparatus according to an embodiment of the present invention. [Figure 17-18] 4 is a flowchart illustrating a temperature control method according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Hereinafter, when describing the present invention, detailed descriptions of related known functions will be omitted if it is determined that such functions are self-evident to a person skilled in the art and may unnecessarily obscure the gist of the present invention. Instead, some embodiments of the present invention will be described in detail with reference to illustrative drawings.

[0031] In the present embodiment, in a substrate processing apparatus including an electrostatic chuck (ESC) used in semiconductor processes such as etching and deposition, the amount of heat transfer is varied by utilizing a pressure change of a heat transfer gas in a heat transfer control structure to control the temperature of the substrate.

[0032] According to this embodiment, during or after a semiconductor process using plasma, a heater, etc., heat that may be generated between a base structure containing a coolant supplied by a chiller inside a substrate processing apparatus and a substrate and an electrostatic chuck, or between the substrate and an electrostatic chuck and a base structure or a specific structure can be transferred or blocked through a heat transfer control structure located between the base structure and the substrate and an electrostatic chuck or between the specific structure.

[0033] The heat transfer control structure is fabricated or inserted into a substrate processing apparatus or a single structure or between multiple structures to control heat transfer that may occur due to a temperature difference between a heat source and a heat sink. It can be used even when the temperature of the heat source or heat sink is extremely low, below -100°C, low, between -100°C and 0°C, or above 0°C.

[0034] The heat transfer adjusting structure may be applied to a variety of technical fields requiring heat transfer adjustment between specific structures, in addition to substrate processing equipment.

[0035] FIG. 1 is a block diagram illustrating a substrate processing apparatus according to one embodiment of the present invention, FIG. 2 is a diagram illustrating the structure of a substrate processing apparatus having a single heat transfer space according to one embodiment of the present invention, and FIG. 3 is a diagram illustrating the structure of a substrate processing apparatus having a multi-zone heat transfer space according to another embodiment of the present invention.

[0036] Taking the substrate processing apparatus as an example, the substrate processing apparatus 10 includes a substrate holder 300 , a heat transfer control structure 500 , and a base structure 700 .

[0037] The substrate processing apparatus 10 may be located within a chamber 100, the interior of which may be maintained at atmospheric pressure or at vacuum by a vacuum system.

[0038] The substrate holder 300 is located inside the chamber and is provided with an electrostatic chuck 400 that fixes the substrate using electrostatic force. A substrate gas supply unit 350 is connected to the substrate holder and supplies gas to the rear surface of the substrate. A chucking power supply unit 450 is connected to the electrostatic chuck and supplies chucking power to the electrostatic chuck.

[0039] The substrate holder 300 may include a heat structure 900 for adjusting the temperature of the substrate. The substrate processing apparatus 10 may include a heat power supply device 950 for supplying heat power to the heat structure.

[0040] The heat transfer conditioning structure 500 is located between the substrate holder 300 and the base structure 700 and has a single interior space. The heat transfer conditioning structure 500 may have multiple interior spaces. The heat transfer gas control device 600 is coupled to the heat transfer conditioning structure and supplies a heat transfer gas.

[0041] A base structure 700 is disposed inside the chamber and has a channel 800. A high frequency power supply 750 is connected to the base structure to supply high frequency power. A coolant supply 850 is connected to the channel to supply coolant.

[0042] The electrostatic chuck generates an electric force (e.g., Coulomb force, Johnsen-Rabek force) in the space formed on the substrate to fix the substrate position. The substrate temperature and temperature uniformity are controlled by the substrate rear gas supplied by the substrate gas supply device in the space formed.

[0043] The substrate rear gas supplied from the substrate gas supply device 350 is sprayed between the substrate holder 300 and the substrate, and can adjust the heat transfer occurring between the substrate holder 300 and the substrate. In the absence of the heat transfer control structure 500, the substrate rear gas is supplied to the base structure 500 at a relatively low temperature, such as a low temperature of -100°C to 0°C or a cryogenic temperature of -100°C or less, and the substrate temperature is not increased by the heater structure of the substrate holder 300. On the other hand, when the heat transfer control structure 500 is formed between the base structure 700 and the substrate holder 300, the heat transfer between the substrate holder 300 and the relatively low temperature coolant, such as a low temperature of -100°C to 0°C or a cryogenic temperature of -100°C or less, and the substrate holder 300, can be effectively controlled, and the temperatures of the substrate holder 300 and the substrate can be increased by the heater structure. For example, if the heat transfer space inside the heat transfer control structure is in a vacuum state, the base structure 700 and the substrate holder 300 are in a vacuum insulated state with almost no heat transfer, and the heat generated from the structure can be efficiently transferred to the substrate.

