Method and apparatus for deposition of multilayer devices with superconducting films - Patents.com

Abstract

The physical vapor deposition system includes a chamber, three target supports for the targets, a movable shield positioned with openings therethrough, a workpiece support for holding the workpiece within the chamber, a gas supply for delivering nitrogen gas and an inert gas to the chamber, a power supply, and a controller configured to move the shield to position the openings adjacent each target in sequence, and to cause the power supply to apply sufficient power to ignite a plasma in the chamber at each target to deposit a buffer layer, a device layer of a first material that is a metal nitride layer suitable for use as a superconductor at temperatures above 8° K, and a capping layer, respectively.

Description

[Technical field]

[0001] SUMMARY The present disclosure relates to a reactor for processing a workpiece for depositing metal nitrides, particularly metal nitrides suitable as superconducting materials. [Background technology]

[0002] In relation to superconductivity, the critical temperature (T C ) refers to the temperature below which a material becomes superconducting. Niobium nitride (NbN) is a material that can be used in superconducting applications, e.g., superconducting nanowire single photon detectors (SNSPDs) for use in defect analysis in quantum information processing, CMOS, LIDAR, etc. The critical temperature of niobium nitride depends on the crystal structure and atomic ratios of the material. For example, referring to Figure 1, cubic δ-phase NbN has several advantages due to its relatively "high" critical temperature, e.g., 9.7-16.5°K.

[0003] Niobium nitride may be deposited on a workpiece by physical vapor deposition (PVD). For example, a sputtering operation may be performed using a niobium target in the presence of nitrogen gas. Sputtering may be performed by inducing a plasma in a reactor chamber containing the target and the workpiece. Summary of the Invention

[0004] In one aspect, a method of forming a structure including a metal nitride layer on a workpiece includes preconditioning the chamber by flowing nitrogen gas and an inert gas into the chamber at a first flow ratio and igniting a plasma in the chamber prior to placing the workpiece in the chamber including a metal target, evacuating the chamber after preconditioning, placing the workpiece on a workpiece support in the chamber after preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and an inert gas into the chamber at a second flow ratio and igniting a plasma in the chamber, the second flow ratio being less than the first flow ratio.

[0005] In another aspect, a physical vapor deposition system includes chamber walls forming a chamber, a support for holding a workpiece within the chamber, a vacuum pump for evacuating the chamber, a gas supply for delivering nitrogen gas and an inert gas to the chamber, an electrode for supporting a metal target, a power supply for applying power to the electrode, and a controller. The controller is configured such that before a workpiece on which a metal nitride layer is to be deposited is placed in the chamber, the gas source flows the nitrogen gas and the inert gas into the chamber at a first flow ratio and the power supply applies sufficient power to ignite a plasma in the chamber to precondition the chamber, and after the workpiece is placed in the chamber, the gas source flows the nitrogen gas and the inert gas into the chamber at a second flow ratio and the power supply applies sufficient power to ignite a plasma in the chamber to deposit a metal nitride layer on the workpiece by physical vapor deposition. The second flow ratio is less than the first flow ratio.

[0006] In another aspect, a cluster tool for fabrication of devices having a metal nitride layer includes a load lock chamber for receiving a cassette holding a workpiece, a central vacuum chamber, a plurality of deposition chambers arranged in a cluster configuration around and coupled to the central vacuum chamber, a robot for transporting the workpiece between the vacuum chamber, the load lock chamber, and the plurality of deposition chambers, and a controller. The plurality of deposition chambers include a first deposition chamber having a first target, a second deposition chamber having a second target, and a third deposition chamber having a third target. The controller is configured for the robot to transport a substrate to the first deposition chamber, where the first deposition chamber deposits a buffer layer on the workpiece, for the robot to transport the substrate from the first deposition chamber to the second deposition chamber, where the second deposition chamber deposits a metal nitride layer suitable for use as a superconductor at a temperature above 8° K on the buffer layer, and for the robot to transport the substrate from the second deposition chamber to the third deposition chamber, where the third deposition chamber deposits a capping layer on the metal nitride layer.

[0007] In another aspect, a physical vapor deposition system includes chamber walls forming a chamber, a first target support for holding a first target, a second target support for holding a second target, a third target support for holding a third target, a moveable shield positioned within the chamber and having an opening therethrough, an actuator for moving the shield, a vacuum pump for evacuating the chamber, a gas supply for delivering nitrogen gas and an inert gas to the chamber, a power supply for selectively applying power to the first target, the second target, or the third target, and a controller. The controller is configured to cause the actuator to move the shield to position the opening adjacent to the first target, and the gas source to flow a first gas into the chamber, and the power source to apply sufficient power to ignite a plasma in the chamber to deposit a buffer layer of a first material on the workpiece on the workpiece support, and to cause the actuator to move the shield to position the opening adjacent to the second target, and the gas source to flow a second gas into the chamber, and the power source to apply sufficient power to ignite a plasma in the chamber to deposit a buffer layer of a first material on the workpiece on the workpiece support. the actuator is configured to move the shield to position the opening adjacent to the third target, the gas source to flow a third gas into the chamber, and the power supply is configured to apply sufficient power to ignite a plasma in the chamber to deposit a capping layer of a third material (the third material being of a different composition than the first and second materials) on the device layer.

