Sputter trap with thin high purity coating layer and method of manufacturing same

Abstract

The sputtering chamber component includes a front surface, a back surface opposite the front surface, a sputter trap formed on at least a portion of the back surface, and a coating of metal particles formed on the sputter trap, the coating having a thickness of about 0.025 mm to about 2.54 mm (0.001 inch to about 0.1 inch), being substantially free of impurities, and the particles of the coating being substantially dispersed. [Selected Figure] Figure 6B

Description

[Technical field]

[0001] The present disclosure relates to a sputter trap or particle trap for use on a sputtering chamber component and a method for making the same. More specifically, the present disclosure relates to a roughened surface sputter trap having a thin coating layer thereon. [Background technology]

[0002] Physical vapor deposition ("PVD") processes are used to form thin films or layers of materials on a variety of substrates. PVD processes may be used, for example, in semiconductor manufacturing processes to form metallization layers in the manufacture of integrated circuit structures and devices. In one PVD process, known as sputtering, atoms are ejected from the surface of a sputtering target by bombardment with gas ions, such as a plasma. The sputtering target is thus the source of material to be deposited on the substrate.

[0003] A diagram of a portion of an exemplary sputter deposition apparatus 8 is shown in Figure 1. In one configuration, a sputtering target assembly 10 includes a backing plate 12 having a target 14 bonded thereto. A substrate 18, such as a semiconductor material wafer, is located within the sputter deposition apparatus 8 and spaced apart from the target 14. As shown, the target 14 is disposed above the substrate 18 and positioned such that the sputtering surface 16 faces the substrate 18.

[0004] During operation, sputtered material 22 detaches from surface 16 of target 14 and forms a thin film 20 on substrate 18. In some embodiments, suitable substrates 18 include wafers used in semiconductor manufacturing. For example, target 14 is bombarded with energy until atoms from surface 16 are ejected into the surrounding atmosphere and subsequently deposited on substrate 18. In some embodiments, plasma sputtering is used to deposit thin metal films on substrates such as wafers for use in electronics.

[0005] When particles are formed, problems may arise in the deposition process because these particles may fall into or onto the deposited film and destroy the desired properties of the thin film. A sputter trap or particle trap may be included on the sputtering target to capture particles formed during the deposition process. Additionally, trapped particles may break off from the sputtering target and destroy the thin film. For example, loosely held particles may break off from the sputter trap during cyclic thermal stress. Therefore, it is desirable to develop a sputter trap or particle trap that can be applied to a sputtering component, such as a sputtering target, that captures and holds particles formed during the deposition process. Such particle capture and retention reduces the probability of particles falling onto the deposited film during the deposition process. Summary of the Invention

[0006] In one example, a sputtering chamber component includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface. The sputter trap has a surface roughness greater than that of the back surface of the sputtering chamber component. The sputter trap also has a coating of metal particles formed on the sputter trap. The coating has a thickness of about 0.025 mm to about 2.54 mm (0.001 inch to about 0.1 inch) and is substantially free of impurities. The particles of the coating are substantially diffused.

[0007] In another example, a method of forming a sputter trap on a sputtering chamber component includes cold spraying metal particles onto at least a portion of a textured surface of the sputtering chamber component to form a layer having a thickness of about 0.025 mm to about 2.54 mm (0.001 inch to about 0.1 inch).

[0008] While multiple embodiments are disclosed, still other embodiments of the present invention will become apparent to those skilled in the art from the following detailed description, which shows and describes illustrative embodiments of the invention. Accordingly, the drawings and detailed description are to be regarded as illustrative in nature and not restrictive. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic diagram of a portion of a physical vapor deposition device according to some embodiments.

[0010] [Diagram 2] FIG. 1 is a schematic plan view of an exemplary sputtering target assembly, according to some embodiments.

[0011] [Diagram 3] FIG. 3 is a schematic cross-sectional view taken along line 3-3 of FIG. 2, in accordance with some embodiments.

[0012] [Figure 4] FIG. 4 is a schematic cross-sectional view of a sputter trap taken along line AA of FIG. 3, in accordance with some embodiments.

[0013] [Figure 5A] 1 is an image of a surface of an exemplary sputter trap without a coating layer, according to some embodiments.

[0014] [Figure 5B] 1 is an image of a surface of an exemplary sputter trap without a coating layer, according to some embodiments.