[0044] The heat transfer gas of the heat transfer control structure 500 can control a wider range of gas pressure than the substrate rear gas. The substrate rear gas preferably has a gas pressure between about 1 Torr and 100 Torr, and at relatively high pressures, the substrate rear gas may leak or the substrate may detach. The substrate rear gas leak may affect the plasma composition during the process, which may adversely affect the process. On the other hand, the heat transfer gas of the heat transfer control structure can perform the process without leaking the heat transfer gas at a relatively low or high pressure from a vacuum of 10 mTorr or less to 760 Torr or more.

[0045] The substrate backside gas may be, for example, a gas having thermal conductivity such as helium, nitrogen, argon, etc. It is preferable to use helium since helium has the best thermal conductivity.

[0046] The electrostatic chuck is mainly made of a dielectric material, and has a chucking electrode embedded in it. A typical example of the dielectric material is Al. 2 O 3 , Doped-Al 2 O 3 , AlN, etc., and the volume resistivity of the dielectric material may be 1 to 10 ohms x cm. The chucking electrode may be a mono-polar electrode or a bi-polar electrode, and may be implemented with a metal material (e.g., Mo, W, etc.).

[0047] The chucking power supply can be realized by a filter and a direct current (DC) power supply or an alternating current (AC) power supply. For example, 13An in-space voltage is generated using an in-space chucking power supply device formed between the electrostatic chuck made of a dielectric material of ohms*cm and the substrate on which the electrostatic chuck is positioned, and the substrate position can be fixed on the electrostatic chuck using an electric force. The electric force can be a Johnson-Rahbek force. Since the Johnson-Rahbek force depends on the temperature of the electrostatic chuck, it can be a Johnson-Rahbek force or a Coulomb force when the electrostatic chuck temperature changes. For example, in the resistivity range (<10 13 A chucking power supply system g can be used to fix the electrostatic chuck made of a dielectric material of ohms*cm and the substrate position on the electrostatic chuck. The chucking power supply generates a voltage on the electrostatic chuck, and the substrate position can be fixed on the electrostatic chuck using an electric force. The electric force can be a Coulomb force. The Coulomb force depends on the temperature of the electrostatic chuck, and therefore can be a Coulomb force or a Johnsen-Rahbek force when the temperature of the electrostatic chuck changes.

[0048] The diameter of the substrate may be 300 mm, 200 mm, etc., and the diameter of the electrostatic chuck may be equal to or smaller than the diameter of the substrate. The electrostatic chuck may have a gas supply line (e.g., a microhole) to the rear surface of the substrate outside the chucking electrode. The surface roughness (Ra) of the electrostatic chuck may be in the range of, for example, ≦0.3. The electrostatic chuck may be fabricated as one body with the heater structure.

[0049] The substrate gas supply can be controlled by a gas supply that includes multiple gas lines, if desired.

[0050] The thermal expansion coefficients of dielectric and metal structures in a substrate processing apparatus are less affected by temperature changes when they are bonded together if the difference is within ±50%. For example, Al, which is the dielectric material of an electrostatic chuck, 2 O 3 The thermal expansion coefficient of is about 10×10 -6 / k, and the dielectric material of the electrostatic chuck is Al 2 O 3 The thermal expansion coefficient of the combined structure is 5×10 -6 / k~15×10 -6 It is preferred that the value of k is between 0.1 and 0.2.

[0051] The heater structure can be used to control the temperature and temperature uniformity of the substrate in a position fixed by the electrostatic chuck. The heater structure can be made of a dielectric material, and a heating electrode can be embedded in the dielectric material. The heating electrode embedded to control the temperature and temperature uniformity of the substrate can be one or more, and can have a suitable heating electrode pattern. The dielectric material can be AlN, etc., and the heating electrode constituent material can be SiC, W, etc.

[0052] The heater power supply device can be realized as a filter and a direct current (DC) power supply device or an alternating current (AC) power supply device. For example, the heater power supply device is used to supply power (P=I 2 R) When supplied, the heater temperature and temperature uniformity are controlled, and the temperature and temperature uniformity of the substrate are controlled. The heater structure may be integrated with the electrostatic chuck.