[0008] These aspects may include one or more of the following features.

[0009] The metal target may include niobium or a niobium alloy. The metal nitride layer may include niobium nitride or a niobium alloy nitride. The metal target may be substantially pure niobium and the metal nitride layer may be substantially pure niobium nitride. The metal nitride layer may be δ-phase NbN. The plasma may sputter the metal of the metal target.

[0010] The second flow ratio may be 2-30% lower than the first flow ratio. The first flow ratio may be 4:100 to 1:1, and the second flow ratio may be 3:100 to 48:52. -8 It can be evacuated to pressures below Torr.

[0011] The preconditioning includes placing a shutter disk on the substrate support. The robot is configured to position the shutter disk in the chamber for preconditioning the chamber. The preconditioning may include heating the shutter disk to a temperature, and the physical vapor deposition performance may include heating the workpiece to the same temperature. The temperature may be 200-500° C. Ignition of the plasma in the preconditioning and in the deposition may use the same power levels.

[0012] The nitrogen ion concentration in the plasma can be measured using an optical sensor. The flow rate of the nitrogen gas and / or the inert gas can be adjusted in response to the nitrogen ion concentration measured by the sensor to produce a desired nitrogen ion concentration. The sensor is positioned outside the chamber, where the chamber wall includes a window to provide the sensor with optical access to the chamber.

[0013] A sputter shield may be positioned within the chamber, and may have an opening to provide the sensor with a clear line of sight to the plasma.

[0014] The buffer layer may be formed on the workpiece prior to formation of the metal nitride layer. The metal nitride layer may be deposited directly on the buffer layer. The buffer layer may be a metal nitride of a metal different from the metal of the target. The buffer layer may be aluminum nitride.

[0015] A capping layer may be formed on the metal nitride layer. The capping layer may include carbon, silicon, a metal different from the metal of the target, or a nitride of a material different from the metal of the target. The capping layer may be carbon, silicon nitride, or titanium nitride.

[0016] The first target may be a metal other than the metal of the second target. The first gas may include nitrogen gas. The second target may include niobium. The second gas may include nitrogen gas. The third target may include carbon, silicon, or a metal other than the metal of the second target.

[0017] The shield may be rotatable and the actuator may be configured to rotate the shield.

[0018] Some implementations may include one or more of the following advantages: The process allows for reliable or stable deposition of high quality NbN with high critical temperature. This allows for the fabrication of devices, such as SNSPDs, that operate at higher temperatures, making such devices more practical. The devices can be fabricated with higher quantum efficiency and lower dark current. The devices can also be fabricated with reduced timing jitter and fast detection response. The buffer layer, superconducting film, and capping layer can be deposited by a single tool without removing the workpiece from the vacuum. This can significantly improve process stability and manufacturability, reduce the risk of contamination, e.g., oxidation, and also help preserve the high critical temperature.

[0019] The details of one or more implementations are set forth in the accompanying drawings and the description below. Other potential features, aspects, and advantages will become apparent from the specification, drawings, and claims. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 illustrates niobium nitride phases as a function of processing temperature and nitrogen atomic percentage. [Diagram 2] 1 is a schematic cross-sectional view of a reactor for depositing metal nitrides. [Diagram 3] 1 is a graph showing voltage on the target as a function of nitrogen flow and critical temperature measured for various nitrogen flow values. [Figure 4] FIG. 1 is a flow diagram of a process for depositing metal nitrides. [Diagram 5] 1 is a schematic cross-sectional view of a device including a metal nitride phase for use as a superconducting material during operation. [Figure 6] FIG. 2 is a schematic cross-sectional side view of a reactor for depositing a seed layer, a metal nitride, and a capping layer. [Figure 7] FIG. 2 is a schematic top view of a cluster tool for depositing a seed layer, a metal nitride, and a capping layer. [Figure 8] FIG. 1 is a schematic side view of a processing chamber for depositing multiple layers of different compositions. [Figure 9] FIG. 9 is a schematic top view of the processing chamber of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Like reference numbers and designations in the various drawings indicate like elements.

[0022] As described above, niobium nitride, and in particular the δ-phase NbN, has several advantages as a superconducting material. However, δ-phase NbN can be difficult to deposit in satisfactory quality. For example, this phase can be difficult to deposit in high vacuum (10 -9 Torr or less) and highly mobile species (high temperature, high peak power, and low duty cycle in pulsed DC). Semiconductor grade deposition tools can provide good uniformity, but they are typically-8 It is configured for a minimum vacuum of 100 Torr, however, vacuum performance can be improved by increasing the pumping capacity and trapping additional gases with low atomic mass, such as water vapor.