[0015] [Figure 6A] 1 is an image of a surface of a sputter trap having an exemplary coating layer, according to some embodiments.

[0016] [Figure 6B]1 is an image of a surface of a sputter trap having an exemplary coating layer, according to some embodiments.

[0017] [Figure 7A] 1 is a spectrographic image showing the concentration of various components on the surface of a sputter trap having an exemplary coating layer, according to some embodiments.

[0018] [Figure 7B] 1 is a spectrographic image showing the concentrations of various components on the surface of an exemplary sputter trap without a coating layer, according to some embodiments.

[0019] [Figure 7C] 1 is a spectrographic image showing the concentrations of various components on the surface of an exemplary sputter trap without a coating layer, according to some embodiments.

[0020] Various modifications and additions can be made to the exemplary embodiments discussed without departing from the scope of the present invention. For example, while the embodiments described above refer to particular features, the scope of these inventions also includes embodiments having various combinations of features and embodiments that do not include all of the features described above. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] A sputtering chamber component for use in a sputtering chamber having a sputter trap and a thin coating layer thereon is disclosed herein. A method of forming the component is also disclosed herein.

[0022] Sputter traps are important during physical vapor deposition (PVD) processes to prevent redeposition of contaminating particles onto the substrate in the physical vapor deposition equipment. During the sputtering process, sputtered particles are ejected into the gas phase and may deposit on any surface within the sputtering chamber. Over time, these deposits can build up and become dislodged or sloughed off during the sputtering process, forming particles that can redeposit on the substrate and cause contamination of the substrate. Sputter traps prevent sputtered particles from redepositing onto the substrate during the sputtering process.

[0023] In some cases, sputtering chamber components may be modified to function as re-deposition sites and / or sputter traps for sputtered materials. For example, the re-deposition sites or sputter traps for materials may include specifically patterned surfaces that reduce particle sloughing by increasing surface area while eliminating flat and angled surfaces. Thus, in some cases, the sputter traps may include surfaces with indentations or depressions formed therein. The indentations or depressions may be formed in a patterned arrangement and may form a macro-texture. A macro-texture is defined as a number of features arranged on the surface of the sputter trap. In some cases, the sputter traps may also include a micro-texture formed on the macro-texture. A micro-texture is defined as a texture, pattern, or any other such number of features that are applied to the surface contours of the macro-texture (e.g., the features of the macro-texture). This micro-textured surface may further enhance the adhesion of sputtered materials onto the sputter trap, as described above.

[0024] In some cases, additional layers of material may be added to the surface of the sputter trap to further improve adhesion. However, it is important that the surface macro-texture and / or micro-texture is preserved to maintain the functionality of the texture after these layers are added to the surface of the sputter trap. It has been found that applying a thin high purity metal coating layer onto the surface of the sputter trap can improve surface cleanliness by reducing undesirable impurities, thus improving adhesion of the sputtered material onto the sputter trap while preserving the desired surface texture of the sputter trap.

[0025] Suitable sputtering chamber components include sputtering targets, coils, and other components positioned within the sputtering chamber upon which particles may accumulate.

[0026] According to some embodiments, Figure 2 is a plan view of sputtering target assembly 30, and Figure 3 is a cross-sectional view of sputtering target assembly 30 taken along line 3-3 of Figure 2. Sputtering target assembly 30 includes sputtering target 31 and backing plate 34. In some embodiments, sputtering target 31 and backing plate 34 have a circular or substantially circular cross-sectional shape in plan view. In use, backing plate 34 is connected to a sputter deposition apparatus by, for example, bolts or clamps.

[0027] The sputtering target 31 has a sputtering surface or front surface 32, a back surface 29 opposite the front surface 32, and a sidewall 35 extending between the front surface 32 and the back surface 29 around the periphery of the sputtering target 31. In some embodiments, the front surface 32 may be generally flat or planar. For example, the front surface 32 may be parallel to a horizontal first plane. In other embodiments, the front surface 32 may have one or more convex or concave portions or features. Additionally or alternatively, the back surface 29 of the sputtering target 31 may be substantially planar. Alternatively, the back surface 29 may have a protrusion or indentation. For example, the back surface 29 may receive or be received within a portion of a backing plate 34, a design known as a recessed backing plate.