[0053] The base structure is made of a metal material and can be used as an electrode by receiving power from an RF power supply device including an external RF (Radio Frequency) power supply source via a connector through an RF matching system, and can generate plasma through the electrode. For example, the base structure may be made of metal such as aluminum or titanium alloy. The device can be applied to a reactive ion etching (RIE) reactor, etc. The base structure may have a plurality of holes penetrating the base structure. The plurality of holes may be used for gas supply, temperature measurement mechanism, or connector penetrating the upper part of the base structure for temperature measurement and power supply. The connector may be connected to a structure such as an upper chucking electrode or a heater by penetrating the base structure.

[0054] The base structure can be used for cooling an electrostatic chuck or a substrate that is heated to a high temperature. In a process using plasma, when a substrate is exposed to plasma, the temperature of the substrate may increase due to energy supply such as ion bombardment or radiation to the substrate. If the temperature of the substrate increases, damage to the substrate or non-uniformity of the process result may increase, so it may be necessary to cool the substrate.

[0055] The base structure may be formed with a channel through which a coolant flows for cooling. The coolant injected into the coolant channel of the base structure may be water, ethylene glycol, liquid Teflon, or other coolant. Depending on the substrate, the coolant may be an organic solvent such as hydrofluoroether or Galden solution to form a low temperature of -100°C or more and 0°C or less, or liquid nitrogen, liquid methane, liquid argon, or other coolant to form an extremely low temperature of -100°C or less. In this case, the coolant supplied to the base structure may be supplied using a coolant supply device including a chiller outside the chamber.

[0056] The coolant can absorb not only the heat generated in the substrate, but also the heat generated in response to the power applied to the base structure.

[0057] As for typical components formed on the base structure, components such as lift pins for unloading the substrate are not shown in the figure.

[0058] 4 to 13 are diagrams illustrating heat transfer adjusting structures of substrate processing apparatuses according to embodiments of the present invention.

[0059] 4 shows a structure in which a heat transfer adjusting structure having a single heat transfer space 511 is inserted into a heat transfer adjusting structure insertion space formed in a base structure 700. FIG 5 shows a structure in which a heat transfer adjusting structure having multi-zone heat transfer spaces 521, 522 separated by a separation wall 525 is inserted into a heat transfer adjusting structure insertion space formed in a base structure 700.

[0060] The heat transfer adjusting structure may be manufactured separately from the substrate processing apparatus and inserted into a heat transfer adjusting structure insertion space formed in the base structure. The heat transfer adjusting structure and the base structure may be connected by welding or mechanical connection as necessary. The mechanical connection may be, for example, connection using bolts. The heat transfer adjusting structure may be manufactured integrally with the base structure, instead of being inserted into a heat transfer adjusting structure insertion space formed in the base structure.

[0061] The heat transfer control structure disposed inside the substrate processing apparatus can block or transfer heat generated between a heat source and a heat sink as necessary, and can facilitate temperature control of the substrate during or after processing. For example, the substrate temperature can be varied from room temperature to cryogenic temperatures using the heat transfer control structure.

[0062] The heat source may be a structure having a higher temperature than the heat sink. For example, the heat source may be a substrate having a specific temperature or a substrate whose temperature is continuously increasing due to receiving energy such as light or plasma, a substrate after processing, a heater, etc. The heat sink may be a structure having a lower temperature than the heat source. For example, the heat sink may be a base structure including a coolant inside the substrate processing apparatus, a structure having a lower temperature than the heat source, etc.

[0063] When the heat transfer space inside the heat transfer control structure located between the heat source and the heat sink is in a vacuum state, the heat flowing from the upper plate to the lower plate can be relatively completely blocked by the vacuum insulation effect. For example, when the temperature of the heat source in contact with the upper plate is a low temperature between -100°C and 0°C or a temperature above 0°C, and the temperature of the heat sink in contact with the lower plate is an extremely low temperature below -100°C that does not change, the temperature of the heat source in contact with the upper plate may be a low temperature between -100°C and 0°C or a temperature above 0°C.

[0064] When a heat transfer space inside the heat transfer control structure located between the heat source and the heat sink is supplied with a high pressure heat transfer gas and has a sufficiently large thermal conductivity of about 5 W / K or more, the increase in pressure in the heat transfer space can facilitate the heat transfer between the heat source and the heat sink through the effect of increasing the thermal conductivity. For example, when the temperature of the heat sink in contact with the lower plate remains unchanged at extremely low temperatures of -100°C or less, the temperature of the heat source in contact with the upper plate can become the same as that of the heat sink at extremely low temperatures of -150°C or less.