[0023] Another point is that a buffer layer, such as an aluminum nitride (AlN) layer, under the (super)conducting layer can help increase the critical temperature of the metal nitride layer. Similarly, a capping layer, such as a carbon layer or a silicon nitride layer, on the (super)conducting layer can help protect the metal nitride layer, such as preventing oxidation. The capping and buffer layers are typically provided by separate deposition tools. Unfortunately, removing the workpiece from the tool used to deposit the metal nitride can result in contamination or oxidation, thereby lowering the critical temperature. However, a cluster tool can be configured to have multiple chambers, each of which can deposit a layer without removing the workpiece from the vacuum environment. Or, a single chamber can be configured to deposit each of the layers, thereby avoiding the need to remove the workpiece.

[0024] Yet another point is that even under good deposition conditions, it can be difficult to reliably deposit a film with the highest possible critical temperature. However, it has been discovered that the critical temperature of niobium nitride exhibits a hysteresis effect depending on the nitrogen content, resulting in different critical temperatures depending on whether the nitrogen content is gradually increased or decreased. By performing a preconditioning of the chamber using nitrogen gas before depositing a layer on the workpiece, the process can follow a more favorable curve of this hysteresis effect. As a result, a high critical temperature can be more reliably obtained.

[0025] Deposition System 2, a physical vapor deposition (PVD) reactor 100 includes a vacuum chamber 110. The chamber 110 is surrounded by chamber walls, including sidewalls 112, a floor 114, and a ceiling 116. A workpiece support 120, such as a pedestal or susceptor, may be positioned within the chamber 110. The workpiece support 120 has an upper surface 120a that supports a workpiece 10 within the chamber 110. The support 120 is elevated above the floor 114.

[0026] In some implementations, a temperature control system can control the temperature of the support 120. For example, the temperature control system can include a resistive heater embedded or disposed on the surface 120a of the workpiece support 120 and a power source electrically coupled to the heater. Alternatively or additionally, coolant channels can be formed in the workpiece support 120 and coolant from a coolant supply can flow through the channels by a pump.

[0027] In some implementations, the vertical position of the workpiece support 120 is adjustable, for example, by a vertical actuator.

[0028] An opening 118 (e.g., a slit valve) can be formed in a wall of the chamber 110. An end effector (not shown) can extend through the opening 118 to lower the substrate onto the support surface 120a of the workpiece support 120 to place the substrate 10 on lift pins (not shown).

[0029] In some implementations, the support 120, or a conductive electrode 121 therein (see FIG. 8), is grounded. Alternatively, an external power source 136 (see FIG. 8), such as a DC or RF power source, can be used to apply a bias voltage or RF power to the support 120 or a conductive electrode 121 therein, and thus to the workpiece 10. In some cases, the power source 136 can be coupled to the electrode 121 by an RF matching network 137 (see FIG. 8).

[0030] A sputter shield 126 may be positioned inside the chamber 110 to prevent sputtering of material onto the chamber sidewalls 112 .

[0031] The electrode 130 forms part of the ceiling 116, and the target 140 may be supported from the electrode 130. The electrode 130 is electrically coupled to a power source 132. The power source 132 may be configured to apply a pulsed DC voltage. The power source 132 may be coupled to the electrode 10 by an RF matching network 133. The applied power may be from 500 W to 20 kW, the voltage may be from 200 V to 600 V, the frequency may be from 50 kHz to 250 kHz, and the duty cycle may be 60-100%.

[0032] The target 140 is a body, e.g., a disk, formed of a metal onto which a metal nitride is to be deposited. As installed, the target may be a body of substantially pure metal, e.g., substantially pure niobium. However, during processing, nitrogen may react with the surface of the target to form a surface layer of metal nitride.

[0033] A vacuum pump 150 is connected to the chamber 110, for example, by a passageway having an opening in an area below the workpiece support 120 (e.g., in the floor 112), for evacuating the chamber 110. Examples of vacuum pumps include exhaust pumps with throttle or isolation valves, cryogenic pumps, and turbo pumps backed up by mechanical pumps. Although FIG. 2 shows a single vacuum pump, in some implementations multiple pumps may be used to increase the vacuum level. An assembly of one or more vacuum pumps 150 can evacuate the chamber to a pressure of 8×10 -9 The vacuum pump 150 can be capable of maintaining a ramp rate of less than 50 nTorr / min at elevated deposition temperatures.

[0034] Condensation plate 152 may be located in the passageway connecting chamber 110 to vacuum pump 150. Condensation plate 152 provides or is positioned within a surface of the passageway that is cool enough for water to condense on plate 152. Condensation plate 152 thus acts to capture / trap water vapor and other small molecules that may condense, thus preventing such gases from forming part of the plasma and reducing impurities in the metal nitride film.

[0035] A gas source 160 is fluidly connected to the chamber 110. The gas source 160 includes a source 162 of nitrogen gas (N2) and a source 164 of an inert gas, such as argon or helium gas. The flow rates of the nitrogen gas and the inert gas, and therefore the ratio of the flow rates, may be controlled by independently controllable valves 166 and mass flow controllers. Although FIG. 2 shows separate passages entering the chamber, the gases may be mixed before entering the chamber 110, and more complex gas distributor devices, such as a gas distribution plate or showerhead, an array of radial passages through the sidewalls, or the like, may be used to distribute the gases into the chamber 110.