[0028] The sputtering target 31 may be formed from any metal suitable for PVD processes. For example, the sputtering target 31 may include aluminum (Al), vanadium (V), niobium (Nb), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), ruthenium (Ru), germanium (Ge), selenium (Se), zirconium (Zr), molybdenum (Mo), hafnium (Hf), and alloys thereof, such as Al alloys, V alloys, Nb alloys, Cu alloys, Ti alloys, Ta alloys, W alloys, Ru alloys, Ge alloys, Se alloys, Zr alloys, Mo alloys, and Hf alloys. Suitable alloys include, but are not limited to, copper-manganese (CuMn) alloys, aluminum-copper (AlCu) alloys, titanium-tungsten (TiW) alloys, tantalum-aluminum (TaAl) alloys, and ruthenium (Ru) alloys.

[0029] The backing plate 34 has a front surface 37, a back surface 39 opposite the front surface 37, and a sidewall 41 extending from the front surface 37 to the back surface 39 around the periphery of the backing plate 34. The back surface 29 of the sputtering target 31 is adjacent to and bonded to the front surface 37 of the backing plate 34. The radius of the backing plate 34 is greater than the radius of the sputtering target 31 such that at least a portion of the backing plate 34, referred to as the flange 44, extends radially outward from the outer diameter or radial edge of the sputtering target 31. For example, the backing plate 34 and the sputtering target 31 may be part of an integral or monolithic sputtering target assembly 30. In other embodiments, the backing plate 34 and the sputtering target 31 may be separate pieces bonded together. In such embodiments, the backing plate 34 may be formed of the same or different material as the sputtering target 31.

[0030] The flange 44 extending radially outward from the sputtering target 31 may be substantially flat or planar. In some embodiments, the exposed portion of the front surface 37 may be parallel or substantially parallel to a horizontal plane. In other embodiments, the exposed portion of the front surface 37 may lie in a plane oblique to the first plane. The flange 44 may include one or more counterbored and / or through holes 45 for connecting or bolting the backing plate 34 to a sputter deposition source or apparatus.

[0031] The backing plate 34 may be formed from any suitable metal. For example, the backing plate 34 may include aluminum (Al), vanadium (V), niobium (Nb), copper (Cu), titanium (Ti), tantalum (Ta), molybdenum (Mo), and alloys and combinations thereof. For example, alloys include Al alloys (such as 6061 or 2024), V alloys, Nb alloys, Cu alloys (such as CuZn, CuCr, C18000), Ti alloys, Ta alloys, and Mo alloys. In some embodiments, the backing plate 34 and the sputtering target 31 may be formed from the same material. In other embodiments, the backing plate 34 and the sputtering target 31 may be formed from different materials.

[0032] The backing plate 34 also includes a sputter trap 46 formed on the front surface 37 of the flange 44. In some embodiments, the sputter trap 46 may extend from where the sidewall of the sputtering target 31 meets the front surface 37 of the backing plate 34. For example, the sputter trap 46 may extend radially around the periphery of the sputtering target 31. In some embodiments, the backside of the target 31 may have an outer radius r1 and the sputter trap 46 may have an inner radius r1 and an outer radius r2. For example, the sputter trap 46 may be formed directly adjacent where the target 31 couples to the backing plate 34. Additionally or alternatively, the sputter trap 46 may be formed on the sidewall 35 of the sputtering target 31.

[0033] As mentioned above, particle formation during the sputtering process is a concern because particles, when deposited on a substrate, can affect the uniformity of the film formed. Even if the particles are confined or trapped within the sputter trap, there is a possibility that the particles may break off during the sputtering process. Thus, the sputter trap may include a textured surface to improve the adhesion of stray particles. For example, in some embodiments, the sputter trap 46 may include dents, depressions, holes, and / or any other combination of macro-texture 48 and / or micro-texture 50, as desired. In some embodiments, the sputter trap 46 may have a surface roughness that is greater than the surface roughness of the back surface 29 of the sputtering chamber component.

[0034] FIG. 4 is a cross-sectional view of sputter trap 46. In some embodiments, sputter trap 46 includes a layer 52 formed thereon. Layer 52 may completely or entirely cover the outer surface of sputter trap 46. In this manner, layer 52 masks or covers various impurities in the textured surface that contribute to reducing adhesion of sputtered material or contaminant particles to sputter trap 46. In some embodiments, layer 52 may be formed, for example, by spraying and depositing metal particles onto the surface of sputter trap 46. In some embodiments, metal particles suitable for forming layer 52 may include one or more of titanium, tantalum, aluminum, or various alloys, and combinations thereof. The particles of layer 52 are selected to adhere to the outer surface of the sputter trap and to which particles in the sputter chamber adhere. In some embodiments, layer 52 may be the same material as the sputter trap. In other embodiments, layer 52 may be a different material than the material of the sputter trap.