[0065] The temperature of the heat source can be varied by changing the amount of heat transfer between the heat source and the heat sink due to a change in the heat transfer gas pressure in the heat transfer space inside the heat transfer control structure located between the heat source and the heat sink.

[0066] 6 to 9 show the structure of a heat transfer adjustment structure having a single heat transfer space 511. FIG.

[0067] FIG. 6 shows a case where the heat transfer regulating structure has one heat transfer port and a case where the heat transfer regulating structure has two or more heat transfer ports.

[0068] The heat transfer control structure includes an upper plate 531, a lower plate 532, a side wall 533, a heat transfer space, and a heat transfer gas port 534. The heat transfer gas port may be a heat transfer gas supply port or a heat transfer gas exhaust port, which may be a single port or a plurality of ports for supplying and exhausting the heat transfer gas. The upper plate and the lower plate have a thickness of about 0.5 to 10 mm and are made of a metal material. For example, they may be aluminum, stainless steel, or other metals and alloys. However, depending on the material, the upper plate and the lower plate may be made as a continuous one with the heat source and the heat sink as necessary.

[0069] The upper and lower plates of the heat transfer control structure may be located between a heat source having a specific temperature and a heat sink. When the heat source and the heat sink in contact with the heat transfer control structure have different temperatures and the heat transfer space has a variable thermal conductivity and heat transfer coefficient, variable heat transfer may occur between the heat source and the heat sink. In this case, the thinner the thickness of the upper and lower plates, the more favorable the heat transfer between the heat source and the heat sink.

[0070] The lower the surface roughness of the upper and lower plates of the heat transfer adjustment structure, the more advantageous it may be for heat transfer between the heat source and the heat sink. For example, the surface roughness of the upper and lower plates can be reduced by a polishing process during the manufacture of the heat transfer adjustment structure.

[0071] The contents regarding the side wall of the heat transfer adjustment structure and the heat transfer space structure can also be applied to the case where one or more heat transfer gas ports 535, 536 are connected to the heat transfer space.

[0072] FIG. 7 shows an elliptical structure of a side wall connecting the upper plate and the lower plate of the heat transfer control structure. The upper plate and the lower plate may be connected via a side wall to form a heat transfer space therein. The side wall separates the heat transfer space of the heat transfer control structure from the external environment, except for the heat transfer gas port included in the heat transfer control structure. The side wall may be a type that connects the upper plate and the lower plate in a straight line, or may have a special shape other than a straight line. For example, the side wall may be an ellipse or a shape of three consecutive ellipses.

[0073] FIG. 8 shows various structures of the heat transfer control structure, such as a spike structure, a fin structure, and an embossing structure of the heat transfer space inside the heat transfer control structure. The heat transfer space of the heat transfer control structure is usually spaced at intervals of 3 to 3000 μm, and preferably at intervals of 50 μm or less. In this case, the heat transfer space may be embodied as a spike structure, a fin structure, an embossing structure, or the like for increasing the contact area with the heat transfer gas, in addition to a flat structure. Increasing the contact area of ​​the heat transfer space with the heat transfer gas may be advantageous in increasing the amount of heat transfer in the heat transfer space and rapidly controlling the heat transfer.

[0074] 9 shows the arrangement of internal support columns in the heat transfer space inside the heat transfer adjustment structure. Internal support columns 541 may be arranged inside the heat transfer space to prevent the collapse of the heat transfer space due to the load of a heat source or heat sink that may be arranged on the top of the heat transfer adjustment structure. The internal support columns abut the upper and lower plates and may have various shapes such as a cylinder or a polygonal column. The arrangement of the internal support columns may be in the form of concentric circles, straight lines, etc., and each column has a spacing of about 2 cm. 2 It is preferable to support an area of ​​at least 100 mm. The internal support pillars may be made of metal or dielectric materials. For example, the upper and lower plates may be made of metal, or Al. 2 O 3 The material may be a dielectric material such as