[0036] Application of power at an appropriate frequency and to the electrode 130 by the power supply 132 can ignite a plasma 111 in the chamber 110. In particular, a pulsed DC bias can be applied through the electrode 130 to the sputtering target 140, and the workpiece support 120 can be electrically floating. The resulting electric field in the chamber 110 ionizes the sputtering gas to form a sputtering plasma 111 that sputters the target 140, resulting in deposition of material on the workpiece 10. The plasma 111 is typically generated by applying a DC power level between 100 Watts and 20 kWatts, e.g., 1-5 kWatts. The power supply 132 can provide DC pulses at a frequency of 50 kHz to 250 KHz, e.g., 200 kHz. The duty cycle of the pulses can be 50-100%, e.g., 50-70%, or 60-100%.

[0037] In some implementations, the magnet assembly 170 is positioned outside the chamber 110, for example, above the ceiling 116. The magnet assembly 170 can help trap ions in the plasma and increase ion energy on the substrate 10.

[0038] A controller 190 , for example a programmed general-purpose computer having a processor, memory, and a non-transitory storage medium for storing a computer program, may be coupled to the various components to control the processing system 100 .

[0039] The optical light emission sensor 180 may be used to monitor plasma concentration and / or gas composition during deposition. The sensor 180 may be positioned outside the chamber 110, but adjacent a window 182 through the chamber wall, e.g., sidewall 112, to have a view of the plasma 111. If necessary, an aperture 184 may be formed in the shield 126 to provide the sensor 180 with a clear line of sight to the plasma 111. The optical light emission sensor 180 may measure nitrogen ion concentration in the plasma 111. In some implementations, the optical light emission sensor 180 may also measure inert gas ion concentration in the plasma 111. The optical light emission sensor 180 may provide these measurements to the controller 190.

[0040] The controller 190 may be configured to control the gas source 160 to adjust the flow rate of the nitrogen gas and / or the inert gas in response to the measured ion concentration. For example, the controller 190 may operate in a feedback loop to control the gas flow rate to achieve a desired nitrogen ion partial pressure or a desired nitrogen ion concentration. The controller 190 may also be configured to control the gas flow rate of the gas source 160 to maintain a stable plasma and / or achieve a desired condition on the surface of the target 140.

[0041] Niobium nitride deposition The workpiece processing tool 100 may be utilized to perform deposition of niobium nitride, particularly δ-phase NbN, on a workpiece. In one example, the workpiece 110 includes a buffer layer, such as aluminum nitride, on which the niobium nitride is deposited.

[0042] Figure 3 shows the voltage on the target as a function of nitrogen flow. A fixed pulsed DC power was applied to the target. The target potential was measured with respect to ground. This potential will vary with the sputter yield of the target and the ion concentration in the plasma. In general, the target voltage can be a proxy for the critical temperature, although there is not a linear relationship.

[0043] Generally speaking, higher quality films have higher critical temperatures. Degree As noted above, it has been discovered that the critical temperature of niobium nitride as a function of nitrogen content exhibits a hysteresis effect. With further reference to FIG. 3, when the nitrogen flow rate of successive workpieces is increased, the target voltage follows curve 202. It is believed that the surface of the niobium target transitions from a metallic mode to a "poisoned" mode when there is enough N2 in the chamber to form a thin layer of NbN on the target surface. In contrast, when the nitrogen flow rate of successive workpieces is decreased, the target voltage follows curve 204. Again, as the N2 partial pressure is decreased, the target begins to become "non-poisoned" and transitions back to the metallic mode.

[0044] For both curves 202, 204, the target voltage has a maximum immediately before dropping off sharply, which is believed to be because niobium-rich niobium nitride (NbN) films are typically formed when the target is in metallic mode, whereas good stoichiometry and the desired cubic phase are typically formed when the target is in poisoned mode.

[0045] However, as the flow rate continues to decrease (curve 204), the drop in target voltage occurs at lower nitrogen flow rates, which may indicate that the partial pressure at which the niobium target is detoxified is lower than the partial pressure at which the niobium target is poisoned.

[0046] Furthermore, when the flow rate is continuously decreased, the target voltage actually reaches a higher value (shown at 206) compared to when the flow rate is continuously increased (curve 202). Furthermore, measurements of the critical temperatures of niobium nitride deposited at these flow rates confirm that a higher critical temperature may be achieved when the nitrogen flow rate is decreased rather than increased compared to previous processes.

[0047] It is possible to take advantage of this hysteresis effect, particularly by preconditioning the chamber with nitrogen gas before depositing a layer on the workpiece, allowing the process to follow a more favorable curve of this hysteresis effect, resulting in a more reliable attainment of a high critical temperature.

[0048] 2 and 4, a process 260 for producing a metal nitride layer begins by preconditioning (step 262) the chamber 110. The chamber 110 is evacuated. A shutter disk, e.g., a metal disk of approximately the same diameter as the workpiece but thicker, can be placed on the support 120 (the workpiece on which the layer is to be deposited is not present in the chamber 110). A gas distribution assembly 160 supplies nitrogen gas to the chamber 110.