[0035] In some embodiments, metal particles may be deposited on the sputter trap 46 via a cold spray process in which metal particles are accelerated at high velocities and collide with the surface of the sputter trap 46. During the collision, the particles undergo plastic deformation and are deposited on the surface. In some embodiments, the particles may be formed from powder sources such as various metal powders. In some embodiments, the particles may have a particular particle size distribution. For example, the particles may have an average particle size of about 200 mesh (0.074 mm) to about 320 mesh (0.04 mm). Various particle sizes may be used to obtain a sputter trap 46 with a particular surface roughness, as desired. In some examples, more than one particle size may be used to obtain a sputter trap 46 with, for example, a bimodal particle size distribution.

[0036] In some embodiments, the particles in layer 52 can be substantially diffused upon deposition on the surface of sputter trap 46, thereby providing layer 52 with a uniform particle distribution such that individual particles are substantially indistinguishable from one another.

[0037] In some embodiments, layer 52 is substantially thin such that the surface texture of sputter trap 46 is preserved after formation of layer 52. For example, layer 52 may have a thickness of about 0.001 inch to about 0.1 inch, about 0.001 inch to about 0.01 inch, about 0.001 inch to about 0.005 inch, or about 0.001 inch to about 0.003 inch. The thickness of layer 52 may vary depending on the size, texture, and / or pattern of the textured surface. For example, a textured surface with larger features or greater surface roughness may accommodate a thicker layer, while a textured surface with smaller features or less surface roughness may require a thinner layer. For example, a thicker layer may mask the macro-texture 48 and / or micro-texture 50 of a particular textured surface, thereby reducing adhesion of sputtered material onto the surface of the sputter trap 46. Thus, in some cases, a thinner layer may preserve the texture and improve adhesion.

[0038] In some embodiments, layer 52 is substantially free of impurities. For example, layer 52 may be at least about 99.99% pure, between 99.99% and about 99.995% pure, or at least about 99.995% pure. Impurities may include various undesirable components, such as carbon, carbides, metal carbides, and metal oxides, such as aluminum oxide. In some cases, impurities such as these may reduce the adhesion of sputtered material onto the surfaces of the sputter trap. Thus, a sputter trap with fewer impurities may improve adhesion.

[0039] In some embodiments, layer 52 is substantially free of impurities at a surface of layer 52 (e.g., areas of layer 52 that are exposed). For example, the concentration of impurities (e.g., metal carbides, aluminum oxide, and / or other impurities) at the surface of layer 52 is about 70% to about 100%, about 80% to about 99%, or about 90% to about 95% lower than the concentration of impurities at the front face of the sputter trap before the layer is applied. For example, the concentration of metal carbides at the surface of layer 52 can be less than 70% of the concentration of metal carbides at the front face of the sputter trap before the layer is applied.

[0040] In some embodiments, a method of forming a coating layer 52 on a sputtering chamber component can include cold spraying particles onto at least a portion of the sputtering chamber component. As described above, the sputtering chamber component can be, for example, a sputter trap. In some embodiments, the sputter trap can have a textured surface. For example, the surface of the sputter trap can include dimples, depressions, holes, and / or any other combination of macrotexture 48 and / or microtexture 50, as desired, or the sputter trap can have a surface roughness that is greater than the surface roughness of the back surface of the sputtering chamber component, as disclosed herein.

[0041] During cold spraying, a solid powder of metal particles is accelerated towards a sputtering chamber component. In some embodiments, various impact velocities are selected such that upon impact, the particles plastically deform and adhere to the surface of the sputtering chamber component. Suitable impact velocities for cold spraying may depend on various factors, including the size and / or composition of the particles being sprayed, and will be known to those skilled in the art. In some embodiments, impact velocities are suitable such that the particles form a substantially diffused layer. As described herein, a substantially diffused layer is defined as a layer having a uniform distribution of particles such that individual particles are substantially indistinguishable or indistinguishable from one another. In some embodiments, both the specific impact velocity and particle size may be selected such that the particles form a substantially diffused layer.