[0075] The heat transfer control structure may have parasitic heat transfer in addition to heat transfer transferred through the heat transfer gas in the heat transfer space. Parasitic heat transfer includes heat conducted by the structural characteristics of the heat transfer control structure, radiant heat generated between the upper plate and the lower plate, or radiant heat generated from the external environment. Through parasitic heat transfer, a fixed amount of heat transfer can be obtained, instead of a variable amount of heat transfer depending on the heat transfer gas pressure between the upper plate and the lower plate. Parasitic heat transfer may have a relatively small amount of heat transfer compared to the amount of heat transfer transferred by the heat transfer gas in the heat transfer space. The smaller the size and the fewer the number of internal support columns between the upper plate and the lower plate, the more the amount of parasitic heat transfer can be reduced. The longer and thinner the side walls connecting the upper plate and the lower plate, the more the amount of parasitic heat transfer can be reduced.

[0076] The heat transfer space of the heat transfer control structure can be supplied with a heat transfer gas having thermal conductivity through a heat transfer gas port. The heat transfer gas port may be arranged on the upper plate, lower plate, side wall, etc. of the heat transfer control structure. When the heat transfer gas port is arranged on the upper plate or lower plate, processing is required so that the heat transfer gas line passes through the heat source or heat sink in contact with the upper plate or lower plate. The heat transfer gas port may be made of metal, for example, aluminum stainless steel or other metals and alloys.

[0077] The heat transfer gas may be, for example, helium, nitrogen, argon, or the like, which is a gas having thermal conductivity. Helium is preferably used because it has the best thermal conductivity. When the heat transfer space interval is constant, an increase in the heat transfer gas pressure inside the heat transfer space can vary the amount of heat transfer between the upper plate and the lower plate. Conversely, the lower the heat transfer gas pressure inside the heat transfer space, the less the amount of heat transfer between the upper plate and the lower plate. When the interval between the heat transfer spaces is different, the amount of heat transfer in the heat transfer spaces can be different for each space.

[0078] 10 to 13 show the structure of a heat transfer adjusting structure having a multi-zone heat transfer space.

[0079] FIG. 10 shows a case where the heat transfer regulating structure has one heat transfer port and a case where the heat transfer regulating structure has two or more heat transfer ports.

[0080] 10, the multi-zone heat transfer control structure has two or more separated heat transfer spaces inside, and the heat transfer spaces supply and exhaust heat transfer gas using respective heat transfer gas ports 554 and 557, and the amount of heat transfer of the multi-zone heat transfer control structure can be adjusted by adjusting the heat transfer gas pressure in the heat transfer spaces. Supply gas ports 555 and 558 and exhaust gas ports 556 and 559 can also be connected to the multi-zones, respectively. For example, the change in heat transfer gas pressure in the central heat transfer space and the side heat transfer space of the multi-zone heat transfer control structure can be adjusted so that the amount of heat transfer in the center and the side of the heat source and the heat sink is different.

[0081] 11 shows an elliptical structure of the side wall connecting the upper plate and the lower plate of the heat transfer control structure. The upper plate and the lower plate are connected through the side wall, and a multi-zone heat transfer space can be formed inside.

[0082] FIG. 12 shows various structures of the heat transfer control structure, such as a spike structure, a fin structure, and an embossing structure in the heat transfer space inside the heat transfer control structure.

[0083] 13 shows the arrangement of internal support columns of the heat transfer space inside the heat transfer adjustment structure. The inside of the heat transfer space may be arranged with internal support columns to prevent the collapse of the heat transfer space due to the load of a heat source or heat sink that may be placed on top of the heat transfer adjustment structure.

[0084] The heat transfer control structure has a plurality of internal spaces defined by an upper plate, a lower plate, side walls, and a partition wall, and a heat transfer gas can flow in or out through gas ports connected to the upper plate, the lower plate, the side walls, or a combination thereof.

[0085] The heat transfer adjustment structure can be divided into a first internal space 521 and a second internal space 522 by a separation wall 525. The first internal space 521 and the second internal space 522 may be divided into an external source and an internal source. A first internal support pillar 561 may be provided in the first internal space 521, and a second internal support pillar 562 may be provided in the second internal space 522.

[0086] 14 to 16 are diagrams illustrating heat transfer gas control devices of substrate processing apparatuses according to embodiments of the present invention.

[0087] The heat transfer gas control system includes a gas supply and a gas exhaust.

[0088] The heat transfer gas supply and gas exhaust of the heat transfer regulating structure may be performed by one heat transfer gas port or two or more multiple ports.