[0049] The gas distribution assembly 160 can also supply an inert gas, such as argon or helium, to the chamber 100. The inert gas can be used to dilute the nitrogen gas, thereby increasing the plasma density. 160can establish a total pressure (nitrogen gas and inert gas) of 2 to 20 mTorr. In this preconditioning step, nitrogen gas is supplied at a first flow rate, for example 15 to 40 sccm, for example 20 sccm. The nitrogen gas and inert gas can be supplied at a first ratio of nitrogen to inert gas (ratio can be the ratio of flow rates in sccm) of 4:100 to 1:4, for example 4:100 to 1:1, for example 2:1 to 1:1. Power is applied to the electrode 130 (for example as described above) to induce the plasma 111.

[0050] This conditioning process can be carried out using a shutter disk at a temperature of, for example, 200-500° C. The preconditioning process can last, for example, for 60 to 300 seconds.

[0051] After preconditioning, the chamber is again evacuated, e.g., for 10 -9 Torr is lowered, the dummy substrate is removed, and the workpiece is placed into chamber 110 and on support 120 .

[0052] Here, metal nitride may be formed on the workpiece by a physical vapor deposition process (step 264). Gas distribution assembly 160 supplies nitrogen gas to chamber 110, and power is applied to electrode 130 to induce plasma 111, for example as described above. Power source 132 may apply the same RF power, frequency, and duty cycle during deposition as in preconditioning.

[0053] In the deposition step, the nitrogen gas is supplied at a second flow rate lower than the first flow rate, while the flow rate of the inert gas remains the same as in the preconditioning step. For example, the second flow rate of the nitrogen gas can be at least 2% lower, such as at least 10% lower. For example, the second flow rate can be 2-30% lower, such as 10-30% lower. For example, the second flow rate can be 15-18 sccm.

[0054] Alternatively, the flow rate of the nitrogen gas can be held constant, while the flow rate of the inert gas can be increased.

[0055] In the deposition process, the nitrogen gas and the inert gas may be provided at a second ratio of nitrogen to inert gas (the ratio may be a ratio of flow rates in sccm) of 3:100 to 1:6, such as 3:100 to 45:52, such as 1.5:1 to 1:3. The second ratio is less than the first ratio, such as at least 2% lower, such as at least 10% lower. For example, the second ratio may be 2-30% lower, such as 10-30% lower.

[0056] The physical vapor deposition process can be performed with the workpiece at a temperature of, for example, 200-500° C. The workpiece can be treated at the same temperature as the shutter disk in the preconditioning process. The deposition process can last, for example, for 10 to 600 seconds.

[0057] Application of power to the electrode 130 at the proper frequency and duty cycle ignites a plasma in the chamber 110. The plasma causes sputtering of material from the target 130 onto the workpiece 10. The presence of nitrogen in the plasma causes a combination of nitrogen and a metal, such as niobium nitride, to be deposited on the workpiece. A preconditioning process can enable deposition of NbN with the correct stoichiometry and crystal quality throughout the deposition process.

[0058] Suitable processing conditions for physical vapor deposition to form δ-phase NbN should be within the ranges given above, although variations may occur due to differences in process chamber configuration, etc. If necessary, suitable processing conditions can be empirically determined.

[0059] The chamber 110 is then evacuated again and the workpiece is removed.

[0060] Although the above has focused on niobium nitride, these techniques can be applied to other metal nitrides, for example nitrides of mixtures of niobium and another metal, such as NbTiN.

[0061] Multilayer Devices Figure 5 is a schematic diagram of several layers in a device 220 including a metal nitride layer 226 for use as a superconducting material. The device 220 may be a superconducting nanowire single photon detector (SNSPD), a superconducting quantum interference device (SQUID), a circuit in a quantum computer, etc. Figure 6 is a flow chart of a method for fabricating the layers.

[0062] First, a buffer layer 224 may be deposited (step 250) on a substrate 222. The substrate may be, for example, a silicon wafer. Although the substrate 222 is shown as a unitary block, it may include multiple sublayers.

[0063] The buffer layer 224 may be a material that helps improve the critical temperature of the metal nitride, especially when the metal nitride layer is thin. Alternatively or additionally, the buffer layer 224 may improve adhesion between the metal nitride layer 226 and the substrate 222. The buffer layer 224 may be dielectric or conductive, but not superconductive at the operating temperature of the device 200. In some implementations, the buffer layer 224 is formed of a metal nitride different from the metal nitride used in the layer 226. For example, the buffer layer 224 may be formed of aluminum nitride (AlN), hafnium nitride (HfN), gallium nitride (GaN), or indium nitride (InN). Alternatively, the buffer layer 224 may be formed of a carbide, such as silicon carbide. The buffer layer may have a (002) c-axis crystallographic orientation. The buffer layer 224 may be deposited by standard chemical or physical vapor deposition.