[0042] After cold spraying, a layer of metal particles 52 is formed on the surface of the sputter trap. In some embodiments, layer 52 may be substantially thin and / or substantially free of impurities, as described above.

[0043] In some embodiments, the method may also include forming a textured surface on at least a portion of the sputtering chamber component prior to cold spraying. In various examples, the textured surface may be formed by various methods including bead blasting, knurling, machining, and / or any other suitable texturing technique. For example, when using bead blasting, abrasive particles may be sprayed onto the surface of the sputter trap 46 and impacted against the surface to create the texture. Similarly, a knurling process presses a pattern into the surface of the sputter trap 46 to create the texture, while a machining process cuts a pattern into the surface of the sputter trap 46. Although the above exemplary methods are disclosed herein, the surface texture may be formed by any suitable method known to one of skill in the art. EXAMPLES

[0044] Example 1: Control sample grit blasted with silicon carbide

[0045] A sputtering chamber component in the form of a titanium sputter trap was subjected to grit blasting with silicon carbide to form a textured surface. No layer was formed thereon. Figure 5A is a secondary electron (SE) image of the surface of the control sample, and Figure 5B is a backscattered electron (BSE) image of the surface of the control sample. As shown in Figure 5B, large areas of silicon carbide impurities are visible.

[0046] Example 2: Cold-sprayed sample with a thin high-purity coating layer

[0047] An exemplary coating layer was formed on the surface of a sputtering chamber component in the form of a titanium sputter trap. The surface of the sputter trap was first grit blasted with silicon carbide to form a textured surface. A coating layer was then formed on the textured surface by cold spraying titanium (Ti) particles in the form of a metal powder. The titanium particles were about 320 mesh and had a purity of 4N5 (99.995%). The average thickness of the resulting coating layer was about 0.0508 mm to about 0.0862 mm.

[0048] FIG. 6A is an SE image of the surface of the sputter trap, including the coating layer. As shown, the layer is homogenous and uniform, with a dense distribution of particles. The layer also exhibits fewer impurities than the control sample. Thus, the surface of the sputter trap exhibited fewer impurities compared to the surface of the control sample (e.g., before the formation of the coating layer).

[0049] FIG. 6B is a BSE image of the surface of the sputter trap including the coating layer. As shown, the layer is homogenous and uniform with a dense distribution of particles. Thus, the layer is substantially thinner such that the textured surface on the outer surface of the sputter trap is preserved. The surface of the sputter trap with the coating layer also had less impurities than the control sample.

[0050] Example 3: Comparison of surface impurities in cold sprayed samples versus control samples

[0051] An exemplary coating layer was formed on the surface of a sputtering chamber component in the form of a titanium sputter trap. First, the surface of the sputter trap was grit blasted with silicon carbide to form a textured surface. A coating layer was then formed on the textured surface by cold spraying titanium (Ti) particles in the form of a metal powder. The titanium particles were about 320 mesh and had a purity of 4N5 (99.995%). The average thickness of the resulting coating layer was about 0.0508 mm to about 0.0762 mm. Spectrograph results for the sputter trap with the exemplary coating layer (Sample 1) and two control samples (Samples 2 and 3) are shown in Table 1. Sample 2 was grit blasted with silicon carbide and did not include a coating layer. Sample 3 was grit blasted with aluminum oxide and did not include a coating layer. As shown, Sample 1 with the exemplary coating layer had a lower concentration of carbon and total metals compared to the sputter trap without the exemplary coating layer. [Table 1] Table 1.

[0052] Figure 7A shows a spectrograph image showing the concentration of various components on the surface of a sputter trap having an exemplary cold sprayed coating layer. As shown, there are no visible metal carbide spectra in Figure 7A. Thus, the surface of the cold sprayed coating layer was substantially free of undesirable impurities, i.e., metal carbides.

[0053] FIG. 7B shows a spectrograph image showing the concentration of various components on the surface of an exemplary sputter trap without a coating layer. The sputter trap was grit blasted with silicon carbide to create a textured surface. FIG. 7B shows the presence of some metal carbides on the grit blasted surface.

[0054] FIG. 7C shows a spectrograph image showing the concentration of various components on the surface of an exemplary sputter trap without a coating layer. The sputter trap was grit blasted with aluminum oxide to create a textured surface. FIG. 7C shows that there are some metal carbides and metal oxides on the grit blasted surface.