[0089] When the heat transfer control structure has one heat transfer gas port, the gas supply pipe passes from the gas source through the gas control device and the gas supply valve, and then branches off to the gas exhaust device via the branch point 601, and the heat transfer gas in the heat transfer space can be supplied and exhausted through one heat transfer gas port.

[0090] When the heat transfer control structure has one gas port, the gas supply device 610 of the heat transfer control structure supplies the heat transfer gas to the heat transfer space, and the heat transfer gas supply device includes a gas supply pipe, a gas supply source 613, a gas control device 612, a gas supply valve 611, etc. The gas exhaust device 620 of the heat transfer control structure exhausts the heat transfer gas in the heat conduction space, and the exhaust device may be a device including a gas exhaust pipe, a pressure gauge 622, a pressure regulating valve 623, a vacuum pump 624, etc. The heat transfer gas exhaust device can play a role of exhausting the heat transfer gas when the pressure of the heat transfer control gas inside the heat transfer space is higher than a reference value.

[0091] When the heat transfer control structure has multiple gas ports, the gas supply line 631 and the gas exhaust line 641 can be separated from the heat transfer control structure, and the gas supply device and the gas exhaust device are separately connected through multiple ports such as a supply port and an exhaust port.

[0092] When the heat transfer control structure has multiple gas ports, the gas supply device of the heat transfer control structure supplies the heat transfer gas to the heat transfer space, and the gas supply device includes a gas supply pipe, a gas supply source 634, a gas control device 633, and a gas supply valve 632. The gas exhaust device of the heat transfer control structure exhausts the heat transfer gas in the heat transfer space, and the exhaust device may be a device including a gas exhaust pipe, a pressure gauge 642, a pressure regulating valve 643, a vacuum pump 644, etc. The heat transfer gas exhaust device can play a role of exhausting the heat transfer control gas when the pressure of the heat transfer control gas in the heat transfer space is higher than a reference value.

[0093] The heat transfer gas supply device and exhaust device can be applied to the central heat transfer space and the side heat transfer space respectively.

[0094] Referring to FIG. 15, a gas port 602 connected to the first internal space can be connected to a gas supply device 610 and a gas exhaust device 620, and a gas port 603 connected to the second internal space can be connected to a gas supply device 650 and a gas exhaust device 660.

[0095] Referring to FIG. 16, a gas supply device 630 may be connected to a gas supply port connected to the first internal space, a gas exhaust device 640 may be connected to the gas exhaust port, a gas supply device 670 may be connected to a gas supply port connected to the second internal space, and a gas exhaust device 660 may be connected to the gas exhaust port.

[0096] 17 and 18 are flow charts illustrating a temperature control method according to another embodiment of the present invention. The temperature control method can be performed by a heat transfer regulating structure.

[0097] 17, the temperature control method using the heat transfer controlling structure includes the steps of: installing the heat transfer controlling structure between a heat source and a heat sink (S10), supplying a heat transfer gas to a single internal space of the heat transfer controlling structure (S20), adjusting the pressure of the heat transfer gas (S30), and controlling the heat transfer time by varying the amount of heat transfer between the heat source and the heat sink according to the change in the pressure of the heat transfer gas (S40). With reference to the substrate processing apparatus, the heat source may correspond to the substrate holder, and the heat sink may correspond to the base structure.

[0098] 18, the multi-zone temperature control method using the heat transfer control structure includes the steps of: installing the heat transfer control structure between a heat source and a heat sink (S10), supplying a first heat transfer gas to a first inner space of the multi-zones of the heat transfer control structure (S21), supplying a second heat transfer gas to a second inner space of the multi-zones of the heat transfer control structure (S22), adjusting the pressure of the first heat transfer gas (S31), adjusting the pressure of the second heat transfer gas (S32), and varying the amount of heat transfer between the heat source and the heat sink according to changes in the pressure of the first heat transfer gas and changes in the pressure of the second heat transfer gas to control the heat transfer time. Referring to the substrate processing apparatus, the heat source may correspond to the substrate holder, and the heat sink may correspond to the base structure.

[0099] Although components included in the substrate processing apparatus are shown separately in FIG. 1, a plurality of components may be combined with each other and embodied in at least one module.

[0100] The substrate processing apparatus may be installed in a computing device having hardware elements in the form of software, hardware, or a combination thereof. The computing device may refer to various devices including, in whole or in part, a communication device such as a communication modem for communicating with various devices or wired / wireless communication networks, a memory for storing data for executing a program, and a microprocessor for executing a program to perform calculations and instructions.