[0064] Next, a metal nitride layer 226 is deposited over the buffer layer (step 260). The metal nitride layer 226 may be deposited using the two-step process 260 and system 100 described above.

[0065] After the metal nitride layer 226 is deposited, a capping layer 228 may be deposited on the metal nitride layer 226 (step 270). The capping layer 228 functions as a protective layer, for example, to prevent oxidation or other types of contamination or damage of the metal nitride layer 226. The capping layer 228 may be dielectric or conductive, but is not superconductive at the operating temperature of the device 200. In some implementations, the capping layer 228 is a nitride of a material different from the metal of the metal nitride used in the layer 226. In some implementations, the capping layer 228 is a metal different from the metal of the metal nitride used in the layer 226. Examples of materials for the capping layer 228 include carbon, silicon, titanium nitride (TiN), and silicon nitride (SiN). The buffer layer 224 may be deposited by standard chemical vapor deposition or physical vapor deposition.

[0066] An etch may be used to form trenches 230 at least through the metal nitride layer 226 to form electrical leads or other structures required for the device (step 280). Although FIG. 4 shows the trenches extending through the buffer layer 224, other configurations of the metal nitride layer 226 and the capping layer 228 are possible. For example, if the buffer layer 224 and the capping layer 228 are both dielectrics, the etch may extend only through the metal nitride layer 226. In this case, the etching step 280 may be performed before the step 270 of depositing the capping layer. As a result, the capping layer 228 may directly contact the buffer layer 224 in the areas between the metal nitride islands. For example, if the buffer layer 224 and the capping layer 228 are both dielectrics, the etch may extend only through the metal nitride layer 226. As another example, the etch may extend through the metal nitride layer 226 and the buffer layer 224 or the capping layer 228 (but not both).

[0067] Tools for multi-layer manufacturing As mentioned above, removing the workpiece from the tool used for deposition can result in contamination or oxidation, thereby lowering the critical temperature.

[0068] One technique to circumvent this problem is to use a cluster tool with multiple chambers, each capable of depositing a layer without removing the workpiece from the vacuum environment. Figure 7 is a schematic top view of a cluster tool 300 for depositing a buffer layer, a metal nitride layer, and a capping layer. The cluster tool 300 includes one or more central vacuum chambers 310 and a plurality of chambers 320 for depositing the workpiece. Hold One or more fab interface units 315 for receiving the cassettes and one or more robots 320 for transferring the work pieces from the fab interface units 315 to other processing chambers, between processing chambers, and from the processing chambers back to the fab interface units 315.

[0069] The processing chambers of the cluster tool 300 include one or more physical vapor deposition chambers 325 for deposition of a buffer layer, e.g., deposition of aluminum nitride (AIN), one or more physical vapor deposition chambers for deposition of a metal nitride layer, e.g., physical vapor deposition chamber 100 described above, and one or more physical vapor deposition chambers 330 for deposition of a capping layer, e.g., deposition of a carbon layer. The chambers may be separated by appropriate slit valves. The cluster tool 300 may be controlled by a controller 350, e.g., a general purpose programmable computer.

[0070] Another technique to avoid the need to remove the workpiece from the vacuum is to deposit each of the layers in a single chamber. Figure 8 is a schematic side view of a physical vapor deposition reactor 400 for depositing multiple layers of different compositions. For example, the physical vapor deposition reactor 400 can be used to deposit a buffer layer, a metal nitride layer, and a capping layer. Figure 9 is a top view of the physical vapor deposition reactor 400 (Figure 8 can be considered along section line 8-8 of Figure 9).

[0071] The physical vapor deposition reactor 400 is constructed in a similar manner to the physical vapor deposition reactor 100, but includes three separate targets 140a, 140b, 140c (additional targets may be present if required for other layers). The targets may be supported on the ceiling 116 of the chamber 110 of the reactor 400. Each target is supported on a separate electrode 130a-130c. The different electrodes 130a-130c may be coupled to a common power supply 132 or to different power supplies 132.

[0072] A rotatable shield 410 is positioned inside the chamber 110 and is shared by all of the electrodes 130. The shield 410 is suspended from the ceiling 116 by a shaft 420, which can be rotated about a vertical axis 426 by an actuator 422 (indicated by arrow A). In some implementations, the actuator 422 can also move the shield 410 vertically (indicated by arrow B).

[0073] The rotatable shield 410 may have holes 412 for exposing the corresponding targets. The shield 410 advantageously limits or eliminates cross-contamination between the multiple targets 140a-140c. The rotatable shield 140 may also have pockets 414 for each unsputtered target. For example, in some embodiments where three electrodes 130 are provided, the shield 410 may include holes 412 for exposing one target at a time and two pockets 414 for receiving unsputtered targets. By rotating the shield 410, different targets may be exposed and manipulated.