[0055] Various modifications and additions can be made to the exemplary embodiments discussed without departing from the scope of the present invention. For example, although the embodiments described above refer to particular features, the scope of this invention also includes embodiments having different combinations of features and embodiments that do not include all of the features described above. This specification includes the disclosure of the following inventions. [1] A sputtering chamber component comprising: The front and A back surface opposite to the front surface; a sputter trap formed on at least a portion of said front surface, the sputter trap having a surface roughness greater than that of said back surface of said sputter chamber component; and a coating of metal particles formed on said sputter trap, the coating having a thickness of about 0.025 mm to about 2.54 mm (0.001 inch to about 0.1 inch) and being substantially free of impurities, the particles of said coating being substantially diffused. [2] 2. The sputtering chamber component of claim 1, wherein a concentration of metal carbides at a surface of the coating is between about 70% and 100% of a concentration of metal carbides at the front surface of the sputter trap before the coating is applied. [3] 2. The sputtering chamber component of claim 1, wherein the surface of the coating is substantially free of metal carbides. [4] 2. The sputtering chamber component of claim 1, wherein the particles comprise a material selected from the group consisting of titanium, tantalum, tantalum alloys, aluminum, aluminum alloys, and combinations thereof. [5] 1. A method of forming a sputter trap on a sputtering chamber component, comprising: cold spraying metal particles onto at least a portion of the textured surface of the sputtering chamber component to form a layer having a thickness of about 0.025 mm to about 2.54 mm (0.001 inch to about 0.1 inch). [6] 6. The method of claim 5, further comprising forming the textured surface on at least a portion of the sputtering chamber component by bead blasting, knurling, or machining. [7] 6. The method of claim 5, wherein a concentration of metal carbides at the surface of the layer is less than 70% of a concentration of metal carbides at the at least a portion of the textured surface of the sputtering chamber component before the layer is applied. [8] 9. The method of claim 5, wherein the particles of the layer are substantially dispersed. [9] The method according to [5], wherein the purity of the layer is about 99.99% to about 99.995%.

[10] The method of claim 5, wherein the particles comprise a material selected from the group consisting of titanium, tantalum, tantalum alloys, aluminum, aluminum alloys, and combinations thereof.

Claims

1. A sputtering chamber component comprising: The front and A back surface opposite to the front surface; a sputter trap formed on at least a portion of said front surface, the sputter trap having a surface roughness including a microtexture and greater than said back surface of the sputtering chamber component; and a coating of titanium formed on said sputter trap, the titanium coating having a thickness of about 0.025 mm to about 0.127 mm and being substantially free of impurities, the particles of the titanium coating being cold sprayed onto the surface of the sputter trap such that they substantially diffuse and plastically deform, wherein the particle size of the titanium coating before being cold sprayed is between 200 mesh (0.074 mm) and 320 mesh (0.04 mm).

2. 10. The sputtering chamber component of claim 1, wherein a concentration of metal carbides at a surface of the titanium coating is about 70% to 100% lower than a concentration of metal carbides at the front surface of the sputter trap before the titanium coating is applied.

3. The sputtering chamber component of claim 1 , wherein the surface of the titanium coating is substantially free of metal carbides.

4. 1. A method of forming a sputter trap on a sputtering chamber component, comprising:

16. The method of claim 15, further comprising: cold spraying particles of titanium onto at least a portion of a textured surface of a sputtering chamber component, the textured surface including a microtexture, such that the particles of titanium plastically deform and adhere to at least a portion of the textured surface to form a substantially diffused layer having a thickness of about 0.025 mm to about 0.127 mm and having a purity of at least 99.99%, wherein the particles of the titanium coating prior to being cold sprayed have a particle size of 200 mesh (0.074 mm) to 320 mesh (0.04 mm).

5. The method of claim 4, further comprising forming the textured surface on at least a portion of the sputtering chamber component by grit blasting, bead blasting, knurling, or machining.

6. 5. The method of claim 4, wherein a concentration of metal carbides at the surface of the layer is less than 70% of a concentration of metal carbides at the at least a portion of the textured surface of the sputtering chamber component before the layer is applied.

7. The method of claim 4, wherein the layer has a purity of about 99.99% to about 99.995%.

8. The method of claim 4 further comprising forming a macrotexture on the sputtering chamber component prior to cold spraying.

9. The method of claim 4 , wherein the layer has a purity of at least 99.995%.

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