[0101] The present embodiment is intended to explain the technical idea of ​​the present embodiment, and the scope of the technical idea of ​​the present embodiment is not limited by such an embodiment. The scope of protection of the present embodiment should be interpreted according to the appended claims, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the scope of rights of the present embodiment. [Explanation of symbols]

[0102] 10 Substrate processing device 100 Chamber 200 ···Substrate 300 ···Substrate holder 350 ···Substrate gas supply device 400 ···Electrostatic chuck 450 ···Chuck power supply device 500 Heat transfer control structure 600 Heat transfer gas control device 700 Base Structure 750 High frequency power supply 800 ···Channels 850 Refrigerant supply device 900 ···Heat Structure 950 ···Heat power supply device 1000...Temperature measuring device

Claims

1. A substrate processing apparatus, comprising: A chamber; a substrate holder disposed within the chamber and including an electrostatic chuck for fixing a substrate to the substrate by using electrostatic force; a base structure positioned within the chamber and having a channel formed therein; a heat transfer control structure positioned between the substrate holder and the base structure, the heat transfer control structure having a plurality of internal spaces; a substrate gas supply device connected to the substrate holder for supplying gas to a rear surface of the substrate; a chucking power supply device connected to the electrostatic chuck and supplying a chucking power to the electrostatic chuck; a heat transfer gas control device connected to the heat transfer regulating structure and supplying a heat transfer gas; a high frequency power supply connected to the base structure for supplying high frequency power; a coolant supply device connected to the channel for supplying a coolant; the heat transfer control structure has a plurality of internal spaces formed by an upper plate, a lower plate, a side wall, and a partition wall, and the heat transfer gas is introduced or discharged through a gas port connected to the upper plate, the lower plate, the side wall, or a combination thereof; a heat transfer control structure connected to the upper plate and measuring the upper plate temperature; A lower plate temperature is measured by connecting the lower plate of the heat transfer control structure to the lower plate; the substrate processing apparatus further comprising a temperature measuring device coupled to the base structure for measuring a temperature of the base structure.

2. the substrate holder includes a heat structure for adjusting a temperature of the substrate; The substrate processing apparatus according to claim 1 , further comprising a heat power supply device for supplying heat power to the heat structure.

3. The substrate processing apparatus of claim 1 , wherein the heat transfer control structure is divided into an internal source and an external source by the separation wall.

4. 2. The substrate processing apparatus of claim 1, wherein the difference in thermal expansion coefficient between the heat transfer control structure and the base structure is set to within ±50%.

5. 2. The substrate processing apparatus of claim 1, wherein the heat transfer gas control device is in data communication with the temperature measuring device and adjusts the difference between the upper plate temperature and the lower plate temperature to within a preset range.

6. The substrate processing apparatus of claim 1 , wherein the sidewall of the heat transfer control structure is formed in a curved shape.

7. The substrate processing apparatus of claim 1 , further comprising a plurality of support columns between the upper plate and the lower plate of the heat transfer adjustment structure.

8. The substrate processing apparatus of claim 1 , wherein the lower surface of the upper plate and the upper surface of the lower plate of the heat transfer control structure are formed with a spike structure.

9. The substrate processing apparatus of claim 1 , wherein the lower surface of the upper plate and the upper surface of the lower plate of the heat transfer control structure are formed with a fin structure.

10. The substrate processing apparatus of claim 1 , wherein the lower surface of the upper plate and the upper surface of the lower plate of the heat transfer control structure are formed with an embossed structure.

11. 2. The substrate processing apparatus of claim 1, wherein the heat transfer gas control device supplies or exhausts the heat transfer gas to the heat transfer control structure through a single gas port in a time-separated manner.

12. 2. The substrate processing apparatus of claim 1, wherein the heat transfer gas control device supplies or exhausts the heat transfer gas to the heat transfer control structure through a plurality of gas ports that are separated by a spatial separation manner.

13. 2 . The substrate processing apparatus of claim 1 , wherein the heat transfer gas control device controls a temperature change in a plurality of internal spaces of the heat transfer control structure by adjusting a pressure of the heat transfer gas.

14. The substrate processing apparatus of claim 13, wherein the heat transfer adjusting structure controls a heat transfer time by varying an amount of heat transfer between the upper plate and the lower plate in response to a change in pressure of the heat transfer gas.

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