[0074] In some embodiments, the physical vapor deposition reactor 400 comprises: For example, when the shield 410 is in the retracted position Shielding to ceiling 116 410 The hub 420 includes a plurality of ground rings 430 for providing improved grounding of the hub 420

[0075] The three targets 140a, 140b, 140c are formed of different materials, e.g., materials to be sputtered, to form the buffer layer, the metal nitride layer, and the capping layer, respectively. For example, the first target 140a may be composed of a non-nitrogen component of the element or compound used in the buffer layer, e.g., a metal. For example, if the buffer layer is formed of aluminum nitride, the first target 140a may be aluminum. The second target 140b may be a non-nitrogen component of the compound used in the superconducting layer, e.g., a metal. For example, if the superconducting layer is formed of niobium nitride, the second target 140a may be niobium. The third target 140b may be a non-nitrogen component of the element or compound used in the capping layer, e.g., carbon, silicon, or titanium.

[0076] During operation, the actuator 422 rotates the shield 410 so that the aperture 412 is aligned with the first target 140a and the other targets are covered. The vacuum pump 150 evacuates the chamber 110, the gas source 160 supplies sputtering gas to the chamber 110, and the power source 132 applies power to the electrode 130a to generate a plasma in the chamber. The plasma can cause sputtering of the material of the first target 140a, resulting in physical vapor deposition of a buffer layer on the substrate 10. If appropriate, the gas source can provide nitrogen or another gas that forms a compound with the material of the first target 140a. For example, if aluminum nitride is to be deposited, the first target 140a can be aluminum, and the gas source can provide both an inert gas, such as argon, and nitrogen. If the material of the first target 140a is to be deposited as a substantially pure element, the gas can include only an inert element, such as argon or xenon.

[0077] Once deposition of the buffer layer is complete, the chamber 110 is evacuated and the actuator 422 rotates the shield 410 so that the opening 412 is aligned with the second target 140b and the other two targets are covered. The metal nitride layer material, such as niobium nitride, may be deposited according to methods described herein.

[0078] Once deposition of the metal nitride layer is complete, the chamber 110 is evacuated and the actuator 422 rotates the shield 410 so that the opening 412 is aligned with the third target 140c. The capping layer material may be deposited in a manner similar to that described above for the buffer layer. The chamber 110 may be evacuated again and the workpiece removed, for example by a robot.

[0079] controller The controllers, e.g., controller 190 and / or controller 150, may be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, or in a combination thereof. The controllers may include one or more processors. For example, the controllers may be distributed systems. One or more computer program products (i.e., one or more computer program products tangibly embodied in a machine-readable storage medium) may be executed by or control the operation of a controller (e.g., a programmable processor, a computer, or multiple processors or computers). Computer programs (also known as programs, software, software applications, or code) may be written in any form of programming language, including compiled or interpreted languages, and may be deployed in any form, including as a stand-alone program or as a module, component, subroutine, or other unit suitable for use in a computing environment. A computer program does not necessarily correspond to a file. A program may be stored as part of a file that holds other programs or data, in a single file dedicated to that program, or in multiple associated files (e.g., multiple files storing one or more modules, subprograms, or portions of code). A computer program may be deployed to be executed on one computer or on multiple computers at one location, or distributed across multiple locations and interconnected by a communications network.

[0080] The operations of the controller described herein may be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output. The operations of the controller may also be performed by, and a device may be implemented as, special purpose logic circuitry, such as an FPGA (field programmable gate array) or an ASIC (application specific integrated circuit).

[0081] While particular implementations have been described, other and further implementations may be devised without departing from the basic scope of the present disclosure. It is believed that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. It should be noted, however, that the drawings depict only exemplary embodiments. The scope of the invention is determined by the claims that follow.

Claims

1. 1. A cluster tool for the manufacture of devices having metal nitride layers, comprising: a load lock chamber for receiving a cassette holding the workpieces; a central vacuum chamber; a plurality of deposition chambers arranged in a cluster configuration around and coupled to the central vacuum chamber, the plurality of deposition chambers including a first deposition chamber having a first target, a second deposition chamber having a second target, and a third deposition chamber having a third target; a robot for transporting the workpiece between the central vacuum chamber, the load lock chamber, and the plurality of deposition chambers; a controller configured to: cause the robot to transfer the workpiece to the first deposition chamber which deposits a buffer layer on the workpiece; cause the robot to transfer the workpiece from the first deposition chamber to the second deposition chamber which deposits a metal nitride layer suitable for use as a superconductor at a temperature above 8 K on the buffer layer; and cause the robot to transfer the workpiece from the second deposition chamber to the third deposition chamber which deposits a capping layer on the metal nitride layer; Including, tools.

2. The tool described in claim 1, wherein the second deposition chamber includes a support for holding the workpiece within the second deposition chamber and an electrode for supporting the second target, and the tool includes a vacuum pump for evacuating the second deposition chamber, a gas supply for supplying nitrogen gas and an inert gas to the second deposition chamber, and a power supply for applying power to the electrode.

3. The controller: the gas supply is configured to flow the nitrogen gas and the inert gas at a first flow ratio into the second deposition chamber and the power supply is configured to apply sufficient power to ignite a plasma in the second deposition chamber to precondition the second deposition chamber before a workpiece on which a metal nitride layer is to be deposited is placed in the second deposition chamber; and after the workpiece is disposed in the second deposition chamber, the gas supply is configured to flow the nitrogen gas and the inert gas into the second deposition chamber at a second flow ratio and the power source is configured to apply power sufficient to ignite a plasma in the second deposition chamber to deposit the metal nitride layer on the workpiece by physical vapor deposition, the second flow ratio being less than the first flow ratio; The tool of claim 2.

4. 1. A physical vapor deposition system comprising: a chamber wall defining a chamber; a first target support for holding a first target, a second target support for holding a second target, and a third target support for holding a third target, at an upper portion of the chamber; a movable shield positioned within the chamber and having an opening therethrough; an actuator for moving the movable shield; a workpiece support for holding a workpiece in a lower portion of the chamber; a vacuum pump for evacuating the chamber; a gas supply for delivering nitrogen gas and an inert gas to the chamber; a power source for selectively applying power to the first target, the second target, or the third target; A controller, the actuator is configured to move the movable shield to position the opening adjacent to the first target, the gas supply is configured to flow a first gas into the chamber, and the power source is configured to apply power sufficient to ignite a plasma in the chamber to deposit a buffer layer of a first material on the workpiece on the workpiece support; and the actuator is configured to move the movable shield to position the opening adjacent to the second target, the gas supply to flow a second gas into the chamber, and the power supply to apply power sufficient to ignite a plasma in the chamber to deposit a device layer of a second material, the second material being a metal nitride suitable for use as a superconductor at a temperature above 8 K, on ​​the buffer layer, the device layer being of a different composition than the first material; and the actuator is configured to move the movable shield to position the opening adjacent the third target, the gas supply to flow a third gas into the chamber, and the power source to apply power sufficient to ignite a plasma in the chamber to deposit a capping layer of a third material over the device layer, the third material being of a different composition than the first and second materials. A controller; Including, the system.

5. 5. The system of claim 4, comprising the first target, the second target, and the third target, wherein the first target comprises a metal other than a metal of the second target, the first gas comprises nitrogen gas, the second target comprises niobium, the second gas comprises nitrogen gas, and the third target comprises carbon, silicon, or a metal other than a metal of the second target.

6. The controller: prior to deposition of the device layer of the second material, the gas supply is configured to flow the nitrogen gas and the inert gas into the chamber at a first flow ratio and the power supply is configured to apply sufficient power to ignite a plasma in the chamber to precondition the chamber; and the gas supply is configured to flow the nitrogen gas and the inert gas at a second flow ratio for deposition of the device layer of the second material, the second flow ratio being less than the first flow ratio; The system of claim 4.

7. 1. A method for forming a device on a workpiece, comprising: transporting the workpiece using a robot from a load lock chamber through a central vacuum chamber and into a first deposition chamber; depositing a buffer layer on the workpiece in the first deposition chamber; transporting the workpiece using the robot from the first deposition chamber through the central vacuum chamber to a second deposition chamber; depositing a metal nitride layer suitable for use as a superconductor on the buffer layer in the second deposition chamber at a temperature above 8 K; transporting the workpiece using the robot from the second deposition chamber through the central vacuum chamber to a third deposition chamber; depositing a capping layer on the metal nitride layer in the third deposition chamber; A method comprising:

8. The method of claim 7 , wherein the metal nitride layer comprises niobium nitride or a niobium alloy nitride.

9. The method of claim 7, wherein the buffer layer comprises a nitride of a metal different from the metal of the metal nitride layer.

10. The method of claim 7, wherein the capping layer comprises carbon, silicon, a metal different from the metal of the metal nitride layer, or a nitride of a material different from the metal of the metal nitride layer.

11. 8. The method of claim 7, wherein each of depositing the buffer layer, depositing the metal nitride layer, and depositing the capping layer comprises physical vapor deposition including generating a plasma to sputter a target.

12. 1. A method for forming a device on a workpiece, comprising: supporting the workpiece in a chamber having a first target, a second target, a third target, and a movable shield having an opening therethrough; evacuating the chamber; and rotating the movable shield to position the opening adjacent the first target; flowing a first gas into the chamber and applying power sufficient to ignite a plasma in the chamber to deposit a buffer layer on the workpiece; rotating the movable shield to position the opening adjacent the second target; flowing a second gas into the chamber and applying sufficient power to ignite a plasma in the chamber to deposit a metal nitride layer suitable for use as a superconductor on the buffer layer at a temperature above 8 K; rotating the movable shield to position the opening adjacent the third target; flowing a third gas into the chamber and applying power sufficient to ignite a plasma in the chamber to deposit a capping layer over the metal nitride layer; A method comprising:

13. The method of claim 12 , wherein the metal nitride layer comprises niobium nitride or a niobium alloy nitride.

14. The method of claim 12, wherein the buffer layer comprises a nitride of a metal different from the metal of the metal nitride layer.

15. The method of claim 12, wherein the capping layer comprises carbon, silicon, a metal different from the metal of the metal nitride layer, or a nitride of a material different from the metal of the metal nitride layer.

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